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1.2: Invited Paper: High Performance Oxide TFTs Doped with Lanthanum Rare Earth

To date, several models were Proposed to reveal the mechanism of light-induced instability in AOSs TFTs. The carrier trapping and ambient interaction model are commonly used to expound this deterioration, but they can hardly explain the remarkable photo-response of AOSs TFTs under the visible-light irradiation (hυ<Eg, band gap of the AOSs) even the TFTs with an optimized passivation. The oxygen vacancies (Vo) photo-ionization model claimed that holes generated by the light ionized the deep sub-gap state of neutral Vo above the valence band maximums (VBM), that were trapped at the interface of channel/dielectric or further injected into the bulk of dielectrics, resulting in the degradation of the TFTs performance. Based on above understanding of light-induced degradation, we introduce the lanthanide (Ln) oxide in the channel to improve the light-induced instability of the metal oxide TFTs. The effects of the Ln concentrations on the performance of Ln-doped Indium-Zinc-Oxide (Ln:IZO) TFTs were systematically investigated. A distinct mechanism for the enhancement of bias illumination stability in Ln:IZO TFTs was Proposed with trap-assisted recovery model.