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Formation of Gallium Nitride at the Interface between Silicon Nitride Encapsulant and Ion Implanted GaAs

GaAs substrates implanted selectively with 100 keV Zn ions to a dose of 5×1014 ions/cm2 were annealed at 700–850°C with an encapsulant of plasma CVD silicon nitride. Transmission electron microscopy revealed that gallium nitride is formed at the interface between the substrate and the encapsulant, and tends to grow epitaxially on (001) (GaAs in the process of 850°C annealing. Gallium nitride was observed in the implanted GaAs area, but not in the unimplanted area. Its formation may be attributable to the presence of the amorphous surface layer produced by ion implantation.