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The effective method of reducing slurry for interlayer dielectric CMP

Recently chemical mechanical polishing (CMP) became a routine process in semiconductor manufacturing process. However one problem is that the slurry consumption in CMP process is very large. Some experiments are aimed at reducing slurry consumption. Our research showed that the slurry was needed only at the start of polishing in ILD CMP and that we could planarize without slurry after the midpoint of polishing. This paper describes a method of reducing slurry for interlayer dielectric CMP and we predict that the application of this method to our ILD CMP process could reduce waste slurry by about 50%.