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Great Quotes from Rick Warren's Book, " The Purpose Driven Life"
"Familiarity breeds complacency."
"We are the product of our past but we dont have to be prisoners of it."
"Experience is not what happens to you. It is what you do with what happens to you. Don't waste your pain; use it to help others."
"Resentment always hurts you more than it does the person you resent. While your offender has probably forgotten the offense and gone on with life, you continue to stew in your pain, perpetuating the past. Listen: those who hurt you in the past cannot continue to hurt you now unless you hold on to the pain through resentment. Your past is past! Nothing will change it. You are only hurting yourself with your bitterness. For your own sake, learn from it, and then let it go."
"Other people are going to find healing in your wounds. Your greatest life messages and your most effective ministry will come out of your deepest hurts."
"Time is your most precious gift because you only have a set amount of it. You can make more money, but you can't make more time. When you give someone your time, you are giving them a portion of your life that you'll never get back. Your time is your life. That is why the greatest gift you can give someone is your time. It is not enough to just say relationships are important; we must prove it by investing time in them. Words alone are worthless. "My children, our love should not be just words and talk; it must be true love, which shows itself in action." Relationships take time and effort, and the best way to spell love is
"The only really happy people are those who have learned how to serve."
"Life is a gift…
Life is a test…
Life is temporary assignment…."
"If you have felt hopeless, hold on! Wonderful changes are going to happen in your life as you begin to live it on purpose."
"Life minus love equals zero."
"It's not what you do, but how much love you put into it that matters."
"Why is this happening to me? Why am I having such a difficult time? One answer is that life is supposed to be difficult! It's what enables us to grow. Remember, earth is not heaven!"
"Humility is not thinking less of yourself; it is thinking of yourself less. Humility is thinking more of others. Humble people are so focused on serving others, they don't think of themselves."
"The truth is, almost everything we do is done poorly when we first start doing it – that's how we learn."
"The purpose of life is far greater than your own personal fulfillment, your peace of mind, or even your happiness. It's far greater than your family, your career, or even your wildest dreams and ambitions."
"…life is about letting God use you for his purposes, not your using him for your own purpose."
"The easiest way to discover the purpose of an invention is to ask the creator of it. The same is true of discovering your life's purpose: Ask God."
"God has not left us in the dark to wonder and guess. He has clearly revealed his five purposes for our lives through the Bible. It is our owner's manual, explaining why we are alive, how life works, what to avoid, and what to expect in the future."
"You discover your identity and purpose through a relationship with Jesus Christ."The purpose of your life fits into a much larger, cosmic purpose that God has designed for eternity."
"Listen: Those who have hurt you in the past cannot continue to hurt you now unless you hold on to the pain through resentment. Your past is past! Nothing will change it. You are only hurting yourself with your bitterness. For your own sake, learn from it, and then let it go."
"Fear is a self-imposed prison that will keep you from becoming what God intends for you to be. You must move against it with the weapons of faith and love."
"Without a purpose, life is a motion without meaning, activity without direction, and events without reason. Without a purpose, life is trivial, petty, and pointless."
"The greatest tragedy is not death, but life without purpose."
"Your purpose becomes the standard you use to evaluate which activities are essential and which aren't. You simply ask, "Does this activity help me fulfill one of God's purposes for my life?"
"Without a clear purpose you have no foundation on which you base decisions, allocate your time, and use your resources. You will tend to make choices based on circumstances, pressures, and your mood at the moment."
"It is impossible to do everything people want you to do. You have just enough time to do God's will. If you can't get it all done, it means you're trying to do more than God intended for you to do."
"Purpose-driven life leads to a simpler lifestyle and a saner schedule."
"If you want your life to have impact, focus it! Stop dabbling. Stop trying to do it all. Do less. Prune away even good activities and do only that which matters most. Never confuse activity with productivity. You can be busy without a purpose, but what's the point?"
"It is usually meaningless work, not overwork that wears us down, saps our strength, and robs our joy."
"You weren't put on earth to be remembered. You were put here to prepare for eternity."
"God won't ask about your religious background or doctrinal views. The only thing that will matter is, did you accept what Jesus did for you and did you learn to love and trust him? What did you do with what I gave you? What did you do with your life – your gifts, talents, opportunities, energy, relationships, and resources God gave you? Did you spend them on yourself, or did you use them for the purposes God made for you?"
"When you fully comprehend that there is more to life than just here and now, and you realize that life is just preparation for eternity, you will begin to live differently. You will start living in light of eternity, and that will color how you handle every relationship, task, and circumstance… The closer you live to God the smaller everything else appears."
Hello King Rick Warren! I heart your book. I hope to meet you in person before our Lord Jesus Christ return.-Marianne...
Great Quotes from Rick Warren's Book, " The Purpose Driven Life" "Familiarity breeds complacency." "We are the product...
I want to start reading my PDL~ >
I read this book in my early 20s. It's finally come to full circle after a decade. Love it.
"Experience is not what happens to you. It is what you do with what happens to you. Don't waste your pain; use it to...


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A 70-year-old man is found unconscious in a pool early Tuesday morning at the 4500 block of State Highway 53.
The 911 operator was told by the caller that the victim's wife was with him when the victim fell into the pool and was face down in the pool unconscious.
When Bell County Sheriff's Office Deputies and other emergency units arrived, they transported the victim to Scott & White Hospital by ambulance.
The condition of the victim is unknown at this time, and the Bell County Sheriff's Office is investigating the incident.
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MAD Soul Soup
Food For Thought
MAD thumb rule – Life is Beautiful …LIVE IT!!!!
MAD tip 3 ÔÇôHealthy v/s Unhealthy┬á
I read an article on how many of us have or rather choose for a healthy breakfast option to start our dayÔǪ The result made me write and share with you┬áon this particular important topic which we generally tend to be ignored.
Morning starts with a hectic schedule ahead, where our corporate job is waiting for us with loads of activities to do during the day you getting ready for work and your mind is already super active and mind has reached office much before you also because mentally you already have reached office, Your thoughts Boss calling in his cabin, team meetings, reviews, MIS to be sent. What happens to us is really we also dont know we all get ready and ignore our breakfast thinking will have something on the way or when reach office the choices we have are mainly muffins, pastries, patties, burger, wafers, cheese toasts etc.
Unfortunately, when it comes to being healthy, none of these options is a great way to start your day. Either we donÔÇÖt have time for breakfast, or we donÔÇÖt have many healthy options. So both the scenarios are really dangerous of our health, and if we donÔÇÖt have time for breakfast means we starting our day empty stomach which means that by the time you are getting into the swing of work, your blood-sugar levels are dangerously low. The result: you need an instant sugar fix, which usually means a pastry or some other unhealthy choice.
Secondly if we donÔÇÖt have a healthy option is also another problem, because mainly traditional breakfasts donÔÇÖt usually come in healthy flavors but if we try and move out of our comfort zones then YES, there are unlimited options for all of us. But to start our day with a thought of having a healthy breakfast will automatically ensure us a great day ahead because our body will support us throughout the day.
We generally look for too fatty options or high sugary or carb rich food which we need to consciously avoid.
Actually if you think there are too many things that we all can eat as breakfast and that will be healthy too!! I will share with you few such options
- Wake up 15 minutes earlier than your regular time, I feel it is always good to wake up early and have a relaxed start of the day, no hurry – no worry.
- Egg white with multigrain bread, can make scrambled or boiled as per choice
- A bowl full of muesli  with milk and honey
- IdliÔÇÖs with chutney
- Bowl of oatmeal with strawberries and honey
- Plain Dosa or protein rich dosa (mix dal)
- Tofu mixed in veg salad with juice
- Fresh fruit salad
- Boiled beans
- Sprouts mixed in tomatoes and onions
What all you should keep in mind for a healthy breakfast option is high proteins without too much saturated fat. Go in for a high fiber and rich nutrient, whole grain carbs, low-fat dairy or soy options.
To eat Healthy or Unhealthy???? Choice is yours.
MAD Tip 2 for healthy living ÔÇô A HEALTHY BODY = A HAPPY U
Life holds different meaning for all, but has humans we often tend to crib even if a smallest of thing doesnÔÇÖt go our way. We all expect a lot from life and which I feel is quiet natural but somewhere in managing our day-to-day requirements we forget ourselves and our very own existence on this earth. So stop for a while and think who you are and what you want in life? I am sure we all will have answers to these on top of our minds but the things that we wish in life are only the materialistic ones then where are the thoughts of our being healthy, fit and happy lost????
We always say to ourselves Life is tough! Life is sick! Why all bad things come to me NOW FOR A WHILE LETS STOP THESE THOUGHTS AND SAY TO SELF-
ÔÇ£Life is so easy! Life is so good! All good things come to meÔÇØ
Lets all try practising and see our life with a different meaning altogether, I am trying this so felt like sharing with you all toohope it helps!
- Believe in yourself
- Always smile
- Be positive ( if negativity comes in SWITCHimmediately switch your thought to MAD thumb rule)
- Thank god for your existence
- Forgive all
- Give 15 minutes to your body everyday ÔÇô focus on fitness, exercise, walk, practise yoga, dance
- Go green
- Respect all
- Show empathy
- Last of all remember the MAD thumb rule ÔÇ£life is beautifulÔÇØ LIVE IT!!
MAD tip 1 -
Life is beautiful…Live it!! Smile and keep smiling the perfect way to live. The biggest secret of lifeÔǪ enjoys it in every phase.
Beautiful things happen in our lives every day. Just open your eyes and see life is beautiful as rightly said everything happens for a reason. Life has lots of ups and downs and we just need to learn the art of handling them and coming out of tough situations more strong and controlled.
There are lots of beautiful things around us and itÔÇÖs only about how we see them. We need to be positive in all situations.
As rightly said ÔǪ No one can go back and make a brand new start. Anyone can start from now and make a brand new ending. So get up,what are you thinking about.. Do things you always craved to do, do things that make you happy, do things that spread happiness to othersÔǪ.ThereÔÇÖs a purpose to lifeÔÇÖs events, to teach you how to laugh more or not to cry too hard. "Remember – life is the way you want it to beÔǪ so why not start to live with positivity and control your thoughts because your thoughts become the things in your life".
As said by many well-known speakers, LetÔÇÖs start with few steps that will help you feel life is beautiful and it really is┬áÔÇô
- Believe in you ÔÇô you must feel good about you. Believe can work wonder. Belief can achieve the impossible.
- Think positive ÔÇô itÔÇÖs impossible to feel bad and at the same time have positive
thoughts. So work on the positives and try to avoid negativity coming in your
thoughts. Let go the difficulties from your past as you are the only one who can create the life you deserve.
- DonÔÇÖt StopÔǪin any situation donÔÇÖt stopÔǪan old saying…if you fall from the horse just dust yourself and get back on the back of the horse before you lose your nerves. Just remember donÔÇÖt stop!
- Live with 3 EÔÇÖs ÔÇô enthusiasm , empathy , energy and 3 FÔÇÖs ÔÇô faith, family, friends.
- Life is too short to wait hating anyone …forgive everyone for everything.
- Do the right thing; what other people think of you is none of your business.
- Be thankful to god before you go to bed at night.
- Dream more while you are awake.
- Treat yourself with love and respect and you will attract people who will show you love and respect.
- Life is to livelive it beautifully!!!!
{ 4 comments… read them below or add one }
- August 28, 2011 at 11:03 AM
Beautifull………… message…. I hope we can incorporate the ideas!!!!!!!!!!!
- August 28, 2011 at 1:29 PM
Thanks Seema….As said "The greatest wealth is health", so we all need to eat right, this was one of the thoughts that I felt like sharing with all my friends. Hope it works for all of us.
- August 12, 2012 at 4:28 PM
wow what a message u have shared with all of us..i better be like this from now..i just hope so..anyways the first point of getting up early gives me jitters as i am the one who gets glued to my bed in the mornings..when do u get up..and how u make it possible for yourself..
- August 12, 2012 at 5:10 PM
Thank you! Even I try to follow all this, but a gentle reminder is required to all of us…after all we all are humans :). I wake up at 5:30 am daily, its a routine now :)!
Leave a Comment


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Pain Clinic
General Clinic Information
The UAB Pain Treatment Clinic is located on the third floor of UAB Highlands. Our hours are Monday through Friday, 7:30 a.m. until 4:00 p.m.
To schedule an appointment, please call (205) 930-8966. Please leave a message if phone lines are busy and a member of the staff will return your call as soon as possible. A physician referral is required before your first visit. If you need to reschedule or cancel your appointment, please call at least 24 hours in advance when possible. Please note that there is a $50.00 no show fee. If a patient incurs two no show fees, they will be dismissed from the clinic.
After Hours and Emergencies
If this is a serious emergency, please call 911 for immediate assistance or visit the UAB Highlands emergency room.
What To Bring
Please bring photo identification, insurance cards and co-pays to your first visit. If possible, please bring any lab results, x-rays and prescriptions. If you are not being referred by a UAB physician, please bring any other medical information your referring physician has not already sent to our clinic.
Special Instructions
If you are having any pain blocks done, please do not eat or drink anything six hours prior to your procedure. Some procedures may require that you be sedated and will need a driver to escort you home.
Payment Information
Your co-pay is expected at time of service. If you are having a procedure done, your hospital or outpatient co-pay applies. Please check with you insurance provider if you have any questions about your hospital or outpatient co-pay as it is likely to differ from your usual co-pay.
Labs/Tests Results
Since most of the testing is done on-site, results are often immediate and can be evaluated promptly.
Patient Education
Patients are provided with handouts and brochures providing additional information about their condition or a procedure that was performed upon leaving.
Patients with Limitations
Patients visiting UAB Highlands can take advantage of the convenient free parking in front of the building or next door in the 12th Street parking deck. Both parking spots are handicapped accessible and patients may be dropped off at the first floor entrances. Wheelchair assistance is available upon request.


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Still room to get in.
Still room to get in.
I am ready for some football.
Spectacular. Missed the first week in my league last year and my computer was down so I missed it again this year.
Hrm... didn't see this topic at all... So I missed Week 1 too! But I joined, for fun.
Facebook: facebook.com/grtoocool Twitter: @LGKTooCool
While it seems like most of you are allergic to the "like" button, I just want to personally say thanks for looking anyway.
Rink Dawg
If you missed week one, you only missed 16/256 games, or 6% of the game. If your 6% within winning the league, you can take a moral victory from it.
I missed week 1 too, but I still joined for fun.


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Blue Book® Suggested Retail Value
Fuel Economy (city/hwy)
Quick Facts
There are no 1999 Suzuki Grand Vitara reviews. However, the following might be helpful:
User Reviews
The community thinks...
Best auto I've ever owned by Grand Vitari lover in Idaho on 03/17/2011. Trim: 1999 Suzuki Grand Vitara JLX+ 4WD, Owned more than 10 years.
Pros: This car is great for the ones that need something small to do everything with. I purchased this SUV new and now have over 200k miles on it and have only $1100 in repairs into it and still get 24 mile to the gallon. Two front brake calipers and an AC condenser, that's it. I've taken this car across country on road trips during the summer and camping and hunting in the fall. this car has cost me about $0.17 per mile to owne and operate including buying the car. Not only that but this is my second Suzuki, my family has had 8, 5 have been the Grand Vitari. I have three family members waiting for me to buy a new daily driver so they can get this one. Not going to happen anytime soon.
Cons: I really can't come up with something I don't like about the SUV. Okay how about this. The remote key fobs they give you were cheap and broke within a few years. It was tragic, I've had to unlock the doors like a normal person for years now....
Overall review: This is the perfect little SUV for anybody looking for a do it all. During the summer my mountain bike is a fixture on the top and I don't feel it there unlike other compact SUV's. However I can feel it a bit when I put three of them up there. The four wheel drive system is second to none in any class, I drive up hills with a smile on my face when people are watching. With as many miles I have on this SUV I'm supprised everythime I check my gas mileage, normally 23 to 24 everytime I check and it's been paid for since 2002. I keep thinking I'll get another car, then I realize how much I enjoy driving this little SUV. I drive 50 miles round trip to the office and I never have to worry about the reliability of this SUV. When I do buy another daily driver, it will once again be another Suzuki and more that likely another Grand Vitari as well.
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Financial Services Report Indonesia 2nd Quarter
- Language: English
- 22 Pages
- Published: June 2014
- Region: Indonesia
Indonesia's financial assets are relatively small, at the equivalent of just 109% of GDP in 2012, but the country's banks are healthy and will look to expand in the forecast period.
The government has a large presence in the banking sector-a legacy of the bail-outs and takeovers required in the wake of the 1997-98 Asian financial crisis. It will continue its efforts in the next five years to return banks to private ownership.
Foreign banks will attempt to increase their involvement in the Indonesian banking sector, and overseas securities and insurance companies will become more prominent in the market. However, current liberal ownership rules are in the process of being tightened. In mid-2012 Bank Indonesia (BI, the central bank) issued a regulation that limits ownership of a local bank by a single shareholder to 40%. But BI said that it would grant exceptions to the rule, which applies to both local and foreign shareholders, in the event that the owners are well-capitalised financial institutions.
Industry List: Asset management, Financial Services, Banking, Financial Services, Financial markets and instruments, Financial Services, Financial regulation, Financial Services, Financial Services, Financial Services, Insurance
Industry Codes (NAIC): 52
Industry Codes (SIC): 60
Financial Services Report Indonesia 3rd Quarter
Financial services report
Asset managers
Financial markets and instruments
Financial regulation
Regulatory watchlist
Monetary and currency policy: Monetary policy
Monetary and currency policy: Exchange rates
Indonesia at a glance
Fundamental indicators
Key contacts


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Famous Smoke Shop Premium Cigars at Discount Prices! Order Toll Free: 1-800-564-2486 Contact Us
La Aurora Reviews
Showing 21 through 30 of 52 reviewsLa Aurora Principes Chocolate
"Well worth the price."La Aurora #4
My first experience with this cigar was on the beach in Juan Dolio, Dominican Republic. Those vendors always give you the first one free, and then they have you hooked!! This is a great everyday smoke when you are kicking around the yard, or in the car heading to work.Tankman in VT December 10, 2008
"I always come back to these as my everyday stick."La Aurora Bristol Deluxe Tube
I always come back to these as my everyday stick.Mike in Dixon IL October 24, 2008
"Impressive and well worth the time to smoke it"La Aurora #4
I was quite surprised at the steady burn of this cigar. The taste was pleasant and the overall feel of it was very impressive for its price range. I was looking for a Dominican cigar similiar to a Partagas. I still prefer the Partagas over this, but overall for the price it is a great substitution. The only thing i didnt really like too much was the smell of the brazilian wrapper, about half way through i could really taste it. Overall it was a great surprise!Jeremy K in Mississauga August 17, 2008
"Not as good as I thought."La Aurora Principes Flavors Assortment Sampler
I liked it Ok, but it was not worth the money. It almost tasted burnt inside. Stronger than I expected. Burned out too easily.Yoop in Oklahoma August 11, 2008
"Big Mistake"La Aurora Principes Flavors Assortment Sampler
I am a regular Principes smoker, I like the budget friendly daily smoke. I saw the flavor assortment sampler pack on my last purchase of sticks. I was curious so I bought them. I am not a fan of flavored cigars but I gave in to curiosity. These sticks were so pungent that I was weary even before lighting a stick (rum flavor) The tobacco flavor of the cigar got lost with the infused flavor. After a few puffs I found myself spitting out the flavor all the way thru the smoke. If you are a fan of flavored sticks you may enjoy these. For those of you who enjoy the natural flavor of a good cigar stay away from these. I will be pulling these out on those times when the ladies want to pretend they can hang with the big boys(no offense ladies). Take my advice stick with the natural principes they are good daily sticks at a descent price. If you want something sweet go to the candy store.Julian in Phoenix Arizona July 16, 2008
"all things considered not too bad"La Aurora Robusto
The price is great. The tobacco is smoother, milder, than the regular principes I have tried. The added flavors are ok, but really generic.steve t in delaware June 27, 2008
"Almost a Fuente"La Aurora Robusto
This is a decent smoking premium cigar with good construction and a decent amount of smoke off the draw which can be a bit tight. the taste of the cigar is a bit putrid at times as its not near as tasty as a Funete, more similar to that of a punch than a funete. the construction was moderate to good, the taste is missing something as other sizes deliver a much creamier taste than the Robusto which the wrapper puts out a swirling amount of smoke which isnt close to pleasant.thebaby981 in Louisiana March 6, 2008
"I'd rather smoke a backwoods!"La Aurora Robusto
Smoked 2 so far and both had terrible draws. The taste was far from great and I really had to work just to get any smoke! Never again!! I'd rather have a pack of backwoods smokes than these.Patrick in Phoenix, Arizona March 3, 2008
"Better than Fuente"La Aurora Robusto
I prefer these to regular Fuente Cameroon cigars. La Aurora has more flavor, delivered in a smooth manner. Good construction and taste. Plus they are a better value. Another thing, La Aurora makes better sizes too.It's cold up here in Michigan October 27, 2007
"good stick for 3.00"Previous Next
Afriend brought a box from dominican repb. a box of 20 strait from the factory Iam. on my 2nd box but running low buy La Aurora next thing to cohibaandy in Lehighton Pa. October 11, 2007


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JMSN, (pronounced Jameson) is a breath of fresh oxygen in the music industry. With many similarities to phenomenal, yet mysterious artist The Weeknd, he has channeled an energy that is imperative for this growing genre of music. It's not really pop. It's not really r and b. It's not really emo. It's something much more becoming. Something necessary.
You'll understand once you watch this video.
JMSN's breakout appearance was on several songs of which he featured on Kendrick Lamar's new LP 'Good Kid, M.A.A.D City'. In honor of the release JMSN released his debut album Priscilla, which sparked a buzz all over the internet.
His most recent work is with The Game in a song entitled "Pray". Check it out. JMSN is definitely an artist to watch for this upcoming year. One of my favorite artist in the game right now.
Who are yours?


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NBA >> Orlando Magic
Sign up for Yardbarker's daily Top 10 newsletter, the Morning Bark! Customize to get news on your favorite sports and teams.
Found December 31, 2012 on Orlando Magic Daily:
PLAYERS: Glen Davis, Nikola Vucevic, Gustavo Ayon, Andrew Nicholson, Jacque Vaughn
TEAMS: Orlando Magic
TEAMS: Orlando Magic
There is a big hole in Orlando's lineup. Just about everyone will remind you about it. The five-game losing streak Orlando is suffering through is (perhaps) coincidentally matching the time since Glen Davis suffered a strained shoulder. To that point, Davis was puting in a career season in averaging a career-best 16.0 points per game and 7.9 rebounds per game. His scoring and rebounding numbers are at career bests per 36 minutes despite the increase in playing time. And his field goal percentage is at 44.9 percent, which is better than many expected when considering the roster and how much more of the ball he would see (25.7 percent usage rate). Davis very much was the emotional core for the Magic and one of its rising leaders. He was showing signs of maturity in both his actions and in his play. Approximately one-third of Davis' shots occur at the rim and more than half come within 10 feet. After a season where he took 28.9 percent of his shots from 16-23 feet, Davi...
Original Story: http://www.orlandomagicdaily.com/dece...
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More than 34 percent of U.S. companies that responded to a Proofpoint survey on e-mail security and data loss prevention reported that they had had a leak of sensitive data in the last year, according to this Dark Reading piece.
The recession's effect on budgets and layoffs of both IT and non-IT staff was blamed for high numbers of security issues in the survey.
The survey also found that action is being taken; more than half of the companies have had to discipline employees over e-mail policy and 31 percent report terminating someone over a policy violation.
Also among the positive news is that over two-thirds of companies in the survey have social networking policies. More than 80 percent of companies with over 20,000 employees have such a policy. However, more than 20 percent of large companies report having fired an employee over social networking use in the last year.
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Business performance information for strategic and operational decision-making
SOA uses interoperable services grouped around business processes to ease data integration
Data warehousing helps companies make sense of their operational data


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Categories > Cartoons > South Park > Things Change
Ch.50 Reviews
By ROSSELLA1
Note: I do not own South Park or any of its characters. Oh, and spoilers for You're Getting Old and probably future episodes.
"Okay, can you move it around?" The doctor was asking.
"I don't know!" Cartman grumbled. "Why would I move something if it might hurt? Fucking idiot!"
"Cartman!" Kyle exclaimed.
"Fine, fine!" Cartman sighed, and wincing, managed to roll his ankle. Damn! Why did Kyle have to make him come to this asshole?
"Now, did that hurt?" The doctor asked.
"Damn right it hurt! What type of fucking doctor are you?" Eric snapped.
"Cartman, he's just trying to help!" Kyle pleaded.
"What?" Cartman turned to his friend. Did Kyle expect him to just the doctor walk all over him? "Doctors are supposed to make you better not hurt!" He turned back to the doctor. "You better not give me AIDS!"
"Why…why would I give you AIDS?" The doctor replied confusedly, looking between Kyle and Cartman.
"Never mind." Kyle shook his head. "Is it broken?"
"Well," The doctor smiled after a second, "I'll have to check the X-ray to make sure but I think it's just sprained."
"See, Kahl?" Cartman smirked. "I was right and you were wrong!"
"He said he still needed to look at the X-ray." Kyle scoffed unconvincingly.
"Well," The doctor said hesitantly, "I guess I'll go check."
"Uh…yeah, that would be nice!" Cartman rolled his eyes. Did this asshole think they had all day?
The doctor smiled. "Well, in that case I'll be back in just a few minutes. You two boys-"
"Just go already!" Cartman snapped. "GOD!" The doctor hurried from the room.
Kyle sighed and crossed his arms. "Dammit, you're such an asshole, Cartman."
"Wha-what did I do?" Cartman asked. Yeesh! It wasn't like he'd lost his temper or anything like that!
It turned out Cartman had fractured a small bone in his ankle. The doctor had given him a cast and told Cartman to rest. Kyle had called Mrs. Cartman to pick them up. Now they were plopped down on the couch, watching the Lord of the Rings Trilogy and eating Cheesy Poofs and popcorn.
"Hey, you know Legolas and Gimli are sort of like us, don't you think?" Cartman asked, looking over at Kyle innocently.
"Uh…sure, Cartman." Kyle responded, confusedly. It wasn't like Cartman to start 'heart-to-heart' conversations.
"I mean," the other boy continued, "they start out as enemies, then turn into reluctant allies, but slowly become friends."
"And by the end they're inseparable. Just like us."
Realization dawned on Kyle. "You don't need to worry, Cartman." He reassured. "Just because Stan's back, doesn't mean he'll become my best friend again."
"Of course not!" Cartman snapped. "Who said I was worried?"
Kyle hid a smirk. "No one. I just wanted to make sure you knew that."
"Oh." A pause. "Hey, Kahl?"
"Can I have more popcorn?" Eric asked, eyes blinking with a sweet smile.
"You already ate most of the bowl!" Kyle snorted, looking down at the bowl.
"I know, but I'm still hungreeee!" Cartman whined.
"No." Kyle replied firmly. "No more. I want to eat some too."
"But, Kaaahl! I broke meh ankle!"
"What's that got to do with popcorn?"
"You need to be nice to meee!"
"Okay." Kyle grinned. "You can have the rest."
"That's more like it!" Cartman replied smugly, reaching for the bowl. Before Cartman could react, Kyle pulled the bowl back and threw the contents at his friends. "Ay!" Cartman exclaimed and picking up the bag of Cheesy Poofs, returned fire.
But Kyle was prepared and had one of the couch pillows in front of him before Cartman could do much damage. Scooping up the Cheesy Poofs that fell to the side, Kyle aimed them around his shield and was amused to hear a crunch. Sneaking a peek he saw that Cartman had emptied the bag and was catching the missiles in his mouth.
With a chuckle, Kyle let his pillow drop. "The point wasn't for you to eat them!"
"Mmm…you totally suck at combat, Kahl." Cartman said. "Never use food...mmm...unless you want to lose…"
"Whatever, Cartman." Kyle laughed and got up. "I'm going to go wash my hands. They're covered in butter and cheese."
"You know, we're only going to have more." Cartman protested.
"You're going to have more." Kyle pointed out. "Only you could eat more after popcorn and candy at the movies and then popcorn and Cheesy Poofs here."
"Hey," Cartman answered defensively, "when global warming brings about another ice age, I'll be able to go a month without food and you'll be wishing that you ate more popcorn and Cheesy Poofs!"
"Yeah, except we'll all be dead by then." Apparently Cartman couldn't think of a reply to that so Kyle continued on his way to the bathroom. Casting a glance over his shoulder, he shut the door. He turned the faucet on and quickly washed and dried his hands but then pulled out his phone and dialed a number that he hadn't dialed in years but had never wanted to delete.
"Hello?" The voice said.


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High Plains Drifter key artCopyright by respective production studio and/or distributor. Intended for editorial use only.
Directed by: Clint Eastwood
Cast: Clint Eastwood, Verna Bloom, Paul Brinegar, Billy Curtis, Jack Ging, Marianna Hill, Anthony James, Geoffrey Lewis, John Quade


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A passive, in-line method of monitoring film removal (or deposition) during plasma etching (or deposition) based on interference phenomena is disclosed. Plasma emission intensity is monitored at a selected wavelength, without additional illuminating apparatus, and variations in plasma emission intensity are correlated to remaining film thickness, etch rate and uniformity, and etch selectivity. The method is useful in conjunction with nitride island etch, polysilicon etch, oxide spacer etch, contact etch, etc. The method is also useful in determining a particular remaining film thickness (e.g., just prior to clearing) at which point the etch recipe can be changed from a high-rate, low selectivity etch to a low-rate, high-selectivity etch.
TECHNICAL FIELD OF THE INVENTION The invention relates to semiconductor device fabrication, and more particularly to plasma etching. Utility of the invention in plasma deposition is also disclosed. BACKGROUND OF THE INVENTION An important process in the fabrication of integrated circuits is the removal of various layers of materials formed on a silicon wafer. Two major etching techniques are in common usage; 1) wet, or chemical etching, wherein a photoresist-patterned silicon wafer is immersed in a chemical solution; and 2) dry, or plasma etching, wherein a wafer is exposed to a plasma containing a gas such as CF.sub.4. The present invention relates mainly to plasma etching. Plasma etch processes and apparatus are generally well known for etching materials for semiconductor device fabrication. The process begins with application of a masking material, such as photoresist, to a silicon wafer. The masking pattern protects areas of the wafer from the etch process. The wafer is then placed in a plasma reactor ("etcher") and etched. Subsequent steps are determined by the type of device being fabricated. This process is especially valuable for the definition of small geometries. A common etch process involves the removal of polysilicon ("poly") overlying gate oxide ("oxide"). Among other issues involved, the selectivity of etch between the poly and the underlying gate oxide ("poly:oxide selectivity") should be as high as possible so as to reduce oxide loss. Using a typical etcher, such as the top-powered, wafer-grounded LAM 490 etcher, poly:oxide selectivities in excess of 100:1 can be achieved with low power (100 Watt) Cl.sub.2 /He plasmas, but can result in severe undercutting or notching of the poly sidewall. On the other hand, helium-rich (greater than 50%), high power (greater than 200 Watts) processes produce vertical sidewalls at the expense of selectivity (less than 30%) and tend to incidentally damage the gate oxide. Lateral etching occurs during the overetch cycle and not during bulk poly removal. Hence, the amount of overetch must be limited. Irrespective of the particular etch process being employed, it is generally of universal concern to detect when an overlying material ("film") has been completely removed ("cleared"). This is generally accomplished by detecting the presence of the underlying material, now exposed, in the plasma, such as by spectroscopy. It would also be advantageous to know (i.e., be able to detect) when a desired amount of material, in some cases less than all of the overlying material, has been removed. U.S. Pat. No. 4,415,402 discloses a method for determining the completion of removal ("clearing") by plasma etching of phosphorous doped silicon dioxide from an underlying substrate. The patent illustrates an endpoint detection technique wherein a specific wavelength, or range of wavelengths, changes in intensity upon clearing the etched material. The patent does not describe a technique for detecting when the film being etched reaches a known, pre-cleared thickness. U.S. Pat. No. 4,454,001 discloses an interferometric method for measuring etch rate. The method makes use of the phenomenon that device patterns etched into substrates produce diffraction patterns when illuminated. A beam of light is directed onto a region of a substrate being etched. The light reflected from the region forms a diffraction pattern, and the intensity of a diffraction order is detected and recorded as a function of time during the etching process. The etch rate of the substrate is inversely proportional to the period of oscillations in the recorded intensity/time curve. U.S. Pat. No. 4,680,084 discloses interferometric methods for etch monitoring and thickness measurement. The etch depth of a substrate region undergoing etching is monitored, or the thickness of the region is measured, by impinging the region with light and detecting the intensity of the reflected light. U.S. Pat. No. 4,687,539 discloses endpoint detection and control of a laser etching process. An excimer laser vaporizes successive layers of a chromium on a region, and a chromium chloride reaction product is formed on the region being etched. A dye laser directed to a zone above the region being etched causes copper chloride in the zone to fluoresce. A narrow band photodetector registers the fluorescence. U.S. Pat. No. 4,717,446 discloses endpoint detection for etching epitaxially grown silicon. A "monitor" wafer is etched along with "working" wafers. The monitor wafer consists of a silicon substrate having an oxide layer and a polysilicon layer deposited thereon. A laser is used to measure the etch rate of the monitor wafer by measuring reflected light off of the oxide layer. U.S. Pat. No. 4,936,937 discloses a method of detecting an endpoint of plasma treatment. The use of a spectroscope is disclosed. U.S. Pat. No. 5,023,188 discloses an interferometric method whereby etched trench depth is determined by shining coherent light onto a wafer surface. U.S. Pat. Nos. 4,846,928, 4,847,792 and 4,861,419 generally disclose methods of comparing endpoint traces obtained by conventional means with a reference trace in order to detect abnormalities. Reference is made to determining regions of an endpoint curve (i.e., before endpoint, during endpoint, overetch), and taking the slope of the curvature within such regions. In the references noted above, we generally see that: 1) various techniques and equipment are known for monitoring plasma etching processes; 2) the use of separate illuminating light (e.g., laser) is employed for monitoring; 3) often, test (monitor) wafers are required to characterize and/or monitor etching; and 4) endpoint detection is primarily detected at monitoring clearing of a film (layer) being etched. Regarding the etching process itself, various etch "recipes" may be used. For example, the flow rate and pressure, electrode spacing, and gaseous species may be varied depending on the material being etched to yield desired selectivities, etch rate and uniformity. DISCLOSURE OF THE INVENTION It is therefore an object of the present invention to provide technique for real-time thickness measurement using standard endpoint detection devices. It is a further object of the present invention to provide a technique for observing interference effects in plasma etching using passive monitoring devices, without using active illumination sources (e.g., separate laser). It is another object of the present invention to provide a technique for switching over from a relatively high rate, low selectivity etch process to a more selective etch process at a stage in the etching process where the film being etched is at a known remaining thickness. It is a further object of the present invention to provide a technique for determining etch rate uniformity, average etch rate, and selectivity, on working wafers (i.e., without using a monitor wafer). It is a further object of the present invention to provide a technique for characterizing etch parameters that is self-calibrating. It is a further object of the present invention to provide a technique for in-line qualification of etching equipment, without the need for test (monitor) wafers or off-line thickness measurements. According to the invention, plasma emission intensity is monitored during etching, at a particular wavelength, and is correlated to remaining thickness of a film being etched. In this manner, it can be determined when one or more known film thicknesses remain over a substrate. According to a feature of the invention, by knowing when certain remaining film thicknesses occur, the overall etching process can be calibrated on-the-fly. In this manner, by knowing etch rate and remaining thickness, etch endpoint can be closely predicted, and overetch can be more carefully controlled. According to another feature of the invention, etching of a layer can proceed initially with a high-rate, low-selectivity etch recipe, and when it is determined that a known film thickness remains, the etching recipe can be changed to one having a lower rate, but higher selectivity, to more carefully control overetch, undercutting and possible damage to the underlying substrate. By using the plasma itself as a light source and as a media to convey thickness information, the use of additional active illumination sources is avoided. This can be very useful when etching must be stopped before clearing the underlying material. The disclosed techniques can also be useful in monitoring plasma deposition processes (i.e., rather than in monitoring etching). Further according to the invention, an in-line qualification process for determining etch rate, uniformity and selectivity is facilitated by monitoring plasma emission intensity. Other objects, features and advantages of the invention will become apparent in light of the following description thereof. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic representation of interference from multiple reflections within a thin transparent film on reflective substrate, and is representative of the prior art. FIG. 2 is a plot of relative percent (%) reflectivity of oxide on silicon at 436 nm, as a function of oxide thickness. FIG. 3 is a plot of plasma emission intensity (expressed in "counts") versus etch time (in seconds) for actual (squares) versus theoretical reflectivity (dots). FIG. 4 is a plot of layer thickness (e.g., oxide) versus etch time. FIG. 5 is a plot of plasma emission intensity versus time, similar to FIG. 3, derived from an experiment monitoring plasma emission at 436 nm from a uniform blanket oxide (diamonds 502) and from a nonuniform patterned oxide (dots 502), etched with a Rainbow etcher. FIG. 6A is a flow chart of steps involved in off-line qualification of etch processes. FIG. 6B is a flow chart of steps involved in real time, in-line qualification of etch processes. FIG. 7A is two graphs illustrating non-linear clearing pattern of exposed area "A", and FIG. 7B is two graphs illustrating linear clearing pattern of exposed area "A". FIG. 8 is graphs of simulated endpoint curves upon clearing of the wafer with radially symmetrical etch rates. FIG. 9 shows a typical endpoint trace, according to the present invention. The following nomenclature (abbreviations) is used in the description that follows: I plasma emission intensity S monitored signal t time [X*] a species X concentration in its excited state [X] a species X concentration in its ground state A total exposed area, not including any etch mask a cleared area, area being overetched E wafer-averaged etch rate of film being etched E' wafer-averaged etch rate of underlying material .SIGMA..sub.y summation over indices y k.sub.y second order reaction rate with species Y [Y] a species Y concentration k.sub.e electron impact dissociation rate k.sub.p pumping rate c,b,k,.beta.,.alpha.,B constants S.sub.o intensity of monitored signal before endpoint S.sub..infin. intensity of monitored signal after complete clearing t.sub.1 time when the wafer starts clearing t.sub.2 time when the wafer completed its etch H initial average film thickness U.sub.n initial film uniformity u uniformity of etch rate E E.sub.O etch rate at the wafer center E.sub.R etch rate at the wafer edge r radial position R wafer radius .DELTA.t infinitesimal time increment .DELTA.r infinitesimal radial increment .delta. a variable T time to endpoint T.sub.E total etch time including overetch d.sub.0 initial underlying film thickness d.sub.m minimum underlying film thickness after etch d.sub.a average underlying film thickness after etch R.sub.m minimum selectivity between etch rates E and E' R average selectivity between etch rates E and E' i.sub.0,i.sub.e,S.sub.e,S.sub.O fitting parameters DETAILED DESCRIPTION OF THE INVENTION Inasmuch as the invention relates to monitoring plasma etching, and the apparatus used is well known, the description that follows is directed to techniques, rather than to any particular apparatus. Optical Interference in Plasma Etching Endpoint Monitoring In reflectivity spectrophotometry (interferometry), the thickness of a film or stack of films can be determined by measuring the reflectivity of the film compared to that of the reference substrate. The substrate is usually totally reflective, such as silicon or aluminum. Multiple reflections of incident light at the interfaces combine to produce a reflectance that depends on the film thickness. The interference pattern changes with wavelength also. Various film thickness measuring tools use this effect. FIG. 1 shows the mechanism of interference resulting from multiple reflections within a thin transparent film on reflective substrate. Incident light 102 is refracted through a thin film 104 and is reflected from the top surface of an underlying substrate 106. A ray 108 is indicative of light exiting the film after one reflection by the substrate. A portion of this light is internally reflected from the top surface of the film back onto the substrate. A ray 110 is indicative of light exiting the film after two reflections by the substrate. FIG. 2 shows the results of measurements taken on an oxide film over a silicon substrate, as the oxide film is etched away, and illustrates how the relative percent (%) reflectivity (vertical axis) of the oxide film varies as a function of the (remaining) oxide film thickness. Measurements were taken at 436 nanometers (nm) using a Wild Leitz LTS-M/SP measuring tool. In the plot, 100% reflectivity corresponds to an theoretical uncoated silicon wafer (silicon reference). The cyclic nature of the resulting curve is the result of "destructive interference". FIG. 3 relates to etching oxide over silicon (see FIG. 2), and shows actual plasma emission intensity (squares) 302 and theoretical % reflectivity (dots) 304 as a function of etch time. Emission intensity is quantified as "counts", on the vertical axis. The data represented in FIG. 3 was obtained while etching a blanket plasma LTO (low temperature oxide coated) wafer on a Rainbow 4500 etcher, with an oxide etch recipe. A 436.+-.5 nm filter was placed behind the back chamber window. As shown in FIG. 3, the trace (squares 302) dips by almost 400 counts after 24 seconds (sec) of etching. The oxide was 2500 .ANG. thick and very uniform (<.+-.2%), which made this pattern repeatable wafer-to-wafer. The actual endpoint occurs at 40 sec, when the oxide clears the silicon, which produces a 200 count drop. Since the shape of this pattern resembled the pattern caused by destructive interference shown in FIG. 2, it was thought to be caused by the wafer absorbing a significant amount of light from the plasma. Returning to FIG. 2, it is apparent that maximum absorption occurs at a point labelled "204" for an 800 .ANG. thick oxide film. The thickness scale (horizontal axis of FIG. 2) is translated into a time scale (horizontal axis of FIG. 3) as the oxide thickness changes during etching. FIG. 4 shows remaining film thickness versus time. AS shown in FIG. 4, the etch rate is linear in time. Using this relationship, and the data from FIG. 2, the theoretical relative % reflectivity was plotted in FIG. 3 (dots 304) so as to overlap the intensity curve (302). Although units are not comparable, the relative position of maximum absorption is well matched (i.e., at 24 seconds for intensity curve 302, and at 27 seconds for the theoretical curve 304; see also point 404 on FIG. 4). The shift may be due to a poor assumption of refractive index, etch rate variations and measurement errors. The interference effect is more pronounced with very uniform oxide covering a large flat area and with uniform etch rate, as is the case with the blanket oxide on silicon used herein. It was also observed when etching a nonuniform, patterned oxide of comparable average thickness, although the magnitude of the interference effect was reduced (FIG. 5). FIG. 5 shows plasma emission intensities at 436 nm from a uniform blanket oxide (diamonds 502) and from a nonuniform patterned oxide (dots 504), etched on a Rainbow etcher with a typical oxide etch recipe. These observations were unexpected since the device that collects the plasma emission does not look directly atop the wafer, and is somewhat blinded by the focus ring surrounding the periphery of the plasma. Quartz windows allow light to pass through the ring. This indicates that the oxide film absorbs a substantial amount of light emitted from the plasma at this wavelength. It can already be seen that the behavior of the endpoint traces can be observed simply by monitoring plasma and wafer emission intensity, for example at 436 nm.+-.5 nm, while etching oxide. The behavior is attributable to interference effects, such as those used in reflectivity spectro-photometry (e.g., operation principle of the Wild Leitz instruments used for measuring film thicknesses). The emission intensity correlates well to theoretical reflectivity values obtained from the Wild Leitz film thickness measuring tool. This effect can be used in some applications to stop etching (endpoint) before uncovering the underlying material, which allows for changing over to a more selective or less damaging etch process (recipe). As a very general proposition, real-time thickness measurement during plasma etching is not new, but it is typically done with sophisticated optical equipment, and usually involves an additional illuminating source (e.g., a laser). According to the present invention, the emission intensity of the plasma-wafer combination itself is monitored to obtain useful information about the etching process, without the need for additional equipment. Thus, according to the invention, endpoint traces can reveal interference effects caused by plasma emission being absorbed by the etched film. An absorption minima corresponds to a known remaining thickness, and could therefore be used for endpoint before uncovering the underlying material (before "clearing"). This would enable a switchover to a more selective or less damaging process at a known thickness before clearing. The method could be advantageously employed for resist strip for example, as well as back side etch, or nitride etch. The method works best with very uniform films and etch rates, and large exposed areas (unpatterned wafer). This "passive" method does not require any special hardware other than standard endpoint devices (filter, monochromator, diode array) found on our plasma etchers. Each application must be dealt with separately and careful choice of wavelength may be necessary. Wavelengths corresponding to intense emission from excited gas products must probably be avoided as they would mask the interference effect. The effect was observed during oxide etch on silicon. Whether it can be seen in other applications is still to be investigated. For example, it could be used to determine thickness during plasma deposition. One skilled in the art to which the present invention most nearly pertains will appreciate that while the results obtained hereinabove were obtained and validated during oxide etch over silicon, similar useful results can be obtained to control plasma etching of other materials. Furthermore it will be appreciated that, while the preceding discussion is primarily directed to plasma etching, similar useful results can be obtained to control plasma deposition processes. Application of Optical Emission Spectroscopy Characterization of Etching Processes Dry etching processes must be regularly characterized in order to assess their current performances against predetermined specifications (operating window). The equipment must be tuned or repaired when current performances fall outside of the operating window. Troubleshooting of process-related problems and process characterization is best addressed by using statistical methods such as design of experiments (DOE), response surface methodology (RSM) or Taguchi methods, among other known techniques. Whether a process is working within specifications or not is typically determined by conducting less time consuming but more frequent tests, often referred to as "process qualifications". Qualifications should be quick to reduce production delays yet complete enough to detect (flag) any defects.
Etching qualifications are typically performed on a test (non-working, non-product) wafer, and are typically directed to etch rate, etch uniformity, and sometimes to selectivity or linewidth measurements. Uniformity and selectivity are determined from etch rate measurements at various locations across the wafer using interferometry (reflectivity spectrophotometry) or ellipsometry for film thickness measurements before and after etch. Hence, since the test wafer must be partially etched, product wafers are not suitable for such qualifications because re-etching them to completion would not be desirable from a quality viewpoint. FIGS. 6A and 6B illustrate two qualification schemes. FIG. 6A is a flow chart of steps involved in off-line qualification of etch processes. FIG. 6B is a flow chart of steps involved in real time, in-line qualification of etch processes. The latter offers control at the wafer level while saving time and cost of test wafers. Other than the off-line test wafer method explained above, there is another related technique where etch uniformity is analyzed by means of optical emission, also referred to as endpoint trace. See "Monte-Carlo Simulation of Plasma Etch Emission Endpoint" E. J. Bawolek, Emerging Semiconductor Technology, ASTM STP 960, D. C. Gupta and P. H. Langer, Eds., American Society for testing and Materials, 1986. Plasma emission has long been used for endpoint purposes. For example, upon completion of etching of a top layer, the underlying material is exposed which changes the emission intensity at certain wavelengths. Monitoring only one such changing signal provides a means of stopping the etching and preserving the underlying material. See U.S. Pat. No. 4,312,732. According to the present invention, qualification time and cost can be decreased by eliminating the need for off-line measurements, during which production must be halted, or by reducing off-line qualification times while still obtaining the necessary data. To this end a method has been devised based on analysis of optical emission signals from the plasma during etching. Additional thickness measurements are still required, but these are usually part of the typical overall manufacturing process (e.g., before etch film thickness, after etch underlying film thickness). Generally, because of film non-uniformity and etch non-uniformity, etching must be carried out beyond endpoint to assure complete clearing (overetch). When a long overetch is required, the etch selectivity to the underlying material must be high to preserve it (e.g. thin gate oxide). Therefore it is important to achieve good film and etch uniformities in order to reduce overetch, along with high selectivity to preserve the underlying material. The etch rate itself influences throughput. As noted in the "Monte-Carlo Simulation" reference, mentioned above, a Monte Carlo approach is used to simulate emission intensity as the wafer clears (endpoint). A number of assumptions are made, one of which (No. 4) is significantly different from the present invention in that product species are assumed to be linearly proportional to the exposed (underlying) film area, whereas in the present disclosure that concentration will be shown to not only be proportional to exposed area but also to etch rate. In addition, the reference assumes a random Gaussian distribution of instantaneous etch rate, whereas in general, etch rate may be a reproducible function of wafer location (e.g. center to edge clearing). Finally, the reference aims at reproducing emission intensities during endpoint given certain etch conditions. In the present invention, emphasis is placed on deriving etch conditions from analysis of the emission curve under suitable conditions. According to the invention, a filter, a monochromator or a diode array is used to collect plasma emission at a given wavelength, or range of wavelengths. The emission intensity I, is converted into an electrical signal (voltage) and digitized (counts), to become the end signal being monitored, S. The technique of the present invention relies on the following ten assumptions (numbered 1-10): Assumption #1: the invention best applies to single wafer etchers but could also be useful in batch systems. Most modern dry etching equipment is for single wafer processing. Assumption #2: the emission intensity I, is assumed to be representative of the overall plasma body rather than of a particular spot. In single wafer systems, the plasma volume is usually small enough for diffusion forces to average out concentrations of monitored species over the time scale used in sampling their emission (e.g. sampling rate in excess of 30 millisec). Assumption #3: the emission signal S, is assumed to be proportional to the emission intensity I, i.e. S(t) .alpha. I(t) where t is the time. The detection device must have sufficient linearity (<.+-.5%) and an adequate usable range to avoid saturation. Assumption #4: The signal being monitored must preferably represent emission from an etch product (e.g. oxygen in oxide etching) or a consumed species (e.g. fluorine in silicon etching). All are assumed to be proportional throughout the process, I(t) .alpha. [X*] .alpha. [X], where [X] is the species concentration in the gas phase and [X*] is the species concentration in its excited state. This assumption will be realized if the electron excitation cross-section of the monitored species is stable. If the electron concentration at the excitation energy of the monitored species is not constant, actinometry can be used to compensate for changes in electron energy distribution. Actinometry is described in "Optical emission spectroscopy of reactive plasmas: A method for correlating emission intensities to reactive particle density", J. W. Coburn, M. Chen, J. Appl. Phys., 51, pp. 3134-3136, June 1980. Assumption #5: loss of excited species other than by relaxation is assumed to be negligible, i.e. the pumping rate constant is much lower than excitation rates. Under the above assumptions, the monitored species concentration [X] can be written: ##EQU1## where "[X]" is averaged over the entire plasma volume, "c" and "b" are constants, "A" is the total exposed area, "a" is the area that has been cleared, "E" is the film's average etch rate across the wafer, "E'" is the underlying material's average etch rate, and k=.SIGMA..sub.y k.sub.y [Y]-k.sub.e -k.sub.p is the balance of produced and lost species X by second order gas phase reactions with species [Y] and rates k.sub.y, by electron impact dissociation with rate k.sub.e, and by pumping with rate k.sub.p. (Note that k.sub.e is only relevant for molecular species. Assumption #6: k is assumed constant throughout the process. This assumption is valid if clearing of the wafer does not significantly affect the electron impact dissociation cross section in the case of X being molecular, and the concentrations [Y] and rates k.sub.y. When a product of etching is being monitored, its concentration must be a function of etch rates E and E'. If a consumed species was monitored instead, a similar expression could be written but its concentration would be proportional to -[aE+(A-a)E']. In addition, some emission may be present when the wafer is cleared, i.e. a=A, and a background emission may exist in the absence of wafer or when the wafer is patterned by a mask whose etch rate is not zero. Using equation (1), the monitored signal "S" will be written as follows: S=.alpha.(A-a)E+.beta.aE'+B (equation 2) where e=a/(1-k) and .beta.=b/(1-k) are constants, and "B" is the background signal for A=0 and a=0. The parameter "B" also accounts for gas phase reactions. Before endpoint, a=0 and after complete etch a=A. Defining S.sub.o =.alpha.AE+B and S.sub..infin. =.beta.AE'+B, taking the time derivative of S(t), we obtain: dS/dt=(.beta.E'-.alpha.E)da/dt=[(S.sub..infin. -S.sub.o)da/dt]/A (equation 3) accounting for the fact that A, B and etch rates are constant. If a loading effect is present, etch rates become functions of cleared area. Etch rates may also be functions of time when etching conditions drift. Assumption #7: no significant loading effect, etch rates are assumed constant. The loading effect can be reduced by increasing power and by reducing the gas residence time in the reactor (e.g. high flow rate). Under assumption #7, equation (3) represents the most general form of endpoint trace as a function of the clearing pattern in time. FIG. 7A is two graphs illustrating non-linear clearing pattern of exposed area "A", and FIG. 7B is two graphs illustrating linear clearing pattern of exposed area "A". If t.sub.1 and t.sub.2 are respectively the times when the wafer starts clearing and completed its etch, then by definition, we must have: ##EQU2## Defining "H" as the incoming film thickness to be etched with uniformity U.sub.n and "E" its average etch rate across the wafer with uniformity "u", defined such that t.sub.1 =H(1-U.sub.n)/(E(1+u)) and t.sub.2 =H(1+U.sub.n)/(E(1-u)) represent the times it takes to clear the thinnest point with the fastest etch rate and the thickest point with the slowest etch rate. Assumption #8: the analysis is restricted to the case where da/dt=constant can be assumed. That is, the endpoint trace varies linearly from S.sub.o to S.sub..infin. (FIG. 7b). This is usually not true over the entire transition region from S.sub.o to S.sub..infin., but if most of that region can be approximated to a straight line it will be sufficient for all practical purposes. FIG. 8 is graphs of simulated endpoint curves upon clearing of the wafer with radially symmetrical etch rates. Simulated shapes of endpoint traces with center to edge clearing are shown in FIG. 8 (etch rate is faster or slower at center). The etch rate is assumed to have a radially symmetrical dependence, E=E.sub.O .+-.r(E.sub.O -E.sub.R)/R, where "r" is the radial position, "R" is the wafer radius, "E.sub.O " and "E.sub.R " the etch rates at the center (O) and at the edge (R) respectively. A perfectly uniform film was assumed (i.e., u=0). These expressions were introduced in equation (2) and normalized so that S.sub.o =1, and S.sub..infin. =0. The endpoint curve is shown from time t.sub.1 to t.sub.2, also normalized from 0 to 1. Hence, it can be seen from FIG. 8 that: S(t)=S.sub.o +[E(1-u.sup.1)/(2Hu)].sup.2 (S.sub..infin. -S.sub.o)t.sup.2, for FIG. 8A; and S(t)=S.sub.o +[E(1-u.sup.2)/(2Hu)].sup.2 (S.sub..infin. -S.sub.o)(4Hut/[E(1-u.sup.2)]-t.sup.2), for FIG. 8B. These behaviors are intuitive if one considers that between times t and t+.DELTA.t (t.sub.1 <t<t+.DELTA.t<t.sub.2), a ring (r,r+.DELTA.r) of area 2.pi.r.DELTA.r is being cleared. If the wafer starts clearing at the center toward the edge, the ring area increases which results in an increasingly fast endpoint drop (shoulder, FIG. 8 left). In case of an edge to center clearing pattern, the opposite argument explains the slowing endpoint drop (tail, FIG. 8 right). Endpoint curves similar to those of FIG. 8 may also result from loading effects or other clearing patterns, and may not be valid for determining the etch rate uniformity. Under assumption #8, we can write, da/dt=A/(t.sub.2 -t.sub.1). Introducing this expression in equation (3) with t.sub.2 and t.sub.1 defined as above, we obtain: dS/dT=[E(1-u.sup.2)(S.sub..infin. -S.sub.O)]/[2H(u+U.sub.n)](equation 5) solving for u, and using .delta.=2H dS/dt / [E(S.sub..infin. -S.sub.o)], we obtain: u=[-.delta.+{.delta..sup.2 +4(1+.delta.U.sub.n)}.sup.1/2 ]/2 (equation 6) If H and U.sub.n cannot be measured prior to etch, .delta. can be determined by equating the time to endpoint T to E/H. Furthermore, T=(t.sub.1 +t.sub.2)/2 (FIG. 7), finally: .delta.=2T dS/dt / (S.sub..infin. -S.sub.o). If the incoming film is very uniform, e.g. .delta.U.sub.n <<1, the term .delta.U.sub.n can be dropped out of equation (6), in which case the film uniformity does not need to be measured. The selectivity of etch rate between the film being etched and the underlying material can be estimated provided that the underlying material's thickness is known prior to etch and can be measured after etch. If the initial thickness is d.sub.0 and the minimum final thickness is d.sub.m, then the worst case selectivity is given by R.sub.m =E(1-u)(T.sub.E -t.sub.1)/(d.sub.0 -d.sub.m), where T.sub.E is the total etch time including overetch. Defined that way, the minimum selectivity R.sub.m is a conservative figure for the average selectivity R=E/E'>R.sub.m, which could also be estimated by R=E(T.sub.E -T)/(d.sub.0 -d.sub.a), where d.sub.a is the average remaining thickness. In deriving the uniformity "u", it is assumed that the thickest point of the film being etched experiences the slowest etch rate while the thinnest point experiences the fastest etch rate. This may not always be true, and in general: H(1-U.sub.n)/(E(1+u)))<t.sub.1 <H(1+U.sub.n)/(E(1+u)) and H(1-U.sub.n)/(E(1-u)))<t.sub.2 <H(1+U.sub.n)/(E(1-u)) where the sign (+ or 1) before the term "U.sub.n " determines the range over which transitions take place. The sign before the term "u" remains either positive or negative by definition. Equation (6) provides an upper limit on uniformity u whose target is u=0, for, perfect etch rate uniformity is desired. However this formula will fail to produce meaningful data if the film uniformity is poor i.e. .delta.U.sub.n .gtoreq.1, in which case the term "u" becomes an estimate of U.sub.n, u.fwdarw.U.sub.n. FIG. 9 shows a typical endpoint trace, according to the present invention. Least-squares fits have been used in determining S.sub.o and dS/dt. The time t.sub.1 is calculated from the intersection of S(t)=i.sub.e +s.sub.e t during endpoint with S(t)=i.sub.0 +s.sub.0 t before endpoint i.e. t.sub.1 =(i.sub.0 -i.sub.e)/(s.sub.e -s.sub.0), and t.sub.2 =(S.sub..infin. -i.sub.e)/s.sub.e where S is estimated from the endpoint trace where it tapers off. Also S.sub.o =i.sub.0 +s.sub.0 t.sub.1. In FIG. 9, emission intensity is expressed in arbitrary units with 0.1 sec time resolution showing signal drop at endpoint (T.apprxeq.62 sec) and some overetch. Assumption #9: the monitoring device provides sufficient time resolution so as to derive meaningful fits. Assumption #10: sufficient overetch is allowed in order to see the tail of the endpoint trace when the film being etched has cleared. In summary, the overall qualification procedure and analysis of the endpoint trace of FIG. 9 is carried out step by step (Steps 1-15, below): A) Before etch measurements: Step 1. Film thickness: H=1913 .ANG..+-.U.sub.o =0.01 (1.0%) Underlying film thickness measurements if known: d.sub.o =400 .ANG.. B) Observation from endpoint trace: Step 2. Before endpoint: S(t)=i.sub.0 +s.sub.0 t with i.sub.0 =4861 counts, s0=0.24 counts/sec. Step 3. During endpoint: S(t)=i.sub.e +s.sub.e t with i.sub.e =54562 counts, s.sub.e =-832 counts/sec Step 4. After endpoint: S.sub..infin. =2000.+-.100 counts is estimated. Step 5. Total etch time including overetch: T.sub.E =72.9.+-.0.05 sec. C) Calculations: Step 6. t.sub.1 =(i.sub.0 -i.sub.e)/(s.sub.e -s.sub.0)=59.72 sec Step 7. t.sub.2 =(S.sub..infin. -i.sub.e)/s.sub.e =63.18 sec Step 8. Total etch time to endpoint: T=(t.sub.1 +t.sub.2)/2=61.45 sec Step 9. S.sub.o =i.sub.o +s.sub.o t.sub.1, S.sub.o =4875 counts Step 10. .delta.=2Ts.sub.e /[(S.sub..infin. -S.sub.o)]=35.561 Step 11. Check .delta.U.sub.n <1: .delta.U.sub.n =0.36, OK. Step 12. Film average etch rate: E=H/T=1868 .ANG./min. Step 13. Etch rate uniformity: u=[-.delta.+(.delta..sup.2 +4(1+.delta.U.sub.n)].sup.1/2 ]/2=0.0381, which reads u<.+-.3.8%. D) After etch measurements: Step 14. Underlying film thickness remaining, minimum of 18 measurements across the wafer: d.sub.m =230 .ANG.. E) Calculation of etch rate selectivity: Step 15. Ratio of etch rates R.sub.m =E(1-u)(T.sub.E -t.sub.1)/(d.sub.0 -d.sub.m)=2.32, which reads selectivity R>2.32:1. Under similar etching conditions, an etch rate of 1840 .ANG./min, a uniformity of .+-.5.78% and a minimum selectivity of 1.98:1 were measured using partially etched patterned test wafers using a Wild Leitz system. Before and after etch measurements were made at 54 locations distributed across 18 dies (15.times.15 mm) with three sub-locations per die for estimation of microloading effects. Under different etching conditions, an etch rate of 7260 .ANG./min, a uniformity of .+-.11.7% and a minimum selectivity of 1.85:1 were measured on partially etched test wafers. The endpoint trace analysis resulted in an etch rate of 6326 .ANG./min, a uniformity of .+-.7.6% and a selectivity of 1.7:1. Therefore the endpoint trace analysis produced data consistent with the traditional off-line test wafer method, though absolute values are somewhat different. The microloading effect was not observed, which validates assumption #7. In the first experiment, etch rates are very similar with both methods but quite different in the second experiment where the test wafer had to be etched for only 10 sec due to the high etch rate. In this case, the optical method is expected to provide a more useful figure. Differences in uniformity values arise from assumption #8, wherein the onset of endpoint and its tail are not accounted for in estimating the slope (FIG. 9), whereas with 54 measurements per wafer the test wafer method is likely to include these regions. Selectivity trends are also similar. Note that although minimum selectivity figures are different between these two etching conditions, their averages were similar at 2.1:1. Error margins can also be determined for etch rate, uniformity and selectivity values based on the noise of the emission signal and on known measurement errors. In summary, the feasibility of in-line optical emission intensity analysis during plasma etching is a viable technique for characterizing etch rate, uniformity and subsequently selectivity. The method applies when ten basic assumptions are fulfilled, the most restrictive being in order of importance: i) absence of a significant loading effect, ii) a linear change of emission signal over most of the endpoint transition, and iii) sufficient overetch for clearing the film being etched. Other requirements can be met by careful choice of hardware and monitored wavelength(s). The method applies to, but is not restricted to, nitride island etch, polysilicon etch, oxide spacer etch, contact etch. It is useful in conducting Design Of Experiments (DOE) where several processes must be compared while collecting line width data. In that case wafers are etched to completion while etch characteristics can still be obtained, whereas the traditional method would require extra test wafers for partial etch. Coupled to an in-line analysis module, the method is useful for characterizing product wafers being etched, even on an individual basis if desired. In this manner, off-line equipment qualifications would not be necessary to the extent that the equipment is working within specifications. The technique of this invention presents a novel method for determining the uniformity of etch rate during plasma processing of production or test wafers in single wafer etchers. Under suitable conditions often met in today's advanced process equipment, the etch rate and its uniformity and in some cases the selectivity of etch to the underlying material can be derived by analysis of optical emission signals from the plasma itself. This method allows in-line qualification of etching equipment without the need for test wafers or off-line thickness measurements. Since etching is carried out to completion, data relevant to the final result, such as linewidths, can easily be retrieved. In addition, manufacturing of the wafer under test can be resumed without compromising its quality. Laser illumination requires a laser and an illumination port in the etching equipment. Another limitation is that, generally, a laser will illuminate only a small spot on the wafer being monitored, which means that a single feature will characterize the results for the entire wafer. With the present technique of monitoring plasma intensity itself, no additional equipment/ports are required, and the entire wafer is monitored. Furthermore, with the techniques of the present invention, the etching of product (i.e, working) wafers can be easily monitored.


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Poulan Pro PP3516AVX 16Inch 35cc 2Cycle GasPowered AntiVibration
Posted by admin | Posted in Blog, Reviews | Posted on 10-11-2010-05-2008
Poulan Pro PP3516AVX Review
Average user rating:
Poulan Pro PP3516AVX Chain Saws are quite ideal for anyone who wants quality cut without breaking the bank. They are safe, reliable and easy to use even for the first time users. Unlike other brands, their light weight and small size makes them easy to use and maneuver comfortably. If you are already interested in purchasing a Poulan Pro PP3526AVX, click here to see it on Amazon.
The Poulan Pro 16 inch 35 cc anti- vibration chain saw has a 16 inch bar allowing a cutting capacity of 32 inches in diameter. This amazing chainsaw possesses an anti-vibration mechanism where the engine is isolated from the chassis. This significantly reduces irritating vibration, enhances comfort derived, and improves safety measures for the user. Further safety is enhanced by the chain brake, which is triggered by inertia. This spots rotation of the chain in case of any kickback. It has an auto oiling system that lubricates both the chain and the bar continually during use. This type of chainsaw is cheap and offers high cutting speed. It has been proven to be the most convenient and the fastest in the market.
Unlike the slower Husqvarna 240e 16- inch 38cc, whose starter handle is quite large, the Poulan comes with EPS effortless pull starting system, anti- vibration handle and a duralife extended engine. Furthermore, those using Husqvarna 240e 16- inch 38cc chainsaw are inconvenienced by the fact that they need the use of a screwdriver in order to remove the film from the spark plug, as well as the air filter. This creates a potential for the lost screw.
Another brand of chainsaw is Solo 636, 36.3cc which is easy to start due to presence of a button for compression release on a significantly larger engine of two-strokes. The saw possesses a single wrench. This fits both the spark plug and bar bolt heads ensuring that the screw cannot be lost, unlike the husqvarna. This saw is fast, well-balanced and light. In spite of all this, the handle of the starter is far too tiny. Furthermore, the oil caps and gas caps are very poorly shaped. Such features can be irritating, especially when found in such a costly product.
John Deere CS36LE, 35.2cc is a satisfying chain saw reflecting good-quality mechanical design. It has properly shaped gripping areas, oil and gas caps that turn easily and screws that are quite comfortably adjusted. However, it has very slow cutting speed and its on/off switch, which is shielded, makes it very hard to press with gloved hands.
Whether you are just getting started with power cutting or going for replacement of a busted saw, Poulan is certainly a great choice.


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Archive for category : Nazareth
Andy's Corner – Spring Sports
BY: ANDY WEAVER Hello and Welcome to a Mid April Sports update on local Nazareth High School Athletes! This week
Nazareth Area Middle School, one of four in PA to Receive National Green Ribbon
Gov. Tom Corbett announced on Monday that the U.S. Department of Education has selected four Pennsylvania schools, including Nazareth Area
Mayor Fred C. Daugherty Jr. resigns post as Nazareth Mayor
Fred C. Daugherty Jr. has resigned as Mayor of Nazareth effective April 15, according to a press release issued by
Chiavaroli releases statement on Naz pool closure for 2013
Following a new release that the Nazareth Swimming Pool will be closed for the entire 2013 season Nazareth Borough Council
Andy's Corner – Nazareth Sports
Andy's Corner Say Goodbye to Winter and Hello Spring ~ Blue Eagle's Style By: Andy Weaver The 2012-2013 Nazareth Blue
Andy's Corner
Nazareth Sports Review By: Andy Weaver January 24, 2013 – This past week for Nazareth sports had it's ups and
Local Student Honored
Courtney A. Ruch, Nazareth, was among the students at The University of Scranton recently recognized for outstanding academic achievement at
Nazareth Sports Review
Nazareth Sports Review By Andy Weaver As we enter the 1st full week of 2013 things heat up in Nazareth
Nosey in Nazareth
Dear Nazareth, This has been a great day for me and it all started when I picked up a copy
GLVCC Nazareth Chamber Office Grand Opening and Ribbon Cutting a Huge Success!
Lehigh Valley, PA – October 24, 2012 On Monday, October 22nd the newest office of the Greater Lehigh Valley Chamber


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Thanks. I second guess my decisions sometimes.
Originally posted on Tracie Louise Photography:
We all make decisions. Every moment of everyday. Most are tiny, insignificant. Some a little bigger, affecting our lives to some small degree. And every now and then we are faced with the big ones. The monumental decisions. Life changing… direction altering decisions. These are the hard ones.
My usual approach to such things, and the advise that I often give others is to always go with your heart over your head.
I know that most would probably suggest that you do the complete opposite to that, but I disagree.
Your head is ruled by thoughts, rationale, weighing up what is right and what is wrong with the decision. Which sounds sensible on the surface… but here's the thing. Your head is also ruled by your ego. Doing what might appear to be the best thing, but really only serving the needs of the egoic persona.
The heart on the…
View original 168 more words


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Home » Opinion » Editorials
Ban dodgeball? Why not ban boys?
Ten days ago the board voted 4-1 to ban dodgeball from Windham schools. The board had the support of the administration. It is a "human target" game, the board said. It can cause concussions. It can make kids feel bad. It must be eradicated.
Windham children would be better protected if the voters would elect wiser school board members.
Dodgeball games at Windham public schools involved Nerf balls. Who gets a concussion from a Nerf ball? Football players get concussions. Hockey players get concussions. Both of those sports produce many times more concussions than Nerf-armed dodgeball players do. Yet football and hockey (in collaboration with Pelham High) will continue to be played at Windham High School. The concussion claim was a ruse.
The real reason was to reduce violent play that can lead to bullying. As Dennis Senibaldi, the lone dissenter on the school board, said, "If someone is being bullied, there are ways to address that. We have anti-bullying policies."
That leaves violent play. Michael Thompson, a psychologist and co-author of "Raising Cain: Protecting the Emotional Life of Boys" said in an interview with the LiveScience website a few years ago, "There is no such thing as violent play. Violence and aggression are intended to hurt somebody. Play is not intended to hurt somebody. Play, rougher in its themes and rougher physically, is a feature of boyhood in every society on Earth."
As Thompson noted, boys are hardwired for dominance and aggression. Playground activities that let them channel those traits into competitive games, rather than actual fighting, do not create violent children; they provide non-violent outlets for boys' natural tendencies. Banning dodgeball does zip to protect kids. All it does is remove from school a safe outlet for boys' naturally dominant and competitive tendencies. That is, it harms boys. The school board should reverse its decision at once.
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Doug Wojcik and Tulsa Golden Hurricane are looking to stop a three-game losing streak Wednesday night at the Reynolds Center. They are hosting Wichita State at 7:00pm. The Shockers are TU's oldest rival. Doug and the guys have had a rough pre conference so far. They have lost five games to some pretty good teams by an average of less than four points. Coach says they need to continue to improve as they get ready for the start of conference play next month.
The goal for the Golden Hurricane is to make the NCAA Tournament for the first time under Coach Wojcik. With the recent loss, an at large bid looks slim so TU is focused on winning the Conference USA Title.
Tulsa and Wichita State tip-off Wednesday night at 7:00pm.
P.O. Box 8 Tulsa, OK 74101-0008
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Newark, N.J. • Robert Turbin believes he's not unlike any other player in Super Bowl XLVIII, personally motivated to perform and represent something beyond himself.
"Everybody has a story," the Seattle Seahawks running back from Utah State said during Media Day. "Everybody had something that helps them persevere through whatever, to help them get to this point in life."
Robert Turbin's NFL career rushing and receiving statistics:
Year G Att. Yds. Avg. Rec. Yds. Avg.
2012 16 80 354 4.4 19 181 9.5
2013 16 77 264 3.4 8 60 7.5
Denver vs. Seattle
O Sunday, 4:30 p.m.
TV » Ch. 13
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But to this degree? Not likely. Turbin's story is one of continual setbacks for his family in northern California, riddled by disability and death.
Two years ago, as they were working out in Logan in advance the NFL draft, teammate Bobby Wagner heard Turbin answer a phone call, receiving the news that his brother had been shot and killed in Oakland, Calif. That tragedy followed the death of a sister, amid the challenges of another sister's severe form of cerebral palsy.
The knee injury that Turbin sustained during his USU career, causing him to miss the 2010 season, seemingly would be enough adversity for anyone. And yet Turbin, whose Twitter account carries the message "RIP bro & sis," plays on.
"No matter what happens in life, he's still grinding," said Wagner, a Seahawks linebacker. "Just the stuff that he's been through in his life and and still being able to be the positive person that he is and uplift his family and still be the player he is, he's definitely someone I look up to."
Like Wagner, Turbin played a major role in the turnaround of Utah State's football program. He came back from the knee injury and rushed for 1,517 yards in 2011, when the Aggies won their last five regular-season games to receive the school's first bowl bid in 14 years.
Former teammate Joey DeMartino remembers "the look in his eyes … just hungry to get back on the field" as Turbin rehabilitated his knee. And he delivered when the Aggies needed him most.
With bowl eligibility at stake, Turbin scored the go-ahead touchdown in double overtime at Idaho, then Wagner secured the win with an interception. The next week, Wagner's fumble recovery preceded USU's clock-killing drive, with Turbin gaining 4 yards on a fourth-and-1 play from the USU 44-yard line with 1:44 remaining in a 21-17 victory.
"If I can't get one yard," Turbin said that day, "then we've got a problem."
USU was so well-stocked at running back that Turbin shared the position with two other future NFL draftees in 2011, even while racking up big numbers. In Seattle, he's cast as the backup to Marshawn Lynch, one of the NFL's top runners. "It's how the league works," Turbin said. "I was prepared for any role that they gave me, really."
Even Lynch needs an occasional rest, so Turbin plays regularly and is often used in third-down passing situations as a blocker. "We like his size, we like his speed, we like his toughness," said offensive coordinator Darrell Bevell.
Turbin usually gets four or five carries, with his biggest workload coming during the Seahawks' overtime win against Tampa Bay as he gained 37 yards on eight attempts.
In 2012, the Seahawks drafted defensive end Bruce Irvin in the first round, Wagner in the second round, quarterback Russell Wilson in the third round and Turbin in the fourth round. That's a remarkable class, and historic for USU. Wagner and Turbin became the highest-drafted pair of Aggies since Rulon Jones and Eric Hipple in 1980.
Barely two years after playing in the Famous Idaho Potato Bowl seemed like a big deal, they're in the Super Bowl. "It's cool, looking back on all the stuff that we went through together, all the stuff that we've done for each other throughout our college career," Turbin said.
And Turbin's family history keeps him grounded and thankful to be where he is. "It's definitely a good feeling to be in a position where I can give back to my family and friends and anyone else who helped me along the way," he said.
Copyright 2014 The Salt Lake Tribune. All rights reserved. This material may not be published, broadcast, rewritten or redistributed.


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[Minecraft 1.2.5/12w19a] [128x] Metroid Prime Texture Pack v0.6.5.1Minecraft Texture Packs [ June 03, 2012 at 6:00 PM ] 1,608 Views
This is the newest cover with my own modified skin!
The gravity suit version of the new cover
The phazon suit version of the new cover
The pumpkinblur.png, a.k.a. pumpkin vision
updated items to snapshot 12w7a!
contains a couple of edited textures
a screenshot of the current nether (impact crater), note the blue stuff is soul sand, but i made it look like phazon
Iron doors on left, wood doors on right, spider ball tracks as ladders ;D
Paintings for all your aesthetic needs :3 (still a few more to go)
the red rose as a red starburst and the brown mushroom as a blastcap!
Chozo ruins hologram nodes as torches, they look awesome!
New paintings and their aesthetic uses
An example of painting aesthetics
A screenshot with a good angle on the blocks
Notice: This HD texture pack requires the HD texture pack fix before you can use it.
- Terrain: 56%
- Gui: 20%
- Environment: 100%
- Mobs: 15%
- Particles: 35% to 40%
- Font: 10%
- Armor: 70%
- Art: 100%
- Animations: more testing….. new bow…
Future updates:
- Meta Ridley as Enderdragon
- Random HD mobs
- animated terrain
- Fully updated arm cannon charging
- more items
- a playable map
- hd textures for some mods maybe?
Additional Details
Update log :
- Furnace has been fixed.
Progress: 100% complete
Credit to: soul117eater from planetminecraft
|128x Texture Packs, Metroid Prime, Metroid Prime Texture Pack, Minecraft 1.2.5, Minecraft 1.2.5 Texture Pack, Minecraft 12w19a
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We received a few messages about a trailer for a new show about clones that appeared during last night's BBC America broadcast of The Snowmen. This is that trailer.
ORPHAN BLACK Teaser - BBC America New Series March 30
Have you had the feeling that someone looks familiar?
Have you ever had that feeling several times over?
Last night we premiered the poster art and first image of our new original sci-fi series Orphan Black. It's the story of a girl named Sarah who assumes the identity of a woman only to later learn that she is her clone.
(Source: youtube.com)
Second season start 4/19/14!!!
Guess what my new show for the spring is going to be?


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- Anil Rajvanshi
- Phaltan
- India
This conversation is closed.
Debate: Is corruption a moral or a legal issue?
Too often the corruption debate and discussions all over the world are focused on how somebody broke a law. By that definition Mahatma Gandhi was the most corrupt man since he periodically broke British laws!
By dictionary definition corruption relates to doing things which are not ethical.
Hence how should the corruption be defined and fought for greater good?
Topics: Ethical Greed Legal cooruption moral issue society
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Nov 3 2012: i want to tell a story..
a woman went to police station to complain against gang rape, later she was asked to accept a request from police to please him, so that he can accelerate investigation.
that is what is happening to a common man. business people are making money in various sectors, besides the present demands of the day like petrol, power, telephone, gas, and duty on television besides alcohol, tobacco products have become inevitable. the government has taken the opportunity as best time to hike the prices. man has become slave to the above commodities and accepting the hike in prices, since he can not live with out them. when government is finding the people as consumers, what ethics can we expect from politicians?
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