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A 10μm pitch interconnection technology using micro tube insertion into Al-Cu for 3D applications

Future 3-D applications require a very low pitch for inter-strata vertical interconnection. The last International Technology Roadmap for Semiconductors (ITRS) assessment for vertical interconnection predicts a need for decreasing the interconnection pitch to 10μm [1]. The room-temperature insertion technology has been proposed and developed using micro tubes as inserts [3] to address many assembling difficulties of industrial process. In the present work, we study the mechanical and electrical behavior of a single micro tube insertion into Al-0.5Cu pads. A modified nanoindenter with a very accurate load and displacement control is used, coupled with an electrical measurement device to qualify the insertion process. Finally, the best Die To Wafer (D2W) parameters are determined thanks to a composed experimental design.