{'fraction_non_alphanumeric': 0.02847222222222222, 'fraction_numerical': 0.013194444444444444, 'mean_word_length': 4.954545454545454, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
A high performance InGaN tunnel FET with InN interlayer and polarization-doped source and drain

An InGaN tunneling field-effect transistor (TFET) with a polarization-doped source and drain as well as an InN interlayer (PD-IL TFET) is proposed and investigated by Silvaco-Atlas simulations for the first time. This device features the graded InxGa1−xN source and drain where the ‘In’ fraction increases linearly in the source while it decreases linearly in the drain along the (0001) orientation. The unique design could realize the high PD carrier concentration in source and drain at the same time, benefiting from the nature of the polarization effect in III-Nitride materials. Thus, the random dopant fluctuations caused by conventional physical doping could be avoided effectively. Simulation results show that the PD-IL TFET with a 2 nm thick InN interlayer and ‘In’ fraction of 0.75 could achieve ON-state current (ION) of 74 μA μm−1, ION/IOFF ratio of 1013 and average subthreshold swing of as low as 1 mV dec−1. The effect of InN interlayer thickness and ‘In’ fraction of InxGa1−xN on the electrical characteristics of the PD-IL TFET are investigated and analyzed systematically. In addition, the circuit analysis and the feasible fabrication process issues of the proposed device are also presented and discussed. These results could break a new path to realize TFETs without physical doping in low power electronics applications.