{'fraction_non_alphanumeric': 0.03380281690140845, 'fraction_numerical': 0.004225352112676056, 'mean_word_length': 5.522935779816514, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Quantitative measurement of Indium atom distribution inside InGaN QWs with atomic sensitivity

Author(s): Jinschek, Joerg R.; Kisielowski, Christian | Abstract: In light emitting diodes (LED) consisting of indium gallium nitride (InGaN) quantum wells (QWs) in a GaN matrix, the atomic In distribution inside the wells defines device performance. We analyzed samples (LED structures) with a nominal In composition of 17%. Using a comparison of experimental electron exit waves with simulations we conclude that the amount of In segregation (deviation from Poisson distribution) can be quantitatively derived from intensities with a sensitivity allowing for the detection of 1 indium atom in columns of Ga atoms.