text:
|Publication number
|Publication type
|Application number
|Publication date
|Sep 28, 2010
|Filing date
|Oct 12, 2007
|Priority date
|Sep 1, 2005
|Fee status
|Also published as
|Publication number
|Niraj Rana
|Original Assignee
|Micron Technology, Inc.
|Export Citation
|BiBTeX, EndNote, RefMan
|Patent Citations (21), Classifications (13), Legal Events (3)
|External Links: USPTO, USPTO Assignment, Espacenet
This application is a divisional of U.S. patent application Ser. No. 11/217,894 filed Sep. 1, 2005, which is incorporated herein by reference in its entirety.
The present invention is directed generally toward methods for etching doped oxides in the manufacture of microfeature devices.
Manufacturers of microelectronic devices are continually reducing the size and increasing the density of components in integrated circuits to increase the speed and capacity of the devices while reducing the overall size and power consumption. Memory device manufacturers, for example, seek to increase the capacity of memory devices (e.g., dynamic random access memory (DRAM) circuits) while reducing the size and/or increasing the density of the components in the devices without compromising performance.
DRAM circuits are generally manufactured by replicating millions of identical circuit elements (e.g., memory cells) on a single workpiece. A memory cell is an addressable location that can store one bit (binary digit) of data. Memory cells in DRAM circuits, for example, generally include a storage capacitor and an access field effect transistor. These components can also include a number of different features or structures (e.g., source areas, drain areas, gates, word lines, bit lines, etc.) that are fabricated on the workpiece. As memory cells shrink, however, it is becoming increasingly difficult to fabricate the cells within desired specifications, while simultaneously decreasing the size of the individual cells and increasing the cell density.
One area of particular concern in the manufacture of memory cells is providing capacitors with sufficiently high storage capacitance to maintain a charge at the desired refresh rates. Many manufacturers use three-dimensional capacitor configurations, such as stacked capacitors, to address this problem. Stacked capacitors are stacked or placed over the access transistor for a cell located in the workpiece. One common type of stacked capacitor, for example, is a double-sided container capacitor. A double-sided container capacitor is shaped like an upstanding tube or cylinder having a generally arcuate cross-section. Double-sided container capacitors are advantageous because they generally increase the storage capacitance of the memory cells, and yet reduce the depth of the container. Double-sided capacitors, however, generally require more lateral space than conventional capacitors, and this is not desirable because minimizing the lateral dimensions of the capacitors is necessary to increase circuit density and still electrically isolate the capacitor plates from the bit line contacts. As such, it is desirable to fabricate double-sided container capacitors that can be positioned extremely close together within the device (i.e., a high density of devices).
One particular process in fabricating double-sided capacitors is etching a relatively thick dielectric layer (e.g., a doped oxide layer) adjacent to a portion of the capacitor structure. The doped oxide etching process requires an etchant with a high selectivity to nitride because the lattice that holds the respective container capacitors together is generally made from a nitride. The etching process additionally requires a high selectivity to other materials (e.g., TiN and polysilicon) used to form portions of the capacitor structure.
Conventional etching processes include an etchant comprising a mixture of acetic acid and hydrofluoric acid (e.g., 30:1 ac-HF) to etch the doped oxide material. This etchant has a selectivity of about 250:1 for phosphosilicate glass (PSG) to nitride. Etching processes using this etchant, however, include several drawbacks. For example, the etch rate of PSG using this mixture is relatively slow (e.g., about 2,000 Å/minute) and can require about 6-7 minutes per workpiece. As a result, this process can impact the throughput of the fabrication process because the etching process needs to be run on a single wafer platform to minimize defects. Another drawback is that acetic acid is extremely flammable and difficult to work with because it has a very low flash point. Accordingly, manufacturing tools and processes generally require special safety features and precautions. These extra steps and equipment can significantly increase costs. Furthermore, acetic acid itself is quite expensive compared to other acidic solutions.
Another conventional etching process includes an etchant comprising 10:1 HF. This solution, which can etch PSG at about 9,000 Å/minute, can reduce the etching process time to less than 90 seconds per wafer. Etching processes using an etchant including 10:1 HF, however, also include several drawbacks. For example, the selectivity of this etchant is only about 200:1 for PSG:nitride. This selectivity may not be adequate in the manufacturing of certain devices (e.g., capacitors using low temperature nitrides to mitigate thermal budgets). Additionally, the etchant has a relatively low selectivity to polysilicon and TiN, and these materials can be negatively affected and/or damaged during the doped oxide etching process. Accordingly, there is a need to improve the etching processes used to etch doped oxides in the manufacture of microfeature devices.
The present invention is directed to methods for selectively etching doped oxides, for example, in the formation of double-sided container capacitors. An embodiment of one such method for etching material on a microfeature workpiece includes providing a microfeature workpiece including a doped oxide layer and a nitride layer adjacent to the doped oxide layer. The method includes selectively etching the doped oxide layer with an etchant comprising deionized water and HF (DI:HF) and an acid to provide a pH of the etchant such that the etchant includes (a) a selectivity of PSG to nitride of greater than 250:1, and (b) an etch rate through PSG of greater than 9,000 Å/minute.
In several embodiments, the etchant can include DI:HF and nitric acid (HNO3) having a ratio of DI to HF to HNO3 of about 2:1:X to about 100:1:X. The value X can vary from about 0.0001 to 5. More particularly, the ratio of DI to HF to HNO3 can be about 2:1:X to 30:1:X, where X varies from approximately 0.5-3.0. In other embodiments, the etchant can also include DI:HF and hydrochloric acid (HCl), DI:HF and sulphuric acid (H2SO4), or DI:HF and phosphoric acid (H3PO4). The ratios of these chemistries can be approximately the same as the ratios for DI:HF:HNO3 described above.
Another embodiment is directed to a method for fabricating a microfeature device on a microfeature workpiece. The method includes providing a microfeature workpiece including (a) a doped oxide layer, and (b) a nitride material, a polysilicon material, and a TiN material proximate to the doped oxide layer. The method further includes removing substantially all the doped oxide layer with an etchant comprising DI:HF:HNO3. The etchant includes a ratio of DI to HF to HNO3 of 10:1:1.0-2.0 such that the etchant etches up to and generally not into the nitride, polysilicon, and TiN materials.
Still another embodiment is directed to a method for forming a capacitor on a microfeature workpiece. The workpiece includes a plurality of conductive plugs, a first nitride layer over the conductive plugs, a dielectric layer over the first nitride layer, and a second nitride layer over the dielectric layer. The method can include patterning and etching the second nitride layer to form a mask over the dielectric layer. The method continues by forming a plurality of openings in the dielectric layer using the mask. The dielectric layer includes a doped oxide material. The individual openings expose at least a portion of the individual conductive plugs. The method can then include depositing a first conductive layer in at least a portion of the individual openings and in electrical contact with the corresponding conductive plugs. The first conductive layer can include TiN. The method further includes depositing a second conductive layer over at least a portion of the first conductive layer in the individual openings. The second conductive layer can include polysilicon. The method continues by removing at least substantially all the dielectric layer from the workpiece with an etchant comprising DI:HF and an acid to provide a pH of the etchant such that the etchant includes (a) a selectivity of PSG to nitride of greater than 250:1, and (b) an etch rate through PSG of greater than 9,000 Å/minute.
Several specific details of the invention are set forth in the following description and in
The workpiece 100 includes a plurality of isolation regions 110 (e.g., shallow trench isolation (STI) structures and/or field oxide portions) in the substrate 102 and a plurality of active areas 112. The isolation regions 110 are shallow dielectric regions that electrically isolate the active areas 112. The active areas 112 can include doped or implanted materials that form source regions, drain regions, and other structures. The workpiece 100 further includes gate stacks 114 (shown schematically) formed on the substrate 102. The individual gate stacks 114 can include a gate dielectric layer (e.g., a gate oxide), one or more gate conductive layers (e.g., a conductive polysilicon layer and/or a silicide layer), and one or more dielectric caps (e.g., a silicon nitride layer). In alternative embodiments, the gate stacks 114 can have other configurations and/or include different materials.
The workpiece 100 also includes a first dielectric layer 120 on the substrate 102 and a plurality of conductive plugs 125 electrically coupled to corresponding active areas 112 in the substrate 102. The first dielectric layer 120 can include a doped oxide material, such as borophosphosilicate glass (BPSG), PSG, or another suitable dielectric material. The conductive plugs 125 can include a polysilicon material doped with impurities to enhance conductivity. In alternative embodiments, however, the conductive plugs 125 can be formed from other suitable conductive materials.
The workpiece 100 further includes a second dielectric layer 130 over the first dielectric layer 120 and the conductive plugs 125. The second dielectric layer 130 can include a layer of silicon nitride (Si3Ni4) that acts as an etch-stop layer for subsequent etching processes, as described in more detail below. A third dielectric layer 132 is over at least a portion of the second dielectric layer 130. The third dielectric layer 132 is a relatively thick (e.g., approximately 10,000-15,000 Å) layer of doped oxide material (e.g., PSG or BPSG). A fourth dielectric layer 134 is over the third dielectric layer 132 and patterned to form openings 135 over at least a portion of the conductive plugs 125. The fourth dielectric layer 134 can include a layer of silicon nitride and/or other suitable materials.
The workpiece 100 also includes a bit line plug 140 extending through at least a portion of the third dielectric layer 132 and in electrical contact with a corresponding conductive plug 125. The bit line plug 140 can include a polysilicon material or another suitable conductive material. The bit line plug 140 includes a fifth dielectric layer 144 (e.g., a layer of silicon nitride) covering the sidewalls of the plug 140 to electrically insulate the bit line plug 140 from other components of the capacitor. In other embodiments, the workpiece 100 may include additional structures or layers, or the workpiece 100 may not include one or more of the layers of materials described above.
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The third etching process can use an etchant including DI, HF and HNO3 to selectively remove the doped oxide material of the third dielectric layer 132 without negatively affecting the surrounding materials (e.g., nitride, polysilicon, and TiN) on the workpiece 100. As discussed in more detail below, the proper ratio of materials in the etchant can (a) increase the etch rate of doped oxide material, and (b) decrease the etch rate of nitride (i.e., increase the PSG:nitride and BPSG:nitride selectivity). Instead of using HNO3, alternative embodiments can include HCl, H2SO4, H3PO4, or another suitable acid that lowers the pH of the etchant below about 2.0 and shifts the equilibrium of the etchant solution from generally associated HF toward more undissociated HF. This shift in equilibrium can significantly increase the selectivity of the etchant (e.g., up to about 400:1 for PSG:nitride). The additives in the mixture should be controlled such that the etchant retains a high selectivity toward polysilicon and TiN.
The etchant can include a ratio of DI to HF to HNO3 of about 2:1:X to about 100:1:X. The value X can vary from about 0.0001 to 5. More particularly, the ratio of DI to HF to HNO3 can be about 2:1:X to 30:1:X, where X varies from approximately 0.5-3.0. The ratios of the alternative etchant chemistries (e.g., DI:HF:HCl, DI:HF:H2SO4, or DI:HF:H3PO4) can be approximately the same as the ratios for DI:HF:HNO3.
Although the ratio of DI:HF can be lower than 10 in several embodiments, if the ratio becomes too low the etch rate can become too high and difficult to control. Additionally, the ratio of HF:HNO3 can be higher than 2.0 in several embodiments, but above this value the etchant becomes significantly less selective to polysilicon and TiN and can etch back too much of these layers on the workpiece 100. A ratio of HF:HNO3 of approximately 2.0 or less, however, keeps the attack rate of the etchant DI:HF:HNO3 to a about 4-5 Å/minute for the polysilicon and/or TiN materials. In other embodiments where the polysilicon and/or TiN layers are relatively thick, the ratio of HF:HNO3 can generally be increased above 2.0 without adverse effects.
One feature of the methods described above for etching doped oxide materials is that the selectivity and etch rate of the etching process can be significantly improved as compared with conventional etching processes. For example, the etchant DI:HF:HNO3 is expected to provide over a 100% increase in selectivity as compared with conventional etching processes using 10:1 HF. The above-described methods also provide a significant improvement in selectivity as compared with etching processes using ac-HF, which has a selectivity of PSG:nitride of less than 250:1. The increased selectivity of the etchants described above can accordingly allow for higher-density components in microfeature devices and increased precision during manufacturing of the devices.
Another advantage of this feature is that fabrication processes utilizing the above-described etchants can be significantly more efficient as compared with conventional processes. Etching processes including acetic acid, for example, generally have etch rates of about 2,000 Å/minute. Extremely slow etching processes can accordingly significantly reduce throughput of processed devices. In contrast, etch rates using the above-disclosed etchants can be over approximately 9,000 Å/minute. For example, the etchant DI:HF:HNO3 can provide over a 25% increase in etch rate as compared with conventional etching processes using 10:1 HF. The improvements in etch rate using the above-described methods as compared with conventional processes can significantly increase throughput of processed devices.
Still another feature of the methods described above for etching doped oxide materials is that the etchants described above generally include little or no acetic acid. One advantage of this feature is that fabrication processes involving the etching of doped oxide materials in accordance with several embodiments of the present invention can be significantly less expensive than conventional processes that require acetic acid. Acetic acid is significantly more expensive than other acidic materials, and the safety equipment and procedures necessarily required when using acetic acid (e.g., because of its low flash point) further increase processing costs.
For the foregoing, it will be appreciated that specific embodiments of the invention have been described herein for purposes of illustration, but that various modifications may be made without deviating from the invention. For example, additional acid solutions may be used with the DI:HF solution to lower the pH of the solution and shift the equilibrium of the etchant from associated HF toward more undissociated HF. Aspects of the invention described in the context of particular embodiments may be combined or eliminated in other embodiments. Further, while advantages associated with certain embodiments of the invention have been described in the context of those embodiments, other embodiments may also exhibit such advantages, and not all embodiments need necessarily exhibit such advantages to fall within the scope of the invention. Accordingly, the invention is not limited, except as by the appended claims.
|Cited Patent
|Filing date
|Publication date
|May 10, 1971
|Oct 23, 1973
|Hitachi Ltd
|Method of making semiconductor devices
|Feb 13, 1981
|Oct 19, 1982
|Fujitsu Limited
|Process for forming contact through holes
|Aug 31, 1984
|Jan 9, 1990
|Texas Instruments Incorporated
|Method for forming contacts through a thick oxide layer on a semiconductive device
|Mar 11, 1992
|Dec 8, 1992
|Intel Corporation
|Electroless deposition for IC fabrication
|Mar 6, 1992
|Apr 5, 1994
|Micron Technology, Inc.
|Method of selectively etching silicon dioxide dielectric layers on semiconductor wafers
|Apr 26, 1994
|Jul 25, 1995
|Industrial Technology Research Institute
|Dram cell process having elk horn shaped capacitor
|Jun 1, 1995
|Apr 1, 1997
|International Business Machines Corporation
|Shallow trench isolation with self aligned PSG layer
|Jul 24, 1998
|Jun 29, 1999
|Taiwan Semiconductor Manufacturing Company, Ltd.
|Method for fabricating capacitor-over-bit line (COB) dynamic random access memory (DRAM) using tungsten landing plug contacts and Ti/TiN bit lines
|Sep 4, 1998
|Jan 18, 2000
|Taiwan Semiconductor Manufacturing Company, Ltd.
|Method for improving the yield on dynamic random access memory (DRAM) with cylindrical capacitor structures
|May 2, 2000
|Oct 15, 2002
|Samsung Electronics Co., Ltd.
|Method of forming a capacitor lower electrode using a CMP stopping layer
|May 10, 2000
|Jan 14, 2003
|Micron Technology, Inc.
|Double sided container capacitor for DRAM cell array and method of forming same
|Apr 8, 2002
|Jul 29, 2003
|Micron Technology, Inc.
|Double sided container capacitor for DRAM cell array and method of forming same
|Nov 26, 2002
|Aug 19, 2003
|Samsung Electronics Co., Ltd.
|Methods of fabricating cylinder-type capacitors for semiconductor devices using a hard mask and a mold layer
|Sep 14, 2000
|Oct 12, 2004
|Cypress Semiconductor Corp.
|Method of forming self aligned contacts
|Mar 30, 2001
|Oct 3, 2002
|Ting Chien
|Plasma etching of dielectric layer with selectivity to stop layer
|May 14, 2001
|Nov 14, 2002
|Deboer Scott J.
|Double sided container process used during the manufacture of a semiconductor device
|Dec 30, 2004
|Aug 4, 2005
|Samsung Electronics Co., Ltd.
|Method for forming a capacitor for use in a semiconductor device
|Jun 17, 2005
|Mar 2, 2006
|Shea Kevin R
|Selective etching of oxides to metal nitrides and metal oxides
|Sep 1, 2005
|Mar 1, 2007
|Micron Technology, Inc.
|Methods for etching doped oxides in the manufacture of microfeature devices
|Mar 1, 2007
|Jun 28, 2007
|Micron Technology, Inc.
|Etch Compositions and Methods of Processing a Substrate
|Feb 24, 2006
|Aug 30, 2007
|Ki-Jeong Lee
|Cleaning composition for removing impurities and method of removing impurities using the same
|U.S. Classification
|438/381, 438/397, 438/244, 438/689
|International Classification
|Cooperative Classification
|European Classification
|Feb 26, 2014
|Fee payment
Year of fee payment: 4
|May 12, 2016
Owner name: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGEN
Free format text: SECURITY INTEREST;ASSIGNOR:MICRON TECHNOLOGY, INC.;REEL/FRAME:038669/0001
Effective date: 20160426
|Jun 2, 2016
Owner name: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL
Free format text: PATENT SECURITY AGREEMENT;ASSIGNOR:MICRON TECHNOLOGY, INC.;REEL/FRAME:038954/0001
Effective date: 20160426


text:
First off... the law which goes into effect today only impacts new bank customers.
If you haven't changed banks... it won't matter to you until August 15th... The sign up deadline.
Until then your bank will probably encourage you to sign up for overdraft protection.
I know my bank displays a message about it everytime I use the ATM.
Banks will tell you... sign up for overdraft protection. That way if you try to use your debit card to buy a cup of coffee or make a cash withdrawl, your card won't be denied if you don't have enough money in your account.
But financial expert Mandy Walker with Consumer Reports says... Don't do it!
Mandy says, "We're suggesting that people do not opt-in... basically do nothing... but do other things instead that will protect you."
Mandy says banks make billions of dollars from overdraft protection fees which average about $35 a whack.
And get this... a recent banking study found only 14% of all debit card users have this problem. In fact, they account for 93% of all overdraft fees.
Mandy's advice... protect yourself for free by signing up for online banking. That way you can check your account before you use your card.
Or ask your bank to set up an alert... where it sends you an email or text message whenever your account's low on funds.
Another option... connect your card to your savings account. That way if your checking account's dry, your debit card can pull from your savings account. There may be a charge for that... but Mandy says it's much cheaper than the opt-in fee.
Mandy says, "That will still cost you a fee, but it's a lot less... it usually ranges from $10 to $15."
The best advice... always try to keep a $100 buffer in your account so you never have to worry. And don't automatically assume that a deposit you made in the morning will cover a debit purchase you make later in the day.
Opt-in overdraft protection has nothing to do with the checks you write.
It only applies to the charges and cash withdrawls you make with your debit card.

subset: commoncrawl


text: Clean Energy Fuels Content on this page requires a newer version of Adobe Flash Player. Clean Energy Fuels ( CLNE), together with its wholly owned subsidiaries, is engaged in the business of selling natural gas fueling solutions to its customers, primarily in the U.S. and Canada. The stock is trading up 3.5% at $15.49 in recent trading. Today's Volume: 2.4 million Average Volume: 1 million Volume % Change: 283% Shares of CLNE are jumping to the upside today after the company said it signed a strategic joint marketing and fueling agreement with Navistar International (NAV). From a technical standpoint, CLNE has started to trigger a breakout trade today now that the stock has cleared some near-term overhead resistance at $15.40 with monster volume. Market players should continue to look for long-biased trades in CLNE as long as the stock can continue to trend above $14.47 and $15.40. Some potential targets if those breakout levels hold are $16.50 to $17.50 in the very near future. Prev 1 of 8 Next


text:
Take a look at how 'No Man's Sky' handles combat
Curious about what 'fantasy violence' means? Wait no more.
PSVR's 'cinematic mode' boasts a virtual 226-inch screen
Sony says that size is akin to sitting front row at a movie theater.
The new 'Overwatch' hero is causing all kinds of trouble
Healing sniper Ana is out on PC, and she's wreaking all kinds of havoc.
Original 'Dead Rising' will shamble on to PC, PS4 and Xbox One
What form it'll take when it launches this fall is anyone's guess.
Gaming headset review roundup: Five options, one favorite
The Astro A30 is versatile and offers great sound quality, to boot.
Ben Heck tears down the legendary Nintendo PlayStation
You now have a good idea of what the ill-fated game console was like on the inside.
Watch the Evo 2016 fighting game championships right here!
It's an entire weekend of virtual fisticuffs.
Fight offline with friends in new 'Star Wars Battlefront' mode
The 'Skirmish' game-type makes bot matches of Walker Assault and Fighter Squadron on July 20th.
NPD finally adds digital tracking to its game sales reports
It's time for a whole new dimension of squabbling over what sold more.


text:
Vt. under frost advisoryThe Associated Press | September 05,2013BURLINGTON - Farmers and gardeners may want to cover their crops when temperatures are expected to dip into the 30s in parts of Vermont.
The National Weather Service has issued a frost advisory for the state.
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The Weather Service says the frost may damage sensitive plants and crops.MORE IN This Just InPARIS You cant put a guard in every church and patrol every beach. Full StoryA New Hampshire man has been arrested for possession of heroin following a traffic stop on I-91... Full StoryGROTON State police have arrested a Groton man for a drug-related death that occurred at his... Full Story
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21/06/2016 The State of Ringcraft etc.
Lots going on at the moment. I'm playing with my new microphone and throwing out the occasional video on my Youtube channel (make sure to subscribe to that I suppose). I recently published videos entitled: Some Quick Thoughts on Stephen Thompson, Pressure Point Techniques That Could Save Your Life, and A Little Bit of Buddy McGirt. Really I'm just twiddling my thumbs on the video front until Vice decide to release Ringcraft IV, which has been ready since January. If they decide Fightland is done with videos I'll get a new channel and a Patreon page and decide how to proceed from there. I would love to team up with an animator and do some history stuff or make something similar to Luke Thomas' excellent Monday Morning Analyst.
At any rate I'm having a lot more fun doing voice overs and scripts nowadays. It still takes me far too long to record something I actually like but I'm getting there. I even started doing some research to have a bash at writing a screenplay combining my love of fight history and titillating, violent schlock.
Something which caught my eye this week was BJJ Scout's return to business. He is putting together a multi-part series on the guard passing of Demian Maia and it is well worth your time.
What else happened since my last blog? Well Muhammad Ali and Kimbo Slice died, which was quite upsetting. And then Michael Bisping became UFC middleweight champion on short notice which–whether you like him or not–is pretty inspiring. Oh and Brock Lesnar is coming back for a one off fight to save UFC 200 which was pretty much unthinkable until the moment it was announced.
We've got three huge events coming up back-to-back-to-back, so the next few weeks will be fairly hectic. Apologies that I don't have any big updates regarding books or Ringcraft right now, but thanks for all your support and patience.
24/02/2016 Updating Blog
Apologies for the extremely long time between updates. The last time I wrote an entry on here was November of 2014! A lot has happened between then and now. Hundreds of articles, a couple of injuries, and a nomination for MMA Journalist of the Year. Overall I can't complain.
Also, Fightland got my webseries off the ground! You can go and watch that in the Videos tab up the top there. We are three episodes in at the time of writing, with a fourth on the horizon. The original plan was for 'How to Enjoy a Fight' but we ended up going with Jack Slack's Ringcraft. Ringcraft just sounded much snappier.
At any rate, I'm doing a bit of a spring clean of Fights Gone By. With all the writing I do for Fightland I struggle to post my own articles here as well. I wanted to do that for a while but it just never happened. Instead I have decided to use the Articles and Analysis section to compile the features which I have been truly proud of writing.
Most of the gifs and videos in the Techniques and Principles section from the first incarnation of Fights Gone By have expired, so I have replaced that section of the site with a Resources section which I will add notable analysts, writers and podcasters to as we go along.
Books is still books, where you can pick up the old technical studies I wrote a few years back. If you want to check out my new ebook, Finding the Art, you can pick it up on Amazon.
Hopefully over the coming weeks I can start to update this site and share some of the wonderful work and ideas I have encountered in the martial arts world.


text:
Etihad Airways Recruitment Events JULY 2016 – Cabin Crew
France, Paris
Netherlands, Amsterdam
Anytime between 08:00 AM – 06:00 PM
CV drop off
Park Inn Hotel, Amsterdam Airport Schiphol,
Beechavenue 142-160,
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Netherlands, Amsterdam
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U.A.E., Abu Dhabi
Ukraine, Kiev
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U.S.A., New York
If your country is not listed above, create an online application. If shortlisted, you will be invited to participate in the next available recruitment event in your country or in a nearby location of your choice.
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For the CV drop off, bring with you the following:
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Etihad Airways is also recruiting Food and Beverage Managers and In-flight Chefs.Both of these positions are ideal for candidates who want to combine a cabin crew lifestyle with their expertise in the Food and Beverage Field. For all recruitment events, refer to Etihad Careers Website.
As you prepare for a recruitment event, build a great CV, fill in a perfect online application and learn how to dress for your assessment day. If you want to be one step ahead of everybody else, practice for the group exercise and know what to expect from the final interview. Don't forget about the 9 mistakes to avoid during an assessment day.


text:
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Sams Teach Yourself C++ for Linux in 21 Days Paperback – Apr 21 2000
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Sams Teach Yourself C++ Programming for Linux in 21 Days teaches you the C++ programming language using the Linux operating system. You will gain a thorough understanding of the basics of C++ programming from a Linux perspective. The Bonus Week includes topics such as XWindows, KDE with QT toolkit, APE Class Library, and Real -time Middleware.
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Jesse Liberty is the author of WebClasses from Scratch, as well as a dozen other books on Web applications development, C++, and object-oriented programming. Jesse is the president of Liberty Associates, Inc., where he provides custom Web applications development, training, mentoring, and consulting. He is a former vice president of electronic delivery for Citibank and a distinguished software engineer at AT&T. Jesse also serves as the series editor of Que's Programming from Scratch books. http://www.LibertyAssociates.com.
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The book is not really a "21 day" course, but rather a course made up of 21 units. Some units are too big to tackle in one day, such as the chapters on references and error-handling, unless one has 8 hours to dedicate to this. I'd say three months is a reasonable amount of time to complete this book.
When this book came out, in 1999, the K Desktop Environment (KDE), programmed in C++, was the most popular desktop and thus budding programmers could find plenty of code to work with and improve. In the years since, however, the GNOME desktop, programmed in C, has gained ascendency among power users, and is now the default in many distributions. So, learning C++ on Linux nowadays as a first step in programming gives one very little to work with, as C is the primary language. While in many operating systems one doesn't have to learn C before C++, in Linux it is almost essential because the kernel, most if not all GNU software, and GNOME programs are all in C. So, for the beginning Linux programmer I'd advise first going through Sam's C FOR LINUX PROGRAMMING IN 21 DAYS. Afterward, one could use this book, or ideally a more Linux-centric book, to reap the object-oriented benefits of C++.Read more ›
There is plenty here for the beginning programmer. The authors lead the newbie right up from "what is a program," "what is a variable," and "what is a function" to the most advanced concepts of the language.
The section on object oriented design was both clear and well-illustrated. I enjoyed the authors' sense of humor and professional perspective. I also enjoyed the simple (but rare) illustration of how to use ctags with vi. That bonus was worth the price of the book right there! The tips on coding style and inclusion guards were other gems.
There is plenty more in this book to keep me growing. Sections covering namespaces, "catch," "throw," exceptions, and the Standard Template Library will keep me reading. These authors are truly the gurus' gurus.
There are a few down sides to this book, though. One is that it is quite long and requires a lot of time. Also, some of the later chapters are more "this is neat" rather than "How to..." in nature without much detail (but these are "bonus" chapters, and things like GUI programing and system programming could't reasonably be explain in any one chapter). Lastly, the book leans a little too much on classes and objects, and doesn't say much about commonly used standard function; I could count the number of pages on that topic on one hand, and it really just says they're good and give one table listing a small number. Unless you get reference specifically geared toward functions or a book on standard C you could very easily end up inventing the wheel a lot.
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It explain a lot ainsi C++ and C++ basics. The linux particularity side is explained pretty good but more of it and less C++ basics would have be good.Published on March 9 2013 by ElecTrick27
This book is full of mistakes. It also begins by teaching you to program one way, and then tells you that this is wrong. Read morePublished on June 7 2003
C++ for Linux provides sound fundamental concepts for someone new to C++. This is also a good reference book for programming in C++. Read morePublished on Nov. 6 2000
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In Angel's Weed (also: "Is Sydney Dead?"), Consort Song For Voice & 4 Viols: In Angel's Weed
Features of This Trackan overall compositional virtuosity
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CHNS Daily Ramp Status Report
Click Here
NPS Weekly Resource Management Report
Previous Reports
NPS Weekly Table of Miles Open/Closed
Previous Reports
NPS conducts two traffic checkpoints at Hatteras Island ramps
In response to numerous incidences of traffic safety violations on the roads and beaches of Cape Hatteras National Seashore, National Park Service rangers and a deputy from the Dare County Sheriff's Office conducted two traffic safety checkpoints at Ramp 49 in Frisco and Ramp 55 in Hatteras village on Saturday, July 23.
Read more
Cape Point reopens to ORVs and pedestrians
Outer Banks Group Superintendent David Hallac announced today that access to Cape Point, along the Cape Hatteras National Seashore beach from Ramps 43 and 44, has reopened for both off-road vehicles and pedestrians.
Read more
NPS will offer sea turtle nest excavation programs
Cape Hatteras National Seashore is offering park visitors an opportunity to observe excavations of recently hatched sea turtle nests during the months of August and September, 2016. An "excavation" is the process completed by biologists to document what remains in the nest after a natural hatch has occurred.
Read more
A conversation with the seashore superintendent
David Hallac, superintendent of the Cape Hatteras National Seashore, was the guest for the latest edition of the Radio Hatteras interview show, "To the Point," on Sunday, July 17. Among the topics that Hallac addressed in the interview were flooding in the areas of Cape Point and Frisco, bird and turtle nesting, and modified buffers.
Read more
Sea turtle nest sitters learn the ropes in training session
A crowded room of both seasoned and new volunteers turned out in Buxton for the first of two sea turtle nest watch training programs on Monday evening, July 11. The Nest Watch Program is manned by community members and long-term vacationers who want to help protect, monitor, and inform the public about upcoming turtle nest hatchings.
But one of the biggest draws for many volunteers, besides the ability to provide essential help in protecting one of the island's favorite part-time residents, is the real probability of seeing a sea turtle hatching up-close and personal.
Read more
Ramp 49 in Frisco is passable for ORVs
The National Park Service maintenance staff members worked on the still flooded Ramp 49 in Frisco today, and by the end of the day, it was passable for off-road vehicles.
Read more
Flooded ramp situation in Buxton, Frisco improves
The flooding situation at the Cape Hatteras National Seashore off-road vehicle ramps has improved since back-to-back Tropical Storms Bonnie and Colin dumped record rainfall on Hatteras Island on Memorial Day and into the first week in June. However -- going into the July 4 holiday weekend -- standing water is still deep on Ramps 44 in Buxton and is especially problematic at Ramp 49 in Frisco.
Read more
Seashore launches multi-agency approach to stormwater issues
Persistent stormwater drainage issues in Cape Hatteras National Seashore between Cape Point and Frisco will be addressed in a cooperative arrangement with federal and state agencies to determine how to effectively manage the hydrology in the wetlands around the popular beach area.
"We're going to invite every state and federal partner and we'll be looking at a variety of alternatives," said National Park Service Outer Banks Group Superintendent David Hallac.
Read more
New off-road vehicle ramp 63 opens on Ocracoke Island
The Cape Hatteras National Seashore's newest off-road vehicle ramp, Ramp 63 on Ocracoke Island, is now open. The new ramp is located about three miles south of the Ferry Docks.
Read more
A day in the life of a National Park Service biotech
It's a slightly overcast Wednesday afternoon, and National Park Service lead biological science technician William Thompson is stepping into his remarkably clean truck, navigating the big pools of waters that have amassed at Ramp 43, and is heading out to Cape Point to check on the day's birding activity.
And this time of year, when the nesting season is arguably at its peak, there's definitely a lot to see.
Read more
New study shows extent of light pollution across the night sky
National parks offer some of our nation's best views of the cosmos. A fundamental new work, The New World Atlas of Artificial Sky Brightness, significantly expands knowledge of light pollution and its impact on the night sky. The atlas, published last week by Science Advances, is the work of an international team including National Park Service scientist Dan Duriscoe.
Read more
Back-to-back storms have little impact on nests in the seashore
The two back-to-back storms that drenched the islands with rain had little impact on the established bird and turtle nests along the Cape Hatteras National Seashore, according to the National Park Service.
Read more
Visitors reminded that drones are banned on the seashore
As the temperatures heat up and more and more visitors flock to the islands, the National Park Service is noticing an uptick in the number of drones that are making an illegal appearance along the Cape Hatteras National Seashore.
Drones are prohibited throughout the national seashore -- on all NPS grounds and beaches - -which includes the lighthouses and the surrounding area. However, it seems that not everyone is aware of or following the rules.
Read more
Cape Point closes to vehicle and pedestrian access
The National Park Service this morning closed pedestrian and off-road vehicle access to Cape Point because of breeding colonial waterbirds, including least terns, common terns, and black skimmers.
Read more
NPS will offer full-moon Cape Hatteras Lighthouse tours through the summer
Grab your flashlight and experience a lighthouse at night by joining the National Park Service on a Full Moon Tour of the Cape Hatteras Lighthouse. Hear stories of keepers of old, view the working light close up in the lantern room, and catch the reflection off the Atlantic Ocean of the newly-risen full moon as you stand on the lighthouse balcony.
Read more
NPS campground season will be extended until Nov. 28
The season will be extended for all four campgrounds in the Cape Hatteras National Seashore this season. The campgrounds -- Oregon Inlet, Cape Point, Frisco, and Ocracoke -- will open April 15, 2016 and will remain open until Nov. 28.
The campgrounds have usually opened in April, but have closed anywhere from Labor Day -- for Cape Point -- to the end of October for Ocracoke. Frisco and Oregon Inlet have closed around Columbus Day in past years.
Read more
Park Service makes it easier, cheaper to get ORV permit online
Cape Hatteras National Seashore officials have announced that they are making changes in how and where the seashore issues its off-road vehicle permits -- changes that will make it easier and cheaper for visitors to get their permits online.
"The changes are being made to increase user convenience, provide new options for park visitors wishing to purchase an ORV permit, and increase efficiency by reducing the cost associated with collecting permit fees," the Park Service said in a news release.
Read more
Lighthouses will be open for climbing from April 15 - Oct. 10
The Bodie Island and Cape Hatteras Lighthouses will be open for climbing this year from Friday, April 15, through Monday, Oct. 10.
Ticket sales begin daily at 9 a.m. with the last tickets sold at 4:30 p.m. at each site.
Climbing tickets are $8 for adults and $4 for senior citizens (62 or older), children 11 years of age and under, and those holding a National Parks and Federal Recreation Lands Access Pass. Tickets are available on a first-come, first-served basis and can be purchased in-person at the site only on the day of the climb. There are no advance ticket sales.
Read more
Click Here To View 2015 Archived Beach Access Information
Click Here To View 2014 Archived Beach Access Information
Click Here To View 2013 Archived Beach Access Information
Click Here To View 2012 Archived Beach Access Information
Click Here To View 2011 Archived Beach Access Information
Click Here To View 2010 Archived Beach Access Information
Click Here To View 2009 Archived Beach Access Information
Click Here To View 2008 Archived Beach Access Information


text:
Sacred Space: The Quest for Transcendence in Science Fiction Film and Television
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Product Information
|Format: Paperback
Number of Pages: 326
Vendor: Baylor Universtiy Press
Publication Date: 2010
|Dimensions: 9.00 X 6.00 (inches)
Availability: In Stock
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Publisher's Description
As humans, it is our trust in something larger than ourselves that invests our lives with meaning and value. We hope that outside the boundaries of everyday living there lies something greater. As Doug Cowan argues, science fiction is the genre of possibility and hope, a principal canvas on which writers, artists, and filmmakers have sketched their visions of this transcendent potential for generations. In Sacred Space, he leads readers in a compelling exploration of how this transcendence is manifested in science-fiction cinema and television of today.
From the millennial dreams of a future bright with potential to the promise of evolution from some as-yet-undreamed engine of creation, science fiction's visions of transcendence animate the pages of Sacred Space. Drawing on the most popular examples--Star Wars, Star Trek, Battlestar Galactica, Babylon 5, and Stargate SG-1--as well as the lesser known but no less important, Cowan reveals the multivalent religious ideas present in this media. Why do these themes that consistently appear in science fiction matter? What do they reveal about the often ambivalent relationship between outer space and our spirits? Cowan insightfully shows how these films and shows express and reinforce culturally constructed conceptions of transcendent hope, and along the way provides a provocative reflection on what this ultimately says about our culture's worldviews, hopes, and fears.
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The Obamas added Bo, a Portuguese water dog, to their family last week. But the choice disappointed some advocates, who had hoped the first family would adopt from a shelter. Do you think the Obamas should have chosen a shelter dog?
Yes. 35% (5)
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Total votes: 14
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text:
I unfortunately don't own the world of Harry Potter. J. K. Rowling does.
Just a quick thanks to ZabuzasGirl, Maddiekats, xXMizz Alec VolturiXx, Shangu, angelvan105, The-Darkened Abyss, Vampyres 'R Me, taramegareader, DreamUnicorn247, EllieMasen, LittleDreamer13, ivvixxx, High Reacher, TheMidnightwolf15, twilightlover4life13, slytheringirl22, hungergamespettalover, SocietyKilledMe-WickedDaphne, PercyPotter36, shadowbella987, RandomPerson3. 14, PercyPotter36, and xxDignity.
To Guests:
Thank you. I tried to get people's reactions correct. That's also a good idea, to bring the Greengrass girls into the story, along with keeping my OCs in the story. (No, I haven't forgotten about them.) Maybe I'll wait a bit. Tracey Davis I might add into a different story. I haven't decided yet. And yes, Sirius will most likely meet Jessalyn officially this summer.
Romilda isn't just attracted to Harry. I would imagine she dislikes how popular Jessalyn is becoming, especially with the boys of the school and how close to Harry she is, regardless of the fact that they're siblings.
Now on with the story! :)
Chapter 50:
The Third Task
As the third task grew nearer, Jessalyn's nerves grew once again. "Jess, he'll be fine," Blaise said, sitting down at the lunch table across from her.
"I just have a bad feeling."
"Everything will be fine."
"Jess, your brother always comes out of these things relatively unharmed. Why should this one be any different?" Draco asked, sitting beside his girlfriend.
"I – I don't know. I just – I have a bad feeling. And – "
But she suddenly cut off, causing the boys to share a look. What she wasn't telling them was that Harry's nightmares had become more frequent lately.
"Jess, what aren't you telling us?" Blaise asked.
"Nothing you need to know. I promise," she said, ducking her head.
"Please relax. He'll be fine," he said once more.
She nodded, before rising. "I'll see you later," she said, squeezing her boyfriend's hand before leaving.
"What's she hiding?"
"I – I don't know. I would tell you if I did, you know that," Blaise replied. Draco groaned in frustration.
"Hello Alexander," Jessalyn said as she entered the almost empty classroom. The older boy looked up, smiling just a bit at her, putting down his book.
"How are you?" he asked warmly, standing up straight.
"I'm all right. And you?"
Alexander shrugged. "Ready to get started?"
She nodded, focusing on the pillow in front of her. Taking a deep breath, she closed her eyes, willing it to rise, whispering "Wingardium Levosia."
At first, nothing happened except for a slight shiver. Then, as if it held no weight at all, as if the laws of gravity didn't even apply, the pillow began to rise.
Alexander was amazed. She had only been working on this for about a month and a half. For her to be able to do this, especially at her age, was amazing.
"Jessalyn," he said quietly, so as not to startle her. Her eyes snapped open, and she gaped, noticing the floating pillow.
"You did it," he muttered proudly, coming over as she impressively set it down on the desk.
"That – that was unbelievable. Great job!" he said kindly. See? You aren't weak. In fact, you're rather powerful, he thought.
"Thank you," she replied, turning towards him, letting dark red hair hide her face.
"You've improved a lot. Shall we continue next year?" Alexander inquired, coming closer to her.
"Yes, please."
"Jessalyn. You're doing an amazing job. Don't feel upset please," he said then, concerned.
"I – I'm not. I'm just worried for Harry," she explained, and he nodded in sudden understanding.
"Thank you for doing this," she repeated suddenly, daring to look up at him.
"You're welcome. If you ever need anything, please don't hesitate to come to me."
She nodded. Then, without warning, he stepped closer, pulling the younger girl into a loose embrace, shocking Jessalyn.
"Have a good night," he said, breaking apart, flashing another smile before gathering his bag and leaving.
Shaking her head, Jessalyn retired to her dormitory for the evening.
The following night, Jessalyn only picked at her food at dinner, dreading what was to come.
As the enchanted ceiling overhead began to fade from blue to a dusky purple, Dumbledore rose to his feet at the staff table, and silence fell.
"Ladies and gentlemen, in five minutes' time, I will be asking you to make your way down to the Quidditch field for the third and final task of the Triwizard Tournament. Will the champions please follow Mr. Bagman down to the stadium now."
She gulped, watching with rapt attention as Harry left the Great Hall.
"Jess, he'll be fine," Blaise said, trying to assure her once more. She just nodded as slowly the rest of the student and parent population made their way to a configured Quidditch pitch and took their seats in the stands. Mr. Bagman stood in the center of the pitch and began to speak with a magically personified voice.
"Ladies and gentlemen, the third and final task of the Triwizard Tournament is about to begin! Let me remind you how the points currently stand! Tied in first place, with eighty-five points each - Mr. Cedric Diggory and Mr. Harry Potter, both of Hogwarts School!" The cheers and applause sent birds from the Forbidden Forest fluttering into the darkening sky. "In second place, with eighty points - Mr. Viktor Krum, of Durmstrang Institute!" More applause. "And in third place - Miss Fleur Delacour, of Beauxbatons Academy!"
She saw Harry look up briefly before Mr. Bagman blew the whistle and he disappeared into the tall, dark maze.
"Jessalyn," Draco said sharply, causing her to look at him.
"Please. He'll be okay. He always is."
She just nodded, not entirely convinced.
An uneasy silence fell over them when suddenly she hissed in pain, bending forward as a hand flew to her forehead. Her scar had just erupted in pain. The only time that had ever happened was during Harry's nightmares. So for her scar to be hurting now could only mean one thing – she had been right and something had gone horribly wrong.
"Jessalyn!" Draco exclaimed.
"I – I don't know," she replied through gritted teeth, hating that she was lying to him.
And suddenly she wasn't seeing the grounds of Hogwarts anymore. Suddenly she was seeing a graveyard. There were men cloaked in black with silver masks – Death Eaters she realized, recognizing them from the World Cup. Cedric Diggory lay on the ground, his eyes unseeing. He was dead, she realized. Murdered.
A rat–like man with a metal hand stood, almost in reverence of the mechanical part of his body.
And – she gasped. A pale skinned man, bald and seemingly having no nose stood before her. This had to be Lord Voldemort. She couldn't imagine anyone else looking like this. But how was he here – there? – and in a full body.
She couldn't make out what they were saying; it was all muffled. However, she could see the figures moving, and flashes of light. Her eyes widened as green light shot at her brother, colliding with a red jet stream. They made an arc of white and ghosts seemed to be floating from it.
Jessalyn winced as she heard Voldemort scream with anger, before her gaze flew upward as she sensed, rather than saw, her brother return. She felt faint and dizzy. Her scar burned still, like never before. Closing her eyes once more, she felt herself losing control of her own body, slipping away.
The young witch groggily awoke to see white dancing before her eyes. Reaching for her glasses, she noticed a large black dog stood growling across the room.. Was this Sirius Black? Harry had told her all about his godfather, including his animagi form. But if it was, why would he be growling at her?
Turning her head, she saw Draco standing awkwardly by her bed.
"Hey," she said quietly, catching his attention.
"Jess, what happened?"
"I – I still don't know. Can you tell me?"
"Diggory is dead. Apparently Moody was Barty Crouch Jr. in disguise under the Polyjuice Potion, and he's just received the Dementor's Kiss."
"What is that? I mean, it doesn't sound pleasant, but – "
" – it's not. A Dementor's Kiss is where a dementor comes and sucks the livlidhood out of a person's body. They're technically alive, but they become like a member of the living dead."
Jessalyn shuddered. "And Harry?"
"He's here," replied her boyfriend, pointing to a bed across the way. Beginning to sit up, she noticed her raging headache, but ignored it. Draco, seeing her hesitation, immediately came around to help steady her.
"Thank you," she said quietly. "But I'm going to go over there myself. I – I need to tell him something without you hearing. Sorry."
"It's – it's fine. I'll wait here." She nodded gratefully before carefully making her way to her brother's bedside.
"Harry – you're hurt!" she exclaimed, suddenly noticing a large, bleeding scar down the side of his arm.
"You're awake! What happened?"
"I – down boy. I'm his sister," she said, turning towards Sirius the Dog. He calmed, but didn't seem entirely convinced.
Hermione moved out of the way, so that she could sit down. "Thanks."
"Harry," she began again, lowering her voice. "I – I could see it all. I couldn't hear anything, but I saw almost all of it."
Harry paled. "Jess, I never meant – how did you even?"
"I think my scar is more like yours than we thought."
"I'm sorry you saw that. We'll – we'll figure it out over the summer."
"He's really back, isn't he?"
"Yes. He's really back."
She just nodded once, her gaze just as solemn as his.
"I – I'm still not feeling well. I can't seem to remember much, but – "
"Go back to your own bed and rest. I don't mind. I'll fill you in later."
She got up, but before she got any farther, Jessalyn wrapped her arms around her brother. "I'm glad you're safe," she whispered.
Shakily, Jessalyn returned to her own bed within the hospital. "Everything all right?"
"It's fine. I – please don't leave though. I – I don't think I can – "
"Don't worry about it. I won't leave. I promise," he replied softly, sitting on her bed.
"Thank you," she whispered.
"Drink this," he said, handing her a sleeping drought Madame Pomfrey had left for her. Making a face at the foul solution, before falling asleep against the soft pillows, Draco's hand clasped firmly in hers.
Thanks to all who are reading and enjoying this story. If you have any suggestions, (i.e. would like to see something happen, etc.) questions, or comments, please feel free to private message me. Thanks! ~ Leanora,


text:
Appart'City Toulouse Labège, Labege
- Free WiFi in lobby
Main amenities
- 162 smoke-free guestrooms
- Breakfast available
- Self parking
- Terrace
- 24-hour front desk
- Air conditioning
- Self-serve laundry
- Luggage storage
What's around
- Diagora Convention and Exhibition Center (0.3 mi / 0.4 km)
- Eglise Saint-Barthelemy (1.5 mi / 2.5 km)
- Maison Salvan (1.6 mi / 2.5 km)
- Cite de l'Espace (3.9 mi / 6.3 km)
- Musee des Augustins (6 mi / 9.7 km)
Appart'City Toulouse Labège, Labege
Hotel Info: 866-539-8117from $48
- Large Apartment
- Apartment
- Twin Studio
- Superior Double Studio
- Double Studio
Also popular with travelers from the USA
At a glance
Key facts
Hotel size
- This hotel has 162 rooms
- This hotel is arranged over 3 floors
- Check-in time starts at 3 PM
- Check-out time is 11 AM
Required at check in
- Credit card or cash deposit required
- Government-issued photo ID required
Travelling with others
- No cribs (infant beds)
- Pets allowed *
- Free WiFi in public areas
- WiFi and wired Internet access in rooms *
- Self parking *
Other information
- Smoke-free property
Nearby Three Star Labege hotels
In the hotel
- Continental breakfast daily (surcharge)
- 24-hour front desk
- Laundry facilities
- Luggage storage
- Elevator/lift
- Terrace
In the room
- Air conditioning
- Iron/ironing board (on request)
- Premium bedding
- Private bathroom
- Bathtub or shower
- Hair dryer (on request)
- Flat-screen TV
- Digital TV channels
- Desk
- WiFi (surcharge)
- Phone
- Refrigerator
- Microwave
- Kitchenette
- Cookware, dishware, and utensils
- Weekly housekeeping provided
Top Labege hotels
Recently reviewed hotels in Labege
- Hôtel des ArtsFrom
"Very nice staff and location. The room was small but very well appointed. Parking was about three blocks away, in an underground public car park. "May 31, 2016
- Hôtel Albert 1erFrom
"The atmosphere was a work in progress due to construction. The room (obviously recently remodeled) was very nice and quite comfortable. The location is great. My other experiences…"May 29, 2016
- Holiday Inn Express Toulouse AirportFrom
"Only one night but very comfortable and the staff were helpful and very pleasant."May 28, 2016
- ResidHotel Toulouse CentreFrom
"Only one night but it was great. Also very close to the metro so easy to get to from the train, and to the tram to the airport."May 28, 2016
Nearby hotels
Appart'City Toulouse Labège, Labege's small print
Also known as
- Appart City Toulouse Diagora Labege
- Appart'City Toulouse Labège
- Appart'City Toulouse Labège House
- Appart'City Toulouse Labège House Labege
- Appart'City Toulouse Labège Labege
Optional extras
Self parking costs EUR 3.00 per day
Weekly housekeeping is provided; fees apply for additional cleaning
Continental breakfast is offered for an extra charge of EUR 9.90 for adults and EUR 7.0 for children (approximately)
Pets are allowed for an extra charge of EUR 5 per pet, per day
WiFi is available in guestrooms for EUR 1.10 per day (rates may vary)
High-speed Internet access (wired) is available in guestrooms for EUR 1.10 per day (rates may vary)
We have included all charges provided to us by this hotel. However, charges can vary, for example, based on length of stay or the room you book.
Recent reviews
Good 3.6 /5 from 305 reviews
Awesome place! Excellent value for the money Clean rooms, easy access to city center
The shower head was broken
The apartment is well maintained, it was good to have a kitchenette. The parking is well controlled and the people are very kind.
It a Apartment mix with Local Resident & It not Cheap..
It was a bit tricky to find the hotel on our bikes from Canal du Midi but once we got there we cooked a pasta dinner and enjoyed a quiet evening. The room looked out to sports fields and the hotel was very close to a large shopping complex.
Is the description of this hotel not correct? Tell us


text:
Been a long day
Before I left home I spent a while in my backyard to make sure I'll remember the feeling of walking barefoot in the grass, the feeling of the sunshine on my face and of the wind in my hair. The feeling of being myself. I forgot this feeling. I don't remember.
I think what hurts the most is being so close but not close enough, having so much to say and now watching myself fade away. And never knowing what could have been.
So now I'm gonna smoke this one well hidden secret cigarette and then I'm gonna tell myself it's ok to give up. It's time to find some peace and fill my heart with it.
It's been a long day. It's been a long week.


text:
Top Definition
A wonderful girl who never fails to make you laugh. Likes to drink and get as much life as she can in the shortest amount of time possible. A bit of a slut, but still a sweetheart.
If anyone has an insane idea, it's Malora.
by Carisol April 14, 2011
Trending Now


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'; pd[120721] = '
Agreed, foam is your friend. For a first board, you want to go big, then as your surfing progresses, you can go smaller. Longboards are stable and catch waves easy. You say you're in great shape, but it is not the same as being in great surfing shape. I was a collegiate athlete in the best shape of my life when I started, and surfing kicked my arse. I saw fat old guys paddling circles around me.
\nSmall boards are harder to paddle and less stable to stand on
\nBig boards are easier to paddle and more stable to stand up on
\nI'm a big guy, 6-6 255 and I started on a 10-2 longboard but have progressed to surfing boards as short as 7'. All my boards are fat and wide (just like my women) to support my size though.
\nLike the previous poster said, surfing a board that is too small is frustrating and might lead to you quitting. Good luck.
Last edited by Kahuna Kai; Mar 10, 2012 at 05:11 PM.
'; pd[120722] = '
Mar 10, 2012, 05:17 PM
Senior Member
- Join Date
- Aug 2011
- Location
- chincoteague, va
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- 131
Don't get a 9' longboard... that's a huge misconception that length is where your learning is crutched. It's not. You'd be sitting in the water trying to get a huge log turned around and spending all your time just controlling where your boards pointed. Don't get a fish either. They require a certain type of riding style you definitely won't have off the bat. Get a 7'6 fun shape or an egg.
\nLook into a Channel Islands M13 or something similar (M13 might be a little pricey for a first board.) Id put you on a 7'6" ideally. Paddles well, catches waves well and you won't sacrifice too much stability.
'; pd[120734] = '
Mar 10, 2012, 09:23 PM
Junior Member
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- Dec 2011
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- 6
"Most of my boards are fat and wide, like my women"...hahahaha thats classic
'; pd[120723] = '
Mar 10, 2012, 05:51 PM
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- Jan 2012
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- Baltimore
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- 45
I agree with this last post. I have been surfing for about 20 years, but one of my good buddies didn't decide to pick it up until around age 30 (I am 34). Luckily, he was on vacation in the OBX with me and another friend who has been surfing for over 20 years. He got a chance to try a funboard, longboard and big guy shortboard over the course of a week and wound up purchasing a 7'2" funshape later that summer. He felt the longboard was too hard for him to control and felt more comfortable with the funshape. Although, now he wants to buy a longboard. We are all over6 feet tall and foam is our friend. Grovelling for waves sucks.
'; pd[120735] = '
Mar 10, 2012, 09:26 PM
- Join Date
- Jan 2009
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- milton delaware
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- 2,291
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- 272
Last edited by mitchell; Mar 10, 2012 at 09:32 PM.
'; pd[120736] = '
I think it really depends on what you want to surf. Just because you want to learn to surf, doesn't mean you ultimately need to surf a short board. I personally started out ona longboard, progressed shorter and went back to longboarding because I like it more. It is really your own personal preference. If you want to surf only shortboards in the future, start shorter. My brother did that and surfs a shortboard fairly well, yet he is clueless and intimidated by longboards which is silly.
'; pd[120740] = '
Mar 11, 2012, 12:38 AM
- Join Date
- Sep 2011
- Location
- East of AC
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- 76
I'm about your weight but shorter and my boards go from 6'5'' - 9'8''. I suggest going with a 7'8" fun board. I would start there,then decide if you want to go with a shortboard or maybe a longboard. One thing I would stay away from is big guy shortboards. All the ones I've tried were way to thick and wide. They turned like crap and just feel like junk.
'; pd[120755] = '
\nI'd say get a funboard and learn the basics, don't get too carried away with wanting a short board too quick - it might come back to haunt you.
'; pd[120757] = '
Mar 11, 2012, 01:01 PM
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- Crystal Coast,N.C.
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I'm your hieght and weight and you should listen to the foam is your friend comments. The more waves you catch the more you'll like surfing and you just arent going to do it starting on a shortboard. Ultimately yes.... the longboard will catch more waves than anything but if you are bent on starting smaller then I like to reccomend a round nose fish. The board pictured below is 6'8 x 21.5 x 2.75. It has a full outline and boxier rails and easily floats a 250 lb person. The tail is cut down and will turn much like a shortboard but it's a very stable platform for a noob like yourself. Get a custom made stick and you'll get exactly want you want and it will cost you less than buying from a shop. Remember you're a big guy and you need more glass under you than what a shop board has to offer. Hope this helps you out.
'; pd[120762] = '
Mar 11, 2012, 02:18 PM
Solid advice from Mitchell... If you've already decided to learn on a shortboard, and not a longboard, then get a hybrid or eggy type board. 7'+ is about right, too, but don't go longer than 7'6. If you don't know a local shaper, Challenger makes several models. The CI M13 or the CI Waterhog... an example of an eggier style hybrid... are also options, but the M13 is for bigger surf than you'll see in the summer outside of tropical swells.
\nYou want something that looks like this: http://www.wavejammer.com/surf/brds/shortbd095.shtml
\nor this: http://www.wavejammer.com/surf/brds/shortbd052.shtml
\nYou'll learn quickly that muscle isn't everything when it comes to catching waves. Position, timing, glide, and adjusting on the fly. You don't need a log to do that if you dedicate yourself and start with a board that floats you well.
Last edited by LBCrew; Mar 11, 2012 at 05:41 PM.
'; pd[120771] = '
Mar 11, 2012, 03:06 PM
Try a biscuit for your first board, they are expensive but worth it. Im starting out on a 7'2'' Channel Island biscuit, it has alot of foam and floats my fattass and is easier to stand up on than a shorter board. I have a 6'2'' Tuflite Biscuit as well, that is harder to learn on but will be my stepdown board. Go big! And Go thick too! My 7'2'' board is 3 1/8 inches thick.
'; pd[120772] = '
Mar 11, 2012, 03:45 PM
Senior Member
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- Jul 2008
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- Annapolis
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- 158
I can see that you're from Jersey, so i'm not familiar with the shops there, but I'd suggest going to a shop and talking with some knowlegeable guys there - they know about the breaks and which boards word best for them, and you can tell them the type of surfing you're interested in - old school (longer lines, longer boards) or modern styles (shorter boards, more maneuverable for cutbacks, quick turns, etc.) but MOST OF ALL - get a used board!!! It's cheaper, you could get better quality for $ than an expensive new board that you're going to grow out of (as you inprove!) Good luck!
'; pd[120790] = '
Mar 11, 2012, 11:46 PM
First off don't purchase a board, try renting first. A longboard, shortboard for a hour or more and then decide what you want to buy first. You will need at least a couple of different sizes boards for the variable conditions of the surf we get on the east coast along with the tide changes affecting the wave conditions. I'm 151 lb and have no more trouble turning a 9 ft longboard than a 6' 8" surfboard. You will ride a longboard more than a shortboard on the east coast. All i can say is, if you surf and have never surfed a longboard your missing a completely different type of surfing expierence. HANG TEN!!!
'; pd[120793] = '
surf em all! Longboards, shortboards, hybrids, and everything you can get your hands on. One of the comments above that mentioned getting started on a funboard if you have you mind made up to surf shortboards. That comment stuck with me.
I started on a longboard, and I love surfing longboards, but found that I enjoy surfing off the tail much more than noseriding and stepping up and down the board. I have to wonder perhaps if I had started on a funboard perhaps I would have progressed faster in the style of surfing I enjoy the most. Who knows, you have to accrue some time and experience in the water to know what you really like.
I know I weighed in already, and hope that you find this advice useful, but no matter what you do, make sure you get a really floaty board for your first. Also be sure to try longboarding and shortboarding because they all have their place given the conditions and the wave type that you're surfing and I believe that each type of board you ride teaches you something and makes you a better all around surfer.
One word of warning before you get started. Make sure you are ready to partake on the most rewarding, frustrating, fun, disappointing, fulfilling, and addicting activity ever. If you get bit by the bug, you will never be the same.
'; pd[120804] = '
Mar 12, 2012, 02:56 AM
- Join Date
- Dec 2008
- Posts
- 32
Go to your local shop and see how many used longboards they have than look at the number of shortboards.
Ask why are there so few used longboards for sale. Good surfers have a longboard in their quiver. Ask why?
It's easier to learn, paddle, and catch waves on a longboard and here on the right coast we generally have more
days when you can surf if you have a longboard available to you. Learn on a longboard and once you feel
more competent and able get a shortboard. Please learn appropriate behavior in the water irrespective of what type of board you buy.
'; pd[120810] = '
amen to that, read up on etiquette and safety
'; pd[120814] = '
Mar 12, 2012, 10:51 AM
I got my first longboard after 20 years of having shortboards only. I added the longboard to my quiver because I wanted to noseride. Without noseriding, I wouldn't be interested in longboards at all.
\nEverything a funboard can do, the right sized hybrid can do better.
'; pd[120821] = '
Mar 12, 2012, 01:06 PM
- Join Date
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- 3,164
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- 1
If your serious about learning to surf- don't waste your time with a 6'3 shortboard. seriously, just cause it looks cool- don't mean you'll be able to ride it if you have never stood up on a board before. specially at 200lbs! get a longboard- spend one summer learning, then get a 5 mil for the winter- then get your 6'3. Seriously...
And respect the other surfers- read up on surfing etiquette- and be yourself, don't 'try' to be a surfer... just be yourself... and did i mention to buy a longboard? you will have so much more fun
'; pd[120892] = '
Mar 13, 2012, 02:57 AM
Junior Member
- Join Date
- Mar 2012
- Posts
- 4
Thanks for the advice guys, its really a big help. Oh and as for the surf etiquette i completely understand that aspect of the sport. Ive been in lineups before and i would never want to be the douche bag who drops in on everyone. I also dont need to be getting my ass whooped by a bunch of locals haha.
'; pd[120895] = '
Mar 13, 2012, 03:09 AM
Junior Member
- Join Date
- Mar 2012
- Posts
- 4
\none last thing. can i get an opinion on this board, the guy told me hes bigger than be and it floats him very well.
'; pd[120898] = '
'; pd[120901] = '
Mar 13, 2012, 11:06 AM
Might float you, but not a good board to learn on. Personally, I'm not a fan of Anacrapa... which are basically inferior CI knockoffs. Merrick's shapes machine cut and poorly glassed, from my experiences doing repairs. I think $300 for a used one with "minor dings" is insane.
'; pd[120903] = '
Mar 13, 2012, 01:11 PM
- Join Date
- Aug 2010
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- Posts
- 3,164
- Images
- 1
\nBro- seriously- get a bigger board. listen to everyone who took their own time to reply to your question- they all said to get a bigger board- a longboard. I could be wrong, but I don't remember anyone replying saying to get a shortboard to learn. That board may float you better, but it will still be super squirelly for you. A long board will paddle easier- be more suitable for the east coast summers- get into waves way earlier- and much easier to pop up on and balance. You will have much more fun, and will not get frustrated, look like a kook or give up. Get the shortboard next summer. Or better yet- wait and rent a board the first few times that you go- get a shortboard, then try a longboard- and judge for yourself.
\nHere are some postings that I found in your area- great boards to start with:
\n http://norfolk.craigslist.org/spo/2899168709.html
\nplus the stomp pad on that board that you posted looks like its in the wrong position- should be further back- that will be a pain to move...
Last edited by walkingonh2o; Mar 13, 2012 at 01:14 PM.
'; pd[121160] = '
Mar 17, 2012, 02:19 AM
But the Stewart you won't be dissapointed. Great board easy turning.
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amen to that, read up on etiquette and safety


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His now-famous and much-loved blog, thesartorialist.com, is his showcase for the wonderful and varied sartorial tastes of real people across the globe. This book is a beautiful anthology of Scott?s favorite images, accompanied by his insightful commentary. It includes photographs of well-known fashion figures alongside people encountered on the street whose personal style and taste demand a closer look.
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After the enormous success of The Sartorialist, Scott Schuman is back with a completely new collection of beautiful images of the men and women who have caught his attention.
His much-loved blog, thesartorialist.com, remains one of the most-read in the fashion world and continues to grow in popularity as Scott travels further and more widely. This book emcompasses the diverse style and visual attitude of people as far afield as Japan, Korea, London, Milan, New York, Paris, and beyond.
In The Sartorialist: Closer, Scott Schuman looks deeper and with great breadth at human style, and the way it is expressed across the world. Always reacting to an inspirational moment, the images in his new book continue to reflect Scott's unique sensibility and vision.
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Scott Schuman started The Sartorialist simply to share photos of people on the street that he thought looked great. The blog now receives more than 14 million page views per month. His work resides in the permanent collections of the Victoria and Albert Museum and the Tokyo Metropolitan Museum of Photography and has been featured in GQ, Vogue Italia, Vogue Paris, and Interview. He lives in New York City with fellow style blogger Garance Dorandeacute;, with whom he was awarded the CFDA Media Award in 2012.
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While the camouflage jerseys the Eastside baseball team wore during "Duck Dynasty Night" Monday were new, the result wasn't as the Eagles picked up their 19th win.
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We're Listening! We want to hear from you. Send us your feedback. Tell us what we are doing right, what we can do better and what is on your Wish List. Fill in the attached form or call 604-507-6400 or 1-800-324-6747
So glad you dropped by to spend some time with us. Enjoy your online visit to learn more about KCU and how we can help you.
Our Mission
"To be the most successful Sikh Credit Union. To care about our community and contribute to Sikh education, culture and religion. To be an environmentally conscious and committed organization that is responsive to member-owners."
Community Service Awards
KCU COMMUNITY SERVICE AWARDS – CALL for NOMINATIONS
As part of our 30th anniversary celebrations, your credit union is proud to sponsor and champion the Community Service Awards to honour members of the community who have made outstanding contributions towards the enrichment of the lives of residents of the Lower Mainland.
As an engaged and active citizen, you are entitled to nominate any individual/business that meets the criteria listed in the five awards categories. This information is listed on our website (khalsacreditunion.ca) and copies may be obtained in any of our five branches. You don't have to be a member of Khalsa Credit Union to nominate someone or to receive a nomination.
Deadline for submissions – 5:00 PM, Monday, August 10, 2016
Download Nomination Form
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Khalsa Youth Loan
In this modern era a university education is a precursor to a successful career and financial security. However with the cost of an undergraduate degree running upwards to $67,000, that attainment is frequently accompanied by burdensome student loan debt. At KCU we want to help young people become productive members of society and their communities. Accordingly we have introduced Khalsa Youth Loan.
Get Your Share
We'll start by setting up an appointment for you to come in and open an account. In order to receive the $200 bonus, you'll need to set up a recurring, automatic payment or deposit in your personal account, or transfer your business chequing account.
Receive a $25 credit for each friend you refer who opens an account
The Registered Disability Savings Plan (RDSP) is a long-term savings plan to help Canadians with disabilities and their families save for the future. If member has RDSP, he/she may also be eligible for grants and bonds to help with his/her long-term savings.
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Credit Unions of Ontario