{'fraction_non_alphanumeric': 0.024705882352941175, 'fraction_numerical': 0.0058823529411764705, 'mean_word_length': 4.635761589403973, 'pattern_counts': {'":': 0, '<': 1, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Electron Energy Loss Spectroscopy (EELS) of GaN Alloys and Quantum Wells

In the last 6-7 years there has been considerable experimental and theoretical interest in GaN and its alloys for use in light emitting applications. GaN is a direct gap semiconductor with a bandgap at ∼ 3.4 eV. When alloyed with in and/or Al the bandgap can be tuned to any wavelength ranging from UV to red. to further the development of GaN based devices, reliable methods are required to measure and predict the optical and electronic properties. EELS is one of the few techniques that can study these properties with high spatial resolution (< 1 nm) if a small electron probe is used, such as that in a scanning transmission electron microscope (STEM). High spatial resolution is necessary as, to improve efficiency, devices are normally based on quantum well structures.