{'fraction_non_alphanumeric': 0.02471169686985173, 'fraction_numerical': 0.006589785831960461, 'mean_word_length': 5.333333333333333, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Self-aligned 40-nm channel carbon nanotube field-effect transistors with subthreshold swings down to 70 mV/decade

Much progress has been made in recent years in the fabrication and understanding of the operations of Single-walled carbon nanotube (SWNT) field effect transistors (FETs). Nevertheless, it remains a challenge to develop highly scaled device structures for nanotube transistors and push to the performance limit of these molecular materials. The purpose of this work is to fabricate highly scaled SWNT field effect transistors (FETs) and approach the performance limit of carbon nanotube FETs.