{'fraction_non_alphanumeric': 0.01991150442477876, 'fraction_numerical': 0.0, 'mean_word_length': 5.565217391304348, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Impact of Pulse Quenching Effect on Sensitive Area at Advanced Technologies

The impact of pulse quenching effect on the sensitive area is evaluated by using three-dimensional technology computer-aided design (TCAD) numerical simulation. Simulation results present that the pulse quenching effect could effectively reduce the sensitive area of PMOS transistors. By adopting the off-state gate isolation technique, the sensitive area is further reduced.