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The investigation of the annealing effect on hydrogenated amorphous silicon pin diodes by capacitance techniques

In this study the reverse-bias annealing effect on the density of states(DOS) in hydrogenated amorphous silicon pin diodes was investigated. In order to find the effect of reverse-bias thermal annealing on the DOS around the midgap of the i-region in a pin structure of /a-SiC:H(-type)/a-Si:H(intrinsic)/a-Si:H(-type)/Al, the junction capacitance was measured for annealing temperatures of 23-C and the DOS around the midgap of the i-region was determined by three different capacitance techniques. The results are tabulated.