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Effects of thermal strain on the optical properties of heteroepitaxial ZnTe.

Optical measurements have been used to study the biaxial tensile strain in heteroepitaxial ZnTe gronw by molecular-beam epitaxy on both GaAs and GaSb substrates, and its effect on the low-temperature photoluminescence (PL) spectrum of the material. The observed strain (0.92×10 -3 for ZnTe/GaAs and 0.45×10 -3 for ZnTe/GaSb) agrees with that expected for differential thermal contraction from the growth temperature to low temperature, based on the difference in thermal expansion coefficients