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Plasma Etching Induced Gate Oxide Leakage

The paper discusses mechanisms of process-induced damage observed in plasma etched CMOS devices. The low-level oxide leakage and degraded breakdown properties are investigated and experimentally simulated with thin oxide MOS structures. It is shown, that both low-level oxide leakage and degraded QBD, with their strong antenna dependence to plasma charging, are a result of temperature accelerated low-current Fowler-Nordheim injection of positive polarity, which takes place during plasma oxide etching.