{'fraction_non_alphanumeric': 0.015625, 'fraction_numerical': 0.01953125, 'mean_word_length': 4.654411764705882, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Some Properties of Silica Film Made by RF Glow Discharge Sputtering

Electrical and optical properties of silica films obtained by RF sputtering both with and without oxygen ambient have been investigated. The resistivity of a typical film without oxygen ambient is found to be about 2×1016Ω cm at room temperature and the activation energy is estimated to be 1.6 eV in the temperature range from 200°C to 400°C. Small quantity of oxygen gas results in an appreciable reduction of deposition rate. With increasing the oxygen partial pressure, the values of ε' and tan δ are found to increase and the absorption peak near 9.3µ shifts to longer wave lengths. These results are considered to be explained in terms of a change in film composition caused by oxygen ambient.