{'fraction_non_alphanumeric': 0.02003338898163606, 'fraction_numerical': 0.0, 'mean_word_length': 6.142857142857143, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Simulation of Nanoscale InAlAs/InGaAs High Electron Mobility Transistors Based on Drift-Diffusion Model Incorporating an Effective Potential

We applied an effective potential method to drift-diffusion (DD)-based simulation of the threshold voltage characteristics in nanoscale InAlAs/InGaAs high electron mobility transistors (HEMTs). Good agreement between simulated and measured threshold voltage shifts versus aspect ratio was obtained. Simulations revealed that the threshold voltage increases with decreasing InGaAs channel thickness which can be explained by quantum theory for quantum wells.