{'fraction_non_alphanumeric': 0.009302325581395349, 'fraction_numerical': 0.002325581395348837, 'mean_word_length': 5.53030303030303, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Circuit simulator models for the diode and IGBT with full temperature dependent features

The problems faced in generating analytical models for the IGBT and power diode are devising correct equations and determining realistic boundary conditions, especially for 2D features, while ensuring convergence of the models. These issues are addressed in this paper in relation to the temperature dependent modelling of IGBTs and diodes.