{'fraction_non_alphanumeric': 0.013546798029556651, 'fraction_numerical': 0.0, 'mean_word_length': 5.609756097560975, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
High frequency ion sources for ion implanters-theoretical and practical comparison

High frequency plasma sources have been widely used in various fields such as nuclear physics research and semiconductor device fabrications. Although the application of this source technology for ion implanters has been relatively limited, they present a significant advantage in certain areas compared with conventional DC arc discharge sources. Source life time and beam purity are noted as the major potential features. This paper discusses the characteristics of two major types of high frequency sources, radio frequency (RF) and microwave sources, in terms of the nature of the plasma generated, and predicts advantages and disadvantages of each for application to ion implanters used in modern semiconductor fabrication.