{'fraction_non_alphanumeric': 0.029229406554472984, 'fraction_numerical': 0.03188662533215235, 'mean_word_length': 4.678391959798995, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Silicon Dioxide Film with Low Dielectric Constants using Liquid-Phase Deposition

We propose a method which is advantageous for forming F bonds in the Si–O network without any external energy assistance. This method can be used to grow SiO2 films in supersaturated fluorosilicic acid (H2SiF6) at room temperature. The dissociation reaction between H2SiF6 and H2O leads to the formation of silica and the deposition of SiO2 films on the surface of substrates. Because the reaction involves an aqueous acid which contains fluorine, F bonds are formed in the films naturally. The percentage of F atoms increased from 3.5 to 4.75% according to X-ray photoelectron sectroscopy (XPS) survey, and the F1S peak changed from 687.72 to 687.18 eV with an increase in concentration from 2.25 to 3.25 mol/l, respectively. In addition, due to the effect of F bonds inside the film, the dielectric constant also decreased from 3.7 to about 3. Atomic force microscopy (AFM) images showed that the surface roughness increased with increasing H2SiF6 concentration due to the attack of F; however, the maximum surface roghness was less than 0.5 nm.