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Investigation of 4500 V FRD Implanted from Cathode with Different Depths Using 1-D Varied Doping

A 4500 V fast recovery diode (FRD) implanted from cathode with different depths using 1-D varied doping is investigated with SRIM, MATLAB and Sentaurus TCAD in this paper. The defect concentrations of FRDs caused by He ions implantation[1-4] from cathode with 100μm and 120 μm injection depths are defined with SRIM. Especially, the minimum value of minority carriers life time of 100 μm injection depth is outside the space charge region, whereas that of 120 μm injection depth is inside the space charge region. Then the corresponding lifetime profiles of both types of FRDs are calculated with MATLAB for simulation in the Sentaurus TCAD. The electrical parameters of the FRD with 100 μm injection depth, such as forward voltage drop, breakdown voltage, and reverse recovery characteristics, exhibit superior improvements than that of conventional 120 μm one. This phenomenon demonstrates that controlling the minimum lifetime of a minority carriers outside the space charge region will make the device have better performance, which provides a guidance for future diode research.