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Accurate method for estimating hole trap concentration in n-type GaN via minority carrier transient spectroscopy

We propose an analysis method for the accurate estimation of the hole trap (H1, EV + 0.85 eV) concentration in n-type GaN via minority carrier transient spectroscopy (MCTS). The proposed method considers both the hole occupation during a filling (current injection) period and the quick carrier recombination via the hole traps near the depletion layer edge immediately after a reverse bias is applied. The reverse bias voltage dependence of the MCTS spectrum indicates that an accurate trap concentration, as well as the hole diffusion length and electron capture cross section of the hole trap, can be determined.