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Simulation of X-Ray Mask Repair by Means of FIB-Technology

The angular dependence of the sputter yield of a 100 keV gallium FIB (focused ion beam) on gold was determined by evaluating the sufficient ion dose for complete removal of a 0.8 µm thick electroplated gold layer. For two angles of incidence (0°, 45°), the redeposition characteristics of sputtered gold particles were measured. They can be approximated by a cos2 function. With these data included, simulations of FIB-processes were carried out, both concerning the structuring of III-V compounds and the repair of opaque defects in X-ray masks. By parameter variation in the simulations, the sticking coefficient of sputtered gold particles was found to be µ=0.5±0.1.