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Gallium Oxide Nanowire with Twinning Structure and Its Photoluminescence Property.

In this paper, β-Ga₂O₃ nanowires were synthesized by vapor transport method at different temperatures. The as-prepared samples were analyzed for crystal structure by X-ray diffraction (XRD), transmission electron microscopy (TEM) and selected area electron diffraction (SAED), and for morphology using scanning electron microscopy (SEM). The results show that the Ga₂O₃ nanowires present a monoclinic structure, the length and diameter of the Ga₂O₃ nanowires increased with the growth temperature. A majority of the Ga₂O₃ nanowires present longitudinal twinning structures. A broad photoluminescence emission band was observed from the Ga₂O₃ nanowires at room temperature, which is caused by different kinds of vacancy defects. Our study shows an unusual twinning structure of β-Ga₂O₃ nanowires, which may be helpful to understand the growth mechanism of nanowires.