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A Study of the Electronic Properties of the GaAs (110) Surface by Using the Cluster-Bethe-Lattice Method

The tight-binding/cluster-Bethe-lattice approach is used to study the electronic properties of the GaAs (110) surface. Two different sets of tight-binding parameters are used in this study. They are the sp3 model and the sp3s* model. The density of states for the GaAs Bethe lattice and the surface atoms are calculated. The ideal surface has two sharp features in the energy gap. The relaxed surface is studied by using different tilted angles of the surface bond. It is found that the surface states are very sensitive to the angle of relaxation. The two sharp features in the gap shift toward either the valence band or the conduction band gradually as the tilted angle is increased and merge in the bands when the angle is 20°. The resonant feature at 2 eV below the VBM as found by experiments is produced in our calculation except for the full relaxation. The desired tilted angle lies between 20° and 34°.