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Band-to-Band Auger Recombination in Indirect Gap Semiconductors

Electron–hole pairs in semiconductors may recombine through an Auger process. The theory for this process was worked out by Beattie and Landsberg, for a semiconductor with a simple and direct band structure. They found that the conservation laws for energy and crystal momentum lead to a threshold energy for this type of recombination. In the present paper it is shown that an Auger process may equally well take place in an indirect gap semiconductor, without participation of phonons, and that the activation energy, depending on the band structure, may be very low and even accidentally zero. A survey of available band data for silicon and germanium shows that for both these materials the band structure is favourable for an Auger process with low threshold energy. A perturbational approach is applied for calculating the transition rates for silicon and germanium. The results are compared with recent experimental data.