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Fine Oscillatory Structure of the Current Passing through Resonant-Tunneling Diodes

We studied fine oscillatory structure (FOS) appearing on the rising slope of the current peak in resonant tunneling diodes. FOS is a manifestation of the quantum interference caused by reflection of a part of electron wave transmitted through the double barrier at an internal interface. We conclude that FOS was frequently observed in the past but was incorrectly attributed to the lateral quantization of the quantum-well states.