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Effect analysis and magnetoelectric properties of hydrogen in Co-doped MoSe2 Co-growth

In this paper, Co3O4、MoO3 and Se powders were used as precursors in in-situ co-growth chemical vapor deposition method. Cobalt-doped MoSe2 nanosheets were grown on SiO2 substrate at 710 ℃. The influence of hydrogen content on its growth and regulation mechanism was discussed. Surface morphology analysis showed that the introduction of hydrogen promoted the formation of oxy-selenium metal compounds required for nucleation and the CoMoSe compound molecules required for lateral growth. AFM(atomic force microscope) results show that hydrogen is beneficial to the growth of single-layer two-dimensional cobalt-doped MoSe2. With the increase of the amount of Co3O4 precursor, the Raman and PL(photoluminescence) spectra of the sample showed red shift and blue shift, respectively, and the bandgap was modulated from 1.52 eV to 1.57 eV. The XPS(X-ray photoelectron spectroscopy) results analysis showed that the elemental composition ratio of Co was 4.4%. The magneto and electric properties of the samples were analyzed by SQUID-VSM(superconducting quantum interference device) and semiconductor parameter analyzer for electrical testing. The results show that MoSe2 changes from diamagnetic to soft magnetic after Co incorporation; the threshold voltage of back gate FETs is shifted by 5 V from pure MoSe2, and the off-state current is lower. This research provides a basis for the research and application development of ultra-thin two-dimensional materials.