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Cryogenic Characteristics of Millimetre Wavelength Sschottky Barrier Diodes

High quality millimetre wavelength GaAs Schottky barrier diodes of various doping levels were measured over the temperature range 12°-300°K. The temperature dependence of various diode parameters agreed with existing theory. Factors relevant to obtaining optimum low noise performance from a cryogenic mixer utilizing these diodes are discussed. Finally, microwave measurements of mixer performance at 110 GHz are presented, and compared with the theoretical expectations of low temperature operation.