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GaN-Based Metal–Insulator–Semiconductor Ultraviolet Photodetectors with HfO2 Insulators

Nitride-based metal–insulator–semiconductor (MIS) ultraviolet (UV) photodetectors (PDs) with a hafnium oxide (HfO2) insulating layer was fabricated for the first time and characterized successfully. It was found that we can achieve a small dark current and a large photocurrent to dark current contrast ratio using the proposed device with the HfO2 insulating layer. Furthermore, the noise equivalent power was substantially reduced, and detectivity was increased using HfO2 insulators.