{'fraction_non_alphanumeric': 0.03125, 'fraction_numerical': 0.025, 'mean_word_length': 4.762589928057554, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Elaboration and Characterization of Sprayed Tb-Doped ZnO Thin Films

ZnO and Tb-doped ZnO (TZO) thin films were deposited on glass substrate at 350 °C by spray pyrolysis technique. Structural, optical and electrical properties of the films were investigated as a function of dopant concentration, which was varied between 0 and 5 at % of terbium. TZO films were polycrystalline and exhibit hexagonal quartzite crystal structure with a preferential orientation along [002] direction. The AFM measurements show that the roughness of the films increased with Tb doping. All the TZO films exhibit a transmittance between 70 and 80 % in the visible range. The TZO films were n-type degenerate semiconductor with a lowest electrical resistivity of about 6.0×10 Ω.cm. Copyright © 2014 IFSA Publishing, S. L.