{'fraction_non_alphanumeric': 0.011273957158962795, 'fraction_numerical': 0.0, 'mean_word_length': 5.883720930232558, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Point defect based modeling of low dose silicon implant damage and oxidation effects on phosphorus and boron diffusion in silicon

Point defect kinetics are important for understanding and modeling dopant diffusion in silicon. This article describes point defect models and compares them with experimental results for intrinsically doped material. Transient dopant diffusion due to low dose silicon implant damage can be modeled with the same parameters as oxidation enhanced diffusion, and therefore provides an additional technique to probe point defect behavior. Parameters are extracted consistently for both experimental conditions and fit to Arrhenius relationships. The theory of dopant‐defect pairing is found to be crucial in modeling the implantation damage effects, and the effective binding energies for boron‐defect and phosphorus‐defect pairs are experimentally determined.