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Characterization of 650 V Enhancement-mode GaN HEMT at Cryogenic Temperatures

In order to evaluate the feasibility of newly developed GaN devices in a cryogenic-cooled converter, this paper characterizes a 650 V enhancement-mode Gallium-Nitride heterojunction field-effect transistor (GaN HFET) at cryogenic temperatures. The characterization includes two parts: static and dynamic characterization. The results show that this GaN HEMT is an excellent device candidate to be applied in cryogenic-cooled applications. For example, transconductance at cryogenic temperature is 2.5 times of one at room temperature, and accordingly, peak di/dt during turn-on transients at cryogenic temperature is around 2 times of that at room temperature. Moreover, the on-resistance of the channel at cryogenic temperature is only one-fifth of that at room temperature.