{'fraction_non_alphanumeric': 0.04640582347588717, 'fraction_numerical': 0.020018198362147407, 'mean_word_length': 4.612244897959184, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Electrical characteristics and short-channel effect of c-axis aligned crystal indium gallium zinc oxide transistor with short channel length

A channel length of a c-axis aligned crystal indium gallium zinc oxide (CAAC-IGZO) transistor having low off-state current at a yA/µm level was decreased to 100 nm, and the electrical characteristics and short-channel effect of the CAAC-IGZO transistor were researched. As a result, we found that, in the CAAC-IGZO transistor with L = 100 nm, even with a gate insulator film having an equivalent oxide thickness (EOT) = 11 nm, an extremely small off-state current of 380 yA/µm at 85 °C is maintained, in addition channel length dependence of the electrical characteristics is hardly seen. Favorable values of characteristics of the CAAC-IGZO transistor can be obtained, such as subthreshold slope (SS) = 77 mV/dec, drain induced barrier lowering (DIBL) = 73 mV/V, threshold voltage (Vth) = 0.65 V, and on-state current (Ion) = 65 µA/µm. These results suggest the possibility that the CAAC-IGZO transistor can be applied to an LSI in a deep submicron region.