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Crystal orientations of β‐Ga2O3 thin films formed on n‐plane sapphire substrates

We have used X‐ray pole figure analysis to study crystal orientations of β‐Ga2O3 thin films deposited on (113) n‐plane sapphire substrates by gallium evaporation in oxygen plasma. The films were strongly (−201)‐oriented. However, the (−201) plane of β‐Ga2O3 on the (113) n‐plane sapphire was inclined along the (110) a‐plane. Crystals of (−201)‐oriented β‐Ga2O3 exhibit a threefold symmetry in which the β‐Ga2O3 crystal is rotated by increments of 120° from the direction of the c‐axis on the a‐plane of sapphire. The crystal orientation of β‐Ga2O3 was explained by comparing oxygen atom arrangements on the β‐Ga2O3 plane in three different configurations and on the (113) n‐plane sapphire substrates.