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Scanning Electron Beam Annealing of P-Ion-Implanted Si(100) and (111) Substrates

The crystalline quality and electrical properties of P-ion-implanted Si(100) and (111) substrates subjected to scanning electron beam annealing are presented. The electrical properties of the implanted layers were measured as functions of the electron beam power, the implantation dose and energy, and the substrate orientations. The properties were then compared with the crystalline quality of the layers, which was measured by Rutherford backscattering and channeling spectroscopy, and transmission electron microscopy. It was found that the electrical activity in Si(100) substrates is almost 100% at doses around 1×1015 cm-2, but that in Si(111) substrates, the implanted layer does not grow epitaxially up to the surface. Instead, part of the layer becomes polycrystalline in the same dose region. It was also found that a two-step process consisting of low-temperature furnace annealing and subsequent electron-beam annealing effectively activates implanted P atoms in Si(111) substrates without redistributing the atoms.