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Crystallinity and Photoluminescence Evaluation of Er-Implanted n-Type 4H-SiC Subjected to an Annealing Process

Er ions were implanted into n-type 4H-silicon carbide (SiC) materials, which are useful host materials because they provide a wide band gap and improve the luminescence properties of Er 3+ ions. PL measurements and electron spin resonance (ESR) were characterized. The samples were annealed at temperatures ranging from 1400°C to 1700°C for 30 minutes by rapid thermal annealing. According to the results of ESR and Raman spectroscopy, the optimum crystallinity annealing temperature was 1500°C for 30 minutes. The optimum annealing temperature for obtaining strong PL intensity was 1500°C for 30 minutes. Consequently, the optimum annealing temperature for the recovery of crystallinity corresponds to that of strong PL luminescence intensity. Moreover, the dissociation of Si from the host material caused a decrease of the Raman intensity above 1600°C and then led to damage of the host material. The recovery of crystallinity due to annealing temperature also influenced the electrical properties (I-V characteristics of Ni/4HSiC). We report systematically the experimental results of PL, ESR, Raman, and I-V characteristic measurements.