{'fraction_non_alphanumeric': 0.026252983293556086, 'fraction_numerical': 0.0, 'mean_word_length': 4.8671328671328675, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
The degradation of N-type symmetrical lateral double diffused MOS with different gate voltage stress condition

In this paper, a comprehensive study of different level hot carrier stress conditions for N-type symmetrical lateral double diffused MOS (ns-LDMOS) is carried out. It is noted that there are two peaks bulk current observed for different gate voltage due to Kirk effect happening. The experimental results show two turn-over of Idsat degradation with low Vgs (mainly caused by impact ionization current increase), and one turn-over of Idsat degradation with median Vgs, which is caused by interface states generation. For high Vgs condition, significant damage is occurred on ns-LDMOS. A series of EFA and PFA demonstrate that this damage is not caused by hot carrier injection, but the self-heating effect in body of ns-LDMOS.