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Effect of Ar+ irradiation on the behaviour of carbon nanotube transistor

The characteristics of carbon nanotube field effect transistor are investigated after the whole device is irradiated with Ar+ ions. The resistance become much higher due to the electron scattering at vacancies produced by Ar+ irradiation. In addition, the subthreshold slop, S, (dV G/d(log I D)) increases and the Schottky barrier height decreases after the irradiation, which imply the interface states generated within the band gap of the semiconducting single walled carbon nanotube. Therefore, we suggest a way that makes a transparent contact for electron transport by manipulating the vacancy formation at the interface between nanotube and metal leads. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)