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Toward the modulation of negative index materials (NIM) by photoconductive coupling

In this paper, we demonstrate the feasibility of incorporating a modulation mechanism for negative index materials (NIM) at GHz frequency range by means of photoconductive coupling. This leads the way to a fully integrated monolithic NIM achievable by conventional microfabrication techniques. The photosensitive material was placed in the gap of the SRR structure and the response in terms of S-parameters was simulated using HFSSTM. Only the SRR particle was simulated, without any loss of generality to the extension in concept to a NIM comprising of both negative permeability and negative permittivity.