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Effect of Solid-Phase-Epitaxy Si Layers on Suppression of Sb Diffusion from Sb-Doped n+-BaSi2/p+-Si Tunnel Junction to Undoped BaSi2 Overlayers

A new method is proposed for the growth of undoped BaSi2 overlayers on a Sb-doped n+-BaSi2/p+-Si tunnel junction with reduced Sb diffusion. Samples with the structure of undoped-BaSi2/Si/Sb-doped n+-BaSi2/p+-Si were prepared; the inserted Si layer was grown by solid phase epitaxy and used to prevent Sb diffusion during the growth of undoped BaSi2 overlayers. Secondary ion mass spectrometry measurements indicated that Sb diffusion was effectively suppressed when the growth temperature of the undoped BaSi2 overlayers was 500 °C and lower. The X-ray diffraction (XRD) rocking curves revealed that the full width at half maximum for the BaSi2(600) intensity increased significantly for BaSi2 grown at 440 °C, indicating that the growth temperature should be higher than this temperature.