{'fraction_non_alphanumeric': 0.036231884057971016, 'fraction_numerical': 0.020703933747412008, 'mean_word_length': 5.403973509933775, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Time-differential perturbed-angular-correlation study of 111In-111Cd in III-V compounds.

The hyperfine interactions of {sup 111}Cd in GaP, GaAs, GaSb, AlSb, and InSb were determined by means of the time-differential perturbed-angular-correlation technique. Doping with {sup 111}Cd was achieved by ion implantation of the parent radioactive atom {sup 111}In. After removal of radiation damage by thermal annealing the hyperfine interactions were studied in the temperature range 20--300 K. The results are compared with those of similar experiments recently reported for diamond-structure semiconductors and are also explained in terms of a distorted configuration of atoms surrounding the probe ion where holes may be bound. In addition, radiation-damage characteristics, thermal-annealing behavior, evidence of nonstoichiometry in GaSb, and the temperature dependence of the quadrupole interaction of probes in both gallium- and antimony-rich phases are discussed.