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Discharging Current Transient Spectroscopy for Evaluating Traps in Insulators

A novel method [discharging current transient spectroscopy (DCTS)] is developed for evaluating traps in insulators, and is then applied to silicon nitride ( SiNx ) films prepared by direct photo-chemical vapor deposition. A single-level trap on the order of 1016 cm-3 with an emission rate (e p) of around 0.3 s-1 and energetically distributed traps on the order of 1017 cm-3·eV-1 with e p<0.1 s-1 are obtained at room temperature.