{'fraction_non_alphanumeric': 0.03268765133171913, 'fraction_numerical': 0.015738498789346248, 'mean_word_length': 5.4609375, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Surface composition and structure changes in GaAs compounds due to low‐energy Ar+ ion bombardment

We have carried out an experimental study of the surface composition and structural changes of GaAs under Ar+ ion sputtering using Auger electron spectroscopy (AES) and reflection high‐energy electron diffraction (RHEED). The Auger results show that preferential sputtering of As atoms takes place in the GaAs compound and that such a composition change with depth occurs in a simple exponential form with Ga enrichment on the top surface layer. The grown surface undergoes a C(4×4) reconstruction, and after Ar+ ion sputtering this GaAs(001)–C(4×4) structure disappears resulting in an amorphous halo. But the characteristic surface which has a superlattice of (011) on GaAs (001) was found after sputtering and postannealing.