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Analyzing EMI issues in a DC/DC converter using GaN instead of Si power transistors

This paper analyzes electromagnetic interference (EMI) of a 400 V interleaved DC/DC converter with 650 V GaN transistors. In a first step, it focuses on explaining and reducing intra EMI related to magnetic and capacitive coupling between the power loop and low voltage signal paths typical for very fast switching power devices. Secondly, conducted and radiated noise of the GaN converter are measured, analyzed and put into perspective to a similar DC/DC converter using Si IGBTs and diodes. Next to the switching speed also necessary changes of the DC link capacitors of the GaN converter influence most of all conducted emissions while the commutation loop oscillations triggered by the fast switching GaN transistors contribute to the radiated spectrum an thus increase the spectrum in comparison to the Si converter. The combination of measurement results and theoretical analysis helps the reader to understand fundamental EMI phenomena related to fast switching transistors.