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Field Emission Characteristics of an Oxidized Porous Polysilicon Field Emitter Using Al2O3 Layer as a Passivation

The field emission characteristics of an oxidized porous polysilicon were investigated with different Al2O3/Ti/Pt thickness. The Al2O3/Ti/Pt emitter showed stable electron emission characteristic compared with the conventional Ti/Pt electrode. The Al2O3 layer efficiently blocked the diffusion of emitter metal, which resulted in more reliable emission characteristics. Al2O3/Ti/Pt electrode thickness at 2 nm/2 nm/7 nm showed the highest emission efficiency of 0.37% at Vps = 17 V. The investigated field emission life time of samples also demonstrated their stability over 40 minutes.