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Ge/Si(100) quantum dots grown via a thin Sb layer

We report on a way to grow very small Ge islands (basis about 15 nm, height about 1 nm, density 2 × 1011 cm–2) on a Si substrate by molecular beam epitaxy. By the deposition of lowest amounts of antimony prior to the Ge deposition we could influence the formation kinetics of Ge islands. After the covering of the islands by a Si layer the samples show pronounced photoluminescence at room temperature in the range of 1.5 μm. The results of the optical spectroscopy experiments are interpreted in this way that these Ge nanoislands show a quantum confinement, and therefore, they can be regarded as quantum dots.