{'fraction_non_alphanumeric': 0.020833333333333332, 'fraction_numerical': 0.0012254901960784314, 'mean_word_length': 5.642276422764228, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Hysteresis-free carbon nanotube field-effect transistors without passivation

Back-gated carbon nanotube field-effect transistors have been fabricated using a wafer-level technology. Source and drain electrodes are structured by lift-off and wet etching. AFM measurements reveal residual contaminations originating from structuring processes. We investigate the particle removal by an oxygen plasma treatment depending on the process time. I/V characterization reveals a strong dependency of transistor characteristics, especially hysteresis behavior, on surface cleanliness. We find the removal of residual particles to be much more important than a passivation to keep water molecules from the transistor region. We show hysteresis-free transistor behavior even after 9 weeks of storage in air without passivation.