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Weak Antilocalization in Si δ-Doped InxGa1-xAs Systems

We have investigated the transport properties of a quasi-two-dimensional electron gas in Si δ-doped Inx Ga1-x As/GaAs (001) systems with x=0.2 and 0.3 at T=0.3–3 K. A large electron density of 8.4×1016 m-2 is obtained for the doping density 1017 m-2. We have evaluated the phase breaking time and the spin-orbit scattering time by means of the weak antilocalization effect. The two-dimensional electron-electron interaction in disordered systems is found to be responsible for the dephasing.