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ZnO Thin Films Fabricated by Plasma-Assisted Atomic Layer Deposition

We investigated zinc oxide (ZnO) thin films prepared by plasma-assisted atomic layer deposition (PA-ALD), and thin film transistors (TFTs) with the ALD ZnO channel layer for application to next-generation displays. The dependences of the electrical characteristics of the fabricated TFTs on the plasma condition were evaluated. The plasma injection time dependence of the transfer characteristics, the refractive index, and the impurity concentration revealed that insufficient oxidation degrades the performance of ZnO TFTs. On the basis of the experimental results, high-performance ZnO TFTs can be obtained by PA-ALD at a low temperature.