{'fraction_non_alphanumeric': 0.02418096723868955, 'fraction_numerical': 0.0031201248049922, 'mean_word_length': 5.647668393782383, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Visualizing Structural Transitions and Electric Potentials via 4DSTEM

The ability to determine structural and electric potential dynamics at high spatial resolution is critical for understanding energy storage and semiconductor device properties. Scanning transmission electron microscopy (STEM) provides a unique opportunity to perform a large number of different measurements such as imaging, diffraction and spectroscopy simultaneously, down to the sub-atomic dimensions [1]. In this work, we will see the use of a four-dimensional STEM experiment to probe light elements in beam-sensitive energy materials and measure electric fields across GaAs-based p-n junctions. In recent times the acquisition of four-dimensional datasets, also known as the 4D-STEM technique, has become available using direct electron detectors. The 4D-STEM approach utilizes a fast pixelated sensor acquiring diffraction patterns at each scan point, which allows us to detect structural changes and electric fields at a high spatial resolution. In this topic, we will see the phase transition region using aberration-corrected STEM combined with the pixelated detector (pnCCD). Selecting specific regions in the convergent beam electron diffraction (CBED) patterns and calculating the so-called virtual