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Defect Clusters and Simple Defect Build-Up Kinetics in Fast-Neutron Irradiated n-Si

Floating-zone and pulled, phosphorus-doped n-Si samples with ϱ = (10 to 40) Ωcm are investigated after irradiation with various doses of fast-pile neutrons. The equation which connects dose, concentration, and temperature dependence of carrier removal rate by defect clusters in the frame of Gossick's model is derived. The new method and an expression for determination of average cluster radius are presented. It is found that fast-pile neutrons introduce defect clusters in pulled n-Si with average radius ≈ 70 A and in floating-zone n-Si ≈ 90 A. Simple defect build-up kinetics in fast-pile neutron irradiated n-Si is calculated. 
 
 
 
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