text:
|Publication number
|Publication type
|Application number
|Publication date
|Aug 24, 2006
|Filing date
|Feb 23, 2005
|Priority date
|Feb 23, 2005
|Also published as
|Publication number
|Kie Ahn, Leonard Forbes
|Original Assignee
|Micron Technology, Inc.
|Export Citation
|BiBTeX, EndNote, RefMan
|Referenced by (37), Classifications (34), Legal Events (3)
|External Links: USPTO, USPTO Assignment, Espacenet
This application relates generally to semiconductor devices and device fabrication and, more particularly, to dielectric layers and their method of fabrication.
The semiconductor industry has a market driven need to reduce the size of devices such as transistors, and to thus increase the operational speed of the device as well as reduce the device power consumption. To reduce transistor size, the thickness of the silicon dioxide, SiO2, gate dielectric is reduced in proportion to the shrinkage of the gate length. For example, a metal-oxide-semiconductor field effect transistor (MOSFET) would use a 1.5 nm thick SiO2 gate dielectric for a gate length of less than 100 nm. This scaling of gate dielectric thickness may be the most difficult issue facing the production of the next generation of MOSFETs. These increasingly smaller, faster, lower power consumption and more reliable integrated circuits (ICs) will likely be used in manufacturing products such as processor chips, mobile telephones, and memory devices such as dynamic random access memories (DRAMs).
Currently, the semiconductor industry reduces (or scales down) all of the dimensions of its basic devices, such as the silicon based MOSFET, to achieve the required improved operation. As mentioned, this device scaling includes scaling the gate dielectric, which has primarily been formed of silicon dioxide (SiO2). A thermally grown amorphous SiO2 layer provides a good electrically and thermodynamically stable material, where the interface of the SiO2 layer with underlying silicon provides a high quality interface as well as superior electrical isolation properties. However, continued scaling in microelectronic devices has created problems as the gate dielectric has become thinner, such as increased leakage currents passing through the gate dielectric. Thus there is a need to develop other dielectric materials for use as gate dielectrics, in particular dielectric materials with higher dielectric constants (k) than the relatively low k value of silicon dioxide.
The above mentioned problems are addressed by the present invention and will be understood by reading and studying the following specification. An embodiment for a method for forming an electronic device includes forming a dielectric layer by using atomic layer deposition (ALD) technique to form a dielectric having hafnium nitride, Hf3N4, and hafnium oxide, HfO2. An embodiment includes forming an integrated circuit having a dielectric made by using an atomic layer deposition to form hafnium nitride layers and hafnium oxide layers, and having a conductive layer on the dielectric. Either the hafnium nitride or the hafnium oxide may be deposited first, and there may be single layers of each, or multiple layers of either or both materials. Another embodiment includes a method of forming a memory array having an atomic layer deposited dielectric formed of hafnium nitride and hafnium oxide, contacting a conductive layer and forming an address decoder coupled to the memory array.
Embodiments include structures for capacitors, transistors, memory devices, and electronic systems with dielectric layers containing an atomic layer deposited hafnium nitride and hafnium oxide dielectric, and methods for forming such structures. These and other aspects, embodiments, advantages, and features will become apparent from the following description and the referenced drawings.
The following detailed description refers to the accompanying drawings that show, by way of illustration, specific aspects and embodiments in which the present invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the present invention. Other embodiments may be utilized and structural, logical, and electrical changes may be made without departing from the scope of the present invention. The various embodiments are not necessarily mutually exclusive, as some embodiments can be combined with one or more other embodiments to form new embodiments.
The terms wafer and substrate used in the following description include any structure having an exposed surface with which to form an integrated circuit (IC) structure. The term substrate is understood to include semiconductor wafers. The term substrate is also used to refer to semiconductor structures during processing, and may include other layers that have been fabricated thereupon. Both wafer and substrate include doped and undoped semiconductors, epitaxial semiconductor layers supported by a base semiconductor or insulator, as well as other semiconductor structures well known to one skilled in the art. The term conductor is understood to generally include n-type and p-type semiconductors, and the term insulator or dielectric is defined to include any material that is less electrically conductive than the materials referred to as conductors or as semiconductors.
The term "horizontal" as used in this application is defined as a plane parallel to the conventional plane or surface of a wafer or substrate, regardless of the orientation of the wafer or substrate. The term "vertical" refers to a direction perpendicular to the horizontal as defined above. Prepositions, such as "on", "side" (as in "sidewall"), "higher", "lower", "over" and "under" are defined with respect to the conventional plane or surface being on the top surface of the wafer or substrate, regardless of the orientation of the wafer or substrate. The following detailed description is, therefore, not to be taken in a limiting sense, and the scope of the present invention is defined only by the appended claims, along with the full scope of equivalents to which such claims are entitled.
The scaling of the metal oxide semiconductor field effect transistor (MOSFET) to submicron feature sizes in order to increase operational speed, decrease power consumption and increase reliability, requires a corresponding reduction in the gate dielectric thickness. Although thermally grown amorphous silicon dioxide SiO2 is currently the dielectric most often used in these applications, the thinner layers of silicon dioxide are developing reliability and performance issues. As the silicon dioxide thickness is reduced to about 2.5 nm, a large gate leakage current of up to one amp per square centimeter flows through the dielectric due to direct tunneling. Such a problem may occur in any dielectric material as the material thickness approaches tunneling thickness. To achieve the necessary large capacitance per unit area across the gate dielectric to control the electrical properties of the semiconductor material below the gate dielectric without using dielectric layers that are so thin as to potentially have large leakage currents, it is necessary to use thicker layers of dielectric materials having higher dielectric constant (k) values than silicon dioxide or silicon nitride. An additional advantage of some high-k materials is the improved diffusion barrier preventing gate electrode dopants, such as boron and phosphorous, from entering the semiconductor below the gate dielectric.
Hafnium is elemental metal number 72, and is situated on the periodic table of elements next to tantalum and right after the lanthanide metals. Hafnium is commonly used to control nuclear reactions and to scavenge gases in vacuum systems. Haffnium oxide has a formula of HfO2, a dielectric constant k of about 17, and a dielectric leakage rate of about 10−8 A/cm2 at a 1 MV/cm electric field strength. Haffnium oxide layers can be atomic layer deposited (ALD) using various precursors such as hafnium tetraiodide and oxygen at a temperature of between 400 to 700� C., or hafnium tetrachloride and steam at 300� C., or anhydrous hafnium nitrate (Hf(NO3)4) and ozone at 160� C. In an embodiment, the hafnium oxide may be grown by ALD of a hafnium-containing precursor having a formula of Hf[N(CH3)(C2H5)]4, which may be known as a homoleptic tetrakis(dialkylamino) metal(IV) compound, and water vapor at, a deposition temperature of from 200� C. to 300� C. Dielectric constant values and dielectric leakage current values do not vary significantly over the 200 to 300� C. deposition temperature range. Other known types of tetrakis(dialkylamino) metal compounds may also be used, such as tetrakis dimethlyamine, Hf[N(CH3)2]4, or tetrakis diethlyamine, Hf[N(C2H5)2]4.
Hafnium nitride has a formula of Hf3N4, and a dielectric constant k of about 30. Hafnium nitride films can be atomic layer deposited using various precursors such as the homoleptic tetrakis(dialkylamino) metal (IV) compounds discussed above, and ammonia, NH3, at 150 to 250� C. deposition temperature. In consideration of the two materials' temperature ranges, an embodiment has the deposition temperature between 200 to 250� C. The preparation of the above mentioned tetrakis(dialkylamino) metal compounds may be synthesized from hafnium chloride and the various amine salts as is known in the chemical art.
Each of the hafnium oxide and hafnium nitride films may have a very tightly controlled thickness for each deposition cycle that depends on the saturation of the substrate surface. For example, hafnium oxide layers may typically be 0.14 tun thick per deposition cycle. If repetitive layers of hafnium oxide are grown upon one another, then the single resulting film of hafnium oxide will have a thickness that is easily controlled by simply controlling the number of deposition cycles run. The surface of the ALD layer formed is also very smooth and continuous, even over sharp underlying topography. One of the useful properties of ALD in forming dielectric layers is the high level of what is known as "step coverage", even over sharp edges and in trenches having aspect ratios of depth to width of 40 to 1. In an embodiment, the hafnium oxide layer has 100% step coverage over 90 degree angle steps.
The deposition cycles may also be alternated between the two different dielectrics, and the resulting film may either be a nanolaminate of the two or more different dielectrics, or the two or more dielectrics may form an alloy with each other if the similarity between the two or more dielectrics results in miscible materials. In either case the film properties may vary depending upon the ratio of the two or more different materials, and thus materials may be formed that have engineered properties. In an embodiment, to form a dielectric layer having an overall dielectric constant k value of about 24, deposit one layer of hafnium oxide and then one layer of hafnium nitride, and repeat until the desired overall dielectric thickness is achieved. In this way a material having k of 17, such as Haffnium oxide, may be combined with a material having k of 30, such as hafnium nitride, to form a dielectric layer having the desired dielectric constant k of 24.
A composite dielectric layer of hafnium nitride and hafnium oxide may be beneficially used because the relatively high dielectric constant (high-k) of from 17 to 30 of the film (depending upon the ratio of hafnium oxide to hafnium nitride) as compared to 3.9 for silicon dioxide, and the excellent current leakage value of hafnium oxide, provides the functionality of a much thinner silicon dioxide film without the reliability loss and leakage currents consequent to using such physically thin films.
It is possible to use thicker layers of hafnium oxide and hafnium nitride to replace much thinner silicon dioxide layers without changing the electrical properties of the transistor because of the higher dielectric constant of the hafnium dielectrics. A gate dielectric in a transistor has both a physical gate dielectric thickness and an equivalent oxide thickness (teq). The equivalent oxide thickness quantifies the electrical properties, such as capacitance, of the gate dielectric in terms of a representative physical thickness. teq is defined as the thickness of a theoretical SiO2 layer that would be required to have the same capacitance density as a given dielectric, ignoring leakage current and reliability considerations.
A SiO2 layer of thickness, t, deposited on a Si surface as a gate dielectric will have a teq larger than its thickness, t. This teq results from the capacitance in the surface channel on which the SiO2 is deposited due to the formation of a depletion/inversion region. This depletion/inversion region can result in teq being from 3 to 6 Angstroms (Å) larger than the SiO2 thickness, t. Thus, with the semiconductor industry driving to someday scale the gate dielectric equivalent oxide thickness to under 10 Å, the physical thickness requirement for a SiO2 layer used for a gate dielectric would need to be approximately 4 to 7 Å.
Additional requirements on a SiO2 layer would depend on the gate electrode used in conjunction with the SiO2 gate dielectric. Using a conventional polysilicon gate would result in an additional increase in teq for the SiO2 layer. This additional thickness could be eliminated by using a metal gate electrode, though metal gates are not currently used in typical complementary metal-oxide-semiconductor field effect transistor (CMOS) technology. Thus, future devices would be designed towards a physical SiO2 gate dielectric layer of about 5 Å or less.
Silicon dioxide is used as a gate dielectric, in part, due to its electrical isolation properties in a SiO2—Si based structure. This electrical isolation is due to the relatively large band gap of SiO2 (8.9 eV), which makes it a good insulator. Significant reductions in its band gap would eliminate it as a material for use as a gate dielectric. However, as the thickness of a SiO2 layer decreases, the number of atomic layers, or monolayers of the material in the thickness decreases. At a certain thickness, the number of monolayers will be sufficiently small that the SiO2 layer will not have a complete arrangement of atoms as in a thicker or bulk layer. As a result of incomplete formation relative to a bulk structure, a thin SiO2 layer of only one or two monolayers will not form a full band gap. The lack of a full band gap in a SiO2 gate dielectric may cause an effective short between an underlying conductive silicon channel and an overlying polysilicon gate. This undesirable property sets a limit on the physical thickness to which a SiO2 layer can be scaled. The minimum thickness due to this monolayer effect is thought to be about 7-8 Å. Therefore, for future devices to have a teq less than about 10 Å, other dielectrics than SiO2 need to be considered for use as a gate dielectric.
For a typical dielectric layer used as a gate dielectric, the capacitance is determined as one for a parallel plate capacitance: C=kε0A/t, where k is the dielectric constant, ε0 is the permittivity of free space, A is the area of the capacitor, and t is the thickness of the dielectric. The thickness, t, of a material is related to its teq for a given capacitance, with SiO2 having a dielectric constant kox=3.9, as
t=(k/k ox)t eq=(k/3.9)t eq.
Thus, materials with a dielectric constant greater than that of SiO2 will have a physical thickness that can be considerably larger than a desired teq, while providing the desired equivalent oxide thickness. For example, an alternate dielectric material with a dielectric constant of 10 could have a thickness of about 25.6 Å to provide a teq of 10 Å, not including any depletion/inversion layer effects. Thus, a reduced equivalent oxide thickness for transistors can be realized by using dielectric materials with higher dielectric constants than SiO2.
The thinner equivalent oxide thickness required for lower transistor operating voltages and smaller transistor dimensions may be realized by a significant number of materials, but additional fabricating requirements makes determining a suitable replacement for SiO2 difficult. The current view for the future of the microelectronics industry still predicts silicon-based devices. This requires that the gate dielectric employed be grown on a silicon substrate or silicon layer, which places significant constraints on the substitute dielectric material. During the formation of the dielectric on the silicon layer, there exists the possibility that a small layer of SiO2 could be formed in addition to the desired dielectric. The result would effectively be a dielectric layer consisting of two sub-layers in parallel with each other and the silicon layer on which the dielectric is formed. In such a case, the resulting capacitance would be that of two dielectrics in series. As a result, the teq of the dielectric layer would be the sum of the SiO2 thickness and a multiplicative factor of the thickness, t, of the dielectric being formed, written as
t eq =t SiO
Thus, if a SiO2 layer is formed in the process, the teq is again limited by a SiO2 layer. In the event that a barrier layer is formed between the silicon layer and the desired dielectric in which the barrier layer prevents the formation of a SiO2 layer, the teq would be limited by the layer with the lowest dielectric constant. However, whether a single dielectric layer with a high dielectric constant or a barrier layer with a higher dielectric constant than SiO2 is employed, the layer directly in contact, or interfacing with the silicon layer must provide a high quality interface to maintain high channel carrier mobility.
One of the advantages of using SiO2 as a gate dielectric has been that the formation of the SiO2 layer results in an amorphous gate dielectric. Having an amorphous structure for a gate dielectric provides reduced leakage current problems associated with grain boundaries in polycrystalline gate dielectrics, which may cause high leakage paths. Additionally, grain size and orientation changes throughout a polycrystalline gate dielectric can cause variations in the film's dielectric constant, along with uniformity and surface topography problems. Typically, materials having the advantage of a high dielectric constant relative to SiO2 also have the disadvantage of a crystalline form, at least in a bulk configuration. The best candidates for replacing SiO2 as a gate dielectric are those with high dielectric constants, and which can be fabricated as a thin layer with an amorphous form.
Candidates to replace SiO2 include high-k dielectric materials. High-k materials include materials having a dielectric constant greater than silicon dioxide, for example, dielectric materials having a dielectric constant greater than about twice the dielectric constant of silicon dioxide. An appropriate high-k gate dielectric should have a large energy gap (Eg) and large energy barrier heights with the silicon substrate for both electrons and holes. Generally, the band gap is inversely related to the dielectric constant for a high-k material, which lessens some advantages of the high-k material. A set of high-k dielectric candidates for replacing silicon oxide as the dielectric material in electronic components in integrated circuit includes the lanthanide oxides such as Pr2O3, La2O3, Nd2O3, Sm2O3, Gd2O3, Dy2O3, Ce2O3, Tb2O3, Er2O3, Eu2O3, Lu2O3, Tm2O3, Ho2O3, Pm2O3, and Yb2O3. Other candidates include various lanthanide silicates, zirconium oxide ZrO2, and hafnium oxide HfO2. Such high dielectric constant layers provide a significantly thinner equivalent oxide thickness compared with a silicon oxide layer having the same physical thickness. Alternatively, such dielectric layers provide a significantly thicker physical thickness than a silicon oxide layer having the same equivalent oxide thickness. This increased physical thickness aids in reducing leakage current, in particular the leakage current caused by tunneling mechanisms.
Another consideration for selecting the material and method for forming a dielectric film for use in electronic devices and systems concerns the roughness of a dielectric film on a substrate. Surface roughness of the dielectric film has a significant effect on the electrical properties of the gate oxide, and the resulting operating characteristics of the transistor. The leakage current through a physical 1.0 nm gate dielectric may increase by a factor of 10 for every 0.1 increase in the root-mean-square (RMS) roughness of the dielectric layer.
During a conventional sputtering deposition process, particles of the material to be deposited bombard the surface at a high energy. When a particle hits the surface, some particles adhere, and other particles cause damage. High energy impacts remove body region particles, creating pits. The surface of such a deposited layer may have a rough contour due to the rough interface at the body region.
In an embodiment, a dielectric film having a substantially smooth surface relative to other processing techniques is formed using atomic layer deposition (ALD). Further, forming such a dielectric film using atomic layer deposition can provide for controlling transitions between material layers. As a result of such control, atomic layer deposited dielectric film may have an engineered transition with a substrate surface, or may be formed with many thin layers of different dielectric materials to enable selection of the dielectric constant to a value between that available from pure dielectric compounds.
ALD, which may be known as atomic layer epitaxy (ALE), is a modification of chemical vapor deposition (CVD) and may also be called "alternately pulsed-CVD." In ALD, gaseous precursors are introduced one at a time to the substrate surface mounted within a reaction chamber (or reactor). This introduction of the gaseous precursors takes the form of pulses of each gaseous precursor. In a pulse of a precursor gas, the precursor gas is made to flow into a specific area or region for a short period of time. Between the pulses, the reaction chamber is purged with a gas, which in many cases is an inert gas, and/or evacuated.
In the first reaction step of the ALD process the first precursor saturates and is chemisorbed at the substrate surface, during the first pulsing phase. Subsequent pulsing with a purging gas removes excess precursor from the reaction chamber, specifically the precursor that has not been chemisorbed.
The second pulsing phase introduces a second precursor to the substrate where the growth reaction of the desired film takes place, with a reaction thickness that depends upon the amount of the chemisorbed first precursor. Subsequent to the film growth reaction, reaction byproducts and precursor excess are purged from the reaction chamber. With a precursor chemistry where the precursors adsorb and aggressively react with each other on the substrate, one ALD cycle can be performed in less than one second in properly designed flow type reaction chambers. Typically, precursor pulse times range from about 0.5 sec to about 2 to 3 seconds.
In ALD processes, the saturation of all the reaction and purging phases makes the film growth self-limiting. This self-limiting growth results in large area uniformity and conformality, which has important applications for such cases as planar substrates, deep trenches, and in the processing of porous silicon and high surface area silica and alumina powders. Significantly, ALD provides for controlling film thickness in a straightforward manner by controlling the number of growth cycles.
ALD was originally developed to manufacture luminescent and dielectric films needed in electroluminescent displays. Significant efforts have been made to apply ALD to the growth of doped zinc sulfide and alkaline earth metal sulfide films. Additionally, ALD has been studied for the growth of different epitaxial II-V and II-VI films, nonepitaxial crystalline or amorphous oxide and nitride films, and multilayer structures of these. There has also been considerable interest in the ALD growth of silicon and germanium films, but due to the difficult precursor chemistry, this has not been very successful.
The precursors used in an ALD process may be gaseous, liquid or solid. However, liquid or solid precursors should be volatile with high vapor pressures or low sublimation temperatures. The vapor pressure should be high enough for effective mass transportation. In addition, solid and some liquid precursors may need to be heated inside the reaction chamber and introduced through heated tubes to the substrates. The necessary vapor pressure should be reached at a temperature below the substrate temperature to avoid the condensation of the precursors on the substrate. Due to the self-limiting growth mechanisms of ALD, relatively low vapor pressure solid precursors may be used, though evaporation rates may vary somewhat during the process because of changes in their surface area.
There are several other characteristics for precursors used in ALD. The precursors should be thermally stable at the substrate temperature because their decomposition would destroy the surface control and accordingly the advantages of the ALD method that relies on the reaction of the precursor at the substrate surface. A slight decomposition, if slow compared to the ALD growth, can be tolerated.
The precursors should chemisorb on, or react with the surface, though the interaction between the precursor and the surface as well as the mechanism for the adsorption is different for different precursors. The molecules at the substrate surface should react aggressively with the second precursor, which may be called a reactant, to form the desired solid film. Additionally, precursors should not react with the film to cause etching, and precursors should not dissolve in the film. The use of highly reactive precursors in ALD may contrast with the precursors for conventional metallo-organic CVD (MOCVD) type reactions.
The by-products in the reaction should be gaseous in order to allow their easy removal from the reaction chamber during a purge stage. Further, the by-products should not react or adsorb on the surface.
In a reaction sequence ALD (RS-ALD) process, the self-limiting process sequence involves sequential surface chemical reactions. RS-ALD relies on chemistry between a reactive surface and a reactive molecular precursor. In an ALD process, molecular precursors are pulsed into the ALD reaction chamber separately. The metal precursor reaction at the substrate is typically followed by an inert gas pulse (or purge) to remove excess precursor and by-products from the reaction chamber prior to an input pulse of the next precursor of the fabrication sequence.
By the use of ALD processes, films can be layered in equal metered sequences that are all identical in chemical kinetics, deposition per cycle, composition, and thickness. ALD sequences generally deposit less than a full layer of the deposited material (for example hafnium oxide) per deposition cycle. Typically, a deposition or growth rate of about 0.25 to about 2.00 Å per ALD cycle can be realized.
The advantages of ALD include continuity at an interface, avoiding poorly defined nucleating regions that are typical for thin chemical vapor deposition (<20 Å) and physical vapor deposition (<50 Å), conformality over a variety of substrate topologies due to its layer-by-layer deposition technique, use of low temperature and mildly oxidizing processes, lack of dependence on the reaction chamber, growth thickness dependent solely on the number of cycles performed, and ability to engineer multilayer laminate films with resolution of one to two monolayers. ALD processes allow for deposition control on the order of single monolayers and the ability to deposit monolayers of amorphous films.
A cycle of an ALD deposition sequence includes pulsing a precursor material, pulsing a purging gas for the precursor, pulsing a reactant precursor, and pulsing the reactant's purging gas, resulting in a very consistent deposition thickness that depends upon the amount of the first precursor that adsorbs onto, and saturates, the surface. This cycle may be repeated until the desired thickness is achieved in a single material dielectric layer, or may be alternated with pulsing a third precursor material, pulsing a purging gas for the third precursor, pulsing a fourth reactant precursor, and pulsing the fourth reactant's purging gas. In the case where the thickness of the first series of cycles results in a dielectric layer that is only a few molecular layers thick, and the second series of cycles also results in a different dielectric layer that is only a few molecular layers thick, this may be known as a nanolayer material or a nanolaminate. A nanolaminate means a composite film of ultra thin layers of two or more different materials in a layered stack, where the layers are alternating layers of the different materials having a thickness on the order of a nanometer, and may be a continuous film only a single monolayer thick of the material. The nanolayers are not limited to alternating single layers of each material, but may include having several layers of one material alternating with a single layer of the other material, to obtain a desired ratio of the two or more materials. Such an arrangement may obtain a dielectric constant that is between the values of the two or more materials singly. A nanolaminate may also include several layers of one material formed by an ALD reaction either over or under a single layer of a different material formed by another type of reaction, such as a MOCVD reaction. The layers of different materials may remain separate after deposition, or they may react with each other to form an alloy layer.
In an embodiment, a nanolaminate layer of hafnium oxide is formed on a substrate mounted in a reaction chamber using ALD. Alternatively, multiple layers may be formed in a repetitive sequence using precursor gases individually pulsed into the reaction chamber. An embodiment includes forming the hafnium oxide layers using a precursor gas such as hafnium tetrakisdimethylamine, having a chemical formula of Hf[N(CH4)2]4, and a reactant of water vapor. An embodiment includes forming the hafnium nitride layers using a hafnium tetrakisdimethylamine as above, and a reactant of ammonia. Other solid or liquid precursors may be used in an appropriately designed reaction chamber. The use of such precursors in an ALD reaction chamber may result in lower deposition temperatures in the range of 150 to 300� C., and the ability to use mildly oxidizing reactant materials such as H2O, H2O2, various alcohols, N2O, NH3, ozone or oxygen. Purge gases may include nitrogen, helium, argon or neon. Such films may survive high temperature anneals (sometimes used to reduce fixed surface state charges and improve metal to semiconductor resistance) of up to 1000� C., and have low leakage currents of less than 5�10−8 Å/cm2 at electric field strengths of one MVolt/cm.
Also included in the system are purging gas sources 114 and 118, coupled to mass-flow controllers 116 and 120, respectively. The embodiment may use only one of the purge gases for all four disclosed illustrative purging steps, or both purge gases may be used simultaneously, or alternately, as required for the particular desired result. Furthermore, additional purging gas sources can be constructed in ALD system 100, one purging gas source for each different precursor and reactant gas, for example. For a process that uses the same purging gas for multiple precursor gases, fewer purging gas sources may be required for ALD system 100. The precursor, reactant and purge gas sources are coupled by their associated mass-flow controllers to a common gas line or conduit 112, which is coupled to the gas-distribution fixture 110 inside the reaction chamber 102. Gas conduit 112 may also be coupled to another vacuum pump, or exhaust pump, not shown, to remove excess precursor gases, purging gases, and by-product gases at the end of a purging sequence from the gas conduit 112.
Vacuum pump, or exhaust pump, 104 is coupled to chamber 102 by control valve 105, which may be a mass-flow valve, to remove excess precursor gases, purging gases, and by-product gases from reaction chamber 102 at the end of a purging sequence. For convenience, control displays, mounting apparatus, temperature sensing devices, substrate maneuvering apparatus, and necessary electrical connections as are known to those skilled in the art are not shown in
The use, construction and operation of reaction chambers for deposition of films are understood by those of ordinary skill in the art of semiconductor fabrication. A variety of such commercially available reaction chambers may be used. Furthermore, one of ordinary skill in the art will comprehend the necessary detection, measurement, and control techniques in the art of semiconductor fabrication upon reading and understanding the disclosure.
The elements of ALD system 100 may be controlled by a computer. To focus on the use of ALD system 100, the computer is not shown. Those skilled in the art can appreciate that the individual elements such as pressure control, temperature control, and gas flow within ALD system 100 can be under computer control.
At 208 a first purge gas enters the reaction chamber for a predetermined length of time sufficient to remove substantially all of the non-chemisorbed first precursor material. Typical times may be 1.0-2.0 seconds with a purge gas comprising nitrogen, argon, neon, combinations thereof, or other gases such as hydrogen. At 210 a first reactant gas enters the chamber for a predetermined length of time, sufficient to provide enough of the reactant to chemically combine with the amount of chemisorbed first precursor material on the surface of the substrate. Typical reactant materials include mildly oxidizing materials, including, but not limited to, water vapor, hydrogen peroxide, nitrogen oxides, ammonia, ozone and oxygen gas, and combinations thereof. At 212 a second purge gas, which may be the same or different from the first purge gas, enters the chamber for a predetermined length of time, sufficient to remove substantially all non-reacted materials and any reaction byproducts from the chamber.
At 214 a decision is made as to whether or not the thickness of the first dielectric material in the dielectric has reached the desired thickness, or whether another deposition cycle is required. If another deposition cycle is needed, then the operation returns to 206, until the desired first dielectric layer is completed, at which time the process moves on to the deposition of the second material at 215. At 215 a second precursor material enters the reaction chamber for a predetermined length of time, typically 0.5-2.0 seconds. The second precursor material is chemically adsorbed onto the surface of the substrate, which in this case is the top surface of the first dielectric material, the amount of precursor absorbed depending upon the temperature of the substrate, and the presence of sufficient flow of the precursor material. In addition, the pulsing of the precursor may use a pulsing period that provides uniform coverage of an adsorbed monolayer on the substrate surface, or may use a pulsing period that provides partial formation of a monolayer on the substrate surface.
At 216 the first purge gas is shown as entering the chamber, but the invention is not so limited. The purge gas used in the second dielectric material deposition may be the same or different from either of the two previously noted purge gases, and
At 218 a second reactant gas, which may the same or different from the first reactant gas, enters the chamber for a predetermined length of time, sufficient to provide enough of the reactant to chemically combine with the amount of chemisorbed second precursor material on the surface of the substrate. At 220 another purge gas enters the chamber, which may be the same or different from any of the three previously discussed purge gases, for a predetermined length of time, sufficient to remove substantially all non-reacted materials and any reaction byproducts from the chamber.
At 222 a decision is made as to whether or not the thickness of the second dielectric material in the nanolaminate dielectric has reached the desired thickness, or whether another deposition cycle is required. If another deposition cycle is needed, then the operation returns to 215, until the desired second dielectric layer is completed. The desired thicknesses of the first and second dielectric materials in the dielectric may not be the same thickness, and there may be more deposition cycles for one dielectric material as compared to the other. If the second dielectric layer has reached the desired thickness, the process moves on to a decision at 224 as to whether the number of layers of the first and second dielectric materials has reached the desired number. In this illustrative embodiment, a single layer of the first dielectric having a desired thickness, and a single layer of the second dielectric having a desired thickness, have been completed at this point in the process. If more than a single layer of each dielectric material is desired, the process moves back to another deposition of the first dielectric material at 206. After the number of interleaved layers of dielectrics one and two has reached the desired value, the deposition ends at 226. Because the dielectric values of the ALD oxides in the described embodiment are high, for example hafnium oxide may have a dielectric constant of 17 and hafnium nitride may have a dielectric constant of 30, and because the highly controlled layer thickness may be a single monolayer for each one of the interleaved dielectric layers, the physical thickness needed to obtain the equivalent dielectric properties of a very thin silicon dioxide layer may have from two to ten layers of each of the two described dielectric materials.
The embodiments described herein provide a process for growing a dielectric film having a wide range of useful equivalent oxide thicknesses, teq, associated with a dielectric constant in the range from about 17 to about 30. For an acceptable equivalent silicon dioxide thickness, an embodiment for a hafnium nitride and hafnium oxide may have a physical thickness that is more than four times larger than the equivalent silicon dioxide thickness, providing enhanced probability for reducing leakage current, especially due to tunneling mechanisms. Additionally, the novel process can be implemented to form transistors, capacitors, memory devices, and other electronic systems including information handling devices. The present subject matter is not limited to two dielectric materials, and the equipment described in
The dielectric covering the area on the substrate 302 between the source and drain diffused regions 304 and 306 may be deposited by ALD in this illustrative embodiment, and may comprise one or more hafnium oxide layers 310 and 314, each potentially formed of many individual hafnium oxide layers, in an illustrative example, nine layers. There are also shown interleaved hafnium nitride layers 308, 312 and 316. Alternatively, there may be other combinations of interleaved and non-interleaved layers of varying thickness and deposition method. This nanolaminate dielectric layer is referred to as the gate oxide, and while shown as distinct and individual layers for clarity, may also be a single alloyed layer. There may be a diffusion barrier layer inserted between the first dielectric layer 308 and the substrate 302 to prevent metal contamination from affecting the electrical properties of the device. The illustrative embodiment shows the hafnium oxide layers 310 and 314 having the same thickness; however, the desired dielectric properties of the overall dielectric film may be best achieved by adjusting the ratio of the thickness of the two dielectric layers to different values. The lowest dielectric in this illustrative example is a hafnium nitride layer, but the embodiments are not so limited, and hafnium oxide may be made the lowest layer. The transistor 300 has a conductive material forming a gate 318 in this illustrative embodiment, but the dielectric may also be used in a floating gate device such as an EEPROM transistor, as either one or both of the floating gate and the control gate oxide layers. The conductive material may be polysilicon or various metals.
In an illustrative embodiment, the gate dielectric (layers 308-316) includes a tunnel gate insulator and a floating gate dielectric in a flash memory device. Use of dielectric layers containing an atomic layer deposited dielectric layer for a gate dielectric and/or floating gate dielectric in which the dielectric layer contacts a conductive layer is not limited to silicon based substrates, but may be used with a variety of semiconductor substrates.
The embodiments of methods for forming dielectric layers containing an ALD deposited dielectric layer contacting a conductive layer may also be applied to forming capacitors in various integrated circuits, memory devices, and electronic systems. In an embodiment including a capacitor 400 illustrated in
System 600 may include, but is not limited to, information handling devices, telecommunication systems, and computers. Peripheral devices 610 may include displays, additional storage memory, or other control devices that may operate in conjunction with controller 602 and/or memory 606. It will be understood that embodiments are equally applicable to any size and type of memory circuit and are not intended to be limited to a particular type of memory device. Memory types include a DRAM, SRAM (Static Random Access Memory) or Flash memories. Additionally, the DRAM could be a synchronous DRAM commonly referred to as SGRAM (Synchronous Graphics Random Access Memory), SDRAM (Synchronous Dynamic Random Access Memory), SDRAM II, and DDR SDRAM (Double Data Rate SDRAM), as well as and other emerging DRAM technologies.
Formation of hafnium oxide layers by ALD deposition may be realized using a homoleptic tetrakisdialkylamine metal(IV) precursor chemical, and an oxidizing reactant, such as water vapor. Hafnium nitride layers by ALD deposition may be realized by using a homoleptic tetrakisdialkylamine metal (IV) precursor chemical, and a reactant such as ammonia. Further, such dielectric films may be formed by ALD reactions processed at relatively low temperatures, such as 250� C., may be amorphous and possess smooth surfaces. Such ALD dielectric films may provide enhanced electrical properties as compared to physical deposition methods, such as sputtering or typical chemical layer depositions, due to their smoother surface, and reduced damage, resulting in reduced leakage current. Additionally, such dielectric layers provide a significantly thicker physical thickness than a silicon oxide layer having the same electrical equivalent oxide thickness, where the increased thickness may also reduce leakage current issues. These properties of ALD deposited dielectric layers allow for application as dielectric layers in electronic devices and systems.
Dielectric layers formed from hafnium nitride and hafnium oxide have beneficial properties for gate dielectrics and capacitor dielectric materials including thermal stability, high dielectric constant and low leakage currents. The conductive layers contacting the dielectric may include metals, semiconductor materials, polycrystalline semiconductor materials and doped materials of either conductivity type.
Capacitors, transistors, higher level ICs or devices including memory devices, and electronic systems are constructed utilizing the novel process for forming a dielectric film having an ultra thin equivalent oxide thickness, teq. Gate dielectric layers or films containing atomic layer deposited hafnium oxide are formed having a dielectric constant (k) substantially higher than that of silicon oxide, such that these dielectric films possess an equivalent thickness, teq , thinner than SiO2 gate dielectrics of the same physical thickness. Alternatively, the high dielectric constant relative to silicon dioxide allows the use of much larger physical thickness of these high-k dielectric materials for the same teq of SiO2. Films having the relatively larger physical thickness aids in processing gate dielectrics and other dielectric layers in electronic devices and systems, and improves the electrical properties of the dielectrics.
Although specific embodiments have been illustrated and described herein, it will be appreciated by those of ordinary skill in the art that any arrangement that is calculated to achieve the same purpose may be substituted for the specific embodiments shown. It is to be understood that the above description is intended to be illustrative, and not restrictive, and that the phraseology or terminology employed herein is for the purpose of description and not of limitation. Combinations of the above embodiments and other embodiments will be apparent to those of skill in the art upon studying the above description. The scope of the embodiments of the present invention should be determined with reference to the appended claims, along with the full scope of equivalents to which such claims are entitled.
|Citing Patent
|Filing date
|Publication date
|Jun 29, 2005
|Oct 7, 2008
|Amberwave Systems Corp.
|Methods for forming dielectrics and metal electrodes
|Apr 27, 2006
|Dec 16, 2008
|Panasonic Corporation
|Semiconductor device and method for fabricating the same
|Jun 30, 2007
|Dec 15, 2009
|Intel Corporation
|Hybrid high-k gate dielectric film
|Apr 28, 2005
|Feb 16, 2010
|Micron Technology, Inc.
|Atomic layer deposition of a ruthenium layer to a lanthanide oxide dielectric layer
|Jan 5, 2007
|Mar 2, 2010
|Micron Technology, Inc.
|Methods for atomic-layer deposition
|Mar 29, 2005
|Mar 30, 2010
|Micron Technology, Inc.
|Atomic layer deposited titanium silicon oxide films
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|Conductive layers for hafnium silicon oxynitride films
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|May 18, 2010
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|Ruthenium layer for a dielectric layer containing a lanthanide oxide
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|Zirconium-doped tantalum oxide films
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|Jun 1, 2010
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|Deposition of ZrA1ON films
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|Micron Technology, Inc.
|Method of forming an apparatus having a dielectric containing cerium oxide and aluminum oxide
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|Jul 20, 2010
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|Tantalum aluminum oxynitride high-κ dielectric
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|Aug 3, 2010
|Tokyo Electron Limited
|Nitrogen profile engineering in nitrided high dielectric constant films
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|Aug 10, 2010
|Tokyo Electron Limited
|Semiconductor device containing a buried threshold voltage adjustment layer and method of forming
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|Zirconium-doped tantalum oxide films
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|Oct 19, 2010
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|Jan 11, 2011
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|Method of fabricating an apparatus having a lanthanum-metal oxide dielectric layer
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|Mar 29, 2011
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|Dielectric stack containing lanthanum and hafnium
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|Apr 12, 2011
|Micron Technology, Inc.
|Methods of forming electronic devices containing Zr-Sn-Ti-O films
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|Apr 19, 2011
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|Devices with nanocrystals and methods of formation
|Jun 27, 2008
|Jul 5, 2011
|Applied Materials, Inc.
|Pretreatment processes within a batch ALD reactor
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|Sep 6, 2011
|Tokyo Electron Limited
|Method of forming mixed rare earth nitride and aluminum nitride films by atomic layer deposition
|Sep 30, 2009
|Dec 13, 2011
|Tokyo Electron Limited
|Methods for multi-step copper plating on a continuous ruthenium film in recessed features
|Mar 31, 2006
|Jan 17, 2012
|Tokyo Electron Limited
|Method of forming mixed rare earth oxynitride and aluminum oxynitride films by atomic layer deposition
|Feb 7, 2012
|Micron Technology, Inc.
|Graded dielectric layers
|Jun 25, 2010
|Dec 18, 2012
|Tokyo Electron Limited
|Semiconductor device containing a buried threshold voltage adjustment layer and method of forming
|Aug 23, 2011
|May 14, 2013
|Tokyo Electron Limited
|Diffused cap layers for modifying high-k gate dielectrics and interface layers
|Feb 1, 2012
|Jan 21, 2014
|Tokyo Electron Limited
|Method of forming thin metal and semi-metal layers by thermal remote oxygen scavenging
|Nov 28, 2011
|Jul 22, 2014
|Micron Technology, Inc.
|Conductive layers for hafnium silicon oxynitride
|Mar 30, 2012
|Oct 21, 2014
|Tokyo Electron Limited
|Method of integrating buried threshold voltage adjustment layers for CMOS processing
|Oct 19, 2012
|Oct 21, 2014
|Tokyo Electron Limited
|Hybrid gate last integration scheme for multi-layer high-k gate stacks
|Feb 3, 2012
|Feb 10, 2015
|Micron Technology, Inc.
|Graded dielectric structures
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|Jun 23, 2015
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|U.S. Classification
|International Classification
|Cooperative Classification
|European Classification
|Feb 23, 2005
Owner name: MICRON TECHNOLOGY, INC., IDAHO
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:AHN, KIE Y.;FORBES, LEONARD;REEL/FRAME:016338/0202;SIGNING DATES FROM 20050209 TO 20050211
|May 5, 2009
|Certificate of correction
|Aug 8, 2012
|Fee payment
Year of fee payment: 4


text:
Spotlight on Technology
From automobiles and motorcycles to power equipment and outboard engines, the Honda name is synonymous with a proud legacy of technological innovation and leadership. Honda introduced its first four-stroke outboard motor, the GB30, in 1964. Today, the company remains committed to the development of lightweight, fuel-efficient, four-stroke outboards.
As the world's largest engine manufacturer, Honda sold more than 27 million units globally across all product lines in 2010. This high production volume, coupled with the company's commitment to precision manufacturing techniques, has allowed Honda to remain a leader in four-stroke engine technology.
Honda continually improves its marine engine line by incorporating technologies from its highly advanced automotive and racing heritage. In order to maximize power output and durability, many Honda Marine outboards include exclusive technological features found in the company's most popular automobile engines, including the Honda Accord, Fit, Pilot, Ridgeline, Odyssey, CR-V, and Civic. Engineers work to ensure that every Honda outboard model – ranging from 2 to 250 horsepower – sets the standard for fuel efficiency and ease of operation while staying true to the core Honda attributes of durability, quality, reliability and quiet operation.
The unparalleled performance, power, and reliability of Honda Marine's four-stroke outboard engine lineup is attributed to a number of exclusive technological features such as Honda's Variable Valve Timing and Lift Electronic Control (VTEC®). First debuting in the high-performance Acura NSX sports car, VTEC® technology has since been integrated into the designs of the Honda Marine BF225, BF150 and BF90 engines, providing these flagship models a unique blend of power, torque, and efficiency at any speed.
VTEC® works to vary the lift and duration of the intake valve opening to deliver optimal performance at both low and high rpm, resulting in peak performance at all speeds. The technology provides a broad, flat torque curve and smooth power delivery throughout the engine's entire operating range, allowing the operator to enjoy both outstanding performance and impressive fuel economy.
Boosted Low Speed Torque (BLAST™), Dual-Stage Induction, Lean Burn Control, 3-Way Cooling, and a 4-Front Corrosion Protection System are just a few of the innovative design components that combine to deliver on Honda Marine's promise of outstanding performance, fuel efficiency, and reliability.
Honda Marine also offers an industry-best, 5-year, non-declining factory warranty. The program offers true Honda factory backing in comparison to outsourced, extended service contracts often offered by other manufacturers. Standard on all Honda engines purchased for recreational use, coverage for the True 5 warranty is the same on the last day as it is on the first.
Honda Marine is proud to lead the industry and set the standard for excellence with new innovations, products and design enhancements. As a eight-time recipient of the National Marine Manufacturers Association (NMMA) Customer Satisfaction Index (CSI) Award (2004-2011), and four-time recipient of the J.D. Power & Associates award for customer satisfaction with four-stroke outboard engines (2005-2007, 2009), Honda sets the industry standard for customer satisfaction.
Environmental Responsibility
Honda Marine believes that ultra-low emission levels are essential to the protection of global waterways. In fact, Honda Marine's full line of current production models meets rigorous California Air Resources Board (CARB) 3-Star standards, ensuring their availability and regulatory compliance in all 50 states. Additionally, Honda's full line of four-stroke outboards meet current emissions standards put forth by the Environmental Protection Agency (EPA).
Honda uses its expertise as the world's largest engine manufacturer to perfect clean, quiet, and economical four-stroke engines. While two-stroke engines rely on gas or air to carry a thin film of oil to critical components, Honda four-stroke engines bathe internal components in oil under constant pressure. Ports in two-stroke cylinders and pistons accelerate piston and ring wear, but because there are no intake and exhaust ports in four-stroke cylinders or pistons, they can run with tighter tolerances for longer life.
By extension, cooler-running Honda outboard engines may last longer and require less maintenance and service than two-stroke engines.
Environmental Sponsorships
Honda Marine is a proud and dedicated partner to environmental organizations whose members work and volunteer to protect our planet's natural resources:
Living Lands & Waters Foundation, East Moline, Illinois
Living Lands aids in the protection, preservation and restoration of the natural environment of the nation's major rivers and their watersheds.
Catalina Seabass Fund, Avalon, California
Catalina Seabass supports research, grow-out and release of California White Seabass in conjunction with the California Department of Fish and Game.
Upper Chattahoochee Riverkeeper, Atlanta, Georgia
The Riverkeeper's mission is to advocate and secure the protection and stewardship of the Chattahoochee River, its tributaries, and watershed in order to maintain its environmental integrity and to preserve the natural, scenic, and recreational character of the river corridor.
Mote Marine Laboratories
Mote Marine Laboratories is one of the world's few remaining private marine research laboratories. Its mission is to advance the understanding of sea science to the general public while conducting vital marine science research. More information about these and other environmental affiliations can be accessed at www.honda-marine.com.
The Honda Environment Statement
As a responsible member of society determined to help preserve the global environment, Honda makes concerted efforts to contribute to human health and preservation of the global environment in each phase of its corporate activities and to staying at the forefront of such endeavors.
About Honda Marine
For more than forty years, Honda Marine has set new benchmarks for fuel efficiency, quiet operation, and low emissions with its four-stroke engines. Honda's outboards share the same unparalleled durability, quality, and reliability of its legendary automobiles. With models ranging from 2 to 250 horsepower, Honda Marine's full line of current production models meets rigorous California Air Resources Board (CARB) 3-Star standards, ensuring their availability and regulatory compliance in all 50 states.
Editor's Note:
Honda Marine, a division of American Honda Motor Co., Inc., markets a complete range of outboard marine engines. Its comprehensive product line is powered exclusively by four-stroke engines.
Information for media regarding Honda Marine products is available at www.hondanews.com.
Consumer information, including model overviews and updates, video clips, and complete specifications regarding Honda products, is available at www.honda.com.
For product inquiries and dealer locations, please visit www.hondamarine.com.
Connect with Honda Marine on Facebook by visiting http://facebook.com/hondamarine.Updated October 2011

subset: commoncrawl


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The Crutch
Providing the crutch for non-believers to lean on is a well-intentioned strategic error that has no benefit and likely does much harm. However, I am even more concerned about something else related to our construction of these crutches.
The Resource Finder has powerful filtering features — check out the tutorial to learn more.
Providing the crutch for non-believers to lean on is a well-intentioned strategic error that has no benefit and likely does much harm. However, I am even more concerned about something else related to our construction of these crutches.
During his seminary education, Dr. Murphy also gained a deeper understanding of Luther's theology of the cross, and he realized that it's really the best way to approach the science and theology dialogue.
The BioLogos Foundation explains to the findings of the Encyclopedia of DNA Elements (ENCODE) project and responds to the claims that its discoveries challenge the theory of evolution, especially regarding so-called "junk DNA".
Many Christians believe that they face a painful choice-- either life was designed by God or it is an evolutionary product of natural selection. Charles Darwin himself believed in this dichotomy, and people ever since have felt the need to "choose sides". However, looking back at history, we find that one of Darwin's chief scientific colleagues, Asa Gray, did not share this perspective. In this three-part essay, part 1 charts the relationship of Asa Gray and Charles Darwin. Part 2 describes Darwin's struggle with the problem of natural evil and design in nature, and part 3 explores how Asa Gray was able to embrace evolution without rejecting the idea of design.
Our desire to engage in gracious dialogue with fellow believers who reject biological evolution has been receiving increased attention in both the Christian and secular press. More importantly, we are being joined in this reconciling project by our brothers and sisters in Christ who have often been defined primarily as our "opponents".
Last week, Tennessee legislators approved a bill on science education (the Teacher Protection Academic Freedom Act) that has stoked controversy around the country.
The six-part series by Dr. Keller considers three main clusters of questions lay people raise with their pastors when introduced to the teaching that biological evolution and biblical orthodoxy can be compatible. As a pastor and evangelist, Keller takes these concerns seriously and offers suggestions for addressing them without requiring believers to adopt a particular view or accept a definitive answer.
Now that we have covered significant ground with respect to what various classes of pseudogenes are and how they arise, we are now able to properly evaluate antievolutionary arguments put forward in an attempt to discredit these lines of evidence for evolution.
It is easy to be confused about what science is and what scientists do. In part, this is because scientists do so many different things in so many different ways.
In this series, Dennis Venema describes his personal journey that took him away from the Intelligent Design arguments toward the evolutionary creation worldview. Through careful and honest research, he discovered ID scientific reasoning to be analogy-based, in sharp contrast to evolutionary science, which was supported by concrete data. After accepting this view, God's presence ever strengthened him as he explored the compatibility between the Bible and God's creative mechanism.
Media-hungry atheist, creationist and religious fundamentalist provocateurs have dominated the science and religion narrative for the past decade. A recently published large-scale survey of college students, however, finds that the call to arms has fallen on deaf ears.
In this series, Oliver R. Barclay examines the idea of God as Designer. He concludes that God did indeed design creation, and that the "state of the world is evidence not only for the existence and power of God but for his kindness and care for his creation." Barclay then goes on to investigate the arguments for Intelligent Design which attempt to prove that certain examples of design necessarily imply direct intervention by a Great Designer. He points the flaws of such an argument and discusses its implications.
In this six part series, Karl Giberson discusses evolution with BioLogos founder Francis Collins as it relates to the scientific community and the church. Their conversation addresses Collins' scientific perspectives, his Christian faith, and the abundant evidence for evolution. Throughout, the two critique various unscientific approaches to evolution such as Young Earth Creationism and Intelligent Design. Overall, they both express the deep need for the Church in America to accept evolution as a valuable, true theory as well as to cultivate a richer understanding of the Bible among the people.
In this series, Ard Louis addresses concerns that Christians may have about the BioLogos view that stem from specific misconceptions. Among these are misunderstandings about the nature of science, God's action in the universe, and natural theology. In addition, there is unwarranted mistrust towards the academic world. Finally, he encourages the BioLogos team to carefully confront "the ways we in the church have all been shaped by the spirit of the age" and to patiently listen and speak about these issues.
Polkinghorne discusses the origins and aims of natural theology in this series. It does not offer truth, but rather a "best explanation" for the world, answering primarily meta-questions. Two such questions asked by Polkinghorne are, "Why is science possible at all?" and "What makes the universe so special?" To explore the answers, he looks at the ability of human minds to penetrate mysteries of the natural world as well as the fine-tuning of the universe necessary to produce the fruitfulness of life.
It has become an article of faith for those espousing both the young earth creation model and many who hold to the intelligent design model that transitional fossils do not exist and therefore evolution has not taken place.
Many evolutionary critics have identified the Cambrian Explosion as a stumbling block to the theory of evolution, arguing that the "expected transitions between major invertebrate phyla are absent, and that the suddenness of their appearance in the fossil record demonstrates that evolutionary explanations are not viable." Keith Miller argues that the Cambrian Explosion is not so problematic as these opponents claim after all.
In this video Conversation, N.T. Wright responds to a question from a BioLogos Forum reader who notes that in the world of evangelical Christianity there seems to be a great suspicion about becoming too politically liberal, but few worries about becoming too conservative.
In this video Conversation, Joel Hunter acknowledges the risk that pastors take when preaching on Genesis—and in particular, when they approach it with an attitude of humility, allowing the possibility that the text was not meant to be understood in literal terms.
But like a church bell on a clear winter night, it is in the crisp darkness of doubt that God's voice carries farther and more clearly. St. John's great insight is that this dark night is a special sign of God's presence, where our false sense of comfort is being stripped away and we are left naked before God and asked simply to trust.


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- Independent
- The Enterprise
- The Recorder
A Mechanicsville woman who lost her job as a school bus driver last December, after police charged her with attempting to drive while impaired by alcohol while transporting a minor, pleaded guilty Wednesday and was released to await her penalty.
Ethel Quade Ressler, now 69, was arrested on the afternoon of Dec. 13 after law officers were called to Leonardtown High School, found her in a parked school bus with its motor running, and "detected a strong odor of an alcoholic beverage," St. Mary's Assistant State's Attorney Jaymi Sterling said at Ressler's plea hearing.
"She did admit to having a glass and a half of wine at lunch," the prosecutor said.
A breath test at the sheriff's office was inconclusive, the prosecutor said, but when Ressler was taken to MedStar St. Mary's Hospital on an emergency petition, a blood sample was taken and revealed she had a blood-alcohol level of 0.19 percent.
The St. Mary's sheriff's office reported after the incident that the public school system's transportation department received a complaint that day that the bus, carrying no students at that time, was being driven in a reckless manner, before it was found parked at the school in Leonardtown with about 12 students getting on board. After Ressler was taken into custody, another driver and bus were called in to transport the students home.
Daniel Slade, Ressler's lawyer, said in court Wednesday that his client's plea will cost her the commercial driver's license she holds, and that she faces the possibility of a six-month jail sentence, $1,000 fine and suspension of her regular drivers license.
"She was revoked by the county to drive a school bus" after she was charged, Slade said, and she has been attending counseling and trying to stabilize a severe respiratory infection before she can be admitted to a 28-day inpatient rehabilitation program.
St. Mary's District Judge Christy Holt Chesser ordered that Ressler be under the supervision of the state division of parole and probation, and continue participation in an alcohol counseling program, until her sentencing hearing in July.
School officials said Wednesday that Ressler is still a paid contractor with the school system, but that she no longer drives any of her buses.


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Doris V. Mitchell, 81, of Ridgway, passed away Saturday, Nov. 26, 2011 at Pinecrest Manor Nursing Home.
She was born Feb. 27, 1930, in DuBois, the daughter of Harry and Ellen Pendleton Cook. She married Paul A. Mitchell on June 25, 1949, they were married 62 years.
Jerome T. "Jump" Hasselman, 77, of 122 Laurel Lane, Kersey, died Saturday, Nov. 19, 2011 at his residence.
He was born Dec. 29, 1933, in St. Marys, son of the late George and Anna Woelfel Hasselman.
On June 2, 1956, in the St. Mark Church in Emporium, he married Mary C. Brennan, who survives.
He was a lifelong resident of the area and was a graduate of Central Catholic High School, Class of 1951. He was the owner of the former Weigh Scale Bar in St. Marys and the Wayside Inn in Kersey and retired as an insurance inspector for MIB of Harrisburg.
Jane E. Price, 96, of DuBois, passed away Thursday, Nov. 24, 2011 at the Christ the King Manor.
Born on Feb. 28, 1915 in Ridgway, she was the daughter of the late Roy B. Ely and Jane (May) Ely. She was married to Thomas F. Price; he preceded her in death on Nov. 16, 1983.
She was a member of the St. Catherine of Siena Church, the Rosary-Altar Society, Christ the King Auxiliary, the DuBois Regional Medical Center Auxiliary, the Elk County Historical Society and the Legion Auxiliary.
Jane is survived by a sister, Elizabeth E. Verbeck of Ridgway and several nieces and nephews.
Raymond S. "Sparkey" Yale, 83, of Daniel Street Brockport, died November 23, 2011 at his residence.
He was born January 11, 1928 in Brockport, son of the late Eli and Bernice Sidelinger Yale. He was married on February 3, 1951 to Erma Zuccolotto. She survives.
Shirley Mae Bush, 84, previously of Ridgway and Sun City, Ariz., died Nov. 19, 2011, in Conneautville, Pa.
She was born April 28, 1927 in Kane, a daughter of the late George R. Anderson and Carrie Hathaway Anderson. She married William A. Bush, who preceded her in death.
Michael W. Manno Jr., 86, of 325 Willow Street, Johnsonburg, died Monday evening, Nov. 21 at the Elk Regional Health Center following a brief illness.
He was born Sept. 4, 1925 in Johnsonburg, son of the late Michael W. and Margaret Knopic Manno. He married the former Sophie A. Czekai in December of 1957 in St. Joseph Church, Mt. Jewett. She preceded him in death on March 15, 2010.
Martha Blessel Wonderly Brendlinger, 86, of 764 Shelvey Summit Rd., Kersey, died Monday morning, Nov. 21, 2011 at her residence following a lengthy illness.
She was born April 22, 1925 in St. Marys, daughter of the late Albert and Appalonia (Portzer) Blessel.
She married John W. Wonderly, who preceded her in death on April 13, 1970. She then married John L. Brendlinger on Nov. 17, 1979, who survives.
Gerald C. "Gerry" Luchini, 58, of Old Byrnedale Rd., Weedville, died Monday, Nov. 21, 2011 at the Altoona Regional Health Center, as a result of injuries sustained in an October 31 trucking accident.
He was born June 12, 1953 in Kersey, son of Helen M. (Fry) Luchini and the late Francis Luchini.
He married Joan A. (Smith) on Aug. 23, 1975, and she survives.
Kenneth E. Reinard, 81, of SR 948, Highland, died late Sunday, Nov. 20, 2011 at the Kane Lutheran Home after a lengthy illness.
He was born March 14, 1930 in Kane, son of the late Walter and Mary Leona (Reisinger) Reinard.
In 1969, he married Dorothy Ann Schneider, who survives.
Richard L. Polesky, 81, 797 Dill Hill Rd., Johnsonburg, died early Thursday morning, Nov. 17, 2011, at UPMC Hamot Medical Center in Erie following a lengthy illness.
He was born on Nov. 25, 1929 in Elizabeth, N.J., son of Michael and Rose Fragale Poleski.
On Aug. 20, 1955 in Holy Rosary Church in Johnsonburg he married Norma R. Shannon and she preceded him in death on Sept. 2, 2005.
Formerly of New Jersey, he resided in Johnsonburg since 1973.


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The Blackout is a post-hardcore band from Merthyr Tydfil, Wales, formed in 2003. After some time backing Lostprophets on their Liberation Transmission Tour, along with Dopamine, Covergirl, Kids In Glass Houses, The Guns and Men, Women and Children, they released their first mini-album The Blackout! The Blackout! The Blackout!. In October 2007 the band released their debut album, We Are the Dynamite!. Their second record, The Best In Town was released on 25 May 2009 in Europe and 23 June 2009 in the US, both via Epitaph Records. The band recently finished recording their third album - titled Hope, which was released on 4 April 2011.
This area is intended for discussion only. If you have a question about your order, or require customer service you can get in touch via our Customer Service Area. Comments enquiring about existing orders, including personal details, or with questions will be deleted.


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For those who understand the benefits of yoga and meditation! This beautiful poster features a woman settled into the lotus position on a rock, in the middle of a mountain stream, enjoying the calm and loving of nature's embrace. A spectacular motivational poster, perfect for the wall of home or gym!
Product Specifications:


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Proliant 8500 P3-700-2MB 4- 2048MBHewlett-Packard Part# 159378-001
Overview:Designed for maximum in-chassis flexibility that ensures lasting value and future growth Compaq ProLiant offers a full line of servers maximized for internal system expansion. Ideal for remote and branch office environments these servers offer headroom and scalability to easily accommodate new demands and growing environments. Today's mission-critical applications demand ever-increasing scalability and availability from data center servers. The new ProLiant 8500 the latest addition to Compaq's ultra-density data server product line delivers the performance and uptime required to meet the current and future demands of Enterprise server consolidation e-business ERP thin-client and data mining applications. Based on the Profusion architecture jointly developed by Compaq Corollary and Intel the ProLiant 8500 offers excellent scalability driven by its balanced system architecture.
Part Number159378-001
Products ID15057
Chassis Style:Rack Mountable
Included Network Card:Ethernet (10/100 Mbps)
Number of Externally Accessible 5.25 Bay1
CD-ROM Read Speed:24 X
Drive Controllers:Wide Ultra2 SCSI
Included Drives:3.5" 1.44MB Floppy Drive, CD-ROM
Bus Speed:100 MHz
Cache Size:2 MB
Installed Memory:2 GB
Installed Video Memory:2 MB
Memory Technology:SDRAM
Number of PCI Slots:11
Maximum Number of Processors:8
Processor Class:Intel Pentium III Xeon Processor
Processor Speed:700 MHz
System Chipset:Intel Profusion
Dimensions (HxWxD)17.5 in x 17.5 in x 27 in
Weight110 lbs


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The Hoosiers are an English pop/rock band, consisting of members Irwin Sparkes (lead vocals, lead guitar), Martin Skarendahl (bass guitar, rhythm guitar) and Alan Sharland (drums, percussion). Their first single "Worried About Ray" reached #5 on the UK Singles Chart in July 2007. In October 2007, they released their debut album The Trick to Life, which reached number 1 in the album charts. The band have recently released their second top ten album The Illusion of Safety which was released on 16 August 2010 and was preceded by the lead single "Choices" which was released on 1 August 2010.
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Michael Perry designed his Scaffold Cafe Stool to develop character over time. The industrially inspired seat is crafted with salvaged teak from fishing vessels in Indonesia and sits atop a metal base. It's finished with riveted studs and a footrest for kicking your heels back. Each one is painted with acrylic and an epoxy undercoat and is intended to show wear with everyday use—forming personality with patina.
Paint is intended to chip and show signs of use. Seat height 17.75".
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Statements posted here are those of our readers and do not represent the BaseballThinkFactory. Names are provided by the poster and are not verified. We ask that posters follow our submission policy. Please report any inappropriate comments.1. Fernigal McGunnigle has become a merry hat posted on August 01, 2012 at 07:32 PM #
But the Marlins, according to one club that spoke with them, actually wanted as much as $2.5 million in a trade for Lee — even though they basically weren't paying him anything.
I swear, if Jeffrey Loria took his mother to an expensive Mother's Day brunch, he'd make her pay for it.
Was Loria not the owner of the Marlins in the off-season? Didn't they invest in 3 high-priced free agents, about 7 months ago,all of whom are still on the team?
Bell is only still on the team because no one would take him.
I swear, if Jeffrey Loria took his mother to an expensive Mother's Day brunch, he'd make the taxpayers pay for it.
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A Panoramic View in San Francisco, California
The Rob Arra Collection
Step inside historic Candlestick Park, with the eyes of the nation on the Niners, and the boys in red dominating once again - it doesn't get any better than this! This fantastic poster takes you to the thrilling 2012 season, and one of the three nationally-televised night games scheduled to showcase the resurgent NFC powerhouse. From a perfect 50-yard-line perspective, you'll feel like you're part of that joyful red-clad crowd of 69,000 as the hometown squad attempts another score. Like all
prints in photographer Rob Arra's Everlasting Images series, every
single detail is in perfect focus - the players and coaches on the sidelines,
the spectators, the scoreboards and video screen, the unique architecture, and, of course, the action
on the field. An absolute beauty, this
print deserves a nice frame and a prominent place on the wall of any die-hard
football fan! Simply breathtaking, and a rare piece you likely won't find ANYWHERE else.
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Practice Philosophy
Dr. Douglas A. Roth is a highly skilled and talented plastic surgeon specializing in cosmetic surgery of the face and body. He provides high quality cosmetic and reconstructive surgery results combined with individualized and compassionate patient care. He is well known for advanced techniques of blepharoplasty and facelifts for facial rejuvenation as well as painless and minimal bruising Botox and dermal filler injections. Dr. Roth is frequently requested to treat physicians and their family members in addition to patients from across the tri-state area. Dr. Roth is the Chief of Plastic and Reconstructive Surgery at Northern Westchester Hospital in Northern Westchester. Dr. Roth is also the Director of Plastic Surgery of the Mount Sinai Health System at the Mount Kisco Medical Group. His practice offers laser assisted Smart-Liposuction and fat grafting for advanced body contouring procedures. He is a graduate of MIT and NYU School of Medicine. Dr. Roth did his Plastic Surgery residency training at the world-renowned Institute of Reconstructive Plastic Surgery at New York University Medical Center and his Aesthetic Plastic Surgery training at the Manhattan Eye, Ear and Throat Hospital in New York. He was included in New York Magazine's Best Doctors for 2015 and Westchester Magazine's Top Doctors issues for 2007-2014. He was also selected by Castle Connolly for the Top Doctors in the New York Metro Area in 2008 through 2015. Dr. Roth has authored many original research papers in the fields of growth factors, craniofacial reconstruction and cheek reconstruction. In 1999, he brought this high level of plastic surgery practice to his patients and the entire community in Northern Westchester as the first plastic surgeon in MKMG.
Dr. Douglas Roth is a double board certified award winning plastic surgeon in practice for over sixteen years in the prestigious Mount Kisco Medical Group; a large multi-specialty group practice in Westchester, Putnam and Dutchess counties with over four hundred physicians. Patients routinely travel from all areas of New York, New Jersey and Connecticut to have their plastic surgery procedures performed by Dr. Roth. Our patients are very satisfied with their results and overall experience; they frequently return with their friends and family for additional procedures.
Dr. Roth specializes in cosmetic plastic surgery procedures of the eyes, face, breasts and body including non-invasive minimally painful injectable Botox and Dermal filler procedures. He is an expert in short recovery blepharoplasty, breast augmentation, short scar facelifts and short scar breast reductions. He also has extensive expertise with breast reconstruction after breast cancer and with reconstructing skin cancer and Mohs surgery defects of the face.
Your cosmetic surgery consultation with Dr. Douglas Roth will be very pleasant and informative. The office suite is over ten thousand square feet and is brand new. You will be met by his well trained and professional staff in a very timely fashion. Dr. Roth will spend all the necessary time analyzing your specific cosmetic concerns and surgical goals. He will answer all your questions and explain the procedures that are appropriate for you to achieve your goals. Dr. Roth emphasizes practical and safe cosmetic surgery procedures that give a natural looking result.
Dr. Roth operates in two fully accredited surgical facilities near his office in Mount Kisco. We also have a fully AAAASF certified operating room in the main office location for increased patient convenience and privacy. Patients who require an over-night stay after surgery are scheduled at Northern Westchester Hospital at 400 East Main Street, Mount Kisco. Patients who will be going home the same day of surgery are scheduled in the office surgical suite or at the Ambulatory Surgery Center of Westchester located at 34 South Bedford Road, Mt. Kisco. All three locations have highly trained Board Certified Anesthesiologists, outstanding nursing care, and specialize in caring for plastic surgery patients.
Location & Office Hours
Plastic Surgery Department
110 South Bedford Road
Mount Kisco, NY 10549
View Map
Payment Options
Medicare, Credit Cards, HMO/PPO/Other Insurance


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Ionic Dual-Voltage Travel Hair Dryer
A powerful, portable dryer that releases negative ions for beautiful-looking hair.
Brookstone's compact ionic hair dryer with true dual-voltage delivers all the power of a full size unit in half the size.
1,875 watts of power dries hair quickly, and its true dual-voltage capacity allows for use around the world. This portable hair dryer converts from 125v to 250v at the flip of a switch. And unlike some dryers that claim to be "dual-voltage," ours allows you to use both speed settings and the cool shot button in the 250v mode.
A built-in ionizer emits negatively charged ions to offset damaging positive ions produced by the environment and conventional hair dryers.
Regular use adds volume to your hair, improves luster, and reduces flyaway and frizzy hair, leaving hair feeling full, healthy and strong. 3" w x 7" l x 3 1/2" h (folded). 69" cord.
Brookstone's travel ionic hair dryer blows the competition away! Order yours now, and get ready to enjoy compact portability, true dual-voltage compatibility and the silky effects of negative ions.
Ionic Dual-Voltage Travel Hair Dryer
Ionic Dual-Voltage Travel Hair Dryer
Brookstone-branded products are backed by a one-year limited warranty. Some massage chairs are backed by a two-year limited warranty (see massage chair product pages for details).
Our innovative products will provide you and your family with years of enjoyment. And with the Brookstone Protection Plus service and replacement plans, you'll have the added peace of mind knowing that if the unexpected does happen, we will simply repair or replace your covered product. Our enhanced coverage goes above and beyond the manufacturer's warranty, saving you time and money.
- 2-Year Extended Replacement Plan $4.99
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Ionic Dual-Voltage Travel Hair Dryer
Ionic Dual-Voltage Travel Hair Dryer
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Simply stunning! is the only word that can be used to describe Landrake for South Somerset's meeting held there on April 15th. With heavy rain, thunder and lightning on the Saturday everyone had their fingers crossed that the forecast for Sunday would be correct (bright sunshine). What a contrast to Saturday, Sunday turned out to be, it was a glorious day, just a little chilly. As always with SSMXC there was some great young talent out to prove their worth and some fast and furious racing was about to get underway.
Open Gallery6 Images
With qualifying practice done and dusted the racing kicked off with MX1. Darren Shears was in a class of his own grabbing the holeshot in every race and then disappearing out of sight to win all three moto's, Ross Flashman enjoyed himself with second overall with a fifth, third and second in moto three. Harvey Banks was third overall, with second place in moto one and then two fifth spots. Ryan Allen had an up and down day to finish fourth overall with a fourth, eighth and a third place in moto three. In fifth place was the flamboyant Anthony Milliar taking sixth in moto one followed by two fourth places. The top six was rounded off by Luke Heaver with a brilliant third in moto one and then two sixth spots.
MX2 were next out and was to be the most competitive group of the day with Oakleaf Kawasaki's Jake Millward and Tommy Alba at it in all three moto's. Millward won the day taking all three wins ahead of Alba who was back after a big off at Canada Heights during the Maxxis a couple of weeks ago. Brilliant to watch these two young guns on full chat! Bradley Bolitho tried to keep with the Oakleaf boys but had to settle with third overall with three third spots.
Ross Churchill was flying on his KTM to fourth overall with two fourths and a sixth in moto three. Jordan Broadway had a great day to finish fifth overall with fifth, sixth and fourth in moto three. Consistently in the top six was Olly Jones with three great rides, sixth in moto one and with two fifth places in moto's two and three.
The Rookies is always a quick group and Landrake was no exception, Robert Davidson took the overall with three well deserved wins. Oliver Osmaston was in sensational form to finish second overall with third in moto one followed by two second places. Alec Carefoot was in third with fourth in moto one and third in moto's two and three. Luke Newman took fourth position with a great second in moto one followed by two fifths. Jake Penny was fifth with a fifth in moto one and sixth in moto's two and three. Luke Sturgeon suffered all day with bad starts but finished a credible sixth place with an eighth in moto's one and three and fourth in moto two.
Another rider in a class of his own was young Josh Gilbert aboard his Buildbase 150 Honda in the Big Wheels taking all three wins. Second overall, Ethan Gatenby with three seconds, in third place with some bad starts was Billy King, taking third in moto's one and two and fifth in the final moto. Joe Jefferies got in amongst it with his Suzuki to take fourth spot with fifth in moto one, fourth in moto two and third in moto three. Fifth was Jack Roberts taking an eighth, a fifth and a sixth. Rounding up the top six was Will Jeonney having two sixth's and seventh in moto three.
The Small Wheel class was another competitive group with Dexter Douglas, Bradley Flagg and Harry Kimber all out for top honors, Douglas took the overall with a second in moto one and two wins in moto's two and three. Flagg edged into second with a win in moto one, second in moto two and third in moto three. Kimber had to settle for third spot with two thirds and a second in moto three. Fourth place went to Harry Linton with two fourths and fifth in the last moto. Archie Osmaston sneaked into fifth spot with two fifths and in moto three a fourth. Oliver Cook was sixth overall with seventh in moto one and sixth in moto's two and three.
The Juniors taking to the whole of the Landrake circuit saw some great racing between Callum Gasson, Lewis Hall, Jack Wankling and Tyler Rowe. Gasson took the overall with a good win in moto one and then two seconds, Hall was second with a fourth in moto one followed by two great wins, Wankling took third with with a second and two thirds, Rowe was fourth with a third and two fourths, Liam Gale rode well to fifth spot with sixth in moto one and fifth in moto's two and three, Preston Williams made the top six with fifth and two sixths.
The Auto's had a slightly shorter track to deal with and Harvey James did it brilliantly with three wins, in second was Jake Pascoe with two great second spots and third in moto three, Dylan Cadwallander pushed all the way to third with two thirds and a great second in moto three, Alfie Calvert had three great fourths, Tyler Westcott took fifth with three fifth spots and Finley James took sixth place with three sixth spots.
A big thanks to Phill Congdon for prepping a fabulous track, one of the best in the country!
Roll on rnd 5 at Marshfield on May the 13th.
Autos Juniors
1st Harvey James 1st Callum Gasson
2nd Jake Pascoe 2nd Lewis Hall
3rd Dylan Cadwallander 3rd Jack Wankling
4th Alfie Calvert 4th Tyler Rowe
5th Tyler Westcott 5th Liam Gale
6th Finley James 6th Preston Williams
Small Wheels Big Wheels
1st Dexter Douglas 1st Josh Gilbert
2nd Bradley Flagg 2nd Ethan Gatenby
3rd Harry Kimber 3rd Billy King
4th Harry Linton 4th Joe Jefferies
5th Archie Osmaston 5th Jack Roberts
6th Oliver Cook 6th Will Jeonney
Rookies Rookies 125
1st Robert Davidson 1st Kieran Banks
2nd Oliver Osmaston 2nd Luke Williams
3rd Alec Carefoot 3rd Oliver McMurray
4th Luke Newman 4th Charlie Page
5th Jake Penny 5th Jack Grant
6th Luke Sturgeon 6th Ryan Harris
1ST Jake Millward 1st Darren Shears
2nd Tommy Alba 2nd Ross Flashman
3rd Bradley Bolitho 3rd Harvey Banks
4th Ross Churchill 4th Ryan Allen
5th Jordan Broadway 5th Anthony Milliar
6th Olly Jones 6th Luke Heaver
Photos are by Haggis Hartman


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National 9/11 Memorial was recently dedicated on the 10th Anniversary of 9/11/2001 when many people lost there lives during the attacks on the USA. The Memorial designed by PWP Landscape Architecture & Micheal Arad have not only created a powerful memorial where families and friends can come to grieve but also a city park that people can use everyday to sit under the trees and enjoy the New York skyline surrounding the site and watch the rebuilding of area with new towers. There are many design elements that required great thought, development and testing including the trees, waterfalls, name arrangement and these were developed by talented people to create the beautiful space we see today.
'The rebuilding of both the memorial together with the surrounding buildings will give the American people a sense of rebirth from the terrible attacks of 9/11.'
Peter Walker
L to R – Trees/Waterfalls ©PWP | Names ©Amy Dreher | Paving ©PWP | Peter Walker & Team reviewing Materials ©PWP
Continue reading National 9/11 Memorial | New York | PWP Landscape Architecture & Michael Arad


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Description: PIII1260 512KHewlett-Packard Part# 249095-001
Overview:Do you and your business need the most powerful and new computer? Almost surely you do. There's an effective and affordable way to harness the power of the newest processors and you'll not empty your pockets. In order to satisfy the demands of its customers Hewlett-Packard offers a variety of processor upgrade options thus eliminating the need of purchasing new computers. You can choose the processor upgrade that suites ideally your computer and your budget.
Part Number249095-001
Products ID141303
Product TypeProcessor
Processor TypePentium III
Clock Speed1.26 GHz
L2 Cache Size512 KB


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Spain successfully defended their EuroBasket title with another powerful and memorable display in the Final against France.
Described by his coach as an artist, Juan Carlos Navarro can reflect on yet another masterpiece as he added the accolade of EuroBasket 2011 MVP to his illustrious collection of accomplishments.
Thousands of fans in Madrid welcomed home Spain's national team after their second consecutive EuroBasket gold-medal triumph.
FYR of Macedonia saw their magical run at the EuroBasket come to an end when Damjan Stojanovski missed a potential game-tying lay-up in the waning seconds of the bronze-medal game against Russia.
EuroBasket 2011 arguably will go into the history books as the most competitive and enthralling edition of the biennial event.
Slovenia is a small country that dares to think and dream Big.
FRABorn : 17.05.1982Height: 1.88
Copyright 2015 FIBA Europe. All rights reserved.Do not duplicate or redistribute in any form.
Ismaninger Str. 21, 81675 Munich, Germany.P. (+49-89) 78 06 08-0 F.:(+49-89) 78 06 08-59


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Mostly, the problem has to do with the laziness of the general citizen who throws around terms about homelessness interchangeably, as if they are only variations on the theme. (kinda like people accusing President Obama of being a Socialist and a Communist and a Nazi and a Muslim all at the same time) "Street People" are not necessarily homeless. Conversely, not all homeless people spend all their time living on the streets. If a person is couch surfing, they are not living on the street, but the home in which they reside is not theirs, and the arrangements made, so to sleep on someone's couch for a period of time are tentative at best.
Does living day to day at a rescue mission constitute a "home"? I have lived in the same place for over 4 years now. But I got this place by being in a program for the homeless. My case manager says I'm no longer homeless, but does this program make me not homeless? Or, is this just a homeless shelter with better amenities? When I lived in a halfway house for the homeless. It was a house owned and operated by a church that took in half a dozen homeless men. My residing there was conditional on my fulfilling certain requirements of the church. Did living there make me not homeless? Is there any difference between the house owned by the church, and the housing I have now - created by a government entity?
Paying rent doesn't seem to be an absolute definition of being homed, either. Most Salvation Army shelters charge the homeless for the right to spend the night there - about 10 dollars each night. Other shelters charge rent as well. Is having to work, do chores, etc., the same as paying rent?
Personally, I think the main consideration that should be made, as to whether a person is homeless or not, should be regarding societies reaction to a person's living situation. A person is not homeless when society accepts and allows for the situation in which people are living. If society gives its o.k., if the police do not harass the resident, if laws are not created so to discourage or inconvenience the person within their living arrangement, then I'd say the person was not homeless. This does not mean that a rescue mission or a shelter is a home. The administration and employees of such places work to get you out of those places as much as possible. So, shelters cannot be considered a home. Neither can living in a motor home, as there is no permanent place for a person to set their motor home. Most camping sites limit how long people can stay at the camps, usually only a couple months.
Only when society allows and accepts a person's living situation, free from any harassment, can that person be considered no longer homeless.


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Note: this cell phone may have carrier / provider logo on it. For more information Click Here
Nokia C2-03 Touch and Type (Unlocked Dualband) Dual Sim GSM Cell Phone
Nokia C2-03 is Nokias third Touch and Type phone and first such form factor to feature Dual-SIM. Up until now, Dual-SIM phones needed to be switched off and the battery removed, so that the SIM card could be inserted. Not now. The Easy Swap feature allows you to open the slot on the side of the phone and simply insert your new SIM, with no need to reboot. Should you have more than two SIM cards, the Nokia C2-03 is capable of remembering the settings for up to five separate cards. So once youve personalised your SIM by giving it its own name and calling settings, youll never have to do it again.
- Nokia C2-03 Touch and Type (Unlocked Dualband) Dual Sim GSM Cell Phone
- User Manual
- Charger
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Equipment Parts and Accessories
At Mission Restaurant Supply you can find a great selection of parts and accessories for your restaurant equipment, like casters, shelf clips, filters, gas hoses, shelves and more! Browse the product offering today and outfit your restaurant equipment with the best parts and accessories on the market.
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Eagle Metal Masters 502809 Aluminum Spillage Pan, 6-1/4 Inch Deep
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Saturday, September 07, 2002Johnson City, Tenn. East Tennessee State survived a slow start and a few injuries to some key players to overcome Mars Hill 20-10 at Memorial Center Saturday night. The Buccaneers, who evened their season record at 1-1, scored two touchdowns in the fourth quarter on a couple of big time plays by two of ETSU's big time players. Fullback Scott Carter (Knoxville, Tenn.) gave the Bucs the lead, 13-7, on a 13-yard touchdown run. Then, after a Mars Hill field goal, wide out Cecil Moore (Morristown, Tenn.)caught a 38-yard TD pass from quarterback Dashannon Gamble (Ladson, S.C.) for the game's final score. The three abovementioned players provided a much-needed spark for East Tennessee State. Moore caught three balls for 93 yards, including a 42-yard reception from Jason Davis (Sevierville, Tenn.). Carter rushed for 60 yards on seven carries (8.6 avg.), while Gamble was a perfect two-for-two in the passing category with two TD passes. The second-half outburst came despite the loss of running back Mondo Miller (Chamblee, Ga.), starting outside linebacker Marco Bryant (Morganton, N.C.) and All-American cornerback Tony Tiller (Lithonia, Ga.) to injuries. All three players failed to return to the game. Although the Bucs were missing some of their gladiators on the defensive end, ETSU came up with some big stops late in the game preventing any type of a comeback by the Mountain Lions. The visitor's last two possesions resulted in interceptions courtesy of Allen Davis and Montreal Harkely (Hanahan, S.C.). Linebackers Scott Brumett (Pioneer, Tenn.) and Andrew Foerster (Kingsport, Tenn.) were the big run stoppers for ETSU, leading the Buccaneers with 13 and 12 tackles, respectively. One bright spot for Mars Hill was senior running back Travis McFadden who became the Mountain Lion's all-time leading rusher after gaining 97 yards on 32 rushing attempts. McFadden had the team's lone touchdown on a three-yard scamper in the first quarter. However, the running back's shining moment was overcast due to an injury suffered late in the fourth quarter. ETSU will travel to Boiling Springs, N.C. next Saturday to take on the Bulldogs of Gardner-Webb. Kickoff is scheduled for 6:00 p.m.
|Copyright ©2015 East Tennessee State Athletics. All Rights Reserved.