{'fraction_non_alphanumeric': 0.02476780185758514, 'fraction_numerical': 0.0, 'mean_word_length': 5.598639455782313, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Lasing properties of a cholesteric liquid crystal containing aggregation-induced-emission material.

We demonstrate band edge lasing action from a cholesteric liquid crystal (CLC) containing an aggregation-induced-emission (AIE) dye as gain material. AIE materials do not suffer aggregation-caused quenching, have strong resistance to photobleaching, and can show large Stokes shift. The amplified spontaneous emission (ASE) and lasing emission of the dye-doped CLC cell have been characterized, the lasing threshold has been estimated, and its resistance to photobleaching has been measured. AIE materials with their unique properties are especially suitable for acting as gain materials in liquid crystal lasers where defect structures lower the threshold for nanoscale aggregation effects. Our studies have shown that such AIE-dye-doped CLC is capable of lasing action with unusually large Stokes shift at moderate threshold with strong resistance to photobleaching.