{'fraction_non_alphanumeric': 0.041407867494824016, 'fraction_numerical': 0.031055900621118012, 'mean_word_length': 4.372222222222222, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
A fully integrated triple-band CMOS hybrid-EER transmitter for WCDMA/LTE applications

This paper presents a fully integrated triple-band CMOS hybrid-EER transmitter for WCDMA/LTE applications. The operation frequency bands are 0.8/2.3 GHz for LTE and 1.9 GHz for WCDMA applications with multi-band class-E power amplifier (PA) using a power cell resizing technique and a multitap transformer. The multi-mode envelope amplifier support 3.84-MHz WCDMA and 5-MHz LTE signal with a dual-switching stage for high efficiency. The PA and envelope amplifier are integrated in a single chip using CMOS process with input/output matching networks. To compensate the nonlinearity of the supply modulated transmitter, the on-chip linearizer is design on a chip. The transmitter achieves output powers of 23/26/22 dBm and power-added efficiency of 27/33/23 % at each frequency band. The transmitter is implemented in a 0.18 μm CMOS process. The total chip size is 1.6 × 2.5 mm2.