{'fraction_non_alphanumeric': 0.032985156679494226, 'fraction_numerical': 0.030236393622869707, 'mean_word_length': 4.705329153605016, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Structural and dielectric studies of A-site substituted BiFeO3

In this presented work, we report the synthesis and characterization of A-site doped multiferroic BiFeO3 by La3+ and Ba2+ The perovskite Bi1-x (Lax-y Bay)FeO3 (x = 0.1, y = 0, 0.05) samples were synthesized using high temperature solid state reaction route and were characterized for structural studies using X-ray diffraction and Raman spectral studies. The Bi(La/Ba)FeO3 samples were further studied for frequency dependent dielectric properties at room temperature. The XRD spectrum analysis infers the samples to be crystalline in nature as well as single phased. The XRD spectral study of as synthesized samples further reveals their crystallization into the trigonal structure with an assigned space group R3c. The intense reflection peaks witness the crystallinity and narrow fullwidth at half maximum indicate the higher average particle size. The average particle size calculated using Scherrer’s formula was 47.39nm for La and 34.32 nm for La/Ba doped BiFeO3. The lattice parameters calculated for La doped BiFeO3 were a = b = 5.5771A and c = 13.8021A and La/Ba doped BiFeO3 were a = b = 5.5844 A and c = 13.8215 A which witness acquired trigonal structure. The dielectric studies reveal the Bi1-x (Lax-y Bay)FeO3 (x = 0.1, y = 0, 0.05) samples to be good dielectric in nature with lower dielectric loss values. The ac conductivity study reveals the samples to be resistive to the applied field to a higher value thereby does not respond but after the certain limit of the applied field, the conductivity abruptly increases which is attributed to the release of the charge carriers by the trap centers after a threshold voltage. The intriguing dielectric and loss character infer these samples is feasible for electo-magnetic device application.