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Phase transitions of Ge12Sb88 thin films on high- and low-thermal-conductivity substrates and their potential applications in storage

This study examined the phase-change Ge12Sb88 films that are fabricated through radio-frequency reactive magnetron sputtering to substrates with varying thermal conductivity. The in situ resistance was measured, and x-ray diffraction was conducted to investigate the phase-change behavior of the films under adjustments to the heating and annealing temperature. Differences in the films’ band gaps were determined by a spectrometer. The results were as follows: (a) the initial resistance levels of the films on low-thermal-conductivity substrates were higher than those on high-thermal-conductivity substrates. Resistance ratios were in the range of 102–103. The substantial changes in resistance influenced the characteristics of accelerating switching time and reduced the power consumption of the investigated materials. (b) Because of the partial crystallization of the films, an additional phase transition (from face-centered cubic (fcc)1 to fcc2) was observed among thin films on low-thermal-conductivity substrates. This phase transition can be leveraged in the development of data storage devices.