{'fraction_non_alphanumeric': 0.008818342151675485, 'fraction_numerical': 0.001763668430335097, 'mean_word_length': 5.311111111111111, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Research of transient radiation effects on FinFET SRAMs compared with planar SRAMs

This paper presents an analysis of transient radiation-induced soft error of FinFET SRAMs compared to planar SRAMs. For this purpose, we propose an simulation approach starting from a 3D simulation of particle interactions in transistor structures up to circuit level analysis. The analysis shows that bulk FinFETs exhibit lower sensitivity of transient radiation compared to planar MOSFETs primarily due to a reduction in the sensitive volume because of the shape of the transistor.