{'fraction_non_alphanumeric': 0.012077294685990338, 'fraction_numerical': 0.0, 'mean_word_length': 5.102941176470588, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Optical absorption of gallium-doped silicon

The spectral dependence of the infrared absorption of Ga centers in silicon has been measured. Dependence on doping and impurity concentration and temperature is found for the optical cross section. The splitoff valence band has to be taken into account to explain the spectral dependence. Excited bound states cause a temperature decrease of the optical cross section.