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Advanced patterning solutions for self-aligned MOS structures in flash memory

The self-aligned MOS (SMS) structure in flash memory is a complex stack that requires novel patterning solutions. For the 90-nm node, we were able to implement an industry-leading 193-nm lithography process. At the 65-nm node, technical constraints drove a significant process flow change which incorporates an enhanced hardmask (EHM) layer. The benefit realized from this change is a wider process window for both lithography and etch.