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X-ray reflectivity spectra of ultrathin films and nanometric multilayers: Experiment and simulation

Amorphous silicon–nitrogen (a–Si 1− x N x :H) alloys, thin films, and multilayers deposited by ultrahigh-vacuum plasma-enhanced chemical vapor deposition were studied and modeled by x-ray reflectivity (XRR) measurements. The analysis of XRR data obtained from the single-layer samples allowed us to calculate the density, thickness, and interface roughness of each layer. To check the deposition parameters, the deviation ( t nom – t exp )/( t nom ) of the measured thickness t exp from the nominal thickness t nom was evaluated. Based on these results, a simulation of a multilayer film, obtained by deposition alternating stoichiometric and substoichimetric layers was carried out. It is shown that the best fitting is obtained by introducing into the XRR calculation a thickness distribution with a standard deviation related to the deviation ( t nom – t exp )/( t nom ) estimated for the single layers.