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Determination of the optical bandgap of amorphous silicon

Abstract The optical bandgap of glow-discharge and sputter-deposited a-Si has been deduced from measurements of the absorption coefficient α using a linear extrapolation of (αhvn)1/3 as a function of the photon energy h v. The exponent 1/3 is used instead of 1/2, resulting in a much better fit to the data. The influence of the method of extrapolation on the resulting value for the optical bandgap has been assessed.