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Tunneling Spectroscopic Studies of Metal-Insulator-Amorphous GeTe Junction

The I-V and G-V characteristics of an Al-Al2O3-Amorphous GeTe film are studied through tunneling spectroscopy. The conductance is expressed as G=G0+An(V-Vbi)n at room temperature, where G0 is a constant, n∼1.7, 2.4 and 3.1 and Vbi=Vbf (0.24 V) and =Vbr (0.14 V) forward and reverse biases, respectively. The energy gap (mobility gap) of amorphous GeTe is obtained by analyzing the tunnel data on the assumption that the band bending effects are small. The obtained energy gap (0.76 eV) is nearly consistent with the value obtained by electrical resistivity (0.70 eV) or that by optical absorption measurement (0.71 eV). It is also ascertained experimentally that the increase in the conductance well width at liquid nitrogen temperature is due to the high series resistance of the amorphous GeTe film.