{'fraction_non_alphanumeric': 0.039806996381182146, 'fraction_numerical': 0.013268998793727383, 'mean_word_length': 4.570469798657718, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Ballistic Electron Emission Microscopy Study of p-Type 4H-SiC

Ballistic electron emission microscopy (BEEM) measurements have been performed on Pt/p-type 4H-SiC Schottky contacts to probe the metal/semiconductor (M/S) interface and the valence band structure of the semiconductor. The Schottky barrier height (SBH) is found to be 1.45 eV, compared with 1.55 eV for Pt on n-type 4H-SiC measured under identical conditions with BEEM. A second threshold is also observed in the BEEM spectrum on Pt/p-type 4H-SiC contacts, which is possibly related to a lower-energy valence band. The sum of the measured p-type and ntype SBH’s is slightly less than the 4H-SiC bandgap, which suggests the existence of an interfacial oxide layer and rather weak Fermi level pinning, consistent with prior measurements of SBH vs. metal work function.