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Fabrication of N-channel single crystalline silicon (100) thin-film transistors on glass substrate by meniscus force-mediated layer transfer technique

We propose a novel low-temperature layer transfer of single crystalline silicon (100) to glass substrate using meniscus force and midair cavity structure. Local transfer of thermally-oxidized silicon-on-insulator (SOI) layer to glass was successfully carried out at 80 °C. N-channel thin-film transistor (TFT) fabricated on glass at 300 °C showed a field-effect mobility of 1097 cm2 V−1 s−1, a threshold voltage of 1.1 V and a subthreshold swing value of 78 mV/dec. Raman scattering analysis suggests such a high mobility of TFT is originated from tensile strain introduced after gate SiO2 film deposition.