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Are the interaction effects responsible for the temperature and magnetic field dependent conductivity in Si‐MOSFETs?

We compare the temperature and in‐plane magnetic field dependences of resistivity ρ (T, B∥) of Si MOSFETs with the recent theories. In the comparison we use the effective mass m* and g*‐factor determined independently. An anomalous increase of ρ with temperature, which has been considered a signature of the “metallic” state, for high conductivities (σ > e2/h) can be described quantitatively by the interaction effects in the ballistic regime. ρ(B∥) is consistent with the theory only qualitatively; it is found to be more susceptible than ρ(T) to details of disorder, possibly associated with magnetic moments of localized states. Description of the transport in the “critical” regime of ρ ∼ h/e2 is still lacking. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)