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Research on distribution of energy levels in ion implanted monocrystalline silicon in the aspect of photovoltaic applications

The aim of this article is to present the results of research aimed at confirmation whether it is possible to form so-called intermediate band in silicon band gap region by means of implantation of neon ions. Obtained results were discussed with particular emphasis on possible applications in photovoltaic industry. As it is commonly known, the idea of intermediate band solar cells reveals considerable potential as the most fundamental principle of next generation of silicon solar cells. This is because the efficiency of solar cells with intermediate band is supposed to exceed current theoretical limits, which were defined for older generations of solar cells. In progress of the research, series of antimony-doped silicon samples were subjected to implantation of Ne ions, followed by high-temperature annealing. Experiment included different values of fluence of implanted ions, as well as different post-implant annealing temperatures. Tests were conducted using thermal admittance spectroscopy, under conditions of variable ambient temperature, measuring signal frequency and bias voltage in order to localize deep energy levels, introduced by ion implantation. In case of certain samples, it was possible to observe evidence indicating on the possibility of occurrence the phenomena of band gap narrowing and energy levels splitting.