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Output Characteristics of a Dual-Wavelength Semiconductor Laser Beam in Master-Oscillator Power-Amplifier Configuration

Two single-frequency laser beams at 852 nm were injected into a semiconductor tapered amplifier to generate a dual-wavelength laser beam. When the frequency difference δ between the two injection beams was less than ∼2 GHz, several sidebands appeared in the output due to the beating of the two injection frequencies. The efficiency of sideband generation was measured as a function of injection power. The total output power was measured as a function of δ. We showed that the loss of the total output power, which is always accompanied by sideband generation, is one of the noteworthy characteristics of the dual-wavelength beam in a master-oscillator power-amplifier configuration.