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Graphene-based plasma wave interconnects for on-chip communication in the terahertz band

As the communication complexity is exacerbated by dimensional scaling of on-chip components, it becomes important to investigate communication and transduction mechanisms that can deliver enhanced connectivity, while minimizing energy dissipated in communication. The communication bottleneck can be mitigated by using graphene-based plasmonic interconnects in high-performance systems. In this work, we use the phenomenon of Dyakonov-Shur (DS) instability in a quasi-ballistic GaN high-electron mobility transistor (HEMT) to electrically excite surface plasmon polaritons (SPPs) in graphene serving as the gate electrode of the HEMT. Information encoded in SPPs is guided along the graphene waveguide for low-energy on-chip data communication. We evaluate and compare the performance of plasmonic interconnects against electrical interconnects at scaled technology nodes.