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Analyses of delta-doped emitter bipolar transistor

In this article, the theoretical model of delta-doped emitter bipolar transistor that included the effect of bandgap shrinkage is presented. The recombination in emitter set-back layer is also considered. We also present the calculated results for the current gain as a function of barrier height, barrier width, and emitter set-back layer thickness. The experimental results of the device are also given.