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Device simulation of CH3NH3PbI3 perovskite/heterojunction crystalline silicon monolithic tandem solar cells using an n‐type a‐Si:H/p‐type µc‐Si1–xOx:H tunnel junction

We investigate perovskite/heterojunction crystalline silicon monolithic tandem solar cells by using device simulation. A hydrogenated amorphous and microcrystalline silicon‐based tunnel recombination junction is applied to the tandem solar cells. The influence of the conduction and valence band offset between the n‐type layer of the perovskite top cell and the tunnel recombination junction was investigated. To obtain excellent solar cell performance, the conduction band offset should be 0–0.6 eV, although the valence band offset does not affect the solar cell performance. We also found that higher fill factor is expected when the n‐type layer of the perovskite top cell is located on the tunnel recombination junction compared with the structure in which the hole conductor is located on the tunnel recombination junction.