{'fraction_non_alphanumeric': 0.024081115335868188, 'fraction_numerical': 0.031685678073510776, 'mean_word_length': 5.528925619834711, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Effective suppression of the high temperature DC performance degradation of AlInN/GaN HEMTs by back barrier

Performance degradation is an urgent obstacle for the practical high temperature applications of Al0.83In0.17N/GaN high electron mobility transistors (HEMTs). The present work investigates theoretically the feasibility of suppressing the high temperature performance degradation of Al0.83In0.17N/GaN HEMTs by inserting an In0.06Ga0.94N back barrier. The simulation results show that inserting a 3‐nm InGaN back barrier can substantially decrease the off‐state leakage current and increase the saturate drain current and the transconductance, no matter at room temperature or at 400 K, and meanwhile, the performance degradation of the HEMT at 400 K is also effectively suppressed.