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Topological Impurity Segregation at Faceted Silicon Grain Boundaries Studied by Correlative Atomic-Resolution STEM and APT

Since the end of the 19 th century the detrimental effect of trace elements on the macroscopic materials properties has been observed [1]. However, the connection to the underlying microstructure was not possible to be resolved at that time. In the past two decades, our understanding of the interplay of lattice defects and local compositional modulations has dramatically changed. Especially the development of atomic resolution microscopy techniques established an unprecedented view into the chemistry and atomic structure of defects and interfaces.