{'fraction_non_alphanumeric': 0.027338129496402876, 'fraction_numerical': 0.0, 'mean_word_length': 5.566037735849057, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Kinetics of luminescence of isoelectronic rare-earth ions in III-V semiconductors.

In this work we have developed a kinetics model of energy transfer from the host lattice to the localized core excited states of rare-earth isoelectronic structured traps (REI traps). The presence of lowlying empty core orbitals in rare-earth impurities introduces new excitation and recombination phenomena. To adequately describe the energy transfer to a REI trap, the buildup and decay kinetics of rare-earth luminescence, we consider six separate states of the REI impurity (unoccupied, electron occupied, electron occupied excited, exciton occupied, excited electron occupied, and excited exciton occupied)