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Effect of substrate orientation on band structure of bulk III-V semiconductors

We present a detailed theory of the effects of crystal orientation on the properties of semiconductors. Our formalism allows us to study arbitrary crystallographic orientations of various compound semiconductors within any band model and crystal symmetry. For an illustration of its applicability, we present here results (band structure and effective masses) for only a few higher symmetry substrate orientations and concentrate on bulk cubic systems for materials such as GaInPAs/GaAs, GaInPAs/InP, GaInAsSb/GaSb, and GaInAsSb/InAs. Such cases were not discussed before.