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Study on Physical Properties of Ultrasonic-Assisted Copper Electrodeposition in Through Silicon Via

Through silicon via (TSV) connection plays a significant role in 3D packaging technology. In this paper, copper electroplating in TSVs under different ultrasonic powers was realized through an ultrasonic electroplating system. The physical properties (surface roughness, Young's modulus and hardness) of ultrasonic-assisted copper electrodeposition in TSV were analyzed. Copper grain size inside the via was also measured and compared. Based on the analysis of experimental results, a conclusion could be reached that the increase of ultrasonic power has an effect on the physical properties of copper plating in TSV. It can effectively reduce the surface roughness of the copper plating surface. Besides, the increase of ultrasonic power can increase the values of Young's modulus and hardness. It is also found that the decrease in copper grain size results in a tight connection between copper crystal grains. Explanations on the changes of physical properties under different ultrasonic power have been provided.