Deep Learning Regression of VLSI Plasma Etch Metrology
  In computer chip manufacturing, the study of etch patterns on silicon wafers,
or metrology, occurs on the nano-scale and is therefore subject to large
variation from small, yet significant, perturbations in the manufacturing
environment. An enormous amount of information can be gathered from a single
etch process, a sequence of actions taken to produce an etched wafer from a
blank piece of silicon. Each final wafer, however, is costly to take
measurements from, which limits the number of examples available to train a
predictive model. Part of the significance of this work is the success we saw
from the models despite the limited number of examples. In order to accommodate
the high dimensional process signatures, we isolated important sensor variables
and applied domain-specific summarization on the data using multiple feature
engineering techniques. We used a neural network architecture consisting of the
summarized inputs, a single hidden layer of 4032 units, and an output layer of
one unit. Two different models were learned, corresponding to the metrology
measurements in the dataset, Recess and Remaining Mask. The outputs are related
abstractly and do not form a two dimensional space, thus two separate models
were learned. Our results approach the error tolerance of the microscopic
imaging system. The model can make predictions for a class of etch recipes that
include the correct number of etch steps and plasma reactors with the
appropriate sensors, which are chambers containing an ionized gas that
determine the manufacture environment. Notably, this method is not restricted
to some maximum process length due to the summarization techniques used. This
allows the method to be adapted to new processes that satisfy the
aforementioned requirements. In order to automate semiconductor manufacturing,
models like these will be needed throughout the process to evaluate production
quality.
