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Epitaxial Growth of ZnS on Si by Metal Organic Chemical Vapor Deposition

This paper presents a new method of growing ZnS on Si substrates using metal organic chemical vapor deposition (MOCVD). The method includes the simple process of depositing a thin ZnS buffer layer on an Si(111) substrate prior to the ZnS growth. The ZnS buffer layer is prepared by electron-beam-evaporation at 220°C or MOCVD growth above 500°C, and the most suitable thickness of the layer is about 100 Å. The ZnS film prepared on the layer exhibits a reflection high-energy electron diffraction pattern which consists of elongated spots, indicating good surface morphology.