{'fraction_non_alphanumeric': 0.008714596949891068, 'fraction_numerical': 0.0, 'mean_word_length': 5.47887323943662, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Study of the improvement of the AuGeNi ohmic contacts to n-GaAs

The results of the comparative analysis of the AuGeNi ohmic contacts parameters received by the different methods of deposition are presented, the opportunity of improvement of the contactspsila parameters by introduction diffusion barrier in the structure of metallization is shown, and also influence of sulphidic treatment of GaAs surface on characteristics of the ohmic contacts is studied.