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Embedded Microchannel Cooler for Hetero-Integration of High Power GaN MMIC on Silicon

A silicon interposer with embedded microchannel cooler for high power GaN monolithic microwave integrated circuit (MMIC) integration is put forward and validated in this work. A GaN MMIC power amplifier (PA) was mounted on the silicon interposer and micro-assembled in a brass test cube for cooling performance evaluation. The thermal and hydraulic properties of deionized (DI) water for cooling, the electrical characteristics and temperature distribution of the chip were recorded in real-time by a cooling test platform. The hotspot power density of the active regions was up to 400.2 W/mm2, and the overall heat flux of the chip was 471.9 W/cm2 in the practical implementation. The validation results demonstrated that the silicon interposer provided a sufficient cooling capacity to maintain the maximum junction temperature of the chip within 160 °C at 70 °C ambient temperature and the fluid pressure drop < 210 kPa at the flow rate of 210 ~ 220 mL/min. It was ensured that the operation of high power GaN MMIC was highly efficient and safe. It is a viable thermal management for the 3rd generation semiconductor high power device integrated on silicon.