{'fraction_non_alphanumeric': 0.02261904761904762, 'fraction_numerical': 0.007142857142857143, 'mean_word_length': 5.782258064516129, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Relation of empty surface states to Schottky barriers on semiconductors

Photoemission spectroscopy techniques for measuring occupied and unoccupied semiconductor surface states will be described, including a new yield spectroscopy technique for measuring empty surface states both on clean surfaces and in the presence of a thin metal overlayer (i.e. metal-semiconductor interface). Recent results will be discussed which show that, in general, intrinsic semiconductor surface states (whose energy positions are not simply related to band gap energies) play an important role in determining schottky barrier energies on cleaved (110) 111-V semiconductors. In several cases, these intrinsic semiconductor surface states appear to be largely unaffected by metal overlayers, while in other cases metal-surface state interactions are observed.