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Deactivation of metastable single-crystal silicon hyperdoped with sulfur

(Received 1 October 2013; accepted 9 December 2013; published online 30 December 2013)Silicon supersaturated with sulfur by ion implantation and pulsed laser melting exhibits broadbandoptical absorption of photons with energies less than silicon’s band gap. However, this metastable,hyperdoped material loses its ability to absorb sub-band gap light after subsequent thermaltreatment. We explore this deactivation process through optical absorption and electronic transportmeasurements of sulfur-hyperdoped silicon subject to anneals at a range of durations andtemperatures. The deactivation process is well described by the Johnson-Mehl-Avrami-Kolmogorov framework for the diffusion-mediated transformation of a metastable supersaturatedsolid solution, and we ﬁnd that this transformation is characterized by an apparent activationenergy of E