{'fraction_non_alphanumeric': 0.027576197387518143, 'fraction_numerical': 0.02177068214804064, 'mean_word_length': 5.160714285714286, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Broadband resistive-inductive compensated GaN-HEMT single-FET switch

In this contribution an analytical approach to the design of constant-isolation microwave resistive-inductive compensated switch operating from DC to 30GHz is presented. Simulated and measured performance of a GaN HEMT single-FET switch cell topology and that of a complete SPDT using the proposed methodology are presented to demonstrate the approach feasibility and effectiveness. The single-FET switch is featured by an isolation of 5.4±0.5dB over the DC-30GHz band. The resulting SPDT, operating over 2–18GHz band, is featured by 2.7dB insertion loss and isolation better than 25dB all over the operating bandwidth.