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Mobility gap in intermediate valent TmSe

The infrared optical conductivity of the intermediate-valence compound TmSe reveals clear signatures for hybridization of light d- and heavy f-electronic states with m* ≈ 1.6m0 and m* ≈ 16m0, respectively. At moderate and high temperatures, the metal-like character of the heavy carriers dominates the low-frequency response while at low temperatures (TN < T < 100 K) a gap-like feature is observed in the conductivity spectra below 10 meV which is assigned to be a mobility gap due to localization of electrons on local Kondo singlets, rather than a hybridization gap in the density of states.