text:
|Publication number
|Publication type
|Application number
|Publication date
|Oct 28, 2008
|Filing date
|Mar 9, 2006
|Priority date
|Mar 19, 2004
|Fee status
|Also published as
|Publication number
|Jonathan J. Wierer, Jr., Michael R. Krames, John E. Epler
|Original Assignee
|Philips Lumileds Lighting Company, Llc
|Export Citation
|BiBTeX, EndNote, RefMan
|Patent Citations (50), Non-Patent Citations (44), Referenced by (14), Classifications (20), Legal Events (2)
|External Links: USPTO, USPTO Assignment, Espacenet
This application is a division of application Ser. No. 10/804,810, filed Mar. 19, 2004 and incorporated herein by reference.
1. Field of Invention
The present invention relates to semiconductor light emitting devices including photonic crystal structures.
2. Description of Related Art
Light emitting diodes ("LEDs") are technologically and economically advantageous solid state light sources. LEDs are capable of reliably providing light with high brightness, hence in the past decades they have come to play a critical role in numerous applications, including flat-panel displays, traffic lights, and optical communications. An LED includes a forward biased p-n junction. When driven by a current, electrons and holes are injected into the junction region, where they recombine and release their energy by emitting photons. The quality of an LED can be characterized, for example, by its extraction efficiency, which measures the intensity of the emitted light for a given number of photons generated within the LED chip. The extraction efficiency is limited, for example, by the emitted photons suffering multiple total internal reflections at the walls of the high refractive index semiconductor medium. As a result, the emitted photons do not escape into free space, leading to poor extraction efficiencies, typically less than 30%.
In the past thirty years, various approaches have been proposed to enhance the extraction efficiency of LEDs. The extraction efficiency can be increased, for example, by enlarging the spatial angle in which the emitted photons can escape by developing suitable geometries, including cubic, cylindrical, pyramidal, and dome like shapes. However, none of these geometries can entirely eliminate losses from total internal reflection.
A further source of loss is the reflection caused by the refractive index mismatch between the LED and the surrounding media. While such losses could be reduced with an anti-reflection coating, complete cancellation of reflection can be achieved only at a specific photon energy and one angle of incidence.
U.S. Pat. No. 5,955,749, entitled "Light Emitting Device Utilizing a Periodic Dielectric Structure," granted to J. Joannopoulos et al., describes an approach to the problem of enhancing the extraction efficiency. According to U.S. Pat. No. 5,955,749, a photonic crystal is created by forming a lattice of holes completely through the semiconductor layers of the light emitting diode. The lattice of holes creates a medium with a periodically modulated dielectric constant, affecting the way light propagates through the medium. The photons of the light emitting diode can be characterized by their spectrum or dispersion relation, describing the relation between the energy and the wavelength of the photons. The relationship may be plotted, yielding a photonic band diagram consisting of energy bands, or photonic bands, separated by band gaps. Though the photonic band diagram is analogous to the spectrum of electrons in crystalline lattices as expressed in an electronic band diagram, the photonic band diagram is unrelated to the electronic band diagram. When a photonic crystal is formed in an LED it affects how light propagates in the structure. Therefore if the proper lattice spacing is chosen, light that would otherwise have been trapped in the structure by total internal reflection can now escape, increasing the extraction of the LED. Also, alternative lattices can reduce the photon mode volume in the LED structure increasing the radiative rate or internal efficiency of the LED active layer.
In an effort to explore the usefulness of photonic crystals for light generation, U.S. Pat. No. 5,955,749 gives a partial description of a theoretical structure of a photonic crystal device.
U.S. Pat. No. 5,955,749 describes an n-doped layer, an active layer, a p-doped layer, and a lattice of holes formed in these layers. However, the device of U.S. Pat. No. 5,955,749 is not operational and therefore is not a LED. First, electrodes are not described, even though electrodes are needed for the successful operation of a photonic crystal LED ("PXLED"). Though the fabrication of electrodes in regular LEDs is known in the art, for PXLEDs neither the fabrication of electrodes, nor their influence on the operation of the PXLED is obvious. For example, suitably aligning the mask of the electrode layer with the lattice of holes may require new fabrication techniques. Also, electrodes are typically thought to reduce the extraction efficiency as they reflect a portion of the emitted photons back into the LED, and absorb another portion of the emitted light.
Second, U.S. Pat. No. 5,955,749 proposes fabricating photonic crystal light emitting devices from GaAs. GaAs is indeed a convenient and hence popular material for fabricating regular LEDs. However, it has a high surface recombination velocity of about 106 cm/sec as described, for example, by S. Tiwari in "Compound Semiconductor Devices Physics," Academic Press (1992). The surface recombination velocity expresses the rate of the recombination of electrons and holes on the surface of the diode. Electrons and holes are present in the junction region of the LED, originating from the n-doped layer and the p-doped layer, respectively. When electrons and holes recombine across the electronic band gap, the recombination energy is emitted in the form of photons and generates light. However, when electrons and holes recombine through intermediate electronic states in the electronic band gap, then the recombination energy is emitted in the form of heat instead of photons, reducing the light emission efficiency of the LED. In an ideal crystal there are no states in the electronic band gap. Also, in today's high purity semiconductor crystals there are very few states in the electronic band gap in the bulk material. However, on the surface of semiconductors typically there are a large number of surface states and defect states, many of them in the electronic band gap. Therefore, a large fraction of electrons and holes that are close to the surface will recombine through these surface and defect states. This surface recombination generates heat instead of light, considerably reducing the efficiency of the LED.
This problem does not result in a serious loss of efficiency for regular LED structures. However, PXLEDs include a large number of holes, thus PXLEDs have a much larger surface area than regular LEDs. Therefore, the surface recombination may be capable of reducing the efficiency of the PXLED below the efficiency of the same LED without the photonic crystal structure, making the formation of photonic crystal structure pointless. Since GaAs has a high surface recombination velocity, it is not a promising candidate for fabricating photonic crystal LEDs. The seriousness of the problem is reflected by the fact that so far, to Applicants' knowledge, no electrically operated LED with the photonic crystal through the active region has been reported in the literature that uses GaAs and claims an enhanced extraction, or internal, efficiency. In particular, U.S. Pat. No. 5,955,749 does not describe the successful operation of a photonic crystal LED. Also, U.S. Pat. No. 5,955,749 does not describe the influence of the photonic crystal on the emission process, which can affect the internal efficiency of the LED.
While photonic crystals are promising for light extraction for the reasons described above, there are problems with the design. There are several publications describing experiments on a lattice of holes having been formed in a slab of a semiconductor. An enhancement of the extraction rate at photon energies in the photonic band gap has been reported by R. K. Lee et al. in "Modified Spontaneous Emission From a Two-dimensional Photonic Bandgap Crystal Slab," in the Journal of the Optical Society of America B, vol. 17, page 1438 (2000). Lee et al. not only shows the extraction benefits of a photonic crystal in a light emitting design, but also shows that the photonic lattice can influence the spontaneous emission. However, Lee et al. do not show how to form and operate a light emitting device with this design. A photonic crystal LED can be formed from Lee et al.'s light emitting design by including electrodes. The addition of the electrodes, however, will substantially affect the extraction and the spontaneous emission of the LED. Since this effect is unknown, it cannot be disregarded in the design of a LED. Since the Lee et al. design does not include such electrodes, the overall characteristics of an LED formed from that design are unclear. This questions the usefulness of the design of Lee et al.
In accordance with embodiments of the device, a photonic crystal structure is formed in an n-type region of a III-nitride semiconductor structure including an active region sandwiched between an n-type region and a p-type region. A reflector is formed on a surface of the p-type region opposite the active region. In some embodiments, the growth substrate on which the n-type region, active region, and p-type region are grown is removed, in order to facilitate forming the photonic crystal in an n-type region of the device, and to facilitate forming the reflector on a surface of the p-type region underlying the photonic crystal. The photonic crystal and reflector form a resonant cavity, which may allow control of light emitted by the active region.
In PXLED 100 of
Active region 112 includes a junction region where electrons from n-type region 108 combine with holes of p-type region 116 and ideally emit energy in the form of photons. Active layer 112 may include a quantum well structure to optimize the generation of photons. Many different quantum well structures have been described, for example, by G. B. Stringfellow and M. George Craford in "High Brightness Light Emitting Diodes," published by the Associated Press in 1997. The photonic crystal of PXLED 100 of
In the device illustrated in
In accordance with embodiments of the invention, a photonic crystal is formed in an n-type layer of a III-nitride device attached to a host substrate and from which the growth substrate has been removed. Such devices may emit light between about 280 and about 650 nm and usually emit light between about 420 and about 550 nm.
FIGS. 13 and 14A-14D illustrate an alternative embodiment of the present invention.
Bonding the epitaxial layers of the device to a host substrate, then removing the growth substrate allows the photonic crystal structure of the device to be formed in an n-type region. Etching the photonic crystal structure in an n-type region rather than a p-type region avoids the type-conversion problem associated with p-type III-nitrides, described above. Also, vacancies introduced in the n-type region from etching do not affect the conductivity of the material. In addition, since the photonic structure in n-type region 108 is separated from p-type region 116 and active region 112, damage to these regions caused by etching the photonic structure is avoided. The exposed top n-type layer allows for formation of the photonic crystal proximal to the active region. In alternative embodiments where surface recombination is low the photonic crystal may penetrate the active region and p-type region.
Alternatively, rather than bonding the epitaxial layers to a host, then removing the growth substrate, a device with an exposed top n-type region may be formed by growing the p-type region first on a growth substrate, followed by an active region and n-type region. Ignoring the growth difficulties, this would present n-type layer on the surface just as in
The photonic crystal structure can include a periodic variation of the thickness of n-type region 108, with alternating maxima and minima. An example is a grating (one-dimensional lattice) or planar lattice of holes 122 (two-dimensional lattice). The lattice is characterized by the diameter of the holes, d, the lattice constant a, which measures the distance between the centers of nearest neighbor holes, the depth of the holes w, and the dielectric constant of the dielectric, disposed in the holes, εh. Parameters a, d, w, and εh influence the density of states of the bands, and in particular, the density of states at the band edges of the photonic crystal's spectrum. Parameters a, d, w, and εh thus influence the radiation pattern emitted by the device, and can be selected to enhance the extraction efficiency from the device. Alternatively, when the proper photonic crystal parameters are chosen, the radiation pattern of the emitted light can be narrowed, increasing the radiance of the LED. This is useful in applications where light at only specific angles is useful. In one embodiment, the photonic crystal parameters are chosen such that greater than 50% of radiation exiting the device is emitted in an exit cone defined by an angle of 45 degrees to an axis normal to a surface of the device.
Holes 122-i can be arranged to form triangular, square, hexagonal, honeycomb, or other well-known two-dimensional lattice types. In some embodiments, different lattice types are formed in different regions of the device. Holes 122-i can have circular, square, hexagonal, or other cross sections. In some embodiments, the lattice spacing a is between about 0.1 λ and about 10 λ, preferably between about 0.1 λ and about 4 λ, where λ is the wavelength in the device of light emitted by the active region. In some embodiments, holes 122 may have a diameter d between about 0.1 a and about 0.5 a, where a is the lattice constant. Holes 122-i can be filled with air or with an optional dielectric 11 (
Photonic crystal 122 and the reflection of the photonic crystal from reflective p-contact 12 form a GaN resonant cavity. The resonant cavity offers superior control of the light. As the GaN cavity is thinned the optical mode volume is reduced. Fewer waveguided modes can be trapped in the cavity increasing the chances for the light to exit the device. This can be explained in the following discussion. The photonic crystal can affect the waveguided modes by scattering them out of the crystal. As the number of waveguided modes is reduced the more efficient the light extraction of the LED. For example if the epitaxial layers are thin enough to support only one waveguided mode (m), then initially 50% of the light would exit the GaN (Lout) and 50% would be waveguided in the epitaxial layers (Lin). For this argument we assume that we form a photonic crystal that is able to extract an additional 40% of this waveguided light (Seff). The extraction efficiency (Cext) can be written as:
C ext =L out +m*(L in �S eff)
Therefore the extraction efficiency of this structure is 50%+1*(50%*40%)=70%. Compare this to an epitaxial structure that supports 4 waveguided modes with a photonic crystal again with Seff=40%. If the light goes equally into all modes then each mode including the one exit mode has 20% of the light. This structure would only have an extraction efficiency of 20%+4*(20%*40%)=52%. In this argument the photonic crystal is not 100% efficient scattering out the light. In some embodiments the photonic crystal is etched deep enough and has the proper lattice dimensions so that a photonic band gap is created in the plane of the LED inhibiting waveguide modes, (Seff=100%). The thinner the epitaxial layers the easier it is to create a photonic band-gap. The thickness of the cavity (i.e. the thickness of epitaxial layers 20) is selected such that the epitaxial layers are as thin as possible to reduce the number of waveguided modes, but thick enough to efficiently spread current. In many embodiments, the thickness of epitaxial layers 20 is less than about 1 μm, and preferably less than about 0.5 μm.
In some embodiments, the thickness of epitaxial layers 20 is between about λ and about 5λ, between about 0.18 μm and about 0.94 μm for a device that emits 450 nm light. Holes 122 have a depth between about 0.05 λ and the entire thickness of n-type region 108. Generally, holes 122 are formed entirely within n-type region 08 and do not penetrate into the active region. N-type region 108 usually has a thickness of about 0.1 microns or more. The depth of holes 122 is selected to place the bottoms of holes 122 as close to the active region as possible without penetrating the active region. In alternative embodiments the photonic crystal penetrates the active layers and p-type layers.
The radiation pattern emitted from the device can be tuned by changing the lattice type, distance between the active region and the photonic crystal, lattice parameter a, diameter d, depth w, and epitaxial thickness (20). The lattice parameter a and diameter d are illustrated in
In some embodiments the periodic structure is a variation of the thickness of one or more selected semiconductor layers. The periodic structure can include variations of the thickness along one direction within the plane of the semiconductor layers, but extending along a second direction without variation, in essence forming a set of parallel grooves. Two-dimensional periodic variations of the thickness include various lattices of indentations.
The device illustrated in
conductivity (W/m K)
Electrical resistance (Ωcm)
Very high
0.01 plus contact resistance
0.01 plus contact resistance
5 � 10−6
Host substrate structure 49 and epitaxial structure 48 are pressed together at elevated temperature and pressure to form a durable metal bond between bonding layers 14A and 14B. In some embodiments, bonding is done on a wafer scale, before a wafer with an epitaxial structure is diced into individual devices. The temperature and pressure ranges for bonding are limited on the lower end by the strength of the resulting bond, and on the higher end by the stability of the host substrate structure and the epitaxial structure. For example, high temperatures and/or high pressures can cause decomposition of the epitaxial layers in structure 48, delamination of p-contact 12, failure of diffusion barriers, for example in p-contact 12, or outgassing of the component materials in the epitaxial layers. A suitable temperature range is, for example, about 200� C. to about 500� C. A suitable pressure range is, for example, about 100 psi to about 300 psi.
Exposure to the laser pulse results in large temperature gradients and mechanical shock waves traveling outward from the exposed region, resulting in thermal and mechanical stress within the epitaxial material sufficient to cause cracking of the epitaxial material and failure of wafer bond 14, which limits the yield of the substrate removal process. The damage caused by thermal and mechanical stresses may be reduced by patterning the epitaxial structure down to the sapphire substrate or down to a suitable depth of the epitaxial structure, to form trenches between individual devices on the wafer. The trenches are formed by conventional masking and dry etching techniques, before the wafer is bonded to the host substrate structure. The laser exposure region is then matched to the pattern of trenches on the wafer. The trench isolates the impact of the laser pulse to the semiconductor region being exposed.
Growth substrates other than sapphire may be removed with ordinary chemical etchants, and thus may not require the laser exposure substrate removal procedure described above. For example, a suitable growth substrate may include a thin layer of SiC grown or processed on to a thick layer of Si or SiOx. The Si base layer and/or oxide layer may be easily removed by conventional silicon processing techniques. The remaining SiC layer may be thin enough to be removed entirely by known etching techniques. N-contact 10 may then be formed on the exposed surface of the epitaxial layers. Alternatively, N-contact 10 may be formed in the holes in the SiC layer.
After the growth substrate is removed, the remaining epitaxial layers may optionally be thinned to form a cavity between the photonic crystal and p-contact 12 of optimal depth and of uniform thickness, usually with thickness variations less than about 20 nm. The epitaxial layers may be thinned by, for example, chemical mechanical polishing, conventional dry etching, or photoelectrochemical etching (PEC). PEC is illustrated in
As illustrated in
In some embodiments, an etch stop layer is incorporated into the epitaxial layers, as described above in
Though the embodiment illustrated in
After thinning, the photonic crystal structure is formed on the exposed surface of the epitaxial layers.
Having described the invention in detail, those skilled in the art will appreciate that, given the present disclosure, modifications may be made to the invention without departing from the spirit of the inventive concept described herein. Therefore, it is not intended that the scope of the invention be limited to the specific embodiments illustrated and described.
|Cited Patent
|Filing date
|Publication date
|Sep 3, 1992
|Dec 6, 1994
|Gold Star, Ltd.
|Method of making thin film transistors
|Mar 22, 1996
|Jul 14, 1998
|Hewlett-Packard Company
|Ordered interface texturing for a light emitting device
|Dec 2, 1996
|Sep 21, 1999
|Massachusetts Institute Of Technology
|Light emitting device utilizing a periodic dielectric structure
|Jan 23, 1998
|Jun 6, 2000
|The Regents Of The University Of California
|Separation of thin films from transparent substrates by selective optical processing
|Dec 3, 1997
|Dec 5, 2000
|Advanced Technology Materials, Inc.
|GaN-based devices using (Ga, AL, In)N base layers
|Nov 20, 1998
|Oct 23, 2001
|Lumileds Lighting, U.S., Llc
|Electrode structures for light emitting devices
|Oct 22, 1999
|Jan 1, 2002
|Gentex Corporation
|Semiconductor radiation emitter package
|Aug 30, 1999
|Mar 26, 2002
|Lucent Technologies Inc.
|Article comprising a plastic laser
|Apr 1, 1999
|May 6, 2003
|Siemens Aktiengesellschaft
|Method of separating two layers of material from one another and electronic components produced using this process
|Jan 13, 2003
|Aug 3, 2004
|Hewlett-Packard Development Company, L.P.
|Co-deposited films with nano-columnar structures and formation process
|Nov 26, 2003
|Dec 14, 2004
|Luminus Devices, Inc.
|Light emitting devices with improved extraction efficiency
|Oct 21, 2003
|Mar 14, 2006
|Lumileds Lighting U.S., Llc
|Photonic crystal light emitting device
|Jun 28, 2001
|Jan 10, 2002
|Nec Corporation
|Photonic crystal multilayer substrate and manufacturing method thereof
|Mar 13, 2001
|Sep 12, 2002
|Masahiro Kito
|Semiconductor laser element having excellent light confinement effect and method for producing the semiconductor laser element
|Aug 22, 2001
|Sep 19, 2002
|Lieber Charles M.
|Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
|May 29, 2002
|Dec 19, 2002
|Yu-Chen Shen
|Selective placement of quantum wells in flipchip light emitting diodes for improved light extraction
|Jul 23, 2001
|Jan 23, 2003
|Motorola, Inc.
|Structure and method for fabricating semiconductor structures and devices utilizing photonic crystals
|Jul 16, 2002
|May 15, 2003
|Lieber Charles M.
|Nanoscale wires and related devices
|Jan 28, 2002
|Jul 31, 2003
|Krames Michael R.
|LED efficiency using photonic crystal structure
|Jun 4, 2002
|Dec 4, 2003
|Kopin Corporation
|High-efficiency light-emitting diodes
|Jun 19, 2002
|Dec 25, 2003
|Hongyu Deng
|Vertical cavity surface emitting laser using photonic crystals
|May 29, 2003
|Jan 29, 2004
|Matsushita Electric Works, Ltd.
|Light emitting device
|Jun 18, 2003
|Jun 10, 2004
|Solomon Assefa
|Waveguide coupling into photonic crystal waveguides
|Nov 26, 2003
|Oct 21, 2004
|Erchak Alexei A.
|Light emitting devices
|Nov 26, 2003
|Oct 21, 2004
|Erchak Alexei A.
|Light emitting devices
|Dec 11, 2003
|Oct 28, 2004
|President And Fellows Of Harvard College
|Nanoscale coherent optical components
|Jan 7, 2004
|Jan 20, 2005
|Btg International Limited
|Precisely positioned nanowhiskers and nanowhisker arrays and method for preparing them
|Sep 27, 2004
|Feb 24, 2005
|Luminus Devices, Inc., A Delaware Corporation
|Light emitting devices
|Jun 18, 2004
|Feb 24, 2005
|Erchak Alexei A.
|Light emitting diode systems
|Jun 18, 2004
|Mar 10, 2005
|Erchak Alexei A.
|Electronic device contact structures
|Sep 27, 2004
|Mar 10, 2005
|Luminus Devices, Inc., A Delaware Corporation
|Light emitting devices
|Dec 12, 2003
|Apr 28, 2005
|Erchak Alexei A.
|Light emitting systems
|Nov 19, 2004
|Apr 28, 2005
|Luminus Devices, Inc., A Delaware Corporation
|Light emitting devices
|Jun 18, 2004
|Jun 16, 2005
|Erchak Alexei A.
|Optical display systems and methods
|Feb 7, 2005
|Jul 7, 2005
|Luminus Devices, Inc. A Delaware Corporation
|Light emitting devices
|Feb 7, 2005
|Jul 14, 2005
|Luminus Device Inc., A Delaware Corporation
|Light emitting devices
|Feb 7, 2005
|Aug 4, 2005
|Luminus Devices, Inc.
|Light emitting devices
|Feb 6, 2004
|Aug 11, 2005
|Ho-Shang Lee
|Light emitting system with high extraction efficency
|May 18, 2005
|Sep 29, 2005
|Luminus Devices, Inc., A Delaware Corporation
|Light emitting devices
|Mar 9, 2006
|Jul 13, 2006
|Wierer Jonathan J Jr
|Photonic crystal light emitting device
|Jun 17, 2005
|Dec 21, 2006
|Lumileds Lighting U.S, Llc
|Grown photonic crystals in semiconductor light emitting devices
|Mar 20, 1998
|Oct 28, 1998
|Mitsubishi Cable Industries, Ltd.
|GaN group crystal base member having low dislocation density, use thereof and manufacturing methods thereof
|Dec 4, 1998
|Jan 24, 2001
|Mitsubishi Cable Industries, Ltd.
|GaN-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF PRODUCING GaN-BASED CRYSTAL
|Jul 8, 2003
|Jan 28, 2004
|Nichia Corporation
|Nitride semiconductor device comprising bonded substrate and fabrication method of the same
|Title not available
|Jun 24, 2002
|Mar 20, 2003
|Lucea Ag
|Led-luminous panel and carrier plate
|Jul 8, 2003
|Jan 15, 2004
|Btg International Limited
|Nanostructures and methods for manufacturing the same
|Sep 30, 2003
|Apr 15, 2004
|Nanosys, Inc.
|Large-area nanoenabled macroelectronic substrates and uses therefor
|Oct 9, 2003
|Apr 22, 2004
|Nanosys, Inc.
|Nano-chem-fet based biosensors
|Jul 16, 2003
|May 6, 2004
|President And Fellows Of Harvard College
|Doped nanoscale wires and method of manufacture
|A. Kikuchi et al., "Self-Organized InGaN/GaN Multiple Quantum Well Nanocolumn Light Emitting Diodes Grown On (111) Si Substrate," Department of Electrical and Electronics Engineering, Sophia University, 1 page, unknown date.
|Boroditsky et al., "Light extraction from optically pumped light-emitting diode by thin-slab photonic crystals," Applied Physics Letters, vol. 75, No. 8, Aug. 23, 1999, pp. 1036-1038.
|Boroditsky et al., "Surface recombiantion measurements on III-V candidate materials for nanostructure light-emitting diodes," Journal of Applied Physics, vol. 87, No. 7, Apr. 1, 2000, pp. 3497-3504.
|Chen-Fu Chu et al., "Comparison of p-Side Down and p-Side Up GaN Light-Emitting Diodes Fabricated by Laser Lift-Off", Jpn. J. Appl. Phys., vol. 42 (2003), Part 2, No. 2B, Feb. 15, 2003, pp. L147-L150.
|European Search Report, 3 pages, May 30, 2005.
|Fan et al., "High Extraction Efficiency of Spontaneous Emission from Slabs of Photonic Crystals," Physical Review Letters, vol. 78, No. 17, Apr. 28, 1997, pp. 3294-3297.
|G. Kipshidze et al., "Controlled growth of GaN nanowires by pulsed metalorganic chemical vapor deposition," Applied Physics Letters 86, (2005) American Institute of Physics, pp. 033104-1 to 033104-3.
|G.B. Stringfellow and M. George Crawford, eds., "High Brightness Light Emitting Diodes," Academic Press, Inc., 1997, Chapter5, "AlGaInP Light-Emitting Diodes," by F.A. Kish and R.M. Fletcher, pp. 149-170.
|H. Benisty et al., "Impact of Planar Microcavity Effects on Light Extraction-Part 1: Basic Concepts and Analytical Trends", IEEE Journal of Quantum Electronics, vol. 34, No. 9, Sep. 1998, pp. 1612-1631.
|Hiroyuki Ichikawa et al., "Efficiency enhancement in a light-emitting diode with a two-dimensional surface grating photonic cyrstal," Applied Physics Letters, vol. 84, No. 4, Jan. 26, 2004, pp. 457-459.
|Hwa-Mok Kim, et al., "High-Brightness Light Emitting Diodes Using Dislocation-Free Indium Gallium Nitride/Gallium Nitride Multiquantum-Well Nanorod Arrays," Nano Letters 2004, vol. 4, No. 6, American Chemical Society, pp. 1059 to 1062.
|Hwa-Mok Kim, et al., "Nanoscale Ultraviolet-Light-Emitting Diodes Using Wide-Bandgap Gallium Nitride Nanorods," Adv. Mater.2003, 15, No. 7-8, Apr. 17, Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim, pp. 567-569.
|Hwang et al., "Spontaneous emission rate of an electric dipole in a general microcavity," Physical Review B, vol. 60, No. 7, Aug. 15, 1999, pp. 4688-4695.
|Imada et al., "Coherent two-dimensional lasing action in surface-emitting laser with triangular-lattice photonic cyrstal structure," Applied Physics Letters, vol. 75, No. 3, Jul. 19, 1999, pp. 316-318.
|J. Ristic et al., "Characterization of GaN quantum discs embedded in AlxGa1-xN nanocolumns grown by molecular beam epitaxy," Physical Review B68, (2003), The American Physical Society, pp. 125305-1 to 125305-5.
|J. Su et al., "Catalytic growth of group III-nitride nanowires and nanostructures by metalorganic chemical vapor deposition," Applied Physics Letters 86, (2005), American Institute of Physics, pp. 013105-1 to 013105-3.
|J.J. Wierer et al., "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures," Applied Physics Letters, vol. 84, No. 19, May 10, 2004, pp. 3885-3887.
|J.Noborisaka et al., "Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy," Applied Physics Letters 86, (2005), American Institute of Physics, pp. 213102-1 to 213103-3.
|Jonathan J. Wierer Jr., U.S. Appl. No. 10/691,026, filed Oct. 21, 2003, entitled: "Photonic Crystal Light Emitting Device", 30 pages.
|Kwa-Mok Kim et al., "Growth and characterization of single-crystal GaN nanorods by hydride vapor phase epitaxy," Applied Physics Letters, vol. 81, No. 12, Sep. 16, 2002, pp. 2193 ton 2195.
|Lee et al., "Modified spontaneous emission from a two-dimensional photonic bandgap crystal slab," J. Opt. Soc. Am. B, vol. 17, No. 8, Aug. 2000, pp. 1438-1442.
|M. Fujita et al., "Organic light-emitting diode with ITO/organic photonic crystal," Electronics Letters, Nov. 27, 2003, vol. 39, No. 24, 2 pages.
|M. Nagahara et al., "Selective Growth of Cubic GaN in Small Areas on Patterned GaAs (100) Substrates by Metalorganic Vapor Phase Epitaxy," Jpn. J. Appl. Phys., vol. 33 (1994), Part 1, No. 1B, Jan. 1994, pp. 694 to 697.
|Michael R. Krames et al., U.S. Appl. No. 10/059,588, filed Jan. 28, 2002, entitled: "LED Efficiency Using Photonic Crystal Structure". 62 pages.
|P. Bhattacharya et al., "Electrically Injected Photonic Bandgap Microcavity Light Sources," LEOS 2001 14th. Annual Meeting of the IEEE Lasers & Electro-Optics Society, San Diego, Ca, Nov. 11-15, vol. 1 of 2, pp. 76 to 77.
|P.A. Kohl, "Photoelectrochemical etching of semiconductors", IBM J. Res. Develop., vol. 42, No. 5, Sep. 5, 1998, pp. 629-637.
|Pottage et al., "Vertical-cavity surface-emitting resonances in photonic crystal films," J. Opt. Soc. Am. A, vol. 18, No. 2, Feb. 2001, pp. 442-447.
|S. Haffouz et al., "Effect of Magnesium and Silicon on the lateral overgrowth of GaN patterned substrates by Metal Organic Vapor Phase Epitaxy," MRS Internet J. Nitride Semicond. Res. 3, 8 (1998), 1998-1999 The Materials Reseach Society, pp. 1 to 6.
|S. Han et al, "Controlled growth of gallium nitride single-crystal nanowires using a chemical vapor deposition method," J. Mater. Res., vol. 18, No. 2, Feb. 2003, Materials Research Society, pp. 245 to 249.
|S. Kitamura et al, "Fabrication of GaN Hexagonal Pyramids on Dot-Patterned GaN/Sapphire Substrates via Selective Metalorganic Vapor Phase Epitaxy," Jpn. J. Appl. Phys., vol. 34 (1995), Part 2, No. 9B, Sep. 15, 1995, pp. L1184 to L1186.
|T. Fujii et al., "Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening", Applied Physics Letters, vol. 84, No. 6, Feb. 9, 2004, pp. 855-857.
|T. Hamano et al. "New Technique for Fabrication of Two-Dimensional Photonic Bandgap Crystals by Selective Epitaxy," Jpn. J. Appl. Phys. vol. 36 (1997), pp. L286 to L288.
|T. Kuykendall et al., "Metalorganic Chemical Vapor Deposition Route to GaN Nanowires with Triangular Cross Sections," Nano Letters, 2003, vol. 3, No. 8, American Chemical Society, pp. 1063 to 1066.
|T.N. Oder et al., "III-nitride blue and ultraviolet photonic crystal light emitting diodes," Applied Physics Letter, vol. 84, No. 4, Jan. 26, 2004, pp. 466-468.
|Tiwari, S., "Compound Semiconductor Device Physics," Academic Press, Inc., San Diego, CA, 1992, pp. 182-186.
|Tredicucci et al., "Single-mode surface-plasmon laser," Applied Physics Letters, vol. 76, No. 16, Apr. 17, 2000, pp. 2164-2166.
|U.S. Appl. No. 10/804,810, filed Mar. 19, 2004 entitled "Photonic Crystal Light Emitting Device," 28 pages.
|V.V. Mamutin, et al., "Growth of Self-Organized GaN Nanostructures on Al203 (0001) by RF MBE," Proc. Int. Workshop on Nitride Semiconductors, IPAP Conf. Series 1 pp. 413 to 416, unknown date.
|Vuckovic et al., "Surface Plasmon Enhanced Light Emitting Diode," Journal of Quantum Electronics, vol. 36, 2000, pp. 1-13.
|W. D. Zhou et al, "Electrically injected single-defect photonic bandgap surface-emitting laser at room temperature," Electronic Letters, Aug. 31, 2000, vol. 36, No. 18, pp. 1541 to 1542.
|W.S. Wong et al., "InxGa1-xN emitting diodes on Si substrates fabricated by Pd-In metal bonding and laser lift-off", Applied Physics Letters, vol. 77, No. 18, Oct. 30, 2000, pp. 2822-2824.
|Windisch et al., "Light-emitting diodes with 31% external quantum efficiency by outcoupling of lateral waveguide modes," Applied Physics Letters, vol. 74, No. 16, Apr. 19, 1999, pp. 2256-2258.
|Xu et al., "Finite-difference time-domain calculation of spontaneous emission lifetime in a microcavity," J. Opt. Soc. Am. B, vol. 16, No. 3, Mar. 1999, pp. 465-474.
|Y.-K. Song et al., "Resonant-cavity InGaN quantum-well blue light-emitting diodes", Applied Physics Letters, vol. 77, No. 12, Sep. 18, 2000, pp. 1744-1746.
|Citing Patent
|Filing date
|Publication date
|Nov 1, 2007
|Apr 13, 2010
|Canon Kabushiki Kaisha
|Structure having photonic crystal and surface-emitting laser using the same
|May 6, 2010
|Apr 10, 2012
|Koninklijke Philips Electronics N.V.
|Light emitting device grown on wavelength converting substrate
|Feb 11, 2010
|Jul 23, 2013
|Epistar Corporation
|Light-emitting device and manufacturing method thereof
|May 19, 2010
|Sep 17, 2013
|Koninklijke Philips N.V.
|Method of growing composite substrate using a relaxed strained layer
|May 19, 2010
|Apr 8, 2014
|Koninklijke Philips N.V.
|Light emitting device grown on a relaxed layer
|Jul 18, 2013
|Jun 17, 2014
|Epistar Corporation
|Light-emitting device and manufacturing method thereof
|Mar 3, 2011
|Jul 8, 2014
|Lg Innotek Co., Ltd.
|Light emitting device
|Feb 12, 2014
|Feb 3, 2015
|Koninklijke Philips N.V.
|Light emitting device grown on a relaxed layer
|Nov 1, 2007
|May 8, 2008
|Canon Kabushiki Kaisha
|Structure having photonic crystal and surface-emitting laser using the same
|Feb 11, 2010
|Aug 12, 2010
|Hsu Chen Ke
|Light-emitting device and manufacturing method thereof
|Sep 8, 2011
|Sung Min Hwang
|Light emitting device
|Apr 8, 2011
|Nov 10, 2011
|Koninklijke Philips Electronics N.V.
|Light emitting device grown on wavelength converting substrate
|Apr 27, 2011
|Nov 24, 2011
|Koninklijke Philips Electronics N.V.
|Composite growth substrate for growing a semiconductor device
|Apr 21, 2011
|Dec 1, 2011
|Koninklijke Philips Electronics N.V.
|Iii-nitride light-emitting device grown on a relaxed layer
|U.S. Classification
|International Classification
|Cooperative Classification
|European Classification
|Apr 23, 2012
|Fee payment
Year of fee payment: 4
|Apr 27, 2016
|Fee payment
Year of fee payment: 8


text:
Apple Considers Unlocking Cash, Sony Tumbles
Feb. 8 (Bloomberg) -- Zeb Eckert reports on today's top headlines. He speaks on Bloomberg Television's "First Up." (Source: Bloomberg)
Most Recent Videos
Soylent: The Food of the Future?
11:38 - Rob Rhinehart, Soylent's chief executive officer, discusses the company's quest to disrupt the food industry. He speaks with Bloomberg's Emily Chang on "Bloomberg West." (Source: Bloomberg)

subset: commoncrawl


text: Home > Actress > Nargis Nargis - Actress, Tamil Photo Gallery (30 Photos) Actress Nargis Photos including Nargis latest stills from movies and events. Nargis HQ stills. Feel free to download these images. Post your comment Related AlbumsSreya VyaasSweethaRuchika SharmaPriya ManiNargis FakhriKushbooTeja ShreeRaasi TamilWire.NET - Latest English News TamilCinema.News - Latest Cinema News TamilTunes.com - Latest Songs Downloads Tamil.Movie - Latest Tamil Movie Trailers to Watch Online Tamil.Gallery - Latest Tamil Galleries


text:
With only 27 days left in the school year, it is time to display the word cloud banner with names of all our 8th grade students. Each year I see groups of students gathered around determined to find their name. I hear our students in 6th and 7th grade talking about how much they will miss these 8th graders. Teachers give hugs to students who will be leaving us and help to reminisce about the good times here at WJMS. We are proud of your accomplishments and we celebrate your advancement to a new chapter in your lives. Congratulations WJMS class of 2016….you will be missed!
Posted in Displays | Tagged 2016, 8th grade, bulletin board, graduation | Leave a Comment »
During Teen Tech Week our Book Club students created Floppy Disk Journals.
Posted in Reading, Technology | Tagged Book Club, Floppy Disk Journal, Teen Tech Week | 2 Comments »
We celebrated Teen Tech Week March 7th through 11th with a new display this year. Ms. Pacman made her debut as sticky-note art. Kids thought it was great and were excited about trying out some others. Students could also play our version of Angry Birds. We had six bad piggies on a pyramid of boxes. Students could throw a ball at the pyramid to try to knock down all bad piggies. The media center also showcased a Technology Museum filled with old video controllers, typewriters, cameras, 8-track tape players and more. In addition, we went low-tech during the week. Students were able to make popsicle stick bows and used q-tips as arrows. They were able to make these fly up to 25 feet!
Posted in Displays, Technology | Tagged Angry Birds, Ms. Pacman, sticky note art, Technology Museum, Teen Tech Week | Leave a Comment »
Sixteen-year-old Tess Kendrick has spent her entire life on her grandfather's ranch. But when her estranged sister Ivy uproots her to D.C., Tess is thrown into a world that revolves around politics and power. She also starts at Hardwicke Academy, the D.C. school for the children of the rich and powerful, where she unwittingly becomes a fixer for the high school set, fixing teens' problems the way her sister fixes their parents' problems.
And when a conspiracy surfaces that involves the family member of one of Tess's classmates, love triangles and unbelievable family secrets come to light and life gets even more interesting—and complicated—for Tess.
Excellent Book
Posted in Book Reviews | Tagged Book Club, book review, Jennifer Lynn Barnes, The Fixer | Leave a Comment »
Posted in Displays, Reading | Tagged Valentine's Day | Leave a Comment »
Avatar meets The Terminator in this thrilling cyber-tech adventure
Crippled by muscular dystrophy, Adam spends his days playing virtual reality games, until a dangerously advanced artificial intelligence program that can control other machines tries to kill him.
Created by Adam's father, Sigma has escaped its cyber prison and is threatening world domination. In order to stop Sigma, Adam and five other terminally ill teens sacrifice their bodies and upload their minds into weaponized robots. Together, The Six must learn how to manipulate their new mechanical forms—and prepare for epic combat—before Sigma destroys humanity.
from https://books.google.com/books/about/The_Six.html?id=z7XprQEACAAJ&hl=en
Excellent Book
Posted in Book Reviews, Reading | Tagged book review, Mark Alpert, Reading, The Six | Leave a Comment »
We are enjoying our most recent addition to our Christmas decorations in the library…courtesy of Pinterest. I used $1 store beach balls covered with plastic table cloths. The tops are solo cups covered with aluminum foil. The rings at the top were made from paper clips. This one made a huge impact and we only spent $12!
Posted in Displays, Holidays | Tagged christmas decorations, holiday decorations, library holiday, ornaments | Leave a Comment »


text:
Skip to Main Content
IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards,
eBooks, and eLearning courses.
Learn more about:
IEEE membership
IEEE Xplore subscriptions
Consider a distributed sensor network (DSN) with randomly deployed sensors for binary detection of a phenomenon of interest (PoI). A data fusion center (which may be a sensor itself) monitors the PoI using both the directly acquired PoI data and the wireless communication signals conveying binary decisions about the PoI from other distributed sensors. To address this problem, we look into a PoI with specified statistics and present the modeling paradigm of Chernoff information azimuth spectrum (CIAS) to provide a compact, space-domain representation of asymptotic error exponents in DSNs. This school of thought applies an analogous approach to the description method of directional multipath channels. The above theoretical framework is then elaborated in light of geometrically-based modeling of sensor placement. Finally, we briefly explain the potential applications of the proposed methodology in terms of DSN performance evaluation, simulation and channel measurement.
A not-for-profit organization, IEEE is the world's largest technical professional organization dedicated to advancing technology for the benefit of humanity.© Copyright 2016 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.


text:
Toledo, OHUSA
December 6, 2013
Hello I am a novice programmer that would like to learn from others . looking forward to meeting people with common interests.
Meetup members, Log in
By clicking "Sign up" or "Sign up using Facebook", you confirm that you accept our Terms of Service & Privacy Policy


text:
A Historical Guide to Edgar Allan Poe / Edition 1by J. Gerald Kennedy
Pub. Date: 01/28/2001
Publisher: Oxford University Press, USA
Edgar Allan Poe (1809-1849), son of itinerant actors, holds a secure place in the firmament of history as America's first master of suspense. Displaying scant interest in native scenes or materials, Edgar Allan Poe seems the most un-American of American writers during the era of literary nationalism; yet he was at the same time a pragmatic magazinist, fully engaged in popular culture and intensely concerned with the "republic of letters" in the United States. This Historical Guide contains an introduction that considers the tensions between Poe's "otherwordly" settings and his historically marked representations of violence, as well as a capsule biography situating Poe in his historical context. The subsequent essays in this book cover such topics as Poe and the American Publishing Industry, Poe's Sensationalism, his relationships to gender constructions, and Poe and American Privacy. The volume also includes a bibliographic essay, a chronology of Poe's life, a bibliography, illustrations, and an index.
Product Details
- 9780195121506
- Publisher:
- Oxford University Press, USA
- Publication date:
- 01/28/2001
- Series:
- Historical Guides to American Authors Series
- Edition description:
- New Edition
- Pages:
- 256
- Product dimensions:
- 5.10(w) x 7.90(h) x 0.80(d)
Table of Contents
Introduction: Poe in Our Time, J. Gerald Kennedy
Edgar Allan Poe, 1809-1849: A Brief Biography, J. Gerald Kennedy
Poe and the American Publishing Industry, Terence Whalen
Spanking the Master: Mind-Crossings in Poe's Sensationalism, David Leverenz
Poe and Nineteenth-Century Gender Constructions, Leland S. Person
Poe and the Issue of American Privacy, Louis A. Renza
Bibliographical Essay, Scott Peeples
Customer Reviews
Average Review:
and post it to your social network
Most Helpful Customer Reviews
See all customer reviews >


text:
Taeyoon Son, Benquan Wang, Damber Thapa, Yiming Lu, Yanjun Chen, Dingcai Cao, and Xincheng Yao
Biomed. Opt. Express 7(8) 3151-3162 (2016)
Ting Qing, Shupeng Li, Min Xue, and Shilong Pan
Opt. Lett. 41(15) 3671-3674 (2016)
Jierong Cheng, Samad Jafar-Zanjani, and Hossein Mosallaei
Appl. Opt. 55(22) 6137-6144 (2016)
Subscription is a benefit of Optical Society (OSA) membership. Join Now.
Find 850,000+ images from OSA's core journals in Optics ImageBank
Since its first demonstration by Alfano and Shapiro, supercontinuum generation has been one of the most interesting...
The more complex a quantum system is, the harder it is to control it because with more degrees of freedom there are...
Designing a compact accelerator one would hardly think of a microscale silicon chip and a fiber laser normally used for...


text:
NorCal Snowboarders: South Bay Message Board › New Meetup: Whitewater Saturday... 80s style!
user 11406804
Sacramento, CA
Announcing a new Meetup for NorCal Snowboarders: South Bay!
What: Whitewater Saturday... 80s style!
When: Saturday, June 4, 2011 9:00 AM
Where: REI
2425 Iron Point Rd
Folsom, CA 95630
The weather is officially in the 80s! Join Norcal Rafters as we take on the entire South Fork of The American River starting at Chili Bar and ending at Salmon Falls Bridge. This is a 21 mile adventure, running such rapids as Meat Grinder, Trouble Maker and Hospital Bar! WhiteWater Photography will also be at Troublemaker, Satans Cesspool, and Hospital Bar in order to accurately catch your experience "frame by frame" so you can take your trip home with you.
Check it out!
Meetup members, Log in
By clicking "Sign up" or "Sign up using Facebook", you confirm that you accept our Terms of Service & Privacy Policy


text:
Read an Excerpt
The kid was going to fall right over the edge.
Adam Ryder's anger at his son was barely leashed and he was fighting to hold it back. They'd come here for sightseeing, like all the other tourists strolling around them, but Adam wasn't thinking much about history as he climbed into the ruins of an ancient Roman villa on a site overlooking the Mediterranean Sea. The island of Niroli seemed to be crammed with castles and old crumbling walls and all sorts of antique relics but that wasn't what he'd come for.
Actually, he'd come to this particular location because it wasn't too far from the hotel and looked to be a good place to let his six-year old son, Jeremy, loose to run off some of the excess energy that was making him such a pain to be around.
But his reason for being on Niroli, a destination he'd avoided all his life? Ah, that was harder to explain.
Still, even he had to admit the island had a magic quality. He'd felt it right away as they'd stepped off the flight from New York. The air seemed softer. The sunlight seemed to make things sparkle with possibilities. All of which immediately made him wary. He couldn't let things like that seduce him away from his goal.
After all, to put it plainly, he'd come to Niroli to do a little fund-raising. He needed money to save his companybig moneyand he was willing to do almost anything to get it, including accepting an unusual offer that had been made to himthe crown of this little island country. And there was nothing magical about that.
Meanwhile, he had to deal with Jeremy. He'd brought the boy along hoping to create a few bonding opportunities, but his interest in that project was waning fast. Thething was, the nanny he'd hired to come along and take care of his son had quit right there in the airport, loudly declaring she couldn't stand the boy just moments before boarding the plane.
Adam kept remembering the odd, slightly triumphant smile on Jeremy's face as she had stormed away. He'd faced off grown men in bar fights in his younger days with hardly a quiver of fear, but the look on his son's face, just before departing all known civilization with only him in tow, still sent shivers down his spine. He knew how to handle adults, both male and female. But what was he going to do with this kid?
"Take him out and let him run," the woman at the concierge desk at the hotel had suggested.
So here he was, letting Jeremy run. And the boy certainly ran. Up and down and all over the ruins, his blond hair flying in the breeze. At least he seemed interested in the ruins. That was something. He'd spent the entire plane ride asking, "Are we there yet?" until Adam had had to bite down on his own hand to keep from yelling at him.
Now Jeremy was balancing on the viaduct that had once brought water to the villa, a portion of which came perilously close to the edge of the cliff. Adam frowned. He supposed he should do the parental thing and warn him about falling. "Jeremy, don't go out on the edge like that," he called out. "It's dangerous."
The boy looked back at him and laughed. Adam shook his head. What six-year-old boy laughed like that, with that wicked tone, as though he relished torturing adults? The only thing he could think was that he'd better hire another, tougher nanny, and do it fast.
"Stay away from the edge."
Jeremy turned from the viaduct, but he began to climb the crumbling exterior wall of the old villa instead. Adam started toward him. This was getting ridiculous. The kid was going to kill himself.
"Jeremy! Damn it, get down from there right now!"
Jeremy turned to climb higherand fell right over the edge.
The shout that came from Adam seemed to rip through the walls of his chest. Shock and then sharp fear jolted through him and he began to run, cursing and praying at the same time. Oh, God! What if ?
He threw himself into the ruin and began to scramble up the steep wall, heading for the spot where Jeremy had gone over the edge. The Roman bricks crumbled under his feet, making for impossible climbing, but then he gained the harder ledge and vaulted up into position. Looking down, he braced himself for the sight of his son's shattered body lying on the rocks, thirty feet below.
Instead, he saw Jeremy kneeling at the feet of a slender woman, petting what looked like a golden retriever, and from his new vantage point he could see that there was a shelf, a sort of patio area, that jutted out over the sea, not far beneath him.
He took a deep breath and let his shoulders sag, but relief was followed quickly by raw anger. Now he realized that Jeremy hadn't fallen. He'd jumped. Adam let out an angry shout, then turned and made his way to the stone steps he noticed along the side. By the time he reached where the young woman was sitting on an old stone wall, Jeremy and the dog had gone on down to the rocky shore beneath and were now frolicking at the water's edge.
His anger at his son was only made worse by his sense of frustration, and he swore, then turned grudgingly toward the woman.
"Sorry," he muttered, just in case she was the type to take offense.
And then he stopped and looked again. She was quite striking. Her body was slim and graceful, her dark brown hair sleek and shining in the sunlight and braided with a silk scarf the color of spring leaves. Her neck seemed unusually long and slender, making him think of ballet dancers. He couldn't see her eyes as she wore a pair of very dark and stylish Gucci sunglasses, but the features he could see could have been classically cut in fine porcelain. In direct contrast, her mouth was full and lush and sensual, and her chin tilted impudently.
"I hope my son didn't bother you," he said, his gaze sliding over the creamy skin of her bare arms.
Her blouse was lacy, her skirt a wide swath of emerald-green gauze. Her feet looked delicate in leather sandals, the toenails painted a pearly pink. There was an elf-like air of the forest sprite about her, though she was too tall and well rounded to be a fairy. Altogether, she was very much the most enchanting creature he'd seen in a long time. He turned toward her the way plants responded to sunlightas though he had to have her in his life. "Oh, no," she responded pleasantly. "I enjoyed meeting him. He seems like a wonderful boy."
"Wonderful? Hah." That almost startled a laugh from him, but he liked her musical speaking voice with its faint accent adding a certain lilting charm. "I guess you didn't really have time to get to know him," he noted dryly.
A frown appeared between her neat eyebrows. "Is that supposed to be a joke?" she asked bluntly. "Why would you say such a thing about your own son?"
He hesitated. It probably did sound cold to someone who hadn't been thoroughly annoyed by Jeremy yet. He had a pang of remorse. Maybe she was right and he was getting too cynical about the boy.
"Frustration, I guess," he said, rubbing a hand through his sand-colored hair and giving her the up-from-under-his-eyebrows look that had been known to make grown women swoon like teenagers. "It's been a long, wearing day."
She didn't swoon. In fact, her mouth thinned a bit. "Oh?" she said in a tone that bespoke impending boredom. It was obvious she hadn't been charmed. "We just flew in from New York," he explained.
"I see."
She turned her face and looked out over the ocean. He was feeling dismissed. That surprised him. In his Hollywood milieu he was considered a very attractive, not to mention very powerful, man. The production company he'd founded and ran to this day was one of the most important in the business, despite the takeover nightmare it was going through right now.
And beside that, he didn't suffer dismissal lightly. If there was any dismissing to be done, he liked to be the one doing it. An impulse to confront her reaction rose in him right away.
But he fought it. For once he wasn't getting the admiring female response he was used to taking as his due. So what? He had more important things to take care of.
Looking down at the shoreline, he saw that Jeremy was still playing with the dog. He supposed he should go down and join them. But at that moment, the dog shook water from his wet fur all over Jeremy, and Adam grimaced.
Between rolling in the wet sand with a boy and a dog and hanging around on the ledge trying to get a beautiful woman to admit he was worth getting to know, the choice was an easy one. It was the challenge, he told himself. He glanced at the stone wall she was sitting on.
"Mind if I join you?" he asked, moving to do just that without waiting for her answer.
She hesitated just long enough to let him know this wasn't her preference, but she was polite.
"Please do," she said coolly, but she was gracious, shifting a little to be sure there was room for him and moving a huge canvas bag that looked big enough to contain all her earthly possessions.
He sat close enough to get a hint of her scent. It was fresh and spicy and not very sweet. For some reason, that gave him a frisson of excitement for just a moment, and immediately he was flooded with an urge to kiss those full lips.
He drew himself up, startled. He hadn't reacted so viscerally to a woman in yearsand he was used to being around a lot of beautiful women. Maybe it was the magic of the place, the soft, seductive breeze, the sound of the gentle waves on the beach below. He turned quickly, looking out at the ocean, thrown off a bit and not sure whether he wanted her to see how he was responding to her or not. If there was one thing he hated it was revealing any sort of vulnerability.
And that was a reaction he was noticing in himself more and more lately. He didn't trust anyone much, but experience had taught him that beautiful women were the most likely to betray you in a purely personal way.
What was the expression? Once bitten, twice shy? He'd been bitten all right. He'd practically had his arm chewed off a few times. And, yeah, he was shy. Damn shy. He was going to require big-time proof before he could be convinced trust was worth the cost.
Still, that didn't mean he didn't enjoy the game. He just didn't expect to win any prizes or take home the game pieces when he won.
"Nice view," he said gruffly, looking out over the huge expanse of sparkling Mediterranean water. "Do you come here often?"


text:
Mark Owen, Emma Ferguson, Willow Owen and Elwood Owen - Premiere of 'Epic' at Vue Cinema West End in Leicester Square - London, United Kingdom - Sunday 12th May 2013 (5 Pictures)
Photo credit: Cameron Clegg
Bonnie Langford
Photo credit: Cameron Clegg
Daly Thompson
Photo credit: Cameron Clegg
Aldo Zilli
Photo credit: Cameron Clegg
Claudia Winkleman
Photo credit: Cameron Clegg
View All: Premiere of 'Epic' at Vue Cinema West End
Next Mark Owen Slideshow: Mark Owen in Leicester square - London United Kingdom - Tuesday 5th March 2013
Perry performed 'Rise' and 'Roar' before Clinton accepted the nomination to be the Democrats' presidential candidate.
Bruce Springsteen will release rare tracks from 1966 in new album 'Chapter and Verse', which will accompany his autobiography 'Born To Run'.
There's still no reunion planned though.
Not broadcast in its entirety since 1967, a full restoration will be played in select cinemas to support Ron Howard's 'Eight Days a Week' touring...


text:
Autumn in Arkansas, all the year through, since I can not get enough! Some of my most recently discovered Arkansas treasures.
autumn fall foilage lisa putman visionary ozark national forest buffalo national river basin region
beautifully done, a great callender,dawnx
Thank you, Dawn!!!
10% off
for joining the Redbubble mailing list
Receive exclusive deals and awesome artist news and content right to your inbox.
Free for your convenience.


text:
An unforgettable experience
Designed to aid the transition from education into independent living for students with learning difficulties
For ages: 15-19+
The Young Enterprise Team Programme is an exciting enterprise journey that is suitable for students aged 15 to 19+ who have mild to moderate learning difficulties or are studying for Entry Level or Level 1 qualifications.
It is designed to aid the transition from education into independent living and employment by developing life skills through working as a team to set up and run a business or social enterprise. Full teacher and student resources are provided which have been designed to meet a range to abilities and needs.
How does it work?
Over a period of time ranging from one to two years, students work in teams to set up and run a real company or social enterprise under the guidance of their teacher, local business volunteer and Young Enterprise Manager. Each student takes on a job role and works as part of a team to be responsible for an area of the business such as Finance, Sales or Marketing. Students have the opportunity to manage money, open a bank account, interact with business volunteers and customer at sales events and present to an audience. The programme develops life skills which are fundamental for young people making the transition from education:
- Communication
- Confidence
- Teamwork
- Resilience
- Money Management
Key features:
- A detailed handbook for teachers with guidance in setting up and running the business, and materials which can be used as a teaching resource
- Optional student workbooks for participants to record and celebrate the skills they have developed
- A flexible process for managing finances by recording sales/purchases and calculating how much profit the business has made
- The opportunity to sell products and work with other schools taking part at local Young Enterprise Trade Fairs
- The opportunity to take part in a range of competitions including Best Logo, Best Trade Stand and Best Video Presentation
- Support from a local Business Volunteer who is DBS checked and has received full training from Young Enterprise
- Support from a dedicated Young Enterprise Manager who will provide guidance and advice throughout the project
- Access to a range of online resources, including support for teachers in mapping Team Programme to relevant qualifications such as the ASDAN Enterprise Short Course or BTEC Workskills
- The opportunity to reflect on the learning and development of skills which are valued by employers.
Supporting the Curriculum
Click on the links below for details of how this programme supports the curriculum.
- Mapping Across to the Secondary Curriculum (England)
- Delivering Economic Wellbeing and Financial Capability at KS4 (England)
View further information on how this programme supports good career guidance, employability and enterprise education.
Want to know more?


text:
Sal Windsurf Holiday General Impressions
Sal in one of the Cape Verde islands just of the coast of North West Africa (south of the Canary Islands). During the winter months from November to April this is one of the few close very reliable windy winter destinations that you can go.
There are few good hotels in Sal (amougst a lot of bad) but for those looking for the best hotel Sal, and our recommend property, we suggest the Morabeza Hotel in Sal as a great choice. For those clients traveling with non windsurfing partners or family as we understand how important the right hotel and location is.
When it comes to the windsurfing in Sal there are 3 main spot; in the main bay of Santa Maria beach (where most of the accommodation is also based), Penta Leme which is great for blasting (min level waterstart) and of course Ponte Preta for down th eline wave riding. Sal is not ideal for learning, although of course we offer a full range of courses, for a beginner windsurf holiday we woudl suggest the island of Boa Vista as much better.
The Cape Verde islands are very well know by wave sailers. There are some small easy waves at the far end of the main Santa Maria beach for those that want to gibe it a go in a safe spot or if you are very confident then Ponte Preta (about a 25 minute drive to the West Coast) is an phenomenal 'full-on' wave spot. At the outside section in Ponte Leme there is some nice swell to place on.
Best Wind Surfing Season
Very good good normal bad
What our clients say
"great trip, well organised - many thanks for all of your advice and help"
"Just to let you know we had a great time in Sal. The guys at the Ion centre were brilliant - Couldn't have been more helpful. Fiona got the shock of her life when a pod of whales surfaced just a few yards from her ! Thanks for your help in arranging the holiday . "
Planet Suggested Tour Itineraries In Cape Verde
Island HoppingShow Details
The Spots In Sal
The main are for windsurfing is Santa Maria at the southern end of Sal. The bay at Santa Maria has a 4 Km stretch of beautiful white sandy beaches. This is the best area for beginners and intermediates.
For more experienced windsurfers, and enthusiastic wave novices, Ponte Leme is perfect. Here you will find clean, unbreaking waves up to 2 meters.
The most famous wave spot on Sal is at Ponta Preta; a must visit spot if only even to watch the extraordinary 3 to 6 meter wave peeling just 50 meters from the shore line. This is only for advanced windsurfers as there is cross off shore wind (perfect wave sailing direction) with no safety cover.
The Wind In Sal
Thanks to their position within the winter trade-wind belt, the Cape Verde islands supply steady force 4 to force 5 windsurfing conditions from November until May.
On the main Santa Maria beach the cross-offshore, or side-shore wind from the left enables effortless upwind sailing to the various sections of the beach.
Things To Do In Sal
The main activity, aside from windsurfing or kitesurfing, is scuba diving. The dive centres have an excellent set-up and offers a full range of courses and daily diving.
Other activities Sal offers are Buggy Tours, SUP, Boat trips to Boa Vista, Surfing, Quadbiking, and full island tours are also available.
The Nightlife In Sal
Santa Maria has a few clubs with regular live music, restaurants and bars with a friendly buzzing atmosphere.
Speak to an Expert Now01273 921 001
Get Exclusive
Travel Tips & Deals
Be the first to know about online exclusive, new deals, special events and giving updates!Sign Up


text:
Used Car News | Home
Edmunds Sees Lease Pull-Ahead Growth
- Hits: 3047
There's evidence to suggest that pull-ahead offers will be more prevalent in 2013 than in recent years.
Edmunds.com projects that there will be about 500,000 more lease returns this year than in 2012, and dealers may use these programs to better manage the influx of customers - and used car inventory - coming back to the market.
Many car lessees may be eligible to upgrade to a newer car and reduce their monthly payments through "lease pull-ahead" offers, reports Edmunds.com,. And while these offers aren't always the best possible deal, Edmunds.com advises anyone scheduled to come off a lease this year to at least explore the option.


text:
Robbers abduct Phoenix man, try to get cash, steal cars
PHOENIX — An early-morning crime has left a central Phoenix neighborhood feeling uneasy Thursday after four suspects forced a man to drive from ATM to ATM to get them cash.
Police said the suspects, some of whom were armed, followed a 25-year-old man to his home near Glendale and 11th avenues around 3 a.m. Once there, they took the man at gunpoint and drove to several banks trying to take out cash from ATMs.
Phoenix Police Sergeant Tommy Thompson said the group eventually returned to the home, where the men tied up the victim and his brother, 22, before ransacking the home. The brothers suffered minor injuries.
Some of the suspects drove off in the brothers' cars, one a silver Mercedes with the Arizona license plate 695 PWZ, the other a gold Lexus Arizona license plate BAG7184.
Police don't know how much, if any, money the suspects managed to get.
Sponsored Articles
- Deciding when you need knee surgery
- Celebrating Fourth of July is much cooler in these AZ towns
- Top ten road trip bathrooms in America
- Six things causing a pain in your neck
- 5 things to make your summer move easier
- Three elements of a strong timeshare exit guarantee
- Stretches and exercises for carpal tunnel syndrome
- The best Major League ballparks have their own personality
- Comparing the best regular seasons: The '96 Bulls and '16 Warriors
- 3 Arizona road trips and the vehicles to get you there
- Colon cancer is preventable. Check these signs and symptoms to stay healthy.
- 6 of the biggest skin cancer myths
- Affordable small home makeover ideas
- Locals helping locals: 6 success stories you need to know about
- Sunscreen facts that could save your life
- 6 energy saving hacks for your home
- 5 tips for choosing a company to end your timeshare
- Overlooked water tips to save you money
- 5 of the most adored gentlemen in professional sports today
- The real danger of sitting at your desk
- Most surprising NBA playoff performances of the last 40 years
- 11 classic baseball movies you must see again
- Finally getting rid of fat: 3 methods that actually work
- 4 reasons cancer survivors should focus on food
- 5 spring cleaning spots everyone forgets
- 5 reasons to look forward to watching the D-backs this season
- Common virus attributed to spike in head and neck cancers
- 5 signs it's time to end your timeshare ownership
- 3 most overlooked ways to keep your home healthy
- 6 ways the air in your home could be making you sick


text:
Cheese Topped Vegetable Soup
|Chopped onion
|1 Cup (16 tbs)
|Sliced celery
|1⁄2 Cup (8 tbs)
|2 Tablespoon
|Beef bouillon
|4 Cup (64 tbs)
|Cubed cooked chicken
|2 Cup (32 tbs)
|1⁄2 Pound, sliced pennywise
|Hard sausage
|1⁄4 Pound, diced (Dry Type)
|Gruyere cheese
|6 Ounce, shredded (1 Package, Valio Brand)
1. In a large pan, add the butter and heat well
2. Add the onions and the celery to the pan and sauté on medium heat till the vegetables are tender.
3. Add the bouillon cubes, chicken, sausage and frankfurters to the pan and cook again for 15 minutes
4. Garnish with VALIO Gruyere cheese and serve hot.
Recipe Summary
Rate It
Nutrition Rank
Nutrition Facts
Serving size
Calories 404 Calories from Fat 261
% Daily Value*
Total Fat 29 g45.2%
Saturated Fat 13.5 g67.7%
Trans Fat 0 g
Cholesterol 120.6 mg40.2%
Sodium 1099.2 mg45.8%
Total Carbohydrates 3 g1%
Dietary Fiber 0.65 g2.6%
Sugars 1.4 g
Protein 31 g61.3%
Vitamin A 11.7% Vitamin C 7.5%
Calcium 41.7% Iron 14%
*Based on a 2000 Calorie diet


text:
May is Older Americans Month
May is Older Americans Month, and Mayors Donna Lanceslin of Baldwin and Raymond Harris Jr. of Franklin, and St.
- Read more about May is Older Americans Month
- Log in to post comments
--The Daily Review/Diane Miller Fears
Morgan City Junior High guidance counselor Jill Tamporello goes through her files in preparation for this week's school orientation. (The Daily Review/Shea Drake)
May is Older Americans Month, and Mayors Donna Lanceslin of Baldwin and Raymond Harris Jr. of Franklin, and St.
WASHINGTON (AP) — Two companies crucial to the business of U.S. energy exploration — Halliburton and Baker Hughes — have abandoned their planned $34 billion merger.
NEW ORLEANS (AP) — More rain is in the forecast for a soggy south Louisiana. The ground is saturated from several days of heavy rain fall.
The St. Mary Parish Sheriff's Office has reported street flooding in Bayou Vista.
New changes in early childhood education present challenges for local private day care centers, which will be required to meet the same standards as programs fully funded by the state.
The Morgan City Housing Authority received positive marks on its annual audit and had no negative findings, which housing authority officials attribute to the efforts they've made to improve the au
The following are the radio dispatch logs from the Morgan City Police Department. To report unlawful or suspicious activity, call the police department at 985-380-4605.
A Bayou Vista teen turned himself in Thursday for the theft of a dirt bike and four-wheeler after a St.
Franklin Police Chief Sabria McGuire reported the following arrest:
Sheriff Mark Hebert recently accepted a $1,500 donation given to the St. Mary Parish Sheriff's Office by SM Energy of Morgan City.
America's love for fairytales has been reignited over the years thanks in part to television interpretations and the acclaimed film adaptation of the Stephen Sondheim musical Into the Woods.
Jimmie Johnson's 20th annual Free Basketball Clinic was held Saturday at Morgan City High School.
The annual summertime barbecue competition is underway July 22-23 under the bridge in Morgan City.
Kara Rhodes and George R. Beattie were united in holy matrimony during a 1 p.m. double-ring ceremony June 11 at St. Bernadette Catholic Church in Bayou Vista. The Rev.
Franklin Banner-Tribune
P.O. Box 566, Franklin, LA 70538
Phone: 337-828-3706
Fax: 337-828-2874
Morgan City Daily Review
P.O. Box 948, Morgan City, LA 70381
Phone: 985-384-8370
Fax: 985-384-4255


text:
Pro Basketball Talk "J.R. Smith will probably re-sign with the Cavaliers. But… That request doesn't seem so outlandish to me, but then again, I didn't expect Smith to have such a hard time in free agency last summer. Simply, the capped-out Cavaliers have no mechanism to adequately replace Smith if he leaves...." July 18
Sportsrageous "J.R. Smith is "nervous" about his chances of rejoining LeBron James next season. In a recent interview, the shooting guard admitted that he has thought about the possibility of leaving the Cleveland Cavaliers, which will fuel the NBA rumors that he's signing a big contract with another..." July 17
The Score "The fact that LeBron James has yet to re-sign with the Cleveland Cavaliers is not related to J.R. Smith's outstanding contract status, according to Cleveland.com's Chris Haynes. With NBA news slowing down in mid-July, the only superstar yet to put pen to paper is James - though it's quite..." July 16
Fear The Sword "Despite there being almost no news on the J.R. Smith front, it seems as if he'll be back in wine & gold next season. And Cavs GM David Griffin is confident in that fact. "I think the good news is J.R. wants to be here and we want J.R. back," Griffin said on ESPN during the Cavs' summer league..." July 15
The Score "As J.R. Smith continues to spend his summer shirtless in celebration of winning his first NBA championship, it's believed he returns to Cleveland when the party eventually stops. The Cavaliers are expected to re-sign the unrestricted free agent, according to Chris Hayes of Cleveland.com, as the..." July 09
Deadspin "J.R. Smith's shirtlessness has inspired takes from everyone in the NBA-adjacent universe, from cranky old former baseball players to every publication on the internet, and today the president of the United States of America weighed in. He ended his congratulatory call with Tyronn Lue with a..." June 24
Cavs Nation "The Cleveland Cavaliers are the 2016 NBA Champions and not long after winning the title, the Cavs went to celebrate. Before going back home to Cleveland, the team stopped by Las Vegas to celebrate their championship at XS nightclub in Las Vegas. One player you KNOW will have fun and enjoy..." June 20
USA Today "Cleveland Cavaliers veteran guard J.R. Smith won the first championship of his 12-year NBA career on Sunday night, and — as was apparent from the moment the final buzzer sounded — it's a monumental accomplishment that he certainly isn't taking for granted. Smith immediately broke down into..." June 20
Cleveland Plain Dealer "Cleveland Cavaliers sharpshooter J.R. Smith will allow his player option deadline of June 16 to pass in order to become a unrestricted free agent this summer, league sources informed cleveland.com. Sources with knowledge of the situation spoke on the condition of anonymity due to sensitive..." June 15
Complex "Stephen Curry deserved to be the NBA's Most Valuable Player this year. Just look at the voting numbers: he was the first unanimous MVP in NBA history. One would argue there was not much room for interpretation; I mean, literally every single reporter voted for him. J.R. Smith, however, has his own..." June 11
The Score "J.R. Smith is taking fans behind the scenes. The Cleveland Cavaliers shooting guard is hoping to start a reality TV show featuring himself, his bodyguard "Boom," and Smith's family members. He has opened up a Kickstarter account to raise funds for the project. There's still nearly two more..." June 07
Complex "J.R. Smith sat down in the back of a car while Vice Sports asked him questions for a "Ride Along" segment recently. One of the many topics that the Cavaliers guard touched on was his very first tattoo (you may have noticed that he has more than one at this point). And he revealed that there's a..." May 10
TMZ "LeBron James might have familiar company on the set of "Space Jam 2" ... 'cause TMZ Sports has learned producers have already reached out to Cavs star J.R. Smith for a role in the flick. We spoke to Smith's rep Daniel Hazan ... who says producers contacted him a few weeks ago to see if Smith..." May 08
Cleveland Plain Dealer "Sneakerheads take notice: J.R. Smith is no slouch when it comes to his shoe game. The Cleveland Cavaliers guard took to Instagram over the weekend to show of his massive sneaker collection, which includes more than 300 pairs of the finest kicks money can buy. "From a kid who window shopped..." April 11
ESPN "Cavaliers guard J.R. Smith has been sued for $2.5 million by a man he got into an encounter with outside a New York City nightclub last November, according to documents obtained by ESPN.com. Justin Brown, who was 19 at the time, approached Smith at a pizza shop at about 4 a.m. after Smith had..." March 27
New York Daily News "J.R. Smith can be counted among those hoping to see past and current teammates Carmelo Anthony and LeBron James hook up to play with close friends Chris Paul and Dwyane Wade at some point later in their careers, as James suggested as a possibility earlier this week. James wasn't made available..." March 25
Cleveland Plain Dealer "Cleveland Cavaliers guard J.R. Smith is not only making plays on the court, he's doing so off of it as well. Smith is in the process of parting ways with Creative Artists Agency and plans to sign with Rich Paul of Cleveland-based Klutch Sports, league sources informed cleveland.com. A..." March 24
Larry Brown Sports "Lil Wayne and fellow rapper 2 Chainz were guests on "Highly Questionable" on ESPN2 Friday and were asked to share some good stories about partying with athletes. At first, the two misinterpreted the question and began dishing on how JaMarcus Russell and Dajuan Wagner partied their ways out of..." March 12
ESPN "Cleveland Cavaliers guard J.R. Smith said he knows he can't change the NBA's decision not to include him in the Foot Locker Three-Point Contest, but he hopes the league reconsiders how it chooses participants for future All-Star festivities. "Other than stats and analytics and everything they..." February 05