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An ultra low-voltage, ultra low-power CMOS mixer using the body effect

A fully differential ultra low-voltage, ultra low-power down-conversion mixer is presented in this paper. The mixer is designed using four-terminal MOS transistors. The radio-frequency (RF) and local-oscillator signals are applied to the gate and bulk of the devices, respectively. The proposed circuit is designed and simulated in the TSMC 0.18_µm CMOS process, with a 1.9GHz RF signal; the simulation results show that the proposed mixer has a conversion gain of 8dB, IIP3 of −10.6dBm and SSB noise figure of 12.7dB. The total power consumption in the 0.5 V supply voltage is 1.32mW.