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Donor 1s-2p+/- transitions in doped GaAs-Ga1-xAlxAs quantum wells: Effects of electric and magnetic fields.

The effects of both electric and magnetic fields on the transition energies between the 1s-like ground state and 2p+ excited states of hydrogenic donors in a GaAs-Gal Al As quantum well are studied. The effective-mass approximation within a variational scheme is adopted with electric and magnetic fields considered in the growth direction of the heterostructure, and treated directly in the variational calculation. Results for the finite-barrier potential are obtained as functions of both applied fields and for different GaAs-Ga, „Al As quantum-well thicknesses, and compared with available infrared magnetospectroscopy measurements on donor-doped quantum wells. Theoretical results indicate that a detailed study of the intradonor absorption spectra together with a proper consideration of the impurity-doping profile are necessary for a qualitative understanding of the experimental results.