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Modeling and performance analysis of high-speed, high-power GaN nanowire FETs

One-dimensional nanostructures such as nanowires (NWs) and nanotubes are of considerable interest due to their potential for nanoelectronics and nanophotonics. Gallium nitride (GaN) NWs have attracted attention for applications in high-speed, high-power field effect transistors (FETs) due to their wide bandgap (3.2 eV for bulk GaN). There are reports in the literature on the experimental realizations of GaN NW FETs [1].