{'fraction_non_alphanumeric': 0.035483870967741936, 'fraction_numerical': 0.001075268817204301, 'mean_word_length': 5.248322147651007, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Effect of light intensity on performance of silicon-based thin film solar cells

Theoretical and experimental studies were performed to explore the effect of light intensity on the performance of silicon-based thin film solar cells. The theoretical study was conducted using AMPS-1D (Analysis of Microelectronic and Photonic Structures) to analyze how the device structure affects the performance of silicon-based solar cells under various concentration ratios of sunlight. We calculated a-Si:H and μc-Si:H p-i-n type single-junction solar cells, and also experimentally evaluated a-Si:H, a-SiO:H and μc-Si:H solar cells. From both simulation and measurement results, we confirmed that the Voc logarithmically increases with increasing the light intensity. Moreover, from simulation results, we also observed that the defect density and thickness of i-layer strongly influence the light-intensity dependence of a-Si:H solar cells.