{'fraction_non_alphanumeric': 0.019138755980861243, 'fraction_numerical': 0.0, 'mean_word_length': 5.226190476190476, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
A robust remaining useful lifetime estimation method for discrete power MOSFETs

This paper focuses on the remaining useful lifetime (RUL) estimation of power MOSFETs, which are stressed by thermal cycling. The relative change in on-state resistance is identified as the aging precursor for die attach solder degradation after exhaustive experiments. A data-driven RUL estimation algorithm based on a linear approximation model is proposed. The empirical coefficients are estimated by the classical least squares method. However, the initial part of the data contains a significant number of outliers, which decreases the estimation accuracy. In order to remove the outlier effect and make the estimation robust, least-squares method is applied to only inliers that are determined by random sample consensus (RANSAC) algorithm. With the exclusion of outliers, the RUL estimation is improved for the ones that contain outliers. The accuracy of the proposed RUL estimation tool is verified on a number of thermally aged discrete power MOSFET data.