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Lasing characteristics of vertical-cavity surface-emitting lasers based on GaAs and InGaAs quantum wells

In this paper the authors reported on the results of an investigation of the lasing characteristics of vertical-cavity surface-emitting lasers (VCSEL's) based on GaAs and InGaAs quantum wells (QW's). The investigations of the laser mode structure have been carried out for VCSELs with apertures in the range from 1 /spl mu/m up to 14 /spl mu/m. The main lasing parameters such as the mode frequencies, the mode threshold gain as well as the parameters of the modal stability have been calculated using 3D rigorous eigenmode expansion model.