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New Hole Transport Materials via Stoichiometry-Tuning for Colloidal Quantum Dot Photovoltaics

Colloidal quantum dots (CQDs) are of interest for photovoltaic applications such as flexible and multijunction solar cells, where solution processability and infrared absorption are crucial; however, current CQD solar cell performance is limited by the hole transport layers (HTLs) used in the cells. We report on a method to develop new HTLs for the highest-performing PbS CQD solar cell architecture by tuning the stoichiometry via sulfur infiltration of the p-type CQD HTL to increase its doping density and carrier mobility. Using SCAPS simulations, we predict that increased doping density and mobility should improve the performance of the solar cells. We show that sulfur doping of the current HTL is a facile and effective method to boost the performance of CQD photovoltaics.