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Formation and analysis of the specific features of the electronic structure of an array of Ge/ZnSe nanoscale heterostructures

This paper describes a method for forming an array of Ge/ZnSe nanoheterostructures by vacuum thermal evaporation. ZnSe and Ge layers were deposited on an anodic aluminum oxide surface with a pore diameter of 24 nm. Scanning electron microscopy showed that nanoheterostructures are formed in the pore channels. The features of the electron structure of the samples obtained were investigated by x-ray photoelectron spectroscopy and optic absorption spectroscopy. These investigations showed that the band gap of germanium increases. Also, there is a significant increase in valence band discontinuity (to 3.6 eV). Thus, we obtained Ge/ZnSe heterostructures with non-overlapping band gaps or broken-gap heterostructures.