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Submicron MILC TFT performance enhancement by crystallization after patterning

The performances of thin-film-transistors (TFTs) with the channel region crystallized by metal-induced-lateral-crystallization (MILC) before and after patterning are compared. TFTs are experimentally fabricated to study current drive, off-state leakage current, subthreshold slope, threshold voltage, and drain induced barrier lower (DIBL). The superiorities of TFTs with channel crystallized after patterning over the ones with channel crystallized before patterning are demonstrated. The advantage can be further enhanced by using the ladder layout.