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Theory of the electronic properties of delta -doped layers with DX centers in semiconductor heterostructures.

We attempt to build a flexible and accurate theoretical model for the electronic properties of selectively doped semiconductor heterostructures based on a two-band k.p effective-mass-approximation Hamiltonian that includes nonparabolicity, stress, piezoelectric, finite-temperature, many-body, and DX-center effects. We present quantitative self-consistent results for a variety of δ-modulation-doped semiconductor heterostructures with the aim of optimizing the electronic density in the active region as a function of configuration, including [001] and [111] interfaces for device applications. The presence of DX centers leads to the prediction of saturation of the carrier density with a characteristic capacitance discontinuity as the δ-doping concentration is increased