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The Characteristics of Nitrogen Implanted Tungsten Film as a New Diffusion Barrier for Metal Organic Chemical Vapor Deposited Cu Metallization

Nitrogen-implanted W thin film (W-N+) has been proposed as a new diffusion barrier for Cu metallization. The crystalline phase of W-N+ thin film is transformed from polycrystalline to amorphous by the implantation of 1–3 ×1017 N+/cm2. However, if the dosage of N+ is less than 6 ×1016 N+/cm2 it is difficult to form the amorphous phase in the W film. The comparison of this amorphized W-N+ diffusion barrier with the conventional W film shows that the amorphized W-N+ diffusion barrier is very effective for preventing the Cu diffusion even at the annealing temperature of 800°C for 30 min, whereas the conventional W film cannot withstand annealing at 600°C for 30 min. Our result at 800°C for 30 min is a new and excellent record for preventing Cu diffusion.