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Electron magneto-tunneling through single self-assembled InAs quantum dashes

We have investigated electron magneto-tunneling through single self-assembled InAs quantum dashes (QDHs) coupled to metal nanogap electrodes. The samples operate as single electron transistors and exhibit clear shell structures, reflecting the anisotropic shape of the QDHs. In high magnetic fields, the samples exhibit strongly orbital-dependent large diamagnetic shifts and large electron g-factors in the range |g| ∼ 3–11. The strong level-to-level fluctuation of the g-factors implies the presence of strong spin–orbit interaction in this system. These properties suggest that InAs QDHs are promising for the manipulation of single-electron orbital/spin states by external electric/magnetic fields.