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Estimation of the Minority Carrier Diffusion Length by Near-Field Photocurrent Measurement of p-n Junction in Silicon using Multiwavelength Excitation

Near-field photocurrent measurement is applied for the characterization of p-n junction of silicon devices. By using a multiwavelength excitation source, the penetration depth into the silicon substrate can be tuned from 10 nm to 685 nm. We have measured the minority carrier diffusion length from near-field photocurrent signals. The minority carrier diffusion lengths of an electron Ln and a hole Lp are estimated as 0.47 and 0.37 µm.