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High-quality detectors based on 4H-SiC operated at different temperatures

In this paper we have aimed at the detectors based on the high-quality 4H-SiC epitaxial layer operated at increased temperature. The 4H-SiC is a wide-band-gap semiconductor material with favourable properties for radiation detectors like radiation tolerance and chemical stability. The prepared detectors had an active thickness of 50 µm. The active area was defined by the prepared Ni/Au Schottky contact with a circular shape and a 3.0 mm diameter. The current-voltage characteristics of prepared detectors were measured up to 300 V at different temperatures to determine the operating voltage region. The precise temperature stabilization system was developed to realize detector measurements at different temperatures. Prepared detector structures were tested with a-particles generated by a 238Pu 239Pu2448Cm radioisotopes. The 4H-SiC detector shows high-energy resolution at room and even elevated temperatures and is able to resolve two close energies generated by an alpha particle radiation source.