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Light and field control of light in polariton-active metal-semiconductor structures: interface polariton optoelectronics

This paper considers photoelectric and field modes of controlling the behaviour of interface polaritons in polariton-active metal-semiconductor structures by changing the semiconductor plasma frequency. The principle can be used to control light reflected from the structure. It is shown that a wide variety of optoelectronic devices can be constructed on this basis: modulators tunable over a wide frequency range (controlled reflectors), tunable filters, space modulators, optical transistors and other data-processing units. The principles of controlling the interface polariton characteristics open up new possibilities for resonance diagnostics, namely the study of kinetics of a high-field domain entering the contact, contact potential difference microscopy, analysis of the degree of uniformity of the potential barrier thickness, etc.