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Single Cell Element of Chalcogenide Random Access Memory Fabricated with the Focused Ion Beam Method

A single cell element of chalcogenide random access memory was fabricated by using the focused ion beam method. The contact size between the Ge2Sb2Te5 phase change film and the top electrode film is about 600 nm (diameter) and the contact area is calculated to be 0.28 μm2. The thickness of the phase change film is 83 nm. The current–voltage characteristics of the cell element are studied using the home-made current–voltage tester in our laboratory. The minimum threshold current of about 0.6 mA is obtained.