{'fraction_non_alphanumeric': 0.012182741116751269, 'fraction_numerical': 0.0, 'mean_word_length': 5.7534246575342465, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Patterning of Two-Dimensional Graphene Oxide on Silicon Substrates

Chemically synthesized graphene is promising for device applications because the chemical approach enables ease of mass production and chemical modification of its properties. However, a major drawback of graphene based devices is that it is difficult to integrate the small flakes of graphene into device architectures. In order to overcome this limitation, we describe a simple procedure for patterning graphene oxide (GO) flakes onto predefined locations of silicon substrates. We exploited the negatively charged surface of GO flakes, and successfully patterned GO flakes onto photolithographically defined positively charged regions on silicon substrates. We demonstrate the simultaneous fabrication of multiple GO flakes device structures by controlling the surface chemistry of substrates. Our procedure for the precise positioning of GO flakes will be an important step in the fabrication of graphene devices.