text:
|Publication number
|Publication type
|Application number
|Publication date
|Oct 5, 1999
|Filing date
|Aug 19, 1997
|Priority date
|Dec 9, 1996
|Fee status
|Also published as
|Publication number
|Kuo-Tung Sung, Wen-Ting Chu, Huoy-Jong Wu
|Original Assignee
|Mosel Vitelic, Inc.
|Export Citation
|BiBTeX, EndNote, RefMan
|Patent Citations (12), Referenced by (25), Classifications (18), Legal Events (7)
|External Links: USPTO, USPTO Assignment, Espacenet
This invention relates to the fabrication of E2 PROMs and flash memory cells in general, and more particularly to the fabrication of E2 PROM or flash memory cells having built-in silicon tips or wedges for the erasure of electric charges in the floating gate of the memory cells.
Read-only memory (ROM) is a semiconductor memory device containing fixed data patterns determined at fabrication. Because changing a single bit in the stored data would require alteration of the entire circuit and its fabrication, ROMs are often made using a process called mask programming, by which data is typically stored in the ROM at one of the final process steps. The economic advantage of a mask ROM is obvious: all ROMs may be fabricated similarly, and customization takes place only during one of the process steps.
In contrast to conventional ROMs or mask ROMs in which the data must be stored in the device during fabrication, a programmable read-only memory (PROM) allows the user to electrically program the data into the memory. However, a conventional PROM cell can be programmed only once. For example, a typical arrangement employed in a bipolar-junction transistor (BJT) PROM involves the use of polysilicon fuses to connect the emitter the corresponding digit line. Depending on the desired content of the memory cell, the fuses are either left intact or blown open by a large current during programming. Obviously, such a programming step is irreversible.
To improve the conventional non-erasable PROM, several erasable semiconductor memory cells have been developed, including the erasable read-only memory (EPROM), the electrically alterable read-only memory (EAROM), the electrically erasable read-only memory (EEPROM or E2 PROM), E2 PROM-EAROM, and the nonvolatile static random-access memory (SRAM). Each of these erasable semiconductor memory cells may be used in a variety of applications. For example, low-density EAROMs (less than 8k) can be used in consumer radio tuners and automotive engine controllers.
A typical way to achieve nonvolatile data storage in the above erasable or alterable programmable memory cells is to use a floating gate, typically located between a control gate and a substrate and capable of holding electrical charges for an indefinite period of time. The control gate and the floating gate are typically made of the same material, e.g., polysilicon, while the substrate generally has a lightly doped source and drain region. When carrying no charges, the floating gate has no influence on the electrical field generated by the control gate in the channel region between the source and the drain. However, if the floating gate is charged with electrons, these electric charges in the floating gate will generate in the channel region an electrical field opposite to the field generated by an active control gate. Thus, if an active signal at the control gate cannot generate a sufficiently strong field to turn on the memory transistor, the transistor will store the value "0." Only with a much higher control gate potential can the memory transistor be turned on and store the value "1". In other words, the field of the control gate must be strong enough to compensate the field of the floating gate and to make the channel between the source and the drain conductive.
To reprogram a conventional EPROM, the electrons in the floating gates are erased by exposure to an ultraviolet (UV) irradiation. Electrons in the floating gates are energized by the UV light and are thus able to leave the floating gates. Nonetheless, to enable the memory chip to be exposed to UV radiation, the package of an EPROM (usually made of ceramics) must have a window made of a material transparent to UV, e.g., quartz glass. In addition, the electric charges in a whole EPROM array are erased all at once, dictating a time-consuming reprogramming process at all the array cells.
Some of the above limitations of the EPROM may be overcome by the use of an E2 PROM, in which the electric charges in a floating gate can be electrically erased. A cross-sectional view of a typical prior-art stacked-gate E2 PROM device having two layers of polysilicon is shown in FIG. 1. The substrate 10 is a single-crystal silicon substrate. An active region is defined by an insulating field oxide (FOX) region 12. A first silicon dioxide layer is formed on the substrate 10 as the tunnel oxide layer 14. A first polysilicon layer deposited and lithographically patterned on the tunnel oxide layer 14 to form a floating gate 16. A second silicon dioxide layer is deposited on the floating gate 16 to form an insulating layer 18. Both oxide layers are typically approximately 50 nm thick. A second polysilicon layer is then deposited by a chemical vapor deposition (CVD) process and lithographically patterned on the insulating layer 18 to form a control gate 20. Finally, source 22 and drain 24 regions are formed in the substrate by ion implantation. An n-doped drain 24 and a p-doped substrate 10 thus form a p-n junction in the substrate 10.
An E2 PROM may be programmed in the same way as an EPROM, e.g., through hot electron injection generated by a voltage pulse between the control gate 20 and the drain 24. In this process, electrons generated in the drain 24 traverse the tunnel oxide layer 14 and accumulate in the floating gate 16. Alternatively, the floating gate 16 may be charged by an avalanche injection mechanism, by which electrical potentials are applied to cause high-energy electrons in the channel region between the source 22 and the drain 24 to be injected across the insulating tunnel oxide layer 14 into the floating gate 16.
To erase the E2 PROM, an inverse voltage is typically applied between the control gate 20 and the drain 24. As a result, the electrons in the floating gate 16 travel across the tunnel oxide 14 layer into the drain 24; the stored data is thus erased. It is important that this discharge process does not last too long, otherwise too many electrons will tunnel out of the floating gate 16, making it positively charged. Conventional E2 PROMs have several advantages including byte erase, byte program and random access read capabilities. However, such memory cells generally call for two transistors per bit: a memory transistor and a select transistor, resulting in a relatively large cell size.
Another erasable, nonvolatile memory cell is the flash memory cell, in which the contents of all memory array cells can be erased simultaneously through the use of an electrical erase signal. Flash memories are based on either the EPROM or E2 PROM technology; the selection between the two requires tradeoffs between the higher density of the EPROM technology and the in-circuit programming flexibility of the E2 PROM technology. The structure of a flash memory cell is essentially the same as that of an EPROM or E2 PROM cell, except that the tunnel oxide in a flash memory cell is thinner than that of an E2 PROM memory cell, thus allowing lower program and erase voltages to be applied between the control gate and the drain. Flash memories have the capability of electrical program, read, and data storage in a memory cell. Although a flash memory does not permit bit-by-bit erasure, it can be electrically programmed and erased in a block-by-block manner.
Although the above prior-art E2 PROM or flash memory technology have solved a number of problems associated with prior-art EPROMs, several problems still exist during the erasure of stored information in a prior-art E2 PROM or flash memory cell. First, the typical thickness (approximately 10 nm) of the tunnel oxide layer 14 of EEPROM and flash memory cells does not allow the use of a conventional E2 PROM power supply to generate an adequate Fowler-Nordheim tunneling current for fast erasure. Second, the use of a higher electrical potential (and hence a higher erasure current) may cause junction breakdown, leading to excessive substrate current during erasure. Third, electrical holes generated by the band-to-band leakage current may be trapped in the tunnel oxide, resulting in the degradation of the tunnel oxide layer.
It is therefore an object of the present invention to provide a semiconductor E2 PROM or flash memory essentially free of junction breakdown.
It is another object of the present invention to provide a semiconductor E2 PROM or flash memory cell comprising a structure capable of generating a high electric field for the erasure of electrical charges in the memory cell.
It is a further object of the present invention to provide a semiconductor E2 PROM or flash memory comprising a floating gate having a silicon tip or wedge, which generates a high electric field that can be used to erase the electric charges in the floating gate.
In a specific embodiment of the present invention, a semiconductor E2 PROM or flash memory cell comprising a floating gate having a silicon tip or wedge is fabricated in accordance with the following steps:
forming active regions separated by field oxide regions on a semiconductor substrate;
forming a first insulating layer on an active region through, e.g., a thermal oxidation process;
sequentially depositing a first polysilicon layer and a second insulating layer on the first insulating layer;
forming a first gate on the first insulating layer by lithographically patterning the first polysilicon layer and the second insulating layer and exposing portions of the first insulating layer;
over-etching the exposed portions of the first insulating layer to expose portions of the substrate and to form a recess underneath the first gate through, e.g., a wet etching process or a dry etching process;
forming a third insulating layer on the exposed surfaces of the substrate and the first gate through, e.g., a thermal oxidation process;
depositing a second polysilicon layer on the second and third insulating layers through, e.g., a CVD process and allowing the second polysilicon layer to fill the recess to form a sharp tip or wedge under the first gate;
forming a second gate by etching the second polysilicon layer through, e.g., a lithographic etching process;
forming a fourth insulating layer on the second gate;
depositing a third polysilicon layer on the fourth insulating layer; and
forming a third gate by etching the third polysilicon layer through, e.g., a lithographic etching process.
An advantage of the present invention is that it provides an improved E2 PROM or flash memory in which junction breakdown during data erase is essentially avoided.
Another advantage of the present invention is that it provides an improved E2 PROM or flash EPROM in which tunnel oxide layer degradation is largely avoided.
These and other objects, features and advantages of the present invention will become apparent to those skilled in the art after reading the following detailed description of the preferred embodiment which is illustrated in the several figures of the attached drawings.
FIG. 1 is a cross-sectional representation of a prior-art E2 PROM cell.
FIG. 2 is a cross-sectional representation of the device of the present invention during fabrication after the step of forming a field oxide region.
FIG. 3 is a cross-sectional representation of the device of the present invention during fabrication after the step of forming a first insulating (oxide) layer.
FIG. 4 a cross-sectional representation of the device of the present invention during fabrication after the step of forming a first gate covered by a second insulating layer.
FIG. 5 is a cross-sectional representation of the device of the present invention during fabrication after the step of forming a recess in the first insulating layer underneath the first gate.
FIG. 6 is a cross-sectional representation of the device of the present invention during fabrication after the step of forming a silicon dioxide layer on the exposed surfaces of the substrate and the first gate.
FIG. 7 is a cross-sectional representation of the device of the present invention during fabrication after the step of forming a second gate.
FIG. 8 is a cross-sectional representation of the device of the present invention during fabrication after the step of forming a third insulating layer, a third gate, and doped source and drain regions.
While the present invention may be embodied in many forms, details of the preferred embodiments at various stages of fabrication are schematically shown in FIGS. 2 through 8, with the understanding that the present disclosure is not intended to limit the invention to the embodiment illustrated.
The present invention discloses a new E2 PROM or flash memory structure and a semiconductor process for fabricating such a structure. The new process allows the formation of a silicon tip or wedge as an integral part of one of the gates, e.g., the floating gate. This silicon tip or wedge is capable of producing a high electric field to remove the electric charges in the floating gate during memory erasure. The new structure of the present invention avoids the problem of junction breakdown, the need for high erasure currents, and the progressive degradation of tunnel oxide layer, all of which may be present in a prior-art E2 PROM or flash memory structure.
In a specific embodiment of the present invention, an E2 PROM or flash memory cell having three polysilicon layers is fabricated by the process described below. As shown in FIG. 2, a cross-sectional view of the device of the present invention at an early stage of fabrication, a single-crystal silicon, e.g., Si<100>, is conveniently chosen as the device substrate 40. Selected portions of the surface of the substrate 40 are oxidized to form field oxide (FOX) regions 42, two of which are shown in FIG. 2. These FOX regions 42 define an active region 43 by electrically isolating the latter region from the surrounding surface regions of the substrate 40. The FOX region 42 may be formed partially or completely inset into substrate 40. Typically, FOX regions 42 are formed by a process comprising the following steps: (i) depositing a mask layer comprising a composite layer of silicon nitride (Si3 N4) and silicon dioxide (SiO2) on the substrate 40; (ii) patterning the composite layer using photolithographic etching; (ii) removing the photoresist layer; and (iii) forming FOX regions 42 by thermally oxidizing the exposed portion of substrate 40 using the patterned composite layer as the etching mask (the FOX regions 42 thus formed are preferably 400 to 600 nm thick); and (iv) removing silicon nitride by hot phosphoric acid and removing silicon dioxide by hydrofluoric acid. Other isolation schemes known in the art, e.g., the shallow trench isolation (STI) process, can also be used to form the FOX region.
Next, as shown in FIG. 3, a first insulating layer 44, preferably having a thickness between approximately 5 and 50 nm, is formed on an active region 43 of the substrate 40. Preferably, the insulating layer 44 is a silicon dioxide formed by a thermal oxidation process in which the substrate 40 is heated in an oxygenated gas environment at approximately 850� to 1000� C. Such a process is well-known in the art.
Next, a first silicon layer (not shown) is deposited on the FOX regions 42 and the first insulating layer 44. This first silicon layer is preferably a polycrystalline silicon (or polysilicon) layer deposited by chemical vapor deposition (CVD) or low-pressure chemical vapor deposition (LPCVD), and is preferably between approximately 50 and 500 nm thick. Alternatively, an amorphous silicon layer can be used in lieu of the polysilicon layer. This first silicon layer, once properly patterned using known techniques (see FIG. 4), will form a first gate, e.g., a select gate, of a E2 PROM cell. A second insulating layer (not shown) is subsequently deposited on the first silicon layer. Preferably, this second insulating layer is silicon dioxide formed by chemical vapor deposition (CVD) or thermal oxidation, and is preferably between approximately 5 and 200 nm thick. Alternatively, a CVD silicon nitride layer or a combination of oxide and nitride layers can serve as the second insulating layer. The first silicon layer and the second insulating layer are then lithographically patterned to form a first gate 46 and an insulating layer 48 on top of the first gate 46 as shown in FIG. 4. Typically, a substantial part of the active region 43 is now covered only by the first insulating layer 44 but not by the first silicon layer or the second insulating layer.
Next, an etching process is used to remove the exposed portions of the first insulating layer 44, forming a recess 50 underneath the first gate 46. The insulating layer 48 is protected by a masking layer, e.g., photoresist (not shown) during this etching process. Preferably, recess 50 is formed by either a wet etch process employing, e.g., hydrofluoric acid or buffer oxide etch (BOE) or an isotropic dry etch process using, e.g., CF4 and O2. Such etching processes are well-known in the art. Recess 50 is preferably approximately 2 to 100 nm long measured from the edge of the first gate 46. FIG. 5 shows the device of the present invention during fabrication after recess 50 is formed.
Next, a third insulating layer 52 is formed on the exposed portions of substrate 40 as well as on the exposed surfaces of the first gate 46. FIG. 6 is a cross-sectional representation of the device of the present invention after the formation of the third insulating layer 52. Preferably, this third insulating layer 52 is a silicon dioxide layer formed by thermal oxidation, e.g., heating the substrate in an oxygenated gas environment at approximately 750 to 950� C. Because of the different oxidation rates, the thickness of thermal oxide 52a grown from substrate 40 may be different from the thickness of thermal oxide 52b grown from the first gate 46. Preferably, the range of thickness of the third insulating layer 52 is between approximately 5 and 50 nm. A cavity 53 is formed between the oxide 52a on substrate 40 and the oxide 52b underneath the first gate 46. The cavity 53 may be extended substantially along the length of the recess 50. Typically, the height of cavity 53 varies according to position and may range approximately between 3 and 50 nm.
Next, a second silicon layer (not shown) is formed on the second insulating layer 48 and the third insulating layer 52. Preferably, this second silicon layer is a polysilicon layer formed by either CVD or LPCVD and is approximately between 30 and 500 nm thick. Alternatively, the second silicon layer can be an amorphous silicon layer. This second silicon layer, once lithographically patterned using known techniques, forms a second gate, e.g., a floating gate 54 as shown in FIG. 7. The second silicon deposition process also forms a sharp tip or thin wedge 55 (as viewed in three dimensions) filling the cavity 53. This thin wedge or sharp tip 55 is an integral part of the second gate 54 and is capable of generating a high electric field that can be used to erase the electrical charges in the second gate 54.
Finally, a fourth insulating layer 56 is formed on the second gate 54 and typically on a portion of the second insulating layer 48. This fourth insulating layer 56 is typically a silicon dioxide or nitride layer (or a combination of the two) approximately 10 to 100 nm thick. A third silicon layer 58 is subsequently formed and lithographically patterned using known techniques on the fourth insulating layer 56 to become a third gate, e.g., a control gate 58. Preferably, this third silicon layer 58 is a polysilicon layer deposited by a CVD or LPCVD process and is approximately 50 to 500 nm thick. An amorphous silicon layer can be used in lieu of the polysilicon layer. Suitable dopant ions (e.g., P or As) are then implanted in the exposed portions of the active region 43 to form a doped source 60 and a doped drain 62, completing the fabrication of the E2 PROM device.
In the aforesaid embodiment of the present invention, the first, second and third gates are, respectively, a select gate, a floating gate and a control gate. Other combinations are possible in accordance with specific designs of the memory cells. For example, the first gate may be a floating gate, the second gate may be an erase gate, and the third gate may be a control gate. The present invention is not limited to floating-gate tunnel-oxide E2 PROMs, nor is it limited to the generation of one silicon tip or wedge per cell. For example, the present invention can be readily adapted to textured-polysilicon E2 PROMs in which a memory cell includes three layers of polysilicon that partially overlap; i.e., poly 1, poly 2 (the floating gate) and poly 3. Thus, either poly 2 or poly 3 or both may have a silicon tip or wedge that facilitates the erasure of electrical charges stored in the floating gate.
The present method of fabrication may be used in the fabrication of a flash memory or E2 PROM cell having two polysilicon (or amorphous silicon) layers. This two-silicon-layer fabrication process is essentially similar to the three-silicon-layer process described above in FIGS. 2-8. Typically, in a two-silicon-layer flash memory or E2 PROM cell, the first silicon layer will form a first gate, e.g., a floating gate, while the second silicon layer will form a second gate, e.g., a control or select gate. According to the present invention, the second gate can be made to have a silicon tip or wedge for the purposes of erasure. Finally, doped source and drain regions can be formed by ion implantation.
While the invention has been particularly shown and described with reference to the above preferred embodiment, it will be understood by those skilled in the art that many other modifications and variations may be made thereto without departing from the broader spirit and scope of the invention as set forth in the claims. Use of the disclosed method is not limited to E2 PROMs, but may also be used in fabricating other types of memory devices, e.g., a flash memory. The specification and drawings are accordingly to be regarded as being illustrative, rather than being restrictive.
|Cited Patent
|Filing date
|Publication date
|Apr 22, 1983
|Jan 29, 1985
|Tokyo Shibaura Denki Kabushiki Kaisha
|Method of integrating MOS devices of double and single gate structure
|Jan 23, 1986
|Jun 2, 1987
|Rockwell International Corporation
|Method for producing a field effect transistor
|May 12, 1987
|Jan 3, 1989
|Harris Corporation
|Self-aligned contact for MOS processing
|May 24, 1989
|Jan 29, 1991
|Mitsubishi Denki Kabushiki Kaisha
|Method of manufacturing non-volatile semiconductor memory device
|Dec 26, 1991
|Jul 6, 1993
|Electronics And Telecommunications Research Institute
|Manufacturing method of self-aligned GaAs FET using refractory gate of dual structure
|Aug 7, 1991
|Dec 21, 1993
|Mitsubishi Denki Kabushiki Kaisha
|Field effect transistor with T-shaped gate electrode and manufacturing method therefor
|Jul 30, 1993
|Oct 4, 1994
|Atmel Corporation
|Method for forming thin tunneling windows in EEPROMs
|Oct 11, 1994
|Aug 29, 1995
|United Microelectronics Corporation
|Method of manufacturing EEPROM memory device with a select gate
|Nov 25, 1994
|Aug 27, 1996
|Method of fabricating self-aligned FET structure having a high temperature stable T-shaped Schottky gate contact
|Mar 22, 1996
|Oct 7, 1997
|Hyundai Electronics Industories Co., Ltd.
|Method of making flash EEPROM cell having first and second floating gates
|May 20, 1997
|May 26, 1998
|Vanguard International Semiconductor Corporation
|Method of fabricating an EPROM cell with a high coupling ratio
|Dec 30, 1996
|Jun 30, 1998
|Lg Semicon Co., Ltd.
|Method for manufacturing self-aligned T-type gate
|Citing Patent
|Filing date
|Publication date
|Apr 16, 1998
|Nov 7, 2000
|Worldwide Semiconductor Manufacturing Corp
|Method for manufacturing split-gate flash memory cell
|Oct 5, 1998
|Dec 26, 2000
|Taiwan Semiconductor Manufacturing Company
|MONOS flash memory for multi-level logic and method thereof
|Jul 9, 1999
|Mar 20, 2001
|Advanced Micro Devices, Inc.
|Method of forming select gate to improve reliability and performance for NAND type flash memory devices
|May 15, 2000
|May 15, 2001
|Integrated Memory Technologies, Inc.
|Method of making a floating gate memory cell
|Mar 5, 1999
|Dec 18, 2001
|Mosel Vitelic Inc
|Memory cell with built in erasure feature
|Dec 17, 1997
|May 14, 2002
|Advanced Micro Devices, Inc.
|Method and system for providing localized gate edge rounding with minimal encroachment and gate edge lifting
|May 23, 2001
|Oct 22, 2002
|Nec Corporation
|Flash memory device with an inverted tapered floating gate
|Aug 11, 2000
|Nov 12, 2002
|Sanyo Electric Co., Ltd.
|Laser transceiver system controller
|Nov 30, 2000
|Nov 12, 2002
|Atmel Corporation
|Method of fabricating a self-aligned non-volatile memory cell
|Jan 3, 2000
|Feb 11, 2003
|Advanced Micro Devices, Inc.
|Deposited screen oxide for reducing gate edge lifting
|Aug 20, 2002
|Apr 8, 2003
|Chartered Semiconductor Manufacturing Ltd.
|Method to form an asymmetrical non-volatile memory device using small in-situ doped polysilicon spacers
|Sep 6, 2002
|Sep 23, 2003
|Atmel Corporation
|Method of fabricating a self-aligned non-volatile memory cell
|Oct 1, 2001
|Nov 25, 2003
|Micron Technology, Inc.
|Method and structure for an oxide layer overlying an oxidation-resistant layer
|Sep 3, 2002
|Dec 30, 2003
|Nec Electronics Corporation
|Method of making a flash memory device with an inverted tapered floating gate
|Dec 20, 2002
|Dec 14, 2004
|Atmel Corporation
|Multi-level memory cell with lateral floating spacers
|Apr 17, 2001
|Mar 7, 2006
|Nec Electronics Corporation
|Non-volatile semiconductor storage apparatus with overlapping gates and manufacturing method thereof
|Jun 29, 2005
|Sep 4, 2007
|Samsung Electronics Co., Ltd.
|Non-volatile memory having multiple gate structure
|Jan 27, 2006
|Jan 17, 2012
|Atmel Corporation
|Security method for data protection
|Nov 25, 2003
|Jun 17, 2004
|Rudeck Paul J.
|Method and structure for an oxide layer overlying an oxidation-resistant layer
|Jun 15, 2005
|Dec 22, 2005
|Yoo Jong-Ryeol
|Methods of forming gate patterns using isotropic etching of gate insulating layers
|Jun 29, 2005
|Apr 13, 2006
|Kang Sung-Taeg
|Non-volatile memory and method of fabricating same
|Jan 27, 2006
|Nov 9, 2006
|Melton Randall W
|Security method for data protection
|Jul 7, 2005
|Sep 9, 2008
|Atmel Corporation
|Self-aligned non-volatile memory cell
|Aug 20, 2003
|Feb 25, 2004
|Chartered Semiconductor Manufacturing Pte Ltd.
|A method of forming a sharp tip on a floating gate in an asymmetrical non-volatile memory device using small in-situ doped polysilicon spacers
|Oct 15, 2001
|Jun 6, 2002
|Atmel Corp
|Self-aligned non-volatile memory cell
|U.S. Classification
|International Classification
|Cooperative Classification
|European Classification
|Feb 26, 1999
Owner name: MOSEL VITELIC, INC., TAIWAN
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:CHU, WEN-TING;WU, HUOY-JONG;SUNG, KUO-TUNG;REEL/FRAME:009786/0017;SIGNING DATES FROM 19970424 TO 19970426
|Apr 2, 2002
|Certificate of correction
|Mar 4, 2003
|Fee payment
Year of fee payment: 4
|May 24, 2004
|Apr 5, 2007
|Fee payment
Year of fee payment: 8
|Apr 11, 2011
|Fee payment
Year of fee payment: 12
|Apr 11, 2011
|Surcharge for late payment
Year of fee payment: 11


text:
Sketchbook from Robert Lawson's WWI deployment in...
During World War I, Robert Lawson served in France as a sergeant in the US Army's camouflage unit. Page 2 of the sketchbook is blank.
Search our Digital Collections
The guides listed below emphasize the holdings of the Free Library of Philadelphia and give brief descriptions of the holdings of other Philadelphia repositories. Keep in mind that some Philadelphia repositories have vast and unique holdings that can only be appreciated through an on-site visit. Items listed on the guides that are available at the Free Library are indicated by a call number. See the online catalog for the location of this material.
Genealogical Resources at the Free Library
Censuses and Census Substitutes, including tax records
Biographies, Autobiographies, and Diaries
Genealogies - Published and Unpublished
Birth Information
Marriage Information
Death Information
Newspapers and Indexes
Military Records
The Published Pennsylvania Archives
Passenger Lists, Immigration and Emigration Information, Naturalizations, Oaths of Allegiance, and Passports
Land and Probate records, Maps and Photographs, Property Histories
Government Publications, Laws, and Case Reporters
Local libraries, Archives, and Other Repositories

subset: commoncrawl


text:
Blogs Cliopatria What Is the Army War College?Jun 4, 2004 1:07 pm
What Is the Army War College?
Sam Schechner, in Slate (May 25, 2004):
The War College is the Army's top leadership school; it grants a"master of strategic studies" degree to senior military and civilian leaders who complete the requirements of its 10-month on-campus courses or its two-year correspondence course. It's actually one of five war colleges in the country—the Navy and Air Force have one apiece, and the Pentagon directly operates twoothers that are part of the National Defense University.
War colleges are the top finishing schools for military minds, and the Army's comprises a variety of units, including the Advanced Strategic Art Program and the Strategic Studies Institute, which foster military research when they're not awarding degrees. One recent SSI paper argues that America does not have its own"way of war" and advocates"a fundamental rethinking … of the grammar and logic of war."
The Army handpicks most of the approximately 340 students who attend each year, but there are always some from the other armed services, too—including, usually, one from the Coast Guard. The student body also includes civilians from the Pentagon, State Department, and National Security Agency, along with about 40 senior officers from foreign countries such as Saudi Arabia, Israel, and New Zealand.
Since it was founded in 1901, the Army War College has had some notable graduates, such as President Dwight D. Eisenhower, who graduated first in his class as a captain in 1928; Gen. Norman Schwarzkopf; and Gen. Tommy Franks. Bush's visit, however, marks the first time a sitting president has stopped by since before the college moved to the Carlisle Barracks in 1951.
comments powered by Disqus
More Comments:
Joseph Fitzharris - 6/4/2004
There is one war college this missive missed. The Marine War College at Marine Corps University on MCB Quantico, VA.
- From Germany to Mexico: How America's source of immigrants has changed over a century
- Scholars doing oral history are finally off the hook! The federal government has granted them an exemption from IRBs
- Confederate Flag Supporters Indicted Under Georgia's Anti-Gang Law
- One of King Henry V's 'great ships' likely found in England
- Georgia's Stone Mountain to be topped by MLK tribute
- Tim Naftali: declassified documents reveal a cunning and cagey president
- Call to help Moroccan historian Maâti Monjib, who has been on hunger strike since 6 October 2015
- Charles Gillispie, trailblazer in the history of science, dies at 97
- NYT History Book Reviews: Who Got Noticed this Week?
- NC student's senior thesis selected as top paper sheds light on little-known victory over Jim Crow


text:
Pink Floyd & Syd Barrett Story Expanded For Reissue
The new release will feature Dolby Digital Stereo, will include some additional bonus material and will run for 214 minutes. We were sent over the following synopsis for the film:
The Pink Floyd & Syd Barrett Story explores the tragic, yet celebratory life of the late Syd Barrett, lead guitarist and prominent songwriter of early Pink Floyd. With contributions from all members of Pink Floyd, as well as managers, friends, and others close to Syd, the documentary traverses the tale of this enigmatic rock legend, from his intelligent, thought-provoking songwriting and indelible stamp on the psychedelic music genre, to his 1968 departure from the band, when his increasingly erratic behavior made his continued participation in the band impossible. This 2DVD set also includes the additional interview "Roger Waters On Syd Barrett," and a second disc with bonus uncut interviews with Roger Waters, David Gilmour, Nick Mason, and Richard Wright, and a performance of "Love You" by Graham Coxon.
Pink Floyd was revolutionary, pushing popular music into new cerebral dimensions, and Syd Barrett was an integral part of the band's sound and lyrics. A charismatic cult figure with a flair for eccentricity, he crafted such unique hits as "See Emily Play" and "Arnold Layne," as well as album tracks such as "Bike" and "Astronomy Domine." His use of dissonance, feedback, and distortion in his guitar playing has inspired generations of musicians. After leaving Pink Floyd, he recorded two solo albums before vanishing from music altogether, retiring to his English hometown of Cambridge. Fans and reporters continued to travel there to seek out the reclusive Barrett until his death in 2006, at the age of 60.
Pink Floyd T-shirts and Posters
Pink Floyd T-shirts and Posters
Share this article


text:
Venus Hotel & Suites
No prices found through our partners. Please contact the business directly or check some of our recommended alternatives.
How has this hotel rated in the past?
- Airport Transportation
- Suites
- Continental Breakfast
- Concierge desk
- Non-smoking rooms
- Restaurant
Travelers also recommend:
Historical Traveler Reviews Venus Hotel & Suites Kalamaki
Great hotel in excellent position
just got back from second visit to this family run hotel.It is part way through a 1 million euro revamp with beautiful new bathrooms with power showers,new bar with all new seating,retiled and newly refurnished pool areas.It is to have all new bedroom furniture and full room internet access next year.
The family and staff in this hotel are terrific and cannot do too much for you.It is essential to book direct with the hotel(see website) as you get free airport transfers,free fridge,free aircon and free safe deposit box.Also free membership of Venus club which gives you a 10% reduction on EVERYTHING you buy in hotel.
Must mention snack bar which does a super selection of snacks and meals at great prices(especially with the discount).
Hotel is well situated for the restaurants bars and beach with a taxi rank at top of road if you wish to go further afield.
All in all an excellent base and we have already rebooked for next year.
We Just got back from a week in Kalamaki at the Venus Hotel. We wanted a cheapie in the sun for a week and that is basically what we got. The Venus is ok but a week is enough, breakfast is a bit bland to say the least. We have read many good reports about the Venus so i guess it comes down to ones personal tastes at the end of the day.
On a plus, we can reccomend The Mermaid restaurant on the main strip. The food is fabulous as are the portions, we saw no reason to go elsewhere in the evening for the duration of our stay in Kalamaki. If you visit this establishment be sure and say Hello to Miss Niottingham and Miss Wolverhampton, two of the most pleasant waitresses you could care to meet, just ask Miss Nottingham about her "big doggy", it may jolt her memory.
Mike & Helen
Since the compensation that we receive for our services is very low from the tour operators in the month of May, it has a direct affect on our breakfast.
On the other hand as we progress into the season the quantity of breakfast increases due to a higher budget.
I thank the guest for his or her observations.
Kind regards
Nick Paleothodoros
Service Manager
Der Beste entspannede Urlaub
Komme gerade zur�ck. Die Angestellten h�tten nicht freundlicher und hilfsbereiter sein k�nnen, der Ort ist sehr sauber und ordentlich. Es liegt sehr nahe zum Strand und vielen Bars und Restaurants. Wir haben einen Bootsausflug gemacht und Meeresschildkr�ten gesehen, dass war echt toll. K�nnen es kaum erwarten, n�chstes Jahr wieder hinzukommen.
Hotel for Lovers!!
The Hotel Venus really is the Hotel of Love. To start with the room was spacious, clean and had a lovely balcony. The staff especially the maids were very friendly and helpful.
The buffet style breakfast was fairly basic, but more than enough to get you going for the day. There was cereal, eggs, toast, baked beans, fruit and tea and coffee. Plenty of seating and food - which was fresh and hot.
The pool area was a tad on the small side, but there was enough sunbeds to go around. The bar serves snack food such as hotdogs and the service as always was impeccable. Please do go to the hotel's Greek Night. So much food, booze and fun!!
The beach was amazing. Secluded, clean and beautifully golden. Its about a 15 min trek, but well worth it.
The resort of Kalamaki is literally a 3 minute walk from hotel. It has lots of traditional tavernas, all reaonably priced, and a few bars. In a nutshell, the nightlife is fairly low key, but some of the bars stay open until around 4am, but don't worry, you won't hear a thing from your hotel. There are plenty of souvenir shops and a supermarket, but if you want more shopping grab a taxi to Zakynthos Town. Its only 15 mins away and is a beautiful town.
The hotel Venus is definetely the place for couples of all ages seeking a romantic getaway. Not the place for families with young kids. I didn't see a child under the age of 12 the whole two weeks! Kalamaki is lively but not full of loutish clubbers.
I would go back in a heartbeat, it was simply divine.
Nice ppl and decent hotel
we booked this hotel/holiday as a lastminute deal and were very pleasantly surprised. i agree with most previous posts, nice hotel, exceptional staff. basic breakfast and very warm welcome.
kalamaki is a nice town and around 15 to20 good restuarants, I'd recommend dias, artamis, and mermaid, but didnt have a bad meal anywhere. town was well suited to mature folks, not that many kids about. Dont bother to take the bus option from the airport with your toure operator, get a taxi its half the price and get to the hotel 30 minutes before everyone else. ask the taxi driver for a price first though as they can be quite imaginative in their final charge, should be around 10 euros in each direction from the hotel.
if you want clubs etc then get a taxi to laganas 3 km down the road or 45 minutes strole along the beach. which caters more for the 18-30 crowd but still worth a visit. also 4 km away is Zakynthos town also about 8 euro in a taxi. if you get a chance visit a town about 20 minutes drive away called Keri ..lovely little village on the most scenic coast, typical greek postcard stuff
only negative point i could make is regarding some people that should be ashamed of themselves, and have abandoned the family pets which have turned into strays, very friendly strays but heartbreaking.
Fantastic, hotel for the money.
We booked this directly through the hortels own website - Just google it, and paid half up front as a deposit, and it was a bargain.
With flights (through a airline search site) we paid at least �200 per person less than the brochure (Thomson) price, plus Air con, safety deposit, and fridge were all free, about an extra �180 for two weeks if you go through a tour operator. Also we could get into our room on arrival 6am and stay at no extra cost till we left 3am, whereas Tour operator residents only had the 13 nights and would have to pay extra for a room on their last night.
I was reticent to go direct as it was my first time doing so, but Nick the manager was quick to reply in correspondence, friendly and helpful ( just as he is in real life)
The hotel is very nice and typically greek, rooms clean but not especially luxorious, but v.nice all the same. Pool clean and pleasant, bar nice, cocktail of the day was great.
Breakfast is included but basic, use the hundreds saved to buy breakfast if its important to you.
All other staff were very friendly, even at 4-5 in the morning, if you are leaving / arriving then. taxi to and from the airport is only �7 so don't be tempted to go on a coach laid on by the tour operator you book your flight with.
Kalymnos isn't the nicest resort I've been to but theres a friendly bunch of locals, lovely beach/sea - We saw many turtles as we were in the sea for hours, amazing creatures. in fact the only drawback of the venus for me is that its in Kalymnos, but don't let me put you off I think its one of those resorts you have to make your own mind up about.
Lovely Place
The hotel is family run and all the staff are friendly and the service was great! The rooms were always clean and the hotel overall was always kept to an excellent standard. The breakfast was buffet style, mainly continental but there were some hot food items. The pool bar had a good menu with breakfast items if you miss the 10am deadline for the buffet.
We travelled with Thomson and our only complaint is that we had to pay extra for the hire of the fridge and air conditioning, where as if you book direct with the hotel through their website all this is included and they pick you up from the airport. Will definetely be returning but will go to the hotel direct rather than through a travel agency. Prices are much cheaper and you get all the additional extras for free!
The resort of Kalamaki is great for all ages, there are plenty of restaurants and bars and if you want something livelier Laganas is only a short taxi ride away. Recommend the turtle spotting trips which can be booked at places on the main Kalamaki strip. Only saw a few turtles but stopped of at a few secluded beaches which were stunning.
Best relaxing holiday ever
Just arrived back staff could not have been more helpful, place very claen and tidy. Very close to the beach and also close to restaurants and bars. Went on a great boat trip and saw about 10 loggerhead turtles it was brill. Cannot wait to return there next year.
Charming, pleasant & welcoming hotel
Just got back 14th June 04 from Kalamaki in Zante.
My daughter and me were on a Thomson Pricebreaker deal so were not sure which hotel we would end up at. Fortunately, it was the Venus Hotel. First impressions were good, lovely entrance with well established gardens. The pool was just a nice size and there were plenty of sunbeds to go at. The family who run it are all very friendly (greek/american). The rooms, although basic, were clean - we had a ground level room and our balcony was straight out onto a garden area. It was bed & breakfast, which consisted of a very simple breakfast of cereal,toast,jam,cake,peaches, cheese slices, sliced meat, tea & coffee. Some days there were hard boiled eggs and melon pieces - if you wanted a more hearty british brekkie, then you could buy one. The pool snack bar was good to eat at whislt lazing at pool side. Occasional evening entertainment consisted of big screen movies, a greek night (where the bbq was delicious), a quiz night and of course the football was on too with snacks available. It is situated in an ideal position with just a short walk to the beach, bars and restaurants.
I would say the Venus is a safe bet if you want to stay in Kalamaki - most enjoyable, loved every minute!!
TripAdvisor Reviews Venus Hotel & Suites Kalamaki
Travel Blogs from Kalamaki
Exploring the Island and Last Days
... seeing as how technology doesn't usually work for us lol). Of course that didn't work either and we were lost after only 10 minutes. So we decided to turn on our navigation and give it another go! (It sounds so much better saying 'the Sat Nav didn't work' rather than 'we couldn't read the map' hahaha).
We managed to get ourselves around through all these little villages. ...
Out & About Zakynthos
... drinks brought right to your sun lounge (which we did of course)! After a very relaxing day on the beach we headed off and stopped for some spit roast pork and traditional Greek food.... Yum!
Yesterday we (Eric, myself, Jane, Rob & Georgia) walked down to Keri Lake and hired a boat to explore our local surroundings. This was a fantastic way to look at all the places around where we are staying. The water here is ...
Family & Friends Catch Up
Hello from beautiful Zakynthos Greece!
After a bit of a hairy plane ride (and delayed) from Munich, we finally arrived on the Island, and patiently waiting for us at the airport was Eric's lovely family (and Jane, Rob & Georgia). It was sooo good to see some familiar faces after being away for a couple of weeks.
The view from our villa is absolutely stunning, and the website pictures just ...
The Hotel and Katelios Area
... 8599996566772px;"> Quick tour of the Room - Bathroom more basic than expected but clean - View outside is a nice rural mountainous view - I like it.
10am Jacqui and I go up to the Pool Bar for the Rep's welcome presentation, learn a few ...
Why do we Travel?
... because I believe the most important thing to do while travelling, is to keep an open mind. But after spending five weeks in Greece, being unable to drink tap water and without a properly functioning toilet, I think ugly can be used. Now there is the obvious extrinsic experiences that you can expect from travelling. The unforgettable sights that are more beautiful than any picture can capture, the wealth of knowledge that is bestowed upon you each and every day and ...


text:
Remodeling Companies » Mississippi » Picayune
Remodeling companies in Picayune
Are you one of the 11,062 residents in Picayune looking to remodel your home? 4,568 homeowners spread out across the 11.80 square miles of Picayune can now use Remodeling Companies to locate their local home remodelers. Remodeling Companies find for the 895.60 inhabitants per SM of Picayune contractors, designers, roofers and many more service professionals to make their remodeling dream a reality. With 388.30 homeowners per SQM in Picayune already happy with their Italian kitchens, master bathrooms, or sunroom additions - use Remodeling Companies to make your dream a reality.
- Flooring
- Stairs
- Plumbing
- Room additions
- Decks
- Sunrooms
- Hot tubs
- Landscaping
- Certificate of Occupancy (CO)
- Design / layout / blueprint
- Building permits
- Architecture
- Interior & exterior painting
- Professional consultations
- Green remodeling & energy efficiency
- Remodeling materials
Services area covers the following zip codes in Picayune:
Recent Job Requests
- Alside windows remodeling
- Fusion showerhead leaking
- Hayward pool install new surface
- Tischler door installation
- Speakman showerhead low spray action
- Mohawk hardwood floor repair
- Beveled Glass Works window retrofit
- Trilogy pool install new surface
Additional Local Remodelers:
- Top Remodeling
Kitchen remodeling
Bathroom remodeling
Room additions
- Larry Gerard Inc.
Licensed general contractor
Licensed remodeling contractor
Licensed in alabama and mississippi
- Kitchen Artisans, Inc.
Cabinet makers
Kitchen remodeling
Kitchen cabinets
Need other contractors services in Picayune?
Plumbers in Picayune | Electricians in Picayune.


text:
and Publications
and Events
Conferences & Events
Annual Conference
EDUCAUSE Connect Events
EDUCAUSE Institute Programs
ELI Annual Meeting
ECAR Annual Meeting
NERCOMP Annual Conference
Security Professionals Conference
Administrative IT Summit
Online Events
Webinars/Online Events Calendar
Event Resources
Fellowship/Scholarship Program
Presenter Concierge
EDUCAUSE On Campus
Other Higher Ed Event Calendar
Events for all Levels and Interests
Whether you're looking for a conference to attend face-to-face to connect with peers, or for an online event for team professional development, see what's upcoming.Stay
Career Center
EDUCAUSE Institute
Leadership and Management Programs
Project Management
Fellowships and Awards
Getting Involved
Jump Start Your Career Growth
Explore EDUCAUSE professional development opportunities that match your career aspirations and desired level of time investment through our interactive online guide.Stay
Focus Areas
and Initiatives
Latest Topics
EDUCAUSE organizes its efforts around three IT Focus Areas
Join These Programs If Your Focus IsStay
and Contribute
Find Others
Get on the Higher Ed IT Map
Employees of EDUCAUSE member institutions and organizations are invited to create individual profiles.
Uncommon Thinking for the Common Good™
EDUCAUSE is the foremost community of higher education IT leaders and professionals.
Your Selections Under:
Filter by type
- Podcasts [x]
Filter by Publications
Filter by Library Taxonomy
- Infrastructure and Emerging Technologies [x]
- Teaching and Learning [x]
- Information Technology Management and Leadership (24)
- Libraries and Technology (11)
- Policy and Law (5)
Teaching and Learning
The strategic use of information technology has the ability to transform teaching and learning helping institutions realize EDUCAUSE's mission of "transforming education through information technologies." All institutions have made educating learners a critical priority. Technology is a means, not an end, toward that goal.
EDUCAUSE focuses on understanding learners, aligning learning principles and practices together and integrating learning technology—all with the goal of improving student success. EDUCAUSE members also benefit from tools and techniques that enable them to deliver high quality academic programs and support services in a flexible manner. The strategic use of information technology can enhance student engagement, improve access, and make services more convenient. As IT is integrated into the academic enterprise, a number of other issues are raised such as financing, policies, faculty involvement, and assessment.
We encourage you to explore EDUCAUSE's resources on teaching and learning. These include the work of our members as well as material contributed from EDUCAUSE's strategic initiative, the EDUCAUSE Learning Initiative. We hope you will find the material of use and encourage you to contribute to future EDUCAUSE activities in teaching and learning.
Library Items on this Topic
EDUCAUSE Library Items for Teaching and Learning
- Podcast: An Interview with Lonnie D. Harvel, VP for Educational Technology at Georgia Gwinnet College
July 10, 2007
Lonnie D. Harvel , Vice President for Educational Technology, Georgia Gwinnett College presented a session at the EDUCAUSE 2007 Southeast Regional Conference entitled, " From Distraction…
- Gary R. Bertoline on Cyberinfrastructure-Enabled Learning Environments
June 21, 2007
In this podcast of " Cyberinfrastructure-Enabled Learning Environments for Gen Z ," Gary R. Bertoline , distinguished professor of computer graphics and assistant dean at Purdue Univers…
- An Interview with Marc Smith at CNI's 2007 Spring Task Force Meeting, Part I
May 3, 2007
This is part one of a two-part podcast featuring an interview with Marc Smith at the CNI Spring 2007 Task Force Meeting. This first part of the interview lasts approximately 22 minutes and …
- EDUCAUSE2006 Podcast: Development of Temple's TECH Center
March 24, 2007
In this 46-minute recording from the 2006 EDUCAUSE Annual Conference, we'll hear from Gerald Hinkle, Timothy O'Rourke, and Sheri Stahler in a session entitled From Labs to Collabora…
- ELI2007 Podcast: First Generation Ubiquitous Computing
February 4, 2007
In this 50-minute recording from the EDUCAUSE Learning Initiative Annual Meeting, we'll hear from Bryan Alexander in a session entitled First Generation Ubiquitous Computing: Social, Mobil…
- An Interview with Peter Kaufman and Mark Phillipson
December 18, 2006
In this 23 minute recording, we'll hear Peter Kaufman and Mark Phillipson, both from the Columbia University's Center for New Media Teaching and Learning . Listen in as they cove…
- An Interview with Janet McCue
December 16, 2006
In this 22 minute recording, we'll hear from Cornell University's Janet McCue . Listen in as she touches on topics like research computing, social software and much, much more. …
- An Interview with Stephen Rose
October 17, 2006
In this 13 minute recording, we'll hear from Stephen Rose , the CIO of the American Council on Education . Listen in as he shares some background on ACE, background on technology issues…
- An Interview with Dennis Trinkle
October 17, 2006
In this 23 minute recording, we'll hear from Valparaiso's CIO, Dennis Trinkle . Listen in as he shares a few thoughts on his 361º Model for Transforming Teaching and Learning with …
- An interview with the University of Tennessee's Barbara Dewey and Julie Little
April 19, 2006
In this 19 minute recording, I sit down with University of Tennessee's Barbara Dewey and Julie Little . We'll learn about their information commons and touch briefly on the co…


text:
Ed Killer: Boat races won't harm a manatee hair nor a blade of sea grass
Next weekend should be a lot of fun.
Subscribe to TCPalm.com and our Treasure Coast Newspapers
Ready to subscribe to TCPalm.com, The Stuart News, The St. Lucie News Tribune and The Indian River Press Journal? Choose between a Premium or Digital subscription below.
Need Help? Call us at 1-877-710-6180.
Monday-Friday: 6am-3pm / Saturday: 6:30am-10:30am / Sunday: 7am-11am


text:
|August 2014 Institute
|Toward a Comprehensive Model for Community Colleges to Address Poverty
|Presented by:
|President Randy VanWagoner
|Friday, August 21 1:00pm
|Max number of participants:
Community colleges throughout America serve more low-income students than any other sector of postsecondary education. Over the years, small-scale programs and services have only addressed isolated aspects of students in poverty. As the income gap in America widens and the middle class shrinks, a more comprehensive model to address poverty is needed more than ever. A summary of the literature will be presented along with a preliminary conceptual framework to spark discussion about meeting the needs of low-income students at MVCC. Your insights and feedback will help shape this initial work into a meaningful comprehensive model to scale up efforts for an even greater impact with our students who need it most.


text:
DEFINITION of 'Country Risk'
A collection of risks associated with investing in a foreign country. These risks include political risk, exchange rate risk, economic risk, sovereign risk and transfer risk, which is the risk of capital being locked up or frozen by government action. Country risk varies from one country to the next. Some countries have high enough risk to discourage much foreign investment.
BREAKING DOWN 'Country Risk'
Country risk can reduce the expected return on an investment and must be taken into consideration whenever investing abroad. Some country risk does not have an effective hedge. Other risk, such as exchange rate risk, can be protected against with a marginal loss of profit potential.
The United States is generally considered the benchmark for low country risk and most nations can have their risk measured as compared to the U.S. Country risk is higher with longer term investments and direct investments, which are investments not made through a regulated market or exchange.
Unsystematic RiskCompany or industry specific risk that is inherent in each investment. ...
Systematic RiskThe risk inherent to the entire market or entire market segment. ...
Sovereign Credit RatingThe credit rating of a country or sovereign entity. Sovereign ...
Overseas Private Investment Corporation ...A U.S. government agency that assists businesses looking to invest ...
Counterparty RiskThe risk to each party of a contract that the counterparty will ...
Liquidity RiskThe risk stemming from the lack of marketability of an investment ...
Mutual Funds & ETFs
Top 3 Africa ETFsExplore detailed analysis of the top three exchange-traded funds that track the African companies, and learn the type of investors these ETFs and suitable for.
Mutual Funds & ETFs
ETF Analysis: SPDR S&P 500 TrustFind out more about the SPDR S&P 500 ETF Trust, the characteristics of the exchange traded fund and the suitability of investing in the fund.
Investing Beyond Your BordersInvesting abroad poses risks, but can also help you diversify. Discover ways to invest in foreign stocks.
Options & Futures
Evaluating Country Risk For International InvestingInvesting overseas begins with determining the risk of the country's investment climate.
Mutual Funds & ETFs
Finding Fortune In Foreign-Stock ETFsThink beyond your borders to reduce the impact of local market downturns.
Investing Basics
Why Country Funds Are So RiskyHigh returns come at a price, but country funds may still be a good bet.
What Is An Emerging Market Economy?Emerging markets provide new investment opportunities, but there are risks - both to residents and foreign investors.
What a Fed Delay Means for the ECB & BoJThe Fed's continued delay has repercussions for more than just the U.S. economy and markets. The ECB and the BoJ may support the case for stocks in Europe.
How Worried Should We Be About China?An economic slowdown, a freezing up in trade and plunging markets and currencies are casting a shadow across Asia—and the globe. How worried should we be?
Technical Indicators
Explaining AutocorrelationAutocorrelation is the measure of an internal correlation with a given time series.
What is the difference between market risk and country risk?Market risk and country risk are two different types of risk to be cautious of when you are investing. Market risk deals ... Read Full Answer >>
How do business ethics differ among various countries?Business ethics is the study of business policies and practices, such as corporate governance, insider trading, bribery, ... Read Full Answer >>
What is the utility function and how is it calculated?In economics, utility function is an important concept that measures preferences over a set of goods and services. Utility ... Read Full Answer >>
What is the difference between a greenfield investment and a regular investment?A greenfield investment is a particular type of investment where an international company begins a new operation in a foreign ... Read Full Answer >>
What are the benefits for a company investing in a greenfield investment?Advantages of greenfield investments include increased control, the ability to form marketing partnerships and the avoidance ... Read Full Answer >>
Why did China designated certain territories as special administrative regions?The primary reason for the People's Republic of China designating two territories as special administrative regions, or SARs, ... Read Full Answer >>


text:
YELLOW LAB CAR MAGNET SET OF 2 (Item #40812K)
"Life's Better" magnets Express your love for the pup in your life with these beautifully illustrated magnets. Adorable magnets have cute sayings, "Life is better with a Pug", along with a depiction of your breed of choice. Perfect for the car, refrigerator, RV, filling cabinet, and more. Vinyl. 6"W x 41/4"L. Set of two.
Ready to Purchase?
Out of stock
Next ship date: Oct 15, 2015
Notify Me When Available!
Enter your email address below to let a friend know about this great product!
Recommended Products
purse pouch car accessory
Your Price: $9.98
car valet
Your Price: $19.98
solar auto fan ii
Your Price: $9.98
set of two car pockets
Your Price: $9.98


text:
Change Location
ACE Fit Share
Add some diversity to your fitness program with these butt and hip exercises from the American Council on Exercise. We'll help you tone up those glutes and get that butt into shape. Choose from a wide variety of hip flexibility and strengthening exercises including glute bridges, BOSU lateral jumps and more. These exercises come with detailed instructions, step-by-step guidance and tutorials on proper equipment use. For full workout routines featuring butt and hip exercises, be sure to visit our Workouts section.
Fit Life Articles
Hitting the road this summer? Whether you're on a weekend getaway or an extended business trip, it can be tough to stick with your health and fitness goals while traveling. Technology expert Ted Vickey rounds up the latest apps to help you stay fit and focused when travel...
A healthy back is essential for good posture and being able to do all the things required by daily life. That's why it's worth taking the time to ensure your back muscles are strong and supportive. This 10-minute back workout focuses on both the upper- and lower-back...
Yoga practitioners tout the benefits of this physical activity, which extend far beyond what many traditional workout regimes can offer. Discover why rolling out the mat can improve your quality of life.


text:
Patrick Bamford could be recalled from Crystal Palace by Chelsea
Middlesbrough FC's top scorer last season is struggling to win first team football under Alan Pardew
BRYN MORRIS ON THE BENCH: Boro midfield man Bryn Morris has been named among the substitutes for this evening's clash with hosts Germ,any in the Mercedes-Benz Elite Cup in Heidenheim.More »
JOHN HENDRIE WONDERGOAL! Wow! Mesmerising. I could watch this for hours. To be fair, I often do.More »
NEW BERNIE BOOK: Looking forward to getting a copy of this. Bernie's never been known to pull his punches.More »
BAMFORD FRUSTRATION: Just in case you missed this earlier, our former Middlesbrough FC striking hero Patrick Bamford can't get a kick for Crystal Palace and Chelsea aren't happy about it.More »
FEWSTER THE HAT-TRICK HERO: Read Paul Jenkins' thoughts on today's Middlesbrough FC Under-21 victory at York.More »
INJURY BLOW: Boro's rivals Ipswich Town suffer a setback.More »
CLOUGH ON BORO: Want to know what former Derby boss Nigel Clough thinks of Middlesbrough FC's promotion chances? Read on to find out. The 49-year-old son of Boro legend Brian is currently out of work after being sacked by Sheffield United in May but keeps a close eye on English domestic football.More »
MORRIS IN ENGLAND ACTION: Boro starlet Bryn Morris is just minutes away from representing England Under-20s in today's match against Germany. If you missed it here's the story we published on Gazettelive.More »
BORO TESTER: Why not have a go at this...??More »
BORO CUP GLORY: The first, but hopefully not the last, man in a Middlesbrough shirt lifting a trophy this season. Well done Glen Durrant on his latest triumph. What a year it's been for the Boro fanatic. He'll be a guest of MFC on Saturday for the Fulham game.More »


text:
We Are Thinkers That Can Do!
WD Partners is a global design and program management partner for multi-unit food and retail brands. With talented associates worldwide, and LEED accredited designers, architects and engineers licensed in all 50 states and Canada, we create opportunities to improve revenue and profits for our clients.
WD provides an environment where associates gain experience, train and mentor with the best, and build a successful career! A philosophy of Real People where we leave our egos behind and focus on honesty and teamwork at all levels allows us to deliver on our commitment to our clients' success. Here at WD, we want to be the best and win at all times. We currently have an opening for a Sr. Information Technology Support Technician.
As Sr. Information Technology Support Technician you will be providing advanced level support to internal end-users on a variety of issues. You will be supporting internal associates in a regional multi-site environment. You are responsible for identifying, researching and resolving technical problems through responding to telephone calls, email and personnel requests for technical support. This role is also responsible for installing, supporting and configuring hardware and software as needed to support the business operations units of the company.
Minimum experience:
What matters to our associates matters to us and benefits are at the top of the list. We provide a comprehensive benefits package that encourages our associates to live healthy lifestyles, reach financial goals and cope with the challenges of life at work and at home. WD supports and encourages work/life balance so we offer flex-time, we get involved in local charitable activities, and provide ways to get to know colleagues at BBQs and impromptu studio gatherings.
Check us out and you will find an opportunity to collaborate with smart, down to earth people who innovate with national and global brands and grow every day!


text:
A group of about 10 Port Washington residents and Mayor Tom Mlada joined two representatives of the Coast Guard Friday morning to inspect the Port lighthouse, an event that formally starts the 90-day clock for the city...Read more...
The $300,000 repair of the historic Ozaukee County courthouse clock tower in downtown Port Washington is set to begin next week — not a moment too soon.
Expected to take six to eight weeks to complete, the p...Read more...
With two projects in hand, Port Washington officials are continuing their first foray into an area that has become common for many communities: development incentives.
Last year, developer Gertjan van den Broek received a $250,000 loan fr...Read more...
Read more
Town of Grafton officials on Monday reached a tentative agreement with We Energies to move 53,000 cubic yards of fly ash from an old dump site on Stonecroft Drive — near the City of Port Washington's southern border and close to the proposed Cedar Vineyard subdivision — to the utility's existing landfill on Highway 32. The agreement, which as of Wednesday morning still required approval from the utility's headquarters, outlined everything from the hours work would be allowed on the old fly ash site to the route trucks will take on their way to the landfill on Highway 32 near the I-43 interchange. It also spells out the amount of money We Energies will pay to rebuild Stonecroft Drive and requires the fly ash site to be rezoned for conservancy after it is remediated.
Order a Subscription
Newsstand LocationsContact Us


text:
FAIRY FASTENER (Item #40949)
Bracelet fastener Wear your favorite bracelets again without having to ask for help. Ergonomically designed to comfortably rest in either hand, so you can easily fasten your own bracelet. Simply attach the claw end of your bracelet to the Fairy Fastener and bring the loop-end around your wrist with your other hand. Polycarbonate. 71/4"L.
Recommended Products
age spot cream
$12.98 - $14.98
youth restore face cream
Your Price: $14.98
98 percent aloe vera gel
Your Price: $12.98
wipe dispenser
Your Price: $14.98


text:
by Roger Oakland Evolution, according to its biological definition, is a mechanism that changes life through time. Although for years, many have used the idea of evolution to explain away God, there are many today who are saying, because of evolution, everything is God. This trend is obvious in Great Britain, the very country where… Continue Reading
Ecumenical Jihad – John MacArthur
According to some prominent evangelical leaders, we've been fighting the wrong war. Protestants, Catholics, and other religious people should quit bickering over issues of heaven and hell and unite in the culture war. Wait a minute…what's wrong with this picture? Sermon excerpt: A woman once wrote to me, she said she thought Christianity was fine… Continue Reading
To Judge or Not Be Judged
By Ray Yungen With regard to the current spiritual deception coming into the church, let us ask two questions: Is it right to judge? And do all paths lead to God? Jesus Christ foretold in Matthew 7:22-23 Many will say to me in that day, "Lord, Lord, have we not prophesied in thy name? and… Continue Reading
Goodbye Emergent Church
Goodbye Emergent: Why I'm Taking The Theology of the Emerging Church To Task writes Jeremy Bouma … I'm not exactly sure when my saucy love affair with emergent and liberal Christianity ended. My "I don't" isn't as crystalized as my "I do." Maybe it was when I read Pelagius' writings and realized much of Emergent… Continue Reading
The Shack author Awarded Honorary Degree
PORTLAND, Ore. – Warner Pacific recognized alumnus and best-selling author William Paul Young '78 with an Honorary Doctor of Laws degree during Winter Commencement ceremonies, Dec. 19, at New Hope Community Church, in Portland. Young is the author of the international best-selling book "The Shack," which has over ten million copies in print and has… Continue Reading
Todd Bentley, Bob Jones, Patricia King – Astral Projection
Patricia King discussing with fellow "prophet" "seer" mentor Bob Jones and "revivalist" Todd Bentley, the practice of visiting the "third heaven" Todd Bentley had previously called Bob Jones and described his visit to the "third heaven" during which time he was, of course, visited by angels. Todd Bentley explains how he first met with Bob Jones,… Continue Reading
- 1
- 2
- 3
- …
- 5
- Next Page»


text:
Frank Gonzales
Paintings by Frank Gonzales.
- http://jamesmakeart.blogspot.com/
- http://www.flickr.com/airtightelevator
- http://mariafulmer.com
- http://www.bealsandabbate.com
Paintings by Frank Gonzales.
Really really love the first one
I remember this guy! Great stuff.
absolutely beautiful.
Gorgeous and powerful!
Very nice, reminds me of a looser version of Mark Fairnington's work
Since this great post, Frank Gonzales has done several more works for his SOLO show in Santa Fe at Beals & Abbate Fine Art. Here is a direct link to his show page…


text:
Discussion BoardsOpen MenuDiscussion Boards Open Menu
- Windows® 7 Beta and Test (Read Only)
- Windows® 8 Release Preview (Read Only)
- Windows® 10 Technical Preview (Read Only)
- Commercial Desktop and Workstation (Read Only)
- Commercial Printers and All-In-Ones (Read Only)
- Commercial PC Software (Read Only)
- Printers and All-In-Ones (Read Only)
BlogsOpen MenuBlogs Open Menu#HPExpertDay: Windows 10 Edition will be here inOpen Menu
- HP Support Forum Home
- >
- Printers & All-In-Ones
- >
- Other Printing
- >
- Cannot change the printing preferences
HP Support Forums
Join in the conversation.
- Subscribe
- Mark Topic as New
- Mark Topic as Read
- Float this Topic to the Top
- Bookmark
- Subscribe
- Printer Friendly Page
Cannot change the printing preference
First I had a paper jam, took off th duplexer and removed it, put duplexer back on. When I print, it works, but it won't let me change the printing preferences. It's like it's not an option, never comes up. Would someone please help? Thank you. I have a deskjet Model C8970A and never had this problem before. Great printer otherwise.
Re: Cannot change the printing preference
Either you can try to download HPPDU ( HP Printer Diagnostic utility) from the hp website by clicking ont he support and drivers and putting the product number and selecting the os of the computer. And then try to run that application. And then let me know.
I think that will resolved most of the printer issues.
Re: Cannot change the printing preference
I already did that and got all green cks on it. I also keep getting a pop up saying "found new hardware"....but that's been doing that since someone at HP helped me with another problem several months ago. I just ignore it. Hate to tell you, but you are dealing with a 75 yo woman....I try.
- HP Connected - Finding Your Printer's Email Address in HP Connected
- HP Printers - How Do I Find My Model Number or Product Number?
- HP Connected - Getting the Printer Claim Code
- HP Printers - Which Cartridges Work with My HP Printer?
- HP Officejet and Photosmart All-in-One Printers - The Automatic Document Feeder (ADF) Does Not Pick Up Paper


text:
10 years of friendship, arguing, and fanatical Pistons fandom! Read about it here
PF.com is also on Facebook. Follow/Like us Here.Dismiss Notice
Dismiss Notice
Preseason live streaming: No preseason games will be televised but Pistons.com will provide live streams of the four home games. All eight games will be broadcast by radio flagship Detroit Sports 105.1. Preseason opener is Tuesday here against the Indiana Pacers.
Linwood's Official season predictions thread
Discussion in 'Pistons and NBA' started by linwood, Jul 23, 2006.
Page 2 of 2
Page 2 of 2


text:
The BMW 3 Series is getting a refresh for the 2016 model year, although you might not be able to tell by looking at it. Underneath the slight styling tweaks is a revised suspension and automatic gearbox. Plus, there are two new models: the 340i and 330e plug-in hybrid.
2016 Bmw 3 Series
1 / 1
60Refreshed 2016 BMW 3 Series adds two new models to the range
1 / 1


text:
Your Cat, Your Life
The Scoop
Cat News, Politics
Meow-Out-Loud Humor
Cat Chic
Gear and Glam
Cat Breeds
Foods & Treats
Health & Care
Behavior & Training
Cat of the Day
Photo Comments
Photo Comments (1)
"Thank you my Angel pal Big Harry and Mom Dana for my beautiful Bridge Anniversary Rememberance"
Photo Comments (2)
Thank you my friends for thinking of me today. Your kind words bring my family comfort and smiles.
I am welcoming too many members of my family lately. I am catching up with Fluffy and making him feel welcomed.
Going to get back to lounging by the lake and taking some naps. Later I will visit my family and sprinkle some angel dust. Dad will sneeze..and Mom will know I was there..MOL
Wriggley and I welcomed Fluffy to the Bridge last week.
We are so glad to see him. But so very sad for Mommy and Daddy.
They really miss their Doggie.
Mom did something really cool because she wants to have us all together again. We are currently sitting in different areas of the house. She really doesn't like that at all.
They are getting a new bedroom soon and have a lot more room than in their old bedroom where I use to hang out. Mom bought a new cabinet with glass doors where we are going to be all together. It's like a small media cabinet. But it is just the right size to keep our beautiful urns that they have picked out especially for us.
Mom is going to have photos of us on the top and our urns will all be
inside. This way Mom and Dad can talk to us at once when they are relaxing in their new space.
Dad thought it was a great idea and said he loved the cabinet she picked out.
Now with all that snow holding up construction, let's hope it is done soon!!
Mom says she can't believe I made my journey 1 yr.ago.
Although she still gets a little sad, she tries to think of the happy times in my life. I was sick for only a short time. So there were so many wonderful memories.
My parents were going to spay and release me. I was not happy about being trapped. When they brought me home from the vets after being spayed,I dissapeared for an entire month. Mom was so upset..she thought something happened to me.
I finally appeared again. She told Dad that she was going to get me into the basement somehow and I was never going out again. She used Nonny to lure me in. Nonny was all about the food. When she put the food near the door, she scared Nonny into the basement. I ran right in after her.
Mission accomplished.
I began my life as a stray. But spent most of it as a loved house kitty..
Thank you my friends for thinking of me today.
Copyright © I-5 Publishing, LLC. All rights reserved.
Visit Dogster


text:
hey guys, just wondering about the laying tricep extension. I have been steadily going up in weight in it, aiming for between 6-8 reps. But when I am finished a set and get up I feel momentary (5-10 seconds) pain (something like intense lactic acid buildup) all in my upper chest. is this normal? I also feel that I am arching my back too much and possibly using it to support the heavy weight.
This leads me into my second question. I think I have heard somewhere (Arnold I think) that for tricep excercises, you should do more reps, 12-14 perhaps. is this true? maybe my problem? thanx.


text:
There was a rumor going around the girls at school that I had a big dick. I'm not sure which girl started talking, but I'm glad she did. Jaslene caught wind of it, so she gave me her number at a party. We met up at her house a few days later and I wasn't sure why until she got me alone. She was hungry for some real man meat. She dropped her jaw in amazement when she took my cock out. She left her mouth open and filled it with my cock. When it came time to spread her legs she got scared it wouldn't fit. I eased it in and broke her in nice and slowly. It wasn't long after until she was bouncing on it like she was riding a stallion. She loved it some much. She wanted me to blow my load deep inside her young and tender box.
"Hot And Steamy"
Jessica Lynn
"Happy Dillion"
Dillion Harper
"Pretty Pussy"
April Oneil
"Tweety And The Pussy"
Tweety Valentine
"Pussy Pumper"
Giselle Mari
"Double Dip"
Erica Fontes
"Give Me Some Love"
Amia Miley
"Young Love"
Britney Young
"Simply Delicious"
Tanner Mays
"Pretty And Perky"
Zeina Heart


text:
All Android applications categories
All Android games categories
by: Story | 0
Puzzle Game SUDOKU!
Total three-stage configuration, you can enjoy SUDOKU game.
* Rule
Enter numbers into the blank spaces so that each row, column and 3x3 box contains the numbers 1 to 9.
How long will it take to solve a SUDOKU?
Try checking a SUDOKU now.


text:
Sir Mick Turns 70! [VIDEOS]
Wow! Mick Jagger, that is Sir Mick, turns 70 today and he's still rockin'!
Wow! Mick Jagger, that is Sir Mick, turns 70 today and he's still rockin'!
In addition to barbecues, vacations and oppressive humidity, July always brings with it a spell of best-of-the-year-so-far lists. The newest one of interest to classic rock fans reveals that Bon Jovi, Bruce Springsteen and the Rolling Stones have taken win, place and show in the list of the Top Grossing Concert Acts for the first half of 2013.
Anthony Kiedis of the Red Hot Chili Peppers was trying to enter the Four Seasons Hotel in Philadelphia the other day when a brawl broke out with hotel security that ended up with a couple of people on the ground, and Kiedis in a headlock...
Red Hot Chili Peppers singer Anthony Kiedis got into a fight today (June 21) with security agents apparently attempting to protect the Rolling Stones at the Four Seasons in Philadelphia -- although both the hotel and the band say it wasn't anybody who works directly for them.
While they may not be celebrating their 50th anniversary quite as enthusiastically as some fans might have wanted, the Rolling Stones appear to have gotten back into gear with their latest tour -- and guitarist Ron Wood thinks these dates will serve as a springboard into more new music from the group.
A new photo exhibition featuring previously unseen early images of several Rolling Stones members is scheduled to open next month at London's Proud Chelsea gallery.
Carrie Underwood had a fun weekend! The Rolling Stones performed in Toronto Saturday night and she was there...on stage with Mick!
After 50 years together, The Rolling Stones are continuing to thrill audiences on their current 50 and Counting Tour.
Fans who attended the Anaheim, Calif. date of the Rolling Stones' '50 & Counting' Tour' got a little bit more than they bargained for Saturday night (May 18). Former Nirvana drummer and Foo Fighters front man Dave Grohl came out mid-set at the Honda Center to join the legendary rockers for a searing rendition of 'Bitch.'
As if you needed another reason to head to Cleveland over Memorial Day weekend, the Rock and Roll Hall of Fame has just announced what sounds like a stellar new Rolling Stones exhibit opening May 24 -- 'Rolling Stones: 50 Years of Satisfaction,' offering what a press release promises will be "the Museum's first major exhibition capturing the band's legendary career spanning more than 50 years."
Keith Richards' memoir of his life and the life of the Rolling Stones revealed some things about the band and Mick Jagger that the frontman didn't care for. In a recent interview Jagger calls an apology from Richards a "prerequisite," while Richards shares he doesn't regret a thing.
It's enough to make an old rocker feel good. Demand to see The Rolling Stones is so great, the band has added another date to their 50 and Counting tour.


text:
This item is currently
Our Top Recommendations
HN-JUJ180 Ju Ju Be
Ju Ju Be Be All Diaper Bag - Marvelous MumsItem # HN-JUJ180
Roll over to zoom
Click for full screen
- Floral pattern Teflon-coated fabric with green satin lining
- Large interior space with magnetic closure
- Pockets galore for bottles, baby gear, and Mom essentials
- Messenger-style bag with comfortable, adjustable strap
- Dimensions: 14L x 5.5W x 11H inches
Full Description
More From This Brand
Guarantee & Returns
Similar Diaper Bags
Diaper Dude Diaper Bag-Black Skull & Crossbones
Diaper Dude Messenger II Black Pinstripe Diaper Bag
Skip Hop Limited Edition Duo Diaper Bag - Luxe French Stripe
Skip Hop Forma Pack & Go Backpack
Timi and Leslie Charlie Tote Diaper Bag - Pewter
Timi and Leslie Marie Antoinette Diaper Bag - Silver
Sponsored Links
Ju Ju Be
Ju Ju Be Be All Diaper Bag - Marvelous Mums
Earthy yet modern, flashy yet sophisticated, the Ju Ju Be Be All Diaper Bag - Marvelous Mums is a fusion of every style in one functional yet sassy package. The exterior fabric sports a bold blue and green floral pattern and a protective Teflon coating. Cleverly designed features, like the dedicated changing "station" and "brag" photo display areas, will make you just as eager to show off your diaper bag as you are to flaunt your baby.Construction Details:Green interior lining eliminates the "black hole" ef


text:
based in Christchurch, NEW ZEALAND
The carboNZeroCertTM programme and CEMARSTM (Certified Emissions Measurement And Reduction Scheme) are internationally recognised greenhouse gas (GHG) certification schemes - commonly referred to as carbon footprinting. Developed by government owned Crown Research Institute, Landcare Research, the GHG certification schemes are based on solid science and participation in ...
California Climate Action Registry
based in Los Angeles, CALIFORNIA (USA)
A non-profit public/private partnership that serves as a voluntary greenhouse gas (GHG) registry to protect, encourage, and promote early actions to reduce GHG emissions. The California Climate Action Registry (the Registry) was established by California statute as a non-profit voluntary registry for greenhouse gas (GHG) emissions. The purpose of the Registry is to help ...
Torrie Smith Associates Inc.
based in Ottawa, ONTARIO (CANADA)
Greenhouse Gas Strategy Software designed for the practical business oriented environmental manager.
Global Warming International Center
based in ILLINOIS (USA)
The Global Warming International Center (GWIC) is the international body disseminating information on global warming science and policy, serving both governamental, non-governamental organizations, and industries in more than 145 countries. It sponsors unbiased research supporting the understanding of global warming and its mitigation.
Elysium - Carbon Trade & Investment
based in Yakum, ISRAEL
Elysium develops, trades and invests in the global market for certified and voluntary greenhouse gas emission reduction credits. Elysium serves as a professional umbrella for CDM, JI and voluntary project development, trade and investment, leading its clients through the maize of validating and registering potential projects, as well as assisting with successful ...
Committee on Climate Change (CCC)
based in London, UNITED KINGDOM
Committee on Climate Change (CCC) is an independent body established under the Climate Change Act to advise the Government on emissions targets, and to report to Parliament on progress made in reducing greenhouse gas emissions.
Will Solutions Inc.
based in Beloeil, QUEBEC (CANADA)
Will Solutions Inc., formely Gedden is recognised globally for its innovative, flexible and efficient solutions that stimulate reductions in greenhouse gas (GHG) emissions. Will's community-based solutions provide businesses and governments with alternatives in sustainable management. These alternatives focus on minimizing and re-using waste, optimizing transportation and ...
Heath Consultants Incorporated
based in Houston, TEXAS (USA)
Since 1933, Heath has been the leading service provider, manufacturer and distributor for a wide range of gas detection, pipe and cable locating and odorant analysis equipment including the Detecto-Pak Infrared (DP-IR™), Remote Methane Leak Detector (RMLD™) and the GT Series gas detectors. Heath also has products specifically designed to meet requirements for the upstream ...
Greenhouse Gas Separation Systems Inc. (GGSSI)
based in CALGARY, ALBERTA (CANADA)
GGSSI is a Canadian environmental technology and technical services company established primarily to commercialize a new patent pending process for the elimination of greenhouse gas (GHG) emissions, such as carbon dioxide (C02), nitrogen gases (N02) and methane, that are typically found in most industrial plants around the world.
Biowise Limited
based in Willerby, UNITED KINGDOM
Wastewise is a leading waste management, recycling, composting and skip hire company based in Hull and East Yorkshire. We are committed to helping our public and private customers improve their environmental performance whilst lowering costs.