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Light Responsive Structure Patents (Class 257/184)
Patent number: 10727267Abstract: A method of assembling a photodetector assembly includes depositing bumps on a read out integrated circuit (ROIC) without depositing bumps on a photodiode array (PDA). The method includes assembling the PDA and ROIC together wherein each bump electrically interconnects the ROIC with a respective contact of the PDA. A photodetector assembly includes a PDA. A ROIC is assembled to the PDA, wherein the ROIC is electrically interconnected with the PDA through a plurality of electrically conductive bumps. Each bump is confined within a respective pocket between the ROIC and a respective contact of the PDA. The disclosed methods can enable focal plane array manufacturers to achieve low-cost production of ultra-fine pitch, large format imaging arrays.Type: GrantFiled: September 12, 2018Date of Patent: July 28, 2020Assignee: Sensors Unlimited, Inc.Inventors: Wei Zhang, Douglas Stewart Malchow, Michael J. Evans, Wei Huang, Paul L. Bereznycky, Namwoong Paik
Patent number: 10686532Abstract: An optical receiver component, wherein the receiver component comprises a first type of partial-voltage source with a first absorption edge and a second type of partial-voltage source with a second absorption edge, and the first absorption edge lies at a higher energy than the second absorption edge. Each partial-voltage source produces a partial voltage, provided a photon flux at a specific wavelength strikes the partial-voltage source, and the two partial-voltage sources are connected in series. A first number of series-connected sub-partial-voltage sources of the first type and a second number of series-connected sub-partial-voltage sources of the second type are provided. The first number and/or the second number are greater than one, and the respective deviation of the source voltages of the sub-partial-voltage sources among themselves is less than 20% in both types. Each sub-partial-voltage source comprises a semiconductor diode with a p-n junction.Type: GrantFiled: April 20, 2018Date of Patent: June 16, 2020Assignee: AZUR SPACE Solar Power GmbHInventors: Wolfgang Guter, Daniel Fuhrmann, Christoph Peper
Patent number: 10686101Abstract: Provided is a semiconductor light emitting device which includes: a light emitting structure including a plurality of semiconductor layers and configured to generate and emit light to an outside of the light emitting structure; a transparent electrode layer disposed on the light emitting structure; a transparent protective layer disposed on the transparent electrode layer; a distributed Bragg reflector (DBR) layer disposed on the transparent protective layer and covering at least a part of the transparent electrode layer; and at least one electrode pad connected to the transparent electrode layer through a hole or via.Type: GrantFiled: July 6, 2018Date of Patent: June 16, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Ju Heon Yoon, Ha Yeong Son, Young Sub Shin
Patent number: 10680086Abstract: A heterojunction bipolar transistor is integrated on radio frequency (RF) dies of different sizes. The heterojunction bipolar transistor includes an emitter on a first-side of a semiconductor-on-insulator (SOI) layer of an SOI substrate. The emitter is accessed from the first-side while a collector is accessed from a second-side of the SOI substrate. One or more portions of a base of the heterojunction bipolar transistor is between the emitter and one or more portions of the collector. The heterojunction bipolar transistor also includes a compound semiconductor layer between the collector and the emitter. The compound semiconductor layer carries a charge between the emitter and the collector.Type: GrantFiled: June 18, 2018Date of Patent: June 9, 2020Assignee: QUALCOMM IncorporatedInventors: Sinan Goktepeli, George Pete Imthurn, Stephen Alan Fanelli
Patent number: 10680124Abstract: Disclosed are systems and methods for improving applications involving the generation and detection of electromagnetic radiation at terahertz (THz) frequencies. Embodiments of the systems and methods include the fabrication and use of plasmonic devices that enhance light-matter interaction at the nanometer scale by extreme focusing with nanostructured metals. This plasmonic enhancement is used to produce high efficiency THz photoconductive switches that combine the benefits of low-temperature grown GaAs while using mature 1.55 ?m femtosecond lasers operating with photon energy below the GaAs band-gap.Type: GrantFiled: November 14, 2016Date of Patent: June 9, 2020Assignee: UVic Industry Partnerships Inc.Inventors: Thomas E. Darcie, Reuven Gordon, Afshin Jooshesh
Patent number: 10680131Abstract: An example device includes a doped absorption region to receive optical energy and generate free electrons from the received optical energy. The example device also includes a doped charge region to increase an electric field. The example device also includes an intrinsic multiplication region to generate additional free electrons from impact ionization of the generated free electrons. The example device includes a doped contact region to conduct the free electrons and the additional free electrons.Type: GrantFiled: July 27, 2015Date of Patent: June 9, 2020Assignee: Hewlett Packard Enterprise Development LPInventors: Zhihong Huang, Raymond G Beausoleil
Patent number: 10644480Abstract: An optical module includes a light-forming part configured to form light; and a protective member that includes an output window configured to transmit light from the light-forming part and that is disposed so as to surround the light-forming part. The light-forming part includes a base member; a plurality of semiconductor light-emitting devices mounted on the base member and configured to emit light differing from each other in wavelength; and a filter mounted on the base member and configured to directly receive and coaxially multiplex diverging light from the plurality of semiconductor light-emitting devices.Type: GrantFiled: April 19, 2017Date of Patent: May 5, 2020Assignee: Sumitomo Electric Industries, Ltd.Inventor: Hiromi Nakanishi
Patent number: 10608070Abstract: An organic EL display device includes: a lower electrode; an upper electrode; a first organic layer which is disposed between the lower electrode and the upper electrode and is formed of a plurality of layers including a light emitting layer formed of an organic material that emits light; a metal wire that extends between the pixels within the display region; and a second organic layer which is formed of a plurality of layers the same as that of the first organic layer and which comes into contact with a part of the metal wire and does not come into contact with the first organic layer. The upper electrode comes into contact with the metal wire in the periphery of the second organic layer. Accordingly, it is possible to uniformize the potential of the upper electrode without reducing the light emission area.Type: GrantFiled: September 19, 2018Date of Patent: March 31, 2020Assignee: Japan Display Inc.Inventors: Yuko Matsumoto, Toshihiro Sato
Patent number: 10580923Abstract: A disclosed optical semiconductor device includes a first semiconductor layer having a first refractive index and a first optical absorption coefficient; and a second semiconductor layer formed on the first semiconductor layer, the second semiconductor layer having a second refractive index and a second optical absorption coefficient. The second refractive index is larger than the first refractive index, and the second optical absorption coefficient is larger than the first optical absorption coefficient. The first semiconductor layer includes a first region of p-type, a second region of n-type, a third region of p-type or n-type between the first region and the second region, a fourth region of i-type between the first region and the third region, and a fifth region of i-type between the second region and the third region. The second semiconductor layer is formed on the first region, the fourth region, and the third region.Type: GrantFiled: May 30, 2019Date of Patent: March 3, 2020Assignees: FUJITSU LIMITED, PHOTONICS ELECTRONICS TECHNOLOGY RESEARCH ASSOCIATIONInventor: Takasi Simoyama
Display panel with luminance efficiency improvement, display device, and method of fabricating the display panelPatent number: 10566576Abstract: This disclosure provides a display panel including a first substrate with pixel areas and emission areas defined by a plurality of gate lines and a plurality of data lines; and a second substrate on which partitions are formed to correspond with the emission areas. The present disclosure provides a method for improving luminance efficiency of a display device having a mirror or transmittance function.Type: GrantFiled: October 21, 2016Date of Patent: February 18, 2020Assignee: LG DISPLAY CO., LTD.Inventors: Eui-Tae Kim, Ki-Seob Shin
Patent number: 10546663Abstract: An electrical conductor includes: a first conductive layer including a plurality of ruthenium oxide nanosheets, wherein at least one ruthenium oxide nanosheet of the plurality of ruthenium oxide nanosheets includes a halogen, a chalcogen, a Group 15 element, or a combination thereof on a surface of the ruthenium oxide nanosheet.Type: GrantFiled: October 18, 2016Date of Patent: January 28, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sungwoo Hwang, Se Yun Kim, Jong Wook Roh, Woojin Lee, Jongmin Lee, Doh Won Jung, Chan Kwak
Patent number: 10529878Abstract: A Ge-on-Si photodetector constructed without doping or contacting Germanium by metal is described. Despite the simplified fabrication process, the device has responsivity of 1.24 A/W, corresponding to 99.2% quantum efficiency. Dark current is 40 nA at ?4 V reverse bias. 3-dB bandwidth is 30 GHz.Type: GrantFiled: November 30, 2018Date of Patent: January 7, 2020Assignee: Elenion Technologies, LLCInventors: Thomas Wetteland Baehr-Jones, Yi Zhang, Michael J. Hochberg, Ari Novack
Solid state imaging device and imaging apparatus including clipping sections clipping the voltage of vertical signal line to a predetermined valuePatent number: 10455175Abstract: A voltage limiting unit of a solid state imaging device limits a voltage of a signal line so as not to become a predetermined value or less. A signal processing unit to which a pixel signal is input via a signal line. A controlling unit is disposed between the voltage limiting unit and the signal processing unit on the signal line. Further, the controlling unit causes the voltage limiting unit and the signal processing unit to be non-conductive in a period in which a transfer unit of a pixel transfers the electric charge converted by a photoelectric conversion unit of the pixel to a floating diffusion region of the pixel.Type: GrantFiled: December 27, 2012Date of Patent: October 22, 2019Assignee: NIKON CORPORATIONInventor: Hideaki Matsuda
Patent number: 10418409Abstract: Disclosed herein is an apparatus comprising: an array of avalanche photodiodes (APDs), each of the APDs comprising an absorption region and an amplification region; wherein the absorption region is configured to generate charge carriers from a photon absorbed by the absorption region; wherein the amplification region comprises a junction with an electric field in the junction; wherein the electric field is at a value sufficient to cause an avalanche of charge carriers entering the amplification region, but not sufficient to make the avalanche self-sustaining; wherein the junctions of the APDs are discrete.Type: GrantFiled: August 30, 2018Date of Patent: September 17, 2019Assignee: SHENZHEN XPECTVISION TECHNOLOGY CO., LTD.Inventors: Peiyan Cao, Yurun Liu
Patent number: 10411149Abstract: A lateral Ge/Si APD constructed on a silicon-on-insulator wafer includes a silicon device layer having regions that are doped to provide a lateral electric field and an avalanche region. A region having a modest doping level is in contact with a germanium body. There are no metal contacts made to the germanium body. The electrical contacts to the germanium body are made by way of the doped regions in the silicon device layer.Type: GrantFiled: October 23, 2018Date of Patent: September 10, 2019Assignee: Elenion Technologies, LLCInventors: Ari Novack, Yang Liu, Yi Zhang
Patent number: 10367284Abstract: According to an example, a socket to support a first board in a spaced relation to a second board may include a base section having openings to receive connectors that are to electrically connect the first board to the second board. The socket may also include a plurality of walls extending from the base section, in which each of the plurality of walls is angled with respect to the base section and in which the plurality of walls include air ducts to enable air to flow through the socket when the first board is positioned on the socket. The socket may further include socket alignment elements extending from the base section, in which the alignment elements are to be inserted into mating holes in the second board.Type: GrantFiled: July 27, 2015Date of Patent: July 30, 2019Assignee: Hewlett Packard Enterprise Development LPInventors: Kevin B Leigh, George D Megason, John Norton
Patent number: 10361335Abstract: A method includes: forming a first mask having a first opening and a second opening; performing etching by using the first mask, to allow the etching to progress at a higher rate in the second opening than in the first opening; forming a second mask having a third opening and a fourth opening; performing etching by using the second mask, to form a mesa in a region interposed by the third opening, and an n-type contact region in the fourth opening; and forming a first electrode on the mesa and a second electrode on the n-type contact region, the first electrode being electrically connected to the third layer, the second electrode being electrically connected to the first layer, wherein a region covered with the first mask and exposed through the fourth opening of the second mask turns into the n-type contact region after the etching using the second mask.Type: GrantFiled: May 1, 2018Date of Patent: July 23, 2019Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Daisuke Kimura, Sundararajan Balasekaran
Patent number: 10361243Abstract: A method for making a CMOS image sensor may include forming a plurality of laterally adjacent infrared (IR) photodiode structures on a semiconductor substrate having a first conductivity type. Forming each IR photodiode structure may include forming a superlattice on the semiconductor substrate including a plurality of stacked groups of layers, with each group of layers including a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and a non-semiconductor monolayer(s) constrained within a crystal lattice of adjacent base semiconductor portions. The superlattice may have the first conductivity type. A semiconductor layer may be formed on the superlattice, along with a retrograde well extending downward into the semiconductor layer from a surface thereof and having a second conductivity type, a first well around a periphery of the retrograde well having the first conductivity type, and a second well above the retrograde well having the first conductivity type.Type: GrantFiled: December 15, 2017Date of Patent: July 23, 2019Assignee: ATOMERA INCORPORATEDInventors: Robert J. Mears, Marek Hytha
Patent number: 10340407Abstract: An avalanche photodetector (APD) includes a photo converter for signals to be demodulated into free charge carriers; and at least one avalanche amplifier for the free charge carriers. The photo converter and the avalanche amplifier are located next to each other on the same substrate and are in direct contact with each other. The avalanche amplifier includes a contact layer and a multiplier layer. The multiplier layer is made of a semiconductor of the same conductivity type as the photo converter and faces the substrate abutting the photo converter on one side. A first electrode is on the contact layer of the avalanche amplifier, while the second electrode is on a bottom of the substrate.Type: GrantFiled: October 18, 2016Date of Patent: July 2, 2019Assignee: LLC "Dephan"Inventors: Vitaly Emmanuilovich Shubin, Dmitry Alexeevich Shushakov, Nikolay Afanasievich Kolobov
Patent number: 10332931Abstract: The semiconductor device comprises a semiconductor wafer with an integrated circuit, formed by a plurality of dies, a further semiconductor wafer, which differs from the semiconductor wafer in diameter and semiconductor material, the semiconductor wafer and the further semiconductor wafer being bonded to one another by means of a bonding layer, and an electrically conductive contact layer arranged on the further semiconductor wafer opposite to the bonding layer.Type: GrantFiled: March 9, 2017Date of Patent: June 25, 2019Assignee: ams AGInventors: Cathal Cassidy, Joerg Siegert, Franz Schrank
Patent number: 10326095Abstract: An organic light emitting display panel includes a substrate, a driving transistor provided on the substrate, a first insulation layer covering the driving transistor, a second insulation layer covering the first insulation layer, a first electrode provided on the second insulation layer and connected to a first conductor part of the driving transistor, a second electrode provided on the second insulation layer and connected to a second conductor part of the driving transistor, a passivation layer covering the first electrode, the second electrode, and the second insulation layer, and an organic light emitting diode provided on the passivation layer, an anode configuring the organic light emitting diode is connected to the first conductor part, and the anode protrudes convexly from an upper surface of the passivation layer.Type: GrantFiled: November 28, 2017Date of Patent: June 18, 2019Assignee: LG Display Co., Ltd.Inventors: Min-Gu Kang, DaeHwan Kim
Patent number: 10312397Abstract: An Si/Ge SACM avalanche photodiodes (APD) having low breakdown voltage characteristics includes an absorption region and a multiplication region having various layers of particular thicknesses and doping concentrations. An optical waveguide can guide infrared and/or optical signals or energy into the absorption region. The resulting photo-generated carriers are swept into the i-Si layer and/or multiplication region for avalanche multiplication. The APD has a breakdown bias voltage of well less than 12 V and an operating bandwidth of greater than 10 GHz, and is therefore suitable for use in consumer electronic devices, high speed communication networks, and the like.Type: GrantFiled: February 24, 2017Date of Patent: June 4, 2019Assignee: Intel CorporationInventors: Yimin Kang, Han-Din Liu
Patent number: 10276816Abstract: A semiconductor device that includes a layer of highly crystalline semiconductor material positioned on an insulating substrate. The semiconductor device also includes a source structure and a drain structure positioned on the layer of highly crystalline semiconductor material. The semiconductor device also includes a photoelectric element positioned on the layer of highly crystalline semiconductor material. The photoelectric element forms an electrical junction with the layer of highly crystalline semiconductor material. The photoelectric element is positioned between the source structure and the drain structure. The photoelectric element is also electrically floating.Type: GrantFiled: December 11, 2014Date of Patent: April 30, 2019Assignee: International Business Machines CorporationInventors: Joel P. de Souza, Bahman Hekmatshoartabari, Daniel M. Kuchta, Devendra K. Sadana
Patent number: 10250282Abstract: A structure for radiofrequency applications includes: a semiconducting supporting substrate, and a trapping layer arranged on the supporting substrate. The trapping layer includes a higher defect density than a predetermined defect density. The predetermined defect density is the defect density beyond which the electric resistivity of the trapping layer is no lower than 10,000 ohm·cm over a temperature range extending from ?20° C. to 120° C.Type: GrantFiled: September 17, 2015Date of Patent: April 2, 2019Assignee: SoitecInventors: Oleg Kononchuk, Didier Landru, Christophe Figuet
Patent number: 10186626Abstract: A two-terminal photon-effect transistor (PET) is described that simplifies the photo sensing pixel by combing photodiode and field effect transistor dual functions into one simple but effective unit. Photons excite electrons from the valance band of semiconducting material as the electrode-free gate to modulate resistivity between source and drain, which directly results in current amplification of photo signal without traditional photo-electrical conversion and electrical amplification dual processes. PET possesses significance in both structural simplification and functional enhancement. As an implementing example of PET, a nanowire camera (NC) with large sensing area and extremely high resolution is fabricated by integrating millions of vertically aligned nanowire arrays in-between of orthogonal top and bottom nano-stripe electrodes. Each nanowire works as independent three-dimensional (3D) PET pixel, enabling the NC an ultra-high resolution and much simplified architecture.Type: GrantFiled: August 7, 2015Date of Patent: January 22, 2019Assignee: Forwarding Technology LTDInventors: Jinhui Song, Chengming Jiang
Patent number: 10170612Abstract: Embodiments include epitaxial semiconductor stacks for reduced defect densities in III-N device layers grown over non-III-N substrates, such as silicon substrates. In embodiments, a metamorphic buffer includes an AlxIn1-xN layer lattice matched to an overlying GaN device layers to reduce thermal mismatch induced defects. Such crystalline epitaxial semiconductor stacks may be device layers for HEMT or LED fabrication, for example. System on Chip (SoC) solutions integrating an RFIC with a PMIC using a transistor technology based on group III-nitrides (III-N) capable of achieving high Ft and also sufficiently high breakdown voltage (BV) to implement high voltage and/or high power circuits may be provided on the semiconductor stacks in a first area of the silicon substrate while silicon-based CMOS circuitry is provided in a second area of the substrate.Type: GrantFiled: January 31, 2017Date of Patent: January 1, 2019Assignee: Intel CorporationInventors: Sansaptak Dasgupta, Han Wui Then, Niloy Mukherjee, Marko Radosavljevic, Robert S. Chau
Patent number: 10158035Abstract: A semiconductor stack includes a first-conductivity-type layer of a first conductivity type, the first-conductivity-type layer being formed of a III-V compound semiconductor; a quantum well light-receiving layer formed of a III-V compound semiconductor; and a second-conductivity-type layer of a second conductivity type different from the first conductivity type, the second-conductivity-type layer being formed of a III-V compound semiconductor. The first-conductivity-type layer, the quantum well light-receiving layer, and the second-conductivity-type layer are stacked in this order. The quantum well light-receiving layer has a thickness of 0.5 ?m or more. The quantum well light-receiving layer has a carrier concentration of 1×1016 cm?3 or less.Type: GrantFiled: April 8, 2016Date of Patent: December 18, 2018Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Takuma Fuyuki, Suguru Arikata, Takashi Kyono, Yusuke Yoshizumi, Katsushi Akita
Patent number: 10141430Abstract: The present disclosure provides a method of forming a semiconductor device structure. The method includes determining a threshold voltage distribution profile along a height of a silicon germanium (SiGe) fin structure over a semiconductor substrate; determining a germanium (Ge) concentration profile to counteract the threshold voltage distribution profile according to a correlation between Ge concentration and threshold voltage in the SiGe fin structure; forming a SiGe epitaxial layer with the Ge concentration profile along a thickness of the SiGe epitaxial layer; etching the SiGe epitaxial layer to form the SiGe fin structure; and forming, on the SiGe fin structure, a field-effect transistor having a uniform threshold voltage along the height of the SiGe fin structure.Type: GrantFiled: July 27, 2017Date of Patent: November 27, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventor: Ka-Hing Fung
Patent number: 10132996Abstract: A method forms a vertical output coupler for a waveguide, formed of waveguide material and disposed within a layer stack on a top surface of a wafer. The method includes etching through a portion of the wafer to form a via that exposes the waveguide material, and etching the waveguide material to remove at least a first portion of the waveguide. The etching forms a tilted plane in the waveguide material. The method further includes coating the first tilted plane with one or more reflective layers, to form a tilted mirror in contact with the first tilted plane in the waveguide material. The tilted mirror forms the vertical output coupler such that light propagating through the waveguide is deflected by the tilted mirror, and exits the waveguide.Type: GrantFiled: April 20, 2016Date of Patent: November 20, 2018Assignee: Skorpios Technologies, Inc.Inventor: Damien Lambert
Patent number: 10134955Abstract: A light emitting element includes a semiconductor stacked body, an oxide film, and a reflecting film. The semiconductor stacked body has a body surface. The oxide film has an upper surface and a bottom surface opposite to the upper surface. The oxide film is provided on the semiconductor stacked body such that the bottom surface of the oxide film is opposite to the body surface of the semiconductor stacked body. The reflecting film is provided on the oxide film to be in contact with the upper surface of the oxide film and includes silver and oxide nanoparticles.Type: GrantFiled: December 26, 2016Date of Patent: November 20, 2018Assignee: NICHIA CORPORATIONInventors: Shuji Shioji, Masafumi Kuramoto
Patent number: 10128954Abstract: A transceiver comprising a chip, a semiconductor laser, and one or more photodetectors, the chip comprising optical and optoelectronic devices and electronic circuitry, where the transceiver is operable to: communicate, utilizing the semiconductor laser, an optical source signal into the chip, generate first optical signals in the chip based on the optical source signal, transmit the first optical signals from the chip via a light pipe with a sloped reflective surface coupled to the chip, and receive second optical signals from the light pipe and converting the second optical signals to electrical signals via the photodetectors. The optical signals may be communicated out of and in to a top surface of the chip. The one or more photodetectors may be integrated in the chip. The optoelectronic devices may include the one or more photodetectors integrated in the chip. The light pipe may be a planar lightwave circuit (PLC).Type: GrantFiled: February 20, 2018Date of Patent: November 13, 2018Assignee: Luxtera, Inc.Inventors: Peter DeDobbelaere, Thierry Pinguet, Mark Peterson, Mark Harrison, Alexander G. Dickinson, Lawrence C. Gunn
Patent number: 10121922Abstract: Embodiments of the present disclosure are directed to infrared detector devices incorporating a tunneling structure. In one embodiment, an infrared detector device includes a first contact layer, an absorber layer adjacent to the first contact layer, and a tunneling structure including a barrier layer adjacent to the absorber layer and a second contact layer adjacent to the barrier layer. The barrier layer has a tailored valence band offset such that a valence band offset of the barrier layer at the interface between the absorber layer and the barrier layer is substantially aligned with the valence band offset of the absorber layer, and the valence band offset of the barrier layer at the interface between the barrier layer and the second contact layer is above a conduction band offset of the second contact layer.Type: GrantFiled: November 9, 2017Date of Patent: November 6, 2018Assignee: L3 CINCINNATI ELECTRONICS CORPORATIONInventor: Yajun Wei
Patent number: 10121921Abstract: Embodiments of the present disclosure are directed to infrared detector devices incorporating a tunneling structure. In one embodiment, an infrared detector device includes a first contact layer, an absorber layer adjacent to the first contact layer, and a tunneling structure including a barrier layer adjacent to the absorber layer and a second contact layer adjacent to the barrier layer. The barrier layer has a tailored valence band offset such that a valence band offset of the barrier layer at the interface between the absorber layer and the barrier layer is substantially aligned with the valence band offset of the absorber layer, and the valence band offset of the barrier layer at the interface between the barrier layer and the second contact layer is above a conduction band offset of the second contact layer.Type: GrantFiled: December 8, 2016Date of Patent: November 6, 2018Assignee: L3 CINCINNATI ELECTRONICS CORPORATIONInventor: Yajun Wei
Patent number: 10090293Abstract: An integrated device is provided. The integrated device includes a substrate having a doped upper surface section and an insulator to define first and second substrate regions on opposite sides thereof. Vertical transistors are operably arranged on the doped upper surface section at the first substrate region. P-I-N diodes are operably arranged on the doped upper surface section at the second substrate region.Type: GrantFiled: September 7, 2017Date of Patent: October 2, 2018Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Kangguo Cheng, Juntao Li, Geng Wang, Qintao Zhang
Patent number: 10090426Abstract: A photosensor device for reducing dark current is disclosed. The photosensor device includes a photon absorbing layer and two or more photosensor diffusions in said absorbing layer. The photosensor diffusions in the absorbing layer have edges of their diffusions separated in said absorbing layer by less than two minority carrier diffusion lengths. The photosensor device also includes in one embodiment one or more diffusion control junction diffusions in the absorbing layer and in proximity to the photosensor diffusions. In another embodiment the photosensor diffusions are selectively biased to operate as photosensor diodes or as diffusion impediments.Type: GrantFiled: May 5, 2015Date of Patent: October 2, 2018Assignee: Trustees of Boston UniversityInventors: Adam R. Wichman, Enrico Bellotti, Benjamin James Pinkie
Patent number: 10090422Abstract: An encapsulated integrated photodetector waveguide structures with alignment tolerance and methods of manufacture are disclosed. The method includes forming a waveguide structure bounded by one or more shallow trench isolation (STI) structure(s). The method further includes forming a photodetector fully landed on the waveguide structure.Type: GrantFiled: May 16, 2016Date of Patent: October 2, 2018Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Solomon Assefa, Bruce W. Porth, Steven M. Shank
Patent number: 10066158Abstract: A molded nanoparticle phosphor for light emitting applications is fabricated by converting a suspension of nanoparticles in a matrix material precursor into a molded nanoparticle phosphor. The matrix material can be any material in which the nanoparticles are dispersible and which is moldable. The molded nanoparticle phosphor can be formed from the matrix material precursor/nanoparticle suspension using any molding technique, such as polymerization molding, contact molding, extrusion molding, injection molding, for example. Once molded, the molded nanoparticle phosphor can be coated with a gas barrier material, for example, a polymer, metal oxide, metal nitride or a glass. The barrier-coated molded nanoparticle phosphor can be utilized in a light-emitting device, such as an LED. For example, the phosphor can be incorporated into the packaging of a standard solid state LED and used to down-convert a portion of the emission of the solid state LED emitter.Type: GrantFiled: January 17, 2013Date of Patent: September 4, 2018Assignee: Nanoco Technologies, Ltd.Inventors: Imad Naasani, Hao Pang
Patent number: 10043920Abstract: A photodiode includes a p-type ohmic contact and a p-type substrate in contact with the p-type ohmic contact. An intrinsic layer is formed over the substrate and including a III-V material. A transparent II-VI n-type layer is formed on the intrinsic layer and functions as an emitter and an n-type ohmic contact.Type: GrantFiled: May 24, 2017Date of Patent: August 7, 2018Assignee: International Business Machines CorporationInventors: Jeehwan Kim, Ning Li, Devendra K. Sadana, Brent A. Wacaser
Methods and compositions for enhancing processability and charge transport of polymer semiconductors and devices made therefromPatent number: 10026898Abstract: Methods of making solid-state semiconducting films. The methods include forming a mixture by mixing at least two monomers in a pre-determined proportion such that at least one of the at least two monomers contains at least one non-conjugation spacer. Polymerization of the mixture is achieved by reacting the monomers with one another resulting in a solid state polymer which is then purified. The purified solid state polymer is dissolved in an organic solvent to form a homogenous solution which is then deposited onto a substrate, forming a solid-state semiconducting film by evaporating the solvent. Alternatively, the purified solid state polymer is deposited onto a substrate and heated to form a liquid melt, and cooling the liquid melt results in a solid state semiconducting thin film. Also, films comprising a semiconducting polymer composition containing a minimum of one non-conjugation spacer and devices comprising such films.Type: GrantFiled: February 17, 2016Date of Patent: July 17, 2018Assignee: PURDUE RESEARCH FOUNDATIONInventors: Jianguo Mei, Yan Zhao
Patent number: 9985231Abstract: Systems and methods are described to form compositionally graded BHJ structures utilizing solvent-fluxing techniques. In implementations, the systems and methods described herein involve a high boiling point additive, a solution of a polymer donor and an acceptor, a substrate material, a working solvent, and a flux solvent for formation of compositionally graded BHJ structures.Type: GrantFiled: February 12, 2016Date of Patent: May 29, 2018Assignee: NUtech Ventures, Inc.Inventors: Jinsong Huang, Zhengguo Xiao
Patent number: 9978890Abstract: Embodiments herein describe a photonic device that includes a germanium photodetector coupled to multiple silicon waveguides. In one embodiment, the silicon waveguides optically couple to a layer of germanium material. In one embodiment, if the germanium material forms a polygon, then a respective silicon waveguide optically couple to each of the corners of the polygon. Each of the plurality of input silicon waveguides may be arranged to transmit light in a direction under the germanium that is offset relative to both sides of the germanium forming the respective corner. In another example, the germanium material may be a circle or ellipse in which case the silicon waveguides terminate at or close to a non-straight, curved surface of the germanium material. As described below, optically coupling the silicon waveguides at a non-straight surface can reduce the distance charge carriers have to travel in the optical detector which can improve bandwidth.Type: GrantFiled: February 23, 2017Date of Patent: May 22, 2018Assignee: Cisco Technology, Inc.Inventors: Igal I. Bayn, Vipulkumar Patel, Sean P. Anderson, Prakash Gothoskar
Patent number: 9960297Abstract: Embodiments of the invention describe apparatuses, optical systems, and methods related to utilizing optical cladding layers. According to one embodiment, a hybrid optical device includes a silicon semiconductor layer and a III-V semiconductor layer having an overlapping region, wherein a majority of a field of an optical mode in the overlapping region is to be contained in the III-V semiconductor layer. A cladding region between the silicon semiconductor layer and the III-V semiconductor layer has a spatial property to substantially confine the optical mode to the III-V semiconductor layer and enable heat dissipation through the silicon semiconductor layer.Type: GrantFiled: November 28, 2016Date of Patent: May 1, 2018Assignee: Juniper Networks, Inc.Inventors: Erik Johan Norberg, Anand Ramaswamy, Brian Koch
Patent number: 9952479Abstract: The present invention relates to a display substrate and a method for fabricating the same, a display panel and a display device. The display substrate comprises a plurality of pixels, each of which has a display region, a non-display region being between the plurality of pixels, and the display substrate further comprises a protection metal layer covering the non-display region. In the display substrate, the protection metal layer covers the non-display region of the display substrate so as to shield the structures of the thin-film transistors, signal lines and the like on the display substrate, and thus the stability of structure of the display panel as well as the high resolution of the display panel and excellent display effect thereof can be ensured, and, in the meantime, the procedure of fabrication process is simplified, the manufacture efficiency is improved, and the cost for manufacturing is reduced.Type: GrantFiled: January 6, 2016Date of Patent: April 24, 2018Assignees: BOE TECHNOLOGY GROUP CO., LTD., HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY, CO., LTD.Inventors: Binbin Cao, Peng Jiang, Peng Chen, Jongwon Moon, Yinhu Huang, Chengshao Yang, Haipeng Yang
Patent number: 9927572Abstract: Examples include hybrid silicon photonic device structures. Some examples include a method of integrating a photodetector with a photonic device on a silicon wafer to make a hybrid silicon photonic device structure. A dielectric layer is established on the silicon wafer. A pit is formed in a portion of the dielectric layer and the silicon wafer, wherein a bottom of the pit is silicon. A germanium layer is grown in the pit such that a top of the germanium layer is lower than a top of the silicon wafer. The germanium layer comprises the photodetector. A photonic device material that comprises the photonic device is bonded to the silicon wafer without planarization of the silicon wafer.Type: GrantFiled: January 4, 2017Date of Patent: March 27, 2018Assignee: Hewlett Packard Enterprise Development LPInventors: Geza Kurczveil, Di Liang, Zhihong Huang, Raymond G Beausoleil
Patent number: 9923114Abstract: An infrared detector is provided. The infrared detector includes an absorption layer sensitive to radiation in only a short wavelength infrared spectral band, and a barrier layer coupled to the absorption layer. The barrier layer is fabricated from an alloy including aluminum and antimony, and at least one of gallium or arsenic, and the composition of the alloy is selected such that valence bands of the absorption layer and the barrier layer substantially align.Type: GrantFiled: December 1, 2015Date of Patent: March 20, 2018Assignee: THE BOEING COMPANYInventors: Terence J. de Lyon, Sevag Terterian, Hasan Sharifi
Patent number: 9922934Abstract: A package carrier includes a carrier and a light absorption layer. The light absorption layer is disposed on the carrier. The light absorption layer includes a notch at the periphery of the carrier, and the notch is light transmissive so as to expose the carrier to light in a normal direction of the carrier. A semiconductor manufacturing process is also provided.Type: GrantFiled: April 29, 2016Date of Patent: March 20, 2018Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Shih-Hui Wang, Chih-Hung Cheng, Yung-Chi Lin, Wen-Chih Chiou
Optical modulator including multiple quantum well and carrier blocks and 3D image acquisition apparatus including the samePatent number: 9904078Abstract: An optical modulator and a 3D image acquisition apparatus including an optical modulator are provided. The optical modulator is disposed in a multiple quantum well including a plurality of quantum wells and a plurality of quantum barriers, and includes at least one carrier block disposed in the multiple quantum well restricting the carrier movement between the multiple quantum wells.Type: GrantFiled: June 25, 2014Date of Patent: February 27, 2018Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Chang-young Park, Yong-hwa Park, Sang-hun Lee
Patent number: 9906304Abstract: A transceiver comprising a chip, a semiconductor laser, and one or more photodetectors, the chip comprising optical and optoelectronic devices and electronic circuitry, where the transceiver is operable to: communicate, utilizing the semiconductor laser, an optical source signal into the chip via a light pipe with a sloped reflective surface, generate first optical signals in the chip based on the optical source signal, transmit the first optical signals from the chip via the light pipe, and receive second optical signals from the light pipe and converting the second optical signals to electrical signals via the photodetectors. The optical signals may be communicated out of and in to a top surface of the chip. The one or more photodetectors may be integrated in the chip. The optoelectronic devices may include the one or more photodetectors integrated in the chip. The light pipe may be a planar lightwave circuit (PLC).Type: GrantFiled: July 17, 2017Date of Patent: February 27, 2018Assignee: Luxtera, Inc.Inventors: Peter DeDobbelaere, Thierry Pinguet, Mark Peterson, Mark Harrison, Alexander G. Dickinson, Lawrence C. Gunn
Patent number: 9887324Abstract: A light emitting device package is disclosed. The light emitting device package includes a package body including at least one ceramic layer, a submount disposed at the package body, a light emitting device disposed on the submount for emitting ultraviolet (UV)-wavelength light, and an anti-reflection (AR) coating layer disposed around the light emitting device, the AR coating layer being formed of an inorganic coating layer.Type: GrantFiled: September 12, 2014Date of Patent: February 6, 2018Assignee: LG INNOTEK CO., LTD.Inventors: Baek Jun Kim, Hiroshi Kodaira, Byung Mok Kim, Ha Na Kim, Yuichiro Tanda, Satoshi Ozeki
Patent number: 9876946Abstract: An imaging device with low power consumption is provided. A pixel circuit has a configuration of detecting difference data between data of a reference frame and data of a target frame in a pixel, and a peripheral circuit has a configuration of efficiently converting the difference data by A/D conversion so as to obtain high compressibility. Difference data which is encoded by compression is written into a memory element and read sequentially. At this time, the frequency of a clock signal can be lowered in accordance with the amount of data. The read data is expanded and the expanded data is added to the reference frame to constitute an image.Type: GrantFiled: July 27, 2016Date of Patent: January 23, 2018Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventor: Takayuki Ikeda


text:
Introductory Microeconomics
ECON1010 is rated by StudentVIP members:
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NotesView all ECON1010 notes
ECON1010 Full Semester Study Notes
Written by Maxine
All content for the whole semester
28 pages, 4217 words
ECON1010 Final Exam Notes
Written by Laura
Covers textbook chapters 8 to 10 plus relevant lecture content. Diagrams also included
5 pages, 1129 words
ECON1010 Semester Notes
Written by Sophie
Overview of all ECON 1010 lectures during the semester
21 pages, 4007 words
FULL summary for Final Exam
Written by Shelley
Basically, this note includes everything that is needed in the final exam for ECON1010, You will fin...
12 pages, 1606 words
ECON1010 Mid Sem Notes
Written by Laura
Covers all relevant content for ECON1010 mid sem exam
4 pages, 1120 words
ECON1010 Lectures 1-11
Written by Claire
These are lectures 1-11 for ECON1010, lecture 12 was a guest speaker.
25 pages, 3451 words
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Anonymous, Semester 1, 2019
This was a very nice lec. understood each and every bit of it. I can perfectly tutor current student to get a distinction. please reach me at: email@example.com I am an expert writer with over 6 years' experience. I guarantee quality, original content written from scratch and delivered within the shortest time possible. Moreover, I am detail-oriented and will work closely with you to ensure you get a highly customized and well-researched paper.
Anonymous, Semester 1, 2018
Lecturer was very funny and the 20% game was very helpful. However, it was a bit boring if you have any basic economics experience whatsoever. Also, very easy if you are good at high school maths b
Anonymous, Semester 1, 2018
Loved the lecturer's accent
Anonymous, Semester 1, 2018
Really enjoyed this course and the computer game completion for 20% is pretty much a guaranteed pass. I would say as long as you at least read the lecture slides, you'll pass without any problems
Anonymous, Semester 1, 2017
Great course to learn the basics of economics, however sometimes lectures seem to be dragging along. the game is easy to score marks with.
Anonymous, Semester 1, 2016
Very easy subject but interesting content. I did it over the summer and it was very chill. Lectures are easy to follow and the game is quite useful
Anonymous, Semester 2, 2016
Very interesting course, good introduction to fundamental economics principles and covers a lot of topics that come up again in later micro courses. Would recommend even as an elective - you'll learn a lot that will help you understand how the world works and what the news means!
Anonymous, Semester 1, 2015
Very interesting subject even for those not pursuing a business-related career or degree. Provides knowledge about how markets function that is useful. PASS is definitely very useful.
Anonymous, Semester 1, 2014
Introductory and basic concepts to economics. Easy course if you are interested in Maths. The concepts are quite interesting. Attending tutorials and PASS help if you're having trouble with the concepts.

subset: commoncrawl


text:
James Amend
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Continental Deploys Industry-Leading Supercomputer for AI
The cluster provides Continental employees at locations around the world access to the computing power and storage necessary for highly complex and data-intensive developments, including those related to AI.
Beep, Local Motors Collaborate On AV Deployment
Under the agreement, Local Motors will supply Beep with its Olli 2.0 autonomous, electric, 3D-printed shuttles for future customer deployments.
Ford Brings Mobileye On Board for Lifecycle ADAS Contract
Ford says Mobileye will provide its EyeQ family of system-on-a-chip devices and processing software to support SAE Level 1 and Level 2 ADAS in the Dearborn, MI-based automaker's vehicles globally within the Ford Co-Pilot360 Technology package.
AImotive Collaborates With Satellite Specialist to Send Its AI Into Space
AImotive and C3S expect results of the collaboration to accelerate commercialization of a wide range of services for both specialized and mass-market applications.
Amazon Acquisition of Zoox Puts Spotlight on AV Delivery
Las Vegas-based Zoox will remain a stand-alone business and continue its vision to develop "a world-class autonomous ride-hailing experience," Amazon says.
Daimler Taps NVIDIA for AV Tech Deployment to Mercedes
Terms of the deal were not disclosed and the exact technological extent of the operating system is undefined, but the extent of the technology's reach is perhaps boundless as engineers from each organization continue to brainstorm applications.


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text: Psytek(@Cronomi) Tom Secember Hello, Welcome to my Mixcloud! I'm a Belgian dj active in our Goa scene. I usually play darkish Oldskool at night, blended together with obscure Psytrance and Forest Trance. You can also book me for a one style set and I like to play trippy melodic music in the morning too. :) For bookings you can send me a pm here. Psytek(@Cronomi)'s tracks Psytek @ Mini Shishu 2018 (Forest) by Psytek(@Cronomi) published on 2019-05-12T07:41:43Z


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Pictures here
Video coming soon!
On October 7, just past noon, four activists chained themselves to the front entrance of the Citi branch in Harvard Square, Cambridge. The action started as a protest in front of the Bank of America branch a block away before marching down the street to Citibank, where the four activists had already chained themselves to the front door, closing the bank for a period of time. Over 150 people attended the protest, while many more onlookers gathered in Harvard Square.


text:
CopiedWhat is the difference between the GT130 and the GT125 gateways?
The GT125 gateway is only compatible with Mi-Wi devices using a unique communication protocol designed by Sinopé Technologies.
The GT130 gateway uses the Zigbee communication protocol, which is a standard protocol widely used in North America and around the world. The GT130 hub is used to control Zigbee devices designed by Sinopé Technologies. It could potentially be used to control Zigbee devices designed by other companies.
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text: Tweet Photos credit: www.ellecanada.com Photos credit: www.vogue.it Photos credit: www.vogue.it Share this:Click to share on Twitter (Opens in new window)Click to share on Facebook (Opens in new window)Click to share on Google+ (Opens in new window) Related Bytfnow On January 12, 2012 Uncategorized 0 0 Share: Permanent Link Share via Email Related Articles New York Fashion Week: b michael America Couture Fall 2012. @tfnow Lindsay Lohan Stars In Jag Jeans New Spring 2012 Ad. @tfnow PFW 2011: Kanye West S/S12 Collection. Copenhagen Fashion Week: Stine Ladefoged S/S12. Rio Fashion Week: Acquastudio Fall/Winter 2012 Collection. @tfnow Roksanda Ilincic Pre-Fall 2012 Collection. @tfnow 0 Comments Leave a reply Click here to cancel the reply Your email address will not be published. Required fields are marked *CommentName * Email * Website Notify me of follow-up comments by email. Notify me of new posts by email. This site uses Akismet to reduce spam. Learn how your comment data is processed.


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Post to RegisteredNursing.org and 100+ Job Boards with One Submission.
Post a Job
Registered Nurse Jobs in Maryland
Maryland is on the upward curve of the nursing industry with a projected growth rate of 7% from now until 2022, that 7% breaks down to the state being able to offer 2,000 new nursing positions yearly. Maryland RNs are paid approximately $34 hourly on average, but can go as high as $46 per hour with greater experience and qualifications. As a yearly salary RNs would be looking at approximately $71,000 annually as a median range, and potentially increasing to as high as $95,000.
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Post to RegisteredNursing.org and 100+ job boards with one submission: Click Here to Post a Job.
Registered Nursing Salary in Maryland
|Total Employment
|Annual Salary
|United States
|Baltimore-Columbia-Towson, MD
|Salisbury, MD-DE
|Hagerstown-Martinsburg, MD-WV
|Cumberland, MD-WV
|California-Lexington Park, MD
Table data taken from 2018 BLS (http://www.bls.gov/oes/current/oes291141.htm)
RN Jobs in Maryland
Found 262 Jobs
Patient Care Manager - RNGet Details
... Registered Nurse (RN) in good standing with the State Board in which he/she practices. Position Requirements Minimum of one year experience in home health care, or hospice nursing preferred, may be ...Posted By: HCR ManorCare 10 days ago
Registered NurseGet Details
We are currently seeking a PRN Registered Nurse to join our team at North Branch Correctional Institution located in Cumberland, Maryland. Available Shift 8am - 4:30pm; days vary Responsibilities The ...Posted By: MHM 10 months ago
Perm - Dialysis Registered Nurse (RN) - Hemodialysis (Days) Chestertown, MDGet Details
Centra Healthcare Solutions is seeking an experienced Registered Nurse that is licensed or in the immediate process, and qualifies, of obtaining RN licensure in MD to work in SNF / LTC in the ...Posted By: Centra Healthcare 18 hours ago
Per Diem Home Health RN Case ManagerGet Details
As a Home Health Registered Nurse , you will: * Provide admission, case management, and follow-up skilled nursing visits for home health patients. * Administer on-going care and case management for ...Posted By: Kindred At Home 24 days ago
Registered Nurse | RN | PSYC (Contract)Get Details
Psychiatric Registered Nurse (Psych RN) Travel Contract Open in Rockville, MD. !Psychiatric Registered Nurse (Psych RN) Details: * Experienced Psychiatric Nurse Needed! * Contract Length: 13 WeeksPosted By: Favorite Healthcare Staffing 5 months ago
Registered Nurse RNGet Details
Below is a list of your responsibilities as a Registered Nurse (RN) with Corizon Health: * Use your strong assessment skills to evaluate patients, develop and implement the plan of care alongside ...Posted By: Corizon Health 23 days ago
Intensive Care Unit (ICU) Travel Nurse RN - COVID-19 - $61.92/Hour $2972/WeeklyGet Details
Wanderly offers top paying assignments from Wellspring Nurse Source. Compare your offer with the market to maximize compensation. Chat anonymously with recruiters & submit a universal application w ...Posted By: Wanderly.us 8 hours ago
Registered Nurse - Permanent Relocation OpportunitiesGet Details
A great Permanent RN hospital placement is waiting for you in California, call ADEX today. If you're a registered nurse ready for a transformative career and lifestyle change, a permanent nursing ...Posted By: Appcast Agency 13 days ago
RN Registered NurseGet Details
Delivers quality care that is consistent within the scope of practice as outlined by the local state nurse practice act for Registered Nurses. In accordance with local practice acts and regulations ...Posted By: Corizon Health 1 month ago
RN II Cardiac TelemetryGet Details
Valid RN license in the State of Maryland. * * Experience * 1 year RN experience. * * License/Certification/Registration * CPR certification. * * Knowledge, Skills & Abilities * Demonstrated ability ...Posted By: Medstar Health 1 month ago
Travel ICU RN - Intensive Care Unit RNGet Details
* We currently have a client in Cheverly, MD looking for an Intensive Care Unit RN (Traveling ICU RN) Focus Staff is seeking a traveling Certified Intensive Care Unit RN to provide quality patient care ...Posted By: Appcast 16 hours ago
Travel Nurse - PCU/Stepdown RN - PCU/Stepdown Registered NurseGet Details
ADEX Travel Nursing has been employing and servicing nurse travelers, sending them to great destinations around the country. Our vast networking affords us exclusive relationships at top facilities ...Posted By: Adex Healthcare Staffing 1 year ago
Operating Room OR - Registered Nurse RN - Full-time NightsGet Details
Minimum Qualifications Education/Training Valid RN license in the State of Maryland. Experience 1 year nursing experience. Orthopedic OR and scrub experience preferred. License/Certification ...Posted By: Medstar Health 1 month ago
Travel Operating Room RN-Baltimore, MDGet Details
Are you a traveling Operating Room RN? Great! This is the assignment for you! * What are we looking for? * A motivated Operating Room RN with 2+ years experience * Where will you go? * To the ...Posted By: Soliant 10 days ago
Intensive Care Unit (ICU) Travel Nurse RN - $46.20/Hour $1663/WeeklyGet Details
Wanderly offers top paying assignments from Delta Healthcare Providers. Compare your offer with the market to maximize compensation. Chat anonymously with recruiters & submit a universal application ...Posted By: Wanderly.us 5 hours ago
Registered Nurse Lactation Consultant - RNGet Details
Experience 2 years RN experience; 1 year experience working with breastfeeding mothers preferred. License/Certification/Registration Valid RN license in the State of Maryland. IBCLC (International ...Posted By: Medstar Health 1 month ago
Travel TELE RN - TelemetryGet Details
Focus Staff is seeking a traveling Telemetry RN to help us to provide quality patient care during this COVID 19 Crisis. Ask your recruiter if this job qualifies as a crisis rate. Contract Assignment ...Posted By: Appcast 2 days ago
Travel Nurse RN - ICU - Intensive Care Unit - $2,167 per weekGet Details
Discipline: RN * Start Date: ASAP * Duration: 13 weeks * 36 hours per week * Shift: 12 hours, nights * Employment Type: Travel The Intensive Care Unit (ICU) Registered Nurse delivers vital care to ...Posted By: NurseFly 2 months ago
Travel Operating Room Registered Nurse - Baltimore, MDGet Details
Soliant is looking for a Travel Operating Room Registered Nurse for a 13week assignment in Baltimore, MD. We are one of the largest healthcare staffing companies in the country. Because Soliant is ...Posted By: Soliant 7 days ago
RN II Cardiac TelemetryGet Details
Valid RN license in the State of Maryland. * * Experience * 1 year RN experience. * * License/Certification/Registration * CPR certification. * * Knowledge, Skills & Abilities * Demonstrated ability ...Posted By: Medstar Health 1 month ago


text: NASDAQ:CTBICommunity Trust Bancorp Stock Price, Forecast & News Adding Choose a watchlist: Adding You have already added five stocks to your watchlist. Upgrade to MarketBeat Daily Premium to add more stocks to your watchlist. Adding Community Trust Bancorp, Inc. Please log in to your account or sign up in order to add this asset to your watchlist. Log In and Add $32.12 +0.91 (+2.92 %) (As of 08/5/2020 04:00 PM ET) Add Compare Share Today's Range$31.29Now: $32.12▼$32.1850-Day Range$30.25MA: $31.48▼$33.3252-Week Range$26.45Now: $32.12▼$47.54Volume42,040 shsAverage Volume46,230 shsMarket Capitalization$572.38 millionP/E Ratio9.91Dividend Yield4.84%Beta0.74 ProfileAnalyst RatingsAdvanced ChartCompetitorsDividendEarningsFinancialsInsider TradesInstitutional OwnershipHeadlinesOptions ChainSEC FilingsSocial Media Community Trust Bancorp, Inc. operates as the bank holding company for Community Trust Bank, Inc. that provides commercial and personal banking services to small and mid-sized communities. The company accepts time and demand deposits, Keogh plans, and savings certificates, as well as checking and savings, regular, individual retirement, NOW, and money market accounts. It also offers loan products, such as commercial and residential real estate loans; commercial, construction and development, mortgage, and personal loans, as well as consumer, and secured and unsecured loans; and lease-financing, lines of credit, revolving lines of credit, and term loans, as well as other specialized loans, including asset-based financing. In addition, the company provides cash management, safe deposit boxes rental, and funds transfer services; issues letters of credit; and acts as a trustee of personal trusts, executor of estates, trustee for employee benefit trusts, and paying agent for bond and stock issues, as well as an investment agent and depositor for securities. Further, it offers full service securities brokerage, and trust and wealth management services; debit cards; annuity and life insurance products; and repurchase agreements, as well as mobile, telephone, and Internet banking services. As of December 31, 2018, the company operated 79 banking locations in eastern, northeastern, central, and south central Kentucky; 6 banking locations in southern West Virginia; 4 banking locations in northeastern Tennessee; 4 trust offices in Kentucky; and 1 trust office in Tennessee. Community Trust Bancorp, Inc. was founded in 1903 and is headquartered in Pikeville, Kentucky.Read More Beat the Market (BTM) Rank™ 3.0 Analyst's Opinion Consensus RatingCommunity Trust Bancorp has received a consensus rating of Hold. The company's average rating score is 2.00, and is based on no buy ratings, 1 hold rating, and no sell ratings.Price Target Upside/DownsideAccording to analysts' consensus price target of $42.00, Community Trust Bancorp has a potential upside of 32.5% from its current price of $31.70.Amount of Analyst CoverageCommunity Trust Bancorp has received no research coverage in the past 90 days. Previous Next 1.8 Community Rank Outperform VotesCommunity Trust Bancorp has received 199 "outperform" votes. (Add your "outperform" vote.)Underperform VotesCommunity Trust Bancorp has received 357 "underperform" votes. (Add your "underperform" vote.)Community SentimentCommunity Trust Bancorp has received 64.21% "underperform" votes from our community.MarketBeat's community ratings are surveys of what our community members think about Community Trust Bancorp and other stocks. Vote "Outperform" if you believe CTBI will outperform the S&P 500 over the long term. Vote "Underperform" if you believe CTBI will underperform the S&P 500 over the long term. You may vote once every thirty days. Previous Next 5.0 Dividend Strength Dividend LeadershipCommunity Trust Bancorp is a leading dividend payer. It pays a dividend yield of 4.84%, putting its dividend yield in the top 25% of dividend-paying stocks.Dividend GrowthCommunity Trust Bancorp has been increasing its dividend for 39 years.Dividend CoverageThe dividend payout ratio of Community Trust Bancorp is 41.76%. This payout ratio is at a healthy, sustainable level, below 75%.Dividend SustainabilityBased on earnings estimates, Community Trust Bancorp will have a dividend payout ratio of 56.51% next year. This indicates that Community Trust Bancorp will be able to sustain or increase its dividend. Previous Next 1.0 Company Ownership Insider Buying vs. Insider SellingIn the past three months, Community Trust Bancorp insiders have not sold or bought any company stock.Percentage Held by InsidersOnly 5.10% of the stock of Community Trust Bancorp is held by insiders.Percentage Held by Institutions58.80% of the stock of Community Trust Bancorp is held by institutions. High institutional ownership can be a signal of strong market trust in this company. Previous Next 1.9 Earnings and Valuation Earnings GrowthEarnings for Community Trust Bancorp are expected to decrease by -13.50% in the coming year, from $3.11 to $2.69 per share.Price to Earnings Ratio vs. the MarketThe P/E ratio of Community Trust Bancorp is 9.78, which means that it is trading at a less expensive P/E ratio than the market average P/E ratio of about 17.05.Price to Earnings Ratio vs. SectorThe P/E ratio of Community Trust Bancorp is 9.78, which means that it is trading at a less expensive P/E ratio than the Finance sector average P/E ratio of about 16.07.Price to Book Value per Share RatioCommunity Trust Bancorp has a P/B Ratio of 0.92. P/B Ratios below 1 indicate that a company could be undervalued with respect to its assets and liabilities. Previous Next Analyst Opinion: 3.0Community Rank: 1.8Dividend Strength: 5.0Insider Behavior: 1.0Valuation: 1.9 5 -4 -3 -2 -1 -Overall Beat the Market Rank™2.54 out of 5 stars Industry, Sector and Symbol Stock Exchange NASDAQ Industry State commercial banks Sub-IndustryRegional Banks SectorFinance Current SymbolNASDAQ:CTBI Previous Symbol CUSIP20414910 CIK350852 Webwww.ctbi.com Phone606-432-1414Debt Debt-to-Equity Ratio0.10 Current Ratio0.95 Quick Ratio0.95Price-To-Earnings Trailing P/E Ratio9.91 Forward P/E Ratio10.33 P/E GrowthN/A Sales & Book Value Annual Sales$235.58 million Price / Sales2.43 Cash Flow$4.32 per share Price / Cash Flow7.44 Book Value$34.58 per share Price / Book0.93Profitability EPS (Most Recent Fiscal Year)$3.64 Net Income$64.54 million Net Margins24.73% Return on Equity9.41% Return on Assets1.32%Miscellaneous Employees988 Outstanding Shares17,820,000Market Cap$572.38 million Next Earnings Date10/21/2020 (Estimated) OptionableOptionable $32.12 +0.91 (+2.92 %) (As of 08/5/2020 04:00 PM ET) 30 days | 90 days | 365 days | Advanced Chart Receive CTBI News and Ratings via Email Sign-up to receive the latest news and ratings for CTBI and its competitors with MarketBeat's FREE daily newsletter. Community Trust Bancorp (NASDAQ:CTBI) Frequently Asked Questions How has Community Trust Bancorp's stock been impacted by COVID-19 (Coronavirus)? Community Trust Bancorp's stock was trading at $33.75 on March 11th, 2020 when Coronavirus (COVID-19) reached pandemic status according to the World Health Organization (WHO). Since then, CTBI shares have decreased by 5.5% and is now trading at $31.89. View which stocks have been most impacted by Coronavirus. Do Wall Street analysts recommend investors buy shares of Community Trust Bancorp? 1 Wall Street analysts have issued "buy," "hold," and "sell" ratings for Community Trust Bancorp in the last year. There are currently 1 hold rating for the stock, resulting in a consensus recommendation of "Hold." View analyst ratings for Community Trust Bancorp. When is Community Trust Bancorp's next earnings date? Community Trust Bancorp is scheduled to release its next quarterly earnings announcement on Wednesday, October 21st 2020. View our earnings forecast for Community Trust Bancorp. How were Community Trust Bancorp's earnings last quarter? Community Trust Bancorp, Inc. (NASDAQ:CTBI) released its quarterly earnings results on Wednesday, July, 15th. The financial services provider reported $1.11 EPS for the quarter, beating the Thomson Reuters' consensus estimate of $0.38 by $0.73. The financial services provider had revenue of $51.34 million for the quarter, compared to the consensus estimate of $48.55 million. Community Trust Bancorp had a net margin of 24.73% and a return on equity of 9.41%. View Community Trust Bancorp's earnings history. How often does Community Trust Bancorp pay dividends? What is the dividend yield for Community Trust Bancorp? Community Trust Bancorp declared a quarterly dividend on Wednesday, July 29th. Investors of record on Tuesday, September 15th will be given a dividend of $0.385 per share on Thursday, October 1st. This represents a $1.54 dividend on an annualized basis and a yield of 4.83%. The ex-dividend date of this dividend is Monday, September 14th. This is an increase from Community Trust Bancorp's previous quarterly dividend of $0.38. View Community Trust Bancorp's dividend history. What price target have analysts set for CTBI? 1 brokers have issued 1 year price targets for Community Trust Bancorp's stock. Their forecasts range from $42.00 to $42.00. On average, they anticipate Community Trust Bancorp's stock price to reach $42.00 in the next year. This suggests a possible upside of 31.7% from the stock's current price. View analysts' price targets for Community Trust Bancorp. Has Community Trust Bancorp been receiving favorable news coverage? News articles about CTBI stock have trended somewhat negative on Wednesday, according to InfoTrie. The research group identifies positive and negative media coverage by analyzing more than six thousand news and blog sources. The firm ranks coverage of public companies on a scale of -5 to 5, with scores nearest to five being the most favorable. Community Trust Bancorp earned a daily sentiment score of -1.0 on InfoTrie's scale. They also gave news headlines about the financial services provider a news buzz of 5.0 out of 10, indicating that recent media coverage is somewhat likely to have an impact on the stock's share price in the near future. View the latest news about Community Trust Bancorp. Are investors shorting Community Trust Bancorp? Community Trust Bancorp saw a decrease in short interest in the month of July. As of July 15th, there was short interest totaling 175,400 shares, a decrease of 16.3% from the June 30th total of 209,600 shares. Based on an average daily trading volume, of 51,100 shares, the short-interest ratio is presently 3.4 days. Approximately 1.0% of the company's stock are sold short. View Community Trust Bancorp's Current Options Chain. Who are some of Community Trust Bancorp's key competitors? Some companies that are related to Community Trust Bancorp include Truist Financial (TFC), PNC Financial Services Group (PNC), First Republic Bank (FRC), Fifth Third Bancorp (FITB), M&T Bank (MTB), SVB Financial Group (SIVB), KeyCorp (KEY), Regions Financial (RF), Huntington Bancshares (HBAN), Commerce Bancshares (CBSH), Signature Bank (SBNY), Prosperity Bancshares (PB), Zions Bancorporation NA (ZION), East West Bancorp (EWBC) and Cullen/Frost Bankers (CFR). View all competitors. What other stocks do shareholders of Community Trust Bancorp own? Based on aggregate information from My MarketBeat watchlists, some companies that other Community Trust Bancorp investors own include Exxon Mobil (XOM), AT&T (T), Cisco Systems (CSCO), Consolidated Edison (ED), Helmerich & Payne (HP), Johnson & Johnson (JNJ), Lockheed Martin (LMT), Mercury General (MCY), Altria Group (MO) and ONEOK (OKE). Who are Community Trust Bancorp's key executives? Community Trust Bancorp's management team includes the following people: Ms. Jean R. Hale, Chairman, Pres & CEO (Age 72)Mr. Kevin J. Stumbo, Exec. VP, CFO & Treasurer (Age 59)Mr. Mark A. Gooch, Exec. VP & Sec. (Age 60)Mr. James B. Draughn, Exec. VP (Age 59)Mr. Larry W. Jones, Exec. VP (Age 72) What is Community Trust Bancorp's stock symbol? Community Trust Bancorp trades on the NASDAQ under the ticker symbol "CTBI." Who are Community Trust Bancorp's major shareholders? Community Trust Bancorp's stock is owned by a variety of institutional and retail investors. Top institutional investors include Community Trust & Investment Co. (10.19%), Dalton Greiner Hartman Maher & Co. (2.45%), Raymond James & Associates (0.39%), Assenagon Asset Management S.A. (0.24%), Swiss National Bank (0.20%) and UBS Group AG (0.13%). Company insiders that own Community Trust Bancorp stock include Andy D Waters, Charles Anthony W St, Charles J Baird, Charles Wayne Hancock II, Franky Minnifield, James J Gartner and Kevin J Stumbo. View institutional ownership trends for Community Trust Bancorp. Which institutional investors are selling Community Trust Bancorp stock? CTBI stock was sold by a variety of institutional investors in the last quarter, including First Trust Advisors LP, and UBS Group AG. Company insiders that have sold Community Trust Bancorp company stock in the last year include Charles Wayne Hancock II, James J Gartner, and Kevin J Stumbo. View insider buying and selling activity for Community Trust Bancorp. Which institutional investors are buying Community Trust Bancorp stock? CTBI stock was bought by a variety of institutional investors in the last quarter, including Assenagon Asset Management S.A., Community Trust & Investment Co., Swiss National Bank, Dalton Greiner Hartman Maher & Co., SG Americas Securities LLC, WINTON GROUP Ltd, Strs Ohio, and Raymond James & Associates. Company insiders that have bought Community Trust Bancorp stock in the last two years include Charles Anthony W St, and Franky Minnifield. View insider buying and selling activity for Community Trust Bancorp. How do I buy shares of Community Trust Bancorp? Shares of CTBI can be purchased through any online brokerage account. Popular online brokerages with access to the U.S. stock market include Vanguard Brokerage Services, TD Ameritrade, E*TRADE, Robinhood, Fidelity, and Charles Schwab. What is Community Trust Bancorp's stock price today? One share of CTBI stock can currently be purchased for approximately $31.89. How big of a company is Community Trust Bancorp? Community Trust Bancorp has a market capitalization of $568.28 million and generates $235.58 million in revenue each year. The financial services provider earns $64.54 million in net income (profit) each year or $3.64 on an earnings per share basis. Community Trust Bancorp employs 988 workers across the globe. What is Community Trust Bancorp's official website? The official website for Community Trust Bancorp is www.ctbi.com. How can I contact Community Trust Bancorp? Community Trust Bancorp's mailing address is 346 NORTH MAYO TRAIL, PIKEVILLE KY, 41501. The financial services provider can be reached via phone at 606-432-1414 or via email at [email protected] This page was last updated on 8/5/2020 by MarketBeat.com Staff 30 Days of MarketBeat All Access for $1.00 Sign up for MarketBeat All Access to gain access to MarketBeat's full suite of research tools: Best-in-Class Portfolio Monitoring View the latest news, buy/sell ratings, SEC filings and insider transactions for your stocks. Compare your portfolio performance to leading indices and get personalized stock ideas based on your portfolio. Stock Ideas and Recommendations Get daily stock ideas top-performing Wall Street analysts. Get short term trading ideas from the MarketBeat Idea Engine. View which stocks are hot on social media with MarketBeat's trending stocks report. Advanced Stock Screeners and Research Tools Identify stocks that meet your criteria using seven unique stock screeners. See what's happening in the market right now with MarketBeat's real-time news feed. Export data to Excel for your own analysis. Start Your Risk-Free Trial Subscription Here Questions? Get Started with MarketBeat — Read Your Daily NewsletterCheck Out My MarketBeatWatch Our Tutorial VideosAdd a Stock to Your WatchlistSet Up an Instant AlertView a Company's Profile PageView Our Financial CalendarsView Today's Analyst Ratings


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some discrimination. And moreover, you have to remember that whatever you 've gone through, it pales in comparison to the hardships previous generations endured - and they overcame them." (Obama 6) In the speech Obama had presented at the graduation class of 2013 at Morehouse College, he wants them to remember their struggles and be able to overcome them to do what is right. Obama uses a lot of rhetorical appeal such as pathos, such as the fact that he did not have a father figure in his life, yet he
well as refugees from political and religious persecution on the continent" (The British Library et al.). Additionally, Elizabeth I, progressive demeanor and her own interest and education with language(s) and the arts may have helped opened doors for stories that were less confined by strict religious muzzles, and fitting to a growing diverse population. Elizabeth I, who interestingly was known as a theater enthusiast, and in her own right had penned a few


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Hillbilly Hayride
Presented by Northern Starz Children's Theatre
Northern Starz Children's Theatre
5300 Alpine Drive, Ramsey, MN 55303
Call 612.326.6158
Buy tickets online
90 minutes
With intermission
Past performances
|Friday, May 10
|7:00 pm
|Saturday, May 11
|2:00 pm
|Saturday, May 11
|7:00 pm
|Sunday, May 12
|2:00 pm
|Friday, May 17
|7:00 pm
|Saturday, May 18
|2:00 pm
|Saturday, May 18
|7:00 pm
|Sunday, May 19
|2:00 pm
This show is for performed by our 6th-12th grader performers.
The Tollivers and the Calhouns are always fussin' 'an' a-feudin', which makes things difficult for Emmy Lou, a Tolliver, and Lee Roy, a Calhoun. The story of the 200-year old battle even appears in a scandal sheet 'Strange But True.' A couple of near-bankrupt New York publishing houses send agents to sign up the conflicting families. It ain't easy having to go to the town of Lonesome Polecat.
Adults: $12
Students (3-18): $8
Seniors: $8
Reminder: Tickets may not be exchanged or refunded after purchase.


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very good locality No water scarcity surrounded by schools 100% vastu
Semi furnished. Gated community,covered parking with children park facility
We are the proud owners of this 2 Bhk apartment available in Aishwaryam flats, Chennai. It is a resale and ready for possession Apartment. The unit is located on the 1st floor and has a 805 sq. ft. It has vitrified flooring. With a french type balcony and Vastu available. The ownership is freehold type. It is a corner property. The apartment has 1 covered parking. Location : Jalladianpet, Pallikaranai, Medavakkam, (Next to Jayachandran Textiles Pallikarnai)
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We are the proud owners of this 2 bhk apartment available in arun excello, opp to : Vallakottai murugan temple mathur village orgadam, kanchipuram. This unfurnished apartment is a 1-5 year old, priced approximately at rs. 3960 per sq. Ft. Or rs. 39 lakhs. It is a resale and a ready to move in apartment. The unit is located on the 6th floor and has a super built-Up area of 985 sq. Ft. It has vitrified flooring. It has 2 bathroom(s) and 1 balcony(s). The ownership is freehold type. The property offers the best in class facilities such as lift(s), park, visitor parking, water storage, piped-Gas, swimming pool, fitness centre/gym, club house/community center, shopping centre, water softening plant, security personnel, waste disposal and rain water harvestin. It is positioned in a gated society. It offers an excellent view of the main road. The apartment has 1 covered car parking
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The house is semi furnished with wardrobes in all the bedrooms. Modular kitchen. western bathroom attached to the bedroom , 2 balconies, lift, open car and bike parking. All electric fitting is done. It has easy access to market, schools, hospitals, banks and ATM's as well. ,This is a gated security with amenities like children play area and Gym. It has a 24-hr water supply.


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Follow us
Paw-rtners in binge Image: Thinkstock
Love for our pets has reached epic heights — special pet taxi services in Mumbai, sick leave for dogs in Italy, emotional support for peacocks in the US — so it should come as no surprise that our four-legged friends have infiltrated our entertainment habits as well. According to a new survey released by Netflix, when it comes to Netflixing, 88 per cent of Indian members have watched Netflix with their pets, as compared to 74 per cent globally.
And the reason behind it is simple: watching a show with pets means no spoilers and no cheating. Not only do pets never hog the remote or judge your entertainment tastes (well, maybe), they make the perfect paw-rtners (geddit?) for impromptu cuddles — 44 per cent of Indian bingers turn to their furry friends for comfort during a sad or scary scene, and 39 per cent talk to them about the show or movie they were watching.
Though you should be warned that pet bingeing can also be 'ruff'. A considerable number of respondents (43 per cent) have moved from where they were sitting, so their pet would be more comfortable, several (31 per cent) have bribed them with treats to watch longer, and some (30 per cent) have even gone so far as turning off a show because their pet didn't appear to like it. Yup, the snuggle is real.
So what shows are getting the loudest bark and meow? Dog and cat owners in India are likely to go for comedy with a high dose of drama and adventure — Bring on Friends from College, Alias Grace, and A Series of Unfortunate Events, and, a unanimous winner, Stranger Things.
Done with all of the above? We recommend Lost in Space (premiering April 13) for a thrilling journey with the Robinson family. Psst, let us know how many licks the show got.
Read more:
Twitter is advocating for Charlie, the guiltiest dog you've ever seen. And it's adorable
The forbidden fruit of our childhood, Boom, is on Netflix. And we dared to watch it
13 Reasons Why Season 2 will not be streamed on Netflix anytime soon


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How much is a 10 ton boiler - ilseoehlenschlager.nl. how much wood chip will consume in a 10 ton boiler Vertical . Vertical type automatic LPG boiler is once through structure boiler with small steam capacity, the efficiency is about 96%, it could generate steam within 3~5 minutes.
The company has a registered capital of more than 100 million yuan and a production area of 120,000 square meters. It is one of the leading enterprises in the country with the strength of boiler …
2019-12-5 · Compare boiler prices & find out how much your new gas, oil, combi, heat-only or system boiler will cost. Plus Which? experts reveal how to get the best heating engineer quote & insider tips for getting a good boiler installation.
how much diesel consumption for 2 ton boiler – CFBC Boiler .. Amount of fuel required in 1 tph boiler depends on type of fuel used in boiler i.e. different fuel have different calorific value Fuel Consumption = steam quantity* latent heat / Efficiency * Calorific Value How much low pour fuel oil is required to generate 1 ton of steam, per hour, in boilers 2 Upvotes · Answer requested by.
How Much Diesel A Boiler 200Kw Need Per Day. How much does a standby generator cost to install? How much does a standby generator cost to install? Standby generators come in a wide variety of sizes, varying in cost from just under $2,000.00 to $20,000.00 and more. Installation costs can also vary widely.
2019-9-10 · Diesel Fired Steam Boiler Consumption 2018-08-15 11:13:43. At present, the fuel consumption of diesel fired steam boilers is one of the concerns of many oil-fired boiler customers, because as a clean energy boiler, light diesel oil is the most widely used oil fuel for fuel-fired steam boilers. Although the emerging methanol fuel is also very environmentally friendly, there are more
2019-12-7 · Oil boilers tend to have a weaker flow of hot water than a gas combi or cylinder boiler, and the temperature will decrease as you use more water. Running costs of oil boilers. Below is the running costs for oil boilers, along with those for other common fuel types. Boiler Running Costs
2017-6-3 · It is assumed that boiler feedwater preheat from ambient to condensate temperature (usually about 200°F) will be done by heat exchange against a process stream, outside the boiler island battery limits, with only some "top-up" heat recovery against hot boiler blowdown. The use of steam to preheat boiler feedwater was common when energy
How Does an Oil-Fired Boiler Work? Common Application. Circulation. A pump is used to circulate the water through the piping and then back to the heating boiler. The water has cooled during its journey and, upon mixing with the water already in the boiler, will cause a drop in temperature. A temperature sensor in the boiler water is connected
V8 Powerstroke diesel engine. The vehicle itself is leather equipped and has many gadgets – each one is unique. The camper is much larger than any other camper in Iceland. It is built for 4 adults, however the lower bed is ca. 180 cm. Inside the camper you will find a toilet and a warm water boiler. Learn More
V8 Powerstroke diesel engine. The vehicle itself is leather equipped and has many gadgets – each one is unique. The camper is much larger than any other camper in Iceland. It is built for 4 adults, however the lower bed is ca. 180 cm. Inside the camper you will find a toilet and a warm water boiler. Learn More


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Enforcement officers dispatched to quell Mamusa taxi conflict
Durban - Enforcement officers have been dispatched to Schweizer-Reneke in the Mamusa municipality of the North West province to quell ongoing tensions in the local taxi industry.
On Monday, provincial traffic authorities conducted a blitz amid ongoing conflict between two rival taxi associations, one of which was found to be working without permits.
The province's community safety MEC, Sello Lehari, urged operators on Tuesday to find an amicable solution to the conflict before the situation escalated.
"Most taxi operators resolve their differences through violence and that is not how it is supposed to be. You must learn the art of engagement, negotiation and conflict resolution because violence will never be the solution to any problem," said Lehari.
"Taxi operators should desist from resolving problems with violence and those operating without licences must stop doing so with immediate effect," added Lehari, who will meet the operators next week.
He said departmental officials would be "on the ground" to seek interventions.
"When taxi operators are at loggerheads, it is our people who bear the brunt and suffer most because they rely on these taxis to transport them to and from work. We cannot allow the situation to remain unattended."
Lehari said his intervention in Mamusa was part of North West premier Job Mokgoro's appeal to all departments to intensify service deliver in the embattled municipality.
African News Agency (ANA)


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