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Express Method of Estimation of Etched Ion Track Parameters in Silicon Dioxide Template

It is proposed to use the ellipsometry as an express method of estimating etched ion track parameters in a silicon dioxide template. Ellipsometric studies are carried out on a series of SiO2/Si templates with pores in the silicon oxide layer. Using the standard model of the interaction of a polarized light beam with a layered structure of silicon oxide on silicon, the basic parameters of the pores are determined through mathematical transformations. In order to determine the validity of the proposed model the results obtained with the ellispometry were compared with the data of scanning electron microscopy. Limitations of the proposed method are discussed.