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Quantum heterostructures based on GaAs nanomembranes for photonic applications

III-V nanostructures are promising building blocks for future optoelectronics applications. In order to exploit the unique properties of the III-V nanostructures such as high carrier mobility, high spin-orbit interaction and optimum band-gap for various applications one needs to be able to grow nanostructures with high crystallinity and desired dimensions and configurations.