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Parameter calibration on post-ion-implantation dopant diffusions

Model parameters used to describe post-implant arsenic and boron diffusions were selected with care and calibrated by using the inverse modeling optimizer "PROFILE". The parameter calibrations performed were based on the best fitting of numerical process simulation to the corresponding experimental SIMS (secondary ion mass spectrometry) measurement data. In this case, grouped model parameters were calibrated in cascade, resulting in good reproduction of dopant depth profiles. On the basis of the extracted parameters, together with the corresponding uncertainties for calibration, the dopant diffusion kinetics and mechanisms were analyzed and discussed.