text:
Popular culture has painted an image of Las Vegas as an adult playground filled with booze, exotic dancers and mobsters. But in recent years, the people of "Sin City" have added fun, wholesome attractions in and out of the brightly lit casinos to change the town's image into a family-friendly one.
Most of the famous Las Vegas Strip centers on Las Vegas Boulevard, starting on one end with the Mandalay Bay Hotel and Casino, and ending with the recognizable Stratosphere tower, which includes a gaming floor, restaurants and buffet, shopping mall and hotel.
Before heading out on a Vegas vacation, visit www.nellisforcesupport.com and click on the ITT-tickets link to find a local show sheet. The show sheet contains information on local attractions, show times, and ticket prices, and helps you plan and stay on budget. When military members arrive in Vegas, visit Nellis Air Force Base ITT office to purchase discounted admission tickets to many of the attractions and thrill rides offered.
One casino on the strip offering thrill rides is the Stratosphere. The tower is the tallest freestanding observation tower in the U.S., topping off at 1,149 feet. Thrill seekers have four rides to conquer: SkyJump, where only the bravest free fall from the 108th floor; Insanity, a mechanical arm that spins riders over the edge of the tower at 909 feet; X-Scream, a giant teeter-totter that tilts riders headfirst over the edge; and the Big Shot, a ride that catapults riders from the 921-foot high platform straight to the top of the mast at 1,081 feet.
The Adventuredome theme park offers 25 rides and attractions including rock climbing, a roller coaster, a Ferris wheel and a 4-D theater. Visitors can call ahead to make birthday party arrangements at 702-794-3905. The Adventuredome is open daily except Thursday.
Circus Circus is also famous for its Midway arcade, located on the second floor. It offers a variety of challenging carnival games, face painting, video games and circus performances onstage.
New York New York is yet another casino offering a thrill ride. The roller coaster was previously known as the Manhattan Express and takes its theme from New York taxicabs.
Other casinos on the strip offer engaging interactive exhibits for the whole family. Walk into the black onyx-like pyramid known as the Luxor Casino and you will find two exhibits to stimulate the curious.
The Bodies exhibit shows visitors the elegance of the human body through actual dissected and preserved human specimens. The Titanic artifact exhibit transports visitors back in time to the ship's maiden voyage.
For visitors craving a more interactive exhibit, the MGM Grand challenges people to solve the CSI Experience. Choose from three crime scenes to investigate, work in one of 15 forensic crime labs and report findings to catch the killer.
Las Vegas has a variety of Halloween tours and attractions to frighten even the bravest souls. VegasToursUSA.com offers three different ghost tours showcasing the haunted stomping grounds of mobsters, miners, gamblers and Elvis Presley.
Goretorium, located at the intersection of Harmon Avenue and Las Vegas Boulevard is a year-round haunted house and features a multilevel maze inside a mythical casino called The Delmont. Visitors will encounter live actors and state-of-the-art animatronics and special effects.
There are many more attractions and a variety of shows and concerts featuring popular bands, comedians and entertainers. For more information on things to do and see in Las Vegas, visit the website or call 702-652-2193.


text:
Teddy Bear (10 timer til paradis)
The 38-year-old bodybuilder Dennis would really like to find true love. He has never had a girlfriend and lives alone with his mother in a suburb of Copenhagen. When his uncle marries a girl from Thailand, Dennis decides to try his own luck on a trip to Pattaya. He knows that his mother would never accept another woman in his life, so he lies and tells her that he is going to Germany. But it isn't long before Dennis' naive picture of what love should be like get some big bruises, and he is about to lose hope when he unexpectedly meets the Thai woman Toi, and they fall in love.
Cast: David Winters, Elsebeth Steentoft, Barbara Zatler, Kim Kold, Chanicha Shindejanichakul
Produced by:
Directed by: Mads Matthiesen
Written by: Mads Matthiesen, Martin Zandvliet
Running time: 1hr 32min
Opens: Aug 22, 2012 NY
|Theaters for Today
Pick a day
on this day.

subset: commoncrawl


text:
Motivate yourself to greatness with the legendary Wonder Bread racer himself, Ricky Bobby! For fans of one of the funniest sports movies ever made, this hilarious poster is for you. Featuring the movie's official logo, the face of Will Ferrell's deadpan character, two inspirational quotes, and a facsimilie autograph from the man himself right on the poster! Celebrate the greatness of this hysterical send-up of NASCAR nation for all-time with this sharp piece of wall art - also a great collector's item for years to come!
Product Specifications:


text:
Consequently, this screen is perfect for cinema and photography schools as well as any venue where guest speakers show up with either film or video presentations. Optional remote controls are available to make your setup even easier.
Ideal for home theaters or where a variety of image formats are projected Second motor lowers and raises black masks into position to convert screen to different format Patented in-the-roller motor mounting system for quiet operation Unique "step-back" masking design eliminates shadows UL listed
TypeStyle Dual Masking ElectrolFront/Rear Projection FrontMount WallFinish Pearlescent; flame retardant and mildew resistant fiberglassTension Control TensionedKeystone Control Not Applicable
DimensionsOverall Size Not Specified by ManufacturerAspect Ratio NTSC: 4:3 HDTV: 16:9 Letterbox: 1:1.85 Cinemascope: 1:2.35Masking Options Letterbox to NTSC Format Cinemascope to HDTV Format (black masking borders standard)ControlsVoltage 120V, 60HzIntegrated Control Three position control switch and a two position control switch in a two gang box with cover plateControl Options Dual Motor Low Voltage Control System (DMC) Wireless Remote Control for DMC Radio Frequency Remote Radio Frequency Range Extender available Infrared Remote 220 Volt, 50Hz Motor
CasingColor Black primer coat - ready to accept final finish by othersMaterial Wood


text:
If you have a data plan, cell phone manufacturers are happy to provide instructions to download their ringtones ($2.50 each), and they sell you the data plan ($15.00 per month). If you try to download a ringtone without a data plan they charge you a connection fee plus a transfer fee for each kb of data moved. What they don't tell you is that you can 1) make your own ringtones, 2) load them on the phone with a USB cable, miniSD flash drive, or Bluetooth, and 3) assign them to your contacts or general callers. Some phone manufacturers and providers make this a trivial exercise. For Sprint users with a Samsung phone, this Instructable can save you some money.
There are two ways I know of to do this: a really complicated way and a really easy way. The really complicated way uses software designed to reprogram the commands in your phone. A mistake could make your phone useless. It is just like editing the registry on your computer. I could explain the hard way but my eyeballs start shooting blood just reading it. This Instructable is the easy way, but there are some compromises you will have to live with.
I wrote an article about this several months ago, and have since moved it, along with a video showing this whole process, into my blog.


text:
Nb: infants must be under the age of 2 and
children must be under the age of 12 at the time of
Ideally located in the heart of Sölden, the Hotel Tyrol is a family-run hotel built in a traditional style, with modern features and offering excellent cuisine. Situated within walking distance of the numerous bars, restaurants and shops in Sölden's main street, and just 500m from the nearest ski lifts.
Klassik Rooms (2-3 people): Austrian twin with single sofa bed, cable TV, safe, hairdryer, bath or shower & wc.
Superior rooms (2-4 people): Spacious rooms with two possible extra beds, with bath, wc and balcony on request with supplement. Klassik Single rooms available at a supplement.
Iglu acts as a travel agent for disclosed principals/tour operators, further details
of which will be made available at the time of booking. Your holiday contract will
be bound by the tour operators terms and conditions.
Prices are shown for a basic room or unit, can be subject to change and are indicative
until time of booking. Please call on 020 8544 7114 for prices for other travel
and room options for this property.
Prices shown are per person per week based on maximum occupancy. Descriptions and
quality ratings are provided by the Tour Operator (or one of the Tour Operators
where similar holidays are offered by more than one supplier). We reserve the right
to make minor adjustments to the description or rating based on staff and customer
feedback. For payments by credit card, a 2.5% credit card charge (4% for AMEX) will
be added to your invoice. If you pay by a UK issued debit card, there is no charge.
All bookings are subject to a £5 per person Passenger Admin Fee charged by Iglu.com.


text:
Hi, new guy to welding here, just got started with gas welding (oxy/ace) and I'm discovering that i need to build a few tools in order to get started. One is a corner clamp/jig and the other is a welding table.
I've lurked around for a while and found out that its not good to weld the top of the welding table to the legs because it might cause heat distortion to the top. Of all the pictures of everyone's welding table i have seen on this forum, it seems that almost everyone just put a little tack every few inches apart, just enough to make the legs and top stick. Is this the standard procedure? or am I missing something? Am i correct to say that I want to minimize heating the top piece?
I'll make some corner jigs before i make the table. Just have to measure 20 times before i cut/weld.
Results 1 to 10 of 12
Thread: welding table... just tacking?
03-05-2009, 03:19 PM #1Junior Member
- Join Date
- Mar 2009
- Posts
- 25
welding table... just tacking?
all of them ive seen have been welded to the top. how thick are the parts (i.e. the top and the legs)?
Miller Trailblazer 302
Smith Torch Outfit
Lots of Grinders
Miller Elite Autodark Hood
O'l Trusty Jackson
I made my frame from 3x3 angle and just tacked the 3/8" top to it to keep it from warping...BobBob Wright, Grandson of Tee Nee Boat Trailer Founder
Metal Master Fab Salem, Oh 44460
Birthplace of the Silver & Deming Drill
1999 MM185 w/185 Spoolgun,1986 Thunderbolt AC/DC
Spool Gun conversion. How To Do It. Below.
Mine is tacked as well...which to me is just a few 1 inch welds at the corners.
3/8ths thick as well. When the weld cools it can draw the top out of shape.
Mine had a slight cup to it, so I flipped it and when I welded it, I did it where it brought it almost perfectly flat.
I need a flat surface more than indestuctable...YMMV
Miller Dynasty 700...OH YEA BABY!!
Miller Dynasty 280 with AC independent expansion card
Miller Dynasty 200 DX "Blue Lightning"
Miller Bobcat 225 NT (what I began my present Biz with!)
Miller 30-A Spoolgun
Miller WC-115-A
Miller Spectrum 300
Miller 225 Thunderbolt (my first machine bought new 1980)
Miller Digital Elite Titanium 9400
03-05-2009, 10:15 PM #5Junior Member
- Join Date
- Mar 2009
- Posts
- 3
i used 3x6 tube steel and basicly made a set of saw horses then took a peice of 1" plate 6' x 10' and welded it to the top of the horses of course i do alot of heavy fab and in order to use 3/8 plate id have to have supports every few inchs to keep it from warping
03-06-2009, 07:19 AM #6Junior Member
- Join Date
- Mar 2009
- Posts
- 25
I think i'll drill a few holes and bolt the top to the frame til i get half way decent at welding or taching. at the price these materials are going, i don't want to have to remake anything.
on a side note, can someone recommend where to buy metal (tubing, sheeting, slab, angle iron... etc) in the inland empire area? I live in Upland, so anything between 57 and 15 freeway is close to me. thanks in advance.
The first table I made had a table with a 1/4" top, that warped when we welded it. I figured if I made another one, I would bolt the top down, but all of the tables I've made since have not had solid tops.Miller Maxstar 200 DX
RMLS-14 Momentary Hand Control
Miller Syncrowave 180 SD
Porter Cable 14" dry metal saw
Hitachi 4.5" grinder
03-06-2009, 08:07 PM #8Senior Member
- Join Date
- Feb 2008
- Location
- North of Phila. PA
- Posts
- 404
If you are not comfortable with your welds by all means attach it some other way until you feel you can.
A few thoughts on bolting it down. I would use machine screws and counter sink the heads myself, or drill and tap the top and run the bolts up from the bottom and grind the excess flush to the surface. carriage bolts are another option, but I hate anything sticking up on mine. They always seem to be right where I need to hold something down flat, no matter where I would put them. That top is too thin to counter sink Allen heads or std bolts. You could weld studs to the bottom, but at that point I'd just flip the table and tack the top to the frame.
I have one small portable table that's just a chunk of scrap 1/4" plate on 2 metal work bench legs. I have a few counter sunk holes for 1/4" machine screws, but 90% of the time I just clamp the top down for the few things I need to do and then pack it back up, unless I need a clear top for something.
My current table is a 36 x 36 x 3/16 plate sitting on three pieces of 1x2 rect. tubing on top of my wooden work bench.Miller Maxstar 200 DX
RMLS-14 Momentary Hand Control
Miller Syncrowave 180 SD
Porter Cable 14" dry metal saw
Hitachi 4.5" grinder


text:
November 18, 2014
Proceeds from this event support the Monmouth University Scholarship Fund.
November 03, 2014
Monmouth University's Leon Hess Business School is one of the nation's best business schools, according to the education services company The Princeton Review.
October 29, 2014
In its 15th year, the student-organized community service initiative celebrated its largest turnout ever.
September 19, 2014
The award is given for articles of expository excellence published in Mathematics Magazine
August 18, 2014
The successful internship program is coordinated by the University's Career Services office.
August 11, 2014
Monmouth University's Summer Research Program Symposium Will Be Held on August 14.
July 02, 2014
American Scholastic Press Association Names The Outlook "Best University Newspaper" in its National Competition Two Years in a Row
Justin R. Schlemm and Taylor J. Klodowski earned second place at Marathon Data Systems' Second Annual "Marathon Hackathon"
June 27, 2014
Laura J. Moriarty Named Provost and Vice President of Academic Affairs
June 04, 2014
James P. Mack, EdD, Was Selected for His Passion and Dedication to Teaching.
May 29, 2014
May 2014 Commencement ceremony was featured in The Star-Ledger on May 22
The May 2014 Commencement ceremony was featured on Word on the Shore May 23
May 23, 2014
The award is given to the undergraduate student with highest GPA with all credits earned exclusively at Monmouth University.
May 16, 2014
A total of $1,000 was raised and will be donated through The Kortney Rose Foundation to the pediatric brain tumor research program at the Children's Hospital of Philadelphia.
May 08, 2014
Fasano was among 4,200 undergraduates from across the country to present research at the NCUR.


text:
President Vladimir Putin vowed Thursday to fix Russia's economic woes within two years by diversifying away from its heavy reliance on oil and gas and voiced confidence that the plummeting ruble will soon recover.
Stevie Wonder�and his girlfriend, Tomeeka Robyn Bracy, have welcomed a baby girl,�
By the Rev. Tim SchenckMore Content Now
Just days before he killed a 17-year-old German exchange student, Markus Kaarma told hairstylists he had been waiting up to shoot some kids who were burglarizing homes.
COLDWATER — The Coldwater Cardinal wrestling team welcomed the Marshall Redhawks in their first ever Interstate 8 matchup, downing the Redhawks 59-15 on the night.The first ever Interstate 8 duel meet for both squads started at the...
COLDWATER — What began in 2010 as a Legg Middle School program has spread throughout Coldwater Community Schools.Andrea Chamberlain and Janine Sharrard run the Backpack Buddies program on a voluntary basis. It is under...
COLDWATER — Terry Boguth, chief financial officer for Coldwater Community Schools, addressed the Board of Education Monday night to discuss the request for approving the Bond Preliminary Application.The board passed the application,...
- Events Calendar


text:
Who would have expected the "America: Love it or leave it" crowd to be leading the exodus?
But that's just what appears to be happening in the wake of President Obama's re-election, as more than 675,000 residents in all 50 states have now signed Internet petitions seeking secession from the United States. As of Wednesday, the Indiana version seeking a "peaceful" withdrawal from the union had received more than 17,600 signatures, closing in on the 25,000 needed to elicit a response from the White House under the "We, the people" program it launched last year. In Texas, which really used to be a republic, more than 94,700 people had signed.
As an expression of political frustration over America's refusal to tame a federal government run amok, it's understandable and perhaps even psychologically healthy.
As a meaningful solution to the country's all-too-real problems, however, one of the leaders of Fort Wayne's tea-party movement fears it could be worse than useless if it draws attention and effort from more fruitful pursuits.
That might not be the reaction you'd expect from Emery McClendon, the delivery service driver who organized Fort Wayne's first tea-party rally back in 2009. "If we don't change, our kids won't enjoy the same America, the same prosperity," he said at the time. "John Kennedy said, 'Ask what you can do for your country,' but America is changing. Today, people look at what government can do for them. We need to return to the founding principles that made America great."
McClendon still feels that way, even if the presidential election results argue that the majority of Americans don't. But that's no reasons for people of his political persuasion to talk about secession, he insists – and not just because it was tried 150 years ago and left hundreds of thousands of Americans dead and half the country in ruins.
"You can't 'peacefully' secede. This is a terrible time to split the country," he said, noting deep divisions create openings for terrorists and other potential enemies. "I still strongly believe in America. We need to be educating people about the Constitution."
Indiana's secession petition, however, invokes not the Constitution but the Declaration of Independence, which states that "Governments are instituted among men, deriving their just powers from the consent of the governed, that whenever any form of government becomes destructive of these ends, it is the right of the people to alter or abolish it, and institute new government."
But the problem with that argument should be obvious: Millions of American voters clearly don't like Obama's plans for the country, but a few million more do, which is why he won and Mitt Romney lost. He has been given the "consent of the governed" for four more years – a power the American colonialists could not peacefully exercise.
The secessionist petitions provided fodder for conservative talk radio Wednesday, and although the movement represents real displeasure by real people, it does not offer a real solution. That will come only when conservatives and traditionalists do precisely what McClendon suggests:
Winning elections through the power and persuasiveness of American ideals and principles that have stood the test of time.
Conservatives or members of any other group who insist on imposing a one-size-fits-all style of government on an obviously divided country will inevitably be disappointed. The genius of the Constitution was that it provided a federal framework within which each state could enjoy a certain amount of sovereignty.
"States' rights'' – like secession itself – became identified with the evils of slavery and racism, but the concept that individual states should be left whenever possible to make their own decisions is as old as the Constitution itself, which explicitly reserves powers not granted to federal government to the states and the people.
How much less anger and division might there be in the nation today if the 9th and 10th amendments were enforced instead of ignored? Instead of threatening to secede, you could live as you please simply by moving to a state in which "red" or "blue" are more than colors on a political map.
Until that happens, however – and don't hold your breath – go ahead and sign the petition. While you're on the website, you can also sign petitions to restore objectivity to the media, impeach the president and remove "In God we trust" from our currency.
You can also join the more than 12,000 people who support efforts to deport or deny citizenship to anyone who signs a secessionist petition. But don't worry:
Liberals have proved they don't believe in deportation any more than most conservatives really believe a new country would be better than the one we already have, and hope to improve.


text:
Another Viral Video! This Little 5 Year Old Is Already A Feminist [video]
I was watching The Talk today and they said this YouTube video has already gone viral with a million combined hits. I, however,thought the same thing that Sharon Osborne expressed. No five-year-old is going to have the neck snap going on and the attitude this little girl has. She i


text:
Endosulfan is a DDT-era insecticide that persists in the environment and in our bodies. EPA data show that all of us are routinely exposed to small amounts of endosulfan in the food we eat, with young children receiving the largest doses. Studies of popluations exposed to endosulfan have been published suggesting that endosulfan can increase the risk of autism, delay puberty in boys, and cause birth defects of the male reproductive system.
Endosulfan attacks the central nervous system, causing overstimulation and a range of health harms. Acute exposure to endosulfan causes headaches, nausea and vomiting, seizures, and in extreme cases, unconsciousness and death. The EPA classifies endosulfan in its most extreme toxicity category (highly acutely toxic) because relatively small doses prove lethal in labratory studies.
Endosulfan related deaths and debilitation are common is the developing world, where endosulfan is cheap but personal protective equipment is expensive or even impossible to obtain. Examples include thirty-seven farmers dying in Benin, two boys dead in South Africa, flower workers poisoned in Colombia, and villagers in Philippines and India poisoned by the toxic pesticide.
At lower doses, endosulfan impacts on human health are long-lasting:
Research shows that pre-natal exposure to endosulfan could elevate risk for autism in children. Children exposed in the womb during the first trimester of pregnancy were more likely to develop autism, a recent study showed. The study, which focused on several organochlorines pesticides including endosulfan, also revealed that autism incidence in children increased with poundage of pesticides and decreased with distance from application areas. This 2007 Los Angeles Times article explains some of the study's findings.
Like DDT, endosulfan is an organochlorine, an antiquated class of pesticides known for their persistence, toxicity, mobility, and ability to accumulate in organisms and concentrate in food chains. Endosulfan's chemical characteristics and behavior in the environment make it a "persistent organic pollutant," eligible for a global ban under the Stockholm Convention.
Endosulfan is pervasive in the global atmosphere and more abundant than other organochlorines. The Arctic Monitoring and Assessment Program's Arctic Pollution 2009 assessment reports that endosulfan is also present in remote regions, and unlike other legacy pesticides whose concentrations are declining, endosufan concentrations have remained stable.
Levels of endosulfan in the environment can be lethal to certain organisms, especially fish and amphibians. Waterways near application sites are particularly threatened—for example, the EPA has estimated that after a typical endosulfan application to tomatoes, concentrations of endosulfan downstream can be up to 28 times higher than the level that is fatal to the average freshwater fish. Once released into the environment these residues take years to degrade, traveling many miles in the meanwhile.
US EPA determined in 2010 that endosulfan could not be used safely, and announced that it was phasing out all uses of the chemical in the US by 2016. Brazil and several other countries followed suit, announcing phase out plans for the chemical.
On the international front, the Stockholm Convention on Persistent Organic Pollutants agreed in April 2011 that endosulfan should be added to the list of chemicals banned globally under the treaty.
In June of 2011, endosulfan was also added to another international treaty, the Rotterdam Convention, which requires government-to-government notification when dangerous pesticides and other chemicals cross international borders.
Research & Factsheets
News Archive
Additional Human Health Studies:
Additional Non-Human Health Studies: Reproductive & Developmental Toxicity
Additional Health Studies: Possible Carcinogenic Effects:


text:
HSF-1 induced GFP reporter and Doxycycline induced RFP reporter Measured in Cell-Based System Using Plate Reader - 2038-03_Inhibitor_DoseNoFile_CherryPick_Activity_Set3
Assay Overview: Modified NIH3T3, transformed to express GFP under the control of a HSF-1 response element, and RFP under the control of a Doxycycline inducible (Tet-On) promoter will be exposed to small molecules. Upon addition of small molecules, Doxycycline is added to wells to induce RFP expression, and cells are exposed to a 2hr thermal heat-shock at 42oC to elicit a stress response and resulting GFP expression. After 48hr incubation, the amount fluorescence of each of these markers is measured using an Envision plate reader. ..more
BioActive Compounds: 94
Related Experiments
Keywords: Heat Shock Factor-1 (HSF-1), Stress Response, NIH3T3, GFP, RFP
Assay Overview: Modified NIH3T3, transformed to express GFP under the control of a HSF-1 response element, and RFP under the control of a Doxycycline inducible (Tet-On) promoter will be exposed to small molecules. Upon addition of small molecules, Doxycycline is added to wells to induce RFP expression, and cells are exposed to a 2hr thermal heat-shock at 42oC to elicit a stress response and resulting GFP expression. After 48hr incubation, the amount fluorescence of each of these markers is measured using an Envision plate reader.
Expected Outcome:
This assay identifies inhibitors of HSF-1 in those instances where there is a selective loss of GFP signal due to the prevention of HSF-1 being able to drive the expression of the GFP reporter. These selective inhibitors of HSF-1 should not interfere with the Doxycycline induced RFP expression. Additionally, this assay also identifies those compounds which act as broad spectrum inhibitors of transcription/translation, which will cause a decrease in expression of both GFP and RFP reporters.
Protocol: R4-3T3 GFP/RFP Dual Reporter assay:
The R4-3T3 cell line is modified version of NIH3T3 fibroblasts with an integrated GFP construct under the control of a heat shock response element, and a RFP construct under the control of a doxycycline inducible promoter. The R4-3T3 cell line was generously provided for this study by Dr. Luke Whitesell.
The R4-3T3 cell line is propagated in Opti-MEM (Invitrogen, cat# 31985-088) supplemented with 2.5% heat inactivated fetal bovine serum (FBS) (Invitrogen, cat# 16140089), 1% penicillin/streptomycin/glutamine (Invitrogen, cat# 10378-016), and 200microg/mL G418 (Gibco, cat# 10131) at 37 degrees C in CO2 incubators (Thermo Scientific) with 5% CO2, 21% O2, and 95% humidity. For High-Throughput Screening (HTS) assays, cells are grown in T225 flask (BD Falcon, cat# 353138) or Hyperflasks (Corning, cat# 10010), harvested at more than 80% confluence using Accumax cell detachment solution (Innovative Cell Technologies, cat# AM105). Cell number is counted using a Cellometer Auto M10 cell counter (Nexelcom Bioscience) and viability is measured by mixing one volume of cells with one same volume of Trypan Blue solution (0.4%)(dilution 1/2). Only cultures of >94% viability are utilized for HTS.
Compound Screening is carried out on the Broad Institute/Chemical Biology Platform General system (GS) automation unit:
Day 1 (Cell plating):
1. R4-3T3 cells are harvested and re-suspended in Opti-MEM with 2.5% Heat inactivated FBS, 1% penicillin/streptomycin/glutamine. R4-3T3 cells (from an initial cell suspension of 1x106 cells/ml) are dispensed using a MultiDrop Combi/Standard tube dispensing cassette (Thermo Scientific) in Black clear-bottom 384 well assay plates (Corning, cat# 3985BC) at a final density of 15,000 cells per well in a volume of 30 iL. The cells are kept in suspension using a magnetic bar and a stirrer during the dispensing.
2. The assay plates (cell plates) are incubated for 24 hours at 37 degrees C in incubator calibrated to 5% CO2, 21% O2, and 95% humidity.
Day 2 (Compound pinning into assay plate):
3. Doxycycline is added to each assay plate at a concentration of 8microg/mL (4X) in 10microL of Opti-MEM with 2.5% Heat inactivated FBS, 1% penicillin/streptomycin/glutamine using a MultiDrop Combi/Standard tube dispensing cassette. After this addition, each assay plate has a final volume of 40microL Opti-MEM with 2microg/mL Doxycycline.
4. MLPCN test compounds as well as the in-plate positive control (160iM Didemnin B (DdB), BRD-K58977490-001-01-0, 32 wells, 400nM final conc.) plates are pinned consecutively one after the other and transferred into one assay plate. Each compound plate is pinned into duplicate assay plates.
5. After addition of compounds, the assay plates are incubated for a 2hr at 42 degrees C to induce HSF-1. After this incubation at elevated temperature, the plates are returned to 37 degrees C to incubate for a further 48hrs.
(Reading fluorescence from assay plates with Envision):
6. After 48 hr incubation, fluorescence is measured in each assay plate using Envision plate reader (Perkin Elmer). GFP is measured by bottom-read with a 485nm excitation filter, 505nm dichroic mirror, and 535nm emission filter. RFP measured by bottom-read with 550nm excitation filter, 555nm dichroic mirror, and 595nm emission filter.
PRESENCE OF CONTROLS: Neutral control wells (NC; n=32) and positive control wells (PC; n=32) were included on every plate.
EXPECTED OUTCOME: Active compounds result in decreasing readout signal.
For each sample, the highest valid tested concentration (Max_Concentration) was determined and the active concentration limit (AC_limit) was set to equal (10)(Max_Concentration).
The raw signals of the plate wells were normalized using the 'Neutral Controls Minus Inhibitors' method in Genedata Assay Analyzer (v7.0.3):
The median raw signal of the intraplate neutral control wells was set to a normalized activity value of 0.
The median raw signal of the intraplate positive control wells was set to a normalized activity value of -100.
Experimental wells values were scaled to this range.
PATTERN CORRECTION: The plate pattern correction algorithm 'Runwise Pattern (Additive)' in Genedata (v7.0.3) was applied to the normalized plate data.
AC values were calculated using the curve fitting strategies in Genedata Screener Condoseo (7.0.3).
AC values were calculated up to the active concentration limit described for each sample.
pAC was set to equal -1*log10(AC)
Activity_Outcome = 1 (inactive) when:
a) compound shows activity but in a direction opposite to the expected outcome
in these cases, values describing curve fitting parameters (Sinf, S0, Hill Slope, log_AC50, log_AC50_SE) are set to null
b) curve fit is constant where activity is > -30% and < 30% at all tested concentrations, or
c) AC > AC_limit
Activity_Outcome = 2 (active) when:
AC <= AC_limit
Activity_Outcome = 3 (inconclusive) when:
a) Curve fitting strategy resulted in a constant fit with activity >= -70% but <= -30%, or
b) The fit was deemed not valid due to poor fit quality.
If PUBCHEM_ACTIVITY_OUTCOME = 1 (inactive) or 3 (inconclusive),
then PUBCHEM_ACTIVITY_SCORE = 0
If PUBCHEM_ACTIVITY_OUTCOME = 2 (active)
then PUBCHEM_ACTIVITY_SCORE = (10)(pAC)
Scores relate to AC in this manner:
120 = 1 pM
90 = 1 nM
60 = 1 uM
30 = 1 mM
When the active concentration (AC) is calculated to be greater than the highest valid tested concentration (Max_Concentration), the PUBCHEM_ACTIVITY_SCORE is calculated using Max_Concentration as the basis.
When the active concentration (AC) is calculated to be less than the lowest tested concentration, the PUBCHEM_ACTIVITY_SCORE is calculated using the lowest tested concentration as the basis.
The individual dose data point columns ('Activity_at_xxuM') reported here represent the median of valid (unmasked) replicate observations at each concentration. These values are the inputs to a curve fitting algorithm.
All other data columns represent values which are derived during the curve fitting algorithm; this may sometimes include automatic further masking of some replicate data points.
Occasionally this results in perceived inconsistencies: for example, between the derived 'Maximal_Activity' and the apparent most active data point.
Categorized Comment - additional comments and annotations
From PubChem:
Assay Format: Cell-based
Assay Cell Type: NIH 3T3
From ChEMBL:
Assay Format: Cell-based
Assay Type: Functional
Result Definitions
* Activity Concentration. ** Test Concentration.
Additional Information
Grant Number: 1 R03 MH086465-01
Data Table (Concise)


text:
Something May have Changed at All American Ford
Not to Worry…We're Here to Help
It seems like the page you are looking for is no longer available. Here are some popular pages on our site that should help you find what you need. And if not, then you can always contact us.
- Browse New Vehicles: View our extensive selection of every new model available from Ford.
- Browse Pre-Owned Vehicles: Take a look at our selection of used cars, and pre-owned Ford vehicles.
- Special Offers: See special offers on Ford vehicles, plus lease specials, service specials and more!
- Financing & Leasing: We make it easy for you to drive away in the Ford vehicle of your dreams at an affordable monthly rate.
- Service & Maintenance: Get the service you and your vehicle deserve at All American Ford Old Bridge. Find out more and schedule your appointment today.
- Parts & Accessories: Select from a wide variety of genuine OEM parts and accessories for your Ford vehicle.
Still can't find what you need? Click here to contact us or call 732-253-4175. Our friendly staff is ready to answer your questions.


text:
15 Nov 2010
|Printable version | Email to a friend
|New Dog Mountain Video and Burlington Exhibit
There is a fun, new YouTube video about Dog Mountain's 2010 fall festival in Saint Johnsbury VT. Stephan Huneck, artist and founder of Dog Mountain and its famous Dog chapel, passed away earlier this year so all the events from now on are in part memorials to his life and work.
Coincidentally, Frog Hollow gallery in Burlington is currently staging a Stephan Huneck exhibit through the end of this month. It features Huneck's prints, sculptures and books including a posthumously printed book entitles "Even Bad Dogs Go To Heaven" and even a replica of Dog Chapel.
Frog Hollow is the Vermont State Craft Center and features works from 250 Vermont artisans. It's located at 85 Church Street in Burlington. Their summer hours are still listed on the website but it should be open most days during winter. You can call (802) 863-6458 for details.
Both Dog Mountain and Frog Hollow also have Facebook pages.
All dog lovers should plan a visit to Dog Mountain located just outside Saint Johnsbury Vermont. It's open seven days a week year around and has festivals each year. For your GPS, plug in the address: 143 Parks Road, Saint Johnsbury, VT, 05819
Jeff Connor Grunberg Haus
|Advice , Attractions , Events , Shopping , Unusual , VT Books , VT Products
|posted by grunhaus at 23:37


text:
|Publication number
|Publication type
|Application number
|Publication date
|Apr 19, 2007
|Filing date
|Dec 8, 2006
|Priority date
|Aug 2, 2004
|Also published as
|Publication number
|Kie Ahn, Leonard Forbes
|Original Assignee
|Micron Technology, Inc.
|Export Citation
|BiBTeX, EndNote, RefMan
|Referenced by (22), Classifications (14), Legal Events (1)
|External Links: USPTO, USPTO Assignment, Espacenet
This application is a divisional of U.S. application Ser. No. 10/909,959 filed Aug. 2, 2004, which is incorporated herein by reference in its entirety.
This application relates generally to semiconductor devices and device fabrication and, more particularly, to dielectric layers and their method of fabrication.
The semiconductor device industry has a market driven need to improve speed performance, improve its low static (off-state) power requirements, and lower production costs for its silicon based microelectronic products. In particular, there is continuous pressure to reduce the size of devices such as transistors. To reduce transistor size, the thickness of the silicon dioxide, SiO2, gate dielectric is reduced in proportion to the shrinkage of the gate length. For example, a metal-oxide-semiconductor field effect transistor (MOSFET) would use a 1.5 nm thick SiO2 gate dielectric for a gate length of 70 nm. The ultimate goal is to fabricate increasingly smaller and more reliable integrated circuits (ICs) for use in products such as processor chips, mobile telephones, and memory devices such as dynamic random access memories (DRAMs).
Currently, the semiconductor industry relies on the ability to reduce or scale the dimensions of its basic devices, primarily, the silicon based MOSFET. This device scaling includes scaling the gate dielectric, which has primarily been fabricated using silicon dioxide. A thermally grown amorphous SiO2 layer provides an electrically and thermodynamically stable material, where the interface of the SiO2 layer with underlying silicon provides a high quality interface as well as superior electrical isolation properties. However, increased scaling and other requirements in microelectronic devices have created the need to use other dielectric materials as gate dielectrics.
The following detailed description refers to the accompanying drawings that show, by way of illustration, specific aspects and embodiments in which the present invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the present invention. Other embodiments may be utilized and structural, logical, and electrical changes may be made without departing from the scope of the present invention. The various embodiments disclosed herein are not necessarily mutually exclusive, as some disclosed embodiments can be combined with one or more other disclosed embodiments to form new embodiments.
The terms wafer and substrate used in the following description include any structure having an exposed surface with which to form an integrated circuit (IC) structure. The term substrate is understood to include semiconductor wafers. The term substrate is also used to refer to semiconductor structures during processing, and may include other layers that have been fabricated thereupon. Both wafer and substrate include doped and undoped semiconductors, epitaxial semiconductor layers supported by a base semiconductor or insulator, as well as other semiconductor structures well known to one skilled in the art. The term conductor is understood to generally include n-type and p-type semiconductors and the term insulator or dielectric is defined to include any material that is less electrically conductive than the materials referred to as conductors or as semiconductors.
The term "horizontal" as used in this application is defined as a plane parallel to the conventional plane or surface of a wafer or substrate, regardless of the orientation of the wafer or substrate. The term "vertical" refers to a direction perpendicular to the horizontal as defined above. Prepositions, such as "on", "side" (as in "sidewall"), "higher", "lower", "over" and "under" are defined with respect to the conventional plane or surface being on the top surface of the wafer or substrate, regardless of the orientation of the wafer or substrate. The following detailed description is, therefore, not to be taken in a limiting sense, and the scope of the present invention is defined only by the appended claims, along with the full scope of equivalents to which such claims are entitled.
A gate dielectric in a transistor has both a physical gate dielectric thickness and an equivalent oxide thickness (teq). The equivalent oxide thickness quantifies the electrical properties, such as capacitance, of the gate dielectric in terms of a representative physical thickness. teq is defined as the thickness of a theoretical SiO2 layer that would be required to have the same capacitance density as a given dielectric, ignoring leakage current and reliability considerations.
A SiO2 layer of thickness, t, deposited on a Si surface as a gate dielectric will have a teq larger than its thickness, t. This teq results from the capacitance in the surface channel on which the SiO2 is deposited due to the formation of a depletion/inversion region. This depletion/inversion region can result in teq being from 3 to 6 Angstroms (Å) larger than the SiO2 thickness, t. Thus, with the semiconductor industry driving to someday scale the gate dielectric equivalent oxide thickness to under 10 Å, the physical thickness requirement for a SiO2 layer used for a gate dielectric would be need to be approximately 4 to 7 Å.
Additional requirements on a SiO2 layer would depend on the gate electrode used in conjunction with the SiO2 gate dielectric. Using a conventional polysilicon gate would result in an additional increase in teq for the SiO2 layer. This additional thickness could be eliminated by using a metal gate electrode, though metal gates are not currently used in typical complementary metal-oxide-semiconductor field effect transistor (CMOS) technology. Thus, future devices would be designed towards a physical SiO2 gate dielectric layer of about 5 Å or less. Such a small thickness requirement for a SiO2 oxide layer creates additional problems.
Silicon dioxide is used as a gate dielectric, in part, due to its electrical isolation properties in a SiO2-Si based structure. This electrical isolation is due to the relatively large band gap of SiO2 (8.9 eV) making it a good insulator from electrical conduction. Signification reductions in its band gap would eliminate it as a material for a gate dielectric. As the thickness of a SiO2 layer decreases, the number of atomic layers, or monolayers of the material in the thickness decreases. At a certain thickness, the number of monolayers will be sufficiently small that the SiO2 layer will not have a complete arrangement of atoms as in a larger or bulk layer. As a result of incomplete formation relative to a bulk structure, a thin SiO2 layer of only one or two monolayers will not form a full band gap. The lack of a full band gap in a SiO2 gate dielectric would cause an effective short between an underlying Si channel and an overlying polysilicon gate. This undesirable property sets a limit on the physical thickness to which a SiO2 layer can be scaled. The minimum thickness due to this monolayer effect is thought to be about 7-8 Å. Therefore, for future devices to have a teq less than about 10 Å, other dielectrics than SiO2 need to be considered for use as a gate dielectric.
For a typical dielectric layer used as a gate dielectric, the capacitance is determined as one for a parallel plate capacitance: C=κε0A/t, where κ is the dielectric constant, ε0 is the permittivity of free space, A is the area of the capacitor, and t is the thickness of the dielectric. The thickness, t, of a material is related to its teq for a given capacitance, with SiO2 having a dielectric constant κox=3.9, as
t=(κ/κox)t eq=(κ/3.9)t eq.
Thus, materials with a dielectric constant greater than that of SiO2, 3.9, will have a physical thickness that can be considerably larger than a desired teq, while providing the desired equivalent oxide thickness. For example, an alternate dielectric material with a dielectric constant of 10 could have a thickness of about 25.6 Å to provide a teq of 10 Å, not including any depletion/inversion layer effects. Thus, a reduced equivalent oxide thickness for transistors can be realized by using dielectric materials with higher dielectric constants than SiO2.
The thinner equivalent oxide thickness required for lower transistor operating voltages and smaller transistor dimensions may be realized by a significant number of materials, but additional fabricating requirements makes determining a suitable replacement for SiO2 difficult. The current view for the microelectronics industry is still for Si based devices. This requires that the gate dielectric employed be grown on a silicon substrate or silicon layer, which places significant constraints on the substitute dielectric material. During the formation of the dielectric on the silicon layer, there exists the possibility that a small layer of SiO2 could be formed in addition to the desired dielectric. The result would effectively be a dielectric layer consisting of two sublayers in parallel with each other and the silicon layer on which the dielectric is formed. In such a case, the resulting capacitance would be that of two dielectrics in series. As a result, the teq of the dielectric layer would be the sum of the SiO2 thickness and a multiplicative factor of the thickness, t, of the dielectric being formed, written as
t eq =t SiO2+(κox/κ)t.
Thus, if a SiO2 layer is formed in the process, the teq is again limited by a SiO2 layer. In the event that a barrier layer is formed between the silicon layer and the desired dielectric in which the barrier layer prevents the formation of a SiO2 layer, the teq would be limited by the layer with the lowest dielectric constant. However, whether a single dielectric layer with a high dielectric constant or a barrier layer with a higher dielectric constant than SiO2 is employed, the layer interfacing with the silicon layer must provide a high quality interface to maintain a high channel carrier mobility.
One of the advantages using SiO2 as a gate dielectric has been that the formation of the SiO2 layer results in an amorphous gate dielectric. Having an amorphous structure for a gate dielectric provides for reducing problems of leakage current associated with grain boundaries in polycrystalline gate dielectrics that provide high leakage paths. Additionally, grain size and orientation changes throughout a polycrystalline gate dielectric can cause variations in the film's dielectric constant, along with uniformity and surface topography problems. Typically, materials having the advantage of a high dielectric constant relative to SiO2 also have the disadvantage of a crystalline form, at least in a bulk configuration. The best candidates for replacing SiO2 as a gate dielectric are those with high dielectric constant, which can be fabricated as a thin layer with an amorphous form.
High-κ materials include materials having a dielectric constant greater than silicon dioxide, for example, dielectrics materials having a dielectric constant greater than about twice the dielectric constant of silicon dioxide. By introducing a dopant into a high-κ metal oxide dielectric, its amorphous-to-polycrystalline temperature can be increased. The dopant acts to disturb the ordered structure of the original film. Elements usable as dopants in some high-κ materials have include Si, Al, Zr, Hf, and N. By adjusting the amount of the dopants in the original film, the physical and electrical properties of such metal oxides may be tailored. Bulk (Ta2O5)1−x(Zr2O)x polycrystalline ceramics, formed by mixing powders of Ta2O5 and Zr2O and sintering at high temperatures, have increased dielectric constants with respect to Ta2O5 for certain amounts of Zr in the bulk (Ta2O5)1−x(Zr2O)x structure.
An appropriate high-κ gate dielectric should have a large energy gap (Eg) and large energy barrier heights with Si for both electrons and holes. Generally, the bandgap is inversely related to the dielectric constant for a high-κ material, which lessens some advantages of the high-κ material. Tantalum oxide (Ta2O5) is a potential replacement for SiO2. It has a bandgap of about 4.5 eV and a dielectric constant of about 26. Further, Ta2O5 is a suitable candidate for engineering its physical and electrical properties by doping, since its structure does not change significantly with the addition of a substantial amount of another oxide. However, forming Ta2O5 on a silicon substrate may result in an interface layer that contains SiO2, in particular at processing temperatures above 700� C. The material composition and its properties of an interface layer are typically dependent on process conditions and the condition of the substrate before forming the dielectric layer. Though the existence of an interface layer may effectively reduce the dielectric constant associated with the dielectric layer and its substrate interface layer, a SiO2 interface layer or other composition interface layer, may improve the interface density, fixed charge density, and channel mobility of a device having this interface layer.
An embodiment for a method for forming a dielectric layer includes forming a dielectric film containing a zirconium-doped tantalum oxide by depositing tantalum on a substrate surface by atomic layer deposition and by depositing zirconium by atomic layer deposition on the substrate surface. Embodiments include structures for capacitors, transistors, memory devices, and electronic systems with dielectric layers containing atomic layer deposited zirconium-doped tantalum oxide, and methods for forming such structures.
Embodiments for forming a tantalum oxide layer, or film, by atomic layer deposition include doping the tantalum oxide with zirconium. An undoped tantalum oxide film may be a film having a specific stoichiometry such as Ta2O5 or it may be a non-stoichiometric tantalum oxide, TayOx, which is represented herein as TaOx. The zirconium doping may be performed as a doping by zirconium atoms or by zirconium oxide ZrOx, where x may be x=2. The resulting film may be considered TaOx doped with Zr or ZrOx.
Embodiments of dielectric layers containing an atomic layer deposited zirconium-doped tantalum oxide layer have a larger dielectric constant than silicon dioxide. Such dielectric layers provide a significantly thinner equivalent oxide thickness compared with a silicon oxide layer having the same physical thickness. Alternately, such dielectric layers provide a significantly thicker physical thickness than a silicon oxide layer having the same equivalent oxide thickness. This increased physical thickness aids in reducing leakage current.
Another consideration for selecting the material and method for forming a dielectric film for use in electronic devices and systems concerns the roughness of a dielectric film on a substrate. Surface roughness of the dielectric film has a significant effect on the electrical properties of the gate oxide, and the resulting operating characteristics of the transistor. The leakage current through a physical 1.0 nm gate oxide increases by a factor of 10 for every 0.1 increase in the root-mean-square (RMS) roughness.
During a conventional sputtering deposition process stage, particles of the material to be deposited bombard the surface at a high energy. When a particle hits the surface, some particles adhere, and other particles cause damage. High energy impacts remove body region particles creating pits. The surface of such a deposited layer can have a rough contour due to the rough interface at the body region.
In an embodiment, a zirconium-doped tantalum oxide dielectric film having a substantially smooth surface relative to other processing techniques is formed using atomic layer deposition (ALD). Further, forming such a dielectric film using atomic layer deposition can provide for controlling transitions between material layers. Thus, atomic layer deposited zirconium-doped tantalum oxide dielectric films can have an engineered transition with a substrate surface.
ALD, also known as atomic layer epitaxy (ALE), is a modification of chemical vapor deposition (CVD) and is also called "alternatively pulsed-CVD." In ALD, gaseous precursors are introduced one at a time to the substrate surface mounted within a reaction chamber (or reactor). This introduction of the gaseous precursors takes the form of pulses of each gaseous precursor. In a pulse of a precursor gas, the precursor gas is made to flow into a specific area or region for a short period of time. Between the pulses, the reaction chamber is purged with a gas, which in many cases is an inert gas, and/or evacuated.
In a chemisorption-saturated ALD (CS-ALD) process, during the first pulsing phase, reaction with the substrate occurs with the precursor saturatively chemisorbed at the substrate surface. Subsequent pulsing with a purging gas removes precursor excess from the reaction chamber.
The second pulsing phase introduces another precursor on the substrate where the growth reaction of the desired film takes place. Subsequent to the film growth reaction, reaction byproducts and precursor excess are purged from the reaction chamber. With favourable precursor chemistry where the precursors adsorb and react with each other on the substrate aggressively, one ALD cycle can be preformed in less than one second in properly designed flow type reaction chambers. Typically, precursor pulse times range from about 0.5 sec to about 2 to 3 seconds.
In ALD, the saturation of all the reaction and purging phases makes the growth self-limiting. This self-limiting growth results in large area uniformity and conformality, which has important applications for such cases as planar substrates, deep trenches, and in the processing of porous silicon and high surface area silica and alumina powders. Significantly, ALD provides for controlling film thickness in a straightforward manner by controlling the number of growth cycles.
ALD was originally developed to manufacture luminescent and dielectric films needed in electroluminescent displays. Significant efforts have been made to apply ALD to the growth of doped zinc sulfide and alkaline earth metal sulfide films. Additionally, ALD has been studied for the growth of different epitaxial II-V and II-VI films, nonepitaxial crystalline or amorphous oxide and nitride films and multilayer structures of these. There also has been considerable interest towards the ALD growth of silicon and germanium films, but due to the difficult precursor chemistry, this has not been very successful.
The precursors used in an ALD process may be gaseous, liquid or solid. However, liquid or solid precursors should be volatile. The vapor pressure should be high enough for effective mass transportation. Also, solid and some liquid precursors may need to be heated inside the reaction chamber and introduced through heated tubes to the substrates. The necessary vapor pressure should be reached at a temperature below the substrate temperature to avoid the condensation of the precursors on the substrate. Due to the self-limiting growth mechanisms of ALD, relatively low vapor pressure solid precursors can be used though evaporation rates may somewhat vary during the process because of changes in their surface area.
There are several other requirements for precursors used in ALD. The precursors should be thermally stable at the substrate temperature because their decomposition would destroy the surface control and accordingly the advantages of the ALD method which relies on the reaction of the precursor at the substrate surface. A slight decomposition, if slow compared to the ALD growth, can be tolerated.
The precursors should chemisorb on or react with the surface, though the interaction between the precursor and the surface as well as the mechanism for the adsorption is different for different precursors. The molecules at the substrate surface should react aggressively with the second precursor to form the desired solid film. Additionally, precursors should not react with the film to cause etching, and precursors should not dissolve in the film. Using highly reactive precursors in ALD contrasts with the selection of precursors for conventional CVD.
The by-products in the reaction should be gaseous in order to allow their easy removal from the reaction chamber. Further, the by-products should not react or adsorb on the surface.
In a reaction sequence ALD (RS-ALD) process, the self-limiting process sequence involves sequential surface chemical reactions. RS-ALD relies on chemistry between a reactive surface and a reactive molecular precursor. In an RS-ALD process, molecular precursors are pulsed into the ALD reaction chamber separately. The metal precursor reaction at the substrate is typically followed by an inert gas pulse to remove excess precursor and by-products from the reaction chamber prior to pulsing the next precursor of the fabrication sequence.
By RS-ALD, films can be layered in equal metered sequences that are all identical in chemical kinetics, deposition per cycle, composition, and thickness. RS-ALD sequences generally deposit less than a full layer per cycle. Typically, a deposition or growth rate of about 0.25 to about 2.00 Å per RS-ALD cycle can be realized.
The advantages of RS-ALD include continuity at an interface avoiding poorly defined nucleating regions that are typical for chemical vapor deposition (<20 Å) and physical vapor deposition (<50 Å), conformality over a variety of substrate topologies, use of low temperature and mildly oxidizing processes, lack of dependence on the reaction chamber, growth thickness dependent solely on the number of cycles performed, and ability to engineer multilayer laminate films with resolution of one to two monolayers. RS-ALD processes RS-ALD allows for deposition control on the order on monolayers and the ability to deposit monolayers of amorphous films.
Herein, a sequence refers to the ALD material formation based on an ALD reaction of one precursor with its reactant precursor. For example, forming tantalum oxide from a TaI4 precursor and H2O2, as its reactant precursor, forms an embodiment of a tantalum/oxygen sequence, which can also be referred to as tantalum sequence. A cycle of a sequence includes pulsing a precursor, pulsing a purging gas for the precursor, pulsing a reactant precursor, and pulsing the reactant's purging gas.
In an embodiment, a layer of zirconium-doped TaOx is formed on a substrate mounted in a reaction chamber using ALD in a repetitive sequence using precursor gases individually pulsed into the reaction chamber. Alternately, solid or liquid precursors can be used in an appropriately designed reaction chamber.
Also included in the ALD system are purging gas sources 161, 162, each of which is coupled to mass-flow controllers 166, 167, respectively. Furthermore, additional purging gas sources can be constructed in ALD system 100, one purging gas source for each precursor gas, for example. For a process that uses the same purging gas for multiple precursor gases less purging gas sources are required for ALD system 100. Gas sources 151-154 and purging gas sources 161-162 are coupled by their associated mass-flow controllers to a common gas line or conduit 170 which is coupled to the gas-distribution fixture 140 inside the reaction chamber 120. Gas conduit 170 is also coupled to vacuum pump, or exhaust pump, 181 by mass-flow controller 186 to remove excess precursor gases, purging gases, and by-product gases at the end of a purging sequence from the gas conduit.
Vacuum pump, or exhaust pump, 182 is coupled by mass-flow controller 187 to remove excess precursor gases, purging gases, and by-product gases at the end of a purging sequence from reaction chamber 120. For convenience, control displays, mounting apparatus, temperature sensing devices, substrate maneuvering apparatus, and necessary electrical connections as are known to those skilled in the art are not shown in
The use, construction and fundamental operation of reaction chambers for deposition of films are understood by those of ordinary skill in the art of semiconductor fabrication. The present invention man be practiced on a variety of such reaction chambers without undue experimentation. Furthermore, one of ordinary skill in the art will comprehend the necessary detection, measurement, and control techniques in the art of semiconductor fabrication upon reading the disclosure.
The elements of ALD system 100 can be controlled by a computer. To focus on the use of ALD system 100 in the various embodiments of the present invention, the computer is not shown. Those skilled in the art can appreciate that the individual elements such as pressure control, temperature control, and gas flow within ALD system 100 can be under computer control.
In the embodiment of
In the embodiment of
Atomic layer deposition of the individual components of the zirconium-doped TaOx layer allows for individual control of each precursor pulsed into the reaction chamber. Thus, each precursor is pulsed into the reaction chamber for a predetermined period, where the predetermined period can be set separately for each precursor. Additionally, for various embodiments for ALD formation of a zirconium-doped TaOx layer, each precursor can be pulsed into the reaction under separate environmental conditions. The substrate can be maintained at a selected temperature and the reaction chamber maintained at a selected pressure independently for pulsing each precursor. Appropriate temperatures and pressures may be maintained, whether the precursor is a single precursor or a mixture of precursors. During atomic layer deposition, the pulsing of the precursor gases is separated by purging the reaction chamber with a purging gas following each pulsing of a precursor. In an embodiment, nitrogen gas is used as the purging gas following the pulsing of each precursor used in a cycle to form a film of zirconium-doped TaOx. Additionally, the reaction chamber can also be purged by evacuating the reaction chamber.
The sequencing of the formation of the regions of the transistor being processed follows typical sequencing that is generally performed in the fabrication of a MOS transistor as is well known to those skilled in the art. Included in the processing prior to forming a gate dielectric is the masking of substrate regions to be protected during the gate dielectric formation, as is typically performed in MOS fabrication. In this embodiment, the unmasked region includes a body region of a transistor, however one skilled in the art will recognize that other semiconductor device structures may utilize this process. Additionally, the substrate 110 in its ready for processing form is conveyed into a position in reaction chamber 120 for ALD processing.
At 510, a tantalum containing precursor is pulsed into reaction chamber 120. In an embodiment, Ta(OC2H5)5 is used as a precursor. The Ta(OC2H5)5 is pulsed into reaction chamber 120 through the gas-distribution fixture 140 onto substrate 110. The flow of the Ta(OC2H5)5 is controlled by mass-flow controller 156 from gas source 151, where the Ta(OC2H5)5 is maintained at about 105� C. The pressure in reaction chamber is at about 10 mbar nitrogen pressure. In another embodiment, the substrate temperature is maintained between about 250� C. and about 325� C. by heating element 130. The upper bound of 325� C. is the highest temperature for Ta2O5 to form in the self-controlled growth regime. The Ta(OC2H5)5 reacts with the surface of the substrate 110 in the desired region defined by the unmasked areas of the substrate 110. In other embodiments, a tantalum containing precursor includes TaCl5.
At 515, a first purging gas is pulsed into the reaction chamber 120. In particular, nitrogen is used as a purging gas and a carrier gas. The nitrogen flow is controlled by mass-flow controller 166 from the purging gas source 161 into the gas conduit 170. Using the pure nitrogen purge avoids overlap of the precursor pulses and possible gas phase reactions. Following the purge, an oxygen containing precursor is pulsed into the reaction chamber 120, at 520.
For the tantalum sequence using a Ta(OC2H5)5 or TaCl5 as the precursor, water vapor is selected as the precursor acting as a reactant to form TaOx on the substrate 110. The H2O vapor is pulsed into the reaction chamber 120 through gas conduit 170 from gas source 152 by mass-flow controller 157. The water vapor aggressively reacts at the surface of substrate 110.
Following the pulsing of an oxygen containing precursor, a second purging gas is injected into the reaction chamber 120, at 525. Nitrogen gas is used to purge the reaction chamber after pulsing each precursor gas in the tantalum/oxygen sequence. Excess precursor gas, and reaction by-products are removed from the system by the purge gas in conjunction with the exhausting of the reaction chamber 120 using vacuum pump 182 through mass-flow controller 187, and exhausting of the gas conduit 170 by the vacuum pump 181 through mass-flow controller 186.
At 530, the pulsing of the tantalum containing precursor, the pulsing of the oxygen containing precursor, and the pulsing of the first and second purging gas are repeated for a number of cycles. After repeating the tantalum/oxygen sequence for a selected number of cycles, a zirconium containing precursor is pulsed into the reaction chamber 120, at 535.
In an embodiment, ZrI4 is used as the zirconium containing precursor. Alternately, ZrCl4 may be used as the zirconium containing precursor. The ZrI4 precursor having a purity of about 99.5% or greater is evaporated from a containment area held at about 240� C. in gas source 152. Mass-flow controller 158 regulates the pulsing of the ZrI4 precursor to the surface of the substrate 110 through gas-distribution fixture 140 from gas source 152. In an embodiment, the substrate temperature is maintained between about 230� C. and about 500� C. by heating element 130.
At 540, a third purging gas is introduced into the system. Nitrogen gas can also be used as a purging and carrier gas. The nitrogen flow is controlled by mass-flow controller 167 from the purging gas source 162 into the gas conduit 170 and subsequently into the reaction chamber 120. In another embodiment, argon gas is used as the purging gas. Following the pulsing of the third purging gas, a reactant precursor is pulsed into the reaction chamber 120, at 545. The reactant precursor is selected to produce an oxidizing reaction for the zirconium at the substrate surface. In an embodiment, the reactant precursor is H2O-H2O2 vapor. Mass-flow controller 159 regulates the H2O-H2O2 vapor pulsing into reaction chamber 120 through gas conduit 170 from gas source 153. The H2O-H2O2 vapor aggressively reacts at the surface of substrate 110.
Following the pulsing of the reactant precursor, a fourth purging gas is injected into reaction chamber 120, at 550. Nitrogen gas may be used to purge the reaction chamber after pulsing each precursor gas in the zirconium/oxygen sequence. In another embodiment, argon gas may be used as the purging gas. Excess precursor gas, and reaction by-products are removed from the system by the purge gas in conjunction with the exhausting of reaction chamber 120 using vacuum pump 182 through mass-flow controller 187, and exhausting of the gas conduit 170 by the vacuum pump 181 through mass-flow controller 186.
During a ZrI4/H2O-H2O2 vapor sequence, the substrate is held between about 230� C. and about 500� C. by the heating element 130 with reaction chamber 120 held at about 250 Pa. In an embodiment, the ZrI4 pulse time is about 2.0 sec. After the ZrI4 pulse, the zirconium sequence continues with a purge pulse followed by a H2O-H2O2 vapor pulse followed by a purge pulse. In an embodiment, the H2O-H2O2 vapor pulse time is about 2.0 sec, and the ZrI4 and the H2O-H2O2 vapor purging pulse times are each at about 2.0 sec.
At 555, a determination is made as to whether the number of substituted zirconium cycles has equaled a predetermined number. The predetermined number of substitution cycles is selected to set the percentage of zirconium dopant in the TaOx film. In an embodiment, the percentage is set ranging from about 5% to about 40% zirconium in the zirconium-doped TaOx film with respect to an atomic ratio of zirconium atoms to the sum of zirconium and tantalum atoms. If the number of completed substitution cycles is less than the predetermined number, the zirconium containing precursor is pulsed into the reaction chamber, at 535, and the process continues. If the number of completed substitution cycles equals the predetermined number, then a determination is made as to whether a total number of combined cycles has been completed to form a desired thickness, at 560. If the total number of cycles to form the desired thickness has not been completed, a number of cycles for the tantalum/oxygen sequence is repeated, at 530, and the process continues. If the total number of cycles to form the desired thickness has been completed, the dielectric film containing zirconium-doped TaOx may optionally be annealed. The zirconium-doped TaOx film processed at these relatively low temperatures may provide an amorphous layer.
The thickness of a zirconium-doped TaOx film is determined by a fixed growth rate for the pulsing periods and precursors used, set at a value such as N nm/combined cycle, dependent upon the number of cycles of the zirconium sequence relative to the tantalum sequence that form a combined sequence. For a desired zirconium-doped TaOx film thickness, t, in an application such as forming a gate dielectric of a MOS transistor, the ALD process is repeated for t/N total combined cycles. Once the t/N cycles have completed, no further ALD processing for zirconium-doped TaOx is required.
In various embodiments, the presence of residual chlorine in a zirconium-doped TaOx dielectric film may be reduced or eliminated providing a substantially chlorine free film by using metal precursors other than metal chlorides in the ALD processing of each metal, tantalum and zirconium. Use of a metal iodine as a precursor results in a film substantially free of residual iodine. As a result, metal halide precursors other than chloride metal precursors may be used. Eliminating residual chloride in such dielectric films may provide reduced leakage current for devices having these dielectric films.
At 570, after forming the zirconium-doped TaOx, processing the device having the dielectric layer containing zirconium-doped TaOx is completed. In an embodiment, completing the device includes completing the formation of a transistor. In another embodiment, completing the device includes completing the formation of a capacitor. Alternately, completing the process includes completing the construction of a memory device having an array with access transistors formed with gate dielectrics containing atomic layer deposited zirconium-doped TaOx. Further, in another embodiment, completing the process includes the formation of an electronic system including an information handling device that uses electronic devices with transistors formed with dielectric films containing atomic layer deposited zirconium-doped TaOx. Typically, information handling devices such as computers include many memory devices, having many access transistors.
It can appreciated by those skilled in the art that the elements of a method for forming an atomic layer deposited zirconium-doped TaOx film in the embodiment of
A reactant containing precursor is pulsed into reaction chamber 120, at 625. The reactant containing precursor provides an oxidizing reaction at substrate 110. A second purging gas is pulsed into reaction chamber 120, at 630. Completing the pulsing of the second purging gas into reaction chamber 120 completes one cycle for a tantalum-zirconium dopant sequence. Then, it is determined whether the total number of cycles for the tantalum-zirconium dopant sequence has been reached to form the desired thickness for a dielectric film containing zirconium-doped TaOx, at 640.
If the total number of cycles to form the desired thickness has not been completed, the tantalum containing precursor is pulsed into reaction chamber, at 610, and the process continues. If the total number of cycles to form the desired thickness has been completed, the dielectric film containing zirconium-doped TaOx can be annealed. The zirconium-doped TaOx formed is amorphous and remains amorphous after annealing.
The thickness of a zirconium-doped TaOx film is determined by a fixed growth rate for the pulsing periods and precursors used, set at a value such as N nm/cycle, dependent upon the tantalum precursor/zirconium dopant precursor mixture used. For a desired zirconium-doped TaOx film thickness, t, in an application such as forming a gate dielectric of a MOS transistor, the ALD process is repeated for t/N total cycles. Once the t/N cycles have completed, no further ALD processing for zirconium-doped TaOx is required. After forming the zirconium-doped TaOx, processing the device having the dielectric layer containing zirconium-doped TaOx is completed, at 645, in a similar manner as for 570 of
It can appreciated by those skilled in the art that the elements of a method for forming an atomic layer deposited zirconium-doped TaOx film in the embodiment of
The embodiments described herein provide a process for growing a dielectric film having a wide range of useful equivalent oxide thickness, teq, associated with a dielectric constant in the range from about 8 to about 27. This range of dielectric constants provides for a teq ranging from about 14% to about 48% of a given silicon dioxide thickness. Alternately, for an acceptable silicon dioxide thickness, an embodiment for a zirconium-doped tantalum oxide may be from two to seven times larger than the acceptable silicon dioxide thickness providing enhanced probability for reducing leakage current. Further, dielectric films of zirconium-doped TaOx formed by atomic layer deposition can provide not only thin teq films, but also films with relatively low leakage current. Doping with zirconium yields a doped amorphous TaOx with enhanced leakage current characteristics. Additionally, the novel process can be implemented to form transistors, capacitors, memory devices, and other electronic systems including information handling devices.
A transistor 700 as depicted in
A gate 750 is formed over gate dielectric 740. Typically, forming gate 750 may include forming a polysilicon layer, though a metal gate may be formed in an alternative process. An interfacial layer 733 may form between body region 732 and gate dielectric 740. In an embodiment, interfacial layer 733 may be limited to a relatively small thickness compared to gate dielectric 740, or to a thickness significantly less than gate dielectric 740 as to be effectively eliminated. Forming the substrate, the source and drain regions, and the gate is performed using standard processes known to those skilled in the art. Additionally, the sequencing of the various elements of the process for forming a transistor is conducted with standard fabrication processes, also as known to those skilled in the art. In an embodiment, gate dielectric 740 may be realized as a gate insulator in a silicon CMOS transistor. Use of a gate dielectric containing zirconium-doped tantalum oxide is not limited to silicon based substrates, but may be used with a variety of semiconductor substrates.
The embodiments of methods for forming dielectric layers containing an atomic layer deposited zirconium-doped TaOx dielectric film may also be applied to forming capacitors in various integrated circuits, memory devices, and electronic systems. In an embodiment for forming a capacitor 900 illustrated in
Various embodiments for a dielectric film containing atomic layer deposited zirconium-doped tantalum oxide provide for enhanced device performance by providing devices with reduced leakage current. Further improvements in leakage current characteristics may be attained by forming one or more layers of an atomic layer deposited zirconium-doped tantalum oxide in a nanolaminate structure with other metal oxides such as TaOx and ZrOx. The transition from one layer of the nanolaminate to another layer of the nanolaminate provides further disruption to a tendency for an ordered structure in the nanolaminate stack. The term "nanolaminate" means a composite film of ultra thin layers of two or more materials in a layered stack, where the layers are alternating layers of materials of the composite film. Typically, each layer in a nanolaminate has a thickness of an order of magnitude in the nanometer range. Further, each individual material layer of the nanolaminate can have a thickness as low as a monolayer of the material or as high as 20 nanometers. A TaOx/ZrOx/zirconium-doped TaOx nanolaminate contains alternating layers of TaOx and ZrOx and zirconium-doped TaOx.
Transistors, capacitors, and other devices having dielectric films containing atomic layer deposited zirconium-doped TaOx formed by the methods described above may be implemented into memory devices and electronic systems including information handling devices. Embodiments of these information handling devices may include wireless systems, telecommunication systems, and computers. Further, embodiments of electronic devices having dielectric films containing atomic layer deposited zirconium-doped tantalum oxide may be realized as integrated circuits.
Peripheral devices 1245 may include displays, additional storage memory, or other control devices that may operate in conjunction with controller 1205. Alternately, peripheral devices 1245 may include displays, additional storage memory, or other control devices that may operate in conjunction with controller 1205 and/or memory 1225.
Memory 1225 may be realized as a memory device containing an atomic layer deposited zirconium-doped TaOx dielectric layer. It will be understood that embodiments are equally applicable to any size and type of memory circuit and are not intended to be limited to a particular type of memory device. Memory types include a DRAM, SRAM (Static Random Access Memory) or Flash memories. Additionally, the DRAM could be a synchronous DRAM commonly referred to as SGRAM (Synchronous Graphics Random Access Memory), SDRAM (Synchronous Dynamic Random Access Memory), SDRAM II, and DDR SDRAM (Double Data Rate SDRAM), as well as Synchlink or Rambus DRAMs and other emerging DRAM technologies.
Zirconium-doped tantalum oxide films formed by atomic layer deposition processed in relatively low temperatures can be amorphous and possess smooth surfaces. Such zirconium-doped tantalum oxide films can provide enhanced electrical properties due to their smoother surface resulting in reduced leakage current. Additionally, zirconium-doped tantalum oxide films by atomic layer deposition may also provide reduced leakage current while providing an increased dielectric constant as compared with undoped tantalum oxide and pure zirconium oxide layers. Additionally, such dielectric layers provide a significantly thicker physical thickness than a silicon oxide layer having the same equivalent oxide thickness, where the increased thickness would also reduce leakage current. These properties of layers containing atomic layer deposited zirconium-doped tantalum oxide films allow for application as dielectric layers in numerous electronic devices and systems.
Capacitors, transistors, higher level ICs or devices including memory devices, and electronic systems are constructed utilizing the novel process for forming a dielectric film having an ultra thin equivalent oxide thickness, teq. Gate dielectric layers or films containing atomic layer deposited zirconium-doped tantalum oxide are formed having a dielectric constant (κ) substantially higher than that of silicon oxide, such that these dielectric films are capable of a teq thinner than SiO2 gate dielectrics of the same physical thickness. Alternately, the high dielectric constant relative to silicon dioxide allows the use of much larger physical thickness of these high-κ dielectric materials for the same teq of SiO2. Forming the relatively larger thickness aids in processing gate dielectrics and other dielectric layers in electronic devices and systems.
Although specific embodiments have been illustrated and described herein, it will be appreciated by those of ordinary skill in the art that any arrangement that is calculated to achieve the same purpose may be substituted for the specific embodiments shown. This application is intended to cover any adaptations or variations of embodiments of the present invention. It is to be understood that the above description is intended to be illustrative, and not restrictive, and that the phraseology or terminology employed herein is for the purpose of description and not of limitation. Combinations of the above embodiments and other embodiments will be apparent to those of skill in the art upon studying the above description. The scope of the present invention includes any other applications in which embodiment of the above structures and fabrication methods are used. The scope of the embodiments of the present invention should be determined with reference to the appended claims, along with the full scope of equivalents to which such claims are entitled.
|Citing Patent
|Filing date
|Publication date
|Apr 28, 2005
|Feb 16, 2010
|Micron Technology, Inc.
|Atomic layer deposition of a ruthenium layer to a lanthanide oxide dielectric layer
|Jan 5, 2007
|Mar 2, 2010
|Micron Technology, Inc.
|Methods for atomic-layer deposition
|Dec 1, 2006
|Apr 20, 2010
|Micron Technology, Inc.
|Hafnium titanium oxide films
|Feb 16, 2006
|May 4, 2010
|Micron Technology, Inc.
|Conductive layers for hafnium silicon oxynitride films
|Aug 29, 2005
|May 18, 2010
|Micron Technology, Inc.
|Ruthenium layer for a dielectric layer containing a lanthanide oxide
|Jul 26, 2006
|Jun 1, 2010
|Micron Technology, Inc.
|Zirconium-doped tantalum oxide films
|Dec 8, 2006
|Aug 17, 2010
|Micron Technology, Inc.
|Zirconium-doped tantalum oxide films
|Dec 8, 2006
|Jan 11, 2011
|Micron Technology, Inc.
|Method of fabricating an apparatus having a lanthanum-metal oxide dielectric layer
|Jul 11, 2008
|Apr 12, 2011
|Micron Technology, Inc.
|Methods of forming electronic devices containing Zr-Sn-Ti-O films
|Jul 20, 2005
|Apr 19, 2011
|Micron Technology, Inc.
|Devices with nanocrystals and methods of formation
|Feb 7, 2012
|Micron Technology, Inc.
|Graded dielectric layers
|Jul 24, 2008
|Oct 23, 2012
|Intermolecular, Inc.
|Nonvolatile memory element including resistive switching metal oxide layers
|Dec 27, 2011
|Nov 27, 2012
|Intermolecular, Inc.
|Nonvolatile memory elements
|Aug 21, 2009
|Mar 5, 2013
|Industrial Technology Research Institute
|Capacitor substrate structure
|Oct 19, 2012
|Nov 26, 2013
|Intermolecular, Inc.
|Nonvolatile memory elements
|Nov 28, 2011
|Jul 22, 2014
|Micron Technology, Inc.
|Conductive layers for hafnium silicon oxynitride
|Dec 18, 2012
|Dec 9, 2014
|Intermolecular, Inc.
|Controlling ReRam forming voltage with doping
|Feb 3, 2012
|Feb 10, 2015
|Micron Technology, Inc.
|Graded dielectric structures
|Jan 7, 2005
|Jun 9, 2005
|Micron Technology, Inc.
|Lanthanide doped TiOx dielectric films by plasma oxidation
|Jul 24, 2008
|Jan 29, 2009
|Malhotra Sandra G
|Nonvolatile memory elements
|Dec 27, 2011
|May 17, 2012
|Intermolecular, Inc.
|Nonvolatile Memory Elements
|Mar 7, 2013
|Intermolecular, Inc.
|Nonvolatile Memory Elements
|U.S. Classification
|438/648, 438/656
|International Classification
|Cooperative Classification
|European Classification


text:
- Home
- On Court
- About Ana
- Club Ana
- Multimedia
- Contact
- Shop
- Sponsors
Ana has been drawn in the Sredets Group at the GARANTi KOZA Tournament of Champions Sofia. She is seeded second at the eight-woman event.
Ana will take on home favourite and fellow wild card Tsvetana Pironkova, Australian Samantha Stosur and Russia's Elena Vesnina in the round-robin format. The top two players from the group will advance to Saturday's semi-finals.
Ana begins her campaign on Tuesday at 5pm local time (11am Eastern Time) against Pironkova.
Also known as Group B, Sredets is a town in the southeast of Bulgaria.
The other group, named Serdika, contains No.1 Simona Halep, Maria Kirilenko, Anastasia Pavlyuchenkova and Alize Cornet.
Click here for live point-by-point scoring from the Arena Armeec.


text:
121 Diamond Spring Road
|M - Thu:
|9:30am - 9:00pm
|9:30am - 5:00pm
|9:30am - 5:00pm
We know how busy your Saturdays are and that it can be hard to find time to stop in the Library for a program. We have the solution!
Open to all ages, stop by the Library on Saturday, October 19th any time between 11:00 am and 12:00 pm to make a cool scarecrow craft. This is a drop-in activity, meaning that you and your child can come at your convenience during the 11 o'clock hour to make this craft together. We'll supply all the materials and instructions. Just bring your creativity!
Spend a fun morning together! No registration is necessary. See you soon!
© 2011 Denville Public Library. All rights reserved.
121 Diamond Spring Road
Denville, NJ 07834


text:
- Musician's Friend Best Selection, Price & Service. Guaranteed.
Call our Gear Heads
at: 800-449-9128
Call our Gear Heads
at: 800-449-9128
This Meinl Frame Drum Tipper is constructed of ash wood and specially carved for a comfortable grip. Available in 5 sizes, this is the traditional drumstick used to play the Irish bodhran drum.
Bodhran Tipper
Review Snapshot®by PowerReviews
Reviewed by 2 customers
Sort by
Best Uses
Comments about Meinl Bodhran Tipper:
I was at a session the other night and decided to try out this tipper. It was fine at first, nice and light without loosing any sound.however, as the night went on, I noticed that paid t was rubbing off of the tipper and onto the skin. The rigges are also placed right in the grip which gave me blisters. I ultimately switched back to my old tipper. I wouldn't use this tipper for a full session, but a begginer shouldn't have these problems. I think you could get a better tipper for the same price though.
Best Uses
Comments about Meinl Bodhran Tipper:
great feel in my hand, easy to hold on to, not too heavy yet spot on "thump"
Our product catalog varies by country due to manufacturer restrictions. If you change the Ship-To country, some or all of the items in your cart may not ship to the new destination.


text:
Drama, SciFi/Fantasy, Romance
Six years ago, a NASA probe returning to earth with samples of an alien life form crashed over Central America. Soon after, new life forms began to appear, and half of Mexico was quarantined as an "infected zone.". Today, the American and Mexican military still struggle to contain "the creatures"... The story begins when a U.S. journalist agrees to escort a shaken American tourist through the infected zone in Mexico to the safety of the U.S. border.
Cast: Scoot McNairy, Whitney Able
Produced by: James Richardson, Allan Niblo
Directed by: Gareth Edwards
Written by: Gareth Edwards
Running time: 1hr 32min
Opens: Oct 29, 2010 NY/LA
|Theaters for Today
Pick a day
on this day.


text:
Disclaimer : the statements and communications
contained herein are intended for information only. None of them constitutes an offer to
sell or a solicitation for offers to buy a futures contract, security or option which is
admitted to trading on the exchanges, or any other futures contract, issue or product
described herein. SYMEX is not liable for the completeness or correctness of the
information given. Actions based on the statements made herein are the responsibility of
those who perform them. SYMEX is not liable for damage caused by actions taken as a result
of the information contained on this or any of the following pages. The site visitor
agrees not to alter the presentation, reproduce, retransmit, disseminate, sell,
distribute, publish, broadcast, circulate or commercially exploit the information in any
manner without the express written consent of SYMEX; nor to use the Information for any
unlawful purpose. The site visitor must access the information manually by request and not
programmatically by macro or other automated means.
15 minute-delayed-Euronext-data provided by CHARTINVESTOR.COM, a subsidiary of SYMEX ECONOMICS SA
other exchanges : end-of-day data