{'fraction_non_alphanumeric': 0.028944911297852476, 'fraction_numerical': 0.009337068160597572, 'mean_word_length': 4.922651933701657, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
A quantitative analysis of stress-induced leakage currents in ultra-thin silicon dioxide films

A quantitative analysis of stress-induced leakage currents (SILCs) in ultra-thin silicon dioxide films is described, which enables the extraction of trap parameters, e.g. trap site location. Assuming a two-step trap-assisted inelastic tunneling mechanism, conduction of electrons through silicon dioxide films proceeds as follows: First, electrons tunnel from the cathode into neutral trap sites followed by an energy relaxation into the lowest available energy state of these trap sites. Finally, electrons reach the anode by a direct tunneling process. Modeling SILC characteristics of a stressed 6.8-nm-thick SiO/sub 2/ film reveal a trap site location at 4.47 nm relative to the cathode interface. SILCs in the thickness range from 5.1 to 9.6-nm can be explained by the linear increase of the trap sheet charge density on oxide thickness, which suppresses local tunneling currents between cathode interface and trap sites by a reduction of the local oxide electric field.