text:
|Publication number
|Publication type
|Application number
|Publication date
|Sep 9, 2003
|Filing date
|Oct 10, 2001
|Priority date
|Oct 11, 2000
|Fee status
|Publication number
|Ofer Sneh
|Original Assignee
|Genus, Inc.
|Export Citation
|BiBTeX, EndNote, RefMan
|Patent Citations (62), Non-Patent Citations (68), Referenced by (67), Classifications (20), Legal Events (6)
|External Links: USPTO, USPTO Assignment, Espacenet
This application claims priority from U.S. Provisional Pat. App. Ser. No. 60/239,614 entitled "Integration of Ferromagnetic Films With Ultrathin Insulating Films for Fabrication of Tunneling Devices Using Atomic Layer Deposition" filed Oct. 11, 2000.
The present invention relates generally to thin film deposition technology pertaining to magnetic storage devices and, more particularly, to a process of manufacturing ferromagnetic-insulator-ferromagnetic tunneling devices in which atomic layer deposition is used to prepare and form the insulator film.
In the manufacture of magnetic storage devices, deposition techniques for thin films of various pure and compound materials have been developed to achieve the deposition of such thin films. Recently emerging spin polarized tunneling devices in ferromagnetic-insulator-ferromagnetic (FM/I/FM) tunneling junctions indicates that this technology has applications for non-volatile magnetic memory elements or storage media.
In the manufacture of FM/I/FM materials, ferromagnetic metallic electrodes for these devices may be deposited using available Physical Vapor Deposition (PVD) processes. Although tunneling devices can be manufactured using the Physical Vapor Deposition process, a number of acute disadvantages are noted with this technique. For example, an ultra thin continuous and high quality insulating (dielectric) film, having a thickness in the range of 5-20 Å, is difficult to achieve with PVD, since discontinuities result with PVD nucleation processes. Furthermore, oxidation of ferromagnetic materials at the FM/I interface may occur during reactive sputtering process from energetic and atomic oxygen and such oxidation is undesirable, since such oxidation at the FM/I interface may be detrimental to device performance. Given the difficulties to deposit continuous oxide films with PVD and given the unavoidable effects of substrate oxidation an alternative PVD solution has implemented sputtering evaporation or molecular beam deposition of ultrathin metal films, such as Aluminum, followed successfully by an in situ oxidation. However, this method may not, so far, produce adequate results. Accordingly, standard PVD techniques may have difficulty meeting the deposition of insulating material (I) on ferromagnetic material (FM).
In the field of chemical vapor deposition (CVD), a process known as atomic layer deposition (ALD) has emerged as a different but promising technique to extend the abilities of CVD. Generally, ALD is a process wherein conventional CVD processes are divided into single-monolayer depositions, in which each separate deposition step theoretically goes to saturation at a single molecular or atomic monolayer thickness and self-terminates when the mono layer formation occurs on the surface of a material. Generally, in the standard CVD process the precursors are fed simultaneously into a reactor. In an ALD process the precursors are introduced into the reactor separately at different steps. Typically the precursors are introduced separately by alternating the flow of the precursor to combine with a carrier gas being introduced into the reactor while coexistence of the precursors in the reactor is maintained by appropriately purging the reactor in between successive introduction of precursors.
For example, when ALD is used to deposit a thin film layer on a material layer, such as a semiconductor substrate, saturating at a single molecular or atomic monolayer of thickness results in a formation of a pure desired film and eliminates the extra atoms that comprise the molecular precursors (or ligands). By the use of alternating precursors, ALD allows for single layer growth per cycle so that much tighter thickness controls can be exercised to deposit an ultra thin film. Additionally, ALD films may be grown with continuity with thickness that is as thin as a monolayer (3-5 Angstroms). This capability is one unmatched characteristic of ALD films that makes them superior candidates for applications that require ultrathin films such as insulator in FM/I/FM devices.
The present invention is directed to providing an ultra thin insulation (dielectric) layer above a ferromagnetic layer by the utilization of atomic layer deposition. Such technique may then be employed to fabricate FM/I/FM tunneling junctions, which may then fabricate magnetic storage devices. Sharp interfaces at the FM/I junctions are considered to be important characteristic for ultimate performance of FM/I/FM tunneling junction devices. Accordingly, integration of ferromagnetic bottom electrode with the insulator is an important aspect of obtaining a good FM/I junction to construct FM/I/FM devices. Current PVD technology implements a sequence of PVD depositions at high and ultra high vacuum as the leading approach for making the interface between the bottom ferromagnetic electrode and the overlying insulator material. PVD alone makes the fabrication of the insulator layer above the ferromagnetic bottom electrode elusive, but especially for an insulator which is oxide and contamination free.
Furthermore, an integration of PVD and CVD based technology is difficult to achieve considering that the difference between the vacuum range of metal PVD (which is at High Vacuum to Ultra High Vacuum) and CVD makes the PVD-CVD integration difficult or impractical. This is especially true in particular with PVD of metals and CVD of insulators. That is, depositing a bottom electrode using PVD and depositing a subsequent overlying layer of a dielectric material using CVD is difficult. Specifically, integration of high vacuum/ultra high vacuum PVD process for the deposition of the ferromagnetic layer and subsequent CVD deposition of a dielectric layer to obtain an ultrathin insulator is a challenge.
In addition, in many instances the bottom electrode of the FM/I/FM needed to be patterned. Patterning the electrode requires a process flow with multiple steps involving photolithography and etch. These steps are bound to contaminate and oxidize the top of FM electrode and subsequently deteriorate the performance of the final device. Therefore, a process flow that may provide means to protect the electrode during pattern delineation is highly desired.
A method and apparatus to deposit a first ferromagnetic metal layer onto an underlying material and to deposit a protective sacrificial layer above the first ferromagnetic layer without exposing the first ferromagnetic layer to ambient environment. Then the ferromagnetic electrode film may be patterned, if necessary. Then, the material is placed into an atomic layer deposition chamber. The protective sacrificial layer is removed in situ to expose the ferromagnetic layer and without exposing the exposed ferromagnetic layer to the ambient environment, a dielectric layer is deposited over the first ferromagnetic layer by atomic layer deposition.
FIG. 1 is a cross-sectional diagram showing a formation of a first ferromagnetic material layer above a substrate in which an overlying protective sacrificial layer is also deposited to cover the first ferromagnetic layer.
FIG. 2 is a cross-sectional diagram showing the patterning and etching of the structure of FIG. 1 to form a FM patterned electrode.
FIG. 3 is a cross-sectional diagram showing a removal of the protective layer of FIG. 2 and a subsequent deposition of a dielectric layer by atomic layer deposition.
FIG. 4 is a cross-sectional diagram showing a deposition of the second ferromagnetic material layer above the dielectric layer of FIG. 3 to form a FM/I/FM structure.
FIG. 5 is a cross-sectional diagram showing an alternative technique of forming another protective sacrificial layer above the dielectric layer of FIG. 3.
FIGS. 6A-B show a flow diagram for practicing one method of the invention.
FIG. 7 is a block diagram showing an apparatus for performing ALD to form a FM/I junction of the invention.
The practice of atomic layer deposition (ALD) to deposit a film layer onto a substrate, such as a semiconductor wafer, or onto another material layer typically entails separately introducing molecular precursors into a processing reactor chamber. The ALD technique will deposit an ultrathin film layer atop the underlying material, whether the underlying material is a substrate or another material layer. As noted above, the growth of the ALD layer follows the chemistries associated with chemical vapor deposition (CVD), but the precursors are introduced separately.
In an example ALD process for practicing the invention, the molecular precursors are introduced into the ALD reactor separately. ALD is achieved by flowing one precursor at a time such as a metal precursor MLx that contains a metal element M, which is bonded to x number of atomic or molecular ligands L to make a volatile molecule. The metal precursor reaction is typically followed by inert gas purging to eliminate this precursor from the chamber prior to the subsequent introduction of the next precursor. An ALD reaction will take place if the surface is prepared to react directly with the molecular precursor. For example, the MLx molecule reacts with a ligand attached to the surface. The surface is typically prepared to include a hydrogen-containing ligand, such as AH, where A is a non-metal element bonded to hydrogen and AH is reactive with the metal precursor. The molecular reaction on the surface proceeds to react with the ligands on the surface and deposit a monolayer of the metal with its passivating ligand, so that the desired reaction is noted as AH+MLx→AMLy+HL, where HL is the exchange reaction by-product. During the reaction the initial surface ligands AH are consumed and the surface becomes saturated with L ligands, that do not further react with the metal precursor MLx Therefore, the reaction self-saturates when all the initial ligands are replaced with MLy species (the subscripts x and y are utilized herein to denote integers, 1, 2, 3, etc.).
After the precursor MLx reacts with the surface and self-saturates to terminate the reaction, the remaining non-reacted precursor is removed, typically by allowing the carrier gas to purge the processing chamber. The second type of precursor is then introduced to restore the surface activity towards the metal precursor by eliminating the L ligands and redepositing AH ligands. In this example, the second precursor is comprised of AHz, A being a nonmetal element (for example oxygen, nitrogen, or sulfur) and H being hydrogen. For example H2O, NH3 or H2S. The reaction ML+AHz→MAHz-1+HL results in a desired additional element A being deposited as AH terminated sights and the ligand L is eliminated as a volatile byproduct HL. This process converts the surface back to the AH terminated sites, which restores the surface to the initial terminations. Again, the reaction consumes the reactive sites (this time the L terminated sites) and self-saturates when the reactive sites are entirely depleted.
The sequence of surface reactions that restores the surface to the initial point is called the ALD deposition cycle. This deposition cycle allows the films to be layered down in equal metered sequences that are substantially identical in chemical kinetics, deposition per cycle, composition and thickness. Self-saturating surface reactions make ALD insensitive to transport non-uniformity either from flow engineering or surface topography (for example, deposition into high aspect ratio structures).
The present invention uses the ALD process to fabricate a sharp interface at the FM/I junction. An improved interface of the FM/I junction may then be utilized in fabricating a FM/I/FM tunneling junction device, for example, one of the above-mentioned ferromagnetic memory devices. Accordingly, an embodiment of the present invention is described below in reference to the shown Figures. In the description, it is also to be noted that the illustrated embodiment forms the junction and also takes into account the prevention of the oxidation of the underlying ferromagnetic metal layer. That is, after the deposition of the bottom ferromagnetic layer, a protective sacrificial layer is formed to prevent oxidation or contamination of the underlying ferromagnetic layer. The extent of such oxidation varies with the material, as well as the cleaning process used, but typically may account for more than 10 angstroms. Accordingly, one technique for practicing the invention attempts to reduce the thickness of this oxidation at the FM/I interface.
In FIG. 1, one embodiment for practicing the present invention is shown. In this particular embodiment, the base material is a substrate 10 upon which other layers are fabricated. Furthermore, the example substrate in this instance is a ceramic wafer utilized for manufacturing of magnetic storage devices. The example method then deposits a first (or bottom) ferromagnetic material above the substrate 10. Generally, the ferromagnetic material is a thin ferromagnetic film layer 11 deposited above the substrate 10. The ferromagnetic layer 11 is also referred to as the bottom electrode layer, since the FM layer 11 forms the bottom electrode of a FM/I/FM device. In the described embodiment, a conventional physical vapor deposition (PVD) process deposits FM layer 11. Generally the deposition is achieved in a PVD chamber having high vacuum (HV of approximately 10−5-10−8 Torr) or ultra high vacuum (UHV approximately 10−8-<10−10 Torr). The HV or UHV environment of the PVD chamber minimizes substrate exposure to oxidizing or contaminating environment, such as ambient environment. The PVD process may deposit a variety of materials to form the FM layer 11. Without limitation, examples of ferromagnetic materials for use in forming FM layer 11 in a PVD chamber are nickel (Ni), iron (Fe) or cobalt (Co), or alloys such as Ni80Fe20, Co50Fe50 and Co84Fe16. The thickness of the FM layer 11 will vary depending on the particular device design desired. However, an example structure for a FM/I/FM device may fabricate the bottom electrode to have a thickness in the range of approximately 80 Angstroms and is approximately a 200 μm wide strip.
Subsequently, a protective sacrificial (PS) layer 12 is formed above the bottom FM layer 11. The formation of the PS layer 12 is achieved without exposing the FM layer 11 to oxidizing or contaminating environment, such as the ambient environment. Generally, ambient exposure is prevented, or at least limited, by depositing the PS layer 12 by continuously maintaining the substrate 10 in the HV/UHV environment utilized to deposit the FM layer 11. The environment integrity may be maintained by depositing the PS layer 12 in the same reactor chamber as used for depositing the FM layer 11 or, alternatively, moving the substrate to another reactor chamber of a cluster tool which maintains the same environment for the various chambers in the cluster. Multiple stage PVD tools which are common in the magnetic storage industry are well suitable to deposit the layers 11 and 12 using 2 different sputtering targets. In the embodiment shown, PS layer 12 is deposited also by a PVD process in the same PVD system.
Alternatively, another common design of these tools is to apply the films on multiple substrates that are mounted horizontally on a platen or vertically on a drum and are rotating continuously against a sputtering source to unify the thickness on all substrates. These types of tools typically have several cathodes (sputtering heads) which allow deposition of different materials without ambient exposure when necessary. Typically about 4-10 heads may be mounted on a horizontal tool and 4-6 heads on a vertical tool. These tools are utilized for depositing the FM layer 11 and may then also deposit PS layer 12 as well.
Generally, the protective layer 12 is comprised of a metallic material, although other material chemistry may be utilized. The composition of the PS layer 12 is such that a given etch chemistry will remove the PS layer 12, but not the underlying FM layer 11. That is, the PS layer 12 is selective over the underlying FM layer 11 when etched. The thickness of the PS layer deposited by PVD will depend on other properties, but typically a thin layer in the approximate range of 50-100 Å ensures continuous and pin-hole free film. A variety of materials may be selected for PS layer 12. In one technique where the FM layer is comprised of the afore-mentioned FM materials (Ni, Fe, Co or their alloys), materials such as tungsten (W), WNx, silicon (Si) and SiNx may be readily used for the composition of the PS layer 12. Again, these materials are noted as examples and no intent is made to limit the PS layer 12 to these materials only. It is appreciated that other metals or metal nitrides may be readily used for the PS layer 12 as well provided that they can selectively etched away, in situ, without affecting the underlying FM layer.
In one example technique, a sequential integrated PVD process deposits a W-based PS layer 12 above the FM layer 11 in a continuous process in the same reactor, simply by firing up a tungsten sputtering source when the FM source is turned off. It is appreciated that other techniques and other materials can be readily used to deposit protective layer 12. What is important is that the underlying FM layer 11 is not exposed to the ambient (or other oxidizing or contaminating) environment. Thus, the protective layer 12 protects layer 11 from oxidation and contamination.
Once the PS layer 12 forms a protective covering over the underlying FM layer 11, the substrate can than be removed from the vacuum environment. Since the FM layer 11 is protected by the PS layer 12, the substrate having the FM/PS structure may now be exposed to the ambient environment as well as to materials and chemistries that comprise a pattern delineation process.
Referring to FIG. 2, the structure of FIG. 1 may then subsequently be subjected to a photolithography and etch to form a patterned FM/PS structure 13. As illustrated in FIG. 2, the PS layer 12 is still present over the FM layer 11 to ensure that the upper surface of the FM layer 11 is still not subjected to the ambient environment. Accordingly, the etch process includes etching PS layer 12 prior to or together with etching FM layer 11.
After completion of the pattern delineated stack 13, the substrate 10 is then placed in an atomic layer deposition (ALD) system which is also under vacuum. It is appreciated that the ALD platform environment may be the same tool as that used for the PVD deposition or, alternatively, the ALD platform may be in a different tool than the tool used for the PVD process. Once under vacuum in the ALD platform, the protective layer 12 is removed by selective etch chemistry. As was noted above, selective etching technique is utilized to remove the PS layer 12 without etching the underlying FM layer 11.
For example, if the FM layer 11 is comprised of materials resistant to fluorine etch chemistry and the PS layer 12 is comprised of W or W-based material, then isotropic fluorine etch chemistry (for example, a remote plasma fluorine chemistry, such as NF3) will selectively etch away the PS layer 12. That is, in a conventional etching technique, NF3 will remove and completely etch materials that have volatile fluoride compounds, such as WF6. This dry chemistry etch does not remove the underlying FM layer 11, since the fluorides of iron (Fe), nickel (Ni) and cobalt (Co) are non-volatile at typical process temperatures approximately below 500� C. Thus, with this selective etching technique the tungsten-based PS layer 12 is removed, while the underlying FM layer 11 remains with its upper surface exposed. Further, the surface of the ferromagnetic material of the FM layer 11 becomes terminated with atomic fluorine by the end of the PS layer 12 removal.
In one embodiment in practicing the invention, the fluorine chemistry continues to be applied to remove the PS layer 12, since continued application of the selective etching chemistry has no adverse effects to the exposed FM layer 11 without detriment. The ability to apply over-etching makes sacrificial layer removal relatively simple and does not require endpoint or tight etch control to prevent over-etching of the underlying FM layer 11. The plasma fluorine chemistry is followed by, for example, NH3/H2 plasma to remove residual fluorine and residual oxygen from the surface of the FM layer 11. This process also activates the surface of the exposed surface of the FM layer 11 for subsequent ALD application to form a continuous interface above the FM layer 11.
In this particular technique when NH3—H2 plasma is utilized, the surface of the ferromagnetic material of the FM layer 11 is tied with NHx species that serve as the reactive site to initiate dielectric ALD and also suppress oxidation by residual H2O from the high vacuum background pressure. Subsequently the NHx terminated surface will be reacted with a metal precursor to initiate ALD of the desired insulating material.
Then as shown in FIG. 3, an insulating or dielectric material layer 14 is deposited by ALD. The ALD deposits a uniform and conformal layer 14 over the substrate 10, including stack 13. Generally, it is desirable to have an insulating material with a large band gap. In particular, Al2O3 has shown desirable properties to serve as a tunneling barrier in FM/I/FM devices. However, in some instances, Al2O3 deposition requires the usage of oxygen source precursors such as H2O. These chemicals may consequently attack the FM surface causing some oxidation and possible degradation. Thus, although so far Al2O3 has been the most promising insulator candidate to practice FM/FM, insulating nitride materials may ultimately be implemented for better reliability.
However in contrast, nitride based insulators, such as AIN and Si3N4 may be better suited for FM/I/FM insulators since these materials are not expected to cause ferromagnetic material degradation. Thus, in other embodiments nitride-based dielectric materials are utilized for dielectric layer 14. In particular, AIN has a band gap of approximately 6 eV, which may facilitate better tunneling control since similar tunneling currents will be achieved with thicker films allowing better control of junction properties. On the other hand, Al2O3 may be integrated and may be facilitated by ALD chemistries that involve very mild oxidants such as tetraethoxysilane (TEOS), which is a very common CVD precursor for SiO2 deposition.
It is to be noted that in the technique described, the dielectric layer 14 is deposited without subjecting the underlying FM layer 11 to ambient environment. Although the thickness of the dielectric layer 14 can be made thick as desired, thickness in the approximate range of 5 to 20 Å are considered to be best and can be achieved with adequate control and continuity by ALD. It is to be appreciated that other chemistries may be utilized to deposit dielectric layer 14 by ALD. The deposition of the dielectric layer 14 by ALD allows for a continuous interface between the FM layer 11 and the overlying dielectric material 14. The continuous interface is achieved since ALD precursors directly bond to the substrate, since films grow layer by layer and since no oxidation or contamination occurs on the surface of the underlying FM layer 11. The deposition of the dielectric material by ALD also permits an ultrathin layer of dielectric material to be formed on the FM layer 11. The ultrathin layer of the dielectric material occurs since ALD deposits one atomic or molecular layer each cycle so that tight tolerances on film thickness may be controlled by the use of ALD to deposit dielectric layer 14.
Following the deposition of the ultrathin continuous insulator material in the form of the dielectric layer 14 by the utilization of ALD, the substrate 10 is unloaded from the ALD platform and loaded again into the PVD platform. As shown in FIG. 4, a deposition of a second FM layer 15 forms the upper or top electrode for the FM/I/FM device. The FM material composition for the FM layer 15 may be the same as for the FM layer 11, although that is not necessarily required. PVD deposition of the second FM layer 15 will be performed with little delay after atomic layer deposition of the dielectric layer 14. The combination of the three layers 11, 14, and 15 forms the FM/I/FM device atop substrate 10. Thus a completed FM/I/FM stack is shown in FIG. 4.
Alternatively, as shown in FIG. 5, a second protected sacrificial layer 16 may be deposited by an integrated ALD of W or WNx deposition following the atomic layer deposition of dielectric layer 14. That is, after forming the dielectric layer 14, the precursor chemistry is changed in the ALD reactor to deposit the second PS layer 16 to protect the underlying dielectric layer 13 from ambient exposure. Two examples are W or WNx for the material of the PS layer 16, however, other materials can be readily used. This PS layer 16 is used to protect the upper surface of the dielectric layer 14 during farther patterning of the dielectric layer, if such patterning is required.
When the PS layer 16 is utilized, the PVD system will require the necessary chemistry to selectively remove the protective layer 16. Thus, in the W or WNx example, the PVD system will be equipped with fluorine etch capability to remove the PS layer 16. Since fluorine chemistries are widespread and generally easy to implement, materials selected for the PS layer 16 can be chosen so that the material will selectively etch in this flowing chemistry. In addition, both Al2O3 and AIN are resistant to fluorine chemistry which makes the selection of material for layer 16 in favor of materials that can be etched with fluorine chemistries. The choice of the PS layer 16 material may also depend on other properties of potential materials. For example, W may be desirable to protect bottom electrode in the case that bottom electrode patterning is desired. In addition to being fairly easy to etch with fluorine chemistries, W may be a good hard mask material with large selectivity for ion milling which is a technique used to etch the Ni—Fe—Co ferromagnetic electrodes following photolithography Tungsten may be conveniently delineated with H2O2 wet etch or with conventional dry fluorine chemistry to expose the underlying FM material. Subsequently the delineated W can be used to improve critical dimension definition by serving as an ion milling hard mask.
It is appreciated that the atomic layer deposition of Al2O3 can be deployed by conventional Al(CH3)3 (trimethylaluminum) H2O or AlCl3/H2O sequences as well as by using the above mentioned aluminum precursors with milder oxidizers such as TEOS. AIN can be deposited by Al(CH3)3/NH3 or AlCl3/NH3 sequences. Finally, ALD can be applied to prepare AlN/Al2O3 stacks or aluminum oxynitride insulators. It is appreciate that various other materials and configurations can be achieved to form various material sequences. Then, as earlier shown in FIG. 4, the second FM material layer 15 is deposited to form the FM/I/FM structure.
It is appreciated that in one technique to practice the invention, it is desirable to separate ALD chambers of oxides and nitrides. Nitride chambers in particular are kept at low levels of residual H2O and other oxidants. If AIN or Si3N4 are suitable as tunneling insulators, the whole integration and deposition process may be carried out in the same chamber. However, if insulators of oxide or oxynitrides are desired, sacrificial layer removal and surface activation may be better achieved in a separate chamber. This chamber may be used for subsequent situ protection of the insulator by a sacrificial W or WN ALD film, if needed.
Furthermore, it is also appreciated that in some instances ALD can be initiated much more readily if a particular surface is pretreated prior to the ALD cycle. For example, in the ALD formation of the dielectric layer 14, pre-treating of the surface of the underlying FM layer 11 may make these surface terminations sights more reactive to the first precursor of the ALD cycle. Such surface pre-treatment to create additional termination sites may be achieved by the introduction of pre-treatment chemicals into the ALD reactor chamber before the precursor is introduced.
Referring to FIGS. 6A-B, a flow diagram 20 exemplifies one embodiment of the base process for forming a FM/I/FM device on a ceramic wafer. After wafer clean (block 21), a first FM layer is deposited by PVD (block 22) followed by a PVD deposition of a PS layer (block 23), without exposing the first FM layer to ambient or other oxidizing/contaminating environment. The FM1/PS stack is patterned and etched (block 24). Next, the wafer is transported to an ALD reactor without concern for FM1 oxidation, since FM1 layer is not exposed. In the ALD reactor, the PS layer is removed (block 25), followed by dielectric (I) layer deposition by ALD (block 26). Finally, the wafer is placed back in the PVD chamber for the PVD deposition of the second FM layer (block 27). It is to be noted that the wafer may be transferred to a different system between the transition between block 26 and block 27.
An apparatus for performing ALD to practice the invention is shown in FIG. 7. An example ALD reactor apparatus 30 is shown. Reactor 30 includes a processing chamber 31 for housing a wafer 51. Typically the wafer 51 resides atop a support (or chuck 33). A heater 34 is also coupled to the chuck 33 to control temperature of the chuck 33 and the wafer 51 for deposition. Processing chemicals are combined with a carrier gas upstream and introduced into the chamber 31 through a gas distributor 35 located at upstream end of the chamber 31. A vacuum pump 36 and a throttling valve 37 are located at the downstream end to draw and regulate the gas flow across the wafer surface.
A manifold 38 combines the various processing chemicals with the carrier gas and the carrier gas/chemical combination is directed to a remote plasma forming zone 39 for forming plasma when necessary. A variety of techniques for combining gasses and forming plasma may be utilized, including adapting techniques known in the art. The remotely formed plasma 39, need not necessarily be placed in-line as shown in the FIG. 7. The carrier gas is then fed through the gas distributor 35 and then into the chamber 31.
The manifold 38 has two inlets for the introduction of chemicals, as well as for the carrier gas. The carrier gas is typically an inert gas, such as nitrogen. Additional inlets can be readily coupled to the manifold 38. In the example apparatus 30, the manifold is a gas switching manifold to switch in the various chemicals into the flow stream of the carrier gas. Chemical A in the example pertains to the first precursor and chemical B pertains to the second precursor for performing ALD for a two precursor process. Chemical selection manifolds 40 and 41, comprised of a number of regulated valves, provide for the selection of chemicals that may be used as precursors A and B, respectively. Inlet valves 42 and 43 respectively regulate introduction of the precursor chemistries A and B into the manifold 38. The valves 42, 43 are typically pulsed open for a certain duration pulse time to control the timing and amount of chemical insertion into the carrier stream.
The particular manifold 38 has a split flow stream of carrier gas. In the diagram, the right flow stream is used to carry chemical A when chemical A is introduced into the carrier gas flow stream. Likewise the left flow path of carrier gas is used for chemical B when chemical B is introduced into the left flow path. It is appreciated that the split flow design of the carrier gas may have additional flow path. The continuous flow of the carrier gas through the split path ensures that a continuous flow is available whenever chemical A or chemical B is introduced into the manifold. Furthermore, when the chemicals are not introduced into the manifold the continuous flow of the carrier gas ensures that the reactor is purged of previous precursors.
In one particular application of the ALD reactor, the carrier gas continuously flows, while chemical A and chemical B are alternatively pulsed into the manifold to pulse the first and second precursors into the reactor chamber. The continuous flowing of the carrier gas between the pulsed opening of the valves 42 and 43 ensures that the reactor is purged of the previous precursor before the next precursor is introduced to the reactor 31. When pre-treatment is desired to initiate the growth of films on different substrates, pretreatment chemicals may be introduced into the manifold 38 through either valves 42, 43 or another valve.
It is appreciated that a number of techniques are available to remove the PS layer overlying the FM layer. In one technique, a cluster tool provides a separate chamber for etching the PS layer and a separate layer for ALD of the dielectric layer. Since both chambers are within the non-ambient environment of the tool, the uncovered FM layer is not exposed (at least considerably limited in exposure) to the ambient.
In another technique, the ALD chamber may also provide both processing functions. Prior to ALD, an etchant may be introduced into the reactor, typically through the manifold 38 of the example system of FIG. 7, so that the etchant may remove the PS layer prior to ALD. The carrier gas would purge the etchant before performing ALD. It is appreciated that other designs may be readily implemented to utilize the same reactor chamber for both removing the PS layer and depositing the dielectric layer by ALD.
Thus, an apparatus and method to perform fully integrated ALD to deposit a dielectric layer over a ferromagnetic layer to form a FM/I junction is described. The technique may be used to fabricate a FM/I/FM device on a ceramic substrate. Other materials may be used for the base substrate (or wafer). The present invention provides integration solution throughout the necessary processes of forming the bottom FM layer and forming a subsequent dielectric layer above the FM layer without (or at least minimized) oxidization or contamination of the FM/I interface. Furthermore, it is to be noted that the technique described above may be applied to form devices other than ferromagnetic memory storage devices. Other structures employing a ferromagnetic insulator tunneling junction can be readily manufactured utilizing various embodiments of the invention.
|Cited Patent
|Filing date
|Publication date
|Nov 25, 1975
|Nov 15, 1977
|Tuomo Suntola
|Method for producing compound thin films
|Dec 11, 1981
|Jun 28, 1983
|Oy Lohja Ab
|Apparatus for performing growth of compound thin films
|Jun 21, 1979
|Nov 1, 1983
|Canon Kabushiki Kaisha
|Method for performing growth of compound thin films
|Feb 8, 1982
|Nov 22, 1983
|Oy Lohja Ab
|Thin film electroluminescence structure
|Oct 17, 1983
|Aug 6, 1985
|Matsushita Electric Industrial Co., Ltd.
|Process of vapor phase epitaxy of compound semiconductors
|Mar 29, 1983
|Aug 6, 1985
|Ushio Denki Kabushiki Kaisha
|Radiant heating apparatus
|May 15, 1986
|Aug 25, 1987
|Ametek, Inc.
|Process and apparatus for forming thin films
|Oct 15, 1987
|May 9, 1989
|Epsilon Technology, Inc.
|Chemical vapor deposition system
|Jun 18, 1987
|Jun 6, 1989
|Epsilon Technology, Inc.
|Heating system for reaction chamber of chemical vapor deposition equipment
|Jun 24, 1987
|Jul 11, 1989
|Epsilon Technology, Inc.
|Reaction chambers for CVD systems
|Apr 18, 1989
|Mar 13, 1990
|Oy Lohja Ab
|Method for generating elecronically controllable color elements and color display based on the method
|Apr 21, 1987
|Apr 3, 1990
|The Board Of Trustees Of The Leland Stanford Junior University
|Thermal/microwave remote plasma multiprocessing reactor and method of use
|May 26, 1989
|Dec 4, 1990
|Junichi Nishizawa
|Semiconductor crystal growth apparatus
|Feb 17, 1987
|Dec 11, 1990
|Lam Research Corporation
|Chemical vapor deposition reactor and method of use thereof
|Mar 23, 1989
|Feb 19, 1991
|Kabushiki Kaisha Toshiba
|Vapor growth apparatus having a diffuser section containing a flow regulating member
|Dec 19, 1986
|Mar 19, 1991
|Applied Materials, Inc.
|Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
|Feb 7, 1990
|May 14, 1991
|The University Of Delaware
|Apparatus for producing compound semiconductor thin films
|Jun 14, 1988
|May 14, 1991
|Scintrex Limited
|Method of determining nitrogen dioxide concentration in a gas sample which contains ozone
|Mar 12, 1991
|Jan 7, 1992
|Raytheon Company
|Reactor vessel for the growth of heterojunction devices
|Jul 24, 1990
|Jan 7, 1992
|Kouji Nishihata
|Low-temperature plasma processor
|Jan 26, 1990
|Jun 9, 1992
|Symetrix Corporation
|Methods and apparatus for material deposition
|May 15, 1989
|Oct 20, 1992
|Rapro Technology, Inc.
|Reaction chamber with controlled radiant energy heating and distributed reactant flow
|Apr 22, 1992
|Mar 16, 1993
|Applied Materials, Inc.
|Thermally processing semiconductor wafers at non-ambient pressures
|Dec 13, 1991
|Apr 20, 1993
|Advanced Technology Materials, Inc.
|Method for delivering an involatile reagent in vapor form to a CVD reactor
|Jul 8, 1992
|Dec 14, 1993
|Fujitsu Limited
|Atomic layer epitaxy of compound semiconductor
|Feb 4, 1993
|Jan 25, 1994
|The United States Of America As Represented By The Secretary Of The Navy
|Atomic layer epitaxy (ALE) apparatus for growing thin films of elemental semiconductors
|Sep 11, 1991
|Mar 15, 1994
|Lam Research Corporation
|CVD platen heater system utilizing concentric electric heating elements
|Apr 25, 1991
|Jun 14, 1994
|Silicon Valley Group, Inc.
|Primary flow CVD apparatus comprising gas preheater and means for substantially eddy-free gas flow
|Nov 19, 1993
|Aug 9, 1994
|Motorola, Inc.
|CVD reactor with uniform layer depositing ability
|Jun 30, 1994
|Jan 16, 1996
|Tokyo Electron Kabushiki
|Thermal processing method and apparatus therefor
|Nov 29, 1994
|Sep 3, 1996
|Sharp Kabushiki Kaisha
|Liquid crystal display having zinc sulfide switching elements and method for producing the same
|Apr 14, 1994
|Dec 10, 1996
|Applied Materials, Inc.
|Single substrate vacuum processing apparatus having improved exhaust system
|Jun 15, 1993
|Dec 2, 1997
|Research Development Corporation Of Japan
|Growth of doped semiconductor monolayers
|Nov 28, 1995
|Jan 27, 1998
|Mikrokemia Oy
|Method and equipment for growing thin films
|Jul 13, 1995
|May 12, 1998
|Shin-Etsu Handotai Co., Ltd.
|Method of chemical vapor deposition and reactor therefor
|Aug 5, 1996
|Aug 4, 1998
|Kokusai Electric Co., Ltd.
|Substrate processing apparatus
|May 22, 1997
|Dec 22, 1998
|Lucent Technologies Inc.
|Process for passivating semiconductor laser structures with severe steps in surface topography
|Aug 29, 1997
|Mar 9, 1999
|Genus, Inc.
|Vertically-stacked process reactor and cluster tool system for atomic layer deposition
|Aug 16, 1996
|Jun 29, 1999
|Sherman; Arthur
|Sequential chemical vapor deposition
|Feb 23, 1996
|Aug 10, 1999
|Applied Materials, Inc.
|Chemical vapor deposition chamber
|Apr 30, 1997
|Sep 28, 1999
|Nec Corporation
|Method for manufacturing a semiconductor memory device having a ferroelectric capacitor
|Mar 12, 1998
|Dec 28, 1999
|Cosmos Factory, Inc.
|Liquid precursor delivery system
|Aug 28, 1998
|Feb 22, 2000
|Lucent Technologies Inc.
|Process for fabricating vertical transistors
|Sep 7, 1999
|Mar 28, 2000
|P.K. Ltd
|Atomic layer deposition apparatus for depositing atomic layer on multiple substrates
|Aug 21, 1998
|Apr 18, 2000
|M.E.C. Technology, Inc.
|Showerhead electrode for plasma processing
|May 14, 1999
|Apr 25, 2000
|Advanced Micro Devices, Inc.
|Semiconductor interconnect barrier for fluorinated dielectrics
|Aug 20, 1998
|Jun 20, 2000
|The United States Of America As Represented By The Secretary Of The Navy
|Process for making a semiconductor device with barrier film formation using a metal halide and products thereof
|Oct 2, 1997
|Jul 18, 2000
|University Technology Corporation
|Method of growing films on substrates at room temperatures using catalyzed binary reaction sequence chemistry
|Jun 8, 1999
|Sep 26, 2000
|Lucent Technologies Inc.
|Method of reducing carbon contamination of a thin dielectric film by using gaseous organic precursors, inert gas, and ozone to react with carbon contaminants
|Sep 30, 1998
|Oct 31, 2000
|Samsung Electronics Co., Ltd.
|Method of and apparatus for forming a metal interconnection in the contact hole of a semiconductor device
|Aug 27, 1998
|Nov 7, 2000
|Samsung Electronics, Co., Ltd.
|Method for manufacturing aluminum metal interconnection layer by atomic layer deposition method
|Mar 11, 1999
|Mar 13, 2001
|Genus, Inc
|Radical-assisted sequential CVD
|Aug 9, 1999
|Aug 7, 2001
|Samsung Electronics Co., Ltd.
|Method for manufacturing thin film using atomic layer deposition
|Dec 17, 1999
|Oct 23, 2001
|Genvs, Inc.
|Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition
|Feb 14, 1991
|Aug 21, 1991
|Sumitomo Electric Industries, Ltd.
|Method for producing single crystal boron nitride film
|Jan 16, 1991
|Nov 4, 1992
|Neste Oy
|Process and apparatus for preparing heterogeneous catalysts.
|Title not available
|Title not available
|Title not available
|Title not available
|Title not available
|Jan 16, 1991
|Jul 25, 1991
|Neste Oy
|Process and apparatus for preparing heterogeneous catalysts
|Bedair, S. M. "Atomic Layer Epitaxy Deposition Processes," J. Vac. Sci. Technol. (1994) B12(1): 179-85.
|Bedair, S. M. et al., "Atomic Layer Epitaxy of III-V Binary Compounds," Appl. Phys. Lett. (1985) 47(1): 51-3.
|Colas, E. et al., "Atomic Layer Epitaxy of Device Quality GaAs," Appl. Phys. Lett. (1989) 55 (26): 2769-71.
|Colter, P.C. et al., "Atomic Layer Epitaxy of Device Quality GaAs with a 0.6 pm/h Growth Rate," Appl. Phys. Lett. (1991) 59(12): 1440-42.
|Dillon, A.C. et al., "Surface Chemistry of A1203 Deposition Using Al(CH3)3 and H2O in a Binary Reaction Sequence," Surf. Sci. (1995) 322(1-3): 230-42.
|Farrell, J.T. et al., "High Resolution Infrared Overtone spectroscopy of N2-HF: Vibrational Red Shifts and Predissociation Rate as a Function of HF Stretching Quanta,"J. Phys. Chem. (1994) 98(24): 6068-74.
|Freitas et al. (Intermag 2000 Digest of Technical Papers) Inspec abstract Sep. 2000.*
|Fujiwara, H. et al., "Low Temperature Grown of ZnS,, Sel_, Alloys Fabricated by Hydrogen Radical Enhanced Chemical Vapor Deposition in an Atomic Layer Epitaxy Mode," J. Appl. Phys (1993) 74(9): 5510-5.
|George, S. M. et al., "Atomic Layer Controlled Deposition of Si02 and A1203 Using ABAB . . . Binary Reaction Sequence Chemistry," Appl. Surface Sci. (1994) 82/83: 460-7.
|George, S.M. et al., "Surface Chemistry for Atomic Layer Growth," J. Phys. Chem . . . (1996) 100(31): 13121-31.
|Goodman, C. et al., "Atomic layer Epitaxy," J. Appl. Phys. (1986) 60(3): R65-R81.
|Gotoh, J. et al, "Low-Temperature Growth of ZnSe-Based Pseudomorphic Structures by Hydrogen-Radical-Enhanced Chemical Vapor Deposition," J. Cryst. Growth (1992) 117: 85-90.
|Higashi, G. et al., "Sequential Surface Chemical Reaction Limited Growth of High Quality A1203 Dielectrics," Appl. Phys. Lett. (1989) 55(19): 1963-5.
|Hukka, T. et al., "Novel Method for Chemical Vapor Depostion and Atomic Layer Expitaxy Using Radical Chemistry," Thin Solid Films (1993) 225: 212-18.
|Imai, S. et al., "Atomic Layer Epitaxy of Si Using Atomic H," Thin Solid Films (1993) 225: 168-72.
|Imai, S. et al., "Hydrogen Atom Assisted ALE of Silicon," Appl. Surf. Sci. (1994) 82-83: 322-6.
|Kattelus, H. et al., "Layered Tantalum-Aluminum Oxide Films Deposited by Atomic Layer Epitaxy," Thin Solid Films (1993) 225: 296-98.
|Kizilyalli et al. Derwent Abstracted Publication GB 2344694A "High dielectric constant capacitors for DRAM . . ." Jul. 25, 2000.*
|Klaus, J.W. et al., "Atomic Layer Deposition of Si02 Using Catalyzed and Uncatalyzed Self-Limiting Surface Reactions," Surf. Review and Letters (1999) 6(3-4): 435-48.
|Klaus, J.W. et al., "Growth of Si02 at a Room Temperature with the Use of Catalyzed Sequential Half Reactions," Science (1997) 278(5345): 1934-6.
|Kodama, K. et al., "In situ X-ray Photoelectron Spectroscopic Study of GaAs Grown by Atomic Layer Epitaxy," Appl. Phys. Lett. (1989) 54(7): 656-7.
|Koleske, D. et al., "Atomic Layer Epitaxy of Si on Ge(100) Using Si2C16 and Atomic Hydrogen," Appl. Phys. Lett. (1994) 64(7): 884-6.
|Koleske, D. et al., "Surface Morphology of Si on Si(100) Grown Below 500 Degrees C Using H/CI Exchange Chemistry," J. Appl. Phys. (1993) 74(6): 4245-7.
|Lubben, D. et al., "UV Photostimulated Si Atomic-Layer Epitaxy," Mat. Res. Soc. Symp. Proc. (1991) 222: 177-187.
|McDermott, B. et al., "Ordered GalnP by Atomic Layer Epitaxy," J. Cryst. Growth (1991) 107 (1-4): 96-101.
|Moodera, J. et al., "Interface Magnetism and Spin Wave Scattering In Ferromagnet-Insulator-Ferromagnet Tunnel Junctions", Physical Review Letters 80 (13) Mar. 30, 1998, pp. 2941-2944.
|Moodera, J. et al., "Spin Polarized Tunneling in Ferromagnetic Junctions", Journal of Magnetism and Magnetic Materials 200 (1999) 248-273.
|Nishizawa, J. et al., "Molecular Layer Epitaxy of Silicon," J. Cryst. Growth (1990) 99: 502-5.
|O'Hanlon, J. "Gas Release From Solids," A User's Guide to Vacuum Technology (1989) Chap. 4: 56-71.
|Ott, A. W. et al., "Modification of Porous Alumina Membranes Using A 1303 Atomic Layer Controlled Deposition," Chem. of Materials (1997) 9(3): 707-14.
|Ott, A.W. et al., "$urface Chemistry of In2O3 Deposition Using In(CH3)3 and H2O in a Binary Reaction Sequence," Appl. Surf. Sci. (1997) 112: 205-15.
|Ott, A.W. et al., "A 1303 Thin Film Growth on Si(100) Using Binary Reaction Sequence Chemistry," Thin Solid Films (1997) 292(1-2): 135-44.
|Ozeki, M. et al., "Kinetic Processes in Atomic-Layer Epitaxy of GaAs and AIAs Using a Pulsed Vapor-Phase Method," J. Vac. Sci. Technol. (1987) B5(4): 1184-86.
|Ritala, M. et al. "Growth of Titanium Dioxide Thin Films by Atomic Layer Epitaxy," Thin Solid Films (1993) 225: 288-95.
|Ritala, M. et al., "Surface Roughness Reduction in Atomic Layer Epitaxy Growth of Titanium Dioxide Thin Films," Thin Solid Films (1994) 249: 155-62.
|Roth, A. "The Vacuum," Vacuum Technology (1990) Chap. 1: 1-7 and Chap. 2: 28-45.
|Sakaue, H. et al., "Digital Chemical Vapor Deposition of Si02 Using a Repetitive Reaction of Triethysilane/Hydrogen and Oxidation," Jpn. J. of Appl. Phys. (1990) 30(113): L124-7.
|Singer Peter "Atomic Layer Deposition Targets Thin Films" Semiconductor International, Sep. 1, 1999.*
|Slaughter et al. JOM-e, 52(6)(2000). Jun. 2000 electronica article, JOM: The Member Journal of The Minerals, Metals & Materials Society <<http://www.tms.org/pubs/journals/JOMS/0006/Slaughter/Slaughter-0006.html>>.*
|Sneh, O. and George S. "Diffusion of Xe on a Stepped It (11, 11,9)) Surface," Am. Chem. Soc. Abstracts of Papers (1993) Part 2 (235).
|Sneh, O. and George, S. "Xenon Diffusion on a Stepped It (11, 11,9)) Surface," J. Chem. Phys.(1994) 101(4): 3287-97.
|Sneh, O. et al., "Adsorption and Desorption Kinetics of H2O on a Fully Hydroxylated Si02 Surface," Surface Science (1996) 364: 61-78.
|Sneh, O. et al., "Atomic Layer Growth of Si02 on Si(100) Using SiC14 and H2O in a Binary Reaction Sequence," Surf Sci.. (1995) 334: 135-52.
|Sneh, O. et al., "Atomic Layer Growth of Si02 on Si(100) Using the Sequential Depostion of SiC14 and H2O," Mat. Res. Soc. Symp. Proc., (1994) 334:25-30.
|Sneh, O. et al., "Atomic Layering Shows Its Metal," European Semiconductor (2000) 22(7): 33-6.
|Sneh, O. et al., "Sample Manipulator Employing a Gas-Thermal Switch Designed for High Pressure Experiments in an Ultrahigh Vacuum Apparatus," J. Vac. Sci. Technol. (1995) A13(2): 493-6 '.
|Sneh, O. et al., "Thermal Stability of Hydroxyl Groups on a Well-Defined Silica Surface," J. Phys. Chem.. (1995) 99(13): 4639-47.
|Somorjai, G. "An Introduction to Surface Chemistry and Catalyst," Surface (1994) Chap. 1: 12-7.
|Sugahara, S. et al., "Atomic Layer Epitaxy of Germanium," Appl. Surf. Sci. (1994) 82-83: 380-6.
|Suntola, T. "Atomic Layer Epitaxy," Handbook of Crystal Growth 3 (1994) Chap. 14: 605-63.
|Suntola, T. "Atomic Layer Epitaxy," Materials Science Reports (1989) 4:261-312.
|Suntola, T. "Atomic Layer Epitaxy," Thin Solid Films (1992) 216: 84-9.
|Suntola, T. "Cost Effective Processing by Atomic Layer Epitaxy," Thin Solid Films (1993) 225: 96-8.
|Suntola, T. "Surface Chemistry of Materials Deposition at Atomic Layer Level," Appl. Surf Sci. (1996)'100/101: 391-8.
|Suntola, T. "Surface Chemistry of Materials Deposition at Atomic Layer Level," Appl. Surf Sci. (1996)′100/101: 391-8.
|Suntola, T. et al., "Atomic Layer Epitaxy," Blackie & Son Ltd. (1990): 1-39.
|Tischler, M.A. et al., "Growth and Characterization of Compound Semiconductors by Atomic layer Epitaxy," J. Cryst. Growth (1986) 77: 89-94.
|U.S. Patent Application, Ser. No. 09/480,804, entitled "Fully Integrated Process For MIM Capacitors Using Atomic Layer Deposition".
|Watanabe, A. et al., "The Mechanism of Self-Limiting Growth of Atomic Layer Epitaxy of GaAs by Metalorganic Molecular Bean Epitaxy Using Trimethylgallium and Arsine," Jpn. J. ofAppl. Phys. (1989) 28(7): L 1080-82.
|Wise, M.L. et al., "Adsorption and Decomposition of Diethyldiethoxysilane on Silicon Surfaces: New Possibilites for Si02 Deposition," J. Vac Sci. Technol. (1995) B 13(3): 865-75.
|Wise, M.L. et al., "Diethyldiethoxysilane as a New Precursor for SiO2 Growth on Silicon," Mat. Res. Soc. Symp. Proc., (1994) 334: 37-43.
|Wise, M.L. et al., "H2O Adsorption Kinetics on Si(111) 7x7 and Si(111) 70 Modified by Laser Annealing," J. Vac. Sci. Technol. (1995) Al 3(4): 1853-60.
|Wise, M.L. et al., "Reaction Kinetics of H2O with Chlorinated Si(I 11)-7x7 and Porous Silicon Surfaces," Surf. Sci.(1996) 364(3):367-79.
|Wise, M.L. et al., "H2O Adsorption Kinetics on Si(111) 7�7 and Si(111) 70 Modified by Laser Annealing," J. Vac. Sci. Technol. (1995) Al 3(4): 1853-60.
|Wise, M.L. et al., "Reaction Kinetics of H2O with Chlorinated Si(I 11)-7�7 and Porous Silicon Surfaces," Surf. Sci.(1996) 364(3):367-79.
|Yamaga, S. and Yoshikawa, A. "Atomic Layer Epitaxy of ZnS by a New Gas Supplying System in Low-Pressure Metalorganic Vapor Phase Epitaxy," J. Cryst. Growth (1992) 117: 152-155.
|Yarnoff, J. et al., "Atomic Layer Epitaxy of Silicon by Dichlorosilane Studied with Core Level Spectroscopy," J. Vac. Sci. Technol. (1992) A10(4): 2303-7.
|Yokoyama, H. et al., "Atomic Layer Epitaxy of GaAs Using Nitrogen Carrier Gas," Appl. Phys. Lett. (1991) 59(17): 2148-49.
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|Jun 4, 2012
|Feb 26, 2013
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text:
How to Thrive — Not Just Survive
Families in ministry have a lot to juggle - not only the responsibilities of ministry, church, and society, but also raising children and developing family life at the same time. This book examines some of the specific areas that families involved in ministry have to face, and offers suggestions for spouse dialogue, creative activities, and practical ways to apply these at home in your family. Twenty-seven personal testimonies from families all over the world provide encouragement and inspiration for the daring and courageous adventure of being a family in ministry.
This book is also designed to be used as a course manual for groups of parents, encouraging group discussion and learning together from one another's experiences.
Also available in Russian
We are happy to announce that our book "Families in Ministry" is now available in Russian language. We had been waiting for the release for a long time and it was quite an effort by very dedicated people to make this book available to a huge number of people in the Russian speaking world.
Excellent and Practical Help
To equip and release families into their God-given calling and to see our society changed and transformed by such families is one of the very urgent and important tasks of the Body of Christ. This book is an excellent and practical help and inspiration in this. Angela and Andreas Frész share not just theory or ideas but real life stories and examples. I highly recommend this book to read and to put it into practice."
Christoph Leu, King's Kids International, Exec. Director
Timely, Down-to-Earth and very Readable
Angela and Andreas have given us a book that is timely, down-to-earth, practical and very readable. Today's families in ministries need this type of clear advice from those who have "walked the talk"!
Highly recommended reading.
Jeff & Romkje Fountain
The Truths They Share Are Authentic
I have had the priviledge of working closely with Andreas and Angela since 1990. They and their two children helped me and my wife staff a three-month YWAM Family Ministry School in the U.S. I have been in their home on numerous occasions since that time and have personally observed how they live out the principles presented in this practical and insightful book. I can testify that the truths they share are authentic and have been lived out on their own family. If you are called to serve the Lord as a family and are feeling overwhelmed by the pressures and demands of ministry, this book is for you. You, too, can thrive and not just survive.
Larry Ballard, former director of YWAM Family Ministries International


text:
Joplin has a population of 45,504 and is located in Jasper county.
The average in-state tuition for full time undergraduate students in rn schools in Joplin during the 2009 - 2010 school year was $7,234.00. The average tuition was $8,306.00 for non-residents studying in Missouri.
The average cost of books and supplies for rn schools in Joplin is $929.00. Students who live on campus while attending a rn school in Joplin, can expect to pay an average of $4,556.00 for room and board. Students who live at home can expect average costs to be $3,595.00. There is one rn college in Joplin for students to choose from. 37 students were reported to have graduated from rn programs in Joplin in the 2008 - 2009 school year.
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In a recent speech to an industry audience at the London Film Festival, Michael Barker, the co-founder and co-president of Sony Pictures Classics, made some startling remarks. Barker suggested, almost in passing, that we are currently in a vintage period for independent and art house cinema. He also spoke of the "richness" of current British cinema.
As if to underline Barker's observations, many of the most prominent films at the London Film Festival (LFF) turned out to be by British film-makers: Clio Barnard's The Selfish Giant, Paul Greengrass's Captain Phillips, Stephen Frears' Philomena, Steve McQueen's 12 Years a Slave, Ralph Fiennes' The Invisible Woman, Jonathan Glazer's Under the Skin, Steven Knight's Locke, David Mackenzie's Starred Up.
This year hasn't yielded any equivalents to the box-office bonanza that The King's Speech or Skyfall brought British cinema, but there have been plenty of very strong director-driven films bound to stand the test of time.
Although Barker is a far less flamboyant figure than Harvey Weinstein, he is arguably just as influential. Since he started in the business in the early 1980s, the Texan executive has co-produced, co-financed and distributed films by François Truffaut, Louis Malle, Ang Lee, Woody Allen and many other auteurs.
But his remarks went against the grain. Orthodox thinking is that indie cinema, in the UK as elsewhere, is in a prolonged slump. The economics no longer add up. Broadcasters aren't buying movies in the numbers they once did. The box office is dominated by Hollywood blockbusters. Across Europe, public funding for film is shrinking. The DVD sell-through market is continuing to buckle, while online distribution remains in its infancy. Film critics, who've historically championed new work and alerted their readers to it, are an increasingly endangered species. A common refrain, repeated so often it becomes tiresome, is that the best work now being done is in television, in dramas such as Breaking Bad and Mad Men.
Earlier this autumn, adding to the sense of gloom in the independent film sector, James Schamus, the writer of many of Ang Lee's movies and a patron of British filmmakers including Mike Leigh, Joe Wright and Roger Michell, was ousted from his job as the boss of Focus Features, Universal's "specialty" label. To many, this was confirmation that Hollywood had lost patience with director-driven art-house fare. Who needs Brokeback Mountain (one of Scahmus' most famous films) when you can have The Avengers and other franchises, seems to be the philosophy. Who needs British films either? If Focus Features is now to be taken in a more obviously commercial direction, it is unlikely its new bosses will want to support independent British filmmakers.
Barker, though, continues to argue that there are strong business as well as cultural reasons for supporting auteurs. His strategy hasn't changed since he and his partner Tom Barnard (then at United Artists) released Truffaut's The Last Metro (1980.) Directors are always given final cut. Budgets are kept down. The aim is to make films with artistic integrity that will last, not simply to go after the opening weekend audience. Initial numbers may not be spectacular but, Barker suggested, significant profits can still be "eked out" in the long run.
Since the break up of the UK Film Council in 2011, there has been a subtle but significant change in the approach to film funding in the UK, which is now closer to that taken by Barker at Sony Pictures Classics. Most importantly, there is more trust in the film-makers.
During the early days of the Film Council, the emphasis was on supporting producers rather than nurturing auteurs. The rhetoric from senior Film Council figures was about creating "large companies with clout and market capitalisation who are in there for the long term" and of being "more industry friendly and much more commercially focused". The Film Council Chief Executive John Woodward told one newspaper that the Film Council would help finance "popular films that the British public will go and see in the multiplexes on Friday night". The Film Council's then chairman Alan Parker made a controversial speech in which he talked of "distribution pull, not production push".
The main goal was to gain access to international distribution for British films. The actual films to be fed into the distribution system seemed almost like an afterthought. Script development executives, shaping new projects into pre-ordained shapes, held more sway than the directors with strong personal visions. It was little wonder that, in such a climate, auteurs such as Terence Davies felt so neglected. The British were essentially trying to make mainstream, studio-style movies.
In a digital era in which anyone can upload a movie, access to distribution is no longer the issue. As the co-chairman of Working Title Tim Bevan pointed out in a Creative Content Summit during last year's London Olympics, "distribution was absolutely king 25 years ago, now the balance has shifted. Access to distribution is easy, it's the access to creative quality, or even to financing creative quality, that's rare."
The Brits have largely stopped making gangster movies and derivative comedies in a desperate, and usually forlorn, bid to find an audience. There is at last space once again for filmmakers with strong and idiosyncratic personal visions. That's why 2013 can fairly be described as a vintage year for British cinema in spite of the absence of blockbuster successes. Like Sony Pictures Classics, the most important British funders, the BFI, BBC Films and Film4, are now all prepared to back the talent even when it veers off in the most oblique directions.
There was nothing obviously commercial about many of the movies from British directors that screened in the LFF. Fiennes's The Invisible Woman, about the secret relationship between Charles Dickens and Nelly Ternan, isn't the typical British period drama. It's a brooding, hermetic film about a love affair that was kept secret at all costs. Steven Knight's Locke is set entirely inside one car, with only one character (played by Tom Hardy), making and receiving phone calls. 12 Years a Slave is a gruelling drama about slavery that left many audience members reeling. A Selfish Giant is a grim but beautifully made drama that combines social realism and fairy tale elements to heartbreaking effect.
We are still missing Harry Potter, which for many years was the British film industry's equivalent to North Sea oil (even though the films were made for Warner Bros). Nonetheless, in the range and adventurousness of the films made by British directors, 2013 has surely been a banner year. For now at least, there is a sense that we are ready to invest in the talent. That, Barker reminded us as he reminisced about United Artists before the calamity of Heaven's Gate, was what made UA work – and is likely to prove good business in the long run too.
"They (UA) really backed people like Stanley Kramer, Stanley Kubrick and Billy Wilder … they tended to continue with those filmmakers and they had a theory that there was nothing totally reliable in the film business except the choice of a talent. If they [the directors] made a movie that didn't work, you'd just keep making movies with them. Over time, it's that talent which will be more reliable as a business barometer than almost anything else!"Reuse content


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Love our new cooktop
By Yools
from Media, PA
Comments about Bosch 500 Series 30" Stainless Steel Gas Cooktop:
This was exactly what we were looking for. The design is well thought out and the quality is evident in all the features. The knobs feel sturdy, the grates are heavy and have rubber pads where the meet the stainless. Easy to clean up with soapy water. The self lighting feature if the flame goes out is a great feature. It's super high quality and gorgeous. We're in love!
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Happy with ABT delivery and communications.
Bottom Line Yes, I would recommend this to a friend
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Works as described
By Tony D.
from Illinois
Heats up extremely fast and the burners are laid out perfectly. If you enjoy cooking and don't want a 5 burner cooktop, I would highly recommend purchasing this cooktop. The power burner is quicker than I could have imagined and brings things to a boil rapidly.
I love this stove top!
By Kathy
from Northbrook
About Me Avid Cook
I use the stove most nights to cook dinner.
Delivery team was very polite and helpful.
(1 of 1 customers found this review helpful)
Beautiful, sturdy, hardworking cooktop
By Al the Kiter
from Chicago
About Me Casual Cook
We do cook in our house, and this going ok is very effective.
We picked up the cooktop. Abt is a wonderful supplier, one can always buy with confidence.
(1 of 2 customers found this review helpful)
fantastic stove
By BlueFinJim
from Chicago Illinois
Great appliance easy to clean
(3 of 3 customers found this review helpful)
Best Cooktop ever purchased
By JenYen
from Deer Park, IL
About Me multiple per day user
This is the best cooktop I ever used. Deep recess pan make this cooktop looks nice on the counter, the stainless steel is very easy to clean. This was my major concern since I stir fry a few time per day. The heavy duty grid makes it very easy to switch cookware from one burner to the other. The right hand burner with 16000 BTU is perfect for Chinese Stir Fry. I prefer the 4 burners over 5 burners because the space in the middle gives you space to use bigger cookware in the other four burners.
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Tom Daley has the third best selling calendar of the year in the UK, despite being for 2013 and only being released a month ago. So who's topping Daley? One Direction holds the number two spot, while the top slot is held by Justin Bieber.
The Talk's Aisha Tyler will be guest starring on Glee as the mother of the younger Puckerman, Jake. That should make for an interesting family dynamic.
The latest positive indicator for Mitt Romney's campaign is that the Redskins lost this weekend. For the last 18 elections, if the Redskins won the home game before the election, the party that was in power stays in power, but if they lose, the other party takes over.
Kylie Minogue says that she's working on her new album, and while she may embrace her inner Ibiza, she hopes to bring songs like "Flower" that are more personal into the mix.
The Independent on Sunday has released their annual Pink List, and topping the list is British boxer Nicola Adams. The Pink List is always a bit of a challenge to an outsider with the marriage of celebrities, personalities and politicians that an American may not be as familiar with, but I take umbrage at the fact that my future ex-husband Russell Tovey has dropped from 49 to 64. Gareth Thomas has also dropped into the list at #19, having been a judge last year.
This news is a month old, but I must have missed Lance Out Loud, about PBS star Lance Loud, written by his mother Pat Loud. Despite the period, it sounds like Pat never even blinked at her son being gay, or the life he lived in New York, with Andy Warhol and his band playing CBGB. "I went to CBGBs several times. Lance's band The Mumps was one of first bands to play at CBGBs. There was Blondie, Talking Heads, The Ramones – I saw all those bands."
Chris Geidner spent quite a bit of time in the lion's den, interviewing the National Organization for Marriage's Brian Brown, who sounds like he's in it for the long haul, regardless of public opinion on marriage. Even if they start losing votes, they'll continue to fight. "There's no reason we can't go back. This is never over. We're not giving up any ground. Ever. We're going into Iowa. Why are we spending all these resources in Iowa. We've never hidden it. We want to defeat the judges, and we want to have a constitutional amendment. And, guess what? Mike Gronstal is about to lose. He's not going to be Senate leader. And we're going to get a vote in Iowa. And the whole notion that we're somehow in a containment mode will be done. We're going into Iowa, we're gonna get a vote, and we're gonna win the vote. And, people can say that this isn't gonna happen, but it is."
Chris Kluwe has announced he will no longer blog for the St. Paul Pioneer Press after the newspaper released an editorial that claimied to be neutral on the issue of the marriage amendment in that state, but was obviously worded to support the amendment banning marriage equality. Kluwe said the editorial attempted "to confuse people through obfuscation and selected presentation of arguments." As for the paper, they're not happy about losing Kluwe, noting "[Kluwe's] 'Out of Bounds' blog has occasionally brought six-figure page views."
Buzzfeed has a collection of pictures of what appears to be a nude James Franco, covered in various colors of paint, and the bed he rolled around on to create "art."
Modern Family has tapped Elizabeth Pena to play Gloria's mother, having previously named Stephanie Beatriz as her sister. I wonder if her family is as bold as Gloria?
A hedgehog got trapped in a potato chip bag and required a two and a half hour rescue involving six people. If you're wondering how it took two hours to remove one of the world's cutest animals from a crisp bag, he'd evidently fallen behind a railing, requiring the rescue charity to cut the railing to get to the little critter.
Jorge Pazos, the boxer defeated last month by openly gay boxer Orlando Cruz waves off concern that he was defeated by a gay man. "I fought an Olympian," he says. "I fought Orlando Cruz."
Tyler Shields has a sexy new photoshoot with the cast of Revenge
New York Magazine presents a stunning cover this week
Don't judge Jonathan Knight
This cat took Kevin McHale for a walk on a leash. Because a cat would never consent to be leashed
The cast of Kinky Boots wants you to vote
Johnny Weir and his husband Victor Voronov in Russia. I hope not a part of Russia that the kiss is illegal
GPOY. I can't wait for it to end
Rachel Weisz's character in Oz, The Great and Powerful
Brandon Routh is into bears
Saturday Night Live had a couple of moments I enjoyed this weekend. My favorite recurring sketch is always Fox & Friends, since they manage to capture the ridiculous nature of that show perfectly. Having them bring on a serious, knowledgeable representative of FEMA was sure to bring some laughs.
The cold open was a welcome break from the endless debates, as they took on Mayor Bloomberg and his effusive sign language translator, followed by Gov. Chris Christie and his praise for President Obama in the wake of Hurricane Sandy, who brought his own, fitting interpreter.
Julie Brown was a 1980s funny lady, much as Victoria Jackson was before she lost touch with reality. Julie gives Victoria a pretty decent send up here, but it's really hard to parody someone like Jackson, who I keep expecting to announce that the last couple of years was a weird performance art piece.
Will Ferrell will do literally anything to get you to vote come Tuesday. Personally, I'd like him to stop making movies. Will you do that, Ferrell?
Ally Pauley Perrette is pretty sick right now, but she couldn't let this election go by without reaching out to people about just how important it is to vote for President Obama, especially if you care about rights for women and the GLBT community.
Since we missed Partners last week due to storm coverage, we didn't get to see the kiss between Brandon Routh's character and Sophia Bush. This week, they resort to a joke about Routh's own past in the real world. I really want to like this show, but they need to do better than this.
Need a reason to support marriage equality at the polls this week? Here are a few.
I'm not entirely sure why animated movies made outside Disney, Sony and Dreamworks always feel so hollow, but the latest example is Escape From Plant Earth, about a space hero who braves the universe's most feared planet, Earth, only to be captured and put into Area 51, which turns out to be the home of every major technological advancement the world has ever experienced.
For something completely different, try the thriller Side Effects, starring Channing Tatum, Rooney Mara, and Jude Law. If Tatum doesn't shed more clothes than is evident in the trailer, I can't see it holding my interest.


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suprised by the amount of chain growth on the bikes with a DW link!
Added a comment about photo 17 Bikes Tested - 2016 Vital MTB Test Sessions 1/20/2016 3:26 AM
This photo has 17 comments.
Added bike check 2016 Production Privee Shan 27 Diamond Reverse 1/8/2016 4:03 AM
Added reply in a thread 2016 Racing Rumours 1/8/2016 3:12 AM
to clear one thing up, KTM are racing Moto GP in 2017 but have developed the bike in-house thus far... http://www.motogp.com/en/news/2015/11/02/succesful-debut-for-ktm-s-rc16-motogp-bike/188719
Added reply in a thread 2016 Racing Rumours 1/7/2016 4:34 AM
thats the only thing that would worry me a little - he went to specialized and couldn't get used to it at all. not until they changed it for something which was designed around him from the ground up. The Tues looks like a solid bike and I've heard good ... more »
Added reply in a thread 2016 Racing Rumours 1/7/2016 4:17 AM
I doubt they're short on the dollars needed to pay him either, from what I can gather, almost 100% of the bikes they sell (in the U.K for example) are cash sales - no need for expensive distribution deals etc. It'd be interesting to see how a really ... more »


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Severn Valley Guesthouse
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The Cotswolds in a Morgan
... I would have been compatible. Anyway, we drove back through Upton-upon-Severn and Bishops Cleve and into the lovely Cotswolds on a bright sunny day. Manual steering and partly mechanical brakes kept me on my toes at first but the wooden frame was wonderfully flexible and I was able to throw the car around nicely. Our car had a MX-5 gearbox and a Ford 2lt motor and performed very well. The tight twisting roads through the Cotswolds were ...
Farewell to England. and lets bring on Spain!
Our stay in the United Kingdom this time is only about five days. We had travelled fairly extensively throughout the British Isles on our last trip and we always had planned to head South. The few days here were really only for getting over jet lag and for playing golf. Having done that, we hit the road to head to Birmingham and our flights to Spain.
Along the way we stopped at a charming English town ...
Morgan Car Factory
After leaving Gloucester we by chance came across the Morgan Car Factory, after a drive through The Malverns, a beautiful area in South Worcestershire.
Morgans are still completely hand made, with either steel or aluminium chassis and wooden frames (made of Ash). They come in 4 or 8 cyl motors in convertible or sedan configuration, or the 3-wheeler which has a 115hp motor in 4 cyl.
West Midlands Safari Park
... and the doors locked before going thro the double gate system into the big cat enclosures. A pride of female lions freely roamed and came so close to the car it was unbelievable. Cheetahs were behind wire fences, as were tigers and painted African dogs, but the highlight were the white tigers (now extinct in the wild) and white lions (only 70 left in the wild in a small area of South Africa) which included a gorgeous male white lion keeping a dignified distance from his harem. ...
Man Test
We went on a mission to test our manhood. Taking the exact kit we'll have on the road when we do set off, we walked deep into the Wyre Forest and set up camp, we drank from a puddle, baked bread and got our feet completely soaked. The next day when we woke up our boots were frozen solid. Man test - PASSED


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Wego.com.sg recently found 9 hotels in Bergun, Switzerland. Book last minute hotel or find great hotel deals such as Kurhaus Bergun Hotel for S$235 per night. Save more on cheap hotels with rates from as low as S$235 per night.
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2 Woodside, Lipson, Plymouth PL4 8QE.
Care home
Email the owner or 01752 220692
"Bethany Christian Home aims to provide a warm and homely atmosphere for the elderly, catering especially for those with a Christian faith. It is expected that individuals will be encouraged to maintain their independence for as long as is possible.
Objectives; Links with residents' churches will be maintained through morning prayers. The Home will have individual care plans agreed with each resident, which will be reviewed on a regular six monthly basis. Residents will be consulted as regards the activities of the Home. A Keyworker system of care will be operated. Staff will meet on a regular basis for appropriate training and for review of standards of care. Support from other agencies will be sought for the continuing care of residents"
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2 Woodside, Lipson, Plymouth PL4 8QE
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#OURHOUSE is where Arizona Football lives. It's where the game is bigger, better and live. It's where fans and players connect, and where we get to show our pride.
Read full story ›
Home Schedule
September 10
Grambling State
September 17
September 24
October 15
October 29
November 12
November 25
Arizona State
It's the place to be on a Saturday night, to bring the family, to create some memories and be part of ARIZONA FOOTBALL history. Get into the game, go all in, get geared-up and don't miss a moment.
Read full story ›
Family Game Night
Day or night, bring the kids to the game for fun, excitement, and making memories. Park downtown and ride the new modern streetcar onto campus for a short walk to the stadium. Join in the pre-game fun at the Family Fiesta on the UA mall, and during halftime be sure to visit Pinkberry on the north concourse for a mid-game sweet treat. The action, the cheers and fun in Arizona Stadium will keep the family engaged. Make Arizona Football a family tradition and choose your seats now.
Friends' Night Out
Wear the colors and meet your buddies or besties at the tailgate area on the UA mall for some fun and pre-game excitement. There are plenty of food options to choose from including food trucks and tailgate areas open to the public for a small fee. A short stroll away is Arizona Stadium where you'll cheer your Wildcats onto the field with a bang as fireworks fly and music fills the stands. You'll want to be able to tell all your friends you were there for that great Arizona moment or amazing play, so don't miss it and get your seats now.
Game Day Adventure
Plan a game day adventure with your friends. Experience the sights and sounds of the University area with a stop at Main Gate Square for a bite to eat and a short walk or ride to the game on the modern streetcar. Or, if you drive with 4 or more of your friends, you can park in a garage with free carpool access and everyone can ride to the game free in one of our shuttles. Arizona Stadium is the place to be on game day with the excitement, sights and sounds of college football all around you. Food and beverages are sold throughout the stadium and there's easy access to seating levels for fans with disabilities. Don't miss a moment of the excitement, get your tickets now.
Phoenix Fans
We love our fans from the Phoenix Valley and we hope you can join us in Arizona Stadium this season for all the home games. Jump on the Cat Cruiser with your fellow Wildcats at one of the convenient pickup locations and enjoy a stress-free ride to the game. Once on campus, you can enjoy the pre-game Fan Fiesta and greet and walk with the team to the stadium during the Wildcat Walk. Get your daily workout jumping and cheering the team to victory and don't miss a moment of the history-making plays Arizona Football is known for.
Learn more Phoenix-area fan info ›
Enjoy the Game in Style
Up your game and enjoy Arizona Football in style. We have many premium seating options with great views of the game available in several locations around the stadium. Options include the west side Loge Seating–a covered open-air area featuring oversized chairback seats and armrests with access to pre-game buffet, drinks, snacks and adult beverages for purchase. Visit our Premium Seating Page for more details, or get your tickets now.
Take the elevator to the climate controlled Super Suite Skybox which includes padded theatre style seats with TVs for game play and instant replays and access to pre-game buffet, drinks, snacks and adult beverages for purchase. Visit our Premium Seating Page for more details, or get your tickets now.
Our newest fan upgrade is the eastside 100 level-A section seating featuring new chairback seats with armrests. Be closer to the action and out in the exciting game environment while having quick access to the Stadium Club. Explore the possibilities in #OURHOUSE and get your tickets today.
Parking made simple
There are quick and easy ways to get to the stadium:
Park along the modern street car route and take the Sun Link Street Car to campus.
Park in one of the garages on campus for $5 or $10. Free carpool parking for 4 or more occupants. The Park Avenue and Speedway garage provides a free shuttle to the game.
Additional surface lot parking is available to Wildcat Club members. Inquire with the ticket office.
Key dates
Season ticket & Wildcat Club donation renewal deadline
Mini-plans on sale online only at ArizonaWildcats.com beginning at 10 a.m.
(Phone and in-person sales begin July 27 at 9 a.m.)
Wildcat Club and Season Ticket Holder exclusive early purchase window begins for single game tickets on sale at ArizonaWildcats.com at 10 a.m.
(Phone and in-person sales begin July 11 at 9 a.m.)
Away game ticket orders begin
Single game tickets go on sale to the general public at ArizonaWildcats.com at 10 a.m.
(Phone and in-person sales begin July 27 at 9 a.m.)
Arizona Football is experiencing its best success in history. 33 WINS – the most wins in a 4 year period. EVER. That's right. WE are building a legacy and YOU need to be a part of it.
Read full story ›


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Women's NIKE® PRO HYPERCOOL CAPRI :: Turn up the heat on your workouts while staying cool and comfy from start to finish with the Women's Nike® Pro Hypercool Capri. Breeze through any workout catching plenty of airy ventilation from the back mesh panels that also provide extra move-free comfort. You'll love the amazing feel of the fabric that's the perfect combo of stretchy softness, and sweat won't stand a chance of sticking around thanks to the Pro Hypercool Capri's super moisture-wicking properties.
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