{'fraction_non_alphanumeric': 0.025889967637540454, 'fraction_numerical': 0.011326860841423949, 'mean_word_length': 5.252525252525253, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Study on optimizing the performance of infrared detectors using material chip technology

Using material chip technology, large area n-on-p planar junctions with various boron implantation doses have been fabricated on an Hg1−xCdxTe (x = 0.291) film, similarly grown using molecular beam epitaxy, for the mid-infrared wavelength range. The current–voltage characteristics of p–n junctions have been measured on a cold stage at 77 K and an optimized ion implantation dose has been discovered. Zero bias resistance of all the junctions has been calculated and shows distinct dependence upon the boron implantation doses.