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Investigations on Photon Energy Response of RadFET Using Monte Carlo Simulations

We describe investigations of RadFET energy response simulated with Geant4 and FLUKA2005 Monte Carlo codes. An analysis of energy deposition is carried out for photon irradiation with energies between 35 keV and 2 MeV. The absorbed dose in the silicon dioxide layer (few hundred nanometers) is compared for both transport codes.