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Evaluation of Channel Modulation in In2O3/(Bi,La)4Ti3O12 Ferroelectric-Gate Thin Film Transistors by Capacitance-Voltage Measurements

Channel formation in In2O3/(Bi,La)4Ti3O12 ferroelectri-gate thin film transistors is discussed by means of capacitance-voltage characteristics. When the negative gate bias is applied, only the overlap regions are responsible for the capacitance, because the channel region is off and the source and drain regions are isolated. On the other hand, it is shown that the capacitance between source/drain and gate agrees with that of source and gate at the positive gate bias and that the measured capacitance covers the whole channel area in addition to the source and drain overlap regions.