{'fraction_non_alphanumeric': 0.012437810945273632, 'fraction_numerical': 0.0, 'mean_word_length': 4.840579710144928, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Behavior of RF MEMS switches under ESD stress

ESD tests have been performed on RF MEMS capacitive switches in different ambient pressure and environmental conditions. This is done using an integrated measurement setup which can measure out-of-plane displacement as well as current and voltage in the MEMS during an HBM ESD stress event. The effect of ESD on the switch characteristics is investigated.