{'fraction_non_alphanumeric': 0.029513888888888888, 'fraction_numerical': 0.0, 'mean_word_length': 5.556818181818182, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
InP-based Resonant Tunnelnig Diode/HEMT Integrated Circuits for Ultrahigh-Speed Operation

The RTDs feature strong nonlinear I–V characteristics exhibiting negative differential resistance as well as an extremely high operation frequency. This paper discusses the RTD/HEMT integration circuits and their applications based on our recent results. In addition to this, a novel integration technology, called fluidic self-assembly (FSA), for integration of III-V RTDs on other substrate, is also described. This technique is promising for expanding the applicability of the RTDs.