{'fraction_non_alphanumeric': 0.026923076923076925, 'fraction_numerical': 0.015384615384615385, 'mean_word_length': 4.700729927007299, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
High-Q Coupled-Coil Power-Combining Technique for Fully Integrated CMOS Power Amplifier

This paper presents a stacked hard-switching power amplifier (PA) integrated with a novel power-combining structure. The PA topology requires no RF chokes and employs a unique combination of SLVT PMOS and HVT NMOS transistors to minimize the active circuit footprint. A high-Q non-inverting delta coupled coil with negligible amplitude and phase imbalance is used as part of the power combiner. Design equations for the combiner are derived with its I/O ports matched to any given complex impedances, hence requiring no matching circuit. Designed in 22nm FDSOI CMOS process, the PA achieves 21.6 dBm output power and 58% drain efficiency at 5.4 GHz with a 3 dB output power bandwidth of 39%.