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Ferroelectric-Insulator-Germanium Double Gate (F-I-GeDG) FET with steep switching characteristics and improved current drivability

This work presents an analytical model for Ferroelectric-Insulator-Germanium Double Gate Field Effect Transistor (F-I-GeDGFET) with a gate stack comprises of a layer of linear dielectric and a layer of ferroelectric material. Using the Poisson’s equation, L-K equations and Gauss’s law, various device characteristics have been derived. It has been shown that the negative capacitance offered by ferroelectric material present in proposed device results in sub-60 mV/dec device operation, significantly increased total capacitance and improved ON-current in channel. By speculating the characteristics of F-I-GeDGFET and conventional p-type devices, it has been shown that the proposed device offers better gate controllability, improved switching characteristics and enhanced ON-current drivability and carrier transport in the channel.