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Photoluminescent Intensity from Porous Silicon Depends on Current Density during Anodization

We fabricated porous silicon samples under various conditions of current density and anodization time, and investigated the photoluminescent intensity systematically. When anodization time was fixed, positive correlation was observed between current density and photoluminescent intensity. On the other hand, if the total charge transferred during anodization was fixed (in other words, anodization time was inversely proportional to current density), we obtained the maximum photoluminescent intensity at the current density of 20 mA/cm2.