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The Critical Role of Window Design in Rear-Emitter Solar Cells

This work highlights the critical role of window design on short circuit carrier collection in rear-emitter GaAs0.75P0.25 solar cells. If the window design is not carefully considered, surface depletion caused by Fermi level pinning at the window/air interface can extend into regions of active collection resulting in a large increase in effective AlInP/GaAsP interface recombination velocity. This has been experimentally shown to result in a current loss of 7.8 mA/cm2 in AM1.5G integrated IQE. Calculations of the surface depletion depth as a function of doping and the surface Fermi pinning level provides insight into the fundamental limits of window thickness. If the density of defect states at the AlInP surface can be reduced, restrictions on the necessary window doping/thickness can be relaxed due to a reduction in the surface pinning level.