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Planar-type InAs-coupled three-terminal superconducting devices

This paper reports the development of a planar-type field-effect three-terminal superconducting device. The device consists of an InAs-coupled Josephson junction having an MIS-type gate configuration. Using p-type InAs as the substrate and fabricating SiO film on the surface native inversion layer as the gate insulator, both the supercurrent and the normal resistance of the device are controlled by a gate voltage of several volts. The device characteristics showed a good agreement with the calculation.