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A new conduction mechanism for the anomalous cells in thin oxide flash EEPROMs

The temperature dependence of the anomalous leakage current in the tail cells of flash memory is investigated on arrays with different oxide thicknesses. It is shown that both the conduction mechanism and the annealing kinetics of the leakage current change when the thickness is reduced below about 8 nm, becoming independent of temperature. The microscopic conduction of the tail cells is analyzed to investigate the conduction model in thin oxides.