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Preparation of n-ZnO/p-Si Heterojunction by Sol-Gel Process

N-type ZnO thin films with a crack and columnar-free structure were successfully prepared on p-type Si substrates by the sol-gel process. The current-voltage (I-V) characteristics of the heterojunction of n-ZnO/p-Si show a rectification with strong electrical breakdown strength of higher than 107 V/cm. The capacitance-voltage (C-V) characteristics show an approximate linear C-2-V relationship in the reverse bias condition. These results indicate that the ZnO films prepared by the sol-gel process are good enough to be used as a semiconducting material in electrical devices.