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Cobalt disilicide (CoSi2) Schottky contacts to 6H-SIC

Schottky contacts using CoSi2 to both n- and p-type 6H-SiC were fabricated. The contacts revealed good rectifying characteristics after annealing at 700°C. Low leakage currents and exponentially increasing currents over at least 5 decades were obtained in the forward bias mode. C–V- and I–V- measurements were used to establish the Schottky barrier heights for CoSi2 to 6H-SiC, 1.05 ± 0.05 eV and 1.90 ± 0.05 eV for n- and p-type respectively. Further annealing at 900°C changed the Schottky barrier heights on both n- and p-type significantly.