{'fraction_non_alphanumeric': 0.02518891687657431, 'fraction_numerical': 0.003778337531486146, 'mean_word_length': 4.760869565217392, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Channel soft breakdown enhanced excess low-frequency noise in ultra-thin gate oxide PD analog SOI devices [MOSFETs]

The impact of soft breakdown (SBD) location on drain current noise in partially depleted SOI MOSFETs with ultra-thin oxide (1.6 nm) is investigated. In a channel breakdown device, a noise overshoot phenomenon is observed in the ohmic regime. The peak amplitude can be about one order of magnitude higher than the background 1/f noise. In addition, it is shown that the corresponding spectrum has a Lorentzian shape. The origin of this excess noise is believed to be related to SBD enhanced electron valance-band tunneling induced floating body effect. The findings indicate that channel SBD enhanced drain current noise can be a reliability issue in PD analog SOI CMOS circuit.