DNN-aided Read-voltage Threshold Optimization for MLC Flash Memory with
  Finite Block Length
  The error correcting performance of multi-level-cell (MLC) NAND flash memory
is closely related to the block length of error correcting codes (ECCs) and
log-likelihood-ratios (LLRs) of the read-voltage thresholds. Driven by this
issue, this paper optimizes the read-voltage thresholds for MLC flash memory to
improve the decoding performance of ECCs with finite block length. First,
through the analysis of channel coding rate (CCR) and decoding error
probability under finite block length, we formulate the optimization problem of
read-voltage thresholds to minimize the maximum decoding error probability.
Second, we develop a cross iterative search (CIS) algorithm to optimize
read-voltage thresholds under the perfect knowledge of flash memory channel.
However, it is challenging to analytically characterize the voltage
distribution under the effect of data retention noise (DRN), since the data
retention time (DRT) is hard to be recorded for flash memory in reality. To
address this problem, we develop a deep neural network (DNN) aided optimization
strategy to optimize the read-voltage thresholds, where a multi-layer
perception (MLP) network is employed to learn the relationship between voltage
distribution and read-voltage thresholds. Simulation results show that,
compared with the existing schemes, the proposed DNN-aided read-voltage
threshold optimization strategy with a well-designed LDPC code can not only
improve the program-and-erase (PE) endurance but also reduce the read latency.
