{'fraction_non_alphanumeric': 0.037383177570093455, 'fraction_numerical': 0.005841121495327103, 'mean_word_length': 4.493589743589744, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Cu–W FILM STRUCTURE INFLUENCED BY Ar+ ENERGY AND LOW-ENERGY BEAM FLOW BOMBARD DURING PREPARATION BY TWO-ION-BEAM SPUTTERING

The influences of Ar+ energy and low-energy sputtering on the structure of Cu–W thin film prepared by double-ion-beam sputtering are studied. Results show that the Cu–W thin film sputtered by ion beam onto a Cu substrate is in the form of an amorphous tungsten framework mechanically mixed with Cu grains when the Cu-target Ar+ energy is within 1–2keV and the W-target Ar+ energy is 3keV. The Cu grain size increases slightly, increasing the Cu-target Ar+ energy. When the Ar+ energy increases to the critical value (≈1.5keV), a small amount of Cu is transformed into a single crystal, forming a solid solution with the melting of W. Due to crystal defects and lattice distortion, there is a small shift in the Cu diffraction peak.