{'fraction_non_alphanumeric': 0.03691275167785235, 'fraction_numerical': 0.013422818791946308, 'mean_word_length': 4.737179487179487, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
High Performance Micro-Crystalline Silicon TFT Using Indirect Thermal Crystallization Technique

High performance micro-crystalline silicon (μc-Si) TFT was fabricated by 5 mask process. Indirect thermal crystallization (ITC) method was applied to crystallize amorphous silicon (a-Si) thin films. ITC technique adopted infrared laser with 808 nm wavelength and heat transition layer of Molybdenum on a-Si. We analyzed the crystallinity of a-Si with the width of crystallization which is marked by semiconductor laser beam on the surface of a-Si films. Crystallinity of μc-Si films was calculated by Raman spectra and it shows correlation of field effect mobility with crystallinity. Field effect mobility of TFTs using infrared laser crystallization method has been reported from 3.1 cm/Vs to 3.3 cm/ V·s [1, 2]. On the other hand, we achieved field effect mobility of 6.2 cm /V·s in this study.