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Synthesis of silicon-based dielectric films by excimer laser ablation

Silicon oxide, oxynitride and nitride films are deposited at low temperature (<EQ 450 degree(s)C) by pulsed ArF excimer laser ablation from silicon, silicon monoxide, fused silica and silicon nitride targets, performed under vacuum and in oxygen atmosphere. We investigate in this paper the specific influence of laser fluence, target materials, substrate temperature and oxygen pressure on the composition and final properties of SiOxNy grown layers. The process conditions are optimized in order to deposit good quality silicon oxide and silicon nitride thin films.