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Bias dependent dual band response from InAs∕Ga(In)Sb type II strain layer superlattice detectors

We report on the multispectral properties of infrared photodetectors based on type II InAs∕Ga(In)Sb strain layer superlattices using an nBn heterostructure design. The optical and electrical properties of the midwave and long wave infrared (MWIR-LWIR) absorbing layers are characterized using spectral response and current-voltage measurements, respectively. The dual band response is achieved by changing the polarity of applied bias. The spectral response shows a significant change in the LWIR to MWIR ratio within a very small bias range (∼100mV), making it compatible with commercially available readout integrated circuits.