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BOX layer formation by oxygen precipitation at implantation damage of light ions

We have developed a novel SOI fabrication technique in which light ions such as H/sup -/ and He/sup -/ are implanted into a Si substrate (instead of O/sup i/mplantation in the SIMOX process). The atmospheric oxygen atoms precipitate at the implantation damage during annealing in an oxidized atmosphere. A continuous BOX layer was successfully formed in the Si substrate by choosing appropriate conditions - slow ramping rate and high oxygen concentration in the atmosphere.