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Novel Flexible and Cost-Effective Retention Assessment Method for TMO-Based RRAM

In this letter, we propose a novel single-cell, cycle-to-cycle based retention testing method, enabling fast statistical retention assessment on oxide-based resistive random access memory (RRAM). Detailed comparison between cycle-to-cycle and device-to-device retention testing methods is made on TiN/HfO2/Hf stack showing excellent agreement in terms of failure rate and extracted activation energy. Due to the unique properties of filamentary RRAM, this new retention testing method allows fast and cost effective retention benchmarking of different material stacks and is particularly versed in the study of the impact of programming algorithms.