{'fraction_non_alphanumeric': 0.017687074829931974, 'fraction_numerical': 0.0, 'mean_word_length': 5.814814814814815, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Ferromagnetic GaMnP Prepared by Ion Implantation and Pulsed Laser Annealing

We present the magnetic, transport, and structural properties of GaMnP with different Mn concentrations prepared by ion implantation and pulsed laser annealing. The Curie temperature increases with Mn concentration and the samples show in-plane magnetic anisotropy due to the in-plane compressive strain in the GaMnP layer. Anomalous Hall effect and negative magnetoresistance are observed, indicating the carrier mediated nature of the ferromagnetism in GaMnP. According to the micro-Raman spectroscopy data after pulsed laser annealing, the implanted layer has been fully recrystallized and the carrier concentration (hole) increases with Mn concentration.