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Ultralow Intersubband Absorption Saturation Intensity at Communication Wavelength Achieved in Novel Strain Compensated InGaAs/AlAs/AlAsSb Quantum Wells Grown by Molecular Beam Epitaxy

We have markedly improved the optical properties of extremely thin quantum wells (QWs) required for ISBT devices operating at optical communication wavelengths using novel InGaAs/AlAs/AlAsSb QW structures with 4–7 monolayers (MLs) of AlAs. The intersubband saturation intensity (Is) was reduced to 3 fJ/µm2. This represented an IS reduction of nearly 3 orders of magnitude relative to that of the previous samples, whether or not the sample had a 1-ML AlAs interface. In this paper, we report the properties of novel InGaAs/AlAs/AlAsSb quantum wells grown by molecular beam epitaxy, and discuss the linear and nonlinear optical responses of ISBT.