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Influence of atmospheric-pressure plasma treatment on surface and electrical properties of photodiode chips

Atmospheric pressure (AP) plasma has been used for the surface activation of gold (Au) prior to low temperature Au-Au bonding. In this paper, flip-chip type Indium Gallium Arsenide (InGaAs) photodiode (PD) chips were treated by AP plasma jets. The plasma treatment was performed with two different mixed gases (Ar+O2 and Ar+H2). Degradation of PD chips under AP plasma irradiations was investigated through current-voltage (I-V) measurements performed under dark condition at room temperature. The results show that dark current of PD chips was increased after Ar+O2 AP plasma treatment and significantly improved after subsequent Ar+H2 AP plasma treatment.