{'fraction_non_alphanumeric': 0.012797074954296161, 'fraction_numerical': 0.016453382084095063, 'mean_word_length': 5.602409638554217, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Effect of etching conditions on the formation of a regular porous structure of A3B5 semiconductors

In this paper, the basic factors affecting the formation of porous structure of A3B5 semiconductors were ascertained. These factors are important from the standpoint of controlling the parameters of porous structures. The morphology of porous structures was studied using scanning electron microscope JSM-6490. The chemical composition was studied using the method of EDAX, diffractometric studies were carried out using the diffractometer DRON-3M