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On-chip integration of planar dipole antenna with AlGaAs/GaAs Schottky diode for RF power detection

Recently, the concept of intelligent quantum (IQ) chip introduced by Hasegawa et al. [1] using III–V material as a base material where nanometer scale quantum processors and memories are integrated on chip with capabilities of wireless power supply, wireless communication circuit and various sensing functions, has been demonstrated. Schottky diode is a fast rectifying device [2] and can be used as RF power detector to detect damaging signal as well as rectenna device to supply DC power to the other on-chip devices. The design and fabrication of ultra-low power n-AlGaAs/GaAs high electron mobility transistor (HEMT) Schottky diode for on-chip RF power detector and rectenna are not extensively investigated.