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Characterization of semiconductor structures using scanning microwave microscopy technique

In this work, we have developed a near field scanning microwave microscopy method and applied it to study semiconductor samples. To do so, we have used a commercial Atomic Force Microscope (NT-NMDT Integra) to which we have coupled a half wavelength micro-strip line resonator and an Agilent N5242A PNA-X Network Analyzer. The AFM tip is connected at the edge of the microstrip which is connected to the PNA. The reflection coefficient S11 is measured as the tip is scanned, at some distance and without contacting it, on the device under test. The variations of the S11 parameter are related to the topographical and dielectric properties of the material under the tip.