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A physics based analytical model of undoped body MOSFETs

A continuous physics based analytic model of undoped (or lightly doped) body MOSFETs has been derived in this paper by incorporating the solution of the Poisson equation into Pao-Sah integrated current equation using SPP approach. The closed form solutions of band bending and the inversion charge as a function of gate voltage and channel voltage were first derived from the combination of Gauss's law with the Poisson equation. Then, a continuous non-charge-sheet-based analytical model is developed for the undoped body MOSFETs.