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Raman investigation of layered ZrGeTe4 semiconductor

This work presents a systematic study of phonon modes in a ZrGeTe4 layered semiconductor by Raman spectroscopy. Ten Raman characteristic peaks were detected and determined by density functional perturbation theory calculations. All Raman mode shifts exhibit a linear temperature dependence. The first-order temperature coefficients (χ) of the ZrGeTe4 Raman mode are in the range of −0.0058 cm−1/K to −0.01831 cm−1/K. Moreover, we demonstrate the strong anisotropic Raman response for linearly polarized excitation. The intensities of the observed Raman modes show periodic variation with the sample rotating under the angle-dependent and polarized Raman spectroscopy measurements, showing the high anisotropy of ZrGeTe4. Our results prove that ZrGeTe4 is a highly in-plane anisotropic 2D semiconductor, suggesting its potential application in nanoelectronic devices.This work presents a systematic study of phonon modes in a ZrGeTe4 layered semiconductor by Raman spectroscopy. Ten Raman characteristic peaks were detected and determined by density functional perturbation theory calculations. All Raman mode shifts exhibit a linear temperature dependence. The first-order temperature coefficients (χ) of the ZrGeTe4 Raman mode are in the range of −0.0058 cm−1/K to −0.01831 cm−1/K. Moreover, we demonstrate the strong anisotropic Raman response for linearly polarized excitation. The intensities of the observed Raman modes show periodic variation with the sample rotating under the angle-dependent and polarized Raman spectroscopy measurements, showing the high anisotropy of ZrGeTe4. Our results prove that ZrGeTe4 is a highly in-plane anisotropic 2D semiconductor, suggesting its potential application in nanoelectronic devices.