{'fraction_non_alphanumeric': 0.016008537886873, 'fraction_numerical': 0.0032017075773745998, 'mean_word_length': 4.89937106918239, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
A TSV test structure for simultaneously detecting resistive open and bridge defects in 3D-ICs

After the 3D stacking process, TSV-based 3D-ICs are required to perform the post-bond testing in order to detect TSV faults or device functional defects. To detect the resistive open and bridge defects, various effective TSV testing techniques have been studied. At an early stage of TSV manufacturing, it is important to consider that the TSV testing is required not only determining whether each TSV is defective or non-defective, but also digitizing the fault degree into the TSV resistance value during the silicon debugging. In this paper, we propose a new TSV test structure for simultaneously detecting the resistive open and bridge defects with supporting the debug mode to analysis the characteristic of the specific TSV. It can highly reduce the test time by detecting TSV defects at the same time without compromising test quality.