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Quantum Corrections to the 'Atomistic' MOSFET Simulations

We have introduced in a simple and efficient manner quantum mechanical corrections in 
our 3D ’atomistic’ MOSFET simulator using the density gradient formalism. We have 
studied in comparison with classical simulations the effect of the quantum mechanical 
corrections on the simulation of random dopant induced threshold voltage fluctuations, 
the effect of the single charge trapping on interface states and the effect of the oxide 
thickness fluctuations in decanano MOSFETs with ultrathin gate oxides. The introduction 
of quantum corrections enhances the threshold voltage fluctuations but does not 
affect significantly the amplitude of the random telegraph noise associated with single 
carrier trapping. The importance of the quantum corrections for proper simulation 
of oxide thickness fluctuation effects has also been demonstrated.