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Influence of Phosphorus Evaporation from Melt on InGaP/GaAs LPE Growth

The evaporation of phosphorus from the melt during LPE growth process causes poor reproducibility of melt composition and crystal growth. In this letter, we show the effect of applying additional phosphorus vapor pressure onto the melt surface on the epitaxial layer morphology and photoluminescence spectrum. It is clear that applying 1-Torr phosphorus vapor pressure on the melt surface is very effective in maintaining a constant melt composition during the growth process. LPE layers with good crystalline qualities have been grown reproducibly on both (111)B and (100) GaAs substrates.