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Confined-chalcogenide phase-change memory with thin metal oxide interlayer for low reset current operation

A confined-chalcogenide phase-change memory (CC) with thin metal oxide interlayer (TMOI) aimed to lowering the reset current is proposed in this paper. This proposed structure offer a reduction of the reset current by 65%, 50% and 34.38% in comparison with a normal-bottom-contact (NBC) cell, CC cell and NBC with TMOI cell, respectively. The electrical and thermal characteristics were investigated by using finite element modeling based on electro-thermal physics. It is intriguingly found that the resent current of the proposed cell is significantly reduced by inserting a thin metal oxide (TiO2) film in the middle Ge2Sb2Te5 (GST) and in between GST and TiN heater. Furthermore, the melting shapes and effect of quench speed on the memory cell is also discussed. This implies the high-speed and low-power consumption CC with TMOI cell structure that can hold a promise as a future technology as memory devices.