{'fraction_non_alphanumeric': 0.04540540540540541, 'fraction_numerical': 0.025945945945945945, 'mean_word_length': 5.132450331125828, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
P‐12: Enhanced Pentacene OTFTs with Suspended Source/Drain Electrode

We have proposed and fabricated a new triisopropylsilyl (TIPS) pentacene organic thin‐film transistor (OTFT) by employing suspended source/drain (SSD) electrode which successfully improves the electrical properties such as field‐effect mobility, on/off ratio, threshold voltage (VTH) and subthreshold slope compared to conventional bottom‐contact OTFTs. The SSD electrode was fabricated by using Cr/Au double layer where the Cr was used as a sacrificial layer. By completely etching the Cr layer in the active area, a suspended Au source/drain structure is constructed forming a top‐contact‐like geometry. The field‐effect mobility of ink‐jet printed TIPS pentacene OTFT increased from 0.007 cm2/Vs to 0.066 cm2/Vs, on/off ratio increased from 104 to 106, VTH decreased from +9 V to −3 V and subthreshold slope decreased from 4.5 V/decade to 0.9 V/decade.