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Confined and guided catalytic growth of crystalline silicon films on a dielectric substrate

This paper presents the synthesis of epitaxial silicon (Si) nanoblades of controlled dimensions (thickness 50nm, width 200nm to 2μm) obtained by catalytic growth in a tunnel of confinement. The fabrication of horizontal cavities containing the catalyst slug is first described to show how the tunnel empty space is formed using an amorphous germanium sacrificial layer. These cavities served as a template to guide VLS (Vapor-Liquid-Solid) growth of crystalline Si standing on an amorphous substrate. The resulting self-assembled Si nanoribbons can be regarded as localized silicon-on-insulator (SOI) film that can be reproduced in the vertical direction to enable three-dimensional integration. The nature of the grown silicon film is characterized by scanning and transmission electron microscopy (SEM and TEM) as well as by electron backscattered diffraction (EBSD).