{'fraction_non_alphanumeric': 0.03254437869822485, 'fraction_numerical': 0.0014792899408284023, 'mean_word_length': 4.708860759493671, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Carbon-Based Liner for RESET Current Reduction in Self-Heating Phase- Change Memory Cells

The use of carbon-based (C-based) liners is investigated for RESET current reduction in self-heating, pillar-shaped phase-change memory (PCM) cells for storage class memory (SCM) technologies. The liner is inserted between the top electrode and the phase-change layer. A finite element analysis (FEA) is done to simulate the effect of this liner on the RESET current, using the melting current as a proxy. From this FEA, we see that the high resistance of the C-based liner increases the heat generation at the interface with the phase-change layer, changing the cell from being solely self-heated by the phase-change layer to a combination of the phase-change layer’s self-heating and heating from the C-based liner. The simulation results are validated against experimental results from fabricated pillar cells. We show the liner reduces the melting current of the pillar cell by 60%. The effect of the thickness of the C-based liner and the phase-change layer on the melting current is quantified, showing a strong dependence on the liner thickness and a weak dependence on the phase-change layer thickness. These findings can guide the design of PCM cells with high-resistance liners between the electrode and phase-change layer for RESET current reduction.