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Characterization of Depletion Layer using Photoluminescence Technique

The depletion layer formed at the interface of aluminum (Al) with poly(3-hexylthiophene-2, 5-diyl) (P3HT) has been studied, using the bias dependent photoluminescence (PL) spectra in indium tin oxide (ITO)/P3HT/Al sandwiched cells. A quenching in the PL intensity has been observed under the reverse bias conditions, which has been attributed to the increase in the depletion layer width. A direct relationship between the depletion layer width and the PL quenching has been derived and explained.