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Multiscale Modeling of Al0.7Sc0.3N-based FeRAM: the Steep Switching, Leakage and Selector-free Array

In this work, by experiments and material calculations, the steep polarization switching and the leakage in ferroelectric Al0.7Sc0.3 N are investigated. The material calculations suggest that the tight distribution of the coercive field is attributed to highly uniform material with well-aligned domains. The electron emission and hopping assisted by N vacancies in the Al0.7Sc0.3 N layer dominate the leakage current. For the first time, a circuit model of Al0.7Sc0.3 N -based FeRAM, reflecting the frequency dependent coercive field and leakage, is established to project the behavior of the selector- free array, and analyzing the dependence of the latency and the read window on the device area, line resistance and the array size.