{'fraction_non_alphanumeric': 0.03631647211413749, 'fraction_numerical': 0.010376134889753566, 'mean_word_length': 4.7611940298507465, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
A bulk-controlled ring-VCO with 1/f-noise reduction for frequency ΔΣ modulator

The paper introduces a bulk-controlled ring-VCO with a tail transistor utilizing flicker-noise (1/f-noise) reduction techniques for a frequency-based ΔΣ modulator (FDSM). This VCO converts an analog input voltage to phase information under various bias conditions ranging from sub-threshold to saturation. By using the 1/f-noise reduction circuit which is based on the switched bias technique, the simulations indicate that less noise is transferred to the output when the 1/f-noise reduction circuit is used. The phase noise of the proposed VCO is improved by 7.6% while maintaining tuning-range and linearity compared to conventional VCO. The circuit is designed using a 90nm CMOS process.