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Matrix single stage distributed amplifier design for ultra wideband application

This paper proposes a new amplifier topology, the matrix single stage distributed amplifier (M-SSDA). The amplifier employs only multiplicative gain, hence, potentially offering a higher gain-per-device than both the conventional DA and matrix amplifier. Functionally similar to the cascaded single stage distributed amplifier (C-SSDA), the M-SSDA has advantages in smaller circuit footprint, a potential for lower transmission line losses and better noise performance. A 2-tiered common-emitter (CE) M-SSDA based on a full foundry double heterojunction bipolar transistor (DHBT) model is presented, demonstrating the viability of the proposed design. The S-parameter performance of the proposed circuit is compared with that of a C-SSDA with two gain cells to show the similarity in their gain and bandwidth performance. To further demonstrate the utility of the proposed design concept, a practical 3×1 M-SSDA circuit is presented. In this circuit, improvement in bandwidth performance is achieved by scaling down the inductance on the input and intermediate transmission lines and introducing a high frequency peak on these lines through shunt capacitance. A cascode configuration with negative resistance attenuation compensation is applied in the gain cells to achieve a flat gain profile. Simulations predict a gain of 20dB at 324GHz bandwidth; more than threefold bandwidth improvement compared to the basic CE M-SSDA design.