{'fraction_non_alphanumeric': 0.0375, 'fraction_numerical': 0.001388888888888889, 'mean_word_length': 4.722222222222222, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
A critique of the turn-on physics of power bipolar devices

This paper compares the turn-on performance of a vertical p-i-n diode and IGBT, under zero-voltage switching (ZVS). Although both the devices are "conductivity modulated" during turn-on, the IGBT carrier dynamics distinctly differ from that of a p-i-n diode. It is shown that, for identical drift region parameters, the conductivity modulation in IGBT is significantly lower compared to that in a p-i-n rectifier mainly because of carrier flow constraints in the IGBT and its inherent bipolar transistor-like nature. Two-dimensional (2D) mixed device and circuit simulations are performed to understand the behavior of the two devices during turn-on under ZVS.