{'fraction_non_alphanumeric': 0.042105263157894736, 'fraction_numerical': 0.008421052631578947, 'mean_word_length': 4.471264367816092, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
The Benefits of Using SiN as a Buried Oxide in Germanium-On-Insulator Substrate

This research aims to show the benefits of using SiN as a buried-oxide (BOX) in germanium-on-insulator (GOI) substrate. The substrate is fabricated by using a direct bonding method with a smart-cut technology. Using SiN as a BOX layer instead of conventinal SiO2 yields the tensile strain of the substrate is ~1.3%-2% approximately, which affects to enhance the mobility of the Ge-based device.