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P‐1.10: Mobility identification in oxide field‐effect transistor

Amorphous metal oxide semiconductors (AMOS) envision a future of large-area, robust, and transparent electronics. Pristine AMOS such as InGaZnO exhibit field-effect mobility in tens of cm/(V·s) [1] and higher values around 100 cm/(V·s) have only been achieved by incorporating nano-material composites or partial capping layers [2]. Here we demonstrate simply depositing SiNX and SiOX encapsulation layers at a low temperature with proper annealing, however, leads to surprisingly high performance in thin-film transistors (TFTs) [3]. The field-effect mobility in long-channel TFTs (200 μm length) reaches 345 cm/(V·s) in the linear regime and 402 cm/(V·s) in the saturated regime, respectively. On-off ratio remains high up to 10 and reliability during bias-stressing has been improved as compared with regular IGZO TFTs. The enhancement in the drain current and on-off ratio is remarkable in the long-channel devices (e.g. 40 times in 200 μm long transistors) but becomes much less pronounced in short-channel device (e.g. 2 times in 5 μm long transistors). A series of characterizations suggest that the enhanced mobility is not attributed to the improvement of intrinsic mobility but closely related to the reduced oxygen vacancies and stabilized hydrogen that probably heal the defect states. This study show clearly that a thorough analysis is necessary to understand the origin of very high apparent motilities in thin-film transistors or field-effect transistors with advanced semiconductors. Another issue that would cause mobility overestimation is the non-ideal injection. In the saturation regime, if the device operation transit from the schottky mode to the TFT mode, the mobility extracted via classic Shockley equations would rise abruptly to a ‘peak’ and then decrease drastically. To clarify this situation, we developed the generalized gated-four point method (GGFP) to exclude the contact effects and identify the intrinsic mobility in all operation regimes by detecting the channel potential insitu. Experimental and simulated results confirmed the accuracy and applicability of the proposed method [4].