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New compact ECR plasma source for silicon nitride film formation in minimal fab system

A compact magnetic-mirror confined ECR plasma source for low-damage plasma processings was developed, especially aiming for the realization of high-quality silicon nitride film formation for the sub-micron CMOS device processes in the minimal fab system. Magnetically-confined plasma could be produced, and the wet-etch resistance against HF solution for the silicon nitride film formed at 400 °C was the same level as that of the film formed by the conventional LPCVD at 750 °C.