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Dynamic Load Modulated Low-Voltage GaN PA Using Novel Low-Loss GaN Varactors

This paper gives a first presentation of a dynamic load modulated (DLM) power amplifier (PA) employing novel AlGaN/GaN varactors. With an AlGaN/GaN HEMT this enables the highest operating frequency ever presented for a varactor-based GaN DLM PA. Despite the low drain-source voltage of 10 V, making the PA suitable for mobile applications, it shows a high drain efficiency of 61 % at a maximum output power of 24 dBm. At 6 dB output power back-off the PA still reaches 45 % efficiency. The achieved results demonstrate the promising potential of AlGaN/GaN varactors, and show the usability of AlGaN/GaN HEMT at low voltages.