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Ion-Implanted Impurity Profiles in Ge Substrates and Amorphous Layer Thickness Formed by Ion Implantation

We evaluated profiles of B, P, As, and Si implanted in Ge substrates by secondary ion mass spectrometry, analyzed the profile data using a quasi-crystal Lindhard-Scharff-Schiott (QCLSS) theory, tuned its parameters, and established a corresponding database based on a tail function. We also predicted Ge, Sb, Ga, In, and Xe profiles in Ge substrates by using the QCLSS theory and also established a corresponding database. We further evaluated the thickness of the amorphous layers formed by ion implantation by transmission electron microscopy and reproduced it in a model by tuning a corresponding parameter of the through dose. Using a profile parameter database and this through dose, we can predict ion implantation profiles and related amorphous layer thicknesses in Ge substrates over a wide range of ion implantation conditions.