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Photoinduced Infra-red Absorption and Luminescence in Indium-doped Silicon

Silicon, doped with indium and phosphorus to 1016 cm-3 and well compensated, was illuminated to neutralize the indium acceptors. The time-dependent neutral acceptor concentration was measured by the infra-red absorption of the valence band-indium transition. The decay of the absorption, after interrupting the exciting illumination, was nearly independent of the temperature between 28 K and 80 K. The photoluminescence spectrum shows that phonon-less conduction band-to-indium transitions dominate also at 28 K. The luminescence decay confirms that the recombination is a bimolecular process.