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Studying precipitation and dissolution of iron in multicrystalline silicon wafers during annealing

In this paper we study the changes in iron concentrations and distributions in multicrystalline silicon (mc-Si) wafers after annealing in the temperature range of 600-900 o C. The dissolved Fe distributions across mc-Si wafers are obtained by photoluminescence imaging taken before and after dissociation of FeB pairs. The results show that the precipitation of dissolved Fe, both near the grain boundaries and at the in-grain precipitation sites, requires a high level of supersaturation. Dissolution of precipitated Fe in the close vicinity of the grain boundaries is observed for wafers annealed at high temperatures where the solubility limit exceeds the concentration of dissolved Fe already present in the mc-Si wafer.