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Topography of the Ar+-Sputtered Si Surface

The topography of Si surfaces after 30 keV Ar+ bombardment at oblique incidence is studied with and without seeding of high-melting-point W atoms. In both cases, the sputtered Si surfaces exhibit intense corrugated terrace morphology, the dimension of which increases with increasing ion dose. Also, a few cones characteristics for oblique ion incidence are formed and the seed material seems to have no influence on their development.