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Application Of Molecular Beam Epitaxy To Microwave And Millimeter Wave Devices

Material requirements for various microwave and millimeter wavelength solid state devices are discussed and the applicability of molecular beam exitaxy to growth of the epitaxial layers is presented. The complex doping profiles required for these devices suggest the precise control of epitaxial film thickness, impurity concentration, uniformity, interfaces, alloy composition and surface quality achievable with MBE.