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Total dose radiation induced changes of the floating body effects in the partially depleted SOI NMOS with ultrathin gate oxide

: In this paper, the impacts of total dose radiation on the low-frequency noise and gate induced floating body effects (GIFBEs) for the 130nm partially depleted silicon-on-insulator N-type metal-oxide semiconductors transistor with an ultrathin gate oxide have been investigated. It is shown that the second transconductance gm peak becomes smaller after irradiation when the Lorentzian-like excess noise is more pronounced. The traps induced by irradiation at shallow trench isolation/body and buried-oxide/body interface can act as the recombination centers to increase the source-body diode current, which results in the changes in the excess noise and GIFBEs.