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Crystal growth and characterization of vanadium-doped and undoped CdSSe

Undoped and doped CdS0.8 Se0.2 crystals were grown by physical vapor transport (PVT). The selected dopant was vanadium at a nominal concentration of 150 ppm creating for photorefractive effect. The as-grown crystal has a large crystal size, 1.1 cm in diameter and 6 cm in length, with a medium resistivity of 104 - 107 (Omega) -cm. The results from low temperature photoluminescence (PL) show that the undoped crystal has only one emission band at 2.31 eV and its phonon replicas. The vanadium doped crystal not only show the similar emission band but also has an additional broad band center at 1.95 eV due to the effect of doping. Low temperature (16 K) and room temperature IR transmittance spectra of vanadium doped crystal revealed a broad absorption band between 0.8 and 1.3 eV which may be due to vanadium dopant. Etch pitch density (EPD) measurements were performed, and the results showed EPD in the range of 104/cm2 for both types of crystals. Precipitate/inclusion were also found in both crystal, and their distribution patterns may be related to gravity-induced convection during growth process.