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Low leakage current resistive memory based on Bi1.10 (Fe0.95Mn0.05) O3 films

The bipolar resistance switching characteristics were confirmed in a resistive memory device with an Ag/Bi1.10(Fe0.95Mn0.05)O3/SRO/Pt/TiO2/SiO2/Si(100) structure, in which the limiting current was 1 mA. In comparison with BiFeO3—based memory, it was found that doping with Mn effectively reduced the leakage current of the device and thus improved the device endurance (200 cycles-1000 cycles). The high-temperature retention test demonstrated that the device could be used for 10 years without losing data. Through x-ray photoelectron spectroscopy analysis of Bi1.10(Fe0.95Mn0.05)O3 thin film elements, it was inferred that both the oxygen vacancies, which are produced by high-temperature conditional growth, and the doped Mn change the Fe valence, thereby reducing the leakage current. Finally, through fitting analysis of the I–V diagram and temperature tests in the low-resistance state, we inferred that the behavior of the resistance conversion is due to the formation of Ag conductive filaments.