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Effect of body doping on double-gate MOSFET characteristics

This paper presents a systematic study of the body doping effect on symmetric double-gate (DG) MOSFETs. Two-dimensional simulation tools are used to investigate the doping effect on long-channel and short-channel devices. Both n-type and p-type doping are studied. For long-channel devices, the threshold voltage shift due to body doping is proportional to the total dopant when the device is fully depleted. Thus, it is straightforward to include the doping effect in compact models. When the device is partially depleted, in addition to the threshold voltage shift, the subthreshold slope can be degraded. For short-channel devices, improvement of the short-channel effects is observed when the body doping concentration is close to the level that makes the device partially depleted.