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GaN-Based High-Efficiency Class AB Power Amplifier Design for Sub-6 GHz 5G Transmitter Systems

This document presents a GaN-Based Class AB Power Amplifier design for 3.3–3.6 GHz frequency aiming for sub-6-GHz 5G transmitter systems. The design uses the Qorvo QPD1009 GaN on SiC HEMT RF transistor. GaN technology is selected after comparing different transistor processes because of its high breakdown voltage, high current density, and high thermal conductivity. Simulation results reveal a 20 dB linear gain, > 41 dBm output power, and > 55% power-added efficiency (PAE) at the 3-dB compression point. The measured small-signal gain is quite consistent with the simulation results. At the same time, the output power and the corresponding PAE are lower than the simulation outcomes, yielding an output power of ∼38dBm and a PAE of ∼41%.