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Analytical modelling of inverse narrow width effect for narrow channel STI MOSFETs

This paper presents an analytical physics-based model for the width dependence of threshold voltage of nano-scale MOSFETs considering the combined effect of gate-fringing and dopant redistribution. Shallow trench isolated MOSFETs have been considered in the 90 nm and 65 nm technology node. An analytical expression for the trench oxide parasitic capacitance is derived by taking into account the enhanced depletion depth caused due to the gate-fringing field at the trench oxide sidewalls and dopant redistribution in the channel. The short channel effects on the depletion charges have been taken care of while deriving this expression. This is then used to develop the model for a width-dependent threshold voltage shift. The developed model has been validated by comparing the results predicted from the derived model with experimental data as well as simulation data. In addition, the developed model has been compared with a similar model available in the literature. It has been demonstrated that our model predicts more correctly the inverse narrow width effect of nano-scale devices compared to the existing model.