{'fraction_non_alphanumeric': 0.04942528735632184, 'fraction_numerical': 0.008045977011494253, 'mean_word_length': 5.357664233576642, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 1, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Negative-Acting Aqueous Base-Developable Photoresist With Submicron Resolution Capabilities Over Topography

A family of negative-acting "image reversal" photoresists identified as the MacDermid XNR 2000 series is characterized here in some detail. Although its photoresist chemistry is based on the conventional positive resist concept using cresol Novolak resins together with a somewhat novel 2-1-4 naphthoquinone-diazo-oxide-ester, the conversion of the resist to the negative mode is primarily based on the addition of a new generation of thermal crosslinking agents to a typical positive resist formulation. The processing cycle evolved for this series consists of: (a) spin-coat, (b) soft-bake, (c) UV expose,(d) post-exposure-bake (PEB), and then (e) develop with either metal-ion containing or metal-ion-free developer(s) in either immersion or in-line mode(s).