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Optical Characterization of GaAs and GaP Laser-Annealed in High-Pressure Ar Atmosphere

Pulsed laser annealing was carried out on ion-implanted GaAs and GaP crystals in Ar gas at pressures between 1 and 1000 bar. The laser-annealed specimens were characterized by optical methods such as reflectivity, absorption and photo-acoustic spectroscopy. These methods proved to be sensitive to microscopic crystalline defects and to be capable of characterizing the laser-annealed layer of III-V semiconductors.