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Integrated High Voltage Active Quenching Circuit in 150nm CMOS Technology

An integrated high voltage active quenching circuit (AQC) in a 150 nm high voltage CMOS technology is presented. The circuit is designed for off-chip single-photon avalanche diodes (SPAD) with parasitic capacitance up to 5 pF. With the high voltage lateral double-diffused MOSFETs (LDMOS) the circuit is able to apply excess bias voltages up to 35 V. The excess bias voltage for the SPAD is adjustable from 5 V up to 35 V and retains a constant quenching time of 2.2 ns at a SPAD capacitance of 5 pF.