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Glancing angle fluorescence XAFS study on metal oxide thin films obtained by oxygen gas cluster ion beam assisted deposition techniques

Glancing angle fluorescence XAFS analysis of Ta and Ti oxide thin films, which were obtained by oxygen gas cluster ion beam assisted deposition techniques (GCIB), was made to analyze the valence states and the structures of the 'amorphous' thin films at atomic level. Glancing angle XAFS measurement was made for Ta L3-edge of the Ta oxide thin films and Ti K-edge of the Ti oxide thin films with 200 nm thickness, respectively, using the detection method of electron yield by conversion with He flow gas counter (CEY) at the beam line BL01B1 in the SPring-8. The Ta L3-XANES results indicate that the assistance of the oxygen GCIB leads to the higher oxidation state of the Ta atom. The Ta L3 and Ti K EXAFS results suggest that these metal oxide films obtained by the oxygen GCIB assisted deposition techniques have amorphous-like structure.