{'fraction_non_alphanumeric': 0.030851063829787233, 'fraction_numerical': 0.027659574468085105, 'mean_word_length': 4.737804878048781, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Focused Ion Beam System For Submicron Lithography

Focused ion beam (FIB) technology has capabilities for resist exposure, maskless implantation, and other applications for semicon-ductor devices with submicron dimensions. Focused ion beam systems, the JIBL-100 and 150, are able to obtain a finely focused ion probe with a diameter less than 0.1 micron using a liquid metal ion (LMI) sources. The JIBL-100 system has been developed for fundamental experiments of FIB technology. The JIBL-150 system is a lithography system controlled by a DEC-VAX11/730 and HP9920 computers. Using these systems, some experiments for sub-half micron lithography have been demonstrated. Both single and double charge Be and Si ion beams are obtainable from an Au-Si-Be LMI source. They can be used for resist exposure with various resist thickness and resist profiles. For example, a T-shaped resist profile was fabricated using 200 keV Be and Si ion beams.