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An Au buffer layer for the growth of a ZnO sol–gel film on a Si substrate

In this work, we demonstrate the influence of an Au buffer layer on the structure and photoluminescence (PL) properties of ZnO sol–gel thin films on Si substrates. An Au layer was deposited on the silicon substrate by the evaporation deposition method from highly pure Au (99.99%) wires. Then, a ZnO film was prepared by the sol–gel method with spin-coating technology, followed by calcinations in air at 600 °C for 1 h. The structures and morphologies of the prepared films were characterized by x-ray diffraction, energy dispersive spectrum analysis, atomic force microscopy and PL. The results show that the prepared ZnO thin film with an Au buffer layer exhibits good crystallinity and surface morphology compared with that without an Au buffer layer. Interestingly, different from other previous reports on buffer layers with PL-enhanced properties, the ZnO thin film with Au buffer layer showed an obvious violet PL-quenched property.