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Characterization of CdS Thin Films Depending on the Processing Conditions

CdS thin films were grown by a chemical bath deposition method. The physical properties of the CdS thin films were investigated depending on the various processing conditions. A surface morphological study was done by atomic force microscope(AFM) and the structural property was investigated by scanning electron microscope(SEM) and transmission electron microscope(TEM) alternating the processing temperature. Optical transmittance measurement was obtained by UV-Vis-NIR spectrometer. From the experimental results, it was confirmed that the kinetics of CdS film growth was associated with the heterogeneous growth mechanism proposed by Ortega-Borges and Lincot. With an appropriate processing temperature of 55°C and with 0.3 mM CdSO4, 0.1 M thiourea (T.U), and 1.5 M mole concentration of ammonia, transparent and high-resistivity CdS thin films resulted with good conformal coverage.