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Triaxially uniform high-quality AlxGa(1-x)N (x∽50%) nanowires on template free sapphire substrate.

We have demonstrated the growth of high-quality AlxGa(1-x)N (x~50%) nanowires for the first time on the sapphire substrate without using GaN nanowires as the template by Plasma-Assisted Molecular Beam Epitaxy. Our newly developed process elucidates that depending on the substrate temperature and V/III ratio an AlGaN network is formed on sapphire substrate prior to the NWs growth. We find that the ledges of this kinked shaped network act as nucleation sites for the NW growth. The present observations suggest that availability of nucleation sites and higher substrate temperature during growth are the key parameters for the growth of homogeneous AlGaN NWs on the sapphire substrates. Energy Dispersive X-ray Spectroscopy, High-Resolution Transmission Electron Microscopy, Raman Spectroscopy, X-ray diffraction and Scanning Electron Microscopy analysis show that AlGaN NWs exhibit near-atomic scale compositional uniformity along the length as well as across the diameter.