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Measurement of the geometrical transverse magnetoresistance effect in n-type GaAs at high temperatures

Measurements of transverse magnetoresistance are reported on two Gunn diodes at temperatures between 300 and 800 K. The magnetoresistance mobility μm is found to agree closely with Hall mobilities measured on similar epitaxial GaAs layers (Blood 1972). Differences in slope between μm and 1/R (R being the diode resistance) over the range 300-500 K are attributed to a combination of contact resistance and scattering factor effects. Between 500 and 700 K the 1/R curve increases in slope due to electron transfer between the Γ and X conduction-band minima, while at temperatures above 700 K intrinsic conduction results in a rapid increase in 1/R. Above 600 K the mobility curve shows an increase in slope which is attributed to intervalley transfer, the effect being quantified by comparison with a theoretical calculation of mobility for the Γ minimum due to Rode and Knight (1971). The standard expression for Hall mobility due to two-band conduction yields too small a correction factor and it is necessary to include the effect of truncating the Γ electron distribution at ΔE (=EX-EΓ). The combined effect is in approximate agreement with experiment.