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Impact of Multi-Domain Interaction on ON-State Characteristics of MFIS-Type 2D Negative-Capacitance FETs

In this work, with the aid of segmented SPICE simulation, we investigate the impact of multi-domain interaction on MFIS-type 2D Negative-Capacitance FETs with emphasis on the ON-state characteristics. Our study indicates that the multi-domain interaction enhances the lateral electric field for the MFIS device, leading to a higher ON-current. In addition, the multi-domain interaction increases the saturation drain voltage of the MFIS device due to the rise of the internal voltage near the drain-side. Our study also suggests that the negative differential resistance (NDR) effect present in MFIS devices may result from the strong domain interaction in addition to negative DIBL.