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Low Thermal Budget Crystallization of Amorphous Silicon by Nanoclusters

A low thermal budget crystallization of amorphous-silicon (a-Si) film by nickel nanoclusters was investigated. At 400°C, which the already fabricated metal interconnects can endure, 5 nm sized clusters with densities of more than 2 × 10 10 cm -2 fully crystallized the a-Si film. From electron microscopies, although a single nanocluster produced a single-grain growth of up to 100 nm, its small Ni quantity could not induce lateral crystallization. From Raman spectroscopy, the crystalline volume fraction of a crystallized film was about 0.7, and this film showed passable Hall mobility of 4.55 cm 2 /V s.