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An Electron Beam Exposure System (VL-R1)

The system design and performance of a newly developed electron beam exposure system are reported. The basic operation is of a raster scan over a narrow field with a continuously moving stage. The system is capable of practical making of master masks and reticles including composite patterns. A pattern size as large as 105×105 dots is managed by a data compaction method and by a continuous data flow method from a magnetic disk to a DMA. LSI patterns of 2 µm geometry are delineated at a speed of 2 cm2/min. The electron charge density as high as 15 µC/cm2 at 20 kV was achieved.