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Structural and Luminescent Properties of ZnO Thin Films Deposited by Atmospheric Pressure Chemical Vapour Deposition

ZnO thin films were successfully deposited on Si (100) substrates by chemical vapour deposition (CVD) at atmospheric pressure (1 atm). The only solid source used here is zinc acetate, (CH3COO)2Zn, and the carrier gas is nitrogen. The sample, which was prepared at 550 degrees C during growth and then annealed in air at 900 degrees C, has only a ZnO (002) diffraction peak at 34.6 degrees with its FWHM of 0.23 degrees in the XRD pattern. The room-temperature PL spectrum shows a strong ultraviolet emission with the peak centred at 380 nm. We analysed the effects of many factors, such as the source, substrates, growth and annealing temperatures, and annealing ambience, on the structural and optical properties of our prepared ZnO films.