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CMOS integrated cantilevers with sub-µm tips for surface temperature measurement

This work presents CMOS micromachined dielectric cantilevers with integrated sharp tips for surface temperature measurement. The integrated cantilever can perform electrothermal actuation and piezoresistive sensing for maintaining a proper tip–sample contact. For a cantilever 280 µm long, the measured thermoelectric power from the aluminum/polysilicon thermocouple is 22.6 ± 0.36 µV °C−1, the measured time constant is 796 µs, and the drift due to thermal actuation is 0.15 ± 0.057 µV °C−1. The measured displacement by thermal actuation is 2.2 µm at 17.8 mW and the measured thermal time constant is 79.6 µs. The measured piezoresistive sensitivity and pre-amp noise are 0.48 mV µm−1 and 0.7 µV Hz−1/2, respectively, producing an equivalent input-referred noise displacement of 1.45 nm Hz−1/2.