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Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance I

Three kinds of paramagnetic centers named PA, PB and PC have been found in a silicon-silicon dioxide structure at liquid nitrogen temperature. PA (g=∼2.000, ΔH=∼4 Oe), and PB having anisotropic g-value (g=∼2.000∼2.010, ΔH=∼6 Oe) are in the exide, while PC which also has anisotropic g-value (g=∼2.06∼2.07, ΔH=∼9 Oe) is in the silicon near the Si-SiO2 interface. Distribution of PB is successfully determined that it has the maximum concentration within about 400Å from the interface. PA and PB appear when the silicon is oxidized in dry oxidizing ambient or the Si-SiO2 is cooled from elevated temperatures to room temperature with a cooling speed of about 500°C/sec. PC appears when the Si-SiO2 is heated at elevated temperatures followed by rapid cooling to room temperature or is exposed to the ambient containing an appreciable amount of hydrogen at elevated temperatures such as 1000°C, for 10 min. PB is ascribed to a trivalent silicon \overset\shortmid\underset\shortmid-Si· which has a nonbonding orbital electron in the Si-O network. The mechanisms for the various behaviors of the centers are also discussed in detail.