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Advanced techniques for enhanced Ion Beam Etch uniformity

Ion Beam Etch (IBE) is an existing technology used for many years in hard drive recording head applications where accurate, nanometer etched scale is required. IBE has been adopted in selected areas of Semi-Conductor processing such as STT-MRAM memory devices and IR Sensors. The accuracy and low damage of the IBE process are ideal for sensitive structures such as magnetic sensors. Plasm-Therm Planetary IBE system introduces a sweeping wafer stage feature producing an order of magnitude improvement in uniformity, excellent center-to-edge feature symmetry and shaping the radial etch profile. The design architecture not only improves etch uniformity and symmetry for 200mm applications but enables scaling to larger wafer diameters while maintaining performance.