{'fraction_non_alphanumeric': 0.04534313725490196, 'fraction_numerical': 0.011029411764705883, 'mean_word_length': 4.63448275862069, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Silicon-on-insulator latch-up pulse-radiation detector

PURPOSE: A silicon-on-insulator latch-up pulse-radiation detector is provided to generate latch-up from a radiation detector only in response to incident radiation by forming a silicon layer having a PNPN structure on an insulating substrate and forming a gate layer thereon. CONSTITUTION: A silicon-on-insulator radiation detector includes a silicon layer(114) formed on an insulating substrate(112). The silicon layer includes a PNPN structure. A gate layer(118) is formed on the PNPN structure. The gate layer includes a PN gate. The latch-up occurs in the radiation detector only in response to incident radiation. The PNPN structure includes a P+ region, an N-well, a P-well, and an N+ region. The PN gate includes a first P+ region and a first N+ region.