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A method for reducing notching and electron shading damage in a continuous wave ECR metal etcher

The effects of the etching gas chemistry, the RF bias frequency and the ECR position in pattern-dependent charging were studied using an ECR plasma etch tool. Lowering the RF bias frequency and/or employing a gas chemistry containing an element with small mass such as hydrogen reduced electron shading damage and notching. Notching was suppressed by increasing the distance between the ECR point and the wafer. Furthermore, it is effective to employ an etching gas that contains elements of small atomic weight for reduction of electron shading damage by using continuous wave (CW) high-density plasmas.