{'fraction_non_alphanumeric': 0.026859504132231406, 'fraction_numerical': 0.006198347107438017, 'mean_word_length': 5.729166666666667, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Characterization of hydrogen contained in passivated poly‐Si and microcrystalline‐Si by ERDA technique

Polycrystalline Si (poly‐Si) thin films produced by atmospheric pressure chemical vapour deposition (APCVD) were treated by hydrogen passivation in the remote plasma system. Such materials could be potentially used for photovoltaics applications. The purpose of the present study was to investigate the effects of hydrogen passivation on poly‐Si thin film properties, such as hall mobility and photoluminescence. Elastic recoil detection analysis (ERDA) was used to determine the depth distribution and concentration of hydrogen. ERDA was also applied to determine the hydrogen content of amorphous/microcrystalline silicon produced by plasma enhanced chemical vapour deposition (PECVD) with various dilution ratios of the working gases (H2 and SiH4). A dependence of the hydrogen content on the crystallinity was observed. Copyright © 2006 John Wiley & Sons, Ltd.