{'fraction_non_alphanumeric': 0.025505716798592787, 'fraction_numerical': 0.006156552330694811, 'mean_word_length': 5.322222222222222, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Properties of hydrogenated and fluorinated amorphous silicon–carbon alloy films prepared by magnetron sputtering

Abstract Hydrogenated and fluorinated amorphous silicon-carbon alloy films have been prepared by magnetron sputtering of silicon in Ar–CH4–CF4 gas mixtures. The dependence of compositional, structural, optical and optoelectronic properties of the films on the ratio R H of the partial pressure of CH4 to the total gas pressure and the corresponding ratio R F for CF4 have been investigated. It is found that (i) the optical band gap as well as the activation energy of the dark conductivity is controllable, (ii) SiC bonds are formed easily and (iii) the photoconductivity is improved by about one order of magnitude, compared with the films prepared using Ar-H2-CF4 gas mixtures reported previously. In addition, several kinds of extrema against R H were observed in such quantities as the room-temperature photoconductivity, the edge-width factor B in the optical absorption spectrum, and the activation energy of the photoconductivity. In the films having these extrema, the AM1 photoconductivity and photosensitivity...