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Deformation effects in electronic spectra of the layered semiconductors TlGaS2, TlGaSe2 and TlInS2

The deformation effects in electronic spectra of the ternary layered semiconductors TlGaS2, TlGaSe2 and TlInS2 are considered. It is shown that the influence of hydrostatic pressure, thermal expansion and variation of composition in solid solutions on the band gap of the crystals investigated can be described in the framework of one common model of deformation potentials. This model appears to be close to that of layered semiconductors of the A3B6 group, attesting to the fact that the main principles of formation of band structure in these two groups of layered crystals are the same.