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Bandwidth enhancement techniques for transimpedance amplifier in CMOS technologies

This paper describes the design of a wide band CMOS transimpedance amplifier (TIA) for optical receiver application. Implemented in a 0.35-µm digital CMOS process, this amplifier can achieve a transimpedance gain of 54.5dBΩ with 2.5GHz -3 dB bandwidth while dissipating 7.5mA from a 3V supply. Bandwidth extension is achieved by inductive peaking and Gm enhancement techniques. The core circuit of the TIA occupies a chip area of 45 µm × 55 µm only.