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Recent progress with in-situ monitoring of mercury cadmium telluride (MCT) growth

Recent progress for in situ monitoring of MCT growth is reviewed with particular reference to the need for improved control and reproducibility of the vapor phase growth methods. RHEED continues to be the main in situ monitor for MBE growth, giving both surface structure and growth rate data. However, this is now becoming supplemented by optical in situ monitors such as ellipsometry and new techniques for measuring the substrate temperature which critically affects the growth quality on the preferred (211)B substrate orientation. The lack of in situ monitoring techniques is no longer a disadvantage for MOVPE with reflection difference spectroscopy and surface photo-adsorption spectroscopy for surface characterization and spectroscopic ellipsometry and reflectometry for layer characterization. Organometallic concentration monitoring has been achieved using Epison ultrasonic monitors and has proved to be a vital part of the growth system monitoring to control critical parameters such as VI/II ratio. Recent results on feedback control of both IMP and direct alloy growth show that improved control is now possible in the complex MOVPE growth environment.