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Total dose, displacement damage, and single event effects in the radiation hardened CMOS APS HAS2

Experimental results of several radiation test campaigns performed on the HAS2 CMOS imager are presented. The radiation testing includes Cobalt-60 total ionizing dose at low and high dose rate, proton and electron displacement damage, proton induced single event transient, and heavy ion single event effect. HAS2 electro-optical performances have been characterized during irradiation at low and room temperature, and after annealing at low, room and high temperature. The gathered data are consistent with radiation hardness properties of the HAS2 sensor. The most significant radiation drift coefficients have been assessed for dark current and electrical offsets. Transient signal under proton flux has been characterized at various proton energies. Robustness to single event latch-up has been demonstrated up to 79 MeV.cm2/mg.