{'fraction_non_alphanumeric': 0.02029520295202952, 'fraction_numerical': 0.01107011070110701, 'mean_word_length': 5.464285714285714, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Design Approach and Realization of Integrated Silicon Piezoresistive Pressure Sensors for Wide Application Ranges

Since the early systematic investigations of piezoresistivity in 1954 by Smith (1) or later for instance Tufte et. al. (2), a huge amount of applications benefit from the piezoresistive effect in silicon. The main field of application until today is related to pressure measurements by means of etched silicon membranes, which contain diffused or implanted resistors at their rim connected in a Wheatstone-Bridge configuration.