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Calculated optical properties of zincblende semiconductors ZnTe, CdTe and HgTe

Self-consistent semi-relativistic linear muffin-tin orbital calculations of the band structures are used in conjunction with the local-density-approximation to derive the complex dielectric function, epsilon ( omega )= epsilon 1( omega )+i epsilon 2( omega ), and the reflectivity spectrum R( omega ) up to 20 eV for the three most common II-VI semiconducting compounds ZnTe, CdTe and HgTe. The authors have interpreted the sharp structures above approximately 9 eV as transitions originating in the metal d levels. It is shown that a very significant contribution to the reflectivity spectrum in the UV energy range arises from the transitions originating in the upper part of the valence band to the higher conduction bands.