{'fraction_non_alphanumeric': 0.03255813953488372, 'fraction_numerical': 0.004651162790697674, 'mean_word_length': 5.623076923076923, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Quantitative strain analysis of surfaces and interfaces using extremely asymmetric x-ray diffraction

Strain can reduce carrier mobility and the reliability of electronic devices and affect the growth mode of thin films and the stability of nanometer-scale crystals. To control lattice strain, a technique for measuring the minute lattice strain at surfaces and interfaces is needed. Recently, an extremely asymmetric x-ray diffraction method has been developed for this purpose. By employing Darwin’s dynamical x-ray diffraction theory, quantitative evaluation of strain at surfaces and interfaces becomes possible. In this paper, we review our quantitative strain analysis studies on native SiO2/Si interfaces, reconstructed Si surfaces, Ni/Si(111)–H interfaces, sputtered III–V compound semiconductor surfaces, high-k/Si interfaces, and Au ion-implanted Si.