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A New Bipolar Transistor-GAT

A new type of transistor capable for high voltage and high speed switching operations was proposed and its primary characteristics were examined. This transistor has additional projected bases which act like the gates in a field effect transistor, and is named “Gate Associated Transistor” (GAT). At the “Off” condition, the gates shield electrostatically the active base region of the GAT. The shielding effect of the gates makes it possible for the GAT to achieve a high collector voltage (VCE) with a thin base width which would cause a punch-through in a conventional transistor. The GAT fabricated for applications at high voltage and high speed attained a cut-off frequency (fT) of 80 MHz, a collector voltage (VCEO) of 500 V, and a collector current (IC) of 10 A. The high cut-off frequency of the transistor with VCEO of 500 V has resulted from the thin base width.