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Understanding the Charge Transport Mechanism in MoS2 Transistors with Graphene Electrodes

Two-dimensional transition-metal dichalcogenides (TMDs) have emerged as promising candidates for next-generation electronics owing to their excellent semiconducting properties. However, metal-TMDs junctions are of particular interest as they have become a major limiting factors to further improvements in TMD-based device performance. Here, we investigate the charge transport of MoS 2 transistors contacted with Ti/Au and graphene electrodes. Compared to a conventional Ti/Au contact, the MoS 2 devices with graphene electrodes exhibit improved electrical properties (field-effect mobility, subthreshold swing, and low off-state current). Such a device improvement could be attributed to efficient electron injection arising from the tunable graphene Fermi level as well as the high hole barrier height, which significantly reduces the off-state current caused by hole transport. Furthermore, a simple Schottky barrier model has been employed to explain the observed transfer characteristic of MoS 2 transistors with two different contacts. Our finding provides significant insights into the understanding of charge transport in TMD-based transistors for future 2D electronics.