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Zinc Oxide Light Emitting Diode

PURPOSE: A zinc oxide-based light emitting diode is provided to reduce lifetime of exciton in an active layer. CONSTITUTION: A zinc oxide-based light emitting diode includes an n-type semiconductor layer(130), a zinc oxide-based active layer(150), a p-type semiconductor layer(160), an anode(180), a cathode(170), and a surface plasmon layer(140). The zinc oxide-based active layer is formed on the n-type semiconductor layer. The p-type semiconductor layer is formed on the active layer. The anode is connected to the p-type semiconductor layer. The cathode is connected to the n-type semiconductor layer. The surface plasmon layer is positioned between the n-type semiconductor layer and the active layer or between the active layer and the p-type semiconductor layer.