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Two Components of Light-Induced Photoconductivity Decays in a-Si:H

This paper reports the sample dependence of light-induced photoconductivity σph decays in glow-discharge a-Si:H films. “Device-grade” and lightly-P-doped samples both displayed a fast σph decay component at the beginning of illumination, and a subsequent slow one. “Defective” samples, on the other hand, only showed a slow component. A combined measurement of the σph light intensity dependence γ revealed that the fast component is accompanied by a rapid change in γ. These results are discussed on the basis of a simplified model which assumes two distinct recombination processes, i.e., the process from band to tail and the process through dangling bonds.