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Phonons and internal stresses in IV-IV and III-V semiconductors: The planar bond-charge model.

We fit phonon-dispersion relations of IV-IV (Si, Ge, and a-Sn) and III-V (GaAs, AlSb, and GaSb) semiconductor crystals along [100] and [111] directions by means of a planar bond-charge model. Eigenvectors at the X and L high-symmetry points are predicted using the fitted parameters for the III-V crystals. For GaAs, results agree fairly well with ab initio calculations and experimental data. Using the mass approximation we deduce the phonon-dispersion curves of AlAs from those of GaAs, finding good agreement with ab initio calculations