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Analysis of Dielectric Properties of PVA/PEG/In2O3 Nanostructures for Electronics Devices

The dielectric characteristics of PVA/PEG/In2O3 nanostructures were tested to use in various electric nanodevices. The films of nanostructures of PVA/PEG/In2O3 were synthesized by casting solution technique. The dielectric characters of PVA/PEG/In2O3 nanostructures were determined. Results expressed that the dielectric parameters of PVA/PEG were rise with rise in the In2O3 NPs ratio. The performance of ε', ε" and σAC with frequency illustrated that the ε' and ε" reduced whereas the σAC rises with rise in frequency. The final results demonstrated the PVA/PEG/In2O3 nanostructures may be suitable in various electrical nanodevices.