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Dielectric enhancement of AlN based multiferroic heterostructure via insertion of NiMnIn thin layer between AlN film

In the reported work, the electrical measurements of DC sputtered Aluminum Nitrite (AlN) films with an insertion of a NiMnIn thin layer have been carried out. The fabricated AlN thin films exhibit highly (002) orientated wurtzite structure. Such highly c-axis wurtzite AlN thin films are required for better piezoelectric response and magneto electric coupling. Significant improvement in the dielectric constant is observed in fabricated AlN/NiMnIn/AlN structure as compared to that of pure AlN film with similar thickness. This enhancement can be related to the relocation of the strong interface charges stuck between the AlN and NiMnIn layers combined with the space-charge or stress effect and inter-facial polarization created between the metallic and the insulator regions segregated intrinsically in the hetero-structure. Such research demonstrates AlN/NiMnIn/AlN hetero-structure as potential candidate for novel magneto-dielectric actuator/sensor devices applications.