{'fraction_non_alphanumeric': 0.034013605442176874, 'fraction_numerical': 0.00510204081632653, 'mean_word_length': 4.974619289340102, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Spin-orbital strain effects in semiconductors

We reconsider spin-orbit contribution to strain effects in semiconductors within six-valence-band k · p model. We demonstrate that standard procedure for including that contribution is generally wrong. Indeed, we show that taking into account the spin-orbital strain term of the effective hamiltonian does not modify the matrix form of the strain model in terms of deformation components. Consequently, part of the spin-orbital strain interaction is formally included in the a, b and d deformation potential parameters of the conventional Bir-Pikus matrix. This result brings into question the parameter values: do they or not take into account that spin-orbital strain contribution? Moreover, the remaining part, which involves the split-off valence band, is included in a form similar to that of Pidgeon-Brown (set up for PiPj products) using three additional parameters aΔ, bΔ and dΔ (in place of γ1Δ, γ2Δ and γ3Δ). Following this original approach, we propose new parametrized models for Si, Ge, GaAs and InAs materials. Impacts of spin-orbit contribution are presented for Si, Ge, GaAs and InAs bulk and [001] quantum wells.