{'fraction_non_alphanumeric': 0.024320457796852647, 'fraction_numerical': 0.005722460658082976, 'mean_word_length': 4.833333333333333, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
On the nature of large-scale electrically active defect accumulations in InP and GaAs

The results of a defectoscopic study of large-scale impurity accumulations in InP and GaAs single crystals are expounded. This has been carried out by means of the low-angle mid-IR-light-scattering technique ( lambda 0=10.6 mu m). Estimates of the main parameters of the accumulations (size and bulk free carrier concentration) and the activation energies of the point centres constituting them are given. A model of the inner structure of the accumulations is presented, according to which they are spherical regions enriched with In or Ga microinclusions and InP or GaAs antisites in InP and GaAs respectively.