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Behavior of Excess Te Atoms in Undoped p-type CdTe Annealed under Te Vapor Pressures

The number of Te atoms and hole concentrations in undoped p-type CdTe quenched into water after annealing were investigated as functions of annealing temperature and Te2 vapor pressure. The number of Te atoms diffused from the annealing atmosphere into CdTe increased with increasing annealing temperature and Te2 vapor pressure, but decreased with additional increasing Cd vapor pressure. Te precipitates were observed by a scanning electron microscope in CdTe with diffused Te atoms more than approximately 1×1019 cm-3. The number of Te precipitates was increased with increasing Te vapor pressure, but was decreased by adding Cd vapor pressure. It was found that the precipitates resulted in a decrease in the concentration of the holes in p-type CdTe.