{'fraction_non_alphanumeric': 0.04, 'fraction_numerical': 0.03891891891891892, 'mean_word_length': 4.447058823529412, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Over 1 W record-peak-power operation of a 338 nm AlGaN multiple-quantum-well laser diode on a GaN substrate

We have demonstrated the high-peak-power operation of an AlGaN-based ultraviolet laser diode (UV-LD) with a lasing wavelength of 338.6 nm. The UV-LD structure was fabricated on a bulk GaN(0001) substrate. The broad-area and vertical conductive structure of the UV-LD, whose ridge width and cavity length were 50 and 600 µm, respectively, was employed. The threshold current density and differential external quantum efficiency were estimated to be 38.9 kA/cm2 and 8.5%, respectively. The characteristic temperature of threshold current was estimated to be 119 K, and the temperature dependence of lasing wavelength was obtained to be 0.033 nm K−1. A peak power of over 1 W has been achieved in 338.6 nm under pulsed operation at room temperature, which is the highest peak power ever obtained for AlGaN-based UV-LDs.