{'fraction_non_alphanumeric': 0.0351288056206089, 'fraction_numerical': 0.01288056206088993, 'mean_word_length': 4.9375, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Temperature-to-frequency converter consisting of subthreshold mosfet circuits for smart temperature-sensor LSIs

An ultra-low-power temperature sensor circuit has been developed using a 0.35-µm standard CMOS process. The circuit consists of a proportional-to-absolute-temperature (PTAT) current generator and a frequency-locked loop, and generates a PTAT clock frequency. The PTAT current generator is the key component of the sensor and was constructed by using the characteristics of a MOSFET in the subthreshold region. Theoretical analyses and experimental results showed that the circuit can be used as a temperature sensor with ultra-low-power consumption of 10 µW or less. The accuracy of the sensor output was within ±1.8°C in a temperature range from 10°C to 80°C. Our sensor would be suitable for use in subthreshold-operated, power-aware LSIs.