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Phase Manipulation of Reflection High-Energy Electron Diffraction Intensity Oscillations

The nucleation and island growth behaviour for molecular beam epitaxy of Si on Si(111) during intermittent radiant heating has been investigated using reflection high-energy electron diffraction (RHEED) intensity oscillations. It is found that periodic temperature variations can determine the period and phase of RHEED oscillations. Large beatings in the oscillations are observed when the temperature period is different from the bilayer deposition period. By taking the time-dependent hopping rates into account, we find an excellent agreement between Monte Carlo simulations and experimental results.