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Vapor-Liquid-Solid Growth of Si1-xGex and Ge/Si1-xGex Axial Heterostructured Nanowires

The synthesis of group IV semiconductor nanowires (Si, Ge and Si1-xGex) by metal-mediated growth techniques is of interest for a variety of device applications including wrap-gate field-effect transistors, chemical and biological sensor and photovoltaics. These devices typically require the fabrication of complex nanowire structures in which the doping and/or composition is controlled along the wire axis or radius. In a chemical vapor deposition (CVD) environment, the growth of wire structures is promoted by the presence of metal particles which act as preferential sites for precursor adsorption and wire growth via a vapor-liquid-solid (VLS) mechanism. In VLS growth, the metal particle forms a liquid alloy with the semiconductor material and wire growth occurs upon supersaturation via crystallization of the solid phase from the melt. Vaporsolid (VS) deposition on the sidewalls of the nanowire can occur simultaneously with VLS growth resulting in the formation of structures with tapered diameters. Consequently, it is important to understand the impact of precursor chemistry and growth conditions on both VLS and VS growth in order to control the structure and composition of SixGe1-x nanowires.