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Hot-electron-induced luminescence of metal–oxide-semiconductor tunnel devices

We have developed a simple model of luminescence excitation in silicon by hot electrons injected from a metal–oxide-semiconductor (MOS) tunnel structure. In order to support the model, we present the results of an experimental study of such a luminescence. The shape or the radiation spectra of the MOS diodes is shown to depend almost exclusively on the value of the energy of injected carriers defined beyond the inversion or accumulation layer. In particular, this value imposes limitations on the maximal energies of photons which may appear during recombination and intraband electron transitions. We also consider the effect of the energetic distribution of injected electrons on the shape of spectra and the band-structure-related features.