{'fraction_non_alphanumeric': 0.026014568158168574, 'fraction_numerical': 0.005202913631633715, 'mean_word_length': 5.2064516129032254, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Initial Growth Process in Electrochemical Deposition of ZnO

ZnO thin films were prepared by electrochemical deposition on (111)Pt/c-sapphire from zinc nitrate aqueous solution by supplying constant current. All films were epitaxially grown, but with a wide distribution of in-plane orientation. For several tens of seconds after the start of the deposition, the time course of cathodic potential showed positive potential versus Ag/AgCl, which is out of range for ZnO growth. Then, the potential decreased abruptly to a negative value and remained constant in the growth range. To evaluate the initial crystal growth, the deposition was stopped immediately after the decrease in potential and the resultant film was characterized by reflective high-energy electron diffraction analysis. The sample was found to contain Zn(OH)2; therefore, the distribution of the in-plane orientation of the ZnO films is considered to arise from this initial growth of Zn(OH)2.