{'fraction_non_alphanumeric': 0.024518388791593695, 'fraction_numerical': 0.0, 'mean_word_length': 5.5, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Temperature-Scaling Theory for Low-Temperature-Operated MOSFET with Deep-Submicron Channel

A novel principle is suggested for the optimum design of deep-submicron channel MOSFET operated at liquid-nitrogen temperature. Current-voltage characteristics of MOSFET are scaled down in proportion to operation temperature, while the distribution of the mobile carrier is kept constant. The results of a two-dimensional simulation confirm our scaling theory. A combination scaling law is also suggested which comprises the temperature-scaling law and a dimensional scaling law.