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WSe2/ReS2 vdW Heterostructure for Versatile Optoelectronic Applications

Stacking of various van der Waals (vdW) materials to assemble heterostructures has led to extended functionalities in terms of electrical transport and optoelectronic applications surpassing individual material performances [1]–[5]. Few layered (FL) WSe2 is chemically stable and shows prominent p-type conduction when contacted with a high work function metal like Pt [6]. ReS2, on the other hand, is an n-type semiconductor which has a direct bandgap invariant of thickness and shows good optical response [7]. Therefore, for the first time, by combining WSe2 and ReS2 as a p-n heterostructure, we report the electrical and optoelectronic properties of the stack.