{'fraction_non_alphanumeric': 0.013651877133105802, 'fraction_numerical': 0.005119453924914676, 'mean_word_length': 5.311827956989247, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
A study of emission from the (1,1,1) faces of GaAs negative electron affinity photoemitters

The GaAs negative electron affinity photoemission mechanism is studied using the full Bloch wave nature of the incident electron. It is found that the experimentally observed anisotropy between A and B faces is a basic result of the heteropolar nature of the GaAs, contrary to previous interpretations. The physical principles behind the numerical results are illustrated and analysed using a simple method for the scattering which illustrates the origin of the very large anisotropy observed.