{'fraction_non_alphanumeric': 0.02610441767068273, 'fraction_numerical': 0.028112449799196786, 'mean_word_length': 5.3164556962025316, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Synethesis of VO2 Nanowire and Observation of Metal–Insulator Transition

We have fabricated crystalline nanowires of VO2 using vanadium metal deposition. A nanowire synthesized at 650 °C shows semiconducting behavior and a nanowire synthesized at 670 °C exhibits the first-order metal–insulator transition which is not the one-dimensional a property. The temperature coefficient of resistance in the semiconducting nanowire is 7.06%/K at 300 K, which is higher than that of a commercial bolometer.