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Zirconium-doped indium oxide thin films for organic light-emitting diodes

Transparent and highly conducting zirconium-doped indium oxide (ZIO) thin films have been grown by pulsed laser deposition (PLD) on glass substrates without a post- deposition anneal. The structural, electrical and optical properties of these films were investigated as a function of film composition and substrate deposition temperature. Films were deposited using a KrF excimer laser (248 nm, 30 ns FWHM) at a fluence of 1 J/cm2 at growth temperatures ranging from 20 degrees Celsius to 400 degrees Celsius in oxygen pressure ranging from 1 mTorr to 25 mTorr. The films (approximately 2000 angstrom thick) deposited at 200 degrees Celsius in 25 mTorr of oxygen show electrical resistivities as low as 2.7 X 10-4 (Omega) -cm, the average visible transmittance of 89%, the refractive index of 1.99 and optical band gap of 4.1 eV. These ZIO films were used as a transparent anode contact in organic light emitting diodes (OLEDs) and the device performance was studied. The external quantum efficiency measured at 100 A/m2 for the [ZIO/TPD/Alq3/MgAg] diodes was about 0.9%. Low driving voltage and high light emission were observed for the OLEDs with the ZIO anode.