{'fraction_non_alphanumeric': 0.012482662968099861, 'fraction_numerical': 0.0, 'mean_word_length': 5.0886075949367084, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Modeling and Simulation of Low-Voltage MOSFETs Accounting for the Effect of the Gate Parasitic-RC Distribution

The main purpose of this work has been to carry out a complete analysis by simulation of the behavior of low-voltage power MOSFETs accounting for the effects of the gate parasitic-RC distribution. The use of a gate-mesh low resistance has been analyzed as an overall alternative to more traditional materials. Moreover, a design using mixed materials (poly-silicon material and low resistivity one) has been also investigated. The contribution of the gate metal resistivity has been accounted for through modeling and simulation runs. This study is devoted to the decrease of the switching speed, thus allows obtaining advantageous performances in terms of power losses. Moreover good results are shown that can be achieved in terms of robustness due to a more uniform distribution of the current in switching condition within the device structure. The analysis has been realized by building a complete model of the device useful for behavioral simulations based on a preliminary discretization of the geometry into elementary cells. The achieved results can be exploited to improve the device design especially from the point of view of a continuous scaling process. The increase of the switching speed allows managing both higher powers and operative frequency as it is required by new converters and more demanding applications