{'fraction_non_alphanumeric': 0.03228228228228228, 'fraction_numerical': 0.018018018018018018, 'mean_word_length': 5.0867579908675795, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Characterization of Spin Coated Tin Oxide Thin Films for Optoelectronic Applications

Sol-gel technique was operated to obtain pure tin oxide (SnO2) thin films. The films were grown at room temperature on clean glass substrates by a spin coating method. Tin (II) chloride dehydrate was used as a starting material, and 2-propanol was used as the solvent. Tin molarity was kept [Sn2+]  0.3 M. The SEM micrographs of the elaborated films show that they are composed of very fine-grained microstructure of SnO2. XRD analysis reveals that all annealed films consist of single phase SnO2, the diffractograms indicate the presence of (100), (101), (211) peaks corresponding to the tetragonal phase without any secondary phases. The scanning electron microscopy and the atomic force microscopy images show the evolution of the different surface morphologies; all films have homogeneous and uniform surface morphology. The transmission electron microscopy measurements confirm that the prepared films are nanocrystalline. Furthermore, the influence of multiple coating on the optoelectronic properties of SnO2 thin films is examined. In the visible region, the transmittance is greater than 85 %. The resistivity of SnO2 thin films decreases significantly with the thickness. The estimated maximum value of conductivity is 2.72 (Ω.cm) – 1.