{'fraction_non_alphanumeric': 0.01984732824427481, 'fraction_numerical': 0.024427480916030534, 'mean_word_length': 5.247619047619048, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
The Effect of the Indenter Orientation on the Formation of Dislocations and Cracks in (0001) GaN Bulk Crystals

(0001) GaN bulk crystals with a thickness of 3.4 mm and a density of in-grown dislocations of 3.5·106 cm-2 have been deformed at room temperature using a Vickers indenter at two different sample orientations in relation to the indenter. Dislocations and cracks at the indentations were investigated by means of optical microscopy and scanning electron microscopy in secondary electron contrast and cathodoluminescence imaging. The arrangement of indentation-induced dislocations and cracks is described and the orientation effect is discussed.