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Impact of uniaxial strain on the gate leakage currents of PD-SOI MOSFETs and ring oscillators with ultra-thin gate dielectric

In this paper, we report the first investigation of the influence of uniaxial tensile strain on the gate tunneling current in advanced partially-depleted silicon-on-insulator (PD-SOI) MOSFETs. We have also studied, for the first time, the impact of uniaxial strain on the static leakage current of ring oscillators (RO) fabricated in this technology