{'fraction_non_alphanumeric': 0.028678304239401497, 'fraction_numerical': 0.03117206982543641, 'mean_word_length': 4.389261744966443, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Design, fabrication and characterization of compact 4-bit RF MEMS capacitor bank in standard CMOS 0.35μm process

This paper reports on the design and fabrication of a 4-bit switched capacitor bank designed to operate over the frequency range of 3–10 GHz with a tuning range of up to 10:1. An optimized mask-less CMOS post-processing technique is used to fabricate the 0.6 mm × 0.9 mm capacitor bank. We propose a procedure employing dry etching with cryogenic cooling to tune the residual stress in the beams. The capacitor is analyzed both theoretically and experimentally. The analysis of the measured value ∼ 5 of Q suggests an approach to enhance the capacitor's Q. The measurement demonstrates the 16 different states covering the range of 0.15–1.2 pF with no sign of self-resonance up to 10 GHz.