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Pulsed laser deposition of thin InxGa1-xAs films

An investigation was made of the distribution of the velocities of the droplets and of the atomic component in a plasma plume formed during laser ablation of InAs and GaAs semiconductor targets. The velocity of atoms was at least 6 times greater than the velocity of droplets. A mechanical velocity filter for the removal of droplets from the plasma plume was constructed. The use of a composite target made it possible to grow epitaxial InxGa1-xAs films of different compositions.