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Learn Short Vowel Words
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Practice recognizing those short vowel words and sounds with this balloon-filled worksheet. Kids help John collect balloons by picking out the ones that feature words with short vowel sounds. Learning to recognize different vowel sounds boosts reading readiness, and helps kids get comfortable with learning new words.

subset: commoncrawl


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Use this unofficial fan app to get the latest news rumors and gossip from tons of news sources about Robert Downey Jr. The best actor ever! Over 15 different online news sources all in one so you can be sure to be in the loop using this awesome news aggregator app!
Robert John Downey, Jr. (born April 4, 1965) is an American actor who made his screen debut at the age of five, appearing in his father Robert Downey, Sr.'s film Pound. He has appeared in roles associated with the Brat Pack, such as Less Than Zero and Weird Science. Other films he has starred in include Air America, Soapdish, and Natural Born Killers. He starred as Charlie Chaplin, the title character in the 1992 film Chaplin, earning him a nomination for the Academy Award for Best Actor.
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Originally posted on FOX Sports | Last updated 10/10/12
Josh Hamilton's bat sat on his shoulder for the first strike. He fouled the second one off. He swung at the third delivery but missed, and in doing so unleashed pent-up boos from the Texas Rangers fans who once adored him. And so ended what had been a great baseball love story. This strikeout in the wild-card loss to Baltimore was his last at-bat as a Ranger. My man, Randy Galloway, reports in the Fort Worth Star-Telegram that Texas does not want him back "even if he plays here for free." This was a few days ago, and now we have teams like the Red Sox, Dodgers and Cubs watching the playoffs from home, reeking of envy and drunkenly making their offseason wish lists. This is why, despite all the warning signs, one of them is going to throw stupid cash and years at Hamilton, ignoring that he falls under one of the best breakup lines of all time: "Somewhere, somebody is sick of her stuff, too." Nobody will want to admit this, but Hamilton had quickly become the T.O. of the Rangers, a talented player whose production no longer justifies the headache. The Rangers have decided he is no longer worth it, which is why on Tuesday in their post-mortem wrapup, they said Hamilton will be allowed to "test the market," the same phrasing used about now-Angels pitcher CJ Wilson. That is code for we have no intention of Hamilton being a Ranger going forward . How did it come to this? How did a guy the Rangers once thought they would grow old with suddenly find his stuff in a box on the porch? To figure out how, we have to remember how it started. When Hamilton arrived in Texas via trade in 2007, he already had been baseball's No. 1 pick, battled drug and alcohol addiction, been a menace to both his baseball and nuclear families, had what he called a showdown with the devil, a Biblical conversion while praying with his grandmother and a second chance. It goes without saying that Texas was the perfect place for him and his tale of redemption. There is nothing we love more down here than the white, Judeo-Christian athlete who has fallen on hard times and selling a tale of redemption. It also did not hurt that he could hit the snot out of the baseball and helped lead the Rangers to their first and second World Series berths. It was the perfect love story. Somewhere along the way, though, Hamilton became one of those it's-always-something guys, again and again testing the patience of his loyal flock. There were the Deadspin photos from Surprise, Ariz., from before spring training, showing him very inebriated and enjoying whip cream served on the chest of recent female acquaintances; the shoulder injury he sustained during a home plate collision last season and his subsequent blame of the third base coach for sending him; his "blue-eyed" explanation for day-game hitting woes; another relapse this offseason in Dallas (with alcohol) in which he inexplicably and unfairly dragged teammate Ian Kinsler into his mess; his statement that once he became a free agent, he would take the biggest pile of cash, eschewing any loyalty to a franchise that had given him this second chance and an accountability partner in coach Johnny Narron; his deal to make his life into a Hollywood movie and his in-season flight to LA for appear on Jimmy Kimmel's show; his fuzzy talk of his lack of obedience during a prolonged slump and then his astonishment that many people thought he had relapsed, and his begging out of games because of blurry vision caused by too much caffeine.* * If "caffeine eye" were a real affliction, America would be blind. This is not a bad guy but rather a personality for whom heightened expectations are not a good fit. And he has heaped added expectations upon himself -- to be this amazing baseball player and this perfect example of Christ's redeeming power. He bought into this idea that he had conquered his demons when really demon slaying is an exhausting, lifelong battle. You have to wonder if he enjoys it still, if he really believes leaving the Rangers and a fresh start is what will cure what ails him. But a bigger deal in a new town is only going to bring more expectations and a higher platform from which he could fall. In the beginning, it will be like it was here. He will tell his story of being lost and then found, of God's grace, of being saved, and people will love him for it. They will wonder how the Rangers could have let a guy like this go, how they could have been so stupid. What they will learn is grace is messy, and with Hamilton there is always something.
PLAYERS: Josh Hamilton, CJ Wilson, Ian Kinsler, Jimmy Kimmel
TEAMS: Texas Rangers, Boston Red Sox, Los Angeles Angels
TEAMS: Texas Rangers, Boston Red Sox, Los Angeles Angels
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Texaco celebrates 100 years in Dominican market
Fuel distribution company Texaco is celebrating its 100th anniversary in the Dominican market. With 140 stations nationwide, the first Texaco gas station opened in March 1916.*
The company markets the difference in yield the additives Techron and Techron D make in the diesel and unleaded premium and regular gasoline it sells.
In the Dominican Republic, Texaco is managed by GB Energy, which purchased Texaco operations in the DR, Jamaica and St. Maarten in 2012 and operates 200 gas stations all together. *The GB Group first entered the energy industry in Haiti in 2003 prior to entering the market in other Caribbean countries.
In an interview with the Grupo Corripio news media on Thursday 20 October 2016, executives Pablo Portes, regional CEO; Bruno Vincent, CEO in the Dominican Republic, and social corporate responsibility director Walkiria Caamaño and spoke of the company's vision for the future.
In the Dominican Republic, Texaco handles 4.2 million of the 32 million barrels of fuel, with its competitor Total with around 4.0 million. They said that over the years, there has been a decline in sales of regular unleaded gasoline and an increased in propane gas sales. The company also services hotels, restaurants, laundries whose equipment runs on propane gas, in addition to vehicles.
Source: DR1, Eldia
Oct 21, 2016
Category: DR News |


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DANAVA 7″ Vinyl
"Danava are putting heavy riffs back where they belong: in outer fucking space! No band since Deep Purple has sounded so space truckingly awesome." – THRASHER
Portland fretboard rippers DANAVA return with the bloodthirsty new single, "At Midnight You Die"! Like Di'Anno-era Iron Maiden played at 45 RPM, the dangerous track gushes with the highly synchronized guitar wizardry that is the iron backbone of the group's cultish hard rock. Laser-sharp, snake-like and focused AF, "At Midnight You Die" is more than a harbinger of the band's impending new music, it's your musical death knell! The killer cut is backed with the twisted track, "My Spirit Runs Free", taken from the underground 1979 horror film 'The Capture of Bigfoot'. Buy or die!


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Fans may be waiting for this day when these two teams will play with each other. where India and Newzealand have been practising for long weeks now.
- India open campaign against Kiwis, hope to sound out warning to title contenders
- New Zealand players will wear black armbands for Marin Crowe
- India have lost four out of their five previous encounters vs NZ
India comes into the tournament riding a wave of T20I success — quite the contrast to the gloom surrounding the side after the whitewash in the hands of South Africa in October last year. New
Veteran cricket journalist Ayaz Memon, or Cricketwallah as he is known in the cricketing community, in conversation with Firstpost's Vinayakk Mohanrangan, preview the match between India and New Zealand in Nagpur.
"In my opinion, these are the two teams who must progress from this group, so whoever wins on Tuesday gets a head-start. It is not going to be easy for either team, but I expect a humdinger," Ayaz told Firstpost.
Talking about the explosive New Zealand batting lineup, Ayaz reserved special praise for Martin Guptill and Kane Williamson — 'a class act in any format '– the stars of the Kiwi batting lineup. He also spoke about the ability of Corey Anderson to change a game from the middle order.
'New Zealand's only weakness seems to be their spin bowling department. Mitchell Santner is good, but he has not established himself yet. They have a lethal fast bowling attack with Trent Boult, Tim Southee but spin is an area of concern," said Ayaz.
As for India, the only doubtful area in the starting XI seems to be between the returning Mohammad Shami and the man enjoying a swansong, Ashish Nehra.
'Given that India will be desperate to win the first match, they will want to go with a settled XI. It is up to Shami to force Dhoni's hands into picking him as he is the one making a comeback," said Ayaz.
While spin is New Zealand's weakness, it is undoubtedly India's strength. 'Not taking anything away from the faster bowlers, R Ashwin, and Ravindra Jadeja will need to be stellar bowlers for India,' Ayaz said.
The first match of the tournament-proper looks like a cracker by all accounts. When the two captains not known to flinch under pressure take the field on Tuesday for the toss, expect a massive roar from the Nagpur crowd that will dissolve all the uncertainties that have mired the build-up to this tournament.
Nagpur: The superb build-up run has made India the clear favourites for an unprecedented second World T20 title but the in-form hosts will have to guard against complacency when they take on a spirited New Zealand in their campaign-opener in Nagpur on Tuesday.
No host country has won the World T20 world title in the last five editions and none has repeated a title triumph, but India's settled combination, led by Mahendra Singh Dhoni, and familiarity with the conditions make them the odds-on favourites to script history.
The 2007 Champions, India go into the Super 10 Group 2 clash against New Zealand with their tails up as the number one ranked team in the world.
India has been on a roll in the shortest form of the game, winning their last seven outings which included a 3-0 whitewash of World 50-over champions Australia in the latter's backyard.
They then went on to win the Asia Cup on a canter after beating Sri Lanka at home 2-1.
The five consecutive wins in Dhaka, including in the summit clash against Bangladesh that led to their
continental supremacy in the T20 game, has given the team a huge morale boost.
However, Dhoni's men will be wary of the fact that they have never beaten New Zealand in T20s in four outings in the past including once during their stunning title run in the inaugural edition in 2007 in South Africa.
But in home conditions, India would be a big threat to the rest of the competitors, including New Zealand.
The minor hiccup in India's build-up to this competition was their loss to South Africa by four runs in a practice match and this was perhaps a wake-up call for the team to avoid being complacent.
India do have the wherewithal and the personnel to script history and a win in tomorrow's opening game at the VCA Stadium in Jamtha would give them the ideal momentum to take on the challenges ahead head-on.
Virat Kohli has been in terrific form, in the last two months. On top of his game, the Test skipper has made four half-centuries in seven innings, and two other scores in the 40s, besides leading four successful run-chases.
With an average of over 50 after 38 matches, he remains one of the players who will be feared by the opposition along with the equally talented Rohit Sharma who is set to play in his sixth WT20 championship.
Shikhar Dhawan's form has been patchy at best but the knock of 73 he made in the warm-up game against South Africa should have given him as well as the team a considerable boost going into the tournament.
With the likes of Suresh Raina, Yuvraj Singh and Dhoni himself to follow apart from Hardik Pandya and Ravindra Jadeja, India can bat deep down the order.
The unearthing of Jasprit Bumrah to bowl effectively at the early stages as well as in the death has given the team the much-needed go-to-man when things don't go as per plans.
With the vastly experienced Ashish Nehra, who has played in just one WT20 event earlier, and the timely return to fitness of Mohammed Shami, India has the pacers to do the job effectively. To add variety to medium-pace, there's Pandya.
It's in the spin department that they have an embarrassment of riches, barring a leg spinner.
The duo of Ravichandran Ashwin and Ravindra Jadeja should be the front-runners to take up two spots and the team has the choice of adding either Harbhajan Singh or Pawan Negi to the combination.
New Zealand too has the players to trouble India although they would be missing the fire-power and attacking captaincy of Brendon McCullum who has retired recently.
Led by Kane Williamson, a classically elegant batsman who ups his gears when opening in T20Is, the Kiwis are well-served with a set of explosive batsmen in Martin Guptill, Colin Munro, Grant Elliott, Ross Taylor and Corey Anderson.
They have a very good pace battery, including left-right combinations, and a varied spin attack to fall upon in the middle overs, for containment as well as taking wickets.
The Kiwis had also won four out of their last five T20 Internationals — against Pakistan and Sri Lanka — but showed little hints of vulnerability to spin by England who checked in their stunning progress in the warm-up game in Mumbai.
A packed house, which will be a huge plus for India is expected to be treated to some thrilling on-field action at the Jamtha stadium.
India: Mahendra Singh Dhoni (C), Shikhar Dhawan, Rohit Sharma, Virat Kohli, Suresh Raina, Yuvraj Singh, Hardik Pandya, Ravindra Jadeja, R Ashwin, Jasprit Bumrah, Ashish Nehra, Harbhajan Singh, Pawan Negi, Ajinkya Rahane, Mohammed Shami.
New Zealand: Kane Williamson (C), Martin Guptill, Henry Nicholls, Luke Ronchi, Ross Taylor, Colin Munro, Mitchell Santer, Nathan McCullum, Grant Elliott, Mitchell McClenaghan, Tim Southee, Trent Boult, Adam Milne, Ish Sodhi, Corey Anderson.
The match begins at 07:30 pm.
Source: Firstpost


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AppDictions App Review
Memories can be forgotten, but pictures last forever. Recording these moments so you can revisit them later is priceless, and Shot Memo is the perfect application to help you do just that.
GKProject gives us Shot Memo – and this one is definitely a must-buy. If you're looking for a tool that can help you with your productivity, Shot Memo is a handy camera and notepad that's easy to use. For those who are sentimental by nature, this allows you to preserve those Hallmark moments and even pen short captions so you can remember the exact details of the photograph.
With a simple interface and straight-forward manoeuvring within the app, Shot Memo is a practical replacement for a bulky camera and a troublesome pen and paper set. Functions are smooth, quick and hitch-free. Although the quality is limited by the device used, the iPhone is already miles ahead of its competitors so quality does not at all suffer – especially if the products are only going to be for personal use.
Shot Memo is impressive in the way it effortlessly combines functionality and creativity. If you're in need of a little creative outlet, taking pictures may just be the activity for you. The application also provides the users the chance to customize as they please. You can adjust the size and location of the images, the size of the pad and the size and color of the font. It's very aesthetically pleasing, and GKProject makes the app even more appealing by offering 39 different designs of note pads to use. These endless options also make Shot Memo more user-friendly.
And of course, how fun would taking pictures be if you can't share them with family and friends? From the Shot Memo app, you can instantly upload your photos to different social networking sites – Facebook, Twitter, Tumblr and Evernote. If the prospect of a good photo-and-memo application excites you, let me tell you, this is the one to get.
iTunes Description
Picture yourself in the following situations:
– You need to take notes, but forgot to bring a pen.
– You're just too tired to take notes.
– There's too much to write down.
– You want to add a short comment to a picture.
Your one-stop solution is Shot MeMo. This newly released picture and memo sharing application has all the essential functions you need.
And it couldn't be simpler: take a picture, write a note, and post it on your favorite SNS.
What you get
– Simple, user-friendly controls
– Automatic recording when app is in use (toggle on/off in setup)
– Automatic indication of date and location (toggle on/off in setup)
– Adjust location and size of pictures
– Adjust the size of the memo pad
– Select the size, color of font
– Share notes across 4 major SNS platforms
– Easy to share notes on Twitter, Facebook, Tumblr, and Evernote
– Log in just once during setup and you won't need to again. Pictures and memos are sent instantly.
– 39 different kinds of memo pads (in-app purchase)
– Getting bored with just one kind of note pad? With over 39 different styles to choose from, you can pick the note pad that matches how you feel.
How it works
– Camera
After taking pictures and writing notes, you can save them or share them through SNS by pressing one button.
– Album
Browse through your pictures or sort pictures in an album and add notes about them.
– Setup
Shot MeMo shows you just how easy setup can be. Configure everything just the way you want it with simple ON/OFF toggling.
How you can use it
– Jotting down notes when you're in a hurry
Tired of carrying around a note pad and pen all the time? Now you don't have to! With Shot MeMo, you can take a picture and write a note quickly and easily.
– Recording your feelings when you get a present
The excitement you feel may fade, but with pictures and notes, it will last forever. And what about a bouquet of flowers? They won't stay fresh for long if you don't have Shot MeMo.
– Capturing the highlights of your trip
You had to wait forever to get into that amazing restaurant, but it was so totally worth it. Show your friends on Facebook exactly what they're missing out on. Take a photo and add a note, and Shot MeMo automatically displays the location.
Compatible with iPhone, iPod touch, and iPad.Requires iOS 4.0 or later.


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|Publication number
|Publication type
|Application number
|Publication date
|Mar 29, 1988
|Filing date
|Sep 25, 1986
|Priority date
|Sep 25, 1985
|Fee status
|Publication number
|Tadahiro Ohmi, Hiromi Kumagai, Yoshiaki Yanagi
|Original Assignee
|Tokyo Electron Limited
|Export Citation
|BiBTeX, EndNote, RefMan
|Patent Citations (3), Referenced by (28), Classifications (9), Legal Events (4)
|External Links: USPTO, USPTO Assignment, Espacenet
This invention relates to a wafer feeding apparatus used in a semiconductor manufacturing apparatus for such as an LSI (large scale integrated circuit).
In a conventional CVD apparatus, sputtering apparatus, etc., a wafer is fed from a preparatory chamber to a processing chamber through a belt conveying mechanism, a vacuum suction mechanism, etc. These apparatuses include many movable components.
Such a wafer feeding mechanism includes a greater number of mechanical movable component parts. In the vacuum suction apparatus in particular, an air stream influences the generation of particles in view of the negative pressure of a suction mechanism. An increasing amount of particles is unavoidably generated, thus presenting the difficulty of restricting this amount to below a predetermined level.
In an evaporation, CVD, plasma etching, reactive ion etching apparatus for instance, a vacuum chuck cannot be employed for processing under low pressure. As a wafer holding mechanism attached to the wafer feeding mechanism, use is often made of a mechanical means, such as a wafer holder and holding arm, thus involving a greater number of movable component parts.
It is therefore difficult to implement a low-temperature process as well as a high selective process.
It is accordingly the object of this invention to provide a wafer feeding apparatus which can overcome the problems encountered in the prior art, can hardly generate particles on a wafer feeding mechanism and can be used under ordinary pressure or reduced pressure in particular and under a low temperature environment in the manufacturing process of a semiconductor device.
FIG. 1 is a cross-sectional view schematically showing a machine as applied to a wafer feeding apparatus with attention focused on a preparatory chamber;
FIGS. 2A and 2B are cross-sectional views showing an electrostatic chuck section in different states;
FIG. 3A is a cross-sectional view as taken along line I--I in FIG. 3B and FIG. 3B is a plan view showing an electrostatic chuck section;
FIG. 4A is a cross-sectional view showing a wafer attracted to the electrostatic chuck section;
FIG. 4B shows an equivalent circuit of the electrostatic chuck section;
FIGS. 5A and 5B show the configuration of one form of chuck electrodes and FIG. 5C is an expanded view showing a wafer attraction section of the chuck electrode of FIG. 5B;
FIGS. 6A, 6B, 6C and 6D show the configuration of another form of chuck electrodes;
FIG. 7 is a view showing a wafer vertically attracted to a vertical susceptor in an embodiment of this invention;
FIG. 8 shows an equivalent circuit of FIG. 7;
FIGS. 9A and 9B are a plan view and side view showing a wafer feeding apparatus with attention focused on its preparatory chamber; and
FIGS. 10A and 10B show another variant of electrostatic chuck mechanism of a wafer feeding apparatus of this invention.
A wafer feeding apparatus according to one embodiment of this invention will be explained below with reference to FIGS. 1 to 4.
Arm section 5 is provided in preparatory chamber 4 of wafer feeding apparatus 1 as shown in FIG. 1 with the preparatory chamber connected to reaction chamber 2 through gate 3. This section includes tubular arm 5aand air cylinder 5b, and electrostatic chuck section 6 is fixed to the forward end of tubular arm 5a. Preparatory chamber 4 has window 41 of a light-transmissive material on the upper side and vacuum vent 42 on the bottom side. Within preparatory chamber 4, susceptor 7 is disposed to support semiconductor wafer 8 as a sample. Susceptor 7 is placed on support base 9 which is fixed to the bottom of preparatory chamber 4.
Within air cylinder 5b, inner cylinder 5c is disposed in a concentric fashion. Arm 5a is disposed within inner cylinder 5c and annular permanent magnet 5d is disposed such that it can be slidably moved along the outer peripheral surface of the inner cylinder and inner wall surface of air cylinder 5b. The permanent magnet separates the interior of cylinder 5b into first and second chambers 52 and 53. Permanent magnet 5e is attached to arm 5a at a location opposite to permanent magnet 5e. When permanent magnet 5d is moved, permanent magnet 5e is also moved, in the same direction, under an attractive force of permanent magnets. At one end portion of air cylinder 5b, first port 52a is provided which permits first cylinder chamber 52 to communicate with a pressure source, not shown. At the other end portion of air cylinder 5b, second port 53a is provided to permit second cylinder chamber 53 to communicate with a pressure source, not shown. When arm 5a is moved toward reaction chamber 2, high pressure air is introduced into first chamber 52 through first port 52a and vented through second port 53a. On the other hand, when arm 5a is moved away from reaction chamber 2, high pressure air is introduced into second cylinder chamber 53 through second port 53a and vented from first port 52a.
The electrostatic chuck mechanism will be explained below with reference to FIGS. 2A and 2B.
In FIG. 2A, reference numeral 70 shows a housing opened at a lower end. Bearing plate 61 is fixed in the housing to separate into upper and lower zones. Housing 70 is connected at the lower portion to arm 5a so that the housing communicates with a passage of arm 5a. An axial through hole is provided at the center of bearing plate 61 such that it extends in a vertical direction. Shaft 66 is freely inserted into the axial through hole and movable in the vertical direction. Back plate 65 and movable base 62 are fixed to the upper and lower end portions, respectively, of shaft 66 such that the back plate is located opposite to the movable base with a predetermined distance left therebetween. A pair of coil springs 64, 64 are provided between bearing plate 61 and back plate 65 to bear the load of the back plate. A pair of coil springs 63 are stretched between bearing plate 61 and movable base 62. Between the outer peripheral edges of axial bearing 61 and back plate 65, bellows 69 are mounted to provide upper chamber 68. Between the outer peripheral edges of axial bearing 61 and movable base 62, bellows 69 are mounted to provide lower chamber 71. Channel 61a is formed in bearing plate 61 to permit upper chamber 68 to communicate with the lower annular spacing of the housing. Upper chamber 68 communicates with the passage of arm 5a through channel 61a and then through the lower annular spacing of the housing. Lower chamber 71 is independently separated from the other chamber and spacing. To the lower surface of movable base 62, electrostatic chuck 10 is fixed with a wafer attraction section down, i.e., with the wafer attraction section located opposite to susceptor 7.
The operation of the electrostatic chuck mechanism will be explained below.
Where a semiconductor wafer is placed on susceptor 7 or attracted away from susceptor 7, movable base 62 or electrostatic chuck 10 is moved down as shown in FIG. 2A. Where, on the other hand, a wafer attracted to electrostatic chuck 10 is moved in a horizontal direction, that is, moved into the preparatory chamber or retracted back, movable base 62 is brought to its upper position. The movable base is moved up and down by supplying (in the state in FIG. 2B) or venting (in the state in FIG. 2A) compressed air through the passage of arm 5a and channel 61a of bearing plate 61.
As shown in FIGS. 3A and 3B, electrode unit 17 of electrostatic chuck 10 is comprised of first and second electrodes 11 and 12 made of semicircular conductors, such as a metal, in which case it defines a pair of semicircular recesses 11a, 12a at their inner lower surfaces.
The pair of first and second electrodes 11, 12 are wholly covered with a thin insulating film (13, 14) with a predetermined distance D left as viewed from their straight opposite faces. In this connection it is to be noted that a spacing defined by that predetermined distance may or may not be filled with an insulating material. This choice may be determined from the whole structure of electrostatic chuck 10.
As shown in FIG. 3A, a circular unit comprising first and second electrodes 11 and 12 is inwardly recessed with semicircular portions of a width W left at their outer marginal portions, noting that the aforementioned semicircular portions of the first and second electrodes provide wafer attraction sections 15 and 16. Insulating films 15a and 16a are coated as the portions of insulating films 13 and 14, respectively, and their thicknesses are determined by, for example, a wafer attraction force. The thickness of the remaining portions of insulating films 13 and 14 is determined, taking into consideration the fact that their electrodes have an adequate withstand voltage if being brought into contact with the other electrode.
The attraction of the semiconductor wafer by electrostatic chuck electrode section 17 will be explained below.
As seen from FIG. 4A, semiconductor wafer 8 is attracted to wafer attraction sections 15 and 16 located at the outer marginal portions of electrode unit 17. Where wafer 8 is automatically conveyed, it is held by the attraction force of electrostatic chuck 10 with the surface of the wafer up. In this state, the wafer is fed from preparatory chamber 4, i.e., a starting point to reaction chamber 2, i.e. a destination point. In this respect the electrostatic chuck is different from a mere vacuum chuck whereby a wafer is usually fixed in a manner to be sucked from its reverse side. Reference numeral 18 is a voltage source (voltage level V) of the electrostatic chuck.
Usually devices, such as integrated circuits and large-scale integrated circuits, are not formed at the outer marginal portion of disc-like wafer 8, i.e., several millimeters inside the outer marginal portion of disc-like wafer 8. It is therefore possible to attract that outer marginal portion of wafer 8 by electrode unit 17 without deteriorating the characteristics of ICs or LSIs. FIG. 4A shows the case where the outer diameter of electrostatic chuck 10 substantially corresponds to that of wafer 8.
In order to drop wafer 8 under its own weight the width W as set forth above may usually be set to about 0.1 to 3 mm, preferably about 0.2 to 1 mm. The wafer is less contaminated or damaged with the width W set as a narrower width. Needless to say, an adequate consideration must be paid to a contact pressure with which electrode unit 17 is brought into contact with wafer 8. It is also necessary to set the contact pressure to a level at which a fault, such as dislocation, never occurs in the wafer.
The diameter (2R) of electrode unit 17 may be set to be somewhat greater or smaller than that of wafer 8. In order to exactly locate electrode unit 17 over wafer 8 and thus positively attract the wafer to the electrostatic chuck, however, the diameter of wafer 8 may be set to be substantially equal to, or somewhat greater than, the diameter (2R) of electrode unit 17.
Various kinds of wafers are used in the manufacture of semiconductor devices. As a wafer use is made of a material, such as Si, Ge, GaAs, InP. The resistivity, ρ, of the wafer varies within a range of about 108 to 10-3 Ω�cm, depending upon the material of the wafer. This is because there are cases where an insulating film, such as an oxide, is formed on the wafer surface on the order of 1 μm or a resist film is formed on the insulating film.
The dielectric relaxation time, τd, of the wafer is given by:
τd=ρε (1)
Suppose that, here, ρε=1�108 to 1�10-3 Ω�cm. In this case the dielectric relaxation time, τd, given by Equation (1) becomes about 1�10-4 to 1�10-15 sec. That is, the wafer material may be treated as a conductor in terms of DC, if the resistivity is set to be within this range.
If, as shown in FIG. 4A, the state in which wafer 8 is attracted to electrodes 11 and 12 of electrode unit 17 is expressed in terms of an electrical circuit, a circuit as shown in FIG. 4B is obtained in which capacitors 19 and 20 corresponding to the wafer attraction sections 15 and 16 are connected in series with voltage supply terminal 18. The capacitance C of the capacitor is given by ##EQU1## where δ and S denote the thickness of the insulating film of the wafer attraction section and area of the wafer attraction section; and
εi denotes the dielectric constant of the insulating film.
The capacitance of the capacitor C varies, depending upon the thickness of the insulating film on the wafer, thickness of the resist, resistivity of the wafer, etc.
From the radius (R) in FIG. 3B, the area of the wafer attraction section is substantially given by:
S≈πRW (3),
R>>W and R>>D
The relation of R and D is not necessarily restricted to the aforementioned relation. A force F acting upon the capacitor can be expressed as follows: ##EQU2## where
V stands for a power source voltage.
In FIG. 4B a voltage applied to one of the capacitors is given by V/2. A force f (newton) for lifting wafer 8 can be expressed as follows: ##EQU3##
The mass M and weight f of the wafer are given by:
M=ρ0πR.sup.2 t (6)
f=MG=ρ0πR.sup.2 tG (7)
ρ0: the specific gravity
R : the radius of the wafer
t : the thickness of the wafer
G : the acceleration rate of a gravity (9.8 m/sec2)
The mass M and weight f of the silicon wafer are given by the following Table:
______________________________________Mass & Weight of Si WaferWafer 2R t M f______________________________________2" 5.08 � 10.sup.-2 m 3 � 10.sup.-4 m 1.41 g 1.39 � 10.sup.-2 N4" 1.016 � 10.sup.-2 m 4 � 10.sup.-4 m 7.54 g 7.39 � 10.sup.-2 N6" 1.524 � 10.sup.-2 m 5 � 10.sup.-4 m 21.22 g 2.08 � 10.sup.-1 N8" 2.032 � 10.sup.-2 m 6 � 10.sup.-4 m 45.27 g 4.44 � 10.sup.-1______________________________________ N
The specific gravity, ρ0, of Si is:
2.328 g/cm.sup.3 =2.328�10.sup.3 kg/m.sup.3
From Equations (5) and (7) a voltage necessary to attractively lift the wafer of a weight given by Equation (7) will be: ##EQU4## where
εx denotes the relative dielectric constant of the insulating film.
A voltage V necessary to attractively lift the wafer with an air gap x left relative to the insulating film, i.e., when it is not completely in contact with the insulating film, can be given by: ##EQU5##
With, for example, R=50 mm, W=5 mm, D=10 mm, δ=10 μm and εx =2.5, a voltage V necessary to attractively lift the wafer of M=2.36 g (f=2.31�10-2 N) becomes 24 V from Equation (9). Needless to say, since the wafer is not completely attached by electrostatic chuck 10 to be insulating film, a voltage of about a few hundreds of volts (a value greater than the aforementioned value) will be required.
Where for a 7-inch wafer use is made of an electrostatic chuck having a pair of electrodes made of aluminum with an insulating film covered on the electrodes, wafer 8 can readily be attracted, under a voltage of about 500 V, to the wafer attraction sections for delivery, provided that R=50 mm, D=10 mm, δ=10 μm, εx = 2.5 and W (the width of the wafer attraction sections 15aand 16a)=5 mm. Usually, the surface of the wafer is flat on the order of a few angstroms and, when being attracted to the electrode unit of the electrostatic chuck, the wafer is not separated from the electrostatic chuck under its own weight even if the applied voltage is returned to a "0" voltage.
The problem as encountered when the wafer is fed with the use of electrode unit 17 of the electrostatic unit is the separation of wafer 8 from the wafer attraction section of electrode unit 17. In the aforementioned electrostatic chuck for the 7-inch wafer, the wafer can be attracted to the wafer attraction section with a width W of, for example, 5 mm or greater, but it cannot be dropped away from the wafer attraction section under its own weight merely by an electrical operation per se, though depending upon the diameter of the wafer. The addition of any extra separation mechanism causes a possible increase in the generation of particles. It is preferred that the wafer be attracted to, dropped under its own weight from, the wafer attraction sections.
Where the width W of the wafer attraction sections 15a and 16a of electrodes 11 and 12 in the electrode unit of the electrostatic chuck is set to be about 0.2 mm to 1 mm, then the wafer can be attracted to the wafer attraction section under an application voltage of 500 to 700 V. Where the application voltage is reduced to below about 200 to 300 V, then the wafer can be dropped from the electrostatic chuck under its own weight. Where the wafer, while being attractively held, is fed forward, the width W of the wafer attraction section should adequately be narrowed to such an extent that the wafer can be dropped under its own weight from the chuck. Cutouts may be provided in places at the outer marginal portion of the wafer attraction section with the width W of the wafer attraction section set to be about 1 to 2 mm. The effective wafer attraction section may be set smaller than a predetermined value.
Thus the width of the wafer attraction section is basically related to its whole attraction area.
In this way the wafer can be attractively lifted at its marginal portion, i.e., at an area about 1 mm inside its outer periphery and fed forward in a manner to be supported at the lower side of electrostatic chuck 10. As appreciated from the above, a near-ideal wafer feeding apparatus can be provided which hardly damages or contaminates a device (ICs or LSIs) formation area of the wafer.
Wafer feeding apparatus 1 having the electrode unit at the electrostatic chuck will be explained below.
Wafer 8 is fed through a belt conveying mechanism and another handling mechanism to preparatory chamber 4 in a vertical direction as viewed from FIG. 1 and placed on susceptor 7.
When high pressure air is exhausted through channel 61a communicating with upper chamber 68 by means of bellows as shown in FIG. 2A, movable base 62 is vertically lowered to permit electrostatic chuck 10 to be attached to the marginal portion of wafer 8. At this time a voltage of above a predetermined level, such as above 500 V, is applied to electrodes 11 and 12 of electrostatic chuck 10 to cause wafer 8 to the wafer attraction section. When a predetermined amount of high pressure air is introduced into upper chamber 68 from channel 69 communicating with upper chamber 68, movable base 62 is moved slightly upward against the forces of springs 63, 63, and 64, 64 to allow electrostatic chuck to be moved away from the upper surface of susceptor 7 with wafer 8 held as it is.
In this state, when high pressure air is introduced into cylinder chamber 52 and air in cylinder chamber 53 is exhausted, then air cylinder 5b is moved ahead, advancing arm 5a toward reaction chamber 2 and opening the gate (3) to allow wafer 8 to be fed into reaction chamber 2.
The forward movement of arm 5a is, stopped at a proper position on a susceptor within reaction chamber 2 and high pressure air is removed from the interior of bellows 67, causing electrostatic chuck 10 to be lowered and stopped at such a place that wafer 8 is in contact with, or in close proximity to, the susceptor within reaction chamber 2. When a voltage across electrodes 11 and 12 in electrostatic chuck 10 is dropped below a predetermined level, wafer 8 is released under its own weight.
Then high pressure air is introduced into cylinder chamber 53 and air in cylinder chamber 52 is vented, causing arm 5a to be retracted from reaction chamber 2 and closing the gate (3) with the result that arm 5a is retracted back to an initial position.
It is desired that, in order to hold the wafer surface under a clean circumstance and prevent particles from being deposited on the surface of the wafer even in the reaction chamber, the wafer be held, for example, at a vertical position or at such a tilting angle as to permit it to face downward.
When the wafer is to be taken out of preparatory chamber 4, it is fed from reaction chamber 2 back to preparatory chamber 4 by an operation opposite to that as set forth above. In this way the wafer is transferred between the susceptor of the preparatory chamber and that of the reaction chamber.
FIG. 5A shows another form of the electrostatic chuck section. In electrostatic chuck 10, wafer attraction sections 15 and 16 are provided at the inclined outer marginal edge portion in order to make the weight of the electrodes lighter and the exactly located electrostatic chuck relative to the wafer. Similarly, in electrostatic chuck section 30 as shown in FIG. 5B wafer attraction sections 31a and 31b of respective electrodes are about 1 to 2 mm in width and, for a 7-inch wafer structure, about 1.5 mm. In another form of the electrostatic chuck section as shown enlarged in FIG. 5C, wafer attraction section 31a is so formed that it is adjacent to area 32a of about 3 mm in width which is inclined at an angle of about 2 to 3� with substantially semicircular recess 32 formed inside the respective electrode.
FIG. 6A shows another form of the electrode unit. In this form of the electrode unit wafer attraction sections 33a and 33b, which are wavy in cross-section, are formed at respective electrodes of electrostatic chuck section 33 in which case peak in the wavy area is about 0.2 to 1 mm. In a form of an electrode unit as shown in FIG. 6C, a relatively gently curved area is provided as a wafer attraction section at respective electrode sections of an electrode unit.
FIG. 6C shows an electrode unit where wafer 8 is attracted not at its major surface, but at an outer peripheral edge portion. This is a structure where the wafer is contaminated to the least possible extent. In this form of the electrode unit, wafer attraction sections 34a, 34b are gently inclined at the respective electrode sections of that electrode unit. In an electrostatic chuck section use is made of an electrode unit whose electrodes are a partially circular ring-like in configuration, rather than a partially circular in configuration. In this form, semicircular ring-like electrodes 11 and 12 are formed near an insulating film (for example, an anodized aluminum)-coated outer peripheral edge portion of a circular substrate and insulating layers 13 and 14, such as a Teflon, are formed on the surface of electrodes 11 and 12.
In either case, so long as the wafer is electrically attracted to, and released under its own weight from, the electrostatic chuck section, any electrostatic chuck may be employed, provided that the electrostatic chuck section can attract the wafer at the outer marginal portion by applying a DC voltage across at least two separted electrodes at the electrode unit of the electrostatic chuck section so that no adverse effect is caused at the major surface of the water.
An explanation has been given as to the mechanism for applying a voltage to the wafer as well as the mechanism for releasing the wafer from the electrostatic chuck section under its own weight by returning the application voltage to either a zero volt level or a voltage level below a predetermined level.
Since the wafer has only to be attracted with its major surface up, it is only necessary to return the application voltage to a zero volt level, or a voltage level below a predetermined level, at a necessary location. For example, the wafer is attracted by the electrostatic chuck, transferred to a proper place in reaction chamber 2 and placed at that location on the susceptor (substrate) within reaction chamber 2, or moved into light contact with, or in close proximity to, the susceptor and placed at a proper place on the susceptor through the returning of the application voltage to the zero voltage level.
In order to prevent a contamination from on a wafer-placed susceptor in a plasma process on, for example, a reactive ion etching (RIE) apparatus, a susceptor structure is often used with associated electrodes covered with an insulating material. It is often required that the wafer temperature be controlled with the wafer placed in intimate contact with the susceptor. The wafer may be released by applying an AC voltage across the associated electrodes with a DC voltage discontinued.
It is required that the wafer be located in a vertical position or be oriented with its surface down. Since in this case the wafer is attracted by the electrostatic force to the electrostatic chuck section, the electrostatic chuck section may be rotated or moved in any arbitrary direction with the wafer oriented vertically or downward.
FIG. 7 shows the case where a wafer is supported vertically. In the case of FIG. 7, wafer 8 is transferred to susceptor 21 which is grounded in the vertical state and set at that proper location.
With wafer 8 attracted to electrostatic chuck section 35 the wafer is brought into contact with susceptor 21 covered with insulating material 22. In this state, a voltage Vs is applied to susceptor 21, causing a voltage which has been impressed across voltages 11 and 12 on electrode chuck section 35 to be set to a zero volt level. This state can be expressed in terms of an electric circuit, as shown in FIG. 8. Reference numerals 19 and 20 denote capacitors (C, C) across wafer 8 and electrodes 11 and 12. Reference numeral 11 denotes a capacitor C0 formed across susceptor 21 and wafer 8.
A voltage V0 applied to capacitor C0 is given by: ##EQU6## Wafer 8 is placed, under that electrostatic force, in intimate contact with susceptor 21. Thereafter, if chuck 35 is moved away from susceptor 21, then the wafer is placed at a proper location on susceptor 21.
Although the susceptor has been explained as being grounded on the negative electrode side of a power source V, it may be grounded on the positive electrode side of the power source V. The positive or negative potential of a power source Vs may be employed. The whole system should be considered in a proper combination.
In the variant form of the electrode unit, as shown in FIGS. 3A and 3B, the thickness "h" of electrodes 11 and 12 may be preferably made thinner within an allowable mechanical accuracy level so that electrostatic chuck section 17 may not be made too large or too heavy. For example, the thickness "h" of the electrodes may be selected to be about 3 mm to 2 cm, depending upon the material of which the electrode is made.
The electrode material may be any conductor so long as it conducts current. Any electroconductive material may be used as such if it can offer a simpler electrical connection member, such as a wire. For example, use is made as such of a metal, such as aluminum and stainless steel or of a semiconductor material, such as silicon, which is obtained by adding an impurity at a certain high impurity level. That material should be determined from the circumstances where the present apparatus is employed.
As the insulating film to be coated on, for example, the wafer attraction section a somewhat heat-resistant insulating material may be selected which neither contaminates the silicon wafer nor evolves a greater quantity of gas in a vacuum. For example, use may be made as such of an imide-based resin such as a polyimide and of fluorine-based resin, such as a Teflon. The thickness of the insulating film of the wafer attraction section may be enough great to obtain an adequate voltage. As evident from Equation (8) the greater the thickness "δ" of the insulating film, the greater the voltage V required to attract the wafer will be increased in ratio with the thickness "δ".
If a system is used which conducts almost no current, it is very easy to provide an insulation against a voltage of about 1000 to 2000 V. For an insulation film of about 10 to 50 μm in thickness, for example, an adequate wafer attraction can be provided at an electric power of 500 to 1000 V even if use is made of either a polyimide-based resin or fluorine-based resin.
Although in the aforementioned embodiment a rodless air cylinder has been explained as being used to drive the arm forward and backward between the preparatory chamber and the processing chamber to allow the wafer to be transferred from the preparatory chamber to the processing chamber, any type of a movement mechanism may be used so long as an arm section can be moved directly from the preparatory chamber to the processing chamber and back to the preparatory chamber.
Although in the aforementioned embodiment the air cylinder type has been explained as the mechanism for moving the electrostatic chuck section up and down, it is not restricted thereto. If, for example, a shape memory alloy is used for such an up-down movement mechanism, the up-and-down movement can be controlled under an electric control.
Although in the aforementioned embodiment the wafer has been explained as attracting the wafer to the electrostatic chuck section and placing it on a proper place, the wafer attraction section may take various shapes, depending upon the shape of the wafer as well as the state in which the wafer is transferred, so that the wafer can be smoothly placed on, and removed from, a proper place.
A variant of the electrostatic chuck mechanism will be explained below with reference to FIGS. 10A and 10B.
Disc-like permanent magnet 101 is made of, for example, a rare-earth/cobalt-based material and plated at its surface with nickel. Magnet 101 is fixed to centerpiece 102 made of a metal of a high magnetic permeability, such as SS41, to provide a unit which is centrally located within container-like yoke 103 made of the same material as set forth above. This arrangement provides a magnetic circuit.
Circular bobbin 104 is made of a paramagnet, such as alumina, and provided at one surface with circular coil 105 made of, for example, a polyimide-coated electric wire and projected upward as viewed from FIG. 10A and at the other surface with electrostatic chuck 10 having a pair of semicircular electrodes 11 and 12 and attached to the aforementioned unit through insulating sheet 106 such as a Teflon. This arrangement provides a wafer holding assembly.
Circular coil 105 of bobbin 104 is inserted into an annular air gap defined by permanent magnet 101 and centerpiece 102 and yoke 103, and elastically supported by three leaf springs 108 which are located between yoke 103 and bobbin 104. In this way electrostatic chuck mechanism 6 is provided which is disposed at the forward end of the wafer feeding apparatus or arm 5a and electrically connected to a control apparatus not shown.
When a current I flows through coil 105, a force F indicated by
is applied to coil 105, where
B: the magnetic flux density of permanent magnet 101
θ: the angle defined by the magnetic flux in relation to coil 105
l: the length of coil 105
Bobbin 104 is elastically held by leaf springs 108. The distance by which bobbin 104 is moved up and down is determined by a balance between the spring constant of the leaf spring and the force F.
An amount of current I through coil 105 and variation of the current per unit time are controlled by the control apparatus, not shown, to permit the bobbin movement distance and speed to be controlled.
The wafer feeding apparatus of this invention includes an arm section moved back and forth in a direction in which the preparatory chamber is connected to a processing chamber, such as a reaction chamber, and electrostatic chuck having a plurality of electrodes for attractively holding a wafer and attached to the arm section to cause the wafer to be fed with the wafer attracted to the electrostatic chuck, whereby the forward and backward movement of the arm section can be properly controlled to cause the wafer to be fed from the preparatory chamber to the processing chamber to allow the wafer to be properly held and place it on a proper location under an electric control.
As a result, a wafer feeding apparatus can be implemented which can reduce the number of movable component parts required, can reduce the generation of particles to a lesser extent and can achieve a low-temperature process and higher selective process.
The adoption of the electrostatic chuck allows the use of either an ordinary or a lower pressure.
|Cited Patent
|Filing date
|Publication date
|Jan 16, 1978
|Jan 15, 1980
|Veeco Instruments Inc.
|Substrate clamping technique in IC fabrication processes
|Sep 29, 1982
|Oct 30, 1984
|Tokyo Shibaura Denki Kabushiki Kaisha
|Electrostatic chuck plate
|Jun 22, 1984
|Sep 24, 1985
|Hitachi, Ltd.
|Apparatus for molecular beam epitaxy
|Citing Patent
|Filing date
|Publication date
|Apr 10, 1989
|Oct 9, 1990
|Applied Materials, Inc.
|Isolated electrostatic wafer blade clamp
|Sep 6, 1989
|Mar 19, 1991
|Electrostatic handling device
|Sep 7, 1990
|Oct 8, 1991
|International Business Machines Corporation
|Electrostatic chuck having tapered electrodes
|Jun 10, 1994
|Feb 4, 1997
|The Morgan Crucible Company Plc
|Electrostatic chuck
|Jan 31, 1994
|Jul 1, 1997
|Applied Materials, Inc.
|Wafer handling within a vacuum chamber using vacuum
|Dec 22, 1995
|Sep 23, 1997
|Lam Research Corporation
|Shape memory alloy lift pins for semiconductor processing equipment
|Sep 26, 1996
|May 12, 1998
|Nikon Corporation
|Mask holding device and method for holding mask
|Dec 22, 1995
|Nov 24, 1998
|Lam Research Corporation
|Chuck for substrate processing and method for depositing a film in a radio frequency biased plasma chemical depositing system
|Dec 3, 1997
|Oct 31, 2000
|Mitsubishi Electronics America, Inc.
|Grounded packaged semiconductor structure and manufacturing method therefor
|Dec 2, 1998
|Feb 6, 2001
|Taiwan Semiconductor Manufacturing Co., Ltd.
|System for transporting and electrostatically chucking a semiconductor wafer or the like
|Jun 2, 1999
|Apr 24, 2001
|Applied Materials, Inc.
|Mechanically clamping robot wrist
|Sep 17, 1999
|Feb 4, 2003
|Applied Materials, Inc.
|Hydraulically actuated wafer clamp
|Sep 21, 2001
|Feb 4, 2003
|Applied Materials, Inc.
|Mechanical gripper for wafer handling robots
|Jun 3, 1999
|Mar 23, 2004
|Applied Materials, Inc.
|Robot blade for semiconductor processing equipment
|Jun 8, 2001
|Mar 8, 2005
|The Regents Of The University Of California
|Method and apparatus for fabricating self-assembling microstructures
|Jul 30, 2001
|Apr 11, 2006
|Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V.
|Mobile holder for a wafer
|Jun 6, 2007
|Jun 1, 2010
|The Regents Of The University Of California
|Method and apparatus for fabricating self-assembling microstructures
|Jun 27, 2011
|Aug 6, 2013
|Micron Technology, Inc.
|Methods of processing semiconductor substrates, electrostatic carriers for retaining substrates for processing, and assemblies comprising electrostatic carriers having substrates electrostatically bonded thereto
|Jun 18, 2013
|Jan 6, 2015
|Micron Technology, Inc.
|Methods of processing semiconductor substrates, electrostatic carriers for retaining substrates for processing, and assemblies comprising electrostatic carriers having substrates electrostatically bonded thereto
|Jun 8, 2001
|Oct 18, 2001
|Smith John Stephen
|Method and apparatus for fabricating self-assembling microstructures
|Jul 30, 2001
|Feb 26, 2004
|Christof Landesberger
|Mobile holder for a wafer
|Jun 6, 2007
|Mar 25, 2010
|The Regents Of The University Of California
|Method and apparatus for fabricating self-assembling microstructures
|Jan 8, 2010
|Jul 15, 2010
|Applied Materials, Inc.
|Systems, apparatus and methods for moving substrates
|Jun 27, 2011
|Oct 20, 2011
|Micron Technology, Inc.
|Methods of Processing Semiconductor Substrates, Electrostatic Carriers for Retaining Substrates for Processing, and Assemblies Comprising Electrostatic Carriers Having Substrates Electrostatically Bonded Thereto
|Sep 4, 2015
|Mar 9, 2017
|Globalfoundries Inc.
|Electrostatic substrate holder with non-planar surface and method of etching
|Jul 13, 2016
|Apr 20, 2017
|Boe Technology Group Co., Ltd.
|Back plate clamping device, alignment device and evaporation equipment
|Jan 13, 1994
|Jul 20, 1994
|Eaton Corporation
|Wafer sensing and clamping monitor
|Jul 30, 2001
|Feb 7, 2002
|Fraunhofer-Gesellschaft zur F�rderung der angewandten Forschung e. V.
|Mobile holder for a wafer
|U.S. Classification
|118/729, 361/234, 118/500
|International Classification
|Cooperative Classification
|European Classification
|Dec 29, 1987
Owner name: TOKYO ELECTRON LIMITED, 1-26-2, NISHI-SHINJUKU, SH
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST.;ASSIGNORS:OHMI, TADAHIRO;KUMAGAI, HIROMI;YANAGI, YOSHIAKI;REEL/FRAME:004817/0723
Effective date: 19860901
|Aug 12, 1991
|Fee payment
Year of fee payment: 4
|Aug 22, 1995
|Fee payment
Year of fee payment: 8
|Aug 10, 1999
|Fee payment
Year of fee payment: 12


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|Professional Automotive Repair Technical Discussions for November 15, 2011
International Automotive Technicians' Network (iATN) - Members Only
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|Vehicle Owners: If you are seeking an automotive repair professional to service your vehicle, visit the iATN Repair Shop Finder.
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|Help Request
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text:
My regular grocery shopping list usually comes with a big pouch of my family's favorite fabric softener. Lately though I want to venture on making my own homemade version, not only to save on costs, but also to be more gentle on our trusty washing machine.
You see, according to Engr. Google, the black specs that I recently discovered in the bottom of the WM drum can be attributed to excessive fabcon use. I was able to remedy the situation by running a hot soak, with some vinegar solution. I figured, if we will be able to use more natural ingredients, the problem may no longer recur.
You see, for Shobs' diapers, we only use vinegar as softener when the inserts get kind of stiff. For the kids' clothes we hardly use any. But the mister and I long for soft and mild smelling clothes, hence the use of fabcon.
Anyway, as always, I'll be sharing with you what I have researched on how to make homemade fabcon.
How to make homemade DIY Fabric conditioner in the Philippines:
1. Vinegar-Based. Ladies who are kind of apprehensive about using vinegar, listen up. The smell evaporates after 15-20 minutes and will just leave your clothes smelling fresh. This recipe, meantime, has an improved scent because you will be using the essential oil of your choice. Here are the ingredients: Three Cups of White Vinegar, half a cup of baking soda (baking SODA not BAKING POWDER), and about 10 drops of your favorite essential oil scent – you can buy it here, in the scent that you like. If you however want a pure, strong essential oil, then you may want to try this line, which you can buy here.
(Post continued below)
You may also want to read:
- Homemade DIY Dishwashing Liquid
- How to make your own Laundry Detergent
- DIY Homemade and Baby-Safe Anti-Mosquito Spray
- Seven ways to save on Grocery Shopping
- Legitimate ways to earn money from home
- Seven Filipino Ulam Recipes under P100.00
- Where to find Katsa or Flour Sack Cloth for DIY Cloth Diapers
- How to Disinfect your Washing Machine
- Where to buy washable Menstrual Pads
2. Super Cheap. If you do not want to spend anything anymore and just want to source ingredients from your own home, then this is the recipe for you. It just uses hair conditioner, white vinegar, and water. Get the directions here as shared by one of my favorite homemaking websites, One Good Thing by Jillee.
3. Simple and Neat. This one is fairly easy, just substitute Epsom salt with our usual rock salt. Again, you can get your essential oils here. Check out the procedure as posted at Everyday Roots here.
So there you have it. Hope you could indulge your inner DIY Diva soon and try out these homemade fabric conditioner recipes.
Also if you have the time, please drop by my Facebook page and hit the like button, so you can receive regular updates from Happypinaymommy.com direct on your newsfeed.
Thank you so much!
A Happy Homemaker is a Happy Pinay Mommy!
Leaving you with this DIY Video on Homemade Fabric Conditioner:


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It took bloody forever. I gave many false starts. The site ended up broken for two months while I tried to manage it. But RPG Palace is now officially hosted on HostGator. I for one welcome our new reptilian overlords.
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Technically my son Cedar does attend a real school. It's a Free School, but school none the less. However, since we've been an unschooling family since Cedar was born we get asked, "Why doesn't your son go to a "real" school?" often.
Normally this question is partnered with a look of shock, as if I just punched a kitten or something. I don't like the looks, but the question is easy enough to answer. Really I could sum it up with what Peter Sacks, the author of Standardized Minds said in an interview I read:
"We should hold schools accountable for something meaningful. For outcomes that have a real connection to the American economy and the productivity of citizens in a democracy. That demands citizens with creative, intelligent, critical minds—not standardized minds."
I 100% agree. Technically, I'll go a step further and say parents and caregivers, not just schools should be accountable for this, but well, you get the gist.
Most schools hold kids accountable for test scores and grades, not creative critical minds, so why would I send my son there? That said I do have some other reasons as well.
Article content
- Schools forget that little things matter
- Memorizing arbitrary facts for tests is not learning
- Punishment and reward
- Schools decide what, when and how kids will learn
- Everyone learns differently
- I don't want Cedar drilled about topics
- Schools give kids labels
- Random other reasons
- My son's life doesn't start someday – it's happening now
Schools forget that little things matter
Take desks for example. Most people don't consider desks much. However, I don't want Cedar forced to sit in an uncomfortable desk for the first 12+ years of his life. I'd be hard pressed to ask that of anyone, even someone I don't like, so I especially wouldn't ask my own child to do this.
There are plenty of other little things that bother me about school too. For example, I don't think Cedar should have to ask every time he wants to speak, or get a drink or use the restroom. In adult life most of us get the luxury of doing these things when we choose, and having this freedom also allows us to learn when appropriate times for all these activities may be.
A girl I know who goes to public school recently told me that she hates having to ask to go to the restroom. She says it makes her feel out of control of her own life. It should. If you have to ask for such small things, you aren't in any sort of control of your life – that's someone else controlling your every minute. Kids who don't have control of these 'small' issues can't easily learn how to regulate their own time – a useful skill.
Memorizing arbitrary facts for tests is not learning
Schools confuse test taking skills for smart and/or successful. As noted before, in school I did great on multiple choice exams. However, in reality I was officially learning very little that would take me though life. Good tests scores don't equal smart or long term success or even indicate that you've learned something new.
Good test scores may mean you've learned stuff but it also might just mean you memorized enough stuff to pass the test, guessed correctly or that you just naturally do well on tests. During school, my friends and I would memorize facts just long enough so that we could cough them back up for a test.
I know public and charter school kids who do this now as well. Training a child to take and pass a test doesn't actually mean that child has mastered certain skills, it means the child has mastered what's on that specific test. Life is full of loops and whirls that kids need to be ready for, and that means well-rounded learning and experiences choices, not tests.
Learn more about testing issues AND No Child Left Behind.
Punishment and reward
Schools (and many parents) offer coercion, rewards and punishments attached to learning. Learning, real learning isn't about that. I want Cedar to know that learning is about gaining knowledge, skills or fun; not gaining material rewards.
Learning certain skills can pay off with material rewards in some circumstances. It's fair for kids to know about natural consequences. For example, picking up a new skill at work can earn you a promotion or learning to read can help you beat a hard video game – but rewards or punishment shouldn't be the main motivation for learning.
Schools decide what, when and how kids will learn
Traditional school systems choose what kids should know with very little parent or child input, then they decide which kids have learned this stuff up to snuff. Kids who do learn what the school deems necessary are considered a success and the kids themselves have little say in what constitutes 'success' in the school atmosphere.
FROM AN ADULT POINT OF VIEW: Honestly, as an adult, would you take up new activities or try to learn new skills if you knew there would always be a set way to do it, a time limit and a final grade involved. Would you want to learn to garden, play the guitar or how to make good pie crust if a major judgment call was going to be made about you based on another person's idea of a successful project?
Everyone learns differently
Schools don't have enough time, money or staff to make sure everyone gets to learn in a way that's best for them. If you're not learning in a way that's best for you, learning doesn't work as well.
Kids who learn with their own style or in their own time aren't valued by the school system. It's not technically the system's fault, or the kid's either, but it's just a fact of school. If you had a class of 30-40 kids and the goal was to get them to the same place at the same time, test proficiency wise, there's no way you'd be able to cater to individual learning styles either.
I'm sure there are more decent schools than others and some teachers are very nice and do try – but the plain fact is there are too many kids and not enough time in most schools.
I don't want Cedar drilled about topics
I really don't want Cedar drilled about any topics, but most of all I don't want him drilled about facts and topics he's interested in. What a great way to kill something that was once enjoyable. If someone drilled and tested me every time I asked a question about my favorite topic, I'd quit asking and likely lose interest.
Schools give kids labels
Lucky kids in school win labels like A or B; quiet, advanced group one, smart, popular and good – i.e. successful. Others, not so lucky kids get called lazy, hyperactive, bad, disabled, D, F, and dumb – i.e. not successful. Almost everyone in school ends up labeled as something and sometimes those labels follow you for a very long time.
Random other reasons
- I don't want Cedar to assume that learning happens Monday through Friday from 9am to 3pm. I want him to know that learning is a natural part of life not based on some arbitrary time table.
- I believe that anyone's natural learning process can be hindered (or lost altogether) when too much emphasis is placed on standardized tests, grades, set curriculum and scheduled learning.
- There's a million little annoying issues too such as limited movement allowed, bells dividing your day into pieces, 15 minutes to eat and so on.
My son's life doesn't start someday – it's happening now
Schools very much focused on someday qualities. Once you get this A; once you pass this test; once you graduate and go to college; etc. Schools commented to me, and other people I know that "school is for getting you ready for real life." In fact, your real life starts at birth; not many degrees later.
I hate that most school systems set you up to wait and wait to live and don't trust that you're born a fully capable human, if given the chance to be a fully capable human. You don't just magically become alive and needing of autonomy at the age of 18 or 20. My son learns, asks questions and makes decisions now. He has interests and dislikes and goals now.
I'd like for Cedar to have the time to follow his interests now if he was in a real school that would be impossible. Kids in school don't get to participate in their own life as much because they have to spend so much time doing what the school decides is important for their life, rather than what the child finds important.
So, that's why Cedar doesn't attend a "real" school – in a not so small nutshell.
Image ©kaboompics via Pixabay


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Use Angular, TypeScript or JavaScript to build truly native mobile apps
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Build engaging multi-channel web and digital experiences with intuitive web content management
Progress proudly announces its seventh Stevie® Award so far in 2016, for a grand total of 21 since 2013.
The Stevie Awards is the world's premier business awards competition, receiving more than 10,000 entries each year from organizations in more than 60 nations. Stevies honor the achievements and positive contributions of organizations and working professionals worldwide.
Progress wins for 2016 include three Stevies from the American Business Awards:
As well as two People's Choice Stevie Awards for favorite new products:
Progress was crowned with two more Stevies at the Asia-Pacific Stevie Awards for Innovation in Technology Development:
Since 2013, Progress has won a whopping 21 Stevie awards.
American Business Awards
International Business Awards
Stevie Awards for Women in Business
More than 250 professionals worldwide participated in the judging process to select this year's Stevie Award winners. Details about the awards and the list of 2016 Stevie winners are available at www.StevieAwards.com.
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Copyright © 2018 Progress Software Corporation and/or its subsidiaries or affiliates. All Rights Reserved.
Progress, Telerik, and certain product names used herein are trademarks or registered trademarks of Progress Software Corporation and/or one of its subsidiaries or affiliates in the U.S. and/or other countries. See Trademarks for appropriate markings.


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Practical Sessions with a Hitachi Desktop SEM & Keyence 3D Microscope
Practical sessions with Scanning Electron Microscopy and digital microscopic examination of archaeological and historic samples; as well as an opportunity to visit the CSI: Sittingbourne public access conservation lab, and The Forum Heritage Hub. Participants will receive general theory and practice with reps from both Hitachi TM3000 low vacuum SEM, and Keyence 3D microscope; plus illustrations of how these microscopes have been employed for public engagement and archaeological conservation at CSI: Sittingbourne (IIC Keck Award winner 2012). Opportunity for examination of selected participants' samples and discounted future bookings for the 'CSI: Sittingbourne/RLAHA shared use SEM' included. The shared use SEM was purchased through funds donated by the Clothworkers Foundation.
Please bring your own lunch, or use one of The Forum or High Street Cafes.
For all enquiries please contact Dana Goodburn-Brown.
Closing date for registrations: Monday 20 February 2017.
10:30-11:00 coffee and look around
11:00-1:00 introduction and practical sessions (SEM & digital microscopy - split groups)
1:00-2:00 lunch (a range of digital microscope camera attachments will be available for trials, for those interested, eg. for stereo microscopes and mobile phones)
2:00-4:00 practical sessions & concluding remarks (SEM & digital/3D microscopy - split groups)
4:00-4:30 coffee/tea break and final look around
4:30-6:00 further analysis and discussions possible (and/or adjournment to a pub on the High St.)


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Michael Jackson nephew appointed co-guardian
LOS ANGELES (AP) -- A judge has appointed Michael Jackson's nephew to share guardianship responsibilities for the singer's three children.
Superior Court Judge Mitchell Beckloff during a hearing Wednesday named TJ Jackson as a co-guardian of the children who range in age from 10 to 15.
TJ Jackson will share responsibilities with Michael Jackson's mother, Katherine, who has cared for the children since the singer's death three years ago.
TJ Jackson is the son of Tito Jackson and performs with his brothers in the band 3T. According to court filings, he has remained close to his cousins, Prince, Paris and Blanket, since their father's death.
He was appointed a temporary guardian last month when Katherine Jackson was absent for several days and out of communication.
THIS IS A BREAKING NEWS UPDATE. Check back soon for further information. AP's earlier story is below.
A judge is expected to appoint Michael Jackson's nephew as a co-guardian of the late pop superstar's children on Wednesday, establishing continuity for them in case their grandmother becomes unable to raise them.
Superior Court Judge Mitchell Beckloff has said he is inclined to appoint Tito Jackson's son, TJ, to share guardianship responsibilities with Michael Jackson's mother. The 34-year-old stepped in and was appointed a temporary guardian last month when Katherine Jackson was incommunicado during a stay at an Arizona spa with relatives.
Beckloff has said Katherine Jackson is doing a great job raising Prince, Paris and Blanket Jackson, who range in ages from 10 to 15. The Jackson family matriarch's absence coincided with a split in the family over whether to support the executors of the late singer's estate, some of whom think should resign.
Katherine and TJ Jackson have agreed to the co-guardianship arrangement, which is aimed at alleviating stress on the children's 82-year grandmother. The agreement calls for the other to assume sole guardianship duties if the other is unable to serve any longer.
TJ Jackson was a relative unknown to the public before the recent rift in the family. He performs in a band called 3T along with his brothers and was close to his uncle, Michael, before the pop star died unexpectedly in June 2009 at age 50.
TJ Jackson is a cousin of the children and has remained close to them in the three years since the singer's death.
Wednesday's hearing is expected to be a legal formality, with TJ Jackson already earning the support of the two oldest children. Their mother, Deborah Rowe, has also indicated she is comfortable with the arrangement.
Three of Michael Jackson's siblings, sisters Janet and Rebbie and younger brother Randy, have all expressed concerns about the administrators of the singer's estate and called on them to resign. The window to contest the singer's will is closed, but the trio said as recently as last week that challenging the executors remains their priority.
Jackson's estate has generated more than $475 million in gross earnings since the singer's death. He left his estate to benefit his mother and children, with a share allocated to unspecified charities.
Anthony McCartney can be reached at http://twitter.com/mccartneyAP


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Bandar Seri Begwan International Airport (BWN /WBSB )General information and contact details of Bandar Seri Begwan International Airport in Bandar Seri Begwan , Brunei
Brunei International Airport
Bandar Seri Begwan International Airport is major airport located in Bandar Seri Begwan, Brunei and serves domestic and international flights to 30 different destinations, connecting Bandar Seri Begwan with Asia, Oceania, Europe and Africa. The most popular destinations to fly to from Airport are Singapore, Jesselton, Kuala Lumpur, Manila International Airport (MIA) and Jakarta / Soekarno-Hatta . The longest flight you can take is to Jeddah King Abdul Aziz International Airport (10:00 hours) .
Carriers such as Royal Brunei Airlines, Singapore Airlines Cargo and Malaysia Airlines have regular flights to and from Airport.
Here you can find all the information about Airport location, arrivals and departures and learn important details about weather forecasts and current conditions. You may also read more about Airport in the Wiki tab and find other interesting pictures of it in the Photos section.
Are you looking for the spotting in Bandar Seri Begwan International Airport? You have chance to catch such impressive planes in Bandar Seri Begwan like Boeing 737 Passenger, Boeing 737-800 Passenger or Boeing 777-300 Passenger


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Category Archives: Commercial
It means a lot to me when local businesses trust me to create some new images for their website. It's especially meaningful when it's a business that has such a huge heart and does such important work with children with special needs–like New England Pediatric Services. NEPS began with two speech-language pathologists who were passionate…
Great job!
Awesome pictures and article……so proud of you.
those came out beautiful Erika!! nice work, as always! 🙂
I love the thought you put into this Erika. They are all beautiful! I love that location too…going to have to check that out!
I just had to tell you how amazing these photos are and what a great write up.
As a photographer and more importantly Cass' older brother, this gave me a HUGE smile!!!
Well done!
Okay Cass, it's time for your parents to meet everyone. We met Annie once almost 2 years ago.
ALL AMAZING ladies I'm sure!!
Recently I had the pleasure of being hired by the Bedford Village Inn to produce some new images of guest room interiors, a dining room, the outdoor patio dining area, and even a few food & drink items. Jack Carnavale, the owner, is a huge natural-light photography fan, and loved the fact that I work…
Stunning photos Erika. This place looks lovely!!
I agree…stunning!
Great work Erika! I have photographed some weddings here so I know the layout. You did a great job capturing the dark woods and the bright textures while maintaining the warm atmosphere of the place. BTW, sis you get to sample that blueberry drink? Yummmm!
very happy for you….a little jealous cause I had always wanted to shoot for them, but still very happy for you 🙂
thanks Jeremy 🙂
One of downtown's best kept secrets is the Patio restaurant inside the Hilton Garden Inn. This is no ordinary hotel fare; this is some seriously delicious and beautiful food created by executive chef Jason Jette and staff that should be on everyone's list to try. In the summer, the outdoor dining overlooking the Fisher Cats…
You can make a shoe box look good enough to eat!! Thank you for the eye candy and the suggestion. I have a new place on my list of places to try in ManchVegas. Keep up the great photography!!
beautiful shots as always Erika! hey…do you get to eat everything they bring to you to shoot? lol
thank you! haha, no…. but I have eaten there in the past and it's *really* good.
i would have trouble not eating as I was shooting. hehe Will have to check them out sometime! the food looks so yummy and captured perfectly!
After a long, gray winter, it is a sight for sore eyes when the colorful, fruity, pastel beauties from the spring and Easter menus start emerging from the Black Forest Cafe. This time around my assignment was to create beautiful marketing photos to showcase the new goodies, but also a new challenge: to create a…
[…] items. In addition, she has taken shots of our interior spaces for our website, and lately taken a great photo of one of our owners. All of her photos are wonderfully lit and creatively staged. I always have a difficult time […]
I love these! Great colors and light. I want some!
No words to describe the combination of deliciousness and art!
mutual appreciation!
The Pavilion is located in the Hilton Garden Inn, in downtown Manchester's beautiful millyard area. Executive Chef Jason Jette, Sous Chef Vlad, and the team create such impressively stylish dishes that are so beyond anything you typically think of "hotel food." When they started bringing out the dishes to photograph, I was kind of in jaw-dropping…
WOW, Erika…these are amazing! Food photography is so much more difficult than it looks!
So proud of you and Jason! A perfect blend of two amazingly talented people! Let me know what you think when you actually eat the food there. I'm drooling at these pictures!
BEAUTIFUL pictures!~
[…] It's always an enjoyable experience to work with them–please check out even more images from last fall's Pavilion menu. […]


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Richard Frank Perata, Sr.
- 86 years old
- Date of birth: March 25th, 1929
- Place of birth:
Berkeley, California, United States
- Date of passing: October 7th, 2015
- Place of passing:
Walnut Creek, California, United States
This memorial website was created in the memory of our loved one, Richard Perata, Sr., 86, born on March 25th, 1929 and passed away on October 7th, 2015. We will remember him forever.
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More than 70 killed in wave of bombings across Baghdad
Iraqis gather at the scene of one of the two car bombs that exploded near an used car dealerships in Baghdad's Habibiyah area on May 27(Ahmad Al-Rubaye/ AFP)
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More than 70 people were killed on Monday in a wave of bombings targeting Shi'ite shopping districts across Baghdad, Reuters reported.
More than a dozen blasts rocked markets and retail zones across the Iraqi capital, inckuding a twin car bomb attack that killed at least 13 people in thr Sadr district, Reuters quoted hospital and police officials as saying.
"A driver hit another car and left pretending to bring traffic police. Another car rushed to take him away and right after his car exploded among people who had gathered to see what was happening," bystander Hassan Kadhim told Reuters. "People were shouting for help and blood covered their faces."
No group has yet claimed responsibility for the attacks but Sunni militants and al-Qaeda aligned groups have increased sectarian bomb attacks on predominately Shi'ite areas of the country in recent months.
More than 700 people were killed in Iraq during April, according to UN figures, which is the highest monthly death toll in almost five years.