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Fabrication Technique for Carbon Nanotube Single-Electron Transistors Using Focused Ion Beam

We have proposed a technique for fabricating carbon nanotube single-electron transistors using a focused ion beam (FIB). Wiring to a multiwalled carbon nanotube was formed by the ion-beam-assisted deposition of tungsten. Tunneling barriers were formed in the nanotube by ion beam etching. A drain current oscillation originating from the Coulomb blockade effect was observed at 23 K.