{'fraction_non_alphanumeric': 0.034482758620689655, 'fraction_numerical': 0.009852216748768473, 'mean_word_length': 5.1, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Dynamical identification of a threshold instability in Si-doped heterofullerenes.

We rationalize the origins of a threshold instability and the mechanism of finite temperature fragmentation in highly Si-doped C(60-m)Si(m) heterofullerenes via a first-principles approach. Cage disruption is driven by enhanced fluctuations of the most internal Si atoms. These are located within fully segregated Si regions neighboring the C-populated part of the cage. The predominance of inner Si atoms over those involved in Si-C bonds marks the transition from thermally stable to unstable C(60-m)Si(m) systems at m = 20.