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Short wavelength infrared InPSb/InAs superlattice photodiode grown by metalorganic chemical vapor deposition

We report the growth and characterization of InPSb/InAs superlattice (SL) materials and devices in the short-infrared wavelength range by metalorganic chemical vapor deposition (MOCVD). Good structural quality was achieved with a lattice mismatch of less than 0.09% and smooth surfaces with a roughness of only 0.304 nm. A pin homojunction photodetector with 10 monolayer (ML) InPSb/2 monolayer (ML) InAs SLs on InAs substrate was grown and fabricated. At 77 K, the device demonstrated a 100% cut-off wavelength of ∼2.6 μm, a dark current density of 8.7 × 10−10 A cm−2 at −0.1 V bias voltage, and a specific detectivity of 1.3 × 1013 cm·Hz1/2/W at 2.0 μm.