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Liverpool Message Board
LupoRossoNero LupoRossoNero Feb 22, 2008 21:36 Flag
Hello guys, please excuse my intromission in this forum.
I'm an Italian Milan AC fan (that's right, the red&black side in Milan, or should I say the ONLY side IN Milan...).
All I'd like to say is, the past clashes between our clubs are regarded by us as PAST clashes...what's in te past, stays in the past: we probably played better in Instambul, though you won, and you probably played marginally better in Athens (though it must be said it wasn't exactly a spectacular match).
NOW, THOUGH, I feel I can speak for all fans of my club when I say we're behind you a 100% for the return leg.
The arrogance of these buffoons is becoming intolerable.
Do you know what their incompetent president said today?
Something like "In 90 minutes 15 goals can be scored".
PLEASE CRUSH THEM TOTALLY, COMPLETELY, AND UTTERLY........and after that let's all go for a pint together!!
;-DSort: Newest | Oldest | Most Replied Expand all replies
A Yahoo! User Feb 23, 2008 08:25 Flag
Do I look like a bloke to you???
A Yahoo! User Feb 23, 2008 08:24 Flag
howl.... stop it, you cracking me up mate !!
A Yahoo! User Feb 23, 2008 08:17 Flag
You naughty boy! I knew there was a reason why I did not get Valentines card from you this year? If I ever get my hands on this Audrey....
Boo hoo hoo......
A Yahoo! User Feb 23, 2008 08:16 Flag
You naughty boy! I knew these was a reason why I did not get Valentines card from you this year? If I ever get my hands on this Audrey....
Boo hoo hoo......
A Yahoo! User Feb 23, 2008 08:13 Flag
hahahahahaha..... so I'm howlfc as well?
muppet !!
I thought you retired her profile because of total embarrassment ??
A Yahoo! User Feb 23, 2008 08:03 Flag
What happened to your make-belief "french bird"?
Never heard from her after what howlfc did to ya both.....
har har !!
A Yahoo! User Feb 23, 2008 07:57 Flag
I try not to laugh at him dogs but he spends all day and night on the liverpool board and keeps embarrassing himself and I can't help but take the piss out of him he takes it all too seriously. Nobody likes him, he comes on here to get abuse because even though people think he's a muppet at least he has someone to talk to.
Thanks dogs that explains why his posts are so hard to follow, half the time I aint got a clue who he's writing to or what about, I don't think he does either. I swear he argues with himself on this and gets confused at times and then argues with his other ids. sean is disabled and retarded but he makes us all laugh so much. I'm glad he has no kids what a shiit life they'd have. What a disgrace he'd be to them. Comedy bloke.
A Yahoo! User Feb 23, 2008 07:55 Flag
I'm always right you tube....
.........you should feel privileged, you in the presence of a genius.....
A Yahoo! User Feb 23, 2008 07:47 Flag
so, to find your house is going to be pretty easy....
...all I do is look for an earth station in a back garden...
A Yahoo! User Feb 23, 2008 07:42 Flag
trust me, he's in his 20's and consigned to a wheelchair. He needs one of those special tools to type, hence he gets all the words wrong and mixed up.
We mustn't laugh too much at him.
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Polly - your beautiful voice is smooth as silk and flow over your lyrics like warm honey.. "February" is a touching piece - great work
Fine compelling well-crafted well-performed compositions.
Sweet! I love your voice, Polly. Excellent harmonies too. All the best in 2012 and beyond.
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Loved Quicksand...really great song. I like your voice.


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|Publication number
|Publication type
|Application number
|Publication date
|Sep 11, 2001
|Filing date
|Jan 11, 2000
|Priority date
|Mar 21, 1997
|Fee status
|Also published as
|Publication number
|Fred N. Hause, Mark I. Gardner
|Original Assignee
|Advanced Micro Devices, Inc.
|Export Citation
|BiBTeX, EndNote, RefMan
|Patent Citations (13), Referenced by (2), Classifications (20), Legal Events (4)
|External Links: USPTO, USPTO Assignment, Espacenet
This Application is a Continuation of U.S. Ser. No. 09/159,905 filed Sep. 24, 1998 now abandoned which is a Divisional of U.S. Serial No. 08/822,122 filed Mar. 21, 1997 which issued as U.S. Pat. No. 5,861,335 on Jan. 29 1999.
1. Field of the Invention
This invention relates to integrated circuit fabrication and, more particularly, to a transistor and a method of forming a transistor using pressurized nitrogen during a post implant anneal cycle to minimize migration of the implant species into critical areas.
2. Description of the Relevant Art
Fabrication of a metal-oxide semiconductor ("MOS") transistor is well known. The manufacture of an MOS transistor begins by defining active areas where the transistor will be formed. The active areas are isolated from other areas on the semiconductor substrate by various isolation structures formed upon and within the substrate. Isolation structures come in many forms. For example, the isolation structures can be formed by etching trenches into the substrate and then filling the trenches with a dielectric fill material. Isolation structures may also be formed by locally oxidizing the silicon substrate using the well recognized LOCOS technique.
Once the isolation structures are defined between transistor active areas, a gate dielectric is formed. Typically, the gate dielectric is formed by thermal oxidation of the silicon substrate. Thermal oxidation is achieved by subjecting the substrate to an oxygen-bearing, heated ambient in, for example, an oxidation furnace or a rapid thermal anneal ("RTA") chamber. A gate conductor material is then deposited across the entire dielectric-covered substrate. The gate conductor material is preferably polycrystalline silicon, or polysilicon. The polysilicon layer is then patterned using a photolithography mask. The mask allows select removal of a light-sensitive material deposited entirely across polysilicon. The material which is exposed can, according to one embodiment, be polymerized, and that which is not exposed removed. Selective polymerization is often referred to as the "develop" stage of lithography. The regions which are non-polymerized are removed using the etch stage of lithography.
An n-channel transistor, or NMOS transistor, must in most instances be fabricated different from a p-channel transistor, or PMOS transistor. NMOS transistors employ n-type dopants on opposite sides of the NMOS gate conductor, whereas PMOS transistors employ p-type dopants on opposite sides of the PMOS transistor gate conductor. The regions of the substrate which receive dopants on opposite sides of the gate conductor are generally referred to as junction regions, and the distance between junction regions is typically referred to as the physical channel length. After implantation and subsequent diffusion of the junction regions, the distance between the junction regions become less than the physical channel length and is often referred to as the effective channel length ("Leff"). In high density designs, not only does the physical channel length become small, so too must the Leff. As Leff decreases below approximately 1.0 μm, for example, a problem known as short channel effects ("SCE") becomes predominant.
A problem related to SCE, and the subthreshold currents associated therewith, but altogether different is the problem of hot-carrier effects ("HCE"). HCE is a phenomenon by which hot-carriers ("holes and electrons") arrive at or near an electric field gradient. The electric field gradient, often referred to as the maximum electric field ("Em"), occurs near the drain during saturated operation. More specifically, the electric field is predominant at the lateral junction of the drain adjacent to the channel. The electric field at the drain causes primarily electrons in the channel to gain kinetic energy and become "hot" . These hot electrons traveling to the drain lose their energy by a process called impact ionization. Impact ionization serves to generate electron-hole pairs, wherein the pairs migrate to and become injected within the gate dielectric near the drain junction. Traps within the gate dielectric generally become electron traps, even if they are partially filled with holes. As a result, there is a net negative charge density in the gate dielectric. The trapped charge accumulates with time, resulting in a positive threshold shift in the NMOS transistor, or a negative threshold shift in a PMOS transistor. It is known that since hot electrons are more mobile than hot holes, HCE causes a greater threshold skew in NMOS transistors than PMOS transistors.
Unless modifications are made to the fabrication sequence, problems resulting from HCE will remain. To minimize these problems, a mechanism must be derived that disperses and thereby reduces Em. That mechanism is often referred to as the double-diffused drain ("DDD") and lightly doped drain ("LDD") techniques. The purpose behind using DDDs and LDDs structures is to absorb some of the potential into the drain and away from the drain/channel interface. The popularity of DDD structures has given way to LDD structures since DDD causes unacceptably deep junctions and deleterious junction capacitance.
A conventional LDD structure is one whereby a light concentration of dopant is self-aligned to the edge of the gate conductor. The light-dopant concentration is then followed by a heavier-dopant concentration which is self-aligned to a spacer formed on the sidewalls of the gate conductor. The purpose of the first implant dose is to produce a lightly doped section within the junction at the gate edge, near the channel. The second implant dose within the junction is spaced from the channel a distance dictated by the thickness of the sidewall spacer. Resulting from the first and second implants, a dopant gradient occurs across the junction from the source/drain area of the junction to the LDD area adjacent the channel.
The LDD implant solves to some extent the HCE problem, but does so at a cost. Dispersion of Em requires that the LDD implant area be sufficiently large near the critical drain-side of the channel. Due to the symmetrical nature of the LDD implant, the large LDD implant area at the drain also occurs near the source-side of the channel. Thus, the LDD implant adds significant parasitic resistance and capacitance to the source-drain path of the ensuing transistor. The added resistance/capacitance is compounded to some extent by migrating LDD dopants during subsequent heat cycles. While heating is necessary to repair implant damage and activate the dopants within the crystalline lattice, heating unfortunately spreads the LDD area toward critical channel and overlying gate dielectric regions. Heating used to repair implant is often referred to as "anneal" . Annealing the crystalline substrate is necessary post implant. Depending upon the amount of implant damage, the anneal temperature can vary. For example, small point defects, or clusters of irregularly arranged lattice areas can be re-oriented to their proper positions using a relatively low temperature anneal. However, if the localized defect areas become amorphized, or the amorphized region is continuous throughout the implant layer, then a much higher anneal temperature is needed. Typically, the anneal temperature needed to repair amorphized or heavy primary crystalline damage ranges between 850� C. to 1050� C.
As a byproduct to the anneal cycle, dopants within the LDD segregate and migrate in a vertical as well as horizontal direction. Diffusion causes enlargement of the LDD area, leading to enhanced parasitic problems. Further, diffusion of LDD dopants into the channel causes enhanced SCE problems. While it is necessary to anneal implant damage from the crystalline lattice, it would be desirable to do so with minimal migration of the implanted dopant. More specifically, a process must be derived which can carefully control implants placed close to critical areas—i.e., control of the LDD dopants placed closer to the channel than other implant areas is needed. Control implies placing limits on the diffusion length of the LDD dopants toward the critical areas. The improved process must be one which can minimize HCE and the problems of hot carriers injected from the drain-side LDD into the gate oxide.
The problems outlined above are in large part solved by an improved transistor configuration, and a method for forming the improved configuration. The present transistor can be either a PMOS or NMOS transistor, and accordingly, the present process is applicable to any MOS fabrication sequence, including a CMOS sequence.
The present transistor is classified as having a graded junction defined as a junction containing a lighter concentration, lower energy LDD implant placed adjacent the channel and heavier concentration, higher energy source/drain implant spaced from the channel. The LDD region is designed such that barrier atoms exists along migration avenues at a critical perimeter of the LDD area. The barrier atoms comprise nitrogen, oxygen, argon and/or hydrogen. Preferably, the barrier atoms comprise only nitrogen. The nitrogen exists as atoms at the critical juncture between the implanted LDD area and the channel which separates the LDD from another LDD. Nitrogen atoms serve to minimize migration or diffusion of the LDD dopants from their implanted position during anneal.
According to one embodiment, nitrogen is incorporated into the critical LDD areas concurrent with implanting the LDD dopants. According to an alternative embodiment, nitrogen is incorporated after LDD implant but concurrent with the anneal cycle. Regardless of the sequence by which nitrogen is incorporated, it is of benefit that the nitrogen be pressurized so that it extends to the horizontal and vertical perimeter of the LDD area. Importantly, pressurization is believed to "drive" the nitrogen atoms into the crystalline lattice and, particularly, near the channel/LDD interface. If nitrogenation occurs during anneal, pressurization helps minimize the amount of temperature needed to repair implant damage. Reduced temperature, however, is still sufficient to drive nitrogen into the channel/LDD interface.
Nitrogen is pressurized within a chamber used for implanting the LDD dopants or for annealing those dopants. The pressure level preferably exceeds atmosphere pressure. According to one embodiment, nitrogen within the nitrogen delivery chamber is pressurized above 3.0 atmospheres. Pressurizing nitrogen within either the ion implant chamber or the anneal chamber causes sufficient indoctrination of nitrogen at critical barrier sites so as to control distribution of LDD dopants during anneal. Typically, LDD dopants are of light dopant concentrations and therefore do not cause significant amorphizing of the crystalline lattice. A lower temperature anneal can be preformed providing, however, the nitrogen barrier atoms are in place. It is postulated the higher pressure not only helps place nitrogen, but also may help redistribute the silicon atoms. The moving nitrogen atoms might carry, to a lesser extent, silicon atoms from an irregular bond site to a more normal site. It is believed the higher pressure offsets, to some degree, temperature—higher pressure correlates to lower temperature up to a point of diminishing return.
Pressurization appears to carry the barrier atoms not only to the channel/LDD interface, but also to the gate dielectric. The barrier atoms, e.g., nitrogen in the channel/LDD interface serve not only to prevent LDD encroachment, but also to prevent channel dopant out-diffusion. Nitrogen atoms in the gate dielectric minimize injection of hot carriers from the drain-side LDD to the gate dielectric. Nitrogen atoms within the paths of the migratory dopants and/or hot carriers serve to substantially block their passage. The result being a consistently formed transistor which demonstrates high reliability in the field.
Broadly speaking, the present invention contemplates a method for forming an integrated circuit. The integrated circuit comprises a plurality of transistors, including NMOS and/or PMOS transistors. The integrated circuit is formed by the steps of providing a semiconductor substrate having an active area adjacent a field area. A gate conductor is patterned a dielectric spaced distance over the active area. The dielectric spaced distance is a distance occupied by a gate dielectric. A dopant is then implanted at a first concentration into a portion of the active area that is absent the overlying gate conductor. The implanted portion of the active area is an LDD area comprising a relatively light, first concentration of the dopant. The dopant is then annealed within a chamber containing nitrogen gas. The chamber is both heated and pressurized to repair damage resulting from the implanting step while substantially maintaining a lateral demarcation within the active area between a region defined by the LDD dopant and another region (i.e., channel region) absent the dopant. According to one embodiment, the chamber containing nitrogen is pressurized above 3.0 atmospheres. According to another embodiment, the chamber is heated to a temperature less than 800� C. The lower anneal temperature of 800� C. will adequately anneal implant damage from the substrate providing, however, that pressurized nitrogen gas is delivered concurrent with the implant or anneal step.
The present invention further contemplates a transistor. The transistor comprises a gate conductor spaced by a gate dielectric over a channel. The channel comprises a portion of an active region within a semiconductor substrate. A first implant region is bounded within the active region laterally outside of the channel. A second implant region is bounded within the active region a spaced distance outside of the channel. A plurality of nitrogen atoms accumulate partially within a juncture between the first implant region and the channel as well as within a juncture between the channel and the gate conductor proximate to the first implant region. The plurality of nitrogen atoms preferably occupy avenues of migration of the first plurality of dopants into the channel. As such, the demarcation between the first implant region and the channel moves less than approximately 0.5 microns post-anneal as a result of migration avenues being occupied. Accordingly, nitrogen serves as a barrier to reduce LDD diffusion lengths as well as to reduce injection of hot carriers into the gate oxide near the drain-side of the channel.
Other objects and advantages of the invention will become apparent upon reading the following detailed description and upon reference to the accompanying drawings in which:
FIG. 1 is a cross-sectional view of a semiconductor topography having gate conductors dielectrically formed upon active areas between field dielectrics spaced upon or within a semiconductor substrate;
FIG. 2 is a cross-sectional view of the semiconductor topography, wherein a gate conductor and adjacent active area are selectively exposed in a process step subsequent to FIG. 1;
FIG. 3 is a cross-sectional view of the semiconductor topography, wherein the gate conductor and adjacent active area receive dopants of a first concentration prior to anneal in the presence of a pressurized barrier ambient;
FIG. 4a is a detailed view along area 4 of FIG. 3, illustrating the effects of barrier atoms occupying diffusion avenue at the channel/LDD juncture.
FIG. 4b is a detailed view along area 4 of FIG. 3, illustrating the effects of barrier atoms occupying hot carrier injection sites near the channel/gate dielectric juncture proximate to the drain-side of the channel;
FIG. 5 is a cross-sectional view of the semiconductor topography, wherein the steps of FIGS. 2 and 3 are repeated for another gate conductor and associated active area implanted opposite the first gate conductor and associated active area;
FIG. 6 is a plan diagram of an ion implanter retrofitted to accept pressurized barrier gas needed to perform in-situ implant or in-situ anneal; and
FIG. 7 is a flow diagram of steps used to pressurize a barrier gas, and to incorporate barrier atoms into critical juncture areas for achieving a reduced temperature anneal and controlling implant migration.
While the invention is susceptible to various modifications and alternative forms, specific embodiments thereof are shown by way of example in the drawings and will herein be described in detail. It should be understood, however, that the drawings and detailed description thereto are not intended to limit the invention to the particular form disclosed, but on the contrary, the intention is to cover all modifications, equivalents and alternatives falling within the spirit and scope of the present invention as defined by the appended claims.
Turning now to the drawings, FIG. 1 illustrates a partial, cross-sectional view of a semiconductor topography 10. Topography 10 comprises a silicon-based substrate 12, preferably made of single crystalline silicon lattice. Substrate 12 includes numerous features formed upon and within the upper surface of topography 10. For example, field dielectrics 14 are formed at spaced distances across an upper surface of substrate 12. Field dielectric 14 exists only in field or "isolation" areas, between which active areas 16 exists. Active areas 16 encompass numerous active or passive devices and are connected with one another to form an integrated circuit. For sake of brevity and clarity in the drawings, the interconnect between devices is not presented herein. It is understood, however, that interconnect does exist over field dielectrics between devices in active areas to form an integrated circuit.
Existing within active areas 16, as shown in FIG. 1, are gate conductors 18. Gate conductors, as well as underlying gate dielectric 20, are formed by depositing a conductive (or to-be-rendered conductive) material across topography 10 and then patterning that material using well-known lithography techniques. A result of the lithography process is a gate conductor and an underlying gate dielectric self aligned to the gate conductor, wherein the combination of gate conductor 18 and gate dielectric 20 exist across only a portion of active area 16.
The portion of active area 16 not covered with gate conductor 18 will receive an implant. FIG. 2 depicts a masking layer 22 formed across select gate conductors 18 b while leaving exposed other gate conductors 18 a. Masking layer 22 is preferably made of a material which can be selectively polymerized. Accordingly, layer 22 comprises a photoresist material which, when selectively polymerized, allows non-polymerized material to be removed. The removed material leaves a portion of topography 10 exposed. That portion is preferably one that receives a specific type of implant. For example, the exposed topography 10 may receive an n-type implant. A reversal of the patterned masking layer 22 allows for p-type implants in active areas exclusive of the n-type implants.
FIG. 3 depicts a lightly doped drain (LDD) dopant forwarded into the exposed topography 10 at a first concentration density. The LDD implant, denoted as reference numeral 24, if forwarded nearly perpendicular to topography 10. Resulting from implant 24, LDD regions 26 occur within substrate 12. Regions 26 are self-aligned with lateral edges of gate conductor 18 a and field regions 14 in accordance with the well-known self-aligned process.
Concurrent with, or subsequent to, implant 24, barrier atoms are incorporated into LDD regions 26. Barrier atoms comprise nitrogen, oxygen, nitrogen and oxygen, nitrogen and hydrogen, oxygen or argon, for example. Preferably, the barrier atoms comprise nitrogen atoms. Hereinafter, the barrier atoms are referred to as nitrogen atoms to denote inert barrier atoms in general. The nitrogen atoms derive from a gaseous species forwarded into the ion implant chamber in the first instance or, alternatively, nitrogen gas can be imparted into the thermal anneal chamber after implantation. Regardless of when nitrogen is introduced, the nitrogen atoms settle at bond opportunities within the implant-disrupted substrate 12 as well as non-stoichiometric portions of gate dielectric 20 a.
FIG. 3 illustrates one of possibly two different process sequences. In the first instance, nitrogen is incorporated with ion implantation, followed by a conventional thermal anneal. According to a second scenario, nitrogen is incorporated during chamber being heated to effectuate simultaneous implant, nitridation and anneal. In the third instance, nitrogen is incorporated concurrent with anneal, subsequent to ion implantation. Regardless of the scenario, nitrogen is incorporated under elevated pressure conditions so as to drive the nitrogen atoms into the silicon lattice, and specifically, to critical regions of that silicon lattice. High pressure affords proper indoctrination of nitrogen at dopant diffusion and carrier injection avenues while avoiding elevating temperatures normally associated with conventional anneal cycles. Accordingly, FIG. 3 illustrates dual processing steps of implantation 24 and anneal 28, into which nitrogenation occurs concurrent with either one of those steps. Anneal is illustrated by thermal heat waves 28. It is understood that anneal occurs after photoresist 22 is removed. Anneal can occur concurrent with implant if implant is a blanket implant, without photoresist 22. In this instance, implant defines a single LDD implant type—i.e., not a CMOS sequence involving patterned photoresist. Thus, the present implantation 24, anneal 28 and nitrogenation can occur simultaneous with one another in a single, modified implant/anneal chamber if photoresist is not involved.
FIGS. 4a and 4 b provide detailed illustration of the relative location of nitrogen and the beneficial effect of nitrogen in those locations. More specifically, FIG. 4a illustrates a plurality of nitrogen atoms 30 existing at relatively high concentrations near the surface of LDD area 26, gate dielectric 20 a and a portion of channel 32 immediately proximate to LDD 26 and gate dielectric 20 a. The nitrogen atoms 30 acquire a bond position resulting from the LDD implant, but also occupy bond opportunities near the juncture between the LDD implant area 26 and channel 32. Those opportunities are postulated to occur primarily as dangling bonds which also exist at the juncture between channel 32 and gate dielectric 20 a. The fulfilled bond areas allow nitrogen to occupy potential migration, diffusion, or injection avenues.
FIG. 4a illustrates nitrogen atoms occupying migration avenues normally resulting from thermal energy imparted to substrate 12. That thermal energy arises from an anneal cycle which would normally cause LDD implanted species 34 to migrate from LDD area 26 into channel 32. However, the presence of nitrogen serves as a barrier, to block the avenue of migration. Likewise, nitrogen atoms 30 block migration of a pre-existing channel implant species 36 from migrating from the periphery of channel 32 into LDD area 26. Resulting from nitrogen's affinity toward bonding at the migration avenues (i.e., at the juncture between LDD area 26 and channel 32) nitrogen serves to maintain demarcation between those areas. Nitrogen must be incorporated at relatively high pressures so as to ensure its placement in the critical areas. However, indoctrination of nitrogen helps occupy as well as rearrange lattice disruption so that a lower temperature anneal can be used to achieve the same effect as a higher temperature anneal. It is believed that high pressure indoctrination of nitrogen (e.g., at a pressure exceeding one atmosphere and preferably 3.0 atmospheres) allows anneal to occur less than 800� C. with the same effect as if it were to occur greater than approximately 900� C. without high pressure nitrogenation.
FIG. 4b illustrates an additional advantage of nitrogenation. Specifically, nitrogen serves to prevent charged, hot carriers 40 from being injected from the drain-side of LDD area 26 into trap sites within gate dielectric 20 a. It is believed, therefore, that nitrogen atoms 30 occupy the injection avenues and possibly assimilate the charge being injected prior to it being trapped within gate oxide 20 a. Accordingly, FIG. 4b illustrates the benefit of reducing HCE. This benefit is prevalent whenever the ensuing transistor is operating. Thus, it is believed nitrogen enhances the long-term reliability of an integrated circuit formed by the present process.
FIG. 4b indicates a distance D by which LDD area 26 encroaches into channel 32 post high pressure anneal. The presence of nitrogen atoms 30 during anneal helps ensure that distance D is less than 0.05 microns. Accordingly, the demarcation line at the channel/LDD juncture does not significantly move when subjected to a nitrogen pressurized heat cycle. This is partially due to the lower temperature anneal afforded by the present process, and partially due to the presence of nitrogen at the migratory (diffusion) channels.
FIG. 5 illustrates a subsequent processing step to that shown in FIG. 3. It is apparent that the processing sequence can be continued for numerous processing steps needed to achieve a CMOS integrated circuit. As such, FIG. 5 illustrates a masking layer patterned opposite that of masking layer 22 (shown in FIG. 3). Masking layer 42 covers or masks the previously implanted active area associated with gate conductor 18 a. FIG. 5 depicts processing steps which occur after a graded junction of LDD area 26 and source/drain area 44 are formed in the first active area 16 a. Using the self-aligned process, source/drain regions 44 align with a sidewall spacer 46 patterned on opposing sidewall surfaces of gate conductor 18 a. The combination of LDD area 26 and source/drain area 44 prove useful in minimizing HCE. Covering gate conductor 18 a as well as the graded junction comprising region 26 and 44 by masking layer 42 allows the process sequence shown in FIG. 3 to be repeated in FIG. 5 but in an altogether different active area. Specifically, FIG. 5 illustrates LDD implant 48 concurrent with or prior to an anneal cycle 50. Along with implant 48 or anneal 50 is the incorporation of nitrogen, similar to the process sequence shown in FIG. 3. Accordingly, FIG. 5 is provided to show reference to an LDD implant 48 of a different implant type than LDD implant 24. Resulting from LDD implant 48 is an LDD area 52.
A difference in implant species from that shown in FIGS. 3 and 5 produces a CMOS integrated circuit, if desired. Alternatively, the implant species can be the same or, more specifically, the processing steps of FIG. 5 eliminated to produce a single type NMOS or PMOS integrated circuit.
FIG. 6 depicts an ion implant chamber 49 retrofitted to accept a pressurized ambient containing barrier atoms. Nitrogen is preferably forwarded through an input port 53 so that nitrogen gas exists at the position in which a semiconductor wafer 54 resides. Wafer 54 is one which bears a semiconductor topography across which an ion beam 56 is scanned. Ion beam 56 is scanned by activating X and Y axes scanner 58. Scanner 58 scans a focused ion beam emitted from a focusing lens 60. Focusing lens 60 receives ions accelerated through an acceleration tube 62. The acceleration tube receives ions of a particular species filtered from other ions as a result of an analyzing magnet 64. Accordingly, analyzing magnet 64 receives ions of possibly numerous species emitted from ion source 66, but which forwards only ions of a desired atomic weight, such as ions used for LDD implant. Those ions are suitably n-type phosphorous or arsenic atoms, or p-type boron or boron difluoride ions.
Ion implant chamber 49 differs from conventional ion implantation devices in at least two important aspects. First, chamber 49 can be retrofitted to accept a pressurized ambient. The ambient is pressurized above one atmosphere, and is preferably pressurized above 3.0 atmospheres. Secondly, the pressurized ambient is specifically chosen as a herein defined barrier-entrained ambient such as nitrogen. Contrary to conventional ion sources which occur either in a vacuum without any ambient present, or occur with non-pressurized argon, the present implantation device achieves the benefits of pressurization and nitrogenation to which conventional devices do not achieve. Incorporation of nitrogen, as opposed to numerous other inert species, proves beneficial in that nitrogen has an affinity for bonding at critical regions when pressurized. The pressure level is monitored and maintained via a valve 70 arranged on outlet port 72.
It is appreciated that the present methodology can be carried forth within a retrofitted furnace, anneal chamber, or possibly a retrofitted ion implant chamber. The retrofitted annealing device is one having an inlet port for receiving nitrogen and a valve at the outlet port for maintaining pressure within the anneal chamber. As such, the present anneal chamber maintains a nitrogen pressure above one atmosphere during the anneal cycle. It is important that pressurized nitrogen be used as opposed to other inert species. It is postulated that the lower atomic weight of nitrogen affords indoctrination into the critical areas more so than non-pressurized germanium, for example.
FIG. 7 depicts a processing sequence 80. Sequence 80 begins by forming a series of gate conductors and underlying gate dielectrics 82. Thereafter, a first set of gate conductors are exposed, allowing active regions adjacent thereto to receive an LDD implant 84. Implant occurs either within a pressurized chamber in the presence of nitrogen 86, or occurs in normal fashion followed by a pressurized anneal in the presence of nitrogen 88. In either instance, nitrogen is applied in a pressurized implant, diffusion or anneal chamber. In either instance, nitrogen is applied in a pressurized state so as to allow a lower temperature anneal (i.e., an anneal less than 800� C.).
Subsequent to forming the LDD implant area, the first set of gate conductors remains exposed to allow implant of a source/drain area within the junctions of the first gate conductors, as shown by reference numeral 90. The combination of LDD and source/drain implants complete the graded junction of the first set of gate conductors. If the entire integrated circuit comprises only a first set of gate conductors, then the process sequence can be terminated at this stage, merely followed with overlying interlevel dielectric, contact formation, metalization, etc. However, if a CMOS structure is to be formed, then the process sequence must continue by exposing a second set of gate conductors and active regions adjacent thereto, as shown by reference numeral 92. Similar to steps 86 and 88, the second set of gate conductors, and specifically, the implant regions adjacent the second set of gate conductors receive LDD implants. Concurrent with or subsequent to those implants is an anneal cycle performed at reduced temperature. The process steps used to implant and anneal the LDD areas are shown as reference numerals 92 through 96. Subsequent to the step shown by reference numeral 92, a source/drain implant can occur in the junctions spaced from the second set of gate conductors to complete the CMOS implant sequence.
It will be appreciated to those skilled in the art having the benefit of this disclosure that the invention is believed to be capable of forming MOS transistors which are less susceptible to dopant migration and HCE problems. It is to be understood that the form of the invention shown and described is to be taken as exemplary, presently preferred embodiments. Various modifications and changes may be made to each and every processing step without departing from the spirit and the scope of the invention, given the benefit of this disclosure as set forth in the claims. It is intended that the following claims be interpreted to embrace all such modifications and changes and, accordingly, the specification and drawings are to be regarded in an illustrative rather than a restrictive sense.
|Cited Patent
|Filing date
|Publication date
|Aug 28, 1985
|Feb 17, 1987
|Kabushiki Kaisha Toshiba
|Method of making MOS device by sequentially depositing an oxidizable layer and a masking second layer over gated device regions
|May 16, 1986
|Apr 19, 1988
|American Telephone And Telegraph Company, At&T Bell Laboratories
|Method of making indium phosphide devices
|Apr 9, 1987
|Jul 5, 1988
|Motorola Inc.
|Means for stabilizing polycrystalline semiconductor layers
|Jun 17, 1986
|Sep 27, 1988
|Advanced Micro Devices, Inc.
|Method of improving silicon dioxide
|Sep 4, 1990
|Nov 12, 1991
|Industrial Technology Research Institute
|Method of fabricating an improved polycrystalline silicon thin film transistor
|Dec 9, 1991
|Feb 8, 1994
|Motorola, Inc.
|Thermal annealing of semiconductor devices
|Jan 14, 1994
|May 30, 1995
|Texas Instruments Incorporated
|Junction contact process and structure for semiconductor technologies
|Sep 22, 1994
|May 7, 1996
|Mitsubishi Denki Kabushiki Kaisha
|Semiconductor device having MOS transistor
|Jun 7, 1995
|Sep 10, 1996
|Mitsubishi Denki Kabushiki Kaisha
|Semiconductor device having MOS transistor with nitrogen doping
|Mar 15, 1994
|Dec 3, 1996
|Semiconductor Energy Laboratory Co., Ltd.
|Method of patterning aluminum containing group IIIb Element
|Jun 6, 1995
|Oct 7, 1997
|Advanced Micro Devices, Inc.
|Method of forming high pressure silicon oxynitride gate dielectrics
|Nov 26, 1997
|Oct 20, 1998
|Advanced Micro Devices, Inc.
|Control of juction depth and channel length using generated interstitial gradients to oppose dopant diffusion
|Mar 21, 1997
|Jan 19, 1999
|Advanced Micro Devices, Inc.
|Semiconductor fabrication employing a post-implant anneal within a low temperature high pressure nitrogen ambient to improve channel and gate oxide reliability
|Citing Patent
|Filing date
|Publication date
|Apr 4, 2001
|Apr 23, 2002
|Advanced Micro Devices, Inc.
|Fabrication of gate of P-channel field effect transistor with added implantation before patterning of the gate
|Aug 21, 2007
|Feb 26, 2009
|Texas Instruments Incorporated
|Method of forming a semiconductor device with source/drain nitrogen implant, and related device
|U.S. Classification
|International Classification
|Cooperative Classification
|European Classification
|Feb 23, 2005
|Fee payment
Year of fee payment: 4
|Sep 30, 2008
|Fee payment
Year of fee payment: 8
|Aug 18, 2009
Owner name: GLOBALFOUNDRIES INC., CAYMAN ISLANDS
Free format text: AFFIRMATION OF PATENT ASSIGNMENT;ASSIGNOR:ADVANCED MICRO DEVICES, INC.;REEL/FRAME:023119/0083
Effective date: 20090630
|Feb 13, 2013
|Fee payment
Year of fee payment: 12


text:
HTC has started the roll out the new Android 4.0.4 ICS with Sense 4.1 for Europe.
The new upgrade brings the much needed performance and stability improvements to the Samsung Galaxy SII.
The Android 4.0.4 update has been rolled out for Samsung Nexus S, Xoom WiFi and HSPA+ Galaxy Nexus devices.


text:
"Seoul - Namdaemun" Top 5 Page for this destination South Korea Things to Do Tip by ant1606
South Korea Things to Do: 366 reviews and 527 photos
Namdaemun, literally "south big gate" is one of the original ancient city gates. The area around this impressive landmark has recently been renovated and it's now easier to get near it for a walk regardless of the abundant vehicle traffic.
Nearby Namdaemun market is Korean National Reasure # 1, a spot where trading is being carried out for over a thousand years. Trading here is organized in shifts and it's a busy place around the clock, as well as motor traffic around it.
Update Feb 11, 2008
Today an arson caused the destruction of Namdaemun, its 600-years old wooden roof collapsed. Officials say it will take some three years to complete an estimated 20+ million dollar rebuild.
More Things to Do in South Korea (26)
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Restaurants (12)See All Nak-ji (Small Octopus)
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Local Customs (13)See All Korea - Construction
Off The Beaten Path (12)See All Seoraksan National Park
Shopping (2)See All Seoul - Itaewon
Warnings and Dangers (2)See All Seoul - Air Pollution
Hotels (3)See All Daegu - Hotel 3f10
What to Pack (1)Korea Weather
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text:
Super 8 Forney TX, Forney
- Free continental breakfast, free WiFi, and free parking
Main amenities
- 30 guestrooms
- Outdoor pool
- Business center
- 24-hour front desk
- Coffee/tea in a common area
- Air conditioning
- Daily housekeeping
- Meeting rooms
What's around
- Buffalo Creek Golf Club (10.1 mi / 16.3 km)
- Southwestern Christian College (11.2 mi / 18.1 km)
- The Harbor Rockwall Mall (11.4 mi / 18.4 km)
- Terrell Heritage Museum (11.6 mi / 18.7 km)
- Town East Mall (11.6 mi / 18.7 km)
For families
- Cribs/infant beds available
- Rollaway/extra beds available
- Connecting/adjoining rooms available
- Premium TV channels
- Television
- Free toiletries
It was overall average. I thought the price was a little high considered the condition…
The hotel served its purpose... hot shower and a bed to sleep in for the night. It was a…
Super 8 Forney TX, Forney
Hotel Info: 020 3027 9803from £51
- Suite, 1 King Bed
- Standard Room, 2 Queen Beds, Smoking
- Suite, 1 King Bed, Smoking
- Standard Room, 2 Queen Beds
- Room, 1 King Bed, Microwave
- Standard Room, 1 King Bed
- Room, Accessible
- Room, Accessible
- Suite, 1 King Bed
Also popular with travellers from the UK
At a glance
Key facts
Hotel size
- This hotel has 30 rooms
- This hotel is arranged over 2 floors
- Check-in time starts at 3 PM
- Check-out time is 11 AM
Required at check in
- Credit card or cash deposit required
- Government-issued photo ID required
Travelling with others
- Pets allowed
Extra people
- Rollaway beds available, charges may apply*
- Free WiFi in public areas
- Free WiFi in rooms
- Free self parking
Nearby Two Star Forney hotels
In the hotel
- Free continental breakfast daily
- Coffee/tea in a common area
- Outdoor seasonal pool
- Outdoor pool
- Business center
- Meeting rooms
- One meeting room
- 24-hour front desk
- Accessible bathroom
- In-room accessibility
In the room
- In-room climate control (air conditioning)
- Air conditioning
- Iron/ironing board
- Shower/tub combination
- Free toiletries
- Premium TV channels
- Desk
- Free WiFi
- Free local calls
- Refrigerator (on request)
- Microwave (on request)
- Daily housekeeping
- Connecting/adjoining rooms available
- Access via exterior corridors
Top Forney hotels
Recently reviewed hotels in Forney
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Nearby hotels
Super 8 Forney TX, Forney's small print
Also known as
- Super 8 Forney TX Motel
- Super 8 Forney TX
- Super 8 Forney TX Motel
The property has connecting/adjoining rooms, which are subject to availability and can be requested by contacting the property using the number on the booking confirmation.
Optional extras
Rollaway beds are available for USD 10 per night
We have included all charges provided to us by this hotel. However, charges can vary, for example, based on length of stay or the room you book.
Is the description of this hotel not correct? Tell us


text:
Video Industry News Video Company News Technology Industry News Technology Company News Novelty Industry News Novelty Company News Gay Industry News Gay Company News Legal Industry News All Company News
Released: Mar 01st, 1993
Running Time: 55
Director: Janus Rainer
Company: Star Maker Video
Cast: Bill Fenway, Mistress Lauren
Critical Rating: Not Yet Rated
Genre: Specialty
Mistress Lauren gives a whole new meaning to the phrase, "let's play dress up", as she transforms Virgil (Bill Fenway) to Virginia. Aida Gray's makeovers aren't as complete as Virgil's, because in addition to the stockings, garters, corset, wig and make-up, Virgil gets a lesson in "behavior modification" courtesy of Mistress Lauren. He loves every minute of it (as evidenced by his extreme state of arousal), and despite some shaky camera work in spots, so will you.


text:
Parsons High School Parsons, KS Alumni
Parsons Parsons, KS Alumni Photos
Unknown Grad Year
Unknown Grad Year
Unknown Grad Year
What is this site?
- Send messages to alumni
- View PHS Alumni Profiles
- Share your memories
- Share photos with others
- Discuss past activities
Click on the Yearbooks below to view a copy Online at Classmates.com®. If you don't see your class's yearbook, check out our yearbook page.
Famous Alumni
There are currently no Parsons Parsons, KS notable alumni listed. Be the first to add an PHS famous alumni.
Create a Parsons High School Parsons, KS memorial for an individual alum that has passed away.
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- Class of 1980 Brenda Condo
- Taylor Jayne
- Class of 2006 Tyler Willhite
- Class of 1983 Angela Shaw
- Class of 1992 William Gray
- Class of 1984 Brian Ginn
- Class of 2016 Lachelle Hinman
- Class of 1970 Charles Belveal
- Class of 1977 Debbie Wright
- Class of 1973 Elizabeth Wilson
- Class of 1971 Thomas Shields
- Will Waters
- Class of 1986 William Waters
- Class of 1933 Nancy Boyse
- Class of 1996 Heather James
- Charles Nally
- Class of 1943 John Conroy
- Class of 1999 Charale Wells
- Class of 1942 Virginia Kyle
- Class of 1996 Bryan Mordica
July Birthdays
|No Birthday's this month
Parsons Parsons, KS Alumni Merchandise
Alumni from Parsons HS can use this site to get in touch with old friends from their high school in KS. You can share memories of those activities that you were involved with at Parsons HS and you can view other alumni and read what other former students have posted about the time they spent at Parsons. Parsons High School alumni can relive their experiences from high school by sharing memories and pictures, reconnecting with those alumni listed, and more.


text:
Paris Travel Guide by Triposo
- June 2, 2016
Offers in-app purchases
( 177)
Paris, the city of lights, with all of its sights, museums, parks and restaurants in one handy guide for your phone.
* A detailed sights section with all the monuments of Paris
Features of the Paris Travel Guide by Triposo:
* A detailed sights section with all the monuments of Paris
* Eating out section with Paris' best restaurants.
* Discover the nightlife of Paris! Bars, pubs & disco's
* Book hotels in Paris directly from the app
* Mini guides for day trip destinations close to Paris
* An offline map of Paris
* Complete background information of Paris
Love this app and all Triposo This app is brilliant. It is like a mini guide book. The map could be better but the information is in a well formatted and digestible form. There is so much detail and is by far the best I have tried!
Fine job. If only map was better.
Life saver app Our go to app for almost all cities that we visited. Very informative and helpful. Offline maps help you locate the nearest landmarks, and what you might be just walking by! Saves so much of our time and money!
Temperature wrong Wrong temperatures display. Mar/Apr temperature where got 39degC one?!?!
Wonderful resource
Very helpful It's an encyclopedia just like Wikipedia and it work's offline. It would be even better if it had suggested routes.
What's New
- Smaller map markers so the map can be seen better.
- Facebook ratings.
- Fresh data.
If you like Triposo, please take the time to give us a nice review: it really helps.


text:
New Smoking Laws Stirring a Storm
By MARCELLE S. FISCHLER
Published: July 12, 1998
AS she had on so many other evenings after work, Jean Shapiro sat on a barstool at Pancho's Border Grill in Great Neck last week, drinking and schmoozing with a client and a friend. When she reached for her leather cigarette case, however, the bartender told her she would have to step outside. Although a canister of matches was still on the counter, smoking was no longer allowed.
''I've been coming here for years,'' said Ms. Shapiro, a market research executive, lighting a cigarette as soon as she stepped onto the sidewalk. ''I knew the law changed but I thought maybe they could put up a wall and work it out. I'm a smoker but I can understand. I'm trying to quit but I can't. I would respect other people's wishes, but where are you going to go?''
Since July 1, when new anti-smoking laws took effect in Nassau and Suffolk counties, smokers have found themselves either on the sidewalk or virtually in the closet.
Under the new law, lighting up was banned in health care centers, many businesses and outdoor public areas. Restaurants in Nassau County with more than 50 seats must prohibit smoking altogether or build smoking rooms or bar areas outfitted with floor-to-ceiling doors and a filter and ventilation system exhausted to the outside and pressurized so the smoke cannot escape when the door is open. Under the old law, restaurants in Nassau were required to reserve a minimum of 75 percent of their seats in a nonsmoking area, but there was no requirement that the smoking area be physically segregated.
In Suffolk, a flat ban on smoking in restaurants took effect three years ago. The big change is that a clause exempting restaurant bar areas expired on June 30.
Bars or taverns, defined as places where less than 40 percent of sales come from food, are exempt in both counties. In Nassau, smoking is also permitted in restaurant bars that are more than six feet away from dining areas. In Nassau restaurants with fewer than 50 seats, the old 75 percent rule applies, provided a filter system is installed.
In Suffolk, the rules apply regardless of size. Five hundred establishments are affected by the change in Suffolk, according to Ernst Dinda, chief of the county's Environmental Protection Bureau; at least 10 times that number are affected in Nassau.
The latest restrictions have restaurateurs fuming and politicians feuding. In Nassau County, Democratic legislators who pushed to ban smoking altogether doubt whether the Republican-led county government will enforce the more complicated but less strict regulations. In Suffolk County, eight restaurateurs filed suit, arguing that the law holds restaurant owners to a higher standard than bar owners.
''This is an equality issue,'' said Ken Novikoff, a lawyer representing the restaurants in the Suffolk case. ''I don't know under what guise you can distinguish bars from bar areas in restaurants. If you're going to allow smoking in bars, you've got to allow it in restaurants.''
In both counties, enforcement of the laws is the primary responsibility of the Health Department.
''Our inspectors have been enforcing those ordinances on their regular inspections of food service establishments,'' said Cynthia Brown, spokeswoman for the Nassau County Department of Health. Her department, with the equivalent of 13 full-time inspectors, is responsible for monitoring Nassau County's 5,000 to 6,000 food service locations. ''We're going to be reallocating, if necessary, our current resources to enforce the law if it needs to come to that.''
''Those with a clean record are only inspected every year or so,'' Ms. Brown said. ''If they don't have a good record, it might be much more often.''
But the health inspectors do not have reputations as tigers on smoking-law violations. Ms. Brown acknowledged that ''in the last few years we have not issued any notices of violation'' of the old, weaker law.
Some Nassau restaurateurs, betting that the new rules will not be strictly enforced, were planning to test that spotless record.
At the Barefoot Peddler, a bar and grill in Greenvale, three smoke ventilators were installed in the past six months. But the new law says that's not enough.
''According to the law, I have to enclose this section,'' said Robert Dickerson, the manager, who was seating customers in the smoking section. He admitted that he was risking a $250-a-day fine.
''I might as well knock the place down,'' Mr. Dickerson said. ''Suppose I told those people they can't smoke here. They're going to go right down the road where they can. The government's gotten a little bit out of hand on this one.''
A week after the new law took effect, 167 restaurants in Nassau County had applied for a waiver that would give them until the end of the year for making modifications or going smoke-free.
For Lisanne Altmann, a Democratic Nassau County legislator from Great Neck, that number indicated a problem.
''There hasn't been a great deal of effort made to notify the restaurants,'' she said. ''At the diner I went to the other day, people were still smoking. The business owners have realized the county doesn't have the personnel to enforce the law.''
Additionally, Ms. Altmann said, restaurants are claiming that building a smoking room could run as much as $30,000 to $40,000 if the floor plan had to be reconfigured.
''Every study shows that going smoke-free is not going to hurt their business,'' she said. ''If anything, they may pick up some business by going smoke-free.''


text:
Top Definition
The act of shartting (fart with a little shit rose bud) into a jar. This is a combination of shartting and jartting.
Bryan, did you shjart in my mason jar with peaches in it? WTF?
de T Cronez 29 Decembrie 2010
Trending Now
E-mailurile sunt trimise de la firstname.lastname@example.com. Nu-ți vom trimite mesaje nedorite.×


text: AdChoices Terms of Use Privacy Policy Hide TOP 10 Top 10 Cars Top 10: Best To Worst GM Models Share Tweet 0 Shares 6. Oldsmobile Aurora (first-gen) Public Domain Remember the tagline: "This is not your father's Oldsmobile"? It came about because of the Olds Aurora. The first-generation cars of 1995-'99 were poised to resurrect the division and make import buyers think twice. For a while, and to an extent, Aurora did both. It was luxurious, stylish, had ample power, and reasonable handling. It was also pricey, so initially strong sales weren't sustained. Olds was in a cash crunch during its final years, so the visually unique Aurora was more obviously badge-engineered in its second and final 2001-'03 generation. Next Page TOP 10 9 8 7 6 5 4 3 2 1 Comments Share your opinion Your name More Like This Top 10 Cars 2003 Hummer H2 Read More Top 10 Cars Top 10: Cars GM Should Have Produced Read More Top 10 Cars Top 10: Summer Rides Read More Top 10 Cars Top 10: Camping Rides Read More Top 10 Cars Top 5: Reasons Not To Save The American Auto Industry Read More Top 10 Cars Top 10: Cars To Can Read More Around the Web Special Features Special Feature The Ultimate Guide To Hooking Up Online Read More Guy Gear The Best Watches Under $500 Read More


text:
Patient Protection and Affordable Care Act:
HHS's Process for Awarding and Overseeing Exchange and Rate Review Grants to States
GAO-13-543: Published: May 31, 2013. Publicly Released: Jul 1, 2013.
Additional Materials:
- Highlights Page:
- Full Report:
- Accessible Text:
(202) 512-7114
Office of Public Affairs
(202) 512-4800
What GAO Found
The Department of Health and Human Services (HHS) has a structured process for awarding Patient Protection and Affordable Care Act (PPACA) exchange and rate review grants to states. These grants are designed to help states establish exchanges--new health insurance marketplaces through which individuals and small businesses can obtain insurance--and review issuers' proposed rate increases. The grant award process consists of a series of steps during which the agency solicits, screens, and evaluates grant applications, and then makes funding awards. Once HHS deems that applications meet program eligibility criteria, applications go through various reviews, including a review by independent experts and HHS officials. On the basis of these reviews, HHS determines whether states' proposed activities are allowable, and if so, whether the associated requests for grant funding are reasonable. Based on recommendations from the reviews, HHS determines whether to award grants to states, and if so, the amounts of any grants to be awarded.
As of March 27, 2013, HHS had awarded about $3.8 billion in PPACA exchange and rate review grants that states have used or plan to use to develop exchanges and enhance rate review capabilities. This includes nearly $3.7 billion in exchange grants awarded to 49 states and the District of Columbia. Among states that have received exchange grants, the amount of funding provided to states ranges from $0.8 million (Wyoming) to about $911 million (California). Approximately half the states were awarded under $30 million in exchange grant funding, while 10 states were awarded over $100 million. As of February 2013, states had drawn down approximately $380 million of their exchange grant funds. GAO's review of a subset of exchange grantee financial reports indicated that nearly 80 percent of expenditures have been for contracts and consulting services, much of which states spent on key activities for developing exchange information technology systems. HHS also awarded about $159 million in rate review grants to 46 states and the District of Columbia, much of which has funded five key activities, including expanding the scope of rate review programs and enhancing the transparency of the rate review process.
HHS's process for overseeing states' use of PPACA grant funds consists of several mechanisms. The agency regularly monitors states' grant activities though its review of program and financial information reported by states, as well as ongoing communication with grantees. HHS's process also includes mechanisms to periodically verify state-reported information, including its analysis of states' withdrawal of grant funds and site visits. To date, however, use of site visits has been limited. HHS has a number of mechanisms it can utilize, such as restricting a grantee's access to funds, if its monitoring identifies concerns or compliance issues, but agency officials indicated they have not identified any misuse of grant funds or compliance issues to date.
Why GAO Did This Study
PPACA required the establishment of health insurance exchanges and a process for the annual review of unreasonable increases in insurance premiums charged by issuers of health coverage in each state. To assist states in establishing exchanges and in enhancing their ability to review issuers premium rate increases, the law established new grant programs under which HHS is authorized to award grants to states through 2014. The law appropriated an unspecified amount of funds for exchange grants, and appropriated $250 million to HHS for rate review grants. GAO was asked to provide information on HHSs processes to award and oversee these grants. In this report, GAO describes (1) the process HHS uses to award exchange and rate review grants to states; (2) the amounts of grants and key activities states funded through the grants; and (3) HHSs process for overseeing states use of the grants.
GAO reviewed laws, regulations, and HHSs procedures that established the processes for awarding the grants. GAO obtained and analyzed data on all exchange and rate review grants awarded from August 2010 through March 2013. GAO also reviewed HHSs procedures for overseeing the grants, and interviewed officials responsible for grants oversight. HHS provided technical comments on a draft of this report, which GAO incorporated as appropriate.
For more information, contact John E. Dicken at (202) 512-7114 or firstname.lastname@example.com.
Jul 7, 2016
Drug Shortages:Certain Factors Are Strongly Associated with This Persistent Public Health ChallengeGAO-16-595: Published: Jul 7, 2016. Publicly Released: Jul 7, 2016.
Jun 23, 2016
Defense Health Care:Availability and Quality Measurement of Women's Health Care Services in U.S. Military HospitalsGAO-16-596: Published: Jun 23, 2016. Publicly Released: Jun 23, 2016.
Jun 20, 2016
Federal Autism Activities:Agencies Are Encouraging Early Identification and Providing Services, and Recent Actions Could Improve CoordinationGAO-16-446: Published: May 20, 2016. Publicly Released: Jun 20, 2016.
Jun 15, 2016
Food and Drug Administration:Comprehensive Strategic Planning Needed to Enhance Coordination between Medical Product CentersGAO-16-500: Published: May 16, 2016. Publicly Released: Jun 15, 2016.
Medical Product Oversight:FDA Needs More Strategic Planning to Guide Its Scientific InitiativesGAO-16-432: Published: May 16, 2016. Publicly Released: Jun 15, 2016.
Jun 9, 2016
Medicare Fee-For-Service:Opportunities Remain to Improve Appeals ProcessGAO-16-366: Published: May 10, 2016. Publicly Released: Jun 9, 2016.
Jun 7, 2016
VA Health Care:Improvements Needed for Management and Oversight of Sole-Source Affiliate Contract DevelopmentGAO-16-721T: Published: Jun 7, 2016. Publicly Released: Jun 7, 2016.
Jun 3, 2016
VA's Health Care Budget:In Response to a Projected Funding Gap in Fiscal Year 2015, VA Has Made Efforts to Better Manage Future BudgetsGAO-16-584: Published: Jun 3, 2016. Publicly Released: Jun 3, 2016.
Jun 1, 2016
Medicare:Utilization and Expenditures for Complex Wheelchair AccessoriesGAO-16-640R: Published: Jun 1, 2016. Publicly Released: Jun 1, 2016.
May 24, 2016
Medicare Program:Continued Action Required to Address Weaknesses in Provider and Supplier Enrollment ControlsGAO-16-703T: Published: May 24, 2016. Publicly Released: May 24, 2016.
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text:
JUNE 2016 News
Spring has finally sprung upon us at the Upper Village BIA. Our street has been filled with flowers with vibrant colours.
We also notice more pedestrian traffic on the street enjoying the shops, restaurants and other various stores.
Within a few weeks we will be replacing some of our old benches with new ones.
We hope this will make Upper Village more inviting to visit and enjoy. Cedarvale and Forest Hill station are being built in our BIA as the Metrolinx Crosstown project moves forward.
We are expecting minimal disruptions during the station construction. New businesses have opened on the street this last month and we wish them success in our BIA.
We hope to see everyone on the street enjoying themselves and possibly even get a chance to meet you!
Upper Village BIA Facebook


text:
Learn About Density with Dancing Raisins
Kick up the curiosity with this hands-on kitchen chemistry experiment that teaches kids about density.
Kick up the curiosity with this hands-on kitchen chemistry experiment that teaches kids about density.
Matching up blocks to their shape and color is a fantastic activity for older toddlers. Add pattern play to change it up and add difficulty for preschoolers.
Read about the history of voting, presidential trivia, or a duck who thinks he should be in charge, in this list of recommended books for kids ages 0-9.
I think we can all agree that great books are great and that a great board game is nearly as great as a great book. This crafty (and pretty great) activity will have you and your kids turning a favorite book into a brand new board game with a whole lot of artistic family fun. […]
This printable game will help kids practice their math in the real world and, fingers crossed, keep them entertained while you shop!
"I Spy" never gets old! And using it adds counting (and even addition) to a simple cereal sensory bin for preschooler to practice counting.
My oldest daughter is a member of her school's logic games and puzzles club this year in 6th grade and has recently introduced her little sister and my wife and I to the linguistic world of hinky pinks (also called hink pink and hinky pinkies, depending on the # of syllables used). Not only fun […]
Poetry is a wonderful way to get kids thinking about words in a not-so-literal sense. Encourage your child's poetic side with this silly found poetry game.
Tracing for preschoolers is a great way to build their confidence as they learn to write. Combine sensory with tracing has a hands on way to learn to write.


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Sesame Street Season 46
Sesame Street's 46th season officially began Saturday January 16 on HBO. After you see the new episodes, post here and let us know your thoughts.
Ok, the fixed version of Warldorf's "BRING FIGGIE BACK!!!"
Discussion in 'Friends and Family' started by miss kermie, Mar 12, 2012.


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Prison Ministries
Oakland City University implemented the prison ministry program to eight correctional facilities in the Southern Region of Indiana in August 2012.
During the most recent Indiana State evaluations, Oakland City University's correctional education programs received a grade report of an A+ for the 2012-13 school year. Adult education instructors also received evaluation reports based on the public school RISE model. Sixteen academic and ten vocational teachers exceeded expectations for the 2012-13 school year.
Latest News
Building Trades at RCF
Jun 14, 2016 at 8:56 AM
The Rockville Correctional Facility (RCF) offers many re-entry programs designed to reduce recidivism and aid in the offender's reintegration to the community. These programs range from cognitive self-change to therapeutic communities, faith and character-based initiatives and educational opportunities.
Once such example of the latter is Building Trades, a vocational program offered to RCF offenders through Oakland City University's (OCU) partnership with the Indiana Department of Correction. Building Trades or Building Maintenance is a 350 hour program designed to prepare the offender for transition into a post-secondary or apprenticeship program while providing industry recognized credentials.
Participants of this vocational endeavor will receive 10 hours of OSHA training and certification as well as training in over 40 areas of construction and maintenance including basic plumbing, electrical and construction. Upon completion, the offenders are eligible for a 90 day reduction in sentence; however, if you ask the current participants, you might find the dividend is worth much more than the investment of time.
OCU Building Trades instructor Don Kuk explains that the offenders not only learn the skills they need to obtain gainful employment, but they come away with a sense of pride, accomplishment and self-confidence they didn't have before. "They're very proud of the work they do, especially when they receive special requests from other facilities."
Recently, the Building Trades participants at RCF completed multiple construction projects including a bookcase for the RCF Culinary Arts department, a shoe shine chair donated to another facility, computer tables used at yet another IDOC facility, and furniture made from recycled skids for another re-entry program at RCF. Their current project is a gazebo for outside the RCF recreation building. Most of these projects were completed within 1-2 weeks. Some, like the furniture and the gazebo required months of time.
RCF Celebrates 2016 Education Graduates
Jan 29, 2016 at 9:17 AM
Rockville, Indiana - (January 27, 2016) – The Rockville Correctional Facility (RCF) held a graduation for its Education and Indiana Department of Labor (IDOL) programs. The 76 graduates and their visitors and families were welcomed to the ceremony by Kara Burgess, the Education Program Director.
Ms. Burgess also introduced guest speaker Tammy L. Cooper, BS, MSM Executive Director &Founder of G.G.I.T. (Girl Get It Together), Educator, Empowerment Speaker and Life Coach. Ms. Cooper spoke about the power of positive thinking and changing for the better by taking care of yourself and making a conscious effort to be the change.
The certificates were presented to each of the TASC (Test of Adult Secondary Completion), Building Trades, Business Technology, Culinary Arts, ADOPT (Animals Depending On Prison Time) and PEN (Prison Enterprises Network) programs, the latter two being IDOL programs.
The graduates completed the "Turning of the Tassels" and were congratulated on their hard work by Superintendent Julie Stout who also thanked those in attendance for their support and presence at the ceremony.
Guests and graduates were invited to enjoy a meal prepared by the RCF Culinary Arts participants which included savory sandwiches, handmade potato chips, veggies and scrumptious carrot cake and cream cheese cupcakes.
There is no archived news at this time. Please check back soon.


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Quotation by Niels Bohr:
Niels Bohr (more by this author)
1885-1962 (Age at death: 77 approx.)
Niels Henrik David Bohr was a Danish physicist who made foundational contributions to understanding atomic structure and quantum mechanics, for which he received the Nobel Prize in Physics in 1922. Bohr mentored and collaborated with many of the top physicists of the century at his institute in Copenhagen. He was part of a team of physicists working on the Manhattan Project. Bohr married Margrethe Nørlund in 1912, and one of their sons, Aage Bohr, grew up to be an important physicist who in 1975 also received the Nobel prize. Bohr has been described as one of the most influential scientists of the 20th century.
Author Information from Wikipedia
Country: Denmark
Type: Prose
Context: Book
Context Details: A World Destroyed, p93
Source: The book Open Letter
Uttered: 1933
Cited By: Martin J. Sherwin,
|The views expressed in this article are the sole responsibility of the author and do not necessarily reflect those of this website or its editors.


text:
Digital Forensic Specialist (Audio)
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You'll contribute to a wide range of research and development activities.
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MetOp-SG Receiver Project Manager
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Project Manager to oversee the development, production and test of spaceflight components and integrated receiver systems
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Systems Engineer
- Abingdon, Oxfordshire
- Competitive + Benefits
Perform general systems engineering tasks as necessary with specific focus on electronic systems and instrumentation.
- Recruiter: Reaction Engines Ltd
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Latest News:
Topic Title: electrical installation certificate clarification
Topic Summary: Block of flats
Created On: 30 November 2012 05:29 PM
Status: Post and Reply
|Linear : Threading : Single : Branch
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30 November 2012 05:29 PM
Hi , I am currently rewiring a flat which is in an old block of around fifty flats.
I have installed a new consumer unit and the client has arranged to have the meter moved.
Edf turned up yesterday but refused to move the meter due to the second fix not being complete ( fair enough ).
The Edf chap then told me it was down to me to find out where the flat was fed from etc.
After two hours of tracing out trunking and conduit runs throughout the flats and coming up against locked doors I found the sub board which feeds the flat on the fifth floor staircase landing.
Luckily it was open and I found a 8way 3 phase Ryefield board.
Also found the service head in the basement , this was renewed in 1998.
So I have a 300amp incomer (fuse size unknown )with 120mm tails to a 200amp isolator and a 70mm earthing conductor ( Tncs ).
From here I have a 4core 120mm swa feeding my Ryefield board on the fifth floor landing with 70mm cpc.
From here I have a Bs1361 60a fuse which feeds 16mm single cables which feed the flat.
All flats are the same.
I am fine with supply characteristics and earthing arrangements but what would be the particulars of installation at the origin.
Would this be the 200amp switchfuse in the basement or the 60 amp fuse on the landing.
What would be the main switch or circuit breaker , the 200amp switch , the 60 amp fuse or the 60947-3 switch in the consumer unit.
I would not normally be so concerned , I would use the 60 amp details but building control are all over this job because the builder did not notify anyone and has taken out walls and partitions and the neighbours have complained about the noise and the parking so alerting building control about the works.
Oak flooring has had to be taken up to fit a sound barrier , fire doors have to be added etc.
Electrical and gas certificates required obviously , but I know it will be scrutinised so I want to get it spot on.
Another point regarding Ze .
How ? I cannot turn off fifty flats.
Also bonding. If the supply in is 300 amps I dont know what size the incoming neutral would equate to but I have a 120mm neutral up to the Ryefield.
This makes me wonder if the 16mm earths that go into each flat comply because surely the bonding conductors if related to the incoming neutral should be around 35mm ( assumed ) .
Advice appreciated.
30 November 2012 09:19 PM
I would take it from the first part of the installation after the supply companies meter to your individual flat. All wiring before then is their reponsibility.
Specialised Subject. The Bleedin Obvious. John Cleese
30 November 2012 09:40 PM
Not necessarily their responsibility these days Gary, but I'd agree that the OP's installation starts from the customers side of the meter in the flat.
Most DNO's will disown the risers and associated distribution equipment but in this case I don't see that is an issue.
The incoming protective device is 60 AMPS BS88, The main switch is 60947-3 and assuming it's a normal supply the incoming earth conductor at 16mm and bonding at 10mm should comply (unless I've missed something)
30 November 2012 09:59 PM
Thanks chaps.
I take it that I will also take my Ze reading at the incoming terminals at the flat ?
30 November 2012 10:07 PM
Yes, It's the origin of your supply as far as BS7671 is concerned.
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Handmade Craft Ideas from 2010: A Year of Free Crafts
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Aleene's Look of Embossing Snowflake Box
By: Tiffany Windsor
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If you like the look of vintage craft ideas and projects, try your hand at the Aleene's Look of Embossing Snowflake Box from Tiffany Windsor. This seasonal craft can be displayed until spring. Best of all, you can create the look of embossing without the expensive supplies.
Trace a snowflake image directly onto a plain box and draw over the image with glue. Once the glue is dry, spray the entire surface with spray paint. For a distressed look, squeeze acrylic paint onto a wet wipe and cover the surface. Also, run craft chalk over the surface of the box. Cover the entire surface with an acrylic sealer and allow the entire piece to dry. You can use this box to decorate your space or give one to a friend as a Christmas gift.
For a step-by-step video tutorial of this project, check out Faux Embossed Snowflake Box.
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text:
Death's Shadow
Death's Shadow Poems
Shadow Monsters
Light the flame,
keep the darkness at bay.
Beware the night,
take heed of those afraid of light.
Worse than monsters under the bed,
worse than monsters hiding in the closet.
Behind you, they silently creep,
waiting for you to sleep.
Power hungry,
they feed off fear.
Pain is what they intend to induce,
whenever they are set loose.
Bars can't stop them,
chains won't hold them.
They prey on those who still have innocence,
making use of their ignorance.
Victims are left bleeding and broken,
never to be the same again.
Every breath ...
The innocence in a secret shared,
And the halo reflected
In a young girls eyes.
For every shooting star
There's one more wish
For the innocence to remain
Untouched by the surrounding world.
The pure beauty


text:
I have a php script which is creating a list of images (usually around 400) to feed to ffmpeg via an exec command, it breaks. Is there another way to send multiple images?
Sample code below
$imgs4vid = "'dir/img1.jpg' 'dir/img2.jpg' 'dir/img3.jpg' 'dir/img4.jpg' 'dir/img5.jpg' etc.."
exec("ffmpeg -r 1/5 -pattern_type glob -i ".$imgs4vid." -c:v libx264 -r 30 -pix_fmt yuv420p ".$vid_name.".mp4 2>&1", $output);
I have a way to do with -f concat -i (generatoe a list of files and put her)
Seems like a long way to do it though, must be an easier solution?


text:
Oracle database security
Oracle security
Oracle database security News
June 27, 2016
Guide to Collaborate 16: IT lessons learned from Oracle user event
The OAUG, IOUG and Quest user groups came together in Las Vegas for Collaborate 16. This guide provides coverage of presentations and discussions about Oracle technology at the conference.
January 21, 2016
Newest Oracle Critical Patch Update contains 248 fixes
The January 2016 Critical Patch Update has 248 security fixes, a record-breaking high number. It includes fixes for Oracle Database, Java SE, E-Business Suite and more.
August 26, 2015
Oracle Mobile Cloud will integrate with Xamarin platform
Oracle Mobile Cloud Services will integrate with the Xamarin platform, which lets developers build, test and model mobile applications in C#.
August 10, 2015
Aptec names use cases for Oracle Identity Management patch
Aaron Perry, president of Aptec, presents use cases for Oracle Identity Management 11gR2 PS3 drawn from his client's experiences with the new patch.
Oracle database security Get Started
Bring yourself up to speed with our introductory content
Oracle database security guide
Keeping data and systems secure is a must for any Oracle DBA. Beyond patching known security flaws, there is a great deal a DBA can do to protect Oracle DBMSs and applications from security breaches, both from inside and outside your organization.... Continue Reading
E-book: What you need to know about database security inside and outside your company
This e-book will take a look at how database managers can evolve their security strategies to match the increasingly sophisticated technologies used by hackers to attack their mission critical data. Find out the latest information about database security to make the right decisions for your organization.
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Evaluate Oracle database security Vendors & Products
Weigh the pros and cons of technologies, products and projects you are considering.
Oracle has a new security tool for Database 12c, data redaction
Oracle Database 12c adds a new security tool, data redaction. Here are step-by-step processes for using data redaction for data masking. Continue Reading
Oracle Identity Manager adds provisioning, compliance features
Oracle's head of security and identity management development talks about the latest version of Oracle Identity Manger and Oracle's overall identity management strategy. Continue Reading
When were the SYS/SYSTEM passwords last changed?
How can I find out what date the SYS/SYSTEM passwords have been last changed on? Continue Reading
Manage Oracle database security
Learn to apply best practices and optimize your operations.
OAUG head Dues talks tech plans, Oracle cloud applications
OAUG president Patricia Dues talks about the technology that has the Oracle user group's attention and why it's important to learn about the cloud even if you aren't planning to use it. Continue Reading
Oracle Identity Management keeps test data secure
Educational Testing Services uses Oracle Identity Management to manage access and keep SAT, GRE and Advanced Placement test data safe. PricewaterhouseCoopers recommends Oracle Identity Manager to its big banking clients with complex needs. Continue Reading
Encrypting data on Oracle SecureFiles
Transparent Data Encryption is now enabled for Oracle SecureFiles. Read up on how to use it here. Continue Reading
Problem Solve Oracle database security Issues
We've gathered up expert advice and tips from professionals like you so that the answers you need are always available.
Don't rush into cloud databases without a well-grounded plan
As more companies move to the cloud, it's important for DBAs to know both the good and the bad about managing Oracle cloud database systems before they take the plunge and migrate. Continue Reading
Configure Oracle fine-grained access control for network services
Most Oracle databases don't need access to the network. So creating Oracle fine-grained access control for network services will help security. Continue Reading
MySQL security analysis: Mitigating MySQL zero-day flaws
In the wake of several recent MySQL zero-day vulnerabilities, expert Michael Cobb assesses the state of MySQL security. Is a MySQL alternative needed? Continue Reading


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Rustburg News
Local news for Rustburg, VA continually updated from thousands of sources on the web.
Man charged with animal cruelty after he strapped cow to flatbed trailer
Thursday Jun 30 | Daily Mail | Comment?
Rustburg news is powered by NewsRank™
Updated: Thu Jun 30, 2016 10:01 pm
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Exclusive Look at The Tyler Perry's Single Moms Club | Tyler Perry | Celebrities | BET
The DVD is available now.
The DVD is available now.
Bernz speaks on his new album, Tech N9ne and finding his fate in Vegas.
Wendi McClendon-Covey, Cocoa Brown and more on their new film.
We have a sneak peek of Tyler Perry's The Single Moms Club.
Perry's Single Moms Club was director's career-worst opening.
The Single Moms Club, Zoe Saldana, Terrence Howard and more.
Plus, the ladies of Single Moms Club name their celeb mom team.
Plus, Tyler Perry talks Single Moms Club and more.
The actress talks about working alongside her son on The Single Moms Club.