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Studies on the fabrication method for the array of polycrystalline mercuric iodide detectors

The Mercuric Iodide (HgI2) semiconductor array detectors possess the characters of low noise, high detection efficiency, high energy resolution and working in room temperature. In this work, modified hot-wall physical vapor deposition (HW-PVD) method was used to grow high-quality polycrystalline HgI2 thin-films on ITO glasses, and then 4×4 and 8×8 HgI2 array detectors for X-ray radiation were fabricated. We used two fabrication processes for polycrystalline HgI2 array detectors. One was using mask made of stainless steel with good flexibility; while the other was to photo lithography the array on the ITO glass. The main purpose for this work was to compare the electrical properties of polycrystalline HgI2 array detectors fabricated from different processes, and to find out the optimal process for HgI2 detectors. Results indicated that the photo lithography method was a better way to fabricate polycrystalline mercuric iodide array detector than using mask method.