{'fraction_non_alphanumeric': 0.01647058823529412, 'fraction_numerical': 0.0, 'mean_word_length': 5.350746268656716, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Dynamic model of power MOSFET for SPICE circuit simulation

In this paper, dynamic SPICE model of the power MOSFET is presented. This model is physics-based using empirical parameters extracting from the static and dynamic datasheet or experimental characteristics. In addition, the proposed model uses only one "effective" voltage source to describe the reduction of the drain current at high gate voltages. The interelectrode capacitances are modeled using voltage dependent equations to capture their electrical behavior with gate and drain voltage variations. The proposed model is simple requiring reduced number of parameters without any problem of convergence. It will be shown that this model allows fast and accurate simulation results. Finally, comparison of simulated, measured and datasheet data will be given for validation of the model.