{'fraction_non_alphanumeric': 0.023508137432188065, 'fraction_numerical': 0.0, 'mean_word_length': 5.674698795180723, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Numerical simulation on the dependence of carrier transport characteristics on the thickness of the absorbing layer for GaAs-based blocked impurity band (BIB) terahertz detectors

The dependence of carrier transport characteristics on the thickness of the absorbing layer for Gallium Arsenide (GaAs) blocked-impurity-band (BIB) terahertz detector has been investigated in detail. It is found that responsivity linearly increases with the increased thickness of absorbing layer first, and after achieving a peak value, and then starts to dropping slowly.