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High-Temperature Crystallization of Amorphous Silicon on a Molybdenum Substrate

Polycrystalline silicon (poly-Si) is an widely studied material, for use in high quality thin film transistor active layer. High temperature process is not used for glass substrate because of its low softening temperature below 450°C. However, high temperature crystallization has an advantage to get high crystalline volume fraction (Xc). In this paper, the a-Si deposited by hot-wire CVD was crystallized at a temperature between 750°C to 1050°C within 2 min as to induce high current over 48A between electrodes. The film grown at a condition of crystallization temperature of 850°C for 2 min exhibits the crystalline volume fraction of 80.9%, the preferential growth of (220) orientation, and the activation energy of 0.22eV. Moreover, high temperature poly-Si using a Mo substrate has special advantage of crystallization such as high crystallinity, simple, low cost and high temperature endurance.