text:
|Publication number
|Publication type
|Application number
|Publication date
|Jan 9, 1996
|Filing date
|Aug 23, 1994
|Priority date
|Aug 23, 1994
|Fee status
|Also published as
|Publication number
|Robert H. Havemann
|Original Assignee
|Texas Instruments Incorporated
|Export Citation
|BiBTeX, EndNote, RefMan
|Patent Citations (14), Non-Patent Citations (2), Referenced by (117), Classifications (13), Legal Events (5)
|External Links: USPTO, USPTO Assignment, Espacenet
The following co-assigned U.S. patent applications are hereby incorporated herein by reference:
______________________________________TI Case Ser. No Filing Date Inventor Title______________________________________TI-19070 08/234,100 4/27/94 Havemann Self-Aligned Via Using Low Permittivity DielectricTI-19071 08/234,099 4/27/94 Havemann Via Formation In Polymeric Materials______________________________________
This invention relates to fabrication of semiconductor devices and more particularly to the formation of self-aligned contacts on such devices.
Semiconductors are widely used in integrated circuits for electronic devices such as computers and televisions. These integrated circuits may contain millions of transistors fabricated on a single crystal silicon chip to perform complex functions and store data. Integrated circuits are commonly constructed by sequentially forming transistor active regions, insulating films, and patterned conducting films in a predetermined arrangement on a semiconductor substrate. Active regions and conducting films must be accurately aligned if the circuit is to function properly; therefore, self-aligning features (features whose placement is at least partially determined by the location of previously fabricated features) are highly desirable.
To facilitate extremely dense circuit layouts, it is desirable at times to fabricate the lowest conductor level (which typically includes transistor gates) with conductors at minimum spacing. Unfortunately, such spacing may make a self-aligned contact (SACT) necessary for, e.g., electrically connecting to source/drain active regions located in the narrow gaps between the conductors. One method for forming a SACT directly between closely spaced features is described by Bollinger, et al., in U.S. Pat. No. 5,200,358, issued on Apr. 6, 1993. In this method, first and second dielectric layers are deposited over gate level conducting features. A selective etch process is used to facilitate the opening of contact holes between the conducting features. The selective etch process is designed to remove material from the second dielectric layer faster than it removes material from the first dielectric layer. Silicon nitride and silicon dioxide (of different varieties) are used for the dielectric layers; relative etch selectivity for the best of such dielectric combinations is on the order of 10:1.
A method such as that described in the '358 patent is generally useful when the aspect ratio (ratio of gap height to gap width) of the gap between the conducting features is low; as the aspect ratio increases (which it generally does when device geometries shrink), the first dielectric layer must be made increasingly thick to insure that the insulation protecting the underlying conducting features will not be perforated during contact window etching. At some geometry, this method becomes ineffective for reliably forming such self-aligned contacts; the limited selectivity between dielectric layers and limited etch anisotropy (ability to etch in one direction only, e.g. vertically) make such a process difficult for high aspect ratio gaps.
The present invention relates to a method of producing and a structure for self-aligned contacts on semiconductor devices. This is apparently the first self-aligned contact design capable of reliably forming contacts in narrow, high-aspect ratio gaps (e.g., less than 0.5 μm wide, 2:1 and greater aspect ratios). However, the invention may provide advantages for SACTs in general: a high quality conformal dielectric such as thermal oxide may be used as insulation between an SACT and adjacent conductors; this oxide may be made relatively thin for enhancing a capacitive storage node (e.g. DRAM applications); "notching" of such insulation may be prevented; a dielectric with excellent gap-fill, planarity, a relatively low dielectric constant, and etch selectivity to oxide greater than 100:1 is provided. These and other advantages will become apparent after reading this disclosure.
Organic-containing materials have many perceived disadvantages which have, in general, precluded their use as semiconductor dielectrics. These disadvantages include: instability and out-gassing at modest (generally less than 500� C.) temperatures; application by wet methods where vapor deposition is preferred; and an incapacity to withstand photoresist stripping operations. However, it has now been found that certain organic-containing materials are substantially unaffected by etching which is wholly effective on materials such as oxides and nitrides; conversely, the present invention includes etch procedures which may selectively remove such organic-containing materials without substantially affecting exposed inorganic dielectrics (e.g., oxide or nitride).
Consequently, the present invention includes a method of forming a self-aligned contact on a semiconductor device. In this method, two conductors of a predetermined height are provided on a substrate, preferably with each containing an insulating conductor cap at least in the vicinity where the SACT is to be formed. These conductors are preferably separated by a predetermined spacing. Over these conductors and the surrounding substrate, a conformal dielectric layer may be formed, thereby creating an insulated gap of predetermined width between the conductors. An organic-containing dielectric layer may then be deposited over the conductors, preferably to a depth sufficient to completely cover the conductors and fill the insulated gap. An inorganic cap layer may then be deposited over the organic-containing dielectric layer. A cap window may be etched through the cap layer, substantially vertically aligned with the insulated gap, preferably using the organic-containing dielectric layer as an etch stop. A contact window may subsequently be etched through the organic-containing dielectric layer, using the cap window as a mask, and using an etchant which does not substantially affect the conformal dielectric layer material.
Preferably, a short anisotropic etch of the conformal layer follows these steps if contact is to be made to the substrate in the gap (which may then be followed by a deposition of conducting material in the gap to form an electrical contact to the substrate). The insulating conductor cap may preferably be comprised principally of silicon dioxide, silicon nitride, or silicon oxynitride. The conformal dielectric layer may likewise be comprised of one or more layers of silicon dioxide, silicon nitride, or silicon oxynitride (and most preferably of thermally-grown oxide). As an aid to processing, it is preferable that the organic-containing dielectric layer etching step also strip any photoresist which may exist at that point above the cap layer.
The present invention also provides a structure for a self-aligned contact comprising two conductors formed on a substrate, substantially parallel over a predetermined length, and separated by a predetermined spacing. These conductors preferably include an insulative conductor cap, at least in the vicinity of the self-aligned contact. The structure further comprises a conformal dielectric layer adhering at least to the facing sides of the two conductors, thereby creating an insulated gap of predetermined width between the conductors (the conformal layer may be found on other portions of the conductors or substrate, since this may simplify processing). The structure may further comprise a conducting material disposed in the insulated gap, at least along one section of the predetermined length. The structure further comprises an organic-containing dielectric layer disposed in portions of the insulated gap other than the section filled with conducting material. An inorganic cap layer may be deposited overlying the organic-containing dielectric layer.
The conducting material may contact the substrate in the gap between the conductors. The two conductors may contain multiple conducting sublayers (preferably a polysilicon underlayer and a polycide overlayer). The organic-containing layer preferably contains 10% to 100% by weight organic material, preferably with the remainder comprised substantially of silicon dioxide.
This invention, including various features and advantages thereof, can be best understood by reference to the following drawings, wherein:
FIGS. 1A-1I show cross-sectioned elevations of one embodiment of a self-aligned contact made according to a method of the invention;
FIGS. 2A-2D show a cross-sectioned elevation of a second embodiment wherein a conformal layer is constructed in multiple steps;
FIG. 3 shows a cross-sectioned elevation of an embodiment wherein no contact is made to the substrate; and
FIG. 4 shows a top view of a typical embodiment (which may be applicable to any of the above embodiments) to illustrate lateral positioning of a contact.
One method of forming a SACT by the present invention is illustrated in FIG. 1. In FIG. 1A, a thin gate oxide 22 (e.g. of thermally-grown silicon dioxide) is shown over a substrate 20. A conducting layer 16, which may be polysilicon with a refractory metal silicide overlayer (not shown), is deposited over the gate oxide, followed by insulating layer 18, which may, for example, be additional thermally-grown oxide.
FIG. 1B shows the structure after patterning and etching by known methods to form two conductors 26, including insulating conductor caps 28, separated by a gap 24 with a relatively high aspect ratio (1.4:1 aspect ratio shown). FIG. 1C shows a conformal dielectric layer 30 (e.g. of thermally-grown oxide) over gate oxide 22, conductors 26 and conductor caps 28. Layer 30 adheres to the facing walls of conductors 26, forming insulated gap 29. With a dielectric layer 30 deposition thickness only 15% the width of gap 24 (FIG. 1B), the aspect ratio of insulated gap 29 is shown to be 2:1, illustrating the desirability of a method which requires only a thin dielectric layer 30.
FIG. 1D shows several additional layers, the first of which is an organic-containing dielectric layer 32, preferably deposited to fill insulated gap 29 as well as cover conductors 26 (including conformal layer 30). Layer 32 may be constituted, for example, of a spin-on glass (SOG) such as the Allied Signal 515 series low-k (dielectric constant of about 2) SOG, which contains 30%-40% organic polymer by weight. After application and drying of organic-containing layer 32, the entire intermediate structure is preferably annealed, e.g. at 425� C. for 60 minutes in a nitrogen atmosphere. An inorganic cap layer 34 may then be deposited over layer 32 by one of several known methods, including plasma-enhanced chemical vapor deposition (CVD) of silicon dioxide from tetraethoxysilane (TEOS). The cap layer should, in general, be designed such that it will not be totally removed by later etch steps. A layer of photoresist 36 may subsequently be applied over cap layer 34 in preparation for patterning.
FIG. 1E illustrates an etch window 38 formed in photoresist 36. This etch window is preferably wider than, and substantially vertically aligned with, insulated gap 29. FIG. 1F shows that etch window 38 supplies a pattern for etching cap layer 34 to create cap window 39. Preferably, organic-containing layer 32 acts as an etch stop to this process. It has been found, for example, that fluorocarbon etchants (e.g., C2 F6) in a high density plasma (HDP) reactor, such as the commercially available Applied Materials Omega-Centura 5300, etch TEOS oxide, e.g. layer 34, and yet do not substantially etch materials similar to organic-containing example Allied Signal 515 Series (e.g. layer 32).
Cap window 39 supplies a pattern for etching a contact window through organic-containing layer 32 by a suitable anisotropic (substantially in one direction, usually vertical) etch. As shown in FIG. 1G, a contact window 41 is preferably etched through organic-containing layer 32, preferably clearing the portion of layer 32 directly underlying cap window 39 and stopping on layer 30. This etch may, for example, be accomplished using an O2 plasma etch in the aforementioned HDP reactor. Advantageously, this etch may also be used to simultaneously strip photoresist 36 from the device. Note that after removal of the photoresist, cap layer 34 acts as a hard mask, preventing the O2 plasma etch from affecting the organic-containing layer in regions other than contact window 38.
As shown in FIG. 1H, a short anisotropic etch may be used to remove conformal layer 30 and gate oxide 22 from gap bottom 43. Such an etch may thin cap layer 34, as shown, particularly if similar materials are used for both layers 30 and 34. This etch also generally attacks layer 30 where it covers the top corners of conductors 26, since these corners are exposed by an oversized and/or misaligned contact window, as shown. This situation may necessitate insulating conductor caps 28 simply to provide etch margin above conductors 26; otherwise, conductors 26 might be exposed by the etch of conformal layer 30, resulting in the formation of a short in the final structure. Finally, as illustrated in FIG. 1I, contact plug 40, formed of a conducting material (e.g. a composite comprised of a refractory metal underlayer with a tungsten overlayer) may be deposited in cap window 39 and contact window 41 (which includes the portion of insulated gap 29 underlying window 39) to form a contact to the substrate at gap bottom 43.
A second SACT embodiment is illustrated in FIGS. 2A-2D. The intermediate structure as shown in FIG. 2A may, for example, be constructed in a manner similar to FIG. 1C. However, this intermediate structure is then anistropically etched by known methods to remove conformal dielectric 30 (and possibly gate oxide 22) from horizontal exposed surfaces. This step may thin conductor caps 28 (as shown). Conformal dielectric 30 deposited on the sidewalls of conductors 26 may also be thinned at this point (e.g., if layer 30 is used in a known manner to align ion implantation to substrate 20, layer 30 may require thinning after implantation to reduce the aspect ratio of insulated gap 29).
Additional material may subsequently be deposited as a conformal dielectric overlayer 42, e.g., using thermal oxide or silicon nitride (see FIG. 2C). This layer provides a minimal protection for substrate 20 during the O2 plasma etch to remove organic-containing material from insulated gap 29. FIG. 2D shows this embodiment after additional deposition and patterning similar to that of the first embodiment. However, notching of conductor caps 28 prevalent in the prior art is virtually eliminated, because only the extremely thin overlayer 42 must be removed to open the contact window to substrate 20. If conformal layer 30 and overlayer 42 differ in materials (e.g. thermal oxide and nitride), relative selectivity between the two materials may also be exploited to design a structure wherein conductor caps 28 are extremely thin.
Conductor caps 28 may be totally eliminated from an embodiment, for example, if connection to the substrate is not required (e.g. some capacitor applications). In FIG. 3, an embodiment is shown with a large cap window 39, no insulating caps over conductors 26, and a thin conformal layer 30 (which may be as thin as can be produced with reliable coverage of the underlying structure). The extremely high selectivity of the aforementioned O2 plasma etch allows for complete removal of organic-containing layer 32 in contact window 41 (including the underlying portion of insulated gap 29), without disturbing layer 30. Contact plug 40 is then deposited in window 41. By decreasing the insulation thickness between 40 and 26 (particularly directly above conductors 26, where prior art thickness must be large to compensate for notching), this embodiment may advantageously provide a large capacitance between contact 40 and conductors 26.
FIG. 4 shows a top view of an embodiment of the invention to illustrate another possible advantage of the present invention. Although contact plug 40 preferably occupies a lateral portion of gap 29 between conductors 26 (which include, e.g., layer 30, not shown), these conductors may typically extend well past the contact plug in a longitudinal direction. In such an instance, the low dielectric constant properties of many organic-containing dielectrics (as compared to oxide or nitride) may advantageously lower crosstalk, switching delays, and power consumption due to undesired capacitance between neighboring conductors 26, in areas other than the location of the contact. These considerations become particularly important for high-aspect, closely spaced conductors, an application to which the present invention is ideally suited.
The following table provides an overview of some embodiments cross-referenced to the drawings.
______________________________________Drawing Preferred or Other AlternateElement Specific Examples Generic Term Examples______________________________________20 Single-crystal Substrate silicon22 Thermally-grown Gate oxide Silicon nitride oxide (SiO2)26 Polysilicon w/ Conductors Aluminum, refractory metal copper, tungsten, silicide platinum, titanium overlayer28 Thermally-grown Insulating CVD oxide, oxide conductor cap silicon nitride, doped oxides, silicon oxynitride30 Thermally-grown Conformal CVD oxide, oxide dielectric layer silicon nitride, silicon oxynitride32 Allied Signal 515 Organic- Amorphous Series SOG containing Teflon, parylene, dielectric layer polyimide34 CVD silicon Inorganic cap Inorganic SOG, dioxide layer silicon nitride, doped oxides, silicon oxynitride36 Photoresist40 Tungsten w/ Contact plug Aluminum, refractory metal polysilicon, underlayer copper, titanium, tantalum, titanium nitride, refractory metal silicides42 Silicon nitride Conformal Thermal oxide, dielectric CVD oxide overlayer______________________________________
The invention is not to be construed as limited to the particular examples described herein, as these are to be regarded as illustrative, rather than restrictive. The invention is intended to cover all processes which do not depart from the spirit and scope of the invention. For example, dopants may be introduced to the substrate at various points during the practice of the invention. A gate oxide is not critical to the invention, as the invention may be practiced, e.g., using conductors constructed over field oxide. Either the organic-containing or cap layer may be planarized, e.g. by chemical-mechanical polishing or blanket etchback techniques, during the practice of the invention.
|Cited Patent
|Filing date
|Publication date
|Sep 11, 1984
|Mar 18, 1986
|Amdahl Corporation
|Integrated circuit multilevel interconnect system and method
|Feb 4, 1985
|Jul 28, 1987
|American Telephone And Telegraph Company, At&T Bell Laboratories
|Device fabrication method using spin-on glass resins
|Jul 26, 1989
|Dec 25, 1990
|Siemens Aktiengesellschaft
|Method for producing a resist structure on a semiconductor
|Jul 2, 1990
|Aug 6, 1991
|Motorola Inc.
|Method for forming a multi-layer semiconductor device using selective planarization
|Dec 21, 1990
|Dec 3, 1991
|Micron Technology, Inc.
|Creation and removal of temporary silicon dioxide structures on an in-process integrated circuit with minimal effect on exposed, permanent silicon dioxide structures
|Oct 4, 1990
|Mar 31, 1992
|Micron Technology, Inc.
|Method for forming self-aligned conducting pillars in an (IC) fabrication process
|Oct 24, 1989
|Mar 30, 1993
|Advanced Micro Devices, Inc.
|Etch stop layer using polymers
|Nov 15, 1991
|Apr 6, 1993
|At&T Bell Laboratories
|Integrated circuit with planar dielectric layer
|Feb 6, 1992
|Sep 21, 1993
|Sgs-Thomson Microelectronics, Inc.
|Semiconductor contact via structure and method
|Mar 1, 1993
|Jan 18, 1994
|Hyundai Electronics Industries Co., Ltd.
|Method for forming miniature contacts of highly integrated semiconductor devices
|Oct 30, 1992
|Dec 6, 1994
|International Business Machines Corporation
|Chip interconnection having a breathable etch stop layer
|Jun 28, 1993
|Feb 28, 1995
|Lsi Logic Corporation
|Process for forming low dielectric constant insulation layer on integrated circuit structure
|Title not available
|Title not available
|Ser. No. 08/234,099, Apr. 27, 1994, Havemann
|Ser. No. 08/234,100, Apr. 27, 1994, Havemann.
|Citing Patent
|Filing date
|Publication date
|Apr 12, 1996
|Jan 21, 1997
|Nec Corporation
|Method for fabricating semiconductor device with interconnections buried in trenches
|Feb 26, 1996
|Mar 17, 1998
|Nec Corporation
|Method of fabricating a self-aligned contact hole for a semiconductor device
|Apr 21, 1995
|Jun 2, 1998
|International Business Machines Corporation
|Method of making a disposable corner etch stop-spacer for borderless contacts
|Jun 5, 1996
|Dec 29, 1998
|Advanced Micro Devices, Inc.
|Integrated circuit having horizontally and vertically offset interconnect lines
|May 8, 1996
|Jan 5, 1999
|Harris Corporation
|Semiconductor device with doped semiconductor and dielectric trench sidewall layers
|Apr 27, 1995
|Apr 6, 1999
|Lucent Technologies, Inc.
|Transistor fabrication method
|Sep 16, 1996
|May 4, 1999
|Kabushiki Kaisha Toshiba
|Semiconductor device and method of manufacturing the same
|Oct 30, 1996
|Jul 6, 1999
|Nec Corporation
|Method for manufacturing a through hole
|Sep 5, 1997
|Oct 5, 1999
|Advanced Micro Devices, Inc.
|Gate pattern formation using a bottom anti-reflective coating
|Jun 24, 1998
|Mar 21, 2000
|Taiwan Semiconductor Manufacturing Company
|Chemistry for etching organic low-k materials
|Dec 5, 1997
|Apr 18, 2000
|Advanced Micro Devices
|Forming local interconnects in integrated circuits
|Dec 22, 1995
|May 23, 2000
|Cypress Semiconductor Corporation
|Method for eliminating lateral spacer erosion on enclosed contact topographies during RF sputter cleaning
|Mar 5, 1998
|Jun 6, 2000
|Fujitsu Limited
|Semiconductor device with self-aligned contact and its manufacture
|May 7, 1997
|Jul 4, 2000
|Applied Materials, Inc.
|Method for applying films using reduced deposition rates
|May 5, 1997
|Aug 8, 2000
|Mitsubishi Denki Kabushiki Kaisha
|Method of fabricating semiconductor device
|Mar 15, 1999
|Sep 5, 2000
|Taiwan Semiconductor Manufacturing Company
|Via patterning for poly(arylene ether) used as an inter-metal dielectric
|May 7, 1997
|Oct 3, 2000
|Applied Materials, Inc.
|Method and apparatus for depositing an etch stop layer
|Jun 4, 1998
|Nov 28, 2000
|Advanced Micro Devices, Inc.
|Metallized interconnection structure and method of making the same
|Sep 4, 1998
|Nov 28, 2000
|Advanced Micro Devices, Inc.
|Integrated circuit having interconnect lines separated by a dielectric having a capping layer
|Dec 22, 1998
|Dec 19, 2000
|Kabushiki Kaisha Toshiba
|Semiconductor device and method of manufacturing the same
|Dec 4, 1998
|Jan 30, 2001
|United Silicon Incorporated
|Method of forming interconnections
|Jun 21, 1999
|May 8, 2001
|Philips Semiconductors, Inc.
|Semiconductor arrangement having capacitive structure and manufacture thereof
|Dec 8, 1997
|May 8, 2001
|Micron Technology, Inc.
|Contact structure for memory device
|Aug 24, 1999
|May 22, 2001
|Hitachi, Ltd.
|Process for manufacturing semiconductor integrated circuit device
|Nov 12, 1998
|Jun 26, 2001
|United Microelectronics Corp.
|Method of manufacturing shallow trench isolation
|Feb 4, 1999
|Jul 10, 2001
|International Business Machines Corporation
|Method of forming a patterned organic dielectric layer on a substrate
|Jun 24, 1998
|Jul 24, 2001
|Taiwan Semiconductor Manufacturing Company
|Method for improving chemical/mechanical polish uniformity over rough topography for semiconductor integrated circuits
|Feb 25, 1999
|Aug 14, 2001
|Taiwan Semiconductor Manufacturing Company
|Self-aligned contact process for a crown shaped dynamic random access memory capacitor structure
|Jun 9, 1999
|Aug 14, 2001
|Nec Corporation
|Semiconductor device and method for making the same
|Oct 16, 1998
|Sep 4, 2001
|Micron Technology, Inc.
|Method of forming a contact using a sacrificial spacer
|Aug 21, 1997
|Nov 6, 2001
|Fujitsu Limited
|Semiconductor device and method for fabricating the same
|May 16, 2000
|Nov 27, 2001
|Applied Materials, Inc.
|Method and apparatus for applying films using reduced deposition rates
|Apr 24, 2000
|Dec 25, 2001
|Fujitsu Limited
|Semiconductor device with self-aligned contact and its manufacture
|Jun 5, 2000
|Apr 16, 2002
|Chartered Semiconductor Manufacturing Ltd.
|Composite silicon-metal nitride barrier to prevent formation of metal fluorides in copper damascene
|Jul 11, 2001
|May 7, 2002
|Nec Corporation
|Semiconductor device and method for making the same
|Aug 4, 1999
|May 28, 2002
|Chartered Semiconductor Manufacturing Ltd.
|Low dielectric constant dielectric layer fabrication method employing hard mask layer delamination
|Sep 16, 1999
|May 28, 2002
|Agere Systems Guardian Corporation
|Process for improving line width variations between tightly spaced and isolated features in integrated circuits
|Feb 5, 1996
|Jun 18, 2002
|Micron Technology, Inc.
|Formation of silicided contact by ion implantation
|May 7, 2001
|Aug 13, 2002
|Koninklijke Philips Electronics N.V.
|Semiconductor arrangement having capacitive structure and manufacture thereof
|May 30, 2001
|Oct 8, 2002
|Micron Technology, Inc.
|Semiconductor processing methods, semiconductor circuitry, and gate stacks
|Oct 19, 1998
|Oct 29, 2002
|Taiwan Semiconductor Manufacturing Company
|Methods of adhesion promoter between low-K layer and underlying insulating layer
|Nov 8, 2000
|Dec 10, 2002
|Advanced Micro Devices, Inc.
|Metallized interconnection structure
|Dec 29, 1995
|Dec 17, 2002
|Intel Corporation
|Contact and via fabrication technologies
|Sep 8, 1999
|Dec 24, 2002
|Alliedsignal Inc.
|Low dielectric-constant dielectric for etchstop in dual damascene backend of integrated circuits
|Dec 6, 2000
|Dec 31, 2002
|Advanced Micro Devices, Inc.
|Resist trim process to define small openings in dielectric layers
|Jan 25, 1999
|Mar 18, 2003
|Chartered Semiconductor Manufacturing Ltd.
|Method for fabricating local metal interconnections with low contact resistance and gate electrodes with improved electrical conductivity
|Feb 28, 2001
|Mar 25, 2003
|International Business Machines Corporation
|Method for dual-damascence patterning of low-k interconnects using spin-on distributed hardmask
|Aug 3, 2000
|Apr 22, 2003
|Kabushiki Kaisha Toshiba
|Stacked capacitor-type semiconductor storage device and manufacturing method thereof
|Oct 27, 1997
|Apr 22, 2003
|Micron Technology, Inc.
|Undoped silicon dioxide as etch mask for patterning of doped silicon dioxide
|Sep 19, 2001
|Nov 4, 2003
|Fujitsu Limited
|Semiconductor device and method for fabricating the same
|Aug 17, 2000
|Apr 13, 2004
|Micron Technology, Inc.
|Composition of matter
|Jun 25, 2001
|Apr 27, 2004
|Micron Technology, Inc.
|Semiconductor processing methods of forming an utilizing antireflective material layers, and methods of forming transistor gate stacks
|Aug 10, 2001
|Aug 31, 2004
|Kabushiki Kaisha Toshiba
|Non-volatile semiconductor memory device having memory cell array suitable for high density and high integration
|Mar 31, 2000
|Aug 31, 2004
|Cypress Semiconductor Corporation
|Structure having reduced lateral spacer erosion
|Mar 31, 2003
|Nov 23, 2004
|Advanced Micro Devices, Inc.
|Semiconductor device including a field effect transistor and a passive capacitor having reduced leakage current and an improved capacitance per unit area
|Dec 23, 1998
|Dec 7, 2004
|Micron Technology, Inc.
|Semiconductor devices, and semiconductor processing methods
|Aug 12, 2003
|Dec 21, 2004
|Fujitsu Limited
|Semiconductor device and method for fabricating the same
|Mar 17, 2003
|Jan 25, 2005
|Kabushiki Kaisha Toshiba
|Stacked capacitor-type semiconductor storage device and manufacturing method thereof
|May 30, 2002
|Feb 22, 2005
|Micron Technology, Inc.
|Semiconductor processing methods of transferring patterns from patterned photoresists to materials, and structures comprising silicon nitride
|Jun 19, 2001
|Apr 12, 2005
|Micron Technology, Inc.
|Semiconductor processing methods
|Jul 31, 2003
|Sep 13, 2005
|Fujitsu Limited
|Semiconductor device using low-k material as interlayer insulating film and including a surface modifying layer
|May 25, 2000
|Nov 22, 2005
|Micron Technology, Inc.
|Gate stack structure
|Aug 30, 2001
|Jan 24, 2006
|Micron Technology, Inc.
|Etchant gas composition
|Jul 20, 2004
|Apr 4, 2006
|Kabushiki Kaisha Toshiba
|Stacked capacitor-type semiconductor storage device and manufacturing method thereof
|May 30, 2002
|May 16, 2006
|Micron Technology, Inc.
|Semiconductor processing methods of transferring patterns from patterned photoresists to materials, and structures comprising silicon nitride
|Jul 12, 1999
|Jun 13, 2006
|Zilog, Inc.
|Process to improve high performance capacitor properties in integrated MOS technology
|Jul 25, 2002
|Jun 27, 2006
|Micron Technology, Inc.
|Low k interlevel dielectric layer fabrication methods
|May 30, 2002
|Jul 18, 2006
|Micron Technology, Inc.
|Semiconductor processing methods of transferring patterns from patterned photoresists to materials, and structures comprising silicon nitride
|Mar 19, 2002
|Jul 18, 2006
|Micron Technology, Inc.
|Low K interlevel dielectric layer fabrication methods
|Dec 18, 2003
|Aug 22, 2006
|Infineon Technologies Ag
|Method for production of contacts on a wafer
|Dec 19, 2005
|Sep 19, 2006
|Kabushiki Kaisha Toshiba
|Non-volatile semiconductor memory device having memory cell array suitable for high density and high integration
|Mar 19, 2004
|Dec 19, 2006
|Micron Technology, Inc.
|Semiconductor processing methods of forming and utilizing antireflective material layers, and methods of forming transistor gate stacks
|Jan 18, 2006
|Mar 6, 2007
|Kabushiki Kaisha Toshiba
|Stacked capacitor-type semiconductor storage device and manufacturing method thereof
|Sep 12, 2001
|Apr 24, 2007
|Micron Technology, Inc.
|Structures comprising a layer free of nitrogen between silicon nitride and photoresist
|Jul 13, 2005
|Aug 14, 2007
|Fujitsu Limited
|Semiconductor device using low-K material as interlayer insulating film and its manufacture method
|Jul 7, 2005
|Sep 25, 2007
|Micron Technology, Inc.
|Gas compositions
|Feb 10, 2004
|Oct 9, 2007
|Micron Technology, Inc.
|Compositions of matter and barrier layer compositions
|Jul 28, 2006
|Oct 9, 2007
|Micron Technology, Inc.
|Formation of self-aligned contact plugs
|Jun 26, 2002
|Dec 11, 2007
|Kabushiki Kaisha Toshiba
|Non-volatile semiconductor memory device having memory cell array suitable for high density and high integration
|May 30, 2002
|Oct 14, 2008
|Micron Technology, Inc.
|Semiconductor processing methods of transferring patterns from patterned photoresists to materials, and structures comprising silicon nitride
|May 17, 2005
|Dec 30, 2008
|Micron Technology, Inc.
|Etching methods
|Nov 4, 2005
|Apr 21, 2009
|Micron Technology, Inc.
|Low k interlevel dielectric layer fabrication methods
|Apr 26, 2000
|Aug 18, 2009
|Micron Technology, Inc.
|Circuitry and gate stacks
|Jun 22, 2007
|Aug 25, 2009
|Kabushiki Kaisha Toshiba
|Non-volatile semiconductor memory device having memory cell array suitable for high density and high integration
|Aug 31, 2005
|Dec 1, 2009
|Micron Technology, Inc.
|Semiconductor devices having antireflective material
|Sep 10, 2008
|Dec 29, 2009
|Micron Technology, Inc.
|Semiconductor processing methods of transferring patterns from patterned photoresists to materials
|Sep 30, 2002
|Jun 15, 2010
|Globalfoundries Inc.
|Resist trim process to define small openings in dielectric layers
|Nov 29, 2005
|Aug 3, 2010
|Zilog, Inc.
|Process to improve high-performance capacitors in integrated MOS technologies
|Jul 7, 2006
|Sep 28, 2010
|Micron Technology, Inc.
|Semiconductor constructions having antireflective portions
|Aug 29, 2005
|Nov 2, 2010
|Micron Technology, Inc.
|Semiconductor constructions
|Jul 20, 2010
|Sep 13, 2011
|Ixys Ch Gmbh
|Process to improve high-performance capacitors in integrated MOS technologies
|May 31, 2011
|Dec 4, 2012
|Ixys Ch Gmbh
|Method of fabricating high-performance capacitors in integrated MOS technologies
|Jan 23, 2014
|Jun 23, 2015
|International Business Machines Corporation
|Bi-layer gate cap for self-aligned contact formation
|Dec 6, 2000
|Jun 6, 2002
|Srikanteswara Dakshina-Murthy
|Resist trim process to define small openings in dielectric layers
|May 30, 2002
|Oct 17, 2002
|Deboer Scott Jeffrey
|Semiconductor processing methods of transferring patterns from patterned photoresists to materials, and structures comprising silicon nitride
|Dec 18, 2003
|Jul 22, 2004
|Werner Graf
|Method for production of contacts on a wafer
|Jan 13, 2004
|Jul 29, 2004
|Applied Materials, Inc.
|Low dielectric constant film produced from silicon compounds comprising silicon-carbon bond
|Feb 10, 2004
|Aug 19, 2004
|Weimin Li
|Compositions of matter and barrier layer compositions
|Aug 13, 2004
|Jan 27, 2005
|Richard Holscher
|Semiconductor processing methods
|Oct 20, 2003
|Apr 21, 2005
|Kim Hyun T.
|Formation of self-aligned contact plugs
|Nov 30, 2004
|Jun 30, 2005
|Hynix Semiconductor Inc.
|Method for forming a contact of a semiconductor device
|May 17, 2005
|Sep 29, 2005
|Kei-Yu Ko
|Etch-processing apparatus
|May 17, 2005
|Oct 6, 2005
|Kei-Yu Ko
|Etching methods
|Jul 13, 2005
|Nov 10, 2005
|Fujitsu Limited
|Semiconductor device using low-K material as interlayer insulating film and its manufacture method
|Jul 7, 2005
|Jan 19, 2006
|Kei-Yu Ko
|Gas compositions
|Aug 31, 2005
|Feb 23, 2006
|Richard Holscher
|Semiconductor processing methods
|Dec 19, 2005
|May 11, 2006
|Kazuhiro Shimizu
|Non-volatile semiconductor memory device having memory cell array suitable for high density and high integration
|Jan 18, 2006
|Jun 15, 2006
|Kabushiki Kaisha Toshiba
|Stacked capacitor-type semiconductor storage device and manufacturing method thereof
|Aug 29, 2005
|Oct 5, 2006
|Micron Technology, Inc.
|Semiconductor constructions
|Jul 28, 2006
|Nov 23, 2006
|Kim Hyun T
|Formation of self-aligned contact plugs
|Jul 7, 2006
|Nov 30, 2006
|Richard Holscher
|Semiconductor constructions
|Sep 8, 2006
|Jan 4, 2007
|Weimin Li
|Semiconductor processing methods
|Apr 21, 2009
|Feb 25, 2010
|Taiwan Semiconductor Manufacturing Company, Ltd.
|Novel high-k metal gate structure and method of making
|Dec 18, 2002
|Jul 15, 2004
|Infineon Technologies Ag
|Verfahren zur Herstellung von Kontakten auf einem Wafer
|Dec 18, 2002
|Feb 21, 2008
|Qimonda Ag
|Verfahren zur Herstellung von Kontakten auf einem Wafer
|Jun 4, 1999
|Jul 6, 2006
|Samsung Electronics Co., Ltd., Suwon
|Verfahren zum Ausbilden eines selbstpositionierenden Kontakts in einem Halbleiterbauelement
|Aug 6, 1998
|Feb 18, 1999
|Commissariat Energie Atomique
|Method for producing an interconnection path through a semiconductor material
|U.S. Classification
|International Classification
|Cooperative Classification
|European Classification
|Aug 23, 1994
Owner name: TEXAS INSTRUMENTS INCORPORATED, TEXAS
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:HAVEMANN, ROBERT H.;REEL/FRAME:007131/0823
Effective date: 19940822
|Jun 24, 1999
|Fee payment
Year of fee payment: 4
|Jun 27, 2003
|Fee payment
Year of fee payment: 8
|Jul 30, 2003
|Maintenance fee reminder mailed
|Jun 21, 2007
|Fee payment
Year of fee payment: 12


text:
Leave a Review
The combination of these flavors (uncommon to most Americans' palates) is wonderful! We are having it again for dinner (once a month at least)flag if inappropriate
This was a good, healthful reciped and we had all the ingredients on hand - but not especially exciting.flag if inappropriate
We were limited in our ingredients in the house so this was a terrific meal to make. I subbed fresh spinach for the sage and used an acorn instead of butternut. Also, instead of water used chicken broth--this gave it a nice rich flavor. We served it with a great salad and warmed foccacia.flag if inappropriate
We thought this was very good. I couldn't find the fresh sage in freezer so I used the fresh basil in stead. Also used the water from the squash in place of cooking liquid from pasta.flag if inappropriate
Very good; it's a keeper. I shredded the squash so it cooked quickly in my electric wok--the shreds cling to the pasta nicely also. I increased the amount of sage and added some leftover diced ham. I sprinkled the parmesan on individual servings instead of adding it to the pot as I knew I'd have leftovers and thought it would reheat better that way. The next day I cooked more pasta and added some fresh asparagus cut in one inch pieces. I also increaed the ham and my husband liked the second day's dish better.flag if inappropriate

subset: commoncrawl


text:
A Few Highlights from QConSF2013- Part 1 of 2
On each day of the 3-day conference at the inviting environs offered at the Hyatt there was a jam-packed schedule of speakers, exhibits and activities that made for some difficult decisions as to which tracks and what happening to attend.
Healthcare.gov Performance Analysis by AppDynamics
Augmenting the roster of tribulations haranguing Obamacare and the healthcare.gov website comes a technical deep-dive performed by leading performance monitoring organization AppDynamics that paints a picture of a sophomoric development initiative used to build that site.
AppDynamics Lite 2 Released - Adds Monitoring Support for Free
Application Performance Measurement (APM) vendor AppDynamics has released AppDynamics Lite version 2.0, bringing new features from their commercial product into the free version.
The application intelligence company
- Automated application behavior learning
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- Low production overhead (production ready 24x7)
Start your Free Trial of fully featured AppDynamics Pro. Keep AppDynamics Lite free forever after the trial.
Featured Blog Content
Unified Monitoring: This Is What The Future Looks Like
By Kalyan Ramanathan | June 23, 2015
Scaling Your Application Efficiently – Horizontal or Vertical?
By Eric Smith | March 24, 2015
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11th Annual
Mancos Valley Balloon Festival & Street Fair
September 25 - 27th, 2015
Join us for balloon rides, live music, carriage rides, our "Pilots & Heroes" BBQ dinner, and much more!
Proceeds will benefit: Operation Second Chance and Medicine Horse Center. These two local nonprofit organizations provide vital services here in the Mancos Valley and we are proud to support their contributions towards a happier, healthier community.
Vendors: We still have a few spaces left, for you to showcase your wares at this major area event.
For more information on becoming a vendor, please contact Marie at
Mancos Valley Balloon & Art Festival schedule of events:
Friday Sept. 25th
6:45 am Inflation for first flight and Sponsor Rides, in Boyle Park.
4:00 pm Grand Summer Nights--stores and balloon ride headquarters open on Grand Avenue, in Downtown Mancos.
Saturday Sept. 26th
6:45 am Inflation for second flight. Tether rides available for $10 per person, weather permitting. (Boyle Park)
10:00 am - 4:00 pm Art & Street Fair: Carriage rides, live music, art & food vendors and lot of extra fun, on Grand Avenue.
6:00 pm "Pilots & Heroes" BBQ Dinner to take place on Bauer House Lawn, in a comfy, heated tent. Limited seating--get your tickets NOW! Tickets are $20 per person, and are available at the Mancos Visitors Center and at the Balloon Ride Sales Headquarters on Grand Avenue, next to Olio.
> Silent Auction inside Bauer House
> Music and dancing on the patio
> Drawing for the Landowner's Lottery will take place during dinner. (In Mancos Balloon Fest tradition, landowners that allow balloonists to land on their property are eligible to win a free balloon ride. For more information, call Bobbi at 970-560-0203.)
Sunday Sept. 27th
6:45 am Inflation for third flight. Tether rides available for $10 per person, weather permitting. (Boyle Park)
10:00 am - 4:00 pm Art & Street Fair continues: More carriage rides, children's train rides, art & food vendors.
7:15 pm Preparation for the beautiful Balloon Glow event in Boyle Park. Free!
Thank you for supporting the Mancos Valley Balloon Festival & Street Fair!
Proceeds will benefit Operation Second Chance and Medicine Horse Center.
Mancos, Colorado: Where the West Still Lives
At 7,000 feet elevation Mancos sits on the cusp of magnificent mountains and forests where you can camp, fish, mountain bike and hike.
few miles to the west is Mesa Verde National Park – a World Heritage site. Cliff dwelling home of the Ancestral Puebloans, it brims with spiritual wonder and silent mystery.
The town of Mancos is an historic community. The town retains its pride in history with several buildings on the State and National Historic Registers while the downtown business district offers visitors art galleries, top notch dining options, as well as a distillery, a coffee house and one of the oldest continuously operating bars in Colorado.
Accommodations range from locally owned motels and charming and distinctive B & B's to camping at the nearby Mancos State Park Recreation Area, known locally as Jackson Lake.
And this is only the beginning. Whatever the season the Mancos River Valley is here to feed the soul. Our ranchers, artists, writers and business people make sure your visit is complete. The Mancos Valley is truly where the old west meets the new.


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This quirky Pandora table lamp is a great accessory for your home. Its circular, chrome effect hollow base is unique and edgy and the oval cream shades adds some style. The contemporary lamp is made from metal, fabric and plastic and comes fully assembled.
Catalogue Number: 212-8228
- Cream & chrome-plated finish
- Requires 60W GLS bulb
- H46xW34xD22cm
Sorry, there are currently no sellers for this product.


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To enquire further about advertised positions, please contact the individual business directly.
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Vacancies will be published for four months, at which time, if the position is still vacant, members should re-submit the vacancy details.
Automotive Technician / Mechanic - Manukau »
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We are looking for an experienced Mechanic to join our team, responsible for a range of automotive servicing and mechanical repairs. Phone David on 09 2784301
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Sales Executive - New Plymouth »
Posted: 29-Jul
Are you focused on your future?
When you join W.R. Phillips Ltd you'll find unlimited opportunities to evolve, excel and amplify your success with a company that's continually redefining the automobile industry. If you're ready to make your mark with a team that thrives on collaboration, you need to consider a future as Sales Executive at W.R. Phillips Ltd. More »
Mechanic - Matakana »
Posted: 14-Jul
LIFESTYLE CHANGE – come to Matakana - premium NZ countryside and magnificent coastline - 60k north of Auckland CBD.
Trade qualified, experienced mechanic wanted. More »
Office manager - Matakana »
Posted: 14-Jul
LIFE'S A BEACH in Matakana - but we need an Office Manager for our small automotive repair business. More »
Mechanic - Coatesville »
Posted: 07-Jul
Experienced, energetic and enthusiastic technician required for busy north shore workshop. Experience on European models preferred. Refs essential. Good remuneration for the right person.
Send CV to email@example.com More »
Brake Disc Machinist - North Shore, Auckland »
Posted: 01-Jul
Required to provide mobile brake disc machining services in Auckland. Van, equipment and training provided.
Full clean driver's licence essential. Candidate must be responsible, reliable and trustworthy. More »
Automotive technician/Mechanic - Arrowtown »
Posted: 30-Jun
Wanted: Experienced and qualified mechanic. Prefer AVIC registered but not essential.
Position is in beautiful Arrowtown and available immediately! More »
Automotive mechanic/technician - Browns Bay, North Shore, Auckland »
Posted: 21-Jun
Qualified technician experienced in European brands required for well equipped Browns Bay workshop offering good working conditions, modern equipment & competitive remuneration. More »
Mechanic - Upper Moutere, Nelson »
Posted: 16-Jun
Busy rural workshop requiring an extra set of hands. More »
Automotive Technician - Brightwater, Tasman »
Posted: 08-Jun
This job is for a automotive technician. If you enjoy variety then this is the job for you!
In this position, you will be working on a great range of light vehicles including vintage models. More »


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Comfortable loft 2 minutes from the sea
from £44 /night help Price for guests, Nights
from £44 /night help Price for guests, Nights
Estimated nightly price based on a weekly stay. Excludes fees (if applicable). Enter your dates to see the total cost.
Studio / No Bedrooms / sleeps 4 Home 1741822
Availability Your dates are available
Studio / No Bedrooms / sleeps 4
|Key Info
This cozy loft features a comfortable living-sleeping room, furnished with a double sofa bed,spacious wardrobe for storage,flat screen TV,table and chairs.
The corner kitchen is equipped with fridge,cutlery complete,stoves and pans.A convenient staircase leads to a mezzanine room with an extra double bed.
The bathroom comes with a large shower,wc-bidet.Free Wi-Fi connection,air conditioning/heating.
|Sleeps up to 4, Studio
|Car not necessary
|Nearest travel links
|Nearest airport: Napoli Capodichino 50 km, Nearest railway: Circumvesuviana Sant'Agnello 1 km
|Family friendly
|Great for children of all ages
|No pets allowed, No smoking at this property
Features and Facilities
|Internet access
|Central heating, Air conditioning, TV, Wi-Fi available
|Toaster, Iron, Hair dryer
|Cooker, Microwave, Fridge
|1 bathrooms of which 1 Family bathrooms
|1 Sofa beds, Double beds (1), Dining seats for 4
|Linen provided, Towels provided
|Shared garden
|Not suitable for wheelchair users
The Campania region
From Regginè Sorrento Apartments our guests can conveniently reach the most beautiful and visited places in the world.A panoramic walk along the tuff cliff leads to the enchanting town of Sorrento whose beauty inspired artists such as Scott,Dickens,Byron,Keats,Nietzsche and Wagner. Make a daily trip to admire Pompei excavation,perfectly preserved from Vesuvio eruption in 79 AD, sunbathe in the exclusive beaches of Capri ,Ischia and Positano or visit the UNESCO World Heritage Site of Amalfi Coast.
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This holiday home hasn't got any reviews yet. The average rating on Holiday Lettings is four out of five. This place could be newly added or perhaps it's a well kept secret. Either way, it's time to reveal all.
This advert is created and maintained by the advertiser; we can only publish adverts in good faith as we don't own, manage or inspect any of the properties. We advise you to familiarise yourself with our terms of use.
You're booking with
Regginè A.
95% Response rate
Calendar last updated:25 Sep 2015
Based in Italy
- English
- French
- Spanish
- German
- Italian


text:
All sold out!
Distrezz-it-all v2.0
With the Zutter Distrezz-it-All Electric Distressing Tool, you can add a little wild, worn, and textured design to your creations in a blink of an eye. Change it up from your straight-edge routine and start distressing with Zutter!
Note: note that this will not work in most international outlets
Uses: cardstock, wood, leather, chipboard
Special features: distress it all electronic tool, lightweight, compact, durable, includes dust compartment for easy clean up, ac/dc adapter


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As the marketing manager for Bridgeline Digital, a content management software company, Ryan Hadfield's primary function is to generate leads and ensure that customers are making the most of the iAPPS platform. "While lead acquisition is the heart of what I do, I love nurturing current customers and prospects with weekly segmented email campaigns that include white papers, ebooks, and other forms of thought leadership," he says.
Mar 19, 2013
Pinfluencer, a provider of marketing and analytics for Pinterest, announced it has rebranded itself as Piqora, The Complete Marketing Suite for Pinterest, and has launched Gallery, a new fully-embeddable, social e-commerce product for brands using Pinterest and Facebook. Gallery by Piqora is a tablet optimized, automated visual feed of a brand's in-stock, top products trending on social networks. This creates a social e-commerce experience for consumers and helps marketers convert their social traffic. The new Piqora Suite now encompasses analytics, promotions, content management, and social e-commerce.
Piqora customers already using Gallery on Facebook and special landing pages include Cost Plus World Market, Overstock and Buckle. Gallery is an automated merchandizing engine that uses machine learning and social design to deliver trending products that are relevant to the e-commerce context of the user. It builds a page around a brand's socially curated top pins, pulling in price and product title dynamically from the product page of a company's website. By cutting and pasting a short line of code, brands can redirect the users to these visual landing pages, embed their trending products on any web page, landing page or even on a Facebook tab.


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Current Time: 10/13/2015 9:46:54 AM Pacific Daylight Time (4:46 PM GMT)Last Updated: 2015-04-22T23:59:50Z on 4/22/2015 4:59:50 PM Pacific Daylight Time (11:59 PM GMT) Rendered From:UnknownCoordinates are in the WGS84 datum


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Free Inside Delivery
Product Information:
Seven is a suitable table for dining areas and ideal for 8 persons. It features a toughened glass top, making it both sturdy and safe, and a metal frame with a stylish and modern look.
Product Details
Additional Documents
Weights & Dimensions
Large Size
|Top Material: Glass
|Base Material: Metal
|Leaf Included: No
|Seating Capacity: 8
|Table Base Type: Four leg
|Base Finish: Chrome
|Distressed: No
|Reclaimed Wood: No
|Leg Material: Metal
|Formal or Casual Setting: Formal
|Table Shape: Rectangular
|Storage Compartment: No
|Foldable: No
|Country of Manufacture: Italy
About the ManufacturerCalligaris was founded in 1923, when Antonio Calligaris produced his very first chair -- the "Marocca" model. In the 1930's, Antonio passed the family-owned business onto his son, Romeo. After thirty years, Romeo Calligaris was ultimately able to develop his father's once small, Italian furniture store into an innovative, industry-leading company. Calligaris became so successful, that by the 1990's, the company began selling its products internationally, and expanded into four new countries, including the United States. br/br Today Calligaris continues its legacy as an industry leader. With a strong focus on technology and development, Calligaris still finds its most important resource is the people who develop and manufacture its products, enabling the company to stay at the forefront of the furniture industry. The results of this are found in the "freedom of living? concept, which emphasizes extreme versatility and functionality. This allows the consumer to shape their living space to exactly their specifications.
More About This Product
Free Inside Delivery
Ships to:
Ships via: Inside Entryway with Upgrade Options
Enter your shipping zip or postal code to calculate shipping estimatesGet Delivery Estimate
We want you to love it. If you don't, you may return your purchase within 30 days of delivery. All you need to do is visit our Self-Service Return Center for instructions. Return credits are issued within 24 hours once the item is received and inspected. Please note that shipping charges are non-refundable. The cost of return shipping will be deducted from your refund. 30-Day Return Policy
Overall Rating
Based on 5 reviews
Customer PhotosAdd your own photo
The design is simple but elegant. Rene from Anaheim, CA on 11/25/2014 – Verified Buyer
Very satisfied with the quality of this product! It was even delivered ahead of the date promised. You can't go wrong with this modern dining table. If you want a very contemporary dining table, this is it!
Was this helpful? Yes 0 No 0
Beautiful table. Andrea from San Jose, CA on 08/26/2015 – Verified Buyer
Exactly what we were looking for to use as a small conference table. Very sturdy.
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good looking table Marina from New York, NY on 04/13/2015 – Verified Buyer
This table looks nice. very modern, not well suited for a contemporary or traditional aesthetic.
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Really Nice Andrea from NY on 10/06/2014 – Verified Buyer
I like the quality of this product and it is exactly what I expected. It seems it is made well and is exactly as described on the website.
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Anonymous from Virginia on 12/10/2013 – Verified Buyer
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Cast in a different mould to its historical City counterparts, Haberdashers' Hall is the Livery Hall
of the Haberdashers' Livery Company. Opened in 2002 and designed by celebrated British architect Sir Michael Hopkins, its contemporary look and feel is highly sought after for festive entertaining.
This year there is no specific theme in an attempt to keep things traditional. Guests can enjoy a glass of sparkling wine in the gallery overlooking the knockout Courtyard before dinner served in
the equally stunning Livery Hall. Dancing also in the hall rounds off the evening.
Are you the venue owner?
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Liberty Mutual Insurance Bodily Injury Claims Specialist Interview Questions
Interview Experience
Interview Experience
Getting an Interview
Getting an Interview
Interview Difficulty
Interviews for Top Jobs at Liberty Mutual Insurance
- Sales Representative (78)
- Customer Service Representative (62)
- Claims Adjuster (31)
- Claims Specialist (27)
- Intern (19)
- IT Analyst (18)
- Insurance Sales Representative (17)
- Claims Representative (17)
- Product Management (16)
- Insurance Agent (12)
- Insurance Assistant (12)
- Customer Claims Representative (11)
- Analyst Development Program (10)
- Product Analyst (10)
- Business Systems Analyst (9)
- Inside Auto Claims Representative (8)
- Sales (8)
- Actuarial Assistant (8)
- Senior Business Analyst (8)
- Actuarial Intern (7)
- Actuarial Analyst (7)
- Underwriter (7)
- Analyst (7)
- Senior Customer Claims Representative (7)
- Project Manager (7)
- Claims Training Program (7)
- Associate Claims Case Manager (7)
- Claims Intern (7)
- Bodily Injury Claims Specialist (6)
7 Candidate Interview Reviews Back to all InterviewsSort: Popular Date Difficulty
Bodily Injury Claims Specialist Interview
I applied online. The process took 3 weeks. I interviewed at Liberty Mutual Insurance (Boston, MA).
It began with a 45-60 minute phone interview, which followed a two hour in person interview with 4 different supervisors, and ended with a final interview by two managers. After they extended the job offer, you're asked to submit paperwork for a background check (typical, you would think) - but just remember that it is an exhaustive background check. They kindly provide you with a copy of their findings, however.
Interview Questions
- Describe a difficult experience with a customer or employer; Why do you want to work for Liberty Mutual? Negotiation and time management questions also were included. Answer Question
Other Interview Reviews for Liberty Mutual Insurance
Helpful (4)
Bodily Injury Claims Specialist InterviewNo OfferNeutral Experience
Phone interview. The interviewer was very professional and scripted. There was no telling whether any kind of rapport was built. Interviewer was very nice and explained the opportunity for advancement, that the benefits are very good. Asked what I am currently making. Describe your current daily duties. Why Liberty Mutual. How I deliver bad news. Waiting on a call back. Said it would take a week for the information taken in interview to move on to next step.
Interview Questions
- Describe how you deliver bad news Answer Question
- Describe daily duties Answer Question
- What is current salary Answer Question
- Why Liberty Mutual? Answer Question
Helpful (2)
Bodily Injury Claim Specialist InterviewAccepted OfferAverage Interview
I applied online. The process took 3 weeks. I interviewed at Liberty Mutual Insurance (Duluth, GA).
I actually went to the open house for claim positions where they actually did on the spot meet & greets with team managers. A few days after applying I received an email grom the recruiter for a face to face interview that following week. Most people get phone interviews but having been to the open house was a substitute for the phone interview. The 1st interview was about 45 mins and was a series of scenario questions. They are looking for a specific instance for each scenario and expect pretty in depth answers.
Interview Questions
- Tell me about a time you had to deliver bad news. How did you handle it and what was the result? Answer Question
- How would you handle conflict with a peer in the workplace? Answer Question
- Why are you leaving your current employer? How long would it take for you to make a contribution to Liberty Mutual? Answer Question
No negotiation. They asked what salary I was comfortable with and gave me just that. The salary is extremely fair with benefits, bonuses, and advancement opportunities.
Helpful (4)
Bodily Injury Claims Specialist InterviewNo Offer
The interview was basically behvioral based. Tell me about a time, yadda, yadda, yadda. The managers who interviewed me laid back and made me feel very comfortable. During the interview they asked me a techical insurance term, which was different because I never completed an interview where they actually tested my knowledge on the spot.
Interview Questions
- Explain Comparative Negligence. 1 Answer
Bodily Injury Claims Specialist InterviewNo OfferAverage Interview
I applied online. The process took 4+ weeks. I interviewed at Liberty Mutual Insurance (Marlton, NJ).
Initial contact was via telephone interview a few weeks after I applied. It was pretty brief, very general questions. Next they asked me to come in for an in person interview. I took a written "exam" that took about 20-30 minutes (situational set up and questions). Once that was done, the interviewer asked me a variety of behavioral based types of questions for about 30 minutes to an hour. Then he walked me around the office a little bit before telling me someone would call me. About 15 minutes later, they called me again to see if I could meet with another individual in the department so I drove back. After waiting for 10 minutes or so in a conference room, the second meeting lasted about 15 minutes and I was told someone would be in touch. It took about a month after that before they made their decision.
Interview Questions
- Some of the behavioral questions were difficult to answer immediately. Answer Question
Bodily Injury Claims Specialist InterviewNo OfferNeutral ExperienceAverage Interview
I applied online. The process took 2 weeks. I interviewed at Liberty Mutual Insurance (Duluth, GA) in December 2013.
I applied online with Liberty Mutual in November, 2013. I received a phone call from the HR recruiter approximately 1 month later. We scheduled a phone interview which took about 30 minutes. The recruiter advised it would be approximately 2 weeks before I heard anything about moving forward. I received a call 2 days later to schedule an in person interview. The hiring manager I was scheduled to interview with was not present, so I interviewed with someone else instead. The interview took approximately 1 hour.
Interview Questions
- The interviewer informed me that he would be going down a list of behavioral questions and would be taking notes while I was responding. Answer Question
Bodily Injury Claims Specialist InterviewNo OfferNeutral ExperienceAverage Interview
I applied through other source. The process took a week. I interviewed at Liberty Mutual Insurance (Wallingford, CT).
I got contacted by an HR recruiting asking if I was interested in the job. I said yes and we set up an in office interview. The first interview was held with two managers. After the interview I sat down with a claims specialist for about 10 minutes to see what the job was all about. After this I left and later that day they contacted me wanting to schedule a second interview. The second round interview consisted of two senior level managers who had been with the company for a while. They posed much harder questions than the first round. Overall, pretty good experience, I just realized I wasn't interested in the job so didn't show much enthusiasm.
Interview Questions
- Give an example of a time that you've exhibited leadership skills Answer Question
Is this helpful? The community relies on everyone sharing – Add Anonymous Interview Review


text:
Tokyo: Lin Dan of China has once again proved his reputation
Almere: When Malaysians Koo Kien Keat and Tan Boon Heong are
Tokyo: Viktor Axelsen advanced to the final of Japan Open Su
Kuala Lumpur: It's getting hard to keep track of all the mix
Beijing: HOT! HOT! HOT! Lin Dan shows off his super fit and
By: BadmintonPlanet.com When He Loses, You Stay With Him!Wh
11-10-2015 Hits:570 Badminton News
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Scoring System for Badminton Doubles Badminton Doubles is a match consists of the best of 3 games of 21 points. Every time there is a serve – there is a point scored. The
Scoring System for Badminton Singles Badminton Singles is a match consists of the best of 3 games of 21 points. Every time there is a serve – there is a point scored. The
Usually, when I am coaching my new students, the first thing I check is how they hold the badminton racket. It is important and easy to learn
When playing badminton, it is important to develop tactics and strategies a game plan to out-think and beat your opponent. By identifying and focus


text:
The future is static.
Death Abyss – Dominate Through Will
We travel from flame to flame. Ruling from the shadows.
18_09_2009 Modulgate, Lituania, Vilnius
03_10_2009 Kozzmozz, Belgium, Ghent
06_11_2009 Detached, UK, Leeds (Special Live set with The 65D Mavericks)
18_12_2009 Cross, Prague, Czech Rep
19_12_2009 Paluba, Soběslav, Czech Rep
05_02_2010 House Of God, Birmingham, UK
26_02_2010 Pure Techno, Hull UK
16_03_2010 The Underground, Dublin


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It s the most demonic structure in WWE, and careers have been permanently altered by its unforgiving steel. Some of the biggest superstars in WWE history, including Shawn Michaels, Mankind, Undertaker, Triple H, Batista, and more, have had signature moments in the Cell. Now, for the first time, fans can watch the greatest Hell in the Cell match in WWE history as they are all featured in their entirety in this collector s set.
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Not something for a young wrestling fan to watch. Bought it for my son who loved the Undertaker, Wouldn't allow him to see it as it was way too violent. Read morePublished 5 months ago by writers den
The unforgiving steel cage. Always the arena to settle a score. All of the matches were great. I wish that today that when I see a steel cage match on WWE today blood is very... Read morePublished 11 months ago by Joseph
Brought this dvd for my grand sons...they loved it....I was told "YOU ARE THE BEST"Published 12 months ago by cruiser


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Martin Marietta Materials
Martin Marietta Materials (NYSE: MLM) is in the aggregate, chemical, and composite material business. It is the second largest producer of crushed stone, sand, and gravel in the United States behind Vulcan Materials Company. It is a leading U.S. producer of magnesia-based chemical products used as additives in applications including ceramics, paper, sugar, animal feed, and water treatment. It produces domolitic lime used as a fluxing agent by the steel industry. It is a supplier of fiber-reinforced polymer products for use in infrastructure such as panels and bridge decks and transportation components such as truck trailers and railroad cars.
Source: Wikipedia
Some of this data may be out of date
State influence data from the National Institute on Money in State Politics changed in format and availability during the 2013-2014 election cycle. While we work to integrate their new style of data release, state-level campaign finance data for the 2014 cycle and beyond will be unavailable. We apologize for the inconvenience, but heartily recommend trying out their snazzy new site at FollowTheMoney.org!
Campaign Finance$356,597 Given
Figures are based on itemized contributions reported to the Federal Election Commission and state agencies. Please note that:
- contributions under $200 are not reported, and so are not included in totals.
- only contributions from individuals and organizations to candidates are included. Various accounting measures and more exotic contribution types are excluded.
- contributions are matched based on organization and recipient name reported within each election cycle. Contributions using an incorrect or non-standard version of the name may be missed.
- corporate name changes and mergers may cause figures to differ from those of the Center for Responsive Politics.
- organization totals include known subsidiaries of the organization.
For more information, please see our campaign finance methodology page. Lobbyist bundling data is described on our lobbyist bundling methodology page.
state-level data is not available in bulk for 2014. for current state data, browse http://followthemoney.org/
Top Recipients
- PAC Color Block
- Organization's PAC(s)
- Employee Color Block
- Associated Individuals
Republicans vs. Democratsin dollars. "Other" includes 3rd parties and organizations without official party affiliation.
State vs. Federalin dollars
Top PAC Recipients
- PAC Color Block
- Organization's PAC(s)
- Employee Color Block
- Associated Individuals
Lobbying$970,000 Spent
Figures are based on lobbying activity reported to the Senate Office of Public Records. Reported dollar amounts are required to be accurate only to the nearest $20,000. For organizations whose primary business is lobbying, we display total income and top clients. For organizations that are not primarily lobbying firms, we display total amount spent on lobbying and top lobbying firms hired.
For more information, please see our lobbying methodology page.
Lobbying on Behalf of Martin Marietta Materials
Names of Lobbyists
Most Frequently Disclosed Lobbying Issues
- Defense,
- Transportation,
- Environment & Superfund
RegulationsMentioned in 57 dockets
All data is based on documents downloaded from Regulations.gov. The first table shows mentions: all documents that include the name of the company anywhere in the document or document metadata. The second table shows submissions: all documents where the submitter metadata included the company name. Each table shows the top 10 dockets, ranked by number of occurrences.
Matches are based on a search for the company name. Variations in the company name, such as acronyms, nicknames or alternate names may cause documents to be missed. The mention of a company name in a document may be incidental and does not necessarily indicate that the company has any relevance to the document. Company names that are common English words may erroneously match with text that is not referring to the company.
Not all agencies submit public comments to Regulations.gov. For a list of participating and non-participating agencies see here. Agencies that do submit to Regulations.gov have varying levels of accuracy and completeness.
Regulations and public comments can be downloaded in bulk here.
The tables show occurrences of "Martin Marietta Materials" in public comments on proposed federal regulations.
Mentions in Document Text
- Mentions
- Agency
- Docket
- Date
View all mentions data for Martin Marietta Materials
- Toggle 14 EPA NSPS Review - Subpart OOO - Nonmetallic Mineral Processing Plants 2007
- Toggle 4 EPA Air Quality Designations and Classifications for the 2008 Ozone Standards 2008
- Toggle 4 EPA Definition of "Waters of the United States" Under the Clean Water Act 2011
- Toggle 4 EPA NPDES - Reissuance of the Vessel General Permit for Discharges Incidental to the Normal Operation of Vessels (VGP) 2011
- Toggle 3 EPA Oil Pollution Prevention; Spill Prevention, Control, and Countermeasure Rule Requirements - Amendments 2008
- Toggle 3 EPA State Implementation Plans: Response to Petition for Rulemaking; Findings of Substantial Inadequacy; and SIP Calls to Amend Provisions Applying to Excess Emissions During Periods of Startup, Shutdown, and Malfunction 2012
- Toggle 3 EPA Approval and Promulgation of Implementation Plans; State of Montana; State Implementation Plan and Regional Haze Federal Implementation Plan 2011
- Toggle 3 EPA Indiana Particulate Matter Emission Limits 2007
- Toggle 2 EPA Review of the National Ambient Air Quality Standards for Particulate Matter 2007
- Toggle 2 FWS Designation of Critical Habitat forNeosho mucket and rabbitsfoot mussels 2013


text: I had a studio room, with small kitchen and bathroom. Kitchen was ok, there was everything, also a tea and coffee set for the morning! Room was clean and quiet, the guy at the reception very friendly. Location is great, just a few steps from Brussel Nord station. I will consider it again for the next stay in Brussels! Price... More


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Join or Sign In
Cake Decorating
Spaghetti and Meatballs
Christmas Birthday!
Zombie Head Cake
Muddy Pig Cake
Princess Cake
Not From Scratch cake
Shoe Box Cake
Baby Shower Cake
Vanilla and Chocolate ...
Human cupcakes!
Early Birthday
Whimsical Anniversary ...
Spring Birthday
Sweet 16!
Winter Birthday!
Easter Basket Birthday
Yummy Chocolate Cake!
Summer Cake
Pink Princess Cake
Butterfly Cake
Take Craftsy with you!
Craftsy Apps for iOS and Android. Read more »


text:
2 Chance Apartments, Atlanta, GA
Last Chance Thrift Store
201 N Norcross Tucker Rd, Norcross, GA 30071
13.6 Miles
"This store had moved to Chamblee Plaza on Peachtree Blvd.">
Aquastar Cleaning Services
1360 Powers Ferry Rd, Marietta, GA 30067
9.6 Miles
"Excellent house cleaning service. Minimal cost, professional workers, completed job quickly ...">
Uptown Square Apartments
508 Main St, Atlanta, GA 30324
1.9 Miles
"The employees of the leasing office are incompetent, apathetic and rude. They never answer t...">
Alexan Metrowest Apartments
1040 Huff Rd, Atlanta, GA 30318
2.2 Miles
"The property itself is beautiful but the people hanging out outside of the complex are not. ...">
Archstone Cheshire Bridge - Apartments & Apartment Rentals
2430 Cheshire Bridge Rd, Atlanta, GA 30324
2.5 Miles
"I have had extremly noisy neighbors that myself and many other tenants have complained about...">
Rosalynn Apartments
2198 Dresden Dr, Atlanta, GA 30341
6.9 Miles
"The surrounding neighborhood as well as this facility are both filled with drug activity. T...">
Park At Lakewood Apartments
1991 Delowe Dr Sw, Atlanta, GA 30311
7.9 Miles
"these apartments are not good apartments to stay in they don't fix any thing the pool hasn't...">
The Town Homes At Pleasant Hill
2500 Pleasant Hill Rd, Atlanta, GA 30349
14.5 Miles
"i live in the townhomes! i went to the grocery store across the street for 1 item, to come h...">
Tapestry House
2725 Holcomb Bridge Rd, Alpharetta, GA 30022
14.8 Miles
"This is the worst place ever. I have been looking for a home for my parents for the past 2 m...">
Watkins, Lourie, Roll & Chance, PC
3348 Peachtree Rd Ne Suite 1050 Ste 1050, Atlanta, GA 30326
3.6 Miles
Wesley Townsend Apartments
200 Colonial Homes Dr, Atlanta, GA 30309
1.2 Miles
Tuscany At Lindbergh Apartments
600 Garson Dr Ne, Atlanta, GA 30324
1.7 Miles
Savannah Midtown Apartments
215 North Ave Ne, Atlanta, GA 30308
1.9 Miles
Apex West Midtown Apartments
1133 Huff Rd Nw, Atlanta, GA 30318
2.4 Miles
Westminster At Buckhead Apartments
2900 Pharr Ct S Nw, Atlanta, GA 30305
2.6 Miles


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The three-and-a-half-mile stretch of rusty train track in central Queens is being reconceived as the "QueensWay," a would-be linear park for walkers and bicyclists in an area desperate for more parkland and, with the potential for art installations,... Read more
Architectural renderings allow us to peer into the future of our beloved city without a crystal ball. New York City has some big changes coming, and here are 17 future attractions that will transform the Big Apple as we know it.
There are plenty of large-scale projects in the pipeline that on paper may seem far-fetched, but which could ultimately transform and improve the Big Apple.
The City of West Point's Chattahoochee River greenway plan got a 124-acre boost today.
The Proctor Creek watershed separates Atlanta's BeltLine park system from the iconic Chattahoochee River. But although residents in this area are close to both waterways, they lack easy access to either one. In fact, they're short on parks in general.
The Triple Creek Greenway Corridor is currently in its beginning stages. When completed, it will add 14 miles of interconnected open space and trails between the existing Sand Creek Regional Greenway and the thousands of acres of public land surrounding... Read more
At just under a mile, the Dinky Line Trail runs between Orlando's downtown urban core and Loch Haven Park—home to art museums, performing arts theatres, and a science center.
In late 2008, TPL worked with the Triangle Land Conservancy to purchase Riverwalk, permanently protected a 329-acre property at the juncture of the Neuse River and Marks Creek.
In early 2011, The Trust for Public Land conserved a large, forested wetlands property along a half-mile of Ayers Creek, a popular canoeing and kayaking destination.
The Reseda River Loop is a multi-phase effort to create safe, usable open spaces for local residents to walk, jog, bike and explore nature close to home.


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Search International Volunteer Opportunities
113 total results found
Browse results by category:
Browse results by region:
Results 11 to 20 of 113 found
Fight to Conserve and Protect Costa Rican Sea Turtles
Our sea turtle conservation volunteers provide a constant presence on two beaches on our properties with morning and night patrols where they monitor the nesting activity, predation rates and increase hatchling success of these incredible species by
One Day Volunteering in Kenya
Give A Day Global volunteers can spend the day with Zawadisha - an innovative microlending organization that arms women with access to capital and the life-saving tools they need to lift themselves out of poverty. Volunteers can help members with
Costa Rica Volunteer Program
The Global Volunteer Network currently has opportunities to work in a range of programs in Costa Rica. Volunteers can assist with our turtle conservation program, take care of children at one of our orphanages, teach at our schools, help with our
Volunteer Nepal: Immerse Yourself in a Nepalese Community
Volunteer Nepal, an affiliate of Nepal Orphans Home, strives to serve the poor and enhance the relationship between the Nepalese people and volunteers who seek a heartfelt, life-changing experience. In each of the last three years more than a hundred
Volunteer in Ecuador
The Global Volunteer Network offers volunteer opportunities through our partner organization in Ecuador. You can become involved in a variety of conservation and community projects in Ecuador, including the Galapagos Islands and the Amazon. You have
Volunteer in Kenya with a Women Group Initiative
Marketing, agriculture, awareness, capacity building, renovation & construction, working together with local schools
Thailand Volunteer Program
Be a part of community-based, Thai-led projects in education, childcare, health, construction, and elephant care. Volunteer in the most stunning of locations from the Hill Tribes of the jungles and mountains in the north to the beautiful island of
Vietnam Children's Volunteer Program
*We are unable to place volunteers in their own country* GVN currently has opportunities for international volunteers to work in the Children's Program with orphans, and children with disabilities, or teaching. You will be working alongside the
Global Health Volunteer - Project Alajuelita, Costa Rica
The FIMRC clinic in San Felipe, Alajuelita was established in January of 2005 and is just a short walk to the underserved communities of Jasmin ("Jasmine") and Los Pinos ("The Pines"). The centrally located clinic serves as a FIMRC base within the
Global Health Volunteer - Project Bumwalukani, Uganda
Standing at the foot of Mount Elgon, 150 miles east of the bustling capital city of Kampala, stands FIMRC's clinic at Project Bumwalukani. The community is comprised of approximately 10,000 to 15,000 inhabitants with an average annual income of $200.
Results 11 to 20 of 113 found


text:
Blast at Vasai industrial unit kills 3
Top Stories
- IPL spot-fixing: Delhi court drops charges against S Sreesanth and two other cricketers
- Nitish Kumar gets back at Modi, accuses him for 'not honouring promises'
- Major decisions on revision of role of women in armed forces on the anvil: Manohar Parrikar
- Congress, TMC and BJD to seek total withdrawal of NDA's land bill
- Never sought travel documents for Lalit Modi, says Sushma Swaraj
Owner, manager of unit making aluminium profiles booked for culpable homicide not amounting to murder.
Three workers were killed and two severely injured in an explosion at an industrial unit in Vasai on Tuesday.
The incident occurred at Nakoda Extrusion, an aluminium profiles manufacturing unit at Sheetal Swapna Industrial Estate in Bhoidapada, Vasai (East) at around 7.45 am.
The five labourers were waiting for the supervisor to open the unit at 8 am.
Waliv Police said to make profiles, aluminium had to be heated to 200 degrees and boilers kept running for three nights a week. This, they said, caused the explosion explosion. "Prima facie it appears pressure in the boilers increased, causing the explosion," said Deepak Devraj, DSP, Thane (Rural).
Sources, however, said there was a strong LPG odour and the blast could have occurred due to use of illegal cylinders.
Police said the explosion blew the labourers away. While Sudhir Yadav (33) and Nirmal (34) were declared dead on arrival at Platinum Hospital in Vasai, Kanhaiya (30) died during treatment. Praful's legs were fractured, while Kailash suffered severe eye injuries.
Kailash said, "It was a deafening explosion. Within seconds, everything was blank before me." Devraj said the unit did not have fire-fighting equipment.
Police have registered a case under IPC sections 304 (culpable homicide not amounting to murder), 285 (negligent conduct with respect to fire or combustible matter) and 338 (causing grievous hurt) against unit owner Jeevan Jain and manager Jeetubhai Chanchad.
"No arrests have been made yet," said Devraj. "We are investigating all possible angles," said a senior officer.
Explosion theories
Police said pressure in boilers used to heat aluminium to 200 degrees increased, causing the explosion
Sources, however, said there was a strong LPG odour and the blast could have occurred due to use of illegal cylinders


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Visualising a year of GoteoBy: Goteo 31 | 12 | 2012 Goteo, GoteoEuskadi
Much has happened since Goteo opened its doors at the beginning of November 2011. Mostly positive things, some unexpected things, others to learn from and make improvements – we've travelled a long way along with many people and projects, and it's a journey that's worth looking back at here as we enter this new year 2013.
We had this in mind when Franc Camps-Ferrer, data visualisation specialist and artist living between Brooklyn and Barcelona appeared and proposed converting various questions and numbers into dynamic graphics.
While we continue to work on the best way in which the platform, besides housing projects based on the commons, can make open data freely available so that anyone can use and analyse it (thereby providing needed collective knowledge about this new area which is crowdfunding), Franc Camps has taken some of the detailed statistics of campaigns, users and contributions and has captured the the first year of Goteo in this fabulous series of infogaphics and conclusions.
In Franc's work on Goteo it is possible to clearly visualise other important questions, such as, for example how different successful campaigns with a similar pattern of a good start in the first few days of the campaign and the key factor of regular updates of information developed, or the recurrence and average of contributions, which are higher in general than project campaigns on other platforms which do not offer a collective return (something that we had already confirmed during the research carried out by Platoniq before the development of Goteo).
This video which accompanies the infographics is an example of the detail and understanding that this type of visualisation permits, where in this case it is possible to appreciate the geographical behaviour of the cofunders between November 2011 and November 2012.
Developments in 2012
Time flies and we are continuing to grow so we thought we'd take advantage of the new year to comment on some of the milestones in the still short history of Goteo.
2012 has been the year in which Goteo Euskadi opened as the first autonomous node of the platform (more nodes will follow shortly, such as Andalusia, strengthening the decentralised model we believe in). Throughout the year we've given lots of presentations and talks (like this one at TEDxMadrid), and facilitated more than 15 workshops on collective and open financing n cities worldwide - Madrid, Bilbao, Zaragoza, Tenerife, Cáceres, Berlin, Rome, Dublin, Nantes, Caracas, Maracaibo etc.
Thanks to the invaluable help of some fantastic volunteers, the platform has been translated into Catalan, English, Basque and French (and a great book has also been created in French). The first version of the source code has been released on Github under an AGPL license (and has been used by at least a pair of other platforms that we are aware of). We've developed an API with which it's possible to process tax-deduction certificates for donations, for those cofunders who renounce a reward in return for their contribution, which is available from the user control panel. It's also been the year in which we have received the Premio Focus de Conocimiento Libre prize for a successful organisation and been chosen as number one among crowdfunding platforms for social change on the P2P Foundation blog.
In the year that has ended we have also started collaborating with Pau Llop on the Colaboratorio de eldiario.es blog, writing about the collaborative economy. As well as being pretty active on our own Goteo blog, , we have written for the Berliner Gazette and the Mosaic magazine of the UOC, as well as being interviewed by Felix Stalder for Shareable and been featured in various media & events. We've also published a summer and recent winter catalogue (with campaigns that we invite you to support).
More data!
Complementing the numbers and visualisations featured in this post, the platform now has 17,761 registered users (8, 917 active cofunders, of whom more than 1,000 have cofunded more than one campaign) and about 10,400 daily visits, totalling 2,500,000 visits during 2012, and we have 10,000 followers in different social networks. Around 150 open projects have been published to date, collecting, in total, more than 430,000 Euros, with an average of almost 40 Euros per cofunder and a campaign success rate of over 60%. To that must be added 765 offers of different types of collaboration. With regard to collective returns, the most-used license by projects has been the Creative Commons ) Attribution-NonCommercial-ShareAlike 3.0 Unported.
All this (and much more for which there isn't room in this post) wouldn't have been possible without all of those people who have contributed their financial help, time, knowledge and other resources to the projects campaigning on the platform. In name of the project promoters and the Goteo team we just want to give a big
and our hope that 2013 will be a great year for everybody wherever the commons prevail.
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Pink Out for Breast Cancer Awareness
On Friday, October 23rd, CMHS will have a PINK OUT game for Breast Cancer Awareness at our Varsity football game vs. Bronson. Football players, cheerleaders, band members, staff and students will be wearing pink, and we encourage all our fans to do so as well. Student Government will be providing pink carnations for any survivor or in honor of a family member/ friend who has been affected by Breast Cancer. If you would like to be recognized at the game, please arrive a little before 7:00 PM at the CMHS football field to receive your pink carnation on the track. We will be starting the ceremony at 7:00 PM. Please contact SGA Advisor, Mrs. Perez at firstname.lastname@example.com if you would like to participate. Also, please include the person's name you will be standing for, and a little information about the person's battle or your own when contacting us.
Sophomore's order you're Class of 2018 t-shirts. See Ms. Christina Smith by October 2, money can be turned in to Ms. Smith when they are delivered. Shirts are $11.00.
Sophomore's interested in participating in Powder Puff, please see Ms. Smith.
Homecoming meeting afterschool on Wednesday, September 30th.
SGA club shirts are available to order. See Emily Hallman with your $10 by Sept. 25.
In an effort to raise money for the media center, Mr. Dettlof has challenged all 1st. period classes to collected box tops. The 1st period class with the most box tops will be treated to breakfast. The deadline is Oct. 23rd. Please keep all the box tops in your classes until that date. More information will follow. Thank you for your help and good luck all 1st period classes.
September 7 - October 9, 2015-Senior News
Yearbooks go on sale. Reserve your copy now for the discounted price of $50. Copies are limited. Make checks payable to Chiefland High School. No cash of checks will be accepted without a completed order form.
September 28 Lady Indians v. Ft. White @ 4:00/5:00/6:00 – Away - MS/JV/Varsity
September 29 Lady Indians v. Bell @ 4:00/5:00/6:00 – Home - MS/JV/Varsity
October 1 Lady Indians v. Trenton @ 4:00/5:00/6:00 – Away – MS/JV/Varsity
October 1 JV Indians v. Bronson @ 6:30 Home
October 2 V Indians v. Trenton (away) 7:30
Please join Student Government in participating this year in the Blue Shirt Day for Bullying Prevention by wearing blue on Monday October 5,2015.
October. 6 HI-Q Cedar Key @ Dixie Co.
Williston @ Bell
Chiefland @ Bronson
Trenton - Open
October 9 CHIEFLAND FFA ALUMNI, MEMBERSHIP ROUND-UP, 5:30-7:30 p.m. See page 3 for more information
Oct. 13 HI-Q Dixie @ Trenton
Bell @ Bronson
Cedar Key @ Chiefland
Williston - Open
Oct. 20 HI-Q Bell @ Chiefland
Bronson @ Cedar Key
Williston @ Trenton
Dixie County – Open
October 21 First Beta Meeting on October 21st, 7th period.
Annual Dues of 25.00 dollars are due no later than the 21st of October. No exceptions.
October 23 CMHS will have a PINK OUT game for Breast Cancer Awareness
October 24 2015 LCSF Beast Feast 6:00 pm (gate opens at 5:30), Etheridge Cracker House, 2351 NE 140th Ave, Williston, FL $20 Donation is Tax Deductible
Power Puff Football game will be Thursday night, October 29th at 7pm.The rules are attached and are the same from previous years. The students must turn in a parental permission form, current physical, and their $2.00 to be eligible to play. The deadline for these documents will be October 20th--without exception. I will need your roster
and money by Oct 21st. This will give me the needed funds to stock the concession.
Homecoming is November 2-6
Student of the Month
Luke Reidy
Middle School Student of the Month
August Middle School Student of the Month. Luke always displays exceptional behavior in and out of the classroom. His peers respect him and teachers love having him in class. He excels academically in the classroom.
Chase Malloy
High School Student of the Month
Chase is an excellent student who sets an example for others to follow. Chase is focused on his studies and always strives to do his best. When he makes mistakes, he's always looking to figure them out and learn from them. Chase is also a dedicated athlete. He's a great teammate trying to do his personal best and always works to support his teammates.
FBLA Officers for 2015-2016:
President, Sierra Caruthers
Vice-President-Bing Ling Dong
Secretary - Elena Richardson
Treasurer - Christian Reyes
Parliamentarian - Travis Wiliams
Reporter - Kimberly Rudin
FBLA Dues - $25 this includes the
FBLA shirt. Mrs. Mack must have all dues paid by October 12th.
There will be a district FBLA meeting in Ocala on October 23rd. Let Mrs. Mack know if you are going to attend.
FBLA Officers need to meet in Mrs. Mack's room tomorrow during second period.
FCA Senators 2015-2016
Faith Ann McClellan
Katelynn Tremblay
Brooke Matthews
Cheyanne Walker
Felicity Langford
Tori Schiapucci
Elena Richardson
Jessica Ivy
See You at the Pole is tomorrow morning at 7:30 a.m. at the middle school flag pole.
FCA dues - $5 if you want a t-shirt $15.
All FCA senators need to meet in Mrs. Mack's room tomorrow during 2nd period.
Senior 2016 Yearbook Due Dates
June 8, 2015 (Senior Portraits Taken)
You must be in a Senior Homeroom by the first day of school to be in the senior portrait section of the yearbook.
September 4, 2015
Final payments and all senior ad material (pictures and text) are due to Mrs. Flemming. NO EXCEPTIONS! Please note that if pictures are not submitted on CD (save all pictures as JPEG images by typing .jpg after the file name: i.e. johnjoe.jpg) there will be a $10 service charge.
September 7 - October 9, 2015
Yearbooks go on sale. Reserve your copy now for the discounted price of $5-. Copies are limited. Make checks payable to Chiefland High School. No cash of checks will be accepted without a completed order form.
*September 2015 (1st & 2nd period)* TBA
This is your final chance to be photographed for the formal section of the yearbook! Senior retakes/absentee photos will be taken first and second period in the media center. Make arrangements with your first period teacher ahead of time, get any assignments you may miss, and check in that morning before the tardy bell.
September 18, 2015
This is the deadline to turn in friends and couples pictures to Mrs. Flemming ($5 each, 2 pictures per person limit). Remember to write the first name of all the people pictured in your photos (in order from left to right) on the back of the picture. Turn your pictures and money in early to Mrs. Flemming to reserve your space.
October 2, 2015
This is the last day senior baby pictures will be accepted. There is no charge, but please be sure to write your name on the back of your picture. Remember, we cannot guarantee the plant will return your pictures, so submit copies with possible. These pictures will also be used for baccalaureate slide show!!
November 2 – December 4, 2015
This is your last chance to reserve your copy of the yearbook. The base price, however, will increase to $60.
February 2016
Take cap and gown pictures. Personality and buddy pictures may also be available.
May 2016
A class photo will be taken before graduation ceremony as well as individual photos as you receive your diplomas. Order forms will be available at graduation practice.
Remember, early submissions ensure your space. Missing deadlines guarantees your exclusion. See Mrs. Flemming if you have any questions.
Updated: 8/19/2015


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Transportation sectors are today faced with grand societal challenges of accommodating an unprecedented traffic increase, while improving travel safety, comfort and convenience, fuel efficiency, environmental benefit, and stakeholders business. Commonalities are emerging in the way aerospace and automotive sectors are responding to these grand challenges.
Click a term to refine your current search.
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Vanilla Pancakes with Lemon-Vanilla Apples
2 cups self-rising flour
2 eggs - beaten
3 tablespoons butter – melted
2 cups milk
3 tablespoons sugar
1 tablespoon vanilla
Sour cream
For the Lemon-Vanilla Apples:
2 large apples – peeled and sliced
3 tablespoons sugar
1 tablespoon vanilla
Zest of one lemon
Juice of half (large) lemon
2 tablespoons butter
Place the flour and sugar in a large bowl. Combine the beaten eggs with the milk and vanilla; add the cooled butter to the milk and stir.
Make a well in the center of the flour and add the milk combination. The batter will be lumpy. If the batter is too thick add a little milk at a time to get a thinner consistency.
Let the batter rest for a minute or two while heating the griddle. Place a pat of butter on a heated cast iron pan or griddle. Do not let the pan get too hot or the butter will burn! Flip the pancakes when little holes start to form.
For the Lemon-Vanilla Apples:
In a small bowl zest and juice the lemon and add the sugar and apples and toss. Heat a small pan and add the butter. Add the apple mixture and heat. Briskly stir the sour cream.
Top the pancakes with the sour cream, lemon- vanilla apples and syrup.
Friday, September 20, 2013 - 12:45pm