{'fraction_non_alphanumeric': 0.013850415512465374, 'fraction_numerical': 0.0, 'mean_word_length': 5.07563025210084, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Effect of the conditions during photostimulated epitaxy on the structure of the resulting films

A study has been made of how electromagnetic radiation influences the growth of epitaxial structures. Experiments on the growth of IV–VI films used a high-power xenon flashlamp and pulsed and cw UV lasers. The conditions which result in the growth of nonplanar film structures were determined. An experimental study was made of the properties of indium-doped films, including the transition layer between the film and the substrate and film peeling processes. A model for processes at the crystallization surface is examined. The kinetics of defects must be taken into consideration in an analysis of photostimulated epitaxy.