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Effect of Silicon Compounds on the Properties of Pressureless Sintered Aluminum Nitride

In this paper, the aluminum nitride (AlN) was fabricated by pressureless sintering with YF3 and various silicon compounds as the sintering aids. The phase, microstructure, density and thermal conductivity were characterized by XRD, SEM and laser thermal diffusivity method. The sample densities were detected varied from 3.17 to 3.30g/cm3 and room-temperature thermal conductivity varied from 196 to 233 W/m·K. Samples sintered with YF3 additives have the highest thermal conductivity. The sintering aids with SiO2, Si3N4 and SiC would decrease the density and the thermal conductivity obviously, and also change the fracture mode from the intergranular to transgranular , which is a key for the toughness of the AlN substrate.