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Infrared reflection polarizers using uniform and diffuse low-index layers buried in high-index substrates

The extinction ratio ER and the reflectance, or throughput, for the unextinguished s polarization Rs are calculated for infrared reflection polarizers that consist of a low- index transparent layer embedded in a high-index transparent substrate. Iso-ER and iso-Rs contours illustrate the dependence of the ER and Rs for a specific IR polarizer on the depth and width of a buried layer of SiO2 in Si at 3.5-micrometers wavelength and 80 degree(s) angle of incidence. Both cases of a uniform layer with sharp boundaries and a diffuse Gaussian layer are considered. The diffuse-layer model employs Bruggeman's effective medium theory and is intended to simulate devices that are fabricated by the oxygen-ion implantation of Si. The angular and wavelength sensitivities of these polarizers are determined.