{'fraction_non_alphanumeric': 0.02724177071509648, 'fraction_numerical': 0.015891032917139614, 'mean_word_length': 5.25531914893617, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
The simulation of monolithic vertical integration of VCSEL and RCE photodiode

In this paper, we present a monolithic vertical integration of a 850nm wavelength AlGaAs/GaAs-based vertical-cavity surface-emitting laser (VCSEL) and a 810nm wavelength AlGaAs/GaAs-based resonant cavity enhanced photodetector(RCE-PD). The receiving and transmitting of optical signals on two different wavelengths can be realized simultaneously by the single transceiving chip. Simulations show that, the VCSEL can reach a threshold current of 1mA, with a maximum slope efficiency of 0.66W/A, while the RCE PD has a quantum efficiency of 90.24% at the same time. And the two integrated devices are fully decoupled both on the electrical properties and the optical properties. The proposed transceiving chip are focused on improving the performance of optical interconnect applications in data centers.