{'fraction_non_alphanumeric': 0.031506849315068496, 'fraction_numerical': 0.0136986301369863, 'mean_word_length': 5.041322314049586, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Unidirectional AlGaN/GaN-on-Si HFETs with reverse blocking drain

We have developed a novel unidirectional AlGaN/GaN-on-Si heterojunction field-effect transistor (HFET) with reverse blocking drain. A recessed Schottky contact was incorporated into a conventional ohmic drain electrode to prevent the undesired reverse current flow while reducing the turn-on voltage in forward current characteristics. The combination of recessed Schottky and ohmic electrodes significantly reduced the turn-on voltage in comparison with a conventional Schottky drain. A turn-on voltage of 0.4 V, an off-state forward breakdown voltage of 615 V, and a reverse blocking drain voltage of −685 V were achieved for the gate-to-drain distance of 12 µm.