{'fraction_non_alphanumeric': 0.022452504317789293, 'fraction_numerical': 0.0051813471502590676, 'mean_word_length': 5.105263157894737, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Large-signal modeling of on-wafer microwave transistors based on response surface methodology

In this paper we extract the large-signal model of a microwave transistor by using the response surface methodology. This behavioral modeling approach combines design of experiments and automated model extraction. As case study we considered an on-wafer 0.15 μm GaAs pHEMT. The proposed model is compared with well-established Chalmers model. We show that a high level of accuracy can be achieved with response surface methodology. However, the methodology is computationally complex.