{'fraction_non_alphanumeric': 0.01954732510288066, 'fraction_numerical': 0.00205761316872428, 'mean_word_length': 5.08125, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
A novel technique for investigation of luminescence properties of Ga1-xInxP LPE layers with a small In content

The measuring facilities of an electron probe microanalyser (EPMA) have been extended by adding suitable pairs of band filters. This made it possible to obtain scanning cathodoluminescence (SCL) colour micrographs displaying spatial distribution of the non-uniformities in the cathodoluminescence signal induced from a semiconductor sample. Using the EPMA system modified in such a way, a Ga1-xInxP:N sample prepared by the LPE process has been investigated. The sample contained both p- and n-type layers deposited on a GaP substrate. The p- and n-type area on the bevelled sample were localised through observation of the secondary electron image of the sample surface. It has been found that the colour SCL micrograph technique when complemented by photoluminescence measurements can be used as a valuable tool for investigation of ternary alloy LPE layers.