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Subthreshold Modeling of Tri-Gate Junctionless Transistors With Variable Channel Edges and Substrate Bias Effects

In this paper, subthreshold channel potential, current, swing, threshold voltage, and drain-induced barrier lowering models of short-channel tri-gate junctionless field-effect transistors are presented. The models incorporate the effects of both substrate-induced surface potential and variable edges of channel. The quasi-3-D approach is used for the modeling of minimum of channel potential that is subsequently used in the drift–diffusion equation to obtain the current expression in subthreshold regime. Threshold voltage and subthreshold swing models are also based on the minimum of channel potential. The analytical results are compared with the simulation data obtained using 3-D visual TCAD device simulator from Cogenda Pvt., Ltd.