{'fraction_non_alphanumeric': 0.030456852791878174, 'fraction_numerical': 0.01692047377326565, 'mean_word_length': 4.97979797979798, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Temperature Dependence of Electrical Properties of Nitrogen-Doped 3C-SiC

The electrical properties of nitrogen-doped n-type 3C-SiC layers, epitaxially grown on Si by chemical vapor deposition, have been investigated at temperatures ranging from 10 to 1000 K. The activation energy of the N-donors was obtained from the temperature dependence of carrier density. The donor-density dependence of the activation energies of donors in N-doped 3C-SiC is quite different from that of unintentionally-doped ones, and the donors in unintentionally-doped 3C-SiC were proved not to be nitrogen atoms.