{'fraction_non_alphanumeric': 0.0326530612244898, 'fraction_numerical': 0.025510204081632654, 'mean_word_length': 5.169811320754717, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Design and Fabrication of S0 Lamb-Wave Thin-Film Lithium Niobate Micromechanical Resonators

Commercial markets desire integrated multifrequency band-select duplexer and diplexer filters with a wide fractional bandwidth and steep roll-off to satisfy the ever-increasing demand for spectrum. In this paper, we discuss the fabrication and design of lithium niobate (LN) thin-film S0 Lamb-wave resonators on a piezoelectric-on-piezoelectric platform. Filters using these resonators have the potential to fulfill all the above requirements. In particular, we demonstrated one-port high-order S0 Lamb-wave resonators with resonant frequencies from ~400 MHz to ~1 GHz on a black rotated y-136 cut LN thin film. The effective electromechanical coupling factor (k2eff ) ranges from 7% to 12%, while the measured quality factor ranges from 600 to 3300. The highest k2eff × Q achieved on this chip is 194, significantly surpassing contour mode resonators manufactured in other technologies.