{'fraction_non_alphanumeric': 0.03007518796992481, 'fraction_numerical': 0.03759398496240601, 'mean_word_length': 3.935185185185185, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
A Full Ka-band Highly Linear Efficient GaN-on-Si Resistive Mixer

In this paper, we present a highly linear balanced IQ resistive mixer implemented in a 100-nm GaN HEMT on a silicon substrate that covers the whole Ka-band. The mixer achieves an input third-order intercept point (IIP3) of 30 dBm with only 10.5 dBm of LO input power at 35 GHz which means a record linear efficiency of 20 dB. The Measured 1-dB input compression point was 15 dBm at 34 GHz. The mixer shows a better than 10 dB conversion loss over the entire Ka-band.