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Analysis of the temperature dependence of electron mobility in CdGeAs2 single crystals

We have performed an analysis of the experimental temperature dependences of the Hall mobility in CdGeAs2 single crystals with degenerate electron gas. The Boltzmann equation has been solved numerically in the effective-mass and isotropic-continuum approximations taking into account the complicated character of the polar phonon spectrum. A good agreement with the experimental data on drift mobility at T = 77 K has been obtained with the electron scattering, taking into account intrinsic singly charged Coulomb defects. At room temperature, agreement between theory and experiment cannot be achieved without considering the electron–plasmon scattering.