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Heat dissipation schemes in QCLs monitored by CCD thermoreflectance (Conference Presentation)

In this paper we present the development of the instrumentation for accurate evaluation of the thermal characteristics of quantum cascade lasers based on CCD thermoreflectance (CCD TR). This method allows rapid thermal characterization of QCLs, as the registration of high-resolution map of the whole device facet lasts only several seconds. The capabilities of the CCD TR are used to study temperature dissipation schemes in different designs of QCLs. We report on the investigation of thermal performance of QCLs developed at the Institute of Electron Technology, with an emphasis on the influence of different material system, processing technology and device designs. We investigate and compare AlInAs/InGaAs/InP QCLs (lattice matched and strain compensated) of different architectures, i.e., double trench and buried heterostructure (BH) in terms of thermal management. Experimental results are in very good agreement with numerical predictions of heat dissipation in various device constructions. Numerical model is based on FEM model solved by commercial software package. The model assumes anisotropic thermal conductivity in the AR layers as well as the temperature dependence of thermal conductivities of all materials in the project. We have observed experimentally improvement of thermal properties of devices based on InP materials, especially for buried heterostructure type. The use of buried heterostructure enhanced the lateral heat dissipation from the active region of QCLs. The BH structure and epilayer-down bonding help dissipate the heat generated from active core of the QCL.