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Design of highly-efficient GaN X-band-power-amplifier MMICs

This paper describes the design and realization of efficient GaN/AlGaN MMICs for X-band frequencies (8–12 GHz) in microstrip- transmission-line-technology on 3-inch s.i.SiC substrates. Four dual-stage MMICs are designed and realized based on different bandwidth requirements between 1GHz and 3 GHz with output power levels of 15–20W at X-band. After optimization of field-plate architectures and driver stage size, a maximum PAE of ≥40% is achieved between 8.5-10 GHz with a maximum output power of 19–23W, and an associated power gain of 17 dB. A broadband device with 3 GHz bandwidth reaches ≥35% of PAE between 8 and 11 GHz. A 1mm test chip of the same technology supports a VSWR-ratio test of at least 4:1 at P−1 dB power compression and 10 GHz.