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FIB Dual-Beam Sample Preparation for TEM Observation

Etching of integrated circuits using Focus ion beam (FIB) produces samples for Transmission Electron Microscopy (TEM) observation. Such a sample preparation is compatible with the objective of imaging circuits having different density area. An area composed with very heavy atoms imposes a larger diffraction of the TEM electrons and the beam intensity is locally lowered. This kind of TEM image is currently made after normal FIB sample preparation. This FIB sample preparation procedure uses an ion beam moving quickly in one direction and very slowly in the perpendicular direction. By measuring the etching rate at various ion beam current according to this procedure, it has been found that the relation between depth, speed and beam current is not simple. Fortunately, this procedure gives a sample with some usable thickness and a TEM analysis is quite possible. Most of the time, the image can be interpreted and the sample preparation is acceptable. This TEM imaging method is largely used to image transistors or connections in integrated circuits.