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Enhanced Optoelectronic Performance from CVD-grown Metal-semiconductor NiTe2/MoS2 Heterostructures.

Van der Waals heterostructures are the fundamental blocks for 2D electronic and optoelectronic devices. In this work, high quality 2D metal-semiconductor NiTe2/MoS2 heterostructure is prepared by two-step CVD growth. The back-gated field effect transistors (FET) and photodetector based on the heterostructure show enhanced electronic and optoelectronic performance than that of a pristine MoS2 monolayer, owing to the better heterointerface in the former device. Especially, this photodetector based on the metal-semiconductor heterostructure shows three orders faster rise time and decay time than that of the pristine MoS2 under the same fabrication procedure. The enhancement of electronic behavior and optoelectronic response by the epitaxial growth of metallic vdW layered materials can bring a new method to improve the performance of optoelectronic devices.