{'fraction_non_alphanumeric': 0.029914529914529916, 'fraction_numerical': 0.005698005698005698, 'mean_word_length': 5.632075471698113, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Diatomic-hydrogen-complex dissociation: A microscopic model for metastable defect generation in Si.

Using first-principles calculations, we demonstrate an explicit reaction pathway for carrier-induced changes in hydrogenated Si through dissociation of paired-H complexes. The complex dissociates through the capture of charge carriers with calculated kinetic barriers for electron- and hole-induced dissociations of 1.1 and 0.9 eV, respectively, in crystalline Si, in general agreement with the experimentally observed activation energies for single-carrier defect creation in hydrogenated a-Si. Exciton lowering of the barrier accounts for the low activation energy of light-induced defect formation.