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Reliability Challenges in Advanced Technology Node: from Transistor to Circuit (invited)

With the dimension of transistor scaling down to 3nm, device and circuit reliability attract increasing attentions in digital and analog design. Self-heating effects must be taken into account due to the introduction of FinFET structure, which will be more serious with thinner and higher Fin shape optimization and future GAA device. Self-heating related qualification is also critical, since it may impact the HCI, EM and TDDB. In addition, layout dependent effect is another important issue and is found to be more serious in smaller dimension. Finally, aging induced variation has also been shaving away the design margins, especially in SRAM, this effect is studied systematically in this paper.