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Simulation study on temprature dependence of MOSFET and TFET-based pH-sensitive ISFET

The temperature dependence of MOSFET and TFET-based pH sensitive ISFET was investigated through TCAD device simulation. The transfer characteristics and the pH sensitivities of both devices at various temperature were compared. TFET-based ISFET exhibits superior thermal stability in contrast with the MOSFET-based ISFET due to the difference of conduction mechanism.