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Chemical Mechanical Polishing for Surface Smoothing

Chemical Mechanical Polishing (CMP) has become a more and more important process for planarization in IC technology. For planarization, stacked pads with a hard top pad (for high planarization efficiency) and a softer sub pad (for acceptable uniformity) are used. In this work, the focus is to investigate CMP using a soft poromeric pad. Possible applications could be to create rounded structures for microptical devices or corner rounding to reduce stress in microstructures. Surface profile evolution during CMP of both inlaid and protruding pattern of line arrays completely etched in silicon dioxide is investigated. It is found that there is an exponential dependence of the step height in the arrays on the polish time. Also, wide silicon areas were open through the silicon dioxide. It is found that the soft pad allows polishing on the open silicon areas. Due to the selectivity of the slurry between silicon and oxide, the step height increases even though the silicon areas are situated below the oxide.