{'fraction_non_alphanumeric': 0.025059665871121718, 'fraction_numerical': 0.0, 'mean_word_length': 5.606299212598425, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
A Model for the Steady-State Photoconductance of an Abrupt p-n Junction Semiconductor Diode Assuming Flat Quasi-Fermi Levels

A theoretical model for the steady-state photoconductance of an abrupt p-n junction semiconductor diode is presented. It assumes one-dimensional geometry and flat quasi-Fermi levels (QFLs) and involves a numerical integration over electrostatic potential. The flat-QFL model permits the determination of the excess carrier concentration in both quasi-neutral regions from a measurement of a semiconductor's photoconductance, accounting for depletion-region modulation more accurately than its alternatives-particularly for thin samples and low-injection conditions. The model can be generalized to include variable carrier mobilities and to have different intrinsic carrier concentrations in n- and p-type layers