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High-Q spiral inductors with multilayered split-ring resonator (SRR) patterned ground shields

This paper demonstrates a new concept of multilayered patterned ground shield (PGS) for improving Q-factor of a Si-based spiral inductor. The impact of left-handed behavior of complementary split ring resonator (CSRR) and split ring resonator (SRR) patterns to realize a high inductance in the ground shield is explained through an equivalent circuit model. The proposed two layer patterned ground shield is shown to improve the Q-value of on-chip spiral inductors by 23.7%.