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Self-formed In(Ga)As quantum dot lasers

The atom-like density of states in quantum dots (QDs) associated with strong confinement of electrons and holes is expected to improve the performance of semiconductor lasers. Self-organization techniques in MBE and MOVPE have exploited a way to form QD structure with high density, high uniformity and high emission efficiency. Lasing via QDs has been already achieved by recent intensive works on self-organized QD structures. The performance of QD lasers is now reaching the well-established quantum well lasers, and further progress is expected in the near future. In this paper, we describe our recent progress on self-formed InGaAs QD lasers.