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Critical Layer Thickness of n-In0.52Al0.48As/In0.8Ga0.2As/In0.52Al0.48As Pseudomorphic Heterostructures Studied by Photoluminescence

Photoluminescence (PL) analysis on n-In0.52Al0.48As/In0.8Ga0.2As/In0.52Al0.48As/InP pseudomorphic heterostructures grown by molecular beam epitaxy has been carried out to investigate the critical layer thickness. Crystal quality degradation is followed by the relaxation of the lattice-mismatched layer. The critical layer thickness for this material system that is measured by PL is found to agree with the value from the energy balance model.