{'fraction_non_alphanumeric': 0.015525114155251141, 'fraction_numerical': 0.0027397260273972603, 'mean_word_length': 5.122905027932961, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Modeling and simulation of silicon wafer backside grinding process

TSV (through silicon via) is regarded as a key technology for 2.5D and 3D electronic packaging. And the manufacturing of the through silicon interposer is very challenge and costly. In the backside process of interposer, grinding is considered as the most promising technology to control wafer's surface roughness and surface defect. In this paper, according to the grinding process, a mathematical model is established. According to the model, MATLAB is used to simulate and predict the grinding marks and the distance between two adjacent grinding lines during the backside grinding process. The grinding marks of the half contact grinding model and full contact grinding model with different wheel rotation speed and wafer rotation speed are presented. And the relationship between two adjacent grinding lines and the ratio of wafer rotation speed and wheel rotation speed is predicted. The experiments are also carried out to verify the proposed model. The results of the experiments agree well with the simulation results.