{'fraction_non_alphanumeric': 0.03694267515923567, 'fraction_numerical': 0.006369426751592357, 'mean_word_length': 5.188976377952756, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Dopamine Detection Based on Low-Voltage Oxide Homojunction Electric-Double-Layer Thin-Film Transistors

Quick and accurate detection of dopamine (DA) is of great significance for routine analysis and biomedical diagnosis. Here, low-voltage indium-zinc-oxide (IZO) homojunction electric-double-layer (EDL) transistors using nanogranular SiO2 electrolytes as the gate dielectrics are proposed for DA detection. A DA detection limit of 0.1 nM with good selectivity is obtained at a low voltage of 0.8 V. The DA sensing mechanism can be attributed to the modulation of surface potential of the indium-tin-oxide (ITO) gate electrode by preferential binding of DA molecule to phenylboronic acid. Such low-voltage oxide-based EDL transistors have potential application in biochemical sensors.