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Improved Electrical and Optical Properties of Ultra-Thin Tin Doped Indium Oxide (ITO) Thin Films by a 3-Dimensionally Confined Magnetron Sputtering Source

The ultra-thin tin doped crystalline indium oxide (ITO) films (≤50 nm) were successfully deposited by a 3-dimensionally confined magnetron sputtering source (L-3DMS) at the temperature lower than 100 °C. The resistivity and the mobility of the ultra-thin ITO films deposited at
 a low processing temperature were about ~5 × 10−4 Ω · cm and >30 cm2/Vs, respectively, for the thickness of 30 nm. The high quality of the ultra-thin ITO films deposited by L-3DMS is believed to be related to the improved crystallinity with
 oxygen vacancies of the ITO films by high density plasma and low discharge voltage of the L-3DMS which enables the formation of a crystalline structure a low processing temperature.