{'fraction_non_alphanumeric': 0.012024048096192385, 'fraction_numerical': 0.0, 'mean_word_length': 5.572368421052632, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 1, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Development of electrical test setup for microfluidic field effect transistor

This paper reports on the development of the electrical test setup for microfluidic field effect transistor (FET). Testing of the device commences during the fabrication process where various resistivity, grown layer thickness and other parameters are measured. However, these limited measurements do not give insights towards the final device performance. The final test is purely electrical and therefore a high current circuit to manually test the transistor characteristic of the microfluidic FET has been designed. The IV characteristic of the known metal oxide semiconductor field effect transistor (MOSFET) that is available in the market is the basis of the circuit design which is then used to characterize the microfluidic FET. Experimental results reveal the electrical responses from the test setup are consistent with the MOSFET behavior and an alternative method for the microfluidic FET characterization.