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Thermal Reduced Order Model for an Electronic Power Module

A reduced order model (ROM) is developed in order to study the thermal behavior of a power module. The cooling system is modeled by a heat transfer coefficient. The studied power module consists of 12 silicon carbide MOSFETs, a direct bonded copper (DBC) and a spreading base plate. When selecting and designing a cooling solution for an electronic power module, an accurate and fast thermal model is required Classical approaches based on 1D thermal network models don t take into account the spreading effect in the electronic board Thermal spreading resistance expression can be used [ref], but as it depends on boundary conditions and the power module layout, it will lead to inaccurate results. An efficient way to overcome all these limits is to construct a 3DROM of the studied power module with a convection boundary condition modeling the cooling system. The heat transfer coefficient depends on the design parameters of the cooling system and the operating conditions (mass flow rate of the cooling fluid). After constructing the ROM and verifying its accuracy for large range of power losses and heat transfer coefficient, it can be used to assess the efficiency of any cooling technology. In this paper, we give a description of the reduction method based on proper orthogonal decomposition (POD) and Galerkin projection. Obtained results show a good tradeoff between accuracy and low computing time for the studied case.