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Deep Levels Introduced by Iron Implantation in n-type Silicon and Its Application to Switching Devices

A new life time control method in silicon was developed by making use of implantation of iron. By choosing a dose level of iron and anneal temperature, we obtained a nearly temperature independent hole life time in a well controlled manner in n-type silicon. It was found by studying compensating effects only donor centers were introduced by iron implantation. The energy levels and the capture cross sections of these centers were determined by DLTS. Minority carrier life time was analyzed by assuming that the two of these centers were responsible for the recombination, and a fairly good agreement was obtained with life time data. We applied the iron implantation method to gate controlled switches (GCS's) and demonstrated this method was very suitable for controlling the time constant of switching devices.