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Spatially-Resolved Strain-Wave Dynamics in MoS2

Band structures and, therefore, electronic and optical properties of transition metal dichalcogenides are sensitively dependent on crystal thickness (i.e., number of layers) and applied elastic strain in the few to single-layer limit [1,2]. The most widely studied example is MoS2, in which the band gap was discovered to increase from 1.3 eV in the bulk to 1.9 eV for a single layer, with a commensurate transition from an indirect to direct gap. Consequently, MoS2 and other TMDs and heterostructures are being explored as active elements in thin, flexible electronic and photonic devices [3]. The interesting structure-function properties of these materials has spurred interest in structural and mechanical effects on charge-carrier and transport dynamics, as well as the possibility of strain-engineering phase transformations [4]. In addition, the importance of grain boundaries, vacancies, terraces, and interfaces with respect to electronic, optical, and mechanical properties has been demonstrated [5]. While the transient response of charge-carrier dynamics has been extensively studied with ultrafast spectroscopic approaches [6], the structural response to coherent (rapid) perturbation (via photoexcitation, for example) is not well understood, especially on the scale of individual crystal defects.