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Spin Dependent Pump Probe Reflection Spectroscopy in Bulk InP Crystal

The change of the reflectivity signal is modeled by taking into account of the spin dependent band filling and band gap renormalization effects with the carriers density from 5×1016 /cm3 to 2×1017 /cm3. The calculated results show the reflectivity signal is a very sensitive function of the carrier density. The most interesting feature is that the reflectivity change from photo-bleaching into photo-absorption enhancement is observed with increasing pump photon energy. The theoretical predictions obtained in this work are consistent with the corresponding experiments.