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British man prosecuted after confronting priest who abused him as a boy — A British man who says he was abused by a Catholic missionary almost 50 years ago is being prosecuted in the Italian courts after he travelled to Verona to forgive his abuser. Mark Murray (60) was one of 11 men who settled out of court with the Comboni missionary order for abuse suffered during the 1960s and 1970s at Mirfield in Yorkshire. They received sums of between £7,000 and £30,000, paid by the order.
Do western feminists view the rest of the world differently? — Dear western feminists, As a woman raised in Afghanistan, I cringe when I type the word "western". I know that the experience of being a woman in this world is fundamentally the same. When I write "western", I don't write it because I believe that you are physically different to me. After all, what better evidence is there for our basic common humanity as women than breast cancer? The disease has no respect for our ethnic or cultural particularities. It attacks all of us equally, with the indiscriminate force of universality.
Female Sing Sing guard admits to raping male inmate — A former corrections officer at Sing Sing Correctional Facility admitted Tuesday to raping an inmate while on the job in May 2015, according to authorities. Evita Hinds, 35, of Queens, pleaded guilty to one count of third degree rape, a class E felony. She faces up to four years in state prison when she is sentenced in October, Acting Westchester County District Attorney James A. McCarty said in a news release. Continue reading


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Magainin Pharmaceuticals Inc. is a biopharmaceutical company committed to developing medicines for serious diseases from genomics and natural products. Research and development efforts in anti-angiogenesis, obesity, infectious diseases and respiratory diseases.
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Dipexium, Tandem Diabetes make Feltl Best Ideas list
Dipexium Pharmaceuticals (NASDAQ:DPRX) and Tandem Diabetes (NASDAQ:TNDM) have made Feltl & Co.'s Best Ideas list for the second half this year. Analyst Ben Haynor writes that top-line data for D...
Jazz Pharmaceuticals Acquires Celator for $1.5B
Jazz Pharmaceuticals plc (Nasdaq: JAZZ) and Celator Pharmaceuticals, Inc. (Nasdaq: CPXX) today announced that they have entered into a definitive agreement for Jazz Pharmaceuticals to acquire Celator ...
Jazz Pharmaceuticals to Acquire Celator
NewsJazz Pharmaceuticals and Celator Pharmaceuticals announce agreement for Jazz Pharmaceuticals to acquire Celator for $30.25 per share.
Jazz Pharmaceuticals And Celator Pharmaceuticals Announce Agreement For Jazz Pharmaceuticals To ...
1Included secondary AML and de novo AML with a karyotype characteristic of myelodysplastic syndrome (MDS) 2 U.S. FDA Breakthrough Therapy designat...
Novartis splits pharmaceuticals division into two business units
Novartis has announced internal structural changes that it says will "focus" its pharmaceuticals division by creating two business units, Novartis Pharmaceuticals and Novartis Oncology, reporting ...
M&As this week: Savara Pharma, Xiangxue Pharmaceuticals
Savara Pharmaceuticals plans to expand its pipeline of orphan respiratory drugs by acquiring Serendex Pharmaceuticals, a provider of inhalation therapies for rare respiratory conditions.
Ampio Pharma spins off Vyrix Pharmaceuticals
Ampio Pharmaceuticals Inc. (drugs for inflammatory conditions) spun off its sexual dysfunction business into Vyrix Pharmaceuticals Inc.
Valeant Pharmaceuticals-Aktie: Investoren werden immer wieder kalt erwischt! - Aktienanalyse
New York - Valeant Pharmaceuticals-Aktienanalyse von Analyst David Risinger von Morgan Stanley: In Bezug auf die Aktien des US-Spezialpharmaunternehmens Valeant Pharmaceuticals International Inc. (...
Biotransformation of pharmaceuticals by ammonia oxidizing bacteria in wastewater treatment processes.
Pharmaceutical residues could potentially pose detrimental effects on aquatic ecosystems and human health, with wastewater treatment being one of the major pathways for pharmaceuticals to enter into t...
Pore Structure and Synergy in Antimicrobial Peptides of the Magainin Family.
Magainin 2 and PGLa are among the best-studied cationic antimicrobial peptides. They bind preferentially to negatively charged membranes and apparently cause their disruption by the formation of trans...
Removal of pharmaceuticals from secondary effluents by an electro-peroxone process.
This study compared the removal of pharmaceuticals from secondary effluents of wastewater treatment plants (WWTPs) by conventional ozonation and the electro-peroxone (E-peroxone) process, which involv...
Ranking Prescribed Pharmaceuticals in Terms of Environmental Risk: Inclusion of Hospital Data and the Importance of Regular Review.
A newly available dataset on pharmaceuticals used in Scottish hospitals enabled an Environmental Risk Assessment that includes hospital consumption of pharmaceuticals, as previous UK rankings have bee...
Announcing the 2016 Pharmaceuticals Travel Award for Young Investigators.
For the first time in its short history, our journal is able, this year, to support a young researcher in the field of medicinal chemistry by offering a travel grant of 800 CHF.[...].
MSI-78 Topical Cream vs. Oral Ofloxacin in the Treatment of Infected Diabetic Ulcers
224 adults with diabetic foot ulcers will be randomized to either magainin peptide (MSI-78) or ofloxacin (FLOXIN, Ortho-McNeil Pharmaceutical Corporation) an oral fluoroquinolone antibioti...
Study of Equivalence of Generic Pimecrolimus Cream 1% and Elidel® 1% in Subjects With Mild to Moderate Atopic Dermatitis
The purpose of this study is to compare the safety and efficacy profiles of Watson Laboratories, Inc.'s Pimecrolimus Cream, 1% to those of Valeant Pharmaceuticals North America LLC's Elide...
This is a Phase II randomized single blind (investigator-blinded) safety and efficacy study in approximately 90 adult females 18-50 years of age (to achieve 80 evaluable participants) at t...
Clinical Study of Non-inferiority With Participants Diagnosed With Primary Knee OA (GLACIAL)
This phase III clinical study will be conducted in Brazilian research sites. It will be included in the study 314 participants diagnosed with primary knee OA according to the classificatio...
This study is a Phase 1 clinical trial to determine the safety, tolerability, and efficacy of Siltuximab (Sylvant) as an adjunct to antipsychotic medications in stable outpatients with sch...
Magainin Pharmaceuticals Inc. is a biopharmaceutical company committed to developing medicines for serious diseases from genomics and natural products. Research and development efforts in anti-angiog...
Genaera Corporation is a biopharmaceutical company committed to developing medicines for serious diseases from genomics and natural products. Our research and development efforts are focused on anti-a...
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WASHINGTON — The U.S. Department of Education has concluded that two Virginia schools denied students with emotional disabilities the right to an appropriate public education by frequently using seclusion and physical restraint.
In a July 29 letter of findings, the department wrote that it had entered into an agreement with the two public schools in Prince William County to correct the problems. The letter was sent to lawyers who filed a 2012 complaint on behalf of a mother and her minor son, a former student at one of the schools, and other students.
According to the letter, school employees physically restrained students for several minutes at a time. The schools also secluded students in padded areas and prevented them from leaving, the letter said.
More From Virginia
- Giant Confederate Flag Raised in Virginia
- 5 Things You Didn't Know About Sen. Tim Kaine
- Northern Virginia Man Caught Trying to Join ISIS
- Triple Shooting in Virginia Captured on Facebook Live
(© Copyright 2014 The Associated Press. All Rights Reserved. This material may not be published, broadcast, rewritten or redistributed.)


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I have many large (~30 MB a piece) tab-delimited text files with variable-width lines. I want to extract the 2nd field from the nth (here, n=4) and next-to-last line (the last line is empty). I can get them separately using awk:
awk 'NR==4{print $2}' filename.dat
and (I don't comprehend this entirely but)
awk '{y=x "\n" $2};END{print y}' filename.dat
but is there a way to get them together in one call? My broader intention is to wrap it in a Python script to harvest these values from a large number of files (many thousands) in separate directories and I want to reduce the number of system calls. Thanks a bunch -
Edit: I know I can read over the whole file with Python to extract those values, but thought awk might be more appropriate for the task (having to do with one of the two values located near the end of the large file).


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Welcome to Tesco Wine by the case.
We hope you enjoy your visit.
Use the options on the left to narrow your search further, or to widen your search, you can remove the selected options from the list above.
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"A beautiful wine; The scent is complex and seductive - forest fruit, mocha and cigar box; To drink i..." more about Château d'Issan 2005, Margaux
£420.00 per case
Equivalent to £70.00 per bottle
420 Clubcard Points
"From the Listrac appellation in the Medoc, a good hunting ground for lesser known, yet great value B..." more about Chateau Fourcas Dupre 2010, Bordeaux (OWC)
£84.00 per case
Equivalent to £14.00 per bottle
84 Clubcard Points
"Abundant notes of spicy oak, elegant black currants and rich fruitness along with hints of forest fl..." more about Chateau La Tour Martillac 2010, Bordeaux
£150.00 per case
Equivalent to £25.00 per bottle
150 Clubcard Points
"This Saint Estephe Bordeaux provides lovely ripe red berry fruit flavours with an underlying note of..." more about Chateau Lilian Ladouys 2010, Bordeaux (OWC)
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Stanley Brothers Lyrics
Browse by album:
Lyrics for album: Other Songs
›A beautiful life
›A few more seasons
›A few more years
›Life of sorrow
›Lonesome night
›Man of constant sorrow
›Vision of mother
›All i ever loved was you
›All the love i had is gone
›Angel band
›The Angels Are Singing
›Another night
›Are you afraid to die
›Baby girl
›Beautiful star of bethlehem
›Bootleg john
›Bound to ride
›Brand new tennessee waltz
›Bright morning stars
›Camping in canaan's land
›Cheap love affair
›Children go where i send thee
›Cotton eyed joe
›Could you love me one more time
›Cry from the cross
›Daniel prayed
›Darkest hour is just before dawn, the
›Death is only a dream
›Drunkard's hell
›East virginia blues
›Fields have turned brown, the
›Gathering flowers for the master's bouquet
›Green pastures
›Handsome molly
›Harbor of love
›Hemlocks and primroses
›Hills of roane county
›Home far away
›How mountain girls can love
›I am the man, thomas
›I am weary let me rest
›I don't want your ramblin letters
›I hear a choo choo
›I just got wise
›I just think i'll go away
›I love no one but your
›I only exist
›I'll love noone but you
›I'll meet you in church sunday morning
›I'll never grow tired of you
›I'll remember you love in my prayers
›I'm better off now that you're gone
›I'm lonesome without you
›I'm lost and i'll never find the way
›If i lose
›If that's the way you feel
›In despair
›It's never too late
›It's raining here this morning
›Jacob's ladder
›Katy daley
›Keep a memory
›Kneel at the cross
›Let me be your friend
›Let me walk lord by your side
›Let us be lover's again
›Let's go to the fair
›Let's part the best of friends
›Little benny
›Little glass of wine
›Little maggie
›Lonely tombs
›Lonesome river, the
›Lonesome without you - stanleys
›Long journey home
›Man in the middle, the
›Maple on the hill
›Medicine springs
›Meet me by the moonlight
›Memories of mother - stanleys
›Midnight storm
›Midnight train
›Mother no longer awaits me at home
›Mother's footsteps guide me on
›Mother's only sleeping
›My main trial is yet to come
›No burdens pass through
›No letter in the mail
›Nobody's business
›Nobody's darling on earth
›Nobody's love is like mine
›Oh death
›Old country church
›Old rattler
›Only way to say goodbye, the
›Our last goodbye
›Over in the glory land
›Pass me not
›Paul and silas
›Pig in a pen
›Poison lies
›Pretty little miss
›Pretty polly
›Rambling letters
›Rank strangers
›Riding on that midnight train
›Say won't you be mine
›Scarlet purple robe
›Sea of regret
›Shouting on the hills of glory
›Sit down with the lord and pray
›Sixteen years
›Stone walls and stell bars
›Sweeter than the flowers
›Sweetest love
›Sweethearts in heaven
›Take your shoes off moses
›That happy night
›The pale horse and his rider
›Think of what you've done
›This lonesome old feeling
›This weary heart you stole away
›Thy burdens are greater than mine
›Too late to cry
›Too sweet to last
›Tragic love
›Tragic romance
›Two more years
›We shall meet someday
›What about you
›When jesus beckons me home
›When my savior reached down
›When you go walking after midnight
›Where we never shall die
›White dove
›Who will call you sweetheart
›Who will sing for me
›Why me ralph
›Wicked path of sin
›Wild bill jones
›Will he wait a little longer
›Will the circle be unbroken
›Will you miss me
›Wings of angels
›Worried man blues
›You go to your church
›Your worries and troubles are mine
›Zion's hill
›Don't Cheat In Our Home Town
›Mountain Dew
›Over In The Gloryland
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Billy Crawford A Whole New World
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Well, it most certainly will help! I have been in a bad funk since last weeks huge drop and the 3.8 million share dump last Thursday from those warrants.
ms.Weezie--here is little remedy for your stock illness... hopefully you are familar with options..if so ..and if you have some spare funds there ...write a few call options above ..or puts below...at this point puts below would be better with up coming report..however...I would wait until that event before doing anything... Now get a nice glass of Ice Tea...will do you good!


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Welcome to the new Greyhounds Website!
• Reports of Greyhounds in action • Greyhounds' Schedule • Masters' Records • Canadian Masters' Rankings • Photos & Videos • Greyhounds' Top Performances • Coaches' Tips • Meet Results • and much more..
Greyhounds: photo day, June 25, 2016!
Weekly Workouts now available to non-members
In prior years, we posted our weekly Runners' Workouts on our Website. Last October, we changed to emailing the workouts directly to members. Since then, we have received requests from runners worldwide who had been following the workouts that were posted online. ..…Read More
Canadian Masters Athletics Announces the 2015 Athletes of the Year
Based on nominations received from members of the CMA and votes cast by the CMA Board, the 2015 Athletes of the Year have been named in four categories of athletics, each of which has been named after a masters athlete who was prominent in the appropriate discipline, and is either still active or was active in the past, as identified below.
The following are the recipients of the 2015 Canadian Masters Athletes of the Year Awards:
Individual Track Events – "Earl Fee Award"
W85 Lenore Montgomery BC
This award is named after Earl Fee, the great masters middle distance track athlete who, at age 87, is still active and still holds many Canadian and World records, and continues to inspire others.
Lenore Montgomery from North Vancouver is the winner of the Earl Fee Award. In 2015, Lenore set W85 Canadian records in the 400m, 800m, 1500m and 5000m track races. Of these, the 800m, at 4:33.86, and the 5000m, at 32:36.20, were also World records, and were age-graded at 96% and 98%.
Combined Events – "Ian Hume Award"
M60 Reidar Zapf-Gilje BC
This award is named after Ian Hume who, beginning with the first World Masters Championships in Toronto in 1975 and for a period of 25 years, won 29 World Championship medals and set 40 World records in 9 events, including the Pentathlon and the Decathlon.
Reidar Zapf-Gilje from Vancouver is the winner of the Ian Hume Award. In the Norwegian Multi-Event Championships in June 2015, Reidar won the Gold Medal in the M60 Pentathlon, setting a new Canadian record of 3,575 points, 372 points above the previous record. Also during the year, he won Gold Medals in the M60 age group in the BC 55+ Games in the Pentathlon, with 3,369 points, and in the Throws Pentathlon, with 3,295 points.
Coquitlam Masters Athlete of the Year 2015
Elaine Whidden - Track & Field
Elaine Whidden was inducted into the Coquitlam "Wall" of Fame as the Masters Athlete of 2015 in Track & Fied on June 16, 2016.
Quoting from their website: "Her 100m time of 14.60 seconds bested a record set by a Canadian Masters Athletics Hall of Fame member, and she repeated the feat in the 200. As the anchor, Elaine would also put the finishing touch on another record, this time the Canadian women's 60-plus 4x400m relay. The quartet of Greyhounds runners knocked 27 seconds off the old standard at a meet in Surrey."
Christa Bortignon - 2016 Sponsor
Many thanks to Christa Bortignon for contributing to our Polevaulting wish list. Christa contributed by paying for a 9 foot pole for the women's polevaulting program. The pole cost $475 Canadian and finally arrived after seven weeks.
Sam Walker New Head Coach of Greyhounds Masters
At our recent AGM on April 2, Harold Morioka announced that he was stepping down as Head Coach after 17 years. The baton now passes to Sam Walker.
Minutes of the AGM will be distributed shortly.
Coach Sam has this message for all of the Greyhounds.
As your new head coach, I wanted to recap what I had mentioned at this years AGM for those that were unable to attend:
First and foremost, a sincere and heartfelt "THANK YOU" to Harold for the many years dedicated to the Greyhounds club.
Thank you for your time and commitment, passion, care and concern, knowledge and humour.
It is an honour to have had Harold as a mentor of which, I have learned immensely. …...Read more
Coach Harold stepping down but not saying Sayonara
After 17 years as the Greyhounds head coach, I have decided to resign. The club has grown tremendously since it's inception, from about 15 members in 1999 to 79 members in 2015. Initially we were a "Seniors" - over age 55 club. But younger athletes asked to join our club so within a few years we became a Masters - over age 35 club. We have 73 members so far in 2016.
Resigning as your head coach was not an easy decision. Actually I have been considering it for a few years. As you know my health has not been the best lately. Last spring when I failed my yearly test, my cardiologist was worried and told me to take it easy, no physical activity until he gave me the okay.
Coach Sam's Tip of the Week July 25
Get Off To A Clean Start
This is basically how a sprint race should go:
Start Line Referee: "TRACK IS CLOSED. WARMUP SUITS OFF. STAND BEHIND YOUR BLOCKS" Pretty straight forward to do as your told here
Starter: "ON YOUR MARKS " ..……(Read More)
Coach Harold: Dylan Armstong Classic Meet May 13-14
Fifteen Greyhounds registered to compete in the inaugural Dylan Armstrong Meet in Kamloops. This meet was originally called the Kamloops Centennial Meet and was a 3-day meet from Friday to Sunday. This year the meet was reduced to only Friday and Saturday and several events were excluded. At the end of the meet on Saturday, the organizers held 9 "You Think You're Fast" races for each sex from age 9 to 20+. ..….More
Coach Sharon's Jumps Tip July 23
Just looking to the weekend, and I shall have to offer jumps practice at an unusual time because I am volunteering for the BC summer games in Abbotsford all day on Saturday.
I am available for an evening practice on Saturday July 23rd, from approx. 7 pm to 8:30 pm as needed.
Jumpers who wish to stick to a Saturday morning practice, ..... …..Read More
Greyhounds New Throws Coach
Luca Molinari is a throws coach with experience and knowledge beyond his years. Luca has had success coaching at the high school level and youth Track & Field Clubs. He is a Hammer Throw specialist and is currently on the SFU Track and Field team.
Luca's next sessions will be at North Surrey Senior Secondary Oval Saturday, July 30th from 9:30 to 11:30 am. …....Throws Photos
Greyhounds Intro to Pole Vaulting with Reidar
Reidar will be doing an intro to pole vaulting on Thursdays at 10:00 am. …..Read More
Greyhounds Polevaulting Photos
Latest Results:
Jul 9-10, 2016 - Trevor Craven, Burnaby, BC
Jul 1-3, 2016 - BC Masters, Kelowna, BC
Jun 17-19, 2016 - Langley Pacific Invitational
May 13-14, 2016 - Dylan Armstong Classic, Kamloops, BC
Apr. 24, 2016 - Hayward Classic, Eugene, OR
Apr. 23, 2016 - South Fraser HS Track Meet, Bear Creek Park, Surrey
Mar. 19, 2016 - Ocean Athletics Spring Breaker
Community Events:
BC Summer Games - Abbotsford July 21-24
The purpose of the BC Games is "To provide an opportunity for the development of athletes, coaches, and officials in preparation for higher levels of competition in a multi-sport event which promotes interest and participation in sport and sporting activities, individual achievement and community development."
Volunteers are urgently required to help with the games. To volunteer go to the link: https://www.bcgames.net/abb2016s/VolunteerModule/register.aspx
Volunteer training sessions:
7th Annual Shaheed Bhagat Singh Memorial 5KM Run-June 12
The weather was great for the annual 5K Run and 3K Walk with all proceeds going to BC Children Hospital. Lenore Montgomery completed the 5k in 33'14" and Renate Cheetham in 36'. Race organizers especially honored Lenore with an escort for the entire race. ….See More Photos
Port Coquitlam - Strong Body Fast Track
Form Function and Fitness are offering a Strength Training Class specifically geared to the runner. Classes start April 27. Drop in fee for Greyhound Members is reduced to $15 from $20 and a further 20% discount if a 10 pass package is purchased for $120. … Read More


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Sen. Elizabeth Warren: Organize unions to end boom and bust economy
"Something powerful is happening. All the work, the organizing, all you have done for many years is now culminating like never before."
Hispanic Caucus cheers calls to dump Trump
"This is the most critical election in American history; we have five million families who long to come out from the shadows."
Video: John Legend and AFL-CIO team up to reform prison system
#FREEAMERICA is a multi-year culture campaign initiated by Legend to change the national conversation about our country's misguided policies.
Unions: Dem platform stronger on unfair trade deals
The proposed Democratic Party platform includes language that is close to an outright rejection of the controversial TPP.
Teamster was one of two African-Americans shot dead
Philando Castile was a Teamsters Local 320 member and nutrition services supervisor at the J.J. Hill Montessori school in St. Paul.
AFL-CIO endorses Hillary Clinton for President
"Hillary Clinton has proven herself as a champion of the labor movement and we will be the driving force to elect her President of the United States."
Carrying on Muhammad Ali's fight for justice
Ali's outspokenness and activism made him a beacon for African Americans everywhere.
Report: Fatal crash wouldn't have happened with proper backup
Unions and workers have been campaigning for years to keep 2-person crews on all freight and passenger trains, citing safety reasons.
Chicago May Day marchers show unity against Trump
Thousands of people marched for a more just society and to confront the face of bigotry and classism: the Republican front runner for president, Donald Trump.
At U.S. Capitol: 1,275 arrested fighting for democracy
Our nonviolent, civil disobedience was one action among many during a week-long mobilization aimed at starting a new, broad-based movement to restore democracy in the U.S.


text:
switch Statement (JavaScript)
Enables the execution of one or more statements when a specified expression's value matches a label.
switch (expression) { case label : statementlist case label : statementlist ... default : statementlist }
Use the default clause to provide a statement to be executed if none of the label values matches expression. It can appear anywhere within the switch code block.
Zero or more label blocks may be specified. If no label matches the value of expression, and a default case is not supplied, no statements are executed.
Execution flows through a switch statement as follows:
Evaluate expression and look at label in order until a match is found.
If a label value equals expression, execute its accompanying statementlist.
Continue execution until a break statement is encountered, or the switch statement ends. This means that multiple label blocks are executed if a break statement is not used.
If no label equals expression, go to the default case. If there is no default case, go to last step.
Continue execution at the statement following the end of the switch code block.
The following example tests an object for its type.
function MyObjectType(obj) { switch (obj.constructor) { case Date: return "Object is a Date."; break; case Number: return "Object is a Number."; break; case String: return "Object is a String."; break; default: return "Object is unknown."; } }
Supported in the following document modes: Quirks, Internet Explorer 6 standards, Internet Explorer 7 standards, Internet Explorer 8 standards, Internet Explorer 9 standards. See Version Information.


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Pap Smear (cont.)
After the Procedure
The health care professional will send a letter with test results. If there is a problem, the woman's health care professional may contact her. For peace of mind, she can also call the medical office to get the results. Before leaving after the exam, she can ask how long it takes the office to receive the lab report.
A negative or normal test finding means that the cervix looks healthy. All the cells are of a healthy size and shape.
A positive or abnormal test finding means that something unusual is in the sample. The test found cells of a different size and shape.
An abnormal Pap smear result does not always indicate cancer. Cells sometimes appear abnormal but are not cancerous. The woman will have to return to the doctor for follow-up care.
Most laboratories in the United States use a standard set of terms called the Bethesda System to report, or interpret, test results. Under the Bethesda System, Pap smear samples that have no cell abnormalities are reported as "negative for intraepithelial lesion or malignancy" (meaning the woman does not have cancer).
Samples with cell abnormalities fall into the following categories (as outlined by the National Cancer Institute):
Medically Reviewed by a Doctor on 3/23/2015
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About Me
Conditions and Treatments
- Kanas Family Foundation Associate Professor of Surgical Oncology, Department of Surgery
- DirClin Brst Srg & Comm Outrch
Board Certifications
- American Board of Surgery - Surgery, 1989
Education and Training
- Residency, Beth Israel Medical Center, Surgery, 1988
- Fellowship, Memorial Sloan-Kettering Cancer Center, Surgery, 1986
- Residency, Beth Israel Medical Center, Surgery (General), 1985
- MD from Tel Aviv University, 1982
Locations and Appointments
- Aetna HMO
- Aetna Indemnity
- Aetna Medicare
- Aetna POS
- Aetna PPO/EPO
- Cigna EPO/POS
- Cigna PPO
- Empire Blue Cross Blue Shield EPO
- Empire Blue Cross Blue Shield HMO
- Empire Blue Cross Blue Shield Indemnity
- Empire Blue Cross Blue Shield MediBlue
- Empire Blue Cross Blue Shield POS
- Empire Blue Cross Blue Shield PPO
- Empire Blue Cross Blue Shield Pathways, Enhanced
- HIP Access I
- HIP Access II
- HIP Child Health
- HIP Medicare
- HealthSmart (WTC)
- Hotel Trades
- Humana Medicare
- MagnaCare PPO
- Medicare
- MultiPlan/PHCS PPO
- NYS Empire Plan
- Oscar
- Oxford Freedom
- Oxford Liberty
- Oxford Medicare
- Tricare
- UnitedHealthcare Core and Charter
- UnitedHealthcare EPO
- UnitedHealthcare HMO
- UnitedHealthcare Medicare
- UnitedHealthcare POS
- UnitedHealthcare PPO
- UnitedHealthcare Top Tier
Welcome back!
As a returning patient for this doctor, please schedule an appointment using your MyChart at NYU Langone account.
Learn more about MyChart at NYU Langone.
A Web- and Mobile-Based Intervention for Women Treated for Breast Cancer to Manage Chronic Pain and Symptoms Related to Lymphedema: Randomized Clinical Trial Rationale and Protocol
Fu, Mei Rosemary; Axelrod, Deborah; Guth, Amber; Scagliola, Joan; Rampertaap, Kavita; El-Shammaa, Nardin; Fletcher, Jason; Zhang, Yan; Qiu, Jeanna M; Schnabel, Freya; Hiotis, Karen; Wang, Yao; D'Eramo Melkus, Gail
JMIR research protocols. 2016 Jan 21. 5 (1): e7-e7 e7
Oncologic outcomes after nipple-sparing mastectomy: A single-institution experience [Meeting Abstract]
Guth, A A; Frey, J D; Alperovich, M; Kim, J C; Axelrod, D M; Shapiro, R L; Choi, M; Karp, N S; Schnabel, F R
Cancer research. 2016 15 Feb 2016. 76 (4):
DCIS is a noninvasive cancer, not a risk factor for breast cancer [Meeting Abstract]
Guth, A; Montes, J; Schnabel, F; Chun, J; Schwartz, S; Kamen, E; Shapiro, R; Axelrod, D
Annals of surgical oncology. 2016 February 2016. 23 (1): S69-S69


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Yes these rooms are very reasonable during the week but unfortunately I felt that the inn proprietors were doing everything on the cheap from breakfast to the wine, from cleaning to basic maintenance. The towels are worse than Motel 6, our room was not clean in the corners and our bed linens were not changed. The wine they tell you its French however, I saw empty Charles Shaw wine bottles in the kitchen. Two Buck Chuck is fine.....just tell us it's Trader Joe's and don't be dishonest by trying to pass it off as French. (They save French wine bottles and pour the Trader Joe's into them) Our room did not have a smoke detector as it was found on top of the dresser. Half the electrical outlets did not work, I had to try my hair in the corner. The room are so noisy you can hear your neighbor in the next room and every step of the person upstairs. The breakfast is literally the cheapest bread you can find, not even stuff from Costco, worse than that. Watered down O.J., one bowl of butter, one bowl of jelly, waffles, oatmeal to make yourself and slices of banana that they monitored. They obviously don't believe in adding a bit of color to your plate. They advertise fresh baked goodies but for 5 days we saw nothing of the sort. We have stayed in several other affordable, dog friendly inns in Carmel that have been reasonably priced and we have been very pleased. This one was a huge disappointment.
- Official Description (provided by the hotel):
- English styled country Inn with rooms and suites, ocean views, garden and patio; quiet area three blocks from the village. ... more less
- Reservation Options:
- TripAdvisor is proud to partner with Expedia, Booking.com, Orbitz, Hotels.com, Travelocity, Odigeo, Priceline and Hotwire so you can book your Carmel Wayfarer Inn reservations with confidence. We help millions of travelers each month to find the perfect hotel for both vacation and business trips, always with the best discounts and special offers.
- Also Known As:
- Carmel Wayfarer Hotel Carmel


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CSaP Annual Conference 2015
How can government make better use of expertise and evidence from the humanities?
Venue: Murray Edwards College and Churchill College, Cambridge
Date: 14 April 2015 (10 am – 7:15 pm + drinks)
This year our conference will explore opportunities for improving the way government accesses, assesses and makes use of expertise from the humanities, and offer examples of the significant contribution these disciplines have made to public policy.
Conference theme
The study of the humanities can provide context, meaning and narrative to many of the cultural considerations that frame policy making. For example, the humanities offer insight into the motivations for human actions, political communication, and the politics of well-being, which contribute to a society based on a culture of democratic argument. This conference will both address the opportunities and also consider practical steps that can be taken to help increase the day-to-day interaction between research in the humanities and the work of government.
Panel discussion topics include:
- The multiple dimensions of climate change
- Understanding the financial future with lessons from the past
- Art and memory: conflict and conflict resolution
- The role of evidence and analysis in effective policy making
There will also be a poster session and competition during lunch, where early-career researchers will have an opportunity to present their work.
Who should attend?
This conference has been designed for an audience of policy makers, academics, business leaders and early-career researchers who have an interest in the relationship between the humanities and policy.
Cost of attending
The cost of attending is £50 with a reduced rate for researchers and students:
- Standard cost - £50
- Academics - £25
- Students and postdocs - £10
How to register
To register for this event and to pay online, please click here (you will be taken to the University of Cambridge online store).
For further information, please email email@example.com.
Sponsors and partners
The 2015 annual conference has been organised in partnership with the British Academy, History & Policy, and Churchill College Cambridge.


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Lost in Space TV Show Watchlist
Provider: Eastern (ET) Change
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- Premise: The space family Robinson is sent on a five-year mission to find a new planet to colonize, but the voyage is sabotaged time and again by an inept stowaway, Dr. Zachary Smith. The family's spaceship, Jupiter II, also carries a friendly robot who endures an… (more)
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Lost in Space: The Complete Series [Blu-ray]
By 20th Century FoxBuy New: $83.18
Irwin Allen Television Productions, 1964-1970: A Critical History of Voyage to the Bottom of the Sea, Lost in Space, The Time Tunnel and Land of the...
By McFarlandBuy New: $35.00
Lost in Space - Season 2, Vol. 2
By CBS TelevisionBuy New: $26.38
Popular Shows
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Popular Movies
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We heard of Cactus Bleu through some friends who'd never actually stayed there themselves but heard the prices were OK. We looked up the internet site and everything looked great : nice rooms, warm friendly atmosphere, central location. Price was about 30 euros/night. We called the place and the owner, Martine, sounded welcoming and friendly, so we decided to give it a try when we got to Essaouira.
The first impression when getting to the location, before entering the place, was not good: it was located behind the old town, in a small, rundown back alley that smelled like urine and was surrounded by really ugly constructions, visibly a merchant zone. The owner was expecting us at the corner at we'd called before going in. She'd mentioned on the phone she had a few parking spaces in front of the hotel. Actually, there was just the back alley itself, where she parked her own car, so we awkwardly parked our car behind it making efforts not to block the entrances to the next door buildings, and trying not to hit a concrete plot that we ended up hitting when driving backwards out of the alley. So, first unpleasant surprise....
Inside the place, the entrance was a bit gloomy with wall paints needing refreshing. The place is actually Martine's own home - which she kept mentioning as a selling argument. We actually wished it were more like a real B&B instead of someone's home... Anyway, like many places in Essaouira's old town, the rooms were arranged around a central patio, on 3 or 4 levels with stairs. Many rooms don't have windows, though the one she assigned to us, located on the top floor, did. It seems the place was empty, all rooms were vacant and there were only 2 girls and a man sitting on a couch downstairs - likely the owner's friends or family. In the room, the furniture was OK though basic, but the worst thing was an EXTEMELY strong smell coming out of the private bathroom. We first thought is was sewage, then we figured it could some kind of product inside the toilet bowl. Regardless, it was absolutely unbearable, especially at night, it actually kept us from sleeping normally.
The next day, we told the owner's assistant about the smell problem, a young Moroccan girl who helps with cleaning and cooking - the owner wasn't around at that particular moment. She got very defensive and denied the existence of any kind of smell in the room. It made us wonder if she'd been inside that top floor room lately... We were eager to leave to look for another place, so she asked as to pay for the night we spent. When we requested a receipt for our payment, she looked surprised, and said she had to call the owner for that. When the owner arrived, we told her about the horrible smell in the room, and that's when they both got really nasty, they started insulting us, saying no-one had ever had any such problem, that there was no such smell, and pretty much kicked us out, after painstakingly writing some sort of receipt for our payment.
We couldn't believe it, the smell in the room was so strong we thought there was probably some unusual problem that could be solved, we would have never imagined that the owner and her help would just deny it... Another thing we noticed is some stains on the bed sheets, red stains on one of them, and weird spots on another one. Before we left, the housekeeper started throwing my things on the floor to force me to pick them up, and they basically kicked us out of the place.
We've never ever been treated this way anywhere in the world, this was really a bizarre experience. After looking around, we ended up at another place, simple but clean and friendly. Cactus Bleu, avoid at all cost...
- Official Description (provided by the hotel):
- The Cactus Bleu was entirely renovated in 2007 and decorated with themes inspired by travels. The owner lives during all the year in the riad and will personally assist the guests at this B&B. There are 8 rooms and 6 shower rooms arranged on two floors. On each floor, you can find 2 rooms with connecting door suitable for family (5 nights lodging ). ... more less
- Reservation Options:
- TripAdvisor is proud to partner with Booking.com and Priceline so you can book your Riad Cactus Bleu reservations with confidence. We help millions of travelers each month to find the perfect hotel for both vacation and business trips, always with the best discounts and special offers.


text:
Reading mode: Light Dark
Canon PowerShot S100
Announced Sep 15, 2011 •
12 megapixels | 3″ screen | 24 – 120 mm (5×)
Ask a question in forums about the Canon PowerShot S100.
Ask a new question
By: GS9 (4 weeks ago)
By: TexasBearPhotog (3 months ago)
Hi all! First, I'd like to thank all of the users that have submitted and answered questions regarding the Canon G9 X. I was in the market for a point and shoot replacement for my Canon S100 and all the talk here on the forum helped me to make an informed decision when I ordered the camera last week. It just came today, and wow what a nice looking camera. I haven't played around with it much, but in my brief time with it so far, I've noticed something that I'm worried about. When I move the...
By: Andrew Mitchell (6 months ago)
I am reading a lot of reviews about the G7X, and they all mention how the camera slows down dramatically when shooting RAW. I would interested to know how the G7X compares to the S100 when shooting RAW. I have the S100, and have absolutely no problems at all with RAW shooting speeds. I put it on single shot, aperture mode, and it just happily shoots away, with very little lag between shots. I took 20+ RAW shots in a row last night, and was unable to get the camera to slow down, or fill its...
By: stowed4sea (Jan 26, 2015)
I'm a bit overwhelmed with options. I'm looking for a camera where I can shoot good pictures of my product(board games) but I also need to be able to shoot quality videos for a review of each product. I want to perform both these options with one camera and I need it to look professional, but I cannot afford top of the line quality. Good quality should be good enough for me but these are pricey and don't want to miss. Ideally, I would love a camera with a flip up screen so I can make sure...
By: crcostel (Dec 14, 2014)
Looking at getting a refurb canon for my wife and I. It has to be relatively easy for her to use and compact enough to be pocketable/pursable. Mainly this will be for indoor/outdoor photos which will be blown up no more than 8x10 (usually more 4x6) Here are options S100 (refurb) - $100 S110 (refurb/new) $150/180 SX280 (Refurb) - $108 Thanks!
By: AAL7 (Oct 21, 2014)
I've borrowed a S100 to see if I like it. It's in RAW mode and the images it's taking, even at low ISO, seem very noisy. Is this a common experience? Also I can only set a maxiumum of 1920 pixels in RAW mode. Why so low, when 4000x3000 is available in JPEG mode? Thanks
By: NathanNL (Jul 11, 2014)
I'm going to buy two Sandisk 32GB cards for a Nikon Coolpix S9700 and a Canon PowerShot S100. Which Sandisk SD card should I buy for these cameras? (Ultra, Extreme, Extreme Plus) Thank you! P.S. I want to buy the best (fastest) SD cards for these cameras so their performance is not limited by the speed of the SD card. In other words fast enough for these cameras.
By: nsbohn (Mar 19, 2014)
Posted to: Open Talk
Initially, I wanted to ask "What point and shoot has the lowest focal length equivalent?" thinking that would get me the camera I want. I currently shoot with a Canon Rebel t3i, mainly because I'm comfortable with it, its versatile, and its not very expensive. Not interested in debating over the t3i's capabilities. I do not want to spend more than a few hundred dollars on either a new lens, or another camera (leaning more towards this, as having a backup would be nice). I do real estate...
By: NathanNL (Jan 29, 2014)
Just now I read two articles on here about a Pentax K-500 and the Canon 100D. After that I read that the Pentax' AF is less than Canon/Nikon's. So and then I found some articles about the D(3100/)3200/3300 and the D5100. I have no clue how to differentiate them. At the moment I use a Canon S100 and I want better image quality. Overall and in low-light scenes. The ability to use a lens for objects further away is nice as well since the S100 has only 5x zoom. I had a Alpha 100 in the past. I...
By: Ardcorr (Jan 25, 2014)
Being trying to find an answer to this in the manual but thought this might be less of a headache. After I have reviewed pictures on my canon s100 I hit the playback button but instead of going back to the "live display" it now shuts the camera off. I fairly sure it didn't do this before and my guess is it's customisable and I have inadvertently set it to turn it off. I guess I could just revert all setting to their default to fix it but I'd much prefer not. Having been through the menue...
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Fleece Friday: Take 15% off 1+ yards of Fleece Fabric Through 11:59 PM EDT July 29th.
Most of my fabrics are sized for smaller projects like doll clothing. If you need a different sized print, let me know and I'd be happy to upload a bigger or smaller version of any of my designs. :)
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text:
Marol Residency
- Free breakfast and free WiFi
Main amenities
- 10 guestrooms
- 24-hour room service
- 24-hour front desk
- Air conditioning
- Daily housekeeping
- Laundry service
- Luggage storage
- Tour/ticket assistance
- TV in a common area
What's around
- In Andheri East
- Powai Lake (2.6 mi / 4.2 km)
- MIDC Industrial Estate (0.8 mi / 1.4 km)
- Santacruz Electronic Export Processing Zone (1.1 mi / 1.7 km)
- National Institute of Industrial Engineering (2.4 mi / 3.9 km)
- Shoppers Stop (2.9 mi / 4.7 km)
For families
- Private bathroom
- Free toiletries
- Daily housekeeping
- Laundry facilities
- Cable TV service
Not so good hotel if traveling from outside India
smaller than expected and no free breakfast. the wifi was so slow. booked for a couple n…
Marol Residency
Hotel Info: 800 1205131from S$30
- Deluxe Room
- Super Deluxe Room
Recommended hotels
At a glance
Key facts
Hotel size
- This hotel has 10 rooms
- This hotel is arranged over 1 floor
- Check-in time starts at noon
- Check-out time is noon
Required at check in
- Credit card or cash deposit required
- Government-issued photo ID required
- Minimum check-in age is 18
Travelling with others
- No pets or service animals allowed
- Free WiFi in public areas
- Free WiFi in rooms
- Free nearby parking
Nearby Two Star Mumbai hotels
In the hotel
- Free breakfast
- 24-hour room service
- 24-hour front desk
- Tours/ticket assistance
- Dry cleaning/laundry service
- Laundry facilities
- Luggage storage
- Number of buildings/towers - 1
- Television in common areas
In the room
- Air conditioning
- Private bathroom
- Shower only
- Bidet
- Free toiletries
- 32-inch LCD TV
- Cable TV channels
- Free newspaper
- Free WiFi
- Phone
- Daily housekeeping
Top Mumbai hotels
Recently reviewed hotels in Mumbai
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"Comfortable hotel but can be cleaner - for the price I paid there are better choices in the same area."Mar 12, 2016
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Marol Residency's small print
Also known as
- Marol Residency
- Marol Residency Hotel
- Marol Residency Hotel Mumbai
- Marol Residency Mumbai
Only registered guests are allowed in the guestrooms.
This property does not have elevators.
We have included all charges provided to us by this hotel. However, charges can vary, for example, based on length of stay or the room you book.
Recent reviews
2.1 /5 from 15 reviews
Very honest and lovely staff. Safe place for a girl travelling alone like me!
Not suitable for family to stay. Room smelly and bathroom uncleaned and in a very bad state.
Comfortable stay, close to airport
This is a hole in the wall type of place and the owner is very intrusive..no privacy at all
Is the description of this hotel not correct? Tell us


text:
|Publication number
|Publication type
|Application number
|Publication date
|Sep 1, 2009
|Filing date
|Oct 2, 2006
|Priority date
|Oct 2, 2006
|Fee status
|Also published as
|Publication number
|Mammen Thomas
|Original Assignee
|Mammen Thomas
|Export Citation
|BiBTeX, EndNote, RefMan
|Patent Citations (5), Referenced by (8), Classifications (15), Legal Events (1)
|External Links: USPTO, USPTO Assignment, Espacenet
As the process development has matured and technology has scaled to smaller and smaller dimensions, the Poly-silicon floating gate cell is approaching its scaling limitations, multi-bit storage in a single memory cell has become the norm. The use of a Nitride layer or a silicon-nodule layer capable of location specific charge storage with no spreading, allows easy implementation of multi-bit technology. If the charge is stored in the traps in the Nitride storage layer, a Oxide Nitride Oxide is used as the storage element. If charge is stored in layer of discrete silicon-nodules separated by a thin insulating film, an Oxide silicon-nodule Oxide storage element is used as the storage layer.
The multi-bit cells proposed are programmed by hot electron programming and erased either by using high Voltage tunneling, or by use of a lower voltage MIM Metal-Insulator-Metal Diode carrier generation method and technology called the Tunnel-Gun or TG.
This invention relates to the structure and method of Programmable/Erasable multi-bit Non-Volatile Memory cell technology for data storage applications.
1. Background
Multi-bit programming has been an aim of Non-volatile memory designers for a long time to increase the density of data storage capacity of the memory. In the case of standard Poly-silicon floating gate memory cells, this effort has been limited by problems of separating the bits in terms of the quantity of charge stored in the floating gate. The advances in the process technology and the continued shrinking of the cell size has made the use of traps in Nitride film in an ONO storage element acceptable for data storage in a memory cell. A feature of the Nitride film is that any charge stored at a location in the traps in the Nitride film does not move from that location or spread as the film itself is non-conductive. Similarly the use of a layer of silicon-nodules and Buckyballs separated by barrier oxide forming discrete potential wells is being disclosed as becoming a possible storage layer where on Oxide silicon-nodule Oxide (OsnO) layer is used as the storage element. This storage film due to existence of a barrier between the silicon nodules does not allow charge spreading and charge movement from the storage location, namely nodule to nodule. This feature allows storage of data at different locations in a cell if a method of programming and erasing these locations can be implemented. The use of insulated bucky balls and carbon nano-tubes are also proposed as possible storage elements. Such storage where the location of storage is fixed and charge movement is limited is called location-specific storage.
2. Prior Art
The only multi-bit prior art cell which use this location-specific storage principle today is with Nitride based storage and is the Mirror Bit shown in
The prior art Cell shown is the mirror bit cell with capability to store two bits. As erase mechanism used by the mirror bit cell is by generation of P type carriers using band to band tunneling and neutralization of electron charge induced at the diffusion by hot electron carriers, the cell is difficult to extend to more than two bit storage. The cell has buried diffusions (1 and 1 a) and consists of an ONO {Oxide (4)-Nitride (6)-Oxide (7)} layer deposed between the two buried Source/Drain diffusions (1) and (1 a), forming the storage element. In the case of this type of cell either of the diffusions can act as the source or the drain depending on the location of the bit being programmed, erased and read. The charge during programming is stored in the traps that exist in the Nitride layer (6) and is protected from leaking off during thermal cycling and read operations by the Oxide layers of the ONO storage element. A Control gate electrode (9) over lay the storage element.
The mirror-bit cell is a multi-bit cell, which is capable of storing charge at both ends of the Nitride layer at locations shown (10 and 11) in the Nitride film (6). During programming of bit 1, a high voltage of the order, typically, of 4-7 V is applied to the drain {drain diffusion} (1) with a high voltage of the order of 11V to the poly-silicon Control gate (9) and ground to the source {source diffusion}(1 a). This causes a high current flow in the channel (3) beneath the storage element with impact ionization due to hot electrons at the drain (1) junction. The Channel Hot-Electron (CHE) generation creates a large number of Electron Hole pairs at the junction. A very small portion of the generated Channel Hot-Electrons (CHE) will have a velocity component to over come the barrier of the Oxide and enter the Nitride, causing programming by accumulation of, typically, negative charge in the traps in the nitride film (6) at storage location (10). Similarly by reversing the source to (1) and drain TO (1 a) during programming will cause bit 2to be programmed at location 11. The read of the bit 1is done by reversing the source and drain used for write, with source (1) and drain (1 a) so that the location 11 is covered by the depletion region from the drain voltage while location 10 is in the channel and can modulate the conductance. Similarly bit 2is read by reversing the drain and source that is with drain (1) and source (1 a).
The erase is by applying a high voltage of 8V or higher to the junction to be erased. A negative voltage of close to −2V is applied to the Control gate causing the hot holes generated due to Band to Band (B to B) tunneling to be pulled into the Nitride and neutralize the negative charge stored in the Nitride. In order that the erase and program take place at the same location, one due to hot electron generation and the other due to B to B tunneling, using differing mechanisms and voltages, it is necessary to have very critical drain engineering. This is a very complex process and can lead to loss of yield for any variations. Typically the charge storage is limited in the Nitride to a region of the order of 200A to 400A in length around or from the location of the charge generation. The programming in addition uses high currents and voltages at the drains of the device causing high power dissipation. Another disadvantage of the cell is the need to prevent the cell from over erase. If the cell is over programmed the inherent cell leakage of un-selected cells during read will create error in read of the selected cell. This requirement makes the programming of these cells an iterative process with shut off of programmed cells as they reach a threshold. This need make the peripheral circuitry complex and design more difficult to achieve.
Some of the problems that exist with the current Nitride cells include:
Multi-bit Nitride memory cells and multi-bit silicon-nodule memory cells and other cells with location specific storage elements, with capability to store two or more bits per storage device, where storage gates and select/program gates are deposed in an alternating fashion over an integrated channel region established between a pair of Source/Drain diffusions. Each storage gate has at least two storage locations or storage nodes that are programmable by Hot-electron programming using a select/program gate in series with the storage gate enabling lower current/lowervoltage programming and erased by either Tunneling using high voltage to remove the stored charge or by use of MIM diode method (TG method) of generating carriers, in the typical case holes, to neutralize the stored charge in the location specific storage element, typically ONO with Nitride traps, or OsnO with the layer of insulated Silicon-nodules. In the case of the silicon-nodule storage, the charge storage takes place in the discrete silicon-nodules, where each nodule can store a discrete amount of charge in potential wells in silicon, similar to a trap site in Nitride. It should be understood that it is possible to use only one of the storage locations or nodes in each storage gate to reduce the complexity of program, erase and read of the cells, though two locations on each element can be used, by inter-changing the source and drain diffusions, for doubling the capacity with increased complexity of operation. For the purpose of simplicity the cell operation of the multi-bit cells are explained using Nitride trap storage. It should be understood that it is possible to replace the Nitride storage layer in most of the cells, except the one where the ONO is used as the gate dielectric under the select/program gate, by the silicon-nodule layer, bucky ball layer or other lacation-specific material layer with no differences in program and erase operations as will be well known to the practitioners of the art.
What is disclosed is a method of programming a memory cell having select/program gates inter-spaced with storage gates which enable the use of low current programming by hot electron generation and erase by FN-Tunneling or TG carrier generation method. The programming takes place by using the velocity saturated carriers form a select/program gate that is biased in pinch off (just on for low current) with a reasonably high voltage applied to the drain to cause hot carriers to be generated, a portion of which has enough energy to overcome the oxide barrier and get into the storage element and get stored in the traps in the nitride or stored in the potential wells of the discrete silicon-nodules. The multiple alternating select/program gates, and storage gates allow multiple programming nodes or locations to be deposed between a pair of source/drain diffusions. The select/program gates comprise a gate oxide over a channel region and a conductive select/program gate layer over the gate oxide. A nitride based storage gate will comprise of a Nitride storage layer in an ONO storage element paced over a channel region, under laying a conductive control gate layer, with storage nodes at either end of the storage element. Similarly a silicon-nodule based storage gate will comprise of a silicon-nodule storage layer in an OsnO storage element placed over a channel region, under laying a conductive control gate layer, with storage nodes at either end of the storage element.
As the program charge is stored in the traps in Nitride layer, or in the discrete silicon-nodules in the silicon-nodule storage layer, the charge do not spread or move, and it is possible to have one or two or more program locations in a single device, based on the program, erase and read capability established allowing a specific locations in a storage element to be charged. In the cells described each storage element is capable of one or two bits of storage. By spacing the diffusions away from the storage node the diffusions can be made standard source/drain diffusions reducing the complexity of drain engineering. By having select/program gates, on either side of the storage gate, it is possible to have up to two bits of data stored in each storage gate. By having multiple storage gates and select/program gates in the memory cell, between a pair of diffusions (source/drain diffusions) the number of bits stored per cell can be increased. (Detailed explanation of the operation is provided later in the disclosure.) By having a number of storage elements made up of ONO in the case of Nitride trap storage or OsnO in the case of silicon-nodule storage, within one cell this method of programming allow multi-bit storage with reduced area usage. The cell is hence made of multiple storage gates and select/program gates deposed in an alternating fashion, over an integrated channel, between two standard diffusion regions as shown in
Erase is possible by use of the Fouler-Nordheim tunneling that is well known in the Non-volatile memory industry or by the TG technology that is proposed. The cells using FN tunneling for erase are shown in FIG. 3,4
What is also disclosed is the use of TG technology for efficient erase of the Nitride and silicon-nodule based cells as an alternative to FN tunneling. The
FIG. 9,10 and
The main objects of the invention are as follows: The first object is to provide a group of MMT (Multi-bit non-volatile Memory Technology) based cells using traps in the Nitride layer for storage of data, in an ONO based storage element where in the density of storage can be increased by using multi-bit storage in the cell at defined locations in the Nitride layer. The MMT technology allows cells to be expanded to store multiple bits of data using an alternating combination of select/program element or gate and storage gate, where the storage gate consists of an ONO storage element under a control poly-silicon conductive layer.
A second object is to provide an alternate group of MMT (Multi-bit non-volatile Memory Technology) based cells using discrete silicon areas in the silicon-nodule layer for storage of data, in an OnsO based storage element where in the density of storage can be increased by using multi-bit storage in the cell at defined locations in the silicon-nodule layer. The MMT technology allows cells to be expanded to store multiple bits of data using an alternating combination of select/program element or gate and storage gate, where the storage gate consists of an OnsO storage element, under a control poly-silicon conductive layer, instead of the ONO layer described in object one.
A third object is to have a programming scheme that allows more than two storage nodes to be programmed per cell, increasing the capability to program one or two storage nodes per storage element with one to a multiple of storage elements being available per cell.
Another object is to have a more robust cell where in the use of the select/program elements reduce the programming current and hence the power dissipation during program operation.
A fifth objective is to reduce the design complexity by making over erasure of the cell and the associated leakage current of the un-selected cells on a bit line, a non issue during read of the selected memory cell by providing select gates that can be turned off in the un-selected cells during read operation.
Another object is to allow the cells to operate either in depletion or in shut off during program and erase, reducing the complexity of design.
Another object of the disclosure is to provide a wider margin of voltage between erased and programmed states to allow multiple levels of programming at a node for additional bits of storage.
Another object is to provide a cell that uses known high voltage tunneling (FN tunneling) for erasure of the data stored in a group of elements or all elements in the cell at a time.
A Ninth object is to provide a different method of erasure of the Nitride storage cell, and the silicon-nodule storage cell, namely the TG method
Another object is to use the TG method of erasure to reduce the high voltage needed for tunnel erase.
Another object is to reduce the dependence on critical drain engineering for program at the drain depletion by channel Hot Electrons and erase based B to B tunneling of the prior art cells by use of the methods of program and erase disclosed.
Some of the advantages of the disclosed structures and methods are:
Prior Art Mirror Bit Cell (
MMT-1 Cell, (
MMT-7 Cell,
Multi-bit cells with storage in trap locations in Nitride and in potential wells in isolated (discrete) silicon nodules are disclosed. The cells are all capable of being programmed by hot electron programming (Channel Hot Electron or CHE), the preferred being a modified low current hot electron programming method, and erased by one of the two methods, FN tunneling from the storage sites due to applied potential or a lower voltage alternate disclosed method of erase that is by use of MIM (Metal-Insulator-Metal) for generating carriers of the opposite type from those used for program, and collection of part of the carriers so generated by the storage locations to erase the cells. This method used for energetic carrier generation is called the Tunnel-Gun or TG method. It should be noted that the TG method is capable with the right voltage application and choice of electrodes of generating either the positive or negative charge carriers. The application described is a typical one where the cell described is a n-channel cell where the erase is by generating energetic holes for collection in the storage layer for erase of the cell. Multiple cells have been disclosed using these methods of program and erase, that are capable of storing two bits to a larger number of bits in a cell.
In order to simplify the description of the technology and the cells, the 4 bit cell shown in
The ONO storage element is made up of a stack comprising a silicon dioxide layer on silicon (5 a or 5 c), a Nitride layer (6 a, or 6 c) and a second Oxide layer (7 a or 7 c). The Nitride layer forms the storage layer and the charge carriers during programming are stored gets trapped in the trap sites that exist in the Nitride layer. Since the Nitride layer is non conductive the stored charge remains localized and does not spread throughout the storage layer. The two oxide layers form barrier layers on top and bottom, to prevent unwanted charge loss or accumulation in the Nitride.
In the alternate silicon-nodule storage, the OsnO storage element replaces the ONO storage element in the storage gates of the cells in the group, except for the cell in
In the typical implementation shown the storage gates have the storage element as the gate dielectric under a poly silicon conducting control gate layer while the select/control gates have an oxide dielectric under a poly-silicon conducting select/program gate layer.
As indicated earlier one implementation where the ONO layer cannot be replaced completely by the silicon-nodule layer is the implementation shown in
In all the cells shown there are two storage locations or storage nodes (10 a to 10 m and 11 a to 11 m) per storage element in a storage gate that can be programmed. It is also possible to only program one location per storage gate, rather than two for simplicity of operation.
Per example of the four bit cell in
The storage gates are separated from the diffusions (source/drain diffusions) (2 and 2 x) and each other by the three select/program gates, a first select/program gate (select/program gate 0) adjacent to the diffusion (2) on one side and the first storage gate on the other side, a second select/program gate (select program gate-b) separating the two storage gates (storage gate-a and storage gate-c) and a third select control gate (select control gate-d) adjacent to the diffusion (2 x) and the second storage gate (storage gate-c)
The first select/program gate-0 comprise the gate oxide layer (5) over lying the channel (4) over which is deposed the conductive select/program element or select/program gate layer (9). Similarly the second select/program gate-b comprise the gate oxide layer (5 b) over lying the channel (4 b) over which is deposed the conductive select/program element or select/program gate layer (9 b) and the third select/program gate-d comprise the gate oxide layer (5 d) over lying the channel (4 d) over which is deposed the conductive select/program element or select/program gate layer (9 d).
The channel in silicon between the diffusions is an integrated channel that lies in the silicon beneath the gate dielectrics of the set of gates, in order, select/program gate-0, storage gate-a, select/program gate-b, storage gate-c and select/program gate-d.
The second group of cells, represented by
The operation of the MMT cells are also explained using the four bit cells of
Taking the
a. The diffusion 2 x is made the drain diffusion and diffusion 2 is made the source diffusion. A reasonably high voltage of sufficient magnitude, typically 3 to 7 V is applied to the drain diffusion closer to opposing end of the storage element where the storage node being programmed reside, that is for programming node 10 a the drain voltage is applied to drain 2 x.
b. The unselected storage gate (storage gate-c) has high voltages applied to it through the control gate layer (8 c) such that this gates has voltage sufficient to fully turn on the channel (4 c) under the gate irrespective of whether the storage nodes (10 c and 11 c) in the nitride storage layer (6 c) of the storage gate have been previously programmed or left un-programmed, typically in the range of 3 to 5 V.
c. The unslected select/program gates (select/program gate-b and d) have enough voltage applied to them through the control gate layer (9 b and 9 d) to turn them, namely the channel regions (4 b and 4 d) controlled by them fully on, typically again in the 3 to 5V range.
d. A high collection voltage is applied to the control gate layer (8 a) of the selected storage element where in the storage node (10 a) reside, turning on the channel under the storage element. The typical voltages are in the 3 to 8V range.
e. Apply a voltage, on the selected select/program gate, adjacent the storage node (10 a), through the selected control gate layer (9), such that the channel (4) of the select/program gate is just turned on, typically in the 0.3 to 1V range.
The channel of the selected select/program gate will hence operate in a pinched off condition allowing limited current flow. Electrons from the source (2) will flow to the drain limited by the gate potential on the selected select/program gate layer (9) This will allow the carriers, typically electrons, in the channel to achieve saturation velocity or close to it. When they encounter the high field at depletion region at the selected node due to the drain voltage passed through by the fully turned on unselected storage and select/program gates, the carriers will achieve the hot carrier status in the high field and enable CHE programming at the node due to the existing high collection voltage on the gate. The carriers that overcome the barrier will be trapped in the discrete trap sites that exist in the Nitride layer (6 a) or alternately the discrete potential wells that exist in the silicon-nodule layer (6 a) at the selected storage node and be stored.
If the next bit has to be programmed on the same storage element, at the storage node 11 a, the procedure is similar. The diffusion 2 which is on the opposing end of the storage element where the storage node 11 a is is made the drain diffusion and the diffusion 2 x is now the source diffusion. The selected storage gate is still storage gate-0 while the selected select/program gate is select/program gate-b. The unselected gates are biased with high voltages to provide a low resistance path for the current and minimum voltage drops in the channel under the gates. The selected storage gate is biased with high voltage on the control gate layer, to enable collection of the hot-carriers generated adjacent the storage node in depletion region of the channel under the influence of the drain voltage. The hot carriers are generated due to the velocity saturated carriers produced by the pinched off channel of the turned on select program gate which is in a low current saturation condition due to the low turn on voltage applied the select/program gate layer of the select/program gate-b and the depletion field due to the drain voltage. Part of these carriers with the correct velocity component will be accelerated towards the barrier oxide by the collection voltage applied to the control gate layer of the storage gate and will overcome the barrier to get collected in the storage element at the selected storage node.
The erase uses two methods. One is the standard Fouler-Nordheim (FN) tunneling method as applied to
The FN tunneling is a well known phenomena but it has been found that this is not the best way to erase the Nitride or the silicon-nitride based cells. This is due to the fact that FN tunneling requires very high voltage gradients to extract the charge especially from the traps and cause them to tunnel out through the barrier oxide. A better erase method is by generating carriers of the opposite charge which can the be allowed to neutralize the charge in the traps and the potential wells. The prior art described uses the Band to Band tunneling in a high doped junction to create holes which are then attracted to the traps to do the erase.
The second method of erase is by use of Metal-Insulator-Metal diode method or TG method of generating the required type of carriers, which are then used to erase the data at the storage nodes that is explained by use of
In most cases the positive charge will accumulate in the storage element at all locations including the storage node during an erase. This will leave the storage gate in a depletion mode. The existence of the select gates are essential, under the depletion conditions of the storage gates, to make sure that the unselected memory cells do not conduct (provide leakage current) and create false reads during the read of a selected node of a selected cell.
Even though a hole injection based erase of an N-channel memory cell which programs using electrons is described, the TG structure is capable of generating electrons for program or erase of a memory cell. The doping of the poly-silicon and the applied voltage gradient need to be altered for this purpose as will be known to any practitioners of the art.
Reading the Cell:
Typical way to read the stored data from the cell is explained in the following description. Other ways of reading data are possible with application of different voltages to the cell gates as will become evident to those who are conversant with the memory cell and work with it.
The cell is read out by choosing a specific storage node for the read operation. In both the implementations shown,
Assuming that the storage node 10 a on storage layer 6 a is being read out, the diffusion 2 x is made the drain by applying a read voltage to it and diffusion 2 is made the source. All the select/program gates are turned on hard by applying sufficient voltage to the select/program gate layers (9,9 b and 9 d) to have the gates in full conduction with the channel (4, 4 b and 4 d) associated with the gates in the on condition, that is conducting. All the storage gates except the selected storage gates where the node (10 a) exist are turned on with fully, with conducting channels (4 c) in full conduction by application of a sufficiently high voltage to the control gate layer (8 c) or TG stack layers (18 c and 20 c) of the unselected storage gate to ensure the channel is fully on even under the condition where the storage nodes (10 c and 11 c) are programmed. A voltage sufficient to turn on the channel (4 a) of the selected storage gate is applied tom the control gate layer (8 a) or the TG stack layers (18 a an 20 a) such that the cell is in conduction if the storage nodes (10 a and 11 a) are with 0 charge or in the neutral condition.
Due to the application of the drain voltage at diffusion 2 x, with all gates to the selected gate in the fully on condition the voltage applied is transmitted to the edge of the selected gat with minimum resistive drop due the channel resistance. A depletion region will exist at the edge of the selected cell which will tend to mask out and reduce the effect of the state of storage node 11 a and allow the read current to be mainly dependant on the node 10 a. Thus allowing the 10 a node status (programmed or erased) to be read out.
Now if node 11 a has to be read a similar procedure is done but diffusion 2 is made the drain diffusion while diffusion 2 x is made the source diffusion. This allows the influence of node 10 a to be masked by the depletion region from the voltage applied to drain 2 transmitted over to the selected storage gate edge allowing the status of node 11 a to be the major influence on the read current, allowing it to be determined. Other storage nodes of the cells 10 c and 11 c can also be read out in a similar fashion as the nodes 10 a and 11 a.
|Cited Patent
|Filing date
|Publication date
|Jul 18, 2002
|Nov 25, 2003
|Seiko Epson Corporation
|Nonvolatile semiconductor memory device
|Jul 2, 2001
|May 1, 2007
|Massimo Atti
|Charge coupled EEPROM device and corresponding method of operation
|Apr 17, 2006
|Mar 10, 2009
|Sandisk Corporation
|Flash memory cell arrays having dual control gates per memory cell charge storage element
|Sep 7, 2005
|Sep 7, 2006
|Saysamone Pittikoun
|Non-volatile memory and manufacturing method and operating method thereof
|Dec 9, 2008
|Apr 2, 2009
|Powerchip Semiconductor Corp.
|Method of operating non-volatile memory array
|Citing Patent
|Filing date
|Publication date
|Nov 4, 2008
|Jul 5, 2011
|Macronix International Co., Ltd.
|Operation methods for memory cell and array for reducing punch through leakage
|Jun 13, 2011
|Mar 20, 2012
|Macronix International Co., Ltd.
|Operation methods for memory cell and array for reducing punch through leakage
|Jun 13, 2011
|Jul 10, 2012
|Macronix International Co., Ltd.
|Operation methods for memory cell and array for reducing punch through leakage
|Nov 4, 2008
|Feb 5, 2013
|Macronix International Co., Ltd.
|Operation methods for memory cell and array thereof immune to punchthrough leakage
|Jul 26, 2011
|Aug 20, 2013
|Micron Technology, Inc.
|Memory cells and methods of storing information
|Nov 4, 2008
|May 7, 2009
|Macronix International Co., Ltd.
|Operation methods for memory cell and array for reducing punch through leakage
|Nov 4, 2008
|May 7, 2009
|Macronix International Co., Ltd.
|Operation methods for memory cell and array thereof immune to punchthrough leakage
|Jan 31, 2013
|Micron Technology, Inc.
|Memory Cells and Methods of Storing Information
|U.S. Classification
|365/185.05, 365/185.17, 365/185.18, 365/185.28, 365/72, 365/185.29
|International Classification
|Cooperative Classification
|European Classification


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2004 Porsche 911 Carrera Coupe
Guards Red Exterior
Savanna Beige Interior
5 Speed Tiptronic-S Automatic / 3.6 Liter DOHC 24V VarioCam Flat 6 Cylinder
2016 Porsche Macan S
Black Exterior
Black Interior
7 Speed PDK Automatic / 3.0 Liter DFI Twin-Turbocharged DOHC 24-Valve VarioCam Plus V6
2014 Porsche 911 Carrera 4S Cabriolet
White Exterior
Black Interior
7 Speed Manual / 3.8 Liter DFI DOHC 24-Valve VarioCam Plus Flat 6 Cylinder
2013 Porsche Boxster
White Exterior
Black Interior
7 Speed PDK Dual-Clutch Automatic / 2.7 Liter DFI DOHC 24-Valve VarioCam Plus Flat 6 Cylinder
2012 Porsche Cayenne
Amethyst Metallic Exterior
Black Interior
8 Speed Tiptronic-S Automatic / 3.6 Liter DFI DOHC 24-Valve VVT V6
All data is provided for informational purposes only, is subject to change without notice, and should be verified with the seller before purchase. All listed prices do not include any applicable state, federal or local tax, registration, title, destination, dealer documentary fees, emissions testing fees, insurance or finance fees.


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After a disasterous fire, this Dullstroom farmhouse was lovingly rebuilt and redecorated. See more of it HERE
This month we're giving away loads of amazing prizes. Enter HERE
Try this quick and easy recipe for pumpkin fritters
Annie Sloan launches Chalk Paint waxes in black and white. Read all about it HERE
Join us on a wonderful weekend tour of the Cape's wildflower kingdom as millions of daisies, vygies and more put on a spectacular spring show.