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Hot carrier relaxation in bulk InGaAs and quantum-wells

We have used the luminescence upconversion technique to perform time-resolved measurements on both bulk InGaAs lattice-matched to InP and InGaAsflnAlAs multiple quantum wells (MQW) at a resolution of . ''7OOfs. For the bulk we present carrier temperatures for O extracted in the usual way from the high energy tail of transient spectra and relate this to more complete lineshape and cooling curve analyses. For the MQW we have found luminescence associated with the n subbands to be persistent to times in excess of 500ps and attribute this to real space transfer effects. In addition we compare rise and decay time data over the spectral emission ranges for the bulk and MQW.