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Dark current modelling of midwave infrared HgCdTe gated photodiodes

HgCdTe midwave-infrared gated photodiodes were studied both experimentally and theoretically to determine the dark current mechanisms present under different surface conditions. By modifying HgCdTe photodiode equations to account for surface band-bending we are able obtain a first-order approximation to the behaviour of these gated photodiodes. A good fit to the data has been obtained for band-to-band tunnelling and surface generation-recombination current, but not for trap-assisted-tunnelling (TAT) current. This is attributed to the exclusion of interface states in the model, the complicated TAT behaviour, as well as two-dimensional effects.