{'fraction_non_alphanumeric': 0.010558069381598794, 'fraction_numerical': 0.016591251885369532, 'mean_word_length': 5.091743119266055, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Growth of Periodic SiO2 Nanostructures Using a 157 nm F2 Laser

Periodic nanostructures on SiO2 films were fabricated by Fresnel diffraction of a mask with a square aperture using the photochemical deposition method. In this method, an F2 laser beam at a low laser fluence simultaneously irradiates a silicone rubber target and a substrate through the mask. The SiO2 nanostructures are photochemically grown according to the intensity distribution at room temperature. The fringe period of the nanostructure formed on the substrate corresponded to the calculated results, and can be reduced up to ∼200 nm by decreasing the distance from the mask to the substrate.