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Recombination Activity in Directly Bonded High Resistivity Silicon Wafers Measured by the Photoconductance Decay Method

Characterisation of bonded high-resistivity silicon wafers by the microwave photoconductance decay (µPCD) technique has been performed. Bonding is shown to drastically alter the bulk recombination activity of the wafers. The technique allows to separate between bulk and interface recombination and appears as a powerful tool to evaluate the quality of the bonded interface.