{'fraction_non_alphanumeric': 0.015406162464985995, 'fraction_numerical': 0.0, 'mean_word_length': 5.327433628318584, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Conditions for the Formation of Ring-Like Distributed Stacking Faults in CZ-Si Wafers

The influence of ramp rate and starting temperature of the ramp on the generation of ring-like distributed stacking faults during wet oxidation of CZ-Si wafers was investigated. These parameters determine the average emission rate of interstitials required to maintain strain-free growth of oxide precipitates. This emission rate correlates well with the density of oxidation induced stacking faults. It indicates that the higher the required emission rate, the more strain is built into the growing oxide precipitates because of insufficient interstitial generation. This results in an increased nucleation of stacking faults.