{'fraction_non_alphanumeric': 0.026362038664323375, 'fraction_numerical': 0.007029876977152899, 'mean_word_length': 4.9375, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Shunt characterization technique of decoupling transmission line for millimeter-wave CMOS amplifier design

A shunt characterization method is proposed to characterize a very low impedance transmission line (TL), which is used for decoupling of DC and RF in millimeter-wave CMOS circuits. Since metal-insulator-metal (MIM) capacitors are used to achieve very low impedance the TL named as MIM TL. Two structures are used for this method. S-parameters of MIM TL are calculated using reflections. The results match better than direct measurement method from 1 to 110 GHz.