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Photoelectric threshold of silicon wafer surfaces implanted with H, Si and Ar ions

The effect of ion implantation on the photoemission spectral yield for native oxide‐covered Si(100) wafer surfaces has been studied. Three types of H, Si and Ar atoms were employed for the ion implantation. For one sample the yield curve was measured successively first at 25 °C, next after heating to 340 °C, and subsequently after cooling to 40 °C. All implanted samples showed the photoemission in the spectral yield with a much enhanced intensity compared to a nonimplanted sample, moreover, more strongly at 340 °C than at 25 and 40 °C. The analysis of the yield curve showed two distinct photothresholds of ϕ1 and ϕ2, which can be attributed to the interface states at the SiO2/Si interface and the silicon bulk, respectively, and the creation of a localized emitting center ascribed to E′ center (≡ Si ·). Both thresholds for the implanted samples were reduced about 0.3–0.5 eV compared to those for the nonimplanted sample. The localized center appeared at the photon energy of 5.66 eV (25 and 40 °C) and 5.76 eV (340 °C), and the amount of the centers created at 340 °C was much greater than that at 25 and 40 °C. Interestingly, the amount of the E′ centers at 25 °C for the H implanted sample tended to decrease with an increase in the concentration of implanted H atoms. Copyright © 2010 John Wiley & Sons, Ltd.