{'fraction_non_alphanumeric': 0.018387553041018388, 'fraction_numerical': 0.0014144271570014145, 'mean_word_length': 5.321428571428571, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Wafer level packaging for ultra thin (6 μm) high brightness LEDs using embedding technology

Due to various advantages, as high efficiency, compactness and color variability, high brightness LEDs become more and more important for several lighting applications. In this paper, we discuss a completely new packaging approach of ultra thin high brightness LEDs which is applicable on wafer level. Due to the wire bond free manufacturing process as well as the lack of silicone encapsulants and adhesives it promises better reliability. The process flow is described in detail. The feasibility is fully demonstrated and confirmed by cross sections. First electro-optical characterization results are presented.