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Stoichiometric Study of the Dielectric and Magnetic Properties in Charge Frustrated System LuFe2O4

We report dielectric and magnetic properties of a single crystal of LuFe 2 O 4 with different degrees of oxygen deficiency. The oxygen stoichiometry was monitored with the gas mixture ratio of CO 2 and CO during the crystal growing process. A sample having high resistivity of about 10 kΩ cm sample was found at room temperature. The relation between the control of the charge frustration and the completeness of the charge ordering is discussed.