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High performance design for InP-based strained-layer quantum well laser diodes

InP-based laser diodes (LDs) play an important role in opto-electronic integrated circuits and optical telecommunication systems. To achieve high performance characteristics, strained-layer multi-quantum well (SL-MQW) structures are commonly used. The authors believe that SL-MQW LDs are one of the useful devices among the low-dimensional devices proposed so far for actual applications. Design guidelines for these high performance devices with regard to low threshold, high-speed modulation, and high-temperature operation, are described based upon an understanding of the underlying physics.