{'fraction_non_alphanumeric': 0.03959131545338442, 'fraction_numerical': 0.022988505747126436, 'mean_word_length': 4.52112676056338, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Highly efficient and ultra-fast visible-blind ultra-violet detectors

A two-step molecular beam epitaxy growth approach, which enjoys the advantage of being wet-chemical-etching free, was developed to fabricate a ZnSTe-based Schottky barrier photovoltaic ultra-violet (UV) detector array on GaP [100]. Visible blind and UV sensitive response were achieved with peak UV responsivity of 1.23 A/W and 1.2/spl times/10/sup 6/ V/W at 320 nm. Through the measurement of the photovoltage output as a function of incident photon power, the built-in potential of the detector was determined to be 1.7 V. Temporal response measurement of the device shows that the photocurrent decays with a time constant as fast as 1.2 ns, limited apparently by the RC time constant of the detector structure.