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Simulation and analysis of low-energy electron beam lithography on topographical substrates

Monte Carlo method is utilized to simulate low-energy electron-beam (e-beam) lithography over a flat or a topographical substrate with uneven resist surface. The electron scattering trajectories and three-dimensional (3-D) development profiles on a flat or a topographical substrate have been revealed. Simulations of line scan over a topographical step and uneven resist have shown a line “swelling” effect. The line “swelling” effect is more obviously affected by uneven resist surface than substrate topography in the low-energy e-beam lithography. Dose control method can reduce the line swelling effect effectively.