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High Temperature Reproducible Preparation of Mg 2 Si Films on (001)Al 2 O 3 substrates Using RF Magnetron Sputtering Method

A RF magnetron sputtering method was used to prepare Mg 2 Si films at 300-400 o C on (001) Al 2 O 3 substrates from a Mg disc target with Si chips. Mg deposition was not detected at 400 ° C from a pure Mg disc target without Si chips due to the high vapor pressure of Mg. However, the amount of Mg deposition increased with the increase in Si/(Mg+Si) area ratio of the target surface together with the increase of the Si deposition. The obtained films had a stoichiometric composition of Si/(Mg+Si)=0.33 that consisted of the well crystalline Mg 2 Si single phase regardless of Si/(Mg+Si) area ratio of the target surface. This showed the existence of a “process window” against supply ratio of Si/(Mg+Si) for Mg 2 Si single phase films with a stoichiometric composition. This is considered to be due to the vaporization of the excess Mg prepared under the Mg excess condition as reported by Mahan et al. for Mg 2 Si films prepared at 200 ° C by ultra-high vacuum evaporation.