{'fraction_non_alphanumeric': 0.036, 'fraction_numerical': 0.017333333333333333, 'mean_word_length': 5.008, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Hydrogen passivation of iron-acceptor pairs in boron and gallium co-doped crystalline silicon

The hydrogen (H) passivation behaviors of iron-acceptor (Fe-Ac) pairs in boron and gallium co-doped Czochralski silicon are studied. H atoms introduced by a piranha solution followed by reverse bias annealing can fully passivate the electric activity of Fe–B and Fe–Ga pairs. However, the passivation effect can be partially deactivated when annealed in 80 °C–200 °C and be reactivated when annealed at 250 °C. The temperature of the highest failure fraction for passivated Fe–B and Fe–Ga pairs are 80 °C and 200 °C, respectively. A mechanism was given that H atoms released from the dissociation of acceptor-hydrogen pairs can reactivate the passivation.