{'fraction_non_alphanumeric': 0.03042198233562316, 'fraction_numerical': 0.022571148184494603, 'mean_word_length': 4.862068965517241, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Effects of Low Temperature O 2 Treatment on the Electrical Properties of Amorphous LaAlO 3 Films Made by Atomic Layer Deposition

Amorphous LaAlO3 films were deposited on hydrogen-terminated silicon substrates by atomic layer deposition (ALD) at 300 o C. The precursors were lanthanum tris(N,N’-diisopropylformamidinate), trimethylaluminum (TMA) and water. Capacitance-voltage measurements made on ALD MoN/LaAlO3/Si stacks showed humps especially at low frequencies. They were effectively removed by O2 treatment at 300 o C without affecting the dielectric constant (κ~15). The O2 treatment can be carried out either after deposition of a LaAlO3 film, or after each ALD cycle. The O2 treatment also lowered the leakage current from 80 mA cm to 1 mA cm for EOT = 1.3 nm. This indicates that oxygen vacancies are the main defects in as-deposited LaAlO3. Oxygen treated LaAlO3 is one of the best candidates for future high-κ dielectric material due to its low leakage, low defect density and abrupt interface with silicon.