text:
- Freddie Hayward
- Manchester
- United Kingdom
This conversation is closed.
Debate: Does antibiotic-resistant bacteria prove Darwin's theory of evolution?
MRSA is a bacterium which has EVOLVED to become resistent to antibiotics. Therefore, if someone gets infected then its extremely difficult for antibiotics to kill the Pathogens.
Many scientists think that we are using to many antibiotics and bacteria is becoming immune. This is a huge problem as how will we protect ourselves against these infectious diseases?
However, i am asking whether this evolution, that has taken place in our lifespan, proves, or helps prove, Charles Darwin's theory of Evolution?
Nov 5 2012: If man evolved from apes then why are there still apes.
Nov 5 2012: this is a serious question, or you try to provoke something?
Nov 5 2012: If you seek a fight then there will always be opportunity in all you see. If you seek knowledge then there will always be a opportunity to learn. Those are your decisions ... not mine.
Nov 5 2012: your intentions are clearly not my decision, but yours. and the question is still open.Nov 5 2012: because we were a branch that evolved from teh ape. it doesnt mean all future apes are like us.
like we have different types of monkeys today.Nov 5 2012: The most accurate answer would be to point out that Human beings are Apes and more specifically Great Apes. I'm guessing however that, what you REALLY meant to ask is:
"If man evolved from chimpanzees then why are there still chimpanzees."
This at least is a species to species comparison. Ape is two levels higher. Humans are Great Apes which are Apes. Chimpanzees are Great Apes which are Apes.
So for the answer to your question to be of any relevance, your starting assumption must be correct. So first let's ask:
"Did man evolve from chimpanzees?". The answer is no. Chimpanzees and man evolved from a common ancestor. That common ancestor is not a chimpanzee (although arguably it is an Ape) or a man.
Your question is akin to asking "If I was born from my cousin X why is there still my cousin X?". In fact, you and cousin x are descended from grandpa Y who is neither you nor your cousin.
Done. Now you have two choices: either add what I just said to your knowledge of the subject and update your views (even if just that specific bit) or continue to repeat that false question to the exasperation of your peers. If you chose the latter, the only real victim of this choice is yourself, you would be willfully keeping yourself ignorant. Surely you have your best interest at heart?Nov 6 2012: http://www.youtube.com/watch?v=wh0F4FBLJRE
edward long
Nov 4 2012: Let's see: Certain strains of a bacteria are killed by a drug while other strains are unaffected by it. Does that prove that all life spontaneously came into existence and from that one common ancestor began to evolve by random selection of beneficial mutations over eons of time into the myriad life forms existing today? If that's proof I'm a monkey's uncle!
- +1
Nov 4 2012: Evolution does not explain the origin of life, only the diversity of life. Why can't creationists grasp this simple clarification?
Bacterial antibiotic resistance shows how natural selection works. It started with Bacteria where few survived. Since the survivors resists the antibiotics, they reproduce and their offspring inherit this characteristic. Thus, this characteristic is now prevalent. It proves this principle. It's evolution. From that to the whole of life having common ancestors there's a very long way to go. Bacterial antibiotic resistance is still evidence of evolution, but it is not the ultimate evidence. But if we put all the evidence together, evolution is just undeniable.
edward long
Nov 5 2012: If evolution is undeniable why are there so many learned scientists who deny it?You must admit, Mr. Driven, that everything in Biology appears to be designed, yet evolutionists claim nothing was designed but came about by natural selection of random mutations over eons of time. One vocal Atheist evolutionist scientist (R. Dawkins) wrote, "Biology is the study of complicated things that have the appearance of having been designed with a purpose." One of the discoverers of the double helix DNA structure (F. Crick) said, "Biologists must constantly keep in mind that what they see is not designed." When a piece of ancient pottery is discovered it is accepted as a designed thing. But, when a new biological truth is discovered it is accepted as not being designed. Evolution promotes naturalistic thinking while rejecting logical thinking. Also, Entropy, if I may call you that, why does evolution offer no explanation for the appearance of such things as consciousness; intelligence; meaning; altruism; or morality. Did unintelligent, blind chemistry create these?Nov 5 2012: Hello Edward,
- +1
Those are interesting questions and it's worth answering most of them. But would take several comments. We might veer too much out of topic. I could try a new idea/question/debate? "Answering questions about evolution." At some point. Anyway, question 1 would be worth answering if I knew of any learned scientist who denied evolution. But I know of none. But I will try the other questions if you are interested. If not interested (and nobody else seems interested) then I will not bother opening that other idea/question/debate. Let me know.
Nov 5 2012: I think a rational, logical debate about the strengths and weaknesses of both Darwinian Evolution and Neo-Evolution compared to what is commonly called Creationism would be profitable providing the participants on both sides can be civil. I'll be watching for your post! Bravo!Nov 5 2012: Hello again Edward,
Don't "bravo" me yet. I was talking about answering questions about evolution, such as yours. Not about opening a false debate between creationism and forms of evolutionary theory (creationism is not science). I would rather answer questions and clarify misconceptions about evolution. Still for it? Anyone else interested?
(I will check in a couple of days to see if people are interested. If so, then I'll go for it.)
Nov 6 2012: Sorry for the premature support. I have no idea what you are proposing. Please clarify.Nov 7 2012: I am proposing that first I answer the questions you asked above (and/or clarify the misconceptions that could be behind them), after that if somebody else had some more questions/misconceptions, then answer those too.
I thought it could be fun. But apparently nobody but you and I might care.
So maybe much later.Nov 5 2012: The most interesting facet of antibiotic-resistance is horizontal gene transfer. As for the question, I consider that was answered many many decades ago.Nov 4 2012: Darwin did not even use the term evolution until the 6th edition of his book. His book was entitled "The Origin of Species through Natural Selection".
Evolution was an existing theory when Darwin was alive; his contribution to it was the concept of naturally occurring circumstances that favour an aspect of a species will allow that aspect to become dominant. Variability in the species was considered to be there already, circumstances selected one characteristic over another.
Clearly then, antibiotics can be considered a occurrence of something in the bacteria's environment that will select more resistant bacteria and kill off the less resistant bacteria. Those bacteria that remain are less likely to be killed by antibacterial agents until stronger agents are found. This occurs in our life time because we are very long lived in comparison to bacteria which reproduce and therefore evolve at lightning speed by comparison.Nov 4 2012: This is agency, which means we instigated it, did it evolve? or did the resistant type survive to flourish but it wasn't because of natural causes, as far as i can remember of my experience with MRSA is that we all have it on our bodies since 2 hours after we are born. Infected people are quarantined immediately and everyone that interacts with the person pending on their health are to wear full hazard gear. This was 20 years ago so it wasn't recent and i don't have a clue how the procedures for MRSA is handled these days.
Nov 4 2012: How do you think that evolution works Ken if not by differential survival from variety? After that ask yourself where does this variety come from. If you get to understand that, then you get to understand evolution a bit better.
That we introduced the selection agent does not mean that it is not evolution. No, most of us did not carry any MRSA bacteria with us 20 years ago.
Nov 5 2012: Then Show me in nature where an antibiotic agent naturally occurring has spurned a bacterial change? 22 years ago i had to gear up, wash down before i was allowed passed the prep bubble just to help the patient toilet, i was just an orderly and when we were called in for our groups turn in procedure run down, which meant the nursing staff as well as us to the cleaners and food prep staff for each shift, Our infection Co-ordinators all said the same thing, it's a bacteria we all have that has changed and during my time there, there were four outbreaks in a 5 year period, 22 years ago to be exact. I'm glad i can finally talk about it as i had signed a silence form when i first started there, which only lasts ten years.
EDIT Also from what i can remember is that it has to do with the condition of your skin, i'm not going to look it up as this was the prevalent information available to us at that time, you got a problem with it then be my guest and do the hard work for us and up date my actually crappy memory, i just remember how it took longer to gear up and strip out than it did to actually care for the patient.Nov 5 2012: Evolving resistance to antibiotics in nature? I don't think that you understood what I said.
People working in hospitals are more prone to carry such things as MRSA. I would not be surprised about that policy if there was suspicion that an MRSA outbreak could happen/was around. That does not mean we all were carrying such things 20 years ago. Today the probability is higher (because of the overuse of antibiotics), but still not all of us have it.Nov 4 2012: The best proof is yet the fact that (neo) darwinism explains life and its origins, and better than any other hypothesis.Nov 3 2012: You may have heard the expression 'lies, damned lies and statistics'. Mathematics is an incredibly precise language with no room for ambiguity. Scientific modelling also tends to be very regimented. The idea is that someone has an idea and devises a way of possibly proving their idea (hypothesis). If it seems 'ground-breaking' then a paper is publised in a peer-reviewed journal. The idea is that anyone who is interested can then go away and repeat the experiment themselves. Darwin is remembered because his hypothesis was incredibly outrageous given the scientic environment of the time, which was arguing humans were at the top of the evolutionary tree. This human centred approach came from the time of the Enlightenment, the 'divine'being invested in one rather than in one's environment. Sorry really complex idea not suited to limited text space. You might have noted in the media during the last few weeks a big debate in the UK about ash trees and the effects of fungal pathogens. Trees live longer than humans, they are alive however they are disregarded as they appear to have no self-awareness. Media saying many questions already answered by other creatures in the natural sphere. Suggesting an organism that can reproduce itself very quickly will be able to adapt to a particular toxin much faster. A more complex multi cell organism may survive an onslaught but genetic mutations may occur. Human genome now decoded but scientists still working on what switches a gene on and off in successive offspring I understand. Hours of fun. C=Ettr2=C. Physics Chemistry Biology History and curious minds. Lovely.Nov 3 2012: "However, i am asking whether this evolution, that has taken place in our lifespan, proves, or helps prove, Charles Darwin's theory of Evolution?"
It is certainly evidence in favor of the theory of evolution, but Krisztian Pinter is technically correct in pointing out that a scientific theory cannot be proven.
BTW, scientists are actually creating "designer" bacteria through evolution: they throw a batch of bacteria in a petri dish with some material they want the bacteria to eat and after a while the bacteria evolve until they can digest the material.
Lejan .
Nov 3 2012: The term 'theory' of evolution is a bit missleading, as it is already a well proven and accepted fact in science.
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Bacteria resistence against antibiotics is based on mutation and selection according to Darwin, and due to the speed of reproduction rates, the misuse of antibiotics (quantity and false application) endanger its very effectiveness.Nov 3 2012: I don't think so. These "superbugs" such as MRSA, VRE, and the like came about for one reason because doctors were prescribing antibiotics too freely. As a result, the bacteria were mutating and becoming resistant to conventional treatment for infection.
Now, doctors know better. Unfortunately, some patients are still wanting antibiotics for the sniffles. As a nurse, II and the doctors educated patients on why this is no longer done. They still want them anyway.Nov 3 2012: no it is not, and the reason is that in science, no single thing proves anything. if you have a single observation, it can be explained in infinite number of ways. in science we are interested in models. can you come up with a system that can explain how the world works, and thus it is capable of making predictions? then we are happy.
all we can say in science is:
1. if an observation matches the model, we are happy
2. if the observation does not match the model, we need to either tweak the model, or abandon it
you can never ever prove theory.
Nov 3 2012: i agree, however i asked if it would help prove? a strong indicator towards the conclusion?
Nov 3 2012: if you mean strong as "we only need a hundred of these as opposed to a million to be confident" then yes. it is one important example of how selection works. with some care, it can be a good example for all mechanisms of evolution.Nov 3 2012: Nah ! Natural selection is just favouring already-resistant bacteria.
Nov 3 2012: but it wasnt bacteria resistent it change/evoled ? that link is to a biblical site do you not think that it would be biased then/
Peter Law
Nov 3 2012: Hi Freddie.
- +2
I don't thing anyone doubts that the resistant bacteria are already present in the population & are selected by natural selection. Call it evolution if you like, but it doesn't increase complexity.
""Genes for resistance to antibiotics, like the antibiotics themselves, are ancient.[1] However, the increasing prevalence of antibiotic-resistant bacterial infections seen in clinical practice stems from antibiotic use both within human medicine and veterinary medicine. Any use of antibiotics can increase selective pressure in a population of bacteria to allow the resistant bacteria to thrive and the susceptible bacteria to die off. As resistance towards antibiotics becomes more common, a greater need for alternative treatments arises. However, despite a push for new antibiotic therapies there has been a continued decline in the number of newly approved drugs.[2] Antibiotic resistance therefore poses a significant problem.""
Nov 4 2012: Peter,
Are you saying that Bacteria carrying several genes that allow them to resist antibiotics are no more complex than bacteria that do not carry such genes? That would be quite a stretch even by creationist standards.Nov 6 2012: There is no relationship between evolution and an increase in complexity. The reverse s perfectly possible and there are many known instances.Nov 4 2012: "Favouring already existing bacteria..."
Well what do you think natural selection means???
Peter Law
Nov 4 2012: Exactly that. However nothing 'evolves' by natural selection; it just gets selected from a set of existing options. To assist in the vindication of Darwin's theory, we would need a new improved bacteria to appear. One that hasn't existed before.
- +1
Nov 4 2012: New bacteria do appear all the time, because of mutations.
But do you believe in mutation?Nov 6 2012: Natural selection does not describe evolution - it is a phenomenon associated with it. Natural selection is not the only force involved - genetic drift is also possible, for example.
Since only a tiny fraction of bacteria have been identified, and since they transfer genetic material between each other - there being little in the way of a bacterial species, as such - it is not surprising that a new specie of bacteria can be identified. To summarize - they don't really have species so the comment is meaningless.Nov 4 2012: Sure it damages the bacteria so that the antibiotic cannot lock on & destroy it. Damaging things is not normally advantageous, & in no way furthers the Darwinist cause.
Nov 4 2012: Well what if this damage causes damaged bacteria to supersede "normal" bacteria, for instance if antibiotics can no longer destroy them? Wouldn't you call this damage advantageous?
This does "further the Darwinist cause", because that is all there is to it.
Something else, since we're at it... I've always wondered. Do Creationists believe domestic cats were created by God?Nov 4 2012: So having a variant of a gene that resists antibiotics is damage? Wow.Nov 4 2012: It's a bit like the flightless flies that don't get blown out to sea on a windy beach. Or the folks with sickle cell anaemia who are immune to aids. The mutation is only advantageous under specific conditions, but the overall fitness is reduced. Four punctures may be handy for getting under a low bridge, but not on the motorway. If you mutate any well designed system it's bad news.
I doubt God created domestic cats; much more likely a big cat of some sort with enough variability to 'evolve'(if you like) into the many variations we see today.
Nov 5 2012: Overall fitness? Are you saying that fitness is objective and not relative to environment?
So you can admit that evolution works on big cats. Do you believe in evolution for any other animal?Nov 6 2012: What people with sickle cell anemia are immune to AIDS? There is no association between sickle cell anemia and AIDS immunity.Nov 5 2012: Hi Gerald.
Superbugs only exist in sterile environments. Put them outside with all the other bugs & they don't do so well. Their mutation is a disadvantage in any environment other than a sterile one; where their unmutated brothers & sisters are decimated by the antibiotics.
No one has ever argued with the fact that creatures adapt to their environment under the influence of natural selection. We see it every day & can test it in the lab; it's undeniable, every creature has this ability. What we cannot see or test is the theory that one type of creature can eventually morph into another type of creature . Darwinists call the change within a kind evolution, & show obvious examples; then talk as if the crossing into a new type is the same phenomenon. It's a play on words. There is no convincing evidence that such a thing ever happened.
Nov 5 2012: I see. You believe in natural selection as a means of small adaptation. This matches the idea that the world is a few millenia old, I guess.
What I don't understand is why God would work so hard at making it seem like an accident. Why did he arrange bones and genes in a way that really looks like we're all descendants of a common ancestor?
I mean, can you blame evolutionists?Nov 6 2012: You are mixing terms - you can't deny the existence of evolution because 'it's only natural selection' and use the word evolution in the same sentence. If the superbugs did develop as a result of mutation as you describe then evidently evolution did take place. If they then don;t survive well outside a hospital that's irrelevant. Evolution is evolution is evolution. Clearly there is nothing to stop some mutilations benefiting organisms outside a sterile environment.Nov 5 2012: All my life I have marvelled at the world, the universe, the whole thing. Naturally, evolution was my first port of call. I was disappointed that there was no way to be certain that this was the way it had happened. Church was a meeting place for hypocrites, totally irrelevant to my search.
When I was 35 I came across the creation guys. They put the science together with the biblical narrative. This made sense to me, & makes more sense as I study it.
How you see things is based on what you expect to see.
When I see similar body plans, I do not see evolution, but a variety of near perfect creatures built by one maker & designed to survive in the same environment
When I see millions of millions of fossils buried deeply, I know they had to be buried rapidly to be fossils at all; so a fairly rapid worldwide flood makes more sense than the piecemeal deposition over billions of years espoused by evolution.
So this ordered & complex universe does not look to me like an accident, quite the opposite.
It is not difficult to line up fossils & make up a story about evolution; much more difficult to produce empirical evidence. I could dig up the bodies in our local graveyard & 'prove' that people are getting bigger/smaller/fatter/thinner, & given a reputation, people would believe me.
Evolution must make sense to those who refuse to consider a non-material explanation, it's sadly all they have. If you want an alternative, then try looking at things from a different perspective.
Nov 5 2012: Hello Peter,
I have seen many creationists argue that natural selection and mutations cannot be real and after blindly rejecting these facts it is easy to see why they are against evolution. However you have accepted these facts but could not see that small changes that are made possible by mutations and natural selection, given large enough time, will eventually lead to a specie to morph into a new specie. We are talking about a time scale of billions of years which is more than enough for a specie to morph into another one. Small changes eventually lead to transformations.Nov 5 2012: I hear you, but suppose for a minute the world is billions of years old.
What do you think might happen to two animals of the same species if they end up in groups living completely isolated from one another for millions of years? You must certainly agree that they might adapt to different environments and, given enough time, might end up becoming two very distinctive animals.
Is time the only trouble about the theory of evolution?Nov 6 2012: It seems you like things because 'they made sense to me.' Fine - but it doesn't make sense to other people.Nov 5 2012: Hi Alp.
Never heard of anybody denying natural selection.
Natural selection selects from pre-existing code. This code is finite within any creature, so the amount of variation is limited. This is obvious from breeding dogs, cattle, & corn; we always end up with dogs, cattle, & corn. If you want to believe otherwise, that's ok. There is no real proof though.
As most mutations disrupt the code the chances of new useful code appearing spontaneously is extremely remote. All the more so as it would have to have happened millions of times to give the desired results. Just not logical. We also have the small problem of body plans, which apparently have nothing to do with DNA coding. So we can mutate 'til the cows come home, it will not produce a new biological structure.
Nov 5 2012: "This code is finite within any creature, so the amount of variation is limited."
This reasoning is wrong, Peter, because mutated organisms don't carry the initial code anymore. They carry a new one, which can be mutated into yet another one. This is limitless, wouldn't you agree?Nov 6 2012: Hi Gerald.
There are a couple of problems with your scenario. Bill Gates & others have likened the DNA code to our computer code, but immensely more complex. Imagine we started introducing random code into Microsoft Word. How long would it remain usable ? Mutations will wreck the code long before any imagined benefit could take hold. Time & further mutations will only make matters worse; it's not going to happen. There is no reason to think nature is any different.
According to Stephen Myres the DNA coding has nothing at all to do with body plans, & no amount of 'beneficial' mutations can possibly produce a new organ, or body plan.
I just can't find any reason to believe in this stuff.
Nov 6 2012: It's very easy to demonstrate the evolutionary history of numerous organs. The eyes, for example, have been closely studied, and there is no evolutionary mystery at all.Nov 6 2012: I can't explain evolution any further. I'd have to start at the begining. When you say "Time & further mutations will only make matters worse; it's not going to happen", you're leaving out the role played by natural selection, as if chance were the only drive of evolution.
Also, you believe everything is the way it's supposed to be, like Feynman's joke about licence plates "You'll never believe the licence plate I saw on a car today. NL-5589!!!! Of all possible combinations, NL-5589!!! The odds are 1 to billions!"
You come from faraway and I don't think you'll ever grasp any of this unless you read a book about evolution. A good one, such as On the Origin of Species, or The Extended Phenotype. And even still, you'd have to let go to a lot of preconceptions you have about what life is. So I don't know... You might be too old for all this counter-intuitiveness.Nov 7 2012: Alan
Sorry about the aids comment. I did of course mean malaria. Getting old.
Same point though, sometimes bad clouds have a silver lining.
I am familiar with the "eye evolution" arguments. Lots of different creatures have eyes of varying complexity, so we line them up in the correct sequence to infer evolution. I don't buy it, we always have to infer. There are 100million cable connections behind each eyeball. That is technology we can understand, but is light years ahead of our abilities, not time & natural selection.
I am getting old right enough. I've been studying this for 50 years. In that time I think I have heard most of the arguments, seen most of the proofs, & read a book or two. I have found that materialists generally have little understanding of the religious or Id points of view. May I suggest "Signature in the Cell" , "Evolution, a Theory in Crisis", or "Darwin's Black Box".
Nov 7 2012: Evolution, a theory in crisis. I've read it. It's very unscientific and again, its basic argument is what Dawkins calls the argument of personnal incredulity. Living organisms are very complex, hence they cannot be originated from randomness.
It doesn't try to explain life. It just makes the statement that, wow, life sure seems to be of supernatural origin.
I'd have a similarly hard time explaining how a laptop does NOT operate on magic, to people with no scientific knowledge.
So what books have you read about evolution ?Nov 7 2012: Hi Gerald.
That I think is the point. If life is scientifically & mathematically impossible by any natural force we know about, it must be caused by a force we don't know about. The more we learn, the bigger the deficit in our understanding. Putting a fancy tag (personal incredulity) on it doesn't really answer the question.
I'll pass on the Dick measuring contest re. Books.
Nov 7 2012: if they showed that evolution is mathematically impossible, i eat my shoes with a knife and fork in public.Nov 7 2012: By no means do I judge people on how many books they've read, Peter. I'm curious about what you read, because personnally I didn't find inconsistencies in the evolutionary litterature I've encountered. Things are very well explained in a way that does not require that you take a leap of faith, or take the author's word for it on the basis of his academic authority.
It's explanatory. It's science.
So for instance, I don't see how one can be a Creationist after reading Darwin. Hence my curiosity as to whether you'd read "On the Origin of Species". I'd love your personnal opinion on what you found made no sense.
The more we learn, the more we understand. I don't know how you can deny that modern biology is tremedously deeper than pre-scientific revolution "natural philosophy". That solving problems raises new ones is independant of the fact that we do make progress.
Even if you were right, and if life was mathematically impossible, and Krisztian Pinter had to publicly dine on both his shoes... how is that an argument for Intelligent Design? Are you saying God is explained mathematically?Nov 3 2012: The case in which bacteria evolve to be able to survive in an environment including antibiotics provides support for the theory that bacteria evolve in this way and is also consistent with the broader theory that life evolves in this way. Consistency provides a piece of supporting data, but no single case constitutes proof.
People who doubt evolution as a theory might question whether one can assume from the case of bacteria a broad theory extending to all living things.


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text:
|Numéro de publication
|Type de publication
|Numéro de demande
|Date de publication
|12 oct. 2006
|Date de dépôt
|29 mars 2005
|Date de priorité
|29 mars 2005
|Autre référence de publication
|Numéro de publication
|Kie Ahn, Leonard Forbes
|Cessionnaire d'origine
|Micron Technology, Inc.
|Exporter la citation
|BiBTeX, EndNote, RefMan
|Référencé par (29), Classifications (30), Événements juridiques (2)
|Liens externes: USPTO, Cession USPTO, Espacenet
This application relates generally to semiconductor devices and device fabrication and, more particularly, to dielectric layers and their method of fabrication.
The semiconductor device industry has a market driven need to reduce the size of devices such as transistors. Smaller transistors result in improved operational speed and clock rate, and reduced power requirements in both the standby and operational modes. To reduce transistor size, the thickness of the silicon dioxide (SiO2) gate dielectric is reduced in proportion to the shrinkage of the gate length. For example, a metal-oxide-semiconductor field effect transistor (MOSFET) might use a 1.5 nm thick SiO2 gate dielectric for a gate length of less than 100 nm. Such thin gate dielectrics are a potential reliability issue and may be the most difficult issue facing the production of the upcoming generations of MOSFETs. The increasingly small and reliable integrated circuits (ICs) will likely be used in products such as processor chips, mobile telephones, and memory devices such as dynamic random access memories (DRAMs).
The semiconductor industry relies on the ability to reduce (or scale) all of the dimensions of its basic devices, such as the silicon based MOSFET, to achieve improved operational speed and power consumption. Device scaling includes scaling the gate dielectric, which has primarily been formed of silicon dioxide (SiO2). A thermally grown amorphous SiO2 layer provides an electrically and thermodynamically stable material, where the interface of the SiO2 layer with underlying silicon provides a high quality interface as well as superior electrical isolation properties. However, increased scaling and other requirements in microelectronic devices have created reliability issues as the gate dielectric has become thinner. The reliability concerns suggest the use of other dielectric materials as gate dielectrics, particularly materials with higher dielectric constants.
The abovementioned problems are addressed by the present invention and will be understood by reading and studying the following specification.
An embodiment for a method for forming an electronic device includes forming a dielectric layer by using an atomic layer deposition (ALD) technique to form a dielectric having a lanthanide or lanthanide oxide (for example Sm2O3) doped titanium oxide (TiOx). Titanium is elemental metal number 22, and the lanthanide series includes element numbers 57 to element 71. Titanium oxide films, for example TiO2 titanium dioxide, can be atomic layer deposited using various precursors such as titanium tetrachloride TiCl4 and water vapor H2O at a temperature of between 100 to 250° C. Lanthanide or lanthanide oxide films can be atomic layer deposited using various precursors such as volatile diketonate chelates (for example 2,2,6,6-tetramethyl-3,5-heptanedione) and ozone at less than 250° C. Each of these films may have a very tightly controlled thickness for each deposition cycle that depends on the saturation of the substrate surface. The surface of the ALD formed is also very smooth and continuous, even over sharp underlying topography. The deposition cycles may also be alternated between the two different materials, and the resulting film may either be a nanolaminate of the two or more different oxides, or the oxides may form an alloy with each other if the similarity between the two metals results in miscible materials. In either case the film properties may vary depending upon the ratio of the two or more different materials, and thus materials may be formed that have engineered properties.
The low temperature deposition results in films that are amorphous even after subsequent heat cycles such as densification and mild oxidative repair cycles. Silicon dioxide layers grown by oxidation of silicon substrates are amorphous, and the subsequent heat cycles typically used in semiconductor fabrication do not substantially change the amorphous nature of the silicon dioxide. This may be important since crystallization of a dielectric may cause the surface to become rough, which may cause greatly increased leakage across the dielectric. The crystallization of a dielectric may also cause the covering conductive layer to form sharp spikes, which may increase the local electric field to a level that may cause dielectric breakdown and result in a short circuit.
The dielectric structure is formed by depositing titanium by atomic layer deposition onto a substrate surface using precursor chemicals to form a film of TiO2 or some other titanium oxide, followed by ALD depositing of one or more lanthanide or lanthanide oxide materials selected from samarium, europium, gadolinium, holmium, erbium and thulium, onto the substrate using precursor chemicals and repeating as often as necessary to form a dielectric structure of the required thickness and atomic percentage of lanthanide doping. An embodiment has the lanthanide percent from 10 to 30%. An alloyed amorphous dielectric layer of lanthanide doped titanium oxide may be beneficially used because the high dielectric constant (high-k) of from about 50-110 of the film, as compared to 3.9 for silicon dioxide, and the excellent current leakage value, provides the functionality of a much thinner silicon dioxide film without the reliability loss consequent to using such physically thin films.
An embodiment includes a method of forming an amorphous dielectric layer on a substrate by atomic layer deposition at a predetermined temperature, the dielectric layer containing at least one titanium oxide layer doped by at least one layer of a lanthanide selected from the list including samarium, europium, gadolinium, holmium, erbium and thulium. The dielectric layer is then annealed at least once in either a non oxidizing ambient to make the layer more dense, or in a mildly oxidizing ambient to repair defects in the dielectric layer, or both. An electrically conductive layer is then formed on the dielectric layer. The predetermined temperature is in a range of approximately 100° C. to 250° C. The method may be used to form transistors, capacitors, and non volatile memory devices. The amorphous dielectric layer may be a number of individual titanium oxide layers, with at least one lanthanide layer interleaved between each one of the titanium oxide layers. The titanium oxide layers may be a group of continuous mono-layers of titanium oxide, each approximately 0.12 nm in thickness. The atomic ratio of the lanthanide to the titanium is from 10 to 30%, and may be a single lanthanide or a mixture of two or more lanthanides to obtain a dielectric constant value in the range from 50 to 100. The proper choice of titanium to lanthanide ratio is selected to obtain a leakage current of less than 10−8 A/cm2 and a breakdown voltage of greater than 2.0 MV/cm, and the dielectric layer will be very smooth, having a root mean square surface roughness that is less than one tenth of the layer thickness, which improves breakdown voltage and leakage current, and is a feature of amorphous dielectric layers. The lanthanide layer may be formed of two different lanthanides sequentially deposited between the titanium oxide layers, or the two lanthanides may be deposited simultaneously. The dielectric film may be annealed in an inert ambient at a temperature less than 1000° C. for about one minute, and then annealed in a mildly oxidizing ambient at a temperature of less than 700° C. for about one minute, and the oxidizing ambient may be at a reduced pressure of about 1 Torr of either oxygen, ozone, nitrous oxide, hydrogen peroxide and water vapor, or combinations thereof.
The atomic layer deposition may have an activated substrate surface at a preselected temperature exposed to a titanium-containing first precursor material for a first time period and flow volume, which saturates the substrate surface. Then a first purge for a second time period removes substantially all of the non-adsorbed portion of the first precursor material from the substrate surface. Then the substrate surface is exposed to a first oxidizing reactant material which reacts with the adsorbed first precursor material on the substrate surface to form a first titanium oxide material to complete a first deposition cycle. The deposition cycle is repeated until a desired first dielectric material thickness is obtained. Then the substrate surface is exposed to a lanthanide-containing second precursor material to saturate the substrate surface with the second precursor material, which is repeated to obtain the second material thickness. Alternatively, the lanthanide dopant may be in the form of a lanthanide oxide layer formed in the second deposition cycle by adding a second oxidizing reactant material.
In one embodiment, the first precursor is TiCl4 and the reactant is water vapor (H2O), and the deposition temperature is less than 250° C. The second precursor material may have a formula L(thd)3, where L is one of the lanthanide materials, and thd is 2,2,6,6-tetramethy-3,5-heptanedione. The lanthanide doped titanium oxide film may be a continuous layer having a root mean square surface roughness of less than 10 angstroms and a current leakage rate of less than 2×10−7 amps per cm2 at an electric field strength of 1 megavolt per cm. The amorphous dielectric layer may have an equivalent oxide thickness of less than 10 Angstroms, or less than 7 Angstroms, or even less than 4 Angstroms, and a breakdown voltage of greater than 2.5 MV/cm due to the higher physical thickness, the smoothness of the amorphous dielectric, and the proper atomic percentage of lanthanide dopant in the titanium oxide film.
Embodiments, include structures for capacitors, transistors, memory devices, and electronic systems with dielectric layers containing an atomic layer deposited lanthanide doped titanium oxide dielectric, and methods for forming such structures. These and other aspects, embodiments, advantages, and features will become apparent from the following description and the referenced drawings.
The following detailed description refers to the accompanying drawings that show, by way of illustration, specific aspects and embodiments in which the present invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the present invention. Other embodiments may be utilized and structural, logical, and electrical changes may be made without departing from the scope of the present invention. The various embodiments are not necessarily mutually exclusive, as some embodiments can be combined with one or more other embodiments to form new embodiments.
The terms wafer and substrate used in the following description include any structure having an exposed surface with which to form an integrated circuit (IC) structure. The term substrate is understood to include semiconductor wafers. The term substrate is also used to refer to semiconductor structures during processing, and may include other layers that have been fabricated thereupon. Both wafer and substrate include doped and undoped semiconductors, epitaxial semiconductor layers supported by a base semiconductor or insulator, as well as other semiconductor structures well known to one skilled in the art. The term conductor is understood to generally include n-type and p-type semiconductors, and the term insulator or dielectric is defined to include any material that is less electrically conductive than the materials referred to as conductors or as semiconductors.
The term "horizontal" as used in this application is defined as a plane parallel to the conventional plane or surface of a wafer or substrate, regardless of the orientation of the wafer or substrate. The term "vertical" refers to a direction perpendicular to the horizontal as defined above. Prepositions, such as "on", "side" (as in "sidewall"), "higher", "lower", "over" and "under" are defined with respect to the conventional plane or surface being on the top surface of the wafer or substrate, regardless of the orientation of the wafer or substrate. The following detailed description is, therefore, not to be taken in a limiting sense, and the scope of the present invention is defined only by the appended claims, along with the full scope of equivalents to which such claims are entitled.
A gate dielectric in a transistor has both a physical gate dielectric thickness and an equivalent oxide thickness (teq). The equivalent oxide thickness quantifies the electrical properties, such as capacitance, of the gate dielectric in terms of a representative physical thickness. teq is defined as the thickness of a theoretical SiO2 layer that would be required to have the same capacitance density as a given dielectric, ignoring leakage current and reliability considerations.
A SiO2 layer of thickness, t, deposited on a Si surface as a gate dielectric will have a teq larger than its thickness, t. This teq results from the capacitance in the surface channel on which the SiO2 is deposited due to the formation of a depletion/inversion region. This depletion/inversion region can result in teq being from 3 to 6 Angstroms (Å) larger than the SiO2 thickness, t. Thus, with the semiconductor industry driving to scale the gate dielectric equivalent oxide thickness to under 10 Å, the physical thickness requirement for a SiO2 layer used for a gate dielectric would need to be approximately 4 to 7 Å.
Additional requirements for a SiO2 layer would depend on the gate electrode used in conjunction with the SiO2 gate dielectric. Using a conventional polysilicon gate would result in an additional undesirable increase in teq for the SiO2 layer. This additional thickness could be eliminated by using a metal gate electrode, though metal gates are not currently used in typical complementary metal-oxide-semiconductor field effect transistor (CMOS) technology. Thus, future devices would be designed towards a physical SiO2 gate dielectric layer of about 4 Å or less.
Silicon dioxide is used as a gate dielectric, in part, due to its electrical isolation properties in a SiO2—Si based structure. This electrical isolation is due to the relatively large band gap of SiO2 (8.9 eV), which makes it a good insulator. Significant reductions in its band gap would eliminate it as a material for use as a gate dielectric. However, as the thickness of a SiO2 layer decreases, the number of atomic layers, or monolayers of the material in the thickness decreases. At a certain thickness, the number of monolayers will be sufficiently small that the SiO2 layer will not have a complete arrangement of atoms as found in a thicker, or bulk layer. As a result of incomplete formation relative to a bulk structure, a thin SiO2 layer of only one or two monolayers will not form a full band gap. The lack of a full band gap in a SiO2 gate dielectric may cause an effective short between an underlying conductive silicon channel and an overlying polysilicon gate. This undesirable property sets a limit on the physical thickness to which a SiO2 layer can be scaled. The minimum thickness due to this monolayer effect is thought to be about 7-8 Å. Therefore, for future devices to have a teq less than about 10 Å, other dielectrics than SiO2 need to be considered for use as a gate dielectric.
For a typical dielectric layer used as a gate dielectric, the capacitance is determined as one for a parallel plate capacitance: C=kε0A/t, where k is the dielectric constant, ε0 is the permittivity of free space, A is the area of the capacitor, and t is the thickness of the dielectric. The thickness, t, of a material is related to its teq for a given capacitance, with SiO2 having a dielectric constant kox=3.9, as
t=(k/k ox)t eq=(k/3.9)t eq.
Thus, materials with a dielectric constant greater than that of SiO2 will have a physical thickness that can be considerably larger than a desired teq, while providing the desired equivalent oxide thickness. For example, an alternate dielectric material with a dielectric constant of 10 could have a thickness of about 25.6 Å to provide a teq of 10 Å, not including any depletion/inversion layer effects. Thus, a reduced equivalent oxide thickness for transistors can be realized by using dielectric materials with higher dielectric constants than SiO2.
The thinner equivalent oxide thickness required for lower transistor operating voltages and smaller transistor dimensions may be realized by a significant number of materials, but additional fabricating requirements makes determining a suitable replacement for SiO2 difficult. The current view for the future of the microelectronics industry still predicts silicon-based devices. This requires that the gate dielectric employed be grown on a silicon substrate or silicon layer, which places significant constraints on the substitute dielectric material. During the formation of the dielectric on the silicon layer, there exists the possibility that a small layer of SiO2 could be formed in addition to the desired dielectric. The result would effectively be a dielectric layer consisting of two sub-layers in parallel with each other and the silicon layer on which the dielectric is formed. The resulting capacitance would be that of two dielectrics in series, and the teq of the dielectric layer would be the sum of the SiO2 thickness and a multiplicative factor of the thickness, t, of the dielectric being formed, written as
t eq =t SiO
Thus, if a SiO2 layer is formed in the process, the teq is again limited by a SiO2 layer. In the event that a barrier layer is formed between the silicon layer and the desired dielectric in which the barrier layer prevents the formation of a SiO2 layer, the teq would be limited by the layer with the lowest dielectric constant. However, whether a single dielectric layer with a high dielectric constant or a barrier layer with a higher dielectric constant than SiO2 is employed, the layer directly in contact, or interfacing with the silicon layer must provide a high quality interface to maintain high channel carrier mobility. Preventing formation of an undesired SiO2 layer is one advantage of using lower temperatures in atomic layer deposition (ALD).
One of the advantages of using SiO2 as a gate dielectric has been that the formation of the SiO2 layer results in an amorphous gate dielectric. Having an amorphous structure for a gate dielectric provides reduced leakage current problems associated with grain boundaries in polycrystalline gate dielectrics, which may cause high leakage paths. Additionally, grain size and orientation changes throughout a polycrystalline gate dielectric can cause variations in the film's dielectric constant, along with uniformity and surface topography problems. Typically, materials having the advantage of a high dielectric constant relative to SiO2 also have the disadvantage of a crystalline form, at least in a bulk configuration. The best candidates for replacing SiO2 as a gate dielectric are those with high dielectric constant, which can be fabricated as a thin layer with an amorphous form. The increased amorphous nature of the film is another advantage of using lower temperatures in the ALD deposition process.
Candidates to replace SiO2 include high-k dielectric materials. High-k materials include materials having a dielectric constant greater than silicon dioxide, for example, dielectric materials having a dielectric constant greater than about twice the dielectric constant of silicon dioxide. An appropriate high-k gate dielectric should have a large energy gap (Eg) and large energy barrier heights with the silicon substrate for both electrons and holes. Generally, the band gap is inversely related to the dielectric constant for a high-k material, which lessens some advantages of the high-k material. A set of high-k dielectric candidates for replacing silicon oxide as the dielectric material in electronic components in integrated circuits includes the lanthanide oxides such as Pr2O3, La2O3, Nd2O3, Sm2O3, Gd2O3, Dy2O3, Ce2O3, Tb2O3, Er2O3, Eu2O3, Lu2O3, Tm2O3, Ho2O3, Pm2O3, and Yb2O3. Other candidates include various lanthanide silicates, zirconium oxide ZrO2, titanium oxides such as TiO2, and combinations of these materials. Such high dielectric constant layers provide a significantly thinner equivalent oxide thickness compared with a silicon oxide layer having the same physical thickness. Alternately, such dielectric layers provide a significantly thicker physical thickness than a silicon oxide layer having the same equivalent oxide thickness. This increased physical thickness aids in reducing leakage current.
Another consideration for selecting the material and method for forming a dielectric film concerns the roughness of a dielectric film on a substrate. Surface roughness of the dielectric film has a significant effect on the electrical properties of the gate oxide, and the resulting operating characteristics of the transistor. The leakage current through a physical 1.0 nm gate dielectric may increase by a factor of 10 for every 0.1 increase in the root-mean-square (RMS) roughness of the dielectric layer. The crystallization of an amorphous dielectric may cause the surface to become rough, and is another advantage of using ALD precursors that allow a lower deposition temperature.
During a conventional sputtering deposition process, particles of the material to be deposited bombard the surface at a high energy. When a particle hits the surface, some particles adhere, and other particles cause damage. High energy impacts remove body region particles, creating pits. The surface of such a deposited layer may have a rough contour due to the rough interface at the body region.
In an embodiment, a dielectric film having a substantially smooth surface relative to other processing techniques is formed using atomic layer deposition (ALD). Further, forming such a dielectric film using atomic layer deposition can provide for controlling transitions between material layers. As a result of such control, atomic layer deposited dielectric film may have an engineered transition with a substrate surface, or may be formed with many thin layers of different dielectric materials to enable selection of the dielectric constant to a value between that available from pure dielectric compounds.
ALD, which may also be known as atomic layer epitaxy (ALE), is a modification of chemical vapor deposition (CVD) and may also be called "alternatively pulsed-CVD." In ALD, gaseous precursors are introduced one at a time to the substrate surface mounted within a reaction chamber (or reactor). This introduction of the gaseous precursors takes the form of sequential pulses of each gaseous precursor. In a pulse of a precursor gas, the precursor gas is made to flow into a specific area or region for a short period of time. Between the pulses, the reaction chamber is purged with a gas, which in many cases is an inert gas, and/or evacuated.
In the first reaction step of the ALD process the first precursor saturates and is chemisorbed at the substrate surface, during the first pulsing phase. Subsequent pulsing with a purging gas removes excess precursor from the reaction chamber, specifically the precursor that has not been chemisorbed.
The second pulsing phase introduces a second precursor to the substrate where the growth reaction of the desired film takes place, with a reaction thickness that depends upon the amount of the chemisorbed first precursor. Subsequent to the film growth reaction, reaction byproducts and precursor excess are purged from the reaction chamber. With a precursor chemistry where the precursors adsorb and aggressively react with each other on the substrate, one ALD cycle can be performed in less than one second in properly designed flow type reaction chambers. Typically, precursor pulse times range from about 0.5 sec to about 2 to 3 seconds.
In ALD processes, the saturation of all the reaction and purging phases makes the film growth self-limiting. This self-limiting growth results in large area uniformity and conformality, which has important applications for such cases as planar substrates, deep trenches, and in the processing of porous silicon and high surface area silica and alumina powders. Significantly, ALD provides for controlling film thickness in a straightforward manner by controlling the number of growth cycles.
ALD was originally developed to manufacture luminescent and dielectric films needed in electroluminescent displays. ALD has been studied for the growth of different epitaxial II-V and II-VI films, nonepitaxial crystalline or amorphous oxide and nitride films, and multilayer structures of these. There also has been considerable interest towards the ALD growth of silicon and germanium films, but due to the difficult precursor chemistry, this has not been very successful.
The precursors used in an ALD process may be gaseous, liquid or solid. However, liquid or solid precursors should be volatile with high vapor pressures or low sublimation temperatures. The vapor pressure should be high enough for effective mass transportation. In addition, solid and some liquid precursors may need to be heated inside the reaction chamber and introduced through heated tubes to the substrates. The necessary vapor pressure should be reached at a temperature below the substrate temperature to avoid the condensation of the precursors on the substrate. Due to the self-limiting growth mechanisms of ALD, relatively low vapor pressure solid precursors may be used, though evaporation rates may vary somewhat during the process because of changes in surface area.
Other desirable characteristics for ALD precursors include thermal stability at the substrate temperature, since decomposition may destroy surface control and accordingly the advantages of the ALD method, which relies on the reaction of the precursor at the substrate surface. A slight decomposition, if slow compared to the ALD growth, can be tolerated. The precursors should chemisorb on, or react with the surface, though the interaction between the precursor and the surface as well as the mechanism for the adsorption is different for different precursors. The molecules at the substrate surface should react aggressively with the second precursor, which may be called a reactant, to form the desired film. Additionally, precursors should not react with the film to cause etching, and precursors should not dissolve in the film. The use of highly reactive precursors in ALD may contrast with the precursors for conventional metallo-organic CVD (MOCVD) type reactions. Further, the by-products of the reaction should be gaseous in order to allow their easy removal from the reaction chamber during a purge stage. Finally, the by-products should not react or adsorb on the surface.
In a reaction sequence ALD (RS-ALD) process, the self-limiting process sequence involves sequential surface chemical reactions. RS-ALD relies on chemistry between a reactive surface and a reactive molecular precursor. In an RS-ALD process, molecular precursors are pulsed into the ALD reaction chamber separately. The metal precursor reaction at the substrate is typically followed by an inert gas pulse (or purge) to remove excess precursor and by-products from the reaction chamber prior to an input pulse of the next precursor of the fabrication sequence.
By the use of RS-ALD processes, films can be layered in equal metered sequences that are all identical in chemical kinetics, deposition per cycle, composition, and thickness. RS-ALD sequences generally deposit less than a full layer per cycle. Typically, a deposition or growth rate of about 0.25 to about 2.00 Å per RS-ALD cycle can be realized.
The advantages of ALD include continuity at an interface and avoiding poorly defined nucleating regions, which are typical for thin chemical vapor deposition (<20 Å) and physical vapor deposition (<50 Å), conformality over a variety of substrate topologies due to its layer-by-layer deposition technique, use of low temperature and mildly oxidizing processes, lack of dependence on the reaction chamber, growth thickness dependent solely on the number of cycles performed, and ability to engineer multilayer laminate films with resolution of one to two monolayers. ALD processes allow for deposition control on the order of single monolayers and the ability to deposit monolayers of amorphous films.
A cycle of an ALD deposition sequence includes pulsing a precursor material, pulsing a purging gas for the precursor, pulsing a reactant precursor, and pulsing the reactant's purging gas, resulting in a very consistent deposition thickness that depends upon the amount of the first precursor that adsorbs onto, and saturates, the surface. This cycle may be repeated until the desired thickness is achieved in a single material dielectric layer, or may be alternated with pulsing a third precursor material, pulsing a purging gas for the third precursor, pulsing a fourth reactant precursor, and pulsing the reactant's purging gas. There need not be a reactant gas if the precursor can interact with the substrate directly, as in the case of a dopant metal layer on a dielectric layer, as claimed in the present subject matter. In the case where the thickness of the first series of cycles results in a dielectric layer that is only a few molecular layers thick, and the second series of cycles also results in a different dielectric layer that is only a few molecular layers thick, this may be known as a nanolayer material or a nanolaminate. A nanolaminate means a composite film of ultra-thin layers of two or more different materials in a layered stack, where the layers are alternating layers of different materials having a thickness on the order of a nanometer, and may be a continuous film only a single monolayer thick of the material. The nanolayers are not limited to alternating single layers of each material, but may include having several layers of one material alternating with a single layer of the other material, to obtain a desired ratio of the two or more materials. Such an arrangement may obtain a dielectric constant that is between the values of the two or more materials singly. A nanolaminate may also include having several layers of one material formed by an ALD reaction either over or under a single layer of a different material formed by another type of reaction, such as a MOCVD reaction. The layers of different materials may remain separate after deposition, or they may react with each other to form an alloy layer. The alloy layer may be viewed as a doping layer, and the properties of the dielectric layer may be varied by such doping. The present subject matter uses the substitutional incorporation of cations of specific group IIA elements having certain sizes to reduce the leakage currents found in amorphous titanium oxide layers. The result are amorphous doped titanium oxide layers having a formula of a-Ti1-yLyOx, where y ranges from 0.1 to 0.3, and L represents one of the lanthanide materials including samarium, europium, gadolinium, holmium, erbium and thulium. Other lanthanide materials such as dysprosium and neodymium, and other early transition metals such as zirconium having higher valence levels may also be helpful, especially in combinations.
In an embodiment, a layer of titanium oxide is formed on a substrate mounted in a reaction chamber using sequential atomic layer deposition, which may also be known as RS-ALD. An embodiment includes forming the titanium oxide layers using a precursor gas such as titanium tetra-chloride, having a chemical formula of TiCl4, and water vapor. An embodiment includes forming the lanthanide or lanthanide oxide layer using a diketonate chelate precursor gas such as tetramethyl heptanedione or dipivaloylmethane, and ozone. Other solid or liquid precursors may be used in an appropriately designed reaction chamber. The use of such precursors in an ALD reaction chamber may result in lower deposition temperatures in the range of 100° C. to 250° C. Purge gases may include nitrogen, helium, argon or neon. The lanthanide doped titanium films formed may have good thermal and electrical properties, with a high dielectric constant k=50 to 100. Such films may survive high temperature anneals (sometimes used to reduce fixed surface state charges and improve metal to semiconductor resistance) of up to 1000° C., and have low leakage currents of less than 2×10−7 A/cm2 at electric field strengths of one MVolt/cm.
Also included in the system are purging gas sources 114 and 118, coupled to mass-flow controllers 116 and 120, respectively. The embodiment may use only one of the purge gases for all four disclosed illustrative purging steps, or both purge gases may be used simultaneously, or alternately as required for the particular desired result. Furthermore, additional purging gas sources can be constructed in ALD system 100, one purging gas source for each different precursor and reactant gas, for example. For a process that uses the same purging gas for multiple precursor gases, fewer purging gas sources may be required for ALD system 100. The precursor, reactant and purge gas sources are coupled by their associated mass-flow controllers to a common gas line or conduit 112, which is coupled to the gas-distribution fixture 110 inside the reaction chamber 102. Gas conduit 112 may also be coupled to another vacuum pump, or exhaust pump, not shown, to remove excess precursor gases, purging gases, and by-product gases at the end of a purging sequence from the gas conduit 112.
Vacuum pump, or exhaust pump, 104 is coupled to chamber 102 by control valve 105, which may be a mass-flow valve, to remove excess precursor gases, purging gases, and by-product gases from reaction chamber 102 at the end of a purging sequence. For convenience, control displays, mounting apparatus, temperature sensing devices, substrate maneuvering apparatus, and necessary electrical connections as are known to those skilled in the art are not shown in
The use, construction and operation of reaction chambers for deposition of films are understood by those of ordinary skill in the art of semiconductor fabrication. The present invention may be practiced on a variety of such reaction chambers without undue experimentation. Furthermore, one of ordinary skill in the art will comprehend the necessary detection, measurement, and control techniques in the art of semiconductor fabrication upon reading the disclosure.
The elements of ALD system 100 may be controlled by a computer using a computer readable medium having computer executable instructions to control the individual elements such as pressure, temperature, and gas flow within ALD system 100. To focus on the use of ALD system 100 in the various embodiments of the present invention, the computer is not shown.
At 208 a first purge gas enters the reaction chamber for a predetermined length of time sufficient to remove substantially all of the non-chemisorbed first precursor material. Typical times may be 1.0-2.0 seconds with a purge gas comprising nitrogen, argon, neon, combinations thereof, or other gases such as hydrogen. At 210 a first reactant gas enters the chamber for a predetermined length of time, sufficient to provide enough of the reactant to chemically combine with the amount of chemisorbed first precursor material on the surface of the substrate. Typical reactant materials include mildly oxidizing materials such as water vapor, but may in general also include hydrogen peroxide, nitrogen oxides, ozone and oxygen gas, and combinations thereof. At 212 a second purge gas, which may be the same or different from the first purge gas, enters the chamber for a predetermined length of time, sufficient to remove substantially all non-reacted materials and any reaction byproducts from the chamber.
At 214 a decision is made as to whether or not the thickness of the first dielectric material in the dielectric has reached the desired thickness, or whether another deposition cycle is required. If another deposition cycle is needed, then the operation returns to 206, until the desired first dielectric layer is completed, at which time the process moves on to the deposition of the second material at 215. At 215 a second precursor material enters the reaction chamber for a predetermined length of time, typically 0.5-2.0 seconds. The second precursor material is chemically adsorbed onto the surface of the substrate, in this case the top surface of the first dielectric material, the amount of absorption depending upon the temperature of the substrate, and the presence of sufficient flow of the precursor material. In addition, the pulsing of the precursor may use a pulsing period that provides uniform coverage of an adsorbed monolayer on the substrate surface, or may use a pulsing period that provides partial formation of a monolayer on the substrate surface.
At 216 the first purge gas is shown as entering the chamber, but the invention is not so limited. The purge gas used in the second dielectric material deposition may be the same or different from either of the two previously noted purge gases, and
At 218 an illustrative second reactant gas, which may be the same or different from the first reactant gas, enters the chamber for a predetermined length of time, sufficient to provide enough of the reactant to chemically combine with the amount of chemisorbed second precursor material on the surface of the substrate. In an embodiment, there is no second reactant gas, and the precursor chemically reacts with the first material to form an alloy or a doped layer of the first material. At 220 another purge gas enters the chamber, which may be the same or different from any of the three previously discussed purge gases, for a predetermined length of time, sufficient to remove substantially all non-reacted materials and any reaction byproducts from the chamber.
At 222 a decision is made as to whether or not the thickness of the second material in the nanolaminate dielectric has reached the desired thickness, or whether another deposition cycle is required. If another deposition cycle is needed, then the operation returns to 215, until the desired second layer is completed. The desired thicknesses of the first and second materials in the dielectric may not be the same thickness, and there may be more deposition cycles for one material as compared to the other. If the second layer has reached the desired thickness, the process moves on to a decision at 224 of whether the number of layers of the first and second materials has reached the desired number. In this illustrative embodiment a single layer of the first dielectric and a single layer of the second material have been completed at this point in the process. If more than a single layer of each material is desired, the process moves back to another deposition of the first dielectric material at 206. After the number of interleaved layers of dielectrics one and two has reached the desired value, the deposition ends at 226. Because the dielectric values of the ALD oxides in the described embodiment are high, for example lanthanide doped titanium oxide may have a dielectric constant of 50 to 100, and because the highly controlled layer thickness may be a single monolayer for each one of the interleaved dielectric layers, the physical thickness needed to obtain the equivalent dielectric properties of a very thin silicon dioxide layer may have from two to ten layers of the two dielectric materials described in the embodiments.
The embodiments described herein provide a process for growing a dielectric film having a wide range of useful equivalent oxide thickness, teq, associated with a dielectric constant in the range from about 50 to about 100. This range of dielectric constants provides for a teq ranging up to 4% relative to a given silicon dioxide thickness, that is, it appears to be equivalent to a silicon dioxide layer that is 25 times thinner, providing enhanced probability for reducing leakage current. Controlling the amount of lanthanide doping in the titanium film to 10 to 30% results in relatively low leakage current as compared to pure titanium oxides. Additionally, the novel process can be implemented to form transistors, capacitors, memory devices, and other electronic systems including information handling devices. The invention is not limited to two dielectric materials, and the equipment described in
The dielectric covering the area on the substrate 302 between the source and drain diffused regions 304 and 306 may be deposited by ALD in this illustrative embodiment, and may comprise one or more titanium oxide layers 310 and 314, each potentially formed of many individual layers. There is shown a sequentially interleaved lanthanide or lanthanide oxide layer 312. Alternatively, there may be other combinations of interleaved and non-interleaved layers of varying thickness and deposition method. This nanolaminate dielectric layer is referred to as the gate oxide, and while shown as distinct layers for clarity, is a single alloyed layer, or doped layer. There may be a diffusion barrier layer inserted between the first dielectric layer 310 and the substrate 302 to prevent metal contamination from affecting the electrical properties of the device. The illustrative embodiment shows the two titanium dielectric layers 310 and 314 having the same thickness, however the desired dielectric properties of the nanolaminate film may be best achieved by adjusting the ratio of the thickness of the two dielectric layers to different values. The transistor 300 has a conductive material forming a gate 318 in this illustrative embodiment, but the nanolaminate dielectric may also be used in a floating gate device such as an EEPROM transistor, as either one or both of the floating gate and the control gate oxide layers. The conductive material may be polysilicon or various metals.
In an illustrative embodiment, gate dielectric (layers 310-314) include a tunnel gate insulator and a floating gate dielectric in a flash memory device. Use of dielectric layers containing a nanolaminate atomic layer deposited dielectric layer for a gate dielectric and/or floating gate dielectric in which the dielectric layer contacts a conductive layer is not limited to silicon based substrates, but may be used with a variety of semiconductor substrates.
Embodiments of methods for forming dielectric layers containing an ALD deposited dielectric layer contacting a conductive layer may also be applied to forming capacitors in various integrated circuits, memory devices, and electronic systems. In an embodiment including a capacitor 400 illustrated in
System 600 may include, but is not limited to, information handling devices, telecommunication systems, and computers. Peripheral devices 610 may include displays, additional storage memory, or other control devices that may operate in conjunction with controller 602 and/or memory 606. It will be understood that embodiments are equally applicable to any size and type of memory circuit and are not intended to be limited to a particular type of memory device. Memory types include a DRAM, SRAM (Static Random Access Memory) or Flash memories. Additionally, the DRAM could be a synchronous DRAM commonly referred to as SGRAM (Synchronous Graphics Random Access Memory), SDRAM (Synchronous Dynamic Random Access Memory), SDRAM II, and DDR SDRAM (Double Data Rate SDRAM), as well as other emerging DRAM technologies.
Formation of nanolaminate lanthanide doped titanium oxide layers by an ALD deposition may be realized using a diketonate type chelate precursor chemical, such as L(thd)3, and an oxidizing precursor, such as ozone. Further, such doped dielectric films formed in relatively low temperatures, such as 250° C. or lower, may be amorphous and possess smooth surfaces. Such oxide films may provide enhanced electrical properties as compared to physical deposition methods, such as sputtering, or typical chemical layer depositions, due to their smoother surface, and reduced damage, resulting in reduced leakage current. Additionally, such dielectric layers provide a significantly thicker physical thickness than a silicon oxide layer having the same equivalent oxide thickness, where the increased thickness may also reduce leakage current issues. These properties of RS-ALD deposited dielectric layers allow for application as dielectric layers in electronic devices and systems.
Capacitors, transistors, higher level ICs or devices including memory devices, and electronic systems are constructed utilizing the novel process for forming a dielectric film having an ultra thin equivalent oxide thickness, teq. Gate dielectric layers or films containing atomic layer deposited lanthanide oxide are formed having a dielectric constant (k) substantially higher than that of silicon oxide, such that these dielectric films possess an equivalent thickness, teq, thinner than SiO2 gate dielectrics of the same physical thickness. Alternatively, the high dielectric constant relative to silicon dioxide allows the use of much larger physical thickness of these high-k dielectric materials for the same teq of SiO2. Film having the relatively larger physical thickness aids in processing gate dielectrics and other dielectric layers in electronic devices and systems, and improves the electrical properties of the dielectrics.
Although specific embodiments have been illustrated and described herein, it will be appreciated by those of ordinary skill in the art that any arrangement that is calculated to achieve the same purpose may be substituted for the specific embodiments shown. This application is intended to cover any adaptations or variations of embodiments of the present invention. It is to be understood that the above description is intended to be illustrative, and not restrictive, and that the phraseology or terminology employed herein is for the purpose of description and not of limitation. Combinations of the above embodiments and other embodiments will be apparent to those of skill in the art upon studying the above description. The scope of the present invention includes any other applications in which embodiments of the above structures and fabrication methods are used. The scope of the embodiments of the present invention should be determined with reference to the appended claims, along with the full scope of equivalents to which such claims are entitled.
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|Classification aux États-Unis
|Classification internationale
|Classification coopérative
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|29 mars 2005
Owner name: MICRON TECHNOLOGY, INC., IDAHO
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|14 sept. 2011
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text:
I had a +1 bonus to all my skills because I had a tier 2 destiny and a +2 bonus for a tier 3 destiny, now they are gone and have no clue why. I have tried levelling up, going to sleep and having a full fate/reckoning bar. Does anyone know what I've done wrong?
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You only get those bonuses when using the "Jack-of-all-trades" style destinies, the ones that require skill points in all three branches. It sounds like you switched to a specialized 1 or 2 branch destiny, so you don't get that perk any more.


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I totally agree with you that Reggie should be used more in space and in the passing game but by him saying this to the media accomplishes what exactly? If Sherman hasn't done it by now not sure he will. Really don't understand why he won't but just don't see how the players comments like his and Dansby's help the situation umelss you think it just puts more pressure on the coaches to re-think things for the future?
I love how everyone is talking like Bush is the second coming of Barry Sanders or something. Should the dolphins throw more balls to him....yes. Has Bush really played well enough to warrant all this support? HELL NO!!! The reason Thomas goes into the game is because he doesn't dance in the backfield. Way to often Bush is running east/west. Seriously, if you have watched games this year, Bush has not really separated himself as an elite back. He is a solid back plain and simple! Stop crying over Bush seriously!!
Yea we all want Reggie's punk ass shying away from taking a hit instead of going for a first down on every play. Don't get me wrong he has the ability to break a great play at any moment when he decides not to dance around like a twinkle-toes little f**k. But in all honesty he hasn't been used to his full potential. For the life of me I have no clue why we haven't been using Bush and Miller in open spaces. The mismatches would be ridiculous.
I like the mentality and culture change that Philbin has brought. The great organizations don't have bitches constantly having to have their feelings and sentiments heard. But alas, even with the change in mentality and culture we are still bound to be a sub-.500 team. He's a rookie coach so I can deal with the growing pains for this season, but I hope he looks at himself real hard in the mirror this offseason and sees where he has to take control and not delegate so much power to Sherman and Coyle. Personel decisions come from Sherman's decision to use specific packages that include Daniel Thomas in, Philbin should step in and say, no **** that **** it hasn't been working let's keep Bush in.
So why would it be that we all say this but the coaching staff apparently does not agree? Do they know something we don't? Well of course they know a lot of things that we don't, but I wonder what the thinking is on this.
I wonder about this because it seems like such a no brainer. I've seen Reggie drop some pretty easy passes maybe he's not that good in the passing game. Then again I don't think his stats from NO back that theory up. I really thought Philbin and Sherman would find creative ways to get bush, Thomas and clay matched up on NE's slow ass LB's but was very dissapointed they did not. I was thinking 3 WR, 2 RB's shotgun, send the WR'S deep and slide an RB into the middle late. Kind of like what Baltimore was doing to us with Ray Rice when we had Crowder in the middle. Never saw it once and it seemed like a pretty good plan to me but what do i know. I guess they thought running right at Vince Wilfork over and over again was our best chance to win.
A liar, cheater and murderer walk into a bar, the New England Patriots must be in town!
Probably trying to limit his touches? He is only getting 13 carries per game.
My irk with Reggie Bush is not the inside stutter. It's the frustrating inconsistency in the open field. Far too often this year he's had dangerous gaps and turned them into a head down ordinary collapse, smack into the nearby defender. That never used to happen at USC. There were games like Fresno State in 2005 when every opportunity was a highlight reel gem. He's had some of those this season, when everything clicks and one move tops the previous one on the same run, but not as many as his raw ability and elusiveness should warrant. I'll continue to believe it's lack of touches, and too much focus on the inside game. When nobody fretted about Reggie running inside at USC he didn't have the head down battering ram tendency on any run. It was free flowing masterpiece. I'm convinced he thinks too much these days. Not that you can blame him, given Philbin's erratic decision making, learning on the job and making sure there's plenty to self-correct.


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When I try to send a text message why does it go to drafts? And I still cant send the message even from drafts.
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Sounds like you actually did type up your message, but hit the back key by accident, or, did not supply the number for the intended person to receive your text, which gets saved in drafts.
When you go into Messaging, you should see "(Draft)" by the message, go into that message and there should be a 'Send' button beside the text entry box where you compose the message, tap that, it should go straight away.
Try it and let us know how that goes for you. :)