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Multiple gate oxide technology using nitrogen implantation and high-pressure O2 oxidation

We demonstrate a novel process for multiple gate oxide technology using a combination of nitrogen implantation and high-pressure O2 oxidation. Using this approach we realize a range of different thicknesses from 26 to 140 Å simultaneously on a silicon wafer. A secondary ion mass spectroscopy profile shows an identical nitrogen peak that cannot be obtained by conventional oxynitridation. A vertical high-pressure (VHP) O2 device shows a leakage current about ten times lower and only ∼40 mV difference in VFB compared to the SiO2 device when the nitrogen dose is 7 × 1014 atoms cm−2. The elimination of boron penetration is observed after a drive-in of 1050 °C for 30 s. In this work, we demonstrate a novel approach to realize >500% difference in the oxide growth rate using VHP oxidation (15–25 atm at 750–850 °C) and N implantation (between 1 × 1014 and 3 × 1015 atoms cm−2).