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Laser-Interferometric Investigation of Triggering Behavior in CMOS and Smart Power ESD Protection Structures

We report on noninvasive laser-interferometric thermal and free carrier mapping in electrostatic discharge (ESD) protection devices during a high current stress. The method is based on monitoring the changes in the silicon refractive index due to thermo-optical and plasma-optical effects. We study the homogeneity of bipolar transistor triggering along the device width in CMOS and smart power technology devices. The measured optical phase shift due to temperature and concentration changes is in a good agreement with the results of device simulation.