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New precision alignment methodology for CMOS wafer bonding

A new precision alignment methodology suitable for distorted CMOS wafer bonding is proposed. Using multiaxis-interferometer and load-cell measurements with in situ fine stage-position adjustment combined with newly designed wafer holders, two wafers are flattened and aligned precisely. The alignment capability is 250 nm or better without any damage to low-k materials, making the methodology suitable for future 3D integration.