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Crystallization of Cu2O Stripes on Fused Silica Substrates by Using Micro-Chevron Laser Beam

Lasers are often used to process materials. For example, crystallization of amorphous semiconductor can be induced by having laser light interact with the semiconductor and having amorphous semiconductor undergo a liquid-solid phase transition – laser-induced crystallization. While laser-induced crystallization is predominantly utilized in preparing thin films made of such single chemical elements as silicon and germanium, extending its use for semiconductors that contain multiple chemical elements (e.g., metal oxides) unfolds applications that have yet to be envisioned. In this paper, a continuous-wave laser diode with a micrometer-scale chevron-shaped beam profile – micro-chevron laser beam (μ-CLB) – was exploited to convert amorphous CuO thin films prepared on fused silica substrates into single-crystal Cu2O stripes under various crystallization conditions. The dependence of the crystallization on laser power density and laser scan rate was investigated by Raman spectroscopy and ana