{'fraction_non_alphanumeric': 0.0311284046692607, 'fraction_numerical': 0.018158236057068743, 'mean_word_length': 5.327868852459017, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Enhanced InAs nanopillar electrical transport by in-situ passivation

We investigate the effects of in-situ passivation on the electrical transport of InAs nanopillars (NPs) grown on InAs (111)B substrates via selective-area epitaxy. Before passivation, the transport properties of InAs NPs, studied by single-NP field-effect transistors, are highly dependent on NP dimensions. With diameters ranging from 70 nm to 200 nm, we find significant differences in resistivity and extracted field-effect mobility (μeff). Growing a 6 nm InP shell for in-situ passivation significantly enhances these transport properties of InAs channel with diameter-independent μeff as high as 6900 cm2/V s. Such heterostructures have the potential as future high electron mobility transistors.