{'fraction_non_alphanumeric': 0.038314176245210725, 'fraction_numerical': 0.010217113665389528, 'mean_word_length': 5.272, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Non-thermal liquid-to-solid Si conversion induced by electron beam irradiation

A liquid precursor for the semiconductor, Si, called liquid Si (liq-Si), was synthesized. Although liq-Si is converted to semiconducting Si by heating at 400 °C, herein, we demonstrate liquid-to-solid Si conversion without heating using liquid-phase electron beam-induced deposition. This technique realizes the direct deposition of semiconducting Si by irradiating liq-Si with an electron beam. Specifically, at electron beam (diameter, ∼50 nm) irradiation, a Si deposit with a diameter of approximately 240 nm was obtained. It is expected that the application of this developed method will enable the production of high-resolution Si nanostructures and grant access to previously inaccessible devices.