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Z-contrast imaging of dopant precipitation and redistribution during solid and liquid phase epitaxial growth of ion-implanted Si

Z-contrast STEM using a high angle annular detector has been used to study precipitation and redistribution of dopant during solid and liquid phase epitaxial growth of In and Sb implanted Si. Both the pile-up phenomenon seen during solid phase regrowth and the long-range redistribution of dopant accompanying amorphous to polycrystalline transformation have been directly linked to the presence of highly mobile liquid precipitates. Quantitative Z-contrast imaging has been used to study the dopant distribution between cell walls following pulsed laser annealing. The potential of Z-contrast STEM for providing high resolution atomic structure imaging with high elemental sensitivity is discussed.