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High Growth Rate of Microcrystalline Silicon Films Prepared by ICP-CVD with Internal Low Inductance Antennas

The plasma parameters in ICP-CVD system with internal low inductance antennas (LIA) were diagnosed by Langmuir probe. The ions density (Ni) reached 1011−1012 cm−3, and the electron temperature (Te) was below ca. 2 eV, which was slightly decreased with applied power. A p-type hydrogenated microcrystalline silicon (μc-Si:H) film was prepared on glass substrate. After optimization of the processing parameters in flow ratio of SiH4:B2H6:H2, a high quality μc-Si:H film with deposition rate above 1.0 nm/s was achieved in this work.