{'fraction_non_alphanumeric': 0.02358490566037736, 'fraction_numerical': 0.01179245283018868, 'mean_word_length': 5.242647058823529, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Gamma‐ray radiation on P‐doped Si nanoparticles towards the Li+‐storage performances

The high theoretical capacity of Si makes it a promising anode material for lithium ion batteries. However, the poor electrical conductivity and large volume expansion during lithiation/delithiation hinders its electrochemical performances. Herein, we report a γ irradiation treatment method to prepare P‐doped Si nanoparticles. The sample exhibits a capacity of 1698 mAh/g at 0.1 C rate after 100 cycles, which is about 3 times larger than that of undoped Si. The rate performance of γ irradiated P‐doped Si is also highly improved when compared to P‐doped Si without γ irradiation treatment. The enhanced performance can be attributed that γ irradiation can facilitate the phosphorus doping into Si lattice, which can enhance the electrical conductivity of Si.