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Integration of electroless copper for seed repair

Electroless copper deposition was studied at International Sematech to show the feasibility of enhancement or repair of physical vapor deposition (PVD) copper seeds in a damascene metallization sequence. Void free copper fill was achieved on single damascene features that meet the requirements of the International Technology Roadmap for Semiconductors (ITRS) for interconnect for the 100 nm and 70 nm technology nodes. Copper films with seed repair were subjected to film stress and gas desorption measurements. In addition, electroless seed repair was incorporated in high aspect ratio dual damascene structures.