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Selective chain reaction of acetone leading to the successive growth of mutually perpendicular molecular lines on the si(100)-(2 x 1)-H surface.

The successive growth of mutually perpendicular molecular lines from one dangling-bond (DB) site on the Si(100)-(2 x 1)-H surface has been realized through a substrate-mediated chain reaction at 300 K. Among various molecules, acetone molecules undergo the most facile chain reaction with a DB site, which proceeds selectively on the Si(100)-(2 x 1)-H surface, resulting in only single molecular lines in the parallel-row (parallel to the dimer row) direction. The smaller size and higher reactivity of acetone molecules enable us to successively grow a parallel-row acetone line from the end of a cross-row (perpendicular to the dimer row) allylmercaptan line simply by changing the feed of gas molecules into the reaction chamber. Since the length of a molecular line is controlled by the number of gas molecules impinged, it is possible to turn a chain reaction from the cross-row direction to the parallel-row direction at any desired point on the surface. The reaction path of the adsorbing molecules is discussed. The present study provides a new means of fabricating mutually perpendicular molecular lines through a chain reaction initiating at a preselected DB site on the Si(100)-(2 x 1) surface.