{'fraction_non_alphanumeric': 0.050318922749822824, 'fraction_numerical': 0.028348688873139617, 'mean_word_length': 4.494163424124514, 'pattern_counts': {'":': 0, '<': 1, '<?xml version=': 0, '>': 2, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Design of X-Band GaN Phase Shifters

This paper presents two different types of high-power gallium-nitride (GaN) phase shifters designed for X-band (8-12 GHz), but offering good performance over a much wider band. The first is a 22.5° switched-filter phase shifter, which has much wider bandwidth than is typically found with this configuration, while maintaining low insertion loss (<; 2 dB), good return loss ( >11.15 dB), and an amplitude imbalance of less than 1.03 dB across X-band. The 1-dB compression point was higher than laboratory equipment was able to measure ( >38 dBm) and the phase shifter monolithic microwave integrated circuit exhibited an input-referred third-order intercept point (IIP3) of 46.2 dBm. The second phase shifter is a novel design, which promises wide bandwidth (in our case, limited by the single-pole double-throw switch we have also designed), but which achieves decent insertion loss (5 dB), good return loss (better than 11 dB), and very low phase variation (1°) across X-band, also with 22.5° phase shift. It offers a 1-dB compression point of 30.1 dBm and an IIP3 of 46.3 dBm. The components for a 45 ° differential phase shift using the same structure were also fabricated and verified with measurements. The high-power phase shifters have been fabricated in a 0.5- μm GaN HEMT process and were designed using an accurate customized switch field-effect transistor model.