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Simulation of Transient Enhanced Diffusion of Boron Induced by Silicon Self-Implantation

The time and dose dependence of boron transient enhanced diffusion (TED) induced by silicon self-implantation has been simulated taking into account the time evolution of self-interstitial clusters. The kinetics of cluster dissolution and growth are combined with the kick-out mechanism for boron diffusion, and the decrease in the cluster evolution rate with time is taken into account. Using a unified set of parameters, the simulation explains some complex characteristics of TED; that is, the enhancement is independent of the implant dose at short annealing times, while it increases with increasing implant dose after longer annealing times.