text:
Rascal Flatts, Miranda Lambert & More to Perform on FOX's ACA's, 12/10
Rascal Flatts, Kip Moore and Jake Owen are set to perform at the AMERICAN COUNTRY AWARDS (ACA) airing live from Mandalay Bay in Las Vegas Monday, Dec. 10 (8:00-10:00 PM ET live/PT tape-delayed) on FOX. Owen, Moore and Rascal Flatts will join previously announced performers Jason Aldean, Lady Antebellum, Dierks Bentley, Luke Bryan and Little Big Town.
The star-studded special also will feature appearances by Miranda Lambert, Natasha Bedingfield, Ron White and champion cowboy Trevor Brazile. Previously announced participants include Scotty McCreery, Lauren Alaina, Casey James, LeAnn Rimes, Lee Brice, Jana Kramer, Dustin Lynch and Chris Young. Additional performers and presenters to be announced soon.
The two-hour live music spectacular offers country music fans the opportunity to vote for their favorite artists not only in traditional categories, but also in a previously unrecognized area – touring – encompassing the entire spectrum of country music.
Voting for Artist of the Year continues until Friday, Dec. 7 at www.theacas.com.
In addition to the previously announced nominations, the nominees and Top Five fan vote recipients for the inaugural Song of the Year category are:
Song of the Year:
"A Woman Like You," performed by Lee Brice (Phil Barton, Johnny Bulford, Jon Stone)
"Fly Over States," performed by Jason Aldean (Michael Dulaney, Neil Thrasher)
"Red Solo Cup," performed by Toby Keith (Brett Beavers, Jim Beavers, Brad Warren, Brett Warren)
"Springsteen," performed by Eric Church (Eric Church, Jeff Hyde, Ryan Tyndell)
"Tattoos On This Town," performed by Jason Aldean (Michael Dulaney, Wendell Mobley, Neil Thrasher)
Rascal Flatts is the best-selling country vocal group of the past decade. The No. 1 debut of their new release, "Changed," earned them the distinction of being one of only four acts to have seven consecutive studio albums debut in the top spot on the Billboard Country Albums chart during the Soundscan era. Since their musical debut in 2000, the band has sold more than 21 million albums, 25 million digital downloads and delivered 14 No. 1 singles to the top of the charts. Rascal Flatts is the most awarded country music group of the past decade, earning more than 40 trophies from the ACAs, the Academy of Country Music Awards (ACMs), the American Music Awards (AMAs), the Country Music Awards (CMAs), the People's Choice Awards and more. They are currently nominated for four ACAs.
Kip Moore is a country singer/songwriter from Tifton, GA. He released his debut album, "Up All Night" (produced by Brett James), on April 24, 2012 via MCA Nashville. "Up All Night" debuted at No. 3 on the Billboard Country Album chart and No. 5 on the Billboard Top 200. It is the best-selling album for a debut artist in 2012. Moore's single, "Somethin' 'Bout a Truck," spent two week's at No. 1 on the Billboard Country Songs Chart and the Mediabase/Country Aircheck chart and has been certified platinum. Moore is nominated for three ACA's, including Artist of the Year: New Artist, Single of the Year: New Artist and Music Video of the Year: New Artist. He is currently on the road touring with Eric Church on the Blood, Sweat & Beers tour. His current single, "Beer Money," is No. 7 on the Billboard Country Songs chart.
Jake Owen's chart-topping 2011 album, Barefoot Blue Jean Night, has launched back-to-back, multi-week No. 1 hits with the platinum-selling title track and the gold-certified "Alone with You." Nominated for four ACAs, Owen's current single from the album, "The One That Got Away," is already a Top 5 hit and climbing at country radio. After playing to packed stadiums this summer on Kenny Chesney and Tim McGRaw's blockbuster Brothers of the Sun tour, Owen launched his first headlining tour, CMT On Tour Jake Owen: The Summer Never Ends 2012. He is making CMT history by having the most consecutive sold-out shows since the tour's inception 11 years ago. His new "Endless Summer" EP made an impressive debut at No. 2 on Billboard's Top Country Albums chart. Owen first captured the national spotlight with hits "Startin' with Me," "Don't Think I Can't Love You" and "Eight Second Ride." His revival of "Life in a Northern Town," with Sugarland and Little Big Town in 2008, earned him Grammy and CMA Award nominations. Owen was named 2009's Top New Male Vocalist by the Academy of Country Music, and earlier this year, Entertainment Weekly's music issue ranked him among The 30 Greatest Artists Right Now.
AMERICAN COUNTRY AWARDS is executive-produced by Bob Bain (TEEN CHOICE 2012, "Kids' Choice Awards"). Fletcher Foster, Paul Flattery and Tisha Fein serve as producers. Greg Sills is supervising producer. Michael Dempsey will direct the live special.
About Author
- SUNDAY NIGHT FOOTBALL to Feature Broncos-Lions Game This Weekend
- VH1 Renews BASKETBALL WIVES: LA for Fifth Season
- NBC to Air First Primetime Heavyweight Title Fight in 30 Years This Weekend
- PHOTO: PETER PAN LIVE's Allison Williams Shares Stunning Wedding Shot
- VIDEO: Sneak Peek - 'Chainsaw' Episode of FOX's SCREAM QUEENS
- Jimmy Carter to Guest on Season Premiere of OWN's SUPERSOUL SUNDAY, 9/27
- Photo Flash: Seth Meyers, Alec Baldwin & More Guest on Last Night's BEST TIME EVER
- VIDEO: Sandra Lee Talks Being Cancer Free & Journey to Recovery on GMA
- ABC's THE MUPPETS Opens as Tuesday's No. 1 New Series in Adults 18-49
- Host Jamie Kaler Returns for AHC's Original Series AMERICA: FACTS VS. FICTION, 10/6
- FX Gives Second Season Order to SEX&DRUGS&ROCK&ROLL
- FROZEN's 'Let It Go' by Idina Menzel is Certified 8X's Platinum
- THE INTERN's Andrew Rannells Reveals He & Anne Hathaway Bonded Over Broadway Musicals
- VIDEO: Sneak Peek - Comedy Central's TOSH.0 LADIES NIGHT: A FEMALE EMPOWERMENT EPISODE
- E! to Premiere Season Finale of TOTAL DIVAS, 9//29
- SAND DOLLARS Coming to Theaters, VOD/DVD This November
- NBC Sports Coverage of Notre Dame Football Averages 4 Million Viewers
- Electus Unveils Highlights of MIPCOM 2015 Programming Slate
- HBO Latino to Air Award Winning Music Film THE POET OF HAVANA, 10/23
- CBS's LIMITLESS Premieres as Tuesday's Most-Watched New Series


text:
DAY6 explain why they don't perform on music shows + talk about iKON
If you're a DAY6 fan, this radio interview is a must-watch! It's the band's very first radio show appearance after all!On the most recent broadcast of 'Jung Joon Young's ShimShimTapa', all the members of DAY6 as well as Rhythm Power were guests. The members talked about their favorite songs and artists, their trainee days, and sang their songs live!More specifically, DJ Jung Joon Young asked DAY6 why they weren't currently performing on
JJY Band performs on 'Sketchbook' + considers Jung Joon Young their father figure?
JJY Band appeared on KBS 2TV's 'Yoo Hee Yeol's Sketchbook' on May 29 to perform their exciting new song "OMG"!In their interview portion, they introduced themselves as drummer Lee Hyun Kyu, bassist Jung Suk Won, guitarist Cho Dae Min, and vocalist Jung Joon Young.Jung Joon Young stated, "Our band debuted on 'Sketchbook'. Originally, we participated in 'Superstar K' as a band too, but somehow, I ended up going through the rounds alone."Yoo Hee Ye
Jung Joon Young promises JJY Band will get piercings if they win #1 on a music program?
Like the lovably wacky person he is, Jung Joong Young brought laughs with his unusual promise to fulfill if he and his band are able to take #1 on a music program! Jung Joon Young Band (JJY Band) held their showcase at the Yes24 Move Hall on the 27th. Here, main vocalist Jung Joon Young said, "To be honest, I haven't been able to do a lot of performances due to my variety show appearances. Besides going on tour in China, I didn't have any other
Jung Joon Young wakes up after a wild night of partying in JJY Band's 'OMG' MV
Jung Joon Young Band are here to start a ruckus with their song fittingly titled, "OMG"! The song has been produced by Bon Jovi's producer, Brian Howes, and co-composed by Jung Joon Young and 'Vanilla Utility's Lee Seung Joo. it doesn't disappoint at all along with the rest of their album, "Deviation", which Jung Joong Young and his band members all directly participated in making. The vocalist and his new band members,
[Exclusive] Jung Joon Young Band (JJY Band) are ready to rock in new exclusive teaser images!
Singer Jung Joon Young is setting out to rock the music world with some fresh new sounds, and he won't be alone this time, for he has recruited talented musicians to form the 4-member band, 'Jung Joon Young Band'! We've seen a peek at what JJY Band has to offer through some teasers, and fans have been showing their interest and support in every step the band has taken so far. So to thank our allkpop readers, CJ E&M is
JJY Band promote new album with impromptu busking at COEX Mall
JJY Band halted all foot traffic at COEX Mall with an extemporaneous 'street performance' to promote their album, 'Deviation'. At the busking event, the band performed their new album's title song "OMG" along with five new tracks that will also be on the album, causing the crowd to go wild. Main vocalist Jung Joon Young also didn't forget to introduce the new album to the audience. He remarked good-humoredly, "It's not that this song isn't popula
Jung Joon Young strikes rock star pose with beautiful models on 'OMG' MV set
Jung Joon Young Band (JJY Band) is creating buzz with a recently released photo of the MV set to their title song MV, "OMG." With the release just around the corner, JJY Band unveiled an eye-catching photo of the "OMG" music video set on the group's official Facebook page! In the photo, Jung Joon Young is surrounded by many a pouty-lipped beauties, with him right in the center. The location for the video shoot was at an unnamed studio in Gyeonggi
Jung Joon Young tries to save the day in JJY Band's 2nd 'OMG' MV teaser!
Jung Joon Young Band's 2nd MV teaser is here, giving us a very different vibe than the first!The new MV trailer reveals the collaboration between Jung Joon Young Band and virtual musician WIMP members Mekky and Mebby!In the trailer, Mekky and Mebby are tied up with rope and tape onto chairs, and Jung Joon Young comes in to save them with a giant pair of scissors! And he's so close to helping them escape until a sexy lady comes in, and ties h
Jung Joon Young to make his comeback as part of 4-member band 'Jung Joon Young Band'
Singer Jung Joon Young will be making his music comeback not as a soloist, but as a 4-member band, simply but clearly named 'Jung Joon Young Band', on May 27!His company CJ E&M announced the news on May 15, clarifying that this isn't a temporary special event, but that the band will continue releasing albums.Jung Joon Young uploaded the above photo showing himself and revealing his three other members looking cool inside a vehicle. His band i
Jung Joon Young parodies Lee Hyori in the teaser for his upcoming reality show 'Jung Joon Young's BE STUPID'
Jung Joon Young parodied Lee Hyori in the teaser for his upcoming reality show, 'Jung Joon Young's BE STUPID.'Set to air early September, the show will follow Jung Joon Young as he gets his album ready for his official debut.The teaser shows Jung Joon Young chatting with producer Lee Jae Won. The artist asks, "Should I get married? Hyori noona said she's getting married and [her reality show] became daebak."The producer disregarded him, saying, "

subset: commoncrawl


text:
Serial announces work on two new seasons
The second season launches this fall and the third airs next spring.
Current.org (http://current.org/category/quick-takes/page/8/)
The second season launches this fall and the third airs next spring.
The station is holding three public meetings and two board meetings to decide the station's fate.
The study was reported during an April episode on changing minds.
Leadership changed May 1 at PBS SoCal, PBS's primary station in the Los Angeles market.
The lawsuit was filed in October as part of the investigative center's research on a story about a spate of high-dollar embezzlements at the school.
A public radio producer lays out an argument for how unfettered advertising on podcasts compromises public media's mission.
Writing for The Seattle Times, a communications professor and former reporter and producer for the city's KCTS-TV argues that the station should sell its broadcast spectrum and cede local public TV service to Tacoma's KBTC. "Our region deserves better," writes Barry Mitzman, now a teacher of strategic communications at Seattle University. Stations duplicating PBS programming are "inefficient," he argues. "Regional consolidation might save money that could be invested in programs," Mitzman continues. "Many states, including Oregon and Idaho, have unified public-TV systems that produce more original content — often much more — than KCTS does."
With KBTC airing much the same programming as KCTS, the Tacoma station could take over a KCTS transmitter.
The Public Media Platform is seeking stations to help test a new tool.
The joint resolution approves the blueprint for the $3.8 trillion 2016 federal budget.


text:
Oze Iwakura Resort Hotel
No prices found through our partners. Please contact the business directly or check some of our recommended alternatives.
Travelers also recommend:
TripAdvisor Reviews Oze Iwakura Resort Hotel Katashina-mura
Travel Blogs from Katashina-mura
Into the hills
... was to go straight from the Airport up to the mountains however they needed to go via Asakusa station in the suburbs of Tokyo to connect. We worked around them by staying one night in Asakusa to meet them at the station.
The fun part was working out what time they would make it to us but thanks to the wonders of modern wifi and worldwide communication, Alex got off the plane and let using know they would arrive at our station at ...
Nikko, Japan
... in Nikko it is most famous for the Toshugu Shrine. The shrine dates back to the 1600s and the architecture is incredible. To see all of the buildings required not only a lot of walking, but climbing A LOT of steps. It was a challenge for out-of-shape me, but happily I was able to keep up with kids.
After touring the temples for ...
See no Evil, Hear no Evil, Speak no Evil
... a battle. I'm not sure what it was about, but boy was it cool to watch. After it finished I skipped Futarasan Shrine and went directly to Taiyuinbyo Shrine, where I passed Rob on my way in. This shrine was smaller but still beautiful. I enjoyed my stroll around it. It has a really interesting moss covered sing wall built up behind it on the mountain side (my guess to prevent falling rocks). As I went to leave a small group of men (I'm guessing monks of ...
Nikko festivities
... I tentatively answered in Japanese to tell them I was British this was met with huge grins and wide eyed acknowledgement as I'd managed a sentence in Japanese! My gloating didn't last long as they fired more questions at me and I could only look on blankly, we managed to communicate with a few laughs and I was offered a blanket to sit on and to share some food before the main precession in the afternoon which was very impressive and apparently ...
Day 44: Nikko, Utsunomiya
... going on (we later asked a gentleman who said that it was to celebrate 400 years since the shrine was founded - by his family in fact, i.e. Tokugawa i.e. the old shogun i.e. major Japanese aristocracy!) - walked to the Ganman-ga-fuchi abyss: a lovely shaded walk alongside the river with waterfalls en route and around 50 Narabi-jizo ...


text:
Tote Bags by Martin Heinemann
Popular / New
shoes for a decade, not …3$18 – $24 Martin Heinemann
Dude3$18 – $24 Martin Heinemann
To add items to your wishlist, simply click the "Add to Wishlist" link from any product page.
Don't see Wishlist items you've previously added? Create an account or login now on all devices to sync your Wishlist.


text:
Dressing the Baby Bump: 37 Weeks, Maxed Out Maternity Style
Above: Asos Maxi (way old, though this version is a stunner!), J Crew Sandals, Jerome Dreyfuss Carlos bag, Super glasses
The refrain is the same, hot, nothing fits, swollen, and now heartburn from hell; I am maxed out mentally, physically, and closet-ally. Like satan himself is in my stomach pushing acid up with his pitchfork to torture me. More likely, my precious baby-to-be is leaning on my stomach at an awkward angle. Well, space is limited, afterall. I guess that is what I get for having had such an easy time of pregnancy up until this point.
I *think* I finally have some respite from my week long bout with heartburn, courtesy of an Rx from my doc. Keep your fingers crossed it continues to work. The one benefit, I have actually jump started my post baby, well back to normal, diet, since I am relegated to the land of yogurt, fruit, and thoroughly dull snacks that are unlikely to produce acid. How is this even legal when the CSA dumped 5.5 lbs of tomato, acid, goodness on me this week? I raise my fist to the sky and dare to ask: how much tomato sauce can one woman prep and freeze? I'm sure I'll be thankful for all the frozen goods in the weeks to come.
This dress is another non maternity fave, which you may remember from the days before I had 30 excess lbs of baby goodness protruding from my midsection, ok, ok, maybe a few padded the bottom as well (full post here, from last summer).
I also have to thank BeStyled, the new blow dry bar at The Street in Chestnut Hill for a lovely afternoon of pampering. They let me rest my weary feet, washed out my locks, and styled them to perfection, note results above. Theresa and all the staff there were the sweetest. If you have not tried a blow out my friends, what are you waiting for? It was just what the doctor ordered (heartburn RX aside) for this weary mama, TLC for the tresses, for the price of a manicure/pedicure.


text:
New User:
Forgot your password?
Stock Market & Financial Investment News
News For IMAX From The Last 14 Days
Sign up for a free trial
to see the rest of the stories you've been missing.
October 2, 2015
Fly Watch: 'The Martian' expected to win weekend box office
Fox's (FOX, FOXA) "The Martian," based on the best selling science fiction novel by Andy Weir and starring Matt Damon, is expected to win this weekend's box office with an opening of between $40M-$50M. Sony's (SNE) animated sequel "'Hotel Transylvania 2," which set a record last weekend for a September opening with a $48.5M debut, is estimated to gross in the range of $29M-$31.5M in its second week. Lions Gate's (LGF) drug cartel drama "Sicario," which opened two weeks ago in six theaters and expanded to 59 theaters last week, is expected to take in $8M-$10M in its first weekend expanding nationwide, now playing in about 2,500 theaters. Time Warner (TWX) subsidiary Warner Bros.' comedy "The Intern," starring Robert DeNiro and Anne Hathaway, is estimated to bring in $8.5M-$8.9M in its second weekend. Fox's "Maze Runner: The Scorch Trials" is expected to earn an estimated $7.8M in its third weekend of release. Also new in theaters is Sony subsidiary TriStar's "The Walk," starring Joseph Gordon-Levitt, which opened Wednesday exclusively on 448 IMAX (IMAX) and large-format screens, and is expected to earn $3M through the weekend.
September 30, 2015
IMAX China determines $4.00 per share offer price for 62M share offering
Subscribe for More Information
September 25, 2015
Fly Watch: 'Hotel Transylvania 2' expected to top weekend box office
Sony's (SNE) animated sequel "'Hotel Transylvania 2," which is opening in 3,600 theaters, is expected to win this weekend's box office with a domestic gross of $35M-$40M. The next bunch of films are all expecting similar grosses in the mid-to-high teens. Time Warner (TWX) subsidiary Warner Bros.' comedy "The Intern," starring Robert DeNiro and Anne Hathaway, is estimated to open in the $15M-$20M range in 3,305 theaters. Comcast (CMCSA, CMCSK) subsidiary Universal's "Everest," which opened last weekend on IMAX (IMAX), is expanding to over 3,000 theaters this weekend and is estimated to gross in the range of $15M-$17M. Fox's (FOX, FOXA) "Maze Runner: The Scorch Trials," which grossed $30.3M domestically for the weekend of September 20, is expected to earn an estimated $16M in its second weekend of release. Warner Bros.' Whitey Bulger biopic "Black Mass," which took in $23.4M in its domestic opening last weekend, is expected to gross $12.5M-$13M this weekend. Additionally, Lions Gate's (LGF) drug cartel drama "Sicario" is playing in about 50 theaters ahead of the film's wide release on October 2.
September 24, 2015
High option volume stocks
Subscribe for More Information
September 22, 2015
IMAX price range for China IPO a positive catalyst, says Piper Jaffray
Subscribe for More Information
IMAX China files to offer 62M shares in range of $3.85-$4.45 per share
Subscribe for More Information
IMAX announces expansion of revenue sharing agreement with SMI Holding Group
IMAX and SMI Holding Group Limited, a Chinese entertainment and media company that operates theatres under the name Stellar Cinemas, announced an expansion of the parties' revenue sharing arrangement with the addition of five new IMAX theatres in China. The theatres will be installed in new construction projects located in the cities of Chengdu, Ningbo, Zhongshan, Kunming and Wanzhou and will bring the exhibitor's total IMAX commitment to 16 theatres, of which nine are currently open.
IMAX signs agreement with Better Life for two new theatres in China
Subscribe for More Information
Sign up for a free trial
to see the rest of the stories you've been missing.
I agree to the theflyonthewall.com
disclaimer & terms of use


text:
Raising the Bar: Season 2, Episode 7
Fine and Dandy (20 Jul. 2009)
TV Episode | Drama
Ratings: 7.4/10 from 13 users
Reviews: write review
Moments after being acquitted on a weapons charge, one of Jerry's clients is re-arrested for parole violation for having the weapon in the first place.
Director:Jesse Bochco
Writers:Steven Bochco (created by), David Feige (creator), 1 more credit »


text:
|Publication number
|Publication type
|Application number
|Publication date
|May 15, 2007
|Filing date
|Sep 7, 2004
|Priority date
|Sep 7, 2004
|Fee status
|Publication number
|Atiye Bayman, George D. Papasouliotis, Yong Ling, Weijie Zhang, Vishal Gauri, Mayasari Lim
|Original Assignee
|Novellus Systems, Inc.
|Export Citation
|BiBTeX, EndNote, RefMan
|Patent Citations (106), Non-Patent Citations (41), Referenced by (17), Classifications (34), Legal Events (4)
|External Links: USPTO, USPTO Assignment, Espacenet
The present invention relates to methods of manufacturing semiconductor devices and, more specifically, to a method for filling structures with doped or undoped silica glass. It relates to a HDP CVD process used to deposit films (e.g., for IMD, ILD, or STI applications).
It is often necessary in semiconductor processing to fill a high aspect ratio gap with insulating material. As device dimensions shrink and thermal budgets are reduced, void-free filling of high aspect ratio (AR) spaces (AR>3:1) becomes increasingly difficult due to limitations of existing deposition processes. The deposition of doped or undoped silicon dioxide assisted by high density plasma (HDP) chemical vapor deposition (CVD), a directional (bottom-up) CVD process, is the method currently used for high aspect ratio gap-fill. The method deposits more material at the bottom of a high aspect ratio structure than on its sidewalls. However, there is still formation of overhang at the entry region of the gap to be filled, which results from sputtering and redeposition reactions. The formation of overhang cannot be totally eliminated because non-directional reactions of neutral species and sputtering and redeposition reactions are inherent to the physics and chemistry of the HDP CVD process. However, overhang formation can be minimized by process optimization thus extending the utility of the method.
Several methods have been developed to extend the gap-fill capability of HDP CVD processes (see, for example, U.S. Pat. Nos. 6,030,881, 6,335,261, 6,395,150 and 6,596,654). Previous and current approaches involve the minimization or removal of side-wall overhang by either the use of a surface reactive ambient gas (e.g., hydrogen), or the use of multi-step process schemes including an active etch using a F-based etchant, such as NF3. In many instances, the underlying structure is damaged by the chemical reaction between the gas phase species or simply by excessive sputter etch during the initial stages of the process. For example, in STI structures, a SiN liner is often deposited to enhance electrical isolation between various device elements and improve device performance. The liner can be eroded via several chemical or physical pathways, resulting in compromised device performance (usually demonstrated by higher leakage current).
A method is therefore necessary to preserve liner and structure integrity during process initiation and during transitions between process steps in the case of multi-step process schemes.
This invention accomplishes dielectric gap fill without liner erosion or further underlying structure attack by modulating the characteristics of the deposition process such that the deposition component of the process initially dominates the sputter component of the process. For example, reactive gasses are introduced in a gradient fashion into the HDP reactor and introduction of bias power onto the substrate is delayed and gradually increased, or reactor pressure is decreased. In the case of a multi-step etch enhanced gap fill process, the invention may involve gradually modulating deposition and etch components during transitions between process steps. By carefully controlling the transitions between process steps, including the introduction of reactive species into the HDP reactor and the application of source and bias power onto the substrate, structure erosion is prevented.
These and other features and advantages of the present invention are described below where reference to the drawings is made.
Reference will now be made in detail to specific embodiments of the invention. Examples of the specific embodiments are illustrated in the accompanying drawings. While the invention will be described in conjunction with these specific embodiments, it will be understood that it is not intended to limit the invention to such specific embodiments. On the contrary, it is intended to cover alternatives, modifications, and equivalents as may be included within the spirit and scope of the invention as defined by the appended claims. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. The present invention may be practiced without some or all of these specific details. In other instances, well known process operations have not been described in detail in order not to unnecessarily obscure the present invention.
This invention accomplishes dielectric gap fill without liner erosion or further underlying structure attack by modulating the characteristics of the deposition process such that the deposition component of the process initially dominates the sputter component of the process. For example, reactive gasses are introduced in a gradient fashion into the HDP reactor and introduction of bias power onto the substrate is delayed and gradually increased, or reactor pressure is decreased. In the case of a multi-step etch enhanced gap fill process, the invention may involve gradually modulating deposition and etch components during transitions between process steps. By carefully controlling the transitions between process steps, including the introduction of reactive species into the HDP reactor and the application of source and bias power onto the substrate, structure erosion is prevented.
Conventionally during HDP CVD gap fill process transitions, including process initiation, the composition of the reactive gas is in a transient state and device elements are exposed to the plasma. The method of the present invention provides gradual and/or delayed introduction of reactive gases (e.g., H2, O2, NF3) into the reactor and gradual and/or delayed application of bias power onto the substrate among other process transition modulation techniques.
H2 and O2 are both known to react with SiN at finite rates in the presence of a direct HDP plasma. In addition, the rate of removal of silicon oxide by a hydrogen plasma is essentially the same as the removal rate of SiN, and such reactive species can damage other semiconductor substrate/dielectric materials such as SiC and silicon. The rate of material removal varies linearly with bias power. Therefore minimizing the exposure of device elements to reactive plasma gases and controlling the sputter component of the HDP process reduces the possibility of substrate erosion.
The present invention is described primarily with reference to an embodiment in which a substrate has a silicon nitride gap liner. SiN is often used as a CMP stop. It should be understood, however, that the invention is applicable to other semiconductor substrate surface materials, such as those noted above.
Process Characteristics and Parameters
The present invention, while applicable to any filling of any gap requiring dielectric fill, is particularly applicable to gap fill of high aspect ratio (e.g., >3:1), narrow width gaps. For example, the gap may have an aspect ratio of about 7:1, or even 10:1 or greater, and a narrow width, for example about 600 Å, or even 400 Å or less.
The gap fill process may be a single step or, more often, a multi-step process. In a single step process, the gap is filled in a single deposition step. More commonly, however, particularly for gaps with aspect ratios greater than 3:1, a multi-step, etch enhanced process is used and the invention is primarily described herein with respect to such a multi-step, etch enhanced process. It should be understood, however, that the invention is also applicable to a single step process. In either in accordance with the present invention, the gap is filled with a dielectric deposited by a HDP CVD process. Generally, a high density plasma is any plasma having electron density of at least about 5�109 electrons per cubic centimeter.
A deposition process begins with an electrical subsystem applying electrical energy of appropriate power and frequency to one or more electrodes of a process chamber of the reactor. The power and frequency are chosen to generate a high density plasma in the chamber, given the process gas concentration, pressure, and other process parameters. Providing the substrate (e.g., wafer) to the reactor may involve clamping the substrate to a pedestal or other support in the chamber. For this purpose, an electrostatic or mechanical chuck may be employed.
After the wafer is appropriately situated in the chamber, a gap on the substrate is filled or partially filled by HDP CVD deposition of dielectric. The process adjusts the substrate temperature and pressure to a level promoting the deposition of the dielectric layer. Typically, this temperature is between about 30–1000� C. (more preferably about 300 to 680� C., for example 450–550� C.), and the pressure is below 100 mT. The temperature control mechanism preheats the wafer first to drive out certain interfering species. During deposition, the temperature may be maintained by supplying a heat transfer gas between a back surface of the substrate and a surface of the substrate holder on which the substrate is supported during the film growth operation.
The high density plasma chemical vapor deposition process has deposition and sputter components. In accordance with the present invention, damage to the underlying structure is reduced or prevented by modulating the characteristics of the deposition process such that the deposition component of the process initially dominates the sputter component of the process.
In one embodiment, during the preheat step, prior to commencement of deposition, the wafer is inevitably exposed to direct plasma and carrier gases. The underlying structure (including features, e.g., gaps on the substrate surface and often a SiN gap liner) is susceptible to erosion during this time since it can be oxidized to SiOx or chemically etched if O2, H2 or other substrate reactive species are present in the plasma. Therefore, the invention provides a reactive-species (e.g., O2 and H2) free preheat step.
Process gas components such as O2 or H2 that are reactive with the semiconductor substrate, which may have a SiN gap liner or other surface film (e.g., SiC or SiO2), are then gradually introduced, for example over a period of at least 3 seconds in duration; or at least 5 seconds in duration; or about 10 seconds in duration, and for example according to a linear function, to the reactor in a transition stage between the preheat and the initial deposition step.
Further, a liner step may be added in transition, before the first deposition step of the process. Deposition conditions for this liner are the same as for the initial deposition step, however, the HF power is delayed until after introduction of the silicon-containing precursor (e.g., SiH4), for example for about 2 to 10 seconds, depending upon the deposition rate of the process (e.g., about 2 seconds for a relatively fast deposition rate), and then gradually increased, for example over a period of about 2 to 10 seconds (e.g., about 2 seconds), and for example according to a linear function, in the presence of the silicon-containing precursor, to the full level used for the deposition during this transitional liner step. In this way, some unbiased dielectric deposition occurs on the underlying structure prior to application of the HF (bias) power so that it is protected from the sputter component of the HDP deposition once the HF power is started, and is not subjected to full power plasma before at least some deposition has occurred. In some embodiments, the delay in introduction of the HF power is roughly inversely proportional to the process deposition rate in order to promote effective filling of the gap and prevent premature gap closure.
The reactor system introduces a process gas to the reaction chamber via one or more inlets. The process gas generally includes a dielectric precursor species such as high vapor pressure silicon-containing compounds, molecular oxygen or another oxygenated compound and a carrier gas. The carrier gas may be an inert carrier gas such as helium. However, in high aspect ratio gap fill applications the carrier gas preferably is or includes molecular or elemental hydrogen which inhibits precursor dissociation and promotes bottom-up gap fill. All the process gas components are introduced at specified flow rates and at specified times relative to one another, as noted above and described in further detail below.
An electrical subsystem applies a bias to the substrate, to thereby direct charged precursor species from the plasma onto the substrate and grow a dielectric film. Note that the substrate itself serves as an electrode here. Its bias accelerates charged species to it. Typically, the substrate electrode is powered by a high frequency RF bias and the induction coil is powered by a lower frequency RF source. As noted above, in accordance with the invention, the HF power is gradually increased to the full level used for the deposition during the transitional liner step so as not to subject the underlying structure to full power plasma before at least some deposition has occurred.
Dielectric is deposited in the gap or gaps on the substrate to a desired thickness, generally at the point where the gap is filled (single step gap fill) or, for higher aspect ration gaps, at the point where the overhang that forms at the gap entry point prevents further effective filling of the gap.
Any suitable deposition chemistry may be used. In general, an HDP CVD process gas will include a precursor for the deposition layer. If the dielectric is a silicon-containing dielectric, then the process gas will include a silicon-bearing compound such as silane The process gas will also generally include a carrier gas. The carrier gas may be an inert gas, such as He and/or other noble gases. Or the carrier gas may be or include elemental or molecular hydrogen. Oxygen to form the silicon oxide or other dielectric material may be provided by the silicon-containing precursor itself or from another process gas such as elemental oxygen (O2), nitric oxide (NO), and/or nitrous oxide (N2O).
The deposition process gas will have a particular composition represented by flow rates of the constituent gases in units of standard cubic centimeter per minute (sccm). The process gas will include a silicon-based precursor for the deposition layer, such as SiH4, SiF4, Si2H6, TEOS (tetraethyl orthosilicate), TMCTS (tetramethyl-cyclotetrasiloxane), OMCTS (octamethyl-cyclotetrasiloxane), methyl-silane, dimethyl-silane, 3MS (trimethylsilane), 4MS (tetramethylsilane), TMDSO (tetramethyl-disiloxane), TMDDSO (tetramethyl-diethoxyl-disiloxane), DMDMS (dimethyl-dimethoxyl-silane) and mixtures thereof. During deposition, the process decomposes the silicon-containing reactant to form a silicon-containing gas and plasma phase species, which can react on the surface of the substrate.
The process gas will also generally include a carrier gas. The carrier gas may be an inert gas, such as He and/or other noble gases. Or the carrier gas may be or include elemental or molecular hydrogen.
Oxygen to form the silicon oxide or other dielectric material may be provided by the silicon-containing precursor itself or from another process gas such as elemental oxygen (O2), nitric oxide (NO), and/or nitrous oxide (N2O).
Typical flow rate ranges for process gases of the present invention are listed below.
Flow Rate (sccm)
Generally, other oxygen and silicon-containing compounds can be substituted for those listed in this table. Depending upon the atom counts in the precursor gases, the flow rate ranges may have to be changed. While there are no precise rules for modifying flow rates as a function of molecular structure, generally the flow rate of the silicon-containing precursor may be reduced by a factor corresponding to the number of silicon atoms in the molecule. So, for example, if the molecule contains two silicon atoms, one may expect to reduce the flow rate of the silicon-containing precursor to a level of between about 5 and 150 sccm.
In some embodiments, the flow rate of hydrogen employed is at least about 200 sccm, based on a 200 millimeter substrate. Larger substrates require higher flow rates. The flow rate may vary somewhat when special injector configurations are employed.
The invention is also practiced with process gases containing noble gas (e.g., argon, helium, or xenon), with helium being preferred, either as the sole carrier gas, or in a mixture with hydrogen. The use of noble gases can be practiced under the conditions of the above-described embodiments, and their flow rate can be used in order to modulate the effect of other process gas components (e.g., hydrogen) on the deposition profile of the deposited oxide film.
For doped dielectrics (particularly silicon dioxide based dielectrics), the process gas may include a dopant precursor such as a boron-containing gas, a phosphorus-containing gas, a carbon-containing gas, or a mixture thereof. In a specific embodiment, the gas includes one or more boron-containing reactants and one or more phosphorus-containing reactants and the dielectric film includes a phosphorus- and boron-doped silicon oxide glass (BPSG). Examples of suitable boron and phosphorus precursor gases include the following: B2H6 and PH3.
If the dielectric is to contain an oxyfluoride (e.g., silicon oxyfluoride), then the process gas preferably includes a fluorine-containing reactant such as silicon hexafluoride (SiF4). If the dielectric is to contain an oxynitride (e.g., silicon oxynitride), then the process gas preferably includes a nitrogen-containing reactant such as N2, NH3, NF3, NO, N2O, and mixtures thereof.
The method applies as well to the deposition of carbon-doped silicon oxide from process gas mixtures including organosilanes (e.g., TEOS (tetraethyl orthosilicate), TMCTS (tetramethyl-cyclotetrasiloxane), OMCTS (octamethyl-cyclotetrasiloxane), methyl-silane, dimethyl-silane, 3MS (trimethylsilane), 4MS (tetramethylsilane), TMDSO (tetramethyl-disiloxane), TMDDSO (tetramethyl-diethoxyl-disiloxane), DMDMS (dimethyl-dimethoxyl-silane) and mixtures thereof).
The temperature within the process vessel should be maintained sufficiently high to ensure that the dielectric deposition reaction proceeds efficiently. Hence, the temperature preferably resides at values between about 30 and 1000� C. This temperature will vary depending upon the types of precursors employed in the reaction. Further, the temperature may be limited by process constraints, such as thermal budget limitations that preclude temperatures above 700–750� C. Such constraints become increasingly common with advanced technologies and corresponding smaller feature sizes. For such applications, the process temperature is preferably maintained between about 30 and 750� C. In particularly preferred embodiments, the substrate temperature is maintained between about 300 and 600� C., even more preferably between about 350 and 450� C.
As indicated, to control the substrate temperature, the reactor may supply a heat transfer gas between a surface of the substrate and a surface of the substrate holder on which the substrate is supported during film deposition. The heat transfer gas may include at least one of helium and argon. The back-side helium pressure is set by the temperature requirements of the process (a typical range being between 0–15 Torr).
For some applications, it may be desirable to preheat the wafer to a pre-specified relatively low temperature and then gradually raise the temperature. This allows for isothermal operation. The goal is to start the deposition and then maintain the wafer temperature within a narrow range during the entire deposition process.
The pressure of the process chamber is set to a level suitable for the HDP CVD reaction. HDP CVD processes generally operate below 100 mT and preferably below 30 mT, for example between 1.5 and 25 mT. In practice, many processes operate below 5 mT, for example about 3 mT. Some other processes operate at increased pressure, in the range of about 26–75 mT. The pressure should allow relatively rapid deposition while maintaining a high density plasma under the applied frequency and power.
The low frequency power applied to the upper electrode (for generating the plasma) typically varies from 1 kW to 20 kW, and the high frequency power (for biasing the wafer) typically reaches at least about 0.2 W/cm2 (preferably varying from about 0.5 kW to 10 kW) depending on the substrate size (e.g., 200 or 300 mm diameter) and the requirements of the specific process being used.
As indicated above, the bias applied to the substrate is typically a radio frequency bias. Applying radio frequency bias to the substrate involves supporting the substrate on a substrate holder having an electrode supplying a radio frequency bias to the substrate. For many embodiments, the radio frequency bias applied to the substrate is at the frequency range of between about 100 kHz and 27 MHz. The frequency range applied to the upper, plasma-generating electrode is typically between about 300 kHz and 27 MHz.
In another embodiment of the present invention, modulation of the deposition characteristics may be achieved by depositing the dielectric film on the substrate using a high density plasma chemical vapor deposition process in which the characteristics of the deposition process are modulated by changing the pressure in the deposition reactor such that the deposition component of the process initially dominates the sputter component of the process. Reactor pressure may be varied by throttling the flow of gasses exiting the reactor (e.g., with a butterfly valve) or spinning down the pumps supplying process gasses to the reactor. Higher reactor pressure results in lower plasma density raising the neutral component of the plasma. The reactor pressure can then be reduced gradually or stepwise to optimal gap fill conditions. This allows a bit of deposition to build up around feature corners to protect the structures on the substrate before gap fill begins.
For example, initial reactor pressure may be between about 26 and 75 mTorr, e.g., about 40 mTorr, and then subsequently decreased to about 1–10 mTorr, e.g., about 3 mTorr, after about 2–10 seconds, e.g., about 2 seconds. The pressure decrease may gradual over some or all of the initial period of time, and/or may include a step following the initial period of time.
As noted above, the method of the invention also applies to the gap fill using high density plasma deposition process involving in situ (single chamber) or sequential etch process steps. The invention also applies in instances where the deposition steps are etch-assisted, and the implementation does not essentially change. The method can be used in doped silica glass deposition processes as well, including PSG, BPSG and FSG.
In a typical high aspect ratio gap fill process, as a result of non-directional deposition reactions of neutral species in the plasma reactor and from sputtering/redeposition processes during deposition, some problematic top and sidewall deposition result in an overhang at the entry region of the gap and an accumulation of dielectric adjacent to the gap entry, before the gap is filled. Therefore, following this initial deposition step, the detrimental top and sidewall deposition is removed in an etch back process to facilitate further void free filling of the trench.
In such a multi-step process, after finishing the deposition step, the flow of deposition chemistry is turned off and the etchant chemistry is introduced to the reaction chamber via an inlet to conduct a plasma etch back. The etchant gas should dissociate at a controlled rate. An NF3/He (carrier)-based etch chemistry is typically used. Molecular oxygen, Ar and/or H2 may also be present in the etchant chemistry and are gradually introduced, for example over a period of at least 3 seconds in duration; or at least 5 seconds in duration; or about 10 seconds in duration, and for example according to a linear function, in the transition between the deposition and etch steps. This gradual transition to the etch stage can provide a benefit by reducing the flow rate of etch gases at the latter stages of the etch process as the device elements become exposed or nearly exposed, thereby decreasing the likelihood of damaging the underlying structure. All the process gas components are introduced at specified flow rates within the parameters noted above. In a specific embodiment, the etch is conducted using an inductively coupled plasma source in the reactor. The RF bias power applied to the substrate in the reactor is adjusted to between about 500 and 5000 W, for example 2000 W. It should be noted that the inductively coupled plasma (ICP) etch may alternatively be accomplished by a downstream microwave plasma etch. The etch back process preferentially removes dielectric top and sidewall overhang features at the gap opening thereby decreasing the gap's aspect ratio and facilitating further filling in subsequent deposition processing.
The etch back process may be carried out according to any appropriate etch enhanced gap fill etch back procedure, such as is described in U.S. Pat. No. 6,030,881, incorporated by reference herein in its entirety and for all purposes, for example. Suitable etch process condition ranges are as follows:
Gas Flow Rate (sccm) NF3 10–500 O2 0–1000 He 0–500 H2 0–5000 Ar 0–500
Suitable etch back process reactor pressure ranges from about 5 to 65 mT and duration from about 5–700 seconds. Of course, these parameters may be varied as is known in the art. For example, alternative etch gases, such as NF3, C2F6, SF6, etc., may be used. The etch back process is not purely isotropic, as there is bias on the wafer resulting in ion bombardment and anistropic etch. The etch back process may be conducted in a separate reactor process chamber, but is preferably conducted in the same chamber as the deposition to enable a single chamber, multi-step gap fill procedure.
The conditions are preferably set so that the etch is selective for the HDP CVD deposited dielectric (e.g., SiO2) relative to the silicon generally barrier layer lining the trench. Adjustment of the process selectivity is within the skill in the art given the process parameters and description provided herein. The parameter values above are in reference to a 200 mm chamber. The process can be implemented in other chambers, for example, a 300 mm chamber as well. In that case, the flows need to be scaled accordingly.
The etch process removes oxide from the top and sidewalls and opens the gap for access of deposition ions to fill the gap from the bottom up in a subsequent HDP deposition.
Following the etch, etch process chemistry flows are gradually reduced, for example over a period of at least 3 seconds in duration; or at least 5 seconds in duration; or about 10 seconds in duration, and for example according to a linear function, and further deposition process for filling the remaining gap is performed by gradually introducing the deposition process gases into the reactor, as described above Again, the gradual introduction avoids damage to underlying structures, particularly corners of periphery structures and trenches that are exposed or nearly exposed during the preceding etch stage. The etch back and deposition process is then repeated until the gap is filled.
Thus, a multi-step etch enhanced embodiment of the invention involves gradually modulating deposition and etch components during transitions between process steps. The gradual introduction/modulation of process gasses and plasma power according to this invention has been demonstrated to successfully achieve gap fill without liner or underlying structure erosion. It should be noted that a gradual transition between process stages may be beneficial if practiced for any or all of the stage transitions, including the process initiation. Accordingly, the invention contemplates processes in which a gradual transition as described herein is used between at least two different stages and between up to all of the stages, in the case of a multi-step process.
One specific embodiment of the present invention is described and illustrated with reference to
In order to protect the underlying structure, which in a specific embodiment includes a SiN gap liner, a liner step is added before the first deposition step of the process. In the case of a NF3 etch enhanced process, which includes three or more deposition-etch steps, the liner step is derived from the first deposition step D1 of the process. A lower SD ratio of 0.02 of the D1 process is targeted as the liner step. The deposition time is typically for 5 seconds which targets a thickness of 200 Å. It has been found that the introduction of HF power during the first 3 seconds of the liner step is helpful in protecting the nitride.
As shown in
While described with reference to a multi-step gap fill process herein, the procedure and steps taken to prevent structure erosion noted above are also applicable to a single step gap fill deposition process.
Implementation: Plasma Processing Reactor
Various plasma reactor designs are suitable for use with this invention. The particular design is not critical to this invention. It merely needs to support HDP CVD dielectric layer formation and etch back on appropriate substrates. Examples of suitable reactors include the Novellus SPEED reactor, available from Novellus Systems, Inc. of San Jose, Calif., and the Ultima reactor, available from Applied Materials, Inc. of Santa Clara, Calif.
The principal components of most suitable reactors include a reaction chamber, a process gas delivery system, a support for the substrate, one or more electrodes or radio frequency power source coupled to an induction coil to generate an inductively coupled plasma, and a bias source for the substrate. A temperature control system is typically used to heat the substrate. Suitable plasma processing reactors and described, for example, in U.S. Pat. Nos. 5,346,578, 5,405,480 and 5,605,599, the disclosures of which are incorporated by reference herein in their entirety and for all purposes.
Within the reactor, a wafer pedestal 607 supports a substrate 609. The pedestal typically includes a chuck 608 to hold the substrate in place during the deposition reaction. The chuck may be an electrostatic chuck, a mechanical chuck or various other types of chuck as are available for use in the industry and/or research.
A heat transfer subsystem including a line 611 for supplying a heat transfer gas controls the temperature of substrate 609. In some embodiments, the heat transfer fluid comprises at least one of helium and argon gas. The heat transfer fluid is supplied to a space 613 between the surface of the substrate and a surface of the chuck.
A "high frequency" RF source 615 serves to electrically bias substrate 609 and draw charged precursor species onto the substrate for the deposition or etch reactions. Electrical energy from source 615 is coupled to substrate 609 via an electrode or capacitive coupling, for example. Note that the bias applied to the substrate need not be an RF bias. Other frequencies and DC bias may be used as well. In a specific embodiment, source 615 supplies a radio frequency bias to the substrate with a power ranges from 0.5 kW to 10 kW.
The process gases are introduced via one or more chamber inlets 617. The gases may be premixed or not. Other sources of dielectric precursor gases and carrier gases are also provided. Preferably, the process gas is introduced through a gas supply inlet mechanism including orifices. The gas or gas mixture may be introduced from a primary gas ring, which may or may not direct the gas toward the substrate surface. In this embodiment, a ring inlet(s) 618 is connected to the primary gas ring 619 to supply gas or gas mixture into the chamber via the chamber inlets 617. This arrangement is further illustrated in the horizontal cross-section of
The process gas exits the chamber 603 via an outlet or outlets 620. A vacuum pump (e.g., a turbomolecular pump) or pumps 622 typically draws the gas out and maintains a suitably low pressure within the reactor.
As noted above, the gap fill process of the present invention is preferably accomplished in a single reactor process chamber, but it may also be accomplished in a plurality of processing chambers. When more than one processing chamber is used, a pressure controlled transfer module should be used to transfer the wafers from one chamber to another. Such transfer modules and procedures are known to those of skill in the art.
Substrates and Dielectric Materials
The above-described processes and apparatuses may deposit dielectric on any type of substrate that requires thin dielectric layers. Often, the substrate will be a semiconductor wafer having gaps in need of dielectric filling. The invention is not, however, limited to such applications. It may be employed in a myriad of other fabrication processes such as for fabricating flat panel displays.
As indicated above, this invention finds particular value in integrated circuit fabrication. The gap filling processes are performed on partially fabricated integrated circuits employing semiconductor substrates. In specific examples, the gap filling processes of this invention are employed to form shallow trench isolation (STI), pre-metal dielectric (PMD), inter-metal layer dielectric (ILD) layers, passivation layers, etc.
As indicated, the invention can effectively fill gaps having widths of 0.1 microns or less, for example 0.09 micron or less, and aspect ratios of 6:1 or greater, for example 7:1, 8:1, or even 10:1 or greater. More aggressive structures having, e.g., greater aspect ratios and smaller widths may also be used.
The dielectrics employed to fill those gaps will often be a silicon oxide such as silicon dioxide, silicon oxynitride, silicon oxyfluoride, and doped variants of each of these, or even or carbon doped low-k materials. Therefore, the scope of the invention includes at least phosphorus-doped, boron/phosphorus-doped oxides and fluorine/phosphorus-doped oxides. As indicated, the dielectric may also be a phosphorus- and boron-doped silicon oxide glass (BPSG).
While this invention has been described in terms of a few preferred embodiments, it should not be limited to the specifics presented above. Many variations on the above-described preferred embodiments, may be employed. Therefore, the invention should be broadly interpreted with reference to the following claims.
|Cited Patent
|Filing date
|Publication date
|Mar 13, 1981
|Nov 30, 1982
|Bell Telephone Laboratories, Incorporated
|Hydrogen etching of semiconductors and oxides
|May 23, 1991
|Jul 14, 1992
|Applied Materials, Inc.
|Cleaning method for semiconductor wafer processing apparatus
|Jun 23, 1992
|Jul 13, 1993
|Sony Corporation
|Method of forming multilayer interconnection structure
|Aug 20, 1992
|Sep 21, 1993
|International Business Machines Corporation
|Deposition method for high aspect ratio features using photoablation
|Jun 24, 1992
|Oct 12, 1993
|Texas Instruments Incorporated
|Multi-zone plasma processing method and apparatus
|Jul 21, 1992
|Dec 14, 1993
|Intel Corporation
|Process for filling submicron spaces with dielectric
|Nov 9, 1992
|Feb 1, 1994
|International Business Machines Corporation
|Device and method for accurate etching and removal of thin film
|Mar 8, 1993
|Aug 30, 1994
|National Semiconductor Corporation
|Controllable isotropic plasma etching technique for the suppression of stringers in memory cells
|Dec 21, 1992
|Jan 31, 1995
|U.S. Philips Corporation
|Method of manufacturing a semiconductor device with high packing density and having field effect transistors
|Aug 17, 1994
|Feb 27, 1996
|Texas Instruments Incorporated
|Enhancement in throughput and planarity during CMP using a dielectric stack containing HDP-SiO2 films
|Jun 3, 1994
|May 14, 1996
|Advanced Micro Devices, Inc.
|Method for planarizing a semiconductor topography using a spin-on glass material with a variable chemical-mechanical polish rate
|Mar 28, 1995
|Jul 2, 1996
|Lsi Logic Corportion
|Techniques for via formation and filling
|Jun 7, 1995
|Apr 15, 1997
|Texas Instruments Incorporated
|Enhancement in throughput and planarity during CMP using a dielectric stack containing HDP-SiO2 films
|Mar 15, 1996
|Apr 22, 1997
|Taiwan Semiconductor Manufacturing Company Ltd
|Process to minimize a seam in tungsten filled contact holes
|May 26, 1995
|Jun 3, 1997
|International Business Machines Corporation
|Sealed chamber with heating lamps provided within transparent tubes
|Jun 7, 1995
|Jun 24, 1997
|Micron Technology, Inc.
|Method to deposit highly conformal CVD films
|Mar 28, 1996
|Dec 30, 1997
|Taiwan Semiconductor Manufacturing Company, Ltd.
|Method for making metal contacts and interconnections concurrently on semiconductor integrated circuits
|Jul 27, 1994
|Jan 6, 1998
|National Semiconductor Corp.
|Controllable isotropic plasma etching technique for the suppression of stringers in memory cells
|May 31, 1996
|Jan 27, 1998
|Lam Research Corporation
|Method of polycrystalline silicon hydrogenation
|Jun 21, 1996
|Aug 4, 1998
|Texas Instruments Incorporated
|Structure with selective gap fill of submicron interconnects
|Jul 12, 1996
|Nov 10, 1998
|Applied Materials, Inc.
|Wafer surface temperature control for deposition of thin films
|Sep 24, 1996
|Dec 22, 1998
|Applied Materials, Inc.
|Ultrasonic wave assisted contact hole filling
|Apr 1, 1996
|Jan 12, 1999
|Chartered Semiconductor Manufacturing, Ltd.
|Simultaneous deposit and etch method for forming a void-free and gap-filling insulator layer upon a patterned substrate layer
|Mar 11, 1996
|Feb 9, 1999
|Samsung Electronics Co., Ltd.
|Semiconductor device and manufacturing method thereof
|Jun 17, 1997
|Feb 16, 1999
|Novellus Systems, Inc.
|High aspect ratio gapfill process by using HDP
|Oct 28, 1996
|Apr 27, 1999
|International Business Machines Corporation
|High aspect ratio low resistivity lines/vias by surface diffusion
|Dec 18, 1996
|Jun 8, 1999
|Nec Corporation
|Method for fabricating a semiconductor device having a refractory metal pillar for electrical connection
|Oct 22, 1997
|Jun 8, 1999
|Rush-Presbyterian -St. Luke's Medical Center
|User interface for echocardiographic report generation
|Dec 23, 1996
|Jun 15, 1999
|Lam Research Corporation
|Method for reduction of plasma charging damage during chemical vapor deposition
|Mar 19, 1998
|Jul 6, 1999
|Winbond Electronics Corp
|High density plasma enhanced chemical vapor deposition process in combination with chemical mechanical polishing process for preparation and planarization of intemetal dielectric layers
|Jun 3, 1997
|Aug 10, 1999
|Applied Materials, Inc.
|Sequencing of the recipe steps for the optimal low-k HDP-CVD processing
|Dec 19, 1996
|Sep 14, 1999
|Intel Corporation
|Interlayer dielectric with a composite dielectric stack
|Aug 7, 1995
|Oct 5, 1999
|Applied Materials, Inc.
|Semiconductor device having a low thermal budget metal filling and planarization of contacts, vias and trenches
|Nov 13, 1996
|Oct 5, 1999
|Applied Materials, Inc.
|Methods for depositing premetal dielectric layer at sub-atmospheric and high temperature conditions
|Oct 28, 1997
|Oct 19, 1999
|United Microelectronics Corp.
|Multi-step high density plasma chemical vapor deposition process
|Jul 23, 1997
|Oct 26, 1999
|Advanced Micro Devices, Inc.
|Pulse electroplating copper or copper alloys
|Nov 24, 1998
|Feb 22, 2000
|Georgia Tech Research Corporation
|Method and apparatus for low energy electron enhanced etching of substrates
|May 5, 1998
|Feb 29, 2000
|Novellus Systems, Inc.
|High throughput chemical vapor deposition process capable of filling high aspect ratio structures
|Jul 1, 1998
|Mar 14, 2000
|Taiwan Semiconductor Maufacturing Company
|Shallow trench isolation filled by high density plasma chemical vapor deposition
|Mar 27, 1997
|Jun 20, 2000
|Kabushiki Kaisha Toshiba
|Method and apparatus for etching of silicon materials
|Aug 18, 1997
|Jun 20, 2000
|Nec Corporation
|Plasma CVD process for forming a fluorine-doped SiO2 dielectric film
|Oct 28, 1997
|Aug 8, 2000
|United Microelectronics Corp.
|Intermetal dielectric layer formation with low dielectric constant using high density plasma chemical vapor deposition process
|May 22, 1998
|Aug 22, 2000
|Lam Research Corporation
|Method of high density plasma CVD gap-filling
|Oct 10, 1995
|Sep 26, 2000
|Fsi International, Inc.
|Cleaning method
|Sep 3, 1998
|Oct 24, 2000
|Micron Technology, Inc.
|Methods for forming phosphorus- and/or boron-containing silica layers on substrates
|Nov 3, 1998
|Nov 21, 2000
|Novellus Systems, Inc.
|Low-k BSG gap fill process using HDP
|Dec 23, 1996
|Feb 6, 2001
|Lam Research Corporation
|Inductively coupled plasma CVD
|Feb 16, 1996
|Mar 13, 2001
|Novellus Systems, Inc.
|Chemical vapor deposition system including dedicated cleaning gas injection
|Oct 10, 1997
|Apr 3, 2001
|Applied Materials, Inc.
|Method of depositing and amorphous fluorocarbon film using HDP-CVD
|Mar 5, 1999
|May 15, 2001
|Asm America, Inc.
|Method of depositing silicon with high step coverage
|Aug 6, 1999
|Jul 24, 2001
|Mosel Vitelic Inc.
|Method for fabricating a concave bottom oxide in a trench
|Dec 30, 1998
|Aug 21, 2001
|Samsung Electronics Co., Ltd.
|Interlayered dielectric layer of semiconductor device and method of manufacturing the same
|Dec 30, 1999
|Dec 18, 2001
|Novellus Systems, Inc.
|Deposition of low dielectric constant thin film without use of an oxidizer
|May 31, 2000
|Jan 1, 2002
|International Business Machines Corporation
|Directional CVD process with optimized etchback
|Apr 1, 1998
|May 28, 2002
|Novellus Systems, Inc.
|Very high aspect ratio gapfill using HDP
|Jan 22, 2001
|Jun 4, 2002
|Advanced Micro Devices, Inc.
|Integration of low-k SiOF for damascene structure
|Mar 20, 2000
|Jun 25, 2002
|United Microelectronics Corp.
|Method for gap filling
|Aug 31, 2000
|Sep 17, 2002
|Micron Technology, Inc.
|Self-aligned PECVD etch mask
|Mar 17, 2000
|Nov 12, 2002
|Hynix Semiconductor Inc.
|Isolation structure and fabricating method therefor
|Feb 28, 2001
|Nov 12, 2002
|Infineon Technologies Richmond, Lp
|Dry polymer and oxide veil removal for post etch cleaning
|Nov 24, 1999
|Nov 26, 2002
|Applied Materials, Inc.
|Gas distribution system for a CVD processing chamber
|May 24, 2002
|Dec 31, 2002
|Taiwan Semiconductor Manufacturing Company
|Shallow trench isolation (STI) module to improve contact etch process window
|Jul 13, 2001
|Mar 11, 2003
|Infineon Technologies Ag
|Method for high aspect ratio gap fill using sequential HDP-CVD
|Nov 26, 2001
|May 20, 2003
|Samsung Electronics Co., Ltd.
|Method of forming an insulating layer in a trench isolation type semiconductor device
|Oct 2, 2002
|May 27, 2003
|Taiwan Semiconductor Manufacturing Co., Ltd
|Plasma etching method to form dual damascene with improved via profile
|May 11, 2001
|Jul 22, 2003
|Applied Materials, Inc.
|Hydrogen assisted undoped silicon oxide deposition process for HDP-CVD
|Nov 28, 2001
|Jul 22, 2003
|Novellus Systems, Inc.
|Gap fill for high aspect ratio structures
|Feb 25, 2002
|Jul 29, 2003
|Texas Instruments Incorporated
|Method for photoresist strip, sidewall polymer removal and passivation for aluminum metallization
|Sep 14, 2000
|Sep 9, 2003
|Tokyo Electron Limited
|Method and system for forming a stacked gate insulating film
|Apr 24, 2002
|Nov 4, 2003
|Samsung Electronics Co., Ltd.
|Semiconductor device having multi-gate insulating layers and methods of fabricating the same
|Oct 20, 1999
|Mar 16, 2004
|Advanced Micro Devices, Inc.
|Method and apparatus for controlling wafer uniformity using spatially resolved sensors
|Oct 9, 2002
|May 18, 2004
|Nanya Technology Corporation
|Method of fabricating a shallow trench isolation structure
|May 20, 2003
|Sep 7, 2004
|Novellus Systems, Inc.
|Gap fill for high aspect ratio structures
|Dec 3, 2001
|Sep 21, 2004
|Novellus Systems, Inc.
|Method of chemical modification of structure topography
|Jan 23, 2003
|Oct 26, 2004
|Applied Materials, Inc.
|Hydrogen assisted HDP-CVD deposition process for aggressive gap-fill technology
|Apr 25, 2002
|Nov 2, 2004
|Taiwan Semiconductor Manufacturing Co., Ltd.
|Method for forming a carbon doped oxide low-k insulating layer
|Jul 30, 2002
|Nov 23, 2004
|Taiwan Semiconductor Manufacturing Co., Ltd
|Method for avoiding carbon and nitrogen contamination of a dielectric insulating layer
|Dec 21, 2001
|Jan 25, 2005
|Novellus Systems
|Process for depositing F-doped silica glass in high aspect ratio structures
|Jan 28, 2002
|Jan 25, 2005
|Novellus Systems, Inc.
|High-density plasma process for filling high aspect ratio structures
|Jul 31, 2002
|Feb 8, 2005
|Infineon Technologies Ag
|Etching processing method for a material layer
|Mar 13, 2003
|Mar 15, 2005
|Novellus Systems, Inc.
|Multi-step deposition and etch back gap fill process
|May 27, 2003
|Oct 25, 2005
|Applied Materials, Inc.
|Methods and systems for high-aspect-ratio gapfill using atomic-oxygen generation
|Oct 11, 2002
|Feb 21, 2006
|Novellus Systems, Inc.
|Hydrogen-based phosphosilicate glass process for gap fill of high aspect ratio structures
|Jul 13, 2004
|Jun 27, 2006
|Novellus Systems, Inc.
|Gap fill for high aspect ratio structures
|Sep 2, 2003
|Jul 18, 2006
|Novellus Systems, Inc.
|Method for controlling etch process repeatability
|Dec 9, 2002
|Oct 17, 2006
|Novellus Systems, Inc.
|Deposition profile modification through process chemistry
|Feb 5, 2001
|Sep 6, 2001
|Paul Kevin Shufflebotham
|Inductively coupled plasma CVD
|Nov 19, 1999
|Nov 22, 2001
|Richard J. Huang
|Surface treatment of low-k siof to prevent metal interaction
|Mar 31, 1999
|May 2, 2002
|Patrick A. Van Cleemput
|In-situ flowing bpsg gap fill process using hdp
|Nov 5, 2001
|Jul 4, 2002
|Applied Materials, Inc.
|Intergrated low k dielectrics and etch stops
|Jun 5, 2001
|Dec 5, 2002
|International Business Machines Corporation
|Method of etching high aspect ratio openings
|Sep 4, 2002
|Jan 2, 2003
|Applied Materials, Inc.
|Staggered in-situ deposition and etching of a dielectric layer for HDP CVD
|Jun 6, 2002
|Jan 2, 2003
|Hans-Peter Moll
|Method for manufacturing an isolation trench filled with a high-density plasma-chemical vapor deposition oxide
|Nov 6, 2002
|May 8, 2003
|Markus Kirchhoff
|Method of filling substrate depressions with silicon oxide by high-density-plasma vapor phase deposition with participation of H2O2 or H2O as reaction gas
|Mar 1, 2002
|Sep 4, 2003
|Taiwan Semiconductor Manufacturing Co., Ltd.
|Method of reducing stress induced defects in an HDP-CVD process
|Apr 25, 2002
|Oct 30, 2003
|Tien-I Bao
|Method for forming a carbon doped oxide low-k insulating layer
|May 3, 2002
|Nov 6, 2003
|Applied Materials, Inc.
|HDP-CVD dep/etch/dep process for improved deposition into high aspect ratio features
|Aug 2, 2002
|Feb 5, 2004
|Veeco Instruments, Inc.
|High selectivity etching of a lead overlay structure
|Dec 17, 2002
|Mar 25, 2004
|Nanya Technology Corporation
|Method for forming shallow trench isolation
|Oct 16, 2003
|Apr 29, 2004
|Doan Trung Tri
|Methods of forming trench isolation regions
|Nov 18, 2003
|Jun 10, 2004
|Fasl Llc
|Semiconductor memory device and method of fabricating the same
|May 27, 2003
|Dec 2, 2004
|Applied Materials, Inc.
|Methods and systems for high-aspect-ratio gapfill using atomic-oxygen generation
|Oct 2, 2003
|Apr 7, 2005
|Hsiu-Chuan Chu
|[silicon oxide gap-filling process]
|Mar 25, 2004
|Jun 16, 2005
|Taiwan Semiconductor Manufacturing Co.
|Method for forming openings in low-k dielectric layers
|Dec 3, 2004
|Jun 23, 2005
|Canon Kabushiki Kaisha
|Plasma treatment method and plasma treatment apparatus
|Dec 16, 2004
|Jun 23, 2005
|Kim Do-Hyung
|Gap-fill method using high density plasma chemical vapor deposition process and method of manufacturing integrated circuit device
|Bayman et al., "Gap Fill For High Aspect Ratio Structures", Novellus Systems, Inc., filed Jul. 13, 2004, U.S. Appl. No. 10/890,655, pp. 1-24.
|Guari et al., "Method of Preventing Structures Erosion During Multi-Step Gap Fill", Novellus Systems, Inc., filed Dec. 4, 2003, U.S. Appl. No. 10/728,569, pp. 1-29.
|Hook et al., "The Effects of Fluorine on Parametrics and Reliability in a 0.18-mum 3.5/6.8 nm Dual Gate Oxide CMOS Technology", IEEE Transactions on Electron Devices, vol. 48, No. 7., Jul. 2001, pp. 1346-1353.
|Lang et al., "Helium-Based Etch Process in Deposition-Etch-Deposition Gap Fill", Novellus Systems, Inc., filed Jun. 22, 2005, U.S. Appl. No. 11/159,834, pp. 1-29.
|Lang et al., "Stain Engineering-HDP Thin Film With Tensile Stress For FEOL and Other Applications", Novellus Systems, Inc., filed Nov. 17, 2004, U.S. Appl. No. 10/991,890, pp. 1-35.
|Lang et al., "Using Water (H20) To Replace Oxygen (02) In A Silicon Dioxide (Si02) Thin Film Deposition Process for HDP STI Technology", Novellus Systems, Inc., filed Nov. 9, 2005, U.S. Appl. No. 11/272,487, pp. 1-25.
|Nguyen et al., "Halogen-Free Noble Gas Assisted H<SUB>2 </SUB>Plasma Etch Process in Deposition-Etch-Deposition Gap Fill", Novellus Systems, Inc., filed Mar. 1, 2006, U.S. Appl. No. 11/366,220.
|Papasouliotis et al., "Dynamic Modification of Gap-Fill Process Characteristics", Novellus Systems, Inc., filed Sep. 21, 2004, U.S. Appl. No. 10/947,424, pp. 1-25.
|Papasouliotis et al., "Dynamic Modification of Gap-Fill Process Characteristics", U.S. Appl. No. 10/947,424, filed Sep. 21, 2004.
|Papasouliotis et al., "Hydrogen-Based Phosphosilicate Glass Process for Gap Fill of High Aspect Ratio Structures", Novellus Systems, Inc., filed Oct. 11, 2002, U.S. Appl. No. 10/271,333, pp. 1-28.
|Papasoulitotis et al., "Deposition Profile Modification Through Process Chemistry", Novellus Systems, Inc., filed Dec. 9, 2002, U.S. Appl. No. 10/316,987, pp. 1-35.
|Shanker et al., "Hydrogen Treatment Enhanced Gap Fill", Novellus Systems, Inc., filed Mar. 16, 2005, U.S. Appl. No. 11/082,369, pp. 1-33.
|Sutanto et al., "Method For Controlling Etch Process Repeatability", Novellus Systems, Inc., filed Sep. 2, 2003, U.S. Appl. No. 10/654,113, pp. 1-31.
|U.S. Office Action mailed Apr. 14, 2004, from U.S. Appl. No. 10/271,333.
|U.S. Office Action mailed Apr. 19, 2005, from U.S. Appl. No. 10/733,85.
|U.S. Office Action mailed Apr. 19, 2006, from U.S. Appl. No. 10/947,424.
|U.S. Office Action mailed Apr. 30, 2004, from U.S. Appl. No. 10/389,164.
|U.S. Office Action mailed Aug. 10, 2004, from U.S. Appl. No. 10/271,333.
|U.S. Office Action mailed Aug. 6, 2003, from U.S. Appl. No. 10/058,897.
|U.S. Office Action mailed Dec. 14, 2005, from U.S. Appl. No. 10/728,569.
|U.S. Office Action mailed Dec. 2, 2004, from U.S. Appl. No. 10/654,113.
|U.S. Office Action mailed Feb. 16, 2006, from U.S. Appl. No. 11/082,369.
|U.S. Office Action mailed Jan. 27, 2005, from U.S. Appl. No. 10/316,987.
|U.S. Office Action mailed Jan. 29, 2004, from U.S. Appl. No. 10/058,897.
|U.S. Office Action mailed Jan. 7, 2005, from U.S. Appl. No. 10/728,569.
|U.S. Office Action mailed Jul. 14, 2005, from U.S. Appl. No. 10/316,987.
|U.S. Office Action mailed Jul. 25, 2005, from U.S. Appl. No. 10/890,655.
|U.S. Office Action mailed Jun. 1, 2006, from U.S. Appl. No. 10/728,569.
|U.S. Office Action mailed Jun. 17, 2004, from U.S. Appl. No. 10/654,113.
|U.S. Office Action mailed Jun. 29, 2005, from U.S. Appl. No. 10/728,569.
|U.S. Office Action mailed Mar. 2, 2004, from U.S. Appl. No. 10/442,846.
|U.S. Office Action mailed Mar. 24, 2006, from U.S. Appl. No. 10/733,858.
|U.S. Office Action mailed Mar. 31, 2005, from U.S. Appl. No. 10/654,113.
|U.S. Office Action mailed May 21, 2004, from U.S. Appl. No. 10/058,897.
|U.S. Office Action mailed Nov. 17, 2005, from U.S. Appl. No. 10/316,987.
|U.S. Office Action mailed Nov. 6, 2002, from U.S. Appl. No. 09/996,619.
|U.S. Office Action mailed Oct. 18, 2005, from U.S. Appl. No. 10/947,424.
|U.S. Office Action mailed Oct. 7, 2005, from U.S. Appl. No. 10/733,85.
|U.S. Office Action mailed Sep. 29, 2006, from U.S. Appl. No. 11/082,369.
|Yu et al., "Stress Profile Modulation in STI Gap Fill," Novellus Systems, Inc., U.S. Appl. No. 11/471,958, filed Jun. 20, 2006, pp. 1-27.
|Zhu et al., "Biased H<SUB>2 </SUB>Etch Process In Deposition-Etch-Deposition Gap Fill", Novellus Systems, Inc., filed Dec. 10, 2003, U.S. Appl. No. 10/733,858, pp. 1-28.
|Citing Patent
|Filing date
|Publication date
|Nov 17, 2004
|Jun 3, 2008
|Novellus Systems, Inc.
|Strain engineering—HDP thin film with tensile stress for FEOL and other applications
|Oct 27, 2006
|Jan 13, 2009
|Stmicroelectronics S.A.
|Forming of a cavity in an insulating layer
|Mar 1, 2006
|Jan 13, 2009
|Novellus Systems, Inc.
|Halogen-free noble gas assisted H2 plasma etch process in deposition-etch-deposition gap fill
|Jun 20, 2006
|Jan 27, 2009
|Novellus Systems, Inc.
|Stress profile modulation in STI gap fill
|May 9, 2007
|Oct 20, 2009
|Jusung Engineering Co., Ltd.
|Method of gap-filling using amplitude modulation radio frequency power
|Sep 4, 2008
|Jun 29, 2010
|Applied Materials, Inc.
|Impurity control in HDP-CVD DEP/ETCH/DEP processes
|Sep 4, 2008
|Jan 11, 2011
|Applied Materials, Inc.
|Reduction of etch-rate drift in HDP processes
|Apr 6, 2007
|May 31, 2011
|Novellus Systems, Inc
|In-situ process layer using silicon-rich-oxide for etch selectivity in high AR gapfill
|Sep 13, 2009
|Oct 18, 2011
|Jusung Engineering Co., Ltd.
|Method of gap-filling using amplitude modulation radiofrequency power and apparatus for the same
|May 16, 2008
|Mar 13, 2012
|Novellus Systems, Inc.
|Protective layer to enable damage free gap fill
|Jul 7, 2011
|Apr 30, 2013
|United Microelectronics Corp.
|Method for fabricating semiconductor device
|Jun 6, 2012
|Jul 30, 2013
|Applied Materials, Inc.
|Integrated process modulation for PSG gapfill
|Mar 15, 2012
|Apr 14, 2015
|Tokyo Electron Limited
|Film deposition method and film deposition apparatus
|Mar 15, 2013
|Apr 28, 2015
|Applied Materials, Inc.
|Low shrinkage dielectric films
|Jun 30, 2005
|Jan 5, 2006
|Hiroshi Oyama
|Numerical controller which can call program described in script language
|Mar 15, 2012
|Oct 25, 2012
|Tokyo Electron Limited
|Film deposition method and film deposition apparatus
|Sep 8, 2008
|Jul 27, 2011
|Impurity control in hdp-cvd dep/etch/dep processes
|U.S. Classification
|International Classification
|Cooperative Classification
|European Classification
|Nov 12, 2004
Owner name: NOVELLUS SYSTEMS, INC., CALIFORNIA
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:BAYMAN, ATIYE;PAPASOULIOTIS, GEORGE D.;LING, YONG;AND OTHERS;REEL/FRAME:015376/0425;SIGNING DATES FROM 20041020 TO 20041103
|Dec 2, 2010
|Fee payment
Year of fee payment: 4
|Dec 2, 2010
|Surcharge for late payment
|Nov 17, 2014
|Fee payment
Year of fee payment: 8


text:
Editors' Note: CBS Interactive does not encourage or condone the illegal duplication or distribution of copyrighted content.
Publisher's Description+
Houlo Video Downloader lets you easily download video from over 200 websites such as YouTube, Vimeo, DailyMotion, VEVO, Nicovideo (Nico Nico Douga), FC2 Video, Twitch.tv, Ustream.tv, LiveStream, Veoh, FC2 SayMove, NoSub.tv, Himado.in, AniTube, LiveLeak, Blip.tv, Funny or Die, MetaCafe, AOL On, Fox News, NYTimes, HuffPost, WSJ, Forbes, Washington Post, Reuters, TIME, Bloomberg, The Guardian, Local.com, Fox Business, Morningstar, Investopedia, Bankrate, IBTimes, Financial Times, IGN, GameSpot, GameTrailers, eHow, About.com, SlideShare, Kickstarter, Photobucket, Cracked, Flickr, Vine.co, Break, Discovery, eBaumsWorld, Wimp, CollegeHumor, TeamCoco, Allrecipes, BabyCenter, CafeMom, Better Homes & Gardens, Health, Billboard, TMZ, IMDb, E Online, SoundCloud, Bandcamp, Faithit, GodTube, LittleThings, Crosswalk, Christianity, Adobe TV, CreativeBloq, BobVila, ThisOldHouse, WonderHowTo, Daum TV, Naver TV Cast, C-SPAN, TeacherTube, SchoolTube, Clipfish, Vube, Purevid, Vidzi, VodLocker and more, and convert them into almost every popular format instantly in one single place.
(1) Batch download videos from these sites and more with fast speed. Instantly transfer them to the format compatible with your portable device such as iPad, iPhone or Android phone, in a single place. (2) Download online videos with high-definition 1080p resolution. Easily build a top-quality collection of your favorite videos and play on your HDTV or home theater system with the best user experience. (3) Batch convert various types of video into the format (AVI, WMV, MPG, MP4, MKV, MOV, 3GP) suitable for your computer or mobile device with one-click. Fancy listening songs on-the-go? Convert your videos to MP3 is as simple as brewing a cup of coffee.
What's new in this version:
Version 3.84 is a bug fixing release.


text:
Category:Portuguese expatriates in Italy
From Wikipedia, the free encyclopedia
This category has the following 2 subcategories, out of 2 total.
- ► Ambassadors of Portugal to Italy (2 P)
Pages in category "Portuguese expatriates in Italy"
The following 72 pages are in this category, out of 72 total. This list may not reflect recent changes (learn more).


text:
On Friday 2 October, Polish President Andrzej Duda vetoed the Gender Accordance Act, to the dismay of activists in Poland and all over Europe. This was a prime opportunity for Poland to join their European counterparts, such as Malta and Ireland, who have improved gender recognition provisions in 2015. ILGA-Europe had previously urged President
- Select Slogan for the "Baltic Pride" 2016 March in Vilnius! (VOTING)
- Lithuanian transgender model Aistė: "All we really need is to feel accepted for who we are"
- European Parliament urges Lithuania to recognize same-sex unions
- "Freedom House": Lithuanian LGBT community remains discriminated
- LGL Appeals before the Strasbourg Human Rights Court
Select Slogan for the "Baltic Pride" 2016 March in Vilnius! (VOTING)
Lithuanian transgender model Aistė: "All we really need is to feel accepted for who we are"
European Parliament urges Lithuania to recognize same-sex unions
"Freedom House": Lithuanian LGBT community remains discriminated
LGL Appeals before the Strasbourg Human Rights Court
"What is Intersex?" This is the question the workshop of the 17th of September began with. Through Annemarie and Elena, the LGL dealt with the most hidden letter of the LGBTI* community: the "I". After a quick introduction of everyone the group delved into the evening's topic: "Myths and Facts" about intersex people. For a
The Vatican on Saturday sacked a gay priest after he came out as gay on the eve of a major meeting of bishops where the Church's stance on homosexuality is expected to be discussed. Monsignor Krzysztof Charamsa, a Polish theologian, had worked at the Congregation of the Doctrine of the Faith, the Vatican's doctrinal arm, since 2003. He
Hundreds of LGBT rights advocates from across Latin America and the Caribbean are expected to gather in Honduras this week for a conference designed to spur further participation in the political processes of their respective countries. Randy Berry, the special U.S. envoy to promote global LGBT rights, is among those who are scheduled to speak
The preparations for the "Baltic Pride" festival in Vilnius (Lithuania) in June, 2016 are already in the full swing. The members of the local LGBT* community and our supports and friends have submitted more than thirty (30) prospective slogans for the "Baltic Pride" 2016 festival. After careful consultations and consultations with our Estonian and Latvian
On 1 October 2015, we will celebrate the 25th annual UN International Day of Older Persons. Leading up to 1 October, ILGA-Europe will be running 'Silver Rainbow' – a social media campaign to highlight life experiences of older LGBTI people. What is Silver Rainbow? The campaign aims to raise awareness of the specific needs
The LGBT support group has gained even more members since its recent ban. Last week Russian media watchdog, Roskomnadzor, banned a number of LGBT groups registered on the country's most popular social network VKontakte. The media watchdog forced VK – the Russian version of Facebook – to officially ban the groups, which included Children
The court has provided protection for a man tricked into visiting the country by his parents. Shivy, 18, is technically an Indian citizen – but has been living in the USA for fifteen years. The court move comes after he alleged that his parents tried to forcibly marry him off to a man after tricking him
Jure Poglajen, a Slovenian dentist, and his partner of more than four years last month spent two weeks on the Greek island of Lesbos. The couple had gone to the town of Molyvos, which is on the island's northern coast, for what Poglajen described as a "normal vacation." The two men soon found themselves
Last week the United Nations convened its first meeting to address the issue of human rights violations against people with ambiguous genitalia, also known as intersex. The U.N. Office of the High Commissioner for Human Rights meeting, held in Geneva, builds off a 2013 report by the U.N.'s Special Rapporteur on Torture calling on the
September is not only the month of the first yellow leafs on trees and the beginning of school; September is the month of Bisexuality Visibility Day and Bi-Sexuality Awareness Week! Let's go a bit more in depth into the topic and discover more about these two very important events within the LGBT* agenda. What is
For the third time this year, police in the city of Nikšić, Montenegro, has banned a pride march. The Pride was banned quoting security threats. The Orthodox Church mobilised against the Pride, while nationalists and football hooligans had threatened to disturb the march. Earlier Pride marches in the capital city, Podgorica, and Budva, were well-protected


text:
By: blueomega
Japanese TV spot from the new DS game Final Fantasy Tactics:A2
Views: 862 | Posted: 05/25/2011
By: Zeric
Direct Feed of Final Fantasy Tactics A2: The Sealed Grimoire from TGS 2007.
Views: 519 | Posted: 05/25/2011
By: Butulino
From Square Enix for Nintendo Ds
Views: 843 | Posted: 05/25/2011
By: Nanogleak
Here's some *New* 11 minute gameplay footage of "Big Bird", from Square Enix's latest upcoming Nintendo DS title, Final Fantasy Tactics A2: The Sealed Grimoire. Enjoy..
Views: 1,202 | Posted: 05/25/2011
By: ViKING7
Official Final Fantasy Tactics A2: The Sealed Grimoire (DS) trailer from Tokyo Game Show 2007
Views: 4,580 | Posted: 05/25/2011
By: deltraeus
A home-made trailer showcasing some of the aspects of Final Fantasy Tactics A2. All video, sound, and trademarks are copywrights of their respective owners. None of the video was created by me. All video was created by Square Enix and was received on Gametrailers.com
Views: 415 | Posted: 11/21/2010
By: Zeric
Views: 2,615 | Posted: 08/01/2010
By: Zeric
World Map of Final Fantasy Tactics A2.
Views: 3,190 | Posted: 05/09/2010
By: Zeric
Final Fantasy Tactics A2 (DS) trailer from Square-Enix Party 2007.
Views: 58,009 | Posted: 04/10/2010
By: Butulino
Final Fantasy Tactics A2
Views: 1,239 | Posted: 03/12/2010
Week of
Oct. 04
Week of
Oct. 11
Release Date: 10/06/2015
A non-linear episodic game with 6 acts.
PS4, Xbox One, PC
Release Date: 10/07/2015
The 2015 edition is revealed.
Release Date: 10/09/2015
The Uncharted series is back and remastered for PlayStation 4.
PS4, Xbox One, PC, Xbox 360, PS3, 3DS
Release Date: 10/13/2015
The monsters of R.L. Stine's popular book series are back to haunt in game form.
PS4, Xbox One, PC
Release Date: 10/13/2015
Xbox One, PS4, PC
Release Date: 10/13/2015


text:
Publisher's Description+
FantasyDVD is an exquisite and powerful software DVD player with the same features and controls of the living-room DVD player and support for over 70 type video and audio media files. It support the ts, tp, trp mpeg2 HDTV, and wmv HDTV. Also support x264 format video file. FantasyDVD supports 2--7.1 channel audio output, Dolby ProLogic, Dolby ProLogicII, and SRS TruSurround XT audio output mode. Supports Low frequency effect (LFE), High frequency effect (HFE), 10 Band Equalizer, and EchoDelay expansion functions. Its advanced video and audio technologies deliver the highest quality viewing and listening experience possible on the PC.
Version 9.58 build 1010 is a bug fixing release.
What's new in this version:
Version 9.58 build 1010 is a bug fixing release.


text:
Download iQuarterback 2 Pocket Edition iPhone iPad iOS
"iQuarterback 2 is an excellent little football throwing game" - TUAW
Remove Ads is on sale!
iQuarterback 2 Pocket Edition lets you take your football career to a whole new level. Whether you're throwing footballs in the snow at moving targets or trying to power-up to achieve the highest score.
Click4more: Related apps iquarterback pocket edition
With the all new Fame, you will have more control over the outcome and look of the game than ever before. Unlock interesting items like mascot heads, snow balls and different environments, such as an air hockey table. Level up your quarterback in two different game play modes, Shoot Out or Accuracy, and see how you stack up against the best of the best.
Tags : iquarterback , edition , pocket , pocket edition
Battle between your friends through the Game Center achievements and high scores. An online connection is needed for achievements and high scores.
If you need to get our attention, email us at email@example.com
Visit us on www.facebook.com/iQuarterbackapp
If you are iPhone and iPad owner,you now can download iQuarterback 2 Pocket Edition for free from Apple Store. The application is supporting English language. It weighs in at only 16.3 MB to download. It is highly advisable to have the latest app version installed so that you don`t miss out on the fresh new features and improvements. The current app version 1.1 has been released on 2014-11-13. For ensuring consistency with the device you should take into account the following app compatibility information: Compatible with iPhone 3GS, iPhone 4, iPhone 4S, iPod touch (3rd generation), iPod touch (4th generation) and iPad.Requires iOS 4.2 or later.
Bottom Line: For more information about iQuarterback 2 Pocket Edition check developer FuzzyCube Software, LLC`s website : http://www.fuzzycubesoftware.com
iOS iQuarterback 2 Pocket Edition 1.1 Mobile
Customer Reviews
It`s ok
If it wasn`t free my score would`ve been lower. There are only 2 modes and one of them is way too easy to be fun. Unless you love leaderboards, this game will last about 15 minutes.
Miss the old throwing system
I`m a huge fan of I qB 1 and I guess I`ll still to I QB 1. The old throwing system is so much better. This new one you just point at the target. So easy. No challenge.
5 stars
Fantastic game. Especially for free
Related - Games - iQuarterback 2 Pocket Edition 1.1
More in Games - for iQuarterback 2 Pocket Edition iPhone
More by FuzzyCube Software, LLC - for iQuarterback 2 Pocket Edition app ioS


text:
All Android applications categories
All Android games categories
Garden Design Ideas
Garden design ideas for you. You can save and share all garden designs...
Similar app: Garden Design Ideas
Free | 3.7K
Garden Manager : Plant Alarm
'Garden Manager' app is an essential gardening tool. Save time...
Similar app: Kitchen Garden Planner
Free | 1.3K
Garden Plants Growing Guide
The Garden Plants Growing Guide app provides gardening information on...
Similar app: Mr Fothergills Planting Guide
Free | 211
Koubachi helps you care for your precious plants. Koubachi notifies yo...
Similar app: Chesapeake Native Plants
Free | 132
Landscape & Garden Calculators
41 Landscaping and Garden Calculators US and Metric Featured by Vodaf...
Similar app: Brick-Block Calc Pro Select
$3.99 | 77
OG Planting Planner
Take the guesswork out of planting a garden. The Planting Planner lets...
Similar app: iGarden USA Gardening Helper
Free | 74
Garden Squared
Start planning your garden now! This app assists in planning and track...
Similar app: Garden Time (Trial)
Free | 150
Master Gardener Pocket Guide
Learn 675+ gardening and horticulture terms by quiz, dictionary, &...
Similar app: Respiratory Therapist Prep
$1.39 $1.49 | 12
plant care, horticulture, olive garden, year planner, plant guide, bed bugs, calibre library, garden squared, avg pro, picket, asphalt 8


text:
Department of Computer Science and Statistics
Why study Computer Science at URI?
Computer science is a vibrant and rapidly changing discipline. Whether you are interested in web development, creating the next new app, or developing the next new high performance machine-learning algorithm to analyze the oceans of data needed to secure the nation, cure diseases, develop vaccines, or model climate change, this is the discipline for you.
Our Undergraduate curricula are aligned with the ACM & IEEE 2013 Curriculum Guidelines, and provide the core problem solving expertise needed in diverse industrial settings and prepare students for the lifelong learning skills needed in our modern fast-paced and rapidly evolving discipline. Our Graduate curricula provide the expertise needed for a career of research-based innovation.
We conduct leading-edge research in bioinformatics, machine learning and data-mining, real-time distributed objects, sensor networks, digital forensics, and interactive 3D graphics with dedicated faculty members experienced in teaching with strong research experience in traditional and emerging areas of computer science and statistics.
Also, students majoring in Computer Science at URI have the opportunity to participate in the International Computer Science Program (ICSP), an adjunct to the University's well-known and successful International Engineering Program (IEP). To learn more click here.
For more information, read the letter from the Computer Science Department Chair to prospective students here.
To read interviews with graduated Computer Science students, please check this link – "Making It Real".
Programming Language Boot Camp
Taking CSC402/CSC301 or are interested in programming language topics? Check out the Programming Language Boot Camp hosted by Dr. Hamel.
Cybersecurity & Privacy Colloquium (2014)
Our dependence on modern technology is not without its downsides. Cyber threats pose serious economic and national security challenges. Moreover, corporations and government agencies track our online activities, purchases, and even our location.
Undergraduate Concentrations
Our undergraduate degree program offers four tracks or areas of emphasis to guide students in selecting courses:
Undergraduate Minors
- Digital Forensics
- Cyber Security
- Computer Science (for non Computer Science Majors)
- Click here for the minor forms


text:
Joined: 11 April 2010
Posts: 14870
When life gives you everything you ever wanted and everything turns out to be not as you expected.
Will it be worth taking an
The following 50 member(s) liked the above post:
03rac08, amandasookoo, Jadeluvkm, J12L85, gmhatcher, keerthus.9, Sunrio80, Piie, sanj1905, RuchiArora21, MissUArYa, NandiniRaizadaa, mjht_admirer, disha_rajdev, ksen, Popo., billieberry, prettyji, KS1000, Leevi05, nan0102, sara1990, luv_lvndr, nirmalac99, rozie, MissPurpleFreak, ashGC_arja, Tahitien-moon, Awari_Maan, rutu83, jayshu17, MSN_Vanny, RA17, ..Mini.., kratzyfan, VincyAnne, quirky_senorita, roserosey, IsYaRoCHeR, .Tanmaya., KrantiGuru_JKR, gcluv, maha9, PoohLover, shalini28, leenuguru, gafulu14, taahir004, Surish, CrazyEyes,
Joined: 11 April 2010
Posts: 14870
Yash & Aarti were from different village, but went to same colllege. They were best friend in college. There strong friendship bloom into unexplainable relationship as they fell in love with each other. They vow to marry each other when the right time comes, and will be together for the rest of their life.
Aarti always love all the latest things & have big dreams. Yash was exactly like her. Together, their college friends always said "they are meant to be". No one from there family knew about there relationship only for Yash younger brother Pratiek, in fact they didn't know each other family.
Yash then leave college to go away from where he was living as his family decided to move. But Yash & Aarti never stop talk to each other, they somehow always find the time communicates, then all of a sudden everything stopped.
Yash returns after 3 years, after finishing his studies and helping his dad in their own construction industry to look for Aarti but never found her. Only to get the biggest shock of his life, Aarti has got married! He then return back to the city and move on also.
... ... ... ... ... ...
Call it Fate, Destiny, Coincidence, or just Luck.
Something played a wicked game and bought Yash & Aarti after 7 years face to face with eah other.
The following 50 member(s) liked the above post:
03rac08, gurmeet-fan, RuchiArora21, amandasookoo, Jadeluvkm, Sunrio80, Piie, sanj1905, J12L85, gmhatcher, elanpremi, NandiniRaizadaa, Mula, ksen, Popo., padmavar, luv_lvndr, nirmalac99, ashGC_arja, rozie, sara1990, Leevi05, nan0102, KS1000, MissPurpleFreak, Kittya_Cullen, Awari_Maan, rutu83, jayshu17, saf24, Tahitien-moon, ..Comrade4eva.., RA17, ..Mini.., VincyAnne, MSN_Vanny, lulujjjj, KrantiGuru_JKR, leenuguru, IsYaRoCHeR, maha9, shalini28, gcluv, shah10, SilverBell, pickachu, gafulu14, taahir004, CrazyEyes, Surish,
Joined: 11 April 2010
Posts: 14870
Yash Raj Scindia - The Scindia's family second son. Yash is 26 yr old , He is his mother's pet. Yash is married to Arpita, who is assume to be death. Yash works with his dad in the Scindia Family Industry (SF Industries)
Aarti Khanna/Dubey – The only daughter of the Dubey's Family and the Khanna's Family only daughter in law. She is married to Prashant who divorce now she lives at her parents house with her son Ansh. Aarti is 25 yrs of age, she is a clam, respectable, mannerly and fun loving person.
Arpita Yash Raj Scinida – The Scindia's family second daughter in law. Arpita & Yash marriage was a Arrange marriage. Arpita always loved someone else but was forced on Yash. She always hated him, and can never understand him. She however left him. After which she was said to be death.
Prashant Khanna – Khanna's family only son. Married to Aarti but divorce her. He has one son Ansh. He is having an affair with Aarti's best friend Mansi.
Scindia's Family
Pratap & Gayatri Scindia _ Owner Of SF Industires
4 children: Pankaj, Yash, Pratiek & Pooja.
Two daughters in law, Vidhi & Arpita (who is death).
Dubey's Family
Shohba & Suraj Dubey
2 Children: Aarti & Rohan
Ex son in law, Prashant
The following 47 member(s) liked the above post:
03rac08, jhansikiraniiii, amandasookoo, Jadeluvkm, sanj1905, J12L85, gmhatcher, keerthus.9, Sunrio80, Piie, JanakiSatish, NandiniRaizadaa, Mula, ksen, rozie, Leevi05, nan0102, KS1000, sara1990, luv_lvndr, nirmalac99, Kittya_Cullen, MissPurpleFreak, ashGC_arja, Awari_Maan, rutu83, Tahitien-moon, jayshu17, saf24, RA17, ..Mini.., MSN_Vanny, lulujjjj, VincyAnne, KrantiGuru_JKR, leenuguru, IsYaRoCHeR, maha9, gcluv, shalini28, shah10, pickachu, gafulu14, Paro_rudra, taahir004, CrazyEyes, Surish,
Joined: 11 April 2010
Posts: 14870
The following 61 member(s) liked the above post:
ap14, 03rac08, shalu0310, sheila_02, gurmeet-fan, cynthiagem, maneet-laksh, chella1991, keerthus.9, Sunrio80, Piie, elanpremi, J12L85, ketki61, *Sohana*Singh*, JanakiSatish, darrish, RuchiArora21, Simple_beauty, amandasookoo, NandiniRaizadaa, Mula, tharuma, Popo., disha_rajdev, billieberry, sara1990, nan0102, KS1000, nirmalac99, Strawbella, luv_lvndr, ksfan2, rozie, MissPurpleFreak, Kittya_Cullen, rutu83, jayshu17, saf24, Tahitien-moon, akui1984, ..Comrade4eva.., RA17, MSN_Vanny, lulujjjj, VincyAnne, Kesha_H., KrantiGuru_JKR, IsYaRoCHeR, roserosey, gcluv, PuvZ, maha9, shalini28, caller123, SilverBell, pickachu, gafulu14, taahir004, Paro_rudra, Surish,
Joined: 11 April 2010
Posts: 14870
Table Of Content
The following 17 member(s) liked the above post:
maneet-laksh, MissUArYa, billieberry, disha_rajdev, rozie, nan0102, MissPurpleFreak, sara1990, RA17, Awari_Maan, MSN_Vanny, IsYaRoCHeR, KrantiGuru_JKR, shalini28, maha9, gafulu14, taahir004,
Joined: 02 December 2012
Posts: 2682
The following 6 member(s) liked the above post:
RuchiArora21, Mula, rozie, -Anarkali., gafulu14, Surish,
Joined: 02 December 2012
Posts: 2682
The following 4 member(s) liked the above post:
prettyji, -Anarkali., gafulu14, Surish,
Joined: 11 April 2010
Posts: 14870
The following 2 member(s) liked the above post:
gafulu14, Surish,
The popular actor Gurmeet Choudhary now all set to return to ...
Jhalak Dikhlaa Jaa over the years has become the official Visa for TV ...
Disclaimer: All Logos and Pictures of various Channels, Shows, Artistes, Media Houses, Companies, Brands etc. belong to their respective owners, and are used to merely visually identify the Channels, Shows, Companies, Brands, etc. to the viewer. Incase of any issue please contact the webmaster.
Popular Channels :Star Plus | Zee TV | Sony TV | Colors TV | SAB TV | Life OK
Quick Links :Top 100 TV Celebrities | Top 100 Bollywood Celebs | About Us | Contact Us | Advertise | Forum Index