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Annealing Behaviour of Stress in Sb-Implanted Si

Annealing behaviour of stress in silicon implanted with high dose Sb ions is investigated by X-ray topographic observations following each step of the sequential annealing. The result shows that there are three annealing stages with differing stresses: (I) compressive stress in the process from as-implanted state to the 500°C annealing, (II) tensile stress at early stage of the 600°C annealing, and (III) compressive stress after annealing at 600°C for a long time and until the stress is annealed out at 900°C. The anomalous changes at about 600°C are discussed. The occurrence of the tensile stress in stage II is attributed to the lateral contraction of the implanted region during the regrowth of amorphous silicon produced by the implantation.