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Electrical Properties of Gallium Arsenide-Insulator Interface

Gallium arsenide-insulator interface properties were investigated from an analysis of conventional characteristics of MIS structures. Energy distributions of interface state density were U shape having minimum values near the mid-gap energy. The values of minimum density were dependent upon conduction types of substrates and deposition conditions of insulator films but independent of crystal orientations. They were from 0.9 to 20×1011 cm-2 eV-1 for p-type substrate and from 1 to 4×1012 cm-2 eV-1 for n-type substrate. An anomalous frequency dispersion of capacitance was observed in the accumulation region on n-type substrate and was explained by deep traps formed by oxygen atoms doped during oxide film deposition.N-channel GaAs-MISFET's were fabricated and the maximum field effect mobility of electron in the inversion layer was 1480 cm2 V-1 sec-1.