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Control of Preferential Orientation of Platinum Films on RuO2/SiO2/Si Substrates by Sputtering

We investigated the preferential orientation of Pt films deposited on RuO2/SiO2/Si substrates at a substrate temperature of 100 °C by RF magnetron sputtering, using only Ar gas without O2 gas. It was found that, for a sputtering power less than 30 W and a sputtering gas pressure of 10 Pa, the Pt(100)-oriented volume ratio over the whole Pt film rapidly increases with film thickness. However, for a sputtering power more than 50 W and the same pressure, the ratio slightly increases with thickness, and it is suppressed by increasing the power. On the other hand, the Pt(111)-oriented volume ratio is smaller and decreases with thickness irrespective of the power, whereas it is increased by decreasing the pressure to 4 Pa at 20 W. From these results, it can be considered that (111)-oriented crystalline growth is mainly driven by the lowest surface energy and that (100)-oriented growth is mainly driven by the strain energy due to intrinsic tensile stress which is increased with thickness and pressure, and decreased with power.