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Effect of Self-Consistency Technique on Current Density Profile of Resonant Tunneling Diode

This paper reveals the importance of self-consistency technique for computing current density in resonant tunneling device. AlxGa1-xAs/GaAs/AlyGa1-yAs structure is considered for simulation purpose, and both Schrödinger and Poisson's equations are simultaneously solved subject to appropriate boundary conditions to obtain current density as a function of externally applied bias. Structural parameters and material compositions within type-I range are varied to get the fluctuations in current, which is otherwise absent when calculation is performed without applying self-consistency technique. Findings are significant as magnitude of current obtained is higher than that obtained when self-consistency is absent. Result has immense importance for low bias application of RTD due to the presence of peaks at particular system compositions.