{'fraction_non_alphanumeric': 0.03284258210645526, 'fraction_numerical': 0.0, 'mean_word_length': 5.5, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Suppression of Plasma Charging Damage in Sub-Micron Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) with Gate Oxynitride by Two-Step Nitridation

The two-step nitridation process of gate oxynitride in metal-oxide-semiconductor Field-Effect Transistors (MOSFETs) is utilized to demonstrate good electrical reliability in MOSFETs. The low temperature and short time of the second nitridation step can form a nitrogen pile-up at the poly-Si/oxynitride interface which leads to the reduction of detrimental species diffused from poly-Si to the oxynitride. This process reduces the plasma-charging damage even more as the charging effect is increased. Smaller characteristic degradation due to nitrogen pile-up at both sides of the gate oxynitride ensures better gate oxynitride integrity (GOI) in practical integration for ultra-large-scaled integration (ULSI) applications.