{'fraction_non_alphanumeric': 0.04424778761061947, 'fraction_numerical': 0.035398230088495575, 'mean_word_length': 4.1938775510204085, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Properties of N-Polar GaN Films Grown by MOCVD on C-Face 6H-SiC Substrate

High quality N-polar GaN films were grown by MOCVD on C-face 6H-SiC substrate etched by KOH eutectics at 300°C for 5min. A 50 nm high-temperature AlN buffer layer was used to release the lattice mismatch stress between GaN and SiC substrate. The N-polar GaN films grow on the C-face 6H-SiC substrate etched by KOH eutectics have a high crystalline quality and smooth surface. The full-width-at-half-maximum (FWHM) of (002) and (102) XRD spectra were 347.4 and 501.5 arcsec., respectively. The root-mean-square (RMS) of 3μm×3μm is 0.666 nm. The luminescence property of the N-polar GaN films was studied. The band-edge emission of photoluminescence spectra was at 364.6 nm with weak yellow luminescence near 560 nm. The stress in the films was also calculated from Raman spectra. The results indicated a tensile stress in the N-polar GaN films, which is mainly caused by mismatch of thermal expansion coefficient between GaN and SiC substrate.