{'fraction_non_alphanumeric': 0.020356234096692113, 'fraction_numerical': 0.001272264631043257, 'mean_word_length': 5.296, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Quantum instantaneous current: application to nanoMOSFETs switched at very-high frequency

The modeling of nanoscale transistors at THz frequencies is discussed. The simulation of these devices at such very high frequencies can not rely on the assumption that the temporal variations inside the device are slower than any electron kinetic time (i.e. the quasi-static approximation). The study presented here is twofold. First, a novel formalism for quantum transport under oscillating conditions is applied to discuss high-frequency transconductance of nanoscale MOSFET. Second, the importance of the displacement current is analyzed via the solution of a 3D Poisson equation. Preliminary results seem to suggest important effects due to the small number of electrons inside the system.