{'fraction_non_alphanumeric': 0.02301255230125523, 'fraction_numerical': 0.02510460251046025, 'mean_word_length': 4.505747126436781, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Spatial Distribution of 1/f Noise Source

The 1/f noise of an n-type silicon resistor has been studied under conditions ranging from accumulation to depletion at 300K. The experimental results are interpreted in terms of a bulk phenomenon and are characterized by Hooge's empirical 1/f noise parameter α with values between 10-7 and 10-5. The α-value for surface conduction at strong accumulation can be at least one order of magnitude larger than the value for bulk conduction.