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A comparison of carbon and zinc doping in GaAs/AlGaAs lasers bandgap-tuned by impurity-free vacancy disordering

Bandgap tuning by impurity-free vacancy disordering was investigated on carbon and zinc p-doped laser structures. Zinc diffused during annealing and consequently only carbon-doped material lased. After annealing, threshold current densities rose from 225 to 255 A cm-2 due to an increase in the transparency current; the gain constant of the quantum wells remained constant.