{'fraction_non_alphanumeric': 0.03299856527977044, 'fraction_numerical': 0.011477761836441894, 'mean_word_length': 5.017241379310345, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Resistive switching memory effects in p-type hydrogen-treated CuO nanowire

Nanowire (NW)-based resistive switching device offers an ideal platform to develop a nanoscale-memristive device for next-generation memory and computing. The present study developed a p-type hydrogen-treated CuO NW memory device by using hydrogen annealing. The hydrogen-treated CuO NW, which is mainly composed of Cu2O, exhibited a resistive switching non-volatile memory effect and demonstrated low electric-field device operation with ∼3 × 106 V/m and high ON/OFF ratio up to 107. The hole conduction path formation/rapture mechanism based on the redox reaction of CuO was proposed as a resistive switching mechanism.