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A compact watt-level GaN-on-Si class AB power amplifier for handset applications

This paper presents a GaN-on-Si HEMT Class AB Power Amplifier (PA) delivering watt level power in the 870 MHz band with a power added efficiency (PAE) of 55.4% at 30dBm, and ACPR of −35.5dBc for a 3.84MHz WCDMA signal with 7.5dB PAPR. The PA achieves 45.2% fractional bandwidth, spanning from 600–950 MHz with more than 10dB gain. This PA was implemented using surface mount components that have values feasible for potential future integration into a single chip PA solution. Watt-level output power with high linearity makes this PA a useful component for handset transmitters operating in wideband modulation schemes with stringent linearity requirements.