{'fraction_non_alphanumeric': 0.019580419580419582, 'fraction_numerical': 0.0, 'mean_word_length': 5.445945945945946, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Simulation of dielectric relaxation and conduction of non-ferroelectric perovskite thin films

Many applications for dielectric and ferroelectric perovskite thin films were proposed and developed in recent years. Examples are integrated electroceramic devices such as high-density memories, integrated capacitors, pyroelectric IR sensors and piezoelectric microactuators. Since fast dielectric response, low leakage currents, and long life-times are important for the quality and reliability of devices, it is necessary to study the signal response of the films in the time regime from nanoseconds for fast operation to weeks or months in life test experiments. To get further insight into thin films, the simulation of their electrical properties is a very helpful tool. It gives us the opportunity to change parameters of the sample, such as the high-frequency capacitance or the leakage resistance, as well as parameters of the experiment, e.g. the voltage-step amplitude or the slope of a voltage-ramp and to study the influence of any change without the necessity of the experimental procedure. The simulation provides an aid for anticipating electrical tests into regimes which are difficult to access. Most important, the simulation permits the separation of response contributions which cannot be separated experimentally, and, thus, it helps to understand the relationships between film parameters and physical processes.