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Noise spectroscopy of new silicon solar cells with double-sided texture

This paper is intended to present the results of our experimental study of three new types of silicon solar cells G1, G3 and G5. The study is based on an analysis of the device transport and noise characteristics. This analysis shows that better quality (lower voltage noise spectral density) is exhibited by the structure of the groups of G3 specimens, this junction (of a thickness of about 1 um) is etched away from the rear side.