{'fraction_non_alphanumeric': 0.02697841726618705, 'fraction_numerical': 0.0017985611510791368, 'mean_word_length': 4.863157894736842, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Gate Work Function Engineering for Nanotube-Based Circuits

The impact of different work function metal gates on the performance of individual nanotube transistors and ultimately an entire nano-circuit is presented. The use of an Al-gate, in the case of a carbon nanotube device, translates directly into a threshold-voltage shift relative to a Pd-gated FET, corresponding to the work function difference between the two metal gates. In this way, a CMOS-type 5-stage ring oscillator on an individual carbon nanotube, is realized without the use of dopants.