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Incremental Preparation and Absorbing Properties of SiC Nanowires

With the rapid development of science and technology, the requirements for absorbing materials in various fields are more and more high. SiC material, as a kind of absorbing materials, has a variety of excellent characteristics, and it is one of the key research absorbing materials. This experiment chose activated carbon powder and silicon powder to grow the SiC nanowires on the graphite paper. In the process, activated carbon atoms on the surface of the graphite paper and coarse porous structure are more likely to contribute to formation of SiC crystal nucleus. In addition, increasing the water vapor in the experiment can improve the output of SiC nanowires, which is a highlight of preparing and improving the yield of SiC nanowires in this experiment. The microstructure and morphology of the SiC nanowires were characterized by XRD and SEM, and the microwave absorbing properties of the SiC nanowires was tested. When the molar C/S ratio is 2: 1 and the reaction sintering temperature is 1300℃, the SiC nanowires have smooth and uniform surface and high aspect ratio. At the same time, by studying the wave absorption properties, it is found that the SiC nanowires prepared have good dielectric properties and high reflection loss rate.