{'fraction_non_alphanumeric': 0.03345724907063197, 'fraction_numerical': 0.0, 'mean_word_length': 5.125, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Atomic layer deposition of MnOx for Cu capping layer in Cu/low-k interconnects

We demonstrated atomic layer deposition (ALD) of manganese oxide (MnOx) for Cu capping layer. This process is expected to have not only EM (electro-migration) improvement but also admissibility of surface Cu oxidation. That will provide easy time and atmosphere management after chemical mechanical polishing (CMP). In this study, we confirmed Mn(Ox) coverage on Cu without degradation of leakage current and indication of EM improvement with simple EM test.