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Large-Area MOVPE Growth of AlGaAs/GaAs Heterostructures for HEMT LSIs

We report the large-area metalorganic vapor phase epitaxy growth of AlGaAs/GaAs heterostructures for high-electron-mobility-transistor LSI applications. We used a barrel reactor with a load capacity of twelve 3-inch wafers. Wafer rotation results in ultrauniform epitaxial layers. The variations in both layer thickness and the carrier concentration of a Si-doped AlGaAs layer are less than ±1% over an entire 3-inch wafer. Wafer-to-wafer variations among the twelve wafers are ±1.1% for layer thickness and ±1.8% for the carrier concentration. The particle density on an epitaxial layer is less than 10 cm-2.