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Performance improvement mechanisms of bias‐assisted photoelectrochemical treated GaSb‐based solar cells with ITO nanorod array

To improve the performance of gallium antimonide (GaSb)‐based solar cells, the bias‐assisted photoelectrochemical (PEC) oxidation method was used to form an oxide passivation layer on the p‐GaSb surface. The performance improvement mechanisms were attributed to the effective reduction of the surface state density and the carrier recombination in the solar cells. To further improve performance by reducing light reflection from the top surface of the GaSb‐based solar cells, the oblique‐angle electron‐beam deposition method was used to grow an indium‐tin‐oxide (ITO) nanorod array on the p‐GaSb surface as the antireflection coating. High performance of the resulting GaSb‐based solar cells was obtained compared with the conventional solar cells. Copyright © 2015 John Wiley & Sons, Ltd.