{'fraction_non_alphanumeric': 0.03151862464183381, 'fraction_numerical': 0.011461318051575931, 'mean_word_length': 4.873949579831932, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Advanced flip-chip package production solution for 40nm/28nm technology nodes

The key technology challenges and solutions in the packaging and assembly of large dies and/or fine pitch on organic substrates for both the 40 and 28 nm technology nodes are reported. Both eutectic PbSn, Pb-free solders, and Cu pillar bumps were used in the flip chip packages. The key challenge of chip-package-integrations (CPI) due to the use of fragile extreme low-k (ELK) dielectric materials in the back-end-of-line (BEOL) layer has been resolved by the redesigning of the BEOL structure and optimizing the materials set including both the organic substrate and solder materials, along with process improvements.