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A STUDY OF TOTAL IONISING DOSE EFFECTS ON
HFO2 AND AL2O3 GATE OXIDE SOI FINFET

The total ionising dose (TID) effects on different gate oxide used in silicon on insulator (SOI) FinFET are investigated in this paper. The device structure under consideration shows a three-dimensional (3-D) architecture of Silicon on Insulator (SOI) 30nm n-channel FinFET with a high-k hafnium oxide (HfO2) and aluminum oxide (Al2O3) as gate electrode. To test the influence of TID on the FinFET device the 3-D simulations were performed in Visual TCAD using radiation dedicated code for different gate oxides. The TID effects modify the electrical properties leading to deterioration of the device and failure of the systems associated with them. The influence of dose rate on the build-up of fixed charge in the gate oxide region and the interface charge at the oxidesemiconductor interface was analyzed and observed its impact was observed on the device characteristics. It has been found that oxide trapped charge density is higher than interface trapped charge density. As a result of TID, there is an increase in the leakage current and transconductance after irradiation. It is observed that there is a threshold voltage shift with increasing dose of ionizing radiation for both the gate oxide materials.