{'fraction_non_alphanumeric': 0.0392638036809816, 'fraction_numerical': 0.0036809815950920245, 'mean_word_length': 4.44, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Non-recombination injection mode

A new type of injection regime is considered – non-recombination one, which can be realized in the forward direction of the current in structures of the p-n-n+ type under conditions of opposite directions of ambipolar diffusion and drift of non-equilibrium carriers. This is possible only if the accumulation at the n-n+ junction is stronger than the injection through the p-n junction, i.e., the concentration of carriers at the boundary of the n-base with the n-n+ junction is higher than their concentration at the boundary of the n-base with the p-n junction. In this mode, the dependences of the current on the voltage of the type J ~ V, and then J ~ V2 appear. Experimentally, such a behavior of the current-voltage characteristic is observed for the Al–Al2O3–CdTe structure.