{'fraction_non_alphanumeric': 0.0425531914893617, 'fraction_numerical': 0.05015197568389058, 'mean_word_length': 4.936936936936937, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Electron Tunneling Through an Al2O3 Thin Film on NiAl(110) in Scanning Tunneling Microscopy

We calculate electron tunneling for an Al2O3/NiAl(110) structure in scanning tunneling microscopy (STM) by employing a simple and exactly solvable one-dimensional model. The calculation reproduces the essential features of the apparent height of an Al2O3 thin film vs. sample bias curve for an Al2O3(0.5 nm)/NiAl(110) structure studied by Hansen et al. [Surf. Sci. 475 (2001) 96] for the appropriate electron affinity of the Al2O3 film, about 1.35 eV. Origins of fine structures found in the calculated transmission probability vs. sample bias curves are discussed.