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A behavioural nonlinear SiGe-HBT model based on Gummel-Poon topology

We aimed at building an evolutive Gummel-Poon model dedicated to design of integrated SiGe-HBT cells, easy to incorporate in electrical simulators, and able to take into account the various types of carrier transport that are liable to occur in the behaviour of Si/Si/sub 1-x/Ge/sub x//Si HBT. In order to test the model, we compared the theoretical records with experimental published results. An interesting feature of this model is that it provides the electrical operation of SiGe-HBT devices derived from technological and geometrical parameters.