{'fraction_non_alphanumeric': 0.03766233766233766, 'fraction_numerical': 0.00909090909090909, 'mean_word_length': 5.2682926829268295, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Hydrogenation Time Dependence of a-SiC:H-Based P-I-N Thin Film Visible Light-Emitting Diode Characteristics

The hydrogenation time dependence of hydrogenation effects on the performance of a-SiC:H-based p-i-n thin film light-emitting diodes (TFLEDs) in the visible range has been investigated. It was found that hydrogenation markedly improved the device performance, and that increasing the hydrogenation time beyond a saturation point degraded the device performance; that is, as compared with the performance of a TFLED hydrogenated for a short time (∼15 min), the threshold voltage increased slightly, the EL peak shifted towards a longer wavelength, and the brightness decreased. In particular, after hydrogenation for 45 min, the brightness decreased to 15 cd/m2.