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Photoconduction in Cd1-xMnxTe

The photoconductivity has been studied in the semimagnetic semiconductor Cd1-xMnxTe in the temperature region 4.2–300 K and in the spectral interval 0.6–2.5 eV. The content of the magnetic Mn2+ ions in the measured single crystals was x=0.05, 0.30 and 0.50. The forbidden gap Eg determined from the intrinsic peak position in the spectral dependence of the photosensitivity showed a normal blue shift down to 4.2 K in all crystals. The Eg values extrapolated to T=0 were Eg(x=0.05)=1.64 eV, Eg(0.30)=2.04 eV and Eg(0.50)=2.24 eV. In external magnetic fields up to 8 T a red shift of Eg was found. An acceptor level responsible for both of the dark conductivity and the sensitizing of the photoconductivity was found 0.15 eV above the valence band in the x=0.05 crystal. The acceptor was found to become deeper with increasing Mn content.