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Complete formation sequence of InAs quantum dots on lattice-mismatched InGaAs/GaAs substrates

The complete formation sequence of InAs quantum dots (QDs) on lattice-mismatched InGaAs cross-hatch substrate has been identified. The InAs QDs sequentially form at the following locations: the dislocation free end, the dislocation T-section, the dislocation intersection, the [1–10] dislocation line, the [110] dislocation line and the flat area. Different surface energies at these locations give rise to QD formation at different effective thicknesses and times.