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Graphene TeraFETs - Effect of gated channel region on THz performance

We investigate the dependence of the responsivity of antenna-coupled graphene field-effect transistors (graphene TeraFETs) on the transistor’s channel geometry. The graphene TeraFETs are fabricated using a wafer-scale CVD process, and the measurements of the detectors of various geometries are performed at 0.1-1.2 THz. The measured data are compared with existing theoretical predictions and help to improve the accuracy of graphene TeraFET responsivity models.