{'fraction_non_alphanumeric': 0.019332161687170474, 'fraction_numerical': 0.015817223198594025, 'mean_word_length': 4.7, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Fabrication process of a TSV interposer for radio frequency chip with integrated passive devices

This paper presents the fabrication process of a TSV interposer for RF chip with integrated passive devices. The passive devices fabricated by lift-off process of thin film include a thin-film resistor and three parallel-plate capacitors. The whole area of the interposer is 5.7 mm × 5mm and the thickness of interposer is only about 160um. Compared to traditional RF systems with discrete passive devices integrated on PCB, the area of the interposer is only about 1/27.