{'fraction_non_alphanumeric': 0.027253668763102725, 'fraction_numerical': 0.020964360587002098, 'mean_word_length': 5.366666666666666, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Light absorption in mono- and polycrystalline YAG:Nd samples under pulsed electron irradiation

We studied the onset of induced optical absorption in mono- and polycrystalline Y3Al5O12:Nd3+ samples upon irradiation by a nanosecond electron beam with electron energy of 250 keV and current density of 25A/cm2. We show that in such crystalline samples, the fast electrons produce induced absorption between 1 and 4.2 eV expressed as a superposition of six adjacent elementary lines. We found that the induced absorption is due to electron transitions from the valence band to a local level around an O−–hole center, while the initial-phase (10−7−10−4s) relaxation of the induced absorption is determined by quadratic recombination of conduction-band electrons with the O−–hole centers. The higher density of structural defects in the polycrystalline sample than the monocrystalline sample increases the band-electron lifetime against capture by O− centers.