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Effect of Body Thickness on Device Performance of Graded Channel Tri-Metal Double Gate Stack Gate TFET

In this work the authors presented a 2-D analytical drain current model of graded channel tri-metal double gate (TMDG) TFET with stacked gate-oxide structure. The parabolic approximation method with suitable boundary conditions has been applied to solve Poisson’s equation of surface potential in the channel region. Therefor the tunneling generation rate is integrated over source-channel junction area to derive the drain current expression. The proposed model demonstrates the impact of graded channel as a potential barrier at the channel region to reduce leakage current in OFF state and as well as in ON state. High doping concentration at the junction of source and channel boosts up band-to-band tunneling, which reduces subthreshold slope consequently. Proper choice of work function for the gate electrodes gives better results in terms of ION/IOFF ratio and SS. The stack gate structure provides better gate control over channel region with lesser leakage current. The explanatory aftereffects of the proposed model have been approved against the TCAD reproduction information in this work.