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Effect of Photo-Assisted RIE Damage on GaN

Reactive Ion Etching (RIE) and Photo-Assisted RIE (PA-RIE) induced damage in GaN using simple Schottky structures and a BCl 3 /Cl 2 /N 2 gas mixture have been investigated. Schottky diode I-V characteristics following different RF powers and exposure times show significant changes caused by damage. This damage results in a reduction of the reverse breakdown voltage V B in n-type GaN and an increase in V B for p-type GaN. Our preliminary data on the PA-RIE process points to much reduced damage levels compared to conventional RIE. This result may be due to a change in surface chemistry or to a photo-enhanced diffusion of defects into the GaN layer, leaving a cleaner near-surface region.