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Characterization of N type Si doped ZnO and ZnO thin films deposited by RF magnetron sputtering

Si doped Zinc oxide (Si-ZnO) thin films were deposited on glass substrates by RF magnetron co-sputtering Phosphorus doped Si and ZnO. The effect of different n-Si/ZnO wattage ratios, pressures, and oxygen percentage in Ar atmosphere on the optical and electrical properties of the films was investigated. A comparison between the Si-ZnO and ZnO thin film deposited under the same conditions was made in order to determine the tradeoff between the resistivity and optical transparency as the wattage ratio of Si/ZnO changed. The best N-Si doped ZnO film achieved a minimum resistivity of 3.06 × 10−3 ohm cm using 2 mT in an argon atmosphere while maintaining greater than 80% transmission in the visible and near infrared spectrum.