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Analysis of Al2O3 high-k gate dielectric effect on the electrical characteristics of a 4H-SiC low-power MOSFET

The work investigates the ability of a high-k gate dielectric material (Al2O3) in improving the electrical performance of a low voltage 4H-SiC-based MOSFET. Such a device could be used, for example, as a low-power device in DC. DC converters for photovoltaic applications. We found that an Al2O3 gate oxide layer determines a higher channel mobility, a lower oxide electric field, a good threshold voltage stability, and a low on-state resistance which is on the order of 160 kΩ × µm2. Although our investigations show that a gate oxide dielectric with high relative permittivity considerably improves the electrical behavior of a MOSFET in 4H-SiC, the off-state leakage current have to be carefully evaluated for a device practical use.