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Plasma vapor deposited n-indium tin oxide/p-copper indium oxide heterojunctions for optoelectronic device applications

Transparent crystalline n-indium tin oxide/p-copper indium oxide diode structures were fabricated on quartz substrates by plasma vapor deposition using radio frequency (RF) magnetron sputtering. The p–n heterojunction diodes were highly transparent in the visible region and exhibited rectifying current–voltage (I–V) characteristics with a good ideality factor. The sputter power during fabrication of the p-layer was found to have a profound effect on I–V characteristics, and the diode with the p-type layer deposited at a maximum power of 200 W exhibited the highest value of the diode ideality factor (η value) of 2.162, which suggests its potential use in optoelectronic applications. The ratio of forward current to reverse current exceeded 80 within the range of applied voltages of −1.5 to +1.5 V in all cases. The diode structure possessed an optical transmission of 60–70% in the visible region.