{'fraction_non_alphanumeric': 0.011058451816745656, 'fraction_numerical': 0.0, 'mean_word_length': 6.458823529411765, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Photoluminescence characterization of silicon subjected to various industrial treatments

Photoluminescence investigations of silicon subjected to such industrial treatments as implantation, high temperature postimplantation annealing, treatment in high frequency discharge plasma, as well as the prolonged thermal annealing with the formation of thermal donors were carried out. It was shown that photoluminescence can be used for direct observation of the implanted impurity activation under various postimplantation treatments. Photoluminescence also proved to be useful for indirect control of thermal donors generation in Si:Ge.