{'fraction_non_alphanumeric': 0.036988110964332896, 'fraction_numerical': 0.021136063408190225, 'mean_word_length': 4.492753623188406, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Preliminary soft x‐ray studies of β‐SiC

We have looked at β‐SiC with soft x‐ray emission and photoemission spectroscopy. From the Si L23 and C K emissions, the Si s+d‐like and C p partial density of states in the bulk valence band are identified and compared with valence band photoemission. In addition to bulk electronic structural features, photoemission from a (3×2) Si‐rich surface shows two surface‐derived valence features at ∼−2.6 and ∼−1.6 eV relative to the Fermi level. The intensities of these valence features vary as those of surface Si 2p core level components shifted by −0.5 and −1.4 eV from the bulklike SiC Si 2p core level. We have also used the Si L23 absorption edge as a probe of the unfilled states near the conduction band minimum.