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Very High Sensitivity GMR Spin-valve Magnetic Field Sensor

Magnetoresistive (MR) field sensors, or magnetometers, are well known to have the attributes of small size, low power consumption, broadband frequency response (including dc), and require relatively simple detection electronics to achieve high magnetic field sensitivity. As was previously shown [I], the intrinsic magnetic field sensitivity of a NiFe sensor employing the anisotropic-MR (AMR) effect could be increased by more than an order of magnitude with the addition of high permeability, thin-film flux-concentrators (e.g., Fig. 1). An intrinsic sensitivity, S _= URdWdH = 4%/0e, was demonstrated [I]. To our knowledge, this remains that highest value yet reported for an h4R field sensor. However, due to the considerably larger A R R coefficient (as well as magnetically thinner active sensing layer), a substantial increase in sensitivity is achievable by replacing the AMR element with a giant-MR (GMR) spin-valve element [2].