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Cross-sectional STEM Imaging and Spectroscopy of Devices with Embedded 2D Materials

Two-dimensional (2D) systems have been demonstrated to be excellent materials for charge [1] and spin transport [2] in devices. Their exceptional performance in these devices is afforded by their unique electronic structure in their singleor few-layer states. As such, it would be advantageous to characterize how their atomic and electronic structures change while embedded in actual devices, as compared to in their free-standing states. Although simulations have modeled 2D materials embedded within a solar cell or field effect transistor in order to predict the material’s performance [3], experimental results to corroborate these theoretical predictions that show the structure of the 2D material or the interface it shares with the substrate or contacts in the device remain scarce. This region, together with its interface, is as thick as the embedded 2D material in the device, which is often only a few atomic layers, making access inherently difficult.