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Coulomb Blockade in Thin SOI Nanodevices

Deca-nanometer size SOI devices have been fabricated with a conventional SOI-MOSFET process adapted in order to favor Coulomb blockade in a silicon channel locally constricted. The device is designed in a thin highly doped SOI layer. At low temperature, the field effect induced by the gate is modulated by periodic Coulomb blockade oscillations attributed to the accumulation islands formed below the gate. The Coulomb oscillations are remarkably periodic, insensitive to disorder and their period is given by the planar capacitance between the gate and the SOI film.