{'fraction_non_alphanumeric': 0.015789473684210527, 'fraction_numerical': 0.0, 'mean_word_length': 5.215686274509804, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Gallium nitride transistor on glass using epoxy mediated substrate transfer technology

Low cost high-power electronics era has begun with the fabrication of Gallium Nitride (GaN) based High Electron Mobility Transistors (HEMTs) on Silicon substrates. Silicon is however not an optimum material from the viewpoint of the final substrate. Having GaN based devices on other substrates would enable better performing RF and high-power devices. Here we report the process development of the transfer technology, of a fabricated GaN HEMT transistors to a glass wafer using temporary bonding material. Epoxy has been used to finally bond the GaN stack and the glass wafer. Transfer and output characteristics of the HEMT and the capacitance measurements of the capacitors were performed on the identical devices before and after the transfer process. Also, to understand the stress before and after the transfer process Raman measurements were carried out.