{'fraction_non_alphanumeric': 0.026533996683250415, 'fraction_numerical': 0.01990049751243781, 'mean_word_length': 5.163265306122449, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Manipulation and decoherence of acceptor states in silicon

Dielectric constant and absorption measurements on boron-doped silicon samples show that transitions between the acceptor energy levels can be induced by an applied resonant AC electric field and the Stark tuning of level spacing with an external DC electric field. The relatively longer decoherence times, T2=2.6 μs and T1=7.4 μs, were observed by the electric echo measurement in a low boron dopant concentration Si sample (8×10−12 cm−3). The scalable acceptor-based system is a promising candidate of the charge qubit for quantum computing.