{'fraction_non_alphanumeric': 0.023054755043227664, 'fraction_numerical': 0.0, 'mean_word_length': 6.239583333333333, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
High-resolution characterization of microdefects by X-ray diffuse scattering

Highly tellurium–doped GaAs samples were investigated by high–resolution X–ray diffractometry in the triple–axis mode. Different reciprocal maps, depending on the technological process, are presented and interpreted as caused by different microdefects. Computer simulations allow us to determine the type of microdefects, namely the orthorhombic defects and dislocations loops. A theoretical approach for defects composed of several atoms is proposed. Alternative descriptions of pairs of defects as uniform distributions of such paired defects or non–uniform distributions of single–defect components are presented.