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Selective Seeding Of Copper Films On Polyimide Patterned Silicon Substrate, Using Ion Implantation

Our recent work has established the successful use of ion implantation into silicon [1] or polyimide [2] to seed the electroless plating of copper on these surfaces. The substrates exhibit a threshold implantation dose, below which the plating does not occur. The threshold implantation dose for seeding of electroless Cu films on Pd implanted Si was observed to be about 20 times lower than that for polyimide, In this paper we demonstrate a successful exploitation of this difference in threshold dose to deposit thin copper structures selectively only on