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Deep Electron Traps in Undoped Semi-Insulating GaAs Grown by the Liquid Encapsulated Czochralski Method

Semi-insulating undoped GaAs grown by the liquid encapsulated Czochralski (LEC) method has been studied on deep traps using the photocurrent method, Hall effect measurements and thermally stimulated current method. Obvious differences in the photocurrent spectra and the thermal activation energy for carrier density have been observed between crystals grown from Ga rich melt and As rich melt, in spite of either high resistivity or n-type properties. The reason is conceived to be the existence of two kinds of deep trap: approximate levels from the conduction band are 0.72 eV for Ga rich melt, and 0.86 eV for As rich melt.