{'fraction_non_alphanumeric': 0.03284072249589491, 'fraction_numerical': 0.006568144499178982, 'mean_word_length': 4.980392156862745, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Performance Enhancement of 4T-IFGC DRAM in 7nm NC-FinFET Technology Node

In this paper, we propose a performance enhanced 4T-Internal Feedback Gain Cell (IFGC) Dynamic Random Access Memory (DRAM) based on 7nm Negative Capacitance (NC) FinFET node. We propose a high-performance architecture of the NC-FinFET based DRAM cell exploiting unique characteristics of NC-FinFETs and observe that the proposed cell exhibits superior read and write delay, Data Retention Time (DRT), and leakage power as compared to the conventional DRAM. We then suggest a body biasing scheme to further improve the DRT of gain cell.