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Two-transistor active pixel image sensor with active diode reset

A two-transistor active pixel image sensor (2T-APS) architecture is proposed. Instead of a reset transistor, a diode within the pinned photodiode sensor is used to reset the charge-sensing node in each pixel without any extra area. The new architecture can be used to increase the fill factor and/or reduce the pixel pitch. A test structure of the 2T-APS has been demonstrated using 0.35 µm CMOS technology featuring a 7µm × 7µm pixel size with a fill factor of 38%. The pixel characteristics are presented and discussed.