{'fraction_non_alphanumeric': 0.03666361136571952, 'fraction_numerical': 0.013748854262144821, 'mean_word_length': 4.808510638297872, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Effect of Induced Strain Due to Lattice Mismatch between MgyZn1-yS Cladding Layers and CdxZn1-xS/ZnS Quantum Wells on Effective Band Gap Energy in CdxZn1-xS/ZnS/MgyZn1-yS Separate-Confinement Heterostructures

We calculate the effect of the induced strain due to lattice mismatch between CdxZn1-xS/ZnS quantum wells (QWs) and MgyZn1-yS cladding layers on the effective band gap energy in CdxZn1-xS/ZnS/MgyZn1-yS separate-confinement heterostructures (SCHs). The effective band gap energy in the CdxZn1-xS/ZnS/MgyZn1-yS SCHs increases with increasing Mg content (y) for wider wells. The variation in effective band gap energy reflects the peak energy of optical gain spectra. The effect of the induced strain due to MgyZn1-yS cladding layers on the threshold carrier concentration for the production of a positive optical gain is very weak. The lattice-matching condition for the MgyZn1-yS cladding layers with respect to the CdxZn1-xS/ZnS MQWs is estimated. The induced strain due to the lattice mismatch between MgyZn1-yS cladding layers and CdxZn1-xS/ZnS MQWs is suppressed by adjusting y.