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Electron mobility and minority‐carrier lifetime of n‐InP single crystals grown by liquid‐encapsulated Czochralski method

Correlations between electron mobility, minority‐carrier lifetime, impurity concentration, and dislocation density have been studied in LEC (liquid‐encapsulated Czochralski)‐grown InP single crystals. Mobilities approaching 30 000 cm2/V s at 77 K, which correspond to compensation ratios of 0.2–0.4, have been obtained. Hole lifetimes as high as 3 μs have been obtained in dislocation‐free single crystals. The experimental results for lifetimes can be explained by a simple model in which dislocation and impurity are considered as recombination centers.