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Fabrication of Vanadium Oxide Film with Low Phase Transition Temperature by Magnetron Sputtering and Reduction Post-Anneal Method

Vanadium oxide thin films were deposited on ordinary glass substrates by direct current (DC) magnetron sputtering from a vanadium metal target and subsequent reduction annealing. The deposition and annealing parameters were given in detail. The samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM). The phase transition of the film was observed by measuring its resistance-temperature (R-T) characteristic curve. The results indicated that the film fabricated had a semiconductor-metal phase transition temperature of about 52°C, which is 16°C lower than the common phase transition temperature of vanadium dioxide film.