{'fraction_non_alphanumeric': 0.027950310559006212, 'fraction_numerical': 0.017080745341614908, 'mean_word_length': 5.084905660377358, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Combination of OPC and AttPSM for patterning sub-0.18-μm logic devices

Phase-shifting mask (PSM) and modified illumination techniques have shown promise in improving resolution and process latitude in optical lithography. Here we present a combination of attenuated PSM and optical proximity correction (OPC) for the patterning of 0.15 micrometers polysilicon lines. Using the combination method, we obtained a depth of focus of 0.9 micrometers DOF for 0.15 micrometers isolated lines, much wider than that achieved in a binary mask without OPC. Furthermore, we confirmed that this method is also effective for improving the exposure latitude.