標題: Subgap State Engineering Using Nitrogen Incorporation to Improve Reliability of Amorphous InGaZnO Thin-Film Transistors in Various Stressing Conditions
作者: Li, GongTan
Zhan, Runze
Yang, Bo-Ru
Liu, Chuan
Dong, ChengYuan
Lee, Chia-Yu
Wu, Yuan-Chun
Lu, Po-Yen
Deng, ShaoZhi
Shieh, Han-Ping D.
Xu, NingSheng
Department of Photonics
Institute of Display
關鍵字: InGaZnO;nitrogen incorporation;reliability;TFTs
公開日期: Nov-2016
摘要: Instability of amorphous InGaZnO thin-film transistors (a-IGZO TFTs) remains an obstacle for commercialization. Here, we systematically discuss the effect of nitrogen incorporation on a-IGZO TFT stability and developed Ar/O-2/N-2 atmosphere to improve the stability under stressing in different conditions. Based on X-ray photoelectron spectrometer results, it is revealed that the positive gate bias stress (PGBS) stability is significantly improved due to microscopically passivated metal-oxygen bonds. Yet, the negative gate bias and light stress (NBLS) stability is seriously deteriorated with heavily nitrogen incorporation probably due to the bandgap narrowing effect. By optimizing a mixed O-2/N-2 atmosphere, the subgap states are finely tuned to afford optimal performance and stability. The developed IGZO TFTs exhibit mobility (12.67 cm(2)/Vs), small shift of threshold voltage under PGBS (reduced by 64% as compared with the pristine a-IGZO TFTs), and good negative gate bias stability and with NBLS stability as well.
URI: http://dx.doi.org/10.1109/TED.2016.2608970
ISSN: 0018-9383
DOI: 10.1109/TED.2016.2608970
Volume: 63
Issue: 11
起始頁: 4309
結束頁: 4314
Appears in Collections:Articles