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High-power single mode operation of hybrid ion-implanted/selectively-oxidized VCSELs

We first present numerical simulations that quantify this approach by predicting lateral mode discrimination for different sized gain apertures. These calculations are experimentally confirmed by the fabrication and testing of 850 nm VCSELs employing hybrid ion implantation/selective oxidation that produce a single-mode output of more than 5 mW. We performed VCSEL simulations using a 2D axisymmetric finite-difference code that solves for cavity eigenmodes including both mode shape and energy loss rate for a realistic VCSEL structure that includes gain and loss in the quantum well(s). We chose a VCSEL comprised of a 1-/spl Lambda/ cavity containing a single 100 A quantum well with 34 DBR pairs.