{'fraction_non_alphanumeric': 0.016181229773462782, 'fraction_numerical': 0.0016181229773462784, 'mean_word_length': 5.19, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Effects of uniaxial strain on the gate capacitance of double gate MOSFETs

Gate capacitance versus voltage (C-V) characteristics for double gate MOSFETs with uniaxially strained silicon substrate are presented incorporating wave function penetration effect. Changes in capacitance with stress levels up to 5 GPa are studied. Physical insights of the capacitance value change are also discussed. Contributions of band splitting and effective mass change in C-V due to uniaxial strain are analyzed. Dependencies of C-V change on doping density and body thickness for uniaxial strain are revealed for double gate MOSFETs.