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Absorption Coefficient Measurements of MgZnCdSe II-VI Compounds on InP Substrates and Quantum Confined Stark Effect in ZnCdSe/MgZnCdSe Multiple Quantum Wells

Selective removal of the InP substrates of MgZnCdSe II-VI compound samples by chemical etching using HCl:H3PO4 solutions was investigated for the first time. Using a selective removal technology, the absorption coefficients of the MgZnCdSe layers were estimated from the optical transmission measurements at room temperature. Furthermore, the bandgap energies of MgZnCdSe were obtained as a function of the Mg composition by fitting the theoretical absorption coefficients to the experimental values. In addition, for ZnCdSe/MgZnCdSe multiple quantum well (MQW) samples, absorption coefficient variations due to the quantum confined Stark effect (QCSE) were observed near the absorption edge of the MQW by applying an electric field.