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Reducing the formation of FIB‐induced FCC layers on Cu‐Zn‐Al austenite

The irradiation effects of thinning a sample of a Cu‐Zn‐Al shape memory alloy to electron transparency by a Ga+ focused ion beam were investigated. This thinning method was compared with conventional electropolishing and Ar+ ion milling. No implanted Ga was detected but surface FCC precipitation was found as a result of the focused ion beam sample preparation. Decreasing the irradiation dose by lowering the energy and current of the Ga+ ions did not lead to a complete disappearance of the FCC structure. The latter could only be removed after gentle Ar+ ion milling of the sample. It was further concluded that the precipitation of the FCC is independent of the crystallographic orientation of the surface. Microsc. Res. Tech. 74:84‐91, 2011. © 2010 Wiley‐Liss, Inc.