{'fraction_non_alphanumeric': 0.013392857142857142, 'fraction_numerical': 0.002232142857142857, 'mean_word_length': 5.595588235294118, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Simulation of Failure Criteria in Dielectric Layers

Breakdown in dielectric layers has previously been assumed to be dependent only on the electric field strength at a certain point in the dielectric lattice [1], [2]. This does not take quantum aspects of the lattice structure into account. The present model takes into account quantum variations of particles in conjunction with different particle characteristics. Dielectric breakdown patterns are characterised by their quantum breakdown probabilities and studies are carried out as a function of the applied electric field, temperature and specific material constants responsible for breakdown, such as the mean free path and the potential barrier present. How these quantities affect the breakdown probability of the dielectric layer is examined and this facilitates the prediction of failure in dielectric layers in semiconductor devices.