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Photoluminescence and Optical Beam Induced Current Imaging of Defects

The minority carrier distribution in a semi-infinite semiconductor due to light focussed onto the surface via a high numerical aperture lens is given. The contrast obtained in both Photoluminescence and Optical Beam Induced Current defect imaging is derived as a function of the illuminating lens numerical aperture. It is shown that the maximum resolution attainable in both techniques is comparable.