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Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films

The emerging field of ferroelectric hafnium zirconium oxide has garnered increased attention recently for its wide array of applications from nonvolatile memory and transistor devices to nanoelectromechanical transducers. Atomic layer deposition is one of the preferred techniques for the fabrication of hafnium zirconium oxide thin films, with a standard choice of oxidizer being either O3 or H2O. In this study, we explore various oxidizing conditions and report on the in situ treatment of hydrogen plasma after every atomic layer during the deposition of hafnium zirconium oxide to increase the virgin state polarization. Three different oxidization methods were utilized during the fabrication of the Hf0.5Zr0.5O2 films: H2O, O2 plasma, and O2 plasma followed by H2 plasma. The 10 and 8 nm thick films oxidized with only O2 plasma result in initially anti-ferroelectric films. Comparatively, the addition of H2 plasma after every O2 plasma step results in films with strong ferroelectric behavior. Peak shifting of the GIXRD pattern suggests that the sequential O2-H2 plasma films tend more to the orthorhombic phase as compared to the O2 plasma and H2O oxidized films.