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A possible origin of the large leakage current in ferroelectric Al1−x Sc x N films

Leakage current analysis on 50 nm thick ferroelectric Al0.78Sc0.22N films with TiN electrodes has been performed. The electron conduction followed Schottky emission with an initial Schottky barrier height (ϕ B) of 0.46 eV. During the initial switching, a gradual shift in the leakage current was observed, changing the ϕ B to 0.36 eV, and stayed constant for further switching cycles. From the extracted Richardson constant, the change in the ϕ B can be interpreted as the formation of a tunneling barrier due to the formation of nitrogen vacancies at the metal interface.