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Automated vertical design optimization of a 1200V IGBT

Many important performance parameters in an IGBT power semiconductor are heavily affected by its field-stop profile, its device thickness and its collector-side p-doping concentration. To find the optimum combination of these design parameters is of high importance for an optimal IGBT design. The optimization criteria include low switching and on-state losses as well as limited maximum overshoot voltage and modest current and voltage rise and fall times. This work focusses on an automated global optimization scheme to solve this issue. The method and definition of a proper target function are briefly explained. Finally, design optimizations found under different constraints are discussed.