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Performance and Characteristic Analysis of Graphene Field Effect Transistor with Different Channel Widths

In this paper, the Graphene Field Effect Transistor (GFET) is presented in terms of thermal and electrical properties by varying its channel's width. For channel widths- 1μm, 3μm, and 5μm, the electrical properties of GFET like hole density, velocity profile, I-V characteristics, and electron density, and the thermal properties like temperature profile in the respective channel region have been studied. It's been found that increasing the width of the Graphene Field-Effect Transistor leads to improvement in the overall electrical and thermal properties.