{'fraction_non_alphanumeric': 0.03496503496503497, 'fraction_numerical': 0.0, 'mean_word_length': 5.366666666666666, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
A prototyping technique for large-scale RTD-CMOS circuits

In this paper we present a method for prototyping circuits designed using resonant-tunneling diodes (RTDs) and complementary metal-oxide-semiconductor (CMOS) devices that can enable us to realize large-scale digital circuits with negative differential-resistance (NDR) devices. Our method is based on designing CMOS circuits which can emulate the current-voltage (I-V) characteristics of RTDs. We demonstrate the effectiveness of our scheme by means of simulation and fabrication of an NDR shift register circuit.