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Inkjet-Printed Oxide Thin-Film Transistors Based on Nanopore-Free Aqueous-Processed Dielectric for Active-Matrix Quantum-Dot Light-Emitting Diodes Displays.

Inkjet-printed thin-film transistor (TFT) backplane for active-matrix light-emitting diode display is drawing much attention for the advantages of low material waste and simple fabrication processes without vacuum deposition and photolithography steps. Herein, for the first time, solution-processed quantum-dots light-emitting diode (QLED) array displays driven with inkjet-printed oxide TFT backplane were realized and demonstrated using a general "solvent printing" method. To suppress nanopore formation in the thick oxide films, carbon-free aqueous inks were employed for gate dielectrics. No nanopores was found in the whole 120 nm-thick gate dielectrics. However, compared to the organic inks, the aqueous inks have very low viscosity, resulting in uncontrollable ink spreading especially in trans-line printing. The ink easily shrinks on the low-surface-energy area and spreads on the high-surface-energy area, leading to serious uniformity problems (the upper lines even break at the top of underlying lines). To solve the problem, a "solvent printing" method was employed to form coffee-line surface-energy patterns, which were uniform without shape distortion. The surface-energy patterns can restrain the ink spreading and tune the morphology of the printed films. As a result, multilayer TFT arrays with ideal shapes were achieved. The mobilities of the printed top-gate TFTs in the backplane array were 3.13 ± 0.87 cm2 V-1 s-1 for switching TFTs and 2.22 ± 0.38 cm2 V-1 s-1 for driving TFTs. Finally, an active-matrix red QLED character display based on the printed oxide TFT backplane and solution-processed QLEDs was demonstrated. The "solvent printing" method opens a general route for inkjet-printed multilayer electronic devices.