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white-light emitting diode containing InGaN quantum wells and fabrication method therefor

PURPOSE: A white light emitting diode using a quantum well structure including an InGaN active well is provided to greatly reduce a manufacturing process by not using phosphorous or high molecule material, and to increase a light emitting efficiency by using a quantum well structure. CONSTITUTION: A white light emitting diode comprises an n-type gallium nitride layer, a well, a composition of a quantum well structure having more than two elements and a p-type GaN layer. The well satisfies a chemical formula such as InxGa1-xN. The composition includes a barrier of a material selected from a group of GaN, AlGaN and InGaN satisfying a chemical formula such as InyGa1-yN. (X and y are greater than 0, and less than 1. Y is less than x)