{'fraction_non_alphanumeric': 0.01756311745334797, 'fraction_numerical': 0.0043907793633369925, 'mean_word_length': 5.204081632653061, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Switching characteristics of high-breakdown voltage AlGaN/GaN HEMTs

In this report we present the switching measurements on large area AlGaN/GaN HEMT devices with high breakdown voltage achieved with the help of multiple field plates. AlGaN/GaN high electron mobility transistors have shown potential advantages over Si and SiC based transistors for high power switching. The very high electron mobility in the AlGaN/GaN HEMT system combined with the high density of polarization induced 2D electron concentration yield a very low on-resistance and high switching frequency. Also the high band gap energy of AlGaN/GaN system results in a high critical electric field. Hence it is possible to have high voltage power switches capable of operating at high frequencies (~100MHz). However there are some difficulties, which have prevented the achievement of very high breakdown voltages at high frequency operation