{'fraction_non_alphanumeric': 0.024305555555555556, 'fraction_numerical': 0.0011574074074074073, 'mean_word_length': 4.924657534246576, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Investigation of anomalous leakage current in mesa-isolated SOI MOSFETs

The mechanism of an anomalous leakage current in mesa-isolated SOI NMOSFETs in the short-channel region was analyzed. The enhanced diffusion of the source-drain impurities was observed in the mesa edge region by Energy Dispersive X-ray Spectroscopy (EDX) analysis. Moreover, using high-resolution TEM observation, it was found that there were no crystalline defects in the edge region. The frequency of leakage currents in short-channel MOSFETs was higher than that of long-channel MOSFETs. The level of leakage current was not changed by the gate voltage and back gate voltage, and the activation energy of the leakage current was almost 0 eV. According to these results, it is concluded that the origin of the anomalous leakage current is the enhanced diffusion of source-drain impurities.