{'fraction_non_alphanumeric': 0.0196078431372549, 'fraction_numerical': 0.015931372549019607, 'mean_word_length': 5.75206611570248, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Realization of high performance ferroelectric-gate FET nonvolatile memory using p-type Si nanowire channel

We successfully fabricated ferroelectric-gate nonvolatile memory devices using a p-type Si nanowire coated with Omega-shaped gate organic ferroelectric poly(vinylidene fluoride-trifluoroethylene). Our FEFET memory devices exhibits excellent memory characteristics with a large modulation in channel conductance between ON and OFF states exceeding 105, a long retention time of over 5×104 sec and a high endurance of over 105 programming cycles while maintaining an ION/IOFF ratio higher than 103. This result offers a viable way to fabricate a high performance, high density nonvolatile memory device using a low temperature fabrication processing technique, which makes it suitable for flexible electronics.