{'fraction_non_alphanumeric': 0.020654044750430294, 'fraction_numerical': 0.0034423407917383822, 'mean_word_length': 5.258064516129032, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Analysis of the impact of linewidth variation on low-k dielectric breakdown

Low-k time-dependent dielectric breakdown (TDDB) has been found to vary as a function of metal linewidth, when the distance between the lines is constant. Modeling requires determining the relationship between TDDB and layout geometries. Therefore, comb test structures have been designed and implemented that vary pattern density and linewidth independently in 45nm technology. Models are computed to estimate TDDB as a function of linewidth, and the cause of variation in TDDB behavior is investigated.