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Difference between the Face Up and Face to Face Methods in AsH3 Capless Annealing of LEC-GaAs

In order to determine why the AsH3 capless annealing of ion implanted GaAs does not necessarily yield good reproducibility, conductive LEC-GaAs was annealed in AsH3/H2 flow with face up and face to face configurations. The surface carrier and EL2 concentrations decreased extensively when the wafer was annealed in the face up configuration, whereas they did not decrease for the face to face configuration. We found that a deep acceptor level, called HL2 or LPE-B, was introduced at the surface when the wafer was annealed in the face up configuration, even if a sufficient amount of As partial pressure was supplied. The introduction of this hole trap was more enhanced for an annealing in H2 than in Ar.