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Electrical Charactristics of Polycrystalline Silicon-Silicon Nitride-Silicon Dioxide-Silicon Structures

The influences of annealing at high temperatures and of impurity diffusion such as phosphorus and boron on fast surface states and instabilities under bias-temperature treatment were investigated. The fast surface states and instabilities increased by annealing in nitrogen, argon and oxygen. The instabilities were caused by the increase in conductivity of silicon nitride films. It was supposed that during annealing, localized strains under polycrystalline silicon electrodes were absorbed by silicon nitride films which in turn underwent large deformation and became filled with high density traps responsible for the increase of conductivity of silicon nitride films. Annealing in hydrogen reduced fast surface states and improved the instabilities. These phenomena are explained by the elimination of traps on SiO2–Si interface and in the bulk of silicon nitride.