{'fraction_non_alphanumeric': 0.03088803088803089, 'fraction_numerical': 0.021235521235521235, 'mean_word_length': 5.329268292682927, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Study of RHEED intensity oscillations during the heteroepitaxial growth of CaF2 on Si(111)

The results of investigations of the nucleation mechanisms and growth of the CaF2/Si(111) heterostructures by reflection high-energy electron diffraction (RHEED) are presented. It is shown that preliminary growth of the 2D silicon buffer layer provides two-dimensional layer-by-layer growth of subsequent layers of CaF2. The possible reasons of the 2D layer-by-layer growth failure at high substrate temperatures are proposed.