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Microscopic Analysis of the Degradation Mechanism of Gallium Arsenide Metal-Semiconductor Field-Effect Transistor

The microscopic degradation mechanism of the recess surface of GaAs metal- semiconductor field-effect transistor (MESFET) after a long duration aging is analyzed using a transmission electron microscope (TEM), Raman scattering and several other analytical methods. Crystallographic arsenic (As) and amorphous gallium (Ga) precipitated after the aging test. Raman scattering during device operation indicates that the temperature of the drain side is higher than that of the source side. Light emission by hot carriers is observed at the drain side of the device during operation. The degradation of the device is accelerated by the hot carriers generated by a thermionic field emission at the high-temperature drain side.