{'fraction_non_alphanumeric': 0.014814814814814815, 'fraction_numerical': 0.005925925925925926, 'mean_word_length': 4.777777777777778, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
The influence of graded InxGa1-xAs on strain distribution and the band gap in the InAs/GaAs quantum dots

The effect of the graded InxGa1-xAs layer on the distribution of the strain was studied by calculating the strain of different models using the finite element method. The results demonstrate that the graded InxGa1-xAs layer can reduce the strain and thus lead to longer emission wavelength. The results also demonstrate that the graded InxGa1-xAs layer can increase strain in the GaAs capping layer which cause disadvantage to grow stacked InAs/GaAs QD structure. But the strain can be released though increase the thickness of spacer layer when grow stacked structure.