{'fraction_non_alphanumeric': 0.0347682119205298, 'fraction_numerical': 0.0347682119205298, 'mean_word_length': 4.761904761904762, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Photoinduced Resistance Change in an Oxygen-Deficient La0.9Sr0.1MnO3−δThin Film

Photoinduced resistance change (ΔR/R) in an oxygen-deficient La0.9Sr0.1MnO3−δ thin film is studied. At room temperature, the resistance change of about 30% and response time of about 75 ns are observed under the illumination with a 532 nm laser pulse of 7 ns and light power of 750 mW. It is also found that ΔR/R changes with the light power. The phenomena are explained in terms of the photoinduced hole carriers and localized insulator-to-metal transition, which may have potential applications in optoelectronic devices.