{'fraction_non_alphanumeric': 0.034482758620689655, 'fraction_numerical': 0.016646848989298454, 'mean_word_length': 5.6299212598425195, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Influence of quantum‐dots density on average in‐plane strain of optoelectronic devices investigated by high‐resolution X‐ray diffraction

High‐resolution X‐ray diffractometry is used to probe the nature of a diffraction‐peak broadening previously noticed in quantum dots (QDs) systems with freestanding InAs islands on top of GaAs (001) substrates [Freitas et al., Phys. Status Solidi (A) 204, 2548 (2007)]. The procedure is hence extended to further investigate the capping process of InAs/GaAs QDs. A direct correlation is established between QDs growth rates and misorientation of lattice‐planes at the samples surfaces. This effect provides an alternative tool for studying average strain fields on QDs systems in standard triple axis diffractometers running on X‐ray tube sources, which are much more common than synchrotron facilities.