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Thermal Oxidation of Lightly- and Heavily-Doped Silicon in Pure N2O

The growth of silicon dioxide in pure N2O has been evaluated by using conventional furnace oxidation method. The results have pointed out that neither lightly-doped nor heavily-doped substrates exhibit any self-limited growth behavior. The growth kinetics can be described by the linear-parabolic model. Enhanced oxidation has also been observed on heavily arsenic doped substrates in the pure N2O ambient.