{'fraction_non_alphanumeric': 0.035046728971962614, 'fraction_numerical': 0.01557632398753894, 'mean_word_length': 5.032863849765258, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Analysis of electrical properties of unpolarized/polarized CNT-BNNT-CNT for varying lengths of BNNT

The study of the electronic and electrical properties of three different samples of CNT-BNNT-CNT was calculated using Density Functional Theory (DFT). The bandgap increases as the length of Boron Nitride Nanotube (BNNT) increases for both polarized and unpolarized samples which depicts the bandgap tunability of CNT-BNNT-CNT based heterostructure nanotube. The bandgap tunability finds application in nanophotonics, nanoelectronics, and Field Effect Transistor (FETs). From the Density of States (DOS) plot, the highest peak was observed in the conduction band for both the polarized and unpolarized CNT-BNNT-CNT samples. In the unpolarized sample, the highest peak was obtained for sample2 at energy 5eV with peak of 90000(eV)-1. For spin-polarized, the highest peak was obtained for sample3 at energy 2/-2eV with peak of 7000/-7000(eV)-1. Higher the availability of peak in DOS plots better is its application of spintronic memory devices. BNNT has its application in sensor membranes, memory devices and separation membrane for separating cations and anions. The research on BNNT is still in its early stages. Hence, it is highly promising for work study and future applications.