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High-Frequency Dephasing and Hot Electron Effects in Quasi-1D Wires

Transport phenomena in small semiconductor structures are briefly reviewed including the effect of d.c. and high-frequency fields. Experiments concerning weak localization, universal conductance fluctuations, boundary scattering, and Shubnikov-de-Haas oscillations in InGaAs/InP and n+-GaAs are reported. Non-equilibrium effects in these phenomena due to the application of pulsed d.c. as well as microwave and millimeterwave fields are studied.