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III‐Nitrides semiconductor compounds for microwave devices

This paper reports on the LP‐MOCVD growth optimisation of GaAlN/GaN heterostructures grown on sapphire and silicon carbide substrates for HEMT applications, and on the device performances obtained with these structures. The devices performances related to the GaAlN/GaN HEMT structures grown on sapphire and silicon carbide have confirmed the high potentiality of GaN and related alloys for high power microwave transistors. Load–Pull measurements performed at 2 GHz on devices related to GaAlN/GaN/Al2O3 HEMT structures, have shown a remarkably high output power density (4.4 W/mm) and absolute power level (3.2 W for 1 mm devices). These power level results for devices on sapphire substrates measured on wafer, are well in agreement with the international state of the art.