Model of the Weak Reset Process in HfOx Resistive Memory for Deep
  Learning Frameworks
  The implementation of current deep learning training algorithms is
power-hungry, owing to data transfer between memory and logic units.
Oxide-based RRAMs are outstanding candidates to implement in-memory computing,
which is less power-intensive. Their weak RESET regime, is particularly
attractive for learning, as it allows tuning the resistance of the devices with
remarkable endurance. However, the resistive change behavior in this regime
suffers many fluctuations and is particularly challenging to model, especially
in a way compatible with tools used for simulating deep learning. In this work,
we present a model of the weak RESET process in hafnium oxide RRAM and
integrate this model within the PyTorch deep learning framework. Validated on
experiments on a hybrid CMOS/RRAM technology, our model reproduces both the
noisy progressive behavior and the device-to-device (D2D) variability. We use
this tool to train Binarized Neural Networks for the MNIST handwritten digit
recognition task and the CIFAR-10 object classification task. We simulate our
model with and without various aspects of device imperfections to understand
their impact on the training process and identify that the D2D variability is
the most detrimental aspect. The framework can be used in the same manner for
other types of memories to identify the device imperfections that cause the
most degradation, which can, in turn, be used to optimize the devices to reduce
the impact of these imperfections.
