{'fraction_non_alphanumeric': 0.03218645948945616, 'fraction_numerical': 0.009988901220865706, 'mean_word_length': 5.263888888888889, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Magneto-optic and magnetotransport study of InAs/Ga1-xInxSb superlattices

InAs/Ga1-xInxSb superlattices have been investigated by magneto-optical and magnetotransport techniques. Bandgaps, determined from interband magneto-optical measurements and from the temperature dependence of the intrinsic carrier concentration, are in the long-wavelength infrared region (8.3 to 12.4 mu m) and are in good agreement with gaps calculated from a two-band model. Both electron and hole effective masses were measured by cyclotron resonance and the electron effective mass is found to be a factor of 4-5 times larger than in HgCdTe (the industry-standard IR material). This is necessary for reduced dark currents and good optical absorption coefficients in this material. Finally, the first observation of higher-order electron and hole subbands (by interband magneto-optics) in this material system is reported.