{'fraction_non_alphanumeric': 0.019559902200488997, 'fraction_numerical': 0.0024449877750611247, 'mean_word_length': 5.157894736842105, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Reliability Evaluation with Heat Dissipation Effect for a Ka-band MMIC PA

The circuit design and reliability evaluation for a Ka-band MMIC power amplifier (PA) based on 0.1 um GaAs pHEMT process is presented in this paper. A modified finite element analysis (FEA) method is used to explore the interconnect reliability and thermal reliability for this PA. The heat dissipation of interconnect and transistor has been considered simultaneously in this model based on the atomic flux divergence (AFD) theory. The reliability evaluation is presented accurately with the temperature distribution and AFD distribution. Thus, the weakest spot of the model can be identified. This kind of reliability evaluation method can be applied easily for other conventional ICs and provide valuable guidance for PA reliability design.