{'fraction_non_alphanumeric': 0.014423076923076924, 'fraction_numerical': 0.004807692307692308, 'mean_word_length': 5.457364341085271, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Use of optical metrology techniques for uniformity Control of 3D stacked IC's

This paper describes a study that evaluates various optical metrology techniques for in-line control of the uniformity of 3D stacked structures. Among the 3D process integration flow, key 3D process steps were identified and characterized in order to quantify their specific intra-wafer dispersion signature. The cross correlation between the various intra-wafer process step signatures was then analyzed to verify the data set consistency. The analysis indicated that the measurement data are consistent over the process integration flow, and that a simple model explains the final intra-wafer signature. The results highlight the importance of controlling those specific steps and provide a new alternative for advanced process control implementation.