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Exposure optimization for multi-bit quanta image sensor with ultra-small well capacity

The effect of ultra-small well capacity is serverely impacting the performance of image sensors fabricated in advanced complementary metal-oxide-semiconductor (CMOS) technologies. Therefore, a new sensing paradigm is required to effectively design pixels at the nanometer scale. In this paper, we present a noise and quantization model for the multi-bit quanta image sensor (Mb-QIS). Using the model to analyze the Mb-QIS, we found that an optimal exposure exists that can minimize the error in photon counting. This result is useful for the design and operation of Mb-QIS based image acquisition systems.