{'fraction_non_alphanumeric': 0.04259259259259259, 'fraction_numerical': 0.024074074074074074, 'mean_word_length': 5.011111111111111, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Surface Damage in GaInAs/GaInAsP/InP Wire Structures Prepared by Substrate-Potential-Controlled Reactive Ion Beam Etching

We investigated photoluminescence intensity dependence on the width of GaInAs/GaInAsP/InP wire structures prepared by substrate-potential-controlled reactive ion beam etching. As a result, the sidewall recombination velocity was estimated to be 2.5 ×103 cm/s under a low excitation power of approximately 1 W/cm2 (Ar+-ion laser, λ=514.5 nm) at 77 K, and was almost the same as that fabricated by wet chemical etching.