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Empirical trends of minority carrier recombination lifetime vs proton radiation for rad-hard IR detector materials

The continuous effort to improve space-based infrared (IR) detectors has led to a search for greater fundamental understanding of radiation damage phenomena effects on key material properties. The material parameter of interest in this paper is the minority carrier recombination lifetime (MCRL), which is directly related to detector performance and can be empirically determined. As radiation damage is incurred upon a detector structure, the MCRL can be significantly affected, and tracking this in a step-wise, in-situ fashion at a radiation source can reveal rates of defect introduction. This has been accomplished by the development of a portable MCRL measurement system employing time resolved photoluminescence (TRPL) while maintaining operational temperatures. Using this methodology is more insightful than the so-called ‘bag tests’ (i.e. characterization before and after a single 100krad dosage) due to complex parameter changes witnessed with annealing as temperatures change. In addition to the system description, MCRL data on IR detectors from its inaugural deployments at a proton radiation source are analyzed and reveal a linear relationship between inverse MCRL and proton fluence.