{'fraction_non_alphanumeric': 0.050595238095238096, 'fraction_numerical': 0.030753968253968252, 'mean_word_length': 4.668539325842697, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Light-induced degradation free and high efficiency p-type indium-doped PERC solar cells on Czochralski silicon

In this paper, novel and promising high efficiency light-induced degradation (LID) free indium-doped Cz Si cells are presented. Two different commercial grade and large area B-doped Cz materials were included for comparison. Ion-implanted large area (239 and 242.22 cm2) screen printed full Al-BSF cells as well as passivated emitter rear contact (PERC) cells with oxide passivation and local aluminum back surface field were fabricated. In-doped PERC cells achieved 20.3% efficiency while the B-doped cells gave the efficiencies of 20.7% and 20.5% from low (2 Ω-cm) and high resistivity (6.2 Ω-cm) substrates, respectively. Although the initial efficiency of In-doped PERC cells was slightly lower than B-doped cells, In-doped PERC cells surpassed the low and high resistivity B-doped PERC cells by 0.5% and 0.3%, respectively, in absolute efficiency after 0.8 sun 48-hour illuminations at 37°C.