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Properties of GZO thin film deposited at various positions in the plasma plume in PLD method

Ga-doped ZnO (GZO) thin films were prepared by pulsed laser deposition (PLD) method on a large substrate at room temperature in vacuum. Two regions of apparently different optical transmittance were found in the deposited area, and their properties such as thickness, sheet resistance, optical and electrical properties and composition ratio were measured. The transparent region has low sheet resistance and high carrier density and mobility, while the black region has high sheet resistance and low carrier density and mobility. From XPS measurements it was found that the difference of the film properties results from the difference of oxygen content in the film. This seems to result in the spatial distribution of plasma parameters in the directional plume produced by the asymmetric laser beam.