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A charge conserving capacitance model for GaAs MESFETs for CAD applications

A charge conserving capacitance model for GaAs MESFETs for Computer Aided Design (CAD) applications is presented. Simple analytical expressions for node charges were developed by integrating the sheet charge density over the gate length, which guarantees the charge conservation. The capacitances were defined by taking derivatives of the charges with respect to terminal voltages at the three nodes. The resulting, so-called transcapacitances are nonreciprocal in nature. Thus, we have defined a new equivalent circuit based on a total of nine transcapacitances, which can be organized as a 3 × 3 matrix. The model is valid both above and below threshold. Good agreement has been demonstrated with the experimental data.