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Compact Hot-Electron Induced Oxide Trapping Charge and Post-Stress Drain Current Modeling for Buried-Channel p-Type Metal–Oxide–Semiconductor Field-Effect-Transistors

In this paper, we present a complete and physics-based drain current model for hot-carrier damaged buried-channel (BC) p-type metal–oxide–semiconductor field-effect-transistors (pMOSFETs) operated in the forward and reverse-biased modes. Experimentally it was found that the post-stress drain current of BC pMOSFETs increases, this is caused by hot-carrier-induced electron trapping in the oxide. Considering the subthreshold operation, we present an complete electron gate current model and calculate the spatial distribution of oxide-trapping-charges by using an oxide trapping mechanism, and then we can model the hot-carrier damaged drain current by substituting the spatial distribution of oxide-trapping-charges into the damaged BC MOSFET drain current model. The damaged channel region due to the fixed oxide charges trapped during hot-carrier injection is treated as a bias and stress-time-dependent resistance. The degraded BC MOSFET drain current model is applicable for circuit simulation and its accuracy has been verified by experimental data.