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Material Properties of Sipos Films Prepared by XeCl Excimer Laser Annealing of a-Si:N x Films

The material properties of laser-annealed a-Si:Nx films were investigated. The a-Si:N x films for laser-annealing were deposited by rf plasma enhanced chemical vapor deposition (PECVD) with NH 3 and SiH 4 gas mixtures. At the 0.35 of NH 3 /SiH 4 ratio, the optical band-gap was abruptly increased to 2.82 eV from 2.05 eV by laser-annealing which indicates that Si-N bonding comes to be notable at that ratio. The electrical conductivity showed the maximum value of 4× 10 -6 S/cm at the 0.11 of NH 3 /SiH 4 ratio where the grain growth and the increase of Si-N bonding are optimized for the enhancement of electrical conductivity. The σ P /σ D ratio which is related to the defects states for photo generation centers was decreased with increasing NH 3/SiH 4 ratio. Our experimental data showed that the optical band gap and electrical conductivity of laserannealed a-Si:N x films were dominantly affected by the NH 3 /SiH 4 ratio at the 250 mJ/cm 2 of laser-annealing energy density.