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Infra-Red Detection Using Minority Carrier Exclusion

The responsivity of narrow gap photo-detectors (e.g CMT) can be increased, and noise processes reduced by the use of minority carrier exclusion in a suitably designed structure. It is found that, while diffusion plays no role within the exclusion region, it is a major factor in determining its size. Experimental data excellently match computer modelled predictions, showing that the reduced electron concentration in an uncooled device leads to significantly improved photoconductor performance.