{'fraction_non_alphanumeric': 0.023494860499265784, 'fraction_numerical': 0.0, 'mean_word_length': 5.5576923076923075, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Implementation of Single-Electron Transistor with Resistive Gate

We have fabricated and measured a resistively coupled single electron transistor (R-SET). In our implementation, a chromium thin-film resistive gate was connected directly to a mesoscopic island formed between two ultrasmall Al/AlOx/Al tunnel junctions. The transistor was fabricated by electron beam lithography using the suspended bridge technique. We have measured the current-voltage-gate voltage dependences of the R-SET and observed a characteristic Coulomb blockade pattern. Our simulations based on the orthodox theory of single electron tunneling show good qualitative agreement with the experimental data.