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Influence of Grain Boundary Configuration in Aluminum Films on Abrupt Resistance Changes during Electromigration

Resistance changes accompanying electromigration were measured in aluminum thin-film interconnections with three different types of grain boundary (GB) configuration. Abrupt and oscillatory changes in resistance were observed and they were related to the number of grain-boundary triple points (GBTPs) in the sample and the connections between them by grain boundaries. This result supports the model that abrupt resistance change occurs when an aggregate of vacancies with considerable size makes a transition to the void at a certain GBTP.