{'fraction_non_alphanumeric': 0.030364372469635626, 'fraction_numerical': 0.0, 'mean_word_length': 5.4640522875816995, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
InSnZnO Thin-Film Transistors With Nitrogenous Self-Assembled Multilayers Passivation

Nitrogenous octadecylamine (ODA) self-assembled multilayers (SAMs) are prepared as passivation layers by the vapor-phase process for amorphous InSnZnO (ITZO) thin-film transistors (TFTs). The vapor-phase proposed ODA SAMs show excellent properties as a barrier against the atmosphere and serve as an effective nitrogen doping (N doping) source. After the self-assembled process, the distribution of the oxygen vacancies is modified by N-doping in the channel of the ITZO TFTs, wherefore the ITZO TFTs with ODA SAMs demonstrate an improvement of electrical properties. In addition, the oxygen and water adsorption/desorption reactions at the back channel are suppressed by the atmosphere isolation and N-doping effect, leading to an improvement of the positive bias stability. These results indicate that the nitrogenous ODA SAMs can be likely passivation layers for high-performance oxide TFT devices.