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Dielectric and Structural Properties of PST Films Deposited by RF Ion Sputtering on LSCO/Si Substrates

Pb0.5Sr0.5TiO3 (PST) films have been obtained by RF ion sputtering on (La0.5Sr0.5)CoO3 substrates (LSCO). The purpose of this work is to investigate the relation between the crystalline structure and the dielectric properties of PST films grown on LSCO electrodes. PST films were deposited at 400°C in a fixed argon/oxygen (50/50) atmosphere. After deposition, PST films were post-annealed at different temperatures. Scanning Electron Microscopy (SEM) and X-Ray Diffraction were used for the structural studies. Crystallinity and surface morphology revealed a strong dependence on the crystallization conditions. The dielectric properties of the Pt/PST/LSCO/Si films were characterized through Capacitance (C) vs. Voltage (V) curves, Polarization (P) vs. Electric Field (E) curves and Current (I) vs Voltage (V) measurements. Leakage currents were also evaluated at each postannealing temperature.