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|Publication number
|Publication type
|Application number
|Publication date
|Jun 18, 1996
|Filing date
|May 8, 1995
|Priority date
|May 8, 1995
|Fee status
|Publication number
|Joseph E. Farb
|Original Assignee
|Hughes Aircraft Company
|Export Citation
|BiBTeX, EndNote, RefMan
|Patent Citations (3), Non-Patent Citations (2), Referenced by (52), Classifications (10), Legal Events (5)
|External Links: USPTO, USPTO Assignment, Espacenet
1. Field of the Invention
The present invention relates to magnetic field detection, and more particularly concerns solid state magnetic field sensing employing the Hall effect.
2. Description of Related Art
Magnetic sensors or magnetometers have long been used to sense motion and/or position of moving parts, such as, rotating gears or shafts. As use of computers for controlling moving machinery is more widespread, and as electronic sensing and control is more extensively used in controlling operation of moving parts, it becomes increasingly necessary to sense various conditions in the machine so as to provide required inputs to the electronic controls and computers. Automobile engines are one example of complex machines employing computer control that require sensing of various conditions to be provided to a computer that controls operation. Thus, magnetic sensors are employed to sense shaft rotation, rotation of gears, and motions of such automotive components as cam shafts, speedometers, and ignition distribution systems, for example.
A typical magnetometer includes a permanent magnet producing a permanent magnetic field that is disturbed by some part formed of magnetic material that is positioned or moves near the magnetic field. The disturbance of the magnetic field is detected by a magnetic sensor of some type to indicate position or motion of the moving part of magnetic material.
Prior magnetic sensors have employed magneto resistors and reluctance detectors. Sensitivity of such devices is poor, and it is difficult, if not impossible, for such devices to provide good signal output in the presence of low magnetic fields.
Solid state resistors have been employed in various types of sensing arrangements. In one prior sensing system a solid state resistor of relatively large dimensions is subjected to a current flow across the resistor in a first direction so that the presence of a magnetic field directed perpendicular to the plane of the resistor causes a differential voltage at opposite sides of the resistor, in a direction perpendicular to the flow of current and to the magnetic field direction. This differential voltage is a measure of magnetic field magnitude. Again, such sensors have poor sensitivity and do not provide good signals with a low magnetic field. Moreover, the resistor can provide an output indicating only the average of the magnetic field over its entire area so that the relatively large size of the resistor inherently compromises resolution.
Certain materials are known to change resistance in the presence of a magnetic field, and these too have been employed for magnetic sensing, but they are excessively expensive and difficult to manufacture.
Thus, magnetic sensors heretofore available have low sensitivity, relatively low resolution, are large and bulky, and are expensive to manufacture.
Accordingly, it is an object of the present invention to provide magnetic field detection that avoids or minimizes above-mentioned problems.
In carrying out principles of the present invention in accordance with a preferred embodiment thereof, a substrate has a source region and first and second drain regions spaced from each other and from the source region. A bifurcated charge carrier channel connects the source region with each of the drain regions so that the Hall effect caused by presence of a magnetic field that is to be detected causes flow of current to split unevenly between the branches of the bifurcated charge carrier channel. A current difference detecting circuit connected to the two drain regions provides an indication of magnitude and sense of the magnetic field by indicating magnitude and sense of the difference between the current flows in the two channel branches.
According to one embodiment of the invention a magnetic field detector is formed in the very thin single crystal silicon layer of a silicon-on-insulator (SOI) substrate by lightly doping the thin silicon layer to provide N-type silicon, and more heavily doping mutually spaced source and drain regions to provide N+ source and drain regions. A polysilicon gate having a configuration that defines the bifurcated charge carrier channel is laid down over a thin gate oxide on the thin silicon layer and extends between the source and drain regions. The polysilicon gate is employed as a self-aligning mask for implanting N-type impurities into the source and drain regions. The polysilicon gate is also employed as a self-aligning mask for implanting P-type impurities in the thin silicon layer to define the bounds of the N- charge carrier channel. According to a feature of the invention, the doping of a thin silicon layer of the SOI substrate extends completely and uniformly through the entire thickness of the very thin silicon layer.
According to another feature of the invention, the width of the N- channel is significantly greater than the thickness of the silicon substrate.
In the accompanying drawings:
FIG. 1 is a simplified electrical schematic diagram of a two stage Hall effect magnetic field detector embodying principles of the present invention;
FIG. 2 is a plan view showing a single stage solid state triode magnetic field detector formed on silicon-on-insulator (SOI);
FIG. 3 is a section taken on lines 3--3 of FIG. 2;
FIG. 4 is a section taken on lines 4--4 of FIG. 2;
FIGS. 5, 6, 7 and 8 illustrate certain steps in the manufacture of a the solid state triode magnetic field detector of FIGS. 2 through 4;
FIG. 9 illustrates orientation, configuration and positioning of a mask for doping P+ regions;
FIG. 10 illustrates orientation and configuration and positioning of a mask for doping N+ regions;
FIG. 11 illustrates the geometry of an exemplary three stage embodiment of the solid state Hall effect magnetic field detector; and
FIG. 12 illustrates a different geometric configuration.
The simplified electrical circuit of FIG. 1 shows a two stage Hall effect magnetic field detector in one exemplary configuration and is presented to explain principles of operation of the present invention. A first electrically conductive bifurcated line, generally indicated at 10, includes a base leg 12 and first and second branch legs 14 and 16. Each of the branch legs 14 and 16 itself is connected to another bifurcated electrically conductive line 18 and 20, respectively. Bifurcated line 18 includes a base leg 22 connected to branch leg 14 of the bifurcated line 10 and further includes first and second branch legs 24,26, both connected to a common end of base leg 22 of the bifurcated line 18. Similarly, bifurcated line 20 includes a base leg 28 connected at its end to first and second branch legs 30,32 at a common junction of the base leg with the branch legs. The ends of each of the four branch legs 24,26,30,32 of this two stage device are connected by means of electrically conductive lines 35,36,37,38 to an amplifying and difference calculating circuit 40, which includes circuitry that amplifies the input signals on lines 35 through 38 and can calculate the difference between one or more pairs of its input signals. For example, the circuit 40 will amplify input signals on lines 36 and 38, which come from branch legs 26 and 32, respectively, and provide an output signal on a line 42 indicative of the difference between the signals on lines 36 and 38. Alternatively, the difference between signals in the lines of each of pairs 35,36 and 37,38 may be computed.
Branch leg 12 of the first bifurcated line 10 terminates at a contact 44, which is connected to a suitable source of potential, such as ground, for example. Power to the circuit is provided from the amplifying and difference circuit 40, and thus current will flow through the several branch circuits 10, 18 and 20.
In the presence of a magnetic field having lines of flux that extend perpendicular to the plane of the circuit 12,14,16 (assuming the legs 12, 14, and 16 all lie in a common plane, which may be the plane of the drawing) current flowing in the base leg 12 divides unevenly as it flows from base leg 12 into branch legs 14 and 16. That is, because of the Hall effect, current flowing from contact 44 toward the circuit 40 will divide between branch legs 14 and 16 in proportion to the magnitude of a magnetic field to which the bifurcated circuit line is subjected. If the magnetic flux is in a first direction, that is, going down into the plane of the paper for example, a first one of the branch legs 14 and 16 will flow a larger proportion of the current, whereas, if the magnetic field flux is in the opposite direction (coming up out of the plane of the paper), the other of the two branch legs will flow a larger proportion of the current. Current flowing in branch leg 14 flows through base leg 22, and, in the presence of the same magnetic field, also divides in proportion to the magnitude of the magnetic field, and in a sense according to direction of the magnetic field, between branch legs 24 and 26. Similarly, current flowing in branch leg 16 flows into base leg 28 and again divides proportionally in accordance with the magnitude and sense of the magnetic field between branch legs 30 and 32. The current flowing in the branch legs 24,26,30 and 32 is then received by the circuitry 40, which calculates and signals the difference, on the output line 42, between the various current flows. Differences may be taken between any pair of the current flows in lines 35 through 38, or, for example, between the lines of the pair 36,38 and again between the lines of the pair 35,37 to provide two separate readings that may be averaged.
Effectively, the bifurcated circuits are cascaded so as to multiply the division of the current that is caused by the Hall effect. For example, assume that the current ratio for the bifurcated line 10 is 1.2:1, so that the current flowing in branch leg 14 is 1.2 times the magnitude of the current flowing in branch leg 16 (in the presence of a magnetic field). The current flowing in branch leg 14 is again split in bifurcated circuit 18 between its branch legs 24 and 26 so that current splits at the same ratio and the current flowing in branch leg 26 becomes 1.2 times the current flowing in branch leg 24. Thus, the current in branch leg 26 is now 1.22 or 1.44 times the current flowing in branch leg 32. Further cascading is readily possible, as by, for example, adding additional bifurcated circuits, one having a base leg connected to branch leg 26 and another having a base leg connected to branch leg 32, for example. This cascading can be carried on to cascade as many stages as desired, thereby significantly enhancing system sensitivity. The current difference between selected pairs of final branches of a multiple cascaded circuit thus gives a larger signal for a given magnitude of magnetic field.
By implementing the circuit described in FIG. 1 in a silicon-on-insulator (SOI) process, as will be described below, the magnetic sensor exhibits a significantly greater sensitivity to magnetic fields than does a prior conventional resistive type (N-type) silicon Hall effect magnetic sensors. Not only is the device illustrated in FIG. 1 more sensitive, but, as indicated, a number of stages can be cascaded together to effectively multiply the effect on a single stage, thereby significantly further increasing sensitivity.
A presently preferred SOI implementation of one stage of the circuit of FIG. 1 is shown in FIGS. 2, 3, and 4, wherein a silicon-on-insulator substrate, generally indicated at 46, includes a base silicon wafer 47, having a thickness of approximately 500 microns, bonded to a silicon dioxide layer 48, having a thickness of approximately 1 to 2 microns, and topped by a very thin single crystal silicon layer 49 having a thickness of about 0.3 to 0.5 microns or 3,000 to 5,000 angstroms. The uppermost layer 49 is covered by a thin gate oxide layer 50 of about 100 to 500 angstroms in thickness and upon which an electrically conductive polysilicon gate 52, of about 0.5 microns in thickness, is positioned. The polysilicon gate has the generally bifurcated horizontal configuration illustrated in FIG. 2, to be described in detail below. The term "horizontal" is used herein to denote directions extending parallel to the planes of the SOI substrate and its several layers, and the term "vertical" denotes a direction perpendicular to the horizontal.
The silicon layer 49 is lightly doped with phosphorus ions to provide an N- silicon which is more heavily doped with phosphorus ions at N+ source and drain regions. Layer 49 is also doped with boron ions generally over areas not covered by the polysilicon gate 52, as will be described in detail below, to provide P+ regions in a configuration mating with the configuration of the polysilicon gate 52.
As indicated in the plan view of FIG. 2, the N- silicon layer 49 is formed with a first N+ region 54 forming a source and second and third N+ regions 56,58 forming drains. The polysilicon gate has a configuration indicated by the darkened or shaded lines in FIG. 2. In the arrangement shown in FIG. 2 the polysilicon gate includes a first gate portion 52a that effectively encircles the N+ source region 54, a second gate portion 52b that encircles the first N+ drain region 56 and a third gate portion 52c that encircles the second N+ drain region 58. Between the gate portions 52a,52b, and 52c the polysilicon gate forms a narrow bifurcated gate including a narrow poly base leg 52d connecting with first and second narrow poly branch legs 52e and 52f. The poly gate portions 52a-52c and 52d-52e are all integral with each other, as illustrated.
Coextensive with and underlying the poly base and branch legs 52d,52e and 52f is a narrow N- channel 60 that is congruent with, and, as will be more particularly described below, effectively and indirectly defined by the polysilicon gate legs 52d,e, and f.
The area surrounding and completely bounding the N- channel 60 that underlies the polysilicon gate is all doped with boron ions to provide P+ regions 64a,64b,64c, and 64d. A layer of dielectric, such as an electrically non-conductive glass 65 (FIGS. 3 and 4), covers the polysilicon gate and all P+ and N+ regions. Glass 65 is omitted from FIG. 2 for clarity of illustration. Just above each of the source and drain regions there is a hole 66a,66b, and 66c formed through the glass dielectric and the gate oxide 50, which is filled with a metallized conductive material and connected to respective metal conductors 67a,67b, and 67c. The metallized holes 66a-c and metallized conductors 67a-c provide electrical contacts and leads to connect the source and drain regions, respectively, to external circuitry. Similarly, one or more holes 68 are formed through the glass dielectric and the gate oxide 50 above the P+ regions and connected to one or more metallized leads 69 that provide an electrical contact from external circuitry to all of the P+ areas, all of which are electrically connected in common. A suitable electrical connection (not shown in FIG. 2) is also provided for the polysilicon gate 52.
The above-described device forms a solid state triode that provides a Hall effect magnetometer. It is readily manufactured by conventional processes employed for manufacture of N- channel, CMOS devices. Standard CMOS procedures are modified to provide for self-alignment of N+ and P+ doping regions (as described in detail below), and also to ensure uniformity of the doping through the complete thickness of the thin single crystal silicon layer 49. Manufacturing starts with provision of a silicon-on-insulator substrate, such as the SOI material available from Hughes Danbury Optical Systems. As previously described, such SOI substrate includes a silicon base 47 (see FIG. 5), a thinner oxide layer 48 and a very thin single crystal silicon layer 49. As previously mentioned, the single crystal silicon layer has a thickness in the order of about 0.3 to 0.5 microns, or about 3,000 to 5,000 angstroms.
As a first step, the layer 49 is subjected to several phosphorus ion (N-type) implants or doping of different energies to accomplish a doping of the SOI layer 49 uniformly from its top to its bottom over its entire thickness. In a particular example, for a silicon layer of 3,000 angstroms, this N-type doping of layer 49 takes place in three steps at implant energies of 32.1 KEV, 86 KEV, and 186 KEV, respectively. The order of these doping steps may be reversed if desired. If deemed necessary or desirable, a diffusion step at this point (after all N-doping steps) will help to make the doping more uniform. Such diffusion step includes the heating of the substrate. It will be understood that the higher implant energies should be used for silicon layers of thicknesses greater than 3,000 angstroms, and for greater thicknesses one or more additional implants steps will be used to avoid too great a difference between energy levels of successive steps.
Next, the thin gate oxide layer 50 is grown on the silicon layer 49, as shown in FIG. 5.
The next step is to cover the gate oxide surface 50 with a layer of polysilicon, which is then masked and etched to delineate the regions that will be doped with boron ions to form the P+ regions, and with phosphorus ions to form the N+ source and drain regions. The P+ regions will define self-aligned channel regions of depleted space charge. The polysilicon layer, after masking and etching, has the horizontal configuration such as shown for the polysilicon 52a-f of FIG. 2, having a generally bifurcated central section with a base leg 52d and branch legs 52e and 52f connecting respectively with the poly sections 52a,52b and 52c that circumscribe source and drain regions 54,56,58. A section of the assembly constructed to this point appears as illustrated in FIG. 6.
Now a mask is applied to the device, having a configuration as illustrated by mask sections 70a,70b,70c of FIGS. 7-9. FIGS. 7 and 8 show sections through one of the drain regions (region 56), but before the N+ implantation. The mask sections are provided for covering and masking the N+ source and drain areas 54,56,58 during the P+ implantation. Each mask section, as can be seen in FIGS. 7,8, and 9 has substantially the same configuration as the source and drain region holes, but is larger, having its outer edges 71 positioned inwardly (at about one-half gate width) of the outer edges 72 of the polysilicon gate section 52c. With this arrangement the high energy boron implant is self-aligned by the edges 72 of the gate, with the mask sections merely blocking the openings in the ends of the polysilicon gate that circumscribe the source and drain regions. These source and drain regions are to be subjected to a phosphorus N+ implantation in a subsequent step. FIGS. 7-9 show the relation of the mask sections 70a,70b,70c to the polysilicon gate section 52c, showing the mask edges 71 stepped back inwardly from the outer edges 72 of the poly gate. The mask can be precisely configured, but equal precision in positioning several masks to obtain precision in relative positioning is very difficult, if not nearly impossible. Therefore, by using the polysilicon gate to align the P+ (and N+) doping regions, the problems of mask alignment are effectively avoided.
Operation of the polysilicon gate as a self-aligning mask is illustrated in FIG. 8, which shows the arrangement of FIG. 7 subjected to boron ion implantation that is depicted in FIG. 8 by the arrows designated as P+. The P+ ions pass through the very thin gate oxide coating 50 and into the crystal silicon layer 49 in areas that are precisely delineated, not by the mask 70, but rather by the edges 72 of the polysilicon 52. At the narrow gate leg sections 52e and 52f, etc. (see FIG. 2) no mask is needed during P+ ion implantation. Thus, the polysilicon 52 indirectly defines the position and configuration of the very narrow N- channel because the polysilicon directly defines the areas reached by the P+ implant ions, and the position and configuration of the P+ area in turn directly delineate the N- channel 60 that forms the electron conductor of the Hall effect sensor. The N- depletion channel 60 is directly bounded and defined by P+ regions on either side of the channel.
The doping of the single crystal silicon layer must be uniform from top to bottom in order to obtain uniform N- channel width from top to bottom of the silicon layer 49. For this reason the layer 49 is made with a very small thickness (the 0.3 or 0.5 micron thickness is the presently preferred thickness), and the P+ implantation is performed in several steps with different energies. For example, for the boron ion implant in a 0.3 micron layer, four implant steps are employed in sequence, the first at an energy level of 6.85 KEV, a second at 19.48 KEV, a third at 43.27 KEV, and the last at 80.25 KEV. This sequence may be reversed, with 80.25 KEV first, if desired. Again, greater implant energies or even more implant steps may be used for layers of a thickness greater than 0.3 microns. To smooth variations in the vertical profile of implant ion density from top to bottom of the 0.3 micron single crystal silicon layer, the implants may be diffused slightly in a heating step (following completion of the four ion implant steps) by heating the device for about one hour at approximately 850� C., for example.
Having performed the P+ implants, the N+ implants for the source and drain regions 54,56,58 are now accomplished.
A similar procedure is followed to form the N+ implants. Again, a mask slightly smaller than the polysilicon gate is employed. For N+ implanting of the N+ source and drain regions, the implanting is performed through the holes originally formed in the polysilicon gate, which holes conform to and directly delineate the desired area of the source and drain regions. The holes in the gate 52 are defined by gate inner edges 82 (FIG. 10). For example, as shown in FIG. 10, a portion 80 of the polysilicon gate, having an outer edge 81. An inner edge 82 of this gate portion 80 delineates a hole that defines the area 84 of the N+ region that is now to be implanted. A mask 86 is employed, having a hole 88 that is stepped back (about one-half the gate width) from the inner edge 82 of the hole in the poly gate so that it is the poly itself that aligns the N+ implant at this time. Mask 86 is employed to block the N+ implant from all portions of the device other than the source and drain regions 54,56,58 and, therefore, covers other parts of the polysilicon gate and all of the P+ regions. Because the N+ implants form contact regions, uniformity of implantation density is not needed at these areas. In an exemplary process the N+ implantation is done by a single step of implanting phosphorus ions with an energy of about 50 KEV.
After completion of all implants, the entire device, polysilicon gate N+ source and drain regions, and P+ regions are covered with a flow glass 65 (FIGS. 3 and 4) which is a dielectric material that is heated to flow over and cover the entire surface. Thereafter the several contact holes are etched through the flow glass and gate oxide layer 50 above the source and drain regions and at one or more areas of the P+ regions. These contact holes are filled with metal and connected to metal conductive lines, which are formed by conventional procedures. Conductive lines are also connected to the polysilicon gate through holes (not shown) formed in the flow glass.
It will be understood that the sensor described above is utilized with other circuitry, such as indicated in FIG. 1, including amplifying, difference calculation .and processing circuitry or the like, and that such other circuitry may also be formed together with the described CMOS process simultaneously with the described forming of the magnetic field detection portion of the apparatus.
According to a significant feature of the invention, the P+ regions are uniquely positioned and configured to define a narrow N- channel that is a depleted space charge region having charge carriers of exceedingly high mobility. An N- channel width of 2 microns is presently preferred. A width greater than about 5 to 10 microns or less than about 0.5 microns makes the device very difficult to control. Thus, a very narrow high mobility N- channel is defined and bounded by the P+ areas, with this channel having a precise and exceedingly uniform cross sectional area throughout its length. The width of the channel is precisely uniformly defined from top to bottom of the silicon layer 49 by the uniformity of the P+ doping, and the uniformity of the depth or thickness of the channel from top to bottom of the silicon layer 49 is defined by the uniformity of the thickness of this layer itself. Preferably the channel width is not less than two times the thickness of the silicon layer 49, in order to allow for possible P-type side diffusion.
The single stage device shown in FIGS. 2, 3 and 42 has a single N+ source 54 and two N+ drains 56 and 58. The P+ regions effectively provide the gate of the device, and voltage applied to the polysilicon gate is maintained to keep the surface accumulation or inversion constant for optimal operation. Source 54 is grounded, a negative voltage of up to 10 volts is applied to the P+ areas, to thereby strongly pinch off the N- channel defined between the P+ areas, and a positive voltage of up to 10 volts is applied to the drains 56 and 58 to draw electrons from the source through the depleted space charge region of the N- channel. Electron transport through this depleted space charge region is similar to that of a solid state triode and exhibits exceedingly high carrier mobility, which in turn enhances sensitivity by resulting in a greater difference in current split in the presence of a magnetic field.
As previously described, if a magnetic force is applied with lines of flux extending normal to the plane of the device in either direction (e.g., into or out of the plane of the paper), the electrons in the N- channel (at the potential minimum from the P+ regions on either side) experience a force that causes more of such electrons to flow into one of the branches of the bifurcated channel than the other. By measuring the electrical current difference in the two drains, magnetic field intensity is measured. This current difference is linearly proportional to magnitude of magnetic field strength. The very high mobilities of electrons in the N- channel depletion region exhibit great sensitivity to magnetic fields. Further, because of the very narrow size, width and length of the device, its resolution is high, since the device experiences only a small area of a applied magnetic field, namely in the area of its bifurcated end channel. Further, as mentioned above, several stages can be cascaded together to multiply the effect of the current split in each stage.
FIG. 11 illustrates an alternative embodiment in which the geometry of the bifurcated channels is changed to form a three stage arrangement with connections to contact pads external to the sensor but formed on the same substrate. FIG. 11 shows only the horizontal geometry of the bifurcated channels, with all-layers above the channel bearing layer 49 removed.
A first bifurcated channel 102, having a base leg 104 and first and second branch legs 106,108, extends from a source region 100. Branch leg 106 forms a base leg of a second bifurcated channel 110, having branch legs 112 and 114. Part of a third stage is formed by a bifurcated channel 116 having branch legs 118 and 120 which terminate in N+ drain regions 122 and 124, respectively. Similarly, base leg 114 of bifurcated channel 110 has branch legs 126,128 which terminate in N+ drain regions 130,132. The branch leg 108 of the first bifurcated channel 102 similarly branches first and second times to provide second and third stages, having branch legs finally terminating in N+ drain regions 140,142,144,146. The arrangement is symmetrical about the base leg 104, with the two halves, starting with branch leg 106 on the one side and branch leg 108 on the other side, being identical to one another.
A contact lead 150 connects source region 100 to a pad 152 formed in the silicon layer 49 as one of an array pads 152a,152b,152c,152d, 152e,152f, and 152g, among others (not shown). Lead 150 is connected to the source region through a metal filled hole 151 in the gate oxide that overlies the source region. Similarly, each of the drain regions is connected to its lead through a metal filled hole extending through the gate oxide between the lead and the N+ drain regions. Each of the drain regions 122,124,130,132,140,142,144,146 are connected by leads indicated at 160a-160h to different ones of the pads 152a-152g, excepting in this illustration pad 152c. The latter is connected by a poly lead 166 to the P+ area 164 that is delineated in the drawing by the rectangular line 165. All of the area within the rectangle 165 of FIG. 11 is P+, except, of course, for those areas containing the N- channel and the N+ source and drain regions. The P+ area is connected by one or more leads 166, which may include a second lead 168, also connected to the P+ area by means including a metal filled hole 168a extending from the lead 168 through the gate oxide layer 50 to the P+ silicon region in the silicon layer. Similarly, lead 166 connects to the silicon layer through the gate oxide by means of a metal filled hole 166a extending through the gate oxide. Each of the pads 152a-152g may have a dimension in the order of 4 mils on a side, which, of course, is significantly greater than the total area of the source and drain regions, but is in the order of about one-half or slightly less than the total area of the entire P+ region 165. The polysilicon gate is not shown in FIG. 11, but, as in FIGS. 2-4, extends along and above the illustrated bifurcated channels.
In the three stage arrangement of FIG. 11, the final difference in the current split between the two symmetrical halves of the cascaded stages is effectively the cube of the current split in one channel, presuming that the bifurcations of the N- channels are all symmetrical. Thus, for example, if the current ratio for a single split is 1.2:1, the ratio for a three stage sensor or three cascaded splits is 1.23 :1 or 1.728:1. Of course, additional stages beyond three cascaded stages may be used if deemed necessary or desirable.
FIG. 12 illustrates another arrangement of a three stage triple cascaded bifurcated N- solid state triode channel which operates precisely the same as the arrangement of FIG. 11 but differs only in employing a different horizontal geometry of the layout of the three cascaded bifurcated channels. Again, the arrangement of FIG. 12, like that of FIG. 11, shows only the horizontal layout of the P+, N- and N+ regions with their electrical connections, but does not show the overlying poly gate or its electrical connections. An N+ source region 200 is connected to a first bifurcated channel 202, including a base leg 204 and branch legs 206,208. Branch leg 206 forms the base leg of a second bifurcated channel 210 having branch legs 212,214. Leg 212 forms the base leg of a third bifurcated channel 216 having branch legs 218,220, each of which has its end connected to an N+ drain region 222,224. Branch leg 214 similarly forms the base of a bifurcated channel having branch legs 226,228 which terminate in N+ drain regions 230,232. Again the three cascaded stages are symmetrical about the right and left side, as viewed in FIG. 12, so that branch leg 208 forms the base leg of an additional bifurcated channel having branch legs which in turn form base legs of third stage bifurcated channels. The third stage branch legs terminate in N+ drain regions 240,242,244,246.
Source 200 is connected via a hole 251 extending through the gate oxide to a metal lead 250 that connects to a pad 252, formed as one of a plurality of connecting pads 252a-252g and others (not shown) formed in the single crystal silicon layer 49. In a like manner, each of the drain regions 222,224,230,232,240,242,244,246 are connected by leads 260a-260h, respectively, and suitable metal filled apertures through the gate oxide, to different ones of the connecting pads, only some of which are shown in FIG. 12. In the arrangement of FIG. 12 a plurality of conductive leads 268a-268i are connected to contacts 270a-270g, which are connected through metal filled apertures in the gate oxide to different areas of the P+ region, it being understood that all of the area of the sensor within the rectangle 265 is doped with P+ ions, excepting only those areas of the source and drain regions and the N- channels. The P+ regions in and around the drain and source regions and the N- channels are as previously described, self-aligned and delineated by the polysilicon gate (not shown in FIGS. 11 and 12). P+ connecting leads 268c-268i are all connected to a common P+ connecting bus 280, having legs 281 and 282 which connect at points 283,284 to two leads 286,288 that connect to pads 252a and 252c. Leads 268a and 268b extend to points 290,291 in the P+ region for direct connection to the P+ region through the gate oxide. The arrangement of FIG. 12 provides for a large number of connections to the P+ region, with all of the P+ region connections being connected to one another so as to provide a single common potential to the P+ region throughout its area.
The outside edge 165,265 in FIGS. 11 and 12 may be defined by a silicon island etch.
Although the devices described above may be made in complementary type materials, with the thin single crystal silicon layer being doped P-, the source and drain regions being P+, and the regions defining the bifurcated channel or channels being N+ materials, the configuration described and shown in the drawings is preferred because of the higher sensitivity of N- channels to the Hall effect. Utilization of N- channels provides greater sensitivity than does a comparable P- channel because the carriers in the N- channel respond more actively to the presence of a magnetic field.
There have been described several examples of a large, nearly unlimited number of different geometrical layout variations, not as a limitation on the number of configurations available, but merely to suggest the extent and variety of the layout limitations which may be employed. Other variations may include use of two or more parallel N+ source regions instead of the single source region of the illustrated embodiments. In such an arrangement a single metal conductor would connect the several N+ source regions to one another, and, of course, a similar single conductor would connect all the P+ regions. In the described multiple stage system, a magnetic field may be measured by measuring the voltage between each adjacent pair of N+ drains to provide an average voltage difference, or a single voltage difference between the two most extreme N+ drains may be employed to measure magnetic field intensity.
There have been described methods and apparatus for providing magnetic field detection in a manner that generates strong signals at very low magnetic fields, and in an arrangement that does not require exotic materials but uses conventional CMOS or equivalent manufacturing techniques that allow the fabrication of very low power electronic circuitry readily integrated with the sensor on the same chip. The device, accordingly, is less expensive and more readily reproducible.
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|Title not available
|Arnett et al., "Two-Drain FET Magnetic Field Sensor," IBM Technical Disclosure Bulletin, vol. 13, No. 12, May 1971 p. 3633.
|Arnett et al., Two Drain FET Magnetic Field Sensor, IBM Technical Disclosure Bulletin, vol. 13, No. 12, May 1971 p. 3633.
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|U.S. Classification
|International Classification
|Cooperative Classification
|European Classification
|May 8, 1995
Owner name: HUGHES AIRCRAFT COMPANY, CALIFORNIA
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:FARB, JOSEPH E.;REEL/FRAME:007538/0001
Effective date: 19950322
|Dec 13, 1999
|Fee payment
Year of fee payment: 4
|Nov 26, 2003
|Fee payment
Year of fee payment: 8
|Dec 21, 2004
Owner name: HE HOLDINGS, INC., A DELAWARE CORP., CALIFORNIA
Free format text: CHANGE OF NAME;ASSIGNOR:HUGHES AIRCRAFT COMPANY, A CORPORATION OF THE STATE OF DELAWARE;REEL/FRAME:016087/0541
Effective date: 19971217
Owner name: RAYTHEON COMPANY, MASSACHUSETTS
Free format text: MERGER;ASSIGNOR:HE HOLDINGS, INC. DBA HUGHES ELECTRONICS;REEL/FRAME:016116/0506
Effective date: 19971217
|Nov 28, 2007
|Fee payment
Year of fee payment: 12

subset: commoncrawl


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Great Staff at Bellair
I had a consultation and treatment for laser hair removal yesterday. I went in with a list of questions as I have never had this treatment before. Catia performed my consultation. She was very informative and really put my nerves at ease. I feel I got lucky finding this place. I started my treatment and the technician was equally knowledgable and talked me through every step of the way. I am quite happy with the service so far.


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On Sale
This contemporary light fixture can be used as a ceiling light or wall sconce and is a great way to add harmony and unity to an entryway, kitchen, dining room, hallway, or bathroom. Featuring a chrome frame with a woven ring pattern, this design has eight lights covered in a delicate frosted glass, illuminated with eight halogen bulbs. Stunning and sleek. From the Possini Euro Design Lighting Collection.
Possini Euro's line of contemporary lighting has been designed to complement the modern interior. The look is clean and uncomplicated with eye-catching, geometric lines. Possini Euro lighting spans across almost every category including bathroom lighting, chandeliers, close-to-ceiling lighting, desk lamps, pendants, sconces, and table lamps. These textured compositions include optic glass and shimmering, reflective surfaces. Versatile yet sophisticated, Possini Euro lighting is a wonderful selection for today's home. Check out our selection of Possini Euro lighting today!
I love this light fixture. I had it installed in my master bath. It is beautiful. I had cycled through several other lights and didn't like any of them. This one is perfect. It dims nicely and brightens to a perfect light for applying makeup and contact lenses.
I have just ordered a second one that I will have installed in my new sunroom when it is completed.
Our team has over 100 years combined experience with contemporary lighting.
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text:
Chicken Monterey
|Chicken breasts
|3 Medium, each cut into half
|To Taste
|Salad oil
|2 Tablespoon
|Green onion
|1 Medium, chopped
|All purpose flour
|3 Tablespoon
|2 Cup (32 tbs)
|1 Cup (16 tbs)
|3 Tablespoon
|1⁄2 Teaspoon, crushed
|Bouillon cube
|1 (Or Envelope, Chicken Flavor)
|Frozen artichoke hearts
|9 Ounce, thawed (1 Package)
|Frozen whole green beans
|9 Ounce, thawed (1 Package)
1. Rub chicken breasts with 3/4 teaspoon salt.
2. In 12-inch skillet over medium-high heat, in hot salad oil, cook chicken until browned on all sides. Arrange chicken in 3-quart casserole.
3. Spoon off all but 2 tablespoons drippings from skillet. In remaining hot drippings in skillet, over medium heat, cook green onion until tender, stirring occasionally. Stir in flour until blended; gradually stir in milk and water until smooth; stir in catchup, rosemary, bouillon, and 3/4 teaspoon salt; cook, stirring constantly, until sauce thickens slightly.
4. Preheat oven to 350°F. Pour sauce over chicken in casserole. Cover casserole; bake 30 minutes. Stir in artichoke hearts and green beans; bake 20 minutes longer or until chicken is fork-tender. Skim fat from sauce in casserole.
Recipe Summary
Rate It
Nutrition Rank
Nutrition Facts
Serving size: Complete recipe
Calories 1295 Calories from Fat 445
% Daily Value*
Total Fat 50 g77%
Saturated Fat 11.3 g56.3%
Trans Fat 0.6 g
Cholesterol 247.3 mg82.4%
Sodium 3440.8 mg143.4%
Total Carbohydrates 99 g32.9%
Dietary Fiber 10.2 g40.8%
Sugars 43.5 g
Protein 109 g217.6%
Vitamin A 34% Vitamin C 38%
Calcium 62.2% Iron 41.4%
*Based on a 2000 Calorie diet


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Rahmahyah Hotel
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Journey from Khon Kaen to Hua Hin
... next train from Bangkok to Hua Hin with no interpreter around to help this time. He did get the correct location and departure time, but unfortunately he was unable to get them to sell him seats in the air conditioned rail car! This leg of the journey to Hua Hin is 4.5 hours, and by the time we arrived at the Hua Hin station it was 41 degrees outside. Let's just say.... that train ride was the longest trip of my life!......We went through various stages ...
Beach walk
... it is back to town for dinner, more delicious seafood, and a look around the markets which are now open for business. But this is a bit disappointing on the shopping front, for instance on a stall with a big sign saying get your memories of Hua Hin here, we find squeaky rubber chickens and a Colonel Gadaffi mask for sale among other similar treasures.
As predicted we sleep very well after a very good if not so lazy day ...
Nov 29
Well, it's about 1030PM. We intended to turn in at a decent hour so as to take a walk early tomorrow, but I don't seem to be sleeping. Another lazy day today, reading and laundry. Early evening we drove out to a beach. Nancy and Ja got a massage for 90 minutes while Al and I drank beer and talked. Beer is served in large bottles, accompanied by a bucket of ice cubes. Between the ice and beer "condoms", the stuff stays a refreshingly cool ...
Hua Hin - week2
Enjoying the first week in HuaHin, I decided to stay on for another week, making this the longest I've stayed in one place for 9weeks! With its quieter atmosphere, nice beaches, sea-side restaurants and more Thais than other tourist locations, it is a nice place to relax. As Colin was also staying longer we rented the apartment for another few nights. We continued ...
Rat on a stick!
... bed with gowns, loads of toiletries, nail care kits, thai pyjamas! really nice drinks in the room and plasma tv with free DVDs and the breakfast is included, and it really is out of this world.. There must be like 10 different kinds of bread, local jams, 20 kinds of fresh fruit, croissants, American breakfasts and unusual juices to choose from. It has an infinity edge pool and swim up bar. �So with a return flight to Bangkok costing around �450 a to week at ...


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Lot 31: Very Finely Decorated Satsuma Bowl
Antiques, Fine Art and Fine Chinese Collectibles Auction
by Kavanagh Auctions
20 October 2016
Montreal, QC, CanadaLive Auction
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Description: Very Finely Decorated Satsuma Bowl
Dimensions: 3.25"h x 4"w
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Defense Department CIO Teri Takai said on Feb. 20 that the Pentagon will look to replace legacy systems with more "militarily effective" technologies.
The Defense Department has outlined plans for a new approach to military use of electromagnetic spectrum, an increasingly precious resource subject to tug-of-war with the commercial world.
DOD officials described a strategy that will serve as the initial push to become more efficient in the use of spectrum while collaborating with industry to strike a balance between national security and economic interests competing for bandwidth.
"The release of the strategy is the first step," DOD CIO Teri Takai said in a Pentagon press briefing held Feb. 20, the day the strategy was issued. "It will be updated periodically to reflect lessons learned, the changing spectrum environment and our changing needs. This kicks off a multi-year effort to align existing processes and spur decisions over the future of key systems."
In the near term, Pentagon leaders will spend the next six months developing an implementation plan with a governance structure, roadmap and action plan that includes timelines and details for moving forward, Takai said. In the long term, DOD will look to replace legacy systems with more "militarily effective" and efficient technologies.
Officials in the press briefing said that it is too early to put a dollar figure on the strategy, which will unfold in coordination with other government agencies – chiefly the Federal Communications Commission and the National Telecommunications and Information Administration.
"If you look at where we are today, the objective is to be more proactive than reactive, to be followed with an implementation plan to build out" within the services, said Maj. Gen. Robert Wheeler, DOD deputy CIO for control, communications and computers and information infrastructure. "There are areas where we will save [and] others where will spend -- we have to work that out [from an] investment perspective."
The strategy comes as the military and the private sector vie for a limited amount of bandwidth. An increasing consumer demand for fast mobile capabilities, combined with growing requirements from troops in the theater, digital training and electronic warfare, means that the government needs a new way forward.
"These competing requirements for finite spectrum resources have changed the spectrum landscape, nationally and internationally, for the foreseeable future," the strategy states. "The demand for more and timely information at every echelon is driving an increase in DOD's need for spectrum. Increasingly lower echelons, including individual soldiers, require situational awareness information resulting in more spectrum-enabled network links. The growth in the complexity of modern military systems has similarly led to an increase in spectrum requirements."
Spectrum also is becoming more of a factor in DOD acquisition, the officials noted, as technologies evolve and inherently require more bandwidth. Takai pointed out that in five years, the spectrum picture will look significantly different than now.
"It's not a question how to utilize DOD's spectrum, but what are the opportunities to take advantage of spectrum currently owned and operated by industry, leveraging commercial technologies," she said. "Because of our long lead times ... it's important that we have a strategy that is thinking long-term. We cannot shift in a short-term frame -– we just have too much equipment and too much capability that has to be transitioned in a very thoughtful way so as not to impose a major burden on budgets and on taxpayers."
About the Author
Amber Corrin is a former staff writer for FCW and Defense Systems.
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The Department of Commerce is revising its confidentiality agreement for statistical data survey respondents to reflect the fact that the Department of Homeland Security could see some of that data if it is captured by the Einstein system.
In a Feb. 17 memo, Defense Secretary Jim Mattis told senior leadership to establish teams to look for duplication across the armed services in business operations, including in IT and cybersecurity.
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So taken is he with Mr Forsyth's The Price is Right show that he wants to model part of October's Tory party conference on it. He plans to parade, contestant-style, his new MEPs and councillors before delegates, prior to inviting them - in Bruce Forsyth's bonhomie-brimming catchphrase - to "come on down" to the podium.
He believes the game-show format will draw attention to the rising stars in his party and present the public with a fresh set of Tory personalities. Young candidates who won seats at the European elections, such as Theresa Villiers and Daniel Hannan, are to get the full "celeb" treatment, to emphasise the party's recent election victories.
However, the plan is causing some dismay among staff at Conservative Central Office, who fear that it could be perceived as tacky. "They will be offering us toasters next if we win a seat," commented one party member, who prefers to remain anonymous.
Mr Forsyth famously likes all contestants to be a winner and Mr Hague believes his idea will convince voters that the Conservatives are a winning party. Indeed "winning" is to be a key theme of the conference.
Delegates will be encouraged to applaud and cheer as the "winners" come down to the podium. They may be personally greeted by Mr Hague, exactly as Mr Forsyth does on television.
But some party insiders fear that the move will prove another costly embarrassment, like Ffion Hague's diamante pound-sign necklace or the purchase of a kitchen table for the shadow cabinet to sit around.
A number of Euro MPs are already warning that they would rather attend a meeting of the European Parliament than be press-ganged into "coming on down". Figures such as Lord Bethell, the veteran Tory MEP who regained a seat for the Conservatives in June, could look a trifle out of place in a game-show style format.
But Mr Hague may have to order some of his young stars to return from Strasbourg so that he can show them off.
"The party conference coincides with a Strasbourg session and it could be that we are finally endorsing the new European Commission then," said James Elles, Tory MEP. "This could be a very important meeting for the Conservative group."
Although immortalised by Mr Forsyth, the catchphrase "come on down" was in fact coined by the former host of The Price is Right, Leslie Crowther. He used it to summon members of the audience from their seats and invite them to play for a string of prizes.
Mr Forsyth, who is rumoured to earn in excess of pounds 1m for the show, has through the years been assisted by young, attractive hostesses, of whom the best known is probably Emma Noble, now the wife of James Major, son of former Tory Prime Minister John Major.
It is not yet known if Ffion Hague will play Emma to her husband's Bruce.
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Bradford schools recognized students for their achievement on the 2011-12 ISAT test at a school assembly Jan. 9. Gold medal winners include (front row, from left) Brianna Endress, Cauge Rebmann, Tucker Hartz, Ryan Murphy, Chase Stahl and McKenzie Stahl; (second row) Maysen Gullett, Maggie Dries, Jacob Bickett, Whitney Schupp, Zayne Anderson and Alex Guelde; (back row) Dalton Hancher, Kendra Selby, Faith Moody, Elexie Barks, McKenzie Coleman and Jordan Holmberg. Not pictured are Carl Dabbs and current freshman Joel Stahl and Emily Wall.
Bradford schools announce ISAT gold winners
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Where a plaintiff landowner brought suit to determine the location of the common boundary between his lot and that of the defendants, the boundary line identified by the plaintiff's surveyor is the correct one.Read More »
Real property – Tax taking – Redemption
Where three intervening defendants have offered to redeem property taken by the town of Lancaster for nonpayment of taxes, ambiguities relating to the ownership of the parcel mean that summary judgment cannot be entered.Read More »
Real property – Easement by estoppel
Where plaintiffs have opposed a defendant's proposal to build wooden stairs over a cliff for beach access at the end of Horton Lane in Vineyard Haven, summary judgment should be granted to the defendant based on her easement by estoppel.
Tagged with: Easement by estoppelRead More »
Zoning – Building permit
Where the Brewster zoning board voted to uphold a building permit, the recipient's parcel is grandfathered under the town's bylaw, so the board's decision was valid.Read More »
Real property – Tenancy in common
Where a plaintiff has requested a judgment declaring her to be the sole owner of a house, she must be denied relief based on the fact that the nieces and nephews of a decedent who owned a one-third tenancy-in-common interest in the house have inherited that interest.Read More »
Real property – Prescriptive easement
Where plaintiffs have claimed an easement by prescription for the purpose of accessing and parking in the rear yard of their property, the evidence does not suffice to satisfy the continuity requirement.
Tagged with: Prescriptive easementRead More »
Zoning – Tennis club – Preexisting nonconforming use
Where the Holliston planning board denied the plaintiff's application for grant of site plan approval and special permit for an air-supported 'bubble' structure that would provide tennis court access year-round for the members of the plaintiff's existing business (Chamberlain Pine Swim & Tennis Club), the plaintiff's challenge to the board's decision must fail under Mendes v. Board of Appeals of Barnstable, 28 Mass. App. Ct. 527 (1990).Read More »
Mortgages – Assignment – Foreclosure sale
Where a complaint has been filed to determine the validity of a foreclosure sale, the sale was invalid in that the foreclosing party has not been shown to have had title to the mortgage at the time it commenced the foreclosure proceedings.
Tagged with: Assignment Foreclosure saleRead More »
Zoning – Grandfather status – Land swap
Where plaintiffs have challenged the Wellfleet zoning board's decision to issue a building permit to the defendant abutters, the board reasonably interpreted the town's zoning bylaw in finding the defendants' lot to be grandfathered.Read More »
Zoning – Variance – Uniqueness
Where the Douglas zoning board denied a plaintiff's application for a variance to construct a single-family house, the board's finding that the property is not unique in soil condition, shape or topography is supported by the evidence.
Tagged with: VarianceRead More »


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Excellent hotel for solo travelers. Great location. Awesome vibe. Popular among solo travelers.
Guest Review Highlights
- Great location
- Accessible parking
- Room is all right
- Bathroom could be optimized
- Rooms need regular maintenance
- Great amenities
- Nice building
- Tasty breakfast
- Awesome vibe
- Modern Hotel


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This site is devoted to Technical Information and Sales Contacts/Information regarding the products of ISOPur Fluid Technologies Inc. in the USA [http://isopur.com/]. The emphasis of our site is on Varnish/Sludge Removal in Lubricating Oils and General Lubricant Purification equipment and practices.
ISOPur SE Asia Co., Ltd., is based in Nongprue, Chonburi, Thailand.
GE Frame 7FA with Group II Basestock oil after using ISOPur MR.
Let your oil act as the cleaning medium for the inner surfaces of your equipment.
You can reach us at the Contact page. We are looking forward to hearing from you. You can also contact us at our e-mail address: firstname.lastname@example.com
We would be pleased to hear from you! Please let us know what your needs and questions are, we will be more than happy to help.
In brief, you should know the following about us: our branch office was established in 2005 and we have been responsible for providing outstanding Varnish and Sludge Removal & Consulting Services ever since. Our specialty is in the area of Power Plant Lubricant Contamination and Purification. Our business is based in Bangkok Thailand, serving the entire S.E. Asia region.
We pride ourselves in standing behind our products and keeping them operationally-ready and providing Training and After Sales Service.


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Salt Lake Sites: Lawyers
I am subdividing the Salt Lake legal subdirectory. The legal category lists local legal resources. This subdirectory lists Salt Lake Lawyers. If you are looking for a Salt Lake City lawyer, you might also try LegalMatch.com, which is a national service that matches clients and lawyers.
- Legal Match (*)
LegalMatch is a national site that can help match clients and local attorneys. To find a lawyer, you fill out a questionaire and get a list of lawyers with the expertise you need.
- Law Office of David S. Kottler (www.kottlerlawoffice.com)
If you have been injured in motor vehicle, skiing, or snowboarding accident, you need experienced, aggressive representation. Call me at 888.8.SKI.LAW for a free case evaluation.
- Utah Personal Injury Lawyers (www.craigswapp.com) - review
Salt Lake City, Utah lawyers Craig Swapp & Associates help accident victims get a full and fair recovery when they've been injured in an accident. Our knowledgeable and dedicated attorneys and staff live by our motto, "One Call for Justice."
- Utah Legal Clinic (www.utahlegalclinic.com)
Brian M. Barnard, Esq. offers legal services and consultations. The site includes information on do-it-your-self divorces, noncontested divorces and contested divorces.
- Daniel L. Day, Construction Law Attorney (www.constructionsitelaw.com)
Daniel L. Day is a commercial litigation attorney serving the construction and real estate industries in Salt Lake City and surrounding areas.
- Coulter Law Group (dac-law.com)
The Coulter Law Group is an established law firm in Draper, Utah that provides a broad range of quality, cost effective legal services to clients throughout Utah and the West.
- The Advocates Injury Attorneys (www.utahadvocates.com)
The Advocates (Driggs Bills & Day PC) is a personal injury law firm based out of Salt Lake City that are dedicated to getting their clients a fair and proper settlement.
- Kipp and Christian (kippandchristian.com)
Kipp and Christian is a Salt Lake City trial firm with the experience and knowledge to carry a legal challenge from end to end,
- Clyde Snow (www.clydesnow.com)
For more than fifty years, the professionals at Clyde Snow & Sessions have been serving clients throughout Utah and the Intermountain West in a variety of legal disciplines.
- Babcock Scott & Babcock (babcockscott.com) - review
Babcock Scott and Babcock specializes in the legal needs of the construction industry.
- Smoland Law (smolandlaw.com)
The firm of Dain Smoland is a criminal law firm focus on defense for Drug Crimes such as Marijuana Possession and Drug Paraphernalia; Traffic Crimes; Alcohol Crimes such as DUI and Minor in Possession; Theft and Shoplifting.
- Gregory W Stevens (www.gwslaw.com)
Attorney / Lawyer In Salt Lake City, Utah, Area For Civil & Criminal Litigation & Employment Law.
- Jones Waldo (www.joneswaldo.com)
Jones Waldo is one of Utah's oldest and largest law firms tracing its roots to 1875 when the firm was founded by Utah's U.S. Senator, Joseph L. Rawlins.
- PBL Utah (www.pblutah.com)
Parsons Behle & Latimer was founded in 1882 and is one of the oldest and best known law firms in the intermountain region.
- CRS Law (www.crslaw.com)
Cohne, Rappaport & Segal, P.C. is a law firm large enough to handle major transactions and litigation matters, yet small enough to provide personal service to its clients.
- Robert J. DeBry & Associates (www.robertdebry.com)
Utahs Large firm for accidents and injuries and still the friendliest.
- Bertch-Robson Attorneys at Law (www.bertchrobson.com)
Personaly injury cases.
- Snell & Wilmer (www.swlaw.com)
[Gateway Tower West] Presently, more than 40 attorneys make up one of the largest full-service law firms in Utah.
- Shoaf and Associates Inc. (www.shoaflnc.com)
Legal Nurse Consultants - A Legal Nurse Consultant is a collaborator and strategist offering the attorney informed, professional opinions on the delivery of healthcare and its resulting outcomes.
- The Law Offices of Randal L. Meek PC (www.rlmlaw.com)
- Stoel Rives - City Profiles (www.stoel.com)
Stoel Rives has a 100-year tradition as a leading law firm in the West.
- Ballard Spahr Andrews and Ingersoll (www.ballardspahr.com)
Helps navigate companies through the legal landscape.
- Bugden & Isaacson, L.L.C., (bilaw.net)
Experienced criminal defense lawyer.
- G. Eric Nielson and Associates (www.ericnielson.com)
Salt Lake Attorney at Law with experience in medical malpractice litigation.
- Christensen & Jensen - Utah Law Firm (www.chrisjen.com)
For more than 50 years, Christensen & Jensen has engaged in the practice of law throughout the State of Utah.
- DUI Hotline (utahduihotline.com)
Attorney offering services for DUI and DWI cases.
- Robert B. Sykes and Associates (www.sykesinjurylaw.com)
A personal injury law firm serving Salt Lake, Provo, Ogden and Logan.
- Bostwick and Price (www.bostwickprice.com)
Bostwick and Price is a Utah Law firm offering services in construction law and real estate law.
- Stone and Law (www.haroldstoneattorney.com)
Stone and Law is a law firm specializing in criminal defense.
- Attorney Ryan Springer (www.ryanspringer.com)
Site has information on local attorney Ryan Springer
- Steck Law, PLLC (www.stecklaw.com)
Steck Law of Sandy specializes in business law and firearm law.
- Johnson Mark LLC (jmlaw.pro)
Johnson Mark is a law firm engaged in the practice of civil litigation focusing on debt collection and creditor rights.
- Stowell & Crayk (stowellandcrayk.com)
Stowell & Crayk, PLLC is a premier small law firm in Salt Lake City with practice areas in immigration, criminal defense, construction/mechanic's lien law, real estate, family law and general civil litigation.
- Larsen Larsen Nash and Larsen (www.larsennash.com)
A practice offers personal injury and criminal defense services.
- Ward Harper (www.wardharper.com)
Ward Harper offers services related to social security benefits.
- Wall and Wall (walllegalsolutions.com)
Wall and Wall is an experienced trial law firm offering services in divorce, child custody, personal injury, domestic violence, and accidents.
- Parr Brown Utah Law Firm (www.parrbrown.com)
Parr Brown Gee & Loveless is a leading Utah law firm providing corporate clients and individuals with transactional, litigation and regulatory assistance.
- Holland and Hart (Profile)
With a location at 222 South Main Street, Holland and Hart is a regional law firm serving clients throughout the Mountain West.
- Randal K Edwards (www.randallkedwards.com)
Located in the historic Kearns Building, The Law Offices of Randall K. Edwards offers representation in personal injury and wrongful death.
- Vannova Legal (vannovalegal.com)
We are a team of Utah attorneys and professional experts in the field of negotiation, real estate, finance and mortgage lending.
Category Hits 10015
*This is an affiliate link.
Alpha ~ Site Map ~ Add Link ~ Utah Color ~ Master Index ~ Office


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Acura RDX Repair and Maintenance Costs
A guide to repairs, service, and maintenance costs for your Acura RDX
The national average repair and maintenance cost for an Acura RDX is between $419 and $512 per year. Repair and maintenance costs vary depending on age, mileage, location and service provider.
2007 Acura RDX Location: Front
Brake Pad Replacement
$170 - $224
2007 Acura RDX
Oil and Filter Change
$27 - $60
2007 Acura RDX
Maintenance Service A
$27 - $60
2007 Acura RDX Location: Front
Brake Rotor Replacement
$456 - $604
2007 Acura RDX Service Detail: Front, One Side
ABS Wheel Speed Sensor Replacement
$94 - $141
Never overpay. Check prices with our estimator
Ask a mechanic in our community
Our experts translate recalls into plain English
Acura RDX ProblemsEngine Leaking Oil
The 2007-2012 Acura RDX engine oil pressure sensor is known to leak engine oil from normal operation.
More information about the oil pressure sensor here.
To correct the leak, the sensor must be inspected, properly sealed and installed, or replaced with new.
Acura has issued a recall on a small number of these vehicles because the tow hitch was not welded properly and could break off. (Campaign Number: 06E096000)
Acura RDX QuestionsRecently, My RDX' 13 is asking for tire pressure verification. They have N2. Why (1 answer)
Hi all, I'm a RDX '13 owner.
since the vehicle stars moving, the tire pressure increases about 1 or 2 PSIs; 3 out of 4 tires are showing the problem. But then, after some rest period, the tire pressure decreases again. Is that technically possible? What should be wrong?... I'm afraid...
I'd prefer the option of using a less expensive repair shop, although I'd like to be sure they're well qualified
Acura RDX RecallsDriver's Frontal Air Bag Inflator Ruptures And Sprays Metal Fragments
The driver's frontal air bag inflator may be susceptible to moisture intrusion, which over time could cause the inflator to rupture. If this happens, it would spray metal fragments upon deployment. Dealers will replace the driver's frontal air bag inflator free of charge to resolve the concern.
The shift interlock system is designed to prevent the shifter from being moved out of the park position unless the brake pedal is depressed. These vehicles are being recalled because during sub-freezing temperatures, the interlock mechanism may be slow to operate. The could allow the shifter to be moved from the park position when it should not be allowed to do so. As a result the vehicle could roll unexpectedly, increasing the risk of a crash. Dealers will install an updated shift interlocking mechanism to correct this concern.
The inappropriate certification label may be present at the driver's door jam area. This will provide improper tire and wheel information. Dealers will remove the incorrect label and install the proper label. The Acura recall number is Q54. This recall began on August 20, 2007.


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Product DescriptionSingle-breasted, two-button, cotton blazer with narrow notch lapels, the Sorcha is a contemporary take on a quintessential menswear classic. Peter Werth`s version is delivered with patch pockets, a welted ticket pocket and double chest pocket for a smart relaxed look.
- Blazer
- Without Hood
- Button
- 4 Pockets
- Not Waterproof
- Professional Laundering Recommended
- 100% Cotton
- Cotton
- Dry Clean Only
- Warm Iron
- 4 Internal Pockets
- Water resistant Not waterproof
Care Instructions
- Care Instructions: Professional launder recommended
Buy & Collect - FREE for orders over £30 or £2 for under £30 (7 days a week)
Order before Midnight for collection in store from 12noon the NEXT DAY or on a day of your choice
(For Belfast and Dundrum please allow up to 48hrs for delivery.
Standard - £3.95 (Monday to Friday)
FREE on orders of £50 or more. Delivery within 3 - 5 working days.
Next Day - £6 (Monday to Sunday)
Order before 7pm for delivery the NEXT DAY
Collect+ - £3.50 Order before 7pm for collection from a local store
Nominated Day - £6 (Monday to Sunday)
Same Evening - £8 (Monday to Friday)
Selected postcodes only. Order by 12noon for delivery between 6-9pm.
Ireland - £3.95
FREE on orders of £50 or more*. Delivery within 3 - 5 working days.
International - £6-£20
To over 150 countries, within 3 - 10 working days.
Please be aware that some international deliveries may incur local import taxes.
We hope you will love your new things but if you don't, you are welcome to return your items free of charge. Here's how to do it:
To a Store
Bring your items and proof of purchase into store within 28 days from the day your parcel arrives, for a full refund via the original payment method.
By Post
Please send your return by post or courier within 28 days from the day your parcel arrives for a full refund via the original payment method.
Paypal Refunds
You will need to return your goods by post, if PayPal was your original payment method and you would like the refund back to your account. If you make your return to a store, we will only able to give you a House of Fraser gift card to the same value. You'll still have 28 days to return.
International Returns
Please note: if you return your purchase to us from outside of the UK, it will be at your own risk. We cannot accept any responsibility for items lost or damaged in transit. It is your responsibility to pay any delivery charges, duties and taxes incurred to return your purchase.


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Shop Now
Get directly in touch with Odesi. Dutch Design Online
Request prices/quote
Request catalogues
Retailers list
The Hague / Netherlands
Odesi. Dutch Design Online
Lulofsstraat 55-36
2521AL The Hague | Netherlands
Tel.: +31 070 3898859
Utrecht Netherlands
Remy Meijers graduated cum laude in Interior and Furniture Design from the Utrecht School of the Arts (HKU) in 1995. After gaining experience at various agencies, he started his own bureau for interior design in 2000. Since [...]
Chairs by ODESI. DUTCH DESIGN ONLINE
Wooden chair
Chair with armrests
Fabric chair


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Patient Safety Update published16 Jan 2017
The Patient Safety Update outlining cases reported from July to September 2016 is now available on the SALG website for download. Topics highlighted in this patient safety update include: Surgical Never Events Drug Errors Safety in the MRI Suite Power Failure Airway...
NICE publishes standard on Transition from children's to adults'...23 Dec 2016
The National Institute for Health and Care Excellence has published a Quality Standard on Transition from children's to adults' services. The Royal College of Anaesthetists and the Association of Paediatric Anaesthetists of Great Britain and Ireland support this quality...
Guidance for the Provision of Anaesthetic Services 2017 consultation22 Dec 2016
The Royal College of Anaesthetists has produced draft chapters of the Guidance for the Provision of Anaesthetic Services (GPAS) 2017 for consultation. The consultation is open from 22 December 2016 to 22 January 2017. The following chapters have been drafted using the College's...
Applications to join Q are now open08 Nov 2016
The Q initiative, a programme led by the Health Foundation and supported and co-funded by NHS Improvement, is inviting applications from those working in the North East and North Cumbria, the South West and the West of England as part of its objective to connect people with...
RCoA supports Choosing Wisely campaign24 Oct 2016
The Academy of Medical Royal Colleges, supported by the Royal College of Anaesthetists (RCoA), has today launched the Choosing Wisely campaign across the UK. Choosing Wisely is aimed at encouraging patients and doctors to discuss the risks and benefits of available treatments...
A Royal Occasion06 Oct 2016
The Safe Anaesthesia Liaison Group is delighted to announce that HRH The Princess Royal, the Patron of the Royal College of Anaesthetists, will be attending our annual Patient Safety Conference in Edinburgh in November. Dr Liam Brennan, President of the Royal College of...
Safeguarding children in theatre – a new resource for anaesthetists29 Sep 2016
All healthcare professionals have a responsibility to ensure the safety of children under their care and to act if they have any safeguarding (child protection) concerns. Safeguarding children is a complex area of practice and one that those who work outside of paediatrics find...
RCoA consultation response on long-term sustainability of the NHS27 Sep 2016
The RCoA has welcomed the opportunity to respond to the House of Lords select committee inquiry on the long-term sustainability of the NHS, which aims to explore what the future of the NHS will look like. Within this response, the College highlights the need for increased NHS...
Managing the Difficult Airway22 Aug 2016
The NAP4 report published by the Royal College of Anaesthetists (RCoA) and the Difficult Airway Society (DAS) included more than 160 recommendations to make airway management during anaesthesia, in intensive care and in emergency departments safer. It is hoped that many...
Safety Notice: Air embolism following CVC port being left open09 Aug 2016
NHS Improvement have been alerted via the coroner's court to an incident where a patient died following a clamp on a central venous catheter port being briefly left open, resulting in air embolisation and cerebral infarction. The coroner was particularly concerned that: nursing...
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text:
© Copyright 2017 Kirkyb. All rights reserved.
Status: Finished
Genre: Young Adult
lol he sounds like a flirt, a yummy flirt; but still a flirt.
christine look at with the evil grin rubbing her hands. You are plotting again.
haha i love the cousin relationship thing. it makes me miss my cuz.:)
hahahha I LOVE IT KIRST :P :P :P..
im likeing Xander :)
They need to just tell everyone they are related
Patty this is from the last chapter in case you didnt see it:
almost dead is what your trying to say :p haha jkjk
they will soon Patty
Still not working out yet Chris???
I am beginning to see a pattern with you Chris.
Kirst, have you checked out my first chapter?? .
i just want to kow. if its worth updateing :P
i got two comment already (both positive)
i need one more to convince me :P
I'll take that as you are all okay :)
I did twice but it wouldn't let me leave a comment it kept booting me out i'm sorry i meant to say i love it and want to se where it goes hang on i'll go try again
Book / Romance
Book / Romance
Book / Romance
Paste the link to picture in the entry below:
Paste the link to Youtube video in the following entry:
Cannot annotate a non-flat selection. Make sure your selection starts and ends within the same node.
An annotation cannot contain another annotation.
There was an error uploading your file.


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Looking for Full Time guy to do manual SEO
This project was successfully completed by searchsouth for $1333 USD in 90 days.Get free quotes for a project like this
Project Budget$750 - $1500 USD
Completed In90 days
Total Bids39
Project Description
We are looking for a person to do a manual linking for our website ([url removed, login to view]) Also we need strategies and advices. Possible to get raise if you bring good results. Website has been penalized by google 3 months ago, since then we had a guy to do manual SEO, but wasnt good enough. And I m looking for a guys that will tell me what he will do and what will happen, not a guy who says we should do.
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- Forbes
- The New York Times
- Time
- Wall Street Journal
- Times Online


text:
TIM wrote:tingjunkie wrote:TIM wrote:If you heat up good soy sauce to almost a boil and pour into a good pre-heated hagi bowl. You will see the C&F too. Soy Qi
You jest, but I had a soy and ginger marinated Spam Musubi today which made me food drunk. Big time sleepy Qi.
MSG qi bro
Nah, it's that Itis Qi!


text:
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This robe is heaven on earth. A fully reversible robe with silk on one side and the softest mini-terry on the other. Wear the terry side and you'll feel like you're wrapped in the finest Egyptian cotton towel. Wear the silk side and you may never take this robe off. And, don't worry, we looked after all the details, shawl collar, cuffs and pockets on both sides! In beautiful lustrous colors that you can only get with silk!
Click here for the short length Il Cieli Spa Wrap
Item #: 22062
Measurement: Length: 52"
Content: Side 1: 100% Silk Side 2: 80% cotton 20% polyester
Care: Hand wash. Mild detergent. Warm water. Dry flat. Or dry clean.
Fit: Generous.
Recommended for You
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text:
Top Teachers: Jill Morris
Pemeberton E.S., first grade
On her first day as a teacher, Jill Morris stood outside her classroom door, greeting children with a wide smile as they came down the hallway. One little girl stopped, looked up at Morris, then looked down. . . and threw up on Morris' shoes.
It was an inauspicious start, to be sure, but it didn't faze the young teacher.
"The nurturing side of me kicked in quickly, and I picked her up and didn't really care about the mess on my feet," she recalled.
The years since that day in Fairfax County have been smoother sailing, and Morris has distinguished herself as a caring, thoughtful teacher during her seven years at Henrico's Pemberton Elementary, where she teaches first grade.
"No matter who I have in my classroom, I want them to feel loved and valued and know that there is someone in their corner," she said. "No matter who walks through my door, I'm their champion."
First-graders bring Morris much joy because of their wide-eyed love of school and of learning. Her students are excited about using computers, taking pictures and recording their voices for presentations.
"When a group of students smile, that means a lot," Morris said.
Parents, including one who nominated Morris, have noticed her efforts.
"She goes out of her way to check on her past students to make sure they are still on the path to success," one nominator wrote. "Jill volunteers her time to help with the school plays and musicals. This takes a huge amount of her personal time, but she is there to support the children and make them the best they can be."
Morris has been in charge of the backstage crew for the school's musical, which are produced every other year.
"You get an opportunity to see a student shine when maybe they wouldn't in the classroom," she said.
She experienced that firsthand several years ago when she convinced one student to participate in that year's musical, even though he wasn't sure he was talented enough. His enthusiasm for the role was evident throughout, though, and his mother told Morris how thankful she was for the teacher's encouragement.
"He stood there beaming as his mother told me that," Morris recalled. "He was so proud."
A few weeks later, the boy's mother died. He moved out of state to live with his aunt, who wrote Morris a letter explaining how much the experience – and the lasting memory of his mother's pride – meant to the boy. The next year, the boy came back to visit and gave Morris a big hug.
"Those are the touching moments that you will never forget as a teacher," she said.
Villa's Flagler Housing wins national NAEH award
St. Joseph's Villa's Flagler Housing & Homeless Services was one of three entities to earn the National Alliance to End Homelessness' Champion of Change Award. The awards were presented Nov. 17 during a ceremony at the Newseum in Washington, D.C.
NAEH annually recognizes proven programs and significant achievements in ending child and family homelessness.
Flagler completed its transition from an on-campus shelter to the community-based model of rapid rehousing in 2013, and it was one of the nation's first rapid re-housing service providers to be certified by NAEH. > Read more.
RIR's Christmas tree lighting rescheduled for Dec. 12
Richmond International Raceway's 13th annual Community Christmas tree lighting has been rescheduled from Dec. 6 to Monday, Dec. 12, at 6:30 p.m., due to inclement weather expected on the original date.
Entertainment Dec. 12 will be provided by the Laburnum Elementary School choir and the Henrico High School Mighty Marching Warriors band. Tree decorations crafted by students from Laburnum Elementary School and L. Douglas Wilder Middle School will be on display. Hot chocolate and cookies will be supplied by the Henrico High School football boosters. > Read more.
Restaurant Watch
Find out how your favorite dining establishments fared during their most recent inspections by the Virginia Department of Health. > Read more.
All bills targeting student debt fail this session
Bill lets women get 1 year of birth control pills
Assembly OKs amendment to help surviving spouses of disabled vets
Over Democrats' objections, Senate OKs 'religious freedom' bill
- More News
Print Edition
Feb. 16, 2017Click here to read the print edition.
Restaurant Watch
Weekend Top 10
American Tap Room at Willow Lawn closes
Weekend Top 10
Cast announced for 'Jeeves Intervenes' at CAT Theatre
- More Entertainment
Obituary – Anne Faudree Barker
Obituary – Jonathan "Bryan" Lawler
Obituary – Jean Harless
- More Obituaries
Villa's Flagler Housing wins national NAEH award
RIR's Christmas tree lighting rescheduled for Dec. 12
project:HOMES' 'Renew Crew' helps Henrico citizen
- More Community
Thanksgiving, Part II
Storm woes for e-junkies
'Good old days' were good – for some
- More Opinions
RIR to admit children 12 and younger free next year
Henrico teams win district, state championships
Varina HS to host Basketball Skill Development Academy June 20-23
- More Sports
|February 2017
Place an Ad | More Classifieds
CalendarHenrico Recreation and Parks will host a summer job fair from 8 a.m. to 1 p.m. at the Eastern Henrico Recreation Center, 1440 N. Laburnum Ave. Positions include groundskeepers, tradesmen, landscapers, special event support, and custodial support. Applicants must be at least 18 years old. Apply at the event or online at http://www.henricojobs.com (IRC83552). Same day interviews available with the potential for conditional job offers. Full text


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Game Informer and Gamereactor Magazines Coming to the UK
Written Friday, February 08, 2013 By Lee BradleyView author's profile
Game Informer and Gamereactor magazine are coming to the UK.
Game Informer will begin selling digital subscriptions to UK gamers via its GameStop UK website. Gamereactor, meanwhile, will launch digital and physical magazines, with the latter given away on the High Street and universities.
Game Informer has built a reputation for working closely with developers and publishers to announce new games, enjoying a massive readership of 8.1 million ,helped along by distribution via GameStop stores. The mag's move into the UK will only strengthen that position.
UK subscriptions to Game Informer at Gamestop.co.uk are already live, and cheap too, at just under £15.
"For more than 22 years, Game Informer has grown to meet the demand of an ever-widening group of readers," Game Informer publisher Rob Borm said. "The launch of our monthly digital magazine in the UK and other regions outside the US is a natural progression for Game Informer, and we are excited to serve this wider global audience."
Gamereactor, meanwhile, is one of Europe's biggest games publications. It is distributed for free in Denmark, Sweden, Finland, Norway and Germany, with a combined readership of over 300,000. It launches in the UK this month with a print run of 80,000 copies.
You'll be able to pick it up for free from major retailers, independent shops, and some universities and colleges, on a "nearly monthly" basis. Eight copies will hit per year.
[via MCV]