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Optical and transport properties of Ni-doped MoS2

In this paper, undoped and Ni-doped MoS2 crystal layers were fabricated by chemical vapor transport method. Two direct band edge transitions of excitons at 1.9 and 2.1 eV were observed for both samples by optical reflectance measurement. Hall effect measurements were carried out to analyze the transport behavior of carriers in undoped and Ni-doped MoS2, which indicate that the Ni-doped MoS2 sample is n-type and has a higher resistance and lower mobility than the undoped MoS2 sample has. Photoconductivity was performed which shows Ni-doped MoS2 has higher photocurrent than undoped MoS2. Meanwhile, an additional Ni doping level at 1.2 eV was observed in Ni-doped MoS2. According to a series of experimental results, this result indicates that the Ni dopants could improve their applications in light responsibility for solar cells and photo detectors.