{'fraction_non_alphanumeric': 0.03727714748784441, 'fraction_numerical': 0.014586709886547812, 'mean_word_length': 4.722222222222222, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Nitride-based QD LEDs

InGaN/GaN light-emitting diodes (LEDs) with multiple-quantum-dot (MQD) active layers were fabricated by using an interrupted growth method. We have formed nanoscale QDs embedded in quantum wells (QWs) with a typical 3-nm height and 10-nm lateral dimension. It was found that a large 68.4 meV blue shift in electroluminescence (EL) peak position occurred as the injection current increased from 3 to 50 mA for the MQD LED. The large EL blue shift reveals that deep localization of excitons (or carriers) originates form QDs strengthens the band-filling effect as the injection current increases.