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Effect of Different TiO 2 Preparation Techniques on the Performance of the Dielectric Bolometer Ba 06 Sr 0.4 TiO 3 as a Distance Sensor

In this study TiO 2 films have been prepared using two different techniques i.e. sol-gel and electron gun evaporation (e-gun) techniques. The films were annealed at 300, 350 and 400 o C in air. The microstructure study using field emission scanning electron microscope and x-ray diffractometer showed nanometer grains size and only the film prepared by sol-gel and annealed at 400 o C has anatase phase while others are amorphous. To study the effect of the films (as buffer layer) onto the dielectric bolometer Ba 0.6 Sr 0.4 TiO 3 as distance sensor, sensors with the configuration of Al/BST/TiO 2 / RuO 2 /SiO 2 /Si were built. Two different measurements i.e. with and without infrared source were carried out to measure the sensitivity and repeatability of the sensors. The sensors which contained sol-gel TiO 2 films gave reading for both type of measurements, indicating that the sensor can act as active and passive sensors. However, the sensors which contained e-gun TiO 2 films only gave responses when the IR source was used, indicating that they can only act as passive sensors. The most sensitive sensor was TiO 2 film prepared by sol gel and annealed at 350 o C. In general sensors which contained TiO 2 films prepared by sol gel showed good repeatability.