{'fraction_non_alphanumeric': 0.04176334106728538, 'fraction_numerical': 0.02088167053364269, 'mean_word_length': 5.0, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Evaluation of (Bi, La)4Ti3012 Thin Film for Capacitor-Type Synapses

We evaluated (Bi, La)4Ti3O12(BLT) thin films for capacitor-type synapses. The ferroelectric thin films were formed by a sol-gel method. The hysteresis characteristics of the ferroelectric thin films were evaluated using a Sawyer-Tower-Circuit. The results show that the larger the film thickness of the ferroelectric thin film, the more useful it is as synapses.