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Localisation of silicon nanowires grown by UHV-CVD in (111)-oriented apertures opened in Si (001)

In this paper, we have investigated an alternative method to obtain well-organized silicon nanowires grown by vapor-liquid-solid process. We have studied the influence of the droplet size on the growth direction of nanowires on plain wafers. By using self-organized Au droplets grown by molecular beam epitaxy on vicinal Si(111) surface with a 2° miscut towards the [11-2] crystallographic direction, we have obtained well organized gold droplets along the steps with small size dispersion. The growth of Si nanowires from these droplets allows defining a critical diameter for changing the Si nanowires growth direction. When the gold droplet diameter is larger than 100 nm, Si nanowires exhibit a <111> orientation and remain free of structural defects. The localisation of Si nanowires was performed in nanoscale silicon seeds formed by modified local oxidation of silicon process. This approach, based on a simple and reliable method, enable the organisation of Si nanowires with <111> orientation on Si(001) substrates.