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Automated TEM metrology characterization of Si devices

New material and design implementations in the semiconductor industry have drastically increased the number of critical dimensions that need to be measured in a transistor with high accuracy and precision, and it is likely that alternate techniques for obtaining metrology data from these advanced semiconductor device structures may be required. TEM-based dimensional metrology (CD-TEM) on advanced semiconductor gate structures is one possible candidate. We have shown TEM-based dimensional metrology provides good repeatability and robustness.