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The Spectrum of Current Oscillations of Gunn Diodes with the Impact Ionization in Moving Domains

The results of the numerical simulation of the GaAs Gunn diode with electric field strengths, sufficient for development of the impact ionization in the moving high-field domains, are presented. The form of current oscillations and frequency spectrums is in good agreement with experimentally measured data. It is shown that the Gunn diode operating under conditions of the impact ionization may be used as a source of wide spectrum UHF-noise