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Surface Recombination Velocity Imaging of HF-Etched Si Wafers Using Dynamic Heterodyne Lock-In Carrierography

Surface electronic quality of wet-cleaned Si wafers was characterized quantitatively and all-optically via spatially-resolved surface recombination velocity (SRV) imaging using InGaAs-camera-based dynamic heterodyne lock-in carrierography. Six samples undergone four different hydrofluoric special-solution etching conditions were tested, their SRV distributions at different queue times after the hydrogen passivation processes were obtained, and a quantitative assessment of their surface electronic quality was made based on the evolution behavior of globally-integrated information from the SRV images. The data acquisition time for an SRV image with full camera pixel resolution was about 3 min. The methodology introduced here is promising for in-line nondestructive testing/evaluation and quality control at different fabrication/manufacturing stages in the electronic industry. Keywords: heterodyne lock-in carrierography, surface recombination velocity, quantitative imaging, HF etching, Si wafers