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Numerical Analysis of Barrier Layer Effect on Copper Electromigration

A modified model for electromigration transport considering the barrier layer effect is developed, based on the one-dimensional continuum model. Electromigration lifetime under the direct current (DC) and pulsed DC stress is analyzed numerically. The simulation results demonstrate that the barrier layer used to stop the copper diffusion also improves the interconnect lifetime. The improvement of lifetime under DC stress is higher than that under the pulsed DC stress