{'fraction_non_alphanumeric': 0.01859504132231405, 'fraction_numerical': 0.0030991735537190084, 'mean_word_length': 5.776223776223776, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Si and SiC power MOSFET characterization and comparison

This paper characterizes and compares Si and SiC power MOSFETs in high temperature conditions. The superior advantages of SiC power device, including conductivity, breakdown voltage, high switching speed and high temperature operating potentials, are discussed based on the semiconductor physics properties, including bandgap energy, critical electric field, saturation velocity and thermal conductivity. In characterization of the power devices, the device threshold voltage, on-resistance and leakage current are measured and compared at different temperature levels. The operating characteristics variations are investigated to reveal the high temperature effects on the devices. A DC-DC boost converter with high temperature capability is built and tested in a thermal chamber at 150 °C. The testing results are used to demonstrate the potentials of SiC based power converter in high temperature conditions.