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Selective Wet-Etching of GESI in Multi-Layer GESI/SI Stacks

In this paper, the channel release process of stacked gate-all-around (GAA) nanosheet (NS) devices fabricated based on the epitaxial scheme is investigated extensively. The effects of annealing temperatures, thicknesses of the GeSi layers and liquid nitrogen processing on the wet selective etching of GeSi in multi-layer GeSi/Si samples are mainly studied. It is found that the corrosion rate of the GeSi in GeSi/Si stacks samples first decreases and then increases with the increasement of rapid thermal annealing (RTA) temperatures, and the corrosion rate is the slowest at 600 ° C. In addition, the thicker the epitaxial GeSi, the faster the corrosion rate. Furthermore, we found that the corrosion rate of the samples after liquid nitrogen processing treatment was faster than that without treatment. The research provides a good reference significance for the design and manufacture of advanced stacked GAA Si NS devices.