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A new approach to the modelling of GaAs/AlGaAs nanostructures

We present details of a new approach to the modelling of nanometre scale devices which are based on the two-dimensional electron gas (2DEG) confined at the interface of a GaAs/AlGaAs heterostructure. The model, which is based on a finite difference solution to the Poisson equation, uses a Fang-Howard variational function to describe the 2D electron wavefunctions, and includes the effects of both a laterally and a vertically inhomogeneous distribution of ionized donor impurities. A self-consistent method of adjusting the boundary conditions is employed to calculate the effect of an additional bias voltage. We apply our technique to the relatively simple case of a single-barrier lateral tunnelling diode. Calculated current-voltage (I-V) characteristics are in excellent agreement with measured data using only the experimentally determined barrier height as a fitting parameter. Although our discussion is limited to a specific structure, we suggest that our method is applicable to a wide range of heterostructure devices.