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Combinatorial study of the phase development of sputtered Pb(Zr,Ti)O3 films

For a comprehensive study of the growth mechanisms of Pb(Zr,Ti)O3 (PZT), we employed a combinatorial sputtering method that enabled us to fabricate films with composition and substrate temperature gradients in-plane. The gradient of the amount of Pb supply was created using PZT ceramic and Pb3O4 powder targets. The substrate temperature gradient was generated in an orthogonal direction by inserting a shadow mask between the heater and substrate. The PZT film was deposited on uniformly deposited (001)LaNiO3/Si in a substrate temperature range of 490 °C–570 °C. It was determined that although the growth condition of PZT films has a relatively large process window, the orientation is easily changed by the temperature and the amount of Pb supply. In addition, the range of the growth temperature, where the films show ferroelectricity decreases with decreasing the amount of Pb supply.