{'fraction_non_alphanumeric': 0.04343220338983051, 'fraction_numerical': 0.006355932203389831, 'mean_word_length': 5.019108280254777, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Broadband indium tin oxide nanowire arrays as saturable absorbers for solid-state lasers.

Indium Tin Oxide nanowire arrays (ITO-NWAs), as epsilon-near-zero (ENZ) materials, exhibit a fast response time and a low saturable absorption intensity, which make them promising photoelectric materials. In this study, ITO-NWAs were successfully fabricated using a chemical vapor deposition (CVD) method, and the saturable absorption properties of this material were characterized in the near-infrared region. Further, passively Q-switched all-solid-state lasers were realized at wavelengths of 1.0, 1.3, and 2.0 µm using the as-prepared saturable absorber (SA). To the best of our knowledge, we present the first application of ITO-NWAs in all-solid-state lasers. The results reveal that ITO-NWAs may be applied as an SA while developing Q-switched lasers and that they exhibit a broad application prospect as broadband saturable absorption materials.