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On the off-Bragg reflectivity enhancement in dynamical multiple diffraction of X-rays by an In(0.5)Ga(0.5)P/GaAs heteroepitaxial structure.

The effect of dynamical interactions between reflections involved in 000/111/220 multiple diffraction by an In(0.5)Ga(0.5)P/GaAs heteroepitaxial structure was observed, which significantly increases the intensity of the (111) reflection in the region of the total (220) reflection from the substrate during Renninger-like scanning. The amplitude of the peak is roughly five times as great as the peak of detoured excitation for ideal GaAs. Possible applications of the observed feature in synchrotron-radiation-based studies are discussed.