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Room-temperature ferromagnetism and terahertz emission of Mn-doped InGaAs and GaAsSb nanowires

Ferromagnetic Mn-doped In0.05Ga0.95As and GaAs0.95Sb0.05 nanowires were synthesized by chemical vapor transport and their Mn concentration was about 2%. The Mn doped homogeneously into both the single-crystalline zinc blende InGaAs and GaAsSb without the formation of metal clusters. X-ray magnetic circular dichroism and magnetic moment measurements revealed their distinctive room-temperature ferromagnetic behaviors. While the incorporation of In enhances the ferromagnetism, that of Sb reduces it, which can be ascribed to the increase or decrease of the dopant–acceptor hybridization. These GaAs-based NWs exhibit an efficient terahertz emission at room temperature, due to a strong local field enhancement by coherent surface plasmons. The Mn doping significantly enhances the intensity and bandwidth of the terahertz emission, with an excellent correlation with their magnetization.