{'fraction_non_alphanumeric': 0.034578146611341634, 'fraction_numerical': 0.027662517289073305, 'mean_word_length': 5.407079646017699, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Crystal Growth and Properties of Quinary Chalcopyrite Compounds

The quinary compound CuGaxIn1-xS2ySe2(1-y) was prepared as a single crystal by means of a vapor-phase chemical-transport procedure. Complete solid solutions were obtained within the entire range of compositions (0\leqslantx\leqslant1;0\leqslanty\leqslant1). The crystallographic structure was seen to be that of chalcopyrite. The electrical resistivity and the Hall mobility were investigated in several samples with different composition obtaining values within the intervals 10-1∼102 Ω · cm and 5∼10 cm2V-1s-1. The results of optical investigations aimed at correlating the solid-solution composition and the width of the forbidden energy gap are reported.