{'fraction_non_alphanumeric': 0.02188782489740082, 'fraction_numerical': 0.0, 'mean_word_length': 5.535714285714286, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Characterization of switching parameters and multilevel capability in HfOx/AlOx bi-layer RRAM devices

HfOx/AlOx bi-layer RRAM devices were fabricated with the atomic layer deposition (ALD) method. Compared with the single-layer HfOx devices, the bi-layer devices showed less variation of the switching voltages and resistances. Inspired by the fact that varying reset stop voltage in a DC sweep can achieve multilevel high resistance state, two equivalent pulse programming schemes were proposed: one linearly increases the reset pulse amplitudes; the other exponentially increases the reset pulse width. The transient current response waveform measurement suggests the former scheme is a more energy efficient programming method.