{'fraction_non_alphanumeric': 0.029442691903259727, 'fraction_numerical': 0.002103049421661409, 'mean_word_length': 5.304635761589404, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Technology development for GaN/AlGaN HEMT hybrid and MMIC amplifiers on semi-insulating SiC substrates

The GaN/AlGaN-on-SiC HEMT is being pursued as the active element on which to base next-generation high-frequency power amplifiers. Advances in III-nitride growth and processing techniques for commercial production of optoelectronic devices are being applied to advance the state-of-the-art for GaN/AlGaN HEMTs. Demonstrations of extremely high power density and total RF power from these unipolar, high-frequency transistors adequately demonstrate their potential for superior power performance over GaAs-based devices at 10 GHz. In order to satisfy the requirements for high-power, wide-bandwidth amplifiers, the next level of innovation for this technology is to develop monolithic microwave integrated circuits (MMICs). The latest developments have allowed us to demonstrate the first operational MMIC amplifier in the GaN-on-SiC HEMT platform.