{'fraction_non_alphanumeric': 0.03734439834024896, 'fraction_numerical': 0.011756569847856155, 'mean_word_length': 5.318777292576419, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Electrical and Optical Properties of Solution-Based Sb-Doped SnO 2 Transparent Conductive Oxides Using Low-Temperature Process

Solution-based Sb-doped SnO 2 (ATO) transparent conductive oxides using a low-temperature process were fabricated by an electrospray technique followed by spin coating. We demonstrated their structural, chemical, morphological, electrical, and optical properties by means of X-ray diffraction, X-ray photoelectron spectroscopy, field-emission scanning electron microscopy, atomic force microscopy, Hall effect measurement system, and UV-Vis spectrophotometry. In order to investigate optimum electrical and optical properties at low-temperature annealing, we systemically coated two layer, four layer, and six layers of ATO sol-solution using spin-coating on the electrosprayed ATO thin films. The resistivity and optical transmittance of the ATO thin films decreased as the thickness of ATO sol-layer increased. Then, the ATO thin films with two sol-layers exhibited superb figure of merit compared to the other samples. The performance improvement in a low temperature process (300 o C) can be explained by the effect of enhanced carrier concentration due to the improved densification of the ATO thin films causing the optimum sol-layer coating. Therefore, the solution-based ATO thin films prepared at 300 o C exhibited the superb electrical (~7.25 × 10 − 3 Ω ·cm) and optical transmittance (~83.1 %) performances.