{'fraction_non_alphanumeric': 0.0211864406779661, 'fraction_numerical': 0.0, 'mean_word_length': 5.445454545454545, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Atomistic numerical study of molecular-beam-epitaxial growth kinetics.

We report on the results of a stochastic Monte Carlo simulation study of molecular-beam epitaxial-growth dynamics with particular emphasis on the role of atomistic kinetic processes on crystal-growth quality. Using a model that goes beyond the standard solid-on-solid approximation and allows for vacancies and overhangs, we investigate the effect of bulk vacancies on the growth dynamics. Based on our simulation results, we discuss the role of reflection high-energy electron diffraction (RHEED) intensity oscillations in determining the growth quality and the interplay between the growth rate and the various intrinsic kinetic rates