{'fraction_non_alphanumeric': 0.02102496714848883, 'fraction_numerical': 0.0, 'mean_word_length': 5.096, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Film Capacitors ESL Extraction based on SiC MOSFET Switching Transient Process

The accurate extraction of film capacitor equivalent series inductance (ESL) is the key to reliable operation in large-capacity power electronic equipment. In existing common ESL time-domain extraction methods, existed methods based on the integration calculation and short test suffered from the accuracy and test safety. Meanwhile, the ESL value in high frequency domain is hard to achieve. Based on this fact, in this paper, an ESL extraction method based on SiC MOSFET turn-off transient oscillation is proposed. It features in accurate ESL in MHz domain and consistency. Proposed methods are tested on four types of film capacitor, the feasibility is proved by tested results.