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Hole Transport Mechanism in Silicon and Germanium Nanowire Field Effect Transistors

Atomistic hole transport simulation based on nonequilibrium Green's function method and tight-binding approximation has been performed for silicon (Si) and germanium (Ge) p-type nanowire (NW) field-effect transistors (FETs) with the diameter ranging from 1.6 to 3 nm. Simulation results show that the drain current density increases with increasing NW diameter and the difference in the drain current between Si and Ge NW FETs becomes smaller with decreasing NW diameter.