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Optimization of laser annealing of radiation defects for production of an implanted-junction rectifier

In this paper we optimized pulse laser annealing for increasing the recently described effect (see, for example, Pankratov and Spagnolo 2005 Eur. Phys. J. B 46 15, Pankratov 2005 Phys. Rev. B 72 075201, Pankratov 2008 Phys. Lett. A 372 1897) of increasing at one time the sharpness of the p–n junction and the homogeneity of the impurity distribution in a doped area. Some conditions on the correlation between the inhomogeneities of the multilayer structure and the temperature distribution, which was formed by laser pulses, have been considered.