{'fraction_non_alphanumeric': 0.028328611898016998, 'fraction_numerical': 0.0169971671388102, 'mean_word_length': 5.256637168141593, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Growth Optimization of Low-Pressure Chemical Vapor Deposition Silicon Nitride Film

We present a systematic investigation on growth parameters (the ratio of reactive gases and total flow rate) of silicon nitride (StNx) films by Low-Pressure Chemical Vapor Deposition (LPCVD). The post-growth annealing condition would influence the bonds and electrical properties of the SiNx. When the concentration of SiH2Cl2 and NH3 is 20sccm/250sccm and with post-growth annealing in O2 at 650°C, the electrical performance of SiNx film is the best, which is evaluated by capacitance-voltage, dielectric breakdown and reliability test. Increasing the total flow rate of gas source can improve the reliability of device.