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Improvement of post-exposure delay stability of chemically amplified positive resist

We have been developing a novolak-based chemically amplified positive resist for next generation photomask (below 0.18 micrometer) fabrication. This resist prevents footing profile by use of a hydrophilic polyphenol compound. We succeeded in improving PED and PCD stability by addition of an ion- dissociative compound. We obtained vertical resist profiles on a chromium-oxide (CrOx) substrate. With the resist, we could make a well defined 0.25 micrometer line-and-space patterns on a CrOx substrate at a dose of 4.0 uC/cm2. Under the ambient air (amines concentration: 4 ppb, humidity: 45%), the line width change was less than 10 nm when the delay time between EB exposure and post-exposure-baking was from 0 to 8 hours. Under the same condition, the line width change was less than 20 nm even when the post-coating delay (PCD) time was 7 days.