{'fraction_non_alphanumeric': 0.02635658914728682, 'fraction_numerical': 0.006201550387596899, 'mean_word_length': 5.525252525252525, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Variation Study and Implications for BJT-Based Thin-Body Capacitorless DRAM

Variability in back-gated thin-body capacitorless DRAM cell performance is investigated via TCAD simulation. Sources of variability considered include variations in front gate oxide thickness, body thickness, buried oxide thickness, and gate-sidewall spacer width, as well as random dopant fluctuations. Bipolar junction transistor-based cell operation is most sensitive to variations in body thickness and buried oxide thickness. Retention time for an optimized 22 nm-node cell design is predicted to be reduced by approximately 63% due to process-induced variations.