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Study on Electrical Properties and Temperature Dependence of Energy Band Gap for ZnIn2Se4 Single Crystal Thin Film Grown by Hot Wall Epitaxy

A stoichiometric mixture of evaporating materials for ZnIn 2 Se 4 single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, ZnIn 2 Se 4 mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were 630 o C and 400 o C, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnIn 2 Se 4 single crystal thin films measured from Hall effect by van der Pauw method are 9.41 × 10 16 cm -3 and 292 cm 2 /v · s at 293 K, respectively. The temperature dependence of the energy band gap of the ZnIn2Se4 obtained from the absorption spectra was well described by the Varshni's relation, Eg(T) = 1.8622 eV − (5.23 × 10 -4 eV/K)T 2 /(T + 775.5 K).