{'fraction_non_alphanumeric': 0.048818897637795275, 'fraction_numerical': 0.031496062992125984, 'mean_word_length': 4.435897435897436, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Characterization of the two-dimensional electron gas in Al/sub x/Ga/sub 1-x/N/GaN heterostructures with two subbands occupied

Magnetotransport properties of the two-dimensional electron gas (2DEG) in Al/sub x/Ga/sub 1-x/N/GaN heterostructures have been investigated. We extrapolate that the second subband in the triangular quantum well at the heterointerface starts to be populated at a 2DEG concentration of about 7.23 /spl times/ 10/sup 12/ cm/sup -1/. The quantum scattering time related to the first subband is obtained as 0.144-0.146 ps for the heterostructures. Intersubband scattering is also observed in the heterostructures.