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P‐20: Post‐Annealing and Passivations of Transparent Bottom Gate IGZO Thin Film Transistors

We have examined post‐annealing and passivation for the transparent bottom gate IGZO TFT having an inverse co‐planar structure. The oxygen‐vacuum two step annealing enhanced the field effect mobility up to 18 cm2/Vs and the sub‐threshold swing down to 0.2 V/dec. However, the hysterysis and the bias stability problems could not be solved just by post‐annealing. Thus, we have passivated the bottom gate IGZO TFTs with organic and inorganic materials. Ga2O3, Al2O3, SiO2 and some polymer materials were effective materials for passivations. The hysterysis and the stability of the TFTs were remarkably improved by the passivations.