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A novel low-voltage trench power MOSFET with improved avalanche capability

In this paper, a novel trench power MOSFET with improved avalanche capability and specific on-resistance is presented. The novel device is fabricated along with the conventional trench power MOSFET for comparison. The avalanche current of the novel device is improved by 30% because the n+-source/p-body junction in the structure is minimized. Moreover, the specific on-resistance is reduced by 32% due to the smaller pitch of the novel device. The measured breakdown voltage of the devices is approximately 54 V.