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Thermal deactivation of lifetime‐ limiting grown‐in point defects in n‐type Czochralski silicon wafers

In this study, we uncover a recombination‐active grown‐in defect reducing the minority carrier lifetime of Czochralski grown n‐type silicon from 5 ms to below 2 ms. We also demonstrate that the defect can be de‐activated by annealing between 300 °C and 360 °C. Our experimental findings suggest that vacancy‐related pairs incorporated during ingot growth may be responsible for the decreased minority carrier lifetime. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)