{'fraction_non_alphanumeric': 0.02079002079002079, 'fraction_numerical': 0.005544005544005544, 'mean_word_length': 4.893877551020408, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Ambipolar Seebeck power generator based on topological insulator surfaces

We propose a thermoelectric (TE) energy conversion device based on the surface of a three-dimensional topological insulator (TI) that is magnetically gap-opened and ionically disordered. A pair of top and bottom surfaces of a single TI film takes the role of a vertical p–n junction with ambipolar conduction, which can be considered as a TE module consisting of two dissimilar TE materials. By tuning the surface carrier screening by means of electric gating, we find that the figure of merit ZT of the device exceeds 1 in the low-temperature-regime below 300 K. Our model may represent one direction for the implementation of TE energy conversion and heat management in nanodevices.We propose a thermoelectric (TE) energy conversion device based on the surface of a three-dimensional topological insulator (TI) that is magnetically gap-opened and ionically disordered. A pair of top and bottom surfaces of a single TI film takes the role of a vertical p–n junction with ambipolar conduction, which can be considered as a TE module consisting of two dissimilar TE materials. By tuning the surface carrier screening by means of electric gating, we find that the figure of merit ZT of the device exceeds 1 in the low-temperature-regime below 300 K. Our model may represent one direction for the implementation of TE energy conversion and heat management in nanodevices.