{'fraction_non_alphanumeric': 0.0326530612244898, 'fraction_numerical': 0.00816326530612245, 'mean_word_length': 4.841269841269841, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Maskless Deposition of Au on GaAs by Low-Energy Focused Ion Beam

Direct deposition of Au films on GaAs substrate was performed using low-energy focused ion beam (FIB) irradiation. Pure Au film was obtained and current-voltage (I–V) characteristics of the Au/GaAs contacts were measured. The degradation of I–V characteristics compared to those of Au/GaAs contacts formed by evaporated Au was observed even for deposition at an energy of 50 eV due to ion-irradiation-induced damage. The I–V characteristics were somewhat improved by annealing at 200°C for 1 min. As an example of application, a Au gate was formed on a GaAs/AlGaAs heterostructure using low-energy FIB direct deposition, and current control capability was demonstrated.