{'fraction_non_alphanumeric': 0.02118270079435128, 'fraction_numerical': 0.00088261253309797, 'mean_word_length': 4.93717277486911, 'pattern_counts': {'":': 0, '<': 1, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Intrinsic Gap States in Semiconductors with Inverted Band Structure: Comparison of SnTe vs PbTe Nanocrystals

In this contribution we compare size-dependent optical properties of PbTe and SnTe nanocrystals (NCs). We demonstrate that the size dependence of the band edge absorption line and the photoluminescence (PL) of PbTe NCs can be quantitatively described by optical transitions between the lowest quantum confined states of conduction and valence bands. In contrast, the optical properties of SnTe NCs are strongly influenced by intrinsic gap states that arise from the inverted band structure that can be described by introducing a negative energy gap Eg < 0. In principle, these intrinsic gap states could be observed directly in PL and absorption of small size SnTe NCs, where the wave functions of these states are spread over the entire NC volume. In our samples, however, these transitions are not observed due to self-doping of SnTe NCs by holes created from negatively charged Sn vacancies. As a result, the absorption is blue-shifted due to filling of the gap states and confined valence band levels by holes (pheno...