{'fraction_non_alphanumeric': 0.03559870550161812, 'fraction_numerical': 0.006472491909385114, 'mean_word_length': 5.655913978494624, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 1, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Strained High Percentage (60%) Boron Doped Silicon-Germanium Alloys - Strain, Dopant Substitionality, Carrier Concentration, Resistivity, and Microstructure Development

In this work we study the incorporation of boron into fully strained high percentage (60%) boron doped Silicon-Germanium (SiGe). We will discuss the epitaxial growth, dopant incorporation, and strain compensation due to the dopant atoms, defect generation in highly strained doped SiGe layers as well as dopant activation, free carrier concentration and mobilities. We will look at band structure effects due to high doping in strained SiGe layers.