{'fraction_non_alphanumeric': 0.02710843373493976, 'fraction_numerical': 0.01355421686746988, 'mean_word_length': 5.157407407407407, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Fast Lateral Transport of Excitons in a GaAs/AlGaAs Quantum Well

We have studied the lateral transport of excitons in a GaAs/AlGaAs single quantum well by the exciton time-of-flight technique. The lateral motion of excitons has been measured as a function of temperature (4 K to 40 K) and excitation density (≥108 cm-2). Our analysis shows that the exciton diffusivity at temperatures below 10 K becomes considerably enhanced, implying extremely long (several micrometers) exciton mean free paths. This behavior is discussed in terms of several scattering mechanisms including interaction with non-equilibrium phonons emitted during energy relaxation of carriers.