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Hole Injection from Schottky Gate in Ion-Implanted GaAs Integrated Circuits

Measurements of currents for a GaAs metal-semiconductor field-effect transistor (MESFET) when a negative bias was applied to a nearby ohmic contact (sidegate) showed that significant hole injection from the gate occurs for large negative sidegate voltages. This is in agreement with a proposed model, in which the presence of an inversion layer under the Schottky gate due to the pinning of the Fermi level at the channel surface causes hole injection into the channel when the gate is positively biased with respect to the sidegate. Upon increasing negative sidegate voltage the substrate-channel depletion region is expanded, and consequently, the neutral region of the channel is shrunk. This results in more holes being injected into the substrate from the gate.