{'fraction_non_alphanumeric': 0.0657439446366782, 'fraction_numerical': 0.02191464821222607, 'mean_word_length': 4.6, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 1, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
E-Band Ultra-Low-Noise (4.5 dB) and High-Power (27 dBm) GaN T/R Front-End MMIC

A high-performance, GaN-based analog front-end monolithic microwave integrated circuit (MMIC) for E-band communication applications is presented in this paper. The MMIC design successfully incorporates a low-noise amplifier (LNA), a power amplifier (PA) and a single-pole double-throw (SPDT) T/R switch into a single integrated chip, fabricated in the Fraunhofer IAF GaN high-electron-mobility transistor (HEMT) technology. Across 75–86 GHz, the measurements in the receive path exhibit a record-low noise figure (NF) of 4.5 dB in average, while the transmit path provides an output power of >27 dBm with a power-added-efficiency (PAE) of 7-10% between 71–86 GHz. To the best of authors' knowledge, this is the first demonstration of a GaN front-end MMIC operating at E-band frequencies.