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Self-Heating Suppressed Structure of a-IGZO Thin-Film Transistor

Self-heating degradation in semiconductor devices generated by driving voltage is a serious problem in the development of highly reliable products. This letter focuses on oxide semiconductors, as a representative of flexible devices on which thermal accumulation on the substrate is critical. We propose a heat-suppressing thin-film transistor (TFT) structure to improve the reliability of transparent amorphous oxide semiconductor TFTs. Findings from this letter indicate that a structure with a curved line, such as a Corbino disk, is effective for suppressing self-heating. Based on these results, we suggest a U-shaped TFT as a heat-suppressing structure and demonstrate its device simulation and thermal analysis.