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E‐band InAs quantum dot laser on InGaAs metamorphic buffer layer with filter layer

InAs quantum dots (QDs) are receiving attention as next-generation Eband light source that offers high-temperature operation and temperature insensitive operation. However, high-density crystal defects occur at the interface between the InGaAs buffer layer and GaAs, resulting in reduced device performance and shortened lifetime. Here, E-band QD lasers are demonstrated on InGaAs buffer layer, which suppressed the spread of dislocation by introducing a high-temperature annealing and a strained layer superlattice filter. In the device, the peak wavelength at room temperature is measured to be 1427 nm and the threshold current density was 440 A/cm2. This result indicates that E-band QD laser structures on low threading dislocation density are promising for the realisation of high-performance E-band lasers.