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S‐Type Negative Differential Resistance in Semiconducting Transition‐Metal Dichalcogenides

Current‐controlled (also known as “S‐type”) negative differential resistance (NDR) is of crucial importance to many emerging applications including neuromorphic computing and high‐density memristors integration. However, the experimental realization of S‐type NDR based on conventional mechanisms poses demanding requirements on materials, which greatly limits their potential applications. Here, it is experimentally identified that semiconducting transition‐metal dichalcogenides (TMDs) can host a bipolar S‐type NDR devices. Theoretical simulations indicate that the origin of the NDR in these devices arises from a thermal feedback mechanism. Furthermore, the potential applications of TMD‐based S‐type NDR device in signal processing and neuromorphic electronics are demonstrated.