{'fraction_non_alphanumeric': 0.014571948998178506, 'fraction_numerical': 0.0, 'mean_word_length': 4.913978494623656, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Analysis of Leakage Current of Low-k Materials for Use as Interlayer Dielectric

The relationship between mobile charge and leakage current was investigated. Both leakage paths and change of charge distribution were taken into account. The difference in flat-band voltage between the applied high and low frequencies reflects the number of mobile charges. Films with a large difference were found to exhibit a large leakage current at high temperatures. Thus, we can conclude that the leakage current arises mainly from the mobile charges in a film.