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Modulation of transport properties of optimally doped La1.85Sr0.15CuO4 thin films via electric field modification of the grain boundaries

Modulation of the transport properties of a superconducting La1.85Sr0.15CuO4‐based ionic‐liquid gated transistor has been achieved. For an applied gate bias Vg ≥ 2 V, the characteristic sheet resistivity vs. temperature (Rs–T) curves exhibit a fully reversible foot feature below the superconducting transition temperature (Tc). In contrast to the behaviour expected from the large charge carrier density of this high‐Tc superconductor material, the normal state conductance above Tc also exhibits a large modulation, indicating a larger charge screening length than that predicted from a simple Thomas–Fermi model. We regard these changes as due to electrostatic modification of the charge density at structural imperfections such as grain boundaries present within the sample. Such modification alters the coupling between superconducting domains and dictates the overall Rs–T trend of the gated film. To explain our findings, we employ Mannhart's model of electronic band bending at the grain boundaries and propose that this band bending can be modulated by large electric fields resulting in the observed modulation of the transport properties of the device.