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X-band Absorber Integrated with A Low-frequency Transmission Performance

The design of an X-band absorber with a low-frequency transmission window is proposed. The structure is composed of an absorbing layer and a bandpass layer separated by dielectric substrates. The absorbing layer consisting of indium tin oxide film in the shape of square rings and the bandpass layer is a modified Jerusalem cross structured slot-type metallic patch. The proposed absorber is simulated and fabricated. Both fullwave simulation and measurement results show that the designed absorber exhibits a broadband absorption over the entire X-band frequency range with a transparency window in S-band under wide incidence angle. The proposed structure presents a promising prospect in novel absorber applications.