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Ultrafast Growth of Large‐Area Uniform, Millimeter‐Size MoSe2 Single Crystals on Low‐Cost Soda‐Lime Glass

2D semiconducting transition metal dichalcogenides (TMDCs) have emerged as essential building blocks for engineering next‐generation integrated electronics. To achieve this, the controllable synthesis of monolayer TMDCs with high crystal quality, low cost, and high yield is crucial, while it remains challenging. Herein, the direct synthesis of large‐area uniform, millimeter‐size monolayer MoSe2 single crystals on a 6‐centimeter‐long soda‐lime glass template, by using a designed “beam‐bridge” assisted metal oxide precursor feeding strategy via chemical vapor deposition (CVD), is reported. Notably, several tenths of millimeter‐scale, triangular‐shaped monolayer MoSe2 single crystals are obtained in one batch within 25 s’ growth, affording so far the fastest growth rate (≈50 µm s−1). This ultrafast growth behavior is proposed to be mediated by the sufficient, homogeneous release of Mo‐based precursor, the catalytic property of sodium atoms on soda‐lime glass substrate, as well as the improved surface kinetics on the molten glass surface. Moreover, the thickness‐controlled growth from monolayer to bilayers is also realized. This work provides brand new insights for the batch production of large single‐crystal TMDCs, which should propel its practical applications in versatile fields.