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Challenges and Opportunities with Highly Brilliant X-ray Sources for multi-Modal in-Situ and Operando Characterization of Solar Cells

Today’s photovoltaics market is dominated by single-junction solar cells with a crystalline silicon (c-Si) absorber. Higher efficiencies can be achieved in tandem junction devices, with a thin top cell converting the high-energy part of the solar spectrum in a wide-bandgap absorber, and a bottom c-Si cell converting the low-energy part of the spectrum [1]. Alternatively, lower manufacturing costs can be achieved for polycrystalline solar cells based on direct bandgap absorbers such as Cu(In,Ga)Se2. In both cases, the research focus lies on the development of cost-effective, high-efficiency thin-film (TF) solar cells with polycrystalline absorbers, including CdTe, Cu(In,Ga)Se2, III/V semiconductors and metal-halide perovskites such as the archetypical methyl-ammonium lead iodide (MAPI).