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High Speed Six-Transistor Static Random Access Memory Cells Using Single Grain Thin Film Transistors Fabricated at Low Temperature Process

In this paper we will report successfully fabricated six transistor static random access memory (6T SRAM) cells using single-grain thin film transistors (TFTs). SRAM cells have been designed by analytical calculations and verified by DC and transient simulations. TFTs are fabricated by µ-Czochralski process that consists of making grain filter and Excimer laser crystallization at temperatures below 550 °C. The gate length of transistors are 2 µm. Fabricated SRAM cells based on single grain TFTs, show good read and write static noise margin (SNM and WNM) equal to 0.55 and 0.75 V at 3.3 V power supply, respectively. Finally, excellent read and write access times equal to 13 and 8 ns in 87 MHz worldline frequency were obtained.