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Influence of Laser Radiation on Movement of Dislocations in Silicon Single Crystals

The behavior of linear defects in n-and p-type silicon, generated by laser radiation is studied for pulse energy density 417 – 1083 mJ/cm2. The features of the nondestructive and destructive effects of the laser pulse on the surface defects formation of the semiconductor crystals are revealed. The formation and movement of dislocations in the crater region and the development of micro cracks, accompanied by acoustic waves are revealed.