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Development of a Full 3D NEGF Nano-CMOS Simulator

We describe the development of a new fully 3D NEGF simulator. At this stage we illustrate the use of the corresponding 3D NEGF solver to study, non-self consistently, the effect of the spatial inhomogeneities caused by stray charges and rough Si/SiO2 interface in nano-CMOS devices. These cannot be accurately described using perturbative techniques. The use of decoupled simulations is justifiable in the subthreshold region of device operation. In the presence of the above imperfections the current and charge density have a distinct 3D character