{'fraction_non_alphanumeric': 0.0345821325648415, 'fraction_numerical': 0.0, 'mean_word_length': 5.205357142857143, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Study of Dopant Activation in Arsenic-Implanted Laser Annealed Si By Differential Hall Effect Metrology (DHEM)

Ultra-violet (UV) laser annealing (LA) is a promising technology that is being investigated for next-generation CMOS processing. UV-LA’s unique capability of activating dopants very near to the surface due to the very shallow penetration depth can be critical for achieving very low-contact resistivity materials and structures. Here we present a detailed analysis of the effects of UV-LA on very highly As-doped material. Physical and chemical data-sets (SIMS, XTEM and FFTM) are compared with the electrical depth profiles obtained using Differential Hall Effect Metrology (DHEM).