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A detailed study of self‐assembled (Al,Ga)InP quantum dots grown by molecular beam epitaxy

We report on the structural and optical properties of self‐assembled (Al,Ga)InP quantum dots (QDs) with varying material composition embedded in a (Al0.30Ga0.70)0.51In0.49P matrix. The samples were grown by gas‐source molecular beam epitaxy. Atomic force microscopy was used to study the structural properties of the quantum dots, revealing a strong dependence of the morphology on the material composition. Low‐temperature ensemble photoluminescence was observed between 590 nm and 720 nm. Temperature and excitation power dependent, as well as time resolved measurements were performed, indicating a significantly reduced electron confinement and a reduced overlap of the electron/hole wavefunctions for Al‐ and/or Ga‐rich compositions.