{'fraction_non_alphanumeric': 0.018018018018018018, 'fraction_numerical': 0.001287001287001287, 'mean_word_length': 5.274193548387097, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Effect of X-ray irradiation on bottom-gate monolayer graphene transistors

In this paper we discuss the effects of x-ray irradiation on monolayer graphene transistor characteristics. We report monolayer graphene field effect transistors (GFETs) under x-ray irradiation with major shift in dirac point on exposure to x-ray irradiation. The irradiation causes defects in graphene and changes in GFET characteristics that can be utilized towards a radiation sensor. The current work identifies the effects of x-ray radiation on current voltage characteristics owing to the scattering with electrons and breaking of sp2 bonds. Marginal change in hole mobility and significant decrease in electron mobility is reported for monolayer graphene FETs post exposure to x-ray irradiation.