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Fabrication of GaAs-based 3-D photonic bandgap materials

Significant advances in the fabrication of 3-D photonic crystals with anticipated bandgaps in the near infrared region are reported. A three-layer photonic bandgap material has been fabricated on a micron scale using a combination of dry etching, selective wet etching, and GaAs-to-GaAs wafer bonding. This experimental demonstration verifies that there are no practical limitations to bonding on top of previously bonded layers. We anticipate that a pronounced gap in transmission will be observed when additional periods are added.