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Valency change of active and nonactive ions inside oxide single crystals applied in optoelectronic devices

Results of phase transition investigations of Nd:YVO4 single crystal to Nd:YVO4 single crystal in hydrogen at 1200 degrees C for 1h were presented. The refined lattice parameters obtained for the latter case, a0 equals 5.2858(1) angstrom, b0 equals 5.5956(2) angstrom and c0 equals 7.5854(2) angstrom, are slightly larger only than those of YVO3. Valency change was also investigated of Cr ions due to transition in Cr4+:Y3Al5O12 and Cr3+:SrLaGa3O7 Ho and Pr ions in LiTaO3 and Co3+ due to transition in LaGaO3 single crystals under influence of annealing in reducing and oxidizing atmospheres and gamma and proton irradiations.