{'fraction_non_alphanumeric': 0.03867403314917127, 'fraction_numerical': 0.01841620626151013, 'mean_word_length': 5.247126436781609, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Dependence of Absorption Coefficient and Acid Generation Efficiency on Acid Generator Concentration in Chemically Amplified Resist for Extreme Ultraviolet Lithography

The absorption coefficient and acid generation efficiency are elemental key factors for the design of chemically amplified resist because the acid distribution in resist films is primarily determined by these two factors. In this study, the number of acid molecules generated in a model system of chemically amplified extreme ultraviolet (EUV) resists [poly(4-hydroxystyrene) film dispersed with triphenylsulfonium-triflate (TPS-tf)] was evaluated using an acid sensitive dye. The absorption coefficient and acid generation efficiency were evaluated by changing film thickness. The acid generation efficiency was 1.7 (5 wt % TPS-tf), 2.5 (10 wt % TPS-tf), and 3.1 per photon (20 wt % TPS-tf), respectively. The absorption coefficient of the model film was 3.8±0.2 µm-1. The effect of acid generator concentration on the absorption coefficient of resist films was negligible within the concentration range of 0–20 wt %.