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Some Applications of Ion Microprobe Analysis to Problems in Semiconductor Devices

In order to improve the detection sensitivity, accuracy and reproducibility of the ion microprobe mass analyzer, methods to increase the amount of secondary ions and reduce background noise are investigated. Subsequently quantitative analyses of impurities B, P, As and Sb in silicon wafers are carried out and the dependence of minimum detectable concentrations on beam diameter is obtained. Furthermore, in order to analyze any desired area on a sample surface and improve the accuracy of in-depth analysis, a new method to combine high speed scanning with a mask which defines the area to be analyzed is developed. Surface analysis of a power-transistor substrate which has a very complicated pattern is carried out and the result confirms the usefulness of this method.