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Fabrication Gallium Nitride (GaN) Nanowires by Thermal Chemical Vapor Deposition (TCVD) Technique

In this paper, low-dimensional gallium nitride (GaN) nanowires have been successfully grown on silicon substrate through thermal chemical vapor deposition (TCVD); no metal catalyst was used to assist growth of nanostructure. A high purity of gallium nitride powder was used as a starting material, evaporated at 1150 OC for 2 hour and then annealing at temperature 1000 OC under stable flow of ammonia (NH3) gas in horizontal quartz tube. The morphological investigation and crystalline and orientations growth of GaN nanostructure were carried out by employing scanning electron microscopy (SEM), high resolution X-ray diffractmeter (HRXRD). A room temperature micro-Raman spectrum were employed to study the optical properties and crystalline defects. XRD shows the diffraction peaks located at 2θ= 32.43, 34.57, 36.89, 48.05, 57.83, 63.62, 69.02, and 70.470 corresponding to the (100 ), (002), (101), (102), (110) , (103),(112 ) and (201) plane diffraction of GaN structure. These results revealed that the diffraction peaks can be attributed to hexagonal GaN phase with lattice constant of a = 3.190 A° and c = 5.1890 A°. Here we report on the growth of GaN nanowires on Si (111) substrate by CVD . This technique is much simpler and cheaper than such techniques as MBE, MOCVD and HVPE.