{'fraction_non_alphanumeric': 0.019696969696969695, 'fraction_numerical': 0.0030303030303030303, 'mean_word_length': 5.957894736842105, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Properties of the film electroluminescence of ZnS:TbF3

The electroluminescence is reported from ZnS doped with terbium (Tb) thin films prepared by radio frequency magnetron sputtering method. We have systematically investigated the characteristics of the ZnS:TbF3 thin film electroluminescence devices, such as film characteristics of the ZnS/Tb active layer, substrate temperatures during magnetron sputtering and Tb concentration of the active layer, etc. From the results obtained, the mechanism of electroluminescence of thin film EL devices is discussed, and then the relationships between the EL characteristics and the device parameters are considered.