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The transport of excess current carriers in an inhomogeneous semiconductor with position-dependent band gap

The theory of excess carrier transport with zero magnetic field in a nondegenerate semiconductor with position-dependent energy gap is presented. It is assumed that the change of energy gap is moderate at the distance of the Debye length and in consequence the quasi-neutrality principle is fulfilled. As the basis the transport equations of the thermodynamics of irreversible processes are chosen. Formulae for the total current density J and for the effective field are derived. It is shown that in addition to the ohmic component the expression for contains the Dember effect, bulk photovoltage (Tauc's effect) and component, the last of these being connected with the position dependence of mobility which is rather unavoidable in the case of a variable energy gap. The continuity equation is formulated as an extension of Roosbroeck's continuity equation for a homogeneous semiconductor. Most typical applications of one-dimensional equations in an approximate form are examined, which is important from the practical point of view.