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Mott lecture: How bonding concepts can help understand amorphous semiconductor behavior

The article discusses how bonding concepts have allowed the development of amorphous semiconductors, in particular the 8−N rule of bonding, the doping mechanism in a‐Si:H, the weak effect of disorder on s states in amorphous oxide semiconductors, the strong effect of disorder on p states in amorphous carbon, and the effect of the change from resonant bonding to simple molecular covalent bonding in chalcogenide phase change materials.