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Energy transfer and 1.54 μm emission in amorphous silicon nitride films

Er-doped amorphous silicon nitride films with various Si concentrations (Er:SiNx) were fabricated by reactive magnetron cosputtering followed by thermal annealing. The effects of Si concentrations and annealing temperatures were investigated in relation to Er emission and excitation processes. Efficient excitation of Er ions was demonstrated within a broad energy spectrum and attributed to disorder-induced localized transitions in amorphous Er:SiNx. A systematic optimization of the 1.54 μm emission was performed and a fundamental trade-off was discovered between Er excitation and emission efficiency due to excess Si incorporation. These results provide an alternative approach for the engineering of sensitized Si-based light sources and lasers.