{'fraction_non_alphanumeric': 0.016018306636155607, 'fraction_numerical': 0.002288329519450801, 'mean_word_length': 5.340579710144928, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
A Dedicated Backscattered Electron Detector for High Speed Imaging and Defect Inspection

Pattern analysis and defect detection is an important field of quality control in modern semiconductor production. High device densities, small structures and increasingly complicated process operations demand reliable and fast wafer inspection. At the same time the influence on the specimen should be kept to a minimum to ensure damage-free process control. Defect and pattern analysis algorithms are capable of fulfilling this demand. However, the capabilities of these software tools depend on fast detection systems providing high speed and high quality images. Here, we show a Backscattered-Electron (BSE) detector dedicated to imaging with signal rise times down to 10 ns in superior quality. This allows ultra fast detection resulting in minimal exposure time of the specimen.