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Applied analytical electron microscopy of semiconductors

The role of transmission electron microscopy (TEM) in the effort to relate physical structure and elemental composition to electrical and opto-electronic performance of silicon and III-V materials and devices is illustrated. TEM is shown to have the spatial resolution to image the finest details of the internal structure of materials and from the many variations of specimen preparation and imaging conditions, combined with elemental analysis in the microscope, valuable three-dimensional characterization is obtained.