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The effect of BaTiO3 content on the microstructure and electrical properties of Bi2O3/ZnO varistor materials

The study deals with the 0 and 1 mol.% BaTiO3 doped ZnO. Bi2O3/ZnO based varistor containing 0.5 mol% of Bi2O3 and 99.5 mol% of ZnO, has been manufactured by conventional ceramic procedure. Mixing has been sintered at temperatures in the range 1000 °C. Different, characterization techniques such as X-ray diffraction (XRD), scanning electron microscopy (SEM) equipped with energy dispersive X-ray (EDX) have been used. Microstructure and electrical characteristic have been analyzed as a function of the BaTiO3 content and sintering temperature. Various oxides and, solid solutions such as Zncite, BaTiO3, Bi2O3 and Bi2O3 have been formed. Grain size and dielectric constant (') decrease when BaTiO3 content increases whereas, non-linearity coefficient (á), electric fields (Eb) and the dielectric loss (Tanδ) increased, to reach respectively 12.09 and 44.35 V/mm in comparison with that of BaTiO3/Bi2O3/ZnO based varistor.