{'fraction_non_alphanumeric': 0.03575547866205306, 'fraction_numerical': 0.010380622837370242, 'mean_word_length': 4.2926829268292686, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
High conversion efficiency and radiation resistant InP solar cell

This paper presents an investigation of the p+-i-n junction structure InP solar cells fabricated on n-type InP substrates by a liquid phase epitaxial (LPE) growth method using Mg as a p-type dopant. It was found that the junction depth and structure could be controlled by use of Mg diffusion properties during LPE growth. The conversion efficiencies of p+-i-n structure cells are as high as 21.5% at AM 1.5 and 17.2% at AM 0, which are the highest ever reported. The radiation resistance of the p+-i-n structure cell was not as good as the n+-p structure cell because of an increase in the leakage current due to the recombination center introduced in the i-layer with irradiation. Its radiation resistance has been found to be improved by optimizing i-layer thickness for the p+-i-n structure cell.