{'fraction_non_alphanumeric': 0.018025751072961373, 'fraction_numerical': 0.002575107296137339, 'mean_word_length': 5.7398843930635834, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 1, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Non-invasive structural analysis of InP quantum dots and other nanostructures using nuclear magnetic resonance

Much new solid-state technology for single-photon sources, detectors, photovoltaics and quantum computation relies on the fabrication of strained semiconductor nanostructures. Development of such devices depends on techniques allowing structural analysis on the nanometer scale. However, commonly used microscopy methods are destructive, leading to the loss of the important link between the obtained structural information and the electronic and optical properties of the device. Nuclear magnetic resonance (NMR) is an attractive option for non-invasive structural analysis, but detecting NMR signals from few-nanometer sized structures is very challenging. The problem is further exacerbated in III-V semiconductors where all nuclei possess quadrupole moments resulting in extremely broad and weak NMR signals. Here I report on a recent development of high sensitivity techniques that solve these problems and move optically detected NMR to a new regime, allowing high-resolution spectroscopy of as few as 105 nuclei in highly strained nanostructures.