{'fraction_non_alphanumeric': 0.03501945525291829, 'fraction_numerical': 0.017509727626459144, 'mean_word_length': 4.502673796791444, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Epitaxial growth of high-quality ZnSSe on ZnSSe/In/glass substrate

We have studied the metal–organic vapour phase epitaxy growth of ZnSSe on a ZnSSe/In/glass substrate. The ZnSSe/GaAs wafer was glued on an indium/glass substrate. Mechanical polishing and the etching solution of NaOH(1M):H2O2 (30%) = 4:1 was used for the removal of the GaAs substrate. The deterioration of the photoluminescence after etching is related to the surface defects originally existing at the interface of ZnSSe/GaAs and the roughening of the surface. The enhancement of the photoluminescence after surface trimming is due to the smoothness of the surface and due to the reflection of the indium mirror. The ratio of near-band emission to broad-band emission becomes higher after the regrowth of the ZnSSe epilayer on ZnSSe/In/glass substrate at 220 °C. The near-band emission was observed at 438 nm with a full width at half-maximum of 26.6 meV at 77 K. This means that a high-quality ZnSSe epilayer can be obtained on the ZnSSe/In/glass substrate.