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New Ordering of the InAs Growth through High-Temperature Treatment of the GaAs (100) Substrates

We report the effects of the exposure of homoepitaxially grown GaAs buffer layers to high temperature with no As overpressure on the InAs growth front. It was observed that after using this thermal treatment the InAs bidimensional growth was preserved until a thickness of 3.0 monolayers was reached. Once the quantum dot formation took place, the atomic force microscopy images revealed a considerable improvement in the island size distribution as well as a reduction of the density compared with the InAs quantum dots grown conventionally. Moreover, a redshift of the photoluminescence spectra was observed for the samples subjected to the novel thermal treatment.