{'fraction_non_alphanumeric': 0.028169014084507043, 'fraction_numerical': 0.0, 'mean_word_length': 5.095238095238095, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Double-gate single-electron devices formed by single-layered Fe nanodot array

Single-electron devices (SEDs) composed of nanometer-scale dots have been attracted due to their low-power consumption and high functionality. In this paper, we fabricated double-gate SEDs formed by Fe nanodot array which showed periodic Coulomb blockade oscillation characteristics derived from a single dot. As a result, we confirmed that the charge state of the single dot could be controlled by two gates. In addition, we also found an interesting phenomenon that the two gates, which attached parallel to the nanodot array, unevenly affected the nanodots.