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Performance analysis of mixed CNT bundle interconnects at 10 nm technology

In recent past, the cross-coupling crosstalk becomes a dominating factor due to the closer proximity of wire that reduces the performance of coupled interconnects at lower technology. To overwhelm interconnect problems, this work demonstrates a comprehensive study of unshielded and active shielded spatially arranged mixed carbon nanotube (CNT) bundle (SMCB) and randomly distributed mixed CNT bundle (RMCB) interconnects at 10 nm technology. Using a driver-interconnect-load setup, a unique multi-conductor transmission line and an equivalent single conductor model is proposed considering the impact of different CNT diameters with their associated line and coupling parasitics. A resistive and CNT field-effect transistor (CNTFET) driver model is considered at 10 nm technology to demonstrate the impact of single line delay, cross-coupling delay, and power dissipation for the densely packed bundle at global lengths. It is observed that a CNTFET-based realistic RMCB exhibits on an average 29.19 and 39.56% reduced single line delay and power dissipation, respectively compared to different SMCB configurations at 700 µm interconnect lengths. Moreover, a shielded RMCB encouragingly provides an improved immunity of cross-coupling impact for the on-chip interconnects at 10 nm technology. Therefore, from fabrication and modelling aspects, a randomly distributed MCB can be proved as emerging interconnect for next-generation on-chip applications.