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Transport Properties of Amorphous Silicon Films on Quartz Substrate

Electrical conductivity and thermoelectric power of vacuum evaporated a-Si films deposited onto quartz substrate were measured in-situ at a system pressure ∼10-6 Torr. Data were analysed with the well known Mott's relations and it was observed that conduction is governed by variable range hopping in the lower temperature region and by carriers excited into the localised states at the band edges at high temperatures.