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Effect of temperature variability on RF performance of Germanium pTFET

Recent days, Tunnel FETs are the potential replacement of conventional MOSFET. And, germanium (Ge) is considered to be a good alternative of Si as channel material of TFET to boost the on current. However, the variation in lattice temperature is a crucial issue in device performance as it modulates the band gap narrowing and hence tunneling characteristics of TFETs. In this study, we report on the comparative analysis of temperature variability for Germanium pTFET in Radio frequency domain. Also, the dc characteristics mechanism with Subthreshold Slope (SS) is demonstrated. Our simulation work includes the analysis of RF Figure-of-Merits (FOMs) of Ge-pTFET in terms of total capacitance (Cgg), cutoff frequency (fT) and intrinsic time delay (τm). The results show that high temperature exhibits better RF performance along with negative impact on intrinsic time delay.