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Silicon Planar Devices Using Nitrogen Ion Implantation

Nitrogen implanted polycrystalline silicon layers are used as an oxidation mask in place of conventional silicon nitride layers for the fabrication of planar structured MOS FET's. The stress effect and anomalous oxidation behavior arising from the conventional LOCOS process are thoroughly eliminated. Moreover, the lateral oxidation effect under the oxidation mask was sufficiently reduced. The threshold voltage, unit channel conductance and junction leakage current of devices having nitrogen implanted polycrystalline silicon gates are on the same level as those of conventional LOCOS type devices, which indicates that heavily implanted nitrogen has no effect on the degradation of the substrate crystal. It is also found that silicon dioxide layers behave as diffusion masks against electrically active nitrogen. Another distinct merit of this process is the elimination of the mask alignment margin between the active region and the polycrystalline silicon gate, which makes possible the consequent increase in the device packing density. These results confine the applicability of this process technology to the fabrication of MOS LSI's with a high packing density.