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Thickness dependence of localization to the anomalous hall effect in amorphous CoFeB thin films

This study aims to investigate the quantum correction to anomalous Hall effect at low temperature in the CoFeB thin film with thickness varying from 3 to 26 nm. A robust weak localization effect of the electron conduction has been found. Results also show a dimensional crossover of electron conduction from 2D to 3D in the weak localization when the film is thicker than 8 .5 nm. The scaling relation between anomalous Hall conductance, σAH, and longitudinal conductance, σxx, for the amorphous alloys in the strongly disordered regime (σxx <; 104 S/cm) is discussed.