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Electronic Transport Characteristics of Gallium Nitride Nanowire-based Nanocircuits

Electronic transport studies of a two-phase gallium nitride nanowire are explored. Current-voltage measurements are taken of gallium nitride based three terminal field effect transistors fabricated via electron beam lithography. The measurements indicate a working field effect transistor utilizing a global back gate configuration. Very high current levels within the nanowire are reported. Direct transport measurements are also taken via two nanomanipulator probes. High current levels in this experiment are also observed. Scanning Probe Recognition Microscopy is used to detect the contact pad and nanowire radial boundary, and a nanowire auto-focus experiment is reported.