{'fraction_non_alphanumeric': 0.008746355685131196, 'fraction_numerical': 0.0, 'mean_word_length': 6.308510638297872, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Photoluminescence refrigeration in semiconductors

A theoretical study of photoluminescence refrigeration in semiconductors has been carried out using a model that takes into account photon recycling and includes the rate equations for both carriers and photons. General expressions for cooling efficiency, cooling power density, and the cooling condition are derived. The investigation of the photoluminescence refrigeration in an intrinsic GaAs slab shows that net cooling is accessible when quantum efficiency and luminescence extraction are high, and that photon recycling contributes strongly to photoluminescence refrigeration when the luminescence extraction efficiency is small.