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Complex nanostructured silicon wire

Growth of silicon nanoobjects integrated to silicon based electronic circuits is of great importance for nano-, opto-electronics as well microsensorics. In this work, self-organizing technology has been used to grow silicon wires of complex structure on silicon substrate. To characterize the wires different high-resolution instruments (Hitachi SEM S806, CM 200 UT Philips) have been used. It was found that a morphology and crystalline structure of the wires are controlled by growth conditions. In general, the wires consist of a c-Si core and a Si-based envelope. A thickness of the core ranges between 50 to 500 nm, while a thickness of the envelope changes from few to few hundreds of nanometers. Morphology of the envelope is very sensitive to the growth conditions. Depending on the conditions it consists of amorphous or nanoporous silicon or silicon quasi-crystal. Nanopores in porous envelope have semi-spherical shape, and their sizes range between 0.4 to 20 nm. Nanopores are ordered into a superlattice or in a layered heterostructure with separating amorphous layers. Phenomena of the wire growth and possible applications of the wires grown on silicon substrate (as field transistors, electron- or light-emitters and chemical sensors) are discussed.