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Optical characterization of nitrogen‐ and antimony‐doped ZnO thin layers grown by MOVPE

Nitrogen‐ and antimony‐doped thin layers have been grown by metal organic vapour phase epitaxy (MOVPE) at 950 °C. The nitrogen‐ and antimony‐doped layers have been characterized by Raman scattering and photoluminescence (PL) spectroscopy. In nitrogen‐doped layers, we have observed several Raman lines from local vibrational modes related to nitrogen. Low temperature PL spectra exhibit donor–acceptor pair (DAP) transitions on both nitrogen‐ and antimony‐doped layers. The DAP transitions have been analysed versus temperature and excitation power experiments. The acceptor binding energy of antimony in ZnO is evaluated to 200 meV.