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Effects of auxiliary source connections in multichip power module

Auxiliary source bond wires and connections are widely used to in the power module with paralleled MOSFETs or IGBTs. This paper investigates the working mechanism and the effects of the auxiliary source connections in multichip power modules. It reveals that the auxiliary source connections cannot totally decouple the power loop and the gate loop like how the Kelvin source connection does, because they are still in the loop of power source current. Three effects of the auxiliary source connection are investigated and analyzed: common source stray inductance reduction, transient drain-source current imbalance mitigation and influence on the steady state bond wire current distribution. Simulation and experimental results validate the working mechanism analysis and the effects of the auxiliary source connections.