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Variation of Pt Si-nSi Barrier Height with Fabrication Parameters, and Characterisation of the Electrical Behaviour of the Junction

Photoelectric barrier height measurements of the PtSi-nSi junction are reported for varying fabrication parameters. These include crystal orientation, sputter-etch procedures, thickness of the deposited metal layer, crystal resistivity. Variations up to ≃ 0.1 eV are found and crystal orientation has the largest influence. Deviations from the ideal IV-characteristics for the junctions are reported. The diode saturation current (as derived from forward characteristics) varies two orders of magnitude over the wafer resistivity range 0.1-500 Ω-cm. This agrees with expectations from numerical integration of the transport equation in the depletion region. This variation is usually not considered in the treatment of Schottky diodes but is larger than, e.g., effects due to quantum reflection and phonon collisions at the barrier.