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Facile Fabrication of P(Electrodeposition)/N(Solvothermal) 2D‐WS
 2
 ‐Homojunction Based High Performance Photo Responsive, Strain Modulated Piezo‐Phototronic Diode

In this work, we demonstrate a low cost, cleanroom free fabrication approach of 2D (2-dimensional) WS2 p-n homojunction as a piezo phototronic diode. The p-type WS2 was deposited over the flexible ITO/PET substrate using electrodeposition technique and the n-type WS2 was synthesized using very simple and cost-effective solvothermal technique. XRD and Raman studies confirmed the formation of both p-type and n-type WS 2 with 3R and 2H structure holding the vibration modes of WS2.To examine the photoresponsive properties the diode was irradiated with visible light and an increase in 12% of the photo current was observed in the reverse bias with the illumination power intensity of 8.25 mW/cm2. Further, when the diode was subjected to 0.98% of tensile strain the current was increased up to 91.6%. This enhanced response can be attributed to the piezo-phototronic effect exhibited by the few layers WS 2 structure, which leads to the modulation of the potential at the p-n junction interface leading to the increase in the carrier concentration of electrons flowing through the device. The p-n homojunction diode exhibited excellent responsivity and detectivity values of 44.8 A/W and 11.2×1012 Jones respectively with an illumination intensity of 1.26 mW/cm2 and with a very low tensile strain of 0.98% which are higher than those of devices fabricated using sophisticated techniques which find numerous applications in flexible-electronics.