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Recombination statistics of non-equilibrium carriers in the model of semiconductor with donor-acceptor pairs possessing variable recombination activity

. The recombination rate of non-equilibrium carriers has been calculated for the model of the semiconductor with donor-acceptor pairs, the recombination activity of which decreases during excitation. It has been shown that, even at a very low inertia of intra-complex exchange, this process can lead to decreasing the recombination rate. The obtained results demonstrate a principal distinction from the classical Shockley–Read statistics.