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Effects of applied magnetic fields on direct and indirect excitons in coupled semiconductor quantum wells

We have investigated magnetic‐field effects on the direct‐ and indirect‐exciton dispersions and on the exciton effective mass in the plane perpendicular to the applied field, within the variational framework and effective‐mass approximation, for coupled GaAs–(Ga,Al)As quantum wells. The simple hydrogen‐like envelope wave function we have used provides the expected behavior for the exciton dispersion law in a wide range of the center‐of‐mass momenta, and leads to an analytical expression for the exciton effective mass. Theoretical results for the magnetic‐field dependent exciton dispersion and effective mass are in quite good agreement with available experimental measurements. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)