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Statistical model of the NBTI-induced threshold voltage, subthreshold swing, and transconductance degradations in advanced p-FinFETs

We study the stochastic NBTI degradation of p-FinFETs, in terms of ΔVth, ΔSS, and Δgm. We extend our Defect-Centric model to describe also the SS distribution in a population of devices of any area, at any stage of product aging. A large fraction of nanoscale devices is found to show a peak gm improvement after stress. We explain this effect in terms of the interaction of individual defects with the percolative channel conduction, and we propose a statistical description of gm aging. Our Vth, SS, and gm aging models are pluggable into reliability-enabled compact models to estimate design margins for a wide variety of circuits.