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Silicon Lattice Constraints on Structure of Interface States

The constraints imposed upon the Si-SiO/sub 2/ interface in MOS structures by the order in the silicon lattice have been considered. As a result models for the surface charge density, Q/sub ss/, and for the interface density near the band edges, N/sub ss/, have been derived. These models together with the excess silicon model of the hole trap which causes the radiation induced surface charge density, Q/sub r/, have been used to derive a mathematical model and a form for the radiation susceptibility.