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pMOSFET Off-state Leakage and Junction Leakage Current in Ge-based Devices

The impact of the post-implantation Rapid Thermal Anneal (RTA) temperature on the leakage current of p+n junctions fabricated in epitaxial Ge-on-Si substrates is analyzed in terms of the area and the peripheral leakage current component. While the former is not clearly affected, it is shown that the peripheral leakage current density increases in the range 500 to 600oC. A similar trend is found for the off-state leakage current of pMOSFETs made in the same substrates. This is ascribed to a higher activation of the halo implantation, which generates a higher band-to-band tunneling at the interface. It is, finally, shown that replacing the standard BF2 extension implantation by a Ge pre-amorphization followed by a low-energy B implant improves the area leakage current density, most likely because of a lower residual damage.