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Hf Oxide Film Sputtering Condition Dependence of Ti/HfOx/Pt Resistive Random Access Memory

We studied Ti/HfOx/Pt ReRAM device switching characteristics as a function of Hf02 sputtering condition. Hf02 films were formed with DC reactive sputtering at various (O2/ Ar) flow ratios between 0.25 and 2.5. The most stable repetition of switching was obtained at (O2/ Ar) flow ratio of 2.0. It is suggested that good switching characteristic is obtained for the device with the Hf02 film of moderate oxygen vacancy concentration.