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FABRICATION AND STUDY ON THE HgCdTe MIS DEVICE OF CdTe+ZnS DOUBLE INSULATOR FILMS

The HgCdTe MIS device of CdTe and ZnS double insulator layers was successfully fabricated by using the techniques of the Ar + beam sputtering deposition of CdTe and ZnS films and the HgCdTe device manufacture. The MIS device C V measurement was used to give the electric character of the CdTe/HgCdTe interface. It is proved that the CdTe+ZnS double layer passivant can satisfy the surface passivation of HgCdTe infrared focal plane array.