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LPE Growth of AlGaAs-GaAs Quantum Well Heterostructures

AlGaAs-GaAs single quantum wells with thicknesses d down to 6 nm are prepared by LPE at 742°C. The transmission electron microphotographs and the luminescence/photocurrent spectra of these wells indicate that the interface roughness and the transition layer thickness L of the wells are about 1.5 nm and 3 nm, respectively. Energy levels of E1h, E1l, and E2h are calculated as a function of d and L, which allows us to estimate these values from luminescence or photocurrent spectra measured at room temperatures.