{'fraction_non_alphanumeric': 0.03801652892561983, 'fraction_numerical': 0.0, 'mean_word_length': 5.446808510638298, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Empirical model for the transconductance-current dependence of short-channel MOSFETs

This work is concerned with the gm-I dependence of sub-micrometer MOSFETs. The transconductance-current expression given by the Advanced Compact Model (ACM) is reviewed and simple modification is proposed. The modification yields an expression which (with proper parametrization) captures the gm-I dependence of short-channel MOSFETs. The proposed expression is “universal” in the sense that it is capable of modeling the gm-I dependence of long-channel MOSFETs, short-channel MOSFETs, and resistively-degenerated BJTs.