Always-On 674uW @ 4GOP/s Error Resilient Binary Neural Networks with
  Aggressive SRAM Voltage Scaling on a 22nm IoT End-Node
  Binary Neural Networks (BNNs) have been shown to be robust to random
bit-level noise, making aggressive voltage scaling attractive as a power-saving
technique for both logic and SRAMs. In this work, we introduce the first fully
programmable IoT end-node system-on-chip (SoC) capable of executing
software-defined, hardware-accelerated BNNs at ultra-low voltage. Our SoC
exploits a hybrid memory scheme where error-vulnerable SRAMs are complemented
by reliable standard-cell memories to safely store critical data under
aggressive voltage scaling. On a prototype in 22nm FDX technology, we
demonstrate that both the logic and SRAM voltage can be dropped to 0.5Vwithout
any accuracy penalty on a BNN trained for the CIFAR-10 dataset, improving
energy efficiency by 2.2X w.r.t. nominal conditions. Furthermore, we show that
the supply voltage can be dropped to 0.42V (50% of nominal) while keeping more
than99% of the nominal accuracy (with a bit error rate ~1/1000). In this
operating point, our prototype performs 4Gop/s (15.4Inference/s on the CIFAR-10
dataset) by computing up to 13binary ops per pJ, achieving 22.8 Inference/s/mW
while keeping within a peak power envelope of 674uW - low enough to enable
always-on operation in ultra-low power smart cameras, long-lifetime
environmental sensors, and insect-sized pico-drones.
