{'fraction_non_alphanumeric': 0.015384615384615385, 'fraction_numerical': 0.01098901098901099, 'mean_word_length': 5.601449275362318, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
The Electrical Performances of Monolayer MoS2-Based Transistors Under Ultra-Low Temperature

The Schottky barrier between 2D materials and metal always play an important role in the determination of the electrical and optical properties of the transistors. In this work, the Schottky barrier between Monolayer MoS2 and Cr has been carefully investigated under different temperature. The Schottky barrier height of MoS2 and Cr is calculated to be 0.189 eV under room temperature. As the temperature decreases, the contact resistance between MoS2 and Cr increases according to the output curves. The change mechanism is further analyzed using the photoluminescence spectrum under different temperatures. This work investigates the electronic and optical characteristics of MoS2-based FET under low temperature and provides guidance for better designing the layered transition-metal-dichalcogenides based devices.