{'fraction_non_alphanumeric': 0.02930728241563055, 'fraction_numerical': 0.014209591474245116, 'mean_word_length': 4.962962962962963, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Electrical Characteristics of p-Type Bulk Si Fin Field-Effect Transistor Using Solid-Source Doping With 1-nm Phosphosilicate Glass

For scaling of bulk Si Fin field-effect transistor (FinFET), suppression of short-channel effects is required without ON-state current degradation. In this letter, solid-source doping for channel doping using 1-nm phosphosilicate glass was demonstrated on both p-type (100) Si substrate and p-type bulk Si FinFET. The profile of phosphorus in p-type (100) Si substrate was analyzed by secondary ion mass spectrometry and it was diffused deeper with higher thermal budget of anneal. Fabricated bulk Si FinFETs with using 1-nm phosphosilicate glass showed threshold voltage shift with several anneals at 1-μm and 70-nm gate lengths. Hole mobility at 1-μm gate length and transconductance at 70-nm gate length were also reduced due to increase in impurity concentration of phosphorus diffused by anneals into Fins. Phosphorus diffusion into Fins with using 1-nm phosphosilicate glass was investigated and phosphorus behavior after anneal was clarified by electrical data of p-type bulk Si FinFETs.