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Influence of Γ-X Resonance on Photocurrent-Voltage Characteristics in GaAs/InAlAs Strained Superlattices

We have investigated the influence of Γ-X resonance on the photocurrent-voltage characteristics in GaAs/InAlAs type-I strained superlattices. To explain the experimental results, we have calculated the energies of the Γ and X electron states, which are confined in the GaAs and InAlAs layers, respectively, using an effective-mass approximation taking into account the strain effect. We conclude that the Γ1-X1xy resonance causes peaky profiles in the photocurrent-voltage characteristics.