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Atomic Hydrogen Induced Step Bunching on High-Index GaAs Substrates for Fabrication of Novel Quantum Wire and Quantum Dot Arrays by Molecular Beam Epitaxy

We present our recent experiments on the effect of atomic hydrogen on the growth on planar and patterned high-index GaAs substrates by molecular beam epitaxy and its application to novel quantum wire and quantum dot arrays. The promotion of step bunching on GaAs (331)A substrates by atomic hydrogen to well-ordered multiatomic step arrays is utilized for the fabrication of modulation-doped conductive quantum wires with strong anisotropy of the electron conductivity. Atomic hydrogen induced step bunching on GaAs (311)A substrates combined with lithographic patterning of the substrate prior to growth produces uniform arrays of quantum dots.