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A method for determination of depletion width of single and double gate junction less transistor

This paper presents a method for determining the depletion width of single and double gate Junction Less transistor. By solving 1D Poisson's equation the depletion width expression is obtained. The variation of depletion width for both n-channel and p-channel device with doping concentration, gate voltage, drain to source voltage and dielectric constant of gate dielectric are shown.