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Programmable Leakage Test and Binning for TSVs

Leakage test has been a challenge for TSVs in a 3D IC. Most existing methods are still inadequate in terms of the range of leakage currents they can test. In this work, we borrow the wisdom of the IO pin leakage test while enhancing it with two features: (1) we make it more suitable for TSVs which has a much smaller capacitance than an IO pin, and (2) we support leakage binning in a wide range of currents from 1 uA to 128 uA, and thereby allowing flexible test threshold settings and leakage characterization. Since we use only logic gates in the Design-for-Testability circuit, it is also easier to be integrated into the TSV design flow than previous methods.