{'fraction_non_alphanumeric': 0.027777777777777776, 'fraction_numerical': 0.002136752136752137, 'mean_word_length': 4.390804597701149, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Dual-work-function modulation for Ni-FUSI metal gate CMOS technology

This paper investigates the work function adjustment of Ni-FUSI metal gate. It is obvious that implanting dopant into poly-Si before silicidation can modulate the work function of Ni-FUSI metal gate efficiently. With the implantation of P-type or N-type dopants, such as BF2 and As or P, the work function of Ni-FUSI metal gate can be made higher or lower to satisfy the requirement of PMOS or NMOS