name: HBT
full_form: Heterojunction Bipolar Transistor
context: has a better output power capability than CMOS due to higher voltage (>9 V) handling for Pas (>24 dBm) while the bulk CMOS device provides reasonable switches. LNAs can be implemented in either HBT or CMOS depending on the linearity and NF trade-off. LNA implemented in HBT has demonstrated NF similar to RF SOI technology. This technology has also been widely used as a cellular RFFE technology in FR1 and FR2. In FR2 it has capability to monolithically integrate TDD PA / switch / LNA / phase shifter / VGA in HBT with âlightâ digital functions like control interface, memory, DFX, etc. in CMOS. Similar to SOI CMOS, table 6.3.1.3.1-2 illustrates the key figure of merit for BiCMOS technologies for different nodes: - Fmax * BVCEO provides a measure of power capability and gain for PA designs. It is a combination of the two first parameters of the SOI CMOS table. - RON * Coff in fs is key for switch performance as RON dictates the losses in ON state and Coff the isolation in off state, the
description: Heterojunction Bipolar Transistor (HBT) is a semiconductor technology used in radio-frequency (RF) applications, including power amplifiers (PAs), low-noise amplifiers (LNAs), and switches. It offers advantages such as higher voltage handling and better output power capability compared to CMOS technology.
explanation: The context describes HBT as a semiconductor technology specifically designed for RF applications, highlighting its role in various components like PAs and LNAs. This technological nature and application within telecommunications firmly place it under the Technology category.
section_title: 6.3.1.3.1Active technologies
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