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Localization and Hopping of Excitons in Quaternary AlInGaN

Evolution of photoluminescence spectra in quaternary AlInGaN alloys is studied as a function of indium content. An emergence of an S-shaped temperature dependence of the luminescence peak position and a W-shaped temperature dependence of the line width was observed with a gradual increase of the In molar fraction. This infers that the incorporation of indium into AlGaN results in formation of a network of states that facilitate exciton localization and hopping typical of ternary InGaN.