{'fraction_non_alphanumeric': 0.02009273570324575, 'fraction_numerical': 0.0061823802163833074, 'mean_word_length': 6.1208791208791204, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Germanium nanostructure on Si(100) surface grown by RF Magnetron Sputtering technique

Germanium (Ge) and Silicon nanostructure (NS) among many others semiconductor nanosystems received special attention due to the possibility in optoelectronics application [1]. The visible luminescence from Ge nanoparticles and nanocrystallites has generated interest due to the feasibility of tuning band gap by controlling the sizes. However, controlling the light emitting behavior require careful fabrication of such nanostructure. This research is targeted to fulfill this perspective by providing an efficient and easy fabrication method using sputtering.