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Efficiency of junction termination techniques vs. oxide trapped charges

Numerous techniques have been used to improve the voltage handling capability of high voltage and power devices with the aim of obtaining ideal breakdown of a plane junction. Oxide and interface trapped charges, which could be generated during the technological fabrication process itself or by ionizing radiations, have a strong influence on the voltage handling capability of high voltage discrete switches as well as on High Voltage Integrated Circuits, HVIC's. The aim of this research is to quantitatively investigate, both by numerical simulations and experiment, the evolution of the voltage handling capability versus oxide charges for different junction termination techniques, namely the Biased Ring, the SIPOS, the spiral SIPOS and Junction Termination Extension.