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Pyrolysis of Trimethylgallium on (001) GaAs Surface Investigated by Surface Photo-Absorption

We directly observe the process of CH3 desorption from a GaAs surface reacted with trimethylgallium (TMG), using the surface photo-absorption method. After supply of TMG onto the As-stabilized (001) GaAs surface in H2 carrier gas, the reflectivity increases and saturates during H2 purging at substrate temperatures below 500°C. The observed reflectivity change corresponds to the formation of the Ga metal surface caused by CH3 desorption from the CH3-terminated surface. The CH3 desorption can be described by first-order kinetics, and the desorption rate constant is 2×10-2 s-1, i.e., a lifetime of 50 s at 485°C. This is long enough to support the well-accepted mechanism of atomic layer epitaxy, i.e., the inability of the excess TMG to adsorb when supplied to the CH3-terminated surface.