{'fraction_non_alphanumeric': 0.019507186858316223, 'fraction_numerical': 0.003080082135523614, 'mean_word_length': 5.818181818181818, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Sulfurization of near‐stoichiometric CuIn precursor and the influence of low‐temperature slopes on morphology and structural quality

Polycrystalline CuInS2 (CIS) films are prepared by sulfurization of CuIn metallic precursors with Cu/In = 1.2 on Mo substrates. Variation of the rapid thermal processing (RTP) parameters adjusted to the low copper surplus yielded near stoichiometric CIS films with considerably less CuSx precipitation at the surface. A start temperature and low temperature slopes were introduced to guarantee crystal quality and large grain size. XPS/UPS, X‐ray diffraction measurement, and scanning electron microscopy data show the distinct properties of the chalcopyrite phase and its morphological structure in comparison to the standard sulfurization process. A considerable improvement has been achieved by variation of the temperature profiles. The proposed process modules obtain near stoichiometric CIS films for industrial solar cell production.