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Growth and characterization of GaAs/GaPAs metamorphic, epitaxial nanostructures

We discuss metamorphic, epitaxial nanostructures, using the III-V system GaAs/GaPAs as a particular example. The materials were synthesized by low-pressure metalorganic chemical vapor deposition, incorporating strain-engineered compositional grades. Vertically aligned, quantum-dot-array like structures were observed by cross-sectional transmission electron microscopy of short-period superlattice regions. Z-contrast images and geometric phase analysis of lattice images both confirm the presence of coherent GaAs dots within GaPAs barriers.