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Gas-Source Migration-Enhanced Epitaxial Growth of GaP, AlP and AlAs

Gas-source migration-enhanced epitaxial growth of GaP, AlP and AlAs was studied. The growth rates of layers depend on the flux of the group III source. Reflection high energy electron diffraction (RHEED) exhibited phosphorus-stabilized reconstruction on the GaP surface as a (2×4) pattern, while it showed a (1×1) streaky pattern on the AlP and AlAs surfaces, although RHEED oscillations were observed. The results of X-ray diffraction rocking curves showed that the flatness of the layers was good. The refractive indices agreed with the previous data for bulk crystals.