{'fraction_non_alphanumeric': 0.01809598741148702, 'fraction_numerical': 0.012588512981904013, 'mean_word_length': 5.523076923076923, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Investigation of fabricating the films in the phase transition regime from amorphous to microcrystalline by MWECR CVD system

The microcrystalline silicon films in the phase transition regime from amorphous to microcrystalline were fabricated by microwave electron-cyclotron-resonance chemical vapor deposition (MWECR CVD) system. The influence of deposition temperature and deposition pressure on the structure and electrical properties of microcrystalline silicon films was investigated. It is shown that the films in the phase transition regime from amorphous to microcrystalline are easier to fabricate under the condition of lower deposition pressure and higher substrate temperature. For example, the films in the phase transition regime whose crystalline volume fraction is about 30 %, were deposited at substrate temperature of 170 °C and deposition pressure of 0.7 Pa. The films' μτ product is about the order of magnitude of 10-5, whose magnitude is two order higher than that of amorphous silicon films, and their photosensitivity is about 103~104. Therefore, having both high stability and excellent optoelectric properties of the high-quality and device grade film, it is suitable to fabricate the intrinsic materials for amorphous silicon based solar cells.