{'fraction_non_alphanumeric': 0.015533980582524271, 'fraction_numerical': 0.0, 'mean_word_length': 4.931034482758621, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Critical evaluation of IGBT performance in zero current switching environment

This paper reports the internal carrier dynamics of IGBTs under zero current switching conditions. The ZCS performance of a punch-through IGBT is studied with the aid of extensive measurements and numerical simulations. Simulation results are shown to agree with measured waveforms. It is shown that carrier removal in the no-current regime of ZCS turn-off can be utilised to reduce the turn-off power loss of IGBTs in ZCS applications.