{'fraction_non_alphanumeric': 0.024963289280469897, 'fraction_numerical': 0.0014684287812041115, 'mean_word_length': 5.4904761904761905, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Fabrication and evaluation of efficient light emitters comprising nanocluster-rich SiO2 layers

We have demonstrated the feasibility of obtaining intense blue-to-violet electroluminescence (EL) from silicon-based light-emitting structures at room temperature (RT), in line with the need for efficient and inexpensive light sources whose production is compatible with existing silicon device technology. Ion-beam synthesis (IBS) and standard silicon processing have been used to fabricate light-emitting diodes whose active medium is a layer of thermal SiO2 containing germanium nanocrystals. Extensive research has been carried out in three main directions: optimization of the fabrication process, improvement in the device lifetime, and elucidation of the underlying mechanisms of light emission and charge injection/charge transport. This research effort has resulted in the establishment of a set of optimum conditions for the formation of improved-quality Si-based light emitters. It has been shown that the use of plasma treatement is helpful in increasing device lifetime. Issues related to the nature and the excitation of the light-emitting centers have been considered. Finally, the utility of such light-emitting devices in the development of integrated optoelectronic devices as well as Lab-on-a-Chip, microarray and sensor systems has been outlined.