{'fraction_non_alphanumeric': 0.022304832713754646, 'fraction_numerical': 0.01486988847583643, 'mean_word_length': 5.1679389312977095, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Simulation of the Carrier Trapping Effect in a Schottky CdTe Detector by Considering a Nonuniform Electric Field

In order to simulate the low-energy tail in the response function of a Schottky CdTe detector, which is a high-resolution room temperature X- or γ-ray spectrometer, we introduced the effect of a nonuniform electric field within the detector to the response function by a Monte Carlo calculation using the EGS5 code. The simulated response functions were compared with measurements for γ-rays from 109Cd, 241Am, 133Ba, and 57Co sources. The present method successfully reproduced the low-energy tail due to the charge carrier trapping effect, while the conventional model assuming a uniform electric field underestimated the low-energy tail significantly, particularly for higher energy γ-rays.