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Investigation of Electrical Performance and Reliability of Memristors by Tuning Compliance Current During Electroforming Process

Electronic synapses are widely considered to have a huge potential to construct brain-inspired computing system. The discovery of memristor promotes the investigation of electronic synapses and neural network. However, there is still a lack of exploration of effective stimulus method for tuning the synaptic plasticity of memristor. In this work, we reveal an effective method for exciting memristor. Meanwhile, the synaptic plasticity and analog behavior have been studied. Next, the compliance current in electroforming acts as main factor to influence the performance of memristors. The results may provide effective guidance for the design of memristor in both industry and academia.