{'fraction_non_alphanumeric': 0.038896746817538894, 'fraction_numerical': 0.01768033946251768, 'mean_word_length': 5.261061946902655, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Ambipolar Channel p‐TMD/n‐Ga2O3 Junction Field Effect Transistors and High Speed Photo‐sensing in TMD Channel

Highly crystalline 2D/3D‐mixed p‐transition metal dichalcogenide (TMD)/n‐Ga2O3 heterojunction devices are fabricated by mechanical exfoliation of each p‐ and n‐type material. N‐type β‐Ga2O3 and p‐type TMD separately play as a channel for junction field effect transistors (JFETs) with each type of carriers as well as materials for a heterojunction PN diode. The work thus mainly focuses on such ambipolar channel transistors with two different types of channel in a single device architecture. For more extended applications, the transparency of high energy band gap β‐Ga2O3 (Eg ≈ 4.8 eV) is taken advantage of, firstly to measure the electrical energy gap of p‐TMDs receiving visible or near infrared (NIR) photons through the β‐Ga2O3. Next, the p‐TMD/n‐Ga2O3 JFETs are put to high speed photo‐sensing which is achieved from the p‐TMD channel under reverse bias voltages on n‐Ga2O3. The photo‐switching cutoff frequency appears to be ≈16 and 29 kHz for visible red and NIR illuminations, respectively, on the basis of −3 dB photoelectric power loss. Such a high switching speed of the JFET is attributed to the fast transport of photo‐carriers in TMD channels. The 2D/3D‐mixed ambipolar channel JFETs and their photo‐sensing applications are regarded novel, promising, and practically easy to achieve.