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Optimizing nanoscale MOSFET architecture for low power analog/RF applications

This work reports on possible ways of improving analog/RF performance metrics, through device structure optimization, for low power applications. It is shown that underlap source/drain (S/D) design and junctionless transistor architecture can both yield improved analog/RF figures of merit in comparison to conventional abrupt source/drain MOSFETs. Junctionless devices overcome the gain-bandwidth trade-off associated with analog design. The results are significant for RFICs in emerging ultra-low-power technologies.