{'fraction_non_alphanumeric': 0.023291925465838508, 'fraction_numerical': 0.007763975155279503, 'mean_word_length': 4.863636363636363, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Extended investigation of a novel MOS device for in-situ heating in 28 nm UTBB FD-SOI CMOS technology

This work aims to present an extended investigation of a new N-MOS device designed in 28 nm FD-SOIUTBB high-k metal gate technology for in-situ heating. Electrical and temperature measurements of different versions of the in-situ heating structure were made at wafer level. Additionally, 3D TCAD electro-thermal simulations were done. Both measurement and simulation results show that the devices are functional and efficient. Such device could be suitable for low and ultra-low temperature design solutions in harsh application environment.