{'fraction_non_alphanumeric': 0.020802377414561663, 'fraction_numerical': 0.008915304606240713, 'mean_word_length': 5.017857142857143, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Non-linear Characterization and Modeling of 3-port Transistor

This paper presents a 3-port modeling and electrical characterization methodology for a GaAs HEMT transistor. From the I-V measurements and the S-parameters, a nonlinear model has been developed. The interest of this methodology is to determine accurate 3-port nonlinear model in high frequencies compared to the standard 2-port modeling approach provided by foundries. The modeling methodology presented in this paper has been validated up to 40 GHz for several bias points on a transistor expected for a Ku-band LNA design. Accuracy of this approach is highlighted by simulation and measurements comparisons.