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Preparation and properties of electroless deposited NiP, NiWP as barrier layer on p-type Si

In this study, we used electroless deposition of NiP, NiWP on p-type Si as the barrier layer to prevent the diffusion of Cu into Si. We added different amount of W into the layer, wt% is 11.89% (NiWP-1) and 25.36% (NiWP-2). After annealed at various temperatures, thermal stability of the Si/Ni(W)P/Cu layers were evaluated by measuring the changes of resistance of the samples, using four-point probe method. XRD was applied to detect the formation of Cu3Si, which symbolizes Cu has diffused into Si, to evaluate the barrier performance of the layers. The results of XRD of the stacked Si/NiP/Cu, Si/NiWP-1/Cu, Si/NiWP-2/Cu films reveal that Cu atom could diffuse through NiP barrier layer at 450 °C, Cu could diffuse through NiWP-1 layer at 550 °C, while Cu could hardly diffuse through NiWP-2 layer. This means that with W added in the layer, the barrier performance is improved. Although the resistance of Si/NiWP-1 and Si/NiWP-2 are higher than that of Si/NiP, the resistance of stacked layers of Si/NiWP-1/Cu and Si/NiWP-2/Cu are close to that of Si/NiP/Cu. This means that using NiWP as barrier layer is acceptable.