{'fraction_non_alphanumeric': 0.030852994555353903, 'fraction_numerical': 0.014519056261343012, 'mean_word_length': 5.4941176470588236, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Theory of ballistic-electron-emission spectroscopy of NiSi2/Si(111) interfaces.

We discuss theoretical calculations of ballistic-electron-emission-microscopy spectra based in part on a first-principles computation of the transmission across the interfaces. We propose a way of presenting experimental data that highlights the transmission process with respect to contributions from the tunneling distribution. We present a specific application to A- and B-type NiSi 2 /Si(111) interfaces showing a factor three difference between them at low voltages