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Static and dynamic study in high-voltage 4H-SiC PiN rectifiers

Designing and fabrication of 4kV, 20A 4H-SiC PiN diodes with JTE junction termination structure have been investigated in this paper. A bevel mesa structure and a single-zone junction termination extension (JTE) have been employed to achieve the target voltage. Finally, an optimized mesa structure without sub-trench (mesa height of 2.2 µm and mesa angle of 20°) has been experimentally demonstrated. A forward voltage drop of 3.5 V at 100 A/cm2 are obtained from the fabricated diodes. Furthermore, capacitance and reverse recovery switching performance are presented. The value of capacitance under 800V reverse voltage is about 48pF. Subsequently, the reverse recovery of the fabricated PiN rectifiers at different forward current and different switching rates is demonstrated.