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Charge-carrier transport mechanism in copper indium di-selenide thin films

Thin films of copper indium di-selenide have been grown onto glass substrates by a stacked elemental layer (SEL) deposition technique in vacuum. The elemental composition of the films was ascertained by proton-induced x-ray emission (PIXE) spectroscopy. The electrical dc conductivity and the Hall coefficient of the films have been measured in the temperature range of -130 to +127 °C. The mode of transport of the charge carriers has been analysed. It is found that a multiple scattering effect is operative in the transport process.