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Junction and Bulk Region Characteristics of the Laser Annealed Si Solar Cells

The photovoltaic characteristics of the Q-switched and normal-switched laser annealed Si solar cells are described and compared with those of furnace annealed cells. Implantation was performed with 2×1014 B+, BF2+ and P+ ions/cm2 at 80 keV and 100 keV. The efficiency and open circuit voltage (Voc) of the furnace annealed (FA) cell (800°C) are greater than those of the laser annealed (LA) cells. All cells have no A.R. coating. A efficiency of 6.7% is obtained for the B+ implanted p+/n cell with laser energy density of 1.5 J/cm2. As the junction characteristic, the values of τd (lifetime near the junction) are measured from the decay curve of Voc. The values of diffusion length (L) in the bulk region for the LA and FA (700°–900°C) cells are about 150 µm and 50 µm, respectively. And the values of τd are comparable for both cells. In the laser annealed cells, the values of τd depend on the laser energy density, while those of L do not and keep the values for starting materials.