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3D modeling of CMOS image: Comparison between front- and back-illumination

Three-dimensional (3D) modeling is reported for CMOS active pixel image sensors particularly by comparing front- and back-illumination. The optoelectronic responses are presented versus various power intensity and illumination wavelength. For appropriately designed sensor structure, it is shown that back-illumination could achieve improved sensitivity within certain wavelength range. The presented results demonstrate a methodological and technical capability for 3D modeling optimization of complex CMOS image sensor.