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Combinatorial approach to the interface structure characterizations of SrTiO3 on Si(100)

Interface structures of SrTiO 3 /Si were investigated systematically using combinatorial method with growth temperature gradient in pulse laser deposition and cross sectional high resolution transmission electron microscopy . A combinatorial pulse laser deposition with growth temperature gradient system was employed to grow SrTiO 3 on Si (100) with various temperatures and oxygen pressures. A high throughput thin foil fabrication system, which is so called micro sampling system, was employed to fabricate thin foils for cross sectional high resolution transmission electron microscope observation. As a result, we have observed a never reported amorphized SrTiO 3 layer in the crystalline SrTiO 3 thin films grown on Si (100) at growth temperatures above 600°C. From the growth condition dependence studies on the formation of amorphized SrTiO 3 layers and the electron energy loss spectroscopy measurements, the origin of the amorphization was concluded as an effect of diffusion of Si from substrate. This is the first observation of a diffusion induced amorphization phenomenon in the crystalline SrTiO 3 thin films grown on Si (100). Our results show that at higher growth temperatures, the interface structures of SrTiO 3 /Si are dominated by the diffusion of Si from the Si substrates.