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Magnetic anisotropy and domain structure in carrier-controlled ferromagnetic semiconductors

A review is given of the experimental situation and theoretical modelling of micromagnetic properties of zinc-blende ferromagnetic semiconductors, such as (Ga, Mn)As and p-(Cd, Mn)Te. It is emphasized that the Zener p–d model explains quantitatively the effect of strain on the easy axis direction as well as predicting correctly the presence of the reorientation transition, observed as a function of hole concentration and temperature. Possible suggestions put forward to explain the existence of in-plane uniaxial magnetocrystalline anisotropy are then quoted. Finally, magnetic stiffness computed within the same model of ferromagnetism is presented, and is shown to explain the domain width in perpendicular films. It is emphasized that a rather large magnitude of the stiffness accounts for both the excellent micromagnetic properties of ferromagnetic (III, Mn)V films and the quantitative applicability of the mean-field approximation to these materials.