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Electron Assisted Variable Range Hopping in Strongly Correlated 2D Electron Systems

We have investigated the temperature dependence of longitudinal resistivity of high mobility two dimensional (2D) electron systems in the strongly correlated regime (r s ∼ 4-5). The area of the samples was relatively small, typically 2 x 2 μm 2 . The resistivity followed an Efros-Shklovskii (ES)-type variable range hopping (VRH) behavior, Q(T) = Q 0 exp (T 0 /T) p , with p = 0.5. We found that in this regime, the pre-factor Q 0 increases by discrete steps of h/2e 2 as the carrier concentration (n) is increased, starting from Q 0 = h/e 2 at the lowest values of n close to the localization. The jumps in Q 0 were associated with an oscillation in the activation energy defined by To. We have discussed the observation of such quantized, temperature-independent resistivity pre-factors in the framework of electron assisted VRH.