{'fraction_non_alphanumeric': 0.013223140495867768, 'fraction_numerical': 0.008264462809917356, 'mean_word_length': 5.446808510638298, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Electrical Transport Properties of GaSb Grown by Molecular Beam Epitaxy

The electrical transport property of GaSb are analyzed, both experimentally and theoretically. It is demonstrated that the mobility of GaSb is limited not only by high unintentionally doped impurity concentration, but also by high compensation ratio. Hall-effect measurement are made between 300 and 20 K on several undoped GaSb samples. It is found that the electrical properties of GaSb epilayers strong depend on growth temperature, and the impurity conductivity dominated the conduction mechanism over a large temperature range.