{'fraction_non_alphanumeric': 0.024427480916030534, 'fraction_numerical': 0.0061068702290076335, 'mean_word_length': 5.626262626262626, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Metallization-induced spontaneous silicide formation at room temperature: The Fe/Si case.

The composition of the interface resulting from the room-temperature deposition of iron on Si(100) under ultrahigh-vacuum conditions has been monitored by surface-sensitive techniques such as Auger electron spectroscopy, low-energy electron diffraction, and photoemission spectroscopy with synchrotron radiation. The results show unequivocally that the Fe/Si interface is not abrupt, but rather an amorphous intermixed region with composition close to Fe 3 Si. The formation of this silicide like layer is related to the metallization of the deposited Fe overlayer