Brain-like associative learning using a nanoscale non-volatile phase
  change synaptic device array
  Recent advances in neuroscience together with nanoscale electronic device
technology have resulted in huge interests in realizing brain-like computing
hardwares using emerging nanoscale memory devices as synaptic elements.
Although there has been experimental work that demonstrated the operation of
nanoscale synaptic element at the single device level, network level studies
have been limited to simulations. In this work, we demonstrate, using
experiments, array level associative learning using phase change synaptic
devices connected in a grid like configuration similar to the organization of
the biological brain. Implementing Hebbian learning with phase change memory
cells, the synaptic grid was able to store presented patterns and recall
missing patterns in an associative brain-like fashion. We found that the system
is robust to device variations, and large variations in cell resistance states
can be accommodated by increasing the number of training epochs. We illustrated
the tradeoff between variation tolerance of the network and the overall energy
consumption, and found that energy consumption is decreased significantly for
lower variation tolerance.
