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Control over the process of laser annealing of semiconductors

A laser method of segregation of impurities or interstitial mercury atoms (IMA) in solid phase of Hg0.8Cd0.2Te (MCT) is presented. A theoretical model for this process also has been proposed. Equation for diffusion of impurities or IMA was completed by a term describing the influence of phonon flux on diffusion processes. Computer simulations of the laser annealing process point out possibilities of obtaining a sharp maximum of Hg concentration for appropriately chosen parameters of laser pulse. This was experimentally verified with MCT specimens annealed by a YAG:Nd3+ laser.