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Improved Performance for OTFT with HfTiO2 as gate dielectric by N2O annealing

OTFTs with HfTiO2 as gate dielectric have been successfully fabricated. The devices show small threshold voltage and subthreshold slope, and thus are suitable for low-voltage and low-power applications. This work also finds that OTFT with gate dielectric annealed in N2O has larger dielectric constant, smaller threshold voltage, smaller subthreshold slope and larger on/off ratio than the N2-annealed sample. This demonstrates that the N2O annealing is an important surface treatment for preparing a high-quality insulator/organic interface.