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Recent results on the factors governing the energy resolution in compound semiconductors to be used as future spectroscopic detectors for hard x-ray astronomy

The next generation of x-ray astrophysics missions may well extend the energy range beyond the current limit of 10 keV suited by existing x-ray astrophysics space missions such as ASCA or future missions such as AXAF and XMM to be launched in the next few years. To address with a high degree of sensitivity the astrophysical problems associated with x-ray emission in the x-ray band from 10 keV to 100 keV a significant extension of the capabilities of focusing x-ray optics and imaging broad band hard x-ray detectors will be required. In this paper we present experimental result from the study of the x-ray energy response form two compounds semiconductors: GaAs and CdZnTe. The limitations on the energy resolution due to leakage current, incomplete charge collection and spatial non-uniformities are presented based on the detailed mapping of the energy response of each type of detector to highly monochromatized synchrotron radiation and radioactive sources in the photon energy range from 1 keV to 60 keV. Correlation of the observed response variations with crystal morphology and imperfections are described using collimated synchrotron radiation in the soft x-ray energy range as a diagnostic tool. Energy resolutions around and well below 1 keV have been measured at photon energies between 1 keV and 60 keV. It is clear that based on these result imaging arrays could be fabricated which will provide an important advance in the capabilities of detectors in this energy range.