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Modeling of Mechanism of Leakage in a Shallow p+/n Junction Formed by Preamorphization

A model of the leakage induced by preamorphization is developed, assuming that the depth profile of excess interstitials making up dislocation loops is equal to the profile before annealing and that it is approximated by Gaussian distribution. It has been confirmed that this model well reproduces experimental data. Furthermore, Ge+ preamorphization was compared with Si+ in detail. An advantage of Ge+ preamorphization over Si+ has been confirmed in a wider range of conditions than in our previous report. A 0.08-µm-deep p+/n junction whose leakage current is less than 1×10-8A/cm2 is fabricated with a 40-nm-thick amorphous layer formed by Ge+ implantation.