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Design of a Multilayer Broadband Switchable Absorber Based on Semiconductor Switch

A broadband switchable absorber from S-band to C-band is presented in this letter. The proposed structure is composed of three layers separated by air gap. From top to bottom, the layers of double split rings with lumped resistors, cut metal wires connected with p-i-n diodes and ground, are integrated to realize broadband absorption, switching feasibility, and independent polarization. For demonstration, the proposed absorber is investigated using a circuit analogy method, and the distributions of the surface current are also discussed in detail to analyze the mechanism of broadband absorption. Numerical calculations are carried out to investigate the specific performance and experiments are conducted to validate the design furthermore.