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A study of fin width effect on the performance of FinFET

As short channel effect (SCE) and subthreshold leakage is demonstrated to be controlled effectively from conventional planar MOSFETs to the FinFET, we used a three-dimensional simulation of nFinFET structure to analysis fin width effect on the FinFET performance from perspectives of both on-state and off-state. In this study, the major leakage path of FinFET with varied Wfin takes place at middle fin where is controlled by double-gate, in the meanwhile, on-state current density is not uniform within active fin and a higher current density is observed at fin top. FinFET with increasing Wfin induces more on-state current and also Isub reduction because of impact ionization is suppressed. In order to enjoy both on-state and off-state advantages, the FinFET with wide Wfin at fin top and thin Wfin at middle fin/fin bottom is proposed for desired effective fin area and electrostatic control.