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Solution Growth of Silicon Carbide Using the Vertical Bridgman Method

A solution growth process combined of vertical Bridgman and vertical gradient freeze in a metal free Si‐C melt at growth temperatures of 2300 °C is developed. The influence of the growth parameters for different growth steps and of the surface polarity of the seed is investigated. The layers are evaluated by Raman spectroscopy, scanning electron microscopy and optical profilometry. The growth of high quality SiC layers with a diameter of 30 mm and a layer thickness up to 200 µm is achieved.