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Spin transport through a ZnSe‐based diluted magnetic semiconductor resonant tunneling structure in the presence of electric and magnetic fields

Spin‐dependent tunneling of electrons in asymmetric double quantum wells and barriers composed of different sequences of diluted magnetic and nonmagnetic well and barrier materials are investigated theoretically for ZnSe‐based semiconductor heterostructures in the presence of parallel magnetic and electric fields. In the studied systems the transmission of electrons and the degree of spin polarization depends on the strength of the magnetic (due to the s–d exchange‐enhanced spin splitting) and electric fields and on the direction of the applied bias, resulting in a highly spin polarized gas. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)