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A physics based approach to ultra-shallow p/sup +/-junction formation at the 32 nm node

The kinetics of boron electrical activation are studied for both pre-amorphized (PAI) and non-amorphized (non-PAI) samples. It is found that the electrical activation mechanism in both cases is similar and is dominated by a 5 eV native point defect driven activation energy barrier, substantially greater than the 3.5 eV diffusion activation energy. The physical origins of this mechanism are explained through atomistic simulations and the physical basis of the activation energy difference was used to design a flash anneal capable of achieving highly active and ultra shallow p-type junctions meeting the 32 nm node ITRS specifications.