{'fraction_non_alphanumeric': 0.01327433628318584, 'fraction_numerical': 0.0, 'mean_word_length': 5.661764705882353, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Electro-thermal investigations on silicon inverters operating at low frequency

This paper presents methods for determining power loss profiles of Si-IGBT-based inverters and the induced junction temperature. Power losses were decomposed into different waveforms in order to investigate their influence on the junction temperature of the IGBT. Junction temperature has been determined by a dynamic thermal model using the transmission matrix technique.