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STUDY OF SIMULATION MOBILITY MODELS FOR ELECTRONIC DEVICES

Numeric device simulation becomes each time more essential for technologic evolution, as it permits previous evaluation between incremental geometric and parametric variations before device implementation. The possibility of observing internal physical variables such electric potential and charge distribution confronted to the terminal current-voltage results, allows a better understanding of physical phenomena, and therefore contributes significantly to technologic evolution. In the present preliminary study, an exploration of some mobility models is shown for a SOI nMOS transistor. The default parameters are firstly adopted and then some mobility model parameters of ATLAS device simulator are changed for comparison.