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Dynamic write limited minimum operating voltage for nanoscale SRAMs

Dynamic stability analysis for SRAM has been growing in importance with technology scaling. This paper analyzes dynamic writability for designing low voltage SRAM in nanoscale technologies. We propose a definition for dynamic write limited VMIN. To the best of our knowledge, this is the first definition of a VMIN based on dynamic stability. We show how this VMIN is affected by the array capacity, the voltage scaling of the word-line pulse, the bitcell parasitics, and the number of cycles prior to the first read access. We observe that the array can be either dynamically or statically write limited depending on the aforementioned factors. Finally, we look at how voltage-bias based write assist techniques affect the dynamic write limited VMIN.