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Low‐Temperature Growth of SiO2 Films by Plasma‐Enhanced Atomic Layer Deposition

Silicon dioxide (SiO2) films prepared by plasma‐enhanced atomic‐layer deposition were successfully grown at temperatures of 100 to 250 °C, showing self‐limiting characteristics. The growth rate decreases with an increasing deposition temperature. The relative dielectric constants of SiO2 films are ranged from 4.5 to 7.7 with the decrease of growth temperature. A SiO2 film grown at 250 °C exhibits a much lower leakage current than that grown at 100°C due to its high film density and the fact that it contains deeper electron traps.