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Growth monitoring of W/Si multilayers by x-ray reflectivity and kinetic ellipsometry

This paper presents a new type of X-ray reflectometer that measures the grazing incidence reflectivity at an energy of 8 keV for angles from 0 - 2.5 degree(s) simultaneously. With an acquisition time of 5 s this allows to analyze the layer growth during a deposition process with a thickness accuracy in the sub-nm range. As a second independent method we are using kinetic and spectroscopic ellipsometry to follow the same deposition process.