{'fraction_non_alphanumeric': 0.019088016967126194, 'fraction_numerical': 0.008483563096500531, 'mean_word_length': 4.827160493827161, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
CO2 Laser Annealing on Fluorinated Silicon Oxide Films

CO2 laser annealing of fluorinated silicon oxide films grown by liquid-phase deposition (LPD) is proposed to improve the properties of the as-deposited films. It is found that the fluorinated silicon oxide films after laser annealing become much denser and that the effective surface charge density (QSS/q) is reduced significantly. However, the properties of the fluorinated silicon oxide films after laser annealing depended on the power density of the laser beam. It is also found that the effect of laser annealing is most prominent when the power density of the laser beam is controlled at 12 KW/cm2. Based on the experimental results, it may be expected that the structure of a fluorinated LPD-SiO2 film following CO2 laser annealing is similar to those of the thermally grown layers. Thus, CO2 laser annealing is the best candidate for improving the properties of LPD oxide films.