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Pressure dependence of the electronic structure of 4f and 3d electron systems studied by X-ray emission spectroscopy

ABSTRACT Techniques based on X-ray emission spectroscopy (XES) have been utilized to investigate pressure-induced changes in the electronic structure in samples subject to high pressure in the diamond anvil cell. High-resolution X-ray absorption spectra can be obtained with partial fluorescence yield mode (PFY-XAS) measurement. As typical examples, we show results of measurements of the valence fluctuating systems of CeCuGe, Ce115 systems, and YbNiGe. The pre-edge feature of the XAS spectra at K-absorption edge of 3d-elements correlates to the spin states. We also show the results of the Fe XES and PFY-XAS of KFeSe, which has two pressure-induced superconducting (SC) domes.