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MULTIFERROIC BiFeO3 FILMS: CANDIDATE FOR ROOM TEMPERATURE MICRO BIOSENSOR

ABSTRACT We formed BoFeO3 (BFO) thin films by chemical solutions deposition on Pt/Ti/SiO2/Si(100) structures and achieved low leakage current density at room temperature. The XPS spectrum confirmed that the valance state of Fe in our BFO thin films was mainly Fe3+, which is associated with low leakage current density in BFO thin films. Due to improved breakdown characteristic of the films saturated polarization hysteresis loops with remanent polarization of 75 μC/cm2 were measured at a frequencies of 20 kHz. The achieved piezoelectric coefficient d33 was approximately 60 pm/V, showing that the BFO films have potential for sensing devices and they can covert mechanical vibration energy into electrical energy, which may be utilized for micro biosensors.