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Spatially resolved contact‐resistance measurements on crystalline silicon solar cells

This paper demonstrates a method for quantitatively determining the spatially resolved contact resistance of silicon solar cells. Contact‐resistance maps obtained by this technique on screen‐printed industrial silicon solar cells are presented and discussed. Extending the contact‐resistance map to a series‐resistance map by adding contributions from the rear, bulk, emitter, and metallization shows this map to qualitatively agree well with photoluminescence (PL) series‐resistance imaging. Compared to existing approaches, our technique enables the spatially resolved measurement of the contact resistance separately from any other series‐resistance contributions.