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Nanostructuring of Si(100) by Normal-Incident Ar+ Ion Sputtering at Low Ion Flux

We investigate Si(100) surface morphology evolution under normal-incident Ar+ ions sputtering with low ion flux of 20 μA/cm2. The results indicate that under the low flux ion sputtering, the nanostructuring process of Si(100) is governed by the Ehrlich–Schwoebel (ES) mechanism, rather than by the Bradley–Harper (BH) one for the case of high flux (normally the order of 102 μA/cm2 or larger). This work reveals that the ion flux plays an important role in the surface morphology evolution under ion sputtering, and a usually accepted classification that the ES mechanism is related to metal single-crystals under ion sputtering, while the BH one is to amorphous, and semiconductor targets is questionable.