{'fraction_non_alphanumeric': 0.028070175438596492, 'fraction_numerical': 0.012280701754385965, 'mean_word_length': 4.71, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
High Dose Rate Burnout in Silicon Epitaxial Transistors

This paper presents experimental results for ionizing radiation-induced burnout in n-p-n transistors. The results indicate a dose-rate and a collector bias threshold for transistor burnout. The collector voltage threshold was shown to be on the order of 2/3 BVCEO and the dose-rate threshold was shown to be on the order of 2 × 1010 rad(Si)/s. The triggering mechanism was postulated to be caused by high current injection which results in avalanche breakdown fields developing across the n-n+ substrate boundary.