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Impurity-assisted terahertz photoluminescence in compensated quantum wells

The terahertz radiation in GaAs/AlGaAs quantum wells with different types of doping was experimentally studied under interband optical excitation of nonequilibrium charge carriers. The structures doped only with donors, and the structures with a high degree of compensation of donors by acceptors were studied. The spectra of terahertz radiation associated with charge carrier transitions with the participation of shallow impurity states were obtained and analyzed. It was shown that the compensation of donors by acceptors leads to a significant increase in the intensity of terahertz photoluminescence. The spectra of near-infrared photoluminescence with the participation of donor and acceptor states were also studied and analyzed.The terahertz radiation in GaAs/AlGaAs quantum wells with different types of doping was experimentally studied under interband optical excitation of nonequilibrium charge carriers. The structures doped only with donors, and the structures with a high degree of compensation of donors by acceptors were studied. The spectra of terahertz radiation associated with charge carrier transitions with the participation of shallow impurity states were obtained and analyzed. It was shown that the compensation of donors by acceptors leads to a significant increase in the intensity of terahertz photoluminescence. The spectra of near-infrared photoluminescence with the participation of donor and acceptor states were also studied and analyzed.