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Silicide formation and dopant diffusion in silicon.

Recently, we reported that formation of Pd 2 Si from Pd induced asymmetric diffusion of buried dopant marker layers in the silicon substrate at surprisingly low temperatures (∼200 o C) [M. Wittmer, P. Fahey, G. J. Scilla, S. S. lyer, and M. Tejwani, Phys. Rev. Lett. 66, 632 (1991)]. We concluded that asymmetric diffusion could not be readily explained within the framework of existing diffusion theories