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Interband transition rate in GaAs.

Starting from a quantum-kinetic Boltzmann equation, the scattering rate for interband transition processes in GaAs is calculated numerically, taking into account a realistic band structure with corresponding Bloch wave functions. We compare with approximate solutions for this scattering rate such as the Keldysh or the Bethe formula, which are frequently used in simulations for high-field electron transport in solids. Based on the parameter-free numerical results, a fit formula for the impact ionization rate in GaAs is derived.