text:
|Publication number
|Publication type
|Application number
|Publication date
|Jan 6, 2004
|Filing date
|Nov 7, 2001
|Priority date
|Dec 3, 1999
|Fee status
|Also published as
|Publication number
|John Forster, Praburam Gopalraja, Bradley O. Stimson, Liubo Hong
|Original Assignee
|Applied Materials, Inc.
|Export Citation
|BiBTeX, EndNote, RefMan
|Patent Citations (52), Non-Patent Citations (25), Referenced by (23), Classifications (24), Legal Events (4)
|External Links: USPTO, USPTO Assignment, Espacenet
This a continuation of co-pending application(s) Ser. No. 09/454,355 filed on Dec. 3, 1999 now U.S. Pat. No. 6,344,419.
1. Field of the Invention
The present invention relates to an apparatus and method for processing substrates. Specifically, the invention relates to a method for depositing a conformal layer of material on a substrate in an ionized metal plasma process.
2. Background of the Related Art
Sub-quarter micron multi-level metallization represents one of the key technologies for the next generation of ultra large-scale integration (ULSI) for integrated circuits (IC). In the fabrication of semiconductor and other electronic devices, directionality of particles being deposited on a substrate is important to improve adequate in filling of electric features. As circuit densities increase, the widths of vias, contacts and other features, as well as the dielectric materials between them, decrease to 0.25 μm or less, whereas the thickness of the dielectric layer remains substantially constant. Thus, the aspect ratios for the features, i.e., the ratio of the depth to the minimum lateral dimension, increases, thereby pushing the aspect ratios of the contacts and vias to 5:1 and above. As the dimensions of the features decrease, it becomes even more important to directionally orient the flux of deposition material reaching the substrate in order to achieve conformal coverage of the feature sidewalls and bottoms.
Conventionally, physical vapor deposition (PVD) systems have been used to deposit materials in device features formed on a substrate. PVD systems are well known in the field of semiconductor processing for forming metal films. Generally, a power supply connected to a processing chamber creates an electrical potential between a target and a substrate support member within the chamber and generates a plasma of a processing gas in the region between the target and substrate support member. Ions from the plasma bombard the negatively biased target and sputter material from the target which then deposits onto a substrate positioned on the substrate support member. However, while such processes have achieved good results for lower aspect ratios, conformal coverage becomes difficult to achieve with increasing aspect ratios. In particular, it has been shown that coverage (i.e., deposited film thickness) of the bottoms of the vias decreases with increasing aspect ratios.
One process capable of providing greater directionality to particles is ionized metal plasma-physical vapor deposition (IMP-PVD), also known as high density physical vapor deposition (HDP-PVD). Initially, a plasma is generated by introducing a gas, such as helium or argon, into the chamber and then coupling energy into the chamber via a biased target to ionize the gas. A coil positioned proximate the processing region of the chamber produces an electromagnetic field which induces currents in the plasma resulting in an inductively-coupled medium/high density plasma between a target and a susceptor on which a substrate is placed for processing. The ions and electrons in the plasma are accelerated toward the target by a bias applied to the target causing the sputtering of material from the target by momentum transfer. A portion of the sputtered metal flux is then ionized by the plasma to produce metal ions in the case where the target comprises a metal. An electric field due to an applied or self-bias develops in the boundary layer, or sheath, between the plasma and the substrate that accelerates the metal ions towards the substrate in a vector parallel to the electric field and perpendicular to the substrate surface. The bias energy is preferably controlled by the application of power, such as RF or DC power, to the susceptor to attract the sputtered target ions in a highly directionalized manner to the surface of the substrate to fill the features formed on the substrate.
One of the problems with HDP-PVD processes is the inability to achieve conformal step coverage in the increasingly smaller device features. Conformal coverage of the bottom and sidewalls of the features is needed to optimize subsequent processes such as electroplating. Electroplating requires conformal barrier and seed layers within the device features in order to ensure uniform filling of the feature. While conventional HDP-PVD achieves good bottom coverage due to the directionality of the ions provided by the bias on the substrate, the sidewall coverage can be less than conformal. This result is caused in part by the induced high directionality of ions towards the bottom of the features with little directionality toward the sidewalls.
The effects of a bias on a substrate can be described with reference to FIGS. 1-2 which illustrate the direction of metal ions 14 entering a via 16 formed on a substrate 10. FIG. 1 illustrates a traditional, i.e., non-HDP, PVD processing environment wherein no bias is supplied to the substrate 10 by an external power generator. In this configuration, the directionality of the ions 14 is determined primarily by the ejection profile of material (usually atoms) from the target and by the inelastic collisions with other particles in the chamber, such as Ar ions which are provided in a plasma. The angular distribution 22 of the ions 14 in FIG. 1 typically results in little deposition on the bottom 18 of the via 16 and an increasingly thinner sidewall thickness as the feature bottom 18 is approached due to a large proportion of the ions 14 striking the substrate 10 at oblique angles.
FIG. 2 illustrates the processing environment in a HDP-PVD process wherein the angular distribution of the ions 14 is influenced by the electrical field E due to an applied or a self-bias at the surface of the substrate. The electric field E is oriented perpendicular to the substrate 10 and the positively charged ions 14 travel along a trajectory parallel to the electric field E toward the bottom 18 of the via 16. The angular distribution 24 of the ions 14 in FIG. 2 typically results in moderate to low deposition on the sidewalls 20 and high to moderate deposition on the bottom 18 than is possible without the bias. As compared to the angular distribution 22 of FIG. 1, the distribution 24 exhibits a tighter pattern indicating more directionality parallel to the electric field E.
Where the electric field E due to the applied bias on the substrate 10 is sufficiently strong, faceting and/or substantial resputtering can occur. Faceting refers to a phenomenon whereby the corners of features is partially etched by charged particles which may include ions from the plasma gas. Faceting can be undesirable because deformations of the device geometry can negatively affect subsequent processes such as electroplating. Additionally, faceting can lead to restricted feature openings and eventually to the formation of voids. Resputtering refers to the removal of deposited material from the substrate by the action of the impinging ions. Resputtering can be undesirable because of the potential for overhangs, i.e., relatively thicker portions of material near the opening of the features. Under the influence of the bias, the charged particles can gain enough kinetic energy to re-sputter a portion of the deposited material. In particular, the material is re-sputtered from the edges of the device features, such as vias, and from the fields of the substrate, which are the upper planar areas of the substrate formed between the features. The re-sputtered material then re-deposits on other areas of the substrate. While some degree of resputtering can be desirable, a problem arises when the re-sputtered material is non-uniformly re-deposited on other portions of the device features resulting in non-uniform device geometries.
The results of the resputtering are illustrated by FIGS. 3 and 4. FIG. 3 is a cross section of a via 30 formed in a substrate 32 having a layer 34 formed thereon, which may be a barrier layer or a seed layer for example. Conventional PVD and HDP-PVD processes produce overhangs 36 which restrict the via 30. The overhangs 36 are shown as portions of the deposited layer 34 at the upper end of the via 30 which are relatively thicker compared to the other portions of the layer 34 due to greater deposition at those locations on the via 30. During continued deposition, the overhangs 36 bridge the entry to the via 30 and a void 38 is formed, as shown in FIG. 4, which leads to defective devices. Void formation is also a problem resulting from faceting because the etched material can redeposit to restrict the feature opening.
Therefore, there is a need to provide a technique for depositing a layer conformally over the surface of features, particularly sub-half micron and higher aspect ratio features.
The present invention generally provides an apparatus and method for depositing a conformal layer on device features in a plasma chamber using sputtered ionized material. In one embodiment, a chamber having a target, a substrate support member and a magnetic field generator to ionize the target material is provided. The target comprises the material to be sputtered by a plasma formed adjacent to the target during processing. The magnetic field generator may be one or more single-turn or multi-turn coils adapted to ionize the sputtered material. The invention provides methods and apparatus adapted to affect the angular distribution of ions present in the chamber.
In one aspect of the invention, a modulated signal is provided to the support member during processing. Preferably, the modulated signal includes a negative voltage portion and a zero voltage portion. In one embodiment, the waveform of the signal may be modulated.
In another aspect of the invention, modulated signals are provided to the target and the support member. Preferably, the modulated signal supplied to the support member includes a negative voltage portion and a zero voltage portion. In one embodiment, the modulated signal to the target is pulsed between a negative voltage portion and a zero voltage portion. In one embodiment, the waveform of the signals may be modulated.
So that the manner in which the above recited features, advantages and objects of the present invention are attained and can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to the embodiments thereof which are illustrated in the appended drawings.
It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.
FIG. 1 is a cross section of a substrate having a via formed therein and illustrates a cosine distribution.
FIG. 2 is a cross section of a substrate having a via formed therein and illustrates an over-cosine distribution.
FIG. 3 is a cross section of a substrate illustrating the formation of overhangs.
FIG. 4 is a cross section of a substrate illustrating the formation of a void.
FIG. 5 is a cross section of a simplified processing chamber of the invention using a coil.
FIG. 6 is a schematic illustration of a controller used to control the processing system shown in FIG. 5.
FIG. 7 is a graphical illustration of a pulsed output signal from a waveform generator.
FIG. 8 is a graphical illustration of a pulsed output signal from an RF power supply coupled to the waveform generator.
FIG. 9 is a graphical illustration of a pulsed bias waveform on a substrate.
FIG. 10 is a graphical illustration of a pulsed induced voltage waveform on the substrate.
FIG. 11 is a graphical illustration of a constant voltage signal to a target.
FIG. 12 is a cross section of a substrate having a via formed therein and illustrates an over-cosine distribution as a result of modulating a signal to the substrate.
FIG. 13 is a cross section of a substrate having a via formed therein and illustrates a cosine distribution as a result of modulating a signal to the substrate.
FIGS. 14A-D are a series of cross sectional views of a substrate having a via formed therein and illustrates the effects of signal modulation on deposition in the via.
FIG. 15 is a graphical illustration of a pulsed signal to a target.
FIG. 16 is a graphical illustration of a pulsed induced voltage waveform on a substrate.
FIG. 17 is a cross section of a substrate having a via formed therein and illustrates a cosine distribution as a result of modulating a signal to the substrate.
FIG. 18 is a cross section of a substrate having a via formed therein and illustrates an over-cosine distribution as a result of modulating a signal to the substrate.
FIGS. 19A-D are a series of cross sectional views of a substrate having a via formed therein and illustrates the effects of signal modulation on deposition in the via.
FIGS. 20-22 illustrate varying waveforms output from a signal source to a support member.
The embodiments described below preferably use a modified ionized metal plasma (IMP) process that can be carried out using process equipment, such as an Endura� platform, available from Applied Materials, Inc., located in Santa Clara, Calif. with modifications as described below. The equipment preferably includes an integrated platform having a preclean chamber, an IMP-PVD barrier layer chamber, a PVD chamber, an IMP-PVD seed layer chamber, and a CVD chamber. One ion metal plasma (IMP) processing chamber, known as an IMP VECTRA™ chamber is available from Applied Materials, Inc., of Santa Clara, Calif.
FIG. 5 is a schematic cross-sectional view of an IMP chamber 100 according to the present invention. The chamber 100 includes walls 101, lid 102, and bottom 103. A target 104 comprising the material to be sputtered is mounted to the lid 102 and disposed in the chamber 100 to define an upper boundary to a processing region 107. Magnets 106 are disposed behind the lid 102 and are part of a rotatable magnetron which trap electrons during operation and increase the density of a plasma adjacent to the target 104.
A substrate support member 112 is movably disposed in the chamber 100 and in a raised processing position defines the lower boundary to the processing region 107. The substrate support member 112 provides an upper support surface 105 for supporting a substrate 110. Lift fingers 120 are vertically movably disposed in the substrate support 112 to assist in positioning the substrate onto the upper surface 105. Actuation of the lift fingers 120 is enabled by an elevator plate 116 and actuator 118. The support member 112 is mounted on a stem 109 connected to a motor assembly 114 that raises and lowers the substrate support 112 between a lowered loading/unloading position and the raised processing position. An opening 108 in the chamber 100 provides access for a robot (not shown) to deliver and retrieve substrates 110 to and from the chamber 100 while the substrate support member 112 is in the lowered loading/unloading position.
A coil 122 is mounted in the chamber 100 between the substrate support member 112 and the target 104 and provides magnetic fields in the chamber 100 during processing to assist in generating and maintaining a plasma between the target 104 and substrate 110. The magnetic fields produced by the coil 122 induce currents in the plasma to produce a denser plasma which, in turn, ionizes the material sputtered from the target 104. At least a portion of the ionized material is then deposited on the substrate 110.
The chamber 100 includes a process kit comprising a process shield 128 and a shadow ring 129. The process shield 128 is annular member suspended from the lid 102 between the coil 122 and the body 101. An upwardly turned wall 131 of the process shield 128 is adapted to support the shadow ring 129 while the support member 112 is in a lowered position. To provide a return path for RF currents in the chamber 100 the process shield is preferably coupled to ground.
One or more plasma gases are supplied to the chamber 100 through a gas inlet 136 from gas sources 138, 140 as metered by respective mass flow controllers 142, 144. A vacuum system 146 is connected to the chamber 100 at an exhaust port 148 to exhaust the chamber 100 and maintain the desired pressure in the chamber 100. Preferably, the vacuum system 146 includes a cryopump and a roughing pump and is capable of sustaining a base pressure of about 10−8 mTorr.
Multiple signal generators/power supplies are used in the chamber 100. A first signal generator 150 coupled to the target 104 provides a signal thereto. Preferably, the first signal generator 150 includes a power supply 130 and a waveform modulator 152. While the power supply 130 is preferably a DC power supply, in another embodiment an RF power supply may be used. Optionally, current from the power supply 130 to the target 104 is controlled by a switch 154. A second signal generator 156 provides a modulated signal, preferably RF or DC, to the substrate support member 112 to bias the substrate 110 disposed thereon during processing. The second signal generator 156 preferably includes a power supply 134, shown here as an RF power source, and a waveform modulator 158. Optionally, current from the power supply 134 to the target 104 is controlled by a switch 160. Both waveform modulators 152 and 158 include circuitry adapted for the modulation of the waveform, frequency and amplitude of output signals. A third power supply 132 supplies electrical power in the megahertz range to the coil 122 to increase the density of the plasma.
The operation of the chamber 100 and the various related components are preferably controlled by a controller 149. In particular, the controller 149 generates signals that control the operation of both signal generators 150, 156 as required to perform the processes of the invention described below. A schematic representation of the controller is shown in FIG. 6. The controller 149 comprises a bus line 260 coupling a central processing unit (CPU) 250, a memory 252, and support circuits 254 for the CPU 250. The CPU 250 may be any general purpose computer processor that can be used in an industrial setting for controlling various chambers and subprocessors. The support circuits 254 are coupled to the CPU 250 for supporting the processor in a conventional manner. These circuits include cache, power supplies, clock circuits, input/output circuitry and subsystems, and the like. The memory 252, or computer-readable medium, is coupled to the CPU 250 and may be one or more of readily available memory such as random access memory (RAM), read only memory (ROM), floppy disk drive, hard disk, or any other form of digital storage, local or remote. A deposition process is generally stored in the memory 252, typically as a software routine 256, or program product. The software routine 256 may also be stored and/or executed by a second CPU (not shown) that is remotely located from the hardware being controlled by the CPU 250. The software routine 256 includes multiple subroutines 258 each of which are adapted to perform the various operations described below.
In operation, a robot delivers a substrate 110 to the chamber 100 through the opening 108. Positioning of the substrate 110 onto the upper surface 105 is accomplished by raising the lift fingers 120, using the actuator 118 and elevator plate 116, to contact the lower surface of the substrate 110. The substrate support 112 is then raised while holding the lift fingers 120 in place, thereby causing the substrate 110 to be lowered onto the upper surface 105. After depositing the substrate 110 unto the upper surface 105 of the support member 112 the robot retracts from the chamber 100 and the opening 108 is sealed. The substrate support member 112 then raises the substrate 110 into a processing position. During the upward movement of the support member 112 the shadow ring 129 is lifted from the process shield 128. During processing, the shadow ring 129 covers a perimeter portion (a few millimeters) of the substrate 110. Preferably, the distance between the target 104 and the substrate support member 112 in a raised processing position is about 90-160 mm for a 200 mm chamber operating between about 10 mTorr and 70 mTorr. One or more plasma gases are then introduced into the chamber 100 from the gas sources 138, 140 to stabilize the chamber 100 at a processing pressure. The magnets 106, which comprises components of a magnetron, then facilitate the formation of a plasma adjacent the target 104 and the first signal generator 150 provides a bias which attracts the charged particles of the plasma toward the target 104 to cause sputtering therefrom. The coil 122 is energized by the third signal generator 132 and operates to increase the density of the plasma, thereby facilitating ionization of sputtered target material. A portion of the ions formed from the sputtered target material continue to traverse the processing region 107 between the target 104 and the support member 112 and deposit on the substrate 110. Deposition onto the substrate 110 is enhanced by a bias on the substrate 110 provided by the signal generator 156. The biases to the target 104 and support member 112 are controlled according to the processes described in detail below.
Following the deposition cycle, the substrate support member 112 is lowered to a loading/unloading position. The robot is then extended into the chamber 100 through the opening 108 and the substrate 110 is placed on the robot for removal from the chamber 100 and delivery to a subsequent location. Subsequent locations include various processing chambers, such as electroplating chambers, where the substrate 110 undergoes additional processing.
The directionality of the material sputtered from the target 104 during processing is determined, in part, by the voltage drop between the plasma and the substrate 110 due to the applied or self-bias on the substrate 110. The voltage drop occurs in a region known as the sheath and effects an electrical field perpendicular to the substrate 110 which provides directionality of the ionized target material toward the substrate 110, thereby enhancing bottom coverage (while relatively reducing sidewall coverage) of the device feature. In order to achieve improved sidewall coverage, the invention modulates one or both of the bias on the substrate 110 and the bias on the target 104. Good step coverage on the device features of the substrate 110 is achieved by ensuring the proper proportions of bottom coverage and sidewall coverage.
In one aspect of the invention, the bias signal provided to the support member 112 is modulated in various manners to achieve greater control over the deposition of a film on the substrate 110. In general, the signal attributes to be controlled by the invention are waveform, frequency and amplitude. While the following embodiments are described with reference to the particular devices described above with reference to FIG. 5, persons skilled in the art will recognize alternative apparatus and techniques of practicing the invention.
In a first embodiment of the invention, a deposition process is accomplished in two phases wherein the bias to the support member 112 is pulsed between a negative voltage (phase I) and zero (0) voltage (phase II) while the voltage to target 104 is held constant. This may be done using the controller 149 and executing the appropriate subroutine 258 stored in memory 252 (shown in FIG. 6). According to the particular file executed, the controller 149 transmits a corresponding signal to the waveform generator 158 which outputs the desired waveform to the power supply 134. The output of the signal generator 156 is then applied to the support member 112. Application of the signal from the signal generator 156 induces a voltage (Vdc) on the support member 112. Where the substrate 110 comprises a conductive material, or layer of material, the bias may be applied directly to the substrate 110. In cases where the substrate 110 comprises a non-conductive material, the bias voltage is capacitively coupled to the substrate 110.
The output of the waveform generator 158, the signal generator 156 and the bias waveform on the substrate 110 disposed on the support member 112 are shown in FIGS. 7, 8 and 9 respectively. FIG. 7 shows the waveform 180 supplied from the waveform generator 158 to the power supply 134. The waveform 180 carries the information regarding the desired shape, voltage and frequency of the signal to be applied to the support member 110. The waveform 180 is a pulsed square wave comprising periodic power pulses 182. Thus, the waveform 180 includes a first phase wherein a pulse 182 is supplied to power supply 134 and a second phase wherein no signal is provided. At the power supply 134, the waveform 180 is converted into a corresponding output signal 184 of the desired shape, voltage, and frequency which is then supplied to the substrate support member 112. As shown in FIG. 8, the resulting output signal 184 from the power supply 134 has a first portion (phase I) which varies inside an envelope 186 between a negative and positive voltage and a second portion (phase II) at zero volts. Preferably, the signal during the second portion is a RF signal having a frequency of 13.56 MHz, however, other frequencies may be used. Thus, the signal generator 156 produces a pulsed output, thereby only periodically providing a bias to the support member 112. The output signal 184 has a pulse width t1 (defining phase I) and a period T1.
The resulting bias waveform 200 on the substrate 110 is shown in FIG. 9 and illustrates that the output signal 184 from the signal generator 156 experiences a negative voltage shift. This shift occurs in the presence of the plasma because the output signal 184 during phase II is a RF signal which varies with time. While electrons of a plasma can be alternately attracted and repulsed relative to the substrate 110 according to the RF output waveform 184 from the signal generator 156, the plasma ions are unable to respond to rapidly changing polarity of the RF signal because of their substantially larger inertia. The difference between ions and electrons of the plasma in their ability to respond to the changing polarity of the RF signal results in the shift.
The quantity of the shift of the output signal 184 from the signal generator 156 is generally known as a self-bias voltage, Vdc. FIG. 10 shows the quantity of the shift of the output signal 184 on the substrate 110. The resulting self-bias Vdc on the support member 112 illustrates phase I wherein a voltage is applied and phase II wherein no voltage is applied. The period and pulse width of Vdc is determined by the output of the signal generator 156. Thus, Vdc is a step function or square wave having the pulse width t1 and the period T1.
The waveform of the bias on the target 104, as determined by the first signal generator 150, is shown in FIG. 11 which indicates that the target bias is held at a constant voltage throughout the process, i.e., during phase I and II. Thus, sputtering from the target 104 is constantly maintained at a substantially constant rate.
By controlling the duty cycle of the bias waveform 200 applied to the substrate 110, the desired proportions of bottom and sidewall coverage of the features formed in the substrate 110 are possible. The duty cycle, t1/T1, is preferably between about 30-70% with a bias pulse width t1 between about 1 μs to 10 seconds and a frequency (1/T1) between about 0.1 Hz-1 MHz. More generally, a lower duty cycle (t1/T1) results in more sidewall coverage while a higher duty cycle (t1/T1) results in more bottom coverage, as will be described further below. It is noted that the frequency (typically 13.56 MHz) of the RF carrier signal is distinct from the frequency (1/T1) at which the signal is pulsed or modulated.
In phase I, the power supplied to the support member 112 induces the negative bias Vdc on the substrate 110 as illustrated graphically in FIG. 9. The negative bias attracts positively charged particles, primarily the ionized metal, toward the substrate 110. Because the bias Vdc establishes a resulting electric field E substantially perpendicular to the substrate 110, the positively charged particles in the processing region 107 assume a trajectory substantially perpendicular to the substrate 110. FIG. 12 is a cross section of a feature 210, such as a via or contact, formed in the substrate 110, wherein the feature 210 comprises a bottom 212 and sidewalls 214. The angular distribution pattern 216 of incoming ions, shown here as Cu ions, exhibits substantial perpendicularity relative to the substrate 110 due to the negative bias Vdc on the substrate 110. As a result, application of the bias achieves more deposition on the bottom 212 than is possible without the bias on the substrate 110.
In phase II, the current from the signal generator 156 is terminated. Without the presence of an applied bias to the substrate 110, the charged particles in the chamber 100 exhibit less directionality perpendicular to the substrate 110. A representation of the resulting distribution pattern 218 is shown in FIG. 13 and indicates that the particles experience less directionality with respect to the substrate 110 and tend to strike the substrate 110 at oblique angles in greater proportions. As a result, the absence of the applied bias to the substrate 110 allows a higher percentage of ions to deposit on the sidewalls 214 than is possible with the applied bias.
As noted above, a lower duty cycle results in more sidewall coverage while a higher duty cycle results in more bottom coverage. This result follows because a lower duty cycle (i.e., short t1) corresponds to a relatively higher percentage of phase II in the duty cycle wherein the resulting angular distribution produces more sidewall coverage. A higher duty cycle (i.e., high t1), on the other hand, corresponds to a relatively longer phase I wherein the resulting angular distribution produces more bottom coverage.
The effect of pulsing the bias on the substrate 110 is illustrated in FIGS. 14A-D which shows the progressive deposition of a material on the substrate 110. During phase I (FIGS. 14A and 14C) the percentage of deposition on the bottom 212 of the feature 210 is higher, while during phase II (FIGS. 14B and 14D) the percentage of deposition on the sidewalls 214 is higher. By modulating the substrate bias to vary the angular distribution of ions, the profile of the deposition may be controlled, thereby resulting in conformal step coverage and void-free deposition.
In an alternative embodiment, the modulated bias on the substrate 110 can also be achieved by periodically opening and closing the switch 160 at a desired frequency while a constant current and voltage is provided by the second signal generator 156. With the switch 160 in a closed position, power is supplied to the support member 112 to induce a negative induced bias Vdc thereon as indicated by phase I in FIG. 9, thereby establishing an electric field in the sheath between the plasma and the substrate 110. When the switch 160 is subsequently opened in phase II, the Vdc is terminated, thereby substantially reducing the electric field in the sheath. Accordingly, the angular distribution pattern of ions can be modulated depending on the presence of the electric field E, as shown in FIGS. 12-13. The modulated angular distribution pattern, in turn, accommodates the desired proportions of sidewall coverage and bottom coverage of a device feature. During phase I, when the switch 160 is closed, the angular distribution of the ions is an over-cosine distribution, resulting in more deposition on the bottom 212 of the feature 210. During phase II, when the switch 160 is open, the angular distribution of the ions is a cosine distribution, resulting in more deposition on the sidewalls 214 of the feature 210. Such an arrangement using switch 160 avoids the need for a more elaborate and expensive arrangement using the waveform modulator 158.
In another embodiment, a three phase approach is used to deposit material on a substrate whereby the signal to the target 104 and the support member 112 is modulated. The phases include a first target biasing phase (phase I), a neutral phase (phase II) and a support member biasing phase (phase III). The signals to the target 104 and the support member 112 are shown in FIGS. 15 and 16, respectively.
During phase I, power is supplied from the first signal generator 150 to the target 104 while the support member 112 is electrically neutral, i.e., no power is supplied from the second signal generator 156. The resulting negative bias on the target 104 attracts positively charged ions adjacent the target 104 such as Ar ions which are made available from the Ar gas supplied by the plasma gas sources 142, 144. The Ar ions strike the target 104 and cause sputtering of material (typically atoms) therefrom. As shown in FIG. 15, the power supplied to the target 104 is a pulsed signal 220 and preferably has a duty cycle of between about 10% and 50% and a pulse width t2 of between about 0.1 μs and 10 μs and a period T2 between about 1 μs and 100 μs. Thus, the pulse frequency (1/T2) is between about 10 KHz-1 MHz.
During phase II, both the target 104 and the support member 112 are electrically neutral, i.e., no power is supplied from either of the signal generators 150, 156. During this period of time, the material sputtered from the target 104 during phase I traverses the processing region 107 between the target 104 and the substrate 112 and is ionized by the plasma in the chamber 100. A portion of the ionized material then deposits on the substrate 110 to form a film thereon. In one embodiment, phase II may have a time duration between about 0.1 μs and 1 μs.
During phase III, the target 104 remains unbiased and a signal is provided to the support member 112 from the second signal generator 156. As shown in FIG. 16, the power supplied to the support member 112 is a pulsed signal 222 and preferably has a duty cycle of between about 10-50% and a pulse width t3 of about 0.1 μs and 10 μs and a period T3 of 1-100 μs seconds. Thus, the pulse frequency (1/T3) is between about 10 KHz-1 MHz.
FIGS. 17 and 18 illustrate the effects of modulating the target bias and the substrate bias on the material being deposited at the substrate surface. FIGS. 17-18 are cross sections of a feature 210 formed on the substrate 110 having a bottom 212 and sidewalls 214. During phases I and II, the target 104 is sputtered while no bias is applied to the substrate 110. In the absence of an applied bias to the substrate 110, the distribution pattern of the ionized flux is relatively broader, such as the pattern shown in FIG. 17. As a result, a higher percentage of the ions strike the substrate 110 at an oblique angle than would occur with an applied substrate bias. The resulting distribution pattern 230 of the ionized target flux (shown here as Cu) provides relatively more deposition on the sidewalls 214 than on the bottom 212 as compared to phase III. During phase III, the signal supplied by the second signal generator 156 induces a negative bias on substrate 110 providing an attractive force to the ionized target flux and causing highly anisotropic deposition of the ionized material relative to the substrate 110. Application of the bias results in good coverage of the bottom 212 of the device feature 210 formed on the substrate 110. The resulting distribution pattern 232 of the ionized target flux generated during the application of a negative bias to the substrate is shown in FIG. 18.
The effect of the three phase pulsing method described above on deposition is illustrated in FIGS. 19A-D which show the progressive deposition of material on the substrate 110. Phase I provides a "burst" of material sputtered from the target 104. During phase I no material is being deposited on the substrate 110 because, although the target 104 has been sputtered, no material has yet traversed the space between the target 104 and the substrate 110 to reach the substrate 110. In phase II, the burst of material is ionized and arrives at the unbiased substrate to provide relatively more deposition on the sidewalls 214 of the features 210 (FIGS. 19A and 19C). During Phase III, the ionized material continues to arrive at the substrate which is now biased to ensure relatively more deposition on the bottoms 212 of the features 210 (FIGS. 19B and 19D). By modulating the bias on the substrate (Vdc) to vary the angular distribution of ions, the profile of the deposition may be controlled, thereby resulting in conformal step coverage and void-free deposition.
This latter approach provides additional control during an ionized metal plasma deposition process and has particular utility where re-sputtering is a problem due to the bias on the substrate. As described with respect to each of the embodiments above, periodic application of a negative bias to the support member 112 attracts charged particles, thereby increasing the incidence rate and momentum of the particles on the substrate 110. While the bias allows for greater control of the directionality of the particles relative to the substrate, a sufficiently high bias can cause faceting of the features or resputtering of the material already formed on the substrate 110 and lead to undesirable device shapes. As described above, faceting and re-sputtering can be undesirable because of the potential for detrimental effects on subsequent processes and void formation.
Because a bias to the substrate 110 is applied only for a short period of time, the process described with reference to FIGS. 15-19 provides a method of controlling faceting/re-sputtering and minimizing undesirable material formations in or on the device features. The "burst" of target material sputtered from the target 104 during phase I is given sufficient time to ionize during phase II before application of the bias to the substrate 110 in phase III. Thus, faceting of the feature and re-sputtering of the film by the Ar ions during phase I and II is avoided (or minimized where the substrate maintains some negative self-bias). By simultaneously modulating the bias to the target 104, the amount of material available for deposition can be controlled to avoid excessive deposition on the sidewalls of device features.
Additionally, terminating the bias to the target for a period of time ensures that a relatively higher electron temperature is maintained in the plasma. The inventors determined that maintaining a constant bias on the target can significantly depress the electron temperature of the plasma over time. As a result, the rate at which target flux is ionized is decreased. By modulating the target bias higher ionization efficiency is achieved.
While the foregoing embodiments utilize a step function waveform (i.e., the AC signal is supplied at zero or at full frequency/power), the present invention contemplates varying the waveform and/or amplitude to manipulate the energy and velocity of the ionized target material. Thus, rather than abruptly altering the angular distribution of the ionized material with square wave pulses, such as are shown in FIGS. 7-10 and 16, the bias waveform of the output signal 184 provided to the substrate 110 may allow a more gradual ramping up to a peak voltage and ramping down to zero voltage. FIGS. 20-22 are illustrative of other waveforms which may produced by the signal generator 156 and applied to the substrate to induce a bias thereon. By controlling the waveform of the signal applied to the substrate being processed, the ion directionality and, hence, the deposition profile, can be adjusted to achieve a desired result.
While the foregoing is directed to the preferred embodiment of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.
|Cited Patent
|Filing date
|Publication date
|Oct 23, 1965
|Nov 12, 1968
|Method and apparatus for reverse sputtering selected electrically exposed areas of a cathodically biased workpiece
|Oct 24, 1986
|Jul 12, 1988
|Kemira Oy
|Paper-making method and a combination of ingredients to be used in it
|Jul 28, 1987
|Sep 12, 1989
|Varian Associates, Inc.
|Apparatus for manufacturing planarized aluminum films
|Mar 28, 1988
|Oct 17, 1989
|Microelectronics And Computer Technology Corporation
|Method of deposition of metal into cavities on a substrate
|Jun 6, 1987
|Oct 17, 1989
|Tadahiro Ohmi
|Semiconductor manufacturing apparatus
|Jan 26, 1989
|Oct 16, 1990
|Hitachi, Ltd.
|Sputtering process and an apparatus for carrying out the same
|Jun 29, 1988
|Mar 12, 1991
|Hitachi, Ltd.
|Method of and apparatus for sputtering
|Aug 29, 1990
|Jan 7, 1992
|Jerry Grosman
|Ion plating method and apparatus
|Aug 22, 1990
|Jun 30, 1992
|Materials Research Corporation
|Sputter coating process control method and apparatus
|Feb 26, 1992
|Nov 16, 1993
|International Business Machines Corporation
|Refractory metal capped low resistivity metal conductor lines and vias
|Sep 25, 1992
|Apr 12, 1994
|International Business Machines Corporation
|Method and apparatus for filing high aspect patterns with metal
|Jul 30, 1992
|Apr 12, 1994
|Magtron Magneto Elektronische Gerate Gmbh
|Low frequency, pulsed, bipolar power supply for a plasma chamber
|Aug 14, 1992
|Sep 13, 1994
|Hughes Aircraft Company
|Plasma-enhanced magnetron-sputtered deposition of materials
|Dec 31, 1992
|Dec 27, 1994
|International Business Machines Corporation
|Process of making pad structure for solder ball limiting metallurgy having reduced edge stress
|Oct 29, 1993
|Jan 23, 1996
|Kawasaki Steel Corporation
|Method of forming multilayered wiring structure in semiconductor device
|Dec 22, 1994
|Apr 23, 1996
|Canon Kabushiki Kaisha
|Method for forming a functional deposited film by bias sputtering process at a relatively low substrate temperature
|Oct 20, 1995
|Dec 17, 1996
|Arc control and switching element protection for pulsed dc cathode sputtering power supply
|Nov 22, 1994
|Dec 17, 1996
|International Business Machines Corporation
|Refractory metal capped low resistivity metal conductor lines and vias
|Feb 17, 1995
|Dec 17, 1996
|Conner Peripherals, Inc.
|Disk drive with PRML read channel calibration using a noise generator
|Dec 5, 1994
|Feb 25, 1997
|Motorola, Inc.
|Method and apparatus for plating metals
|Jun 29, 1992
|Mar 18, 1997
|Intel Corporation
|Methods of forming an interconnect on a semiconductor substrate
|May 12, 1994
|Jun 17, 1997
|Applied Materials
|Synchronous modulation bias sputter method and apparatus for complete planarization of metal films
|Jun 17, 1994
|Jul 29, 1997
|Preferential sputtering of insulators from conductive targets
|Jul 15, 1996
|Dec 2, 1997
|Chartered Semiconductor Manufacturing Pte Ltd.
|Etch stop for copper damascene process
|Apr 2, 1993
|Feb 17, 1998
|Advanced Energy Industries, Inc.
|Enhanced reactive DC sputtering system
|Jul 8, 1996
|Mar 10, 1998
|Micron Technology, Inc.
|Low angle, low energy physical vapor deposition of alloys
|Oct 28, 1996
|Mar 24, 1998
|International Business Machines Corp.
|High aspect ratio low resistivity lines/vias with a tungsten-germanium alloy hard cap
|Apr 8, 1996
|Apr 28, 1998
|Chartered Semiconductor Manufacturing Pte, Ltd
|Method of manufacturing copper interconnect with top barrier layer
|Apr 11, 1997
|Jun 2, 1998
|Industrial Technology Research Institute
|Planarization method for intermetal dielectrics between multilevel interconnections on integrated circuits
|Feb 12, 1996
|Jun 23, 1998
|Eni A Division Of Astec America, Inc.
|Etch process employing asymmetric bipolar pulsed DC
|Jun 2, 1997
|Jul 14, 1998
|Applied Materials, Inc.
|Deposition process for coating or filling re-entry shaped contact holes
|Jan 22, 1996
|Sep 15, 1998
|Micron Technology, Inc.
|In situ preclean in a PVD chamber with a biased substrate configuration
|Sep 27, 1996
|Sep 22, 1998
|Kabushiki Kaisha Toshiba
|Plasma processing apparatus and method
|Sep 30, 1996
|Sep 22, 1998
|Eni Technologies, Inc.
|Preferential sputtering of insulators from conductive targets
|Jun 7, 1995
|Jan 12, 1999
|Applied Materials, Inc.
|Process for forming improved titanium-containing barrier layers
|Jul 17, 1997
|May 18, 1999
|Sharp Microelectronics Technology, Inc.
|Low resistance contact between integrated circuit metal levels and method for same
|Dec 16, 1996
|Aug 3, 1999
|International Business Machines Corporation
|Open-bottomed via liner structure and method for fabricating same
|Mar 25, 1997
|Oct 12, 1999
|Kabushiki Kaisha Toshiba
|Method of manufacturing semiconductor device having multi-layer wiring structure with diffusion preventing film
|Feb 12, 1998
|Oct 19, 1999
|Anelva Corporation
|Ionizing sputter device using a coil shield
|Jul 23, 1997
|Oct 26, 1999
|Advanced Micro Devices, Inc.
|Pulse electroplating copper or copper alloys
|Dec 12, 1997
|Nov 2, 1999
|Applied Materials, Inc.
|Step coverage and overhang improvement by pedestal bias voltage modulation
|Sep 23, 1996
|Dec 14, 1999
|Applied Materials, Inc.
|Semi-selective chemical vapor deposition
|Jun 23, 1997
|Apr 18, 2000
|Applied Materials, Inc.
|Use of pulsed-DC wafer bias for filling vias/trenches with metal in HDP physical vapor deposition
|Oct 6, 1997
|Jun 6, 2000
|Learonal, Inc.
|Programmed pulse electroplating process
|Jul 22, 1998
|Jun 13, 2000
|Novellus Systems, Inc.
|Method of electroplating semiconductor wafer using variable currents and mass transfer to obtain uniform plated layer
|Sep 27, 1996
|Oct 17, 2000
|Atotech Deutschland Gmbh
|Process and circuitry for generating current pulses for electrolytic metal deposition
|Dec 3, 1999
|Feb 5, 2002
|Applied Materials, Inc.
|Pulsed-mode RF bias for sidewall coverage improvement
|Mar 28, 1984
|Oct 31, 1984
|Compression Labs, Inc.
|A combined intraframe and interframe transform coding method
|Jun 28, 1988
|Jan 4, 1989
|Hitachi, Ltd.
|Method of and apparatus for sputtering
|Feb 4, 1997
|Aug 6, 1997
|Matsushita Electronics Corporation
|Semiconductor device having a multi-layered wire structure
|Mar 25, 1997
|Oct 1, 1997
|Kabushiki Kaisha Toshiba
|Method of manufacturing a semiconductor device of multilayer wire structure
|Jul 15, 1998
|Jan 20, 1999
|Sharp Corporation
|Method of producing low resistance contacts between integrated circuit metal levels and structure produced thereby.
|"Endpoint Detection method for Ion Etching of a Material Having a Titanium Nitride Underlayer", Research Disclosure, Feb. 1991, No. 322, Kenneth Mason Publications Ltd. England.
|Apblett, et al., "Silicon nitride growth in a high-density plasma system", Solid State Tech, (Nov. 1995), pp. 73-74 & 78 and 80.
|Cheng, et al., "Directional deposition of Cu into semiconductor trench structures using ionized magnetron sputtering", J. Vac. Sci. Tech., vol. 13, No. 2 (Mar./Apr. 1995), pp. 203-208.
|Getty, et al., Size-scalable 2.45 GHz electron cyclotron resonance plasma source using permanent magnets and waveguide coupling, J. Vac. Sci. Tech., 12(1) (Jan./Feb. 1994), pp. 408-415.
|Gorbatkin, et al., Cu metallization using a permanent magnet electron cyclotron resonance microwave plasma sputtering hybrid system, J. Vac. Sci. Tech, 14(3) (May/Jun. 1996), pp. 1853-1859.
|Hamaguchi, et al., Simulations of trench- lling pro les under ionzed magnetron sputter metal deposition;, J. Vac. Sci. Tech, 13(2) (Mar./Apr. 1995), pp. 183-191.
|Holber, et al., "Copper deposition by electron cyclotron resonance plasma", J. Vac. Sci. Tech., vol. 11, No. 6 (Nov./Dec. 1993), pp. 2903-2910.
|Koenig, et al., RF sputtering system with a variable substrate bias, IBM Tech, Discl. Bull 13(2) (Jul. 1970), pp. 323-324.
|L. J. Kochel, "Pressure control of rf bias for sputtering", Rev. Sci. Instrm., vol. 47, No. 12 (Dec. 1976), pp. 1555-1557.
|M. Yamashita, "Fundamental characteristics of built-in high-frequency coil-type sputtering apparatus", J. Vac. Sci. Tech., 7(2)(Mar./Apr. 1989), pp. 151-158.
|Novellus Damascus Home Page, "12 Steps of Damascus".
|P. Kidd, "A Magnetically confined and electron cyclotron resonance heated plasma machine for coating and ion surface modification use", J. Vac. Sci. Tech., vol. 9, No. 3(May/Jun. 1991), pp. 466-473.
|Park, et al., A novel A-1 reflow process using surface modification by the ECR plasma treatment and its application to the 256Mbit DRAM, IEDM 94, 109-112, pp. 5.4.1-5.5.5 (1994).
|Rossnagel, et al., Collimated magnetron sputter deposition with grazing angle ion bombardment, J. Vac. Sci Tech, vol. 13, No. 1 (Jan./Feb. 1995), pp. 156-158.
|S. Matsuo, Reactive ion-beam etching and plasma deposition techniques using electron cyclotron resonance plasma, Appl. Sol. State Sci, Academic Press (1985), pp. 75-117.
|S. Samukawa, "Wave propagation and plasma uniformity in an electron cyclotron resonance plasma", J. Vac. Sci. Tech., 11(5) (Sep./Oct. 1993), pp. 2572-2576.
|Suzuki, et al., "Microwave plasma etching", Pergamon Press Ltd., vol. 34, No. 10/11 (1984) pp. 953-957.
|Suzuki, et al., "Microwave Plasma Etching". J. App. Phys, 16(11) (Nov. 1977), pp. 1979-1984.
|U.S. patent application Ser. No. 08/768,058, Ramaswami et al., filed Dec. 16, 1996.
|U.S. patent application Ser. No. 09/219,187, Sivaramak,rishnan et al., filed Dec. 21, 1998.
|U.S. patent application Ser. No. 09/360,883, Paterson et al., filed Jul. 23, 1999.
|U.S. patent application Ser. No. 09/449,202, Gopalraja, filed Nov. 24, 1999.
|U.S. patent application Ser. No. 09/454,355, Forster, filed Dec. 3, 1999.
|US 5,863,392, 1/1999, Drummond et al. (withdrawn)
|Yasui, et al., "Electron cyclotron resonance plasma generation using a planar ring-cusp magnetic field and reentrant coaxial cavity", J. Vac. Sci. Tech., vol. 13, No. 4 (Jul./Aug. 1995), pp. 2105-2109.
|Citing Patent
|Filing date
|Publication date
|May 23, 2005
|Jul 24, 2007
|Applied Materials, Inc.
|Deposition of tensile and compressive stressed materials
|Mar 8, 2007
|Jan 12, 2010
|Applied Materials, Inc.
|Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system
|Dec 20, 2006
|Mar 16, 2010
|Applied Materials, Inc.
|Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system
|Dec 20, 2006
|Nov 23, 2010
|Applied Materials, Inc.
|Method of fabricating a high dielectric constant transistor gate using a low energy plasma apparatus
|Sep 26, 2007
|Mar 8, 2011
|Applied Materials, Inc.
|Fluorine plasma treatment of high-k gate stack for defect passivation
|Aug 11, 2006
|Jul 19, 2011
|Huettinger Elektronik Gmbh + Co. Kg
|Supplying RF power to a plasma process
|May 21, 2004
|Feb 21, 2012
|Applied Materials, Inc.
|Formation of a silicon oxynitride layer on a high-k dielectric material
|Aug 27, 2010
|Feb 28, 2012
|Zond, Inc.
|Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities
|Mar 15, 2010
|Oct 22, 2013
|Applied Materials, Inc.
|Silicon nitride passivation layer for covering high aspect ratio features
|Jun 25, 2009
|Feb 25, 2014
|Mks Instruments, Inc.
|Method and system for controlling radio frequency power
|Nov 5, 2007
|Nov 11, 2014
|Trumpf Huettinger Gmbh + Co. Kg
|Driving at least two high frequency-power generators
|Jan 9, 2014
|Dec 16, 2014
|Mks Instruments Inc.
|Method and system for controlling radio frequency power
|Jan 20, 2011
|Sep 1, 2015
|Zond, Llc
|Apparatus and method for sputtering hard coatings
|May 21, 2004
|Nov 24, 2005
|Narwankar Pravin K
|Formation of a silicon oxynitride layer on a high-k dielectric material
|Sep 23, 2005
|Mar 30, 2006
|Zond, Inc.
|Apparatus for generating high current electrical discharges
|Feb 11, 2005
|May 18, 2006
|Applied Materials, Inc.
|Tensile and compressive stressed materials for semiconductors
|Mar 22, 2005
|Sep 28, 2006
|Eal Lee
|Coils utilized in vapor deposition applications and methods of production
|May 23, 2005
|Nov 23, 2006
|Applied Materials, Inc.
|Deposition of tensile and compressive stressed materials for semiconductors
|Jun 13, 2005
|Dec 14, 2006
|Lee Eal H
|Use of DC magnetron sputtering systems
|Aug 11, 2006
|Mar 1, 2007
|Huettinger Elektronik Gmbh + Co. Kg
|Supplying rf power to a plasma process
|May 31, 2006
|Mar 15, 2007
|Metzner Craig R
|Ald metal oxide deposition process using direct oxidation
|Nov 4, 2006
|May 8, 2008
|H�ttinger Elektronik Gmbh + Co. Kg
|Verfahren zur Ansteuerung von zumindest zwei HF-Leistungsgeneratoren
|Nov 4, 2006
|Apr 23, 2009
|H�ttinger Elektronik Gmbh + Co. Kg
|Verfahren zur Ansteuerung von zumindest zwei HF-Leistungsgeneratoren
|U.S. Classification
|International Classification
|Cooperative Classification
|European Classification
|Nov 7, 2001
Owner name: APPLIED MATERIALS, INC., CALIFORNIA
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LIFE WITH ARCHIE in Vietnam by Steveinthecity
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the most random item... Archie Comic CHECKS?!?!? by irishmoxie
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Important dates for us Archie fans. by BettyReggie
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Microtel Inn & Suites By Wyndham Raleigh
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Shopping and BBQ
... After satisfying our hunger we got down to business.
Nadia tried ***********ce again was out-shopped by Damien. There are just too many nice mens clothes at cheap prices. We both did really well and picked up some nice things. The outlet was fairly small but had some good stores.
We headed back to the hotel and had a couple of hours to relax before the big event. As we got into the elevator we met another group going to the ...
Getting close to nature, part 2
... She was given a taste of it when she was at school and will never forget it. She was pleased to hear that Nadia doesn't eat the stuff either! We told her that Tim Tams are a much better example of Australian food that she should try to eat. Maryssa repaid us by recommending a bakery nearby which makes amazing doughnuts, so of course we went straight there!
Before we tried our doughnuts, we had late lunch at a really nice Mexican ...
Savannah to Raleigh
Everyone on contiki had a rather heavy night the night before so the long bus journey we had today was going to be interesting. I woke up hating life with a spinning head and feeling rather delicate. Had some brekky & felt better but still could have done with staying in bed. Then it was on the way to Charleston. We got there and picked up Lynda our tour guide. She got on our bus and we drove round Charleston & it's the prettiest place so far in America ...
Our last 5 days also full!
... stops and momentous events.
On to Montgomery, AL and then Tues. June 2nd we were in Aiken, SC where we visited our dear "old" friends Bob & Bonnie Nowak. Always so nice to spend time with them - sharing news of families & friends. Weather was a little threatening, so decided to forgo a day of golf, and we headed for home a day early!
Arrived home, safe ...
Auf wiedersehen, Deutschland!
... windows that tilt out and open sideways and transparent doors and cobblestone streets—the cable ride up the Zugspitze and mountain views and quaint city centers and Neuschwanstein castle and Nussdorf—We Will Rock You and accordion players and opera singers in the street—rainy walks and brilliant blue skies and a carriage ride—car warning lights and getting lost and finding our way again. As the commercial says, ...


text:
ARM suppliers join Facebook Open Compute Project
Facebook's Open Compute Project is being expanded to incorporate ARM processors, providing new options for companies shopping for low-cost hardware to build out cloud computing environments.
Facebook's Open Compute Project is being expanded to incorporate ARM processors, providing new options for companies shopping for low-cost hardware to build out cloud computing environments.
Intel said it is working to make the Thunderbolt data transfer technology faster as it wages a speed race with the USB 3.0 protocol, but the company declined to say when improvements will be finished.
NEC's new high-end server contains swappable battery packs, intended to provide backup power without the need for an external uninterruptible power supply (UPS) in data centers.
Change in any industry involves conflict. Evolution and revolution in tech this year took place not only in the marketplace but also in the courtroom, the factory, and on the Web. Here are the top news stories of 2012 as selected by the editors of th...
Advanced Micro Devices has cut orders to contract chip manufacturer GlobalFoundries, expecting a "choppy demand environment" in the next few quarters.
News of weak server sales, continuing turmoil at Hewlett-Packard and the ongoing U.S. political impasse over the so-called "fiscal cliff" have not given tech industry watchers much to cheer about this week.
Worldwide server shipments went up in the third quarter of 2012, but revenue from those sales dropped due to economic uncertainty in some parts of the world, research firm Gartner said in a study released on Wednesday.
NEC is working on a new type of small data center unit that uses convection to slash power usage by a third, even in Japan's hot, sticky climate.
Dell on Thursday reported a sharp drop in revenue and profits for the third quarter as the weak PC market continued to weigh on its results.
Hewlett-Packard is taking a step away from traditional server design with the new Proliant SL4500 server, which mixes processing, networking and storage units to optimize performance of applications like OpenStack and Hadoop.
Looking beyond PCs and tablets, Lenovo on Monday announced the first server from the newly formed Enterprise Product Group, which deals in servers, storage, networking and software.
With a future in ARM servers looming, Advanced Micro Devices on Monday announced its fastest 16-core Opteron 6300 server chips as the company continues to enhance its x86 chips.
Dell has built a prototype server based on a 64-bit ARM processor from Applied Micro Circuits, which showed the system at a conference in Silicon Valley on Thursday.
AMD has called a press conference in San Francisco on Monday where it's likely to announce plans for a SeaMicro server based on an upcoming 64-bit processor design from ARM.
In 2012 a fundamental change in server architecture could be on tap as companies look to cut data center costs with the help of technologies like ARM processors and graphics chips, analysts said.
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First impression on unpacking the Q702 test unit was the solid feel and clean, minimalist styling.
For work use, Microsoft Word and Excel programs pre-installed on the device are adequate for preparing short documents.
The Fujitsu LifeBook UH574 allowed for great mobility without being obnoxiously heavy or clunky. Its twelve hours of battery life did not disappoint.
The screen was particularly good. It is bright and visible from most angles, however heat is an issue, particularly around the Windows button on the front, and on the back where the battery housing is located.
My first impression after unboxing the Q702 is that it is a nice looking unit. Styling is somewhat minimalist but very effective. The tablet part, once detached, has a nice weight, and no buttons or switches are located in awkward or intrusive positions.


text:
|Ribes (RYE-bees) (Info)
Edible Fruits and Nuts
4-6 ft. (1.2-1.8 m)
6-8 ft. (1.8-2.4 m)
USDA Zone 3a: to -39.9 �C (-40 �F)
USDA Zone 3b: to -37.2 �C (-35 �F)
USDA Zone 4a: to -34.4 �C (-30 �F)
USDA Zone 4b: to -31.6 �C (-25 �F)
USDA Zone 5a: to -28.8 �C (-20 �F)
USDA Zone 5b: to -26.1 �C (-15 �F)
USDA Zone 6a: to -23.3 �C (-10 �F)
USDA Zone 6b: to -20.5 �C (-5 �F)
Full Sun
Sun to Partial Shade
6.1 to 6.5 (mildly acidic)
6.6 to 7.5 (neutral)
This plant has been said to grow in the following regions:
Boise, Idaho
Lake Villa, Illinois
Stephenson, Michigan
Columbus, Ohio
Jamestown, Ohio
Hummelstown, Pennsylvania
Langley, Washington
Marathon, Wisconsinshow all
On Jun 19, 2010, genshiro from Whitby
This plant grows best in fertile, loamy, well drained soil. It's berrys are produced in late spring to mid summer and are excellent for jellies, pies and preserves. Beware: They are also popular with the local wildlife, which may get to them before you do.
On Jan 28, 2006, Gabrielle from (Zone 5a) wrote:
Though not thornless, it is called "nearly thornless." I have not had mine long enough for production, but am looking forward to it. Hopefully I can change to positive soon.


text:
Tuesday, May 21, 2013
4 Comments | 2845 Views | Copyright: IANS
Actor-comedian Kapil Sharma who has been part of the Comedy Circus on Sony TV marks his debut as a producer with TV show "Comedy Nights With Kapil".
Adding to the madness, he will be seen donning multiple avatars, that of an actor, scriptwriter and producer in his production debut.
Known for his strong comic timing as well as his ability to find humour in any situation, he will present a distinctive take on everyday life in a fresh way.
The show is likely to hit the small screen in June on Colors.
At the same time, the 32-year-old will be seen exhibiting his dancing skills on "Jhalak Dikhhla Jaa 6", which is also going on air next month.
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Last week in Crow we awoke to a beautiful sight- snow in the apple orchard! Happy holidays and wishing you all an awesome 2009! Jim and Jennifer
Blessed by Wintry beauty
By: CrowJimbobSubscribe Channel: Weather & Scenery Location: Crow, Oregon
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says ... on Wednesday, Dec 24 at 9:37 AM
wow blessed how blessed indeed, blessed be all


text:
Suburban Retailing for the New Brooklyn
By DIANE CARDWELL
Published: April 28, 2004
In Dumbo, a high-concept exercise in nesting lust called Hadco, a demonstration center where customers can try out luxe appliances for purchase elsewhere, has opened near outposts of ABC Carpet and Home and West Elm. In Gowanus, within eyeshot of a fuel-oil depot and a bustling scrap-metal business, a gleaming new 136,000-square-foot Lowe's, the chain's first foray into New York City's urban market, is set to open this Friday. And in Red Hook, if Ikea has its way, an enormous yellow and blue box will draw shoppers to the Erie Basin.
Even as the assorted factions with stakes in the future of Brooklyn haggle over the relative merits of housing versus industry, preservation versus economic development, and the needs of the affluent versus those of the working stiff, a quiet retail revolution has already come to the eastern shores of the East River. Responding to the pent-up desires of those living in the borough, as well as to the coming hordes foreshadowed by a new-housing boom, home renovation and furnishing stores -- some big-box, some just big -- are suddenly finding their way to Brooklyn and remaking its neighborhoods, albeit in fits and starts. While some say it means that the borough is the new Manhattan, others argue that it is becoming the new suburbs. Perhaps, in the end, it is simply the new Brooklyn.
''The arrival of all of these home-furnishing stores follows the explosion in residential development,'' said Kenneth Adams, president of the Brooklyn Chamber of Commerce. ''Historically, there's been unmet consumer demand in this area, but that's really crescendoed,'' he added, as a ''wave of residential development continues to wash over Brooklyn.''
According to census figures released in January, the borough leads the city in new home construction, a phenomenon that is visible in the neat rows of multifamily houses in East New York, in the 850-unit Oceana complex in Brighton Beach, and in the tall apartment buildings rising on Fourth Avenue in Park Slope and throughout Downtown Brooklyn.
Mr. Adams plans to play host this weekend to the second annual Brooklyn Designs show, featuring the works of 46 Brooklyn-based furnishings designers and manufacturers. He said the new retailers were responding not only to the potential customers who already have homes to fix up but also to those who may be moving in soon. The chamber is following at least 34 projects that are in the proposal, planning or construction stage and could bring more than 10,000 new residences to the borough.
Still, this is Brooklyn, the wounded sister-city where the warring forces of change and stasis seem locked in a steely death-grip, and so the specter of these megastores and their customer traffic is being greeted with a push-me, pull-you combination of enthusiasm and revulsion. For some residents, especially when they also consider the plans for Fairway, Whole Foods and Target stores, the retailers seem like so many Godzillas lumbering through cobblestone streets, leaving devastated mom-and-pop stores in their wake. For other Brooklynites, they represent long-overdue amenities and convenience, in addition to the promise of jobs.
All of these conflicting feelings have been reflected in the responses to the Lowe's and the proposed Ikea, though each store's path has been very different. The Lowe's store, on the site of an abandoned postal depot, has practically slipped in under the radar, with little opposition. Ikea, on the other hand, which considered but rejected the Lowe's site as too small to accommodate a 346,000-square-foot store, has become, even before it owns the waterfront land on which it hopes to build, the latest wedge dividing the neighborhood along lines of race, class and aspiration.
''The Lowe's property is on the Gowanus Canal -- it's in a busy area which is pretty solidly industrial, and Lowe's is a neighborhood-serving use,'' said Leah Archibald, executive director of the Southwest Brooklyn Industrial Development Corporation. ''People don't see Lowe's as a destination retail experience. Ikea is a destination. The Ikea site absolutely requires human beings to drive their cars through residential streets.''
Lowe's executives say that the Gowanus store is critical to their consideration of expanding into urban markets, and that they worked closely with community representatives to make sure they were seen as a good neighbor. They built a tree-lined esplanade along the fouled Gowanus Canal and used local employment organizations to ensure that nearby residents were considered for the jobs, said Jennifer Smith, a Lowe's spokeswoman.
''We looked at the density of the market and certainly the number of households'' in the area, said Larry Stone, senior executive vice president for store operations. ''And you look at the housing and it seems that people really spend a lot of money keeping them up-to-date, so we just think it's a fabulous area.''
The Lowe's store is as large as the standard suburban model, but while customers will not find the same selection of lawn tractors, they will find far more wallboard and high-security locks. To accommodate the city's large Jewish population, Mr. Stone said, instructional clinics will be held on Sundays instead of Saturdays.


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Welcome to the homepage of the Albany Citizens' Police Review Board
(CPRB). The CPRB is an independent body established by the City of
Albany in 2000 to improve communication between the police department
and the community, to increase police accountability and credibility
with the public, and to create a complaint review process that is free
from bias and informed of actual police practice.
In addition to
its authority to review and comment on completed investigations of
complaints made by citizens against officers of the city of Albany
Police Department for alleged misconduct, the nine-member Board may make
recommendations to the Common Council and the Mayor regarding police
policies and practices relevant to the goals of community policing and
the exercise of discretionary authority by police officers. Board
members are appointed by the Mayor and the Common Council. The Board is
required to, among other things, undergo significant training and
engage in public outreach and education.
In a unique
arrangement, the Government Law Center of Albany Law School provides
substantial support services to assist the Board in its duties and
A Citizen's Guide to the Complaint Process (.pdf)
A Citizen's Guide to the Complaint Process (Spanish version .pdf)
Community members and the police came together on Saturday, August 8, 2015 for Building Relationships Between Our Communities of Color and the Albany Police Department to address race relations in the city.
The well attended discussion is part of a continued effort to educate citizens about their rights while bringing our community closer together.
For ABC News 10 coverage, click here.
ALBANY, N.Y. – The Citizens Police Review Board (CPRB) has appointed three new members to its board: Lawrence Becker, Charles C. Goodbee Sr. and Ivy Morris. For biographies and more information, click here.


text:
Buy Item $13.99 Retail:
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From the account of God's creation to God's revelation to John, each story in this children's Bible is chosen carefully to provide kids with a daily reading that will deepen their love of God's Word. In addition, the last section of the book provides an easily accessible Bible encyclopedia. Meant to help kids better understand what they are reading, it contains points of reference about life in Bible times, including civilizations, food, homes, towns, weapons, religious practices, work, and daily life. The final product is a solid One Year Bible that will provide kids with a deeper understanding of God's Word, while instilling in them a love for reading their Bible every day.
|Format: Hardcover
Number of Pages: 352
Vendor: Tyndale House
Publication Date: 2007
Dimensions: 10.5 X 7.75 X 1.25 (inches)
Availability: In Stock
Ages: 6-10
Series: One Year


text:
Portland, ORUSA
Hometown: Rome, NY
December 30, 2013
Anything by Crosby Stills Nash and Young.
I'm a 42yo woman newly returned to town, and looking for ways to meet people and have fun. This is practically my kitchen playlist, so right up my alley!
Meetup members, Log in
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text:
Holiday Center
Monroeville, Pennsylvania
Store Events
Aimee Bungard Art
Look for Aimee Bungard art on display at your Monroeville HPB throughout October. Ms. Bungard's art features organic interpretations through painting, drawing and mixed media. Art is available for purchase. See store for details.
Joseph Moore Book Signing
Meet local children's author Joseph Moore on Saturday, September 26, from 1 to 3 p.m. at your Monroeville HPB. Joseph will read, sell and sign his kids' book Maxwell, the Raindrop Who Wouldn't Fall Books will be sold independently by the author while supplies last.
Trick or Treat at HPB
It's only treats at the Monroeville HPB all day on Halloween Saturday, October 31. Kids are invited to come by for FREE sweet treats and non candy items. No trick! Just happy Halloween fun.
Second Sunday Storytime
Pack up your half-pint readers and come to your Monroeville HPB for Storytime Sundays. Sit down and enjoy a good tale with us at 2 pm on the second Sunday of each month.


text:
The Horrible Show Live #403 - Making the Best of Bad Games
966d ago - We all makes mistakes, and bad video games are going to find their way into your library at some... | PC
The Deal: Most Disappointing Game of 2012
984d ago - "Marquis and I discuss our "Most Disappointing Game" pick of 2012 with some rather interesting co... | Industry
MoreConsole takes on Destiny: The Taken King
Now - MoreConsole's rag-tag band of guardians finally make it to the Oryx's ship...but can they make it out alive? | Promoted post
N4G Radio 07/30/2012
1165d ago - The summer lull continues to beat down the boys this week. Hosts: Ken McKown Jason Gambrel... | PC
New images for Resident Evil: Operation Raccoon City Vector Action Figure
1193d ago - Several new images have been revealed for the upcoming Resident Evil: Operation Raccoon City Vect... | PC
Games Only Podcast 44 – Vessel, Penny Arcade Ep3, Walking Dead Ep2
1194d ago - This week! –Sunflower plays the new Battlefield 3 DLC, Close Quarters! Is it worth your money?... | PC
Resident Evil ORC Echo Six - Turrets Syndrome Trophy Achievement Guide
1230d ago - This guide shows you how to turn off the three turrets on the level - The Place We're Meant To Di... | PC
Resident Evil ORC Echo Six - The Place We're Meant To Die Playthrough
1232d ago - This is a playthrough of the stage The Place We're Meant To Die achieving the "Derailed" Trophy. | PC
Resident Evil ORC Echo Six - Divided We Fall - Boys Club Trophy Achievement Guide
1233d ago - In this guide we net three Trophies, "Divided We Fall"(complete any mission with no HUMAN play... | PC
Super Gaming Best Friends #109 - Manis, Pedis, and Demons
1240d ago - Josh, Justin, Ethan and special guest, Deeto, kick back and relax to discuss the latest gossip on... | PC
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1244d ago - Enizr.com writes: "I recently procured the PC version of Resident Evil Operation Raccoon City and... | PC
Resident Evil - Operation Raccoon City - Mission 1 Containment S+ Walkthrough
1260d ago - This is an S+ run on the first Mission Containment. You will only have to fight soldiers and cer... | PC
Resident Evil - Operation Raccoon City - A Bloody Good Time Trophy Achievement Guide
1266d ago - This is a combat related trophy and it can be done either in Campaign Mode or Versus Mode. For th... | PC
Resident Evil - Operation Raccoon City - Raccoon City Mascot Trophy Achievement Guide
1267d ago - In this vid I show the locations to all the Raccoons, achieving the Raccoon City Mascot Trophy! | PC
Resident Evil Operation Raccoon City:The Loyalists - Died Trying - A Hero Spared! Achievement Guide
1267d ago - This guide shows the three available endings for Resident Evil ORC. Died Trying - Attempt "The R... | PC
rawDLC: Episode 78 – The Kinect Effect Cubed - Extended Edition
1267d ago - This week on rawDLC, the saga continues as the guys talk, once again, about Mass Effect 3 with th... | Culture
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Resident Evil - Operation Raccoon City - All Special Brutal Moves
1270d ago - This is a fan video showing all the charactor's Special Brutal Moves, to perform one you need to... | PC
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Games & Memes Comics: Resident Evil: Operation Raccoon City Challenge
1271d ago - A comic strip series featuring meme characters. Resident Evil: Operation Raccoon City didn't turn... | PC
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1274d ago - For this trophy simply shoot a Licker that has grappled one of your squad members. | PC
Warhammer: Arcane Magic price drop - Now $3.99!
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text:
Keiko Matsui
Sat, Feb 22, 2014 7:30 pm
Birchmere Music Hall, Alexandria, VA
Sorry, this event has already taken place. Please see similar events below.
|Oct 17 Sat 7:30 PM
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|Oct 18 Sun 7:30 PM
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Annapolis, MD


text:
What the Classroom Didn't Teach Me About the American Empire
Local Resistance Can Overthrow Our Political Masters
Here's Why the Trans-Pacific Partnership Agreement Is Just Plain Wrong
Flush With Cash, Right-Wing Extremists Train the Future Zealots of Pro-Israel Campus Activism
The Conservative Evasion on Guns
By Michael Gorra $ 18.00
By Tom Dunkel $17.42
Obama's stated willingness to unilaterally strike nuclear-armed U.S. ally Pakistan, Clinton's promise to Iran to "totally obliterate" the nation of 70 million (should it attack Israel), and McCain's hard-line position on Russia, including the deployment of a missile defense in Eastern Europe, all point to a reliance on military solutions.
AP photo / Kevin Frayer
George W. Bush's attempt to juggle Israel's 60th anniversary, Israeli-Palestinian peace efforts and his hostility toward Iran means that Palestinians lose again.
Sheldon Wolin's new book offers a controversial but ultimately convincing diagnosis of how America's democracy has succumbed to an unacknowledged totalitarian temptation.
The Reagan era in American politics is about to end, and we have George W. Bush to thank for its demise.
By Mr. Fish —
Wikimedia Commons / AllyUnion
The Chicago City Council is debating a resolution urging the Illinois congressional delegation to oppose a war with Iran. Scott Ritter, who has been called as an expert witness on the matter, explains why the resolution should be supported—and not just by the citizens of Chicago.
Sami al-Haj is a free man today, after having been imprisoned by the U.S. military for more than six years. His crime: journalism.
Emira Woods, co-director of Foreign Policy in Focus, argues for a more humane foreign policy and explains why American airstrikes in Somalia and elsewhere are about more than terrorism.
Flickr / openDemocracy
According to a newly released State Department report, Pakistan experienced twice as many terrorist attacks against nonmilitary targets in 2007 than it did in 2006, killing 1,335 people. That kind of instability would be pretty frightening if Pakistan had dozens of nuclear weapons. Oh, wait a second, it does.
When the second plane hit the second skyscraper on 9/11, how many of us knew then just how radically our world would change?
Nobody with a functioning memory should be too quick to condemn Jimmy Carter for daring to speak with the leadership of Hamas, as nearly everyone along the American political spectrum suddenly has felt obliged to do.
It's getting ugly out there. With just a day to go before the much anticipated Pennsylvania primary, the Democrats are running a blitz of negative ads, like this one from Hillary Clinton that features a cameo from a certain bearded terrorist.
What separates Jimmy Carter from the neocons, other than a Nobel Prize, is his genuine desire to negotiate a Middle East peace settlement, and that means talking to everyone.
AP photo / Walter Petruska
The State Department says it has twice asked Jimmy Carter not to meet with Hamas leaders, but the former president says he feels "quite at ease" in going ahead with a scheduled meeting because "Hamas will have to be included" if there is to be peace in the region.
Quite a "defining moment" in Iraq, wasn't it? At this rate, John McCain is going to be proved right: The war will last a century.
The Independent's Robert Fisk looks back at five years of catastrophe in Iraq and is reminded of Winston Churchill's depiction of Palestine as a "hell-disaster."
Five years, nearly 4,000 dead Americans, millions of killed or displaced Iraqi civilians and $500 billion later, George W. Bush still thinks the Iraq war was a good move. In remarks leaked on the eve of his speech marking the anniversary of the war, the president says the high costs "are necessary when we consider the cost of a strategic victory for our enemies in Iraq."
It was only a matter of time before Barack Obama would have to weigh in on the controversy surrounding the sermons of his former pastor, the Rev. Jeremiah Wright, whose rhetorical flair sometimes verged on the incendiary.
Here's a quiz: What's the most potentially harmful phenomenon or issue threatening our nation? Our use of torture on suspected terrorists? Hawks in the White House? If you guessed either of those, according to Oklahoma Rep. Sally Kern, you're wrong—homosexuality is America's worst scourge. Guess who won't be voting for Rep. Kern in her next bid for office?
AP photo / Oded Balilty
War creates a world without empathy. Those who have empathy cannot, as did Palestinian gunman Alaa Hisham Abu Dheim, coldly murder students in a Jerusalem library. Those who have empathy cannot drop tons of iron fragmentation bombs on crowded Palestinian refugee camps in Gaza, killing more than 120 Palestinians in a week, of whom one in five were children and more than half were civilians.
AP photo / Ahmad al-Rubaye, pool
President Bush has made his antagonism for Iran and its president well known, but in Iraq he has created a great ally for his enemy, as was clear from Mahmoud Ahmadinejad's historic visit.
AP photo / Hussein Malla
Imad Mughniyeh was once America's most-wanted terrorist, and his crimes were truly abhorrent. But his assassination, Ritter argues, will only lead to more violence.
While Pakistan steals headlines, neighboring Afghanistan offers a more realistic opportunity to crack down on the incubation of terrorists—if only the United States and other interested governments are willing to think outside the box.
The boilerplate in a candidate's speeches gets little attention because words used over and over never constitute "news." But one of John McCain's favorite lines—his declaration that "the transcendent challenge of the 21st century is radical Islamic extremists," or, as he sometimes says it, "extremism"—could define the 2008 election.
The same conservatives sending Barack Obama love notes over the airwaves are likely to smear him from every angle if he secures the nomination. Obama says he is ready. Let's hope so.
The president and other fear mongers love to harangue Americans with the specter of terrorism when their pet projects (and our freedoms) are on the line, but when it comes to the basic programs that protect us from disaster, money talks louder than threats.
The House of Representatives and Senate have now both signaled their disapproval of the CIA's use of waterboarding by voting for a ban on any techniques but the 19 officially approved by the Army, but President Bush has already, in turn, signaled his intent to veto any legislation that would rule out harsh interrogation methods.
Although some politicians and media pundits who lean toward the right of the political spectrum regard global warming as an overhyped pet issue that mostly gets liberals hot under the collar, New York City mayor and media baron Mike Bloomberg (who's moved around quite a bit on said spectrum) suggests that it is potentially much worse than the threat of terrorism. He made the comment Monday at a U.N. climate change conference.
Khalid Sheikh Mohammed, the purported mastermind behind the 9/11 terrorist attacks, and five other detainees at Guantanamo Bay are facing official charges from the Pentagon that could result in the death penalty.
AP photo / Carlos Osorio
Walid Shoebat, Kamal Saleem and Zachariah Anani are the three stooges of the Christian right. These self-described former Muslim terrorists are regularly trotted out at Christian colleges—a few days ago they were at the Air Force Academy—to spew racist filth about Islam on behalf of groups such as Focus on the Family. It is a clever tactic.
The skies won't seem so friendly to Europeans looking to travel to the U.S. soon if President Bush's list of new security demands is implemented despite the resistance and outrage it has sparked among EU officials, whose countrymen will encounter additional headaches if their leaders don't get with Bush's program.
The revival of John McCain's presidential candidacy, now expected to carry him through to his party's nomination, can be interpreted as either proof of the judgment of Republican primary voters or evidence of the paucity of alternative choices.
AP photo / Baz Ratner
Can decent Israelis, caught between complacency and conscience, save their beleaguered country from the corruptions of power, religious fanaticism and crippling hubris?
It's not enough for George W. Bush's government to eavesdrop on phone calls, monitor financial transactions and sneak a peek at other people's e-mails. Now the administration says it needs to monitor all Internet activity in the United States. That means you and everything you do online.
It's the deadliest conflict since World War II. More than 5 million people have died in the past decade, yet it goes virtually unnoticed and unreported in the United States.
AP photo / David Guttenfelder
Pervez Musharraf's recent actions remind us, Ritter argues, that America's special relationship with Pakistan serves neither country's best interests.
When Barack Obama first started running for the White House, Fox News tried to paint him with the terrorism brush. Rather than play games with the network, the Obama campaign simply blackballed Fox. Robert Greenwald's "Fox Attacks" brings us up to date after Bill O'Reilly's manhandling of an Obama staffer last weekend.
Benazir Bhutto and her supporters who died with her during the suicide attack Dec. 27 are the latest victims of decades of dangerous U.S. support for Pakistan's military regime.
The kidnap and torture program of the Bush administration, with its secret CIA "black site" prisons and "torture taxi" flights on private jets, saw a little light of day this week.
AP photo / Francois Mori
For former "60 Minutes" producer Barry Lando, Moammar Gadhafi's recent visit to France raised some important questions about the West's attitudes toward tyrants. Just whom should we embrace and whom should we flatten with a bit of shock and awe?
AP photo / Manuel Balce Ceneta
When the CIA destroyed those prisoner interrogation videotapes, was it also destroying the truth about 9/11? After all, according to the 9/11 Commission Report, the basic narrative of what happened on that day comes from the CIA's account of what those prisoners told their torturers. And what about those congressional leaders, including Democrats such as Nancy Pelosi, who were briefed on the torture program as early as 2002?
A bipartisan group of top lawmakers, including current House Speaker Nancy Pelosi, was briefed on the details of waterboarding and other interrogation techniques as early as 2002. According to several U.S. officials, over the course of roughly 30 private briefings only one objection to the practice was raised.
AP photo / Lawrence Jackson
The former chief weapons inspector argues that the Bush administration isn't going to let facts get in the way of its eagerly sought war with Iran. If there's any hope of avoiding such a conflict, Ritter writes, Congress will have to rouse from its slumber and act, rather than continuing to wait for the White House to make the first move.
"Spying Blind" author Amy Zegart gives Truthdig a status report on America's intelligence agencies and explains why our intelligence system is so broken and why our democracy may be to blame.
Rudy Giuliani likes to pretend that he's the world's greatest terrorism fighter, but it turns out that his business empire has contracted with a Qatari sheik who once helped Khalid Sheikh Muhammad escape the FBI. The Village Voice has the goods.
All but two of the nation's 43 "fusion centers," information-sharing offices set up after 9/11 to help uncover terrorist activity, have been distracted by local crime and other distinctly non-terrorist intrigue, according to a Government Accountability Office report obtained by the Associated Press. The problem, like so many facing our nation, apparently stems from the lack of funding and oversight by the Bush administration.
Presidential candidate Rudy Giuliani clearly shares a particular personality trait with President Bush: the kind of unassailable certainty that even evidence to the contrary can't uproot. Take his position on the Iraq war, for example, which he still believes—even more so, now—was the right move for the U.S. to have made.
Just in case anyone forgot that Rudy Giuliani was the mayor of New York on Sept. 11, 2001, or wondered why a former mayor thinks he's qualified to be president, the candidate has developed something of a "9/11" tick. It turns out he might not be entirely conscious of it.
AP photo / Gerald Herbert
"The war on terror" made me do it. That's the excuse that works for George W. Bush to rationalize his assaults on the rule of law, from arbitrary arrest to torture. So why not try some war-on-terror obfuscation to bail out his president-dictator buddy over in Pakistan?
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text:
Wired magazine: issue 16.09
Mashup DJ Girl Talk Deconstructs Samples From Feed the Animals
In the modern laptop era, any monkey with Pro Tools can make a mashup. But Pittsburgh-based computer maestro Girl Talk (known to the IRS as Gregg Gillis) has turned the cut-and-paste process into a jams-packed jigsaw puzzle. His latest album, Feed the Animals (released digitally in June with hard copies out September 23), brims with 300 song snippets in just over 50 minutes (compared to around 250 in his previous effort). "People want to see the bar raised," Gillis says. Below, a beat-by-beat breakdown of a single track.
* Correction: "C.R.E.A.M." is sampled from 2:29-3:12 and "Go!" from 2:19-3:24, not the other way around.


text:
LONDON, Sept. 22 /PRNewswire/ -- The 2010 Frost & Sullivan Global Technology Innovation Award in Food Ingredients is presented to Isobionics. The company offers guaranteed supply and consistent high quality of Valencene Pure™ - a natural flavour molecule for orange notes - based on a unique fermentation process.
(Logo: http://photos.prnewswire.com/prnh/20081117/FSLOGO)
(Logo: http://www.newscom.com/cgi-bin/prnh/20081117/FSLOGO)
Valencene Pure™ is produced from a new biotechnological process developed and implemented by the company through in-house research efforts. Combining fermentation with biotransformation, this innovative method addresses the issue of cost-effectively and easily producing natural flavour profiles.
"Isobionics can rightly claim to be the first company to have targeted a molecule rationally for synthesis using biotransformation technology," notes Frost & Sullivan Research Analyst Dr. Kaushik Shankar. "Isobionics' unique process has enabled the introduction of Valencene Pure™ within three years from the date of patenting the idea, indicative of the robustness of the process and the confidence of the company in the technology."
Consistent supply and high cost have been the main factors impeding the shift from synthetic flavour compounds to natural and nature identical flavours across food applications. With a nearly 10 fold decrease in anticipated cost of using Valencene Pure™ compared to orange derived valencene, the issue of cost is addressed with ease.
Moreover, the controlled fermentation method employed for production uses commonly available feedstock, glucose. Hence Isobionics can comfortably satisfy the demands for valencene worldwide with their proprietary product derived from patented technology.
"By recreating the
|SOURCE Frost & Sullivan
Copyright©2010 PR Newswire.
All rights reserved


text:
Kidsnett Day Care
Spring Valley, NY 10977
(845) 290-0411
About This School
Kidsnett Day Care is located in Spring Valley, NY. Kidsnett Day Care has a capacity of 72 children.
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Kidsnett Day Care Reviews
Good to watch your kids not toeducate them
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I wouldn't recommend this school at all. If your child needs referrals, assistance , help in any form or way go look elsewhere.
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