{'fraction_non_alphanumeric': 0.03616636528028933, 'fraction_numerical': 0.02531645569620253, 'mean_word_length': 5.155555555555556, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Reflection anisotropy spectroscopy study of the near surface electric field in low-temperature grown GaAs (001)

We have evaluated an “effective depletion width” of ⩽45 A and the sign (n-type/upward band bending) of the near surface electric field in low-temperature grown GaAs (001) using the optical method of reflection anisotropy spectroscopy in the vicinity of the spin-orbit split E1, E1+Δ1 optical features. Our results provide evidence that surface Fermi level pinning occurs for air exposed (001) surfaces of undoped low temperature grown GaAs.