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Transistor scaling with constant subthreshold leakage

A model for scaling transistors with constant subthreshold leakage is presented. In contrast with other scaling theories, the scaling formulation presented does not necessarily lead to transistors with long channel characteristics. Instead, the transistor is scaled only to enhance circuit performance while meeting circuit specifications-in this case, subthreshold leakage current. The model is critically dependent upon the drain induced barrier lowering effect which has been evaluated as a function of channel length, gate thickness, and channel doping. The effect is found to vary asL^{-m}wherem = 1.2-1.4.