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Epitaxial Integrated E-dE Silicon Detector with a Buried Low-Resistive Diffused Layer

The epitaxial crystal growth technique combined with the impurity diffusion technique is applied on fabrication of integrated E-dE silicon detectors. Experimental results show that detector produced seems to have enough characteristics for use in practical experiments. This detector is compact and easy to handle, and eliminates the highly technical process of etching the substrate, which is necessary for producing the conventional epitaxial silicon dE detector.