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Growth Rate Prediction in SiC Solution Growth Using Silicon as Solvent

Besides the seeded sublimation process, which is the current industrial crystal growth process for silicon carbide (SiC), solution growth appears as a possible method for high quality bulk crystals. For a further development of the latter technique, a robust numerical model has been implemented with the aim to give quantitative outcomes in addition to qualitative information. Growth rates have been calculated for three different temperature ranges (1700, 1800 and 1900°C) in pure silicon. The computed values were found to be in good agreement with the experimental ones.