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Effects of focused ion beam dwell time on nano fabrication

Copyright and Moral Rights for the articles on this site are retained by the individual authors and/or other copyright owners. For more information on Open Research Online's data policy on reuse of materials please consult the policies page. Focused ion beam (FIB) systems are widely used as a versatile tool for nanofabrication prototyping, device modification and ion beam lithography [1]. However, there are still many unexplored effects in FIB milling using Ga + due to the FIB beam and its halo, particularly at low total dose. Generally, dwell time plays an important role as it controls the time of continuous ion implantation at each milled pixel. It is known that the beam profile changes with beam current [2] but how this affects the milling is not well known. In this study the effect of varying beam current and pixel dwell time on milling was investigated for fixed total dose. The effects were analyzed using AFM and Raman Spectroscopy.