{'fraction_non_alphanumeric': 0.030513176144244106, 'fraction_numerical': 0.004160887656033287, 'mean_word_length': 5.067226890756302, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Re-Examination of Carrier Trapping Models for Light-Induced Changes in Hydrogenated Amorphous Silicon

Light-soaked states in hydrogenated amorphous silicon (a-Si:H) are not recovered by near-infrared or visible light illumination. Simple trapping of photogenerated carriers in the gap states of a-Si:H can, thus, be ruled out as the main process which initiates the light-induced changes. The carrier trapping accompanying the change in the atomic configuration, on the other hand, cannot be excluded as the initial process of the changes. The illumination on the light-soaked states may induce the simultaneous bond reconstruction with detrapping. The efficiency of this process has been estimated to be less than 10-5.