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Ultraviolet resonant Raman scattering in InGaN films

Ultraviolet Raman scattering spectra of In x Ga 1- x N films with different In compositions were investigated using 325nm laser line. For photon energy above the energy gap, strong enhanced 2A 1 (LO)phonon scattering lines were observed. Four 2LO peaks shift from twice the energy of the first-order LO peak, to the high energy end and the shifts increase with In contents in the samples. It is attributed to the multiple resonance resulting from intraband-Frhlich interaction. The composition dependence of LO phonon mode frequency and line shape was analysed. The phase separation was observed in Raman spectra and compared with the data of X-ray diffraction. Furthermore, the E 2 phonon combination mode of In x Ga 1- x N was observed at about 1310cm -1 .