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Thermodynamic properties of the native oxide-Hg1-xZnxTe interface

The solid phase part of the Hg-Zn-Te-O equilibrium phase diagram has been estimated from thermodynamic calculations. It was found that, contrary to other A2B6 tellurides, ZnTe possesses a preferable oxidation of metal, leaving elemental tellurium at the native oxide-ZnTe interface. It is shown that, as a result, the electrical properties and thermal stability of the native oxide-Hg1-xZnxTe interface are superior to those of the native oxide-Hg1-xCdxTe interface. Hence, in terms of the interface properties, Hg1-xZnxTe seems to be a better material for infrared device applications. It is also demonstrated that for a semiconductor compound the equilibrium phase diagram qualitatively determines the electrical properties of the native oxide-semiconductor interface.