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Study of Terminated Species on 4H-SiC (0001) Surfaces Planarized by Catalyst-Referred Etching

Our group has developed a novel abrasive-free planarization technique known as catalyst-referred etching (CARE). It can produce flat, undamaged, and smooth SiC surfaces with a root-mean-square roughness of less than 0.1 nm over a whole wafer. This study investigates the etching mechanism of CARE by performing X-ray photoelectron spectroscopy (XPS) measurements to determine the termination species of CARE-processed SiC surfaces. We compared XPS spectra of a CARE-processed surface with those of an as-received SiC surface that had been treated with 50% HF solution. XPS spectra of the CARE-processed wafer contain the F 1s core level, whereas those of an as-received SiC wafer surface did not. This indicates that F anions play an important role in the etching process of CARE.