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Device-Package Interaction and Gate Driver Layout Analysis in SiC MOSFET Power Modules for More Electric Aircraft Motor Drive Applications

This paper presents measurements and comparison analysis of 1200 V SiC MOSFET gate drive signals in two different integrated power solutions designed for More Electric Aircraft motor drive applications. The modules are designed to accommodate a 540 V high voltage DC bus and have a maximum output phase current of 25 A peak. Both modules comprise of typical three-phase inverter bridge configurations, with 40 mΩ MOSFETs and 20 A anti-parallel diodes. However, their gate drivers, printed circuit board layouts and substrate designs are different and the effect these elements have on the performance is presented. The results illustrate that gate resistances, package interactions and PCB layout can have a major effect on performance while variations in switching frequency, from 10 kHz to 50 kHz, and a reduction in dead-time, from 500 ns to 375 ns, have negligible impacts.