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Time-Efficient Characterization of Time-Dependent Gate Oxide Breakdwon Using Tunable Ramp Voltage Stress (TRVS) Method for Automotive Applications

Reliability test efficiency and accuracy are both important to technology development. In this study, we develop a new gate oxide reliability test method, called tunable ramp voltage stress (TRVS). It can perform a quick gate oxide reliability test like breakdown voltage (VBD) though a ramp voltage stress (RVS) method, and also receive the data accuracy similar to conventional TDDB, which is a constant voltage stress (CVS) method. Moreover, we exploit this method to enable large-sample-size measurement. More samples imply lower projection error. This greatly benefits TDDB lifetime projection of devices for automotive applications.