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Application of the Genetic Algorithm in MOSFET Modeling and Parameter Extraction

In this paper, the genetic algorithm is introduced into parameter optimization for MOSFET small-signal model parameter extraction for up to 60 GHz millimeter-wave operations. Initial parameters of the model are extracted by curve fitting and direct parameter extraction method in saturation region approximately, and then fourteen independent parameters of the equivalent circuit model are optimized together. The real and imaginary part of S-parameter are set as the fitting targets simultaneously in this study. With the more convenient genetic algorithm, the model with the optimized parameters gives a better fitting accuracy than the initial parameters without optimization.