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High-performance GaAs metal insulator semiconductor transistor

Proton bombardment techniques have been used to fabricate GaAs metal insulator semiconductor transistors (MIST's) with good thermal stability and radiation hardened performance. Highly stable insulator layers have been obtained using both single-species (H1+) and multiple-species (H1+, H2+, O+, and OH+) beams. The device processing is compatible with fabrication of GaAs FET devices in monolithic circuits.