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An improved version of the monolithic ESBT® with a higher current capability

The ESBT is a novel 4-terminal power actuator particularly suited to high-voltage and high frequency applications. This paper presents the second version of the technology that significantly increases the current capability of the device simply by a new layout design. The new layout reduces the effect of a lateral parasitic device intrinsic in the monolithic structure that drains part of the base current, so it is no longer available for the action of the main bipolar transistor of the ESBT. A 3-D device simulations have been carried out in order to find out the best layout solution then to minimize the efficiency of the parasitic diode. The first prototypes fully confirmed the predictions of the simulations.