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A High Efficiency S-band Power Amplifier Based on GaN-on-Si with Bandwidth of 1 GHz

This paper presents the designs and measurement performances of a high efficiency S-band class AB power amplifier (PA) MMIC with bandwidth of 1 GHz using 0.25μm GaN-on-Si process technology. Under pulse wave operating condition (100us/10%) from 2.7 GHz to 3.7 GHz, the designed PA demonstrates peak power added efficiencies (PAE) from 36 % to 49.4 %, and peak output powers from 37.4 dBm to 38.5 dBm, power gain larger than 8 dB, and chip size of 4.5 mm2. The PA exhibits excellent performance over a wide bandwidth of 1 GHz (fractional BW of 31.2%) in the S-band.