{'fraction_non_alphanumeric': 0.018065887353878853, 'fraction_numerical': 0.010626992561105207, 'mean_word_length': 5.197368421052632, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Progress towards the realization of MMIC technology at submillimeter wavelengths: A frequency multiplier to 320 GHz

The authors report on the design, analysis and performance of an all GaAs MMIC multiplier for use at submillimeter wavelengths. A novel method for coupling power in and out of the MMIC chip via a broadband photoetched ridge-waveguide-to-microstrip transition has been developed and used for this implementation. Measurements on the first iteration chipset, which implements a Schottky varactor diode doubler to 320 GHz, show a conversion efficiency of 2.8% at an input power level of 15 mW. This performance is shown to be extremely well predicted by commercially available circuit simulators: HP MDS and Ansoft Maxwell. A second iteration chipset, based upon the excellent agreement between the numeric simulator and measurements on the existing circuit, is nearly complete and is expected to yield even better performance.