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Resonance Raman scattering by optical phonons in GaAs near the E0 band gap.

We report the resonance of the first-order Raman scattering by longitudinal and transverse optical phonons in GaAs very 
 
near to the E 0 band gap at 100 K. The resonance enhancement observed at E 0 for 
 
deformation-potential (TO,LO) and Frohlich-interaction-induced (LO) scattering is about 100 times larger than calculated for 
 
uncorrelated electron-hole pairs. The effect is attributed to the Coulomb correlation of discrete and continuum excitons and agrees 
 
with Martin's calculation of these effects. The Faust-Henry coefficient is found to be nearly independent of frequency in the region of 
 
our measurements (C=-0.6±0.2).