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[Strain effects in Zn1-xMn(x)Se superlattices of II -VI diluted magnetic semiconductors].

We report the strain effects of Zn1-xMn(x)Se superlattices of II -VI diluted magnetic semiconductors by the photoluminescence measurements with compostions x = 0.2, 0.3, 0.4 in the temperature range T = 11K to 300K. The results show that the exciton energy tends to a red shift with the increasing of x due to the strain effects. The distribution of strain in wells and barriers presents a considerable change when their thickness ratio is altered. Photoluminescence spectra peaks as a function of temperature are mainly dominated by the band gap of ZnSe. The temperature coefficient of exciton energy is obtained.