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[caption id="attachment_16732" align="alignleft" width="145"] Adjusting To Synthroid, Raja Bell[/caption]
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text:
RANCHO CORDOVA, Calif., Jan. 4, 2012 /PRNewswire/ -- ThermoGenesis Corp. (NASDAQ: KOOL), a leading supplier of innovative products and services that process and store adult stem cells, said today that India's Ministry of Health has approved the AutoXpress® System (AXP), enabling the Company to initiate commercial sales of the product in India. The AXP is used for the processing of stem cells from cord blood.
"We are pleased to have achieved registration for the AXP in India and will be working closely with Fenwal, Inc., our AXP distributor in the market, to begin the commercial launch of the device," said J. Melville Engle, Chairman and Chief Executive Officer of ThermoGenesis.
"The AXP represents advanced stem cell technology and India is one of the largest and fastest-growing markets in the world," said Vikram Karnani, vice president, Therapeutics, for Fenwal. We look forward to working with ThermoGenesis to introduce this important technology to physicians in India."
Engle noted that the AXP approval in India comes as the Company awaits approval of the product in China. "As we announced in October, the submission has been accepted by the Chinese Food & Drug Administration (SFDA), which represents successful completion of product testing and the administrative acceptance of the submission. The final professional review is now in process and we are hopeful that the AXP will receive regulatory approval in China in early 2012."
About ThermoGenesis Corp.
ThermoGenesis Corp. (www.thermogenesis.com) is a leader in developing and manufacturing automated blood processing systems and disposable products that enable the manufacture, preservation and delivery of cell and tissue therapy products. These include:
|SOURCE ThermoGenesis Corp.
Copyright©2010 PR Newswire.
All rights reserved

subset: commoncrawl


text:
Big Agnes Hog Park 20° Sleeping Bag - Long, Right ZipItem #: BHPLR11
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text:
Girl, 13, Suspended for Bringing Butter Knife to Cut Fruit at Lunch
A butter knife is causing some major controversy in Attleboro, Massachusetts.
Yes, a butter knife.
A butter knife is causing some major controversy in Attleboro, Massachusetts.
Yes, a butter knife.
If you want to find exactly where Americans are doing best, pack up and head to the Midwest.
There are about a million reasons why Jennifer Maldonado has the best coworkers in the world.
On Tuesday, the Supreme Court heard oral arguments in Hollingsworth v. Perry, the case that is challenging the constitutionality of California's Proposition 8, which banned same-sex marriage. It is the first of two gay-marriage-related cases the court will hear this week; on Wednesday it will hear arguments in United States v. Windsor, a challenge to the constitutionality of the federal Defense of Marriage Act (DOMA).
The economy is getting so tough one store is actually charging customers who don't buy anything.
It's not easy being unemployed or under-employed, but you are definitely not alone. Even with a highly positive new jobs report just out and the country apparently on an upswing, an unemployment rate of 7.7 percent means a lot of people still need jobs.
But that doesn't mean the situation is hopeless for anyone. If you're spent on looking for available jobs in your current locale because it seems like the well has dried, you could be right. Some states have higher unemployment rates than others, and you could be stuck living somewhere that's not helping you. It might be time to relocate.
The long national nightmare is over.
Twinkies are coming back!
A shootout that ended in a car crash engulfed in flames on the Las Vegas strip closed down the main road where the incident left a cab driver, a passenger in the cab and a rapper dead, and four other people injured.
Everything is indeed a little bit bigger in Texas. Including wallets, apparently.
Riding the wave of his re-election, President Barack Obama hit upon themes of the economy, energy, climate change and gun control in his State of the Union address delivered to a joint session of Congress.
Starting this summer, you won't be getting any mail over the weekend.
The nearly week long hostage situation in Alabama involving a five-year-old boy has finally come to an end.


text:
- Andachtsorte
- das königliche Projekt, Forschungszentren
- Educational places
- Einkaufen
- Freizeit & Unterhaltung
- Kunst, Kultur & Erbe
- Spa- & Wellnesszentren
- Städtisches Leben
- Thailändische Natur & Tierwelt
- Weingüter & Brauereien
BangkokOperating day:
DailyOperating time: 24 Hour
Contact Details
- -
Amphoe Samphanthawong, Bangkok
Kategorie : Local Market
Attraction Details :
Also known as the Little India in Bangkok, Phahurat is the largest Sikh community in Bangkok, located right next to the Chinese community of Yaowarat. Named after a daughter of King Rama V, the area is regarded as one of Bangkok's largest textile market you find everything involved in cloth making, from yarns of silk to costume jewelries to faux fur as well fabrics in various styles from Thai silk to Indian saris. Hidden behind the market is the sparkling gold dome atop a giant structure of Gurdwara, the largest Sikh temple in Thailand. (Learn more about Gurdwara at www.thaisikh.org/sikhism/gurdwarabangkok.php)
Getting there: Bus no. 7,25,40, 53, 56, 507
The closest destination to this result :
See & Do in Bangkok :


text:
Clacton on Sea to hold Naked Bike Ride today: as MP says ride they failed to close down is "offensive exhibitionism"
Council, MP and police tried to have nudist ride stopped but it's running TODAY
An MP has slammed today's Naked Bike Ride in Clacton as "offensive exhibitionism".
Douglas Carswell MP says he would like to prevent the ride from taking place in the future, as cyclists prepare to set off from the Toby Carvery, in Marine Parade West, at 2pm today.
The ride is supposed to be an "environmental protest against car culture and a celebration of the bicycle and the body", and was held for the first time in Clacton last year.
Mr Carswell has written to the police, who say that although they would like it to be cancelled, they would not be able to stop the ride as it is not illegal. Tendring Council has also asked for it to be cancelled.
Mr Carswell told the Clacton and Frinton Gazette: "There is a legitimate right of protest in this country, but this nude cycle ride is, in my view, just exhibitionism."
This year's route takes the ride away from the town centre and the council has published it to ensure that the public can avoid the naked riders.
Last year we reported how Clacton on Sea tried to ban nudist events after World Naked Bike Ride.
Peter Halliday, Leader of Tendring District Council, reckoned enough was enough after two months that saw residents strip off for both the protest ride as well as a skinny dip on behalf of Marie Curie Cancer Care.
Last year, around 35 naked cyclists participated in a 17-kilometre protest ride around the town.
Mr Halliday said: "Clacton is a traditional family seaside resort and in my opinion people riding around on bikes with no clothes on does nothing to enhance our image – in fact it harms it," he said.
"They did not apply to use land under our responsibility so there was little we could do other than work with other agencies on a bit of a damage limitation exercise
"However, I now want to get together with the Police and others round the table and come up with a plan to put a halt to naked events in our area before it all goes too far."
Essex Police however said: "There has been precedent from similar events held in Brighton and London in the past and it was deemed that there were no legal grounds to prevent it going ahead."
Robert Brown, who organised the Clacton event in a series of World Naked Bike Rides, said that the councillors were missing the point of the rides.
He said: "The event was to protest against car culture and the idea of riding naked is to highlight the vulnerability of cyclists. Being naked in public isn't an offence in itself.
"Similar events are held in towns and cities around the world and across the UK in places like Brighton, Portsmouth and London. The London event attracts thousands of people and benefits shops and traders in the area.
"There were more people in favour of our event than against it. On Saturday we were given a huge cheer as we rode down the High Street."
Whilst I instinctively object to NIMBYs stopping anyone doing anything... I know Clacton. It's a small coastal town full of retired folk and Essex people in their static caravans. It's hardly a hotbed of decision-makers and opinion-formers.
So while I see nothing wrong with holding 'a WNBR' there or anywhere else, if the ride was truly protesting surely it would make more sense to hold it somewhere more... important?
Boardman CX Team '14 | Cannondale CAAD8 '12 (written off, SMIDSY) | Scott Sportster '08
posted by Gizmo_ [1248 posts]
19th July 2014 - 13:41
Whilst I instinctively object to NIMBYs stopping anyone doing anything... I know Clacton. It's a small coastal town full of retired folk and Essex people in their static caravans. It's hardly a hotbed of decision-makers and opinion-formers.
So while I see nothing wrong with holding 'a WNBR' there or anywhere else, if the ride was truly protesting surely it would make more sense to hold it somewhere more... important?
Judging from the 'List of Rides' section of the website (http://wiki.worldnakedbikeride.org/index.php?title=List_of_rides#United_... - Link perfectly safe for work), there appear to be quite a number of them going on in the UK.
Having a ride in Clacton doesn't appear to come at the cost of having one anywhere else. And I think these things are largely locally organised, so if people in Clacton got themselves organised and people in 'more important' towns didn't then... well, I guess that's just way the cookie crumbled (sorry, I hate that expression).
If you're interested, the London one is planned for the 14th of June. That should raise a few more eyebrows.
posted by Quince [378 posts]
19th July 2014 - 14:03
This MP must be easily shocked if he has never seen a few naked humans. Underneath my clothes, I am naked all the time!
posted by bikeboy76 [1813 posts]
19th July 2014 - 16:31
Personally I find MPs who've cheated taxpayers through fiddling their expenses far more offensive Mr Douglas Carswell MP.
posted by don simon [586 posts]
19th July 2014 - 19:40
Is there an election soon, all these MPs canvassing votes with empty promises?
posted by Yorkshie Whippet [487 posts]
19th July 2014 - 23:12
Underneath my clothes, I am naked all the time!
posted by nowasps [352 posts]
20th July 2014 - 8:11
So naked people riding bicycles is deemed offensive, but old people driving around in diesel cars causing the premature deaths through pollution is perfectly fine?
I wonder, what part of the human body does he think is offensive? Someone bending over and curling one out is pretty offensive, I agree, but a sweaty testicle sliding down the side of a saddle isn't quite in the same ballpark.
posted by Peowpeowpeowlasers [258 posts]
20th July 2014 - 13:12
I note from Mr Carswell's Wikipedia entry that he is apparently a libertarian.
A rather selective libertarian, it would appear...
posted by guydfletcher [1 posts]
20th July 2014 - 14:28
"It's now very common to hear people say, 'I'm rather offended by that.' As if that gives them certain rights. It's actually nothing more... than a whine. 'I find that offensive.' It has no meaning; it has no purpose; it has no reason to be respected as a phrase. 'I am offended by that.' Well, so fucking what."
- Stephen Fry
posted by SamSkjord [39 posts]
21st July 2014 - 8:49
I'm offended by Douglas Carswell but that's no reason to ban him. It's entirely my problem.
If he's offended by nudity then he should have a look at the well publicised route and simply keep away. Same goes for any other prudes.
posted by ollieclark [19 posts]
21st July 2014 - 15:48
So did the ride go ahead? How many people were there, and in what stage of undress (I believe that the WNBR says you can go "as bare as you dare", which rather leads to some possible WNBR/Tweed Run crossovers, if someone was sufficiently inhibited).
Personally, I wouldn't. But that's my choice.
Like bikeboy says, we're all naked under our clothes...
posted by brooksby [512 posts]
21st July 2014 - 16:17


text:
Xosview Changelog
New in version 1.15August 2nd, 2013
- This version re-introduces background pixmaps, adds Hurd support, and contains bug and performance fixes.
New in version 1.14 (April 1st, 2013)
- This version makes small fixes, including one for a bug that could cause random crashes.
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New in version 1.11 (October 12th, 2012)
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New in version 1.10 (September 25th, 2012)
- This version adds a new configurable (and simplified) CPU meter, plus several Linux and BSD improvements.
New in version 1.9.4 (August 25th, 2012)
- This version improves temperature sensor displays and BSD support, and fixes bugs.


text:
'Booth girls' dazzle crowd at Auto Expo 2014's BMW Pavilion
The entire look of the BMW Pavilion at Auto Expo 2014 was completely sporty and futuristic, whether it was the iridescent lighting or the booth girls dressed in shades of blue and white.
Rod Anker, Creative Director of Monsoon Salon and Spa, said that they have given the booth girls at BMW a very sleek runway look, that is based on a neutral look, but in times when overkill is not in, this is what stands out, just like the fleet from the BMW stable.
Luxury carmaker BMW India have unveiled four cars at the Auto Expo, which was launched by master blaster Sachin Tendulkar.
(Posted on 11-02-2014)
Free Yearly Horoscope: Select your zodiac sign
Pisces | Aquarius | Capricorn | Sagittarius | Scorpio | Libra | Virgo | Leo | Cancer | Gemini | Taurus | Aries


text:
Get the free bop.fm iOS app!
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Landing on a runway in Chicago and I'm grounding all my dreams of ever really seeing California, because I know what's in between is something sensual in such non-conventional ways.
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text:
Resolution: standard / high
Figure 3.
Chromosome 22q12.2 deletions reveal loss of MN1 in six patients with facial dysmorphism and/or cleft palate and/or abnormal cranium. Schema of the deletions on chromosome 22q12.2 in the eight patients described in the text and Table 1. Black bars depict the six patients with abnormal cranium and/or facial dysmorphism, and/or cleft palate. pX and TC were too young to determine whether they manifest clinical NF2. Gray bars depict the two patients without these abnormalities but with NF2. Dashed black line indicates the approximated proximal deletion in patient p41. Genes: NF2-purple, TTC28-green, PITPNB-orange, MN1-blue. Translucent vertical bars align the location of the deleted genes in relation to the chromosomal deletion found in each patient.
Davidson et al. BMC Medical Genetics 2012 13:19 doi:10.1186/1471-2350-13-19


text:
Among white children 19 months to 35 months old, 77 percent received a complete vaccination series, compared with 73.9 percent of black children, Wharton said.
"The Vaccines for Children Program has done a lot over the long run to address the much more marked disparities we used to see back in the 1980s," she said. "But we clearly need to focus on disparity issues."
And greater attention must be paid to teens, Wharton said, noting that the Healthy People 2010 vaccination goals for children 13 to 17 have yet to be met. This is especially true for the vaccines for diphtheria, tetanus, pertussis and chicken pox.
In 2006, teen vaccination coverage was about 80 percent for the new hepatitis B vaccine as well as the vaccine for measles, mumps and rubella. But about 60 percent of teens had gotten the tetanus-diphtheria vaccine or the tetanus-diphtheria-pertussis vaccine, or the varicella vaccine.
Specifically, coverage was 11 percent for the tetanus-diphtheria-pertussis vaccine and 12 percent for the new meningococcal conjugate vaccine, which protects against bacterial meningitis.
Data for the new human papillomavirus (HPV) vaccine, which prevents cervical cancer, were not available for the survey. However, according to Merck & Co., the manufacturer of the vaccine, 7.5 million doses had been distributed in the United States as of June, Wharton said.
"Clearly, we need to get more information to parents and health-care providers and make sure everyone has a good understanding of the recommendations and the health benefits of these vaccines," Wharton said. "It is going to take a lot of work to get the level of coverage among adolescents that we currently have for children," she said.
Dr. David Katz, director of Yale University School of Medicine's Prevention Research Center, said, "Immunization is on the short list of crowning achievement
|Copyright©2007 ScoutNews,LLC.
All rights reserved


text:
- Filed Under
Bob Faenger
Re: "Swim at your own risk," Aug 4: My take on the problem is as a retired engineer.
As long as the commercial "life preserver" you show and the one they sell, looks as ugly and is as cumbersome as it is, very few people and kids are going to use them. This is the problem.
I realize it is the most economical, but that isn't going to cut the loss of life. The people who need one need to wear one!
The commercial "ski jacket" that goes around the top torso is close to fulfilling the need. It's lightweight, sleek-looking - all the good things - but more expensive. Personally, I have used the "ski belt" that just goes around the waist whenever on a boat or out skiing. It's cheaper, out of your way, and you can swim with one on.
Now, do these ski items pass the supreme test of the commercial life preservers? Probably not, since the "life preserver industry" keeps selling the ugly model.
Designers of the world, it's time to come up with a better life preserver that people will wear when casually swimming.


text:
|Publication number
|Publication type
|Application number
|Publication date
|Jun 23, 1998
|Filing date
|Oct 8, 1996
|Priority date
|Oct 8, 1996
|Fee status
|Also published as
|Publication number
|Daniel Kadosh, Mark I. Garnder, Jon D. Cheek
|Original Assignee
|Advanced Micro Devices, Inc.
|Export Citation
|BiBTeX, EndNote, RefMan
|Patent Citations (3), Referenced by (15), Classifications (20), Legal Events (6)
|External Links: USPTO, USPTO Assignment, Espacenet
1. Field of the Invention
This invention relates to integrated circuit manufacture and more particularly to multi-level transistor fabrication and high performance interconnect arranged therebetween.
2. Description of the Relevant Art
The structure and the various components, or features, of a metal oxide semiconductor ("MOS") are generally well known. A MOS transistor typically comprises a substrate material onto which a patterned gate conductor is formed. The gate conductor serves to self-align impurities forwarded into the substrate on opposite sides of the gate conductor. The impurities placed into the substrate define a junction region, also known as source/drain regions. The gate conductor is patterned from a layer of polysilicon using various lithography techniques.
A typical n-channel MOS transistor employs n-type junctions placed into a p-type substrate. Conversely, a typical p-channel MOS transistor comprises p-type junctions placed into an n-type substrate. The substrate can extend entirely across a monolithic silicon wafer or can be classified as a "well" which extends only across a portion of the wafer. Thus, the term substrate is used liberally henceforth and is defined to include either the entire wafer area or only a portion of the wafer, to interchangeably encompass the term well. The substrate (or well) is doped with an impurity type opposite the junction areas formed therein.
A pervasive trend in modern integrated circuit manufacture is to produce transistors having feature sizes as small as possible. To achieve a high density integrated circuit, features such as the gate conductor, source/drain junctions, and interconnect to the junctions must be as small as possible. Many modern day processes employ features which have less than 1.0 μm critical dimension. As feature size decreases, the resulting transistor as well as the interconnect between transistors also decreases. Smaller transistors allows more transistors to be placed on a single monolithic substrate, thereby allowing relatively large circuit systems to be incorporated on a single, relatively small die area.
The benefits of high density circuits can only be realized if advanced processing techniques are used. For example, semiconductor process engineers and researchers often study the benefits of electron beam lithography and x-ray lithography to achieve the lower resolutions needed for submicron features. To some extent wet etch has given way to a more advanced anisotropic (dry etch) technique. Further, silicides and polycides have replaced higher resistivity contact structures mostly due to the lower resistivity needed when a smaller contact area is encountered.
There are many numerous other techniques used to achieve a higher density circuit, however, these techniques as well as others still must contend with problems resulting from higher density itself. Even the most advanced processing techniques cannot in all instances offset the problems associated with small features or features arranged extremely close to one another. For example, as the channel length decreases, short channel effects ("SCE") generally occur. SCE cause threshold voltage skews at the channel edges as well as excessive subthreshold currents (e.g., punch through and drain-induced barrier lowering). Related to SCE is the problem of hot carrier injection ("HCI"). As the channel shortens and the supply voltage remains constant, the electric field across the drain-to-channel junction becomes excessive. Excessive electric field can give rise to so called hot carriers and the injection of those carriers into the gate oxide which resides between the substrate (or well) and the overlying gate conductor. Injection of hot carriers should be avoided since those carriers can become trapped and skew the turn-on voltage of the ensuing transistor.
It appears as though even the most advanced processing techniques cannot avoid in all instances the problems which arise as a result of high density fabrication. As features are shrunk and are drawn closer together across a single topological surface, the closeness of those features causes numerous problems even under the most advanced processing conditions. It therefore appears that there may be a certain limitation beyond which feature sizes cannot be reduced if those features are to reside on the single elevational level. It would therefor be desirable to derive a processing technique which can produce features on more than one level. That is, it would be beneficial that this multi-level processing technique produce both active (transistors) and passive (capacitors and resistors) in three dimensions so as to enhance the overall circuit density without incurring harmful side effects associated with feature shrinkage and closeness.
In order to form transistors on separate elevation levels, careful attention must be paid to the interconnection between transistors on those levels. Therefore, it is desirable to derive an interconnect scheme which can connect one or more features on one elevation (topological) level to one or more features on another level. That interconnection must be made as short as possible in order to avoid voltage discrepancies between the features being connected. Of particular importance is the need to minimize voltage differential as seen by the channel region of a lower level transistor and the channel region of an upper level transistor. It is therefore imperative that a low resistance contact be made between transistor channels on separate elevation levels. A process which forms a multi-level transistor must therefore produce, during the process sequence, low resistance interconnect between channel regions arranged on separate elevation levels for the purpose of maintaining consistence operation among those transistors. If resistance between wells is too high, then one transistor may turn on or off prematurely relative to the other--an outcome which should be avoided if high performance circuit operation is desired.
The problems outlined above are in large part solved by a multi-level transistor fabrication technique. The present technique can produce one or more active and passive devices on a first level, followed by one or more active and passive devices on a second level. The first level is substantially planar and extends across an entire wafer surface. The second level is also substantially planar and parallel to the first level, but spaced by a dielectric therefrom.
An active device formed on the first level is termed a first level transistor, or more simply a first transistor. Similarly, an active device formed on the second level is termed a second level transistor, or second transistor. The first transistor is formed within and upon a first level substrate, or first substrate. A second level substrate (or second substrate) accommodates the second transistor and is spaced above the first level substrate by an interlevel dielectric. According to one embodiment, the first level substrate comprises a similarly doped implant area. This implant area is termed a well-connect implant. Being doped the same as but with higher concentration than the first level substrate, the well-connect implant is electrically connected with the first level substrate. The second level substrate comprises a region of polysilicon material into which and upon which the second transistor is formed. The second level substrate is doped with an impurity of the same type as that used in the first level substrate and the well-connect implant. The well-connect implant is spaced a lateral distance from the first transistor within the first level substrate. The first level substrate which encompasses the first transistor junctions and the well-connect implant may interchangeably be called a well. It is recognized that the second level substrate can also be interchangeably called a well. Regardless of the nomenclature use, a substrate (or well) defined herein is one having a well-connect implant at the first topological level and a polysilicon-based material at the second topological level.
The second transistor is spaced directly above the well-connect implant. Specifically, the second level substrate of the second transistor is spaced directly above the well-connect implant. A via extends along a vertical axis directly between the second level substrate and the well-connect implant. Accordingly, the via is conductive and made as short as possible so as to minimize voltage discrepancy between the first and second level substrates (i.e., between the first and second transistor channels).
As a result of the direct path taken by the conductive via, low resistance and therefore minimum voltage disparity exits between upper and lower substrate/well regions. Direct via routing is achieved by aligning the second transistor a spaced distance above yet laterally offset from the first transistor. The conductive via is of predefined width and extends from the bottom surface of the second transistor substrate along an axis defined as perpendicular to the planes in which the first and second level transistors are placed. That axis is preferably vertical and relatively short as defined by the thickness of the interlevel dielectric which separates those planes.
Broadly speaking, the present invention contemplates a method for interconnecting a well region of a first transistor to a well region of a second transistor. The well region of the first transistor is defined within the first level substrate, and the well region of the second transistor is defined within the second level substrate. A process is therefore presented for forming connection between the first transistor substrate and the second transistor substrate. Thus, the first transistor substrate encompasses a well-connect implant, a source region and a drain region. The source and drain regions are spaced from one another about a channel region of the first transistor. A first dielectric (i.e., first interlevel dielectric) is deposited across the first transistor as well as the topography lateral to the first transistor. An opening is then etched through the first dielectric to the well-connect implant. The opening is then filled with a metal, and a second level substrate is deposited entirely across the first dielectric and metal upper surfaces. The second level substrate is then removed in all regions except for the area directly above the metal and a contiguous area laterally spaced therefrom. The removed regions of second level substrate are then filled with a second dielectric. The second dielectric can, however, be formed either before or during formation of a second transistor. The second transistor is formed by forwarding dopants and depositing films into and upon the retained second level substrate to render the second substrate into the second transistor.
The present invention further contemplates an integrated circuit. The integrated circuit comprises an interconnect routed between the well-connect implant of the first transistor and the second transistor substrate. The interconnect comprises a conductive via extending along a vertical axis between opposed upper and lower via portions. A lowermost surface of the lower portion is configured to abut against the well-connect implant arranged within a first substrate. An uppermost surface of the upper portion is configured to abut against a second substrate which resides a dielectric distance above the first substrate. A second transistor is configured entirely within the second substrate.
Preferably, the first substrate into which the well-connect implant and source/drain implants of the first transistor are formed comprises a silicon-based material. The silicon-based material is coated with an oxide of relatively uniform thickness. The oxide thereby serves as a gate oxide for the first transistor. Similarly, a uniform thickness oxide is formed upon the polysilicon which forms the second substrate. That oxide upon the second substrate serves as a gate oxide for the second transistor. The metal used to fill the opening to form the interconnect via between the second transistor substrate and the first transistor substrate is either titanium, tungsten, titanium nitride or aluminum (i.e., Ti, W, TiN or Al), or a combination of these metals.
Other objects and advantages of the invention will become apparent upon reading the following detailed description and upon reference to the accompanying drawings in which:
FIG. 1 is a partial cross-sectional view of a semiconductor substrate having a gate conductor patterned upon the substrate according to an initial processing step of the present invention;
FIG. 2 is a partial cross-sectional view of the semiconductor substrate having implant regions placed within the substrate to form a first transistor with a well-connect implant spaced from the transistor according to a processing step subsequent to FIG. 1;
FIG. 3 is a partial cross-sectional view of the semiconductor substrate having a first dielectric layer deposited across the first transistor according to a processing step subsequent to FIG. 2;
FIG. 4 is a partial cross-sectional view of the semiconductor substrate having an opening formed through the first dielectric to the well-connect implant according to a processing step subsequent to FIG. 3;
FIG. 5 is a partial cross-sectional view of the semiconductor substrate having a metal via formed within the confines of the opening according to a processing step subsequent to FIG. 4;
FIG. 6 is a partial cross-sectional view of the semiconductor substrate having a layer of substrate material blanket deposited upon the first dielectric and metal via according to a processing step subsequent to FIG. 5;
FIG. 7 is a partial cross-sectional view of the semiconductor substrate having the layer of second substrate material removed except for a region above the metal via to form a second substrate according to a processing step subsequent to FIG. 6;
FIG. 8 is a partial cross-sectional view of the semiconductor substrate having a second dielectric formed in areas removed of the layer of second substrate material according to a processing step subsequent to FIG. 7; and
FIG. 9 is a partial cross-sectional view of the semiconductor substrate having a gate conductor formed upon the second substrate and source/drain implants placed within the second substrate to complete a second transistor according to a processing step subsequent to FIG. 8.
While the invention is susceptible to various modifications and alternative forms, specific embodiments thereof are shown by way of example in the drawings and will herein be described in detail. It should be understood, however, that the drawings and detailed description thereto are not intended to limit the invention to the particular form disclosed, but on the contrary, the intention is to cover all modifications, equivalents and alternatives falling within the spirit and scope of the present invention as defined by the appended claims.
Turning now to the drawings, FIG. 1 illustrates a partial cross-sectional view of a semiconductor substrate 10. Substrate 10 is preferably a silicon-based, single crystalline material doped either n-type or p-type. Arranged on the upper surface of substrate 10 are various isolation structures (not shown). Isolation structures can be formed either by a shallow-trench process or the well known LOCOS process. The isolation structures serve to isolate active devices placed within and upon substrate 10.
Formed across the entire substrate 10 is a dielectric 12. Dielectric 12 is often referred to as a gate dielectric. Dielectric 12 can be formed by growing an oxide upon the silicon-based substrate 10, or by depositing an oxide which, according to one embodiment, can contain nitrogen species. Deposited upon dielectric 12 is a layer of polycrystalline silicon ("polysilicon"). Select regions of polysilicon 14 and dielectric 12 are removed using conventional lithography: pattern, develop and etch cycles. The retained region is defined as an active region or, more specifically, the region in which a gate conductor 16 and gate dielectric 18 are formed. Gate conductor 16 and gate dielectric 18 are thereby the retained portions of polysilicon 14 and dielectric 12, respectively.
FIG. 2 illustrates a processing step subsequent to FIG. 1 whereby dielectric spacers 20 are formed on the opposing vertical surfaces of gate conductor 16. A lightly doped drain ("LDD") implant 22 is forwarded into substrate 10 prior to formation of spacers 20. After LDD 22 is present, and spacers 20 are produced, source/drain implants ("junctions") 24 are then formed. Prior to or after forming source/drain regions 24 is a processing step used to produce well-connect implant 26. Well-connect implant 26 is spaced from the area encompassed by first transistor 30. The amount of spacing is one such that implant 26 is electrically isolated from source/drain region 24 as well as LDD region 22. Thus, well-connect implant 26 is doped with an impurity opposite the impurity used in source/drain region 24 and LDD region 22. For example, well-connect implant 26 can comprise a p-type dopant, whereas the junction implants used to form n-channel transistor 30 can comprise n-type dopant. Conversely, well-connect implant 26 is n-type if transistor 30 is a p-channel transistor.
Formation of the source/drain region 24, LDD region 22, spacer 20, and well-connect implant 26 are processing steps which follow a particular sequence generally known to those skilled in the art. Regardless of the process sequence chosen, it is important to maintain adequate spacing between well-connect implant 26 and the outer periphery of source/drain region 24. The amount of spacing is dependent upon the implant species used and the range (depth) in which those species are forwarded into substrate 10. It is also important that the impurity type used to form well-connect implant 26 be of the same type found within substrate 10. As such, well-connect implant 26 forms a low resistance path to substrate 10. More specifically, well-connect implant 26 electrically couples to substrate 10 and specifically the channel region within substrate 10 directly beneath gate conductor 16 and gate dielectric 18.
FIG. 3, depicts a processing step subsequent to FIG. 2, wherein a first dielectric layer 32 is deposited across the transistor 30 as well as the topological surface of substrate 10 in regions outside of transistor 30. As first dielectric 32 is deposited, it conforms to some degree to the upward protruding gate conductor 16 of transistor 30 to form a peak 34. Peak 34 is preferably removed by a subsequent processing step using chemical mechanical polishing ("CMP"). CMP utilizes a slurry material and a polishing pad placed on the exposed surface of first dielectric 32, whereby the pad rotates and removes the upper surfaces commensurate with the lower surfaces. According to another technique, upper surface 34 can be removed using a sacrificial etch back. In this instance, a sacrificial material is placed on the upper surface such that the recesses or valleys are filled with that material. The material upper surface is then removed at an etch rate substantially the same as the dielectric under layer. When all of the sacrificial material is removed, the remaining dielectric surface is approximately planer in that it takes on the same contours as the planer surface of the sacrificial material. Regardless of the method chosen, the outcome remains the same: to produce a somewhat planer upper surface of first dielectric 32 in readiness for subsequent processing steps.
Referring to FIG. 4, an illustration is provided of an opening 36 formed through first dielectric 32 to well-connect implant 26. Opening 36 is produced by placing a masking layer across first dielectric 32 and then patterning a masking layer such that the region to be removed is exposed. The exposed region is then subjected to an etchant which, according to one embodiment, is a dry (anisotropic) etchant. Opening 36 is shown to extend along an axis perpendicular to the upper surface of first dielectric 32 and substrate 10 so as to form a direct path to well-connect implant 26. The width of opening 36 is defined to be no greater than the area occupied by well-connect implant 26.
As shown in FIG. 5, opening 36 is filled with a conductive material 38. Preferably, conductive material 38 is a metal or metal alloy such as Ti, W, TiN or Al. Conductive material 38 is thereafter removed from the upper surfaces of first dielectric 32 but retained within the confines of opening 36. The removed portions of conductive material 38 are shown by reference numeral 38a and the retained portions of conductive material 38 are shown by reference numeral 38b. Accordingly, reference numeral 38b denotes a via. The upper surface of via 38a is commensurate with the upper surface of first dielectric 32 using, for example, CMP. Removal of portions 38a is necessary to retain the substantially planer upper surface created during formation of first dielectric 32.
Conductive material 38 can be deposited in various ways such as, for example, sputter deposition, evaporation, etc. Regardless of the deposition method chosen, material 38 fills opening 36 so that via 38b occurs.
FIG. 6 depicts the deposition of a layer second substrate material 42 upon first dielectric 32 as well as via 38b. Second substrate material 42 is made, according to one embodiment, of a polycrystalline silicon ("polysilicon") material. Material 42 is preferably formed from chemical vapor deposition ("CVD"). The CVD process is performed such that the material is deposited to a thickness sufficient to full retain source and drain junctions which are subsequently forwarded therein. If the range (depth) at which the junctions are implanted is, for example, 0.2 μm, then it is preferred that material 42 be deposited to a depth which is approximately 0.2 μm.
FIG. 7 illustrates a processing step subsequent to FIG. 6, wherein material 42 is removed except for a region directly above via 38b and except for a region above an area laterally adjacent via 38b. Material 42 can be patterned and removed using conventional photolithography techniques. Preferably, the etchant used to remove the exposed portions of material 42 comprises, according to one embodiment, a dry (anisotropic) etchant. The etch period is designed to continue for a time sufficient to remove material 42. That time can be measured by dielectric byproduct from second dielectric 32, for example.
Once material 42 is removed, all that remains is a patterned substrate material, henceforth referred to as second substrate 44. Second substrate 44 is preferably doped with an impurity species to render it conductive. Doping substrate 44 occurs either after the processing step shown in FIG. 7 or the step shown in FIG. 8.
As shown in FIG. 8, regions removed of material 42 (i.e., regions lateral to second substrate 44) can be filled with a dielectric material 46. Dielectric material is blanket deposited across the entire topography, including the upper surfaces of substrate 44 as well as dielectric 32. Thereafter, material 46 is removed from the upper surface of substrate 44 using, for example CMP or sacrificial etch. Removal continues for a time sufficient to allow retainage of dielectric material 46 is regions laterally adjacent substrate 44. The removed areas are designated with numeral 46a, while the retained areas are designated with numeral 46b. The retained portions 46b are henceforth referred to as a second dielectric which serves to electrically isolate substrate 44 for other, laterally spaced substrates.
FIG. 9 illustrates formation of the second transistor, denoted as reference numeral 46. Second transistor 46 is produced by implanting LDD and source/drain regions 48 and 50 into second substrate 44. Implant of those regions occur by a self-align process, similar to that used to produce first transistor 30. As shown, substrate 44 is electrically connected to and abuts with via 38b. As such, electrical connection is made between substrate 44 and well-connect implant 26 by a virtue of via 38b.
The processing steps used to produce second transistor 46 need not be shown for sake of brevity. However, it is understood that those steps used to produce second transistor 46 are replicated from those used in producing first transistor 30. Regardless of the steps used, second transistor 46 comprises a well region existing between source and drain regions 50. The well region of second transistor 46 is electrically linked to via 38b. Since via 38b is conductive, and preferably metal, electrical connection is effectuated thereby to well-connect implant 26. Well-connect implant 26, being of the same impurity type as substrate 10, is electrically connected to the channel of first transistor 30. Although it is of the same impurity type as substrate 10, well-connect implant 26 contains a greater concentration of impurities than substrate 10.
For sake of clarity, first transistor 30, second transistor 46, and the various features used therein are not drawn to scale. Likewise, the topological thickness of first dielectric 32 and second dielectric 46b are not drawn to scale. It is not imperative that these features be defined or that dimensions be specified, all of which would be readily apparent to those skilled in the art given the benefits described herein. All that is necessary, however, is that second transistor 46 be confined entirely upon and within substrate 44b, and that substrate 44 be electrically connected to substrate 10. Of importance to that connection is that the relatively short distance by which the vertically directed via 38b extends. This short distance, and the highly conductive nature of the metal material used in forming the via, helps to prevent a substantial voltage differential between the well regions of transistors 30 and 46. Thus, the present process is designed to enhance consistency and conformity in the operation of transistors placed on separate elevation levels.
It will be appreciated to those skilled in the art having the benefit of this disclosure that the present process methodology is capable of producing p-type and/or n-type devices in three dimensions. According to one embodiment, transistors 46 and 30 are n-type transistors, and the channel areas of those respective transistors are p-type. Alternatively, transistors 46 and 30 can be p-type transistors, with the channel areas doped n-type. In the former instance, the well-connect implant 26 is doped p-type, and in the latter instance well-connect implant 26 is doped n-type. The relative concentrations of those dopants would be generally known to those skilled in the art.
It is be understood that the form of the invention shown and described is to be taken as exemplary, presently preferred embodiments. For sake of brevity, only one transistor is shown on each elevation level. However, it is within the spirit and scope of the present invention that numerous transistors be arranged across each elevation level so that the overall circuit extends in three dimensions and that select transistors on one elevation level can be connected to select transistors on another elevation level by a virtue of a well-connect via, such as via 38b. Various modifications and changes may be made to each and every processing step without departing from the spirit and scope of the invention provided the well-connect via concepts set forth in the present claims are retained. It is intended that the following claims therefore be interpreted to embrace all such modifications and changes, and accordingly, the specification and drawings are to be regarded in an illustrative rather than a restrictive sense.
|Cited Patent
|Filing date
|Publication date
|Dec 30, 1994
|Nov 28, 1995
|Hyundai Electronics Industries Co., Ltd.
|Method for fabricating stacked dynamic random access memory cell
|Mar 20, 1995
|Feb 20, 1996
|Hyundai Electronics Industries Co., Ltd.
|Method for fabricating attached capacitor cells in a semiconductor device having a thin film transistor
|Jun 7, 1995
|Mar 11, 1997
|Canon Kabushiki Kaisha
|Photoelectric conversion device
|Citing Patent
|Filing date
|Publication date
|Oct 8, 1996
|Mar 16, 1999
|Advanced Micro Devices, Inc.
|Multi-level transistor fabrication method having an inverted, upper level transistor which shares a gate conductor with a non-inverted, lower level transistor
|Aug 1, 1997
|Mar 30, 1999
|Advanced Micro Devices, Inc.
|Integrated circuit including a graded grain structure for enhanced transistor formation and fabrication method thereof
|Mar 4, 1997
|Sep 14, 1999
|Advanced Micro Devices, Inc.
|High performance MOSFET with a source removed from the semiconductor substrate and fabrication method thereof
|Dec 2, 1998
|Feb 15, 2000
|Advanced Micro Devices, Inc.
|Multi-level transistor fabrication method having an inverted, upper level transistor which shares a gate conductor with a non-inverted, lower level transistor
|Nov 10, 1998
|Jun 13, 2000
|Advanced Micro Devices, Inc.
|Ultra high density inverter using a stacked transistor arrangement
|Dec 22, 1998
|Jan 9, 2001
|Advanced Micro Devices, Inc.
|Source/drain junction areas self aligned between a sidewall spacer and an etched lateral sidewall
|Feb 12, 1999
|May 15, 2001
|Advanced Micro Devices, Inc.
|Semiconductor fabrication having multi-level transistors and high density interconnect therebetween
|Apr 24, 1998
|Jul 10, 2001
|Advanced Micro Devices, Inc.
|Ultra high density NOR gate using a stacked transistor arrangement
|Jul 17, 1998
|Mar 19, 2002
|Advanced Micro Devices, Inc.
|Ultra high density series-connected transistors formed on separate elevational levels
|Jun 12, 2000
|Jul 16, 2002
|Advanced Micro Devices, Inc.
|Elevated transistor fabrication technique
|May 18, 2001
|Sep 16, 2003
|International Business Machines Corporation
|Merged logic and memory combining thin film and bulk Si transistors
|Jul 13, 2006
|Apr 28, 2009
|Samsung Electronics Co., Ltd.
|Method for manufacturing multi-level transistor comprising forming selective epitaxial growth layer
|Feb 27, 2008
|Jan 11, 2011
|Samsung Electronics Co., Ltd.
|Methods of reducing impurity concentration in isolating films in semiconductor devices
|May 8, 2007
|Jul 8, 2015
|May 8, 2007
|Nov 22, 2007
|Indium Corp America
|Alloy compositions and techniques for reducing intermetallic compound thickness and oxidation of metals and alloys
|U.S. Classification
|International Classification
|Cooperative Classification
|European Classification
|Oct 8, 1996
Owner name: ADVANCED MICRO DEVICES, INC., CALIFORNIA
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:KADOSH, DANIEL;GARDNER, MARK I.;CHEEK, JON D.;REEL/FRAME:009112/0980
Effective date: 19961003
|Oct 8, 1996
|Assignment of assignor's interest
|Oct 20, 1998
|Certificate of correction
|Sep 28, 2001
|Fee payment
Year of fee payment: 4
|Nov 23, 2005
|Fee payment
Year of fee payment: 8
|Nov 20, 2009
|Fee payment
Year of fee payment: 12


text:
Leader of Georgia-Based Insurance Giant Appears on Best CEOs List for Fourth Time
COLUMBUS, Ga., April 14 /PRNewswire/ -- Aflac Chairman and Chief Executive Officer Dan Amos has been named America's Best CEO for the insurance/life category in 2009 by Institutional Investor magazine. It is the fourth time Amos has appeared on the prestigious list of America's Best CEOs.
To compile their list, Institutional Investor surveyed portfolio managers, analysts and other investment professionals, asking them to name the best U.S. CEOs in the sectors in which they invest. The top scoring CEOs in each sector were named to the prestigious list.
"Dan Amos being named America's Best CEO in the insurance/life category is a tremendous honor for Dan, Aflac and our shareholders," said Ken Janke Jr., SVP of Investor Relations. "Reflecting Dan's vision and leadership, Aflac has produced an enviable track record of growth during his lengthy tenure as the company's CEO. At the same time, he has managed Aflac with an unwavering commitment to transparency and responsiveness to the company's owners. This special recognition is very well deserved."
Under Amos's leadership, Aflac has become the number one provider of guaranteed-renewable insurance in the United States and the top insurance company in terms of policies in effect in Japan. He also is responsible for introducing the now iconic Aflac Duck to consumers in America and Japan.
In May 2008, Aflac became the first public company in the United States to conduct a shareholder vote on executive pay, commonly known as "Say on Pay." Amos is well known for his pay-for-performance management philosophy and has been recognized for his efforts to demonstrate his commitment to shareholders, such as givin
|SOURCE Aflac Incorporated
Copyright©2009 PR Newswire.
All rights reserved


text:
Article ID: 2517253 - View products that this article applies to.
ou get an HTTP 500 error attempting to access OWA on an SBS 2011 server, after you have provided your credentials to the login form.
The Microsoft Exchange Forms-Based Authentication (MSExchangeFBA) service is stopped.
Start the MSExchangeFBA service.
Note This is a "FAST PUBLISH" article created directly from within the Microsoft support organization. The information contained herein is provided as-is in response to emerging issues. As a result of the speed in making it available, the materials may include typographical errors and may be revised at any time without notice. See Terms of Use
(http://go.microsoft.com/fwlink/?LinkId=151500)for other considerations.
Article ID: 2517253 - Last Review: March 18, 2011 - Revision: 1.0


text:
Speed And Strength SS1300 Speed Strong Helmet
List Price: 169.95
Sales Price: $118.95
Speed And Strength SS1300 Speed Strong Helmet
Item Code: SpeedSS1300Strong
Color:Hi-Viz Green (with touch of yellow), Red, Blue, Green
Brand:Speed and Strength
Model:SS1300 Speed Strong
Shell:Thermo-Poly Alloy
Certification:DOT and ECE 22-05 approved
Tinted shields sold separately. For daytime use only.
- "A.T.P.A.™" Advanced Thermo-Poly Alloy Shell
- Meets or exceeds DOT and ECE 22-05 standards
- "Cool-Core®" Removable, Washable and Moisture Wicking Liner
- "AirStrike™" Direct Course Ventilation System
- "Lock 'N Load Plus™" Rapid Conversion Shield Replacement System
- "ALL CLEAR!™ Sight System" Optically Correct, Anti-Scratch, Anti-Fog and UV Resistant Face shield
- "Speed Strap™" Quick Release Chin Strap
*Note : Helmet comes with clear shield. Tinted shields (shown) sold seperately
Size Chart
How to Measure a proper helmet SIZING: To measure your head size, wrap a tape measure horizontally around your forehead. Select the helmet that is the closest fit to that size. A helmet should fit snug on your head. If it moves while wearing, it is too large. If it is painful to wear, it is too small. For proper sizing, your nearest dealer will be able to help you get sized up. FITTING: Open the chin straps and slide the helmet onto your head starting at the forehead. A helmet should feel snug. If it slides on easily it is too big. It should feel tight to pull down. Make sure the inner padding fits snug all around. You should feel the padding pressing against your cheeks and head. The last check for a proper fit is to test if it moves while wearing, there should be no movement if you shake your head. Place your hands on the helmet and move it front to back and side-to-side. If there is a lot of movement, try a size down.
Size Chart
|6 1/2" - 6 5/8"
|20 7/8" - 21 1/4"
|6 3/4" - 6 7/8"
|21 5/8 - 22"
|7" - 7 1/8"
|22 1/2" - 22 7/8"
|7 1/4" - 7 3/8"
|23 1/4" - 23 5/8"
|7 1/2" 7 5/8"
|24" - 24 3/8"
|7 3/4" - 7 7/8"
|24 3/4" - 25 1/4"
The SS1300 is the next rank up from the SS1100 in Speed and Strength's motorcycle helmet chain of command. It has an intermediate oval head form, is DOT and ECE rated, and is constructed using the same A.T.P.A. or advanced thermo-poly alloy shell found in other helmets in the ranks. The shield technology is also the same as far as the material used and its optical correctness. The attachment system is new though. SS has developed a new Lockdown shield security system. The main improvement with this system is that the base plates are spring loaded. This pulls the shield in against the gasket for a far better seal. This shield also has a locking mechanism to keep the shield down at high speed or when checking your blind spot. The removal of this shield is a little tricky and definitely cannot be done without taking the helmet off. To remove the shield, manipulate this little red slide to the forward position. Twist this dial and remove it from the helmet. Repeat the procedure on the other side. Once the dials are removed, pull the shield out away from the base plates. I learned a little trick for reinstalling this shield. Most helmet shields need to be installed in the raised position. With this shield, if you line up the mechanism and close the shield, the springs that hold the shield tight to the gasket will hold the shield in place while you reinstall the dials. This gives you an extra hand to hold the helmet. The only aspect of this shield I don't love is that the new system doesn't allow you to just have the shield just cracked open. The first detent has the shield open half way. This is ok for a parking lot, but you couldn't really go over about thirty five or so without the turbulence being blinding. A fair trade though to have the spring loaded baseplates.
Let's take a look at the venting. The chin vent flows air to the shield to prevent fogging. The chimneys are easily opened and closed with these low profile switches. The air is channeled directly to the head then led to the rear of the helmet by channels in the eps liner. Low pressure called the venturi effect draws the moist, hot air out of the back of the helmet. The vents down here near the bottom are unfortunately fakers but they do add a little detail to the helmet.
The SS1300 is fitted with yet another of Speed and Strength's wonderful Cool Core removable, washable, and moisture wicking liners. The detail is fantastic. The chin curtain is extra deep, and has a soft, Spandex feel to the hem to eliminate any irritation. The cheek pads are easily removable and the material is very comfortable against your skin, even when wet and mashed up against a beard. (thumbs up)
The SS1300 of course has the super easy to use quick release chinstrap system. Once this system is properly adjusted, all you have to do is slide the tab into the ratchet system and you're riding. To unhook, simply pull on the red tab and you're free.


text: Recently two friends of mine stayed at Cameo Cottage for three nights. They absolutely loved it and it really "made" their holiday to Devonport. The Cottage was very clean and so nicely furnished. They loved the little extras - toffees, nuts, the port. Each room was furnished so differently and they enjoyed sitting back sipping port in the lovely bath.... More


text: PAX Prime 2011: Battlefield 3 Matthew Morandi August 29, 2011 After the exibhit halls closed at PAX Team Island headed up to the PC Free Play area to see what would could find. And what did we find? Battlefield 3. I played the Alpha for ... 106 0 Read more


text:
Skyfall - Grading & Discussion
View Single Post
November 30 2012, 09:26 PM
Pumpkin Spice Bacon
Location: Kansas City
Re: Skyfall - Grading & Discussion
Professor Zoom wrote:
captrek wrote:
Starkers wrote:
Horses for courses really, you could argue clambering around on the moors without looking where you're going when there are thinly frozen over pools of water is Darwin level too.
In real life that may be kind of dumb, but in Hollywood you can fall through the ice, have an underwater fist fight with a bad guy, swim down to the bottom, pick up a flare gun, and shoot your way out.
Please don't give Mythbusters another stupid Hollywood thing to test out.
The thing with the flash-light struck me as really dumb too, just a really, really obvious thing you'd think they would have known better to not do. It's attract WAY too much attention. I'd think some moonlight and a degree of night vision would give one SOME level of sight at night without waving around a flashlight attracting attention. But, hell, couldn't Bond have had some night-vision goggles or something in the car? The flashlight just struck me as the story needing a way for the villains to find M.
Just because it's futuristic doesn't mean it's practical.
Pumpkin Spice Bacon
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text: No recent wiki edits to this page. It's Valentine's Day in Gotham City and murder can't be far behind. Secrets are revealed and decisions are made that will affect Batman, Catwoman, Jim Gordon and Janice Porter for the rest of their lives! And whatever you do, don't peek at the ending!


text:
"It turned out that newer ones, the SSRIs, were not protective, and that was a surprise," she said.
She said she hopes that publication of the study will influence drug companies to develop better antidepressants and get women to pay more attention to their cardiovascular risk factors.
"Hypertension is a risk factor for stroke and death and it is very badly controlled in the U.S. Although it has improved somewhat in the last decade, it still is far short of what it should be and it rises with age," she said.
Another issue that might be a contributing factor to this, she said, was the fact that "an old woman may not be treated as aggressively as middle-aged men. Plus, older people tend not to adhere to medications, and then some people can't afford them."
The survey, she said, was observational and not a strictly clinical study with control groups and close monitoring.
"We don't have clinical corroboration of depression. There was no psychiatric interview to see if a woman was depressed. We did screening as epidemiologists that has a lot of false positives and negatives," she said.


text: I'm with the earlier posters who advised distilled or filtered water, at least for the final rinse. Before I switched to filtered my negatives were routinely emerging covered in crud. I used a film squeegee for a while which greatly improved things but increased the risk of scratches on the still soft emulsion. Filtered water completely cured the problem of dirty negatives. If using Photo Flo or similar in the final rinse, I'd use half the recommended dilution. You might also want to pick up a small bottle of Rodinal developer. It keeps for ages - years in fact - and gives lovely negs when used at a very economical 1+50.


text:
Hopefully he'll find a way to make it ridiculously expensive.
Is this the ghost of a Michael Jackson impersonator?
Cool it with the trailers for trailers, marketing people.
BREAKING: Hollywood might not be a meritocracy.
Tony Stark is getting to old for this shit.
I'm lead to believe this is important.
I hope he fights a bear.
The movie "Lorenzo's Oil" stars Susan Sarandon and Nick Nolte in a story where parents try to do what any good parents would do, which is try and save their…
Until humanity relearns how to walk for more than a block, the incapacitation of motor vehicles will stay as a breeding ground for bad choices followed by terrible deaths. Make…
This one's kinda mean.
Why would you say that, Tom? Coming out with stink like that poop, you poop-mouth! Get all that poop coming out of your mouth!
Pretty good idea to rush this into production.
An icon from when soft-core used to be classy.
Thus fulfilling our weekly quota of 'AD' articles a day earlier. Nice!
Even when he's trying to be a good guy, he delves into dickdom.
Is it called 'Double Cross'? Yes. Yes, it f*cking is.
Take your Oscar noms and stuff it.
Atlantic City is a place built by crime and vice. The city enjoyed its heyday during prohibition where it became a hub for bootlegging. The money pouring into the city…
Just about every movie has some rich bastard as a character. Usually they are miserable, self-centered asses; however, in some cases they can actually be very likable characters. Below…
Because this is the type of news you need to know two years out from the film's release.
Great. Now we'll never get her to sleep.
'Iron Man 3′ trailer on the way but you've gotta prove you want it.
In this version, instead of yelling his famous catchphrase, he posts it on Twitter with the hashtag #littlefriend.
How else would you describe his current sci-fi boner?
Carly Rae Jepsen traded up from that Owl City guy.
David Lynch directs or GTFO.
Over the line, reboot people. Over the line!
What Hell hath cyber-bullying wrought?
This guy and his needs.
Because Luhrmann loves period pieces with contemporary music. Juxtaposition!


text:
Tribe finds identity as spring session endsPublished 5:00am Saturday, May 18, 2013
The difference a year makes. Wetumpka High took the field Thursday night capping the 10-day spring practice period with a solid direction heading into the off-season.
"Last year was a learning experience for all of us," said Tim Perry, capping his second spring as coach of the Indians. "We went through spring and the off-season thinking we were able to do one thing and then had to change midway through the season. We've been around our players for a year now and understand their strengths more. We have a direction we want to go with this offense to better utilize those strengths."
The strength Perry's talking about is a monster-truck sized offensive front (averaging over 6-feet and nearly 300 pounds) and a stable of steady-handed running backs, mixed with a muster of run-option quarterbacks and an assemblage of game-tested wide receivers.
"That's one of the things (the coaches) talked about last night: How do we continue to tweak this offense," said Perry. "We can spend the summer getting reps on what our strengths are and have a clear picture of what we want to do going into the summer."
Wetumpka High's Black-And-Gold Scrimmage Photos
Perry and his coaches used Thursday's Black and Gold Game as a way to further evaluate the Indians.
"We accomplished what we wanted to accomplish," said Perry. "Maybe to the casual observer, it didn't look like we did a lot. But, we didn't go into this trying to game plan against our own team. We wanted to look at certain players in certain situations. Our goal was not just to have one group win over the other, we wanted to have a clear picture of where we stand going into the off-season."
While the night was mostly positive, there was a negative moment when Dylan Mann suffered a leg injury that will sideline him for most of the summer.
"I'm heartbroken about Dylan's injury," said Perry. "He was one of the biggest surprises of the spring. His ability to play on the defensive front had gotten him into the two-deep rotation at defensive line."
Mann was engaged with an offensive Indian when the pair's weight shifted leading to a collapse.
"He's a good kid and very self disciplined," said Perry. "He was projected as the starting placekicker and punter this fall. But he's a fighter and a very self-motivated young man."
One of the coaching staff's main goals was to determine two-deep on the depth chart.
"We really wanted to look at some of the younger guys," said Perry. "We knew what the veterans could do. We wanted to look at some of the younger players and see how they performed and we were pleased."
Wetumpka High Spring Practice Photos
Sammy Britton stepped in at quarterback.
"We're really proud of the work and improvements that he's made," said Perry. "He worked extremely hard in the weight room in the off-season and really stepped out there and took charge of the spring. He was confident and he handled the ball well."
He also praised the work of understudies Christian Montague (rising sophomore), Quinten Taylor (rising senior) and Keldon Washington (rising sophomore) also had their moments in the limelight Thursday night. Taylor rushed for a touchdown and Washington threw for a touchdown.
"All four of our quarterbacks did a great job," said Perry. "Christian became a lot more confident and a lot more comfortable running the offense. Quinten and Keldon both ran the offense well."
Turnovers, on the whole, were down from last year. According to Perry, a year ago, seven passes were completed to defensive backs, while errant snaps stalled drives.
"Thursday, we had no errant snaps and only one interception," said Perry. "We only threw into coverage one time."
Defensively, Malik Hayes moved from safety to corner and Justin Connor also turned a few heads.
"Austin Garrett kind of flew under the radar last year," said Perry. "He's improved a lot of in the off-season, now the question is do we put him at running back or do we put him at safety? He's improved greatly at both positions."


text:
Las Cruces man sentenced for near-fatal beating
LAS CRUCES, N.M. (AP) — A Las Cruces man has been sentenced to 32½ years in prison for the near-fatal beating of his girlfriend.
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Was it fortuitous chance or circumspect fate that put an uncorrected proof of The Conversations into my hands as I began editing my first short film? (Actually, it was my boss but what unseen hand of destiny guided him?) I've spent my summer alternating between piecing together raw footage and devouring the sage advice and insight of Walter Murch, the Oscar-winning editor and sound designer of the Godfather trilogy, The Conversation, and Apocalypse Now, among other films.
When shooting wrapped last December, I dreaded the work ahead: editing seemed an arduous task at best; at worst, a tedious chore. I longed for the money to hire an editor and have it done with. Only when I sat down to actually assemble the footage into a cohesive whole did I begin to discover the true art of editing. That's when Michael Ondaatje's book-length conversations with Murch fell into my lap and opened up a world of possibilities.
Ondaatje was introduced to Murch during the editing of Anthony Minghella's film adaptation of Ondaatje's novel, The English Patient. Watching Murch at work intrigued and inspired Ondaatje. Murch didn't just paste together scenes as dictated by Minghella or his screenplay; he created his own pastiche, based on a technique of feeling. Murch puts his rough assembly together without sound, "as a piece of silent film," concentrating not on the dialogue but on the sense of visual completion. He finds his cut where the shot feels complete whether or not it actually is complete:
"Every shot is a thought or a series of thoughts, expressed visually. When a thought begins to run out of steam, that's the point at which you cut. You want that to be the moment at which the impulse to go to the next shot is at its strongest, so you are propelled into it."
Film editing and sound design are art forms that hold hands. The repetition of key sounds, Murch explains, creates (often unconscious) associations for viewers, as in The English Patient when the distant ringing of a bell on the soundtrack as the Patient eats a plum subliminally heralds his first flashback a minute later. Similarly, overlapping sound from one scene into the next creates an aural association in a thematically linked sequence.
Some of these are lessons one would pick up in any film school editing class or in Murch's excellent In the Blink of an Eye. The Conversations is so much more than a textbook, however. Murch's vast knowledge of film and editing encompasses the entire history of film, and even before. He puts forward a convincing argument that narrative film could not have existed without nineteenth-century literature.
Nor is this merely a reference book for film lovers and students. Ondaatje provides insights into his own creative process as a poet and novelist and Murch possesses a great many interests outside of film editing, among them music and poetry (he is currently translating the writings of philosopher Curzio Malaparte into verse). The book contains a wealth of perspectives into the creative mind.
Assembled in an informal question-and-answer format reminiscent of My Dinner with Andre, and packaged by Knopf in a handsome design similar to the sublime Conversations with Wilder, The Conversations probably won't be of interest to the casual weekend renter at Blockbuster. (Although it would make a lovely coffee table book.) But to those who love film not merely as escapist diversion but as an art form that crawls into their minds and refuses to relinquish its hold on their imaginations this is an invaluable book – one to read and reread, savoring the pleasures that unfold with each fresh visit and the perfect inspiration for one's own editing endeavors.
More reviews from Powells.com


text:
The lights are on
I've heard three things about Resident Evil 6:
1. It's a new take on the series.
2. It doesn't include anything in the old games.
3. It's a good mix of both.
The differences in opinions are huge about Resident Evil 6. All opinions on quality aside: what do you want in the future of Resident Evil? Do you want the new formula of Resident Evil 4, the old formula of the others, or a mix of both?
Revelations 21:6


text:
English, PDF, 410kb
This note presents selected findings based on the set of well-being indicators used for the Better Life initiative and shows what users of the Better Life Index are telling us about their well-being priorities.
"We are very pleased to welcome Slovenia to the Agency," said NEA Director-General Luis Echávarri. "Through its full membership, Slovenia will build on its past collaboration with the NEA to further contribute to the top international scientific, technological and legal expertise required for the safe, environmentally friendly and economical use of nuclear energy for peaceful purposes."


text:
This week's episode was going to be short thanks to a lack of news, but Paul and Jonah get into a long discussion about the Disney Afternoon from the 90's. which makes up for the lack of a Gaming Flashback or History. This week's news includes: Lenovo preinstalled Superfish adware on its laptop The FCC […]
Entries Tagged as 'Industry News'
Episode 379: Dizzney
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Episode 378: Hilary 2015
February 20th, 2015 · 1 Comment
This week has a very special guest, former IGN editor and current Dog and Thimble podcast host Hilary Goldstein, as he teams up with Paul to razz Jonah incessantly, as well as add a certain amount of NSFW spice to this week's proceedings. The news items include: Rock Band DLC hints at a comeback Sony […]
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Episode 377: Bronies, Welcome!
February 8th, 2015 · 2 Comments
This week's podcast begins on a sorrowful note, as since in the past week guest host Andrew Yoon (who co-hosted episode #374) passed away after drowning during a trip to Texas, while Jonah and Paul eulogize him. No Gaming Flashback this week, but plenty of news items: League of Legends tourney places limit on LGBT […]
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Episode 375: And We're Back
January 25th, 2015 · 1 Comment
After a problematic week, Episode 375 is now up, with tons of news. So much that there's no room for a Gaming Flashback or a Gaming History. The news includes: Joystiq no longer scoring" reviews New Harmonix survey points to Rock Band 4 Hatred gets an AO rating in US Disney, Activision both claim landslide […]
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Episode 374: Lost in a Crowd
January 11th, 2015 · 2 Comments
This week's episode of Gaming Podcast has a special guest co-host, Andrew Yoon, formerly of Joystiq and currently in card game and video game development. The Gaming Flashback is the one that started them all: LEGO Star Wars: The Video Game. The slow news week includes: DDoS service targeting PSN and Xbox powered by home […]
Tags: Editorial · Episode · FPS · Industry News · Microsoft · PlayStation 4 · Podcast · Show Notes · Sony · Xbox One
Episode 373: Happy New 2015
January 4th, 2015 · 2 Comments
This is the first podcast of 2015, and Jonah and Paul are ready to get going, talking about their holiday gifts and their disappointment in the film Birdman. There's no Gaming History or Gaming Flashback this week, but stay tuned for one next week. The news in this episode includes: FBI claimed to be investigating […]
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Episode 372: Sony and The Interview
December 21st, 2014 · 2 Comments
After a week off, Gaming Podcast recounts the eventful week that saw Song kowtowing to cyberterrorists over a Seth Rogen comedy, while Jonah and Paul have mixed opinions on the controversy. The news this past week were also big, including: Massive patch for Assassin's Creed Unity issued Blizzard considering gold-for-game-time trades in World of Warcraft […]
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Episode 371: This Podcast Is Extreme
December 7th, 2014 · 1 Comment
This week is another short one as the news is pretty light. However, there is another Gaming History as The Super Mario Bros. Super Show! is examined. This week's news includes: Destiny's PVP mode now breaks up teams if they're too good Xbox One sold over 720K Black Friday week in the US Godzilla The […]
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Episode 370: Excuse Me, Paul!
December 1st, 2014 · 2 Comments
This week is shortened due to Thanksgiving and Black Friday, but there's still some fun to be had, especially when the Gaming History is about The Legend of Zelda cartoon series. The news: Nintendo patents Game Boy emulation for use in mobile devices EA named one of the best places for LGBT equality Sony settles […]
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Episode 369: Dragon Age MMO-Style
November 23rd, 2014 · 1 Comment
This week's episode has Jonah annoyed at the gameplay decisions for Dragon Age: Inquisition, Paul discusses passwords, while the Gaming History is the cartoon Captain N: The Game Master. This week's news includes: Valve lays out new rules and guidelines for Early Access developers Xbox One console exclusive Ori and The Blind Forest delayed into […]
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text:
As President Barack Obama's U.S.-Africa Leaders Summit gets underway this week, on Sunday's political talk shows Dr. Tom Frieden, director of the Centers for Disease Control, discussed the ongoing Ebola outbreak in West Africa and whether Americans should be concerned. Meanwhile, Texas Governor Rick Perry talked tough on immigration.
Ebola Outbreak
The African Ebola outbreak killed 826 people by the end of last month after spreading from Guinea to Liberia and Sierra Leone.
Frieden appeared on four separate programs to ease concerns over the possibility of an Ebola outbreak in the U.S.
"We know it's possible that someone will come in. If they go to a hospital and that hospital doesn't recognize it's Ebola there could be additional cases or their family members could have cases. That's all possible, but I don't think it's in the cards that we would have an outbreak in this country," Frieden said on CBS' "Face the Nation."
"The way it spreads in Africa is really two things. First, in hospitals where there isn't really infection control and second in burial practices where people are touching the bodies of people who have died from Ebola. So it's not going to spread widely in the U.S. Could we have another people here, could we have a case or two, not impossible … but we know how to stop it here."
Fears of Ebola spreading in the U.S. grew last week with the announcement that American aid workers Dr. Kent Brantly and Nancy Writebol who contracted the disease would be taken to Atlanta for treatment. Brantly arrived on Saturday.
"I can understand why people are scared of Ebola," Frieden said on Fox News Sunday. "It's deadly, it's a gruesome death … but I hope and I'm confident that our fears are not going to overwhelm our compassion. We care for our own. We bring people home if they need to come home."
Immigration Crisis
On CNN's "State of the Union", Perry discussed the immigration crisis along the Nation's southern border and the steps being taken in his State to address the problem.
"What I'm prepared to do is not just the National Guard, but our Department of Public Safety, our Texas Ranger Recon Teams, the Parks and Wildlife wardens that we have deployed there," Perry said. "And then I will suggest to you there will be other individuals who come to assist in securing that border … I think that's what the American people want. They'd like to see a president who leads this country and says, you know what, we do have a problem on our southern border. We're going to deal with it."
CNN's Candy Crowley then suggested that Perry's tough border stance was related to a possible 2016 Presidential bid.
"I'm the Governor of the state of Texas," Perry replied. "My citizens' safety is what is foremost here. And it hasn't got anything to do with anything other than those numbers of individuals who are coming across the border. And when you think about the idea that some of them are from countries that have substantial terrorist ties, whether it's Pakistan or Afghanistan or Syria, we are at historic record highs with individuals being apprehended from those countries."
"We say it's time to secure the border," Perry continued. "Hasn't got anything to do with anything, other than the American citizens expect Washington to respect the Constitution and secure the border, one of the things that's actually enumerated in the Constitution. We'd like for them to do their duty."


text:
Here is a video I created about using the new Diagnostics Tools window that is available as part of Visual Studio 2015. It covers the basics around Intellitrace Events, Historical Debugging, Memory Usage, and Snapshot Comparison.
Send a Smile to the Visual Studio Team
I have been using Visual Studio 2015 since the early betas and one feature that often gets overlooked is the Send a Smile & Send a Frown buttons. These features allow you to quickly send feedback to Microsoft about your experiences in Visual Studio. When you click the Send a Smile/Frown button, you are presented with a dialog that allows you to send a screenshot and comments to the team to help them resolve the issue.
Once you fill out this form, you will be presented with a second form that gives you the ability to tag the issue with additional information, as well as categorize it as a crash, regression, slow performance issue, or other. Depending on which of these options you choose, you will be given the option to record steps to reproduce the issue or attach a file that makes the reproduction of the issue easier for the team.
The reason I like this feature is that you often get feedback directly from the Visual Studio team. I have probably submitted 10 or more send a frown feedbacks and have received feedback on at least half of them.
If you see something great in Visual Studio, send a smile. If you run into an issue, send a frown. If you are cordial and truly want feedback on your issue, I think you will be pleasantly surprised at how responsive the entire Visual Studio team is. Kudos to the entire Visual Studio team for rallying behind this feature and helping customers get past issues that arise out in the field.
Image Credit: Kate Ter Haar via Creative Commons
Analyzing Indexers using Roslyn
I've occasionally come across code that just really bothers me. One such case that I have seen is the abuse of indexers. I have seen some programmers use this as a "free" method call that doesn't require a name. They load it up with parameters and it just doesn't feel right. For example, some code that looks like this:
public int this[string s, int i, long l]
// Do some weird stuff here
return s.GetHashCode();
This code is perfectly legal C#, but can be very confusing for someone coming into the code for the first time. Let's create an analyzer that raises a diagnostic any time there is more than one parameter to the indexer to mitigate the creation of this monstrosity. To start, we'll register a
SyntaxNodeAction forSyntaxKind.IndexerDeclaration` nodes.
public override void Initialize(AnalysisContext context)
context.RegisterSyntaxNodeAction((syntaxNodeContext) =>
}, SyntaxKind.IndexerDeclaration);
Next, we can get the node and check the
ParameterList.Parameters and check the
Count on that object.
var node = syntaxNodeContext.Node as IndexerDeclarationSyntax;
if (node == null)
var paramCount = node.ParameterList.Parameters.Count();
Finally, we can raise a diagnostic if the parameter count is greater than 1. We'll also extract the class name from the indexer's parent, to provide a more meaningful diagnostic message.
if (paramCount > 1)
var className = (node.Parent as ClassDeclarationSyntax)?.Identifier.ToFullString().Trim();
syntaxNodeContext.ReportDiagnostic(Diagnostic.Create(Rule, node.ThisKeyword.GetLocation(), className));
So, the full diagnostic looks like this:
public override void Initialize(AnalysisContext context)
context.RegisterSyntaxNodeAction((syntaxNodeContext) =>
var node = syntaxNodeContext.Node as IndexerDeclarationSyntax;
if (node == null)
var paramCount = node.ParameterList.Parameters.Count();
if (paramCount > 1)
var className = (node.Parent as ClassDeclarationSyntax)?.Identifier.ToFullString().Trim();
syntaxNodeContext.ReportDiagnostic(Diagnostic.Create(Rule, node.ThisKeyword.GetLocation(), className));
}, SyntaxKind.IndexerDeclaration);
As you can see, once you know how to create an analyzer, you can easily create them to ensure the code you and your team are writing follow certain standards. You can also start creating a suite of standards that you like to follow to ensure you don't fall into any bad habits.
Image Credit: Tom Woodward via [Creative Commons](https://creativecommons.org/licenses/by-sa/2.0/)
Analyzing Memory Usage in Visual Studio 2015
The new diagnostic tools in Visual Studio 2015, provide a great deal of troubleshooting tools to help debug various problems in your application. One piece that I think is really nice is the memory usage information and the ability to snapshot memory and compare differences. If you are trying to location a memory leak in a certain area of code, you can take a snapshot before and after running the code and see the delta of objects and their sizes.
Let's create a simple example that never frees up memory to show how we can use these tools. We'll continually create strings in a loop and add them to a hashset, never freeing them. Our string in
y is going to continue to grow the more times the loop is executed.
static void Main(string[] args)
var strings = new HashSet<string>();
string y = "";
for (int i=0; i<50000; i++)
y = y + i.ToString();
Now, if I start the application, the Diagnostics Tools window appears and within 10 seconds, my application is already consuming 150MB of RAM and growing quickly.
If you open the
Memory Usage tab, you'll see a button that allows you to take snapshots. If you click this a few times, you'll get a few memory snapshots. These are indicated by blue triangles in the memory graph. You'll also see them listed in below the
Take Snapshot button.
Inisde the list of memory snapshots, you'll notice that Objects and Heapsize columns have blue text, which is clickable. This will take you into a detail view for the snapshot. For the Objects view, you will see all of the object types that are in memory and metrics around the number and size of objects. You can sort by the column headers to find if you have a lot of small objects that add up to a lot of memory or one large object eating it all up. In our example, if I sort by size, it's very obvious what the culprit is.
Inside this view, there is also the
Compare To drop down, which allows you to compare the current snapshot to another snapshot to see the deltas between the two snapshots. So, if I select a previous snapshot, I get some additional columns that provide the differences from the baseline snapshot to the currently selected snapshot. Again, in my example it is very obvious which object is growing, but these deltas may be very useful when the leak is not so obvious.
You can double click on any object in the snapshot and drill into it further. You'll see that there are
Paths to Root and
Referenced Types views available. The
Paths To Root view gives you the ability to figure out what is holding on to your object and the reference counts. This view lets you walk up the entire parent tree of objects that have references. This may help you figure out the root cause of what object isn't being released that needs to be.
Referenced Types view is a downward view of all of the objects that this object is holding on to. Since our example involves a
HashSet, we can see all of the instances of the strings that it is holding on to. If you pause the program and use a snapshot of the current state of the program, you can even see the values inside the objects inside the HashSet.
As you can see, inside that little diagnostic tools dialog, there are a lot of really nice features that can make tracking down memory problems just a little bit easier. Do you have a tip on using the diagnostic tools? If so, leave a comment below.
Image Credit: Aaron Escobar via Creative Commons
Working with Namespace Names in a Code Analyzer
Let's imagine we wanted to create an analyzer that compared the name of the namespace to the path of the folder in which the file it resides. If the namespace doesn't match the folder structure, then we should raise a diagnostic. As we have seen in a previous post, you can get at the file name for the code you are analyzing from a
SyntaxTreeAction. To start, we'll register a new
SyntaxTreeAction and get the file path. We can also take that path and turn it into something that resembles a namespace declaration:
compilationSyntax.RegisterSyntaxTreeAction((syntaxTreeContext) =>
var filePath = syntaxTreeContext.Tree.FilePath;
if (filePath == null)
var parentDirectory = System.IO.Path.GetDirectoryName(filePath);
// This will only work on windows and is not very robust.
var parentDirectoryWithDots = parentDirectory.Replace("\\", ".");
Now that we have the path to use for comparison, we can get the namespaces in the file and then perform the comparison. We can get all of the namespaces in a
SyntaxTree by using the
OfType extension method and find all
NamespaceDeclarationSyntax node types. Note: Make sure you use
DescendantNodes and not
ChildNodes to ensure you get all nested namespace declarations.
var namespaceNodes = syntaxTreeContext.Tree.GetRoot().DescendantNodes().OfType
We can loop over those nodes and compare the name to the folder path:
foreach (var ns in namespaceNodes)
var name = ????
if (!parentDirectoryWithDots.EndsWith(name, StringComparison.OrdinalIgnoreCase))
Rule, ns.Name.GetLocation(), parentDirectoryWithDots));
You might be tempted to just use the
ns.ToFullString() method to get the name of the namespace, however, this does not work for nested namespaces. For example, if we have the code:
namespace Foo
namespace Bar
The full namespace for
Bar is
Foo.Bar, but the
ns.ToFullString() method will only return
Bar. To properly get the full name, we need to ask our friend the
SemanticModel for the
Symbol for this
SyntaxNode and then we can get the
DisplayString from there. Getting the semantic model requires a little massaging of our registration code.
SemanticModel is available off of the
Compilation object. As we discussed in the "Working with Types in Your Analyzer" post, you can access the
Compilation object by registering for a
CompilationStartAction and then registering your other actions from that context.
So our registration code, can be modified to:
context.RegisterCompilationStartAction((compilationContext) =>
compilationContext.RegisterSyntaxTreeAction((syntaxTreeContext) =>
var semModel = compilationContext.Compilation.GetSemanticModel(syntaxTreeContext.Tree);
Then the code to check the namespace name can use the semantic model to get the
INamespaceSymbol and get the display string from that.
foreach (var ns in namespaceNodes)
var symbolInfo = semModel.GetDeclaredSymbol(ns) as INamespaceSymbol;
var name = symbolInfo.ToDisplayString();
if (!parentDirectoryWithDots.EndsWith(name, StringComparison.OrdinalIgnoreCase))
Rule, ns.Name.GetLocation(), parentDirectoryWithDots));
So, in the end, the full analyzer method looks like this:
public override void Initialize(AnalysisContext context)
context.RegisterCompilationStartAction((compilationContext) =>
compilationContext.RegisterSyntaxTreeAction((syntaxTreeContext) =>
var semModel = compilationContext.Compilation.GetSemanticModel(syntaxTreeContext.Tree);
var filePath = syntaxTreeContext.Tree.FilePath;
if (filePath == null)
var parentDirectory = System.IO.Path.GetDirectoryName(filePath);
// This will only work on windows and is not very robust.
var parentDirectoryWithDots = parentDirectory.Replace("\\", ".");
var namespaceNodes = syntaxTreeContext.Tree.GetRoot().DescendantNodes().OfType
foreach (var ns in namespaceNodes)
var symbolInfo = semModel.GetDeclaredSymbol(ns) as INamespaceSymbol;
var name = symbolInfo.ToDisplayString();
if (!parentDirectoryWithDots.EndsWith(name, StringComparison.OrdinalIgnoreCase))
Rule, ns.Name.GetLocation(), parentDirectoryWithDots));
And that is everything. I think this post really shows some of the power of using the
SyntaxTree and the
SemanticModel together to put together an analyzer that can process real world code. This post was inspired by a question I answered on StackOverflow and took a few iterations to get right. I thought I would share the process of how I got there so others can learn from it. If you have done something written a similar analyzer or have great examples of using the
SemanticModel and
SyntaxTree together, let's talk about it in the comments below.
Image Credit: Tech Cocktail via Creative Commons