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A 30 MHz-2.7 GHz High-Gain Stacked-FET Power Amplifier

This paper presents a 30 MHz-2.7 GHz broadband high-gain power amplifier (PA) in 0.25 µm GaAs PHEMT technology. The fabricated two-stage PA obtains a small signal gain higher than 35.0 dB and saturated output power of 37.2±1.6 dBm from 30 MHz to 2.7 GHz, with a peak power added efficiency (PAE) of 46.2% at 500 MHz. To our knowledge, this is the first report to achieve the highest gain and output power in broadband GaAs amplifier below 2.7 GHz.