text:
|Número de publicación
|Tipo de publicación
|Número de solicitud
|Fecha de publicación
|1 Abr 2003
|Fecha de presentación
|18 Feb 2000
|Fecha de prioridad
|27 Ago 1998
|También publicado como
|Número de publicación
|Eugene P. Marsh, Stefan Uhlenbrock
|Cesionario original
|Micron Technology, Inc.
|Exportar cita
|BiBTeX, EndNote, RefMan
|Citas de patentes (17), Otras citas (3), Citada por (66), Clasificaciones (22), Eventos legales (13)
|Enlaces externos: USPTO, Cesión de USPTO, Espacenet
This application is a continuation-in-part (CIP) of application Ser. No. 09/140,878, filed Aug. 27, 1998, U.S. Pat. No. 6,074,945, and application Ser. No. 09/140,932, filed Aug. 27, 1998, U.S. Pat. No. 6,133,159.
1. Field of the Invention
The present invention relates to chemical vapor deposition of films of ruthenium. More particularly, the invention relates to direct liquid injection of precursor solutions of ruthenium compounds for use in chemical vapor deposition of ruthenium and ruthenium oxide. The invention further relates to solvated ruthenium precursor formulations suitable for forming vaporized ruthenium precursors for use in chemical vapor deposition of ruthenium films onto substrates.
2. State of the Art
Use of chemical vapor deposition ("CVD") methods for depositing a thin film of material on a substrate, such as a silicon wafer or other exposed material surface on a wafer or other semiconductor base, are widely known and used in the semiconductor fabrication industry. In typical CVD processes, a precursor, such as a heat decomposable volatile compound, is contacted with a substrate which has been heated to a temperature above the decomposition temperature of the precursor. In this fashion, a coating, which typically comprises a metal, metal mixture or alloy, ceramic, metal compound, or a mixture thereof, depending on the choice of precursors and reaction conditions, is formed on the substrate.
Use of CVD as a thin film formation method includes numerous desirable characteristics, such as the ability to readily control the composition of the thin film and the ability to form a thin film without contamination of, or damage to, the substrate. CVD may also be used to deposit films of metals into vias, trenches, and other recesses or stepped structures. In situations where conformal thin-film deposition is required, CVD techniques are a preferred method of deposition, since evaporation and sputtering techniques cannot be used to form a conformal thin-film deposition layer.
While CVD techniques have been described in the literature with reference to many metals and metalloids, commercial use of CVD has been predominantly confined to deposition of a few metals and metal compounds, such as tungsten, silicon, titanium nitride, silicon oxide, iron, and aluminum. CVD of other metals has been limited due to a variety of reasons, including formation of poor film quality, requirement of high processing temperatures, lack of suitable precursor compounds, and instability of the precursors used in the deposition systems. The availability of suitable volatile and heat-decomposable precursor compounds appears to be a significant limiting factor in the application of CVD to the production of metal-containing films.
In integrated circuit processing, selected precursor compounds have been used to form conducting films that can maintain their integrity at elevated temperatures. Ruthenium and ruthenium dioxide (RuO2) are particularly well-suited as conducting films for such applications since they have good electrical conductivities, exhibit high stability over a wide temperature range and exhibit good adherence to silicon, silicon dioxide, and ceramic oxides. Films of ruthenium and ruthenium oxide deposited by CVD have been proposed to be useful for contact metallizations, diffusion barriers, and gate metallizations. M. L. Green et al., J. Electrochem. Soc., 132, 2677 (1985).
There are a wide variety of ruthenium compounds that can be used as precursors for the preparation of such films. Many are particularly well suited for use in chemical vapor deposition techniques. For example, U.S. Pat. No. 5,372,849 to McCormick et al. discloses the use of ruthenium compounds containing carbonyl ligands and other ligands. However, such compounds are typically less volatile and not as easily used in chemical vapor deposition techniques.
Another use of ruthenium precursors for the preparation of films involves use of a chemical spray deposition process wherein tris(acetylacetonate)ruthenium in butanol is converted into an aerosol spray using a hydrogen/nitrogen mixture as the carrier gas. Triruthenium dodecacarbonyl, ruthenocene, and tris(acetylacetonate)ruthenium have also been compared as CVD precursors in the formation of ruthenium and RuO2 by M. Green et al., in J. Electrochem. Soc., 132, 2677 (1985). However, because none of the aforementioned precursors are very volatile, high deposition rates using these precursors are difficult to obtain.
U.S. Pat. No. 4,250,210, issued Feb. 10, 1981 to Crosby et al., discloses the use of ruthenium 1,3 dione compounds, such as tris(acetylacetonate)ruthenium and its fluorinated derivatives, in the CVD of ruthenium films. Although the fluorinated ligands are said to provide greater volatility and good deposition rates when heated to over 200° C., difficulties in attaining uniform coatings are noted due to the poor stability of the precursors. Furthermore, organic byproducts with very low vapor pressures are formed and collect in the reactor during the volatilization process, which can create a serious contamination problem in production-scale applications of the tris(acetylacetonate)ruthenium precursors.
Also disclosed in the Crosby patent is the use of ruthenium carbonyl chloride and penta(trifluorophosphine)ruthenium as precursors for ruthenium CVD. Use of these precursor compounds, however, is undesirable because the obtainable rates of deposition of ruthenium are very low and ruthenium carbonyl chloride corrodes certain substrates, making a consistent product preparation difficult or impossible.
In view of the described shortcomings, it would be useful to utilize ruthenium precursor formulas having both high stability and high volatility that are easy to prepare and use in low temperature CVD processes and which are capable of depositing high-quality, continuous films of ruthenium having good surface morphology. While many ruthenium precursor compounds possessing such characteristics are known, those same compounds typically have freezing points around room temperature. Thus, in order to prevent these ruthenium precursor compounds from freezing, the system typically needs to be heated. Using a solution of ruthenium precursor compounds in an organic solvent instead of the neat precursor for a liquid delivery system would eliminate the necessity of heating the direct liquid injection (DLI) system. These same precursor compounds, however, are usually very temperature sensitive, with heating at slightly elevated temperatures resulting in the decomposition of the precursor. Side products of this decomposition are solids, which are detrimental to a liquid delivery process as well. Also measuring and controlling extremely small amounts (e.g., microliter/min) of ruthenium precursors is very difficult.
Thus, in view of the shortcomings of the available precursors, a continuing need exists for improved ruthenium precursor formulations useful for the CVD of films of ruthenium and ruthenium-containing films (e.g., RuO2, SrRuO3, RuSix). More specifically, a need exists for high-volatility ruthenium precursor formulations that are highly stable, maintain a ruthenium precursor in a soluble state, and do not require heating of the precursor formulation prior to introducing the same into a CVD system. The precursor formulations should also be easy to prepare, easy to measure, convenient to use in low-temperature CVD processes, and available in more manageable delivery forms (i.e., ml/min rate).
The present invention provides a method for applying a film of ruthenium or ruthenium oxide to the surface of a substrate by employing the techniques of chemical vapor deposition (CVD) to decompose stable ruthenium precursor formulations which include a Ru precursor compound dissolved in a solvent capable of solubilizing the Ru precursor compound.
The method of the present invention provides an improved CVD technique wherein continuous Ru films of high quality and good surface morphology can be deposited at low temperatures by utilizing the aforementioned Ru formulations as precursors in the CVD process. In the absence of an oxygen source, the deposited films consist essentially of Ru in that they contain only minor amounts of residual elements, thus forming essentially pure films of Ru. The aforementioned precursor formulations may be used as neat liquids, in mixtures, or in additional solvents for delivery by liquid injection\flash evaporation techniques.
The present invention also provides a CVD method where the precursor formulations either contain significant amounts of oxygen or are used in combination with reactive carrier gases (e.g., oxidizers such as O2 or N2O) to deposit films of RuO2. Ruthenium metal deposited on a polysilicon electrode can also be subjected to post-deposition rapid thermal oxidation (RTO) to cause siticidation of the bottom layer and oxidation of the top layer of the Ru film. This layer configuration can also be formed by depositing Ru metal first (to be later silicided) and then forming an oxide thereon either in situ, through the addition of an oxidizer, or by post deposition anneal.
Alternating layers of essentially pure Ru and of RuO2 can also be deposited on a single substrate by selecting and alternating the precursors or reactive carrier gases present in the environment during the CVD process(es).
The method of the present invention further provides a technique for making a vaporized ruthenium precursor for use in CVD of ruthenium and ruthenium-containing films onto substrates wherein a ruthenium precursor formulation, having a ruthenium-containing precursor compound and a solvent capable of solubilizing the ruthenium-containing precursor compound, is vaporized.
FIG. 1 is a schematic of a chemical vapor deposition system suitable for use in the method of the present invention.
A. Ruthenium Precursor Formulations
In the present invention, ruthenium precursor formulations include a ruthenium-containing precursor compound and a solvent capable of solubilizing the ruthenium-containing precursor compound. Illustrative examples of precursor compounds which can be used in the Ru precursor formulation of the instant invention include cyclopentadienetricarbonyl ruthenium, cyclohexadienetricarbonyl ruthenium, cycloheptadienetricarbonyl ruthenium, norbornadiene tricarbonyl ruthenium, cyclohexadienetetracarbonyl ruthenium, diethylenetricarbonyl ruthenium, dipropylene tricarbonyl ruthenium, and allyltetracarbonyl ruthenium. Illustrative examples of solvents which can be used in the ruthenium precursor formulation of the instant invention include hexane, hexanes (e.g., a mixture of hexane isotopes), pentane, heptane, butylacetate, and derivatives and combinations thereof. It is understood that solvents suitable for use in the present invention include any organic or inorganic solvent which solubilizes ruthenium-containing precursor compounds without decomposing the same.
It has been found that the ruthenium precursor formulations and solutions of the present invention prevent the ruthenium precursor compounds from freezing at room temperature, thus, eliminating the need to heat delivery lines of the CVD apparatus and the resulting decomposition of the ruthenium precursor compounds during the heating process. Additionally, solvating the ruthenium precursor compounds increases the precision of the delivery system by increasing the delivery from an inconvenient measurement rate for the neat compound, such as a microliter/min rate, to a more advantageous measuring rate, such as a ml/min rate used with the ruthenium precursor formulations of the present invention.
B. The CVD Process
The invention broadly relates to use of CVD to deposit high-quality films of Ru at low temperatures on the surface of a substrate and, more particularly, to DLI of precursor solutions into a vaporizer for use in a CVD process. Methods of the present invention are particularly well suited for CVD processes employing vapor deposition techniques, such as flash vaporization.
The invention can be carried out through any number of known CVD processes requiring vaporization of precursors. Following vaporization of the precursor formulations, CVD processes may be modified by altering such variables as, for example, the heating method, gas pressure, and/or chemical reaction. Conventional CVD methods suitable for use with the solvated Ru precursors of the present invention include both cold-wall type CVD, wherein only a deposition substrate is heated through any number of methods such as induction heating or use of hot stages. Alternatively, hot-wall type CVD, in which an entire reaction chamber is heated, can be used. The CVD processes can also vary with respect to pressure requirements and may include atmospheric CVD, in which the reaction occurs at a pressure of about one atmosphere, or low-pressure CVD, in which reaction occurs at pressures between about 10−1 to about 100 torr.
It is understood that the CVD process can be carried out in any type of apparatus in which the substrate and/or the Ru precursor is heated. CVD apparatus designs suitable for use in the precursor formulations of the present invention include, but are not limited to, hot wall reactors, cold wall reactors, plasma-assisted reactors, radiation beam assisted reactors, and the like. One such suitable CVD apparatus design, in the form of a horizontal tube CVD reactor, is schematically depicted in FIG. 1.
As shown in FIG. 1, a typical CVD process begins with the placement of substrate 6, on which deposition is to occur, within reaction chamber 4 of reactor 2. One or more units of substrate 6 can be held in place within reaction chamber 4 in, for example, a vertical position, by a suitable holder 20. Substrate 6 is then heated to a temperature sufficient to decompose and vaporize the precursor complex. A vacuum (not shown), which can be created by any suitable vacuum pump, can be provided at opposite end 12 of reaction chamber 4 to create a vacuum within reaction chamber 4. Precursor vapor 8 is introduced into reservoir 10 located at one end of reactor 2 and exposed to a vacuum by opening valve 14 located between reaction chamber 4 and reservoir 10.
It should be understood that the ruthenium precursor formulations may be vaporized in reservoir 10 or introduced into reservoir 10 as a pre-vaporized precursor. Regardless of where vaporization takes place, a preferred method for vaporization of the Ru precursors for CVD is DLI of the solvated Ru precursor formulations into a flash vaporizer. It has been found that DLI of Ru precursor solutions of the instant invention allows increased deposition rates for thermally unstable compounds and facilitates the monitoring of material consumption.
Following vaporization, precursor vapor 8 then passes into reaction chamber 4 containing one or more units of substrate 6. Reaction chamber 4 is maintained at a preselected temperature, by means of a furnace 16, which is effective to decompose precursor vapor 8 so as to deposit a film 18 containing Ru on the exposed surfaces of substrate 6.
Generally, a thermal reactor CVD system can be used to heat the substrate to a temperature in excess of the decomposition temperature of the selected Ru precursor. Thermal CVD may be effected within any type of apparatus in which the substrate and/or the precursor is heated. By heating the substrate at a sufficiently high temperature, the decomposition reaction occurs at the surface of this substrate. Likewise, in an energy-beam induced CVD technique, an energy source (i.e., ion beam) is advantageously used to heat the substrate such that the decomposition of the precursor occurs predominantly at the substrate surface.
Use of these thermal CVD processes can provide blanket deposition of Ru on substrates. Additionally, selected area depositions of Ru may be accomplished by using a masking material (e.g., resist material) in conjunction with the thermal CVD process or by utilizing a more selective thermal CVD process, such as an energy-beam assisted CVD to selectively heat specific portions of the substrate upon which deposition or "writing" of Ru will be performed.
Many of the processes used for CVD of Ru utilize low pressure systems. However, no criticality with respect to the pressure in the system exists in practicing the present invention. While typical operating pressures range from about 0.1 to about 10 torr, higher or lower pressures are also acceptable. These variations in pressure are largely determined by a number of factors, such as resultant film conformity, the vapor pressure of the Ru precursor compound, the evacuation speed and efficiency of the vacuum equipment, and physical characteristics of inert carrier gases that can be added to adjust the total pressure.
The growth of a pure ruthenium film can be conducted by utilizing any of the aforementioned CVD methods and apparatus designs, using a solvated ruthenium precursor formulation under conditions wherein reactive gases are absent. Alternatively, RuO2 films can be formed by contacting any of the vaporized Ru precursor formulations with a heated substrate in the presence of an oxidizing agent. The oxidizing agent may be any gaseous reactant which is capable of reacting with the solvated Ru precursor compounds at the decomposition temperatures of the latter to form Ru oxide deposits. Suitable oxidizing agents for use with the present method include, but are not limited to, air, oxygen, and oxygen-containing compounds, such as nitrous oxide, ozone, hydrogen peroxide, tetrahydrofuran, water, carbon dioxide, sulfur dioxide, sulfur trioxide (sulfuric anhydride), organic peroxides, and are preferably selected from mildly oxidizing gaseous oxygen sources.
Oxidizing agents may alternatively be introduced into the reactor in combination with a carrier gas. The present method produces conductive RuO2 films on substrates, such as silicon, when the depositions are carried out in atmospheres containing the aforementioned oxidizing agents. X-ray photoelectron spectroscopy (XPS) reveals the deposition of a pure RuO2 film from (C6H8)Ru(CO)3, the RuO2 film exhibiting a constant oxygen concentration throughout the depth of the deposited film.
The instant process can be modified by depositing the Ru metal first, forming the oxide in situ by oxidizing the Ru metal through any of the oxidizing processes described herein, and siliciding the bottom layer of Ru metal. Alternatively, the Ru layer can be oxidized by post deposition anneal.
Various other modifications to the process of the instant invention are envisioned. For example, other metals, alloys, and mixtures thereof can also be incorporated into the solvated precursor formulations and deposited, together with Ru or RuO2, onto a substrate. Where non-oxidized Ru metal-containing films are desirable, the deposition is carried out under nonoxidizing conditions. Alternatively, the deposition can be carried out using relatively low flows of oxidizers or weak oxidizing agents, such as N2O.
The processes described herein result in high-quality Ru films which can be deposited at various thicknesses. The thickness of the deposited layer can be modified by controlling a number of variables, such as the vaporization rate for the Ru precursor formulation, the time and temperature of deposition, the flow rate of the vapor of the Ru precursor, the length of contact time between the substrate and the Ru precursor compounds, and the volatility of the specific Ru precursor and solvent selected. Products and structures manufactured according to the process of this invention can be made to have any desired Ru-containing layer thickness. A preferred range of thickness for semiconductor or electronic applications is from a monomolecular layer to about 0.1 micron.
The processes described herein are useful to deposit Ru and ruthenium-containing materials (e.g., RuO2, RuIr, SrRuO3, RuSix, Ru alloys, etc.) onto a substrate, such as a semiconductor substrate, to create diffusion barriers, electrode materials, semiconductor dopants, contact metallizations, interconnection traces, and the like. Any of the processes described herein advantageously provide low-temperature deposition of Ru and RuO2-containing layers having conformal coverage and excellent step coverage.
The present invention will be understood more fully from the description which follows, and from the accompanying examples, in which particular embodiments of the process of the invention are described. It is to be understood at the outset, however, that persons of ordinary skill in the appropriate arts may modify the invention herein described while still achieving the favorable results of this invention. Accordingly, the description and examples which follow are to be understood as being a broad teaching disclosure directed to persons of ordinary skill in the appropriate arts, and are not to be understood as limiting upon the present invention. The scope of the invention is to be determined by the appended claims.
Tricarbonyl [(1,2,3,4-η)-1,3-cyclohexadiene] ruthenium (hereinafter "(C6H8)Ru(CO)3") was prepared by mixing 10 gm of Ru3(CO)12 (Strem Chemicals, Inc., Newburyport, Mass.), 30 mls of benzene (Aldrich Chemical Co., Milwaukee, Wis.), and 13.5 ml of 1,3-cyclohexadiene (9 equivalents, 0.141 mol) (Aldrich Chemical Co., Milwaukee, Wis.) in a glass flask. The resulting solution was heated to 80° C. and refluxed for 48 hours, at which point the solution turned yellow in color.
Refluxing was halted, the flask was isolated and attached to a vacuum line, and the bulk of the benzene was then removed from the flask. The remaining portion of the solution was cannula transferred to a mini-distillation apparatus, where a pressure in manifold of about 6 Torr was established. Remaining amounts of benzene and 1,3-cyclohexadiene were removed by warming the contents of the flask by heating a mantle to about 30° C. The flask was then heated to about 60° C. under static vacuum and the receiver was cooled in order to remove the product of the reaction, a slightly yellow-colored oil of (C6H8)Ru(CO)3. 2.65 grams of (C6H8)Ru(CO)3 (0.01 mole) were added to a 0.10 liter volumetric flask at room temperature (approximately 20-25° C. (68-77° F.)) and hexanes (a mixture of hexane isotopes) were added to obtain a total volume of 0.10 liters of 0.1M solution of (C6H8)Ru(CO)3 in hexanes.
The precursor (C6H8)Ru(CO)3 solution, prepared according to the description of Example I, was delivered into a flash vaporizer at a concentration of 0.1M and at a rate of 0.24 ml/min using a syringe pump. A wafer of p-type silicon was placed in the CVD chamber and heated to 190° C. (as measured by a thermocouple in direct contact with the surface of the wafer). Concurrently with the heating of the wafer, the chamber pressure was stabilized at 5.0 Torr and 50 sccm of He used to deliver the (C6H8)Ru(CO)3 vapor to the chamber. The chamber was evacuated, and the wafer was cooled to room temperature.
A smooth, highly reflective coating of metallic Ru was formed on the wafer. X-ray photoelectron spectroscopy (XPS) was used to profile the film deposited on the wafer. XPS revealed a pure Ru film having a thickness of approximately 1700 Å.
Deposition of RuO2 is carried out using a similar method to that described in Example II, except that O2 at 50 sccm is added to the He used to deliver the (C6H8)Ru(CO)3 vapor to the chamber. A one-minute deposition is then carried out and the wafer is allowed to cool to room temperature. A smooth, highly reflective coating of metallic RuO2 is formed on the wafer.
|Patente citada
|Fecha de presentación
|Fecha de publicación
|27 Dic 1977
|10 Feb 1981
|The International Nickel Co., Inc.
|Chemical vapor deposition
|17 Jul 1989
|1 Ene 1991
|National Semiconductor Corporation
|Electrodes for electrical ceramic oxide devices
|26 Oct 1989
|14 Jul 1992
|The Regents Of The University Of California
|Low temperature organometallic deposition of metals
|13 Dic 1991
|20 Abr 1993
|Advanced Technology Materials, Inc.
|Method for delivering an involatile reagent in vapor form to a CVD reactor
|28 Jul 1992
|24 May 1994
|Minnesota Mining & Mfg. Co./Regents Of The University Of Minnesota
|Chemical vapor deposition of iron, ruthenium, and osmium
|14 May 1993
|4 Oct 1994
|Syracuse University
|Chemical vapor deposition process employing metal pentadienyl complexes
|18 Ene 1994
|13 Dic 1994
|Minnesota Mining And Manufacturing Company
|Chemical vapor deposition of iron, ruthenium, and osmium
|11 Sep 1995
|8 Abr 1997
|Kabushiki Kaisha Toshiba
|Method of manufacturing a perovskite thin film dielectric
|15 May 1996
|10 Jun 1997
|Hyundai Electronics Industries Co., Ltd.
|Method for fabricating a diffusion barrier metal layer in a semiconductor device
|31 Mar 1995
|13 Oct 1998
|Advanced Technology Materials, Inc.
|Precursor compositions for chemical vapor deposition, and ligand exchange resistant metal-organic precursor solutions comprising same
|17 Abr 1998
|9 Nov 1999
|The President And Fellows Of Harvard University
|Liquid precursors for formation of metal oxides
|27 Ago 1998
|16 May 2000
|Micron Technology, Inc.
|Precursor chemistries for chemical vapor deposition of ruthenium and ruthenium oxide
|27 Ago 1998
|13 Jun 2000
|Micron Technology, Inc.
|Methods for preparing ruthenium metal films
|27 Ago 1998
|17 Oct 2000
|Micron Technology, Inc.
|Methods for preparing ruthenium oxide films
|16 Abr 1998
|4 Sep 2001
|Advanced Technology Materials, Inc.
|Chemical vapor deposition process for fabrication of hybrid electrodes
|20 Ene 2000
|13 Nov 2001
|Asahi Denka Kogyo Kabushiki Kaisha
|Process of producing a ruthenium or ruthenium oxide thin film
|Título no disponible
|Cowles et al., Chemical Communications, p. 392 (no month).
|Green et al., "Chemical Vapor Deposition of Ruthenium and Ruthenium Dioxide Films", J. Electrochem. Soc., vol. 132, No. 111, pp. 2677-2685, Nov. 1985.
|Liao et al., "Characterization of RuO2 thin films depositied on Si by metal-organic chemical vapor deposition", Thin Solid Films 287, pp. 74-79, 1996.
|Patente citante
|Fecha de presentación
|Fecha de publicación
|11 Oct 2001
|11 Nov 2003
|Micron Technology, Inc.
|Capacitor with oxygenated metal electrodes and high dielectric constant materials
|16 Abr 2003
|18 May 2004
|Micron Technology, Inc.
|Surface treatment of an oxide layer to enhance adhesion of a ruthenium metal layer
|11 Feb 2003
|11 Ene 2005
|Micron Technology, Inc.
|Solvated ruthenium precursors for direct liquid injection of ruthenium and ruthenium oxide
|17 Dic 2002
|18 Ene 2005
|Micron Technology, Inc.
|Method of forming ruthenium and ruthenium oxide films on a semiconductor structure
|21 Abr 2003
|29 Mar 2005
|Micron Technology, Inc.
|Methods for preparing ruthenium and osmium compounds and films
|18 Mar 2003
|26 Abr 2005
|Micron Technology, Inc.
|Method of forming a substrate having a surface comprising at least one of Pt, Pd, Co and Au in at least one of elemental and alloy forms
|20 Abr 2000
|10 Ene 2006
|International Business Machines Corporation
|Precursor source mixtures
|10 Mar 2004
|9 May 2006
|Honeywell International, Inc.
|High bond strength interlayer for rhenium hot gas erosion protective coatings
|10 Ago 2004
|22 May 2007
|Asm International N.V.
|Process for producing metal thin films by ALD
|4 Ago 2003
|4 Sep 2007
|Applied Materials, Inc.
|Ruthenium layer formation for copper film deposition
|1 Mar 2005
|4 Sep 2007
|Applied Materials, Inc.
|Reduction of copper dewetting by transition metal deposition
|12 Abr 2005
|18 Sep 2007
|Micron Technology, Inc.
|Method of forming a catalytic surface comprising at least one of Pt, Pd, Co and Au in at least one of elemental and alloy forms
|18 May 2004
|16 Oct 2007
|Micron Technology, Inc.
|Surface treatment of an oxide layer to enhance adhesion of a ruthenium metal layer
|31 Ago 2004
|8 Abr 2008
|Micron Technology, Inc.
|Methods of forming conductive materials
|22 May 2003
|29 Jul 2008
|Applied Materials, Inc.
|Noble metal layer formation for copper film deposition
|10 Dic 2004
|30 Sep 2008
|Applied Materials, Inc.
|Ruthenium as an underlayer for tungsten film deposition
|12 Dic 2007
|2 Feb 2010
|Asm Japan, K.K.
|Method for forming Ta-Ru liner layer for Cu wiring
|10 Jul 2008
|9 Feb 2010
|Mei Chang
|Noble metal layer formation for copper film deposition
|14 Mar 2006
|23 Feb 2010
|Asm International N.V.
|Selective deposition of noble metal thin films
|6 Nov 2006
|23 Mar 2010
|Applied Materials, Inc.
|Apparatus and process for plasma-enhanced atomic layer deposition
|22 Ago 2008
|6 Abr 2010
|Applied Materials, Inc.
|Ruthenium or cobalt as an underlayer for tungsten film deposition
|29 Sep 2008
|15 Jun 2010
|Applied Materials, Inc.
|Selective ruthenium deposition on copper materials
|25 Sep 2006
|22 Jun 2010
|Mecs, Inc.
|Ruthenium oxide catalysts for conversion of sulfur dioxide to sulfur trioxide
|29 May 2008
|21 Sep 2010
|Asm Japan K.K.
|Ruthenium alloy film for copper interconnects
|7 Abr 2006
|16 Nov 2010
|Applied Materials, Inc.
|Method of recovering valuable material from exhaust gas stream of a reaction chamber
|6 Nov 2006
|14 Dic 2010
|Applied Materisals, Inc.
|Apparatus and process for plasma-enhanced atomic layer deposition
|21 Feb 2008
|15 Mar 2011
|Air Liquide Electronics U.S. Lp
|Methods for forming a ruthenium-based film on a substrate
|26 Mar 2004
|22 Mar 2011
|Applied Materials, Inc.
|Ruthenium layer formation for copper film deposition
|28 Feb 2008
|7 Jun 2011
|Asm International N.V.
|Method of growing electrical conductors
|30 Dic 2009
|26 Jul 2011
|Asm International N.V.
|Selective deposition of noble metal thin films
|14 Mar 2006
|27 Sep 2011
|Asm International N.V.
|Enhanced deposition of noble metals
|29 Ago 2008
|27 Dic 2011
|Asm Japan K.K.
|Atomic composition controlled ruthenium alloy film formed by plasma-enhanced atomic layer deposition
|14 Jun 2007
|14 Feb 2012
|Aixtron Inc.
|Method for self-limiting deposition of one or more monolayers
|14 Oct 2008
|13 Mar 2012
|Asm Japan K.K.
|Method for forming metal film by ALD using beta-diketone metal complex
|14 Oct 2008
|25 Sep 2012
|Asm Genitech Korea Ltd.
|Methods of depositing a ruthenium film
|2 Jul 2010
|11 Dic 2012
|Asm America, Inc.
|Deposition of ruthenium or ruthenium dioxide
|30 Dic 2010
|22 Ene 2013
|L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude
|Ruthenium-containing precursors for CVD and ALD
|22 Sep 2006
|26 Mar 2013
|L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés George Claude
|Method for the deposition of a ruthenium containing film
|20 Ene 2011
|7 May 2013
|Air Liquide Electronics U.S. Lp
|Methods for forming a ruthenium-based film on a substrate
|21 Sep 2011
|6 Ago 2013
|Asm International N.V.
|Enhanced deposition of noble metals
|3 Jun 2011
|17 Sep 2013
|Asm International N.V.
|Method of growing electrical conductors
|21 Feb 2013
|17 Jun 2014
|L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
|Method for the deposition of a ruthenium-containing film
|22 Dic 2010
|14 Oct 2014
|L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude
|Use of ruthenium tetroxide as a precursor and reactant for thin film depositions
|21 Jul 2011
|6 Ene 2015
|Asm International N.V.
|Selective deposition of noble metal thin films
|8 Ago 2012
|6 Ene 2015
|Sigma-Aldrich Co. Llc
|Alkyl-substituted allyl carbonyl metal complexes and use thereof for preparing dielectric thin films
|27 Jul 2010
|12 May 2015
|Sigma-Aldrich Co. Llc
|High molecular weight alkyl-allyl cobalttricarbonyl complexes and use thereof for preparing dielectric thin films
|16 Oct 2007
|19 May 2015
|Applied Materials, Inc.
|Apparatus and process for plasma-enhanced atomic layer deposition
|20 Abr 2012
|8 Sep 2015
|Asm International N.V.
|Metal silicide, metal germanide, methods for making the same
|4 Ago 2003
|3 Jun 2004
|Mei Chang
|Ruthenium layer formation for copper film deposition
|18 May 2004
|28 Oct 2004
|Marsh Eugene P.
|Surface treatment of an oxide layer to enhance adhesion of a ruthenium metal layer
|26 Mar 2004
|2 Dic 2004
|Applied Materials, Inc.
|Ruthenium layer formation for copper film deposition
|10 Ago 2004
|27 Ene 2005
|Titta Aaltonen
|Process for producing metal thin films by ALD
|31 Ago 2004
|10 Feb 2005
|Haining Yang
|Methods of forming metal-comprising materials and capacitor electrodes; and capacitor constructions
|12 Abr 2005
|1 Sep 2005
|Marsh Eugene P.
|Method of forming a catalytic surface comprising at least one of Pt, Pd, Co and Au in at least one of elemental and alloy forms
|10 Mar 2004
|15 Sep 2005
|Mittendorf Donald L.
|High bond strength interlayer for rhenium hot gas erosion protective coatings
|22 May 2003
|6 Oct 2005
|Applied Materials, Inc.
|Noble metal layer formation for copper film deposition
|22 Ago 2005
|23 Feb 2006
|Micron Technology, Inc.
|Methods of forming conductive materials
|10 Dic 2004
|15 Jun 2006
|Applied Materials, Inc.
|Ruthenium as an underlayer for tungsten film deposition
|20 Ene 2006
|13 Jul 2006
|Applied Materials, Inc.
|Ruthenium layer formation for copper film deposition
|1 Mar 2005
|7 Sep 2006
|Applied Materials, Inc.
|Reduction of copper dewetting by transition metal deposition
|19 Jun 2006
|11 Ene 2007
|Peter Baumann
|Process for the self-limiting deposition of one or more monolayers
|15 Jul 2005
|18 Ene 2007
|Jani Hamalainen
|Atomic layer deposition of noble metal oxides
|27 Jul 2010
|12 Jul 2012
|Sigma-Aldrich Co. Llc
|High molecular weight alkyl-allyl cobalttricarbonyl complexes and use thereof for preparing dielectric thin films
|14 Jun 2006
|20 Dic 2007
|Aixtron Ag
|Method for the deposition of layers in a process chamber used in the production of electronic components comprises using a first starting material containing two beta-diketones and a diene coordinated with a ruthenium atom
|7 Dic 2005
|27 Jul 2006
|Aixtron Ag
|Method for the self-limited deposition of one or more monolayers and corresponding suitable starting material
|29 Oct 2008
|7 May 2009
|Air Liquide
|Ruthenium and osmium precursor synthesis method
|Clasificación de EE.UU.
|Clasificación internacional
|Clasificación cooperativa
|Clasificación europea
|18 Feb 2000
|19 Oct 2004
|Certificate of correction
|8 Sep 2006
|Fee payment
Year of fee payment: 4
|9 Dic 2009
Owner name: MOSAID TECHNOLOGIES INCORPORATED, CANADA
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:MICRON TECHNOLOGY INC.;REEL/FRAME:023620/0860
Effective date: 20090609
|1 Sep 2010
|Fee payment
Year of fee payment: 8
|10 Ene 2012
Owner name: ROYAL BANK OF CANADA, CANADA
Free format text: U.S. INTELLECTUAL PROPERTY SECURITY AGREEMENT (FOR NON-U.S. GRANTORS) - SHORT FORM;ASSIGNORS:658276N.B. LTD.;658868 N.B. INC.;MOSAID TECHNOLOGIES INCORPORATED;REEL/FRAME:027512/0196
Effective date: 20111223
|13 Mar 2014
Owner name: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.,
Free format text: CHANGE OF NAME;ASSIGNOR:MOSAID TECHNOLOGIES INCORPORATED;REEL/FRAME:032439/0638
Effective date: 20140101
|7 Ago 2014
Owner name: CONVERSANT IP N.B. 276 INC., CANADA
Free format text: RELEASE OF SECURITY INTEREST;ASSIGNOR:ROYAL BANK OF CANADA;REEL/FRAME:033484/0344
Effective date: 20140611
Owner name: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.,
Free format text: RELEASE OF SECURITY INTEREST;ASSIGNOR:ROYAL BANK OF CANADA;REEL/FRAME:033484/0344
Effective date: 20140611
Owner name: CONVERSANT IP N.B. 868 INC., CANADA
Free format text: RELEASE OF SECURITY INTEREST;ASSIGNOR:ROYAL BANK OF CANADA;REEL/FRAME:033484/0344
Effective date: 20140611
|3 Sep 2014
Owner name: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.,
Free format text: CHANGE OF ADDRESS;ASSIGNOR:CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.;REEL/FRAME:033678/0096
Effective date: 20140820
|9 Sep 2014
Owner name: ROYAL BANK OF CANADA, AS LENDER, CANADA
Free format text: U.S. PATENT SECURITY AGREEMENT (FOR NON-U.S. GRANTORS);ASSIGNOR:CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.;REEL/FRAME:033706/0367
Effective date: 20140611
Owner name: CPPIB CREDIT INVESTMENTS INC., AS LENDER, CANADA
Free format text: U.S. PATENT SECURITY AGREEMENT (FOR NON-U.S. GRANTORS);ASSIGNOR:CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.;REEL/FRAME:033706/0367
Effective date: 20140611
|7 Nov 2014
|Maintenance fee reminder mailed
|1 Abr 2015
|Lapse for failure to pay maintenance fees
|19 May 2015
|Expired due to failure to pay maintenance fee
Effective date: 20150401


text:
Aloha there at our free ringtones website, where you may get killer ringtones for your iPhone. Today we have a ringtone of "Our Song" by Taylor Swift as well as 13232 other ringtones by Taylor Swift. "Our Song" is the best track from the "Taylor Swift" album that was issued by Taylor Swift at their major label together with other 35 tracks. You can listen to all 89 Taylor Swift – "Our Song" ringtone variations available here and download it for free just in a click. You can also listen to other 10 albums produced by Taylor Swift for all time. "Our Song" is referred to Country, and we bring you a huge amount of Country tracks absolutely for free. And finally, we have collected lyrics for this track and you can view it here as well. So feel free to browse, listen, download ringtones at Audiko.net. Make your phone sound cool!
Taylor Swift - Our Song
Similar Ringtones
Browse Genres
Albums by Taylor Swift
We Are Never Ever Getting Back Together
Taylor Swift
14 Aug 2012
Taylor Swift
18 Oct 2010
Top ringtones by Taylor Swift
- Taylor Swift - Wildest Dreams
- Taylor Swift - Bad Blood
- Taylor Swift - Blank Space
- Taylor Swift - Shake It Off
- Taylor Swift - Style
- Taylor Swift - I Knew You Were Trouble
- Taylor Swift - Bad Blood (feat. Kendrick Lamar)
- Taylor Swift - Love Story
- Taylor Swift - Taylor Swift - Wildest Dreams
- Taylor Swift - Clean
New ringtones
- Unknown - 100_kila_feat_dj_diamondz_-_аз_съм_6_official_hd_video_
- BANUS - lynyrd-skynyrd-free-bird372484
- Hacienda - Quizás quieres saber
- Breaking Bad - Lydia
- ring - New Ringtone 1
- tragedie - Tragedie - OH
- Nico & Vinz - Am I Wrong
- Sam Feldt - Show Me Love [feat. Kimberly Anne]
- tragedie - OH
- Zanon SHK - Ale Valencia

subset: commoncrawl


text:
- To Revoke or Not: Colleges That Gave Cosby Honors Face a Tough Question
- Review: 'American Horror Story: Hotel,' as Depraved as Ever
- Review: 'SuperMansion' Stars Blundering Stop-Motion Superheroes
- Disney's Family Channel Aims Younger Than Millennials With New Name
- Review: Hulu's 'Casual' Mixes Sex and Family Drama
Let Freedom Hum: An Evening of Comedy Hosted by Martin Short
TV SpecialAlternate Title: Very Funny Festival, Just for Laughs
More in Television
TV Highlights
What's On This Week
A daily updated summary of the week in TV.
Program Overview
Executive Producers: Gilbert Rozon, Bruce Hills, Troy Miller, Tracey Baird
Genre: Comedy
Genre: Comedy
Program Synopsis
Comedy special hosted by Martin Short as part of the 'Very Funny' Just for Laughs comedy festival.
What's On Tonight
- Chantal Akerman, Whose Films Examined Women's Inner Lives, Dies at 65
- To Revoke or Not: Colleges That Gave Cosby Honors Face a Tough Question
- Olga Hirshhorn, Collector of Modern Art, Dies at 95
- ArtsBeat: Discoveries Clear the Mists From the Original 'Swan Lake'
- Jerry Lewis Holds Sway at the Friars Club
- Damien Hirst: From Artist to Curator
- Plan to Revive New York City Opera Has Creditors' Backing
- Vigée Le Brun: A Delayed Tribute to a French Trailblazer
- ArtsBeat: Dmitri Hvorostovsky, Being Treated for Brain Tumor, Sends Love to Fans
- Broadway Siblings


text:
updated 03/05/2014 AT 7:00 PM ET
•originally published 03/05/2014 AT 7:30 PM ET
Prince showed that he had a sense of humor when he guested on New Girl last month.
But when PEOPLE went backstage to watch him on The Arsenio Hall Show, in an episode airing Wednesday night, we learned a whole lot more about the Purple One.
Clad in bell-bottoms, a long black fur vest, gold chains and a tame '70s afro, the famously private star took over the show as only he could.
Over the two hours of taping on Tuesday night, Prince performed three songs – his new single "FunkNRoll," "She's Always in My Hair" and "Mutiny" – chatted on the couch with Hall, and later sat with the audience to take questions from his fans, some of whom had been waiting outside the studio for more than six hours to see him.
Here's five things we learned about His Royal Badness.
1. He doesn't own a cell phone
Hall told the audience that Prince was one of the first people who called him when the news broke that he was returning to late night, but he wasn't sure how the call was even made because the pop star doesn't have a cell phone. Prince quickly clarified, saying, "Everybody I know has one."
2. If he wasn't singing he would be a teacher
Prince revealed that when he was 16 he was broke and went on a mission to find an alternate career. "I got the Yellow Pages out and I didn't find anything I wanted to do, so I decided I was going to become a musician and win at it," he said. But if he absolutely had to choose a different calling, he'd "want to teach in some capacity."


text:
Find dealers
New and used car dealers in Portsmouth
Find below new and used car dealers in Portsmouth currently advertising their vehicles on Auto Trader.
With the widest coverage of the UK territory, Auto Trader is proud to provide you with the best choice to find the right dealer.
Car dealerships in Portsmouth
Showing 1 - 10 of 40 results
Guy Salmon Land Rover PortsmouthCompass Road, North HarbourPortsmouthPO6 4SJ
(0843) 3098549
Porsche Centre PortsmouthLakeside Business Park Western RoadPortsmouthPO3 5FH
(023) 92809518
Evans Halshaw Vauxhall PortsmouthNorway RoadPortsmouthPO2 9QZ
(023) 92627503
Porsche PortsmouthLakeside Business Park Western RoadPortsmouthPO3 5FH
(023) 92809513
Snows Seat PortsmouthBilton WayAirport Service RoadPortsmouthPO3 5FE
(023) 9211 9806
Seward RenaultBilton Motor ParkBilton WayPO3 5FH
(023) 9211 9793
Meridien Milano Abarth111 Havant RoadDraytonPortsmouthPO6 2AH
(023) 9211 9875
Copnor Road Car Sales255 - 257 Copnor RoadPortsmouthPO3 5EE
(023) 92652221
Walker Car Sales Retail Ltd382 LONDON ROADNorth EndPO2 9JY
(023) 9211 9878
Portsmouth Car CompanyLondon RoadHilseaPortsmouthPO2 9RR
(023) 9211 9879
Not found what you're looking for?
Looking for another Town in Hampshire?
- Car dealers in Aldershot
- Car dealers in Andover
- Car dealers in Basingstoke
- Car dealers in Eastleigh
- Car dealers in Fareham
- Car dealers in Farnborough
- Car dealers in Fleet
- Car dealers in Hook
- Car dealers in Lymington
- Car dealers in Portsmouth
- Car dealers in Ringwood
- Car dealers in Romsey
- Car dealers in Southampton
- Car dealers in Waterlooville
- Car dealers in Winchester
Town not listed above? You can also browse our full list of all towns in Hampshire.


text:
6th Annual SISU Ski Fest proved that SISU is more than a name. After a 1.5 hour delay in the start, temps were still hovering around zero ! Thanks to all that Participated!
"Finnish" in downtown Ironwood. Ski through historic mining areas, scenic bluffs, along the Montreal River and by the World's Tallest Native American Statue. Commemorative SISU souvenirs for the first 500 42K and 21K racers to sign up! Locally crafted age group awards. Traditional "Yooper" fare.
The 6th Annual SISU Ski Fest drew 742 entries that braved the COLD proving that they have SISU!
Continued for 2016 - SISU COMBINED!!
Do You Have SISU? Ski on Saturday and Snowshoe on Sunday!
Race the SISU Full Combined: 42K SISU ski marathon plus 10K SISU snowshoe race—or the SISU Half Combined: 21K Heikki Lunta plus the 5K snowshoe race. The top male and female in each event will win a SISU Combined trophy and prize package. The fastest combined time of the two races will be used to determine the winner.
SISU Combined Prize Package for the winning female and male for the Full and Half SISU Combined will win Free entry for 2017 SISU Combined (a ski entry and a snowshoe entry!), custom crafted award and a 2016 SISU shirt. An additional entry fee of $10 will be changed ($5 added to each individual event fee)
LOST AND FOUND--We found some items! Contact us at firstname.lastname@example.com and give a description of what you are missing, a return address and a phone number. We'll do our best to reunite you and your lost item.
Race Results All race results


text:
Registration takes less than 1 minute.
Data from BlueWater Reporting illustrates how the termination of the ME5 service will decrease the Danish carrier's weekly deployed capacity from the Mediterranean to the Middle East by 12.2 percent.
Ocean carriers Maersk Line, CMA CGM and NileDutch announced general rate increases.
Ocean carriers Maersk Line, CMA CGM and Hapag-Lloyd announced general rate increases.
No sighting of lifeboat yet as multiple aircraft and ships search the area for TOTE Maritime Puerto Rico ship and crew.
Rep. Stephen Fincher, R-Tenn., introduced a bill that would restore Ex-Im Bank's operations and include various reforms, but will require a "discharge process" to reach the House floor for a vote.
The company's minority investment in e-commerce specialist Ally Commerce Inc. is more about research than revenues, according to Rimas Kapeskas, head of UPS's strategic enterprise fund.


text:
Clinical Insight Newswire
Comprehensive Real-Time News Feed for Clinical Insight.
Results 1 - 20 of 89 in Clinical Insight
UnitedHealth plans to hire 1,700 in Twin Cities
The Minnetonka-based health insurer on Monday also announced openings for 140 customer service representatives in Duluth and for more than 1,000 jobs that could be filled by people working from home anywhere in the country. The Star Tribune reports as of June 30, nearly 41.8 million people in the U.S. had medical insurance from UnitedHealthcare, up about 4 percent from a year earlier. Comment?
UnitedHealth Group is big on getting skinny w/Photo
Seth Tuckerman, Real Appeal's chief executive, said the program "is about more than just losing weight, it's about feeling great and having fun." UnitedHealth is offering the program this month. Comment?
Mark Farrah Associates Assessed First Quarter 2015 Performance of Leading Health Plans
Mark Farrah Associates , www.markfarrah.com , assessed first quarter 2015 enrollment and profitability for Aetna, Cigna, Health Care Service Corporation , Humana, Kaiser Permanente, UnitedHealth Group and Anthem. MFA reported in its latest Healthcare Business Strategy brief that all of the seven U.S. leading health plans realized net gains in the total number enrolled in Commercial, Medicare and Medicaid plans from first quarter 2014 to first quarter 2015. Comment?
Traders work on the floor of the New York Stock Exchange w/Photo
The 10 stocks absolutely crashing the Dow The market's pain is being especially hurt by specific stocks Check out this story on pressconnects.com: http://usat.ly/1Jg0WGL Aug. 24 -- Bloomberg's Julie Hyman examines the markets at the start of today's trade. She speaks on "Market Makers." Comment?
The 6 stocks absolutely crashing the Dow w/Photo
The 6 stocks absolutely crashing the Dow The market's pain is being especially hurt by specific stocks Check out this story on USATODAY.com: http://usat.ly/1Jg0WGL Aug. 24 -- Bloomberg's Julie Hyman examines the markets at the start of today's trade. She speaks on "Market Makers." Comment?
Innovating Big Within Big Business - Healthcare Innovation with UHG
We asked Tina Wallman, Entrepreneur in Residence for UnitedHealth Group's Innovation R&D group to write a guest post with her perspective on the space: Last year, UnitedHealth Group's Innovation and R&D Group embarked on a journey with Pathfinder Software to find out if the lessons of lean startup can be applied at a $100 Billion company in a highly regulated industry. In big business, innovation often encounters unique obstacles and challenges, but UnitedHealth is working to create a culture of innovation for its employees. Comment?
The deals, small and large, just kept on coming in the first half of 2015 w/Photo
John Hammett, center, managing director of Corporate Finance Associates, helped find a buyer for Trissential, the Wayzata firm founded by Keith Korsi, left, and Mike Vinje. "A few friends and neighbors and I went through four chain saws," he reported from his summer home in Crow Wing County. Comment?
Anthem to buy Cigna for $54.2 billion w/Photo
Anthem is buying Cigna for $54.2 billion, a deal that will create the nation's largest health insurer by enrollment. Minnetonka-based UnitedHealth Group Inc. would still be the largest insurer by revenue . Comment?
Press release distribution, EDGAR filing, XBRL, regulatory filings
Note: This NAV was computed today, 23 July 2015, based on estimated prices for underlying ... )--Fitch Ratings has affirmed Valero Energy Corporation's ratings as follows: --Issuer Default Rating at 'BBB'; --Unsecured credit facility at 'BBB'... )--FUND db x-trackers CNX Nifty UCITS ETF DEALING DATE 22-Jul-15 NAV PER SHARE USD137.8173 NUMBER OF SHARES IN ISSUE 1,956,047 CODE )--FUND db x-trackers MSCI EM EMEA Index UCITS ETF DEALING DATE 22-Jul-15 NAV PER SHARE USD28.3000 NUMBER OF SHARES IN ISSUE 2,366,709 CODE )--Research and Markets has announced the addition of the "Malawi's Mining Fiscal Regime: H1 2015" report to... )--VOX Network Solutions, Inc., a leading provider of technology and services for enterprise businesses announced that its cloud-based NuStratus portfolio will offer... )--Research and Markets has announced the addition of the "Governance, Risk and Compliance - The ... (more) Comment?
A.M. Best Assigns Issue Ratings to UnitedHealth Group Incorporateda s New Senior Unsecured Notes
The outlook assigned to all ratings is stable. The existing ratings of UnitedHealth and its subsidiaries are unchanged. Comment?
S&P Dow Jones Indices Announces Changes to the S&P/TSX Canadian Indices
The shares of Catamaran will be acquired by UnitedHealth in exchange for cash for each share. The shares of Catamaran will be removed from the S&P/TSX Composite, Capped Composite and Composite Equal Weight, the S&P/TSX 60, 60 Capped, 60 ESG and 60 Equal Weight and the S&P/TSX Capped Health Care Indices after the close of trading on . Comment?
UnitedHealth sells bonds worth $10.5 billion to fund Catamaran deal w/Photo
UnitedHealth Group took center stage in the bond markets on Monday by selling $10.5 billion in bonds that attracted more than $40 billion in orders. Minnetonka-based UnitedHealth plans to use the proceeds to help pay for its $12.8 billion purchase of pharmacy benefit manager Catamaran Corp., which was announced in March. Comment?
Why Catamaran Acquisition Is Cheap And What Does That Mean For UnitedHealth Group Stock? w/Photo
UnitedHealth Group Inc. announced its second quarter fiscal 2015 results on Thursday morning. During the earnings release, the management updated fiscal 2015 guidance to accommodate Catamaran Corp's contribution to the company financials. Comment?
Wall Street rises as eBay, Netflix push Nasdaq to record high w/Photo
Wall Street ended stronger Thursday, with the Nasdaq up more than 1 percent at a record high after earnings reports from eBay and Netflix boosted optimism. Sentiment was also bolstered after the Greek parliament voted in favor of austerity measures. Comment?
UnitedHealth Beats Views, Sits Pretty As Rivals Merge
The largest U.S. health insurer, which was mostly mum on M&A in its conference call, said Q2 earnings grew 15.5% to $1.64 a share, 6 cents above Street views. Revenue notched up 11% to $36.26 billion, exceeding expectations for $35.66 billion. Comment?
UnitedHealth Ups '15 Outlook w/Photo
Revenue grew 11% to $36.26 bil vs. forecasts for $35.66 bil. now sees '15 EPS at $6.25-$6.35, up from $6.15-$6.30, and bumped revenue outlook to $154 bil, including its soon-to-close Comment?
Us Stocks-Wall St rises; eBay, Netflix push Nasdaq to record high
Wall Street ended stronger on Thursday, with the Nasdaq up more than 1 percent at a record high after earnings reports from eBay and Netflix boosted optimism. Sentiment was also bolstered after the Greek parliament voted in favor of austerity measures. Comment?
UnitedHealth tops Street 2Q forecasts, raises forecasts w/Photo
UnitedHealth continued to juice up its business outside health insurance in a better-than-expected second quarter while rivals scrambled to add enrollment in a wave of mega-mergers sweeping the sector. The nation's largest health insurer said Thursday that operating earnings climbed about 19 percent to $864 million for its Optum business segment, which provides pharmacy benefits management and technology services. Comment?
Us Stocks-Wall St gains as bellwethers post strong earnings reports
Wall Street rose sharply on Thursday, with the Nasdaq touching a three-week high and the S&P 500 less than 1 percent from its record high, as bellwether companies such as Citigroup, eBay and Netflix reported strong results. However, dour reports from Goldman Sachs and UnitedHealth capped gains on the Dow. Comment?
Is UnitedHealth Group Inc. (UNH) Destined To Rise Following Earnings Beat Dip?
In its financial results for the second quarter, UnitedHealth Group Inc. managed to beat estimates for both the top and bottom lines. The $116.72 billion healthcare company reported EPS of $1.64 and revenues of $36.26 billion. Comment?
Copyright © 2015 Topix LLC


text:
Victoriia and her boyfriend enjoyed their previous stay with us so they decided return. Since they were already familiar with the particulars of the Mikey special they immediately signed the lease and proceeded with the payment. Victoriia sensually stripped down to her to her sexy underwear and then invited her man to taste her pretty pussy. He sucked on her nicely manicured toes and then worked his way to her bald beaver. After smearing pussy juice all over her man's face, Victoriia wrapped her lips around his hard cock and gave him an amazing blow job. She then took his schlong for ride and had the pleasure of experiencing multiple orgasms. She eventually swallowed her man's load without spilling a single drop.
"Moist Exposure"
Michelle Moist
"Marry Me"
Marry Queen
"Perfect Anissa"
Anissa Kate
"Jizzed Treatment"
"Flexing Lana"
Lana Feaver
"Kittys Puss"
Kitty Cat
"Trouble Digger"
Mira Sunset
"Banging Queen"
Kira Queen
"Sweet Buns"
Vanda Lust
"Natural Juggs"
Alice Romain


text:
Amazon Price
|New from
|Used from
Kindle Edition
"Please retry"
No Kindle device required. Download one of the Free Kindle apps to start reading Kindle books on your smartphone, tablet and computer.
To get the free app, enter your e-mail address or mobile phone number.
Product details
Would you like to update product info or give feedback on images?
The ultimate companion for Photoshop CS6 and its stunning new features. (Advanced Photoshop, July 2012)
This is a book you will use on a regular basis...a well recommended reference book. (Burton Mail, February 2013)
Get the most out of Photoshop CS6
Explore new features such as the dark ui
Retouch photos, create 3d images, and more
Create stunning, eye–catching images like a Photoshop pro
Get ready to unlock the power of Photoshop and achieve amazing results with your images. From editing basics to techniques for working with camera raw images, this top–selling book will show you how to master every aspect of Photoshop CS6. You′ll gain the skills to retouch, color, correct, and manipulate your files and then dive into creating cutting–edge special effects using the latest features and enhancements. Everything you need to become a Photoshop master is covered in these pages.
Explore camera raw basics, selections, layers, and channels
Adjust lighting, color, and sharpness to bring new life to images
Work with paths, shapes, and text
Apply filters to incorporate brush strokes, pixilation, sketches, and more
Build and manipulate 3D objects, scenes, and settings
Add artistic effects to video files
Create images for the Web and mobile devices
Companion Website
The companion website includes project files for the book′s tutorials. www.wiley.com/go/photoshopcs6bible
Enhance color in Camera Raw
Edit and paint with brushes
Use the Blur gallery to refocus your imageSee all Product Description
Excellent. Comprehensive, practical but perhaps just a bit too much of the American childishness about it for my preference. Read morePublished 12 months ago by Avery
This book is concise and relevant to users of Photoshop. It is fairly easy to use and is very in-depth.Published 20 months ago by email@example.com
I thought I knew quite a lot about PS CS6 untill I read this book, Not only a great book to learn from but also a great tool to have next to youPublished on 16 May 2013 by bromber
Bought as a present,seems very good.I believe this will be a great help to the person I bought it for.Published on 24 Dec. 2012 by Sandra D Barlow


text:
Holiday Inn Express Deforest
No prices found through our partners. Please contact the business directly or check some of our recommended alternatives.
How has this hotel rated in the past?
- Continental Breakfast
- Drycleaning onsite
- Meeting rooms/conference facilities
- High-speed internet in room
- Heated pool
- Breakfast Available
Travelers also recommend:
- More recommendations
TripAdvisor Reviews Holiday Inn Express Deforest De Forest
Travel Blogs from De Forest
Last Day
... front of the tires and attach to the motorhome by little tabs. A whole lot easier to put on, we just have to mark them so we know which one goes on which tire. Next we purchased a new system to check the levels in our tanks (fresh water, black & gray) and the battery. It is a system which attaches to the outside of the tank so the waste will not mess up the sensors. Now instead of the tanks showing 1/3, 2/3 and full, it ...
Fun & Informative
... return home, we sat outside and talked a bit with the folks we're parked beside.
This morning we woke up and decided we both needed showers, but since we don't have a lot of water, we decided to take advantage of the showers here. So we packed up what we needed and drove over to the showers. Surprisingly, they are very clean and have good pressure. So that is how we started our day. Bob wanted to see how much gas we have used so far so we turned off ...
Green Wisconsin
... is so high it is not comfortable to sit out. What a shame. Tomorrow we are driving to Milwaukee so hope we will have interesting things to post tomorrow. Our first look at Lake Michigan. We will see this lake a few more times on this trip. Our drive down from Oakdale was beautiful yesterday. The pictures I am posting reflect the countryside.
Marvellous Madison
... senate, the governor's office, a hearing room and a court chamber. Each area was different and styled differently as well with the senate having a mural depicting the opening of the Panama Canal, the governor's office modelled after an Italian palace and the hearing room had paintings of different eras of transportation because it was used for railway hearings. It wasn't all peaceful though as around the rotunda were some artwork depicting atrocities by the Communist ...
Across the Mississippi River
... know. And Wisconsin could boast about the same, I think. Or maybe their lakes are just bigger. Unlike where we live, Las Vegas, LA, etc, it's not just where you water or irrigate that is green. It is so green they have to fight it and I wonder if we have gone too far with moving the water to where people are instead of people moving to where the water is. Hmmm.
I am amazed at the amount of lawn mowing. It must be the ride-on lawn ...


text:
Search the Collection
Sitter in 2 portraits
by Thomas Richard Williams
by Camille Silvy
Sir Richard Paul Amphlett(1809-1883), Judge
Sitter in 2 portraits
by Thomas Richard Williams
albumen carte-de-visite, 1860s
NPG Ax39743
by Camille Silvy
albumen print, 1 August 1862
NPG Ax60743
Tell us moreback to top
Can you tell us more about this person? Spotted an error, something missing, or do you know anything that we don't know? If you have any information to share please complete the form below


text:
hey everyone just stuck between these two bars and want to know which one is going to be better for me. Right now im riding a 640mm truativ handlebar with a 45mm rise i believe. I ride pretty much everything and want to know which bar the Sunline v1 or the Answer Pro Tape will i enjoy more? also of the two which one is stiffer?
the sunline bar is 745mm with a 38mm rise and the Answer pro taper is 780 mm with a 1inch rise. both are same price as well!!!
Results 1 to 13 of 13
Similar Threads
Interbike Featured Booths
Check out hottest mountain bike products from these brands!
See All Interbike Coverage - Click Here »
Hot Deals See All Hot Deals >>
Latest Mountain Bike Articles