{'fraction_non_alphanumeric': 0.0191131498470948, 'fraction_numerical': 0.0030581039755351682, 'mean_word_length': 5.088372093023255, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Design Space of GaN Vertical Trench Junction Barrier Schottky Diodes: Comprehensive Study and Analytical Modeling

We report gallium nitride (GaN) vertical trench junction barrier Schottky (TJBS) diodes and systematically analyzed the effects of the key design parameters on the reverse and forward characteristics of the devices. By taking advantage of the shielding effects from both the trenches and pn junctions in the TJBS structure, the high electric field at the Schottky contact region can be effectively suppressed. We found that the doping concentration, thickness, and spacing of p-GaN, as well as the depth and angle of the trench sidewalls are closely associated with the electric field distribution and the reverse characteristics of the TJBS diodes. With an optimal set of design parameters, the local electric field crowding at either the corner of the trench or the edge of the p-GaN can also be alleviated, resulting in a boosted breakdown voltage of up to 1250 V in the TJBS diodes. In addition, an analytical model was developed to explore the physical mechanism behind the forward conduction behaviors. We believe that the results can provide a systematical design strategy for the development of low-loss, high-voltage, and high-power GaN power diodes towards an efficient power system.