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Fabrication of High-Quality Perovskite Oxide Films by Lateral Epitaxy Verified with RHEED Oscillation

Epitaxial growth of SrTiO3-x and SrVO3-y films by laser molecular beam epitaxy (laser MBE) has been controlled on an atomic scale. Reflection-high-energy-electron-diffraction (RHEED) intensity oscillation persisting for more than 50 periods was observed during the homoepitaxial growth of SrTiO3-x film, indicating the lateral epitaxy in a unit cell layer-by-layer mode. The conductivity of SrTiO3-x ultrathin films was sensitive to the oxygen pressure at the deposition to a far greater extent than was that of SrVO3-y films.