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Dilute nitride GaInNAs and GaInNAsSb for solar cell applications

The dilute nitride GaInNAs(Sb) alloy system is challenging to grow and defects can cause short diffusion lengths and high background doping densities. Despite these difficulties, extremely high cell efficiencies have recently been achieved in multi-junction solar cells utilising 1 eV GaInNAs absorber layers. This study aims to highlight the tradeoffs between the electrical and optical characteristics related to the performance of GaInNAs(Sb) diode structures grown by molecular beam epitaxy , with band gaps ranging from 0.90 to 1.04 eV. Post-growth annealing was necessary in some instances to reduce the background doping and dark current densities. The incorporation of Sb into GaInNAs has enabled the possibility of producing a dilute nitride cell with a band gap lower than 0.80 eV, although with an increased dark current.