{'fraction_non_alphanumeric': 0.033203125, 'fraction_numerical': 0.009765625, 'mean_word_length': 5.6558441558441555, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 1, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Amorphous silicon core-shell nanowire Schottky solar cells

Nanostructures such as nanoparticles and nanowires have been demonstrated as powerful tools to improve light absorption[1–4], to enable low temperature process[5], to demonstrate multi-exciton generation[6], and to decouple the absorption depth and carrier diffusion length[7, 8]. Here we demonstrated the first amorphous silicon core-shell nanowire solar cells, which can be fabricated through a low temperature, scalable processes. A simple Schottky based nanowire device structure is used to demonstrate the concept[9]. The device demonstrated much higher short circuit current (>150%) compared to the control thin film device, because of improved carrier collection. A core-shell nanowire solar cells based on p-i-n configuration is also proposed to further increase the efficiency. It provides a viable pathway to solve the mismatch between carrier diffusion length and absorption depth in amorphous silicon and to dramatically improve the device performance.