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Photoinduced Degradation of Photoluminescence in Polysilane Films

The photoinduced degradation of photoluminescence (PL) from the σ*-σ transition in polysilane films with thickness greater than the penetration depth of excitation light has been investigated. The PL intensity decays by the power law, the exponent of which changes when the transmittance of the films begins to increase significantly. We explain the first decay in terms of an interaction of excitons with trapped carriers. The trapped carriers result from free charged carriers which are photogenerated and diffuse into the bulk with decreasing their number by the Auger process. The second decay corresponds to a decrease in the absorption of the excitation light.