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Gallium nitride resonant tunnelling diode

A numerical model of semiconducting resonant tunnelling diode (RTD) on a base of AlGaN/GaN/AlGaN double-barrier quantum structure (DBQS) with a GaN transit layer is created. The functional connections of diode impedance and admittance versus the frequency of a variable signal, parameters of the DBQS and the transit layer are received and investigated. For the diode with an identical width of 1 nm of DBQS layers and an optimum height of input and output AlGaN potential barriers is 0,35 and 0,44 eV. The max negative conductance is close to −7, 5 and − 3 mS at frequencies 0,35 and 0,5 THz when the width of transit layer is equal to 63 and 132 nm accordingly. The higher frequency of a band of negative conductance of diode reaches 0,9 THz under typical parameters of series parasitic resistance of contact members.