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Study on grating coupling very long wavelength GaAs/AlGaAs QWIP

Because of the isotropic energy band structure of the Γ electrons in N type GaAs/AlGaAs quantum well infrared photodetector (QWIP), normal incident radiation absorption is impossible so that the optical grating becomes key requirements for such QWIPs. The development of very long wavelength infrared GaAs/AlxGa1-xAs quantum well Infrared photodetectors (QWIPs) is proposed in the paper based on optimization of 2-d period grating design, processing of detector, and a 16μm cutoff wavelength QWIP has been demonstrated at 40K. The blackbody responsibility Rv=3.4847×106V/W is obtained. The peak detectivity reaches D* λ=2.962×1010cm•Hz1/2/W.