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Structural and electrical properties of Al doped ZnO thin film grown on different substrates

In this paper the evolution of microstructures and its impact in Al-ZnO as deposited thin film on different substrates such as Si, SiO2, Polyimide, Glass by using DC sputtering at 400W in presence of argon flow 30 sccm are investigated. The XRD of the films suggests that the deposited films are polycrystalline hexagonal wurtzite Al-ZnO. The Hall Measurement data reveals no more change in the carrier concentration and mobility. The resistivity is nearly equal for all the samples. Surface morphology of the films by SEM suggests agglomerated grain with distinct grain boundaries in the film deposited on SiO2 substrate.