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Performance Evaluation of 3.3 kV SiC MOSFET and Schottky Diode for Medium Voltage Current Source Inverter Application

This paper for the first time discusses the dynamic characterization of 3.3 kV SiC-based reverse-voltage blocking current switch for three different switch configurations - SiC MOSFET with a series diode, SiC MOSFETs connected in the common-source or common-drain configuration. The dynamic characterization of the current switch is performed using the conventional double-pulse test at different junction temperatures and different gate resistances. This paper also discusses the static characterization of the latest generation 3.3 kV SiC MOSFET and Schottky diode TO-247 packages. The static characterization of the MOS-FET includes output characteristics, transfer characteristics, junction capacitance measurement and 3rd quadrant characteristics. The static characteristics of the Schottky diode includes the on-state characteristics, and junction capacitance measurement. With the obtained static and dynamic characterization data, the three-phase current-source inverter losses is evaluated for the three different switch configurations and the preferred current switch configuration is selected for a medium voltage-based high-speed motor drive application.