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10 kbit Bubble Memory Chip: Design and Fabrication

A 10 kbit magnetic bubble memory chip was designed and fabricated with a 6 µm bubble material. The chip was designed using a major-minor organization with new elements. The chips were operated in sufficient bias margin at 100 kHz, 40 Oe drive field. From analysis of detector output, it was shown that the serpentine detector could be designed from the collapse field and the mobility of a garnet film. 256 chips were fabricated using dry processing technique and the yield of 37.9% was obtained. From analysis of these results a 3 µm bubble 80 kbit chip was designed and the process yield at a reasonable level is expected.