{'fraction_non_alphanumeric': 0.02114029468289558, 'fraction_numerical': 0.0, 'mean_word_length': 5.761904761904762, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Challenges and opportunities of emerging nanotechnology for VLSI nanoelectronics

This presentation will first summarize some of the most recent silicon innovations made for advanced CMOS transistors in the nanotechnology era for high-speed and energy-efficient VLSI digital applications. Through these Si nanotechnologies, it is expected that the CMOS scaling and improved performance trends will extend and continue well into the next decade. In addition, there has been good progress made and much interest generated in the research of non-silicon materials and their integration onto large silicon wafers to enhance integrated circuits performance, provide more functions and reduce power dissipation. For instance, III-V compound semiconductors and their integration onto silicon are currently in research for future high-speed and ultra-low-power digital CMOS applications. Emerging nano-materials and nanotechnologies such as nanotubes, nanowires and nanoribbons, as well as new areas such as non-charge based devices and spintronics, are being explored for future computation and data storage applications. Furthermore, some of these nano- devices are finding potential applications in other important areas such as health and the environment, energy conversion and storage, consumer electronics, communication devices, sensors and so on. The research progress of these emerging nanotechnologies and nanoelectronic devices, and the challenges and opportunities of combining top-down and bottom-up nanoelectronics, will be discussed in this presentation.