{'fraction_non_alphanumeric': 0.029005524861878452, 'fraction_numerical': 0.012430939226519336, 'mean_word_length': 4.616279069767442, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Improving the luminous efficiency of gallium nitride-based light-emitting diodes using Ag nanograting structure

Abstract. In order to improve the traditional gallium nitride (GaN)-light-emitting diode (LED) luminous efficiency, a structure of the GaN-LED is designed based on the local field enhancement of surface plasmon (SP). The principle of improving LED luminous properties using the SP features is described in detail. The factors that affect the light extraction efficiency of this LED structure are simulated with the COMSOL software. The thickness of p-GaN layer, the thickness of indium tin oxide (ITO) layer, the grating period T, the duty ratio r, as well as the shape of the interface between p-GaN and ITO are studied. The normalized radiated powers, the normalized absorbed powers, and the electric field distribution of this structure under different structure parameters have been achieved. The results show that when the thickness of p-GaN layer is 110 nm, the thickness of ITO buffer layer is 120 nm, the period T is 370 nm, the duty ratio is 0.5, and the value of D1  /  T is 0.6. The luminous intensity of LED is higher than that of the traditional LED nearly 43 times and is nearly 36 times higher than that of the Ag nanosphere structure, and SPs can be coupled with the active layer effectively to improve the luminous efficiency of LED, providing a theoretical guide for the preparation of high-performance GaN-LED chips.