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Reactively Sputtered Nanocrystalline ZrN Film as Extremely Thin Diffusion Barrier between Cu and SiO2

The results of analyses by X-ray diffraction, transmission electron microscopy, and grazing incidence X-ray reflectivity measurement indicate that a 5-nm-thick ZrN film interposed between Cu and SiO2 shows excellent barrier properties, tolerating annealing up to at least 500 °C for 30 min. The X-ray diffraction pattern reveals a decrease in the intensity of the Cu(111) reflection upon annealing at 800 °C, suggesting a failure of the thin barrier due to Cu diffusion through the barrier. We are confident that the formation of a continuous nanocrystalline ZrN film in a uniform fashion in a stable phase with a slightly nitrogen-rich composition is a cause of the excellent features obtained. The formation process of the ZrN film is discussed in terms of the nucleation process of reactive sputtering at a low deposition temperature.