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Macroinspection methodology for through silicon via array in three-dimensional integrated circuit

Abstract. We are developing a new macroinspection technology for through silicon via (TSV) process wafers. We present new simulation results obtained with a fine TSV model and new optics. The optical system includes not only diffraction optics, but also polarization optics, by which we can detect changes in the profile (cross-sectional shape) of repeated patterns by detecting changes in the polarization status of reflected light. We confirmed the performance of the methodology by optical simulation using a model of via patterns with 1 μm diameter and 10 μm depth as a typical intermediate-interconnect-level TSV.