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Low-Temperature-Processed Polycrystalline Silicon Thin-Film Transistors Using Titanium Disilicide Contacts for Source and Drain

We propose a new process without source-drain doping for realization of low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFT's). The process is based on TiSi2 contacts for source and drain. Titanium disilicide was formed by in situ silicidation using high-temperature magnetron sputtering at 450° C. The new device has demonstrated better leakage characteristics (∼0.4 pA/µ m) and slightly lower ON current compared with standard-processed devices having phosphorus-doped source and drain with a dose of 1×1014 cm-2. The field-effect mobility (∼10 cm2/ V·s) and I on/I off current ratio (∼1.2×106) are comparable to those of standard-processed devices.