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InAs/GaAs quantum-dot light emitters monolithically grown on Si substrate

We report on high quality GaAs-on-Si layers with low threading dislocations obtained by a combination of nucleation layer and dislocation filter layers using the molecular beam epitaxy (MBE) growth method. As a result, we achieved a Si-based electrically pumped 1.3 μm InAs/GaAs quantum dot (QD) laser that lases up to 111°C with a lasing threshold of 200 A/cm2, and a single facet output power exceeding 100 mW at room temperature. In addition to Si-based lasers, we also demonstrated the first Si-based InAs/GaAs QD superluminescent light-emitting diode (SLD), from which a close-to-Gaussian emission with a full width at half maximum (FWHM) of ~114 nm centered at ~1258 nm and maximum output power of 2.6 mW has been achieved.