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Zn and Si Ion Emission from Au-Zn-Si LM Ion Source

An Au-Zn-Si LM (liquid metal) ion source for Zn ion beam, which can promote a compositional disordering of GaAs-AlAs superlattices as well as act as a p-type dopant in III-V compound semiconductors, has been demonstrated. The lifetime of this source was restricted to about 50 hours due to a selective evaporation of Zn atoms from the liquid alloy surface. However, the vapor pressure of Zn in the alloy at 410°C was estimated to be 2.3×10-3 Pa (1.7×10-5 Torr). This value is 4 orders smaller than that of elemental Zn.