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10- to 16-μm broadband quantum well infrared photodetector

A broad-band infrared detector, sensitive over a 10 - 16 micrometer spectral range, based on GaAs/AlxGa1-xAs quantum wells grown by molecular beam epitaxy, has been demonstrated. Wavelength broadening of (Delta) (lambda) /(lambda) p approximately 42% is observed to be about a 400% increase compared to a typical bound-to- quasibound quantum well infrared photodetector (QWIP). In this device structure, which is different from typical QWIP device structures, two different gain mechanisms associated with photocurrent electrons and dark current electrons were observed and explained. Even with broader response, D* approximately 1 X 1010 cm(root)Hz/W at T equals 55 K is comparable to regular QWIPs with similar cutoff wavelengths.