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Redefining the Mobility Edge in Thin-Film Transistors

In most thin-film transistors, the concept of mobility edge needs to be redefined so as to take into account important constraints. In this paper we describe how the mobility edge concept has to be reinterpreted when applied to thin-film transistors. Charge carriers can be significantly localized due to strong scattering, altering the model of band transport in extended states so that, effectively, only a fraction of carriers can actually move in the extended states, in accordance with a statistical distribution of free paths. It is necessary to explicitly consider this effect in applying conventional semiconductor transport theories based on solutions to the Boltzmann Transport Equation (BTE). We are then able to apply the BTE with appropriate scattering mechanisms and obtain results that agree well with experiment for the case of a polymer thin-film transistor (TFT). This approach is very well suited to thin-film transistors based on polymer and organic semiconductors, and also many amorphous oxide semiconductors with room temperature mobilities in the range 1-20 cm 2 /(Vs).