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Random Telegraph Noise in Advanced Self-Aligned Bipolar Transistors

In studies of the degradation effect in advanced self-aligned bipolar transistors, we observe random telegraph noise (RTN). This phenomenon closely resembles that in metal-oxide-semiconductor field-effect transistors (MOSFETs), but the temperature and voltage dependences are different. Based on tunneling transitions between a single border trap, Si–SiO2 interface states and the Si-band structure, a model is suggested to explain this RTN in advanced self-aligned bipolar transistors. The analysis of the complicated voltage and temperature dependences of the capture/emission time and the amplitude of the RTN affords a unique opportunity to study the nature of defects and the occupation kinetics of an individual trap in SiO2. This study of the RTN also directly provides information about the microscopic origin of hot carrier degradation and low-frequency noise.