{'fraction_non_alphanumeric': 0.024830699774266364, 'fraction_numerical': 0.006772009029345372, 'mean_word_length': 4.450819672131147, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 2, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Estimate of the precision of the method of separate determination of impurity concentrations from measurements of the Hall effect

An example of p-type Si:B:Ga with different degrees of compensation was used in a comparative estimate of the precision of separate determination of the impurity concentrations from the temperature dependence of the hole density p(T) in the case of one and two dopants characterized by ionization energies differing by a factor less than 2. An investigation was made of a function which describes the rms deviation in the space of the parameters D(N c ,N 2 ) (N c , N 1 , and N 2 are the concentrations of the compensating impurity, and of boron and gallium, respectively, subject to the condition N 2 >>N 1 ) on the assumption that N 2 , as well as the ionization energies of B and Ga are known. It was found that in the presence of two dopants the function D(N c , N 1 ) has a «ravine-like» relief in the vicinity of a minimum and, for relationships between N c and N 1 , the scatter of the required quantities exceeds one order of magnitude. In this situation an increase in the precision of the determination of p(T) does not result in a significant improvement in the precision of the calculated parameters. If only one dopant is present, the precision of calculation of the parameters in high