{'fraction_non_alphanumeric': 0.01714898177920686, 'fraction_numerical': 0.0021436227224008574, 'mean_word_length': 5.768115942028985, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Energy-dispersive x-ray spectrum simulation and emprical observation of 22nm node high-k metal gate structure

Characterization of advanced technology node integrated circuits is an ever-increasing challenge. In order for analytical capabilities to keep pace with technology it is important to carefully consider all aspects in the design and execution of experiments. It is essential to be able to distinguish artifact from meaningful data and to recognize the limitations as well as the capabilities of a given technique. Some critical considerations include specimen preparation, physical limitations of the instrumentation, alignment and calibration as well as user selected acquisition parameters. The effects of sampling size, signal to noise ratio, specimen geometry, instrumentation and accelerating voltage on the microanalysis of multilayered metal gate structures created using atomic layer deposition (ALD) are presented.