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High performance resonant tunneling diode oscillators as terahertz sources

This paper presents a series of monolithic microwave integrated circuit (MMIC) resonant tunneling diode (RTD) oscillators. The oscillator circuit topology employs two InGaAs/AlAs RTDs in parallel and each device is biased individually. The oscillators operate at 125/156/206/308 GHz with −1.7/−3.3/−14.6/−4.8 dBm output power. With improved epitaxial layer structures and oscillator designs, it is expected that the output power will reach several milliwatts. This work shows the promising potential of RTD oscillators as terahertz (THz) sources for high speed wireless communications, etc.