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Grain-Oriented Ceramics in Bismuth Layer-Structure Compounds for Capacitor Material

The systematic investigation of the composition of high-permittivity bismuth layer-structure oxides and the examination of the grain-oriented ceramics were carried out. Through investigation of the composition of high-permittivity materials, it was clarified that the dielectric constant ε s of more than 1000 can be attained using Pb4Bi4Ti7O24 compound. Moreover, it was confirmed that favorable characteristics for use as dielectric ceramics for high-voltage capacitors (stability of ε s on DC bias, high resistivity, etc.) can be attained using this compound. The examination of the characteristics of grain-oriented Pb4Bi4Ti7O24 ceramics clarified that the dielectric breakdown strength and the stability of ε s on DC bias can be improved in the direction perpendicular to the polarization axis. As a result, grain-oriented ceramics are considered to be appropriate for use as capacitor materials.