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The role of the charge generated during heavy ion irradiation in the gate damage of medium voltage power MOSFET

An experimental study aimed to identify the test conditions at which latent damages are created is presented for different ion species with different energy losses both in the oxide and in the silicon. The experimental results, interpreted with the help of 3D finite element simulations, clarify the role played by the charge generated during the ion strike in starting the creation of latent damage. It is shown that a significant role is played by the charge generated in the oxide and at the silicon interface.