{'fraction_non_alphanumeric': 0.032138442521631644, 'fraction_numerical': 0.004944375772558714, 'mean_word_length': 5.090225563909774, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Proposal of novel InGaAsP/InP multi-mode interference photonic switches

We propose novel InGaAsP/InP semiconductor photonic switches using multi-mode interference (MIPS). Switching functions are controlled by changing the refractive indices of the index-modulated regions which are located at the center of the multi-mode waveguide. It is predicted from the calculations by FD-TD (finite difference time domain) method that these devices can operate in various kinds of output schemes, with device sizes of about 8 /spl mu/m wide and 540 /spl mu/m long. The characteristics can be improved by optimizing cladding index and/or index-modulated region's width. We fabricated the InGaAsP/InP MIPS with partial current injection regions, and preliminary transmission properties with no index change were observed.