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Nanomorphology of ZnSe on patterned substrate

We have grown high quality oriented nano particles of zinc selenide (ZnSe) on patterned gallium arsenide (GaAs) substrates. We have developed and used silver and gold based templates with domains of 35 μm. We observed that the films grew epitaxially on the non-patterned portion of GaAs wafers with 4° miscut from (001). Several samples of thickness ranging from 5 μm to 1 mm thickness of ZnSe were grown in a vertical closed tube using the temperature gradient as the driving force. The quality of the samples was analyzed by X-ray and morphology was studied by SEM, FIB, and AFM and by etching the films. The rocking curve showed that the FWHM values for different films were in the range of 300-350 arcs second. We observed that film on (001) portion of the template grew with smooth morphology but morphology was slightly different on the templates. The grown film had strong (111) peak also on the patterned substrate in addition to the (001) peak observed for the film on unpatterned substrate.