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Comparative Analysis of InGaAs/GaAs Quantum Dots Produced by Various Epitaxial Techniques

We present the results on the formation and micro-photoluminescence studies of In0.63Ga0.37As/GaAs quantum dots grown by metal-organic vapour-phase epitaxy and molecular-beam epitaxy by Stranski-Krastanow growth mode. The structure with single layer of quantum dots grown by the metal-organic vapour-phase epitaxy demonstrated a higher peak/integral photoluminescence intensity, as well as a smaller half-width of the photoluminescence spectrum from quantum dots in comparison with the structure with single layer of quantum dots grown by the molecular-beam epitaxy. Efficient low-temperature photoluminescence near 990 nm with a full width at half maximum of about 60 meV has been demonstrated for metal-organic vapour-phase epitaxy structure. The obtained results can be used for the formation of compact vertical micro cavity optically pumped laser arrays required for neuromorphic computation.