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Impacts of density of deposited dielectric films on temperature dependence of interface dipole layer strength in multilayered dielectric capacitors for energy harvesting

We have proposed and successfully demonstrated the operation principle of the energy harvesting method with multi-dielectric layer capacitors in a temperature fluctuating environment, and showed that the temperature coefficient of the flat-band voltage (VFB) is one of the important factors to enhance its efficiency. Next, we investigated the impact of densities of both SiO2 and Al2O3 deposited films on measurement temperature dependence of the Al2O3/SiO2 interface dipole layer strength. A positive temperature coefficient of dipole layer strength was pronounced only when SiO2 was grown at a high temperature and Al2O3 was annealed at low temperature. It was suggested that both oxides were required to have a lower density for the positive temperature coefficient. These results indicate a guideline to control the temperature coefficient of dipole layer strength of a Al2O3/SiO2/Al2O3/SiO2··· multilayer stack, which is one of the important factors to determine the efficiency of the proposed energy harvesting method.