{'fraction_non_alphanumeric': 0.024390243902439025, 'fraction_numerical': 0.019255455712451863, 'mean_word_length': 5.190476190476191, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Characterization and simulation of traps in InGaP/GaAs HBT by GR noise analysis

This paper has two main axis: first, the low frequency noise characteristics of InGaP/GaAs HBT are investigated for the 100 Hz to 10 MHz frequency range and the temperature range of 300°K to 375°K at low as well as high injection levels. Low frequency generation recombination noise measurements revealed an electron trap with activation energy of 0.536eV. Then, from a rigorous physics-based noise simulation using the Langevin approach within the framework of Green's function, traps detected by temperature-dependent experimental observation is located at the heterointerface δ-InGaP/GaAs, responsible for the GR noise sources. The simulated results are in good agreement with experimental data.