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Generation of Paramagnetic Point Defects in Silicon Dioxide Films on Silicon Through Electron Injection and Exposure to Ionizing Radiation*

We have explored the point defects generated in metal-oxide-silicon devices when the oxides are exposed to high or low (oxide) field injection of electrons and when the oxides are exposed to ionizing radiation. We have identified the center primarily responsible for deep hole traps and have also established that a single point defect is primarily responsible for interface state generation in all cases. We observe a third paramagnetic center which may be involved in electron trapping.