{'fraction_non_alphanumeric': 0.01809954751131222, 'fraction_numerical': 0.007541478129713424, 'mean_word_length': 5.775510204081633, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Electrodeposited semiconducting molybdenum selenide films. I. Preparatory technique and structural characterisation

Molybdenum selenide films have been electrodeposited cathodically on titanium substrates from an ammoniacal solution of H2MoO4 and SeO2 under galvanostatic conditions. The initial layers of the film were of Se followed by an increasing amount of Mo in the deposit. Some intermediate layer has a composition equivalent to molybdenum selenide (MoSe2). An 'induced codeposition' mechanism for the MoSe2 film deposition has been suggested. Structural characterisation of the electrodeposited films using EDAX, EM and SEM studies has been carried out.