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SEM investigation on IGBT latch-up failure

Latch-up failure is one of the most important failure phenomena of IGBT modules because of the p-n-p-n sandwich device structure. Half-bridge IGBT modules latch-up failure was observed by a switching test. The SEM technique was employed in the failure analysis work in order to investigate how the module was destroyed by latching-up. This paper reports the failure analysis results and the relevant analysis techniques used in the work.