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A process-oriented model for the simulation of base pushout in integrated bipolar devices

A closed-form solution to Poisson's equation applied to the base-collector region of an integrated bipolar device is developed. The solution comprises an extension to simplified analyses published elsewhere, and it leads to a process-oriented definition of base pushout phenomena, Moreover, the analytical results evolve into practical suggestions for effecting a high-injection simulation of gain and gain-bandwidth product characteristics.