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ZnS:Mn Electroluminescent Device Prepared by Metal-Organic Chemical Vapor Deposition

AC thin-film ZnS:Mn electroluminescent devices were fabricated by metal-organic chemical vapor deposition, using dimethylzinc and H2S as source gases and tri-carbonyl-methyl-cyclopentadienyl-Mn as the dopant gas. Tri-carbonyl-methyl-cyclopentadienyl-Mn was decomposed by heating at 580°C at the entrance of the reactor, enabling the ZnS film to be doped homogeneously with the optimum concentration of Mn. The brightness of metal/insulator/semiconductor electroluminescent devices made with the resulting ZnS:Mn film was more than 5000 cd/m2 (5 kHz, 130 V), while metal/insulator/semiconductor/insulator electroluminescent devices had a brightness of more than 6000 cd/m2 (5 kHz, 160 V) and exhibited hysteresis in their brightness-voltage characteristics.