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Enhancement of Boron Diffusion in Silicon by Continuous Wave CO2 Laser Irradiation

We investigated the diffusion of boron (B) by the irradiation of cw CO2 laser light. The diffusion of B was enhanced by irradiating the laser light during annealing in Ar/O2 ambient. It was found that the irradiation of the laser light had the effect of enhances on the growth of an oxide layer. The possible mechanism of the enhanced diffusion is that the excess self-interstitials injected by oxidation at a laser-irradiated point assist the diffusion of B.