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A new method to determine channel mobility model parameters in submicron MOSFET's using measured S-parameters

A new method based on the slope extraction of the total gate charge versus mask gate length from measured S-parameters is developed to determine effective channel mobility model parameters directly from submicron MOSFETs. Since this method does not require a large test device, parasitic capacitance calibration, or the effective channel length measurement, it is simpler and more accurate than traditional methods.