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Preparation and Characterization of ZnS Thin Films Using Chemical Bath Deposition Method: Effects of Deposition Time and Thermal Treatment

The ZnS thin films high transmittance (more than 89 %) were prepared using the chemical bath deposition method. The film thickness increased linearly from 50 to 115 nm when the deposition time increased from 20 to 60 minutes. Beyond 60 minutes, the film growth rate slowed. The films were amorphous before annealing and there were some oxygen (about 10-20 %) in the film. A spike of (111) plane of the cubic ZnS phase appeared at 28.91o on the XRD pattern after the ZnS film was annealed at 400oC for 420 minutes under vacuum. The oxygen content reduced and the film thickness increased in the annealed samples. Uniform crystals formed in the film, resulting in a high grain boundary density, leading to transmittance loss from light scattering. We found the peak transmittance (~ 100 %) shifted to the infrared region in the as-deposited and annealed ZnS films. The resistivity of the film was slightly decreased due to the decrease in the Zn(OH)2 content in the film with longer deposition time. Deposition time (min) Element (%) O1s (%)