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Design and Integration of Layered MoS2/GaN van der Waals Heterostructure for Wide Spectral Detection and Enhanced Photoresponse.

Molybdenum disulfide (MoS2) as a typical two-dimensional (2D) transition metal dichalcogenides exhibits great potential applications for next generation nanoelectronics such as photodetectors. However, most MoS2-based photodetectors hold obvious disadvantages including a narrow spectral response in visible region, the poor photoresponsivity and slow response speed. Here, for the first time, we report the design of a two-dimensional MoS2/GaN van der Waals (vdWs) heterostructure photodetector consisting of few-layer p-type MoS2 and very thin n-type GaN flakes. Thanks to the good crystal quality of 2D-GaN flake and the built-in electric field in the interface depletion region of MoS2/GaN p-n junction, photogenerated carriers can be rapidly separated and more excitons are collected by electrodes towards the high photoresponsivity of 328 A/W and a fast response time of 400 ms under the illumination of 532 nm light, which is 7 times faster than pristine MoS2 flake. Additionally, the response spectrum of the photodetector is also broadened to UV region with a high photoresponsivity of 27.1 A/W and fast response time of 300 ms after integrating with 2D-GaN flake, exhibiting advantageous synergetic effect. These excellent performances render MoS2/GaN vdWs heterostructure photodetectors as promising and competitive candidates for next-generation optoelectronic devices.