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Effects of High Temperature Anneals and 60Co Gamma Ray Irradiation on Strained Silicon-on-Insulator (sSOI)

Strained silicon-on-insulator (sSOI) was exposed to high-temperature (1200-1350degC) annealing and high-dose 60Co gamma-ray irradiation (51.5 kGy) to study the tenacity of the bond between the strained Si film and the underlying buried oxide. All samples were characterized by UV Raman, pseudo-MOSFET (psi-MOSFET) current-voltage, Hall mobility, and photoluminescence (PL) to verify any change in strain. UV Raman, PL and psi-MOSFET measurements show no strain relaxation for the high temperature annealed samples and only very slight relaxation for the gamma-ray irradiated samples. In previous studies, the stability of the strain with thermal processing and nano-patterning was analyzed with optical or X-ray methods.