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Switching characteristics of an asymmetrical complementary 4H-SiC gate turn-off (GTO) thyristor

The switching characteristics of 4H-SiC asymmetric GTO thyristors are studied and compared to Si-based IGBTs, MCTs and MOSFETs. Forward current density, turn-off time and forward blocking voltage parameters are matched for the various switching devices. From the measurements, the necessary parameters were extracted to develop a simple PSPICE circuit model for the SiC GTO. The simulated response of the model is compared to the experimental response of the device.