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Experimental Testing and Finite Element Modeling of Bump Wafer Probing

The purpose of this paper is mainly to develop a method to simulate the bump height variation and probe mark profile for Eutectic (Sn63/ Pb37) bump wafer probing with continuing-touchdown probing. Certainly, the bump height variation and probe mark area on the solder bump influence the quality of the wafer probing and further impacts reliability of the packaging process after wafer probing to cause issues of cold-joint and needle damage. A three-dimensional computational model of was developed to analyze the contact phenomena between the vertical needle and the solder bump. Finite element simulation software, ANSYS, is used to analyze the loading force distributed on the vertical needle with various overdrives. In addition, the results of the bump height variation and probe mark area, which predicted by the finite element method (FEM), were verified against the on-line experimental results. Finally, the results predicted by the finite element model is consistent with experimental results and the numerical method presented in the paper can be used as a useful evaluating method to support the choice of suitable probe geometry and wafer probe testing parameters.