{'fraction_non_alphanumeric': 0.05573770491803279, 'fraction_numerical': 0.04672131147540984, 'mean_word_length': 4.8701923076923075, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Epitaxial Colossal Magnetoresistive/Ferroelectric Heterostructures on Si

We report on processing and properties of La0.67(Sr, Ca)0.33MnO3 (LSCMO) films grown by pulsed laser deposition technique on Si(001) substrates buffered with Bi4Ti3O12/CeO2/YSZ heteroepitaxial layers. X-ray diffraction shows cube-on-cube growth of epitaxial Bi4Ti3O12/CeO2/YSZ/Si heterostructure whereas the LSCMO layer grows in the “diagonal-on-side” manner onto the Bi4Ti3O12 (BTO) template. High resolution TEM images demonstrate sharp interfaces between the buffer layers and LSCMO film as well as rare misfit dislocations on the CeO2/YSZ interface. LSCMO film processing conditions have been optimized to get maximum temperature coefficient of resistivity TCR = 4.4% K− 1 and colossal magnetoresistance (CMR) Δ ρ/ρ ∼ 2.9% kOe−1 @ 294 K. Almost ultimate CMR performance at room temperature has been achieved due to successive improvement of c-axis orientation of layers: full widths at half-maximum (FWHM) = 0.65, 0.58, 0.65, 1.13 and 0.18 degrees in LSCMO/BTO/CeO2/YSZ/Si stack, respectively. Characterization of electrical noise in CMR film yields Noise Equivalent Temperature Difference (NETD) as low as 1.2 μ K/√surd Hz @ 30 Hz and 294 K.