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Estimated threshold base current and light power output of a transistor laser with InGaAs quantum well in GaAs base

We have solved the continuity equation for electrons in the base of an InGaP–GaAs–GaAs heterojunction bipolar transistor laser (TL) in which the position of an InGaAs quantum well (QW) in GaAs base is variable. The injected minority carrier is related to the two-dimensional carrier in QW via virtual states (VSs). The values for optical gain in the QW are obtained by considering subband energies and envelope functions in presence of strain, polarization dependent momentum matrix element and Lorentzian lineshape. Relating the gain with threshold current and the latter with base current via VS current, the threshold base current and power output from the TL are estimated. Good agreement between the calculated and the experimental threshold base currents is obtained and the match for light output power is satisfactory within experimental uncertainty. Our calculated charge distribution in the base shows similar behaviour as in the charge control analysis of the experimental data.