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Integration of Semiconductor Devices with Surface Acoustic Wave Using the Epitaxial Lift-Off Process

This paper presents results of a basic study of high-performance surface acoustic wave-semiconductor integrated circuits in which highly functional compound semiconductor devices and highly efficient surface acoustic wave (SAW) devices are monolithically integrated on the same substrate using epitaxial lift-off (ELO) technology. We improved the epitaxial lift-off process and made advances in wafer handling, etching and bonding. Using these improved processes, we have fabricated basic circuits for SAW-semiconductor cointegrated devices and succeeded measuring basic characteristics.