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To tell them to find their own way to the airport in a foreign country
(591 Posts)First of all, sorry, long story and first world problem.
DH, DCs and i live abroad for DH's job. We live in a rented house close to DH's work as it is not really easy for foreigners to buy property where he works. I miss England and our lovely home there, so last year DH bought me a Ski Chalet as a birthday present / thank you for leaving your family and job in England to follow me around the world, present. He insisted it was my chalet, i could decorate it how i wanted etc, do what i wanted with it.
The chalet is in a fabulous ski resort and to me it is very much our home. We spend most weekends there, we do not rent it out as a holiday chalet.
Last year MIL asked whether HSIL and her uni flat mates could visit for a weeks snowboarding holiday. I was reluctant to agree. DH's does not really know his HSis and when she has visited us in other homes she has been very messy (straightens hair over sink leaving behind lots of hair etc etc) and she never helps out at all. Reluctantly i agreed, MIL insisted her friends were nice and they would help out and babysit DCs in exchange for free board.
HSIL and her friends booked plane tickets which meant they landed late at night with no way of getting to the chalet so DH drove a 6 hour round trip to collect them from the airport.
They have been here all week and as i guessed, have been hard work. They have done nothing to help out around the house, not bothered to help with dinner or clean away afterwards, not helped with DCs or bothed to even buy me a bunch if flowers or some chocs to say thank you for having them. We all eat together but they talk amongst themselves and make little conversation.
On Wednesday DH was called back to work with a crisis, leaving DCs, myself and HSIL and her friends. Since then they have been worse, going out at night and getting drunk and returning at 2/3am and waking DCs and i with their noise. Last night things worsened. DCs and i were woken at 3am, i could hear male voices and smelt cigarette smoke. Our house is strictly non smoking, especially as we have a baby. I went into the lounge and interrupted the party. I asked the young men to stop smoking in my home and to please leave as i didn't know who they were. The young men were local lads and were very apologetic for smoking and waking us and explained they didn't know it was a private home. As they left one of HSIL's friends, under her breath, called me a snotty cow. I turned around and politely challeneged her on her comment. She repeated it and called me an old hag too (34 BTW, she is 20).
I went back to bed fuming and in tears. This morning i woke them all up at 8.00am. They are due to fly back home tonight and i assume were expecting DH or me to take them to the airport. I explained that because DH was not here and because we had had a lot of snow lately and the minibus was snowed in, they could make their own way back to the airport via public transport. I was not driving them 6 hours round trip. They had 12 hours to get back to the airport themselves. The journey is a bus and two train rides and takes a total of 3.5 / 4 hours. An hour later i heard the door bang and went to their rooms. They have left and take all their stuff. They have not said good bye. The room where the two girls were sleeping has been trashed. Make up; lipstick, foundation and other stuff has been smeared into my beautiful new White Company bed sheets. It doesn't look like an accident as it is on all the pillows, duvet and sheet.
I phoned DH at work and told him what had happened. It was a broken line and DH was v. busy at work so i know he wasn't really aware of the whole story as it was hardto talk. But he questioned whether i had checked they had money to get to the airport and whether the trains were running. I hadn't. I have checked since and the trains are running. But have i done the right thing? AIBU?
Please OP an update? Please send a photo of the sheets to your MIL to prove it wasn't an accident.
UPDATE: err, not much of an update.
DH still not back, two business trips have rolled into one, he is back on the weekend though.
Have spoken to DH in detail though and he is and about his family now. Feel quite sorry for him so have agreed to leave it all up to him to deal with as he see fit.
Bumped into the ski instructors twice since the weekend. Nice chaps.
Never mind a pic of the sheets-I´m hankering after a pic of the Chalet!!
And a pic of the ski instructors!
At bream.
I feel a bit for your dh as horrid for him.
Message withdrawn at poster's request.
espressomonkey - can I just say that HSIL must have been very poorly brought up. Her age is no excuse. She sounds a very entitled spoilt person.
I had a friend from uni who's parents had a holiday home, on the welsh coast. When we stayed, we brought all our own food and drink, there were only three of us incl friend for weekend, and afterwards cleaned and tidied the house. Leaving it as we found it. The only thing we didn't do, was our friends parents did not have a tumble drier, so we left all the bedding in laundry basket, but made the beds with fresh bedding.
We also left a bottle of wine, and hand written note for her parents, thanking them. This was a three night break. We would have left a nicer present, but we were poor students at the time.
I'm sorry for what they put you through.
Oh to be 17 again and pull the ski instructor...
Willabywallaby - glad it's not just me who thought that...
I'd love an update Expresso.
Update Espresso?
Please accept my profuse and deep apologies for typing Expresso when I should have typed Espresso.
I only offer this apology in order to 'bump' the thread.
Update OP ?
I need closure, I need to know the bad have seen the error of their ways and what the good (ski instructors) look like.
Please update, has HSIL learnt her lesson (I really doubt but you never know).
I'm afraid I need closure too, so another bump.
Saw this in active convos and got all excited about an update <<bitterly let down>>
Op don't keep us all in suspense
Espresso whats happened?! We all need want to know what happened when your DH returned... please
Bumpity bump. I still need closure lovely OP.
Oh I saw this thread get back on page one and got all hopeful for an update....
Hopeful bump!
Apologies, i have been a rather poor Mumsnetter lately. Well UPDATE! DH returned from his business trip. He was v. annoyed with HSIL and agreed she wouldn't be returning. He was somewhat defensive of MIL, but i know he knows she was wrong (incidently i am still waiting for her email with HSIL's email address).
Decided to forget the whole thing.
Then, on Monday DH came home to tell me MIL had been on the phone. She has a new boyfriend who likes to ski and thought it would be nice if we could meet him. She was hankering after an invitation to visit. So i quickly booked a weekend back in Blighty for two weeks time. We are going over there to visit them instead so there is no need for them to trek all the way over here. MIL is perhaps secretly seething, i feel very happy with the outcome. Wonder if HSIL will be at MIL's the weekend we are? Could be interesting...
Well you know what to do with MIL's sheets. Don't forget your make up bag.
Breathtaking! We can see where sil gets her free-loading gene from!
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June 24 2014
On the cover of our March 2017 issue are Destined To Be Yours stars Alden Richards and Maine Mendoza. GMA's triumph in February nationwide TV ratings, the Network's latest awards, and GMA Studio Tours photo highlights are also featured. Kapuso Abroad carries the story on Wowowin's tour in Abu Dhabi. Citizen Kapuso highlights Benjamin Alves as GMA Network Excellence Award ambassador as well as GMA's nationwide bloodletting activity. Read more
Para sa lahat ng kababaihan na ating minamahal, Happy Women's Month! Read more
Panoorin ang ilang tips kung paano makakaiwas sa sunog. Read more
GMA Network received the highest recognition among the most trusted brands in the Philippines during the 2017 Readers' Digest Trusted Brands Awards held last March 7 in Pasig City. Read more
GMA personalities Howie Severino and Benjamin Alves grace the recently concluded Polytechnic University of the Philippines' (PUP) seminar-workshop dubbed "Beyond the Screen: Rising in a Complex, Increasingly Competitive Media Industry." Read more
At the 4th Paragala Central Luzon Media Awards organized by the HAU and the Communicators' League, the Kapuso Network earned 10 awards in a ceremony held last February 18 at the Holy Angel University Theater in Pampanga. Read more
GMA Network (GMA) sustained its nationwide TV ratings dominance in February, according to data from the industry's widely-trusted ratings service provider Nielsen TV Audience Measurement. Read more
GMA Network takes majority of Philippine finalists in the highly-esteemed 2017 New York Festivals' "World's Best TV and Films" Competition, with six shortlisted entries. Read more
In celebration of the love month, GMA successfully held its annual Kapuso Bloodletting Day! Read more
GMA Network Chief Marketing Officer (CMO) Lizelle G. Maralag will once again take part in the 2017 Asia Pacific (APAC) Effie Awards as a jury member. Read more
Kapuso leading man Benjamin Alves is once again the ambassador for the GMA Network Excellence Award (GNEA). Read more
On the cover of our February 2017 issue are the lead stars of GMA's upcoming primetime series, Legally Blind. Also in this issue are new program launches in February including Destined To Be Yours, Pinulot Ka Lang Sa Lupa, Full House Tonight, and Case Solved. Kapuso Abroad features GMA Pinoy TV's event in LA, "Sikat Ka Kapuso!" while Citizen Kapuso highlights the donation from the Philippine Canadian Foundation. Read more
The search is on for this year's GMA Network Excellence Award (GNEA). Read more
Labor Arbiter Albert B. Dolosa of the National Labor Relations Commission took the side of GMA Network, Inc. in an illegal suspension case lodged against the broadcast company by its former talents. Read more
Kung Hei Fat Choi! Welcome the Year of the Fire Rooster! Read more
The Excellence Award is open to any bona fide Filipino graduating student for the school year 2016-2017 in Mass Communication, Multi-media Arts, Advertising, Electronics Communication Engineering or any equivalent course. The aspirant must be graduating with honors and active in socio-civic activities. Read more
GMA Network's ratings success continued well into the New Year with recent data from the industry's trusted ratings service provider Nielsen TV Audience Measurement showing that the Kapuso network remains number one in the country. Read more
On the cover of our January 2017 issue are the lead stars of GMA's newest primetime series, Meant to Be. Also in this issue are stories on GMA's TV ratings dominance, new program People vs. the Stars, highlights of the Network's New Year countdown, etc. Kapuso Abroad features James Wright at the Philippine Fiesta 2016 in Melbourne, Australia. Citizen Kapuso highlights GMA G.I.V.E.S.' Christmas outreach activities. Read more
Padilla filed a complaint after GMA News reporter Emil Sumangil named Padilla in the GMA News TV newscast Balitanghali as the owner of a house where P1 billion worth of liquid shabu was seized. The report was later posted on GMA News Online. Read more
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Alalahanin ang kanyang kabayanihang nagbigay daan sa Pilipinong mas maging makabayan. Read more
FLG Management and Development Corporation, the holding company of the Gozon family, and Freyfil Corporation, one of the largest construction companies in the Philippines, recently signed a joint venture agreement to develop renewable energy projects in the country. Read more

subset: commoncrawl


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High Yield Fund (HWHIX)
The performance data quoted represents past performance and does not guarantee future results. Current performance may be lower or higher. Investment return and principal value of the fund will fluctuate, and shares may be worth more or less than their original cost when redeemed. Click quarter-end or month-end to obtain the most recent fund performance. The High Yield Fund imposes a 2.00% redemption fee on shares held for 90 days or less. Performance data does not reflect the redemption fee. If it had, return would be reduced.
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Read more about the high yield strategy
Ticker | HWHIX |
Cusip | 44134R735 |
Open to New Investors | Yes |
Minimum Investment | $1,000,000 |
Inception Date | 03/31/2009 |
Gross Expense Ratio* | 0.74% |
Net Expense Ratio* | 0.70% |
Redemption Fee** | 2.00% |
Dividend Schedule | Monthly |
Capital Gains Schedule | Annual |
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Size of Class (millions) | $2,078 |
30-Day SEC Yield with expense waiver | 5.64% |
30-Day SEC Yield without expense waiver | 5.60% |
* As of 06/30/2016
**The High Yield Fund imposes a 2.00% redemption fee on shares held for 90 days or less. Performance data does not reflect the redemption fee. If it had, return would be reduced.
12.13 | 0.01 | 0.00 |
Mr. Hudoff, Mr. Kennedy, Mr. Mak and Mr. Meegan coordinate the day-to-day management of the High Yield Fund portfolio. They also represent the High Yield Fund to current and prospective shareholders.
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Remote Access Technologies for Library Collections: Tools for Library Users and Managers is crucial to understanding these changes and the new expectations that library users have in the 21st century. Identifying, implementing and updating new technologies, understanding copyright and fair use laws, creating metadata for access to digital collections, and meeting user needs are just some of the topics covered in this volume. Libraries have become the electronic information commons of the new information age and this reference provides a vital exploration of the future, which is now.


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London Road is now the main route leading out of the village past St Mary's church and Datchet House towards Colnbrook and the M4 Junction, but it is not the original main road. Horton Road was the old route to Colnbrook and into the London-Bath road, while London Road was a narrow lane leading to Riding Court and Ditton Park, known as Churchfield Lane in the 1600s. In 1768 it was upgraded and widened by the Colnbrook Turnpike Trust as a direct route to the London-Bath road, the modern A4.
No early houses were built here beyond Church Cottage and Datchet House at the foot of the road, and most of the surrounding land remained as open fields until the mid-20th century.
St Mary's Parish Church
St Mary's was almost completely rebuilt from 1857, the peak year for the building and rebuilding of churches across the country during an evangelical revival of the Church of England, due to the authorities realising that parish churches...
Datchet House
This grand Georgian house was built in the mid-1740s by the Needham family, Earls of Kilmorey in Ireland. Just north east of the church, it occupies an important site in the village which can be traced back to the 1500s. Its long garden wall bordering ...
Church Cottage, James Cottages & Horton Cottage
(Most pictures can be enlarged by clicking on them)
Just opposite St Mary's parish church is Church Cottage, one of the oldest houses in Datchet. It is remarkably little altered since its first building in about 1500 with a major ...


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from Thomas Sommer
Some jumpcuts in a winterwonderland and eating like a horse - for example the "Wiener Größenwahn" (I think the translation is "Viennese Megalomania" or something like that). The Challenge: Two big Viennese Schnitzel, French fries and salat. Mission accomplished!
Camera: GoPro Hero 3 Music: Jenny's Theme, Jason Shaw (audionautix.com/Index.html)


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Square Root Solutions (Part 2 of 2)
Lesson 8 of 16
Objective: SWBAT find and understand square root solutions to simple equations
Big Idea: Square roots are so much more common than any other root. A good grasp of the concept of square roots will facilitate understanding of subsequent lessons a great deal.
1. Hand each student a SqRt2 Entrance Slip.docx
2. Allow students to use a calculator and give them a few minutes to answer the questions. Students will find that the expressions in questions 1 and 2 are equivalent and that the the two radical expressions when multiplied result in the radicand.
3. Ask students to try other square roots, multiplying them so they can see that squaring and square roots are inverse operations.
4. Ask the class to come up with a rule for all cases. Students usually conclude with a rule (√x)(√x) = x
5. Write on the board: (√b)2 = b and (√b2 )= b and provide some examples using perfect squares so students can clearly see the pattern without have to use a calculator.
Ex: (√4)2 = (2)2 = 4
(√9)2 = (3)2 = 9
Resources (1)
Resources (1)
New Info/Application
Ask the students to narrate what happens when they take the square root of a number squared. (They usually say..."they cancel" or "you get the same answer" Yes! Squaring a number and "Square Rooting" are inverse operations, just like multiplication and division, addition and subtraction. This face can be used to simplify, evaluate expressions, and solve simple equations.
Hand out the SqRt2 ACTIVITY SHEET.docx sheet to each student. Students work well in pairs, here. Motivate students to choose a partner they don't usually work with for the sake of change. The worksheet is broken up into activities to identify moments in the class to raise important issues.
Activity 1:
Once Activity 1 is complete, make sure that students are aware that there are two answers for Question 3. Most students will have found a single answer, x = 0.8. Ask the class to identify another value for x that will also yield a result of 0.64. Students should realize that -0.8 is the other solution. If they take long just ask, "Are you just thinking of numbers greater than zero?"
At this point state that every positive number except 0 has two square roots, one positive and one negative. The square roots of x are √x, the positive root, and -√x, the negative root. The symbol √x , stands for only its positive square root. This root is called the principle square root.
Activity 2:
Students should be able to conclude that x1/2 = √x Students may use a calculator to verify this with numerical values.
Ask students to enter (-4)1/2 in their calculator. Ask "What is the result? Can you understand what the calculator reports this result?" (They should get error on their calculator.) Work the class to produce a statement about the square root of any negative number. For example, the square root of a negative number is undefined because no value squared gives a negative result.
Technology Note: Students may have different calculators, so make sure they use parenthesis for the exponent (or 0.5).
Resources (1)
Resources (1)
Use ACTIVITY 3 in the SqRt2 ACTIVITY SHEET.docx sheet to close the lesson and assess students.
Question 1: Some students will immediately change x1/2 to the √x . Ask students to use the Power of a Power Property to solve for x as well.
Question 2: Despite the two routes students can take, students will usually square root both sides first. Since they have not learned the Square Root of Products Property, tell students to clear the coefficients first and that they will be able to go that route in coming lessons.
Question 3: Remind students of the Power of a Quotient Rule (if necessary). I will let the class struggle with it first and ask out loud, "Can we use one of the properties of powers here?" Try to gear students to using power or a power and square both sides.
Question 4: If students encounter difficulty here, ask them to analyze question 3. They should be able to reason their way toward a solution. The students should be able to figure that they take the square root of both 1 and 9, to get the result 1/3.
Resources (1)
Resources (1)
This homework provides a lot of practice. Students will come in the next day saying that there was no answer for question 9. Ask a student to explain why, when going over the HW.
click here: HOMEWORK.docx
Resources (1)
Resources (1)
Similar Lessons
Racing Molecules
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- UNIT 1: Number Sense
- UNIT 2: Solving Linear Equations
- UNIT 3: Relationships between Quantities/Reasoning with Equations
- UNIT 4: Powers and Exponents
- UNIT 5: Congruence and Similarity
- UNIT 6: Systems of Linear Equations
- UNIT 7: Functions
- UNIT 8: Advanced Equations and Functions
- UNIT 9: The Pythagorean Theorem
- UNIT 10: Volumes of Cylinders, Cones, and Spheres
- UNIT 11: Bivariate Data
- LESSON 1: The Product of Powers Property
- LESSON 2: What if we take a power of a power?
- LESSON 3: Quotient of Powers
- LESSON 4: The Negative Exponent Property
- LESSON 5: Powers of Products and Quotients
- LESSON 6: Remember...the Properties of Powers
- LESSON 7: Square Root Solutions (Part 1 of 2)
- LESSON 8: Square Root Solutions (Part 2 of 2)
- LESSON 9: Cube Root Solutions
- LESSON 10: Multiply and Divide Square Roots
- LESSON 11: Simplifying Radicals
- LESSON 12: Scientific Conversions
- LESSON 13: Operations with Scientific Notations
- LESSON 14: Sun Facts (Part 1 of 2)
- LESSON 15: Sun Facts (Part 2 OF 2)
- LESSON 16: Round Robin Review (Unit 4/L1-6)


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29th March 2010, 12:52 AM | #1 |
diyAudio Member
Join Date: Sep 2003
Location: Melbourne, Australia
Fixing the dreaded power up/down thump!
The one issue that most drives me nuts is that dreaded thump when the system powers up and down. I'm looking for a robust solution. The main culprit is a studio mastering process I run full range - Behringer Ultracurve DEQ2496. The chain looks like this:
DVD > preamp (ESP) + P05 power supply > Behringer Ultracurve DEQ2496 > Behringer Ultradrive DCX2496 > power amps: DSE A2760 Behringer A500 (studio power amp) Behringer Europower EP2500 Rythmik Plate amps I use slave power up switching. So there is an old VCR I don't use that has a remote that powers up the whole system. The DSE is fine as it has relays. None of the other amps have relays. The main problem is powering down. Ultradrive is a bit more well behaved so has reduced the problem slightly without removing it. Two options I won't consider a solution: 1. Leaving things on 2. A manual power up/down sequence I did consider power strips with power sequencing but that's $800 for the cheapest I could find. That breaks down when there is a power failure, so even that is not a fully robust solution. Even just a brief interruption. What I'd like to do is add one or a number of relay circuits. As I see it, I could do this for the last source in the chain - Ultradrive, or I could just do it for every power amp. Ultradrive already has relays, as does Ultracurve but for some reason it doesn't get all the way there. My question for both possible solutions: Can the relay circuits be added externally to existing components? I'm asking this for both line level and power amp level. I've looked at Project 104 - Preamp/ crossover muting circuit Soft-Start Circuit For Power Amps Loudspeaker Protection and Muting Is it a simple matter of having an external power supply then hooking up the relay to the ouputs of the device in question? |
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NEW YORK (CNNMoney.com) -- Only in the world of federal debt do tens of billions of dollars amount to little more than rounding errors.
Yet it's the rounding errors that many lawmakers reach for when making impassioned speeches about reducing the debt.
Whatever merit their ideas may have, they don't have a prayer of generating sizeable savings.
Sure, every little bit counts.
But "a little bit" doesn't really move the needle when you're talking about $12 trillion in accumulated debt, several trillion more expected over the next decade and tens of trillions more on top of that due to long-term shortfalls in Medicare and Social Security.
All told, the long-term fiscal shortfall could top $60 trillion over the next 75 years if nothing changes, said Robert Bixby, director of the Concord Coalition, a deficit watchdog group.
That's why deficit hawks talk about the need to narrow the long-term "fiscal gap." That's a measure of how much money is needed every year starting now just to keep the debt-to-GDP ratio where it is today.
Estimates of that gap range anywhere from 4% to 9% of gross domestic product. In a $14 trillion economy, that means to close the gap altogether Uncle Sam would need to come up with $560 billion to $1.26 trillion a year.
With that in mind, here are just a few of the oft-touted ideas for tackling debt that politicians love to pound the table for while avoiding much tougher -- and infinitely less popular - decisions.
There may be a lot wrong with earmarks, but driving U.S. debt into the stratosphere isn't one of them.
An earmark is typically defined as a slice of the money allocated to an agency that a lawmaker or the president requests be set aside for a specific project.
While some earmarks are much harder to justify than others, they don't represent additional spending -- they're a portion of the total amount of spending that lawmakers have already agreed to in a given year.
And what earmark spending there is doesn't represent more than a small percentage of total spending in any given year.
"Those who suggest that earmark reform is the answer to rapidly rising federal debt are unfortunately diverting the public's attention away from the enormous fiscal issues that face our nation," wrote budget expert Charles Konigsberg in his book "America's Priorities."
Even if everyone agreed on what counts as wasteful spending, eliminating it may not make as big a difference as everyone hopes.
That's because two-thirds of federal spending is mandatory, meaning lawmakers don't get to choose whether or how much to spend on certain budget items such as Social Security and interest on the country's debt.
The other third of the federal budget is so-called "discretionary" spending.
In 2010, the CBO expects discretionary spending will be roughly $1.4 trillion. A little more than half will be on defense, leaving $683 billion for non-defense discretionary items, such as education and transportation.
There's almost certainly some wasteful spending in these areas. But not several hundred billion dollars' worth a year.
The White House budget office has embarked on numerous efforts in the past year to reduce spending, boost efficiencies and curb improper payments. All are important and would be a mean feat if achieved. But their savings -- something close to $20 billion a year -- won't really make a dent in the larger debt problem.
The moral and strategic benefits of providing economic and humanitarian assistance to other countries may become especially intangible to voters when they themselves are hurting in an economic downturn.
But those who might call for a reduction in foreign aid would hardly hit pay-dirt. In the past 30 years, foreign aid has constituted 1% or less of both the size of the economy and of the federal budget.
Typically, only about $20 billion a year is spent in total on humanitarian and economic assistance, according to Konigsberg.
There is a push from the administration and from budget hawks for Congress to adhere to so-called pay-go rules, which require that any spending increases or tax cuts be paid for.
That is, if they want to pass a tax cut that would reduce revenue by $100 billion over 10 years, they would need to either cut spending by $100 billion or raise another $100 billion in revenue from another part of the budget.
What pay-go can do is keep the debt situation from getting worse. But it isn't a panacea.
"Pay-go keeps us where we are. It doesn't put us in a better position," said Bixby, a pay-go proponent.
Couples making more than $250,000 and individuals making more than $200,000 seem to be lawmakers' answer to paying for ... well, everything. Health reform, tax reform, random other legislative initiatives and, of course, deficit reduction.
The problem is that there's just so much money that can be reasonably squeezed from this very small group of Americans.
"The president thinks we will somehow reduce the deficit and fix the tax code without raising taxes by a dime for those poor souls making a quarter million dollars-a-year or less. Unfortunately, that's 95 percent of us. Can't wait to see how he does it," Howard Gleckman, editor of the blog TaxVox, wrote in a recent blog post.
The only way to really lasso the debt situation, budget experts say, is to make a serious attempt to curb spending growth and boost taxes across the board, but particularly with respect to Medicare and Social Security.
That will inevitably mean a reduction in the benefits promised to future retirees and a host of other castor-oil-type remedies that won't garner much applause from the electorate.
Whether lawmakers will make that happen is an open question, Gleckman suggested.
"As long as politicians believe that fiscal discipline is career suicide, little will change."
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text:
Publication number | US3821781 A |
Publication type | Grant |
Publication date | Jun 28, 1974 |
Filing date | Nov 1, 1972 |
Priority date | Nov 1, 1972 |
Also published as | CA1061012A, CA1061012A1, DE2352762A1, DE2352762C2 |
Publication number | US 3821781 A, US 3821781A, US-A-3821781, US3821781 A, US3821781A |
Inventors | C Chang, T Jen |
Original Assignee | Ibm |
Export Citation | BiBTeX, EndNote, RefMan |
Referenced by (26), Classifications (30) | |
External Links: USPTO, USPTO Assignment, Espacenet | |
United States Patent [1 1 Chang et al.
11] 3,821,781 {45} June 28, 1974 I COMPLEMENTARY FIELD EFFECT TRANSISTORS HAVING P DOPED SILICON GATES OTHER PUBLICATIONS Abbas et al., Technical Digest of Dec. 1973, International Electron Devices Meeting, p. 371, (IEEE, NY,
[75] Inventors: Chi Shih Chang, Wappingers Falls; NY)
Teh-Sen Jen, Fishkill, both of NY. Vadasz et al., S1hcon Gate Technology, IEEE Spec- [73] Assignee: International Business Machines trum, Oct 19 9 pp. 2 35 Corporation, Armonk, NY. Faggin et al., Silicon Gate Technology SOIld State I Flledi 1972 Electronics, Vol. 13, pp. l125l I44, Aug. 1970. [21] Appl. No.: 302,962
Primary ExaminerRudolph V. Rolinec Assistant Examiner-William D. Larkins [52] us. gynumuoessua2121.
V 7 H 0 5 ,550 351 2 Attorney, Agent, or Fzrm-Thomas F. Galv n [51] Int. Cl, H01! 19/00 [58] Field of Search 307/304; 317/235 G [57] ABSTRACT 5 References Cited An insulated gate complementary field effect transis- UNITED STATES PATENTS tor integrated circuit uses silicon as the gate electrode. 1 l9 1 3 23 B The gates of both N- and P- channel transistors are 2 69 Kerwm a 5 doped with P, type impurities, thereby balancing the /I97O Legat et a] 317/235 G 3 544 399 12/1970 Dill 317/235 B Voltage threshold Charactensncs of the translstors- 3,576,478 4/1971 The gate insulator is dual nitride-oxide type, which, in 4 9/ 1971 combination with the P-type gates, results in a high surface-state charge density, and requires particular 3:711:753 H1973 Brand et al. 317/235 0 322 2 5 fi for the Channels of the complementary FOREIGN PATENTS OR APPLICATIONS I 2,142,050 3/1972 Germany 317/235 0 5 Clam, 16 Drawmg F'gures 0 leq 500A PREFERRED RANGE v P- DOPED M 2 Qeff 55x 10%" 1 -3 (vars) SUBSTRATE 00V w -N DOPED TPT *P-DOPED (vans) PREFERRED RANGE PAIENIEnwm mm 3.821. 781
saw 1 or 4 FIG-1a PATENTfnJunzs 1914 SHEET 2 (IF 4 PATENTEBaunzs m4 SHEU 3 OF 4 a P- DOPED N DOPED feq 5005 PREFQQEED RANGE NA(Cm j I/ P- DOPED' PREFERRED RANGE Qeff 5.5x 10 cm" V SUBSTRATE (10V F l G. 4
V p 2 VOLTS) PAItmEnauuza am 3.82 1 781 FIG. 2 a 112M.
COMPLEMENTARY FIELD EFFECT TRANSISTORS HAVING P DOPED SILICON GATES BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to field effect transistors. In particular it relates to complementary'field effect transistors formed as an integrated circuit which have silicon as the gate electrodes.
In recent years it has come to be recognized that complementary IGFET devices use substantially less power than standard IGFET devices. When combined with the use of a silicon gate rather than a metal gate, this type of transistor is an ideal compromise between switching speed and power dissipation. These silicon gate complementary IGF ET circuits, as they are termed, have nanowatt quiescent power requirements and can operate at low supply voltages.
As pointed out in the article Silicon Gate Technology in Solid State Electronics 1970 pages 1,125-1 .144, gate electrodes of polycrystalline silicon offer two advantages over standard metal gates: lower threshold voltages and lower capacitance. The work function of polycrystalline silicon can be made much closer to that of the channel inversion layer than can the work function of conventional metal; hence the thresholds are lower. In addition, because the silicon gate also functions as a self-aligning mask for the source and drain diffusions, the capacitance due to overlap of the gate with the source or drain is minimized. The use of the silicon gate has other advantages as well. For example, as compared to FETs with Al gates, the P-doped polycrystalline silicon can also be used for interconnections in integrated circuits, thereby increasing circuit density.
Having realized the substantial advantages offered by complementary symmetry fieldeffect transistors, designers in this field have been attempting to improve them for inclusion insystems where low power is essential. One of the problems inhibiting development of complementary symmetry devices has been to maintain an adequate noise margin while decreasing AC and DC power levels even further. To meet this criterion, it can be demonstrated that the magnitude of the threshold voltage, termed V of the P and N channel devices which comprise the complementary IGFET circuit should be equal; i.e., V for the N channel device should be as close to 1.0 volts as possible and V of the P channel device should be as close to 1.0 volts as possible. In addition, it has been demonstrated that the signal delay through the device, which should also be as low as possible, is'proportional to the difference between the power supply voltage on the devices and the threshold voltages of each device. Therefore, the smaller the threshold voltage, the shorter the signal delay.
Tailoring the threshold voltages of complementary devices to achieve this equality is by no means easy. The threshold voltages are functions of many parameters within the device. The threshold voltage of a field effect transistor is given in many reference books of follows:
'2 where the plus in the plus or minus sign is used for a N channel device, the minus is used for a Pchannel device and:
N, the doping density of the substrate; Q the equivalent oxide-silicon interface charge;
the Fermi potential for the substrate; C, the capacity per unit area of the dielectric gate;
rb the work function potential difference between the gate electrode and the substrate; K the dielectric constant of the gate oxide and q= the electronic charge. See, e.g., A. S. Grove, Physics and Technology of Semiconductor Devices, 1967, pages 281 and 333.
The parameters in this expression which require substantial semiconductor process control and which therefore determine the final threshold voltage V are the substrate doping level N and the oxide charge Q In addition, if silicon is used as the gate electrode, the threshold voltage is affected by the work function 4 Research in this field indicates that equalizing the magnitudes of the threshold voltages in prior art complementary FETs by controlling the substrate doping level is impractical. An impurity concentration in the P pocket which is an order of magnitude higher than the N substrate is required when aluminum or N-doped silicon is used as the gate electrode. This doping level deleteriously affects the threshold sensitivity of the device; and the speed ofthe device is made lower because the diffused junction capacitor, i.e., the Capacitance between source/drain and substrate, is increased.
More recently, it has been suggested that the threshold voltages of complementary symmetry FETs could be shifted and controlled by doping the polycrystalline silicon gate electrodes with a suitable impurity. However, the conductivity type of the dopant for each polycrystalline gate is opposite that of the underlying semiconductor material. In other words, a P type gate is formed over N type silicon and a N type gate is formed over P type silicon substrate.
The above arrangement does not yield threshold voltages for each of the devices which are approximately equal in magnitude and suffers from the aforementioned high P pocket impurity concentration. In addition, this type of structure requires a contact which is attached in common to both silicon gate electrodes to avoid forming a PN junction between the electrodes.
SUMMARY OF THE INVENTION It is therefore an objectof this invention to improve the operation of complementary symmetry field effect devices.
It is a further object of this invention to equalize the ferred material, although amorphous silicon could also be used.
The concentration of the P type impurity is chosen to insure a sheet resistance of from 30 to 100 ohms persquare. The most preferred range is between 35 to 50 ohms per square. The most desirable dopant is boron diffused at a surface doping level of around X per cm. 2
Circuit density of complementary monolithic circuits is increased with P doped silicon gates because the gates can be directly interconnectedwithout the necessity of contact holes to other metallization, as is the case with N- and P- doped silicon.
The process for fabricating the complementary devices is simplified by using a dip etch instead of the usual photo-resist technique to open the windows for the N type diffusions after the P-type diffusions have been completed.
BRIEF DESCRIPTION OF THE DRAWING DESCRIPTION OF THE PREFERRED EMBODIMENT Referring now to the figures, the fabrication of the present field effect transistor circuit will be described.
The present invention is concerned primarily with the doping of the polysilicon gate electrodes and the process used to attain them. However, for a complete understanding of the invention it is necessary to discuss the fabrication of the source and drain regions, the gate structure, the insulation for the gate and the necessary electrical contacts to the source, drain and gate although many of these steps are by this time wellknown to those of skill in the art.
FIG. 1(a) shows a semiconductor body 2 which is shown as N-type silicon, for example, having a typical resistivity of about 10 ohms cm. A surface of the semiconductor body 2 is provided initially with an overall masking layer 4 having an aperture therein in which the P pocket of a N channel device will be fabricated in succeeding steps. The insulator 4 is preferably pyrolytically deposited-silicon dioxide having a thickness of around 1.5 pm. Other techniques could be used to form the oxide and other types of masking layers could be used if desired.
The next step' in the process is the formation of a. screening oxidation layer 6 which is preferably in the process, boron at a dosage of 1.8 X 10 per cm? is ionimplanted into the semiconductor substrate. At an im- 4 planting energy of kev, this results in an implanting depth, R of around 5,000 A.
At this point it should be noted that a'standard diffu- 7 sion process might be used for forming the P pocket 8 using standard photoresist techniques and omitting the formation of the screening oxidation layers 6. However, it has been found that a more constant diffusion level throughout the P pocket can be achieved by ion implantation techniques.
For the next step in the process the oxide layers 4 and 6 are stripped by conventional techniques from the substrate 2. Then, as shown in FIG. 1(0). a screening oxidation is performed to form an oxide layer 10 of around 500 A over the entire surface of substrate 2. This step also causes a partial drive-in of P pocket 8. A N type impurity is then deposited in areas 12 adjacent P pocket 8. Preferably this is performed by masking region 8 with a photoresist and then ion-implanting phosphorous in areas 12 to a depth of around 2,500 A below the screen oxide 10. Typically, this is accomplished by a dosage of 7 X 10 per cm of phosphorous impurity applied at 150 kev to form N skin regions 12.
FIG. 1(d) illustrates the final'step in preparing the substrate 2 for the formation of the complementary FETs. The P pocket 8 and the N-skin 12 are now subjected to a drive-in cycle. This isaccomplished by the standard technique of heating for about three hours at 1, 150C in anatmosphere of nitrogen. At this point the skin layer 12 of N type impurity has a diffusion level of l X 10 per cm to a depth of around 1.5 pm and the P pocket has a diffusion level of around 4 X l0 per cm at a depth of around 3 pm. i
The preparation of the substrate to achieve the device shown in FIG. 1((1) can be accomplished by other techniques. For example, if it were desired, the N type substrate could be doped to have a resistivity of around 0.5 ohm-cm- This provides the proper impurity level for the 1 channel device area. The P pocket is formed in the usual manner and the drive-in step is applied to the P pocket only. Another technique involves outdiffusion of a P region from a substrate into a N type epitaxial layer. Other techniques for forming the P pocket and the N layer at the surface of the substrate will occur to those of skill in the art and could be used with equal efiectiveness in the present invention.
Returning now to the figures, FIG. 1(e) shows an oxide layer 14 which has been grown, preferably by thermal oxidation or pyrolytic oxidation to a depth of around 7,000 A atop the surface of the substrate 2. As shown in FIG. 1(e) oxide layer 14 has been selectively etched to leave openings at apertures 3 and 7 for contacts to the N layer 12 and the P pocket 8, respectively. Openings 5 and 9 are for the fabricationof the s channel complementary devices, respecaround 300 A of silicon nitride; and layer 20 is preferably between 5,000 A and 8,000 A of polycrystalline silicon.'The techniques for depositing these materials atop a semiconductor substrate are wellknown to those of skill in the art and further detail is deemed to be unnec essary at this point in time.
In FIG. 1(g) the polysilicon gates 20. and 20" are patternedatop the apertures 5 and 9 in the substrate.
Areas 11 and 13 will be utilized in a subsequent step for the formation of the source and drain regions of the P channel device; and areas 15 and 17 will comprise the source and drain of the N channel device. The patterning of the polysilicon gates and 20 may be performed by first oxidizing the entire polysilicon layer 20. Subsequently, a photoresist layer may be applied and the oxide selectively etched from the upper surface of the polysilicon layer except in those locations Where it is desired to have the polysilicon gate. The polysilicon is then etched away except in those areas where it is protected by the oxide layer. After the excess polysilicon is removed, the oxide atop the polysilicon gates 20 and 20 may be removed by a dip etch. Silicon nitride layer 18 will protect the remainder of the substrate from the-etchant.
FIG. 1(11) shows the next step in the process in which a pyrolytically deposited oxide layer 22 is deposited on sion areas are needed. After the oxide layer 22 has been selectively etched layers 24 are removed, the apertures 3, 15 and 17 being protected by oxide layers 22. Thus, the P type diffusion windows ll, 13 and 7 are covered by thin nitride layer 18 and thin oxide layer 16 whereas the N type diffusion windows 3, 15 and 17 are also covered bythe oxide layer 22 which is around 1,000 A thick.
A hot phosphoric acid etch which attacks the nitride layer 18 but which does not attack the oxide layer 22 is then applied to the substrate. This removes the nitride layer from all regions of the substrate except where it is covered by the oxide layer 22. Subsequently a buffered l-IF etch is applied to the substrate, removing oxide layer 22 and those regions of oxide layer 16 which are not still covered by the nitride layer 18. As shown in FIG. 1(j) these steps cause the diffusion regions 3, 15 and 17 to remain protected by the thin niride and oxide layers whereas apertures 11, 13 and 7 are opened for a subsequent diffusion step. In addition, the polysilicon gates 20 and 20" are also open for the diffusion of a P type impurity.
Thus at this point, the polysilicon gates 20 and 20", the drain and source regions 23 and 26 of the P channel device, and the P-pocket contact region 28, can be doped by a P type impurity which in this-preferred embodiment is B Br The doping level of the boron is preferably around 5 X 10 per cm at a depth, X,-, of around 50 microinches in'the windows 11, 13 and 7. The polycrystalline silicon gates 20 and 20", which when initially deposited are essentially intrinsic, also become highly doped to form P silicon gates. This step is a critical part of the present invention. As previously noted, the doping of the gates of both the N and P channel devices with a Pfimpurity makes the threshold voltages of each device virtually equal in magnitude. In addition, the doping is accomplished in the same step as the diffusion of the source and drain regionsv of the P channel device, thereby accomplishing the fabrication in the usual number of masking steps which would have been required without the doping of the gates.
As illustrated in FIGS. 1(k) and 1(1), the formation of the N type diffusions in windows 15, 17 and 3 is accomplished by the steps of oxidizing the areas of the previous P type diffusion'with an oxide layer and dip-etching the silicon nitride layer 28 and the thin oxide layer 16 from the apertures 3, 15 and 17. The oxide layer 25 is around 1,500 A thick, which is substantially thicker than the 300 A oxide layer 16. By means of the dip etch technique, the usual steps of photo-resist application, selective hardening and removal and complete removal after diffusion are eliminated. The dip-etching may be performed by first immersing the device in hot phosphoric acid to remove nitride layer 16 and then in buffered HF for a time sufficient to remove oxide layer 18 but insufficient to remove thick oxide layer 25; Thus in the etching step which removes the oxide layer 16 from apertures 15, 17 and 3, oxide layer 24 is substantially unaffected as a mask for subsequent phosphorus diffusion.
In FIG. 1(l) N type diffusions 30, 32 and 34 are made at the appropriate areas in the substrate. In the preferred embodiment the N diffusion is performed by a vapor diffusion of phosphorus oxychloride. The phosphorus is subsequently subjected to a drive-in cycle. At
this point the device is essentially complete. The remaining steps, which are not illustrated, would comprise the deposition of pyrolitic oxide, the opening of contact hole and the evaporation of metallurgy at the surface of the substrate for appropriate connection into an operative circuit. These'steps are deemed not to be requisite for an understanding of the present invention.
FIGS. 2(a) and 2(b) and FIG. 3 illustrate a circuit containing FET devices using the P doped polycrystalline silicon gate electrodes of this invention. FIG. 2(a) shows a schematic top view of a two-way NAND circuit. This NAND gate contains in the semiconductor substrate l02'an area of P type material 103. Formed within the P pocket 103 are a pair of N channel field effecttransistors. The first transistor 202 comprises N+ region 126 and N+ region 128 plus a polysilicon gate overlying insulation layers 118 and 116. A heavily doped P+ region 127 is diffused as a contact to the P pocket 103. Regions 126 and 127 are connected to ground potential through a contact to metallization 113 overlying the substrate. N channel transistor 201 comprises N+ doped regions 128 and 129 and gate electrode 120".
The P channel devices 203 and 204 are formed in a similar fashion in the N substrate 102. Transistor 203 comprises P+ regions 121 and as the source and drain regions and polycrystalline silicon layer 120' as the gate region. Transistor 204 comprises P region 123, gate electrode 120" and P region 125. By means of appropriate contacts through windows in insulation layers 132 and 134, the source regions of transistors 203 and 204 as well as the N+ regions 122 and 124 are connected by metallization 111 to a source of positive potential 116. The drain regions of transistors 203 and 204 as well as the drain of N channel transistor 201 are connected via metallization 112 as the output of the circuit. FIG. 3 shows the circuit schematic of the integrated circuit illustrated in FIGS. 2(a) and 2(b). When used as a two way NAND gate, metallization 114 and 115 serve as input leads to the-device while metallization 112 serves as the output lead from the device. The source and substrate regions of P channel devices 203 and 204 are connected via lead 111 to voltage source 116 which is typically around 2 to 10 volts. The drain regions of the P channel devices203 and 204 as well as the drain of N channel device 201 are connected to output lead 112. Thedevices are enhancement mode devices; i.e., normally nonconducting.
To illustrate the operation of the circuit, assume that positive signals or up levels are applied to input leads 114 and 115. The regions beneath the gates of N type FETs 201 and 202 invert and create channel regions in which minority carriers predominate between the source and drain of each transistor; thusboth transistors 201 and 202 conduct at the down level. The same input levels on leads 114 and 115 hold the P channel transistors 203 and 204 off, thereby providing a high load resistance between the potential 116 and the output. At this point the output lead is a ground potential.
When either input isup and the other is down, the corresponding N channel devices are on and off, re-
- spectively, and the path from ground to the output through the ,N channel transistors is open. However, ei-,
put is also at the up level.
Although the circuit in H6. 3 is well-known in the art and does not form any part of the present invention, it has been described to better illustrate the present invention. As has been previously pointed out, by doping the gates of both the P and N channel devices with a P type impurity, the magnitudes of the threshold 'voltages of the devices are made substantially equal. Therefore, the value of the supply voltage 1 16 can be chosen to be lower than would be possible if the magnitude of the threshold voltages of the devices were different. This results in lower power dissipation than in previous devices and also insures minimal signal delay through the circuit for a particular power supply voltage.
FIG. 4 illustrates the improved results obtained with P-doped silicon gates. The upper half of the graph is a plot of the threshold voltage in the N channel device versus the impurity level in the P-pocket. The lower half is a similar plot for the P channel device. vAs will be seen from FIG. 4, the threshold voltages of the P and N channel complementary devices are substantially equal in magnitude if the P pocket of the N channel device has an impurity level around 2 to 4 X atoms/cm and the Nregion of the P channel device has an impurity level of around 5 X l0 to l X 10 atoms/cm.
For the same circuit having a N doped, rather than a P-doped, silicon gate over the N channel device, the impurity level in the P pocket must be around 7 X IOf/Cm or higher. This substantially higher doping level causes an undesirable increase in the substrate sensitivity of the threshold voltage and also increases the diffused junction capacitance, thereby lowering the switching speed of the device.
There is another advantage-of doping all of the gates of the integrated circuit with a P-type impurity only. in devices having both P- and N-type impurities diffused into the gates, the interconnection of the gate lines atop the semiconductor surface requires contact openings to the gates which are connected by a metal conductive line, such asthe standard aluminum metallurgy. If this were not done, a PIN junction would be formed at the intersection of the N- and P-type silicon gate lines. Such contacts are totally unnecessary when only P-' doped silicon gates are used. The gates can be directly interconnected, thereby allowing the device designer to achieve a higher circuit density for a given semiconductor area.
While the invention has been'described in terms of a particular process for fabricating the complementary transistor device in integrated form, it has been pointed out previously that other processes for forming the P and N regions within the substrate could be used. in addition the preferred process described for forming the gate and drain and source regions is commonly termed the self-aligned gate process whereby the gate is first formed over a region and the drain and source are then formed on each side of the gate. However, the invention is not limited to this particular process and would operate satisfactorily if the source and drain were formed prior to the gate. Finally, while the particular type of circuit used to better describe theinvention hasbeen in terms of a two-way NAND gate, other more or the P region of the'N channel device has an impurity level of around 2 to 4 X 10 atoms/cm; and
the N region of the P channel device has an impurity level of around 5 X 10 to l X l0 'atoms/cm whereby the threshold voltages of said complementary pair of devices are substantially equal.
2. A complementary pair of field effect transistor devices as in claim 1 wherein the sheet resistance of said gate electrodes is within the range of 30-100 ohms per i square.
3. A complementary pair of field effect transistor devices as in claim 2 wherein said sheet resistance is between 35 50 ohms per square.
4. A complementary pair of field effect transistor devices as in claim '1 wherein said P type impurity is boron having a surface doping level of around 5 X lo /cm.
5. A complementary pair of field effect transistor devices formed in a semiconductor substrate and including polycrystalline silicon as the gate electrodes thereof, said devicesforming at least a portion of an integrated field effect transistor circuit, wherein:
the equivalent oxide-silicon interface charge is around 3.5 X 10 per cm the P region of the N channel device has an impurity level of around 2 to 4 X lOfatoms/cm; and the N region of the P channel device has an impurity level of around 5 X 10 to l X l0 'atoms/cm said gate electrodes are doped with a P type impurity; and said gateelectrodes are directly interconnected as conductive lines to form a portion of the connec-' tions in said integrated-circuit. J
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US5257095 * | Apr 19, 1990 | Oct 26, 1993 | Advanced Micro Devices, Inc. | Common geometry high voltage tolerant long channel and high speed short channel field effect transistors |
US5289027 * | Sep 28, 1992 | Feb 22, 1994 | Hughes Aircraft Company | Ultrathin submicron MOSFET with intrinsic channel |
US6172402 * | Jun 4, 1998 | Jan 9, 2001 | Advanced Micro Devices | Integrated circuit having transistors that include insulative punchthrough regions and method of formation |
US7067844 | Apr 12, 2001 | Jun 27, 2006 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device |
US7098479 * | Feb 1, 2000 | Aug 29, 2006 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
US7115902 | Feb 7, 2000 | Oct 3, 2006 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
US7576360 | Oct 2, 2006 | Aug 18, 2009 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device which comprises thin film transistors and method for manufacturing the same |
US20070018165 * | Oct 2, 2006 | Jan 25, 2007 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
DE3324332A1 * | Jul 6, 1983 | Jan 12, 1984 | Intel Corp | Verfahren zur herstellung von cmos-transistoren auf einem siliziumsubstrat |
WO1997032343A1 * | Feb 10, 1997 | Sep 4, 1997 | Sierra Semiconductor Coporation | High-precision, linear mos capacitor |
U.S. Classification | 257/405, 257/E27.66, 148/DIG.122, 327/581, 148/DIG.430, 257/E21.637, 257/406, 148/DIG.530, 438/199, 326/122, 257/369 |
International Classification | H01L29/49, H01L27/092, H01L29/43, H01L21/8238, H01L29/78, H01L29/00, H01L21/331, H01L29/417, H01L29/423, H01L29/73 |
Cooperative Classification | H01L29/00, H01L21/823842, Y10S148/122, H01L27/0927, Y10S148/053, Y10S148/043 |
European Classification | H01L29/00, H01L27/092P, H01L21/8238G4 |


text:
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text:
"Acoustic Guitar Styles" introduces the most popular traditional styles for the acoustic guitar. The step-by-step approach, using a small repertoire of well-known songs, enables the student to explore various styles that can be adapted to play personal favorites. Although a basic knowledge of the guitar is assumed, even the beginner will benefit from this progressive approach.Create a review
About Author
Larry Sandberg has been teaching guitar for over forty years. He is the author of the Acoustic Guitar Guide (2001) and co-author of the Folk Music Sourcebook. He is a regular contributor to Acoustic Guitar magazine, as well as other guitar publications. He teaches guitar as an adjunct faculty member at the University of Colorado and is on the faculty of the Denver Folklore Center.Contents
American Roots Guitar Styles * Introduction * Acknowledgments Part I: Preliminaries 1. How to Use This Book Basics * Notes and Tablature * Setting Your Pace * Finding Your Place and Using the CD * Listening * Tuning 2. Basic Chord Shapes 3. Chord Progression Practice Chord Progressions * Making Chord Changes * Practicing Chord Progressions * Chord Progressions for Practice 4. Basic Picking and Plucking Patterns 5. Using Alternating Bass Notes to Vary Picking and Strumming Patterns Hammering 6. Songs to Work With Transposition * Singing * The Songs 7. More Flatpicking and Fingerpicking Patterns Brushing and Strumming * Pattern Picking Part II. Guitar Styles 8. Old-Time, Bluegrass, and Early Country Styles Carter Style Melody Playing * Breaking the Rules with Bass Notes * Conclusion to Carter Style Playing 9. Melodic Fingerpicking Preparation for Melodic Fingerpicking * Playing Melodies * Conclusion to Melodic Fingerpicking 10. Country Blues The Blues Sound * The Blues Form: 12-Bar Blues * Transposing the Blues * Blues Tracks *Conclusion to the Blues 11. Song Gallery Crawdad Song-Carter Style * On Top of Old Smoky-Carter Style * This Little Light of Mine-Carter Style * Railroad Bill-Carter Style * Hello Blues-Fingerpicked * Crawdad Song-Fingerpicked * This Little Light of Mine-Fingerpicked * Generic Rag * Saint James InfirmaryProduct Details
- publication date: 16/05/2002
- Format: Paperback
- Number Of Pages: 128
- weight: 385
Delivery Information
- Saver Delivery: Yes
- 1st Class Delivery: Yes
- Courier Delivery: Yes
- Store Delivery: Yes


text:
Added: Saturday, February 12, 2011
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Lexical illusions are very hard to find when proofreading. The most common lexical illusion is a duplicated word, as in this well-known example:
A lexical illusion: many people are not aware that the the brain will automatically ignore a second instance of the word 'the' when it starts a new line.
But if you let grep and AWK do the proofreading — problem solved!
Duplications on one line:grep
Word duplications are sometimes just as easily overlooked when they're on a single line, as in this example:
The Liberal Party has taken the old line so beloved of economic think tanks since the 1980s of cutting company taxes and and assisting innovation, while the ALP's approach involves an emphasis on on education spending and concerns over inequality that is increasingly becoming the new standard.
A good way to find the dupes is with this grep code, which I found here :
grep -onE '(/b.+) /1/b'
The grep options used are '-o', which returns only the looked-for string, rather than the whole line; '-n', which gives the number of the line with the looked-for string; and '-E', which allows grep to use nifty things likebackreferences.
The looked-for string is a regular expression. The bit in brackets is word boundary (/b) followed by 1 or more appearances (+) of any character (.) . This is followed by a space, then a backreference (/1) representing the bit in brackets, and closing with another word boundary. If that last '/b' wasn't in the regex, grep would return non-duplications like ' on on e occasion'.
Duplications across successive lines: AWK
Here's an AWK command that finds line pairs in which the last word of the first line is also the first word of the second line. It relies on the fact that AWK recognises words as separate fields, because they're separated by whitespace, and that's the default field separator for AWK.
awk '$1==a {print b"/n"$0; a=""; b=""} {a=$NF; b=$0}'
AWK reads the text line by line, and the command begins with a pattern-action statement: if the first field (word) equals the variable 'a', AWK does the action in brackets, namely print… But wait! No variable 'a' has been defined yet, so that action can't happen on the first line. AWK moves to the second action, which is to set the variable 'a' equal to the contents of the last field/word ( $NF ) in the first line, and the variable 'b' to the contents of the whole first line ( $0 ).
Next, AWK reads the second line. If the first word in this line is the same as the last word in the last line, AWK prints the last line (as stored in 'b'), followed by a newline, followed by the whole current line. It then 'empties' the two variables by setting them equal to the empty string ' "" '. Whether the first word equals the last word or not, AWK also does the second action, namely fill the two variables with the last word in the current line and the whole current line, ready for a test of the third line. If no line pairs pass the test, AWK doesn't print any lines.
We can make this command slightly cooler by allowing for the possibility that there are lexical illusions on successive lines, as here:
A lexical illusion: many people are not aware that the the brain will automatically ignore ignore a second instance of the word 'the' when it starts a new line. awk '$1==a {print b"/n"$0"/n"; a=""; b=""} {a=$NF; b=$0}'
The command now adds a blank line after each two-line match, so that successive illusion-pairs appear separately in the output. Note that AWK will ignore spaces at the beginnings and ends of lines, since they're separators, not fields:
About the Author
Bob Mesibov is Tasmanian, retired and a keen Linux tinkerer.


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text:
52 Pages Posted: 15 Nov 2015
Date Written: November 13, 2015
The modern First Amendment embodies the idea of freedom as a fundamental good of contemporary American society. The First Amendment protects and promotes everybody's freedom of thought, belief, speech, and religious exercise as basic goods — as given ends of American political and moral life. It does not protect these freedoms for the sake of promoting any particular vision of the virtuous society. It is neutral on that score, setting limits only in those rare cases when the exercise of a First Amendment freedom exacts an intolerable social cost.
Something like this collection of views constitutes the conventional account of the First Amendment. This essay offers it two challenges. First, the development of the First Amendment over the past century suggests that freedom is not an American sociopolitical end. It is a means — a gateway out of one kind of political and legal culture and into another with its own distinctive virtues and vices. Freedom is not a social solution but instead gives rise to a social problem — the problem of how to allocate a resource in civically responsible ways, so as to limit freedom's hurtful potential and to make citizens worthy of the freedoms they are granted. Only a somewhat virtuous society can sustain a regime of political liberty without collapsing, as a society, altogether. Thus the First Amendment of the conventional account has not maximized freedom for all people and groups. It has promoted a distinctive set of views about the virtuous legal and political society.
Second, the new legal culture promoted and entrenched by the conventional account is increasingly finding that account uncongenial. In fact, the conventional account is positively harmful to its continued flourishing. That is because the new legal culture's core values are not the First Amendment freedoms themselves but the particular conceptions of political and social equality and individual dignity that the conventional account has facilitated and promoted. Proponents of the new legal culture in consequence now argue for aggressive limits on First Amendment freedoms.
One prominent group has invented a new legal category: "enumerated rights Lochnerism." These scholars denigrate any First Amendment resistance to multiplying forms of expansive government regulation in the service of egalitarian aims as retrogressively libertarian. Another group argues for novel limits on the First Amendment in the form of balancing tests that would restrict speech that injures the dignity of listeners and religious exercise that results in vaguely defined and vaguely delimited harms to third parties. What unites these critics is the desire to swell features of the Court's post-New Deal Fourteenth Amendment jurisprudence, and particularly the law concerning sex as a civil right, by protecting progressively expansive conceptions of equality and individual dignity. The critics see the conventional account of the First Amendment as an obstacle in the path of progress.
Part I of this essay presents the conventional account of the First Amendment in three theses. It then critiques the conventional account in Part II by offering three revised theses, developed through the somewhat unusual route of exploring the First Amendment thought of the late political theorist and constitutional scholar, Walter Berns. Freedom, for Berns, gave rise to a problem — the problem of making men sufficiently virtuous to merit their freedom. It was a problem that he thought had been ignored or even forgotten by defenders of the conventional account of the First Amendment.
But the problem of virtue and freedom has been remembered. Part III argues that contemporary defenders of the new legal culture have remembered the problem just as their own cultural and legal mores are ascendant. The new civic virtues — exemplified in multiplying anti-discrimination regulations for the protection of thickening conceptions of equality and individual dignity, particularly as those concepts relate to sexual autonomy — are those that were fostered by the conventional account of the First Amendment in tandem with significant components of the Supreme Court's post-New Deal Fourteenth Amendment jurisprudence. And those civic virtues are already informing new criticisms of the conventional account and arguments about new limitations on the scope of religious freedom and freedom of speech. Berns's arguments about freedom and virtue, it turns out, are highly relevant today since progressive opinion is no longer committed to First Amendment "absolutism."
The essay concludes with two speculations. First, it seems we are no longer arguing about whether to restrict freedom, but for what ends. If that is true, then those arguments should neither begin nor end with egalitarian and sexual libertarian fervor. Second, there is no account of the First Amendment that maximizes freedom for everyone — for all persons and groups. There is only the society that America was before the rise of the conventional account of the First Amendment and the society that it is becoming after it.
Suggested Citation: Suggested Citation
DeGirolami, Marc O., Virtue, Freedom, and the First Amendment (November 13, 2015). Notre Dame Law Review, Forthcoming; St. John's Legal Studies Research Paper No. 15-0031. Available at SSRN: https://ssrn.com/abstract=2690314


text: Sometimes it's just a great place to go, but without that order screen you don't know if they have the order right. This morning was another time it was not correct. I don't think the woman listens. I was angry when I got to the pay window, and I didn't even ask her to fix it, like I did yesterday!... More


text:
Contact information
firstname.lastname@example.com | |
Tel | +44 (0)1865 281720 |
Carrie Perkins
Visiting Study Fellow
Carrie Perkins is a cultural anthropologist, specializing in applied work with refugee communities. She holds both an MA in Anthropology from Southern Methodist University as well as an MSc in Applied Anthropology from the University of North Texas and is currently a PhD Candidate in Anthropology at SMU, focusing specifically on issues related to protracted refugee situations and the repatriation of Burmese refugees in Southeast Asia. Carrie's previous thesis work examined food adjustment and cultural identity in resettled Burmese refugees in Dallas, Texas and she has continued to conduct refugee related research in Myanmar (Burma), Mae La refugee camp on the Thai-Burma border and Domiz refugee camp in Iraqi Kurdistan. Additional areas of interest include urban agriculture and community gardens, specifically in the context of refugee communities, as well as material culture and art as expressions of movement and migration.
Academic contact: Professor Alexander Betts


text:
Alice on a bench swinger her feet reading a magazine over a friends shoulder.
Camera pans down to see a pair of white boots walking behind the bench. A flash of white calf and long white hair (hair may be OTT).
Alice checks out the "rabbit". Looks, stares, follows.
Scenes of pursuit, always the "rabbit" one step ahead, turning the corner, never see the "rabbit" as a whole. Alice chasing, running while the "rabbit" strides with purpose.
The "rabbit" takes a suddden turn, alice follows blindly and immediatly stumbles into darkness, only guided by the flash of white.
Note: focus on foot level camera work, the sound of footsteps and disorientation.
Alice goes from the bright light of day into the darkness of the rabbit hole club.
A Hallway, a door and a key. To travel further she must accepts the offered free drink and free food.


text:
Type: CaseStudy
Reykjavik's long term goals regarding climate change are to achieve a 35% reduction in net emissions by 2020 and a 73% reduction by 2050 compared to 2007 levels. The main emissions are from road transport—close to 70%. Almost all electricity and space heating in the city is provided from renewable energy sources: hydro and geothermal. Therefore, the main opportunity to lower GHG emissions in Reykjavik city is by conserving energy in transportation. The main focus has been on replacing fossil fuel for transportation with biogas.
Reykjavik has produced bio methane from its landfill since 1996. In the early years, the gas was flared to reduce GHG emissions. In 1999 a company was established to handle the production and marketing of energy made from methane. In 2000 a filling station was opened and the first 21dual fuel cars were imported. In 2005 the City of Reykjavik bought its first methane powered cars, a waste collection truck and two buses. A further eight methane powered waste collection trucks were procured in the following two years.
An important milestone in using methane as vehicle fuel was in 2008 when a 10 km gas pipeline was laid from the production site to the filling station. The original station was fitted with an additional four pumps and a second station was opened. By 2008, 90% of the waste collection trucks in Reykjavik ran on bio methane.
In order to lower the environmental impact of the city car fleet, another important step was taken in 2011: green procurement procedures for cars were introduced. The move was very effective and Reykjavik added 49 methane powered city cars to their fleet replacing petrol cars. Today almost 50% of the car fleet is run on bio methane and there is an ongoing project to purchase more methane powered cars.
The bio methane consumption was approximately 32,603 Nm3 in 2007. By 2011, bio methane use was 127,470 Nm3; equivalent to 143,000 liters of petrol. The energy savings over the last 5 years total 4.610 MWh and 1.384 tons of CO2. The total fuel savings equals 590,000 liters of petrol. Today fossil fuel use of municipal cars is about 100,000 liters, approximately 260 tons of CO2 per year.
The local authority is an important leader in a project like this. To get the ball rolling and investment in the necessary infrastructure, initial biogas use in the vehicle fleet has to be relatively high. Therefore, methane gas driven waste collection trucks and buses were an important part of the project.
Centralized green procurement of a large percentage of the city car fleet was also an important boost for the project. The methane gas technique is well developed. Raw materials for bio methane production are various, including biodegradable waste, sewage sludge, pig and poultry manure and seaweed. There are therefore many opportunities to start and grow production.
Today, more than 50% of the Reykjavik City fleet is methane driven and this number will increase with the additional procurement of methane driven light commercial vehicles in the near future. The key success factors of this project were the collaboration between the bio methane producer and the city, and ensuring high bio methane consumption during the first phase by procuring methane powered buses and waste collection trucks.


text:
AWQAF Africa Muslim Open College
Established | 2005 |
Parent institution
AWQAF Africa |
Religious affiliation
Muslim |
President | Sheikh Dr. Adelabu |
Location | London, United Kingdom |
Language | English |
AWQAF Africa Muslim Open College is an institution of AWQAF Africa's educational department. It was launched in London 2005 to cater for educational needs of the Africans (including the North Africans) and for people of African origin (e.g. the Caribbeans).[1]
The Muslim Open College was founded while studying postgraduate degrees in Damascus early 1990s by founder of Awqaf Africa Sheikh Abu-Abdullah Adelabu (Ph.D. Damas), a West African Muslim scholar and cleric of Nigerian origin who is the international organization's first al Amir (i.e. President).[2] The African academic Sheikh Dr. Adelabu serves as the Amir (i.e. President) of Awqaf Africa College, where he also lectures and supervises on dissertations and publications of his students and followers, including the African Muslim Portals such as www.esinislam.com, www.islamfrica.com, and www.islamicafrica.com. Day-to-day activities and management of the College, its lectures, seminals, and administration are run mainly by volunteers and associates of Awqaf Africa in London, United Kingdom, Damascus, Syria, Lagos, Nigeria and Cape Town, South Africa.[3]
The Muslim Open College, like its umbrella organization Awqaf Africa, is an international organization which is incorporated in its structure with African Hajj and 'Umrah Commission (AHUC) and African Union Muslim or AUMuslims working to relieve human suffering amongst the Muslims of Africa - in particular and as a primary objective - and around the world - as necessary. It shares with Awqaf Africa the same aims and objectives such which are projected for all nations of the continent, especially, their Muslim societies where each national society effectuates programmes of Awqaf Africa. Relief, human dignity, and spiritual uplift remain main goals of the international body.[4]
Therefore, through education Awqaf Africa's Open College seeks the causes of suffering, poverty, and Islamophobia and tries to eliminate them under the amiable banner of Islamic teachings.
The Open College is also projected to provide, in particular, the African Muslims with studies and qualifications that enable them to serve themselves and their Muslim communities, offering them maximum flexibility, so that they can build a program of studies that fits both their personal and community needs and adapt accordingly. Awqaf Africa gives priority to those who serve or intend to serve the Muslim communities through teachings and preachings or administration and career development.[5]
Studies at Awqaf Africa Muslim Open College are free, especially for the Africans (including the North Africans) and for people of African Origins (e.g. the Caribbeans) in an effort to help people develop their spiritual uplifts, to become a teacher, to foster their career development for the Muslims, or to serve as a Da^'i, offering them a true learning experience, supporting them as they study their first course with Awqaf Africa and appealing they intend to serve the Muslims and their interests - appreciating that a prospect of studying with Awqaf Africa could be so exciting that students overlook the sacred needs to be devoted to the amiable values of Islam.[6]
The College coordinates a number of educational and training programmes for several Muslim portals including EsinIslam.com and IslamAfrica.com.
Qualifications and departments[edit]
- Certificate.[7]
(for the beginners with no or less awareness and/or no previous courses in Islamic Studies) in
- Jurisprudence & Theology
- Literature & Theology
- History & Jurisprudence
- Ordinary Diploma (OD).[8]
(for the intermediaries with good awareness and/or previous short or light courses in Islamic Studies) in
- Jurisprudence & Theology
- Literature & Theology
- History & Jurisprudence
- Sociology & Theology
- Advanced Diploma (AD).[9]
(for the well-informed with better awareness or previous qualifications in Islamic Studies) in
- Jurisprudence & Theology
- Literature & Theology
- History & Jurisprudence
- Sociology & Theology
- Finance & Jurisprudence
- Higher Diploma (HD).[10]
(for the well established and specialized "Students Of Islamic Knowledge" or/and recognized Du'a^t with good knowlwdge in Islamic Studies) in
- Jurisprudence & Theology
- Literature & Theology
- History & Jurisprudence
- Sociology & Theology
- Finance & Jurisprudence
Studies towards each award as above take a minimum of two years with each academic year lasting nine months, opening two weeks after (the pilgrimage or) 'I^d ul kabi^r and closing a week before (the fasting month of) Ramadan.
- ^ About Awqaf Africa [1]
- ^ Biography Of Sheikh Dr. Abu-Abdullah Adelabu [2]
- ^ Origin Of Awqaf Africa [3]
- ^ [Delab International Magazine, London August 1999]
- ^ Studying With Awqaf Africa [4]
- ^ Why Awqaf Africa [5]
- ^ Awqaf Africa Certificate [6]
- ^ Africa Ordinary Diploma[7]
- ^ Awqaf Africa Advanced Diploma [8]
- ^ Awqaf Africa Higher Diploma [9]


text:
If you didn't get enough racing in this Memorial Day weekend, come down to Tulsa Raceway Park for the final day of our 1/8 mile Super Pro only Megabucks race. We are discounting the tech cards on Monday down to $100 for a $5,000 to win race. The guaranteed purse is:
Winner - $5,000
Semi - $500
1/4's - $250
1/8's - $100
1/16's - $50
No buybacks. Enter up to 4 times with the same car.
Plus, the only time trial will be a $20 entry Dial-For-Dollars (you can enter one time for each tech card). Winner gets 50%, Runner-up gets 25%. Gates open at 7am, Dial-for-Dollars at 9am.
Come to TRP on Memorial Day Monday. $5,000 to win!
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text:
Share your reviews,
photos and videos here!
Involvement:Expert (understands the inner workings) - Ownership:1 day to 1 week
Pros:Much, much cheaper then original Nintendo remote. You get whole package, remote, nunchack, silicone sleeve and strip. Build quality is decent. While gaming there is absolutely no difference in experience compared to original one. Pairing went smooth just like original one. Packaging is ok, it came with thin protective film over remotes which prevents scrathing in transport.
Cons:Some buttons are more easy (softer) to press which I dont like but that's personal thing. Batteries dont last as long as in the original wiimote but that's nothing to worry about if you have rechargable batteries like I do :-)
OtherThoughts:No other thoughts that I can think of right now.
Bottomline:If you need extra remotes for those four player wii partys with your friends and family this is excellent choice. I will definately order one more in the future.