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Tailoring of interfaces in amorphous silicon–germanium multilayers on the atomic scale by ultra-high gravity

Amorphous Si/Ge multilayers containing diffuse interfaces have been prepared, heated in an ultra-centrifuge and subsequent interface structure modifications observed by X-ray reflectivity. The thickness of the Si/Ge and Ge/Si interface zones became asymmetrical owing to various effects occurring on the different atoms parallel to the direction of gravity-induced diffusion. The technique could prove useful for tuning physical (electronic, magnetic or optical) properties of layered structures.