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TCAD Simulations of Nano-scale Functional Neuron MOSFETs with Splitted Gate Bias on Floating Gate

The basic structure and operation mechanism of the neuron MOSFET with splitted gate bias on floating gate are introduced in this paper. 14nm channel-length two-input-gate neuron MOSFET on bulk substrate is simulated by Sentaurus TCAD tools and the typical "variable threshold" characteristics are obtained for the nano-scale devices. Furthermore, UTB-SOI structure is utilized to enhance the device performance and is also simulated. Finally, the effects of related parameters are detailed analyzed. In conclusion, the value of coupling capacitance between the input gate and the floating gate and the sum of the structural capacitance can obviously affect threshold voltage.