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Influence of HCl etching on the electronic properties of LAO-defined nanostructures

We present an investigation of the influence of etching in hydrochloric acid on the topography and electronic properties of nanostructures defined by local anodic oxidation on shallow two-dimensional electron gases. The acid concentration and etching time necessary to remove the oxide lines were determined, yielding a process to create a flat surface suitable for scanning probe experiments. Changes in the low-temperature electronic properties induced by surface oxide removal include a moderate decrease of the total electron density and an increase of the breakdown voltages of the lines defined by local anodic oxidation. The obtained data indicate that the electronic width of the nanostructures decreases after the etching process.