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Modeling of optical characteristics of near-infrared photodetectors on the basis of InAs/GaAs heterointerfaces

A mathematical model for simulation of optical and functional characteristics of InAs/GaAs heterointerfaces with one layer of InAs quantum dots has been developed. The presence of the peak of the main optical transitions in quantum dots of 1.2 eV (modeling) and 1.12 eV (experimental) is demonstrated. The experimental photoluminescence peak has a greater width (0.13 eV) at half the maximum radiation of the main transitions in quantum dots compared to the simulated one (0.06 eV). A red shift of the experimental peak by approximately 65 meV is observed, which indicates the presence of a size variance of quantum dots in the real heterointerface. The modeled distribution of the dark current-voltage characteristic at 90 K and zero shift reveals the value of the dark current density of 10−7 A/cm2, which is an order of magnitude less than the measurement results (10−6 A/cm2). The difference in the pattern of dependence distribution at negative and positive bias associated with the presence of quantum dots of larger size is observed.A mathematical model for simulation of optical and functional characteristics of InAs/GaAs heterointerfaces with one layer of InAs quantum dots has been developed. The presence of the peak of the main optical transitions in quantum dots of 1.2 eV (modeling) and 1.12 eV (experimental) is demonstrated. The experimental photoluminescence peak has a greater width (0.13 eV) at half the maximum radiation of the main transitions in quantum dots compared to the simulated one (0.06 eV). A red shift of the experimental peak by approximately 65 meV is observed, which indicates the presence of a size variance of quantum dots in the real heterointerface. The modeled distribution of the dark current-voltage characteristic at 90 K and zero shift reveals the value of the dark current density of 10−7 A/cm2, which is an order of magnitude less than the measurement results (10−6 A/cm2). The difference in the pattern of dependence distribution at negative and positive bias associated with the presence of quantum dots of larg...