{'fraction_non_alphanumeric': 0.030303030303030304, 'fraction_numerical': 0.005050505050505051, 'mean_word_length': 5.344, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
High-resolution EDS analysis of ultra-thin TaSiN diffusion barriers for Cu metallization using microcalorimetry

Microcalorimeter-based energy dispersive X-ray spectroscopy (EDS) has been used to analyze ultra-thin TaSiN films under development as ion diffusion barriers in sub-0.1 micrometer integrated circuit (IC) interconnects. The elimination of elemental peak overlaps provided by the improved energy resolution of the microcalorimeter X-ray detector is demonstrated for TaSiN films as thin as 3.5 nm. Also, variation of the electron beam (e-beam) energy is examined to reduce the X-ray generation volume relative to the TaSiN film thickness. This work demonstrates the utility of microcalorimeter-based EDS for compositional metrology of ultra-thin barrier layers for Cu metallization.