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Near-surface profiling of semiconductor materials using neutron depth profiling

Neutron depth profiling (NDP) is a non-destructive analytical technique for the quantitative determination of a few nuclides of particular importance to the semiconductor industry, The first few micrometres of a material can be probed irrespective of the matrix and chemical composition, including across interfacial structures. Recently, it has been used to certify a boron implant in silicon standard reference materials for calibration of secondary ion mass spectrometry (SIMS) instruments. Detection limits and examples of its use for the analysis of boron-doped silicon wafers and diamond films are provided.