{'fraction_non_alphanumeric': 0.028444444444444446, 'fraction_numerical': 0.012444444444444444, 'mean_word_length': 5.7023809523809526, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Identification and quantification of 4H-SiC (0001)/SiO2 interface defects by combining density functional and device simulations

In this work, we use Density Functional Theory (DFT)-based electronic structure calculations, together with 2D-Device simulations and experiments, to identify and quantify mobility-limiting defects at the 4H-Silicon Carbide (0001) / Silicon Dioxide interface of a Silicon Carbide (SiC) DMOSFET channel. DFT simulations are performed on a variety of possible interfacial defects including the single Carbon interstitial and the Carbon dimer interstitial to calculate their projected Density of States (pDOS) and energy levels. A unique methodology is presented to determine the defect energy levels and corresponding defect concentrations along the channel using DFT calculations, 2D-Device simulations and device I-V measurements. By comparing the results obtained from DFT and 2D-Device simulations, we identified single Carbon interstitials to be the main contributor to mobility-limiting near-interface traps. The defect concentration was also calculated for various locations in the channel.