{'fraction_non_alphanumeric': 0.01971090670170828, 'fraction_numerical': 0.00788436268068331, 'mean_word_length': 5.4033613445378155, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
2-D optimisation current–voltage characteristics in AlGaN/GaN HEMTs with influence of passivation layer

ABSTRACT In the present work, the electrical characteristics of AlGaN/GaN high electron mobility transistors HEMTs is analysed using Nextnano device simulation software, The passivation layer which considered in this study, have been shown an important role on the gate leakage blocking and off-state breakdown voltage enhancement. We can see the influence of different types of passivation materials such as HfO2, Al2O3, and Si3N4 on the output and transfer characteristics of our device, and maximum drain current. A good agreement of the measured I-V characteristics with the simulated one was found which show clearly the validation of the calculation.