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Behavior of Electron Traps in Phosphidized GaAs by Nitrogen Plasma Treatment

GaAs is treated with remote PH3 and N2 plasmas. Electron traps induced by plasma treatments are investigated by isothermal capacitance transient spectroscopy measurements. PH3 plasma process generates the TP trap (EC-0.26 eV), while N2 plasma process produces the TN trap (EC-0.66 eV). It is found that the TP trap is changed to the TPN3 trap with an energy level as shallow as 0.16 eV below the conduction band edge and a capture cross section as small as 1.8×10-21 cm2 by treating with N2 plasma subsequently after PH3 plasma treatment.