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Bound states in n-inversion layers on small-gap HgCdTe at finite temperature

The authors calculate the subband states in n-inversion layers on p-Hg1-xCdxTe at finite temperature using a numerical self-consistent procedure based on the six band k.p model for the band structure near the Gamma point. Results from the calculations are presented for different values of the physical parameters, and the applicability limits of the model are discussed.