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DC baseband and high-frequency characteristics of a silicon nanowire field effect transistor circuit

Silicon-based nanowire field effect transistors (FETs) are potentially next-generation candidates for achieving high-performance targets of the International Roadmap for Semiconductors due to their superior reduction of the short-channel effects and excellent compatibility with planar complementary metal oxide semiconductor (CMOS) fabrication process. In this work, we for the first time numerically explore the dc baseband and high-frequency characteristics, and the design of the device aspect ratio (channel length/channel thickness) for the silicon nanowire FET circuits by using a three-dimensional device/circuit-coupled mixed-mode simulation technique. With the experimentally validated simulation approach, the result shows the rather prolific dc baseband and high-frequency properties of silicon-based nanowire FET devices as active components. In design of silicon nanowire FETs, taking the nanowire's radius and channel length as two crucial factors, the demands of the device aspect ratio on dc characteristics are found to be inversely proportional to the demands of the high-frequency characteristics. Therefore, to compromise both the dc and high-frequency characteristics, the design margin of the device aspect ratio restricted, in which the requirements of dc and high-frequency characteristics provide aspect ratio upper and lower bounds, respectively. Moreover, the design margin will be more tightened for a device with larger radius due to the weakened channel controllability. The extensive results and analyses are presented for the promising devices for the design of high-frequency analog applications.