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A Study of Boron Implantation into High Ge Content SiGe Alloys

We report an experimental and simulation study for introducing Boron ions into high Ge content relaxed SiGe layers and into Ge wafers. The successful calibration of our Monte Carlo ion implantation simulator for this wide class of materials is demonstrated by comparing the predicted Boron profiles with SIMS data. The larger nuclear and electronic stopping power of the Ge atom is responsible for the trend to shallower profiles with increasing Ge content in SiGe alloys. The generated point defects are estimated by using a modified Kinchin-Pease model. We found that the higher displacement energy in Ge, the stronger backscattering effect, and the smaller energy transfer from the ion to the primary recoil of a collision cascade are mainly responsible for the significantly reduced damage in Ge. Finally the point responses in Si and Ge are presented and the Boron distributions are discussed.