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Performance Improvement on HfO2-Based 1T Ferroelectric NVM by Electrical Preconditioning

Novel HfO2-based non-volatile ferroelectric field effect transistors (FeFETs) are revolutionizing the field of ferroelectric memories and have the potential to be a solution for eNVM in advanced scaled nodes (<40nm). Reducing variability and improving data stability are compulsory steps to achieve a reliable product. We investigated the impact of preconditioning (PR) cycles on 0.20 μm2 test cells on device performance both in terms of programmability and VTH stability. PR is a one-time operation performed in parallel on the entire array and it allows recovering bit errors by improving state stability and tightening high and low VTH distributions.