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Si Depth Profiles in Focused-Ion-Beam-Implanted GaAs

Depth distribution of implanted Si into GaAs using a focused-ion-beam (0.2 µm diameter, 160 keV) was profiled by means of differential Hall effect measurement and secondary ion mass spectroscopy. As compared to conventional unfocused-ion-beam implantation, implantation with a focused ion beam of high current density at high doses results in broadened profiles of the implanted Si at greater depths. This is probably caused by radiation-enhanced migration of the implanted Si during implantation.