{'fraction_non_alphanumeric': 0.03565891472868217, 'fraction_numerical': 0.0031007751937984496, 'mean_word_length': 5.525252525252525, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Self-healing LDMOSFET for high-voltage application on high-k/metal gate CMOS process

A self-healing laterally diffused MOSFET (LDMOSFET) was developed in this work. With this technology, hot-carrier instability (HCI) degradation can be efficiently suppressed without the drawback of increasing leakage. Substrate current and time dependence of the HCI degradation (N-factor) were investigated to understand the healing mechanism further. With healing gate bias, HCI stress injected hot carriers can be recovered and consequently the current degradation suppressed. Finally, ~30% reduction of HCI degradation can be achieved with the technology.