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Community-based Annotation of Multimedia Documents

An infrared ray detection device comprises a Si crystal substrate, a GexSi1-x (0<x</=1) mixed crystal layer formed on the Si crystal substrate, and a Si crystal layer formed on the GexSi1-x (0<x</=1) mixed crystal layer. An electric charge is stored beforehand in a potential well formed in the GexSi1-x (0<x</=1) mixed crystal layer, and it acts as a signal carrier when it is irradiated by incident infrared rays to be detected. The component elements of the infrared ray detection device can be formed to have a high quality crystal structure, and the infrared ray detection device can detect incident infrared rays having an optional cutoff wavelength longer than 5.2 mu m with high sensitivity.