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Development Cooridinator
Slim Goodies Foundation — Virtual
July 23 2016
Slim Goodies is a 501-3 (c) dedicated to improving the lifestyle of women using their mind, body, and soul. The organization is based out of Orlando, Florida. The opportunity is part time to support m…
Application Deadline: Available Year-round
Data Entry Clerk
EsianMall — Little Falls, NJ
July 23 2016
Want to gain hands-on experience to help your resume? We seek candidates with strong conceptual abilities: showing wit and depth of thought in your portfolio will catch our attention. EsianMall is see…
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Project Management Internship
EsianMall — Little Falls, NJ
July 23 2016
EsianMall is seeking a team leader who is organized, self motivated and an independent thinker and worker. Must know Excel, Microsoft word, and Google Drive. Typing and computer skills a must. Good ph…
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Accounting manager
sitel — Virtual
July 23 2016
The Accounting Manager is responsible for performing highly specialized accounting work required to maintain the Authoritys general ledger. Working under the direction of the Director of Finance, the …
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Pulse, LLC — Virtual
July 23 2016
We're seeking a managing editor (ME) for Apex Reviews (www.apexreviews.net), our subsidiary book review & author services firm.
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100 constructions — Virtual
July 22 2016
Job Description: We have an immediate need for experienced Customer Service Representatives. This is a fast paced environment that handles customer requests coming in ranging from basic product and c…
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Receptionist Needed
HINDUSTAN DORR-OLIVER LIMITED — Virtual
July 22 2016
Responsible for handling the front reception area with regards to walk in traffic and incoming telephone calls. Operate a 9 line telephone system. Perform various data entry, scanning of documents and…
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Investment Analyst
Kellogg's — Virtual
July 22 2016
We are looking for an experienced Investment Analyst to undertake financial research and report on prospective investment avenues. The successful candidate will study how an investment is likely to pe…
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Public Relations Intern
ABC — Virtual
July 22 2016
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front desk office
Jerum nnpc ltd — Virtual
July 22 2016
A front desk clerk is an administrative professional. He literally sits at the front desk of a commercial or residential building, serving as gatekeeper. He may announce visitors, answer the telephone…
Application Deadline: 7/26/2016


text:
Hello friends,
Welcome to dotTech 4.0.
This is the fourth major revision of dotTech and, if I do say so myself, it is our best one yet. Not only does this new theme give dotTech a fresh, modern look but it simply kick-ass. [Insert philosophical bullsh!t here.]
Please report any bugs or issues you see in the comments here or via e-mail. And keep a lookout for dotTech's mobile version getting a similar overhaul in the coming days.
Over and out.
-Mr. Boss
Related Posts
Subscribe to dotTech to never miss an article again!
About Ashraf
Related Posts
- Ashraf
@Calgarian2012: You are welcome!
@Raeldin: Done and done. :-)
- Raeldin
Ashraf, I like the new look. I have a feature request and a 'Did ya Know'
Feature Request: I normally start with the latest article and use the previous post/next post to move around. Could you put those links at the bottom of the articles also. Seems like they were there before, but I can't trust my seems. :-)
In the 'Did ya know' column: there isn't anyway to log in to the site in the Moble view. I switch to normal and back to mobile. Unless I can't trust my eyes either.
- Calgarian2012
Great new facelift. Easier to view and read. Thanks so much for all of your great work you do for all of us.
- Ashraf
@Eric: Glad you approve :-)
@Daniel: Thanks for letting me know; I'm glad it's better.
@Bruce Fraser: I've replied to the forums.
- Bruce Fraser
"Erm? What is wrong with the screenshots in the featured section, I don't understand. They look fine to me."
I need to use a screenshot to show what I mean. So please see my post in the forum: http://dottech.org/forums/improve-dottech/re-my-comment-in-the-feedback-to-the-new-website-design-about-the-terrorist-barber/#p16727.
- Daniel
It's better now, it the " About
Contact Us" links that I was having trouble with. When I first saw it, it was directly on white background, making it poor contrast. But now that you got a background, it no so bad.
- Eric
Great! That font is much, much better. Now the headlines don't resemble CAPTCHAs. I like the way you run this site. You listen to feedback and make changes if necessary.
- Ashraf
@Tom: I tried that but didn't like it because the gray/white partly blends into the background if shown in the back and ruins the text. Thanks for the suggestion, though.
@Eric: I originally was planning on not changing the font but you make a really good point. I've now changed it to something more readable.
@Jeanjean: Oh I thought it was an issue caused by dotTech. Glad it isn't.
@AFPhys: Yeah, I was afraid that might happen to some people. Glad it didn't happen to you.
@kelltic: I think you are referring to responsive designs. I looked at those but couldn't find a good fit for dotTech. Plus responsive designs are too restrictive when trying to vary content, such as ads, on mobile and desktop versions.
@naveed: It is just as wide as the old theme and the width is the current ad-hoc standard on the Internet due to varying screen resolutions. I think you get that feeling with this because the old one had a full white background while this new template is surrounded by blue.
Screenshots expand as they always have. There was a bug with some new articles but that has been fixed. Are you still facing the issue?
@Jyo: I may tweak around with the header at sometime in the future but for now this will have to do.
@jayesstee: The avatars are gravatar enabled. Add your avatar from http://gravatar.com and it will automatically appear here. Be sure to use the same e-mail you post with because gravatar tracks avatars by e-mail.
@Daniel: It is supposed to be hard to read. The links aren't the main content of dotTech and if I bolded them they would be distracting. Can you not read them at all?
@Everyone else: Thanks!
Very modern looking…. needs some getting used to though :)
- Daniel
I like the look of the new layout but I find the text at the top of the page hard to read. Could you make it bolder or something like that?
- jayesstee
I take a couple of days off, and look what you go and do!
Great new professional look, I like the fact that the comments now have avatars. Can I personalize the avatar so it doesn't look like a 'space invader'? (Sorry Eric!)
Version 5.0 will really have to be something even more amazing.
The header's a bit big for my personal taste, but who cares! I'm digging the blue-gray metallic theme you have going there.
Looks more refined definitely. 2 thoughts:
– it's feels very narrow and a little claustrophobic
– the screenshots don't expand as they used to
- Josh
Despite a more modern look, the site did not take visibly longer to load. Having spent much of my youth staring at too many crude DOS images, I don't find them very appealing, but it's just a personal thing. I am happy to see the development, because it suggests that the site is here to stay and that is what pleases me most. This is the site I enjoy visiting most, due to it's down to earth, user friendly, yet clean-living policy. Thank you for all the effort that goes into making it so conveniently functionable and for all the insights and info made available.
- Martin Brown
Great job on the new site design. Clear, clean and as always useful.
- mukhi
kewl, long live dottech!
- Zapped Sparky
Nice tweaks to the site, everything seems to be clearer (more visually defined/separated) and I love the space invaders :)
- kelltic
Well . . . Everything is certainly, uh, BIG. :) and BRIGHT. :) I liked the old version, but I like this, too. Changes always take some getting used to.
I use a desktop with two monitors. Websites are being redesigned to display on those tiny devices y'all love. On my screens they look carnival gaudy. And, you don't seem to mind that you can only see little bits of a page, something that irritates me no end. But, I'm not complaining about your site, just making a general statement.
I like your site. Keep up the good work.
- kevbo
- AFPhys
Nice job. However, count me as one who was not unhappy with the previous version.
I almost killed the tab right away when I did not recognize the site, though… lol
- Jeffinprov
The new look is great. What I like most, however, is that dotTech is still here, thriving and growing while other blogs I once cared about have faded away. Cheers to you, Ashraf, and your excellent associates!
- Jeanjean
@ Ashraf
I've said that before about Firefox.
All of a sudden, i opened it and on some sites, including yours, the layout and the colors disappeared (I didn't take snapshots).
I've discovered that it happens only when you clean Firefox with CCleaner and at the same time, Firefox is used.
To resolve the problem :
– don't use the two programs at the same time… of course ;
– if you are distracted (like me) and it still happens, just delete C:\Documents and Settings\xxxxx\Local Settings\Application Data\Mozilla\Firefox\Profiles\7w1lzdgy.default. A new folder will be created at the reopening of Firefox without loss.
Very very nice makeover! Glad to see you back at this site again. Additional writers help, and do an awesome job, but for some reason when the boss is around things run smoother. =)
- Eric
Wow, you managed to replace small ugly font with big ugly font. Actually it is an improvement but the brackets and parentheses are nearly identical and crowd the letters too much.
Are all of your wives camera shy? Surly one of them will agree to a photo.Ha Ha!
I do like the avatars though. They remind me of Space Invaders.Just don't add the Space Invaders music to the background.
- Terry Nachtmerrie
Looking good :insertthumbsupemoticonhere:
- Tom
The new design is very nice, I really like it. Only the text 'dotTech' in the right part of the logo looks a bit odd to me. I think it would be better if you switched the colors gray and blue in this text. So the front in blue and the sides in gray.
- Jaap
I like dotTech 4.0.!
- Ashraf
@Jeff: Looking at your example, you have a point. I'll see what I can do.
- Ashraf
@Eric: I agree. I've made the font size of titles larger to mitigate this. Let me know if that makes it better.
@tuiruru: My wife would take away my computer privileges if I floated her picture around the Internet.
@Locutus: Ditto. I was testing some new features which were reflected on the old theme.
@RobCr: You mean comment numbers? I'll add those.
@hatman: The new avatars are Gravatar enabled. Upload your avatar on Gravatar and it will be here. See http://gravatar.com.
@Unicorn02: Thanks for the suggestion. I'll look into it but I can't promise you it will be added. Essentially have a toggle would require me to maintain two themes and I don't have the budget that ArsTechnica does.
@Jeanjean: Erm? I'm not sure what issues you are having. Can you send me a screenshot?
@Everyone: Thanks!
- Jeff
I like the overall look, but part of the changes to the "Windows Software of the Day" pages makes them more difficult to read. On the August 15 edition, for instance, take a look at the headlines for the apps being reviewed: BrowserBackup Pro, Kiwi Monitor, etc. They are easier to read at the point size here in this message than they are in that headline font. The letters, and the stems of the letters are pressed too close together. Choosing a different font, or adding kerning (?) to your stylesheet for more spacing would be a big help.
- Jeanjean
No problem with the new look in XP or Win 7.
I just regret the colors (blue-brown), which were particularly evident at the opening of the page and allowed me to know immediately if I had a problem with Firefox.
BTW, these problem (layout and color disappearing) came from the simultaneous use of Firefox and CCleaner.
- Unicorn02
I love the Avatars in the comments section that look like Atari VCS graphics. Totally awesome!
Personally I would like to see a way to toggle between dark text on light background and the other way round. I find it much easier to read almost (note almost!) white text on dark grey background. This is sooo pleasing to the eyes. Look at arstechnica.com and choose "Main Menu" in the upper left. On the right side you can then toggle the themes. Would be cool to have something like this over here.
- hatman
Looks OK. My Avatar is gone.
- BarrysCool
Just overall Refreshing, well done gentlemen. :)
- RobCr
Looks pretty good.
I do miss the post numbers ?
- Mary
*phew* good! I'm not going bonkers! :D
Nice job on the site change!
@Mary: They're part of the rollout of dotTech 4.0 that started early :)
- Mary
Nice! Nice logo!
Funky profile pics too! :D
(I'm not sure if they're new though. I just noticed them…um, yesterday?) >.<
- Injeun
Nice job Boss!
Well, now that we've established you don't have a hareem as such, when do we get to see a picture of THE woman? ;)
- Donna
Well Check this Out. NICE! You go Guy!
- Eric
Overall I love the new look and like the ech in the logo. My only complaint is the font in the article titles. [IOS Mac] is very hard to read for example.
- mouser
Congratulations Ashraf,
It looks great!
- paulnjean
Any "artistic" change is always subject to personal preferences. As for opinion in this house, very nice indeed. Thanks for your good work, and pls enjoy health.
- Ashraf
@Bruce Fraser: Erm? What is wrong with the screenshots in the featured section, I don't understand. They look fine to me.
- Ashraf
@Everyone: Thanks for the comments and appreciation! Glad most everyone likes it.
@Anak: I'll look into it but not making any promises.
@Paul: I see what you mean. I will look into getting it changed but I'm not a graphic designer and I don't have the original PSD of that so… yeah.
@Kraal: Sorry you don't like it :-(
@Chris Christensen: Slang, my friend, slang. See http://www.urbandictionary.com/define.php?term=kick%20ass — it works both ways… not that slang has any rules.
@Paul: Erm, crap. Don't tell my wife. Fixed. Lmao.
- Bruce Fraser
Agree: get back the "reduce tweet bar."
The home page, with its headlines of recent articles is good… but the screenshots with those headlines look like they were made by the barber who terrorized the kids in our neighbourhood, with his wild and erratic haircuts.
- Paul
Random irrelevant thought:
On your "About the author" description, when you say "Happily married to the most beautiful women ever," do you mean "woman" with an a?
- haakon
As a "old" user- both my own age
and long time member:
Its NOT slower so I am happy! :-))))
AND- THANKS a lot for all your work!!!!
- Chris Christensen
Well, it probably kickS ass. Grammar is part of our world. Please.
- horseonovich
Nice interface. Looking good. Not that I didn't like the prior versions. Thanks for keeping this site going.
- Kraal
Sorry to say, but I liked the old design better. It seemed more friendly to me. This design feels less inviting.
Despite my dislike, however, it is still a well done job.
- Locutus
I wouldn't have said it out loud, but I am very glad v3 is gone. It was old, outdated, and rather odd looking. This new one looks great!
- Geo
Vice nice web rebuild.. Always enjoy your comments and recommendations…
- chuck
Very nice-great job!
- Cat
Very, nice and clean! Makes you want to keep reading!
- Prema
fantastic design ashraf :)
- Paul
The computer-person logo looks a bit… busy with the "ech" added to it.
- Anak
Very impressive! But,
Is there a way you can make the tweeter, and Like box collapse like on the old site?
I find it very distracting. :(
- Madhamish
I like it, looks professional and clean, well done.
- Ed
Loving the new look! Keep up the great site!

subset: commoncrawl


text:
|Publication number
|Publication type
|Application number
|Publication date
|Apr 4, 2000
|Filing date
|Sep 12, 1997
|Priority date
|Sep 13, 1996
|Fee status
|Also published as
|Publication number
|Leon Goldstein, François Brillouet, Cathrine Fortin, Joel Jacquet, Paul Salet, Jean Luc Lafragette, Antonina Plais
|Original Assignee
|Export Citation
|BiBTeX, EndNote, RefMan
|Patent Citations (3), Non-Patent Citations (6), Referenced by (83), Classifications (24), Legal Events (11)
|External Links: USPTO, USPTO Assignment, Espacenet
1. Field of the Invention
The present invention concerns the fabrication of opto-electronic components such as vertical cavity surface emitting laser (VCSEL) type semiconductor lasers. Other components to which this invention relates are microcavity light-emitting diodes and electrically tunable optical filters. This invention is more particularly concerned with the fabrication of such components when the light emitted or filtered must have a wavelength of about 1.3 μm or 1.5 μm so that it is in one of the spectral windows routinely used in fiber optic communication systems. The operation of the component at one of these wavelengths is obtained with the aid of an active structure that is the seat of the specific opto-electronic interaction of the component and which is formed within a monocrystalline indium phosphide (InP) wafer. This material has a cubic crystal lattice.
However, some parts of a laser or other component of this kind are advantageously made of gallium arsenide and/or other materials that also have a cubic crystal lattice but lattice matched to gallium arsenide, the lattice constant of which is different from that of indium phosphide. This applies in particular to a Bragg mirror constituting one end of the optical cavity of a laser or a microcavity light-emitting diode. It also applies to an electrical confinement layer for confining or equalizing the density of the excitation current that injects charge carriers into the optically active layer included in the cavity. A problem of crystal compatibility then arises because good crystal quality appears to be essential to correct operation of the laser, both with regard to a semiconductor wafer that is to constitute the active structure of a laser and with regard to other components such as a semiconductor Bragg mirror. The difficult problem is that of achieving a suitable connection of the crystal lattice of the gallium arsenide to that of the indium phosphide, suitable in the sense that it must be compatible with the required correct operation.
Various processes have been proposed or used to manufacture a surface emitting laser emitting at the wavelengths referred to above but circumventing or solving the problem referred to above.
2. Description of the Prior Art
A first prior art process avoids this problem, at least insofar as the Bragg mirror of the laser is concerned, by constructing this mirror from alternate layers of indium phosphide and a GaInAsP quaternary material lattice matched to the indium phosphide. The small difference between the refractive indices of the two materials then necessitates the formation of a large number of pairs of layers, given the high reflectance that is necessary. This number is in excess of 40 and leads to a narrow optical band of the mirror and a high electrical resistance. The latter is problematical if the excitation current is injected through the mirror. The quaternary material also introduces a resistance impeding the evacuation of heat. This first prior art process is described in "High reflectivity semiconductor mirrors for 1.3 μm emitting lasers", P. Salet, C. Starck, A. Pinquier, Cleo 96.
The same problem is avoided by lattice matching in a second prior art process in which the materials of the Bragg mirror are AlInAs and GaAlInAs. The drawbacks of this second prior art process are similar to those of the first.
The same problem is also avoided by lattice matching in a third prior art process in which the materials of the Bragg mirror are AlAsSb and AlGaAsSb. Unfortunately, these materials tend to break down into two separate phases. This third prior art process is described in: "AlAsSb: AlGaAsSb Bragg stacks for 1.55 μm wavelength grown by MBE", J. C. Harmand, F. Jeannes, G. Le Roux and M. Juhel Elec. Lett. Vol 31, 1995, 1669.
A fourth prior art process solves the problem in question, that is to say the problem that the crystal lattice of the Bragg mirror is lattice matched to gallium arsenide and is joined to an indium phosphide wafer. The materials of this mirror are aluminum arsenide AlAs and gallium arsenide. They produce a high reflectance and low thermal and electrical resistances. The mirror is formed by a process of epitaxial deposition on a second wafer of gallium arsenide. This second wafer is welded to the first by pressing them together at 600° C. in an atmosphere of hydrogen, the combination of the two wafers when bonded in this way being referred to as a "composite wafer".
This fourth prior art process is costly because the dimensions of the wafers that can be welded in this way are limited. Lasers are conventionally fabricated economically by making large wafers which can subsequently be cut up so that each of the separated parts constitutes a laser or one or more laser matrices. Because of their limited dimensions, the composite wafers formed by this fourth prior art method cannot each constitute a sufficiently large number of lasers for the method to be economic. Moreover, the threshold voltage of the fabricated lasers is relatively high. This fourth process is known internationally as the "wafer fusion" process and in France as "fusion bonding". It is described in an article by D. I. Babic, K. Treubel, R. P. Mirin, N. M. Margalit, J. E. Bowers, E. L. Hu, D. E. Mars, L. Yang and K. Carey, Photon. Techn. lett. vol 7, 1225, 1995.
One aim of the present invention is to enable the manufacture at low cost of surface emitting lasers or microcavity light-emitting diodes emitting at the wavelengths associated with indium phosphide but incorporating a Bragg mirror or other component having inherent qualities associated with gallium arsenide and with lattice matched materials in a way that prevents bonding two crystal lattices with different lattice constants compromising the performance of the lasers or the diodes. A more general aim of the present invention is to provide a simple and effective way of associating these two types of materials for the manufacture of a component of this kind.
To this end, the present invention consists of a process for fabricating semiconductor opto-electronic components including at least an operation of metamorphic deposition using an epitaxial deposition process to deposit at least one material that can be crystallized lattice matched to gallium arsenide onto a crystalline wafer lattice matched to indium phosphide so that said material forms at least one metamorphic layer disposed in series with said wafer on a functional optical path of said component.
Other aims of the present invention are indicated below.
Various useful arrangements associated with the present invention are explained hereinafter with the aid of the accompanying diagrammatic drawings and various embodiments of the invention are described by way of example. The figures of the drawings are sectional views of various surface emitting lasers at various stages in their fabrication. If two components of the same kind are shown in two of these figures and have equivalent functions in both lasers they may be designated by the same reference numbers and/or letters.
FIG. 1 shows first and second lasers fabricated by respective variants of a first process in accordance with the invention.
FIG. 2 shows third and fourth lasers fabricated by two other variants of said first process of the invention.
FIGS. 3 to 9 show successive steps in the fabrication of a matrix of lasers by a second process in accordance with the invention, this matrix including a fifth laser.
The order of succession of the semiconductor layers shown in FIGS. 1 and 2 from the bottom upwards represents the order of succession of the steps of depositing these layers and the lasers shown are part of a matrix of such lasers.
The surfaces of the semiconductor wafers are deemed to be horizontal and the thickness of these wafers and of the layers deposited on them are deemed to be vertical in the following description. The fabricated components can of course be disposed in any orientation.
Like the fourth prior art process previously mentioned, said first process in accordance with the invention includes the following operations, the layers deposited by these operations being shown in FIG. 1:
Forming said wafer based on indium phosphide InP. In describing this first process, this wafer is sometimes referred to hereinafter as the "first wafer". It has two horizontal principal faces, constituting a bottom face F1 and a top face F2. The active structure included in this wafer includes, from the bottom upwards:
a bottom injection layer 3 having a first type of conductivity, which is typically n type conductivity in this first process of the invention,
an active layer 4 consisting of an active material having a ternary or quaternary composition or consisting of quantum wells and lattice matched to indium phosphide, and
a top injection layer 5 having the other type of conductivity, i.e. typically p type conductivity.
This structure is adapted to have an excitation current passed through it in a vertical forward direction defined by the conductivity types of the injection layers. It is then able to amplify light at a wavelength between 1 200 nm and 2 000 nm, typically close to 1 300 nm or 1 500 nm.
Placing a second semiconductor wafer P2 made of materials lattice matched to gallium arsenide GaAs on the top face of the first wafer. The superposition of the two wafers forms a composite wafer having a bottom face F1 and a top face F3. Elements associated with the second wafer can have various functions within the laser to be fabricated. Two such functions are indicated below.
Forming a bottom mirror M1 on the bottom face and of a top mirror 13 on the top face of the composite wafer to constitute a vertical resonant optical cavity for the laser to be fabricated. One of these mirrors is partially transparent to enable the light from this laser to escape from this cavity.
Finally, forming a bottom electrode 16 and a top electrode 12 on the bottom and top faces, respectively, of the composite wafer to enable injection of said excitation current through the active structure.
In accordance with the invention, the placing of the second wafer is replaced by a deposition operation effected by said epitaxial deposition process. This operation progressively grows metamorphic layers on the top face of the first wafer.
As is well known, the usual consequence of using the epitaxial deposition process is to form layers having a crystal lattice continuous with the substrate on which the deposition is effected. However, in the context of the present invention, and given the large lattice mismatch between gallium arsenide and indium phosphide, the use of this process causes mechanical strains and dislocations in the crystal lattices of the materials in contact. There are a very large number of dislocations within the thickness of the deposited layers. Thus these layers of this material can be qualified as "metamorphic". Compared to other crystallized materials of the same composition, they can have a relatively high density of dislocations and a relative uniform distribution of these dislocations near the wafer on which they are deposited. Moreover, the strains applied to the crystal lattice of the first wafer can cause dislocations in it. The formation of major dislocations in the active structure contained in this first wafer will prevent operation of the laser. This is perhaps one reason why the fourth prior art manufacturing process previously mentioned includes complex steps so that it is not necessary to use an epitaxial deposition process to form the second wafer. However, in the context of the present invention, it is envisaged that the strains induced in the crystal lattice of the first wafer by a deposition process of this kind are perhaps limited to a small depth from the top face of the wafer, and it has been found that the operation of the underlying active structure may not be significantly affected by dislocations brought about by such strains.
It has also been found that some arrangements make a useful contribution to preserving the functional integrity of the active structure, although they are not indispensable. In accordance with one of these arrangements, the metamorphic deposition operation is preceded by the deposition of a blocking layer 6 lattice matched to indium phosphide. This blocking layer is of a quaternary composition material. It effectively blocks the dislocations generated in the gallium arsenide. It has the following composition, for example: Ga0.2 In0.8 As0.44 P0.56.
The epitaxial deposition process used is molecular beam epitaxy, for example. The MOVPE vapor phase growth technique could also be used, however.
The metamorphic deposition operation appears to be effected with great advantage at a temperature below 500° C., for example at 450° or 400° C.
In another arrangement that additionally has other advantages, the top mirror 13 is a Bragg mirror. It is made up of an alternating vertical succession of layers consisting of or based on gallium arsenide GaAs and layers of an index contrast material having a refractive index significantly different from that of gallium arsenide but lattice matched to gallium arsenide. This index contrast material is typically based on aluminum arsenide AlAs. It has the following composition, for example: Al0.9 GA0.1 As. In a manner that is known in itself, a mirror of this kind can produce a very high reflectance, around 99.8%, at least, which is necessary for the laser to operate and would not be possible with a metallic mirror. In the context of the present invention, it has surprisingly become apparent that the fact that a semiconductor Bragg mirror is made up of metamorphic layers does not significantly reduce its qualities and in particular does not introduce light losses likely to impede the operation of a laser. The bottom mirror is then only slightly transparent. It is of the multi-dielectric type for example. Its reflectance is around 99.7%, for example. It is formed by the following operations:
Locally etching the substrate 1 from the bottom face F1 of the wafer P1 to form a recess 20. This recess has a bottom 21. It is sufficiently deep for a reduced thickness of the wafer P1 between this bottom and the top face of the wafer to be equal to the thickness required for the resonant cavity. This thickness is that in the direction of axis A of the cavity. The surface dimensions of the recess are limited so that the surface 22 of the wafer outside the recess is sufficiently large to preserve the manipulation strength of the wafer.
Then, depositing successive layers of dielectric materials onto the bottom 21 of the recess 20, these layers having alternating refractive indices.
The fact that the top wafer is made by superposing many semiconductor layers would seem beneficial to preservation of the functional integrity of the active layer. However, it has been found that depositing the semiconductor layers with a lattice mismatch can cause surface roughness in the interfaces between layers having different refractive indices. Such roughness can lead to light losses through diffraction and such losses could prevent optical oscillation from being established in the resonant cavity. It has nevertheless been found that, using the invention, the roughness can be limited sufficiently for the presence of such layers in the resonant optical cavity of the laser to be compatible with correct operation of the latter.
In accordance with an arrangement that is beneficial for limiting such roughness, the semiconductor layers 7, 9, 10, 13, 14 superposed within the second wafer P2 contain between 0.1 mole percent and 5 mole percent of indium, preferably between 0.5 mole percent and 1 mole percent, for example around 1 mole percent. Adding indium forms "smooth" layers with no roughness.
Where the electrodes are concerned, at least one of them must be disposed laterally of the optical resonant cavity. This is the electrode on the same principal face as the partially transparent mirror. This electrode would prevent light leaving the cavity if it were disposed on the axis A of the latter. Locating one or both electrodes in this manner tends to cause the excitation current to flow at a distance from the resonant cavity. It is desirable for the excitation current in the active layer to be confined to the vicinity of the axis of the cavity. One way to achieve this known in itself is to incorporate into a semiconductor wafer a layer that is oxidized over part of its surface so that it is electrically insulative except in the vicinity of the optical cavity. However, confinement of the current can also be achieved by disposing the top electrode on top of the top mirror, the horizontal dimensions of which are limited to this end by an etching operation. In this case, the partially oxidized layer typically continues to make a useful contribution to uniformizing the excitation current density. This layer is advantageously of aluminum arsenide AlAs which is lattice matched to gallium arsenide. This is why the deposition operation forming the second semiconductor wafer P2 preferably includes the deposition of a layer of gallium arsenide 9 and the oxidation of this layer in a lateral area 8 away from the axis A of the optical resonant cavity.
Four embodiments of this invention will now be described more specifically.
In FIG. 1 the semiconductor layers have been deposited in the order indicated hereinafter to fabricate a first laser in accordance with the present invention. To form firstly a first wafer P1 the following layers are of indium phosphide InP unless otherwise indicated:
A 0.1 mm thick substrate 1 n-doped at the concentration of 3.1018 cm-3.
An etch stop layer 2 of GaInAsP with a characteristic wavelength of 1 180 nm. This layer is 50 nm thick and n-doped at the concentration of 1.1018 cm-3. During etching of the central part of the bottom face F1 of the wafer P1, this layer limits the depth of etching to form a surface on which a bottom mirror M1 made up of dielectric layers is deposited.
A bottom injection layer 3 with a thickness of 1 000 nm to 2 000 nm, n-doped at the concentration of 1.1018 cm-3.
An active layer 4 comprising a ternary or quaternary material or multiple quantum wells and having a characteristic wavelength of 1 300 nm or 1 500 nm. This layer is 100 nm to 1 000 nm thick and is not doped.
Finally, a top injection layer 5 which is 100 nm to 2 000 nm thick and p-doped at the concentration of 2.1018 cm-3.
A 30 nm thick layer 6 of GaInAsP is deposited on the top face F2 of the wafer P1. This layer is too thin to play any optical role.
The following layers are then deposited to form the second wafer P2, and are of gallium arsenide unless otherwise indicated:
A bottom layer 7 having a thickness of 300 nm to 500 nm and p-doped at the concentration of 2.1018 cm-3. The peripheral area of this layer is oxidized to constitute a dielectric screen 8 of AlOx used to confine or to uniformize the excitation current density.
A contact layer 10 having an optical thickness equal to 3/4 the emission wavelength of the laser, p-doped at the concentration of 3.1019 cm-3.
An etch stop layer 11 of indium and gallium phosphide GaInP. The proportions of indium and of gallium in this layer are chosen to lattice match gallium arsenide. This layer is 10 nm to 50 nm thick and is not doped. Its role is to limit the depth of etching of the top face F3 of the composite wafer including the wafers P1 and P2 carried out subsequently to delimit laterally the top mirror 13 of the laser.
The top mirror 13. This mirror comprises 20 to 30 pairs of layers 5 each comprising two undoped layers having the same optical thickness, equal to 1/4 the wavelength of the laser. The material of one of the layers of each pair has the composition Ga0.1 Al0.9 As and is lattice matched to gallium arsenide. The material of the other layer is gallium arsenide.
Finally, an undoped phase matching layer 14 approximately 200 nm thick. The aim of this layer is to introduce an appropriate optical distance between the mirror 13 and a top metallic layer 15 that reflects light and therefore cooperates with the mirror 13.
The combination of the layers 13 and 14 is etched to delimit the top mirror 13 laterally. After this etching a metallic layer of gold Au and/or tungsten W is deposited on the top face F3 of the composite wafer. It constitutes a complementary reflector 15 on the top mirror. On the layer 11 and on the contact layer 10 this metallic layer constitutes a top electrode 12 around the mirror 13.
A bottom electrode 16 is deposited on the bottom face F1 around the bottom mirror M1. The excitation current of the laser is subsequently applied to these electrodes by a power supply 17.
The fabrication of three other lasers which also constitute examples of the invention is similar to what has just been described except in respect of the points indicated hereinafter.
In the second laser shown in FIG. 1 the top mirror 13 is made by depositing dielectric layers with alternating refractive indices.
In the third laser shown in FIG. 2 the mirror 13 is made up of the same pairs of semiconductor layers as in the first laser except that these layers are p-doped to enable injection of the laser excitation current from the complementary reflector 15 which then also constitutes the top electrode 35. The layer 14, which is doped accordingly, has an electrical conduction function similar to that of the contact layer.
In the fourth laser, which is similar to the third, and also shown in FIG. 2, the mirror 13 comprises the same pairs of layers as in the third laser except that these layers are n-doped to reduce the electrical resistance and the optical losses of the mirror. The layers 7, 9 and 11 are also n-doped and the excitation current is transmitted via an n/p tunnel junction formed by the layers 5 and 7.
The second process in accordance with the present invention differs only slightly from the first, in particular in that it achieves not only the aims as previously mentioned but also additional aims such that this second process constitutes a preferred embodiment of the invention. These additional aims are indicated after a further explanation of the problems that arise in the fabrication of components such as surface emitting lasers.
As previously indicated, a Bragg mirror can advantageously be formed on an indium phosphide wafer P1 as previously described by depositing metamorphic layers consisting of materials whose crystal lattice matches that of gallium arsenide, one of these materials typically being gallium arsenide itself. It can therefore be beneficial to construct the bottom mirror from these metamorphic layers, although this is not done in the first process in accordance with the invention. It is well known that the two mirrors constituting the resonant optical cavity of a laser of this kind must be separated by distance that enables correct operation of the laser. The two mirrors must therefore be deposited on the two opposite principal faces of a wafer like the wafer P1 so that they are necessarily separated by the thickness of the latter.
A wafer of this kind has to be manipulated in various ways during the laser fabrication process. To enable economic collective fabrication of a large number of lasers, the wafer must be relatively large. To resist manipulation, a wafer this size must have a relatively great thickness, for example 0.1 mm. This thickness is much greater than the relatively small distance required between the two mirrors of the optical cavity of a laser, for example 0.04 mm. A thickness problem then arises, namely reconciling the relatively great thickness that is needed to enable manipulation of the semiconductor wafer and the relatively small thickness required between the two mirrors forming the optical cavity of each of the lasers to be fabricated.
The processes known in themselves do not constitute a total solution to this problem. In one such process, the mirrors of each optical cavity are Bragg mirrors based on gallium arsenide. Each such mirror must be disposed on one face, for example a top face, of an indium phosphide based wafer. For this it must first be fabricated by epitaxial deposition on a relatively thick gallium arsenide substrate. It is then assembled to the indium phosphide wafer by wafer fusion and reinforces it mechanically so that the opposite face of the wafer, for example its bottom face, can then be etched to thin the wafer. A second operation of the same type deposits the second mirror to form the optical cavity. This first process known in itself is costly because the dimensions of the mirrors and of the wafers that can be assembled in this way are limited, which limits the number of lasers that can be fabricated from the same wafer. Moreover, the crystalline dislocations occurring at the interface between the wafer and the mirrors which are attached to it by wafer fusion and these dislocations are such that they affect the operation of the laser fabricated by this process. Finally, this process requires the use of three semiconductor substrates.
In a second process known in itself that solves this thickness problem a wafer is fabricated by epitaxial deposition of the active structure onto the top face of a relatively thick indium phosphide substrate 1. Localized dielectric layer mirrors are deposited on the top phase of the wafer. Then, as previously described for the fabrication of the first laser shown in FIG. 1, the bottom face of the substrate is locally etched through a mask to form a recess for each chip. Dielectric layer mirrors are then deposited on the bottom of these recesses to include each chip in an optical cavity. This second process known in itself has the following drawbacks:
The semiconductor wafer is made more fragile by the recesses, even if intact areas remain between the recesses.
The process is long and delicate.
The flanks of the recesses are steeply inclined to the vertical direction. The fact that these recesses do not overlap each other results in a large distance between the mirrors deposited on their bottoms. This leads to a large (greater than 0.5 mm) spacing between the lasers and therefore limits the number of lasers that can be fabricated from the same wafer.
Additional aims of the present invention include:
enabling economic and reliable fabrication of opto-electronic components such as surface emitting semiconductor lasers that have to emit at the wavelengths associated with indium phosphide,
enabling good electrical isolation between components formed on the same wafer to constitute a laser matrix, and
enabling good dissipation of the heat generated in the active structure of a component fabricated in this manner.
FIGS. 3 to 9 show the second process in accordance with the invention, which achieves these additional aims. If elements shown in these figures are similar to elements shown in FIGS. 1 and 2 they can be designated either by the same reference letters and/or numbers or by reference numbers increased by 30, the layer 31 from FIG. 3 being analogous to the layer 1 from FIG. 1, for example. Moreover, in FIGS. 5 to 9 the order of the operations to deposit the new layers shown correspond to the order in which these layers follow on from the top downwards in these Figures.
The steps of the second process in accordance with this invention will first be described generally in a manner that also applies to the first process, and then in a specific manner corresponding only to the second process. It should be understood that to reduce repetition, some non-essential operations are described for only one of the two processes, although they can also be used for the other.
Essential operations common to both processes are:
Forming the wafer P1. This wafer has a thickness between a bottom face F1 and a top face F2. This thickness is sufficient to impart to the wafer sufficient mechanical strength to allow it to be manipulated. This mechanical strength will be referred to hereinafter as "manipulation strength".
Forming at least one top mirror 13 or 43 on the top face of the wafer. This top mirror is a Bragg mirror. It is formed by depositing a vertical succession of metamorphic layers consisting alternately of a material such as gallium arsenide AsGa and an index contrast material as previously described with reference to the first process. These layers constitute top mirror layers.
Forming at least one bottom mirror M1 or M2 on the bottom face of the wafer P1 to constitute a vertical resonant optical cavity for each component to be fabricated. Each such resonant cavity comprises the combination of a bottom mirror and a top mirror facing each other along the axis A of the cavity. At least one of the two mirrors is partly transparent to enable the cavity to be optically coupled to a unit external to the component.
Finally, forming a bottom electrode 16 or 46 and of a top electrode 12, 15 or 45, respectively on the bottom face and the top face of the wafer P1 to enable the application of an electrical control signal across the wafer for each component to be fabricated.
To be more specific, the wafer P1 is formed by epitaxial deposition operations on a substrate 1 or 31 having a first type of conductivity. This first type of conductivity is the n type or the p type according to whether the first or the second process given by way of example is under consideration. These operations include, in succession:
depositing a buffer layer 30 having the first type of conductivity,
depositing a doped bottom layer 3 or 33 having the first type of conductivity,
depositing an active layer 4 or 34, and
depositing a doped top layer 5 or 35 having a second type of conductivity opposite to the first to constitute an active structure. The electrical control signal is typically an excitation current for injecting charge carriers into said active layer from the bottom and top doped layers, said component being a surface emitting laser or a microcavity light-emitting diode. The component could, however, also be an electroabsorption amplitude modulator, a phase modulator or a tunable filter, for example. The active layer would then not have the function of amplification but instead a function of absorbing or phase-shifting light. The emitted light modulated or filtered by said component is referred to as "light from this component" hereinafter. The path followed by this light in this component constitutes the "functional optical path" previously mentioned. This optical path extends along the part of the axis A that is inside the optical cavity.
In accordance with the invention, this process is typically applied to the fabrication of a matrix of components comprising a plurality of opto-electronic components mutually juxtaposed in a surface of the matrix. Some of the operations are collective fabrication operations effected by depositing or eliminating at least one layer extending over all of the surface of the matrix to be fabricated. A layer deposited by a collective fabrication operation of this kind constitutes a collective layer like the layer 46. The wafer P1 is formed by a set of such operations, this set itself constituting one such operation. The process then further includes at least one separation operation. Each such separation operation includes localized etching of a collective layer for mutual isolation of a plurality of areas of the collective layer and assignment of these areas to the respective opto-electronic components to be fabricated.
To be more specific, in the second process of the invention, the operation of forming at least one bottom mirror includes the following collective fabrication operations:
Preparing a support 50 having a bottom face 52 and a top face 54 and a thickness conferring upon it mechanical strength constituting said manipulation strength.
Placing this support on top of said top face F2 of the wafer P1.
Fixing this support to this wafer by wafer fusion. This wafer fusion is effected by pressing the bottom face 52 of this support onto each top mirror 43 at raised temperature.
Etching the wafer P1 from its bottom face F1. This etching eliminates the substrate 31 and then the etch stop layer 32 so that the wafer has the thickness required for the resonant cavity. It replaces the bottom face F1 by a new bottom face F4.
Finally, depositing successive layers onto this new bottom face, these layers constituting collective layers and having alternating refractive indices to constitute each bottom mirror like the mirror M2. This mirror is a Bragg mirror formed by depositing a vertical succession of metamorphic layers constituted as previously indicated. These layers constitute bottom mirror layers.
The operation of forming a bottom electrode 46 includes:
a collective fabrication operation effected by depositing a bottom electrode layer constituting a collective layer, and
a separation operation consisting in etching the bottom electrode layer.
The operation of depositing at least one bottom mirror M2 includes:
a collective fabrication operation effected by depositing bottom mirror layers, and
a separation operation consisting in etching these bottom mirror layers.
Referring to FIGS. 8 and 9, a complementary separation operation etches the wafer P1 from its bottom face as far as the top injection layer.
The top mirror 43 is preferably partially transparent and preferably has the second type of conductivity, the support 50 is preferably a semiconductor and transparent and preferably also has said second type of conductivity. The operation of forming a top electrode then includes:
a collective deposition operation effected by depositing a top electrode layer 45 onto the top face 54 of the support 50, and
an etching operation forming a window 56 for each component to be fabricated in this top electrode layer. This window extends around the axis A of the optical cavity of this component to enable light to exit the component.
The support 50 is preferably of silicon. Other embodiments of the invention are possible, however, in which neither the light nor the energization electrical current of the component needs to pass through this support. This support could then equally well be of some other material such as aluminum nitride.
The process preferably further includes an operation of forming a heatsink 58 for each component to be fabricated. This operation is effected by depositing a mass of material that is a good conductor of heat, such as gold, onto the top face F1 of the wafer, onto the bottom mirror M2 and/or onto the bottom electrode 46 of this component.
This has the advantage that the heatsink is as close as possible to the source of heat, consisting of the active structure of the component. This would not be so if the heat had to pass through the support in order to be evacuated.
The following more specific numerical values and compositions are given by way of example only for implementation of the second process in accordance with the invention. Unless otherwise indicated, the layers of the wafer P1 are of indium phosphide InP.
Substrate 31: thickness 0.25 mm or 0.3 mm, diameter: 50 mm.
Buffer layer 30: thickness 1 000 nm.
Etch top layer 32: GaInAsP quaternary material, characteristic wavelength 1 180 nm, thickness 150 nm.
Bottom injection layer 33: p-doped at the rate of 1.1018 cm-3, thickness 270 nm.
Active layer 34: 7 to 9 quantum wells 10 nm thick with characteristic wavelength 1 550 nm separated by 10 nm thick barriers with characteristic wavelength 1 180 nm.
Top injection layer 35: n-doped at the rate 1.1018 cm-3, thickness 270 nm.
Top mirror 43: 23.5 pairs of layers comprising alternately AlAs and GaAs, thickness about 100 nm, N-doped at the rate of 1.1018 cm-3.
Crystallized silicon support 50: thickness 0.3 mm, diameter 75 mm.
Top mirror 43 and support 50 fusion bonded at 600° C. or 700° C. in a flux of hydrogen at a pressure of 30 g/cm2 to 150 g/cm2 for 20 minutes to one hour.
Bottom mirror M2 deposited by molecular beam epitaxy and differing from the mirror 43 only in its doping type, which is the P type.
Bottom contact layer 44: thickness 100 nm, p-doped at the rate of 3.1019 cm-3.
From the foregoing it is apparent that a matrix of opto-electronic components made by the second process in accordance with the invention includes at least the following:
A crystalline wafer P1 lattice matched to indium phosphide and an inherent mechanical strength lower than the desirable mechanical strength of the matrix.
Metamorphic layers 43, M2 of materials that can be crystallized lattice matched to gallium arsenide. These metamorphic layers are formed on the wafer P1 and are disposed in series with the wafer on a functional optical path A of each component of the matrix.
Finally, a support 50 made from a material different from those of the metamorphic layers and of the wafer P1. This support has a greater mechanical strength than the mechanical strength of the wafer. It is fixed directly to the metamorphic layers 43 by wafer fusion to confer the required mechanical strength on the matrix.
The above description concerns the fabrication of lasers in particular.
The fabrication of a microcavity light-emitting diode essentially differs from that of a laser of the above kind in the length of the cavity between the two mirrors and in the reflectance of these mirrors. The values to be obtained for this length and for these reflectances in the context of the present invention are the same as those well known to the skilled person for such diodes outside the field of the invention.
The fabrication of a tunable filter further differs, in particular, in that the two mirrors must be partly transparent and in that the active structure operates with a different electrical polarization, possibly variable. Once again the values to be obtained for these parameters are well known to the skilled person.
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|U.S. Classification
|438/46, 438/47, 438/29, 372/50.11
|International Classification
|Cooperative Classification
|European Classification
|Sep 12, 1997
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Welcome to JD Williams, Shoe Tailor customers! The Shoe Tailor has now closed but everything you know and love about Shoe Tailor you will find here at JD Williams. You'll be able to shop with the same account number, call the same phone number, and enjoy all the same delivery options. Plus, your favourite footwear ranges, including Cushion Walk, Brevitt, Lotus and Van Dal plus our perfect calf-fitting boots and figure-flattering fashion can all be found right here on JD Williams too. You'll also be able to shop from a wide range of home and garden, electricals and kids departments too!


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What is the difference between outfit and costume? For example, if you don't typically go to clubs, but you buy a certain set of clothes that you think will make you look like a typical club-goer, which does that set of clothing constitute?
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A costume is something you put on to make yourself look like something or some one, especially an actor dressing as a character.
An outfit is just a set of clothing that (hopefully) goes well together.
So, clothes you wear to a club are just an outfit, since you are not attempting to portray someone or something else.
If you're dressing up to affect a personality for a party or other celebratory occasion, or if you are an actor playing a role, it's a costume.
protected by RegDwigнt♦ Oct 24 '13 at 8:52
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Be Well at UC Irvine
UC Irvine has an array of resources and people who are here just for you. Click to browse »
Parent Involvement Photos
Photos from various campus events with Anteater parents.
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Information on housing options during the academic year »
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video: UCI – Shine Brighter
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A collection of image links from social media and the UCI community.


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Pathfinder Campaign Setting: Dragons Unleashed (PFRPG)
Pathfinder Adventure Path #100: A Song of Silver (Hell's Rebels 4 of 6) (PFRPG)
Pathfinder Adventure Path #99: Dance of the Damned (Hell's Rebels 3 of 6) (PFRPG)
Pathfinder Adventure Path #98: Turn of the Torrent (Hell's Rebels 2 of 6) (PFRPG)
Shadows Over Vathak—Ina'oth Player's Guide (PFRPG) PDF
Arcane Pistoleer
Paizo Inc.(based on 2 ratings)
Each Paizo miniature is made from the finest non-lead metal. It comes unpainted and and as a single piece.
Miniature sculpted by Neil McKenzie.
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Ships from our warehouse in 1 to 7 business days.
Are there errors or omissions in this product information? Got corrections? Let us know at email@example.com.
See Also:
Product Reviews (2)
Doubt use of cestus,
Wish List for Feats,
Pathfinder Roleplaying Game: Horror Adventures,
[Purple Duck Games] Kineticist of Porphyra (and guide) discussion,
Pathfinder Player Companion: Legacy of Dragons (PFRPG),
Question about Daughters of Fury (GMs Only... Spoilers!),
Why is it so difficult to determine what has Lawful and / or Chaotic alignments, but so easy to determine Good and Evil alignments?,
Retraining GM signoff,
Cleveland RNC 2016,
Wayfinder #15 (PFRPG),
Vampire Hunter D: Message from Mars Comes to the World of Pathfinder,
Paizo Announces Hundreds of Pathfinder Events and Activities for Gen Con 2016,
Pathfinder's Mischievous Goblins Return to Wreak Havoc on Free RPG Day in New We B4 Goblins Module,
Trapdoor Technologies Releases Officially Licensed Digital Toolset for the Pathfinder Roleplaying Game,


text:
Most Popular "Family Problems" Titles
- Movies or TV
- Genres
- Keywords
- IMDb Rating
- Instant Watch Options
- In Theaters
- On TV
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1. American Beauty (1999)
R | 122 min | Drama
A sexually frustrated suburban father has a mid-life crisis after becoming infatuated with his daughter's best friend.
Writer: Alan Ball | Director: Sam Mendes | Stars: Kevin Spacey, Annette Bening, Thora Birch, Wes Bentley
Votes: 819,526 | Gross: $130.06M
2. Flipped (I) (2010)
PG | 90 min | Comedy, Drama, Romance
Two eighth-graders start to have feelings for each other despite being total opposites.
Writers: Rob Reiner, Andrew Scheinman, Wendelin Van Draanen | Director: Rob Reiner | Stars: Madeline Carroll, Callan McAuliffe, Rebecca De Mornay, Anthony Edwards
Votes: 60,183 | Gross: $1.75M
3. My Hindu Friend (2015)
124 min | Drama
Diego is a film director very close to death, surrounded by people who are having trouble dealing with his current tempestuous mood. Chances are he won't survive, but if he does, that means he needs to relearn how to live.
Writer: Hector Babenco | Director: Hector Babenco | Stars: Willem Dafoe, Maria Fernanda Cândido, Reynaldo Gianecchini, Selton Mello
Votes: 155
4. Power Monkeys (2016 TV Mini-Series)
35 min | Comedy
Topical comedy set within the E.U. Referendum campaign following both camps along with political aides who serve Donald Trump and Vladimir Putin. A spin-off from 2015 comedy series "Ballot Monkeys".
Stars: Gwyneth Keyworth, Kevin McNally, Andy Nyman, Archie Panjabi
Votes: 80
5. The Chair (2017)
94 min | Crime, Horror, Thriller
An innocent man on death row witnesses savage killings at the hands of the prison's sadistic Warden. To survive, he must match the brutality in the prison and confront his own horrifying past.
Writers: Erin Kohut, Peter Simeti | Director: Chad Ferrin | Stars: Bill Oberst Jr., Timothy Muskatell, Roddy Piper, Noah Hathaway
6. Exhibit A (2007)
85 min | Crime, Drama, Thriller
The timely story of a normal family disintegrating under financial pressure, eventually driven to the unimaginable. We witness the terrifying events unfold through daughter Judith's video camera, which subsequently becomes Exhibit A.
Writers: Darren Bender, Dom Rotheroe | Director: Dom Rotheroe | Stars: Bradley Cole, Brittany Ashworth, Angela Forrest, Oliver Lee
Votes: 1,184
7. Naked Harbour (2012)
123 min | Drama
Naked Harbour tells the story of people who seek love and acceptance at any cost.
Writers: Mikko Kouki, Aku Louhimies, Niina Repo | Director: Aku Louhimies | Stars: Alma Pöysti, Aino Louhimies, Sean Pertwee, Deogracias Masomi
Votes: 2,038
8. BlinkyTM (2011)
13 min | Short, Horror, Sci-Fi
A young boy living in the near future looks for an escape from a home with arguing parents. As a way to cope with the recent arguments from his parents he receives a robot companion that he ends up abusing.
Writer: Ruairi Robinson | Director: Ruairi Robinson | Stars: Max Records, Jenni Fontana, James Nardini, Joe Childs
Votes: 1,592
9. The Story of the Last Chrysanthemum (1939)
148 min | Drama, Romance
In Tokyo in 1888, Kikunosuke Onoue, the adoptive son of an important actor, discovers that he is praised for his acting only because he is his father's heir, and that the troupe complains ... See full summary »
Writers: Matsutarô Kawaguchi, Shôfû Muramatsu, Yoshikata Yoda | Director: Kenji Mizoguchi | Stars: Shôtarô Hanayagi, Kôkichi Takada, Ryôtarô Kawanami, Kinnosuke Takamatsu
Votes: 1,978
10. Zusammen Allein (2015)
25 min | Short, Drama
Frank (Mario Pokatzky) is unemployed and addicted to gambling. He attempts to stop gambling, looking for a job and joins a support group to save the relationship with his son David (Niklas Osterloh)
Writer: Marco Hülser | Director: Marco Hülser | Stars: Mario Pokatzky, Niklas Osterloh, Julian Schappei, Reiner Wagner
Votes: 5
11. The Crazy Family (1984)
106 min | Comedy, Drama
The Kobayashi family finally get the chance to move out of their tiny, cramped Tokyo apartment in favour of the suburban house of their dreams. But all is not well: the house is infested by... See full summary »
Writers: Gakuryû Ishii, Norio Kaminami, Yoshinori Kobayashi | Director: Gakuryû Ishii | Stars: Katsuya Kobayashi, Mitsuko Baishô, Yoshiki Arizono, Yûki Kudô
Votes: 569
12. Aftermath: A Test of Love (1991 TV Movie)
97 min | Crime, Drama
Based on a true story, an adoring wife and mother is taken hostage during a robbery and brutally murdered.
Writers: Gary Kinder, Gregory Goodell | Director: Glenn Jordan | Stars: Richard Chamberlain, Michael Learned, Zeljko Ivanek, Doug Savant
Votes: 111
13. Usta (2009)
118 min | Drama
Writers: Bahadir Karatas, Ayfer Tunç | Director: Bahadir Karatas | Stars: Yetkin Dikinciler, Fadik Sevin Atasoy, Sevket Çoruh, Hasibe Eren
Votes: 393
14. Ellery Queen, Master Detective (1940)
Approved | 69 min | Adventure, Crime, Drama
The mysteriously ill John Braun makes a new will, leaving out his daughter Barbara, over the protests of his wife. The trouble began when the daughter wanted to marry Mr. Braun's doctor, ... See full summary »
Writers: Frederic Dannay, Manfred Lee, Eric Taylor | Director: Kurt Neumann | Stars: Ralph Bellamy, Margaret Lindsay, Charley Grapewin, James Burke
Votes: 80
15. Invitation (2008)
Comedy, Drama
a film about how attitude dissimilar family against abortion .....
Writers: Ebrahim Hatamikia, Chista Yasrebi | Director: Ebrahim Hatamikia | Stars: Mahnaz Afshar, Siamak Ansari, Reza Babak, Negar Foroozandeh
Votes: 679
16. Täältä tullaan, elämä! (1980)
118 min | Drama, Romance
In the punk rock era of the late 1970s three restless teenagers, two boys and a girl, spend their time in and out of a special class for problem kids. Jussi seldom sees his parents at home,... See full summary »
Writers: Pekka Aine, Yrjö-Juhani Renvall | Director: Tapio Suominen | Stars: Esa Niemelä, Tony Holmström, Kati Outinen, Risto Piskunen
Votes: 469
17. The Marshal of Finland (2012)
50 min | Drama
A film about Gustaf Mannerheim, Marshall and 6th President of Finland.
Writers: Sam Kihiu, Erkko Lyytinen, Anthony Ndu'ngu, Teemu Nikki, Andronico Otieno, Ken Saan, Emma Taulo | Director: Gilbert K. Lukalia | Stars: Telley Savalas Otieno, Beatrice Wangui, Ruth Maingi, Jacky Vike
Votes: 242
18. Twisted Roots (2009)
99 min | Drama
In this stylish Finnish drama, the secrets and desires of a family can no longer be suppressed. Mikko turns out to have a hereditary illness. Since then he has been worried. How long can he... See full summary »
Writers: Selja Ahava, Saara Saarela | Director: Saara Saarela | Stars: Pertti Sveholm, Milka Ahlroth, Niko Saarela, Emma Louhivuori
Votes: 152
19. Harjunpää and the Persecutors (1993)
100 min | Crime, Drama, Thriller
A police story, where the policeman Timo Harjunpää works on a case where two losers start a harassment campaign against a rich and successful computer expert. Tragedy cannot be avoided.
Writers: Matti Yrjänä Joensuu, Åke Lindman, Esko Salervo | Director: Åke Lindman | Stars: Kari Heiskanen, Riitta Havukainen, Mats Långbacka, Sari Havas
Votes: 71
20. Holiday at the Seaside (2013)
16 min | Short, Drama, Family
Amalia, a girl of thirteen, gets her first period one day before leaving for the seaside with her parents.
Writers: Cristina Grosan, Stefan Statnic | Director: Cristina Grosan | Stars: Mara Purza, Stefan Statnic, Andreea Vasile
Votes: 29
21. The Farewell (1982)
90 min | Drama
Writers: Vivica Bandler, Eija-Elina Bergholm | Director: Tuija-Maija Niskanen | Stars: Carl-Axel Heiknert, Kerstin Tidelius, Pirkko Nurmi, Sanna Hultman
Votes: 36
22. Se tavallinen tarina (1972 TV Movie)
94 min | Drama
Writers: Veikko Kerttula, Hannu Salama | Director: Veikko Kerttula | Stars: Riitta Räty, Ahti Kuoppala, Helinä Viitanen, Matti Viironen
23. Three Scenes with Ingmar Bergman (1975)
92 min | Documentary, Biography
The original interview was broadcasted in three parts, edited from 13 hours of conversations between Bergman and Donner.
Writer: Jörn Donner | Director: Jörn Donner | Stars: Jörn Donner, Ingmar Bergman, Erland Josephson, Sven Nykvist
Votes: 33
24. Yö on pitkä (1952)
107 min | Crime, Drama, Thriller
Writers: Matti Kassila, Aarne Tarkas | Director: Aarne Tarkas | Stars: Jussi Jurkka, Mirja Karisto, Åke Lindman, Kaarlo Halttunen
Votes: 35
25. Have I Told You Lately That I Love You? (1958)
15 min | Documentary, Short
Student film showing how modern electronic gadgets and technology in the home and in the workplace contribute to people becoming alienated from each other.
Stars: Bob Olsen, Gloria Jensen, Marty Ranhotis
26. Kasvot kuvastimessa (1953)
73 min | Drama
Writers: Ralf Rubin, Ossi Skurnik | Director: Ralf Rubin | Stars: Airi Honkaniemi, Tauno Majuri, Ritva Karisto, Kalevi Hartti
Votes: 32
27. Las buenas costumbres (1990)
99 min | Comedy, Drama, Romance
Writer: Alejandro Licona | Director: Julián Pastor | Stars: Max Kerlow, Joaquín Garrido, Juan Carlos Colombo, Miguel Solórzano
Votes: 8
28. Laura's Room (1988)
48 min | Comedy
Writer: Kaisa Rastimo | Director: Kaisa Rastimo | Stars: Mari Rantasila, Ilkka Merivaara, Kristiina Halkola, Paavo Piskonen
Votes: 27
29. Merrily, Merrily (2008)
17 min | Short, Drama
A simple story about a 13-year-old girl in an existential crisis. Her name is Merrilee. She is an only child. Introspective and out of place, her social nexus is nominal. Home is her solace... See full summary »
Writers: James M. Johnston, David Lowery | Director: James M. Johnston | Stars: Emily Burgardt, Jessica Craft, Andrew Sensenig
Votes: 6
30. Perhe on valttia (1986– )
Stars: Jarno Hiilloskorpi, Pirkko Mannola, Taisto Orre, Eija Partanen
31. Pedro Osuna salva la navidad (2015)
45 min | Thriller
Director: Germán Magariños | Stars: Vic Cicuta, Pedro Osuna, Ramon Cordero, Leandro De la Torre
32. Abu Mohammad (2015)
16 min | Short, Drama, Family
At 71, Abu Mohammad finds new ways to communicate with his family.
Writer: Heba S. Abu Musaed | Director: Heba S. Abu Musaed | Stars: Abdul Menem Amaireh, Jamil Awwad, Juliette Awwad
The Guard (2008– )
Out of the Woods
43 min | Drama
Creators: Raymond Storey, Charles Bishop, Michael Donovan | Director: Jason Furukawa | Stars: Steve Bacic, Jeremy Guilbaut, Zoie Palmer, Sonya Salomaa
Votes: 9


text:
10 of the most controversial catwalk moments ever
From human backpacks to Amy Winehouse ripoffs, here are the biggest runway scandals.
Take a sneak peak at the sexy new Victoria's Secret catalogue, starring Miranda Kerr, Candice Swanepoel, and the rest of your favourite Angels.
From human backpacks to Amy Winehouse ripoffs, here are the biggest runway scandals.
Style chameleon Olivia Palermo is known for her impeccable taste. Here, we chart her best looks ever - get your Pinterest boards ready.
From Lea Michele's décolletage-baring dresses to Margot Robbie's right-on-character style and Brie Larson's amazing hair, Comic Con is apparently the best place to spot some of the biggest celebs in …
The actress hasn't put a fashion foot wrong since announcing she is pregnant with her second child.
Well, can you blame her?
In honour of Miranda Kerr's engagement, we've trawled the recent couture shows to help her pick a wedding dress. Which one should she wear?


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Release Date:
November 6, 2012
This animated release for kids follows Gummibar and his group of silly friends on an adventure from the Caribbean to the North Pole on a search for the missing Santa Clause, who can't be found just days before Christmas. ~ Cammila Collar, Rovi
- Genre: Kids and Family
- Category Family-Oriented Comedy, Holiday Film
- Theme: Missing Persons, Obsessive Quests
- Studio: Lionsgate
- Run Time: 50 min
- Language: English
- Picture Format: widescreen
- Release Date: November 6, 2012
- Director: Bernie Denk , Jurgen Korduletsch
other Info.
- Online Item #: 14275875
- Store Item Number (DPCI): 058-19-0511
- Made in the USA or Imported


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I'm working on a small application in Qt and I'm using the SQL library together with SQLite as the database. So far this has worked out well. The
QSqlQuery class only provides a method for getting column values by index instead of field name. However, using the
record() function the current row on the query can be turned into a
QSqlRecord, which has the
value() function for getting values by field name.
So, this works out just fine and allows me to write shorter and cleaner code, but a join query like the following brings problems:
SELECT t1.*, t2.* FROM table1 AS t1, table2 AS t2 WHERE t1.table2_id=t2.id
So we execute this query as normal, and convert a row to a record. But turns out that the column names in the
QSqlRecord aren't prefixed with the table name - for example, there are two columns called
id to be found in the record object. This is obviously a bit problematic.
What's the best solution to this problem?
(I've found this issue in the Qt bug tracker, but it's not of much help.)


text:
If you have troubles since the update to WordPress 4.5 please read this post before opening a new thread.
Can the code be modified for the archive page to only display the post excerpt rather than the full post text?
Hi usersight,
The archive page uses the same loop as the index which breaks the content based on using the more tag: http://en.support.wordpress.com/splitting-content/more-tag/
I would suggest giving that a try as the theme is built to support this method to break up content.
Otherwise, you can try going into includes>loop-index.php and searching for the_content and replace that whole line with:
if ( is_category() || is_archive() ) {
} else {
The topic 'Archive Page to display a post summary rather than the full post text' is closed to new replies.


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What are the down sides of using a composite/compound primary key?
We started with Q&A. Technical documentation is next, and we need your help.
Whether you're a beginner or an experienced developer, you can contribute.
There's nothing wrong with having a compound key per se, but a primary key should ideally be as small as possible (in terms of number of bytes required). If the primary key is long then this will cause non-clustered indexes to be bloated.
Bear in mind that the order of the columns in the primary key is important. The first column should be as selective as possible i.e. as 'unique' as possible. Searches on the first column will be able to seek, but searches just on the second column will have to scan, unless there is also a non-clustered index on the second column.
I think this is a specialisation of the synthetic key debate (whether to use meaningful keys or an arbitrary synthetic primary key). I come down almost completely on the synthetic key side of this debate for a number of reasons. These are a few of the more pertinent ones:
Most of the issues with non-synthetic primary keys revolve around issues when PK values of records change. The most useful applications of non-synthetic values are where a database schema is intended to be used, such as an M.I.S. application where report writers are using the tables directly. In this case short values with fixed domains such as currency codes or dates might reasonably be placed directly on the table for convenience.
I would recommend a generated primary key in those cases with a unique not null constraint on the natural composite key.
If you use the natural key as primary then you will most likely have to reference both values in foreign key references to make sure you are identifying the correct record.
Take the example of a table with two candidate keys: one simple (single-column) and one compound (multi-column). Your question in that context seems to be, "What disadvantage may I suffer if I choose to promote one key to be 'primary' and I choose the compound key?"
First, consider whether you actually need to promote a key at all: "the very existence of the
Second, what criteria would you apply to choose which key in a table should be 'primary'?
In SQL, the choice of key
Third, are you rather alluding to using an artificial/synthetic/surrogate key to implement in your physical model a candidate key from your logical model because you are concerned there will be performance penalties if you use the natural key in foreign keys and table joins? That's an entirely different question and largely depends on your 'religious' stance on the issue of natural keys in SQL.
Need more specificity.
Taken too far, it can overcomplicate Inserts (Every key MUST exist) and documentation and your joined reads could be suspect if incomplete.
Sometimes it can indicate a flawed data model (is a composite key REALLY what's described by the data?)
I don't believe there is a performance cost...it just can go really wrong really easily.
The main downside of using a compound primary key, is that you will confuse the hell out of typical ORM code generators.
To David B>> that's a major PLUS, not a downside ! ORM is bane and should be avoided like plague.


text:
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The ho that seeks out and sleeps with people who have the latest and greatest technology.
You know David has been getting laid a lot more just cause he had the Galaxy S4 a few days before it came out. He must know a lot of techno-hoes.
by Janky Jimmy May 18, 2013
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Synonyms of unstable in English:
2 unstable coffee prices
changeable, volatile, variable, fluctuating, irregular, unpredictable, mercurial, capricious, erratic, 'on-again, off-again'
[Antonyms] fixed, firm
3 he was mentally unstable
unbalanced, of unsound mind, mentally ill, deranged, demented, disturbed, unhinged, volatile
informal kooky
[Antonyms] balanced, of sound mind
Definition of unstable in:
What do you find interesting about this word or phrase?
Comments that don't adhere to our Community Guidelines may be moderated or removed.
= trending


text:
Rick Blaine: Louis, I think this is the beginning of a beautiful friendship.
Humphrey Bogart (1899 - 1957)
Source: As Rick Blaine in Casablanca, 1942
Contributed by: Zaady
Rick: Here's looking at you, kid.
Capt. Renault: What on Earth brought you to Casablanca? Rick Blaine: My health, I came to Casablanca for the waters. Capt. Renault: The waters? What waters? We're in the desert! Rick Blaine: I was misinformed.
Yvonne: Where were you last night? Rick: That's so long ago, I don't remember. Yvonne: Will I see you tonight? Rick: I never make plans that far ahead.
Rick Blaine: Of all the gin joints in all the towns in all the world, she walks into mine. Number Two in the Top Ten Most Famous Movie Quotes. -The Guinness Book of Film
Major Strasser: You give him (Rick Blaine) credit for too much cleverness. My impression was that he's just another blundering American. Captain Renault: We musn't underestimate American blundering. I was with them when they blundered into Berlin in 1918.
Ugarte: You despise me, don't you? Rick Blaine: If I gave you any thought I probably would.
The only point in making money is so you can tell some big shot where to go.
There never seems to be any trouble brewing around a bar until a woman puts that high heel over the brass rail. Don't ask me why, but somehow women at bars seem to create trouble among men.
Senor Ferrari: (To Rick Blaine) Might as well be frank, monsieur. It would take a miracle to get you out of Casablanca, and the Germans have outlawed miracles.
Copyright © 2016 Gaiam, Inc.


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Magnolia, TX
A Perfect Fit For A Contractor Or Home Remodeler! 2 Bedroom Home With More Than Half An Acre Of L...
Magnolia, TX
Pleasant One Story Home In Lakes Of Magnolia. Wonderful Island Kitchen With Granite Counters, Ti...
Magnolia, TX
Beautiful 4 Beds 2 Bath Home Built On Half Acre Corner Lot. Home Features Central Heat And Air Co...
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Listing information last updated on July 24th, 2016 at 1:14am CDT.


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Course Listings
Last Updated: May. 9, 2014
Perspectives in Web Course Management for Education and Training
Format: World Wide Web
This special topics course is a Web-dependent, distance education course concerning the theory and application of Web course management systems. Web course management systems such as WebCT, offer instructors design tools for managing their courses online. Topics to be covered include theories of Web course management, Web course tools, Web course ownership, and Web course assessment.
Prerequisite(s): Acceptance to graduate programme in Education
Find the course you're looking for! Visit Canadian Virtual University.
Canadian Virtual University (CVU) is a partnership of Canada's leading universities offering 250 degrees, diplomas and certificates and 2000 courses completely online and through distance education.