{'fraction_non_alphanumeric': 0.02252252252252252, 'fraction_numerical': 0.0, 'mean_word_length': 6.25, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Investigation of the Performance of Carbon Nanotube and Silicon Nanowire Junctionless Transistors using First – Principle Calculations

In this work, we present atomic scale simulation of junctionless semiconducting single–walled carbon nanotubes field effect transistors (CNT–FETs) and compare their performance to silicon nanowire (SiNW) transistors with similar dimensions. The energy dispersions relations for p–type SiNW and CNT are compared. The response of the transistors to source–drain bias and gate voltage is explored. Considering charge self–consistency in the transport calculations enables us to provide quantitative predictions of subthreshold slope.