{'fraction_non_alphanumeric': 0.06459054209919261, 'fraction_numerical': 0.07035755478662054, 'mean_word_length': 4.136094674556213, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Performance of dual-band short- or mid-wavelength infrared photodetectors based on InGaAsSb bulk materials and InAs/GaSb superlattices

In this paper, we demonstrate bias-selectable dual-band short- or mid-wavelength infrared photodetectors based on In0.24Ga0.76As0.21Sb0.79 bulk materials and InAs/GaSb type-II superlattices with cutoff wavelengths of 2.2 μm and 3.6 μm, respectively. At 200 K, the short-wave channel exhibits a peak quantum efficiency of 42% and a dark current density of 5.93 × 10−5 A/cm2 at 500 mV, thereby providing a detectivity of 1.55 × 1011 cm⋅Hz1/2/W. The mid-wave channel exhibits a peak quantum efficiency of 31% and a dark current density of 1.22 × 10−3 A/cm2 at −300 mV, thereby resulting in a detectivity of 2.71 × 1010 cm⋅Hz1/2/W. Moreover, we discuss the band alignment and spectral cross-talk of the dual-band n-i-p-p-i-n structure.