Robust Binary Neural Network Operation from 233 K to 398 K via Gate
  Stack and Bias Optimization of Ferroelectric FinFET Synapses
  A synergistic approach for optimizing devices, circuits, and neural network
architectures was used to abate junction-temperature-change-induced performance
degradation of a Fe-FinFET-based artificial neural network. We demonstrated
that the digital nature of the binarized neural network, with the "0" state
programmed deep in the subthreshold and the "1" state in strong inversion, is
crucial for robust DNN inference. The performance of a purely software-based
binary neural network (BNN), with 96.1% accuracy for Modified National
Institute of Standards and Technology (MNIST) handwritten digit recognition,
was used as a baseline. The Fe-FinFET-based BNN (including device-to-device
variation at 300 K) achieved 95.7% inference accuracy on the MNIST dataset.
Although substantial inference accuracy degradation with temperature change was
observed in a nonbinary neural network, the BNN with optimized Fe-FinFETs as
synaptic devices had excellent resistance to temperature change effects and
maintained a minimum inference accuracy of 95.2% within a temperature range of
-233K to 398K after gate stack and bias optimization. However, reprogramming to
adjust device conductance was necessary for temperatures higher than 398K.
