{'fraction_non_alphanumeric': 0.0081799591002045, 'fraction_numerical': 0.0, 'mean_word_length': 5.049382716049383, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Variation of the deformation response of a silicon surface due to surface layer saturation with defects under pulsed and pulse-periodic laser radiation

The method of probe beam scattering was used to study the peculiarities of monocrystalline Si surface destruction under pulsed laser irradiation. The shape of scattering signal showed that in the exposure region a surface layer rich in defects is formed. A study has been made on its influence on dynamics of sample surface deformation.