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Silicon Heterojunction Solar Cell with a p-type Amorphous Silicon Emitter Formed by Catalytic Impurity Doping

We apply a novel doping method, catalytic impurity doping (Cat-doping), to the fabrication of silicon heterojunction (SHJ) solar cells. Tunneling conduction through an indium tin oxide (ITO)/amorphous Si (a-Si) interface can be drastically improved by applying B Cat-doping onto a-Si prior to ITO deposition. We demonstrate the operation of an SHJ solar cell with an emitter layer formed by B Cat-doping. The SHJ cell shows an open-circuit voltage (Voc) of \gt0.6V, suggesting the applicability of B Cat-doping to the fabrication of SHJ solar cells.