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Evaluation of Radiation Damage on Electrical Characteristics of SiO2 due to Reactive Ion Etching

Electrical characteristics of SiO2 are degraded due to reactive ion etching (RIE) radiation damage. We prepared metal-oxide-semiconductor (MOS) diode samples with plasma-exposed SiO2 film. Degradation of MOS diode characteristics was examined under several plasma conditions. Initial C-V measurement and B-T aging test show the RF power dependence of the radiation damage. The Vth shift increases with RF power. The Vth shift depends not on the plasma exposure time, but on the residual oxide thickness after plasma exposure. According to I-V measurement, trapped negative charge density increases with increasing RF power. The depth of the trapped charge centroid is proportional to Vdc1/2. Neutral and charged traps are generated in SiO2 due to ion bombardment.