name: SOI
full_form: Silicon On Insulator
context: SOI CMOS is currently the work horse for the switch and LNA RFFE functions in FR1 for both cellular and Wi-Fi systems. Especially since it associates good noise figure/Gain and good switch losses/isolation on the same die for the main antenna Tx/Rx modules and also for the diversity and MIMO antennas Rx modules. It should be noted that SOI CMOS is also used for PA / SWT / LNA / phase shifter functions in FR2 with superior performance compared to bulk CMOS. So the coverage of the LNA and switch functions in the 7.125 â 24.25 GHz range is only a matter of picking the right node. In order to illustrate the options that can be picked from, table 6.3.1.3.1-1 recapitulates the key figures of merit for LNA and switches versus nodes in SOI CMOS: - Fmax in GHz provides a measure of the achievable power gain which is essential in LNA and PA designs. A ratio of 5 (and preferably > 10) between Fmax and the frequency of operation is desirable. - RON * Coff in fs is key for switch performance as RON
description: Silicon On Insulator (SOI) CMOS technology is a semiconductor manufacturing process used in telecommunications, particularly for Radio Frequency Front-End (RFFE) components like switches and Low Noise Amplifiers (LNAs). It enables the integration of multiple functions on a single die, offering advantages such as good noise figure/gain and switch losses/isolation. SOI CMOS operates across various frequency ranges, including FR1 and FR2, and often outperforms bulk CMOS in specific applications.
explanation: The text describes SOI CMOS technology as a manufacturing process used in telecommunications for RFFE components. Its characteristics and applications directly relate to technological advancements within the field.
section_title: 6.3.1.3.1Active technologies
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