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Electrical properties of some plasma polymers obtained by remote microwave plasma chemical vapor deposition

Some electrical properties of amorphous hydrogenated silicon-carbon films produced by remote microwave hydrogen plasma chemical vapor deposition technique are discussed. The DC conduction of Al/a-Si:C:H/Au and Al/a-Si:C:H/n-Si structures has been measured. Dielectric response of these structures has also been examined. The films are weakly conducting materials with the activation energy of the conductivity equal to 0.28 eV and 0.03 eV and 0.03 eV. MIS structures containing the amorphous silicon-carbon films as an insulator show the influence of trapping phenomena at the insulator-silicon interface.