{'fraction_non_alphanumeric': 0.023142509135200974, 'fraction_numerical': 0.001218026796589525, 'mean_word_length': 5.2272727272727275, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Ultrasonic waves in a piezoelectric semiconductor quantum plasma: the gain analysis

We examined the amplification of ultrasonic waves in a GaAs solid state plasma. We used a set of quantum fluid equations to investigate the effects of plasma components quantum recoil, exchange-correlation forces, and quantum pressure of plasma carriers. Characteristic parameters of doped n-GaAs, p-GaAs, and n-p-GaAs semiconductors are used to evaluate the ultrasonic gain applying the dispersion relations and their modifications. It is found that the frequency of ultrasonic waves can be impressed by exchange-correlation potential, and the gain has a sensitivity to variation of density n0, wave frequency ω, and drift velocity. The results reveal the propagation of ultrasonic waves via a GaAs plasma reduces the gain coefficient.