{'fraction_non_alphanumeric': 0.013642564802182811, 'fraction_numerical': 0.019099590723055934, 'mean_word_length': 5.495575221238938, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
High performance bulk mode gallium nitride resonators and filters

In this paper, measurements and characterization results of several micromechanical bulk-mode resonators and filters fabricated from single crystalline gallium nitride are presented. A 167.6 MHz length-extensional mode resonator is demonstrated that exhibits an unloaded quality factor of 1370 and motional impedance of 485 Ω at atmospheric pressure and 300 K. The ƒ×Q values of the resonators presented in this work measured under ambient conditions are significantly higher than prior work and prove that GaN is a suitable material as a micromechanical resonating element for high-power applications. The relevant material properties of GaN are also characterized.