{'fraction_non_alphanumeric': 0.013142174432497013, 'fraction_numerical': 0.013142174432497013, 'mean_word_length': 4.86013986013986, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Design of a TG Based High Frequency Rectifier at 45 nm for RF Energy Harvesting Application

Energy harvesting plays a very vital role in modern communication systems and high frequency rectifier is essentially the core of such a system. There happens to be many challenges in design of a rectifier at high frequency and enhancement of percentage conversion efficiency (PCE) is prime challenge. This paper presents a transmission gate (TG) based design of a high frequency rectifier for RF applications which achieves a PCE to 80% at -2dBm in its single stage realization and is highest in class efficiency as compared to reported literatures. The frequency response shows the performance over a wideband and it works in 953 MHz GSM band. Also this performance is achieved with minimal number of devices and with 110nW power dissipation.