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Learn more about 400 lbs Capacity Commecial Grade Cherry Solid Wood Over Size Bar Stool:
Manufacturer: FurnitureM
Mfg Part#: PC501
Sku: 248402889
Package Weight: 1 lbs
See more in Chairs & Stools
|You have the bar, now you need the perfect bar stool. This stool is a classic with streamlined, armless design, tapered legs, footrest ring, and swiveling seat. What the sets the Sunhill Bar Stool apart is the open. This bar stool is constructed of durable hardwoods with a finish of burnished, rustic oak. The round seat is comfortable with padding covered in brown, bonded leather that is a snap to maintain. The seat height of this bar stool is 30.5 inches ? perfect for home or commercial bars. Another round, barkeep!|Feature thick solid wood frame, commercial grade, 400lbs capacity, 360 degree swivel|Extra wide, cushioned seat covered with dark brown bonded leather|Dimension: DIA 21" X 30"H|Fully assembled by manufactor, color might be slightly different than the picture


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MARIJUANA DUIs
Marijuana comes from the cannabis, or hemp, plant and has been used for centuries. Its psychoactive ingredient is Delta-9-Tetrahydrocannabinol, or THC. Marijuana stays in the body for days, and sometimes weeks. Depending on the frequency of smoking, drug tests can detect THC for 30 days or more after a person smokes pot. Hashish is made from the resin of the hemp plant.
Smoking marijuana has been decriminalized. But police still zealously arrest and prosecutors charge persons caught driving after smoking pot.
Difficult prosecution
Most marijuana DUI cases are very hard for the prosecution to prove. If a driver just smoked marijuana without consuming any alcohol, the case is usually very difficult for the prosecution. Recent studies show that at low levels of THC, driving actually improves!
Marijuana DUIs become more problematic if the driver has consumed alcohol and/or controlled drugs in addition to marijuana. Alcohol and/or controlled substances may produce a synergistic effect (the effects of each drug enhances the effect of other drugs or alcohol, and thus create potential greater impairment).
When police suspect marijuana use, they will insist upon a blood or urine test. The test will only show the presence, if any, of THC, the active ingredient in marijuana. As stated above, marijuana can be present in the blood for 30 days or more. Therefore, the mere presence of marijuana in a driver's blood certainly is not evidence of impairment at the time of driving. Moreover, a person who smokes pot regularly may have developed a tolerance to its effects, as well as an ability to compensate for any difficulties experienced while driving after smoking it.
A person charged with a DUI involving marijuana ought to consult with an experienced attorney as soon as possible to review the specific facts of the case.

subset: commoncrawl


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In top restaurants there's a table reserved for a select few, providing exclusive access and one-on-one interaction with the chef. Unfortunately, that exclusivity comes with a hefty price tag, one that's out of reach for most people. At our Chef's Table Events, foodies meet the chef in an intimate - and affordable - setting.
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"The Dresser" debuts tonight at the Johnson City Community Theatre.
Show dates are tonight, Aug. 9, 15 and 16 at 7:30 p.m., with matinees on Aug. 10 and 17 at 2 p.m.
Set during World War II in England, "The Dresser" lets the audience peek inside an actor's world backstage. Based on actual events experienced by writer Ronald Harwood when he was a dresser for legendary English actor/manager Sir Donald Wolfit, the audience is taken on a journey of what it is like to be backstage during a theatrical performance, as well as the egos that can be encountered among any troupe of performers.
The reverent and endearing "Sir," depicted by Angus Walton, is a man who has sacrificed his life for the passionate addiction of performing only to be at a crux with his health, his love and the decision to retire. Mike Lily portrays the dedicated dresser, Laura Berry is Sir's lady love and fellow cast members Sabra Hayden, Jason Headen, Emily Nagy and Robert Shields portray the theatrical troupe that Sir has put together over the years. Long-time theatre patron and actress Vicky Livesay directs this testament to the experiences, memories and friendships formed backstage.
Theatre doors will open 45 minutes early for purchasing tickets and seating. Tickets are $15, with discounted prices for seniors, students, military, Mountain State Health Alliance employees or groups of 15 or more. For more information or to purchase tickets, go to www.jcct.info or call 926-2542.comments powered by Disqus


text: Publications Search Results Users may wish to consult What's Included in the Bibliography. Results 1 - 1 Results per page: 25 50 100 Sort by: Pub Date (newest) Title Recent Additions Author Clear All Pub. Year Citation 1984 Chang, M.C. . Determinants of fertility control in Taiwan: An application of the Easterlin framework. Jing Ji Lun Wen. 12, (1), 123-152. Full Text Options: Worldcat Google Scholar Export Options: RIS EndNote XML [1]


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An epitaxial growth system comprises a housing around an epitaxial growth chamber. A substrate support is located within the growth chamber. A gallium source introduces gallium into the growth chamber and directs the gallium towards the substrate. An activated nitrogen source introduces activated nitrogen into the growth chamber and directs the activated nitrogen towards the substrate. The activated nitrogen comprises ionic nitrogen species and atomic nitrogen species. An external magnet and/or an exit aperture control the amount of atomic nitrogen species and ionic nitrogen species reaching the substrate.
1. A method for epitaxially growing GaN layers comprising the steps of:
providing a substrate within an epitaxial growth chamber;
introducing molecular gallium into the growth chamber and directing the molecular gallium toward the substrate;
introducing activated nitrogen from a nitrogen source into the growth chamber and directing the activated nitrogen toward the substrate, the activated nitrogen comprising ionic and neutral excited species, wherein the neutral excited species comprise atomic species and excited molecular species;
controlling the ratio of the neutral excited species versus the ionic nitrogen species by varying the diameter of an exit aperture of the nitrogen source; and
growing a GaN layer on the substrate.
2. The method of claim, 1 wherein the step of controlling comprises the step of biasing the substrate.
3. The method of claim 1 wherein the step of controlling comprises the step of locating a magnetic device at a position with respect to the growth chamber to attract ionic nitrogen species away from the substrate.
4. The method of claim 1 wherein the activated nitrogen is provided with an activated nitrogen source and the step of controlling comprises the step of controlling the pressure inside the activated nitrogen source.
5. The method of claim 3 wherein the step of introducing activated nitrogen comprises introducing activated nitrogen through an ECR source having an exit aperture and wherein the step of controlling the pressure comprises the step of varying the diameter of the exit aperture.
6. The method of claim 1 further comprising the steps of:
growing a GaN buffer layer on the substrate at a first temperature;
raising the temperature to a second temperature higher than the first temperature;
growing a first doped GaN layer on the GaN buffer layer; and
growing a second doped GaN layer on the first doped GaN layer, the second doped GaN layer being doped oppositely to the first doped GaN layer.
7. The method of claim 5 further comprising the steps of:
contacting a first electrode to the first doped GaN layer; and
contacting a second electrode to the second doped GaN layer.
8. The method of claim 5 wherein one of the first and second doped GaN layers is doped p-type using magnesium.
9. The method of claim 5 further comprising the step of biasing the first and second doped GaN layers to form a light emitting device.
10. A method of making a light emitting device comprising the steps of:
providing a substrate within an epitaxial growth chamber;
introducing molecular gallium into the growth chamber and directing the molecular gallium toward the substrate;
introducing activated nitrogen from a nitrogen source into the growth chamber and directing the activated nitrogen toward the substrate, the activated nitrogen comprising ionic and neutral excited species, wherein the neutral excited species comprise atomic species and excited molecular species;
controlling the ratio of the neutral excited species versus the ionic nitrogen species by varying the diameter of an exit aperture of the nitrogen source; and
growing a GaN layer on the substrate.
This application is a continuation-in-part of application Ser. No. 08/113,964, filed Aug. 30, 1993, entitled "A METHOD FOR THE PREPARATION AND DOPING OF HIGHLY INSULATING MONOCRYSTALLINE GALLIUM NITRIDE THIN FILMS," which is now U.S. Pat. No. 5,385,862 which is a continuation of application Ser. No. 07/670,692, filed Mar. 18, 1991, which is abandoned. Attorney Docket No. 16865-0172, which was filed on Jan. 13, 1995 and which is a continuation of application Ser. No. 08/113,964, filed Aug. 30, 1993, entitled "A METHOD FOR THE PREPARATION AND DOPING OF HIGHLY INSULATING MONOCRYSTALLINE GALLIUM NITRIDE THIN FILMS" may also contain related subject matter.
The invention relates to light emitting devices, and specifically to light emitting III-V nitride devices. The invention further relates to a method of preparing monocrystalline gallium nitride thin films by electron cyclotron resonance microwave plasma assisted molecular beam epitaxy (ECR-assisted MBE). The invention also relates to a method for the preparation of n-type and p-type gallium nitride (GaN) films and a method for forming p-n junctions from these films.
Efforts have been made to prepare monocrystalline GaN because of its potentially useful electrical and optical properties. GaN is a potential source of inexpensive and compact solid-state blue lasers. The band gap for GaN is approximately 3.4 eV, which means that it can emit light on the edge of the UV-visible region.
Despite the desirability of a monocrystalline GaN layer, its development has been hampered by the many problems encountered during the growth process. Previous attempts to prepare monocrystalline GaN films have resulted in n-type films with high carrier concentration. The n-type characteristic is attributed to nitrogen vacancies in the crystal structure which are incorporated into the lattice during growth of the film. Hence, the film is unintentionally doped with nitrogen vacancies during growth. Nitrogen vacancies affect the electrical and optical properties of the film. ECR-assisted metalorganic vapor phase epitaxy gave GaN films that were highly conductive and unintentionally doped n-type (S. Zembutsu and T. Sasaki J. Cryst. Growth 77, 25-26 (1986)). Carrier concentrations and mobilities were in the range of 1�1019 cm-3 and 50-100 cm2 V-1 s-1. Efforts to dope the film p-type were not successful. The carrier concentration was reduced by compensation, that is, the effect of a donor impurity is "neutralized" by the addition of an acceptor impurity.
Highly resistive films were prepared by sputtering using an ultra-pure gallium target in a nitrogen atmosphere. The films were characterized n-type and the high resistivity was attributed to the polycrystalline nature of the films (E. Lakshmi, et al. Thin Solid Films 74, 77 (1977)).
In reactive ion molecular beam epitaxy, gallium was supplied from a standard effusion cell and nitrogen was supplied by way of an ionized beam. Monocrystalline films were characterized n-type, but higher resistivities of 106 Ω-cm and relatively low carrier concentrations and mobilities (1014 cm-3 1-10 cm2 V-1 s-1, respectively) were obtained (R. C. Powell, et al. in "Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors" Vol. 162, edited by J. T. Glass, R. Messier and N. Fujimori (Material Research Society, Pittsburgh, 1990) pp.525-530).
The only reported p-type GaN was a Mg-doped GaN treated after growth with low energy electron beam irradiation (LEEBI). P-type conduction was accomplished by compensation of n-type GaN (H. Amano et al. Jap. J Appl. Phys. 28(12), L2112-L2114 (1989)).
Current methods of preparing GaN do not permit control of nitrogen vacancies within the lattice. Thus it has not been possible to prepare intrinsic GaN. Additionally, it is desirable to control the doping process in GaN films, thereby enabling the production of p-n junctions. The present invention presents a method to prepare near-intrinsic monocrystalline GaN films and to selectively dope these films n- or p-type.
A method according to this invention for preparing highly insulating near-intrinsic monocrystalline GaN films uses ECR-assisted MBE. In a preferred embodiment, a molecular beam source of gallium (Ga) and an activated nitrogen (N) source is provided within an MBE growth chamber. The desired substrate is exposed to Ga and activated nitrogen. A film is epitaxially grown in a two step process comprising a low temperature nucleation step and a high temperature growth step. The nucleation step preferably occurs by exposure of the substrate to gallium and nitrogen plasma at a temperature preferably in the range of 100�-400� C., but temperatures up to 550� may also be used. The high temperature growth step is preferably carded out in the temperature range of 600�-900� C. Preferred substrates include, but are not limited to, (100) and (111) silicon; (0001) (basal plane), (11-20) (a-plane), and (1-102) (r-plane) sapphire; (111) and (100) gallium arsenide; magnesium oxide; zinc oxide; and (6H--) and (3C--) silicon carbide. The preferred source of activated nitrogen species is a nitrogen plasma which can be generated by electron cyclotron resonance microwave plasma or a hot tungsten filament or other conventional methods.
In a preferred embodiment, the nitrogen plasma pressure and Ga flux pressure are controlled, thus preventing the beading of metallic gallium on the film surface and the forming of nitrogen vacancies within the lattice. The Ga flux is preferably in the range of 2.0-5.0�10-7 torr. There is preferably an overpressure of nitrogen in the growth chamber, more preferably in the range of 10-3 -10-5 torr.
In yet another preferred embodiment, the low temperature nucleation step includes exposure of the substrate to Ga and nitrogen for a period of time in the range of 3-15 minutes. A film with a thickness of 200-500 Å is deposited which is amorphous or crystalline with defects (having a large number of misoriented domains and stacking faults) at the low temperature of the nucleation step. Also, a film of about 100-1000 Å may also be used. The nucleation step film can be further crystallized by heating at 600�-900� C. in the presence of activated nitrogen. Subsequent growth at higher temperatures, preferably 600�-900� C., results in the epitaxial growth of monocrystalline near-intrinsic GaN film. Preferred thickness of the growth layer is in the range of 0.5-10 μm.
In another aspect of this invention, the monocrystalline GaN film is preferentially doped n- or p-type. To generate a p-type semiconductor, the MBE growth chamber is equipped with Ga, activated nitrogen, and acceptor sources. Acceptor sources include Group II elements such as Be, Zn, Cd, Mg, and Ca. The substrate is bombarded with electrons either by applying a positive bias to the substrate surface or a metal grid placed directly in front of the substrate. Conditions for low and high temperature deposition are as described above. Exposing the substrate to Ga, nitrogen and acceptor sources results in a doped GaN film, whereby the acceptor takes on an electron and is incorporated into the lattice as a negatively charged species. A charged acceptor species requires less energy to incorporate into the GaN lattice than a neutral acceptor. To dope the material n-type the substrate is bombarded with positive ions by biasing either the substrate or the grid negatively. Thus, the donor impurities incorporate into the GaN in their charged state. This requires less energy than to incorporate a neutral donor species. Suitable donors include Groups IV and VI elements.
Practice of this invention affords near-intrinsic GaN films with resistivities of up to 1010 ohms-cm and mobilities of 100 cm2 V-1 s-1 at 200� C. At room temperature, mobilities of up to 1000 cm2 V-1 s-1 have been measured by photoconductivity measurements. P-type and n-type semiconductors can be selectively prepared simply by choice of surface or grid bias and impurity source. It is possible to efficiently manufacture p-n junctions using the methods of this invention.
According to another aspect of the invention group III-V nitrides can be used for fabrication of short wavelength light emitting devices and detectors due to the capability of obtaining a wide spectral region of direct band-to-band transitions (1.9-6.2 eV) as well as higher device stability than II-VI based devices.
According to another embodiment of the present invention, a p-n junction device comprises a substrate, an Ga-nitride buffer layer formed on the substrate, a first doped GaN layer formed on the GaN buffer layer, a second doped GaN layer doped oppositely of the first doped GaN layer formed on at least a portion of the first doped GaN layer. A first electrode contacting the first doped GaN layer and a second electrode contacting the second doped GaN layer are formed. This device provides a peak emission of about 430 nm.
According to a further aspect of the present invention a method of forming a p-n junction device comprises the steps of providing a hydrogen free enclosure in which a single crystalline substrate may be provided. Molecular gallium and activated nitrogen are then introduced into the enclosure at the substrate. The concentration of atomic or ionic nitrogen species directed at the substrate is controlled during growth of a GaN layer.
According to yet another aspect of the present invention, an epitaxial growth system comprises a housing around an epitaxial growth chamber. A substrate support is located within the growth chamber. A gallium source introduces gallium into the growth chamber and directs the gallium towards the substrate. An activated nitrogen source introduces activated nitrogen into the growth chamber and directs the activated nitrogen towards the substrate. The activated nitrogen comprises ionic nitrogen species and atomic nitrogen species. An external magnet and/or an exit aperture control the amount of atomic nitrogen species and ionic nitrogen species reaching the substrate.
FIG. 1 is a cross-sectional view of an ECR-assisted MBE growth chamber,
FIG. 2a is an X-ray diffraction pattern from a GaN film on (11-20) sapphire grown from a one-step process.
FIG. 2b is an X-ray diffraction pattern from a GaN film on (11-20) sapphire grown from a two-step process.
FIG. 3 is a schematic illustration of a device for doping GaN films.
FIG. 4 is a cross-sectional view of one embodiment of an ECR-assisted MBE growth chamber.
FIG. 5(a) is a schematic depiction of the flow of magnetic field lines emanating from an ECR source having no external solenoid.
FIG. 5(b) is a schematic depiction of the flow of magnetic field lines emanating from an ECR source when an external solenoid is used, according to one aspect of the present invention.
FIG. 6 is a graph showing the effects of variations in the magnet current for an external solenoid and the relative ion density at the substrate.
FIG. 7 is a graph showing the I-V characteristics of a Lungmuir probe operating in a device according to one aspect of the invention.
FIG. 8 is a schematic illustration of an effusion cell exit aperture according to one aspect of the present invention.
FIG. 9 is a graph illustrating an optical emission spectra for an ECR nitrogen plasma source.
FIG. 10 is a graph illustrating an optical emission spectra for an ECR nitrogen plasma source operating with an exit aperture according to an embodiment of the present invention.
FIG. 11 is a graph illustrating relative ion emission intensity as a function of the nitrogen flow rate and aperture size of an ECR device according to one aspect of the present invention.
FIG. 12 is a p-n junction device according to one embodiment of the present invention.
FIG. 13(a)-(c) depict surface morphologies of films grown according to the present invention using an ECR source operating at different microwave powers.
FIG. 14 is a p-n junction device according to another embodiment of the present invention.
FIG. 15 is a graph showing the EL spectra of a light emitting diode grown without (a) and with (b) an external solenoid.
FIG. 16 is a graph showing the I-V characteristics of a p-n junction device according to one embodiment of the present invention.
The unintentional doping of GaN has been attributed to the formation of nitrogen vacancies in the GaN lattice. GaN decomposes (and loses nitrogen) at about 650� C., well below the processing temperatures (>1000� C.) of the MOCVD processes referred to above. Therefore, the growth process itself provides sufficient thermal energy for vacancy formation. Growth processes at lower temperatures should reduce the number of nitrogen vacancies in the lattice, prevent the unintentional n-type doping of the GaN lattice and result in intrinsic GaN.
The practice of the present invention forms GaN at significantly lower processing temperatures using an activated nitrogen source. An ECR microwave nitrogen plasma is the preferred activated nitrogen source. A two step heating process permits the formation of monocrystalline GaN at lower processing temperatures.
One embodiment of an ECR-MBE system used in the present invention is shown in FIG. 1. An ECR-system 10 is integrated with an MBE system 11 by attaching the ECR system 10 to an effusion port 12. ECR system 10 may be an AsTeX model-1000 ECR source, for example. The ECR system 10 includes a microwave generator 13, a waveguide 14, a high vacuum plasma chamber 15, and two electromagnets 16 and 17. The microwaves at 2.43 GHz are created in the microwave generator 13 and travel down the rectangular waveguide 14. The microwave power (100-500 W) passes from the waveguide 14 into the plasma chamber 15. Nitrogen flows into the plasma chamber 15 through a mass flow controller 18. The mass flow controller 18 maintains an adjustable constant flow rate. The plasma chamber 15 is surrounded by the two electromagnets 16 and 17. The upper magnet 16 is powered by a 2 kW power supply (not shown) and the lower magnet 17 is powered by a 5 kW power supply (not shown). Positioning of the electromagnets in this way results in a more intense and stable plasma.
The upper electromagnet 16 sets the free electrons in the chamber 15 into cyclotron orbits. The cyclotron frequency is dependent upon the strength of the magnetic field and the electron charge-to-mass ratio. Since all the electrons assume cyclotron orbits, the energy lost in random motion and collisions is reduced. Additionally, the plasma will be confined to the center of the chamber 15. The magnetic field is adjusted such that the frequency of oscillation of the microwaves is exactly equal to the cyclotron frequency of the electrons. Nitrogen (N2) is then introduced into the chamber through the mass flow controller 18 and part of it is decomposed into atomic and ionic nitrogen and another part of it is converted into excited molecular nitrogen (N2 *) by impact with the high energy electrons. Atomic nitrogen species and excited molecular species are known as neutral excited species. The lower electromagnet 17 then guides the ions through the effusion port 12 towards a substrate 19 which is positioned on and supported by a continuous azimuthal rotation (C.A.R.) unit 20 in a growth chamber 21 of the MBE system 11. The growth chamber 21 is located in a housing 50 into which the effusion ports are connected. The C.A.R. 20 can be rotated between 0 and 120 rpm. On certain substrates, GaN films grow in the wurtzite structure and on others in the zincblende structure. Such substrates include for example sapphire (GaN in wurtzitic structure) and Si(100) (GaN in zincblende structure). Gallium flux is generated in a Knudsen effusion cell 22.
In a typical process, the substrate 19 is sputter-etched by the nitrogen plasma at about 600� C., for example. Other high temperatures, from about 600� C. to about 900� C., for example, may also be used. This process effects nitridation. Nitridation is a process in which sapphire (Al2 O3) is bombarded with nitrogen at relatively high temperatures. The nitrogen replaces the oxygen on the surface of the sapphire and creates atomically smooth AlN. After nitridation, the substrate is cooled down to 270� C. in the presence of the nitrogen plasma. A gallium shutter 23 is then opened to deposit the initial buffer layer of GaN. The use of an activated nitrogen source permits the deposition of GaN at this low temperature. The buffer layer is allowed to nucleate over ten minutes, for example, and then the gallium shutter 23 is closed to stop the nucleation of the film. The substrate is then brought slowly to 600� C. at the rate of 4� C. every 15 seconds in the presence of the nitrogen plasma. The nitrogen overpressure also helps reduce the formation of nitrogen vacancies.
Once at 600� C., the substrate 19 is kept at this temperature for 30 minutes in the presence of nitrogen plasma to ensure that the GaN buffer layer crystallizes. The gallium shutter 23 is opened once again to grow the GaN monocrystalline film. The thickness of the film is preferably about 1 μm, although in theory there is no limitation to film thickness. Nitrogen pressure and gallium flux are kept constant during the entire process.
The two step growth process allows for the nucleation of a buffer layer. The buffer layer is grown at a temperature in the range of 100� C.-400� C. but a range of about 100� C. to about 550� C. may also be used. Up to about 400� C., the nucleation layer is mostly amorphous. At about 400� C., the layer becomes crystalline with defects due to stacking faults and misoriented domains. If an amorphous nucleation layer is grown, the layer should be relatively thin (e.g. about 100-200 Å), but should completely cover the substrate. On some instances, thinner buffer layers are desirable because subsequent crystallization of a thin amorphous nucleation layer will be more efficient and will not take as much time as a thicker amorphous layer would. An advantage of using a temperature that causes an amorphous layer is that amorphous layers more readily uniformly cover the entire substrate.
At higher temperatures, such as between about 400� C. and about 550� C., for example, GaN layers are crystalline, though slightly defective. Due to the growth mode at these temperatures being either columnar or three-dimensional, these layers may need to be slightly thicker to ensure complete coverage of the substrate. Slightly defective crystalline buffer layers may be grown from about 200 Å to about 1000 Å, for example.
After the nucleation step, the temperatures increased to a high temperature level to perform a growth step. At these higher temperatures from about 600� C. to about 900� C., for example, amorphous buffer layers crystallize and crystallinity of the defective crystalline buffer layers improves. Since thinner amorphous buffer layers crystallize at a faster rate than do thicker amorphous buffer layers, it may be desirable to sustain the temperature in the chamber at a temperature higher than the nucleation temperature for a period of time before beginning the growth step to ensure the desired crystallization of the nucleation layer. After the amorphous buffer layer has crystallized, or the defective crystalline nucleation layer undergoes further recrystallization, any further growth takes place on the crystallized GaN buffer layer. The films grown by this two step process are superior to those grown by a one step growth process.
FIG. 2 shows the X-ray diffraction (XRD) pattern of a GaN film grown on the α-plane of sapphire (11-20) in a one-step process (FIG. 2A) and a two step process (FIG. 2B). The two peaks at about ca. 20Θ=35� of FIG. 2A are attributed to a defective GaN crystal. FIG. 2B has a single peak indicating a film of better quality. This is because the majority of the film grows on the top of the GaN buffer and does not contact the underlying substrate. The growth layer of GaN "recognizes" the GaN buffer layer on which it can grow without defects. The buffer is the only part of the film which is highly defective. Films grown by the method described above were highly resistive at room temperature (1012 Ω-cm).
GaN films are doped n-type or p-type by incorporating the proper impurities in their charged state. This is because the energy to incorporate a charged impurity into the lattice is lower than the energy needed to incorporate a neutral impurity. FIG. 3 is a schematic illustration of an apparatus for incorporating a charged acceptor or donor into the GaN lattice. The substrate 19 or a grid 19a, directly in front of the substrate 19, is positively biased. FIG. 3 shows both substrate 19 and grid 19a connected to a voltage source. In practice of this invention, either substrate 19 or grid 19a may be positively biased. Electrons are therefore attracted to the substrate surface, while positive ions such as N+ are repelled. The growth process is carried out as described above with addition of an acceptor source 24 so that gallium, nitrogen and acceptors are deposited on the electron-rich surface of the substrate. As the acceptor atom approaches the surface, it takes on an electron and is incorporated into the lattice as a negative species. The same procedure is used to dope the GaN lattice with donor impurities, except that a negative bias is used on the substrate or the grid. Alternatively, a charged surface can be generated by bombarding the substrate with electrons or positive ions. Electron guns and ion guns, respectively, are conventional sources of these species.
Suitable acceptor species include, but are not limited to, zinc, magnesium, beryllium, and calcium. Suitable donor species include, but are not limited to, silicon, germanium, oxygen, selenium, and sulfur.
In another embodiment of the present invention, a compact ECR source may be used. FIG. 4 depicts a compact ECR-assisted MBE device 100 having a compact ECR-system 25 mounted in a Knudsen effusion cell 30. Thus, this source generates a nitrogen plasma closer to the substrate 19 than a conventional ECR source. Compact ECR-system 25 has an axial solenoid (not shown) to generate the magnetic field used for ECR operation. Compact ECR-system 25 is supplied with nitrogen via nitrogen supply 32. The nitrogen is first purified in nitrogen purifier 28 before entering compact ECR-system 25. Compact ECR-system 25 may be an AsTeX compact ECR source, for example. Compact ECR-system 25 is preferably lightweight, relatively inexpensive compared to traditional ECR sources and operates at much lower microwave powers than a traditional ECR-source, such as the AsTeX model 1000 ECR source, for example. Compact ECR-system 25 uses a microwave power for the growth of GaN films in the range of about 10-100 W. This range of microwave power leads to power densities which are approximately equal to those resulting from operating traditional ECR sources in the range of about 100-500 W.
According to another aspect of this invention, an external solenoid may also be used. FIG. 4 depicts an ECR-assisted MBE device 100 with an external solenoid 40 attached thereto. However, ECR-assisted MBE device 100 may be operated without external solenoid 40 or operated with external solenoid 40 having no current. Further, external solenoid 40 may also be used with ECR-source 10 depicted in FIGS. 1 and 3, or other activated nitrogen sources.
External solenoid 40 is a magnetic device designed to induce a magnetic field. Preferably the magnetic field induced by external solenoid 40 is opposite in sign with respect to substrate 19 to that of the magnetic field generated by the ECR source. External solenoid 40 may be powered by a dc power supply (not shown), for example, to induce the desired magnetic field. External solenoid 40 may comprise a plurality of turns of copper magnet wire wound on a mandrel. For example, 2300 turns of 18 gauge enameled copper magnet wire wound on an iron mandrel may be used. The number of turns, type of wire, and construction of the solenoid may be varied. Preferably, external solenoid 40 is powered by a current of about 5-8 amps. Other amperages may also be used, such as from about 0-10 amps.
As depicted in FIG. 4, external solenoid 40 is preferably disposed outside the housing of the high vacuum plasma chamber 15 of MBE system 11. External solenoid 40 is preferably disposed along an axis B, which is preferably disposed at an angle α with respect to an axis A through ECR-system 25. In a preferred embodiment, angle α is about 60�. Other values for angle α may also be used. Additionally, external solenoid 40 is preferably disposed at a reasonable distance from the magnetic coil in the ECR source to avoid unwanted interference in the ECR source. In order for the ECR source to operate properly, a 875 Gauss magnetic field is used. If the external solenoid 40 is too close to the magnetic source in the ECR source, this field may be effected.
In operation, charged species in ECR plasmas are strongly guided along magnetic field lines or, equivalently, down the divergence of the magnetic field by ambipolar diffusion. Thus, the charged nitrogen species travel down the compact ECR-system 25 through the effusion port 12 along the magnetic field lines generated by the ECR magnetic source toward substrate 19. External solenoid 40 alters the direction of the charged species (ionic species) which are produced from compact ECR-system 25. Further, because of the relatively large separation between the external solenoid 40 and the compact ECR-system 25, there is negligible perturbation of the magnetic field inside the ECR-system 25 due to the external solenoid 40 magnetic field. Therefore, the effect on the species generated in the compact ECR-system 25 is negligible.
FIG. 5 depicts the effects of an external solenoid 40 on the direction of the charged species. FIG. 5A shows magnetic field lines produced from an ECR source without use of an external solenoid 40. As this figure shows, the field lines are symmetrically directed toward substrate 19. FIG. 5B shows magnetic field lines produced form an ECR source with an external solenoid 40 in use. The external solenoid 40 serves to divert the field lines away from the substrate area. Therefore, by varying the power and position of external solenoid 40 it is possible to selectively control the amount of and the ratio of ions to excited neutral species and atomic species at the substrate. The use of the external solenoid provides a scalable process. By controlling the effective magnetic current of the external solenoid 40, the ion density at the substrate may be altered. Ion density at the substrate may be important because ions at high energies may cause damage to the growth layer. Therefore, by reducing the mount of ions at the substrate, the likelihood of such damage is correspondingly reduced.
FIG. 6 depicts one example of how varying the magnetic current of the external solenoid 40 relates to relative ion density. By replacing the substrate 19 with the collector of a nude ionization gauge (Bayard-Alpert type) and using it as a Langmuir probe, the relative ion density as a function of the magnetic current of external solenoid 40 may be measured. FIG. 6 illustrates the scalability of the growth process through the variation of the magnetic current of the external solenoid.
FIG. 7 depicts an I-V characteristic of the Langmuir probe used above operated with external solenoid 40 having a current of 7A and without external solenoid 40. This figure illustrates that activation of external solenoid 40 results in the reduction of both electron and ion densities at the substrate 19 surface.
Films grown with the external solenoid 40 have improved surface morphology, and transport and photoluminescence properties. These differences are attributed to the reduced number of ions in the nitrogen plasma. By using an external solenoid 40, substantially higher quality films may be grown. This external solenoid thus provides a simple, effective, and unobtrusive method of extracting and controlling charged species, particularly where energetic anisotropies of the ionic species resulting from magnetic-field effects make biasing schemes difficult to interpret.
In another embodiment of the present invention, high energy ion damage may be reduced through the use of a reduced diameter exit aperture at the exit of the ECR-system. Compact ECR-system 25 may be provided with an exit aperture 42 at its exit as depicted in FIGS. 4 and 8. Exit aperture 42 may be formed from a disc (not shown) having a hole disposed therein. The disc may be placed between the ECR system's liner and a wafer spring, which holds both the liner and the disc in place. The ECR system having the disc at its exit is then placed in effusion port 12. The disc may be made of quartz, for example, and may have a thickness of about 1 mm, for example. Other devices for reducing the diameter of the exit of the ECR system may also be used such as a remotely controlled shutter, for example. By using a remotely controlled device, operation of the exit aperture 42 may be varied during operation.
Exit aperture 42 preferably has a diameter, dca, less than the diameter of the ECR-system 25, dsys, as shown in FIG. 8. For example, the ECR-system diameter, dsys, may be about 2 cm while the diameter, dca, may be varied from about 1 mm to about 1.9 cm, for example, although other diameters may also be used.
By reducing the diameter of the exit of the ECR-system 25, the pressure inside the ECR system 25 is increased. Conversely, increasing the diameter decreases the pressure. Increased pressure promotes collisions between the ions of the plasma. These collisions therefore tend to reduce the energy of the ions and reduce the amount of ionic species which exit the ECR system 25. Any ions that exit the ECR-system 25 have reduced energy and are not as likely to cause damage to the GaN growth layer. If the diameter of the exit aperture 42 is small enough, no ions escape due to a screening effect. The diameter at which "screening" occurs is known as the Debrye screening length. Atomic nitrogen particles, however, pass through this "screen". Atomic nitrogen species are preferred for forming GaN layers.
Controlling the diameter of exit aperture 42 allows control of the amount of ionic species and the ionic energy at the substrate. A smaller hole passes fewer ions and ions with reduced energies. The exit aperture 42 may be used with or without external solenoid 40. Also, the exit aperture 42 may be used with any type of ECR system or other activated nitrogen source to vary the ionic energy directed at the substrate. By using both exit aperture 42 and external solenoid 40, greater flexibility in controlling the growth process can be provided.
FIGS. 9 and 10 depict the effects of using exit aperture 42. FIG. 9 depicts an optical emission spectra for an ECR nitrogen plasma generated by a compact ECR-system 25 operated at 35 W, with a nitrogen pressure of about 1.2�104 Torr without use of an exit aperture. This figure depicts the presence of ionic nitrogen (N2 +) at about 391.4 nm, molecular excited nitrogen (N2 *), and atomic nitrogen (N). The energy of the atomic nitrogen (N), occurring at wavelengths higher than about 650 nm, is relatively small. FIG. 10 depicts an optical emission spectra for an ECR nitrogen plasma generated by a compact ECR-system 25 having a 1 mm diameter exit aperture 42 in the exit aperture, operated at about 30 W. FIG. 10 depicts sharp peaks of atomic nitrogen at about 625 nm and about 670 nm. Further, the peak at about 391.4 nm for ionic nitrogen is reduced relative to the size of the atomic nitrogen peaks. As these figures indicate, the ratio of energetic ionic species to atomic species is reduced through the use of exit aperture 42. Although these figures depict results of ECR systems operated at different power levels, an ECR system operating with an exit aperture at 35 W would create even greater amounts of atomic nitrogen. Therefore, these figures show the increase in output of atomic nitrogen that is created by increasing the pressure in the ECR system through the use of an exit aperture.
The effects of using the exit aperture 42 are also illustrated in FIG. 11. FIG. 11 depicts the ratio of ionic to excited nitrogen species taken for varying sizes of exit aperture 42 and varying rates of nitrogen flow. Excited nitrogen comprises The squares represent a reading for an ECR source operating without an exit aperture. The circles represent readings for an ECR source operating with a 1 cm exit aperture. The triangles represent readings for an ECR source operating with a 1 mm exit aperture. As FIG. 11 illustrates, when the diameter of exit aperture 42 is smaller, relative ionic emission intensity is less, even for different nitrogen flow rates.
The employment of the external solenoid and/or the use of a restricting exit aperture in the ECR-system allows the doping of the GAN n- or p-type without the use of the substrate biasing as discussed with reference to FIG. 3. Doping with an external magnet or an reduced diameter exit aperture may be accomplished by directing a beam of gallium, activated nitrogen, and the proper dopant toward the substrate.
According to the present invention p-n junction devices such as light emitting diodes may be formed using various aspects of the invention described above. One embodiment of a light emitting diode of the present invention is depicted in FIG. 12. In FIG. 12, a light emitting diode 150 has a substrate 100, a buffer layer 102, an n-type layer 104, a p-type layer 106, a p-electrode 108 and an n-electrode 110. Substrate 100 may be (100) or (111) silicon; (0001) (basal plane), (11-20) (a-plane), or (1-102) (r-plane) sapphire; (111) or (100) gallium arsenide; magnesium oxide; zinc oxide; or (6H--) or (3C--) silicon carbide or other materials that would be conveniently used for epitaxial growth of Group III-V nitride devices. Buffer layer 102 is preferably a GaN-buffer having a thickness in the range of about 100 Å to about 1000 Å. A thickness of about 300 Å may be used, for example. As described above the thickness may vary depending on the temperature at which it is deposited.
The n-type layer 104 is epitaxially grown on buffer layer 102 and is preferably a GaN layer. N-type layer 104 is either autodoped or intentionally doped and has a thickness in the range of about 0.5-10 μm. A thickness of about 1.0-3.0 μm may be used, for example. The p-type layer 106 is epitaxially grown on n-type layer 104. P-type layer 106 is preferably a doped GaN p-type layer having a thickness of about 0.3-0.5 μm. A thickness of about 0.5 μm may be used, for example.
In a preferred embodiment, as depicted in FIG. 12, p-type layer 106 and a portion of n-type layer 104 may be etched to expose a top surface of n-type layer 104. N-electrode 110 may be formed on the exposed portion of n-type layer 104 and may comprise titanium and aluminum. Preferably a titanium layer having a thickness of about 200 Å covered by an aluminum layer having a thickness of about 2000 Å may be used. P-electrode 108 may be formed on p-type layer 106. P-electrode 108 may comprise nickel (Ni) and gold (Au). Preferably p-electrode 108 comprises a layer of nickel having a thickness of about 200 Å and then a layer of gold having a thickness of about 2000 Å. P-electrode 108 may also comprise platinum. Preferably, the material used for p-electrode 108 should have a work function of about 7.5 eV. Platinum has the highest work function of any known metal at about 5.8 eV.
In an alternative embodiment, when no etching is performed, p-electrode 108 and n-electrode 110 may be formed on p-type layer 106. P-electrode 108 contacts p-type layer 106 directly, as in FIG. 12. N-electrode 110 contacts n-type layer 104 through p-type layer 106 by soldering with indium metal, for example. Other metals and methods of contacting n-type layer 104 through p-type layer 106 may also be used.
A method of forming light emitting diode 150 will now be described. As described above, a substrate 100 is placed in MBE system 11. If the substrate 100 is sapphire, then the sapphire preferably is subjected to a nitridation process at a high temperature, 850� C. for example, to form atomically smooth AlN. Other methods of preparing the substrate depending on the substrate used may also be used before GaN growth.
Once the substrate is prepared, the temperature in the MBE chamber is set at between about 100� C. and about 550� C. to perform a nucleation step to grow buffer layer 102 to a desired thickness, for example, 300� A. As described above, the temperature is one factor in determining whether the nucleation layer will be amorphous or defective crystalline. A temperature of about 500� C. may be used, for example. At this temperature, the activated nitrogen from an ECR-system and the atomic gallium generated by Knudsen effusion cell 22 are directed at the substrate 100. Preferably, compact ECR-system 25 is used to generate the activated nitrogen. The microwave power of the compact ECR-system 25 effects the type of growth which is induced. FIG. 13 depicts the effect of microwave power on the surface morphology of films. At 25,000 times magnification, FIG. 13(a) depicts the surface of a film grown at 18 W, FIG. 13(b) depicts the surface of a film grown at 20 W, and FIG. 13(c) depicts the surface of a film grown at 25 W. At 18 W, the film has a relatively island-like growth structure. The film grown at 20 W shows a relatively smooth surface typical for layer-by-layer growth. The film grown at 25 W shows a three dimensional growth which leads to rough surface morphologies. A power of about 20 W is preferred to provide smooth layer-by-layer growth as depicted in FIG. 13(b). Other powers may be used, however, depending upon desired parameters. For example, when an exit aperture in the ECR-system and/or the external solenoid is employed, the optimum power in the compact ECR system 25 is between about 30 to about 100 Watts and preferably between about 25-50 Watts.
Then, the substrate is heated gradually at a rate of about 4� C. every fifteen seconds. Other rates of increasing the temperature may also be used depending on the initial quality of the nucleation layer. For example, if the nucleation layer is amorphous, a slower rate of increasing the temperature may be used to ensure that the buffer layer crystallizes. The substrate is heated to the desired high temperature setting to perform one or more growth steps. A temperature in the range of about 600� C. to about 900� C., such as about 800� C., may be used, for example during the growth steps.
Before progressing to the growth step, it is important to determine whether the buffer layer has begun to crystallize. A reflection high-energy electron diffraction (RHEED) apparatus 46 (FIGS. 1, 3 and 4) may be used to monitor the crystallinity of the nucleation layer. For amorphous materials, it may be desirable to maintain the temperature at the high temperature for a period of time, such as at 800� C. for about 30 minutes, for example, before opening the gallium shutter to begin the growth step.
After the desired temperature is established, and the crystallinity of the nucleation layer has reached a desired level, the gallium shutter 23 is opened to begin growth of the n-type layer 104 on the buffer layer 102. The n-type layer 104 is preferably grown to about 1.0-3.0 μm at a deposition rate of about 0.2 μm/hr, for example. As described above, incorporation of n-type impurities may occur by autodoping or by introduction of a donor impurity. A doping level of between 1018 -1019 cm-3 of net carrier doping may be used.
Once the desired thickness of n-type layer 104 is grown, an acceptor dopant is introduced through another effusion cell to form the p-type layer 106 on top of the n-type layer 104. The acceptor dopant may be chosen from zinc, magnesium, beryllium, and calcium, for example. Other acceptor dopants may also be used. To facilitate incorporation of the acceptor dopants, the substrate 100 may be biased. When a reduced diameter exit aperture or an external solenoid are used, however, biasing does not have significant additional benefits to the doping process due to the self-induced substrate biasing which results from the exit aperture and/or the external solenoid.
The Mg-acceptor dopant is preferably sublimated from a conventional knudsen cell at a lower temperature than the temperature of the substrate. A temperature of about 230� C. may be used, for example. During the last few minutes of p-type layer growth, the amount of dopant introduced into the layer may be increased. In one embodiment, this may be performed by raising the temperature of the dopant. A temperature of about 270� C. may be used, for example. Other methods for increasing the doping level of the top surface of the p-type layer 106 may also be used. Once the desired thickness of p-type layer 106 is grown, the gallium shutter 23 and the acceptor source are turned off.
By providing the very top layer of the p-type layer with higher doping levels, the p-electrode contacts the valence band by electron tunnelling during LED operation. This is particular useful where the contacts are made from a metal with a work function less than 7.5 ev. In this situation, the conduction of electrons from p-electrode to the p-type layer occurs by electron tunneling.
After the p-type layer 106 has been formed, the device is subjected to etching to remove a portion of the p-type layer 106 and a portion of the n-type layer 104 as depicted in FIG. 12, for example. In one embodiment, the etching occurs in a ringlike fashion. During etching, the ring may be widened to form a hilltop-like formation known as a mesa. Reactive ion etching may be used, for example to remove the desired portion of the GaN device of the present invention. Particularly, silicon tetrachloride may be used as the etching chemical. Other chlorine based etching methods may also be used, such as use of Freon-12, for example. Bromide and fluoride based etching may also be used.
P-electrode 108 is then formed on p-type layer 106. P-electrode 108 may be formed by evaporation of 300 μm diameter dots of 200 Å of nickel followed by 2000 Å of gold. As noted, platinum may also be used. Other metals, diameters and thicknesses for p-electrode 108 may also be used. N-electrode 110 is then formed on n-type layer 104. N-electrode 110 may be formed by evaporation of a ring around the mesa of 200 Å of titanium followed by 2000 Å of aluminum. A chromium/aluminum ring may also be used. During formation of both p-electrode 108 and n-electrode 106, rapid thermal annealing at relatively high temperatures for a specified duration is preferred to form good ohmic contacts. For example, rapid thermal annealing at about 700� C. for about 20 seconds may be used. In some instances, the n-electrode may be formed, followed by rapid thermal annealing before deposition of the p-electrode.
In another embodiment of a p-n junction device of the present invention, the positions of n-type layer 104 and p-type layer 106 may be reversed. FIG. 14 depicts a light emitting device 160 of the present invention in which p-type layer 106 is grown on the buffer layer 102 and n-type layer 104 is grown on p-type layer 106. As depicted in FIG. 14, in this embodiment, p-type layer 106 may be grown to a thickness of about 2.0 μm and n-type layer 108 may be grown to a thickness of about 0.5 μm. Other thicknesses of these layers may also be used. It is preferred that the bottom doped layer (formed nearest the substrate) be thicker than the other layer. The bottom layer should be less resistive to allow proper conduction across the p-n junction. Because resistivity is related to length and cross-section, the thicker the bottom layer, the less resistive it is, and correspondingly, the better of a p-n junction device it will make.
In this embodiment, part of n-type layer 104 and a portion of p-type layer 106 may be removed by etching. N-electrode 110 then is deposited directly on n-type layer 104 and p-electrode 108 is deposited directly on p-type layer 106.
In yet another method of forming electrodes 108 and 110, the substrate 100 and buffer layer 102 may be etched to expose the bottom layer, whether it is the n-type layer or the p-type layer. The corresponding electrode may then be formed on the bottom layer of the device.
According to another embodiment of the present invention, an n-type GaN substrate may be used for substrate 100. In this embodiment, an n-type GaN layer 104 may be grown directly on the GaN substrate using a single growth step. P-type layer 106 may then be grown on n-type layer 104. P-type layer 106 could also be grown directly on the GaN substrate with the n-type layer 104 grown on p-type layer 106. Such a structure is an n-p-n bipolar junction transistor. This embodiment may be used in combination with the other structures and methods described except that as noted, a buffer layer is not necessary. However, if desired, one could be used.
In another embodiment, a hot tungsten filament or an ion source such as a Kauffman ion source may be used to supply the activated nitrogen. An ion source directs ions in a desired direction. Therefore, unlike the ECR source, no magnetic lines are needed to direct the ions. In these methods, it may be desirable to bias the substrate positively or negatively to facilitate the p-and n-type growth respectively,, as discussed with respect to FIG. 3.
The devices described above may be used to form light emitting diodes or lasers. Advantageously, the use of GaN layers in a p-n junction device omits blueviolet light. These devices may be used for a variety of purposes including full color displays, optical recording devices, laser printing, and underwater communication, to name just a few. These devices may also be used to provide semiconductor laser devices.
One example of a light emitting diode having a p-n junction according to the present invention is described below. This example is not intended to limit the invention.
A (0001) sapphire substrate was first subjected to a nitridation process at 850� C. to convert its surface to atomically smooth AlN. Next, a GaN-buffer approximately 300 Å thick was deposited at about 500� C. Following the deposition of the GaN-buffer, the substage was heated to about 800� C. and an autodoped n-type GaN film approximately 2 μm was deposited at a deposition rate of 0.2 μm/hr. Then, a Mg-doped p-layer approximately 0.5 μm thick was deposited by incorporating Mg which was sublimated from a conventional Knudsen cell at 230� C. The Mg flux was then gradually raised by about an order of magnitude by increasing the cell temperature to about 270� C. near the end of the run to facilitate the electrical contacting of the top p-layer. The device was grown with a reduced diameter aperture of about 1 cm at the exit of the ECR source.
The top p-layer was electrically contacted by thermal evaporation of 300 μm diameter dots of 200 Å of nickel followed by 2000 Å of gold. The bottom n-layer was contacted through the p-layer be soldering with indium metal. For testing purposes, the chip was then mounted in a chip carrier with silver paint and connected with an ultrasonic wire bonder.
A second device was grown using the above procedure additionally using an external solenoid operating at a magnet current of about 7 amps.
The n-type layers had a carrier concentration of about 5�1018 cm-3 and electron mobilities of about 80 cm2 Vs. The p-type layers had a net carrier concentration of 5�1017 cm-3 and a hole mobility of 6 cm2 /Vs. The I-V characteristics of the devices indicated a turn on voltage of around 3 volts.
The devices' emission spectra were measured by dispersing the light through a spectrometer and detecting it with a photomultiplier. The devices were driven with a pulse generator at about 40 Hz and a 10% duty cycle to facilitate locked-in measurements. The spectra were measured at a drive current of about 150 mA or a current density of about 212 A/cm2.
The EL spectra for the above devices were measured after immersing the chip in liquid nitrogen at about 77K. FIG. 15 depicts the results of the EL spectra measurements. Curve (a) represents the EL spectra of a device fabricated from layers grown without external solenoid 40 and curve (b) represents the EL spectra of a device fabricated from layers grown with external solenoid 40 driven at about 7 amps. The peak emission at about 430 nm is characteristic of Mg-doped GaN homojunction LED's. This peak is in the violet part of the spectrum. By using external solenoid 40 to minimize ion damage in the film, a reduction in this tail as well as an enhancement of the peak at about 430 nm is achieved resulting in a bluish-violet apparent color.
A GaN blue-violet light emitting p-n junction has thus been grown by MBE. These devices do not require a post-growth thermal annealing or LEEBI treatment step to activate the Mg acceptors in the p-layer. Blue emissions characteristic of Mg luminescence centers are observed.
An LED device was grown using a procedure as set out in Example 1 with an external solenoid. Instead of placing the contacts on the p-type layer, reactive ion etching was performed to expose the underlying n-type layer. A p-electrode and an n-electrode were then formed on the p-type layer and the n-type layer, respectively, followed by rapid thermal annealing of the metal contacts as described above. Results
The I-V characteristics of a device as described in Example 2 are illustrated in FIG. 16. The device of Example 2 exhibits excellent I-V characteristics with a turn on voltage of about 3 volts.
While this invention has been described with reference to specific embodiments, it is not intended that the invention been limited thereto. The invention is only limited by the claims which follow.
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text: http://serverfault.com – I have installed elasticsearch @ debian6 by this tutorial. I have set up my system max open files directives so i have these values: # su # cat /proc/sys/fs/file-max 70000 # ulimit -Hn 64000 # ulimit -Sn 32000 When i check elasticsearch max_file_descriptors by: curl -XGET 'http://localhost:9200/_nodes?process=true&pretty=true' i'll get 1024. When i restart it by root user, it has "max_file_descriptors" : 64000 now. Whats wrong with that init.d autostart? When i check htop, elastic autostarted by init.d with that 1024 descriptors is runnig under root user too. (HowTos)


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Ben Derudder is Professor of Human Geography at the Department of Geography, and Associate Director of the Globalization and World Cities research group and network (GaWC). His research focuses on (i) the conceptualization and empirical analysis of transnational urban networks, (ii) the (persisting) importance of business travel in the space economy, and (iii) spatial modelling techniques. He teaches courses on human geography, global city-formation, and methods and techniques in geographical research.
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Google's executive chairman Eric Schmidt has gone on the offensive and bashed Apple over patent infringement claims the company had filed against high-profile Android backers such HTC and Samsung. In what could be viewed as an effort to sway the public perception, he launched a nasty attack speaking at Google's Mobile Revolution conference in Tokyo. To Schmidt, Apple's taking rivals to court sends a strong signal, that of the lack of innovation and jealousy:
The big news in the past year has been the explosion of Google Android handsets and this means our competitors are responding. Because they are not responding with innovation, they're responding with lawsuits. We have not done anything wrong and these lawsuits are just inspired by our success.
Schmidt re-iterated sales of 135 million Android phones since 2008 and highlighted more than 550,000 daily activations that exclude tablets and non-smartphone devices, which is up from 400,000 a day in May. He said Google will support HTC's legal battle against Apple's copyright accusations, but wouldn't elaborate.
Whether or not Apple's legal pressure stems from jealousy is up for debate, of course. Cynics might argue Schmidt's comment draws from nervousness on Google's part because Android backers are increasingly discovering hidden costs as Microsoft and Apple emerge as holders of patents crucial to Google's mobile operating system. Apple's victory over HTC may set what RBC Capital Markets analyst Mike Abramsky painted as a high royalty precedent for Android devices that could further shrink the already slim margins on Android phones.
As if that wasn't enough, Microsoft is already taking money from five Android vendors for patent protection, including HTC which is said to pay five bucks each time it ships an Android handset and General Dynamics Itronix. Microsoft is also understood to have targeted Samsung, seeking royalties in excess of hundreds of millions of dollars annually. The Cupertino, California-headquartered gadget giant quoted Steve Jobs in a statement announcing the HTC lawsuit March last year:
Then Google CEO Eric Schmidt shares the stage with Steve Jobs at the January 2007 iPhone unveiling. The times of happiness would abruptly come to an end amid Android whispers, culminating with Apple announcing Schmidt's resignation from its board August 3, 2009.
We can sit by and watch competitors steal our patented inventions, or we can do something about it. We've decided to do something about it. We think competition is healthy, but competitors should create their own original technology, not steal ours.
Legal wrangling between Apple and HTC took an interesting twist when the International Trade Commission (ITC) ruled last Friday in favor of Apple. ITC, an organization empowered to resolve trade disputes and ban imports of infringing products into the United States, found out HTC violated two of Apple's patents related to iPhone technologies, US Patent Nos. 5946647 and 6343263. The agency commissioners will decide upon the ruling later this year. Meanwhile, investors sent HTC shares down nearly seven percent fearing that Apple will seek to put an import ban on Android-driven HTC phones sold in America.
Cross-posted on 9to5Mac.com
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4 Responses to "Schmidt: Apple is jealous of Android's success, that's why they're suing"
Yeah Apple was innovative when they INTRODUCED the iPhone to the world but since then what have they created?
Android was the first to have Video Chat and along with that its Video Chat has no Wifi Restrictions (HTC EVO) and soon after that was release of the iPhone 4. Android devices have higher quality cameras and introduced dual core technology to the mobile phone world. Android phones are the first mobile platform with 4G. I don't mean to sound like a fanboy but its the facts. Apple has been slacking with innovation lately when it comes to their mobile platform. Google is taking the smarter approach to their mobile product which is allow people to hack (jailbreak or root whatever you want to call it) their phones and whatever is a smart idea for the platform they implement it into their mobile platform as Apple is just now about to get features that Android has had since day one. Once again yes Apple is the holder to many firsts but so is Android. Fanboys shouldn't comment on stuff like this because everytime they do its only from the perspective they have seen so far. Most Apple fanboys have only used a low end android phone and placed their judgement on the Android OS as a whole just because of that bad experience (You get what you pay for) and Android Fanboys don't want to admit that Apple is the reason the Android platform exists because of the innovation they created which is the iPhone.
Apple hasn't been innovative since they introduced the iPhone. The raise up and sue anytime a real contender steps forward. Fisher Price OS in 201, innovative indeed lol
hahaha.. joke of the century.. Schmidt must be drunk.. Apple not innovative and stealing from G? lol
"The big news in the past year has been the explosion of Google Android handsets and this means our competitors are responding. Because they are not responding with innovation, they're responding with lawsuits. We have not done anything wrong and these lawsuits are just inspired by our success."
I lol'd. Google entered the mobile market like 2 years after Apple changed the industry with the iPhone? Very innovative indeed.


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Grey's Anatomy
Spoiler: Upcoming Fight Between Owen and Meredith
Uh oh. While Cristina and Derek are strangely becoming BFFs, Owen and Meredith squabble in their spouses' absence. In the episode where Derek will take Cristina on a fishing trip to give her a little escape from the hospital, Owen and Meredith disagree on what's best for Dr. Yang. "Owen's attitude is that he has to give her space in order for her to find her way back [to the hospital]," says Kevin McKidd. This leaves Meredith up in arms, since she wants Cristina back at Seattle Grace ASAP. "Owen and Meredith really have a battle of wills during this whole thing," McKidd adds.
Well, Mer, considering Cristina hates you now, maybe you should back off and let the boys give it a shot, hmm? Harsh, we know, but just saying...
Source: Digital Spy
Spoiler: Derek and Christina's Upcoming Fishing Getaway


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never the less i updated the wrapper if someone doesn't want to bother with signing applications. but this solution is slower and doesn't work for all applications.
just install. no need for manual dll copying. (if you installed the old wrapper please uninstall it before upgrading and remove all manually copied gx.dll)
http://picard.exceed...90/gapi2gdi.exe with installer
http://picard.exceed...90/gapi2gdi.cab only cab
http://picard.exceed...90/gapi2gdi.zip source
ps: word definitions:
GDI http://msdn.microsof...e_interface.asp
GAPI http://msdn.microsof...htm/gx_bvrh.asp
Edited by picard_beta, 03 January 2005 - 07:14 PM.


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Moderator: Regulators
bigdaddyscott wrote:don't reply to pm's sir??? i sent one!
scarlet_magpie wrote:Flawpunk, seeing as you never got that moon knight from me, If i dig out a Wolverine you are happy with, can i replace MK with that?
yamivash 0 wrote:thread merge dude
flawpunk wrote:yamivash 0 wrote:thread merge dude
eh, forgot about that when i made it. oops
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ABC Tickets
One of the more popular new wave bands of the early '80s, the British group ABC built upon the detached, synthesized R&B pop of David Bowie and Roxy Music, adding a self-conscious, campy sense of theatrics and style. Under the direction of vocalist Martin Fry, the group scored several catchy, synth-driven dance-pop hits in the early '80s, including "Poison Arrow," "Look of Love," and "Be Near Me."
Following the release of Up, Martin Fry took an extended break from the music industry, returning in 1997 with a revamped ABC and a new album, Skyscraping, which was only released in the U.K. Shortly before ABC's comeback, England experienced a short-lived new romantic revival called Romo, which increased Fry's exposure substantially, in turn helping Skyscraping to earn good reviews and respectable sales.
Hot Concert Tickets
Barry Manilow tickets - Beyonce tickets - Blue Man Group tickets - Bon Jovi tickets -


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Privacy and Cookies
Bombardier Aerospace has taken integrated avionics to a higher plane with the introduction at NBAA this afternoon of the Global Vision flightdeck for the Global 5000 and Global Express XRS ultra-long-range business jets.
The system will feature the Rockwell Collins Pro Line 21 Fusion, the avionics maker's next generation Pro Line 21 platform, in a panel and "flight environment" created by Design Q, design consultants.
Launch customer London Air Services, based in Vancouver, Canada, will install the system in a new Global Express XRS set for delivery in 2011. London Air owns a fleet of Bombardier business jets as well as several AgustaWestland AW139 executive helicopters. Bombardier expects to certificate Global Vision in the third quarter of 2010 and enter service in 2011.
"We can't wait to fly it," says Wynne Powell, London Air Services' president.
Perhaps the most impressive element of Vision will be Pro Line 21 Fusion, a package that will provide pilots with new levels of situational awareness and enhanced decision-making tools. Included will be four 15in (380mm) high-resolution active matrix liquid crystal displays and the Collins Head-up Guidance System, with flightpath guidance and energy management tools.
The cockpit – a replica is being unveiled at the static park this evening – will showcase the first operational application of synthetic vision fused with infrared-based enhanced vision on the same primary flight display.
Collins is developing the synthetic vision system, which provides a computer-generated image of the environment from a terrain and obstacle database. The enhanced vision system is CMC Electronics' SureSight i-Series. Gulfstream and Honeywell are working on a similar synthetic and enhanced vision system package for executive aircraft, although the information is not being fused.
Also significant will be the addition of the Collins RTA-4100 MultiScan weather radar technology, a feature now available only to the airline market. The radar provides a 300nm (555km) look-ahead capability, automatic operations and turbulence detection and alerting capability out to 40nm. Collins says Fusion will also include a more intuitive interface to the pilot, with information windows, phase-of-flight sensitive data, including checklists and charts that automatically update, and voice recognition.
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The Queen of controversy Rakhi Sawant who has vanished somewhere since her last appearance in a reality show has commented about the Shahrukh Khan's third baby through surrogacy topic! Though Shahrukh earlier said that this matter is 'personal and confidential' to him, Rakhi is extravagantly outspoken about the huge news.
She said, "So many people have gone in for surrogacy. Even Aamir Khan has a surrogate child. I am proud of SRK, I salute him for this decision. It's a big thing. The couple must be having a personal problem that is why they opted for surrogacy."
If that wasn't enough, she took a swing at the third khan, Salman Khan too!
She said, "I think even Salman Khan should go for surrogacy. He hasn't got his true love. He got it once and lost her. But if he doesn't want to marry ever, then this is the best way to still get a child."She further added, "If I don't marry ever, even I will become a surrogate mother."
Rakhi Sawant who's very well known for her motor-mouth is back in the news again and let's see if Salman actually takes her comments seriously unlike us!


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Vista Sol Buenos Aires Design Hotel Rating: 4.0 Pearls
Vista Sol is one of the best-priced four-pearl options in bustling Microcentro. It's a simple, modern property almost feels more like a complex of urban studio apartments than a mid-size, mid-price hotel. The standard rooms are small, but the sophisticated, minimalistic design leaves a surprising amount of useful space. The hotel has little more than a small fitness center and sauna, plus a basic restaurant, but it is clean and centrally located to tourist attractions and the city's business center. Overall it's a great value -- in this city, it's easy to pay a lot more for a lot less.
Lennox Hotel Buenos Aires Rating: 4.5 Pearls
The 57-room Lennox Hotel Buenos Aires, located near the city's government offices, is one of the city's top luxury hotels, but its reasonable prices make it a superb value as well. Quirky decorations and artwork, interesting wall patterns, and unusual color schemes make a stay here a distinct and memorable experience -- from the spacious lobby dressed in sleek shades of black, to the chic, dramatically lit private outdoor garden. All aesthetics aside, the hotel also offers top-notch comfort, luxury, and hospitality. There's a restaurant serving international dishes using local ingredients, a free breakfast buffet with fresh fruits and hot eggs, and a spa for relaxation. And the rooms -- large and stylishly furnished like the rest of the property -- come with kitchenettes, big closets, iPod docks, and quaint dining areas.
Be Hotel Buenos Aires Rating: 4.0 Pearls
The Axel is a cosmopolitan hotel with reasonable rates located in San Telmo, a bohemian neighborhood in central Buenos Aires. It has 48 contemporary rooms with plush king beds, glass-enclosed bathrooms, and up-to-date amenities, such as flat-screen plasma TVs and iPod speakers. The rooftop pool with outdoor shower, the stunning spa, and the rooftop lounge are definitely the highlights of this hotel. Just make sure you get a room facing the pool area, and expect to see some minor wear and tear throughout the property.
Blue Soho Hotel Rating: 4.0 Pearls
The Blue Soho feels refreshing and boutique-y, with exposed brick walls, high ceilings with skylights, and even fresh flowers and palms. It's one of the better-priced options in happening Palermo Soho, and it has a great location on a street with various trendy shops and restaurants. Rooms exude a distinct urban, contemporary style, though some are dark and lacking natural light. Bathrooms are also modern, but sometimes positioned in awkward places -- in some rooms, the bathroom area isn't even closed off from the sleeping area. But for the price, it's a solid value option.
Savoy Hotel Rating: 4.0 Pearls
This gorgeous, stately building resides in the city's financial and political center, just minutes away from Congress and presidential offices. What sets the Savoy apart from other hotels is its classic appearance combined with modern flair. The shiny marble lobby features high ceilings, accentuated by a bright red chandelier and plush red chairs. The stunning lobby bar showcases tall pillars with ornate gold details and crystal chandeliers. The hotel's rooms are contemporary, with wood floors, dramatic headboards, and bold pops of color (though some units, such as the Corner Suite, have classic decor). Each room offers clean, contemporary bathrooms with walk-in showers and rainfall fixtures. The Savoy welcomes all kinds of guests, but it's particularly popular with couples and business travelers (who can make use of the 10 meeting rooms on the property). Prices are very fair for what you get.


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About WILPF Donate Issue Committees International WILPF Get Involved Publications and eNews Branch Directory
Likud forecasts Sharon victory
from ynetnews.com
Survey polling Likud members published in Yedioth Ahronoth shows 53 percent believe Ariel Sharon will win the elections; only 23 percent think Likud's candidate will be the next prime minister
Sima Kadmon
Published: 12.02.05, 09:52
Less than two weeks have passed since Prime Minister Ariel Sharon decided to abandon Likud and form a new party and day by day the prevailing feeling among Israelis is that the former general will sweep to victory in the general elections slated for March 28.
The picture is not as rosy however for the party that Sharon abandoned as poll after poll point to a crushing defeat for Likud. As Likud
hopefuls prepare for the primaries battle to inherit Sharon's throne, Likud members have little faith their party will do well in the elections.
A poll published Friday in Israel's leading newspaper Yedioth Ahronoth showed 53 percent of Likud members believe the man who betrayed them, Ariel Sharon, will be Israel's next prime minister, in comparison to a dim 25 percent who said whoever wins the Likud primaries will lead the party to victory.
As Sharon and his aides consume the dividends of the prime minister's latest political adventure which received a boost on Wednesday with veteran Shimon Peres announcing his departure from Labor to support Sharon's Kadima faction, back in the Likud the atmosphere is heating up as members lick their wounds in preparations for the primaries.
The accusation finger for Likud's failure to remain united is clearly pointed to Sharon: 50 percent of Likud members polled in the Yedioth-Dahaf survey blamed the prime minister for the split as opposed to 23 percent who blamed the Likud rebels, and 17 percent accused Sharon's archrival former prime minister Benjamin Netanyahu for their party's misery.
Netanyahu, Defense Minister Shaul Mofaz and Foreign Minister Silvan Shalom are the three main candidates who will be battling it out in the Likud primaries set for December 19.
Netanyahu is the favorite to succeed Sharon among Likud members as 39 percent of respondents supported the former prime minister and finance minister, as opposed to 21 percent support for Mofaz and 14 percent for Shalom.


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Teen Maze 2014
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Being confronted with choices that could affect their entire lives can be a transformative experience for middle school students. KSJD's Tom Yoder talks with Peggy Tennyson from the School Community Youth Collaborative and Mikkel Waltman, a senior at Montezuma-Cortez High School about the Teen Maze, an interactive event showcasing possible outcomes of risky behaviors for local youth.
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The best thing about the products we use is what we leave out.
At Canova Studio a different approach is taken to beauty. Say no to harsh chemicals and say yes to a toxin-free hair studio. All products used and retailed are made with natural and organic ingredients. Not only are our products better for you they are better for our planet.
Experience the difference.
Order Our Organic Products Here


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Faces of the Boom: Pastor's street ministry helps newcomers to North Dakota
June 22, 2013 in The Dickinson Press
WILLISTON The Rev. Larry Duffy is bringing his ministry to the streets of Williston. Duffy, an ordained minister who is originally from Ontario, Canada, relocated to Williston and uses his van to bring free sandwiches, coffee and spiritual guidance to people in need. Continue Reading


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Doug McMillon was named the new chief executive officer of Walmart, the world's largest retailer. He starts in February. Jonathan Fickies
The UpTake: Doug McMillon, who will be the new chief executive officer of Walmart, shows that putting down roots in one company, even the largest retailer in the world, can pay off.
Walmart has a new chief executive officer and it didn't cast a wide net to find him. He's company veteran Doug McMillon, 47, who takes the reins from Mike Duke on February 1.
McMillon, whose first job with Walmart (NYSE: WMT) involved unpacking trucks at a distribution center as a teenager in 1984, returned to the company while pursuing his MBA in 1990. He was most recently the president and CEO of Walmart International. In between, McMillon held different positions in merchandising in the United States, and was also president and CEO of the Sam's Club warehouse division from 2006 to 2009.
Walmart has always selected an insider for the top job, and in this case, the position was reportedly a toss-up between McMillon and Bill Simon, 53, who runs the U.S. operation. So how did McMillon win out? Rob Walton, chairman of Walmart's board of directors, described him as a leader and a big-picture thinker in a statement today. "He has broad experience—with successful senior leadership roles in all of Walmart's business segments—and a deep understanding of the economic, social and technological trends shaping our world."
It's clear that he thinks McMillon stands out, upstart style. Here's why:
The charm offensive: A native of Arkansas (where Walmart is headquartered), McMillon is known for his charm, and for what MarketWatch called "photogenic boyish looks." Perhaps most importantly, though, he is said to be friendly with the Walton family. Personality matters, because Walmart has suffered some bad PR of late. As Bloomberg News reported earlier this year, the retail giant alienated some shoppers stateside because it doesn't have enough workers to keep shelves adequately stocked . It was a charge that the company said was "inaccurate," but it certainly made the brand look bad. Workers, meanwhile, have been protesting Walmart's low wages and the company recently made headlines for setting out food bins in stores to collect donations for its own workers who couldn't afford Thanksgiving dinner. You would think as someone who unpacked trucks at one point—albeit almost 30 years ago—McMillon might improve relations with workers if for no other reason than that it would help improve the company's image. These associates —who will be hauling themselves to work at 6 p.m. on Thanksgiving Day, two hours earlier than last year—are the face of the company, and in the eyes of the public, how they are treated matters.
After getting an MA in journalism from Syracuse University, Teresa worked as a general assignment newspaper reporter—general on purpose because besides the usual city hall and police articles, there was the chance to fly an F-18 with the Blue Angels and tag along with bounty hunters on a stakeout—all good preparation for covering entrepreneurs.
If you are commenting using a Facebook account, your profile information may be displayed with your comment depending on your privacy settings. By leaving the 'Post to Facebook' box selected, your comment will be published to your Facebook profile in addition to the space below.
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Art History
Four Art History courses are offered through the art department. Three of these courses (AR 364, 365, and 366) are survey-based and cover art produced from ancient times up to the late 20th century. A fourth course (AR367)examines art work produced by women artists. In all art history coursework, students are exposed to a wide variety of imagery which embody numerous cross-cultural contexts. In each course, students are required to research relevant art historical topics in the form of written papers or through intensive studio projects. With the completion of all coursework, students recognize the universal development of art production in varying time and cultural contexts as well as understand the value of studying art as it relates to their own studio development.


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Win Your Tickets To See Fantasia And Joe at the Tuscaloosa Amphitheater
Everybody knows that I love Fantasia. When I heard her on American Idol I knew she was destined to be a superstar.
"I Believe" is still my favorite song by Fantasia. I have seen her perform a couple of times and she is great. No one


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Wichita Falls Fire Fighters are out collecting donations in their boots for the Muscular Dystrophy Association.
The Wichita Falls Fire Department had a busy morning fighting two fires early Thursday.
An old Wichita Falls church is damaged by flames early Tuesday morning.
A Dallas firefighter died Monday night after he fell about 40 feet from an icy overpass onto a bridge below.
Wichita Falls firefighters battled an early Thursday morning blaze that fully engulfed a house.
Fighting fires is no easy task and that job becomes even more challenging as we get closer to stage 4 water restrictions.
A fire sparks in the attic of a Wichita Falls home.
Wichita Falls firefighters need your helping filling the boot for MDA.


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Roseville, CA (PRWEB) February 12, 2014
Valentine's Day is Friday, and the American Express Spending & Saving Tracker is predicting that the average consumer celebrating the holiday this year will spend approximately $213.00 on loved ones. So much for the saying "love don't cost a thing." If $213 isn't in the budget this year for cards, candy and dinner out, here's some good news my thrifty Valentine; Thrift Town has some unique and inexpensive ways to spread the love, and keep money in the bank.
The below Valentine gift ideas are all under $10 each, proving one doesn't have to spend a fortune to make someone feel special.
For more inspiration, check out Thrift Town's blog at Thrifttown.com/blog or their Thrifty Valentine Pinterest board. Thrift Town is social and can be found not only on Pinterest, but also on Facebook/Thrifttown, twitter @thrifttown, instagram, Tumblr. To see how much we love our VIP's sign up today by clicking here, or via our iPhone app and receive a special VIP Valentine's Day surprise via email.
Thrift Town has 14 award-winning store locations in four western states. Thrift Town lives it's vision statement of being committed to making a difference every day and has helped raise over $250-million dollars for their charity partners. Their clean, bright, and organized stores put out 4,000 gently used products daily to each store location, setting them apart in the thrift world as the premier thrift destination. Thrift Town is owned and operated by Norquist Salvage Corporation, which has spent over four decades dedicated to socially responsible recycling.


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Recent Posts
warrior relentless gloves..mustache - 08-04-2011
I want to say this has somthing to do with Ken Clausen. He has a tattoo of a mustache on his index finger. i know why
warrior relentless gloves..mustache - 08-03-2011
soo is it just me or did warrior make the mustache on the pointer finger of the gloves upside down......... oh dear..
Clutch X twins - 04-07-2011
ain't that a beaut look familiar eh?
Clutch X Superlight, Full pocket - 04-06-2011
looks like a mess to me, sidewalls are bunches and there is no definition. check out my clutch superlight on my latest p
Clutch X twins - 04-05-2011
Damn man, just copied your pattern - looks great on my Brine Bluerint yeah I love it, and the blueprint is a lot like
Fitted vs. Snapback - 04-05-2011
SNAPBACK ftw. Everyone wears the fitted caps including their 4 year old brother.


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| cleoforever
Reviews: 1
I rescued sick and abandoned dogs and cats for 10 years and had to put down a healty beloved pet because he attacked my grandson. Pepper came into this world in my home.
I loved Pepper and this was a very hard decision for me to make but i didn't go out and put it on TV for everyone to see me playing with my precious Pepper then digging a grave for him before Dr. Pol came to my house to put him to sleep.
That really dicussed me by showing the sweet dog playing with the idiot who knew he would have to put the dog down. I saw the idiot dig a hole for his beloved pet. When I saw that I yelled and said "what kind of a person does this on television and Dr. Pol's is making part of his show on this.
What kind of people do you think watch this program.
Why go to such extreme to show a precious pets last days on earth the way it was shone.
I think the idiot (man) was on TV and on Dr. Pol's show and the heck with the emotional part. To show the world you are digging a hole for your "beloved pet"? What were you going to do after Dr. Pol left--throw it in a plastic bag and throw dirt over it. I turned to another station when i saw him digging a hole for his dog.
I will never look at another Dr. Pol's show.
There is no way i would have done that. People who really love there pet and know they have to put it down for some reason , they do not want an audience.
Review posted on Sunday, February 10th 2013 at 8:06 pm


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University Library Room Reservation Systems is managed by the Client Support Team and is comprised of Event Coordinators who assist with room reservation requests and planning events. Listed below this page are Room Policies for UL Event Management space. We ask that Faculty/Staff/Student Organization Representatives carefully review our policies and procedures for the rooms. Fees may be incurred if policies are violated.
Overview of Class & Conference rooms
UL Event Management Office Hours
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Student Organization Representatives who wish to reserve Conference/Class/Meeting space must fill out the Room Reservation Request Form.
Only the current President and 2 selected delegates can reserve space. In order to be eligible to reserve space, please see the Student Organzation Authorization Form listed below. This must be filled out and emailed in a scanned, PDF format to email@example.com, or turned into UL 4135K.
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We are very interested in feedback from you.
Click Here: To submit any feedback to better improve our system. Click "EMS Room Reservation" when you go to the Comments page. Thank you.
|Stud Org Authorization Form.pdf
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Last updated by rtknapp on 04/16/2014