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Low‐temperature grown indium oxide nanowire‐based antireflection coatings for multi‐crystalline silicon solar cells

Light harvesting by indium oxide nanowires (InO NWs) as an antireflection layer on multi‐crystalline silicon (mc‐Si) solar cells has been investigated. The low‐temperature growth of InO NWs was performed in electron cyclotron resonance (ECR) plasma with an O2–Ar system using indium nanocrystals as seed particles via the self‐catalyzed growth mechanism. The size‐dependence of antireflection properties of InO NWs was studied. A considerable enhancement in short‐circuit current (from 35.39 to 38.33 mA cm−2) without deterioration of other performance parameters is observed for mc‐Si solar cells coated with InO NWs.