{'fraction_non_alphanumeric': 0.03161397670549085, 'fraction_numerical': 0.004991680532445923, 'mean_word_length': 5.142857142857143, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
A Novel HV-NPN ESD Protection Device with Buried Floating P-Type Implant

A novel high voltage NPN (HV-NPN) device with buried floating P-type (BFP) implant at collector side was developed for electrostatic discharge (ESD) protection in a 130nm low cost high voltage CMOS technology. The characteristics of the novel HV-NPN device using transmission line pulse (TLP) measurements show that a second snapback enhances the failure current and reduces the on-resistance at a certain high current levels. The device mechanism is illustrated with technology computer aided design (TCAD)s imulation results.