{'fraction_non_alphanumeric': 0.03178484107579462, 'fraction_numerical': 0.013447432762836185, 'mean_word_length': 5.111940298507463, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Light emission rate enhancement from InP MQW by plasmon nano-antenna arrays.

Arrays of gold single-strip and double-strip nano-antennas, with resonance in the wavelength range of 1200-1600 nm, were fabricated on the top of InGaAs/InP multi quantum well structure. Photo-luminescence from the quantum-wells was measured and shown to be enhanced by a factor of up to 9, with maximum enhancement wavelength corresponding to the nano-antennas resonance. Emission enhancement is attributed to the coupling of emitting charge-carriers to the plasmonic nano-antennas, causing an estimated increase in the radiative recombination rate by a factor of ~25, thus making it dominant over non-radiative recombination. This effect will enable fast modulation of InP-based nano-emitters spontaneously emitting at telecom-wavelength.