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The role of the temperature on the scattering mechanisms limiting the electron mobility in metal-oxide-semiconductor field-effect-transistors fabricated on (110) silicon-oriented wafers

The scattering mechanisms limiting the electron mobility in Si(110) MOSFETs have been studied in function of the temperature. They have been compared to the ones limiting the electron mobility in Si(100) MOSFETs. It appeared that the lower electron mobility encountered for the (110) orientation was coming from a stronger limitation due to the sole Coulomb and surface roughness scatterings. Indeed, the phonon-limited mobility have been found similar for both orientations. Furthermore, contrary to what it is commonly assumed, the surface roughness scattering mechanisms are not independent of the temperature. Like the Coulomb-limited mobility, the surface roughness-limited mobility will greatly vary at high temperature while they will reach a constant value when the temperature will be reduced.