{'fraction_non_alphanumeric': 0.03426791277258567, 'fraction_numerical': 0.03894080996884735, 'mean_word_length': 4.270491803278689, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Properties of Cu2O Thin Films for All-Oxide Solar Cells

In this work, p-type Cu2O thin films deposited by RF magnetron sputtering for Cu2O based all metal oxide solar cells were studied as a function of oxygen partial pressure ratio at room temperature. The Cu2O (111) x-ray diffraction peaks were indicated as a function of oxygen partial pressure ratio. Optical band gap energies of as-deposited Cu2O thin films ranged from 1.88 to 1.96 eV as a function of oxygen partial pressure ratio. The resistivity and mobility of the p-type Cu2O thin film with an oxygen partial pressure ratio of 2.4% was 2 ×104 Ω·cm and 15.1 cm2/V·s, respectively.