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Analysis the Photo-Electric Characteristics of Quantum Corrected Horizontally Doped Si/4H-SiC Multi-Layers Avalanche Photo Sensor for Application in Bio-Medical Region

In this paper, Quantum Corrected (QMC) horizontally doped Si/4H-SiC multi layers avalanche photo sensor (APS) has been developed for application in bio-medical domain. The photo electric characteristics of the developed photo sensor has been analysed in terms of photo current, photo responsivity and quantum efficiency in 300nm – 900nm wavelength region. These all parameters have been improved considerably by incorporating Si/4H-SiC multi layers structure into the active region of the devices. Recently demand of such bio-medical photo-sensors is increasing significantly for identification of anti-bodies and virus in human blood. The validity of newly developed model has been established by comparing the simulated result with the reported experimental data. The photo electrical characteristics analysis of the designed QMC model-based Si/4H-SiC multi layers avalanche photo sensor depict that the photo current is ~20μA whereas the photo responsivity and quantum efficiency are ~0.65A/Wand ~0.67 respectively. The results clearly establish the superiority of proposed photo-sensor for developing medical instruments in visible wavelength region (300nm – 900nm).