{'fraction_non_alphanumeric': 0.03042328042328042, 'fraction_numerical': 0.0013227513227513227, 'mean_word_length': 4.960629921259843, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Study of behavior of p-gate in Power GaN under positive voltage

In this paper, we report a detailed experimental forward gate stress in GaN-based power High Electron Mobility Transistors (HEMTs) with a p-type gate, controlled by a Schottky metal/p-GaN junction. The devices characterization widely covers different temperatures range studying the gate and drain leakage currents behavior. Moreover, two-dimensional (2D) Technology Computer Aided design (T-CAD) simulations are performed to investigate the main physical phenomena involved in p-GaN HEMT. From simulations results it is possible to notice that when a high stress voltage is applied on the gate, a high electric field occurs in the depletion region of the p-GaN close to the metal interface.