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Pore Wall Thinning of Mesoporous 4H‐SiC by Sacrificial Oxidation

Pore wall thinning of mesoporous 4H‐SiC by sacrificial oxidation is performed. The dimensions within the as‐etched porous SiC are reduced during dry oxidation at 1100 °C by consuming SiC and removing the grown SiO2 in the subsequent hydrofluoric acid (HF) dip step. The process reduces the average pore wall thickness from 27 nm to approximately 16 nm and reduces the thickness standard deviation from ±5 to ±1.4 nm for the investigated 9 h oxidation interval. The new pore wall thinning method will enable controlled nanoscale size reduction capability for mesoporous 4H‐SiC derived nanostructures.