{'fraction_non_alphanumeric': 0.04790419161676647, 'fraction_numerical': 0.04910179640718563, 'mean_word_length': 4.291139240506329, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Preparation and Properties of N-Doped p-Type ZnO Films by Solid-Source Chemical Vapour Deposition with the c-Axis Parallel to the Substrate

We report on N-doped p-type ZnO films with the c-axis parallel to the substrate. ZnO films were prepared on an α-Al2O3 (0001) substrate by solid-source chemical vapour deposition (CVD). Zn(CH3COO)2·2H2O was used as the precursor and CH3COONH4 as the nitrogen source. The growth temperature was varied from 300°C to 600°C. The as-grown ZnO film deposited at 500°C showed p-type conduction with its resistivity of 42 Ωcm, carrier density 3.7×1017 cm-3 and Hall mobility 1.26 cm2V-1·s-1 at room temperature, which are the best properties for p-type ZnO deposited by CVD. The p-type ZnO film possesses a transmittance of about 85% in the visible region and a bandgap of 3.21 eV at room temperature.