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In0.53Ga0.47As/InP Modulation-Doped Heterostructures Grown by Liquid-Phase Epitaxy

In this paper we present the first report of the study of the characteristics of In0.53Gs0.47As/InP modulation-doped heterostructures grown by liquid-phase epitaxy. Electrical properties were studied by Hall and Shubnikov-de Haas Measurements. A series of doping levels in the InP layer was used to investigate the dependences of mobility and sub-band configuration on sheet carrier density. Mobility enhancements were observed at low temperatures according to Hall measurements. Enhanced electron mobilities were as high as 62000, 60200 and 7410 cm2/Vs at 10, 77 and 300 K, respectively. These are comparable to those obtained by other epitaxial techniques, which indicates that liquid-phase epitaxy is capable of growing high-quality In0.53Ga0.47As/InP heterojunctions.