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Charge‐carrier mobilities in Cd0.8Zn0.2Te single crystals used as nuclear radiation detectors

Charge‐carrier mobilities have been measured for the first time in Cd0.8Zn0.2Te single crystals using time‐of‐flight measurements of charge carriers produced by short (10 ns) light pulses from a frequency‐doubled Nd:YAG laser (λ=532 nm). The electron mobility displayed a T−1.1 dependence on the absolute temperature T in the range 200–320 K, with a room‐temperature mobility of 1350 cm2/V s. The hole mobility displayed a T−2.0 dependence in the same temperature range, with a room‐temperature mobility of 120 cm2/V s. Cd0.8Zn0.2Te appears to be a very favorable material for a room‐temperature electronic nuclear radiation detector.