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We have deposited Ti-Si-C thin films using high-power impulse magnetron sputtering (HIPIMS) from a Ti3SiC2 compound target. The as-deposited films were composite materials with TiC as the main crystalline constituent. X-ray diffraction and photoelectron spectroscopy indicated that they also contained amorphous SiC, and for films deposited on inclined substrates, crystalline Ti5Si3Cx. The film morphology was dense and flat, while films deposited with dc magnetron sputtering under comparable conditions were rough and porous. Due to the high degree of ionization of the sputtered species obtained in HIPIMS, it is possible to control the film composition, in particular the C content, by tuning the substrate inclination angle, the Ar process pressure, and the bias voltage.
Transition metal diborides are ceramic materials with potential applications as hard protective thin films and electrical contact materials. We investigate the possibility to obtain age hardening through isostructural clustering, including spinodal decomposition, or ordering-induced precipitation in ternary diboride alloys. By means of first-principles mixing thermodynamics calculations, 45 ternary (M1-xMxB2)-M-1-B-2 alloys comprising (MB2)-B-i (M-i = Mg, Al, Sc, Y, Ti, Zr, Hf, V, Nb, Ta) with AlB2 type structure are studied. In particular Al1-xTixB2 is found to be of interest for coherent isostructural decomposition with a strong driving force for phase separation, while having almost concentration independent a and c lattice parameters. The results are explained by revealing the nature of the electronic structure in these alloys, and in particular, the origin of the pseudogap at E-F in TiB2, ZrB2, and HfB2.
The inherent resiliency, hardness and relatively low friction coefficient of the fullerene-like (FL) allotrope of carbon nitride (CNx) thin solid films give them potential in numerous tribological applications. In this work, we study the substitution of N with P to grow FL-CPx to achieve better cross- and inter-linking of the graphene planes, improving thus the materials mechanical and tribological properties. The CNx and CPx films have been synthesized by DC magnetron sputtering. HRTEM have shown the CPx films exhibit a short range ordered structure with FL characteristics for substrate temperature of 300 degrees C and for a phosphorus content of 10-15 at.%. These films show better mechanical properties in terms of hardness and resiliency compared to those of the FL-CNx films. The low water adsorption of the films is correlated to the theoretical prediction for low density of dangling bonds in both, CNx and CPx. First-principles calculations based on Density Functional Theory (DFT) were performed to provide additional insight on the structure and bonding in CNx, CPx and a-C compounds.
We use in-situ heated nanoindentation to investigate the high-temperature nanomechanical properties of epitaxial and textured ZrB2 films deposited by magnetron sputtering. Epitaxial films deposited on 4H-SiC(0001) show a hardness decrease from 47 GPa at room temperature to 33 GPa at 600 °C, while the reduced elastic modulus does not change significantly. High resolution electron microscopy (HRTEM) with selected area electron diffraction of the indented area in a 0001-textured film reveals a retained continuous ZrB2 film and no sign of crystalline phase transformation, despite massive deformation of the Si substrate. HRTEM analysis supports the high elastic recovery of 96% in the films.
Epitaxial growth of rhombohedral boron nitride (r-BN) on different polytypes of silicon carbide (SiC) is demonstrated using thermally activated hot-wall chemical vapour deposition and triethyl boron and ammonia as precursors. With respect to the crystalline quality of the r-BN films, we investigate the influence of the deposition temperature, the precursor ratio (N/B) and the addition of a minute amount of silicon to the gas mixture. From X-ray diffraction and transmission electron microscopy, we find that the optimal growth temperature for epitaxial r-BN on the Si-face of the SiC substrates is 1500 degrees C at a N/B ratio of 642 and silicon needs to be present not only in the gas mixture during deposition but also on the substrate surface. Such conditions result in the growth of films with a c-axis identical to that of the bulk material and a thickness of 200 nm, which is promising for the development of BN films for electronic applications.
Rhombohedral boron nitride (r-BN) layers were grown on sapphire substrate in a hot-wall chemical vapor deposition reactor. Characterization of these layers is reported in details. X-ray diffraction (XRD) is used as a routine characterization tool to investigate the crystalline quality of the films and the identification of the phases is revealed using detailed pole figure measurements. Transmission electron microscopy reveals stacking of more than 40 atomic layers. Results from Fourier Transform InfraRed (FTIR) spectroscopy measurements are compared with XRD data showing that FTIR is not phase sensitive when various phases of sp(2)-BN are investigated. XRD measurements show a significant improvement of the crystalline quality when adding silicon to the gas mixture during the growth; this is further confirmed by cathodoluminescence which shows a decrease of the defects related luminescence intensity.
Rhombohedral Boron Nitride layers were grown on sapphire substrate in a hot-wall CVD reactor. The characterization of those layers is reported and the results are discussed in correlation with the various growth parameters used.
Knowledge on thin films evolution from the early stages of growth is important for the control of quality and properties of the film. Here we present study of the early growth stages and evolution of the crystalline structure of sp2 hybridised Boron Nitride (BN) thin films deposited by chemical vapour deposition from triethyl boron and ammonia. Nucleation of hexagonal BN (h-BN) is observed already at 1200 °C on α-Al2O3 substrate with an AlN buffer layer (AlN/α-Al2O3) while no formation of h-BN is detected when the growth is done on 6H-SiC in a growth temperature range between 1200 °C and 1700 °C. We demonstrate that h-BN grows on AlN/α-Al2O3 exhibiting a layer-by-layer growth mode up to ca. 4 nm followed by a transition to r-BN growth when grown at 1500 °C. The following r-BN growth is suggested to proceed with mixed layer-by-layer and island growth mode; after a thin continuous layer of r-BN, islands formation is favoured leading to a twinned r-BN structure of the film. We find that h-BN does not grow on 6H-SiC substrates instead r-BN nucleates and grows directly as a twinned crystal. The twinning is found to be suppressed by a surface preparation of the SiC substrate with SiH4 prior to BN growth. These results open up for a more controlled epitaxial growth of sp2-BN for future electronic applications.
Boron nitride (BN) is a promising semiconductor material, but its current exploration is hampered by difficulties in growth of single crystalline phase-pure thin films. We compare the growth of sp2-BN by chemical vapor deposition on (0001) 6H-SiC and on (0001) α-Al2O3 substrates with an AlN buffer layer. Polytype-pure rhombohedral BN (r-BN) with a thickness of 200 nm is observed on SiC whereas hexagonal BN (h-BN) nucleates and grows on the AlN buffer layer. For the latter case after a thickness of 4 nm, the h-BN growth is followed by r-BN growth to a total thickness of 200 nm. We find that the polytype of the sp2-BN films is determined by the ordering of Si-C or Al-N atomic pairs in the underlying crystalline structure (SiC or AlN). In the latter case the change from h-BN to r-BN is triggered by stress relaxation. This is important for the development of BN semiconductor device technology.
The influence of silicon on the growth of epitaxial rhombohedral boron nitride (r-BN) films deposited on sapphire (0001) by chemical vapor deposition is investigated. X-ray diffraction measurements and secondary ion mass spectrometry show that silicon favors the formation of r-BN and is incorporated into the film.
Knowledge of the structural evolution of thin films, starting by the initial stages of growth, is important to control the quality and properties of the film. The authors present a study on the initial stages of growth and the temperature influence on the structural evolution of sp(2) hybridized boron nitride (BN) thin films during chemical vapor deposition (CVD) with triethyl boron and ammonia as precursors. Nucleation of hexagonal BN (h-BN) occurs at 1200 degrees C on alpha-Al2O3 with an AlN buffer layer (AlN/alpha-Al2O3). At 1500 degrees C, h-BN grows with a layer-by-layer growth mode on AlN/alpha-Al2O3 up to similar to 4 nm after which the film structure changes to rhombohedral BN (r-BN). Then, r-BN growth proceeds with a mixed layer-by-layer and island growth mode. h-BN does not grow on 6H-SiC substrates; instead, r-BN nucleates and grows directly with a mixed layer-by-layer and island growth mode. These differences may be caused by differences in substrate surface temperature due to different thermal conductivities of the substrate materials. These results add to the understanding of the growth process of sp(2)-BN employing CVD. (C) 2015 American Vacuum Society.
Epitaxial growth of sp(2)-hybridized boron nitride (sp(2) BN) films on sapphire substrates is demonstrated in a hot wall chemical vapor deposition reactor at the temperature of 1500 degrees C, using triethyl boron and ammonia as precursors. The influence of the main important process parameters, temperature, N/B ratio, B/H-2 ratio, and carrier gas composition on the quality of the grown layers is investigated in detail. X-ray diffraction shows that epitaxial rhombohedral BN (r-BN) film can be deposited only in a narrow process parameter window; outside this window either turbostratic-BN or amorphous BN is favored if BN is formed. In addition, a thin strained AlN buffer layer is needed to support epitaxial growth of r-BN film on sapphire since only turbostratic BN is formed on sapphire substrate. The quality of the grown film is also affected by the B/H-2 ratio as seen from a change of the spacing between the basal planes as revealed by X-ray diffraction. Time-of-flight elastic recoil detection analysis shows an enhancement of the C and O impurities incorporation at lower growth temperatures. The gas phase chemistry for the deposition is discussed as well as the impact of the growth rate on the quality of the BN film.
Epitaxial growth of sp2-hybridized boron nitride (BN) using chemical vapour deposition, with ammonia and triethyl boron as precursors, is enabled on sapphire by introducing an aluminium nitride (AlN) buffer layer. This buffer layer is formed by initial nitridation of the substrate. Epitaxial growth is verified by X-ray diffraction measurements in Bragg–Brentano configuration, pole figure measurements and transmission electron microscopy. The in-plane stretching vibration of sp2-hybridized BN is observed at 1366 cm–1 from Raman spectroscopy. Time-of-flight elastic recoil detection analysis confirms almost perfect stoichiometric BN with low concentration of carbon, oxygen and hydrogen contaminations.
Ti3 Si C2 thin films were synthesized by magnetron sputtering from Ti3 Si C2 and Ti targets. Sputtering from a Ti3 Si C2 target alone resulted in films with a C content of ∼50 at. % or more, due to gas-phase scattering processes and differences in angular and energy distributions between species ejected from the target. Addition of Ti to the deposition flux from a Ti3 Si C2 target is shown to bind the excess C in Ti Cx intergrown with Ti3 Si C2 and Ti4 Si C3. Additionally, a substoichiometric Ti Cx buffer layer is shown to serve as a C sink and enable the growth of Ti3 Si C2.
This article is a Critical review of the M(n + 1)AX(n) phases ("MAX phases", where n = 1, 2, or 3) from a materials science perspective. MAX phases are a class of hexagonal-structure ternary carbides and nitrides ("X") of a transition metal ("M") and an A-group element. The most well known are Ti2AlC, Ti3SiC2, and Ti4AlN3. There are similar to 60 MAX phases with at least 9 discovered in the last five years alone. What makes the MAX phases fascinating and potentially useful is their remarkable combination of chemical, physical, electrical, and mechanical properties, which in many ways combine the characteristics of metals and ceramics. For example, MAX phases are typically resistant to oxidation and corrosion, elastically stiff, but at the same time they exhibit high thermal and electrical conductivities and are machinable. These properties stem from an inherently nanolaminated crystal structure, with M1 + nXn slabs intercalated with pure A-element layers. The research on MAX phases has been accelerated by the introduction of thin-film processing methods. Magnetron sputtering and arc deposition have been employed to synthesize single-crystal material by epitaxial growth, which enables studies of fundamental material properties. However, the surface-initiated decomposition of M(n + 1)AX(n) thin films into MX compounds at temperatures of 1000-1100 degrees C is much lower than the decomposition temperatures typically reported for the corresponding bulk material. We also review the prospects for low-temperature synthesis, which is essential for deposition of MAX phases onto technologically important substrates. While deposition of MAX phases from the archetypical Ti-Si-C and Ti-Al-N systems typically requires synthesis temperatures of similar to 800 degrees C, recent results have demonstrated that V2GeC and Cr2AlC can be deposited at similar to 450 degrees C. Also, thermal spray of Ti2AlC powder has been used to produce thick coatings. We further treat progress in the use of first-principle calculations for predicting hypothetical MAX phases and their properties. Together with advances in processing and materials analysis, this progress has led to recent discoveries of numerous new MAX phases such as Ti4SiC3, Ta4AlC3. and Ti3SnC2. Finally, important future research directions are discussed. These include charting the unknown regions in phase diagrams to discover new equilibrium and metastable phases, as well as research challenges in understanding their physical properties, such as the effects of anisotropy, impurities, and vacancies on the electrical properties, and unexplored properties such as Superconductivity, magnetism, and optics.
We have synthesized Ti–Si–C nanocomposite thin films by dc magnetron sputtering from a Ti3SiC2 compound target in an Ar discharge on Si(100), Al2O3(0001), and Al substrates at temperatures from room temperature to 300 °C. Electron microscopy, x-ray diffraction, and x-ray photoelectron spectroscopy showed that the films consisted of nanocrystalline (nc-) TiC and amorphous (a-) SiC, with the possible presence of a small amount of noncarbidic C. The growth mode was columnar, yielding a nodular film-surface morphology. Mechanically, the films exhibited a remarkable ductile behavior. Their nanoindentation hardness and E-modulus values were 20 and 290 GPa, respectively. The electrical resistivity was 330 µ cm for optimal Ar pressure (4 mTorr) and substrate temperature (300 °C). The resulting nc-TiC/a-SiC films performed well as electrical contact material. These films' electrical-contact resistance against Ag was remarkably low, 6 µ at a contact force of 800 N compared to 3.2 µ for Ag against Ag. The chemical stability of the nc-TiC/a-SiC films was excellent, as shown by a Battelle flowing mixed corrosive-gas test, with no N, Cl, or S contaminants entering the bulk of the films.
Epitaxial TiC/SiC multilayers were grown by magnetron sputtering at a substrate temperature of 550 °C, where SiC is normally amorphous. The epitaxial TiC template induced growth of cubic SiC up to a thickness of ~2 nm. Thicker SiC layers result in a direct transition to growth of the metastable amorphous SiC followed by renucleation of nanocrystalline TiC layers
Ti–Si–C–Ag nanocomposite coatings consisting of nanocrystalline TiC in an amorphous Si matrix with segregated Ag were deposited by dual magnetron sputtering from Ti3SiC2 and Ag targets. As evidenced by X-ray diffraction, scanning electron microscopy, and transmission electron microscopy, for Ag contents below 10 at.%, the Ag forms 10 nm large crystallites that are homogeneously distributed in the films. For higher Ag contents, coalescence during growth results in the formation of > 100 nm Ag islands on the film surface. The electrical resistivity of the coatings was measured in a four-point-probe setup, and ranged from 340 μΩcm (for Ti–Si–C coatings without Ag) to 40 μΩcm (for high Ag content).
Ti3SiC2 films were grown on polycrystalline Ti3SiC2 bulk substrates using DC magnetron sputtering. The crystallographic orientation of the film grains is shown to be determined by the respective substrate-grain orientation through homoepitaxial MAX-phase growth. For a film composition close to Ti:Si:C=3:1:2, the films predominantly consist of MAX phases, both Ti3SiC2 and the metastable Ti4SiC3. Lower Si content resulted in growth of TiC with Ti3SiC2 as a minority phase. Thus, MAX-phase heterostructures with preferred crystallographic relationships can also be realized.
Ta4AlC3, a new member of the Mn+1AXn-phase family, has been synthesized and characterized (n = 1-3, M = early transition metal, A = A-group element, and X = C and/or N). Phase determination by Rietveld refinement of synchrotron X-ray diffraction data shows that Ta4AlC3 belongs to the P63/mmc space group with a and c lattice parameters of 3.10884 ± 0.00004 Å and 24.0776 ± 0.0004 Å, respectively. This is shown to be the α-polymorph of Ta4AlC3, with the same structure as Ti4AlN3. Lattice imaging by high-resolution transmission electron microscopy demonstrates the characteristic MAX-phase stacking of α-Ta4AlC3. Three modes of mechanical deformation of α-Ta4AlC3 are observed: lattice bending, kinking and delamination. © 2007.
A recent paper by Hu et al. claimed synthesis of the MAX-phase Ti3SiC2at 100-300 °C using pulsed laser deposition. In this comment, we find that the evidence presented by Hu et al. is insufficient to show Ti3SiC2 formation. In fact, there is a simpler interpretation of their results from X-ray diffraction and transmission electron microscopy, namely that the material produced is a cubic TiC-based compound.
A recent paper by Hu et al. claimed synthesis of the MAX-phase Ti3SiC2 at 100 - 300 degreesC using pulsed laser deposition. In this comment, we find that the evidence presented by Hu et al. is insufficient to show Ti3SiC2 formation. In fact, there is a simpler interpretation of their results from X-ray diffraction and transmission electron microscopy, namely that the material produced is a cubic TiC-based compound.
Photoemissionstudies using synchrotron radiation have been performed on epitaxial Ti3SiC2(0001)and compound nanocrystalline (nc-)TiC/amorphous (a-)SiC thin films deposited by magnetronsputtering. As-introduced samples were found to be covered by surfaceoxides, SiOx and TiOx. These oxides could be removed byin-situ annealing to ~1000 °C. For as-annealed Ti3SiC2(0001), surface Si wasobserved and interpreted as originating from decomposition of Ti3SiC2 throughSi out-diffusion. For nc-TiC/a-SiC annealed in situ to ~1000 °C, thesurface instead exhibited a dominant contribution from graphitic carbon, alsowith the presence of Si, due to C and Siout-diffusion from the a-SiC compound or from grain boundaries.
We have investigated the electrical resistivity of (0001)-oriented Tin+1ACn (A = Si, Ge, Sn, n = 1–3) thin films deposited by magnetron sputtering onto Al2O3(0001) substrates at temperatures ranging from 500 to 950 °C. Four-point-probe measurements show that all films are good conductors with resistivity values of ∼21–51 μΩ cm for Ti–Si–C films, ∼15–50 μΩ cm for Ti–Ge–C films, and ∼46 μΩ cm for Ti2SnC. We find a general trend of decreasing resistivity with decreasing n for the Ti–Si–C and Ti–Ge–C systems due to the increased metallicity obtained with increasing density of A-element layers. We also show that crystalline quality and competitive growth of impurity phases affect the measured resistivity values. The effect of a given impurity phase largely depends on its location in the sample. Specifically, a TiCx layer in the center of the film constricts the current flow and results in an increased measured resistivity value. However, TiCx transition or seed layers at the substrate–film interface as well as surface segregation of Ge and Ti5Ge3Cx (for Ti–Ge–C) have only little effect on the measured resistivity values. For the Ti–Sn–C system, the resistivity is mainly influenced by the segregation of metallic Sn, yielding a wide spread in the measured values ranging from 20–46 μΩ cm, in the order of increased film purity.
Ti3SiC2(0 0 0 1) thin films prepared by magnetron sputtering were investigated for their response to tribomechanical strain induced during ball-on-disk experiments with 6 mm alumina balls and scratch tests with a 1 μm cono-spherical diamond tip. Normal loads of 100 μN to 0.24 N were applied resulting in a friction coefficient of 0.1 for the low loads. With higher applied normal loads, the friction coefficient increased up to 0.8. Analysis of the wear tracks using atomic force microscopy, scanning electron microscopy, and Raman spectroscopy revealed excessive debris resulting in third-body abrasion and fast wear. The formation of the debris can be explained by the generation of subsurface delamination cracks on basal planes. Subsequent kink formation obstructs the ball movement which results in the removal of the kinked film parts.
Epitaxial Ti3SiC2(0001) thin films have been deposited by dc magnetron sputtering from three elemental targets of Ti, C, and Si onto MgO(111) and Al2O3(0001) substrates at temperatures of 800–900 °C. This process allows composition control to synthesize Mn+1AXn (MAX) phases (M: early transition metal; A: A-group element; X: C and∕or N; n=1–3) including Ti4SiC3. Depositions on MgO(100) substrates yielding the Ti–Si–C MAX phases with (105), as the preferred orientation. Samples grown at different substrate temperatures, studied by means of transmission electron microscopy and x-ray diffraction investigations, revealed the constraints of Ti3SiC2 nucleation due to kinetic limitations at substrate temperatures below 700 °C. Instead, there is a competitive TiCx growth with Si segregation to form twin boundaries or Si substitutional incorporation in TiCx. Physical properties of the as-deposited single-crystal Ti3SiC2 films were determined. A low resistivity of 25 μΩ cm was measured. The Young's modulus, ascertained by nanoindentation, yielded a value of 343–370 GPa. For the mechanical deformation response of the material, probing with cube corner and Berkovich indenters showed an initial high hardness of almost 30 GPa. With increased maximum indentation loads, the hardness was observed to decrease toward bulk values as the characteristic kink formation sets in with dislocation ordering and delamination at basal planes.
The thermal stability of Ti3SiC2(0 0 0 1) thin films is studied by in situ X-ray diffraction analysis during vacuum furnace annealing in combination with X-ray photoelectron spectroscopy, transmission electron microscopy and scanning transmission electron microscopy with energy dispersive X-ray analysis. The films are found to be stable during annealing at temperatures up to ∼1000 °C for 25 h. Annealing at 1100–1200 °C results in the rapid decomposition of Ti3SiC2 by Si out-diffusion along the basal planes via domain boundaries to the free surface with subsequent evaporation. As a consequence, the material shrinks by the relaxation of the Ti3C2 slabs and, it is proposed, by an in-diffusion of O into the empty Si-mirror planes. The phase transformation process is followed by the detwinning of the as-relaxed Ti3C2 slabs into (1 1 1)-oriented TiC0.67 layers, which begin recrystallizing at 1300 °C. Ab initio calculations are provided supporting the presented decomposition mechanisms.
The microstructure of stoichiometric ZrB2.0 and B over-stoichiometric ZrB2.5 thin films has been studied using atom probe tomography (APT), X-ray diffraction, and transmission electron microscopy. Both films consist of columnar ZrB2 grains with AlB2-type crystal structure. The narrow stoichiometry range of ZrB2 results in the presence of separate disordered B-rich boundaries even in ZrB2.0. At higher average B content, specifically ZrB2.5, the formation of a continuous network around the sides of the ZrB2 columns is promoted. In addition, the APT field evaporation characteristics of ZrB2 and its influence on the measured local composition has been studied and compared to the average composition from elastic recoil detection analysis (ERDA). Differences in the measured average compositions of the two techniques are explained by the APT detector dead-time/space. A new pile-up pairs correction procedure based on co-evaporation correlation data was thus employed here for the APT data and compared with the 10B-method (the B equivalence of the 13C-method), as well as the combination of both methods. In ZrB2.0, all of the applied compositional correction methods were found to reduce the compositional difference when appropriate isotopic abundances were used. In ZrB2.5, the inhomogeneity of the film likely increased the local APT composition to such an extent that even conservative correction procedures overestimated the B content compared to the ERDA reference. The strengths of the pile-up pairs correction compared the 10B and the combined methods are higher precision, due to it being less dependent on the accuracy of estimated isotopic abundances, and that the correction itself is not dependent on careful background correction of the mass spectrum.
Sputter deposition from a Ti2AlC target was found to yield Ti-Al-C films with a composition that deviates from the target composition of 2:1:1. For increasing substrate temperature from ambient to 1000 degrees C, the Al content decreased from 22 at.% to 5 at.%, due to re-evaporation. The C content in as-deposited films was equal to or higher than the Ti content. Mass spectrometry of the plasma revealed that the Ti and Al species were essentially thermalized, while a large fraction of C with energies andgt;4 eV was detected. Co-sputtering with Ti yielded a film stoichiometry of 2:0.8:0.9 for Ti:Al:C, which enabled growth of Ti2AlC. These results indicate that an additional Ti flux balances the excess C and therefore provides for more stoichiometric Ti2AlC synthesis conditions.
High Velocity Oxy-Fuel has been utilized to spray coatings from Ti2AlC (MAXTHAL 211®) powders. X-ray diffraction showed that the coatings consist predominantly of Ti2AlC with inclusions of the phases Ti3AlC2, TiC, and Al–Ti alloys. The fraction of Ti2AlC in coatings sprayed with a powder size of 38 μm was found to increase with decreasing power of the spraying flame as controlled by the total gas flow of H2 and O2. A more coarse powder (56 μm) is less sensitive to the total gas flow and retains higher volume fraction of MAX-phase in the coatings, however, at the expense of increasing porosity. X-ray pole figure measurements showed a preferred crystal orientation in the coatings with the Ti2AlC (000l) planes aligned to the substrate surface. Bending tests show a good adhesion to stainless steel substrates and indentation yields a hardness of 3–5 GPa for the coatings sprayed with a powder size of 38 μm.
Phosphorus-carbide (CPx) thin films have been deposited by unbalanced reactive magnetron sputtering and investigated by TEM, XPS, SEM, ERDA, Raman scattering spectroscopy, nanoindentation testing, and four-point electrical probe techniques. As-deposited films with x=0.1 are electron amorphous with elements of FL structure and high mechanical resiliency with hardness of 34.4 GPa and elastic recovery of 72%. The electrical resistivity of the films are in the range 0.4-1.7 Ωcm for CP0.027, 1.4-22.9 Ωcm for CP0.1, and lower than the minimal value the four-point probe is able to detect for CPx with x≥0.2.
Phosphorus-carbide, CPx (0.025≤x≤0.1) thin films have beensynthesized by magnetron sputtering from pressed graphite-phosphorustargets. The films were characterized by X-ray photoelectron spectroscopy,transmission electron microscopy and diffraction, andnanoindentation. CP0.02 exhibits C-P bonding in an amorphous structure with elements of curved grapheneplanes, yielding a material with unique short range order. These features are consistent with what has been predicted by our results of theoreticallymodeled synthetic growth of CPx. The films are mechanicallyresilient with hardness up to 24 GPa and elastic recovery upto 72%.
Inherently nanostructured CPx compounds were studied by first-principles calculations. Geometry optimizations and cohesive energy comparisons show stability for C3P, C2P, C3P2, CP, and P4 (P2) species in isolated form as well as incorporated in graphene layers. The energy cost for structural defects, arising from the substitution of C for P and intercalation of P atoms in graphene, was also evaluated. We find a larger curvature of the graphene sheets and a higher density of cross-linkage sites in comparison to fullerene-like (FL) CNx, which is explained by differences in the bonding between P and N. Thus, the computational results extend the scope of fullerene-like thin film materials with FL-CPx and provide insights for its structural properties.
A new carbon-based compound: CSxFy was addressed by density functional theory calculations and synthesized by reactive magnetron sputtering. Geometry optimizations and energy calculations were performed on graphene-like model systems containing sulfur and fluorine atoms. It is shown that [S+F] concentrations in the range of 0−10 at.%, structural ordered characteristics similar to graphene pieces containing ring defects are energetically feasible. The modeling predicts that CSxFy thin films with graphite and fullerene-like characteristics may be obtained for the mentioned concentration range. Accordingly, thin films were synthesized from a graphite solid target and sulfur hexafluoride as reactive gas. In agreement with the theoretical prediction, transmission electron microscopy characterization and selected area electron diffraction confirmed the presence of small ordered clusters with graphitic features in a sample containing 0.4 at.% of S and 3.4 at.% of F.
The formation and structural evolution of fullerene-like (FL) carbon phosphide (CPx) during synthetic growth were studied by first-principles calculations. Geometry optimizations and comparison between the cohesive energies suggest stability for solid FL-CPx compounds. In comparison with fullerene-like carbon nitride, higher curvature of the graphene sheets and higher density of cross-linkages between them is predicted and explained by the different electronic properties of P and N. Cage-like and onion-like structures, both containing tetragons, are found to be typical for fullerene-like CPx. Segregation of P is predicted at fractions exceeding ~20 at.%.
Ti-Si-C-Ag-Pd and Ti-Si-C-Ag nanocomposite coatings were deposited by magnetronsputtering on Cu substrates with an electroplated Ni layer. Analytical electronmicroscopy and x-ray diffraction show that the nanocomposites consist of TiC,Ag:Pd, and amorphous SiC. The contact resistance of these coatings against aspherical Au-Co surface was measured for applied contact force up 0 to 5 N. Ti-Si-CAg-Pd coatings with a Ag:Pd strike coating has ~10 times lower contact resistance atcontact forces below 1 N (~10 mΩ at ~0.1N), and ~2 times lower for contact forcesaround 5 N (<1 mΩ at 5 N), compared to the Ti-Si-C-Ag coating.
Sputtered Ni and Ti layers were investigated as substitutes for electroplated Ni as adiffusion barrier between Ti-Si-C and Ti-Si-C-Ag nanocomposite coatings and Cu orCuSn substrates. Samples were subjected to thermal annealing studies by exposure to400 ºC during 11 h. Dense diffusion barrier and coating hindered Cu from diffusing tothe surface. This condition was achieved for electroplated Ni in combination withmagnetron-sputtered Ti-Si-C and Ti-Si-C-Ag layers deposited at 230 ºC and 300 ºC,and sputtered Ti or Ni layers in combination with Ti-Si-C-Ag deposited at 300 ºC.
A study of the nucleation and crystal structure evolution at the early stages of the growth of sp(2)-BN thin films on 6H-SiC and alpha-Al2O3 substrates is presented. The growth is performed at low pressure and high temperature in a hot wall CVD reactor, using ammonia and triethylboron as precursors, and H-2 as carrier gas. From high-resolution transmission electron microscopy and X-ray thin film diffraction measurements we observe that polytype pure rhombohedral BN (r-BN) is obtained on 6H-SiC substrates. On alpha-Al2O3 an AlN buffer obtained by nitridation is needed to promote the growth of hexagonal BN (h-BN) to a thickness of around 4 nm followed by a transition to r-BN growth. In addition, when r-BN is obtained, triangular features show up in plan-view scanning electron microscopy which are not seen on thin h-BN layers. The formation of BN after already one minute of growth is confirmed by X-ray photoelectron spectroscopy. (C) 2016 The Japan Society of Applied Physics
The theory of the effects of substitutions on the phase stabilities of Ti1-xAlxN was discussed. The substitution that increased the thermal stability of the NaCl structure of Ti1-xAlxN at high Al content was elaborated. Some possible avenues for such stabilization were presented and the substitution with nonmetal C and Si, and metal V, Cr and Mn was found to be most promising.
Amorphous silicon carbonitride thin films for biomedical applications were deposited in an industrial coating unit from a silicon target in different argon/nitrogen/acetylene mixtures by reactive high power impulse magnetron sputtering (rHiPIMS). The effects of acetylene (C2H2) flow rate, substrate temperature, substrate bias voltage, and HiPIMS pulse frequency on the film properties were investigated. Low C2H2 flow rates (<10 sccm) resulted in silicon nitride-like film properties, seen from a dense morphology when viewed in cross-sectional scanning electron microscopy, a hardness up to ∼22 GPa as measured by nanoindentation, and Si-N bonds dominating over Si-C bonds in X-ray photoelectron spectroscopy core-level spectra. Higher C2H2 flows resulted in increasingly amorphous carbon-like film properties, with a granular appearance of the film morphology, mass densities below 2 g/cm3 as measured by X-ray reflectivity, and a hardness down to 4.5 GPa. Increasing substrate temperatures and bias voltages resulted in slightly higher film hardnesses and higher compressive residual stresses. The film H/E ratio showed a maximum at film carbon contents ranging between 15 and 30 at.% and at elevated substrate temperatures from 340 °C to 520 °C.
Silicon oxynitride thin films were synthesized by reactive high power impulse magnetron sputtering of silicon in argon/nitrous oxide plasmas. Nitrous oxide was employed as a single-source precursor supplying oxygen and nitrogen for the film growth. The films were characterized by elastic recoil detection analysis, x-ray photoelectron spectroscopy, x-ray diffraction, x-ray reflectivity, scanning electron microscopy, and spectroscopic ellipsometry. Results show that the films are silicon rich, amorphous, and exhibit a random chemical bonding structure. The optical properties with the refractive index and the extinction coefficient correlate with the film elemental composition, showing decreasing values with increasing film oxygen and nitrogen content. The total percentage of oxygen and nitrogen in the films is controlled by adjusting the gas flow ratio in the deposition processes. Furthermore, it is shown that the film oxygen-to-nitrogen ratio can be tailored by the high power impulse magnetron sputtering-specific parameters pulse frequency and energy per pulse. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
Silicon oxynitride (SiOxNy, x = 0.2 − 1.3, y = 0.2 − 0.7) thin films were synthesized by reactive high power impulse magnetron sputtering from a pure silicon target in Ar/N2O atmospheres. It is found that the composition of the material can be controlled by the reactive gas flow and the average target power. X-ray photoelectron spectroscopy (XPS) shows that high average powers result in more silicon-rich films, while lower target powers yield silicon-oxide-like material due to more pronounced target poisoning. The amount of nitrogen in the films can be controlled by the percentage of nitrous oxide in the working gas. The nitrogen content remains at a constant level while the target is operated in the transition region between metallic and poisoned target surface conditions. The extent of target poisoning is gauged by the changes in peak target current under the different deposition conditions. XPS also shows that varying concentrations and ratios of oxygen and nitrogen in the films result in film chemical bonding structures ranging from silicon-rich to stoichiometric silicon oxynitrides having no observable Si−Si bond contributions. Spectroscopic ellipsometry shows that the film optical properties depend on the amount and ratio of oxygen and nitrogen in the compound, with film refractive indices measured at 633 nm ranging between those of SiO2 and Si3N4.
Thin epitaxial TiC and VC films and superlattices have been deposited on MgO(001) by simultaneous sputtering of the metals and evaporation of C-60. It was found that epitaxial growth conditions for TiC could be maintained down to a temperature of 100 degreesC, while the epitaxial growth of VC required 200 degreesC, Epitaxial VC films were completely relaxed at all growth temperatures, while a change from a relaxed to a strained growth behavior was observed for TiC films. The structural quality of the TiC films was better than for the VC films. A general observation was that a plasma-assisted deposition process yields films with a higher quality and allows epitaxial growth at lower temperatures than for a pure coevaporation process.
We have grown single-crystal thin films of Ti2GeC and Ti3GeC2 and a new phase Ti4GeC3, as well as two new intergrown MAX-structures, Ti5Ge2C3 and Ti7Ge2C5. Epitaxial films were grown on Al2O3(0001) substrates at 1000 °C using direct current magnetron sputtering. X-ray diffraction shows that Ti–Ge–C MAX-phases require higher deposition temperatures in a narrower window than their Ti–Si–C correspondences do, while there are similarities in phase distribution. Nanoindentation reveals a Young's modulus of 300 GPa, lower than that of Ti3SiC2. Four-point probe measurements yield resistivity values of 50–200 μΩcm. The lowest value is obtained for phase-pure Ti3GeC2(0001) films.
We report that magnetron sputtering can be applied to synthesize MAX-phase films of several systems including Ti–Si–C, Ti–Ge–C, Ti–Al–C, and Ti–Al–N. In particular, epitaxial films of the known phases Ti3SiC2, Ti3GeC2, Ti2GeC, Ti3AlC2, Ti2AlC, and Ti2AlN as well as the newly discovered thin film phases Ti4SiC3, Ti4GeC3 and intergrown structures can be deposited at 900–1000 °C on Al2O3(0001) and MgO(111) pre-seeded with TiC or Ti(Al)N. From XTEM and AFM we suggest a growth and nucleation model where MAX-phase nucleation is initiated at surface steps or facets on the seed layer and followed by lateral growth. Differences between the growth behavior of the systems with respect to phase distribution and phase stabilities are discussed. Characterization of mechanical properties for Tin+1Si–Cn films with nanoindentation show decreased hardness from about 25 to 15 GPa upon penetration of the basal planes with characteristic large plastic deformation with pile up dependent on the choice of MAX material. This is explained by cohesive delamination of the basal planes and kink band formation, in agreement with the observations made for bulk material. Measurements of the electrical resistivity for Ti–Si–C and Ti–Al–N films with four-point probe technique show values of 30 and 39 μΩ cm, respectively, comparable to bulk materials.
Reactive sputtering by high power impulse magnetron sputtering (HiPIMS) and direct current magnetron sputtering (DCMS) of a Zr target in Ar/H-2 plasmas was employed to deposit Zr-H films on Si(100) substrates, and with H content up to 61 at.% and O contents typically below 0.2 at.% as determined by elastic recoil detection analysis. X-ray photoelectron spectroscopy reveals a chemical shift of similar to 0.7 eV to higher binding energies for the Zr-H films compared to pure Zr films, consistent with a charge transfer from Zr to H in a zirconium hydride. X-ray diffraction shows that the films are single-phase delta-ZrH2 (CaF2 type structure) at H content greater thansimilar to 55 at.% and pole figure measurements give a 111 preferred orientation for these films. Scanning electron microscopy cross-section images show a glasslike microstructure for the HiPIMS films, while the DCMS films are columnar. Nanoindentation yield hardness values of 5.5-7 GPa for the delta-ZrH2 films that is slightly harder than the similar to 5 GPa determined for Zr films and with coefficients of friction in the range of 0.12-0.18 to compare with the range of 0.4-0.6 obtained for Zr films. Wear resistance testing show that phase-pure delta-ZrH2 films deposited by HiPIMS exhibit up to 50 times lower wear rate compared to those containing a secondary Zr phase. Four-point probe measurements give resistivity values in the range of similar to 100-120 mu Omega cm for the delta-ZrH2 films, which is slightly higher compared to Zr films with values in the range 70-80 mu Omega cm.
Thin films of beta-Ta and alpha-Cr were deposited on Si(1 0 0) and 1000 angstrom SiO2/Si(1 0 0), by high power impulse magnetron sputtering (HiPIMS) and direct current magnetron sputtering (dcMS) in hydrogen-containing plasmas. The films were characterized by X-ray photoelectron spectroscopy (XPS), X-ray diffraction, scanning electron microscopy, elastic recoil detection analysis, and four-point probe measurements. The results showed that 001-oriented beta-Ta films containing up to similar to 8 at% hydrogen were obtained with HiPIMS, albeit with no chemical shift evident in XPS. The 110 oriented alpha-Cr films display a hydrogen content less than the detection limit of 1 at%, but H-2 favors the growth of high-purity films for both metals. The beta-Ta films deposited with dcMS are columnar, which seems independent of H-2 presence in the plasma, while the films grown by HIPIMS are more fine-grained. The latter type of microstructure was present for the alpha-Cr films and found to be independent on choice of technique or hydrogen in the plasma. The beta-Ta films show a resistivity of similar to 140-180 mu Omega cm, while alpha-Cr films exhibit values around 30 mu Omega cm; the lowest values obtained for films deposited by HiPIMS and with hydrogen in the plasma for both metals.


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comment: There may bo scattered protests, but the security forces will keep them under control. Solidarity leaders have not been calling for such demonstrations, which they evidently view as premature and destined to fail. As in the past, the security forces may provoke some violence to provide further justif law and to enhance their own position.
U March
Approved tor Release
Pat, mi, mmOriginal document.

subset: commoncrawl


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Leicestershire Campsites
Leicestershire Campsites and Holiday Parks
Originally a Danish settlement, Ashby acquired its full name with the arrival of the Breton family of La Souche in the 12th century. The town became a spa in the 19th century, but contains Elizabethan half-timbered houses as well as bow-fronted Georgian shops. Behind the main street are the ruins of the 15th-century castle. Nearby the Tournament field was the setting for the pageant in Scott's Ivanoe.
Looking across the Vale of Belvoir (pronounced 'Beever') towards the Leicestershire wolds, the castle stands on a ridge surrounded by dense woodland. In the 16th unded century the original 11th-century fortress was given to the Manners family, who later became Dukes of Rutland It's present mocked-medieval appearance is largely the early 19th century work of Jamgs Wyatt Th interior is famous for its Gobelin tapestries and for its paintings which include works by Van Dyck, Gainsborough and Holbein. It alsohouses the Regimental Museum of the 17th and 21st Lancers. The grounds – particularly the water gardens are splendid and regular demonstrations of jousting and mock battles are held.
Leicester's development from a small county town to the sprawling industrial city of today was prompted by the coming of the railway in the 19th century, for this provided easy access to the coalfields. The stocking frame was invented in Leicester, where hosiery and footwear are still strong trades. At the height of the Industrial Revolution in 1841, Thomas Cook's first organised expedition took place from here to Loughborough.
There was a settlement here in Roman times: the Jewry Wall is believed to date from AD 130, and excavations have also revealed a public bath and shops. Of the Norman castle only motte and great hall remain, the latter used as a law court. St Mary de Castro, the church of the castle, is also basically Norman, and St Martin's Cathedral has its origin in a 13th century church. The richness of the city's history is reflected in its many museums: Newarke House Museum concentrates on the period from 1500 to the present day, while the Leicestershire Museum and Art Gallery includes exhibitions on ceramics, natural history and Egyptology, together with a notable collection of German Expressionist paintings.
The Museum of the Royal Leicestershire Regiment is housed in the 15th-century Magazine Gateway, and the Wygston's House Museum of English Costume in a building which is basically late medieval. Giant beam engines are displayed in the Leicester Museum of Technology, and the results of various digs in the Jewry Wall Museum. The medieval Guildhall survives, as does the 18th-century mansion of Belgrave Hall. Leicester University founded the country's only School of English Local History.
Today Loughborough is involved in hosiery manufacture and engineering industries, but it is internationally famous for its bell foundry, brought here from Oxfordby John Taylor in 1858 and responsible for casting Great Paul for St Paul's Cathedral. All Saints Church (dating from the 14th century, but restored by Sir Gilbert Scott in the 19th) has memorials to the Taylor family and, appropriately, a peal of 10 bells. A Victory Peal of 5,041 changes was rung here in 1919, and the War Memorial built in Queen's Park in 1923 took the form of a tower containing a carillon of 47 bells.
Loughborough Central contains a museum and locomotive depot.
John Wyclif, the reformer who attacked the wrongful use of papal power in politics, was rector at the parish church of Lutterworth from 1374-84 and is commemorated by an obelisk. The church itself was much restored in the 19th century, a massive tower replacing the original spire, but it still contains some 15th century wall paintings. Wyclif worked on the first English translation of the Bible here. He was buried in the churchyard, but his body was later exhumed, cremated and the ashes cast into the River Swift.
Market Bosworth
A tree-lined avenue marks the entrance to this small stone-built town, where markets have been held since 1285. The present market is one of only seven in England which are privately owned. The Dixie family came to live in the local manor house in 1567 and are still there, the parish church has many Dixie memorials and the local school was endowed by the family.
Market Bosworth lies 1 mile north of Bosworth Field, where in 1485 the Wars of the Roses were brought to a close when Richard III was slain by Henry Tudor. The battlefield has a battle trail and an information centre.
Market Harborough
Deep in hunting country in this case, the Fernie Hunt, Market Harborough was the creation of Henry II. Some say that the church of St Dionysius was founded by John of Gaunt though the decorations and the Perpendicular style of architecture suggests that this is unlikely. Every November, the bells are rung to celebrate the rescue of a merchant who lost his way on the Welland marshes in 1500. The ringers receive the modest reward of 'one shilling for beer'. At West Langton, four miles north west, Langton Hall, dating from the 15th century, contains a fine collection of furniture.
Pork pies, Stilton cheese, and the Quorn Hunt are Melton Mowbray's most famous contributions to English life. On a more spiritual level St Mary's Church, with its 100ft tower, is one of the finest parish churches in Leicestershire. Alongside is a house given by Henry VIII to Ann of Cleves 'so long as she remained in England'. However, the 'Flanders mare' bolted and there is nothing to suggest she ever lived in the house. At Thorpe End is the Melton Carnegie Museum of Local History.
Stanford Hall, on the Leicestershire bank of the Avon, was built by Sir Roger Cave between 1697 and 1700. It is possibly the most handsome house of its period in the county. The contents include a fine collection of paintings, furniture and old family costumes. In a nearby meadow, a pillar marks the spot where P S Pilcher crashed and was killed while trying to fly in 1899. He had reached an altitude of 50ft. A replica of his machine is in the vehicle museum attached to the house.
Wymondham has an early English Church displaying some fine carving in the nave and containing a 14th-century arish room. It is said that Stiltonciheeses were originally made here and Stilton to be sold to then taken to he Great North Road.
Take a look around Belvoir Castle


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Being Uncle Charlie
A Life Undercover With Killers, Kingpins, Bikers and DruglordsBook - 2013
Being Uncle Charlie is the intense, intimate and graphic story of one Canadian undercover cop who spent two decades infiltrating organized crime. From Russian and Italian mafias to notorious biker gangs, Bob Deasy gained access to and the acceptance of criminals who most cops in any country would never encounter or arrest, let alone befriend.
Bob Deasy had an illustrious twenty-three year career with the Ontario Provincial Police. Using little more than his quick wits, natural confidence and a deft mental equilibrium that allowed him to stay three chess moves ahead of his quarry, Deasy was the secret weapon behind some of the signature crime busts in Canadian history. Infiltrating the Outlaws Motorcycle Club and the Russian and Italian mobs, he also single-handedly set up international import-export businesses, faked contract hit jobs and executed one of the largest drug buys in OPP history. He also perfected the now controversial "Mr. Big" technique of posing as a crime kingpin to solicit unwitting confessions from suspects in long-dormant cold murder cases--a tactic he defends as he practised it, and with which he enjoyed a 100% success rate.
Being Uncle Charlie is a nail-biting ride--sometimes comic, always entertaining--that reads like a one-man history of modern crime, told through the ground-level, insider's perspective of a cop who was able to blend in with the unsavoury, the desperate and the diabolical.
From the critics
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I enjoyed the fact that it was about local crime, but was hoping the stories would be a little more exciting and more detailed.
Great book about undercover life. Deasy gives candid observations and reflections with his experience in a world I can't even imagine. Enjoyed this book.
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When I was a child the clank of the snow plow going by early in the morning meant no school...chocolate chip cookies, soggy mittens, and a long game of Monolopoly!
Early this morning I heard the familiar clank, jumping out of bed, I opened my curtains to find a winter wonderland. What a welcome sight after all of that rain!
The lights on the plow were blinking...clanging along, and I could only imagine all the children on the street were jumping out of bed wishing for the snow day as well.
It is just a delay, but enough time for a second cup of coffee, answer emails, and enjoy the feeling of going "late" to school.
Don't we just love snow plows?
Lou Ann Homan is a writer, teacher, and storyteller who
lives in Angola, Indiana. She is available for writing seminars, storytelling, and speaking engagements. She can be contacted at firstname.lastname@example.com. You can read more at www.louannhoman.com


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Parent Power is compellingly practical reading. It underscores the imperative that there is nothing more important to a child's future than a loving, caring and knowledgeable parent-and that speaks to the very future of our country.
David Lawrence, Jr., Former Publisher, Miami Herald; President, The Early Childhood Initiative Foundation.
At a time when there is so much noise and blather about children and families in the public debate, in Parent Power Jack Westman offers a clear signal based on decades of experience and a clear reading of the research. He calls the bluff of those who mouth empty platitudes like "our children are the future" and lays out what it really means to take that proposition seriously, as a matter of national security, prosperity, and moral principle.
James Garbarino, Ph.D., Founding Director, Center for the Human Rights of Children; Professor of Psychology, Loyola University Chicago.
Dr. Westman's well-researched, bold proposal focusing on how to give our children the best start in life by having every birth mother and father sign a Parenthood Pledge deserves to be widely-debated. Our traditional view that parenthood is a right, with little thought about how well we raise our children, belongs to a bygone era. Our culture's obsession with money and economic growth and success, as measured by the GDP, takes little heed of the heavy social costs we bear when children are abandoned, mistreated, miseducated or left to become wards of the state.
Dr. Hazel Henderson, President, Ethical Markets Media; author Building A Win-Win World and Ethical Markets: Growing the Green Economy.
Millions of American children are neglected and abused. We all pay a price, as this provocative book shows. As with any effort to strengthen families, Parent Power's proposals will be controversial, but deserve to be understood and debated.
Ann Crittenden, author of The Price of Motherhood.
It is time to listen to Dr. Westman before another generation of children fills our prisons and rehab centers or die. Shouldn't the most vulnerable of our society, our children, have the right to the strongest opportunity to be protected in our land of "Liberty and Justice for All".
Judge Charles D. Gill, Connecticut Superior Court.


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Exploring Venice
Venice is a beautiful city that is full of colour, romance and gigantic stacks of italian desserts. There are so many special and unique attractions to be discovered, especially when you wander and let yourself get lost within the narrow streets and canals.
My travel tips for Venice
Get lost.
After you have seen all of the major sights that you want to see, tuck your map away into you backpack and wander through the canals. This is one of the best ways to see the city of Venice and it will also help you to escape the crowds for a period of time. There is so much exploring that can be done, and endless little gems that can discovered while aimlessly wandering the narrow streets. For example, the photo above of the chocolate that is meant to look like rusted tools, as well as the oldest coffee shop in Venice were both stumbled upon by accident!
See the city from the water.
I would recommend splurging on a gondola ride. It is well worth the cost since you are able to experience the city from a whole other perspective, which I always think is important. This also makes for a romantic and fun time if you are going with your significant other…it is the city of love after all!
Wake up early.
Get up before the crowds and tourists and I promise you it will make your trip so much more enjoyable. If you are visiting during the summer months, so are thousands of others and with Venice's small size it can sometimes be overwhelming.
Enjoy the food.
There are so many incredible places to eat that are overflowing with gelato, chocolates, cookies, pastries and other indulgences. Try a little bit of everything, you cannot go wrong! There are also wonderful options of fresh cut up fruit that can be purchased along the streets, which makes great on-the-go exploring snacks.
Try on the masks.
There is so much fun to be had in trying on the many different types of masks. There are masks of all sorts, and surely a perfect one to suit every personality!


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ACT Students asked faculty and lecturers questions about their life and research– what is artistic research? why ACT?
Read on to get inside-act.
Egyptian-Lebanese artist Lara Baladi is internationally recognized for her multidisciplinary work, which weaves personal and socio-political narratives into mutable and non-linear expressions of cultural memory. In her investigations into myth, archives and personal histories, Baladi makes use of a wide range of mediums including architecture, installations, photography, collage, tapestry, perfume and sculpture.
This semester, Baladi will teach 4.341/2 | Introduction to Photography and Related Media and 4.344/5 | Advanced Photography and Related Media
When and how did you decide to become an artist?
I believe that becoming an artist is not a decision one makes. It is a state of mind. I was always creative as a child. I played the piano, I built worlds and told my stories with the images and toys I collected. It was later in my life that I became aware that I could channel my creativity more consciously and that there was such a thing as an art world.
What is your background or training?
I am self-taught. I was studying business administration in London. During the first summer vacation, I fell in love with a camera, which I found while visiting New York city.
The next semester, I signed up for a photography class as one of my electives, and the next semester for another one… When I graduated, I knew the basics of photography but nothing about art. The only certitude I had was that I wanted to "create" images.
What does ACT offer or allow that you wish you had when you were a student?
As part of the unique environment, which is MIT, ACT offers not only extra ordinary facilities for students to explore a vast array of artistic techniques but also and most of all, the possibility to be creative and in a multi-disciplinary context.
What could you not live or work without?
Making art!
What do you enjoy most about teaching?
Sharing what I love and hopefully helping students find their own creative voice.
In your own words, what is the Art, Culture, and Technology program? Similarly, what does "Art, Culture and Technology" mean to you?
It sums up what life is about when it is at its best. One's world and culture combined with technologies available to us in a creative way.
What role can or should ACT play within the greater MIT community.
ACT could be a catalyst for everything MIT has to offer. It could be the place where new ideas, new technologies and discoveries made across MIT are applied to art and challenged by students in the most creative and unexpected ways.
Whose work, artists, writers, scientists, or otherwise has influenced or inspired you?
The pyramids of Gizeh, Ramses Wissa Wassef's tapestries, the nympheas of Claude Monet, Ralph Eugene Meatyard, Diane Arbus, the medieval tapestry, La Dame a la Licorne, Werner, James Turell to list a few…
How does your own work relate to or differ from the traditions of art production at MIT beginning with György Kepes and the Center for Advanced Visual Studies in the 60's?
Through the use of multicultural popular and mythological iconography, my work emphasizes personal and socio-political narratives, almost the opposite of Gyorgy Kepes' work in terms of visual language.
In your words, what does "artistic research" mean? How is it similar or different from "scientific research?"
Artistic research is the journey to making an artwork. There are no rules for how to go about it, unlike scientific research. My artistic research often consists of building an archive, finding iconic ideas/elements to later create links between them.
Do you have any hobbies?
Mainly outdoor sports and dance.
Have you had any project disasters or crises? What Happened?
Yes of course. Working is always full of surprises. I have had very difficult situations while making my works. One example from my very early works was a car accident in the desert while shooting a photo collage titled Oum El Dounia.
What book(s) are you reading right now?
I am reading books related to my artist residency at MIT and the project I am undertaking which deals with the Internet and big data. I am also revisiting the history of photography and images in preparation to lecture at ACT.
What book/film/album should every MIT student read/see/hear, and why?
I don't believe any one 'should' do anything but since MIT is all about projecting ourselves in the future of technology, these films and books can be a great source of inspiration: The Trip to the Moon, by Melies, Metropolis, by Fritz Lang, 1984, by George Orwell and more contemporary, the TV series, Black Mirror.
This semester, Lara Baladi will teach 4.341/2 | Introduction to Photography and Related Media and 4.344/5 | Advanced Photography and Related Media
Check out Lara Baladi's recent exhibition on view at the Sackler:


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We had a much needed getaway weekend on Friday and Saturday. Zack has been planning to do this for my birthday but the weekends {and Snow} never seemed to work our plans out. We had a blast and it was so nice to getaway for 24 hours-just the two of us. We always stay at the Colcord Hotel in Bricktown. It was Oklahoma's first skyscraper {which isn't very tall compared to the buildings now} and has such a neat and rich history to it. We stayed there our wedding night and decided we would continue every time we were able to getaway for a bit.
Friday night we had dinner at our favorite Mexican restaurant, Abuelo's. And as always, we ate way to much.
Saturday we slept in and checked out to do some shopping. It's amazing how good you feel when you get to "sleep in" until 9. I took him to Scratch kitchen in Norman which is a new favorite place for us. They make everything they cook, including sauces, from Scratch and you can totally tell. Some of the best food!
http://farmgirlblogs.com/body-image-essay/The rest of the day we spent shopping and not having a care in the world. We haven't done this in forever. We weren't rushed, and found some really neat places that we've never been to.
We bought Scout's first dress and OKC Thunder shirt and also found Paisley's dress and shoes for her Daddy/Daughter dance at church this coming weekend.
We had so much fun laughing and talking and spending some quality time on our marriage. I am so thankful for this man and had the best time.
I love you, Zack. :)


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Somebody is Going to Have a Frosty Christmas
NOTE: I received an ARC of this book.
Enjoyed your review & can't wait to read this second book.ReplyDelete
This sounds like a great book!ReplyDelete
I really enjoy all of Karen's books that I've read.Delete
I've read another series by this author and really enjoyed them. I like that this one is set on a farm and it is funny about the settings. I've noticed that I keep ending up on farms in my cozy mysteries too though I hadn't noticed that!ReplyDelete
I've enjoyed your Gray Whale Inn books as well, which are set at a bed and breakfast.
So if farms are the current trend, I wonder what will be next.
Thanks for the great review! Looking forward to this one.ReplyDelete
I love books that put you in the spirit of Christmas, but murderous spirit sounds fun! :-)ReplyDelete
There are a lot of Christmas mysteries out there, and more all the time, or so it seems.Delete


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Taking the fall…
December 5, 2009
This is a blog about budo, not yoga..
I stand five feet and seven inches above the surface of the earth. I'm not that tall by most standards. Average height. The ground is not so far away. Or so I thought.
My mind is consumed lately with the idea of falling. I am learning to fall, slowly, with my sensei. I am learning that the most important thing is to put my chin on my chest. I am learning that you can either control how or when you fall – but never both. I am learning that falling is not so scary. I am also learning that falling can take your breath away. I am learning that falling is an art as much as the intricate kata that I am studying.
When I began my budo training nearly eight months ago, I knew that I would learn to fall eventually. I studied with my teacher, sort of rejoicing that we spent almost five solid months learning other things besides Newton's 3rd Law. But I knew it was coming. My friend joked with me that everything would change and my perception of the art would be altered when I started facing my body going down to the ground. He was right.
Falling is a different world.
I tell my yoga students that one of our most primal human fears is falling over backwards. We spend a great deal of our time controlling our falling. Walking, afterall, is just graceful, controlled falling. We see kids fall, see babies fall, see leaves fall. And we all avoid it.
Several weeks ago sensei pulled out the mat and said now we fall. I was anxious, but trusted that, like everything else he had taught me, this too would be paced and I would learn it gradually. I have learned a few falls. First, a backward fall. Then the forward rolling, and most recently a side fall. I'm still finding my way with all of these different falls.
I watch my teacher toss himself over on the mat so beautifully. It's wonderfully graceful and he always comes out so nicely. I remember the first time I saw him take the otoshi (forward roll). I thought surely he did not expect me to do that. Oh, right, he does. Of course. We started with the backfall, which is still our mainstay. For some reason in practice, the backfall does not spook me. But in application when I am actually being thrown, I often grab desperately for my teacher's keikogi, his wrist, his back, anything I can find. I curl up like a cat. Oh god, the ground, where is it?? My mind screams, and down I go. I am getting better at these and have even enjoyed them a bit recently. But you really cannot explain or understand this until it's your body going down, carrying that veritable wrecking ball of your teacher's body drop. You really have no idea what your body and mind will do. Hopefully, with good training, you'll tuck your chin and go down, keeping the arms extended in front. You might even get a good slap. But all the while, even with proper execution, the monkey brain can be screaming NO NO NO!!! Or at least, that's what they tell me.
I've experienced good and bad falls. Thankfully, none have been injurious. I've come away with a sore neck and some sore shoulders. But overall, the falls aren't that bad. Recently my teacher threw me on a fall I've been bailing out of so fast I had no time to even try to bail out. There's learning all around.
I'm learning to face some of my fears. Falling is giving me the courage to throw my uke with authority, execute the technique with a little confidence, and even face the unknown.
I know in my head how far I am from the ground (or mat). I know how to fall, from a technical standpoint. I know how to move and what to do. The next step is to get my mind to stop working, stop analyzing, and just take the fall.


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For last night's interactive Future of Human Touch experiment at Redline Gallery, the crowd that gathered was asked to leave all egos, comfort zones and fears behind.
Milling around the courtyard of the gallery under the slow glow of hanging LED lights just after 7:30 p.m., it was hard to tell who was a facilitator and who was a participant; but blurring the line was part of the point. For the next three hours, strangers danced, hugged and shouted together, as guides led the group through an evening of shared knowledge, passionate speech, movement and connection.
First, we were given a slip of paper with a vague explanation of the forthcoming events, and the option to not be touched by those involved in the experiment facilitation. Four women stepped out into the courtyard and spoke to each Cardinal direction, acknowledging the sun and moon's involvement in the piece and the night effectively began.
The audience was then led inside, to a detailed mapping of the planets in the zodiac -- all laid out on the floor represented by rocks, bamboo sticks and cut-out versions of each astrological sign. From that point forward, the night became a beautiful blur. Astrologer Ramon Gabrieloff-Parish positioned audience members in each sign of the zodiac, and spoke about the power of those signs. The participants then read from slips of paper around the signs, leading the surrounding crowd in a spoken back and forth.
Though there was no leader of the event -- facilitator Molina Speaks was present too, but mostly behind the scenes -- Gabrieloff-Parish definitely came through with the most attention-grabbing power of speech.
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Throughout the event, we were asked to break up and enjoy the art around the space, allowing the crowd to get to know each other. But each small break was quickly reigned in as to not lose participant's attention. Sometimes, the crowd was led through a handful of calming yoga poses. Other times, we were energized to dance by a live band's music. But some of the most powerful moments were the silent ones, as we sat transfixed by the strength and heaviness of spoken word artists Lucifury, Ken Arkind, Stephanie Tanny and more.
Molina Speaks too utilized the live band to perform some of his own music, and then invited other MCs in the room --Kalyn Heffernan of Wheelchair Sports Camp, Lady Speech and Bianca Mikahn of the Lady Wu-Tang among them -- to join in. The crowd seemed receptive to whatever was put out on the massive space's concrete floor, as we traveled through a mix of emotions for the better part of three hours.
As the night began to wind down, Sarah Shavel and Eutimia Cruz Montoya quieted the crowd with a solemn movement and vocal performance. Gabrieloff-Parish once again presented more information about the zodiac in relation to the positions of the planets through history, as well as the position and size of the moon. We were once again led out into the chilly night for a closing ceremony thanking the elements of the North, South, East and West, and the Future of Human Touch was over.
The greatest part about the experience was understanding that for it to work, strangers had to trust each other. Throughout the night, people were holding each other, crying, laughing and dancing, all under the pretense that the space was a safe place for whatever was going to happen. And that's exactly what it was.


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SAO PAULO, Dec 17 (Reuters) - Brazil's Embraer said on Monday it had finalised the terms of a proposed deal to sell 80 percent of its commercial aviation business to Boeing .
As announced, the terms of the deal remain unchanged from when the joint-venture was first announced in July. The deal still needs approval from the Brazilian government. (Reporting by Marcelo Rochabrun; Editing by Kirsten Donovan)


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Arkansas Baptist College Chapel (Empowerment Hour) provides regularly scheduled empowerment hour assemblies during the academic school year (except during summer terms). Chapel is scheduled weekly, and is an institutional requirement for all students. These assemblies provide a variety of experiences that are educational, developmental, and spiritual in form and content. All students are required to attend, unless granted an excuse. Instructor and staff are expected to attend these assemblies not only to derive the benefits from them, but also to exhibit support and endorsement for the college. Disregard of the attendance policy will lead to disciplinary action.
The course meets fifty minutes, once weekly 12 weeks per semester. Satisfactory completion of Chapel requires a minimum of 75% or better attendance, which is at least 9 Chapel services. Attendance of less than 9 Chapel services will result in a No Credit (NC) grade. Student progress will be reported as 'P' (Pass) for 75% or better attendance, or 'NC' (No Credit) for less than 75% attendance.Fall 2017 Chapel Schedule
August 24, 2017
August 31, 2017
September 7, 2017
September 14, 2017
September 21, 2017
September 28, 2017
October 5, 2017
October 12, 2017
October 19, 2017
October 26, 2017
November 2, 2017
November 9,2017
Fall 2017
Sunday Chapel (Holy Communion) Schedule
August 27, 2017
September 24, 2017
October 29, 2017
December 3, 2017
The College specifies that chapel services be held with attendance mandatory for all students. Each semester, students are registered for Chapel and are required to attend the entire service. Students living in a residence hall, including privileged housing, must attend chapel. Services include a devotional period and announcements of general interest. The planned programs are designed to stimulate intellectual, religious, and social development.
Chapel is under the direction of the president of the College. The Office of Enrollment Management/Student Services/Director of Religious Life plans and recommends programs for his approval. Many programs are presented by students and student organizations.
In addition to the spiritual emphasis and the varied programs, chapel provides a coming together experience for the entire student body, faculty, and staff.
The College is committed to a continuing analysis and evaluation of chapel to make it a most worthwhile experience. Appropriate attitudes and behaviors for the foundation of the Chapel experience are expected.
There are two scheduled chapel services. Students must choose between 11 a.m. or 6p.m. chapel.
Notification for Excessive Chapel Absences
As attendance is recorded in the Office of Enrollment Management/Student Services each Chapel, the attendance record is recorded by the Director of Religious Life. In this way, the student's record is available for review. The attendance record will not only record attendance and tardies, but also present warning signals on the student's Arkansas Baptist College email account at certain intervals to help the student in making decisions about attendance throughout the semester.
Courtesy Warning (within two of the allotted remaining chapel absences): This reminder informs the student that he/she has only two remaining chapel absences allowed for the semester.
If the student feels there is a mistake, he/she should clear this with the Office of Enrollment Management/Student Services as soon as possible.
Warning (after the maximum allotted chapel absences): This is a reminder that the student has missed the maximum number of chapel absences for the semester. If the student feels there is a mistake, he/she should clear this with the Office of Enrollment Management/Student Services. Any further absences will result in chapel probation.
Warning (after exceeding the maximum absences): This serves as a notification that the student has exceeded the maximum number of chapel absences for the semester. If the student feels there is a mistake, he/she should clear this with the Office of Enrollment Management/Student Services.
Warning (after excessive chapel absences): This serves as notification that the student will be on chapel probation.
Chapel Disciplinary Action
The accumulation of more than the 3 allotted unexcused absences will result in Chapel Disciplinary Action. This may include one or more of the following:
Chapel Appeals Process
When a student has been disciplined for excessive chapel absences by the Director of Religious Life, he/she has the right to appeal this decision. The request for appeal shall be filed through the Office of Enrollment Management/Services, who in turn will arrange a meeting a Chapel Attendance Committee. This committee will be composed of faculty, staff, and student who will hear the case and make a decision based on the information presented to them.
Special Notes


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Welcome to Perth Heritage Builders
Today we look back at our 50 years of combined international experience in heritage restoration with pride and we are passionate and excited about been given opportunities to protect and restore heritage buildings.
We offer conservation and restoration expertise and total project management, specialising in the traditional repair of listed buildings, period properties, churches, and other heritage sites throughout Western Australia.
Our work to date has seen us undertake restoration projects for commercial clients such as city councils and corporate owners of heritage buildings as well as residential heritage projects.