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Misfit Dislocation Structures at MBE-Grown Si1-xGex/Si Interfaces

Misfit dislocation structures introduced at Si1-xGex/Si (001) Interfaces were studied using transmission electron microscopy to understand the relaxation mechanism of lattice misfit in this material system. Misfit dislocations observed at the interfaces for x≤0.5 are inclined 60° dislocations introduced by glide processes. The density of the misfit dislocations increases with mole fraction or thickness of the Si1-xGex as a result of the Hagen-Strunk multiplication mechanism. The threading dislocations contained in the epilayers originate in transition dislocation segments appearing during the multiplication processes. In contrast with these results, the misfit dislocations observed at the Ge/Si interface are the 90° -type introduced by climb processes. The misfit dislocations were regularly distributed with an average spacing of ∼100Å, which is sufficient to relax the 4.2% misfit. Thus, the relaxation mechanism of the misfit strain in the Si1-xGex/Si system changes depending on the lattice misfit.