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Spectroscopic analysis of the chemical structure at the CdS/Cu(In,Ga)Se2 interface in high-efficiency solar cell devices

High-efficiency Cu(In1-xGax)Se2 (CIGSe)-based solar cells utilize a CdS buffer layer between the window and the chalcopyrite absorber. Soft x-ray spectroscopies were employed to investigate the chemical properties of the CdS/CIGSe interface and its dependence on the details of the chemical bath deposition (CBD) of CdS. We have investigated the CdS/CIGSe interface after various CdS CBD times (0, 4, and 12.5 minutes). We find evidence for the presence of Cd(OH)2 at the CdS/CIGSe surface for the thickest CdS sample.