{'fraction_non_alphanumeric': 0.03088803088803089, 'fraction_numerical': 0.023166023166023165, 'mean_word_length': 4.63768115942029, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Band Offsets of InN/GaN Interface

In this paper, we report on the band discontinuities of the wurtzite-InN/GaN interface. X-ray photoemission spectroscopy studies reveal that the offset ratios of conduction bands and valence bands are approximately 80 and 20%, respectively. The valence band offset (0.5 eV) is close to the theoretical value determined on the basis of the density functional theory from first principle that was reported by Wei and Zunger [Appl. Phys. Lett. 69 (1996) 2719]. The photoluminescence signals of InN/GaN quantum wells were also studied. The luminescence of the wells showed a 60 meV quantum confinement shift from the bulk InN signal. The finite potential well model of quantum mechanics is used to show that this shift supports the above results.