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Dielectric and polarization characteristics of sol-gel derived lead zirconate titanate thin films: effect of erbium doping

We have demonstrated that for up to I at % Er doped PZT (53/47) thin films the dielectric constant, switchable polarization, and the dielectric breakdown voltage increase. The fatigue resistance was found to increase with higher Er contents (3-5 at%). The improvement of the dielectric and ferroelectric properties for up to 1 at% Er doping has been argued to be related to the relative site occupancy of Er as a function of Er contents in PZT host lattice.