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The temperature dependence of the reflectivity of p-type Pb1-xSnxTe

A temperature dependence of the plasma edges found in the infrared reflectivity of p-type Pb1-xSnxTe (x<or=0.20) is reported. The shift in frequency of the reflectivity minimum can be as great as 10% between room temperature and 20K and is thought to arise from the temperature dependence of the band structure. Unless correctly interpreted the shift can produce an uncertainty of 20% in the carrier concentration deduced from the experiment. The observed edge is less temperature-dependent at frequencies close to that of the LO phonon.