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Control of Crystal Structure and Ferroelectric Properties of Pb(ZrXTi1-X)O3 Films Formed by Pulsed Laser Deposition

Pb(ZrXTi1-X)O3 (PZT) thin films on Pt/SiO2/Si substrates formed by pulsed laser deposition (PLD) and subsequent rapid thermal annealing (RTA) have been investigated. X-ray diffraction (XRD) and atomic force microscopy showed that the crystalline structure and the crystallographic orientation of PZT films after RTA, sensitively depended on the microstructure of as-deposited films. The preferentially (100)-oriented perovskite PZT films forming a trigonal structure were obtained from the as-deposited films that had contained small grains having a pyrochlore structure. This type of perovskite structure was found to depend also on the oxygen pressure during PLD. Chemical composition analysis by X-ray photoelectron spectroscopy clearly revealed the characteristics of a Zr-rich composition which induced the trigonal phases in the films, which were consistent with the XRD results. The capacitors made from these films showed large remanent polarization.