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A study of high-field transient conduction in amorphous films of Si12Te48As30Ge10

Experimental values are presented of the trap-limited drift mobility in chalcogenide glasses at high electric fields. The observed field dependence has been found to be compatible with Poole-Frenkel emission from charged centres situated at an energy of approximately 0.38 eV above the valence band edge. The concept of screening by fixed charges has been introduced into the analysis. Using a value of epsilon =12 in the analysis, temperature-independent lengths of approximately 60 AA emerge from the experimental data. Such a figure is consistent with a charged centre density of approximately 1023-1024 m-3 in the material.