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Techniques for determination of the absorbed energy density function in electron-beam lithography

An experimental technique for measurement of the absorbed energy density distribution from the center of an electron beam is presented. The test structure and the way of determining critical exposure doses are constructed in such a way that the resist development process has no influence on the experimental results. Questions of `technological' and `physical' proximity functions usage are considered. The absorbed energy density function measurements were carried out for a number of accelerating voltages. The dependence of these function parameters on the electron's energy was determined.