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Whisker Growth during Epitaxy of GaAs by Molecular Beam Epitaxy

GaAs whiskers, many of them originating from one point, were observed on GaAs epitaxial layers grown by molecular beam epitaxy. Very small pools of Ga and/or In are believed to precipitate the whiskers which grow at a relatively rapid rate. This whisker growth process is similar to the vapor-liquid-solid (VLS) growth and may not necessarily be a result of any particular substrate defect.