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Evolution of Defect States from Different Starting States in La1-xSrxFeO3 Thin Films

Understanding how materials behave in extreme conditions including under irradiation in important for understanding how robust the structures are and how under what conditions decomposition and amorphization occurs. Prior studies suggest that certain structures, such as film/substrate interfaces, may be more robust to amorphization. Spurgeon et al. [1] showed that when epitaxially grown crystal La 2 Ti 2 O 7 thin films grown on STO (110) were irradiated (ex-situ) by Zr ions at 1 MeV, disorder and amorphization progressed first in the film then the substrate, but the interface maintained crystallinity on the substrate side. The findings of this study raise the question of how different initial states of a thin film might affect the evolution of disorder and amorphization and whether different substrates have an effect. To understand how different initial states affect the development of irradiation damage, we examine the material system La 1-x Sr x FeO 3 (LFSO) grown on STO (001) and LSAT (001). Thin films of LaFeO 3 (LFO) and LSFO are epitaxially grown by PLD and MBE to produce single crystal LFO and LSFO films. In addition, some LFO films are made containing defect domains, which, under examination by scanning transmission electron microscopy (STEM) imaging, appear to be ruddlesden-popper phases. These defect domains are roughly columnar in shape and begin between 3-4 nm above the substrate. To probe the different stages of damage leading up to amorphization, films were masked and irradiated to progressively higher doses in quadrants to 0.1, 0.2, and 0.5 dpa with Au at