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Large‐area, catalyst‐free heteroepitaxy of InAs nanowires on Si by MOVPE

In this paper, we show the results of experiments of InAs nanowire (NW) growth on (111)‐oriented Si wafers. The NWs, grown at 620 °C by metal–organic vapor‐phase epitaxy, are vertically aligned and ∼30 nm in diameter. Their structural properties are studied by transmission electron microscopy, evidencing a polytypic character, and the vibrational properties by Raman spectroscopy. An assessment of their electrical transport properties is carried out by measuring back‐gated, single InAs NW field‐effect transistors. The absence of a catalyst ensures the compatibility of the NW growth process with current CMOS technology.