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A Novel Drain Design for ESD Improvement of UHV-LDMOS

This paper investigates the electrostatic discharge (ESD) failure mechanism in the human body model of circular ultrahigh voltage lateral diffused MOS-type devices. Failure occurs due to the current crowding effect at the N+ junction edge of the drain adjacent to the field oxide. Instead of a large single N+ diffusion, a novel drain design with small multidiffusions is proposed to eliminate the current crowding and to enhance its ESD performance.