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Metalorganic Molecular-Beam Epitaxial Growth and Characterization of GaAs Using Trimethyl- and Triethyl-Gallium Sources

The metalorganic molecular-bean epitaxial (MOMBE) growth of GaAs using trimethylgallium and triethylgallium has been studied. The results of introducing hydrogen into the system are also descrived. Introducing ionized hydrogen into the TMG-As4 system reduced the carrier concentration from 1×1020 cm-3 to 1×1018 cm-3. Using TEG as a Ga source, epitaxial layers grown at temperatures below 580°C showed n-type conduction and a carrier concentration of about 1×1017 cm-3, while those grown at higher temperatures showed p-type conduction.