{'fraction_non_alphanumeric': 0.02442002442002442, 'fraction_numerical': 0.001221001221001221, 'mean_word_length': 5.833333333333333, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
A rigorous analytical model for short-channel junctionless double-gate MOSFETs

Inspired by the Green function theory, a physics-based short-channel electrostatic potential model for junctionless double-gate MOSFETs was proposed based on method of series expansion and method of undetermined coefficients to solve the Poisson's equation. Threshold voltage model and subthreshold slope model were derived from the developed electrostatic potential model, respectively. Device parameters and bias conditions, including doping concentration, channel thickness, gate length, gate oxide, drain voltage and gate voltage were considered. Results of the analytical models agreed well with numerical solutions from a 3-D simulator. These models may help us investigate the physical mechanism of junctionless double-gate MOSFETs.