{'fraction_non_alphanumeric': 0.028093645484949834, 'fraction_numerical': 0.0, 'mean_word_length': 5.448275862068965, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Transparent electronics and prospects for transparent displays

Transparent electronics is a nascent technology whose objective is the realization of invisible electronic circuits. Part of the impetus for the development of transparent electronics is the recent availability of p-type transparent conductive oxides (TCOs). With the emergence of p-type TCOs, in addition to conventional n-type TCOs such as indium-tin oxide, tin oxide, and zinc oxide, fabrication of transparent bipolar electronic devices becomes feasible. The first part of this paper reviews TCOs and discusses our work in the development of p-TCOs and alternative TC materials (e.g. sulfides). We have recently invented a novel, n-channel, accumulation-mode transparent thin-film transistor (TTFT). This TTFT is highly transparent, has very little light sensitivity, and exhibits electrical characteristics that appear to be suitable for implementation as a transparent select-transistor in each pixel of an active-matrix liquid-crystal display (AMLCD). Moreover, the processing technology used to fabricate this device is relatively simple and appears to be compatible with inexpensive glass substrate technology. The second part of this paper focuses on TTFTs. If transparent electronics is employed to realize transparent back-plane electronic drivers on transparent substrates, fabrication of a transparent display becomes feasible. The third part of this paper offers an approach for realization of a transparent display.