{'fraction_non_alphanumeric': 0.029411764705882353, 'fraction_numerical': 0.0, 'mean_word_length': 5.596899224806202, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Total ionizing dose response of NMOS tri-gate nanowires

This paper investigates the Total Ionizing Dose (TID) response of nanoscaled Tri-Gate Field-Effect Transistors (FET) made of silicon multiple-gate NanoWire (NW). The NWFET architecture relies on its remarkable electrostatic properties to push "silicons-based technologies much deeper into device scaling than present FinFETs. But as commonly observed when a new device or technology concept is proposed, such as Shallow Trench Isolation (STI), Silicon-On-Insulator (SOI) or FinFET, TID effects often reveal unexpected behaviors which can permanently modify pristine device electrical characteristics. This is why this paper discusses the impact of several parameters including the NWFET design and the bias configuration during irradiation to get thorough insights into the NWFET TID behavior.