{'fraction_non_alphanumeric': 0.016740088105726872, 'fraction_numerical': 0.0, 'mean_word_length': 5.10752688172043, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Advanced Dicing Technologies for Combination of Wafer to Wafer and Collective Die to Wafer Direct Bonding

Feasibility study of alternative dicing technologies for collective die to wafer direct bonding combined with wafer to wafer direct bonded dies has been performed. Several dicing technologies such as blade dicing, laser grooving + plasma dicing, laser grooving + stealth dicing and laser grooving from backside were evaluated for this integration scheme. For the case of blade diced dies, the collective die to wafer direct bonding are not succeeded. This was due to particle interruption, caused by remaining particles from dicing. For the case of laser grooving + plasma dicing and laser grooving from backside, successful die to wafer direct bonding were observed. However, the die edge was not bonded for the case of laser grooving + stealth dicing. This was attributed to the occurrence of the laser recast caused during laser grooving. Based on the characterization of dicing techniques for this approach, we have achieved successful integration of collective die to wafer bonding combined with wafer to wafer bonded dies.