{'fraction_non_alphanumeric': 0.044933920704845816, 'fraction_numerical': 0.015859030837004406, 'mean_word_length': 5.418079096045198, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Electrical characterization of MIS devices using PECVD SiNx:H films for application of silicon solar cells

The surface passivation of crystalline silicon solar cells using plasma enhanced chemical vapor deposition (PECVD), hydrogenated, silicon-nitride (SiNx:H) thin films has become significant due to a low-temperature, low-cost and very effective defect passivation process. Also, a good quality antireflection coating can be formed. In this work, SiNx:H thin films were deposited by varying the gas ratio R (=NH3/SiH4+NH3) and were annealed by rapid thermal processing (RTP). Metal-insulator-semiconductor (MIS) devices were fabricated using SiNx:H thin films as insulator layers and they were analyzed in the temperature range of 100–400 K by using capacitance-voltage (C-V) and current-voltage (I–V) measurements. The annealed SiNx:H thin films were evaluated by using the electrical properties at different temperature to determine the effect of surface passivation. We achieved an energy conversion efficiency of 18.1% under one-sun standard testing conditions for large-area (156 mm × 156 mm) crystalline-silicon solar cells.