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Effect of Light Irradiation on Galvanic Corrosion of Metal Gate

Integration of new metal gate materials and high-k dielectrics is required to achieve high-performance and low-stand-by-power applications for the 32-nm-node LSI devices and beyond. Wet processes for removing high-k film involve the risk of enhanced galvanic corrosion at the gate electrode level. We found that the galvanic corrosion of the metal gate in front-end-of-line (FEOL) was markedly enhanced by room light irradiation. The interception of light irradiation during the wet processes in FEOL as well as the wet process in back-end-of-line (BEOL) is also required.