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Enhanced Hybrid Active-Neutral-Point-Clamped Converter With Optimized Loss Distribution-Based Modulation Scheme

The active-neutral-point-clamped (ANPC) converter is a prominent topology for medium voltage applications. To realize a high-power-density three-level ANPC converter, silicon carbide (SiC) MOSFETs may be used but they also lead to an extremely high cost. Thus, it is important to properly utilize the SiC switches in order to achieve not only a highly efficient but also a low-cost system. In this article, a three-level enhanced hybrid ANPC (E-HANPC) structure is proposed, which optimally utilizes both Si insulated gate bipolar transistors (IGBTs) and SiC MOSFETs to achieve these objectives. A dedicated modulation scheme is also proposed that enables a reduction in the conduction and switching losses and, hence, higher efficiency is achieved. The presented method optimally distributes the losses amongst the converter switches that leads to enhanced power handling capability of the E-HANPC converter. Moreover, the proposed converter also achieves short-length commutation loops for the high-frequency SiC MOSFETs, which imparts fast-switching capability with reduced overvoltage stress on these switches. To validate the efficacy of the proposed converter and modulation scheme, extensive simulation and analytical studies are performed. A prototype of the single-phase leg of the E-HANPC converter is also developed to validate its feasibility, proposed principles, and reconfirm the simulation and analytical findings.