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5X reticle fabrication using MEBES multiphase virtual address and AZ5206 resist

An alternative exposure strategy has been developed for the MEBES electron beam exposure system that enhances throughput and improves registration accuracy of 5X reticles. The Multi-Phase Virtual Address (MPVA) exposure strategy utilizes a voting technique to minimize scan related distortions while increasing writing address size thus decreasing the write time significantly over present methods. The resist chosen to evaluate this writing strategy was Hoechst AZ5206. The technique was evaluated to determine performance capabilities for mask registration, linewidth tolerance and uniformity, scan related error reduction and throughput improvements.