{'fraction_non_alphanumeric': 0.030303030303030304, 'fraction_numerical': 0.01036682615629984, 'mean_word_length': 5.121951219512195, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
High-Efficiency Perovskite Quantum-Dot Light-Emitting Devices by Effective Washing Process and Interfacial Energy Level Alignment.

All inorganic perovskites quantum dots (PeQDs) have attracted much attention for used in thin film display applications and solid-state lighting applications, owing to their narrow band emission with high photoluminescence quantum yields (PLQYs), color tunability, and solution processability. Here, we fabricated low-driving-voltage and high-efficiency CsPbBr3 PeQDs light-emitting devices (PeQD-LEDs) using a PeQDs washing process with an ester solvent containing butyl acetate (AcOBu) to remove excess ligands from the PeQDs. The CsPbBr3 PeQDs film washed with AcOBu exhibited a PLQY of 42%, and a narrow PL emission with a full width at half-maximum of 19 nm. We also demonstrated energy level alignment of the PeQD-LED in order to achieve effective hole injection into PeQDs from the adjacent hole injection layer. The PeQD-LED with AcOBu-washed PeQDs exhibited a maximum power efficiency of 31.7 lm W-1 and EQE of 8.73%. Control of the interfacial PeQDs through ligand removal and energy level alignment in the device structure are promising methods for obtaining high PLQYs in film state and high device efficiency.