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Time‐integrated and time‐resolved photoluminescence studies of InGaN quantum dots

We present studies of the optical transitions in InGaN quantum dots (QDs). Spatially-resolved micro-photoluminescence (μ-PL) of single InGaN QDs reveals very sharp, clearly-defined peaks that are characteristic of strongly-confined carriers. Time-resolved measurements for single InGaN QDs reveal single exponential decays in contrast to non-exponential decays from the 2D wetting layer (WL) and from ensemble measurements. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)