{'fraction_non_alphanumeric': 0.030789825970548863, 'fraction_numerical': 0.020080321285140562, 'mean_word_length': 4.5, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Epitaxial Growth of High-Resistivity CdTe Thick Films Grown Using a Modified Close Space Sublimation Method

This paper reports the growth of high-resistivity CdTe thick epitaxial films of single crystal nature using a modified close space sublimation method (MCSS) in a Te-rich environment. We propose that the high Te2 partial pressure results in an increased concentration of TeCd antisites acting as deep donors to produce the high-resistivity CdTe, as well as improved quality of thick films. This is in agreement with the deep-donor model introduced by Fiderele et al. [Cryst. Res. Technol. 38 (2003) 588]. The thick films have a µeτe value in the order 10-4 cm2 V-1 and as expected, the TeCd antisites appeared not to act as electron traps.