{'fraction_non_alphanumeric': 0.01694915254237288, 'fraction_numerical': 0.0, 'mean_word_length': 4.794117647058823, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
A novel single-device-well MOSFET gate

A novel MOSFET structure based on merging an enhancement type device and a depletion type device in a Single Device Well (SDW) is introduced. The SDW structure utilizes the inherent two dimensional geometry of a MOSFET device well to obtain two devices perpendicular to each other, having the same gate. The two perpendicular currents of the devices in the merged structure are analyzed. An analytical model is developed and circuit CAD simulations is performed. A single SDW structure can realize a complete gate and some circuit examples are given.