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Doping concentration dependence of apparent parameters of Schottky diodes with low-barrier defects

The influence of semiconductor doping concentration on the potential pinch-off effect and the apparent parameters of Schottky diodes with small low-barrier height defects was studied by numerical simulations. It is shown that the influence of the pinch-off effect on silicon Schottky diodes parameters is maximized for an n-type doping concentration of about 1016 cm-3, and it decreases for both higher and lower doping concentrations. In the low doping concentration region the pinch-off effect already influences large dimension structures and the transition to low-dimensional diodes does not cause any great change in the apparent barrier height. For high doping concentrations the pinch-off effect is suppressed because the screening length is very low and the potential changes steeply near boundaries.