{'fraction_non_alphanumeric': 0.03546099290780142, 'fraction_numerical': 0.0, 'mean_word_length': 5.086206896551724, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Test-circuit-based extraction of inter- and intra-chip MOSFET-performance variations for analog-design reliability

We propose an efficient, test-circuit-based method to determine not only CMOS-device-parameter variations but to simultaneously separate intra-chip from inter-chip variations. The method is demonstrated by using a differential-amplifier stage with feedback coupling as the test-circuit and the drift-diffusion MOSFET model HiSIM for the circuit simulation. The result shows that the proposed test circuit, when constructed only with n-MOSFETs or p-MOSFETs, enables one to separate gate length and channel doping variations as well as their inter- and intra-chip magnitudes in a direct way.