{'fraction_non_alphanumeric': 0.047520661157024795, 'fraction_numerical': 0.012396694214876033, 'mean_word_length': 4.843373493975903, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Hole-initiated impact ionization and split-off band in Ge, Si, GaAs, InAs, and InGaAs

The significance of the energy splitting in the split-off valence band for calculations of the hole-initiated impact ionization rate has been investigated. To attain this objective, we have computed the ab-initio ionization transition rates in Ge, Si, GaAs, InAs and In/sub 0.53/Ga/sub 0.47/As by employing nonlocal and local pseudopotentials with and without spin-orbit interaction, respectively.