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A Low-noise Low-offset Op Amp in 0.35μm CMOS Process

This paper describes a new structure for a low-noise, low-offset, high-speed operational amplifier with a bandwidth up to 10 MHz, designed in a 0.35 μm CMOS process. Design strategies are discussed for minimizing both thermal noise and flicker noise. Special techniques are investigated to maximize the unity gain bandwidth. A digital trimming method is explored to correct for a 10 mV input-referred offset.