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Initial Stage of Nitridation of GaAs(001): Atomic Scale View

The nitridation process of an As-terminated GaAs(001)-β2(2×4) surface was studied by time-resolved reflection high-energy electron diffraction (RHEED) and in situ scanning tunneling microscopy (STM). On the intermediate nitrided surface, a (3×4)-ordered phase was formed by the rearrangement of the As-dimer pairs at 520°C. This phase reverted back to the (2×4)-ordered phase below 400°C (reverse reconstruction by the re-adsorption of As atoms). We propose a model to explain this behavior.