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|Official site
|Pop Punk
New Found Glory - Band HistoryNew Found Glory began in 1997 in Coral Springs, Florida as the project of two high school teens. Later that year, the band released their first EP It's All About the Girls via Fiddler Records. They quickly became fairly successful locally and around the East Coast. Soon, the band signed a deal with Eulogy Recordings and released Nothing Gold Can Stay (1999). However, they had barely put the album out before they were snatched up by Drive-Thru Records. The move proved to be beneficial, however, as their follow up New Found Glory (2000) peaked at number 107 on U.S. Billboard charts and went on to be certified gold. Sticks and Stones (2002) did exponentially better, catapulting them to number 4 on U.S. Billboard charts. This was followed by Catalyst (2004) which peaked at number 3, marking the peak of the band's success. From there, the band would decline slightly in terms of commercial popularity, but not much. Coming Home (2006) would be their last full-length with Drive-Thru, peaking at number 19 on Billboard, although Not Without a Fight, released through Epitaph Records, peaked at number 12. The band continues to record and tour, and though pop-punk is no longer as popular as it once was in the mainstream, they continue to receive strong support from their fans. For this reason, make sure to get your New Found Glory tickets early.
New Found Glory - The MusicNew Found Glory play bright, poppy pop-punk, drawing comparisons to bands like Blink-182 and MxPx. The band also draws inspiration from the hardcore scene, as guitarist Chad Gilbert hails from hardcore punk band Shai Hulud. Regardless, their music is accessible to even those who would never listen to heavy music, as it is primarily hook driven and concerned with being catchy.
Best Pop-Punk/Emo Bands of the Late '90s & Early 2000s
Is it punk or is it pop? Is it emo or does it just suck? Regardless, that sweet decade between the late '90s and early 2000s brought us some of the catchiest songs in recent rock n' roll history. Who stood out amongst the sea of Hurley-wearing, black nail polish-painted musicians? Find out below. A-F…Read more
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date city state venue 2/24/2015 Melbourne Vic The Hi-Fi 3/13/2015 Pomona CA The Glass House 3/14/2015 Oakland CA Oakland Metro Operahouse 3/16/2015 Colorado Springs CO Black Sheep 3/17/2015 Lawrence KS Granada 3/19/2015 Des Moines IA Wooly's 3/20/2015 Minneapolis MN Varsity Theater 3/21/2015 Milwaukee WI Eagles Ballroom 3/22/2015 Palatine IL Durty Nellies 3/24/2015 Lansing MI The Loft 3/25/2015 Cincinnati OH Bogarts 3/26/2015 Columbus OH Newport Music Hall 3/27/2015 Lancaster PA Chameleon Club 3/28/2015 Sayreville NJ Starland Ballroom 3/29/2015 Huntington NY The Paramount 3/31/2015 Pawtucket RI The Met 4/1/2015 New Haven CT Toad's Place 4/2/2015 Silver Spring MD The Fillmore Silver Spring 4/3/2015 Carrboro NC Cat's Cradle 4/4/2015 Jacksonville FL Aqua Nightclub And Lounge 4/4/2015 Jacksonville FL Aqua Nightclub And Lounge 4/6/2015 Orlando FL The Beacham 4/7/2015 Charleston SC Music Farm 4/9/2015 Nashville TN Mercy Lounge 4/10/2015 Little Rock AR Juanita's 4/11/2015 New Orleans LA Tipitina's 4/12/2015 Houston TX Fitzgerald's 6/17/2015 Anchorage AK Sullivan Arena 7/22/2015 Cleveland OH Quicken Loans Arena 8/20/2015 St. Polten Green Park - St. Polten 8/24/2015 London London O2 Academy Islington 8/25/2015 London London O2 Academy Islington 8/26/2015 Edinburgh Edinburgh The Liquid Room 8/28/2015 Reading Brk Richfield Avenue 8/28/2015 Leeds Yorkshire Bramham Park 8/29/2015 Leeds Yorkshire Bramham Park 8/30/2015 Leeds Yorkshire Bramham Park
date city state venue 5/2/2014 Meerhout Vlg De Vlessenhoeve 5/18/2014 Asbury Park NJ Asbury Park Oceanfront 9/6/2014 Toronto ON Downsview Park 9/6/2014 Toronto ON Downsview Park 10/3/2014 San Diego CA House of Blues San Diego 10/4/2014 West Hollywood CA House of Blues Sunset Strip 10/5/2014 Tempe AZ Marquee Theatre 10/7/2014 Austin TX Emo's Austin 10/9/2014 Tampa FL The Orpheum 10/10/2014 Orlando FL House of Blues Orlando 10/11/2014 Fort Lauderdale FL Revolution Live 10/12/2014 Atlanta GA Masquerade 10/14/2014 Baltimore MD Rams Head Live 10/15/2014 Atlanta GA The Masquerade 10/15/2014 Philadelphia PA Theatre of Living Arts 10/16/2014 Boston MA House of Blues Boston 10/17/2014 New Haven CT Toad's Place 10/18/2014 Sayreville NJ Starland Ballroom 10/19/2014 New York NY Best Buy Theater 10/21/2014 Buffalo NY Town Ballroom 10/22/2014 Pittsburgh PA Altar Bar 10/23/2014 Cleveland OH House Of Blues Cleveland 10/24/2014 Detroit MI Majestic Theatre 10/25/2014 Chicago IL House of Blues 10/26/2014 St Louis MO The Ready Room 10/28/2014 Lincoln NE Bourbon Theatre 10/29/2014 Denver CO Summit Music Hall 10/30/2014 Albuquerque NM Sunshine Theater 10/31/2014 Las Vegas NV Body English 11/1/2014 Anaheim CA House of Blues Anaheim 11/2/2014 Sacramento CA Ace of Spades 11/4/2014 Seattle WA The Showbox 11/5/2014 Portland OR Hawthorne Theatre 11/7/2014 San Francisco CA The Regency Ballroom 11/8/2014 Santa Cruz CA The Catalyst 11/12/2014 Dublin D The Academy 11/13/2014 Belfast Bfs The Limelight 11/15/2014 Birmingham War The Institute 11/16/2014 Newcastle Upon Tyne T & W O2 Academy Newcastle 11/17/2014 Glasgow Rfw O2 ABC Glasgow 11/18/2014 Nottingham Ntt Rock City 11/20/2014 Liverpool Lan O2 Academy Liverpool 11/21/2014 Manchester Lancashire Manchester Academy 11/22/2014 Leeds Yorkshire O2 Academy Leeds 11/23/2014 Cardiff Cardiff Cardiff Solus 11/25/2014 Bristol Bst O2 Academy Bristol 11/26/2014 Portsmouth Hampshire Portsmouth Pyramids Centre 11/28/2014 London Lnd The Forum 11/29/2014 London Lnd The Forum 11/30/2014 Paris ?? Divan Du Monde 12/1/2014 Antwerp Antwerp Muziekcentrum Trix 12/2/2014 Utrecht Tivoli Vredenburg 12/3/2014 Hamburg HH Knust 12/4/2014 Koln NW Luxor 12/6/2014 Milan ?? Magazzini Generali 12/10/2014 Madrid Sala Penelope
date city state venue 2/22/2013 Atlantic City NJ House of Blues Atlantic City 3/27/2013 Anaheim CA Chain Reaction 3/28/2013 Anaheim CA Chain Reaction 3/30/2013 Las Vegas NV Desert Breeze Park 5/3/2013 Tampa FL Florida State Fairgrounds 5/3/2013 Tampa FL MidFlorida Credit Union Amphitheatre at the Florida State Fairgrounds 5/4/2013 Tampa FL MidFlorida Credit Union Amphitheatre at the Florida State Fairgrounds 5/4/2013 Tampa FL MidFlorida Credit Union Amphitheatre at the Florida State Fairgrounds 5/17/2013 Rochester NY Water Street Music Hall 5/18/2013 New Haven CT Toad's Place 5/19/2013 Montreal QC Metropolis 5/21/2013 Grand Rapids MI The Intersection 5/22/2013 Columbus OH Newport Music Hall 5/23/2013 Newport KY Thompson House 5/24/2013 Milwaukee WI Eagles Ballroom 5/25/2013 Minneapolis MN First Avenue 5/26/2013 Winnipeg MB Garrick Centre 5/28/2013 Saskatoon SK Louis' Pub 5/29/2013 Calgary AB MacEwan Ballroom 5/30/2013 Edmonton AB Starlite Room 6/1/2013 Vancouver BC Rickshaw Theatre 6/2/2013 Seattle WA The Showbox 6/3/2013 Portland OR Hawthorne Theatre 6/5/2013 Santa Cruz CA The Catalyst 6/6/2013 Ventura CA Ventura Theatre 6/7/2013 San Diego CA House of Blues San Diego 7/19/2013 El Paso TX El Paso County Coliseum 8/23/2013 Leeds Yorkshire Bramham Park 8/23/2013 Leeds Yorkshire Bramham Park 8/27/2013 Paris ?? Divan Du Monde 8/28/2013 Lyon Rho Ninkasi Kao 8/29/2013 Segrate Magnolia 8/29/2013 Lodi MI Magnolia 10/23/2013 San Francisco CA The Warfield 10/24/2013 Santa Ana CA The Observatory 10/25/2013 Las Vegas NV House of Blues Las Vegas 10/26/2013 Los Angeles CA Club Nokia 10/27/2013 San Diego CA Soma 10/28/2013 Tempe AZ Marquee Theatre 10/30/2013 Dallas TX House of Blues Dallas 10/31/2013 Houston TX House of Blues Houston 11/1/2013 New Orleans LA New Orleans City Park 11/1/2013 San Antonio TX Sunset Station 11/4/2013 Orlando FL House of Blues Orlando 11/5/2013 Atlanta GA Buckhead Theatre 11/6/2013 Charlotte NC The Fillmore Charlotte 11/7/2013 Silver Spring MD The Fillmore Silver Spring 11/8/2013 Sayreville NJ Starland Ballroom 11/9/2013 Huntington NY The Paramount 11/10/2013 New York NY Terminal 5 11/12/2013 Boston MA House of Blues Boston 11/13/2013 Philadelphia PA Electric Factory 11/14/2013 Pittsburgh PA Stage AE 11/15/2013 Detroit MI The Fillmore Detroit 11/16/2013 Cincinnati OH Bogarts 11/17/2013 Chicago IL Aragon Ballroom 11/19/2013 Minneapolis MN First Avenue 11/20/2013 Lincoln NE Bourbon Theatre 11/21/2013 Columbia MO The Blue Note 11/22/2013 Oklahoma City OK Diamond Ballroom 11/23/2013 Austin TX Emo's Austin 11/25/2013 Tucson AZ Rialto Theatre
date city state venue 1/21/2012 Rochester NY Main Street Armory 3/2/2012 Costa Mesa CA OC Fair & Event Center 3/2/2012 Costa Mesa CA OC Fair & Event Center 3/3/2012 Costa Mesa CA OC Fair & Event Center 6/20/2012 Las Vegas NV Luxor Festival Grounds 7/7/2012 Tinley Park IL Hollywood Casino Amphitheatre 7/8/2012 Shakopee MN Canterbury Park 7/9/2012 Bonner Springs KS Cricket Wireless Amphitheater - KS 7/12/2012 Burgettstown PA First Niagara Pavilion 7/13/2012 Holmdel NJ PNC Bank Arts Center 7/14/2012 Montreal QC Parc Jean-Drapeau 7/18/2012 Scranton PA The Pavilion at Montage Mountain 7/20/2012 Camden NJ Susquehanna Bank Center 7/21/2012 Uniondale NY Nassau Coliseum 7/22/2012 Hartford CT Xfinity Theatre 7/24/2012 Columbia MD Merriweather Post Pavilion 7/25/2012 Virginia Beach VA Farm Bureau Live at Virginia Beach 7/27/2012 Orlando FL Central Florida Fairgrounds 7/29/2012 Saint Petersburg FL Vinoy Park 7/30/2012 Charlotte NC PNC Music Pavilion 7/31/2012 Cincinnati OH Riverbend Music Center 8/1/2012 Milwaukee WI Marcus Amphitheater 8/4/2012 Redmond WA Marymoor Park 11/4/2012 Nottingham Ntt Rock City 11/4/2012 Nottingham Ntt Rock City 11/5/2012 Manchester Lancashire Manchester Academy 11/5/2012 Manchester Lancashire Manchester Academy 11/5/2012 Manchester Lancashire Manchester Academy 11/6/2012 Leeds W York Leeds University 11/7/2012 Glasgow Glasgow City Barrowland 11/8/2012 Norwich ?? University of East Anglia 11/8/2012 Norwich Nfk The Nick Rayns LCR 11/9/2012 Cardiff Cardiff Great Hall Cardiff University Student Union 11/10/2012 London Lnd Alexandra Palace 11/23/2012 San Francisco CA Bottom of the Hill 11/24/2012 San Francisco CA Slim's 11/25/2012 West Hollywood CA The Troubadour 11/26/2012 Pomona CA The Glass House 11/27/2012 Las Vegas NV HARD ROCK LIVE 11/29/2012 Denver CO Bluebird Theater 11/30/2012 Lawrence KS The Bottleneck 12/1/2012 Chicago IL Bottom Lounge 12/2/2012 Detroit MI Magic Stick 12/3/2012 Cleveland OH Grog Shop 12/3/2012 Cleveland OH Grog Shop 12/5/2012 Pawtucket RI The Met 12/6/2012 Boston MA Paradise Rock Club 12/7/2012 New York NY Irving Plaza 12/8/2012 New York NY Irving Plaza 12/9/2012 Philadelphia PA Theatre of Living Arts 12/11/2012 Towson MD Recher Theatre 12/12/2012 Greensboro NC Greene Street Club 12/13/2012 West Columbia SC New Brookland Tavern 12/14/2012 Orlando FL The Social 12/15/2012 Orlando FL The Social 12/16/2012 Fort Lauderdale FL Culture Room
date city state venue 2/17/2011 Anaheim CA Chain Reaction 4/29/2011 East Rutherford NJ MetLife Stadium 10/6/2011 Santa Cruz CA The Catalyst 10/7/2011 West Hollywood CA House of Blues Sunset Strip 10/8/2011 Tempe AZ Marquee Theatre 10/10/2011 Dallas TX Trees 10/11/2011 Austin TX Emo's Austin 10/14/2011 Atlanta GA Heaven Stage at Masquerade - GA 10/15/2011 Orlando FL House of Blues Orlando 10/16/2011 Fort Lauderdale FL Revolution Live 10/17/2011 Saint Petersburg FL Jannus Live 10/20/2011 Charlotte NC Amos' Southend 10/21/2011 Richmond VA The National 10/22/2011 Philadelphia PA Electric Factory 10/23/2011 Baltimore MD Rams Head Live 10/25/2011 Buffalo NY Town Ballroom 10/27/2011 Boston MA House of Blues Boston 10/28/2011 New York NY Best Buy Theater 10/29/2011 Sayreville NJ Starland Ballroom 10/31/2011 Pittsburgh PA Club Zoo 11/1/2011 Cleveland OH House Of Blues Cleveland 11/3/2011 Royal Oak MI Royal Oak Music Theatre 11/4/2011 Chicago IL House of Blues 11/8/2011 Saint Louis MO The Pageant 11/9/2011 Kansas City MO Arvest Bank Theatre at The Midland 11/10/2011 Denver CO Ogden Theatre 11/13/2011 Seattle WA The Showbox 11/14/2011 Portland OR Wonder Ballroom 11/16/2011 San Francisco CA The Regency Ballroom 11/17/2011 Anaheim CA House of Blues Anaheim 11/18/2011 Anaheim CA House of Blues Anaheim 11/20/2011 San Diego CA House of Blues San Diego 12/10/2011 Universal City CA Gibson Amphitheatre
date city state venue 1/29/2010 San Diego CA House of Blues San Diego 2/3/2010 Dallas TX South Side Ballroom 2/6/2010 Atlanta GA Masquerade 2/9/2010 Fort Lauderdale FL Revolution Live 2/10/2010 Orlando FL House of Blues Orlando 2/14/2010 Richmond VA The National 2/16/2010 Towson MD The Recher Theatre 2/17/2010 Philadelphia PA Electric Factory 2/18/2010 New York NY Irving Plaza 2/20/2010 Sayreville NJ Starland Ballroom 2/20/2010 Atlantic City NJ House of Blues Atlantic City 2/21/2010 Boston MA House of Blues Boston 2/24/2010 Hartford CT Webster Theater 2/26/2010 Pittsburgh PA Club Zoo 2/27/2010 Columbus OH Newport Music Hall 2/28/2010 Toronto ON Sound Academy 3/2/2010 Cleveland OH House Of Blues Cleveland 3/3/2010 Cincinnati OH Bogarts 3/4/2010 Royal Oak MI Royal Oak Music Theatre 3/5/2010 Chicago IL House of Blues 3/9/2010 Salt Lake City UT In The Venue 3/11/2010 Seattle WA The Showbox 3/12/2010 Portland OR Wonder Ballroom 3/13/2010 San Francisco CA The Regency Ballroom 3/18/2010 West Hollywood CA House of Blues (Sunset Strip) 3/19/2010 Las Vegas NV House of Blues Las Vegas 3/20/2010 Anaheim CA House of Blues Anaheim 3/21/2010 Anaheim CA House of Blues Anaheim 4/25/2010 Amherst MA Mullins Center 8/2/2010 Asbury Park NJ The Stone Pony 8/29/2010 Tallahassee FL Floyds Music Store
date city state venue 10/19/2009 Lancaster PA Chameleon Club 10/21/2009 Poughkeepsie NY The Chance 10/22/2009 Clifton Park NY Upstate Concert Hall 10/27/2009 Grand Rapids MI The Intersection 10/28/2009 Cleveland OH Peabodys Downunder 10/30/2009 Newport KY Southgate House 10/31/2009 Milwaukee WI Eagles Ballroom 11/3/2009 Saint Paul MN Station 4 11/7/2009 Sauget IL Pops 12/2/2009 Towson MD Recher Theatre 12/4/2009 Camden NJ Susquehanna Bank Center 12/12/2009 Detroit MI The Fillmore Detroit


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Action/Adventure, Documentary
Paul Devlin follows the story of his brother, Mark Devlin PhD, as he leads a tenacious team of scientists hoping to figure out how all the galaxies formed by launching a revolutionary new telescope under a NASA high-altitude balloon. Their adventure takes them from Arctic Sweden to Inuit polar bear country in Canada, where catastrophic failure forces the team to try all over again on the desolate ice in Antarctica. No less than the understanding of the evolution and origins of our Universe is at stake on this exciting escapade that seeks to answer humankind's most basic question, How did we get here? "BLAST!" is about the crazy life of scientists. Their professional obsessions, personal and family sacrifices, and philosophical and religious questioning all give emotional resonance to a spectacular and suspenseful story of space exploration.
Cast: Marie Rex, Barth Netterfield, Jeff Klein, Victor Davison, Mark Devlin
Produced by: Paul Devlin, Claire Missanelli
Directed by: Paul Devlin
Written by: Emily Kagan
Running time: 1hr 14min
Opens: Jun 11, 2009 NY
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subset: commoncrawl


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Under new CEO Satya Nadella, Microsoft is moving quickly. Just a month and three days after debuting the long-awaited Office for iPad app, Microsoft added AirPrint support in an updated version of the software on Tuesday. Word documents can be printed with or without markup and Excel users can choose to print a range, single worksheet or full spreadsheet. The updated software also includes alignment tools in Power Point and AutoFit adjustments for Excel rows and columns.
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Plantable Wise Men Christmas Cards Set
A treasured holiday scene is artistically brought to life in the Plantable Wise Men Christmas Cards Set. A gift on its own, each seed paper holiday card is printed on eco-friendly plantable paper, which is made using post-consumer materials and will grow wildflowers when planted. Everyone on your list is sure to appreciate the sentiment of these lovely plantable Christmas cards.
Read about how plantable paper works.
Card size: 4 1/2 x 6 1/4 inches
Inside message reads: "Wishing you a joyful Christmas season and a happy New Year"
Set of 8 seed cards. Each eco Christmas cards set includes matching white envelopes made using 100% post-consumer waste.
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Old West Scallop Buckaroo HeadstallOld West Style Headstall LH115A
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Old West Star Headstall
Product SKU: LH264LOstar
Price: $119.50
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Once you use this Quality Western Horse Tack, you will use no other! Leather Headstall lined with chap leather and oiled and made from the finest heavy weight double and stitched Hermann Oak Harness leather for a smooth, rich, "broke in" feel. This Headstall is a Browband style in 3/4". There are Rawhide brow keepers and ties at the bit ends. Finished with a beautiful Antique oval Silver Star Concha on the brow.
Our Best Selling Matching Reins are a perfect addition, product # LR269, # LR270, and # LR271.
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Lynyrd Skynyrd Tickets
One of, if not THE most legendary southern rock band of all time, Lynyrd Skynyrd has endured more than many bands could even fathom — and they continue to rock all the more because of it. Check out the complete Lynyrd Skynyrd tour schedule and make your plans to see them when they visit a venue near you. Don't miss your chance to catch Skynyrd live performing together, order your concert tickets today.
Lynyrd Skynyrd Tour Dates and Schedule
Saturday, 8:00 PM
Lincoln City, OR
Tuesday, 7:30 PM
Saratoga, CA
Thursday, 8:00 PM
Jackson, CA
Friday, 7:30 PM
Pomona, CA
Saturday, 8:00 PM
Tucson, AZ
Sunday, 8:00 PM
Scottsdale, AZ
Thursday, 7:30 PM
Sevierville, TN
Friday, 7:30 PM
Nashville, TN
Friday, 7:30 PM
Terre Haute, IN
Saturday, 8:00 PM
Mescalero, NM
How To Buy Lynyrd Skynyrd Tickets
- Select your Lynyrd Skynyrd Tickets from our inventory
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Shipping & Availability When purchasing Lynyrd Skynyrd tickets online, you will be taken to our Lynyrd Skynyrd Tickets page. You will then be able to pick which Lynyrd Skynyrd event you would like to purchase. All tickets listed are seated together. All of our Lynyrd Skynyrd tickets are shipped via Federal Express. Please note that we do not deliver on Saturday unless, that option is specially requested on your order . Our ticket inventory is updated hourly. If for any reason the tickets are no longer available, you will be able to cancel your order or request a different area.


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They didn't dress up as Medgar Evers, Stokley Carmichael, Cornel West, Barack Obama or Dr. Martin Luther King Jr. They didn't conduct themselves to reflect a race of people, who through peaceful protest and intellect, forced a racist nation to acknowledge their human right to dignity. To equality.
That would be an accurate depiction of the majority of black America.
The college students decided for that day they would combine all the negative stereotypes of black Americans into a derogatory caricature and act like ignoramuses in disdain of Dr. King.
The Tau Kappa Epsilon fraternity posted party photos on Instagram wearing oversized basketball jerseys, bandanas, sagging pants, flashing gang signs, drinking out of watermelons with bananas tucked into their waistlines. They were even wretched enough to accompany the party photos with hashtags such as #hood, #ihaveadream, and #blackoutformlk.
The ASU-TKE chapter was recently reinstated as a fraternity after being suspended for a debacle involving more than a dozen TKE frat members assaulting members of rival fraternity Delta Kappa Epsilon in November of 2012.
ASU responded to TKE's MLK Black Party by immediately suspending the chapter's operations and promising "additional action against the individuals involved" because at the time of the party TKE was on social probation and prohibited from having parties.
Three days later, ASU followed through with its vow to punish this wrong by abolishing the TKE chapter's recognition as a fraternity on the ASU campus and is continuing to investigate individual TKE members and other students who attended the party.
The university is not alone in distancing themselves from the actions of a deplorable few. The Tau Kappa Epsilon International fraternity apologized for the actions of its chapter, stating: "TKE does not condone or support any actions by its members that would be defined as racist, discriminatory and/or offensive.
Social events with "party themes" that are defined as such have no place in our fraternity's mission or purpose. It is with embarrassment and regret when a few individuals within our organization make decisions that do not align with the values and principles of TKE"
TKE, established in 1899, is one of the largest college social fraternities in the world, with chapters in almost 300 campuses in North America and more than 265,000 members, most of whom are not racist and a considerable number are black.
What might a national response be if a predominantly black college fraternity threw a JFK Day white party with members and attendants wearing bibbed overalls, drinking Natural Light, flaunting counterfeit crystal meth, and sporting temporary tattoo swastikas?
Would there be more of a public outcry if the hashtags read #redneck, #whiteoutforjfk and #asknotwhatyourcountrycandoforyou?
This could very well incite a renewal of racial tension in America or it can serve as a reminder that an ignorant minority of us still cling to racial sentiments toward men, women, everyone. Where the aftermath of this event takes us is totally up to us.
ASU and TKE both stood steadfast in disapproval of the chapter's actions, ASU answering with quick permanent decisive action and TKE issuing a humble apology for its chapter clarifying in no way do the decisions of an ill-advised few reflect the understanding of the whole.
The ASU-TKE chapter does not represent anyone other than itself and the ignorance should disgrace the members who participated and those members alone. Much more can be said of the ASU-TKE chapter, but why? It has succeeded in making itself irrelevant. Our neighbors are still our neighbors and our friends are still our friends despite ethnicity and/or sexual preference. The majority of us do not share the ASU-TKE chapter's view of our fellow man and we have to be aware of and secure in that fact. As a people we cannot allow hatred to sabotage peace and progress.


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Interpretive Handbook
9059 :
Thrombin Time (Bovine), Plasma
Clinical Information Discusses physiology, pathophysiology, and general clinical aspects, as they relate to a laboratory test
Prolonged clotting times may be associated with a wide variety of coagulation abnormalities including:
-Deficiency or functional abnormality (congenital or acquired) of many of the coagulation proteins
-Deficiency or functional abnormality of platelets
-Specific factor inhibitors
-Acute disseminated intravascular coagulation
-Exogenous anticoagulants (eg, heparin, warfarin)
The prothrombin time and activated partial thromboplastin time are first-order tests for coagulation abnormalities and are prolonged in many disorders. A battery of coagulation tests is often required to determine the cause of prolonged clotting times.
Thrombin catalzyes the transformation of fibrinogen to fibrin (by cleaving fibrinpeptides A and B), which is followed by polymerization of fibrin to form a clot. The thrombin time (TT) test measures the time of clot formation when thrombin is added to citrated plasma. The phospholipid-dependent procoagulant enzyme cascades (intrinsic, extrinsic, and "common" pathway) are bypassed by the addition of exogenous thrombin. Therefore, the TT mainly reflects functions and interactions of solution-phase exogenous thrombin and endogenous fibrinogen.
Useful For Suggests clinical disorders or settings where the test may be helpful
The main utility of the thrombin time test is to detect or exclude the presence of heparin or heparin-like anticoagulants (which act by enhancing antithrombin's inhibition of thrombin and other procoagulant enzymes) when used in conjunction with the reptilase time (RT) in evaluating unexplained prolonged clotting times.
Identifying the cause of a prolonged prothrombin time, activated partial thromboplastin time, or dilute Russell's viper venom time when used in conjunction with the RT and fibrinogen assay
Interpretation Provides information to assist in interpretation of the test results
Prolongation of the thrombin time (TT) is consistent with the presence of heparin-like anticoagulants, hypofibrinogenemia, dysfibrinogenemia, fibrin degradation products, and antibody inhibitors of thrombin. An immeasurably prolonged TT is usually the result of heparin in the specimen or, rarely, the presence of thrombin antibodies or afibrinogenemia.
When the TT test is performed with diluted bovine thrombin to achieve a normal plasma clotting time of about 20 seconds, the TT is capable of detecting unfractionated heparin at a concentration of 0.05 units/mL of heparin.
Other tests useful in interpreting the significance of prolongation of the TT include: reptilase time (RT), human thrombin time, clottable fibrinogen assay, and the fibrin D-dimer assay. These tests are available as components of coagulation profile test panels. As seen in the following table, RT can help distinguish among the various causes of a prolonged TT.
Thrombin Time
Reptilase Time
Hypo- or afibrinogenemia
Ascertain by determination of fibrinogen
Ascertain by specific assay
Heparin or inhibitor of thrombin
Differentiate by human TT and/or heparin assays
Fibrin(ogen) split products (FSP)
Ascertain by FSP or D-dimer assay
Cautions Discusses conditions that may cause diagnostic confusion, including improper specimen collection and handling, inappropriate test selection, and interfering substances
The thrombin time test, by itself, has little diagnostic value and should be interpreted within the context of additional coagulation assays (eg, prothrombin time, activated partial thromboplastin time, and reptilase time).
Reference Values Describes reference intervals and additional information for interpretation of test results. May include intervals based on age and sex when appropriate. Intervals are Mayo-derived, unless otherwise designated. If an interpretive report is provided, the reference value field will state this.
15-23 seconds
Clinical References Provides recommendations for further in-depth reading of a clinical nature
1. Koepke JA: Coagulation testing systems. In Practical Laboratory Hematology. New York, Churchill Livingston, 1991
2. Corriveau DM, Fritsma G: Hemostasis and Thrombosis in the Clinical Laboratory. Philadelphia, JB Lippincott Company, 1988
3. Galanakis DK: Plasma thrombin time and related tests. In Williams Hematology. Fifth edition. New York, McGraw-Hill Book Company, 1995, pp L91-L93
4. Greaves M, Preston FE: Approach to the bleeding patient. In Hemostasis and Thrombosis: Basic Principles and Clinical Practice. Fourth edition. Edited by RW Colman, J Hirsh, VJ Marder, et al. Philadelphia, JB Lippincott Company, 2001, pp 783-837


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William Eggleston in the Real World
In 1976, William Eggleston's hallucinatory, Faulknerian images were featured in the Museum of Modern Art's first one-man exhibition of color photographs. It is rare for an artist of such stature to allow himself to be shown as unguardedly as Eggleston does in Michael Almereyda's intimate portrait. The filmmaker tracks the photographer on trips to Kentucky, Los Angeles and New York, but gives particular attention to downtime in Memphis, Eggleston's home base. The film shows a deep connection between Eggleston's enigmatic personality and his groundbreaking work, and also reveals his parallel commitments as a musician, draftsman and videographer. A sphinx-like renegade, Eggleston at age 65 has become an icon and inspiration to artists worldwide.
Cast: Michael Almereyda, William J. Eggleston
Produced by: Michael Almereyda, Jesse Dylan, Anthony Katagas
Directed by: Michael Almereyda
Written by: Michael Almereyda
Running time: 1hr 25min
Opens: Aug 31, 2005 NY
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Welcome to the Texas Test Administrator Online Training website!
As part of the Texas Education Agency's ongoing efforts to improve security measures in the state's
testing program, the Student Assessment Division has developed Web-based training
modules for test administrators to help ensure that test results are meaningful
and valid. This online training, which currently consists of three modules, is optional
but strongly recommended and is designed to supplement the mandatory training required
of all personnel involved in testing.
This training can be taken individually or
as a group. If the training is completed individually, the user will be able to
obtain a certificate of completion at the end of each module. Select the group training
option if the module will be completed in a group setting.
Once you have completed a training module, you will be given the option to return to this page to select another module.
Module 1 — Active Monitoring
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Module 3 — Proper Handling of Secure Materials
This information will be used ONLY to create, send, and/or retrieve a certificate of completion for this training module.
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text:
Jean-Eric Vergne has blamed a "crazy Lotus guy" for his Bahrain GP exit after a collision left him with a damaged STR9.
Fighting for track position at the start, Vergne was soon seen touring the track with a punctured rear tyre.
The Frenchman was not happy with the situation and told his Toro Rosso team: "crazy Lotus guy. I don't know who it was. Absolutely mental."
He pitted for fresh rubber and returned to the action only to retire laps later as his STR had sustained too much damage.
"It was a bit of a mess at the start in Turn 8 with a lot of cars around me, but while the others were having a poor exit I had a clean one on the outside," he explained.
"When I then found myself next to a Lotus, I got squeezed more and more and when he realized I was about to overtake him anyway, he just closed the door.
"That is why our wheels touched and my car took off, out of control.
"Both rear wing and floor got heavily damaged with a huge loss of aero performance and it was just not possible to continue my race.
"Hopefully bad luck will leave us alone for the next races."
Related Links
Lewis Beats Nico In Team-Mate Thriller
Gallery: Race Day In Bahrain


text:
The event will take place on August 25-26 in the central part of Stockholm, Sweden and holds the sixth round of the 2012 ITU World Triathlon Series, also including the ITU Triathlon Mixed Relay World Championships. A total prize of $170,000 USD is at stake between the two races.
With three months to go to over 1.800 participants have already signed up to the age group race. The race course will be spectacular throughthe beautiful city, circling the Old town and Stockholm Castle.
"The partnership with ITU World Stockholm Triathlon is a great opportunity to create international brand attention and an important step in establishing HEAD Swimming in the Nordic region," says Chris Flodén, responsible for HEAD Swimming Nordic.
Visit: http://stockholm.triathlon.org for more information.


text:
Desktop Skill Ball Game
Portable desk or tabletop arcade game you can play at work or at home.
Have you always wanted to play arcade games while at work, but there was never enough space or money for a full sized version in the office?
The Desktop Skill Ball game is the perfect solution. It fits great on a desk or table, so you can play this carnival classic. Features an automatic ball return. Comes with instruction manual. Imported from China.
Dimensions: 15.38" L x 5.69" W x 4.31" H; Weight: 2.20 lbs.
Desktop Skill Ball Game
Reviewed by 1 customer
- Can Withstand Use
- Easy To Play
- Entertaining
- Fun
- Only 2 Metal Balls
Best Uses
- Family
Comments about Desktop Skill Ball Game:
Got this as a gift. Skeeball at home substitute. It's fun and fills that desire. The spring loaded action that propels the ball is a bit awkward but you just have to get the feel of it.
All in all, a good outlet for that kind of game.
- Was this a gift?:
- Yes
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text:
Fulton County Senior Affirmation Event (Caston High School)
21st Century Scholars who are high school seniors are strongly encouraged to attend a senior affirmation event. At each event, a 21st Century Scholars representative will provide important information about how to activate and maintain eligibility for the 21st Century Scholarship.
This event is open to all 21st Century Scholars who are Caston High School seniors and their parents.
Location: Caston High School, 9815 South State Road 25, Fulton, IN
Date: January 22, 2013
Time: 6:00 – 7:00 p.m.


text:
Does anyone know any good technical schools for welding with a campus i can go to?
I don't care what state it is in. Im actually looking for one out of state to get away from home from my parents for a little bit and go out and explorer and do different things while i learn a trade. There is one an hour away from where i live in another state but im looking around still! But im not sure how to look for a technical school. I go on google and look up welding technical schools and get crap thrown around at me. Im looking for a technical with a campus not a college! So that i don't have to test into the school id rather just pay and do and learn, and if needed i cn always find a tutor to help me. Because i know at a technical school you have to take curriculum courses and im fine with that.
Results 1 to 3 of 3
11-03-2012, 12:51 PM #1Junior Member
- Join Date
- Oct 2012
- Posts
- 6
I Need help finding a technical school,
It depends what process you are interested in. I chose the aerospace welding path, and have been very happy with it.
Myself, my wife, my son, and my daughter all went the community college route and are happy we did. For reference College of the Canyons in Southern California has a top notch 2 year welding program.
There is so much more to welding than burning rod. Bluepring reading, metalurgy, technical math, and business are a benefit as well.
Are you getting any financial help?Nothing welded, Nothing gained
Miller Dynasty700DX
3 ea. Miller Dynasty350DX
Miller Dynasty200DX
ThermalArc 400 GTSW
MillerMatic200 with spoolgun
Lincoln SP-170T
Linde UCC305 (sold 2011)
Hypertherm 1250
Hypertherm 800
PlasmaCam CNC cutter
Fadal Toolroom CNC Mill
SiberHegner CNC Mill
2 ea. Bridgeport
LeBlond 15" Lathe
Haberle 18" Cold Saw
Doringer 14" Cold Saw
6 foot x 12 foot Mojave granite
11-08-2012, 07:35 AM #3Senior Member
- Join Date
- Nov 2005
- Posts
- 117
techincal school
try TSTC in WAco texas or in Harlingen Texas been to both looking for welders for my company I was very impressed with the quality of Education ,but it all depends on the student also.
Hope it helps


text: Brace yourselves…I'm about to introduce you to one of the most dramatic makeovers EVER! Newlyweds Lindsay & Drew had an unsightly built in shelf and a bed frame that had been damaged by a dog with a bad chewing habit. Thanks to lots of imagination and DIY spirit, Lindsay and Drew made lemonade from their lemons.


text:
|Publication number
|Publication type
|Application number
|Publication date
|Sep 3, 2009
|Filing date
|Mar 17, 2009
|Priority date
|Apr 4, 1997
|Also published as
|Publication number
|Glenn J. Leedy
|Original Assignee
|Leedy Glenn J
|Export Citation
|BiBTeX, EndNote, RefMan
|Patent Citations (3), Referenced by (28), Classifications (29), Legal Events (4)
|External Links: USPTO, USPTO Assignment, Espacenet
1. Field of the Invention
The present invention relates to stacked integrated circuit memory.
2. State of the Art
Manufacturing methods for increasing the performance and decreasing the cost of electronic circuits, nearly without exception, are methods that increase the integration of the circuit and decrease its physical size per equivalent number of circuit devices such as transistors or capacitors. These methods have produced as of 1996 microprocessors capable of over 100 million operations per second that cost less than $1,000 and 64 Mbit DRAM circuits that access data in less than 50 ns and cost less than $50. The physical size of such circuits is less than 2 cm. Such manufacturing methods support to a large degree the economic standard of living in the major industrialized countries and will most certainly continue to have significant consequences in the daily lives of people all over the world.
Circuit manufacturing methods take two primary forms: process integration and assembly integration. Historically the line between these two manufacturing disciplines has been clear, but recently with the rise in the use of MCMs (Multi-Chip Modules) and flip-chip die attach, this clear separation may soon disappear. (The predominate use of the term Integrated Circuit (IC) herein is in reference to an Integrated Circuit in singulated die form as sawed from a circuit substrate such as s semiconductor wafer versus, for example, an Integrated Circuit in packaged form.) The majority of ICs when in initial die form are presently individually packaged, however, there is an increasing use of MCMs. Die in an MCM are normally attached to a circuit substrate in a planar fashion with conventional IC die I/O interconnect bonding methods such as wire bonding, DCA (Direct Chip Attach) or FCA (Flip-Chip Attach).
Integrated circuit memory such as DRAM, SRAM, flash EPROM, EEPROM, Ferroelectric, GMR (Giant MagnetoResistance), etc. have the common architectural or structural characteristic of being monolithic with the control circuitry integrated on the same die with the memory array circuitry. This established (standard or conventional) architecture or circuit layout structure creates a design trade-off constraint between control circuitry and memory array circuitry for large memory circuits. Reductions in the fabrication geometries of memory cell circuitry has resulted in denser and denser memory ICs, however, these higher memory densities have resulted in more sophisticated control circuitry at the expense of increased area of the IC. Increased IC area means at least higher fabrication costs per IC (fewer ICs per wafer) and lower IC yields (fewer working ICs per wafer), and in the worst case, an IC design that cannot be manufactured due to its non-competitive cost or unreliable operation.
As memory density increases and the individual memory cell size decreases more control circuitry is required. The control circuitry of a memory IC as a percentage of IC area in some cases such as DRAMs approaches or exceeds 40%. One portion of the control circuitry is the sense amp which senses the state, potential or charge of a memory cell in the memory array circuitry during a read operation. The sense amp circuitry is a significant portion of the control circuitry and it is a constant challenge to the IC memory designer to improve sense amp sensitivity in order to sense ever smaller memory cells while preventing the area used by the sense amp from becoming too large.
If this design constraint or trade-off between control and memory circuits did not exist, the control circuitry could be made to perform numerous additional functions, such as sensing multiple storage states per memory cell, faster memory access through larger more sensitive sense amps, caching, refresh, address translation, etc. But this trade-off is the physical and economic reality for memory ICs as they are presently made by all manufacturers.
The capacity of DRAM circuits increases by a factor of four from one generation to the next; e.g. 1 bit, 4 bit, 16 Mbit and 64 Mbit DRAMs. This four times increase in circuit memory capacity per generation has resulted in larger and larger DRAM circuit areas. Upon introduction of a new DRAM generation the circuit yields are too low and, therefore, not cost effective for high volume manufacture. It is normally several years between the date prototype samples of a new DRAM generation are shown and the date such circuits are in volume production.
Assembling die in a stacked or three dimensional (3D) manner is disclosed in U.S. Pat. No. 5,354,695 of the present inventor, incorporated herein by reference. Furthermore, assembling die in a 3D manner has been attempted with regard to memory. Texas Instruments of Dallas Tex., Irvine Sensors of Costa Mesa Calif. and Cubic Memory Corporation of Scotts Valley Calif. have all attempted to produce stacked or 3D DRAM products. In all three cases, conventional DRAM circuits in die form were stacked and the interconnect between each DRAM in the stack was formed along the outside surface of the circuit stack. These products have been available for the past several years and have proved to be too expensive for commercial applications, but have found some use in space and military applications due to their small physical size or footprint.
The DRAM circuit type is referred to and often used as an example in this specification, however, this invention is clearly not limited to the DRAM type of circuit. Undoubtedly memory cell types such as EEPROMs (Electrically Erasable Programmable Read Only Memories), flash EPROM, Ferroelectric, GMR Giant Magneto Resistance or combinations (intra or inter) of such memory cells can also be used with the present Three Dimensional Structure (3DS) methods to form 3DS memory devices.
The present invention furthers, among others, the following objectives:
1. Several-fold lower fabrication cost per megabyte of memory than circuits conventionally made solely with monolithic circuit integration methods.
2. Several-fold higher performance than conventionally made memory circuits.
3. Many-fold higher memory density per IC than conventionally made memory circuits.
4. Greater designer control of circuit area size, and therefore, cost.
5. Circuit dynamic and static self-test of memory cells by an internal controller.
6. Dynamic error recovery and reconfiguration.
7. Multi-level storage per memory cell.
8. Virtual address translation, address windowing, various address functions such as indirect addressing or content addressing, analog circuit functions and various graphics acceleration and microprocessor functions.
The present 3DS memory technology is a stacked or 3D circuit assembly technology. Features include:
1. Physical separation of the memory circuits and the control logic circuit onto different layers;
2. The use of one control logic circuit for several memory circuits;
3. Thinning of the memory circuit to less than about 50 μm in thickness forming a substantially flexible substrate with planar processed bond surfaces and bonding the circuit to the circuit stack while still in wafer substrate form; and
4. The use of fine-grain high density inter layer vertical bus connections.
The 3DS memory manufacturing method enables several performance and physical size efficiencies, and is implemented with established semiconductor processing techniques. Using the DRAM circuit as an example, a 64 Mbit DRAM made with a 0.25 μm process could have a die size of 84 mm2, a memory area to die size ratio of 40% and a access time of about 50 ns for 8 Mbytes of storage; a 3DS DRAM IC made with the same 0.25 μm process would have a die size of 18.6 mm2, use 17 DRAM array circuit layers, a memory area to die size ratio of 94.4% and an expected access time of less than 10 ns for 64 Mbytes of storage. The 3DS DRAM IC manufacturing method represents a scalable, many-fold reduction in the cost per megabyte versus that of conventional DRAM IC manufacturing methods. In other words, the 3DS memory manufacturing method represents, at the infrastructure level, a fundamental cost savings that is independent of the process fabrication technology used.
The present invention may be further understood from the following description in conjunction with the appended drawing. In the drawing:
Referring to
The pattern 107 a, 107 b, etc. in the bond and interconnect layers 105 a, 105 b, etc. defines the vertical interconnect contacts between the integrated circuit layers and serves to electrically isolate these contacts from each other and the remaining bond material; this pattern takes the form of either voids or dielectric filled spaces in the bond layers.
The 3DS memory stack is typically organized as a controller circuit 101 and some number of memory array circuit layers 103, typically between nine (9) and thirty-two (32), but there is no particular limit to the number of layers. The controller circuit is of nominal circuit thickness (typically 0.5 mm or greater), but each memory array circuit layer is a thinned and substantially flexible circuit with net low stress, less than 50 μm and typically less than 10 μm in thickness. Conventional I/O bond pads are formed on a final memory array circuit layer for use with conventional packaging methods. Other metal patterns may be used such as insertion interconnection (disclosed in U.S. Pat. Nos. 5,323,035 and 5,453,404 of the present inventor), DCA (Direct Chip Attach) or FCA (Flip-Chip Attach) methods.
Further, the fine grain inter-layer vertical interconnect can be used for direct singulated die bonding between a 3DS memory die and a conventional die (wherein the conventional die could be the controller circuit as shown in
As shown in
Fine-grain busing vertically connects the controller independently to each memory array layer such that the controller can provide drive (power) or enable signals to any one layer without affecting the state of any of the other layers. This allows the controller to test, read or write independently each of the memory circuit layers.
One implementation of a 4:1 gate-line bus muliplexer 500 is shown in
Referring again to
Note that at the memory layer level, each memory block 301 is electrically isolated from every other memory block 301. Accordingly, the yield probability for each memory block is independent.
Additional read/write ports can be added as can additional gate-line vertical interconnections; additional vertical interconnection can be used in a redundant manner to improve vertical interconnect yield. The 3DS memory circuit can be designed to have one or more data read and write bus port interconnections. Referring to
As an example, the overhead of the vertical interconnect shown in
The 3DS memory device decouples control functions that normally would be found adjacent the memory cells of monolithic memory circuits and segregates them to the controller circuit. The control functions, rather than occurring on each memory array layer as in conventional memory ICs, occur only once in the controller circuit. This creates an economy by which several memory array layers share the same controller logic, and therefore, lowers the net cost per memory cell by as much as a factor of two versus conventional memory design.
The segregation of the control functions to a separate controller circuit allows more area for such functions (i.e., an area equal to the area one or several of the memory array blocks). This physical segregation by function also allows fabrication process segregation of the two very different fabrication technologies used for the control logic and the memory array, again realizing additional fabrication cost savings versus the more complicated combined logic/memory fabrication process used for conventional memory. The memory array can also be fabricated in a process technology without consideration of the process requirements of control logic functions. This results in the ability to design higher performance controller functions at lower cost than is the case with present memory circuits. Furthermore, the memory array circuit can also be fabricated with fewer process steps and nominally reduce memory circuit fabrication costs by 30% to 40% (e.g., in the case of a DRAM array, the process technology can be limited to NMOS or PMOS transistors versus CMOS).
Hence, although bonding of sufficiently planar surfaces of a memory controller substrate and a memory array substrate using thermal diffusion metal bonding is preferred, in the broader aspects of the present invention, the invention contemplates bonding of separate memory controller and memory array substrates by any of various conventional surface bonding methods, such as anisotropically conductive epoxy adhesive, to form interconnects between the two to provide random access data storage.
Referring to
The size of the 3DS memory circuit die is not dependent on the present constraint of containing the necessary number of memory cells and control function logic on one monolithic layer. This allows the circuit designer to reduce the 3DS circuit die size or choose a die size that is more optimal for the yield of the circuit. 3DS memory circuit die size is primarily a function of the size and number of memory array blocks and the number of memory array layers used to fabricate the final 3DS memory circuit. (The yield of a nineteen (19) layer, 0.25 μm process 3DS DRAM memory circuit may be shown to be greater than 90% as described below.) This advantage of selecting the 3DS circuit die size enables an earlier first production use of a more advanced process technology than would normally be possible for conventional monolithic circuit designs. This, of course, implies additional cost reductions and greater performance over the conventional memory circuits.
There are two principal fabrication methods for 3DS memory circuits. The two 3DS memory fabrication methods, however, have a common objective which is the thermal diffusion metal bonding (also referred to as thermal compression bonding) of a number of circuit substrates onto a rigid supporting or common substrate which itself may optionally also be a circuit component layer.
The supporting or common substrate can be a standard semiconductor wafer, a quartz wafer or a substrate of any material composition that is compatible with the processing steps of the 3DS circuit, the operation of the circuit and the processing equipment used. The size and shape of the supporting substrate is a choice that best optimizes available manufacturing equipment and methods. Circuit substrates are bonded to the supporting substrate and then thinned through various methods. Circuit substrates may be formed on standard single crystal semiconductor substrates or as polysilicon circuits formed on an appropriate substrate such as silicon or quartz. Polysilicon transistor circuits have the important cost saving option of incorporating a parting layer (film) that allows the substrate upon which the polysilicon circuits are formed to be released and reused. Polysilicon transistor or TFTs (Thin Film Transistor) devices are widely used, and need not be made solely from silicon.
The various circuit layers of the 3DS memory circuit are bonded together by use of thermal diffusion of two metal surfaces, typically aluminum. The surface of the circuits to be bonded are smooth and sufficiently planar as is the case with the surface of an unprocessed semiconductor wafer or a processed semiconductor wafer that has been planarized with the CMP (Chemical Mechanical Processing) method with a surface planarity of less than 1 μm and preferably less than 1,000 Å over at least the area of the surface of the circuit (formed on the substrate) to be bonded. The metal bonding material on the surfaces of the circuits to be bonded are patterned to be mirror images of each other and to define the various vertical interconnect contacts as indicated in
The thermal diffusion bonding of the circuit layers takes place preferably in an equipment chamber with controlled pressure and atmospheric components such as N2 with little H2O and O2 content. The bonding equipment aligns the patterns of the substrates to be bonded, presses them together with a set of programmed pressures and at one or more temperatures for a period of time as required by the type of metal used as the bonding material. The thickness of the bonding material is nominally in a range of 500 Å to 15,000 Å or greater with a preferred thickness of 1,500 Å. The initial bonding of the substrates is preferably done at lower than standard pressure such as a negative pressure between 1 torr and 740 torr depending on the design of the bond pattern. This can leave an interior negative pressure between the bonding surfaces once external atmospheric pressure is returned which further assists in the formation of the bond and enhances the reliability of the bond.
The preferred bonding material is pure aluminum or an alloy of aluminum, but it is not limited to aluminum and may include, for example, such metals as Sn, Ti, In, Pb, Zn, Ni, Cu, Pt, Au or alloys of such metals that provide acceptable surface bond diffusion capabilities at acceptable temperatures and forming periods. The bonding material is not limited to metal, and could be a combination of bonding materials, such as highly conductive polysilicon, some of which are non-conducting such as silicon dioxide, and the foregoing exemplary types of bond material choices should not be considered to be limitations on how the circuit layers can be bonded.
In the case where metal bond materials form a native surface oxide that either inhibits the forming of a satisfactory bond or may increase the resistance in the vertical interconnections formed by the bond, the oxide should be removed. The bonding equipment provides an oxide reduction capability such that bonding surfaces of the bond material are rendered without native surface oxide. The methods of forming gas atmospheres for the reduction of surface oxides are well known, and there arc other methods for removing the native oxide such as sputter etching, plasma etching or ion mill etching. In the case where aluminum is used as the bonding material, it is preferred that the thin native aluminum oxide film of approximately 40 Å on the bonding surfaces be removed prior to bonding.
The thinned (substantially flexible) substrate circuit layers of the 3DS memory circuit are typically memory array circuits, however, the thinned substrate circuit layers are not limited to memory circuits. Other circuit layer types can be controller circuits, non-volatile memory such as EEPROM, additional logic circuitry including microprocessor logic and application specific logic functions such as those that support graphic or database processing, etc. The selection of such circuit layer types follows from the functional requirements of the design of the circuit and is not limited by the 3DS memory fabrication process.
The thinned (substantially flexible) substrate circuit layers are preferably made with dielectrics in low stress (less than 5�108 dynes/cm2) such as low stress silicon dioxide and silicon nitride dielectrics as opposed to the more commonly used higher stress dielectrics of silicon oxide and silicon nitride used in conventional memory circuit fabrication. Such low stress dielectrics are discussed at length in U.S. Pat. No. 5,354,695 of the present inventor, incorporated herein by reference. The use of dielectrics with conventional stress levels could be used in the assembly of a 3DS DRAM circuit, however, if more than a few layers comprise the stacked assembly, each layer in the assembly will have to be stress balanced so that the net stress of the deposited films of a layer is less than 5�108 dynes/cm2. The use of intrinsically low stress deposited films is the preferred method of fabrication versus the use of the method where the stress of individually deposited films are not equal but are deposited to create a net balanced lower stress.
Method A, 3DS Memory Device Fabrication Sequence
This fabrication sequence assumes that several circuit layers will be bonded to a common or support substrate and subsequently thinned in place. An example of a resulting 3DS memory circuit is shown in
1. Align and bond to the common substrate the topside of a second circuit substrate.
2A. Grind the backside or exposed surface of the second circuit substrate to a thickness of less than 50 μm and then polish or smooth the surface. The thinned substrate is now a substantially flexible substrate.
Optionally an etch stop may be incorporated in the second substrate from less than a micron to several microns below the semiconductor surface prior to device fabrication. This etch stop can be an epitaxially formed film such as GeB (described in U.S. Pat. Nos. 5,354,695 and 5,323,035 of the present inventor, incorporated herein by reference) or a low density implanted layer of O2 or N2 to form a buried oxide or nitride barrier etch stop layer just below the device layer on the topside of the second substrate. After a preliminary grinding of a significant portion of the backside of the substrate, the remaining portion of the backside of the second substrate is then selectively etched in a chemical bath which stops on the surface of the eptiaxial or implanted layer. Subsequent polishing and RIE steps as necessary can then be used to complete the thinning of the second substrate.
Alternately, a parting layer such as H2 implanted into the topside surface of the second substrate prior to device fabrication can be used with a thermal step to crack off the majority of the backside of the second substrate, allowing its reuse.
2B. The second substrate may alternatively be a circuit formed of polysilicon transistors or TFTs over a parting layer such as aluminum, titanium, A1As, KBr, etc. which can be activated by a specific chemical release agent. The backside of the second substrate is then removed upon activating (dissolving) the release layer and followed as needed by interconnect semiconductor processing steps.
3. Process the thinned backside of the second substrate to form vertical interconnections such as that shown in
Referring more particularly to
After bonding and thinning of the backside of the second substrate to about 1-8 μm of silicon (or other semiconductor) substrate 415, feed-throughs 417 are then formed in registration with the contacts 403. A passivation layer 419 and contacts 421 are then formed. The contacts 421 may be formed so as to form a mirror image of the contacts 413, allowing for the bonding of further wafers.
4. If another circuit layer is to be bonded to the 3DS circuit stack, steps 1-3 are repeated.
5A. The circuits of the finished 3DS memory substrate are then conventionally sawed into die (singulated), resulting in a circuit of the type shown in
5B. The circuits of the finished 3DS memory substrate are then conventionally sawed and then individually aligned and thermal diffusion bonded (metal pattern down) to the surface of a second (conventional IC) die or MCM substrate in a manner similar to that used in the bonding of the circuit substrates of step 1 above. (The conventional die or MCM substrate may have a larger area than the 3DS memory substrate and may include a graphics controller, video controller or microprocessor, such that the 3DS becomes embedded as part of another circuit.) This final bonding step typically incorporates a fine-grain interconnect between the 3DS memory circuit and the die or MCM substrate, but could also use a conventional interconnect pattern. Further, a 3DS memory circuit can be bonded face up to a conventional IC in die form or MCM substrate and wire bonding used to form conventional I/O interconnections.
This fabrication sequence assumes that a circuit substrate will first be bonded to a transfer substrate, thinned and then bonded to a common substrate as a layer of the circuit stack. The transfer substrate is then released. This method has the advantage over Method A of allowing substrates to be thinned prior to being bonded to the final circuit stack and allows for simultaneous thinning and vertical interconnect processing of substrate circuit layers.
1. Bond to a transfer substrate a second circuit substrate using a release or parting layer. A transfer substrate may have high tolerance parallel surfaces (TTV or Total Thickness Variance of less than 1 μm) and may be perforated with an array of small holes to assist the parting process.
The parting layer can be a blanket deposition of a bonding metal. Precise alignment of the surfaces is not required.
2. Perform step 2A or 2B of Method A.
3. Process the backside of the second substrate to form interconnections with the bonded topside surface of the second substrate as shown in
4. Bond the second circuit to a common or support substrate (3DS stack) and release the transfer substrate by activating the parting layer between it and the second circuit.
5. Process the now exposed topside of the second substrate to form interconnections for subsequent substrate bonding or a terminal pattern for conventional I/O bonding (wire bonding) pad pattern, a pattern for thermal diffusion bonding of the 3DS memory circuit to another die (either another 3DS circuit or a conventional die), or a pattern for conventional insertion interconnect, DCA (Direct Chip Attach) or FCA (Flip-Chip Attach). If another circuit layer is to be bonded to the 3DS circuit stack, steps 1 through 4 are repeated.
6. Perform step 5A or 5B of Method A.
3DS Memory Device Yield Enhancement Methods
The 3DS circuit may be considered a vertically assembled MCM (Multi-Chip Module) and as with an MCM the final yield is the product of the yield probabilities of each component circuit (layer) in the completed 3DS circuit. The 3DS circuit uses several yield enhancement methods that are synergistic in their combined usage within a single memory IC. The yield enhancement methods used in the 3DS memory circuit include small memory array block size, memory array block electrical isolation through physically unique or separate vertical bus interconnections, intra memory array block gate-line sparing, memory array layer sparing (inter-block gate-line sparing), controller sparing and ECC (Error Correcting Codes). The term sparing is used to mean substitution by a redundant element.
The selected size of the memory array block is the first component in the yield equation for the 3DS memory circuit. Each memory array block is individually (uniquely) accessed and powered by the controller circuit and is physically independent of each and every other memory array block including those on the same memory array layer in addition to those on a different memory array layer. The size of the memory array block is typically less than 5 mm2 and preferably less than 3 mm2, but is not limited to a specific size. The size of memory array block, the simplicity of its NMOS or PMOS fabrication process and its physical independence from each of the other memory array blocks, for nearly all production IC processes, provides a conservatively stated nominal yield of greater than 99.5%. This yield assumes that most point defects in the memory array block such as open or shorted interconnect lines or failed memory cells can be spared (replaced) from the intra-block or inter-block set of redundant gate-lines. Major defects in a memory array block which render the complete memory array block unusable result in the complete sparing of the block from a redundant memory array layer or the rejection of the 3DS circuit.
In the example of a 3DS DRAM circuit the yield of a stack of memory array blocks is calculated from the yield equation Ys=((1−(1−PY)2)n)b, where n is the number DRAM array layers, b is the number of blocks per DRAM array and Py is the effective yield (probability) of a DRAM array block less than 3 mm2 in area. Assuming a DRAM array block redundancy of 4% for gate-lines in the DRAM array block lines and one redundant DRAM array layer, and assuming further that the number of blocks per layer is 64, the number of memory array layers in the stack is 17 and the effective value for Py is 0.995, then the stack yield Ys for the complete memory array (including all memory array block stacks) is 97.47%.
The Ys memory array stack yield is then multiplied by the yield of the controller Yc. Assuming a die size of less than 50 mm2, a reasonable Yc for a controller fabricated from a 0.5 cm BiCMOS or mixed signal process would be between 65% and 85%, giving a net 3DS memory circuit yield of between 63.4% and 82.8%. If a redundant controller circuit layer is added to the 3DS memory stack, the yield probabilities would be between 85.7% and 95.2%.
The effective yield of a memory array block can be further increased by the optional use of ECC logic. ECC logic corrects data bit errors for some group size of data bits. The syndrome bits necessary for the operation of ECC logic would be stored on redundant gate-lines of any of the memory array layers in a vertically associated block stack. Further, if necessary, in order to accommodate the storage of ECC syndrome bits, additional memory array layers could be added to the circuit.
As compared to a conventional memory circuit, the 3DS memory controller circuit can have various advantageous capabilities due the additional area available for controller circuitry and the availability of various mixed signal process fabrication technologies. Some of these capabilities are self-test of memory cells with dynamic gate-line address assignment, virtual address translation, programmable address windowing or mapping, ECC, data compression and multi-level storage.
Dynamic gate-line address assignment is the use of programmable gates to enable the layer and gate-line for a read/write operation. This allows the physical order of memory storage to be separate or different from the logical order of stored memory.
The testing of each generation of memory devices has resulted in significantly increased test costs. The 3DS memory controller reduces the cost of testing by incorporating sufficient control logic to perform an internal test (self-test) of the various memory array blocks. Circuit testing in the conventional ATE manner is required only for verification of controller circuit functions. The scope of the internal test is further extended to the programmable (dynamic) assignment of unique addresses corresponding to the various gate-lines of each memory array block on each layer. Self-test capability of the 3DS controller circuit can be used anytime during the life of the 3DS memory circuit as a diagnostic tool and as a means to increase circuit reliability by reconfiguring (sparing) the addresses of gate-lines that fail after the 3DS memory circuit is in use in a product.
ECC is a circuit capability that, if included in the controller circuit, can be enabled or disabled by a programming signal or made a dedicated function.
Data compression logic will allow the total amount of data that can be stored in the 3DS memory array to be increased. There are various generally known data compression methods available for this purpose.
Larger sense amps allow greater dynamic performance and enable higher speed read operations from the memory cells. Larger sense amps are expected to provide the capability to store more than one bit (multi-level storage) of information in each memory cell; this capability has already been demonstrated in non-volatile memory circuits such as flash EPROM. Multi-level storage has also been proposed for use in the 4 Gbit DRAM generation circuits.
It will be appreciated by those of ordinary skill in the art that the invention can be embodied in other specific forms without departing from the spirit or essential character thereof. The presently disclosed embodiments are therefore considered in all respects to be illustrative and not restrictive. The scope of the invention is indicated by the appended claims rather than the foregoing description, and all changes which come within the meaning and range of equivalents thereof are intended to be embraced therein.
|Cited Patent
|Filing date
|Publication date
|Mar 17, 1989
|Jul 3, 1990
|Fujitsu Limited
|Three-dimensional integrated circuit and manufacturing method thereof
|Dec 26, 1989
|Sep 3, 1991
|Motorola, Inc.
|Pad array carrier IC device using flexible tape
|Apr 8, 1992
|Oct 11, 1994
|Leedy Glenn J
|Membrane dielectric isolation IC fabrication
|Citing Patent
|Filing date
|Publication date
|Apr 13, 2007
|Nov 9, 2010
|Tessera, Inc.
|Edge connect wafer level stacking
|Jun 20, 2008
|Mar 8, 2011
|Tessera, Inc.
|Reconstituted wafer level stacking
|Dec 28, 2006
|May 31, 2011
|Tessera, Inc.
|Stacked packages with bridging traces
|Mar 25, 2010
|Feb 14, 2012
|International Business Machines Corporation
|Method of forming a multi-chip stacked structure including a thin interposer chip having a face-to-back bonding with another chip
|Feb 1, 2010
|Apr 17, 2012
|International Business Machines Corporation
|Method of making 3D integrated circuits
|Jan 26, 2010
|Jul 31, 2012
|International Business Machines Corporation
|Reliability enhancement of metal thermal interface
|Jun 1, 2010
|Jul 31, 2012
|International Business Machines Corporation
|Semiconductor article having a through silicon via and guard ring
|Nov 16, 2009
|Aug 7, 2012
|International Business Machines Corporation
|Configurable interposer
|Nov 6, 2012
|International Business Machines Corporation
|Electromigration immune through-substrate vias
|Jan 14, 2010
|Mar 19, 2013
|International Business Machines Corporation
|Three dimensional integration with through silicon vias having multiple diameters
|Nov 11, 2010
|Apr 2, 2013
|International Business Machines Corporation
|Structure and method to fabricate a body contact
|Jan 14, 2010
|Apr 9, 2013
|International Business Machines Corporation
|Three dimensional integration and methods of through silicon via creation
|Apr 9, 2012
|Jun 4, 2013
|Micron Technology, Inc.
|Memory devices and formation methods
|Mar 16, 2012
|Jul 23, 2013
|International Business Machines Corporation
|Three dimensional integration and methods of through silicon via creation
|Jul 21, 2010
|Jul 23, 2013
|International Business Machines Corporation
|Metal-contamination-free through-substrate via structure
|Jan 10, 2011
|Oct 1, 2013
|International Business Machines Corporation
|Alignment marks to enable 3D integration
|Nov 9, 2009
|Oct 15, 2013
|International Business Machines Corporation
|Integrated decoupling capacitor employing conductive through-substrate vias
|Mar 16, 2012
|Oct 29, 2013
|International Business Machines Corporation
|Three dimensional integration and methods of through silicon via creation
|Apr 26, 2013
|Nov 19, 2013
|International Business Machines Corporation
|Three dimensional integration and methods of through silicon via creation
|May 7, 2013
|May 20, 2014
|Micron Technology, Inc.
|Memory devices and formation methods
|Jun 6, 2012
|Jun 24, 2014
|International Business Machines Corporation
|Configurable interposer
|Aug 26, 2013
|Jul 22, 2014
|International Business Machines Corporation
|Integrated decoupling capacitor employing conductive through-substrate vias
|Jan 24, 2013
|Sep 16, 2014
|International Business Machines Corporation
|Structure and method to fabricate a body contact
|Jan 17, 2013
|May 12, 2015
|International Business Machines Corporation
|Through silicon via in n+ epitaxy wafers with reduced parasitic capacitance
|Jun 11, 2013
|Jun 2, 2015
|Tessera, Inc.
|Off-chip vias in stacked chips
|Aug 12, 2014
|Jul 21, 2015
|Glenn J Leedy
|Three dimension structure memory
|Dec 3, 2008
|Nov 4, 2010
|Kolo Technologies, Inc
|CMUT Packaging for Ultrasound System
|Apr 4, 2011
|Oct 13, 2011
|Mosaid Technologies Incorporated
|Semiconductor memory device having a three-dimensional structure
|U.S. Classification
|365/51, 365/63, 365/200, 365/201, 365/174
|International Classification
|Cooperative Classification
|European Classification
|Nov 10, 2014
Owner name: ELM TECHNOLOGY CORPORATION, CALIFORNIA
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:LEEDY, GLENN J;REEL/FRAME:034135/0627
Effective date: 20141110
|Nov 20, 2014
Owner name: ELM TECHNOLOGY CORPORATION, CALIFORNIA
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:LEEDY, GLENN J;REEL/FRAME:034221/0916
Effective date: 20141120
|Nov 25, 2014
Owner name: 3DS IP HOLDINGS LLC, CALIFORNIA
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:ELM TECHNOLOGY CORPORATION;REEL/FRAME:034265/0871
Effective date: 20141108
|Nov 26, 2014
Owner name: ELM 3DS INNOVATONS, LLC, CALIFORNIA
Free format text: CHANGE OF NAME;ASSIGNOR:3DS IP HOLDINGS LLC;REEL/FRAME:034476/0994
Effective date: 20141120


text:
SAVE Grill Alert® 3-Piece Grill Gift Set
With Grill Brush and Grill Light
Grill like a pro with our best accessories.
- The Grill Alert lets you know when your food is grilled to perfection
- Our Grill Brush powers away grease and grime without harsh chemicals
- Weather-resistant Handle-Mount Grill Light lets you BBQ at night and any time during the year
Worried about overcooking that thick steak? Not to worry. Just insert the stainless steel probes into the center of the meat, select the type of meat you're cooking and how you'd like it done (Rare, Medium Rare, Medium or Well Done) and walk away. That's all you have to do—a voice prompt will alert you when your entree is 'Almost Ready' and 'Ready.'
Our Motorized Grill Brush is the ultimate power tool for your grill.
Our grill brush has a sprayer for steam cleaning and a heavy-duty motor to power away grease and grime–all without scrubbing or chemicals. Push-button steam cleaning softens built up residue on your grill. So instead of elbow grease, let our dual brass-bristle brushes do the work for you.
Our Grill Light takes the guesswork out of your outdoor cuisine.
See what's ready and what needs more time, while finding that pesky spatula. And it's water-resistant, so you can leave it mounted all year long.
The perfect gift for the chef in your life—order the Grill Alert 3-Piece Set from Brookstone today!
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text:
- Independent
- The Enterprise
- The Recorder
Two individuals have been released from the hospital after a deck collapsed in Chesapeake Beach on Wednesday.
The deck collapsed in the 3000 block of Cox Road in Chesapeake Beach just after 7 p.m. Wednesday, Calvert County Sheriff's Office Lt. Steve Jones said Friday.
Jones said he suspects the group of 10 people who were standing on the deck, located on the second story of the house, were participating in Fourth of July festivities and the structure could not support the weight.
Two individuals sustained non-life threatening injuries, were stabilized and released from the hospital, Jones said, adding that the sheriff's office responded with personnel because deputies were close by for the Chesapeake Beach fireworks show Wednesday night.
The sheriff's office is not investigating the situation, but Jones said he believes the structural component of the house will be investigated as a result of the incident.


text:
Nb: infants must be under the age of 2 and
children must be under the age of 12 at the time of
The Chalet Emile is perfect for a family or small group of friends, occupying the entire ground floor of the building. It is a spacious, light and modern chalet and is near the piste - skiers are within 50 metres of the piste that runs behind the chalet. There is a flat screen TV, DVD player and WiFi access in the lounge and all bedrooms have en suite facilities and are spacious and light.
Chalet Emile - sleeps 6: (room numbers in brackets)ground floor: Large living area. 3 twin bedrooms with en suite bath and WC (1,2 & 3).
Iglu acts as a travel agent for disclosed principals/tour operators, further details
of which will be made available at the time of booking. Your holiday contract will
be bound by the tour operators terms and conditions.
Prices are shown for a basic room or unit, can be subject to change and are indicative
until time of booking. Please call on 020 8544 7114 for prices for other travel
and room options for this property.
Prices shown are per person per week based on maximum occupancy. Descriptions and
quality ratings are provided by the Tour Operator (or one of the Tour Operators
where similar holidays are offered by more than one supplier). We reserve the right
to make minor adjustments to the description or rating based on staff and customer
feedback. For payments by credit card, a 2.5% credit card charge (4% for AMEX) will
be added to your invoice. If you pay by a UK issued debit card, there is no charge.
All bookings are subject to a £5 per person Passenger Admin Fee charged by Iglu.com.


text:
Up 44 this week
Anne Hathaway
Anne Hathaway was born in Brooklyn, New York, to Kathleen Ann (McCauley), an actress, and Gerald Thomas Hathaway, a lawyer, both originally from Philadelphia. She is of mostly Irish descent, along with English, German, and French. Her first major role came in the short-lived television series Get Real (1999). She gained widespread recognition for ... See full bio »
More at IMDbPro » Contact Info: View agent, manager, publicist and legal
Represent Anne Hathaway? Add or change photos


text:
The Community of Disc Golfers and About All Things Disc Golf
Views: 228
at least one full round a week.. usually 2
I throw in some form or another everyday. Get in 9 holes 2 or 3 times a week. I play about 4 or 5 full rounds a week.
Until this last year I averaged about 5 times per week, year round, for the past 17 years (by now I should be good). With advancing age my body can't put up with it anymore so I'm down to 3 or 4 times a week and I seldom play multiple rounds during the same day except tournaments. I can feel the difference and it helps.
Between playing holes and practicing, playing holes is much easier. Practicing is many more throws per time period.
I have been playing, LATELY, about 5 days per week. I practice Putting EVERYDAY THOUGH, as per Mark Ellis. He says it will make me better...... :)
One or two days a week but I'll play 2-3 rounds each time I go out. Also, I'm trying to get back into field practice on weekends.
I use to practice every day and then play 3 to 4 rounds a week. As of late I haven't played in about 2 or three months (life happens or death for that matter). However this will all change come next week.....Oh yaaaaaah! Time for a little Oregon and Washington road trip!!! By far some of the best course out there! Well, minus the stinging nettels lol!
I putt in my back yard and I am lucky to have a 9 hole course 2 houses down which I include in my daily walk weather allowing. So everyday if possible =D. The practice putting at home really helps your game. I have a pro course less than 5 miles away and I try to make it there when time allows.
I play usually twice a week, sometimes three times a week if my schedule permits.
2-3 times per week, practice at home every day.
drive there
Ive been out there the last 5 days. I usually play 4 full rounds a week. Weather's been in the 80s so Im feeling fresh still. Play at home too, just a 3 holer though
© 2015 Created by Terry "the Pirate" Calhoun.


text:
About Bintulu Airport
Opened in 2002, Bintulu Airport now serves the town of Bintulu as well as the state of Sarawak. Located 5.5km from Bintulu town, the airport has a single runway (2,745km) and is able to handle planes as large as the Boeing 747. It serves Malaysia Airlines, MASwings and Air Asia.
Latest News
klia2 Scheduled Maintenance Programe
10 January 2015
Malaysia Airports had undertaken to
perform maintenance and resurfacing works to address undulation on its Runway 3
in accordance to its airport operations Standards Operating Procedures. This is
in line with our safety priorities for flight operations at klia2. As such, Runway 3 is currently closed for
Read more
Everything you need to know about Bintulu Airport
Download the factsheet
Passenger Service Charges
See the Passenger Service Charges ↗
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text:
Hang tight!
Recipe by Dayna Dumas
"All your favorite pizza ingredients in a hot dip made in the microwave. Serve with sliced French baguette bread."
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1 (8 ounce) package
cream cheese, softened
1/2 teaspoon
dried oregano
1/2 teaspoon
dried parsley
1/4 teaspoon
dried basil
1 cup
shredded mozzarella cheese
1 cup
grated Parmesan cheese
1 cup
pizza sauce
2 tablespoons
chopped green bell pepper
2 ounces
pepperoni sausage, chopped
2 tablespoons
sliced black olives
Only one problem with this recipe! When guests begin a civilized cocktail hour, and discover this dip----they don't stop eating it! Appetizers are supposed to whet the desire of things to come, but this particular one, makes people want to forget the dinner, and just keep devouring this DELICIOUS warm dip. Thank you Dayna for sharing. After the first time I made this dip, I did add one extra step, that I think makes a noticeable difference. Before placing the Pepperoni on top of the mixture, I render out a lot of the orange (not too pretty) colored fat, by microwaving the Pepperoni, separately, for a bit on a paper towel, and then I place it onto the casserole. If I can't keep the "vultures" at bay, I may end up serving this as an entree!
The two stars are for flavor and appearance only. This really isn't a dip at all, more like a spread. It was difficult to serve, it was too thick, the cream cheese layer very heavy and the cheese on the top kept hardening and made it impossible to dip french bread slices and even broke the bagel chips. I put out a small knife to spread with but even then, you would get just big blobs of rubbery cheese. I did not use low fat cheese, I know that sometimes causes problems like this, but I went for the full fat varieties. Maybe if I kept this on a hot plate it might have worked better....
703 Ratings
Don't give up on this dip! When I was putting up the leftovers from the Super Bowl, I was surprised that no one ate much of this dip. It didn't taste much like pizza. I even added the spices to the cream cheese the day before. Well, I hated to waste the appetizer so I gave it another chance the next day and it was FABULOUS. Perhaps it needed 48 hours rest time or perhaps it needed to be baked first and then refrigerated for a day. All I can say is that after being heated the next day for the second time, it was a totally different dip. I served it with baguette slices but that wasn't the way to go. The saltiness of tortilla chips made a big difference. I think if you toasted the baguettes with olive oil and garlic salt as mentioned by a previous poster, that would work as well. The cooling of the dip was a bit of a problem. I think next time I'll add a bit of milk to the cream cheese to soften it. Bon appetit.
Don't ya just love watching peoples faces when they see something a pretty and interesting looking on the table? I must mention two of our best friends, Tony and RoseAnne and their kids, Gina and Andrea. They're obviously Italian and I just knew they'd love this dish. Ro, being very dramatic, looked at the plate and wanted to take a pic of it! She's a pip! Needless to say, this dip FLEW off the dish within no time! I took "Laura from Al's" advice and made this two days before. At times flavors really do need to get acquainted. I also added not only pepperoni to the topping, but regular Italian sausage and some onion too. I used my jar of Italian seasonings in addition to my regular garlic and onion powders. A thin chip won't work very well with this. Use something thicker like those mini seasoned bagel chips. Excellent Dayna!
Hot Pizza Dip
I love this dip,the only thing I did different was to bake it in the oven for 10 to 15 minutes at 350*Will make this often,because my grandaughters loved it.
My guests devoured this dip in less than five minutes. Next time I'll make two. I mixed the cream cheese and herbs the night before and baked at 350 for 30 mintues. This recipes is fabulous and so easy.
If you're a pizza person this is the dip for you. I omitted the olives since I dont care for them and pretty much used all the pepperonis that came in the standard sized package. I sprayed some PAM on vienna loaves and toasted them. I recommmend having this ready about 20 min before serving since the dish is really really hot and not manageable to spoon onto the bread. I've already made it twice! Also make a day ahead of time so the cream cheese sets with the spices and then bake on day two!
I made this for Superbowl and this was a hit! My changes: I added 1 tsp dry italian dressing seasoning in addition to the seasonings called for, I left out the peppers and olives, and I used 6 oz of pepperoni instead of 2. I baked it for 25 min at 350. This is one that will stay in my recipe box as a favorite. Thanks!!!
* Percent Daily Values are based on a 2,000 calorie diet.
Hot Pizza Dip
Serving Size: 1/16 of a recipe
Servings Per Recipe: 16
Amount Per Serving
Calories: 115
Calories from Fat: 86
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All your favorite pizza ingredients in an easy, cheesy microwaved dip.
This hot dip is loaded with spinach, artichokes, and plenty of gooey cheese!
Cheesy, creamy spinach and artichoke baked appetizer dip.


text: Shane Raynor is an editor at Ministry Matters and the series editor for Converge Bible Studies from Abingdon Press. He has also contributed to Circuit Rider, Good News, Outreach, The Daily Caller and ChurchLeaders.com. He lives in Nashville, TN. You can sign up here to receive Shane's Ministry Matters posts free via email. Show More… Social Media Facebook Twitter Google+ LinkedIn Blog http://www.shaneraynor.com On Twitter More Tweets Resources More Resources Converge Bible Studies: Being Holy Converge Bible Studies: Who You Are in Christ Converge Bible Studies: Who You Are in Christ - eBook


text:
Religious (Silver Bars & Rounds)
Religious Silver - APMEX carries a wide selection of religious silver bars and silver rounds. These silver bars and rounds are a perfect way to honor and proclaim your faith. The items in this category feature stunning designs and are .999 fine silver.
These silver bars and rounds make great silver collectibles or silver gifts for the special people in your life. APMEX makes it easy to buy silver by offering competitive silver prices on all silver products.
To view available products, click on the image representing the item of your interest:
Any Qty: $55.41


text:
Deutschland: +49 89 143 01280
USA Subscription Renewals: +1-866-830-4410
Uppsala, Sweden -- 20 February 2008 -- Fronter, a leading provider of online e-learning solutions, has chosen to base its new open platform on MySQL and other open source software products -- making it possible to satisfy customer demands for scalability and easy integration with other systems. This investment means a complete transition to platforms with open source code.
Fronter, headquartered in Norway, has enjoyed tremendous success with its learning platform for the education sector. Today, more than 3.8 million users in over 3,000 learning institutions in the UK, Europe and Nordic countries utilise the system to streamline both teaching and collaboration.
"We see several advantages with MySQL's software, which is easily scalable and offers reliable and stable functionality," says Roger Larsen, CEO of Fronter. "On a daily basis, our system's MySQL database handles up to 400,000 logins and an average of 20 million page views. We currently also support a proprietary database, but plan to phase it out and replace it with open source code. Evidence indicates that an open source codebase is easier and more affordable to set in operation and administer."
Fronter's new platform is entirely based on open standards and open source software products – the platform itself is also open to customers. This open strategy is an important part of the company's business goals."It means that we can always offer competitive prices and satisfy our customers' requirements, that we can support new technology and integration with other systems. This is crucial for our customers," Roger Larsen explains.
The Swedish Chalmers School of Continuing and Professional Studies, in charge of the university's commissioned courses and programmes, has been using Fronter's platform for several years.
"Fronter's open philosophy and foundation in open source code was a primary factor when we selected the system since we required the option of integrating the platform with our own systems," says Hugo Landgren, Programme Designer, Chalmers School of Continuing and Professional Studies.
Magnus Stenberg, head of sales for MySQL AB in Scandinavia, comments:
"We are proud that Fronter has decided to expand with our database. Just a few years ago, it was relatively uncommon for companies to build solutions around open source, but the trend has shifted and is now driven by both the technical and business advantages of open solutions."
MySQL AB develops and supports a family of high-performance, affordable database products. The company's flagship offering is 'MySQL Enterprise', a comprehensive set of production-tested software, proactive monitoring tools, and premium support services.
MySQL is the world's most popular open source database software. Many of the world's largest and fastest-growing organizations use MySQL to save time and money powering their high-volume Web sites, business-critical systems and packaged software -- including industry leaders such as Yahoo!, Alcatel-Lucent, Google, Nokia, YouTube and Booking.com.
With headquarters in the United States and Sweden -- and operations around the world -- MySQL AB supports both open source values and corporate customers' needs. For more information about MySQL, please visit www.mysql.com.
"MySQL" and "MySQL Enterprise" are registered trademarks of MySQL AB in the European Union, USA and other countries. Other product or company names mentioned may be trademarks or tradenames of their respective companies.


text:
I'm currently in the US at the moment and I honestly cannot believe Bush is going to war without UN backing.
Surely this makes Bush a War Criminal ?
He has now paved the way for any nutter in future to declare war on anyone.
He has split Europe,paved the way for more terrorist attacks and has led this world into a dangerous frightening era which we only escaped from in the 1940s.
Yep we have gone back 60 years!
He will cost Blair his job ruin the British parliament and has made the French a hated race in America.
Most Americans seem to rally to their country's cause too at moments like this too.
War is so much part of their culture almost as if they need it.
Married to an American I now realise that being even half American means-on purely a selfish level that we cannot travel now to 70% of the world for fear of being kidnapped or killed.All those experiences of travelling to different countries,enjoying different cultures and music will be gone.
Even travelling now as a Westerner is dangerous.
Working is wonderful cities like NY,SanFran and Washington will be dangerous too. America will become the most hated country in the 21 century.
Why can we not just celebrate different cultures and different music and love our neighbours.
Here's to the forever hope of World Peace.


text:
Nb: infants must be under the age of 2 and
children must be under the age of 12 at the time of
Chalets Amethyste 1 & 2 contained within one larger chalet, Amethyste 1 and 2 share the same entrance and ski deposit but are otherwise quite separate chalets. However there is the flexibility to use both chalets to accommodate a larger ski group of up to 20 guests wanting a catered ski chalet holiday in La Tania. The two separate lounges allow for differing requirements within the group: some may wish to have a quieter time or to watch a DVD whilst others chat over their day around the fire.
It has a spacious lounge with a classic wood finish and seating for everybody around a centrally positioned fireplace, creating a warm and welcoming place to relax and unwind. The open plan dining area with French windows leads onto the large South-West facing terrace; a great outdoor space for guests to enjoy. The chalet is equipped with electric boot warmers for your comfort, a DVD player and free Wi-Fi for your convenience and enjoyment.Chalet Amethyste is situated in an excellent position for piste and village access. It is located away from the road up two flights of steps from the lane that winds around the La Tania chalets. The pedestrianised village and its amenities are just over 5 minutes away by foot and you can ski from just 150m away from the chalet.
Upon arrival, you will find a luxury gift pack in every bedroom. Bring your iPod and enjoy the exceptional quality of our hand-crafted Audio systems. Each chalet also features a selection of games.
Chalet Amethyste 1 is a comfortable pinewood chalet on the ground and first floor of the building. The traditional pine-finished bedrooms all have full en-suite facilities with bright, fully tiled bathrooms and heated towel rails.Chalet Amethyste hosts live out. All rooms can take a cot except room 5 (some rooms may be a tight fit).Room 1: Double room ES bath & wcRoom 2: Twin room ES shower & wcRoom 3: Twin room ES shower & wcRoom 4: Twin room ES bath & wcRoom 5: Twin room ES shower & wc
Appetising Canapés & Apéritifs. On arrival in your chalet, handmade pre-dinner canapés and apéritifs will be served to you in the lounge while your experienced chalet host welcomes you to your chalet introduces you to the resort.
Delicious Cooked Breakfasts.Start your day with a delicious cooked breakfast that includes bacon, eggs, Heinz beans or hash browns and mushrooms or tomatoes plus a selection of cereals, porridge, yogurts and fresh bread.
Homemade Cakes & Afternoon Tea.Scrumptious homemade cakes and a choice of teas are provided every day, best enjoyed while you relax in the lounge area in front of the log fire.
Hearty Three Course Dinner.Home cooked evening meal served at 8pm with unlimited carefully selected red or white wine (6 days), with an additional 4th course of local cheese board with port on your final evening.
Iglu acts as a travel agent for disclosed principals/tour operators, further details
of which will be made available at the time of booking. Your holiday contract will
be bound by the tour operators terms and conditions.
Prices are shown for a basic room or unit, can be subject to change and are indicative
until time of booking. Please call on 020 8544 7114 for prices for other travel
and room options for this property.
Prices shown are per person per week based on maximum occupancy. Descriptions and
quality ratings are provided by the Tour Operator (or one of the Tour Operators
where similar holidays are offered by more than one supplier). We reserve the right
to make minor adjustments to the description or rating based on staff and customer
feedback. For payments by credit card, a 2.5% credit card charge (4% for AMEX) will
be added to your invoice. If you pay by a UK issued debit card, there is no charge.
All bookings are subject to a £5 per person Passenger Admin Fee charged by Iglu.com.