{'fraction_non_alphanumeric': 0.03827160493827161, 'fraction_numerical': 0.0, 'mean_word_length': 4.83453237410072, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Design of Integrated Amorphous-Silicon Thin-Film Transistor Gate Driver

A thorough study on the gate driver integrated with hydrogenated amorphous-silicon thin-film transistors (a-Si:H TFTs) for active-matrix flat-panel display (AM-FPD) is carried out in this work. The single stage circuit of the a-Si:H gate driver consists of input, pull-up, pull-down, and low-level holding units. The operation principle of the driver is described in detail. The subtle static and dynamic characteristics of the a-Si:H TFT based circuit are analyzed systematically for the first time. The long term reliability issue is also addressed. Design equations for determining the device sizes of the circuit are derived. The TFT-LCD panels integrated with the designed gate driver are fabricated to verify the design efficiency.