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Measurements and calculations of spontaneous emission of tensile and compressively strained multiple quantum-wells structures

The characterization of material and structural properties is essential in the development of high-performance optoelectronics devices. The gain and spontaneous emission of semiconductor emitters are intrinsically related, and knowing one determines the other. In this paper, we report on a comparison between the measured and calculated spontaneous emission spectra of complex semiconductor structures that were developed in our laboratory. Transversely emitted spontaneous emission spectra over a wide range of carrier densities have been obtained for GRIN-SCH-MQW InxGa1-xAsyP1-y structures consisting of three tensile and three compressive wells. Information from these measurements and materials parameters were used to estimate carrier density for each well and subsequently used in the calculation of the emission spectra. The theoretical results were obtained by calculating the spontaneous emission rate for each well independently and then by summing over the six wells. We first calculate the band structure from a 6x6 Luttinger-Kohn Hamiltonian and find the spontaneous emission rate using the carrier density obtained from experimental measurements. A comparison between the Markovian (Lorentzian) and non-Markovian (Gaussian) line shape functions is established, considering the bandgap renormalization. We show that the Gaussian broadening function gives better agreement with the experimental data.