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Research On Binding Energy Of A Donor In A Spherical Quantum Dot At Various Locations On It

The binding energy of a donor in spherical quantum dots (QDs) is calculated, using a variational approach within the effective mass approximation. The binding energy is computed for GaAs QD as a function of the dot size for different impurity positions, and also as a function of the impurity position for different dot sizes. The results of mine show that when the impurity binding energy increases with the reduction in the dot dimension. The binding energy is also found to depend on the location of the impurity, and the same is the maximum for the on-center impurity. Also I found that the value of the polarizability obtained is several orders higher than the hydrogen atom value.