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Compact modeling of multiple-gate MOSFETs

This paper reviews recent development on compact modeling of multiple-gate MOSFETs. Starting with a core model based on the analytic potential solutions for the highly symmetric double-gate (DG) and surrounding-gate (SG) MOSFETs, an explicit solution to the implicit algebraic equations with high accuracy has been developed. With the addition of quantum, short-channel effects, and capacitance formulations, the core model for DG MOSFETs has been expanded into a full-blown compact model which has subsequently been calibrated and validated by FinFET hardware. In view of the various types of experimental multiple-gate MOSFETs developed, the DG and SG MOSFET models have been generalized to other less symmetric structures, including quadruple-gate, triple-gate, Omega-gate, and Pi-gate devices. Finally, research activities in other groups on multiple-gate MOSFETs are briefly summarized.