{'fraction_non_alphanumeric': 0.04144144144144144, 'fraction_numerical': 0.02072072072072072, 'mean_word_length': 4.555, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Intra-oscillator broadband THz generation in a compact ultrafast diode-pumped solid-state laser.

We demonstrate broadband and powerful terahertz (THz) generation at megahertz repetition rate based on intra-oscillator optical rectification (OR) in gallium phosphide (GaP). By placing the nonlinear crystal directly inside the cavity of a Kerr-lens mode-locked ultrafast diode-pumped solid-state laser (DPSSL) oscillator, we demonstrate a compact and single-stage THz source. Using only 7 W of diode-pump power, we drive OR in a GaP crystal with 22 W of average power at ∼80 MHz repetition rate. In a first configuration, using a 0.3-mm-thick GaP and 105 fs driving pulses, we generate up to 150 µW of THz radiation with a spectrum extending to 5.5 THz. In a second configuration allowing for sub-50-fs pulse duration, we generate up to 7 THz inside a 0.1-mm-thick GaP crystal. This performance is well suited for THz time-domain spectroscopy and THz imaging. Intra-oscillator THz generation in sub-100-fs DPSSLs is a promising way to scale down footprint, complexity and cost of powerful broadband THz sources.