{'fraction_non_alphanumeric': 0.02180232558139535, 'fraction_numerical': 0.0, 'mean_word_length': 5.321100917431193, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Generation and annihilation of positive and negative ion‐depleted region in soda‐lime silicate glass

The combination experiments of ac and dc (as the thermally stimulated polarization current) suggest that, by the dc process, there appeared the positive and negative ion‐depleted region at the interface between glass bulk and the positive ion‐depleted region near the anode. This may be the ionic analog for a p‐n junction under reverse bias of a semiconductor. The relaxation in polarized glass would take place by the annihilation of the positive and negative ion‐depleted region by back‐diffusion of oxygen ions from the positive ion‐depleted region and of sodium ions from the bulk.