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Thermal function in silicon substrate of CCD induced by combined laser

This paper establishes a theoretical model of silicon substrate irradiated by the combined laser which is composed of a high-peak-power laser and a continuous laser. We use the finite element method to analyse the temperature of the silicon substrate irradiated by the combined laser. Then we compare the damage effect of the silicon substrate which is respectively irradiated by the combined laser and continuous laser, which is under the condition that the average power density of combined laser is equal to the continuous laser. The results show that the laser can melt the surface of silicon substrate in a short time, while the continuous laser can not achieve this effect. The combined laser damage in silicon substrate is stronger than continuous laser.