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Chemically amplified resists for x-ray and e-beam lithography

The development of both negative and positive resists with high sensitivity and high resolution capability is critical to the production of devices using x-ray exposure technology. This paper describes a class of aqueous developable acid hardened negative and positive resists which produce crosslinked images under x-ray exposure and subsequent processing steps. The resists are chemically amplified for high sensitivity. Linewidths down to 0.1 micron have been printed with a negative resist using e-beam exposure, and 0.4 micron mask-limited featurers have been printed with an x-ray dose of > 60 mJ/cm2. The feasibility of a high resolution positive acid hardened resist has been demonstrated and remains to be optimized.