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The simulation of resonant tunneling devices containing InAs quantum dots

A resonant tunneling devices (RTDs) model containing InAs quantum dots (QDs) is discussed in this paper. The current-voltage characteristics of this model at different simulation temperature are investigated. Each I-V curve have two tunneling peak and the tunneling current increasing along with the decline of temperature. To illustrate QDs can capture charges and store charges, two different structures are compared. Peak current of structure without QDs' peak current is larger than structure with QDs. We simulate the photoluminescence (PL) of InAs QDs, and we also compare some methods which can reduce the operating current.