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Enhanced Voc in InAs quantum-dot Based p-i-n solar cells using a non-alternating strain-balancing epitaxial growth method

A newly devised misfit management method was used to deftly balance the lattice strain in an InAs quantum dot (QD) based In0.15Ga0.85As p-i-n device. The photovoltaic behavior under AM0 conditions exhibited higher Voc and lower Jsc in the QD-based device as compared to a control p-n device without quantum dots. To our knowledge, both of these observations are new and seemingly conflict with some of the current understanding of quantum-dot-based PV device physics. The PV behavior under infrared illumination confirms that the quantum-confined carriers of the InAs islands in the intrinsic region contribute to the photocurrent.