text:
|Publication number
|Publication type
|Application number
|Publication date
|Sep 15, 2009
|Filing date
|May 2, 2002
|Priority date
|May 2, 2002
|Fee status
|Also published as
|Publication number
|Garo J. Derderian, Gurtej Singh Sandhu
|Original Assignee
|Micron Technology, Inc.
|Export Citation
|BiBTeX, EndNote, RefMan
|Patent Citations (107), Non-Patent Citations (99), Referenced by (42), Classifications (25), Legal Events (7)
|External Links: USPTO, USPTO Assignment, Espacenet
The present invention relates to deposition techniques and, more particularly, to deposition techniques for forming thin films on wafers or substrates and then converting the films into a different another composition.
Integrated circuits (IC) are often fabricated with one or more semiconductor devices, which may include diodes, capacitors, and different varieties of transistors. These devices are generally fabricated by creating thin films of various materials, e.g. metals, semiconductors or insulators, upon a substrate or semiconductor wafer. Wafer and substrate are used interchangeably to refer to semiconductor structures during processing, and may include other layers that have been fabricated thereon. The physical characteristics and tightly controlled placement of films on a substrate will define the performance of the semiconductor device and its surrounding circuitry. Many semiconductor devices require a dielectric layer that must be reliable. Specifically, the dielectric layer must be essentially free from defects that cause shorting through the dielectric layer. Oxides and nitrides are used to form dielectric layers in semiconductor devices.
One process for forming metal oxide thin films on semiconductor wafers is chemical vapor deposition ("CVD"). CVD is used to form a thin film of a desired material from a reaction of vapor-phase chemicals containing the chemical constituents of the material. CVD processes operate by confining one or more semiconductor wafers in a reaction chamber. The chamber is filled with one or more gases that surround the wafer. The gases for the deposition of metal oxides includes a metal precursor and a reactant gas, e.g. water vapor, to be introduced into the chamber at the same time. Energy is supplied within the chamber and particularly to the reactant gases near the wafer surface. A typical energy is heat applied to the substrate. The energy activates the reactant gas chemistry to deposit a film from the gases onto the heated substrate. Such chemical vapor deposition of a solid onto a surface involves a heterogeneous surface reaction of the gaseous species that adsorb onto the surface. The rate of film growth and the quality of the film depend on the process conditions. Unfortunately, the metal precursor and the reactant gas also react during the gas phase remote from the substrate. Such a gas phase reaction produces contaminants and/or involve a significant quantity of precursor so that an insufficient amount is available for deposition on the substrate. As a result, the gas phase reaction may become dominant and the thin film coverage is poor. That is, pinholes may be formed in the resulting metal oxide layer. Moreover, using water (H2O) gas as the reactant gas results in impurities, such as hydroxide (OH), remaining in the resulting metal oxide layer.
Semiconductor fabrication continues to advance, requiring finer dimensional tolerances and control. Modern integrated circuit design has advanced to the point where line width may be 0.25 microns or less. As a result, repeatability and uniformity of processes and their results is becoming increasingly important. Generally, it is desired to have thin films deposited on the wafer to save space. Yet reducing the thickness of films can result in pinholes and in less mechanical strength.
Another development in the field of thin film technology for coating substrates is atomic layer deposition (ALD). A description of ALD is set forth in U.S. Pat. No. 5,879,459, which is herein incorporated by reference in its entirety. ALD operates by confining a wafer in a reaction chamber at a typical temperature of less than 300 degrees C. Precursor gas is pulsed into the chamber, wherein the pulsed precursor forms a monolayer on the substrate by chemisorption. The low temperature limits the bonding of the precursor to chemisorption, thus only a single layer, usually only one atom or molecule thick, is grown on the wafer. Each pulse is separated by a purge pulse which completely purges all of the precursor gas from the chamber before the next pulse of precursor gas begins. Each injection of precursor gas provides a new single atomic layer on the previously deposited layers to form a layer of film. Obviously, this significantly increases the time it takes to depose a layer having adequate thickness on the substrate. As a numerical example, ALD has a typical deposition rate of about 100 Å/min and CVD has a typical deposition rate of about 1000 Å/min. For at least this reason, ALD has not met with widespread commercial acceptance.
In light of the foregoing, there is a need for fabrication of thin films which are thinner and have a reduced number of defects.
The above mentioned problems with thin film fabrication techniques are addressed by the present invention and will be understood by reading and studying the following specification. Systems and methods are provided for fabricating thin films on substrates. The fabrication technique of the present invention grows a thin film by atomic layer deposition and then converts the film to produce a thin film having a different composition than the ALD deposited film. In an embodiment, each ALD thin film is converted before a subsequent ALD film is deposited. In one embodiment of the invention, a metal film is deposited by ALD. The metal film is then oxidized to produce a metal oxide film. In an embodiment, the metal is aluminum. In an embodiment, the metal is titanium. In an embodiment, the metal is tantalum.
In an embodiment, the thin film formed by atomic layer deposition is converted from an essentially pure metal film to a compound film that includes the metal and at least one second element. In an embodiment, the second element is oxygen. In an embodiment, the compound film is an oxide. In an embodiment, the second element is nitrogen. In an embodiment, the compound film is a nitride. In an embodiment, the second element is boron. In an embodiment, the compound film is a boride. In an embodiment, the second element is carbon. In an embodiment, the compound film is a carbide. In an embodiment, the second element is fluorine. In an embodiment, the compound film is a fluoride.
In an embodiment, a laminate or compound layer having at least two compounds in the layer is formed. The first element layer is deposited by ALD. This layer is then converted to a compound. A second element layer is deposited by ALD. This layer is then converted to a compound. In an embodiment, both the first and second elements are deposited by ALD and then both elements are converted. In an embodiment, one of the first element layer and second element layer is deposited by ALD and not converted. If the one layer includes a compound, then it is deposited by ALD in its compound form. The other of the first element layer and the second element layer is converted.
Additional embodiments of the invention include deposition devices and systems for forming metal oxide films on substrates, and machine readable media having fabrication instructions stored thereon, all according to the teachings of the present invention as described herein.
These and other embodiments, aspects, advantages, and features of the present invention will be set forth in part in the description which follows, and in part will become apparent to those skilled in the art by reference to the following description of the invention and referenced drawings or by practice of the invention. The aspects, advantages, and features of the invention are realized and attained by means of the instrumentalities, procedures, and combinations particularly pointed out in the appended claims.
In the following detailed description of the invention, reference is made to the accompanying drawings which form a part hereof, and in which is shown, by way of illustration, specific embodiments in which the invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. Other embodiments may be utilized and structural, logical, and electrical changes may be made without departing from the scope of the present invention. The terms wafer and substrate used in the following description include any structure having an exposed surface onto which a layer is deposited according to the present invention, for example to form the integrated circuit (IC) structure. The term substrate is understood to include semiconductor wafers. The term substrate is also used to refer to semiconductor structures during processing, and may include other layers that have been fabricated thereupon. Both wafer and substrate include doped and undoped semiconductors, epitaxial semiconductor layers supported by a base semiconductor or insulator, as well as other semiconductor structures well known to one skilled in the art. The term conductor is understood to include semiconductors, and the term insulator is defined to include any material that is less electrically conductive than the materials referred to as conductors. The following detailed description is, therefore, not to be taken in a limiting sense, and the scope of the present invention is defined only by the appended claims, along with the full scope of equivalents to which such claims are entitled.
According to the teachings of the present invention, fabrication of films on substrates, devices and systems for such fabrication, media containing instructions therefor, and integrated circuits produced according to the present invention are described.
The use, construction and fundamental operation of reactors for deposition of films are understood by those of ordinary skill in the art of semiconductor fabrication. The present invention may be practiced on a variety of such reactors without undue experimentation. Furthermore, one of ordinary skill in the art will comprehend the necessary detection, measurement, and control techniques in the art of semiconductor fabrication as well as the more inclusive art of industrial processing for producing films on substrates upon reading the disclosure.
It will be understood that the terms "precursor" and "reactant" are used herein to differentiate between a chemical compound that includes a metal component to be deposited on a substrate and a gas which reacts with the compound to deposit the metal component on a wafer. This nomenclature is used herein as a tool to clearly describe the invention as both the "precursor" and the "reactant" chemically react with each other to form the desired film on the substrate. Accordingly, the term "precursor" is not intended to imply a time relationship with the "reactant" unless explicitly described.
Applicant hereby incorporates by reference copending U.S. patent application Ser. No. 09/782,207, which is assigned to the assignee of the present application.
The precursor gas containing a first element, e.g., metal, to be deposited on the substrate now flows into the reaction chamber (212). The metals include, for example, titanium, tantalum, or aluminum. The metals can also include alloys of these metals or other metal that one of ordinary skill would deposit on a substrate. The precursor gas flow continues until a volume closely adjacent the surface of the substrate on which the metal will be deposited is saturated by the precursor gas (214). According to the teachings of the present invention, the precursor gas saturates the topology of the substrate so that adequate precursor material is adjacent the substrate surface by the precursor gas entering and filling the steps, trenches, and holes. One of ordinary skill will understand the same upon reading the disclosure. The precursor gas flow, as well as purge gas flow if present, continues until the required saturation occurs depending on the processing conditions dictated by the type of substrate and precursor gas, and the topology of the substrate (216). A substrate having numerous or high aspect steps may require a longer precursor gas flow period than a substrate which has few steps or relative low aspect steps
Precursor gas flow ends once the precursor gas saturates adjacent the substrate according to the processing conditions of the present deposition (218). After or substantially at the same time precursor gas flow is stopped, reactant gas flow (for example, activated hydrogen) begins in the reaction chamber (220). Reactant gas continues to flow into the reaction chamber until the reactant gas saturates the volume adjacent the surface of the substrate on which the substance in the precursor gas will be deposited (222). The precursor gas and the reactant gas chemically react and deposit the desired material in a ALD layer, e.g., monolayer, on the substrate. In an embodiment, the deposited monolayer is about one atomic layer thick. In an embodiment, the deposited ALD layer is more than one atomic layer thick. The monolayer and the ALD layer are an essentially pure layer of a single element.
The present process may continue the purge gas flow while the reactant gas flows into the reaction chamber (224). Once a sufficient quantity of reaction gas is present to complete the reaction with the precursor to deposit a layer on the substrate, reaction gas flow ends (226). Purge gas flow may continue to partially flush the residual reaction and precursor gases and the by-product gas of the precursor and reactant reaction from the reaction chamber. A converting gas flows into the reaction chamber (228). The converting gas includes an oxidizing gas. The oxidizing gas oxidizes the monolayer, which is a metal, to form a dielectric layer. The oxidation continues until sufficient time has elapsed to oxidize essentially all of the metal monolayer (230). If the monolayer is not sufficiently oxidized the process continues flowing the oxidizing gas to the metal monolayer. Once the monolayer is sufficiently converted, e.g., oxidized, then the process proceeds to step 232. At step 232, it is determined if the converted layer formed by the previous steps has the desired film thickness. If the converted formed by one or a plurality of the ALD and conversion steps of the present invention has the desired thickness, then the ALD and conversion process of the present invention ends. If purge gas is still flowing, then the purge gas flow ends (234) usually after the remnants of the precursor, reactant, and by-product gases are purged from the chamber. The process of the present invention terminates at box 236. The reader should note that process termination may comprise initiation of further processing and does not necessarily require shutdown of the reactor, e.g. the above sequence of steps can be repeated or additional fabrication steps are performed. While one embodiment of the invention includes all of the above steps, the present invention includes other embodiments which do not include all of the above steps.
If the desired thickness of the layer has not been achieved (222), then the process returns to step 210 or step 212 and begins another cycle. The process then reiterates the above sequence/process until step 232 determines that the converted layer has the desired thickness.
One embodiment of the present inventive process is shown in
The converting gas includes an activated element that reacts with the ALD deposited layer. In an embodiment, the converting gas includes an activated oxygen. In an embodiment, the converting gas includes activated NH3. In an embodiment, the converting gas includes activated N2O.
The amounts of the precursor gas, the reactant gas, or the converting gas meets or exceeds the amount of material required by the stoichiometry of the particular reaction. That is, the amount of precursor, reactant, converting gas flow, in certain embodiments, provides excess mass in the reactor. The excess mass is provided to ensure an adequate reaction at the surface of the wafer. In this embodiment, the ratio of precursor, reactant, or converting components in the gas phase usually is different than the stoichiometry of the film.
Dielectric layer or gate insulator layer 313 or 327 is a metal oxide material having a composition that includes the form MOx. In one embodiment, the metal component M is a refractory metal. In an embodiment, the refractory metal is tantalum (Ta). In an embodiment, the refractory metal is titanium (Ti). In an embodiment, the refractory metal is tungsten (W). The refractory metals of chromium (Cr), cobalt (Co), hafnium (Hf), molybdenum (Mo), niobium (Nb), vanadium (V) and zirconium (Zr) are included in some embodiments. Benefits may be derived by matching the metal oxide layer to the adjacent metal-containing electrode. For example, the TaOx layer 313 or 327 can be grown on a tantalum containing bottom electrode layer.
ALD reactor 400 includes means for supplying energy to the reactable constituents or compounds in the process gases in chamber 401 on the surface of the substrate 402. The supplied energy causes the reactable constituents to react or decompose and deposit a thin film onto an upper surface of substrate 402. In one embodiment, the supplied energy includes thermal energy supplied by heat lamps 406. In the illustrated example, lamps 406 are positioned in the base of chamber 401. Heat lamps 406 emit a significant amount of near-infra red radiation that passes through susceptor 407 to heat substrate 402. Alternatively, susceptor 407 is heated by heat lamps 406 and substrate 402 is heated by conduction from susceptor 407. The heat lamps 406 may be placed at alternate locations according to the parameters of the specific deposition process being performed according to the present invention.
Another embodiment supplies reaction energy by a radio frequency (RF) generator 408 as shown in
In general, the energy sources 406 and 408 are intended to provide sufficient reaction energy in a region near the surface of substrate 402 to cause decomposition and/or reaction of the constituents of the present gas to deposit the first element, e.g., the metal species, in the process gases onto a surface of the substrate. One of ordinary skill in the art will understand upon reading the disclosure that any one, combination, or equivalent of the above can be employed to provide the necessary reaction energy.
One embodiment includes plasma reactors because these allow film deposition at lower temperatures and are used in the semiconductor industry. However, some reactant constituents in the process gases may deposit at low temperatures using only thermal energy or other energy sources. Hence, the invention encompasses reactor designs using any energy source including either thermal heating, RF plasma, or the like.
ALD reactor 400 is illustrated as a single wafer reactor, but it should be understood that the invention is applicable to batch reactors.
Furthermore, ALD reactor 400 includes associated control apparatus (not shown) for detecting, measuring and controlling process conditions within ALD reactor 400. Associated control apparatus include, as examples, temperature sensors, pressure transducers, flow meters and control valves. Associated control apparatus further include other devices suitable for the detection, measurement and control of the various process conditions described herein.
One of ordinary skill in the art will comprehend other suitable reactors for practicing the invention described in this application, for example the reactors described in U.S. Pat. Nos. 5,879,459 and 6,305,314, herein incorporated by reference.
The control system 510 includes, integrally or separable therefrom, a machine readable media 535 which contains instructions for performing the present invention. Media 535 may be an electrical, magnetic, optical, mechanical, etc. storage device that stores instructions that are read by control system 510. Such storage devices include magnetic disks and tape, optical disks, computer memory, etc. Control system 510 may also include a processor (not shown) for issuing instructions to control reactor 400 based upon instructions read from machine readable media 535.
Memory Devices
It will be understood that the above description of a memory device is intended to provide a general understanding of the memory and is not a complete description of all the elements and features of a specific type of memory, such as DRAM (Dynamic Random Access Memory). Further, the invention is equally applicable to any size and type of memory circuit and is not intended to be limited to the DRAM described above. Other alternative types of devices include SRAM (Static Random Access Memory) or Flash memories. Additionally, the DRAM could be a synchronous DRAM commonly referred to as SGRAM (Synchronous Graphics Random Access Memory), SDRAM (Synchronous Dynamic Random Access Memory), SDRAM II, and DDR SDRAM (Double Data Rate SDRAM), as well as Synchlink or Rambus DRAMs and other emerging DRAM technologies.
Semiconductor Dies
With reference to
Circuit Modules
As shown in
Some examples of a circuit module include memory modules, device drivers, power modules, communication modems, processor modules and application-specific modules, and may include multilayer, multichip modules. Circuit module 800 may be a subcomponent of a variety of electronic systems, such as a clock, a television, a cell phone, a personal computer, an automobile, an industrial control system, an aircraft and others. Circuit module 800 will have a variety of leads 810 extending therefrom and coupled to the dies 710 providing unilateral or bilateral communication and control.
Electronic Systems
While the above described embodiments describe first injecting the precursor gas and then injecting the reactant gas, it will be understood that it is within the scope of the present invention to first inject the reactant gas such that it saturates the volume adjacent the substrate and then inject the precursor. The precursor will enter the volume and react with the already present reactant gas and form a film on the substrate. The thus formed film is then converted according to the teachings of the present invention.
The above description described forming compounds, such as metal oxides, by ALD depositing a first monolayer, e.g., metal layer, on a substrate and/or a prior layer and then converting, e.g., oxidizing the metal layer to form a metal oxide. The present invention is also applicable to forming other elemental layers in an integrated circuit. For example, a layer is deposited using ALD and then the layer is nitrided. Thus, the layer is now a nitride layer. The process is repeated until the nitride layer has the desired thickness.
In another embodiment of the present invention, the layer is subjected to boron and thus becomes a boride layer. The above described steps are performed with the boron replacing the oxygen.
In another embodiment of the present invention, the layer is subjected to carbon and thus becomes a carbide layer. The above described steps are performed with the carbon replacing the oxygen.
In another embodiment of the present invention, the layer is subjected to fluorine and thus becomes a fluoride layer. The above described steps are performed with the fluorine replacing the oxygen.
In another embodiment of the present invention, the layer is subjected to phosphorus and thus becomes a phosphide layer. The above described steps are performed with the phosphorus replacing the oxygen.
The above description sets forth embodiments of the present invention that atomic layer deposit a single element, then subject it to a further element to convert the single element layer to an oxide, carbide, nitride, boride, fluoride, or phosphide two element layer. Embodiments of the present invention further provide for multiple element layer to be oxided or subjected to other elements for conversion as described herein. Accordingly, the present invention produces mixed phase films. In an embodiment, the mixed phase films include more than one base element. The first element is deposited using ALD in an ALD layer, monolayer or atomic layer. It is then converted according to the teachings of the present invention. A second element is deposited using ALD in a monolayer or atomic layer. The second element layer is then converted according to the teachings of the present invention. In an embodiment, the first or second element is an alloy of a metal. Consequently, mixed element film is formed by sequentially depositing and converting the first element and the subsequent element(s). It will be appreciated that the present method is adaptable to higher orders of elements in the film, wherein a third element is deposited and converted, . . . and an nth element is deposited and converted.
An example of such an ALD layer that is converted according to the teachings of the present invention include, but are not limited to, titanium and silicon in the base film. One embodiment would be formed by depositing both titanium and silicon by ALD then converting one or both according to the teachings of the present invention to form TiO2SiNx. Titanium is deposited in an ALD layer, such as a monolayer, using ALD and then converted according to the teachings herein. Silicon is deposited and then converted either before or after the titanium. Accordingly, the film that is formed alternates depositing and converting the titanium and the silicon.
An embodiment according to the teachings of the present invention includes depositing titanium and silicon by ALD and then converting both elements with oxygen to form TiOxSiOx. The titanium is first deposited, then oxidized. The silicon is then deposited, then converted using oxygen. In a further embodiment, the titanium and silicon are both deposited by ALD, then both converted by oxidizing the titanium and silicon. In a further embodiment, either the TiOx or SiOx is deposited according to ALD and the other of the TiOx or SiOx is deposited by ALD and then converted according to the teachings of the present invention.
An embodiment according to the teachings of the present invention includes depositing titanium by ALD and then converting the titanium using both oxygen and nitrogen to form a TiOxTiN layer. In a further embodiment, either the TiOx or TiN is deposited according to ALD and the other of the TiOx or TiN is deposited by ALD and then converted according to the teachings of the present invention.
An embodiment according to the teachings of the present invention includes depositing silicon by ALD and then converting the silicon using both oxygen and nitrogen to form a SiOxSiN layer. In a further embodiment, either the SiN or SiOx is deposited according to ALD and the other of the SiN or SiOx is deposited by ALD and then converted according to the teachings of the present invention.
An embodiment according to the teachings of the present invention includes depositing tantalum and silicon by ALD and converting tantalum with nitrogen to form TaNSi. The tantalum is deposited, then converted with nitrogen. The silicon is deposited by ALD. In a further embodiment, the present invention forms TaNTaSi.
An embodiment according to the teachings of the present invention includes depositing aluminum and titanium by ALD and then converting both elements with oxygen to form AlO3TiO2. The titanium is first deposited, then oxidized. The aluminum is then deposited, then converted using oxygen. In a further embodiment, the titanium and aluminum are both deposited by ALD, then both converted by oxidizing the titanium and aluminum. In a further embodiment, either the TiO2 or AlO3 is deposited according to ALD and the other of the TiO2 or AlO3 is deposited by ALD and then converted according to the teachings of the present invention.
The present invention includes methods of forming alloys or mixed element films and converting the alloy or mixed element films according to the teachings of the present invention. Some of the above embodiment describe specific elements that are deposited and converted or deposited in combination with elements that are converted according to the teachings of the present invention. It will be recognized that the order and methods described in conjunction with these specific elements are adaptable to other elements that are used to form layers in integrated circuits.
Thus, the present invention provides novel structures and methods for fabrication of thin films on substrates. The novel fabrication method of the present invention forms a first layer of a single element by ALD and then converts the first layer to a second layer having two constituent elements. The first layer is formed by atomic layer deposition and then converted. In an embodiment, each first layer produced during an atomic layer deposition is converted before a subsequent first layer is deposited on the prior converted sub-layer. In an embodiment, conversion is oxidation and the first layer is a metal. In an embodiment, each metal sub-layer produced during an atomic layer deposition is oxidized before a subsequent metal sub-layer is deposited on the prior oxidized metal sub-layer. Accordingly, each sub-layer is formed at a molecular level by atomic layer deposition and thus has a high quality. Quality includes low impurity and low defects. Each sub-layer is then oxidized. Accordingly, the oxidation is throughout the sub-layer and prevents nonoxidized areas in the sub-layer. The process is then repeated to until the oxidized sub-layers produce a film or layer that has the desired thickness.
The present invention includes any other applications in which the above structures and fabrication methods are used. The scope of the invention should be determined with reference to the appended claims, along with the full scope of equivalents to which such claims are entitled.
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|Asm Ip Holding B.V.
|Process gas management for an inductively-coupled plasma deposition reactor
|Dec 21, 2015
|Mar 28, 2017
|Asm Ip Holding B.V.
|Method for forming silicon oxide cap layer for solid state diffusion process
|Dec 28, 2015
|Apr 18, 2017
|Asm Ip Holding B.V.
|Continuous process incorporating atomic layer etching
|Jan 28, 2015
|Apr 18, 2017
|Micron Technology, Inc.
|Graded dielectric structures
|Dec 26, 2012
|May 2, 2017
|Asm Ip Holding B.V.
|Single-and dual-chamber module-attachable wafer-handling chamber
|Aug 14, 2015
|May 9, 2017
|Asm Ip Holding B.V.
|Methods of forming highly p-type doped germanium tin films and structures and devices including the films
|Oct 7, 2014
|May 23, 2017
|Asm Ip Holding B.V.
|Variable conductance gas distribution apparatus and method
|Aug 28, 2012
|May 23, 2017
|Asm Ip Holding B.V.
|Systems and methods for dynamic semiconductor process scheduling
|Aug 25, 2015
|Jul 18, 2017
|Asm Ip Holding B.V.
|Method for forming aluminum nitride-based film by PEALD
|Dec 28, 2015
|Aug 15, 2017
|Asm Ip Holding B.V.
|Method of atomic layer etching using functional group-containing fluorocarbon
|Feb 19, 2016
|Sep 5, 2017
|Asm Ip Holding B.V.
|Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
|Jan 27, 2015
|Oct 17, 2017
|Asm Ip Holding B.V.
|Method and system to reduce outgassing in a reaction chamber
|Jul 6, 2016
|Oct 17, 2017
|Asm Ip Holding B.V.
|Structures and devices including germanium-tin films and methods of forming same
|Jul 14, 2016
|Oct 17, 2017
|ASM IP Holding B.V
|Method of cyclic dry etching using etchant film
|Jun 22, 2011
|Oct 17, 2017
|Asm Japan K.K.
|Method for positioning wafers in multiple wafer transport
|Jul 28, 2016
|Nov 7, 2017
|Asm Ip Holding B.V.
|Method and apparatus for filling a gap
|Feb 6, 2007
|Jun 21, 2007
|Qhalid Fareed
|Methods of growing nitride-based film using varying pulses
|Jul 16, 2012
|Jan 16, 2014
|Asm Ip Holding B.V.
|Method for Forming Aluminum Oxide Film Using Al Compound Containing Alkyl Group and Alkoxy or Alkylamine Group
|U.S. Classification
|438/785, 438/763
|International Classification
|Cooperative Classification
|May 2, 2002
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text:
Dodgers can't recover from Phils' homers
Pair of three-run shots trump long balls by Manny, Loney
By Ken Gurnick / MLB.com
Carlos Ruiz keyed a five-run fifth inning off Clayton Kershaw with a three-run homer and, after the Dodgers pulled to within a run, reliever George Sherrill allowed a three-run blast to Raul Ibanez in the eighth as the Dodgers absorbed an 8-6 loss in Game 1 of the National League Championship Series on Thursday night.
Home runs from Manny Ramirez and James Loney couldn't overcome the uncharacteristic collapse by the best pitching staff in the league in this rematch from last year, when the Dodgers lost in five games and twice to Thursday night winner Cole Hamels.
"Any time you win on the road the first game is definitely a big win," Philadelphia manager Charlie Manuel said. "It sets up tomorrow's game and that gives us a chance to really go home looking good."
The Dodgers kept grinding away in this game, cutting a 5-1 deficit to 5-4, then an 8-4 deficit to 8-6. They had Ramirez, who homered in the fifth inning, at the plate representing the go-ahead run with two outs in the eighth inning, but he grounded out.
They ran up Hamels' pitch count to 106 when he was removed after 5 1/3 innings. They outhit the Phillies, 14-8, three each by Loney and Andre Ethier. They even had the bullpen duel they wanted.
But Sherrill walked the first two batters he faced, then allowed as many runs on one pitch to Ibanez as he had in the 2 1/2 months since his acquisition July 30. Sherrill has allowed four runs on five hits with three walks and a hit batter in 3 1/3 postseason innings.
"I think that was a shock for everybody," manager Joe Torre said of Sherrill. "But he'll get the ball tomorrow in the eighth inning. It's just one of those things."
The Dodgers double back for a must-win day game Friday. Since the League Championship Series moved to a seven-game format in 1985, the team taking a 1-0 lead in the NLCS has won 16 of 23 series, including 14 of the past 16. In the NLCS with the ALCS combined, the Game 1 winner is 28-18.
The Phillies are the 11th road team to take a 1-0 advantage in the NLCS since '85, with eight of the first 10 advancing to the World Series. The past seven road teams to win Game 1 have gone on to win the NLCS.
Kershaw -- chosen for this assignment instead of Randy Wolf, who started Game 1 in the first round -- showed why Torre would entrust a 21-year-old with the Game 1 start while allowing one hit over four scoreless innings.
But in the fifth, when a few close pitches weren't called strikes by plate umpire Randy Marsh, Kershaw suddenly turned into a 21-year-old. He allowed three walks, an NLCS-record-tying three wild pitches and the homer to Ruiz.
Torre -- having explained earlier to reporters that Don Zimmer taught him the postseason is no time to be patient with pitchers -- left Kershaw in long enough to allow five runs in one inning, the most in any of his starts since April 26. Most telling were the five walks Kershaw allowed.
"As quickly as it got away from him, where his pitch count was [50 in four innings], as far as I'm concerned, he's going to have to fight his way out of that, that early in the game," Torre said. "It looked like he tried to overthrow the ball. It looked like he got frustrated."
Kershaw had a 1-0 lead on a Loney homer in the second inning and had allowed only one hit until the fateful fifth, which he couldn't finish despite throwing 33 pitches.
"That's where a more veteran guy will step back away and slow it down," Dodgers pitching coach Rick Honeycutt said. "Greg Maddux used to say it best -- go slower. Young guys want to power it through."
Loney went more than a year between home runs at Dodger Stadium and had only one in 275 at-bats there during the regular season. But he caught a Hamels 2-1 fastball on the inner half of the plate and lined it over the right-field fence leading off the bottom of the second inning. It was Loney's first homer at home against a lefty since May 2008.
The only hit Kershaw allowed through the first four innings was former Dodgers farmhand Shane Victorino's broken-bat single to left with one out in the first inning.
Tough hill to climbSince the League Championship Series moved to a seven-game format in 1985, teams that have lost Game 1 have only won 18 of the 46 series combined between the two leagues. Here's the breakdown of how teams that lost Game 1 have fared:
- 18-28
American League
- 11-12
National League
- 7-16
But Kershaw said he lost command of his pitches in the fifth and couldn't adjust quickly enough.
"I really don't have an answer for it," Kershaw said. "I wish I knew. I didn't throw enough strikes and didn't get the job done. I lost my command and it just kind of skyrocketed on me."
Ibanez led off with a single, advanced to second on the first of three wild pitches in the inning and Pedro Feliz walked. Ruiz followed by tomahawking a 2-1 high fastball into the Mannywood box seats for a three-run homer. Kershaw then walked Hamels on four pitches and rookie Scott Elbert started warming up in the bullpen.
Kershaw got Jimmy Rollins on a forceout and struck out Victorino, but Chase Utley worked a walk. Torre let Kershaw face Ryan Howard, who laced a two-run double to right field for a 5-1 lead and Torre finally removed Kershaw.
"You know, to me he's the starting pitcher in Game 1, so I felt that that's what I wanted to do," Torre said, defending his decision to leave Kershaw in. "I've got a quality left-hander on the mound. Things didn't work out. We gave away too much as far as the number of walks we issued [seven, four of them scoring]. But I mean, this young man, I trust him a great deal and it just didn't work out tonight."
The Dodgers battled right back with three in the bottom of the fifth, which started with Russell Martin's ground-rule double. Rafael Furcal singled Martin to third and he scored when Utley's relay on Ethier's likely inning-ending double-play grounder sailed into the Philadelphia dugout.
The error cost the Phillies two more runs when, with the inning extended, Ramirez launched a 2-0 fastball into the pavilion in left-center. Ramirez not only showed he hadn't forgotten how to hit them, he also showed he hadn't forgotten how to watch them, standing at the plate until the ball was just about to land in the seats. The homer extended Ramirez's Major League postseason record to 29 and left him two behind Bernie Williams for the RBI record with 78.
Hamels was chased with a pair of one-out singles in the sixth, his pitch count up to 106. With two out, pinch-hitter Jim Thome walked off reliever J.A. Happ to load the bases, but Furcal grounded out.
The Dodgers answered the Ibanez homer with two runs in the bottom of the eighth on an RBI single by Martin and a sacrifice fly by Furcal, but Ramirez left runners on the corners with a groundout.
Ken Gurnick is a reporter for MLB.com. This story was not subject to the approval of Major League Baseball or its clubs.

subset: commoncrawl


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Agreed! The Notebook! I've only seen that movie once because I'm scared to watch it again.
Other movies that make me cry:
The Titanic
The Rescuers
I can't really think of anymore right now..my mind is kind of Twilight absorbed right now.
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text:
IDC altered its numbers due to consumer purchasing behavior during the last quarter of 2012, during which it saw a surge in purchases of smaller tablets.
"One in every two tablets shipped [during the fourth quarter of 2012] was below 8 inches in screen size. And in terms of shipments, we expect smaller tablets to continue growing in 2013 and beyond," said Jitesh Ubrani, Research Analyst for IDC's Tablet Tracker. "Vendors are moving quickly to compete in this space as consumers realize that these small devices are often more ideal than larger tablets for their daily consumption habits."
[ Tablets are making big headway in education. Read Why Tablets Will Kill Smart Boards In Classrooms. ]
Android tablets may have a leg up on the Apple iPad and iPad Mini thanks to their lower price point. Devices such as the Asus Nexus 7, with its $199 price tag, are appealing when compared to more expensive Apple hardware. The iPad Mini, for example, starts at $329 and jumps up quickly if you add features such as LTE 4G or more storage. Consider, also, the recently announced Galaxy Note 8 from Samsung. This appealing 8-inch tablet brings many of the Note II smartphone's features up to tablet size at a price that still beats the iPad.
The Nexus 7, Galaxy Note 8 and other Android tablets will account for 48.8% of the 190.9 million tablets shipped during 2013 (about 93.6 million tablets). That's up from IDC's previous forecasts for the year, which were much lower at 41.5%.
At the same time, IDC said, Apple's share of the tablet market will slip from the 51% of shipments it held at the end of 2012 to about 46% of shipments (about 87.9 million) by the end of 2013.
That means Android-based tablets will outmatch the iPad for the first time, with 48.8% of the tablet market this year, compared to 46%. That will certainly sting Apple, as it defined the current tablet market with the iPad.
Android and Apple aren't the only players in the game, however. Believe it or not, Microsoft is going to make some noise in the tablet market this year, said IDC, thanks to Windows 8 (think Surface Pro) and Windows RT. Both of Microsoft's tablet platforms will steal share that would otherwise have gone to Apple or Google, but not everything is necessarily going well with Microsoft's tablet plans.
"Microsoft's decision to push two different tablet operating systems, Windows 8 and Windows RT, has yielded poor results in the market so far," said Tom Mainelli, tablets research director. "Consumers aren't buying Windows RT's value proposition, and long term we think Microsoft and its partners would be better served by focusing their attention on improving Windows 8. Such a focus could drive better share growth in the tablet category down the road."
According to IDC, Windows 8 accounted for 1% of all tablets at the end of 2012. That figure will slowly grow to about 7.4% by 2017. IDC doesn't think Windows RT will ever break 3% of the tablet market.
The Enterprise Connect conference program covers the full range of platforms, services and applications that comprise modern communications and collaboration systems. Hear case studies from senior enterprise executives, as well as from the leaders of major industry players like Cisco, Microsoft, Avaya, Google and more. Register for Enterprise Connect 2013 today with code IWKPREM to save $200 off a conference pass or get a free Expo Pass. It happens March 18-21 in Orlando, Fla.


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Knoxville (WVLT) - The call to reinstate the draft comes from New York Congressman Charles Rangel.
The Democrat is the incoming chairman of the House Ways and Means Committee.
Here's what he had to say about the idea Sunday on Face the Nation.
"If we're going to challenge Iran and challenge North Korea and then, as some people have asked, to send more troops to Iraq, we can't do that without a draft," says US Rep. Charles Rangel, (D) New York.
Congressman Rangel says the Bush Administration would never have invaded Iraq if a Draft had been in place and politicians thought their own children might end up in combat.
Some Tennessee Congressmen, along with local military leaders, are speaking out against Congressman Rangle's position on the draft.
Volunteer TV's Kim Bedford spoke with some of them about the issue.
Many leaders are fired up about even the thought of a possible military draft.
They all say our troops are doing what they need to do right now and reinstating a draft would hurt the country tremendously.
"I believe everybody should serve their country, but I don't think we need a draft," Gunny Cramer is a retired marine who trains ROTC students at Bearden High School for the Army.
"It's an all-volunteer force. It's working. We're getting the best of the crop that comes out of the high schools now-a-days," Cramer says.
Cramer says we don't need to mess up our military with draftees right now.
"I think if you end up doing a draft, we're going to have the same problems we had during Vietnam. People that don't want to be there are not going to perform," Cramer says.
"I don't think a free country should have to force people to work for the government," Second District Congressman Jimmy Duncan says so many Americans serve our country outside of military service.
"Businessmen and nurses and teachers, garbage collectors and electricians. All kinds of people who work hard and honorable jobs," Congressman Duncan says.
"We have plenty of young men and women that want to volunteer. A volunteer army has worked very, very well," 4th District Congressman Lincoln Davis says Charlie Rangle's Draft proposal is a big mistake.
"I think it's a way for Democrats to politicize the board, play politics with our troops, and I think we have to take it very seriously," Congressman Davis says.
"I don't know a half dozen people out of 535 in congress that actually think we should have a mandatory service," Zach Wamp,3rd District Congressman, says there's very little support in congress for a military draft.
"Right now we're still meeting the goals for reinstatement and for retention," says Wamp.
"They're doing what they need to do. If we put more people there, more casualties," Cramer says.
Newly elected US Senator Bob Corker tells WVLT he believes our volunteer army has been a success and he does not support a draft at this time.
All four of East Tennessee's Congressmen, along with Senator Lamar Alexander tell us the chances of a draft reinstatement actually passing are very slim, but anything is possible.
Everyone we talk to about this agrees a military draft would dramatically change the lives of so many Americans.


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Right until she stumbled and fell from a ledge during a hike on April 2, Palo Alto resident Carol Hyde's love and enthusiasm for life and people affected everyone she met. She was the kind of person who instantly made people feel they were the most special person in the room, her friend, Julie Bitler, said.
Hyde, 53, was hiking with her husband and daughter near the Devil's Bridge, north of Sedona, Ariz., in an area known for its rock formations when she fell about 75 feet in a freak accident, her husband Larry said. She was sitting on a nearby rock while he took photos of their 13-year-old daughter, Melanie. For some reason, she stood up and tripped, and the momentum caused her to fall head-first into the ravine, he said.
A trauma nurse and several other people immediately went to her aid. Winds of more than 20 miles per hour and gusts exceeding 35 miles per hour prevented her evacuation by air ambulance, he said. With precious minutes turning into hours, rescue personnel carried her about a quarter mile to an off-road vehicle, and she was taken by ambulance to the Flagstaff Medical Center, where she succumbed to her extensive injuries several hours later.
Hyde loved to travel and to plan vacations. She would plan the trips and pull out maps, and she loved the American Southwest in general, visiting Anasazi ruins and hiking in Utah, according to her husband.
"She spent endless hours researching the very best place to stay and the very best things to do," Larry Hyde said. "She had been looking forward to going to Sedona for the last year or so. Even despite this tragedy, she was doing something she wanted to do and she was where she wanted to be."
Carol Hyde had a way that affected people deeply, even those who barely knew her. Persons who had encountered her on the trail that day said they immediately felt her warmth and caring spirit.
"In just the few moments we shared at the bridge, Carol made us smile with her friendly, caring way. I can only imagine how amazing she was in life," Alisa Hoover, who was also hiking in the same area, said in a posting below a story about the tragedy by the Verde Independent newspaper in Cottonwood, Ariz.
"Everybody had the same impression of her and feeling about her -- her compassion, her friendliness, the smile. She always made children feel very special. She made you feel like you were the most special person when she met you," Bitler said.
Hyde was loving, gentle, bright, generous and warm, she said.
"I've never heard her utter a negative word about somebody. I never heard her complain. She just had a positive, joyful outlook about life. She made you happier when you were around her," Bitler said.
Hyde was a Palo Alto native. She graduated from Cubberley High School in 1978 and from U.C. Santa Barbara in 1983. She worked at Kidder, Peabody & Co. in Palo Alto from 1984 to 1985 as an assistant to a broker. She met her husband at the firm, he said. The couple moved to New York where she worked as a graduate career counselor at Pace University from 1987 to 1990. They returned to Palo Alto that year, and she worked as the office manager at Crate and Barrel for 10 years.
Hyde loved hiking, camping, and the outdoors in general. She was an accomplished runner, having twice competed in the New York City Marathon, her husband said. She was a member of Palo Alto's Community Emergency Response Team (CERT).
Hyde was an avid Stanford football and San Jose Sharks fan, and she always made efforts to arrive before the gates opened to maximize family time at the fun events, he said. She loved studying her family lineage, making a trip to Norway where she visited the town of her ancestors.
But the real profession and joy of her life was her family, her husband said. It was a role she poured her soul and creativity into, he said.
Halloween was her favorite holiday and she used her creativity on costumes for Melanie, he said. She spent countless hours with her daughter at the Christian Music Theater at Grace Lutheran Church.
"She was a wonderful wife and mother. She was thoughtful. She would think about how she said things. She was very thoughtful about the way she approached people," her husband said.
Hyde also found great love and value in tradition, even in the smallest event, Bitler said. It wasn't about grand adventures. It was the little things -- a sandwich or a walk of a ball game -- the shared events that make up a life. And she turned those events into part of her personal and family narrative.
"She really valued her history in Palo Alto and growing up here. She enjoyed running into people in town with their kids that she grew up with, and now her kid's playing with their children," she said.
Hyde is survived by her husband, Larry; her daughter, Melanie; her father, Leland Stewart, all of Palo Alto; and her sister, Louise Stewart (Craig) and niece and nephew Alison and Jason of Santa Barbara. She was preceded in death by her mother, Mary Stewart, a Palo Alto art teacher.
A memorial service will be held at on Saturday, May 17, at 1 p.m. at Grace Lutheran Church, 3149 Waverley St., Palo Alto.
Condolences may be sent to the family at email@example.com.
In lieu of flowers, donations may be made to a charity of choice or to: Melanie M. Hyde (Memo: Education Donation Fund) c/o Wells Fargo Bank, 400 Hamilton Avenue, Suite 100, Palo Alto, Calif. 94301 Attn: Brett Levy.


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Idaho County Highpoints > Bald Mountain Lookout > Climber's Log
Bald Mountain Lookout Climber's Log
[ Sign the Climber's Log ]
Date Climbed: Sep 14, 2014
|For the fourth peak of our day, Paul Michelson and I visited this peak which had multiple valuable aspects (CoHP, P2K, LO, etc.).
|Posted Nov 6, 2014 6:00 pm
Date Climbed: Jun 29, 2009
|Posted Jan 21, 2013 12:30 am
Date Climbed: Aug 3, 2012
|I drove up this one with my son Lance and then followed it up with a drive to the top of Peterson Point in Benewah County. We were back in St. Maries for breakfast at 8:30 am. This was my 11th Idaho Cohp.
|Posted Aug 3, 2012 2:46 pm
|mixed bag
Date Climbed: May 31, 2012
|My daughter and I drove most of the way up Palouse Divide Road before hitting an impassible snow drift about a 1/4 mile before the junction with Bald Mountain Lookout Rd. Hiked up the snow drifts to the summit in fog and drizzle with my daughter on my back. No views today. Planning on hitting this again on my mountain bike via the trails at White Pine.
|Posted May 31, 2012 5:44 pm
|Bald ID
Date Climbed: Sep 19, 2009
|I love a driveup.
|Posted May 9, 2012 12:44 pm
|Drive up
Date Climbed: Nov 11, 2010
|Nice drive up, just after some early November snow. A few weeks later it would not have been accessible by car.
|Posted Aug 31, 2011 3:58 am
|Ah the good ol' days
Date Climbed: Sep 7, 2001
|This was halfway between home and college so many grouse were shot and beers drank on this mtn.
|Posted Feb 10, 2011 11:58 pm
|With moscow mountain
Date Climbed: Jun 20, 2010
|same as Dean but a different year and starting from a different part of the Tri-Cities.
|Posted Nov 12, 2010 9:57 pm
|multiple times
Date Climbed: Jul 5, 1995
|I've been on this summit multiple times, mostly via the road, but I have also hiked up the trail from the south. Incredible views from here. When the air is clear even the Wallowas in Oregon are visible.
|Posted Nov 12, 2010 11:23 am
|A drive up
Date Climbed: Sep 23, 2006
|I combined this one with Moscow Mtn later in the day. The road was good all the way to the lookout and the lookout was being used by some folks who had rented it. I was here because I like lookouts and county highpoints.
|Posted Nov 12, 2010 11:19 am


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The Doors (Central Press/Getty Images)
Before Jim Morrison had the world in the palm of his hands with his band, The Doors, he was simply a college student at Florida State University with a few tricks up his sleeve. Magic tricks to be exact.
In a four-minute clip, which aired earlier this week on PBS' Antiques Roadshow, Morrison's former college roommate, Ed Martin stops by to have Morrison's book, The History of Magic, appraised. The book was a Christmas present from the rocker in 1963.
— Annie Reuter, Radio.com


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I always thought that was "walk on by".
It all becomes clear on use.perl.
Don't be too sure.
Apparently, I wasn't paying too much attention last night. A quick listen on fresh ears validated your words.
I guess. I'm never too sure I get any of them right. But it's fun, nonetheless.


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|Catered Meal, Food Love, Fort Bragg CA, Lifemax, Living Light Culinary Institute, MILA, Raw Chocolate Mousse
|Amber West, California, catered meal, Catering, Dawn Bitterman, family, Friends, Kimmy Everett, Lim Kang, martine lussier, Martinez, Raw Chocolate Mousse, Sean Moylan, Son, Stephanie Schlosser, Student Catered meal, Sunny
Catering the Start of a Beautiful Weekend by amber west
The student catered meal was a total success, with a large turnout of 42 people, including quite a few guests. The food was great (menu below) and the event ran smoothly. It was such a fun night! I attended the dinner as a guest, and was able to see it from a completely new perspective. Many Living Light


text:
© 2007 MLB Advanced Media, L.P. All rights reserved.
Notes: Wedge stands by decision
'Common sense' made Byrd an easy choice for Game 4
By Anthony Castrovince / MLB.com
NEW YORK -- Reporters filed into Eric Wedge's office in the visitors' clubhouse at Yankee Stadium on Monday, and the Indians' manager knew exactly what was coming. "Let me guess what you want to ask me about," Wedge said with a smile. Wedge makes it known that he doesn't read newspapers or Internet accounts of the goings-on with his club, but he nonetheless was well-aware that his decision not to start C.C. Sabathia on three days' rest for Monday's Game 4 of the American League Division Series was drawing plenty of attention -- and debate. So Wedge calmly and carefully laid out a three-pronged rationale for going with veteran Paul Byrd. "One, [Byrd] has won 15 games for us, and we wouldn't be here without him," Wedge began. "Two, if you look at the history of [using pitchers on] three days' rest, it's nothing spectacular. Three, C.C. threw 114 pitches in five innings [in Game 1] and worked as hard as he has all year, and he's pushing 250 innings. We're very consistent with not putting our pitchers in harm's way, especially not our ace and one of the best pitchers in baseball." For Wedge, the decision -- which, essentially, was made before this series even began -- was a matter of "common sense," as he put it. "We're just not going to do it," Wedge said. "For us to even consider it, [Game 1] would have had to have been a very short day for C.C." Nor would Sabathia, who would start Game 5, if necessary, have gotten serious consideration for Monday's start if the Indians were down, 2-1, in the series, rather than up, 2-1. "If you talk about putting a player in harm's way, it doesn't matter where you are in the series," Wedge said. "Up, 2-0; up, 2-1; down, 2-1 -- it doesn't matter." For what it's worth, Sabathia, who has only pitched on three days' rest one time in his seven-year career, sided with the decision, which was agreed upon by all of the organization's higher-ups. "Byrdie is a veteran," Sabathia said. "He's been here, he's been in the postseason, he's been in this position before. He definitely deserves to start, the way he pitched this year. We have confidence that he's going to pitch a good game." And Byrd pitching a good game is likely the only way this topic will be put to rest. Six up, six down: Two rookie relievers have made two appearances for the Tribe thus far in the ALDS, and the Yankees are still waiting to get their first baserunner against them. Rafael Perez worked four perfect innings overall in Games 1 and 2 and has drawn raves from those in the national media. Jensen Lewis, meanwhile, has flown a bit further under the radar, but he's nonetheless pitched a pair of perfect innings, striking out four of the six batters he's faced. [Lewis has] been OK, huh?" Wedge said with a smile. "He's been real good for us the past couple months. He has a prominent role in our bullpen, and he's done a good job for us. He hasn't missed a beat so far here in the postseason."Lewis is merely picking up where he left off in September, which saw him go 1-0 with a 0.69 ERA in 10 appearances. Having a hard-thrower such as Lewis, who can come out of the 'pen and notch a strikeout, is every manager's dream. "Everybody looks for it in a bullpen," Wedge said. "The ability to call on that is definitely a strength." Battery mates: As promised, with Byrd on the mound, backup catcher Kelly Shoppach made the start in the nine hole in Game 4. The next time Byrd and Shoppach aren't paired this season will be the first. "The success they've had over the course of the season is why we've stuck with it," Wedge said. "Early on in the season, we wanted to find a way to get Shoppach in there on a regular basis and get Victor [Martinez] out from behind the plate as much as we could and still keep him in the lineup at first base." But the Indians have found unintended benefits to the pairing, Wedge said. "I think the relationship has just grown between Shop and Paul. Paul has his own way of doing things out there, and he knows himself well and he pitches to his strengths and understands what he needs to do. Now that they've been together so much, Kelly understands his nuances, as well. That's important." The negative, of course, is that having Shoppach in the lineup and moving Martinez to first takes Ryan Garko's bat out of the picture. Garko is batting .364 with a homer and three RBIs in the ALDS. Finding a loophole: The Yankees found a way to add a left-hander -- and a fresh left-hander, at that -- to their bullpen Monday, taking the injured Roger Clemens off their postseason roster and adding Ron Villone. It was a wise move by the Yanks, considering Clemens, who was bothered by a left hamstring strain Sunday night, wouldn't have pitched again in this series, anyway. "That's the rule, and they're taking advantage of it," Wedge said. "I'm sure we would probably do the same thing, if we were in that situation. I don't have any ill will toward that." Tribe tidbits: The Indians' bullpen didn't allow an earned run over the first three games of the series. ... The Yankees pushed their first run across on Sunday night after Martinez made the ill-fated decision to throw to third to try to nab Hideki Matsui after Melky Cabrera hit a swinging bunt in front of the plate. Matsui beat out the throw to put runners on the corners, and the Yankees cashed in on Johnny Damon's RBI single. Wedge said Martinez's decision was a poor one. "He got a little greedy," Wedge said. ... The Indians lost their first playoff game, but Wedge's beard was still intact Monday. "I told Shoppach, 'I'm not shaving again until he plays,'" Wedge said, so consider the beard gone by midweek. ... Beyond the final score, how did the Indians handle the mystique of a postseason game in front of a sellout crowd at Yankee Stadium? "I thought they did a pretty good job," Wedge said. "They've got a nice pace to them. Not much fazes these guys. They rely on each other and derive strength from each other. I think a lot of confidence comes from that, too, regardless of the situation." On deck: No offense to their fans, and no disrespect to their home park, but the Indians have no desire to be at Jacobs Field on Wednesday -- unless, of course, it's for a workout in preparation for the ALCS. But should Monday's Game 4 not turn out the way the club hopes, The Jake would be the setting for Game 5 between the Indians and Yankees on Wednesday night. C.C. Sabathia would get the 8:37 p.m. ET start opposite fellow left-hander Andy Pettitte.
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Anthony Castrovince is a reporter for MLB.com. This story was not subject to the approval of Major League Baseball or its clubs.