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Simulation on NBTI Degradation Due to Discrete Interface Traps Considering Local Mobility Model and Its Statistical Effects

Mobility degradation due to the interface trap generated by the NBTI stress is simulated considering the discrete nature of the interface trap. We evaluate the relationship between threshold voltage shift (ΔVth) and drain current degradation (ΔID) including the mobility degradation due to the traps. The results can be used, for example, to predict ΔVth in the On-the- fly NBTI measurement. Moreover, the statistical modeling for the degradation of ID due to the spatial distribution of the interface trap is investigated.