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Optical and Electrical Characteristics of InGaAsP MQW BH DFB Laser Diodes

In this paper we present lasing delay time, optical and electrical low-frequency noise, and correlation factor between optical and electrical fluctuations for multiple-quantum-well gain-coupled buried-heterostructure distributed-feedback laser diodes with thyristor-type blocking layer. The investigated laser diodes had very low threshold current (6-8 mA) and lasing delay time ( 100 mA). The investigated lasers exhibited thyristor-like turn-on at currents >100 mA.