{'fraction_non_alphanumeric': 0.034482758620689655, 'fraction_numerical': 0.029310344827586206, 'mean_word_length': 4.8686868686868685, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Effect of a TiO2 Buffer Layer on the C–V Properties of Pt/PbTiO 3/TiO 2/Si Structure

Metal/ferroelectric/insulator/semiconductor (MFIS) capacitors were prepared by depositing PbTiO3 and TiO2 layers on Si(100) wafers at 450 and 550°C using metal organic chemical vapor deposition (MOCVD). The C–V properties of the capacitors depend on the quality of TiO2 films and TiO2/Si interfaces. The TiO2 film could serve as an effective buffer layer against the Pb diffusion and provide good C–V properties as long as it was deposited at proper substrate temperature with proper thickness.