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Specular spectroscopic profilometry for the sub-0.18-um polySi-gate processes

Specular Spectroscopic Profilometry (SSP), or Phase Profilometry (PP), has been proposed for in-situ/in-line patterned thin-film measurements. This is usually accomplished by using a rigorous electromagnetic theory to simulate the optical responses of gratings with different profiles, and by using spectroscopic ellipsometry/reflectometry to measure 1-D gratings. In this paper, specular spectroscopic profilometry is applied in DUV lithography and etch processes as a profile extraction metrology. One focus-exposure experiment is conducted by using 0.18 micrometer lithography technology, another focus-exposure experiment is conducted by using 0.18 micrometer lithography and etch technology. Comparison between the measurement from CD-SEM, CD-AFM and PP are discussed and explained.