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Effect of annealing and hydrogen radical treatment on the structure of solution-processed hydrogenated amorphous silicon films

We investigate the structure distribution of solution-processed (Sol. P) hydrogenated amorphous silicon (a-Si:H) films along the thickness direction and the effect of hydrogen-radical treatment (H-treatment) by Raman spectroscopy. Sol. P a-Si:H films have a stress distribution along the thickness direction, and the degree of such distribution depends on annealing temperature and duration. H-treatment affects the stress and short-range order (SRO) of a-Si:H films. The results suggest a formation mechanism for Sol. P a-Si:H films through network reconstruction and H-treatment.