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Impact of Asymmetricity in Gate Oxide on the RF Performance of FDSOI MOSFET

This paper presents the impact of asymmetricity in the double gate oxide material on the Radio Frequency (RF) performance of the single FDSOI MOSFET. The results are obtained by using 2D Atlas TCAD tool. From the simulated results it is observed that the cutoff frequency (IT) which is used as a key parameter to evaluate the High frequency performance of the device is smaller when the asymmetricity is near the source side and larger when the asymmetricity is near the drain side.