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Very-Low-Energy Electron Beam Lithography Using a Retarding Field

This work explores the feasibility of very-low-energy electron lithography using a retarding field electron optical column and a self-developing resist. It is shown that the retarding field electron optical column has excellent focusing properties for a very-low-energy electron beam and permits focusing at energies as low as 20 eV. In addition, this study finds that poly (2-methylpentene-1 sulfone) (PMPS) is self-developed at exposures to energies of above 40 eV. Here, also a 0.6- µm line-and-space pattern is achieved using a 50-eV electron beam. It is demonstrated that the patterns produced by very-low-energy electron beam lithography exhibit excellent linewidth control.