{'fraction_non_alphanumeric': 0.014905149051490514, 'fraction_numerical': 0.0, 'mean_word_length': 5.158333333333333, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
A monolithic optical phase-shift detector on silicon

A novel monolithically integrated device used as an optical phase-shift detector is presented. It consists of a diffraction grating etched at the surface of a p-n photodiode fabricated by a process compatible with a standard silicon CMOS technology. When two coherent light beams are collimated toward the surface of the device, the detected optical power generates a current depending on the relative phase between the two incident beams. The operating principle of this detector and the results obtained by finite-difference time-domain modeling are presented. The fabrication process of the first devices is described and the experimental validation of the concept is demonstrated.