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New 1200 V MOSFET structure on SOI with SIPOS shielding layer

In this paper, we have experimentally obtained, for the first time, 1200 V lateral diodes and MOSFETs on SOI. The SOI structure is characterized by a SIPOS layer inserted between the silicon layer and the buried oxide. It was found that the new SOI diode breakdown voltage is determined by the conventional bulk p-n junction theory and not by the resurf (reduced surface field) principle.