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Study on the Atomic and Electronic Structure in CrN (VN, TiN) Films using CS-Corrected TEM

Transition metal nitrides have found wide-spread applications in the cuttingand machiningtool industry due to their extreme hardness, thermal stability and resistance to corrosion. The increasing demand of these nitrides requires an in-depth understanding of their structures at the atomic level. This has led to some experimental and theoretical researches [1-6]. The films used in this study were deposited by reactive direct current magnetron sputtering of a Cr/V/Ti metal target in an Ar+N2 atmosphere at a constant total pressure of 1 Pa, a target power of 6 kW, and a temperature of 350°C. A TEM/STEM JEOL 2100F operated at 200 kV and equipped with an image-side CS-corrector and a Gatan imaging filter (Tridiem) was utilized for characterizing the film structure.