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Ferroelectric SrBi2Ta2O9 thin films deposited on Si(100) by pulsed laser deposition

We report on the successful deposition of SrBi 2 Ta 2 O 9 (SBT) thin films directly on Si(100) substrates by pulsed laser deposition. The 200 nm thick SBT film deposited at a laser energy of 700 mJ and a temperature of 780 °C consisted of grains of less than 200 nm in diameter and exhibited a random crystallographic structure. The effective small signal dielectric constant and dissipation factor at 100 kHz were 177 and 0.014, respectively, and were relatively unchanged with increasing frequency up to 1 MHz. The SBT film showed good ferroelectric properties. The measured P r and E c were 10.6 μC/cm 2 and 182 kV/cm, respectively, at an applied electric field of 450 kV/cm. No significant fatigue was observed up to 10 10 switching cycles.