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A Heat Conduction Structure for the Etching Process of MEMS Devices with Support Anchors

In this paper, a heat conduction structure (HCS) is designed to conduct the concentrated heat on the etched wafer in the etching process of MEMS devices with support anchors. During the reactive ion etching process, the anchor layer is the main heat conduction path in vacuum. The length of heat conduction path in different locations varies with the distance from anchors. Therefore, the uneven contribution of the anchors leads to the local heat concentration, which worsens the etching homogeneity and causes the over-etching. The HCS also consumes reactive ion and then reduces etching defect of the sidewalls. FE simulations and experiments have verified the effectiveness of the structure. The average over- etching value decreases from O.87μm to O.20μm and the profile defect of sidewalls is significantly improved as observed by Scanning Electron Microscope.