{'fraction_non_alphanumeric': 0.022813688212927757, 'fraction_numerical': 0.0, 'mean_word_length': 5.475409836065574, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Experimental study of iron redistribution between bulk defects and boron doped layer in silicon wafers

We have studied iron distribution between a boron‐implanted (p+) layer and bulk defects in single crystalline silicon wafers after various gettering anneals. Our results show that iron accumulation into the p+ layer was pronounced after each anneal. However, we were able to decrease the strong accumulation by combining a specific low‐high anneal with high bulk defect density. We determined the dominant mechanism behind the accumulation of iron into the p+ layer, which turned out to be precipitation instead of segregation. The results can be helpful when choosing the internal gettering steps for both microelectronic (IC) and multicrystalline silicon photovoltaic (PV) processes.