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Band Discontinuities of Semiconductor Heterojunctions Studied Using a Free Electron Laser Internal Photoemission Technique

Measurements of the band discontinuities of semiconductor heterojunctions were carried out using a free electron laser internal photoemission (FEL-IPE) technique. This technique is based on photocurrent spectroscopy utilizing the tunability and intense peak power of the FEL operative in the infrared range. Band discontinuities of ZnSelGaAs and GaAlAsIGaAs which are two typical types of heterojunctions were