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A study of defects generated in Czochralski-grown Si during two-step annealing

A variety of oxygen-related micro-defects (spherical and octahedral precipitates, their agglomerations, dislocations and dislocation loops) with dimensions in the range 0.1-100 mu m were revealed using X-ray topography and transmission electron microscopy after two-step annealing of Czochralski-grown silicon. The defects are distributed in a non-uniform way across the samples with the gradient of their density normal to the crystal surface.