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Non-quasi-static modeling of heterojunction bipolar transistors

A review of the different techniques of nonquasi-static (NQS) modeling of heterojunction bipolar transistors (HBTs) is presented. NQS modeling techniques can be divided into two categories: (a) physical models that are based on Gummel-Poon model and (b) empirical models that depend on parameter extractions. The nature of these models and their advantages and disadvantages are discussed in this paper.