{'fraction_non_alphanumeric': 0.022999080036798528, 'fraction_numerical': 0.013799448022079117, 'mean_word_length': 5.146892655367232, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Effects of thermal annealing and ageing on porous silicon photoluminescence

Effects of vacuum and ambient thermal annealing and ageing on the photoluminescence (PL) spectra of porous silicon (po-Si) have been investigated. Isochronal anneals up to 300°C were done and PL spectra were recorded and compared to the un-annealed specimens. Minimal changes are induced for anneals below approximately 125°C; however, significant reduction in PL intensity occurs following anneals at T ≥ 200°C. Deconvolution of the PL spectra into five distinct Gaussian bands reveals that at least two of the bands are attributable to non-quantum confinement mechanisms. Specifically, bands appearing at 1.58 and 1.78 eV are ascribed to non-bridging oxygen hole related defects. Recovery of PL intensity following thermal annealing occurs over a period of several days at a rate that is dependent upon annealing temperature and environment. Passivation of Si dangling bonds on the po-Si surface via effusion of hydrogen and incorporation of oxygen is responsible for the observed variations in PL intensity.