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Mechanical Property Characterization of Boron-Doped Silicon by Berkovich-Type Indenter

The “true-hardness” of (100) single-crystal silicon has been measured as a function of boron doping concentration by nanoindentation with a pointed diamond indenter (Berkovich triangular pyramid). The boron-ion implanted silicon wafers in which the boron concentration is varied up to 2.0×1020 cm-3 are studied. The results reveal an increase in the hardness at high boron concentrations, and a hardness ratio of 1.5:1 between the heavily and lightly boron-doped silicon has been obtained.