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Surface Treatments of Poly(4-Vinyl Phenol) Insulator for High-Performance Pentacene Thin-Film Transistors

We herein demonstrate a method for reducing the surface energy in polymer insulators for high-performance organic thin-film transistors (OTFTs). The surface energy of the poly(4-vinyl phenol) (PVP) insulator was reduced from 45 mJ/m2 to 32 mJ/m2 by treatment with UV/Ozone and octadecyltrichlorosilane (ODTS). The pentacene growth was controlled by the surface energy. It caused the pentacene film deposited on the ODTS-treated PVP insulator to induce three-dimensional growth, leading to an increase in the field-effect mobility of approximately 109%. These results demonstrate that the method of adjusting the surface energy in polymer insulators is suitable for enhancing the performance of OTFTs.