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Theoretical investigation of properties of InAsSb mid-wave infrared detectors

In this work we present the theoretical investigation of the electrical and optical properties of high operating temperature (HOT) mid-wavelength infrared detectors (5 μm at 230 K) based on InAsSb/AlSb heterostructures [1]. In this work the performance comparison of barrier detectors with different doping concentration of n-type absorbing layer is presented. The barrier structure was simulated by commercially available software APSYS. We report on the dependence of the calculated current responsivity on the active layer thickness for a different doping concentration and doping concentration for optimal absorber thickness. Moreover, we show the influence of the bottom contact material on device’s performance.