{'fraction_non_alphanumeric': 0.03361344537815126, 'fraction_numerical': 0.013445378151260505, 'mean_word_length': 4.96, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Determination of the Electrical Capture Process of the EH6-Center in n-Type 4H-SiC

Deep Level Transient Spectroscopy (DLTS) investigations at different temperatures and with various filling pulse lengths were performed on n-type 4H-SiC epitaxial layers using Iridium Schottky contacts to determine the electrical capture process of the EH6-center. The temperature dependence of the electrical capture cross section σ ~ T-2.0 suggests a cascade capture process, which is not thermally activated. Together with earlier work by Zippelius et al. [4] this proves the acceptor-type of the EH6-center.