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Integrating Homogeneous Current-Saturation Graphene Transistors Into High-Linearity Amplifiers

In this work, a new type of graphene ICs only comprising multiple graphene field-effect transistor (GFET) components is first reported. Based on the GFET design that enables homogeneous electrical characteristics in batch-made devices, the practicality and functionality significances of multi-GFET integration are experimentally demonstrated via high-fidelity amplifiers for baseband analog signals. Different from the quadratic relationship of the gate-controlled current output (in saturation region) in the traditional silicon-based MOSFETs, the saturation current output of GFETs relating to the gate-controls possesses high linearity. This advantage overcomes the inherent nonlinear distortion issues in the existing silicon MOSFET amplifiers and potentially provides a promising scenario for the accurate preamplification of weak analog signals. Besides, the novel circuit configuration and signaling principle may expand the developmental paradigm of analog amplifiers and set groundwork for the development and practicalization of advanced carbon-based nanoelectronic ICs.