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Annealing studies of solution-deposited ZrO2 thin films on self-assembled monolayers

Thin films of ZrO2 were deposited from aqueous solution on Si(100) substrates precovered by alkyltrichlorosilane self-assembled monolayers. The interface structure, thermal stability and densification of these films in the temperature range from room temperature to 750 degree(s)C in vacuum were measured using in situ x-ray reflectivity. The growth rate is a nonlinear function of time in solution. Decreasing film thickness and increasing density is found upon annealing up to 750 degree(s)C. A 25 nm film revealed the appearance of a mixed-phase crystalline structure at 800 degree(s)C which disappeared upon cooling. There is no visible evidence of stress-induced microstructural changes, such as peeling or cracking.