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TEM and chemical preferential etching analysis of protected FET leakage failure

Transmission electron microscopy (TEM) and chemical preferential etching are failure analysis techniques commonly applied to visualize and characterize silicon crystalline defect. Both techniques are applied in this case study of a protected field-effect transistor (FET) that encounter output leakage failure. Upon fault isolation, a complete analysis through TEM and preferential etching using Wright etch solution are performed for further understanding of the failure mechanism and risk assessment.