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Modulation of Schottky barrier height for NiSi/Si(110) diodes using an antimony interlayer

The barrier height modulation of Ni-silicided Schottky contacts fabricated on n-Si(100), n-Si(110), p-Si(100) and p-Si(110) substrate using an antimony (Sb) interlayer was investigated. The Sb layer was directly sputter-deposited on Si substrate followed by the regular Ni deposition and rapid thermal annealing. It is revealed that NiSi can still form even with the Sb interlayer and the effective Schottky barrier height can be significantly modulated on all kinds of Si substrates.