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AlN Sputtered Film Properties Prepared at Low Gas Pressures by Facing Target System

Several properties of sputtered AlN films prepared in N2 gas by planar magnetron sputtering with facing targets were investigated. Highly c-axis-oriented films with columnar structure were obtained at the pressure range of 10-3 Torr of N2 gas. Film degradations such as the decrease of the degree of c-axis orientation, film coloring, and film peeling were also observed at lower gas pressures below 1×10-3 Torr. From the results of optical transmittance and film composition estimation by energy-dispersion X-ray spectroscopy, these film degradation were related to the excess of N atoms in the film growth process.