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Band engineering for surface emission enhancement in Al-rich AlGaN-based deep-ultraviolet light emitting diodes

The optical polarization properties of Al-rich AlGaN/AlN quantum wells (QWs) with different structure parameters were analyzed using the modified theoretical model based on the effective mass equation. It is demonstrated that the optical polarization properties of AlGaN-based QWs are determined by the valence subband structure, including the energy level order and the valence subband coupling. The results show that the TE-polarized emission is enhanced in Al-rich AlGaN/AlN QWs with smaller well width, a buffer layer inducing compressive stress, and a staggered well layer owing to the change in the valence subband structure. Hence, the enhancement of surface emission from deep-ultraviolet (DUV) AlGaN-based light-emitting diodes (LEDs) can be realized by adjusting the QW structure parameters to induce a valence subband change.