{'fraction_non_alphanumeric': 0.028029678483099753, 'fraction_numerical': 0.004122011541632316, 'mean_word_length': 5.290155440414508, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Magnetoresistance of conductive filament in Ni/HfO2/Pt resistive switching memory

Ferromagnetic conductive filaments (CFs) were formed in a conductive-bridge random access memory (CBRAM) with a Ni electrode using high current compliances during a set process. We investigated CFs in a Ni/HfO2/Pt CBRAM using the current compliance dependences of the set process, low-temperature characteristics, and anisotropic magnetoresistance (AMR). Set processes occurred when a positive bias was applied to the Ni electrode only; therefore, the switching phenomena showed polarity. The resistance of the ON state (low resistance state) was dependent on the current compliance between 2 and 5 mA. The ON state of the device showed a metallic conduction property, suggested by the temperature dependence of resistance. When a high current compliance (5 mA) was used for programming, the ON state showed AMR, which was direct evidence of ferromagnetic CF formation. This suggests that the formation of a ferromagnetic CF is associated with the accumulation of Ni ions that diffused from the Ni electrode. The OFF-state (high resistance state) resistance slightly increased with decreasing temperature and AMR was not observed.