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Concurrent dual band hybrid power amplifier in 0.25μm GaN technology

This paper reports a dual-band radio frequency (RF) high-efficiency power amplifier (PA) employing 0.25 μm gallium nitride (GaN) technology for multi-band transmitter applications. The hybrid PA simultaneously covers 2-distinct telemetry bands, L (1.435–1.85 GHz) and C (5–5.15 GHz). The concurrent PA has a simulated large signal gain of 12.5 dB, saturated output power (Pout) of 35.5 dBm, and power added efficiency (PAE) of 65% at Upper L-band with greater than 50% efficiency through the entire L Band. Similarly, the PA achieves large signal gain of 13.7 dB, Pout of 36.7 dBm, and PAE of 61 % at C-band.