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Zirconium Oxide based memristors fabrication via Electrohydrodynamic Printing

There has been great research interest for memristors worldwide as it has many potential applications. Resistive memories based on metal oxide thin films have been extensively studied for application as next generation nonvolatile memory devices since they have several advantages, such as good scalability, low-power consumption, and fast switching speed. However, the fabrication of metal oxide based memristors usually consists of conventional physical vapor deposition (PVD) techniques and lithography which are expensive, time consuming and complicated in nature. In this paper, we report the successful fabrication of ZrO2 based memristor using electrospray deposition (ESD) and electrohydrodynamic printing (EHDP) techniques which are cost-effective, room temperature techniques. The Ag electrode has been patterned on glass substrates through EHDP technique and the active layer of ZrO2 has been spray deposited on the Ag electrode followed by the patterning of top Ag electrode. The resistive switching properties of ZrO2 layer with Ag electrodes was investigated in this study.