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Growth and Properties of Low-Resistivity n-Type ZnSe Crystals Grown from the Melt with Excess Zn under Argon Pressure

This paper describes a technique for growing low-resistivity n-type ZnSe crystals from the melt under pressure and the electrical and optical properties of the crystals. The low-resistivity ZnSe crystals are grown from the melt with excess Zn of 3 to 9.3 mol%. The resistivity of the crystals is of the order of 0.1 Ω·cm and the electron Hall mobility is 220 to 380 cm2/Vs. Near-band-edge emission is observed from the low-resistivity ZnSe crystals at room temperature in photoluminescence measurement.