{'fraction_non_alphanumeric': 0.030425963488843813, 'fraction_numerical': 0.017241379310344827, 'mean_word_length': 5.5364238410596025, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Scanning Tunneling Microscopy for the Study of the Synchrotron-Radiation Stimulated Processes; Synchrotron-Radiation Stimulated Desorption of SiO2 Films on Si(111) Surface

We have constructed a scanning tunneling microscopy (STM) system for the study of synchrotron radiation (SR) stimulated photochemical reactions. In order to eliminate the vibration and acoustic noise, the entire UHV chamber is mounted on a high-performance air-suspended vibration isolation table and was also covered by the soundproof mat. The mechanisms for SR stimulated desorption of SiO2 thin films on the Si(111) surfaces have been investigated using the STM, low energy electron diffraction (LEED), and Auger electron spectroscopy. An atomically flat and clean Si(111)-(7×7) surface was obtained after two hours SR irradiation at a surface temperature of 700 °C. The STM topograph suggests that the desorption mechanism may be completely different between thermal and SR stimulated desorption of SiO2 film.