{'fraction_non_alphanumeric': 0.018404907975460124, 'fraction_numerical': 0.0, 'mean_word_length': 5.044444444444444, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
A Simple Model of a Single-Electron Floating Dot Memory for Circuit Simulation

A new simulation technique for a single-electron floating dot memory based on a semiclassical single-electron transistor is proposed. It is designed to be suitable for use in circuit simulation and it uses a Monte Carlo method in combination with the master equation. Current-voltage characteristics of the sensing single-electron transistor are modeled on the steady-state master equation. Stochastic charging and discharging of the memory dot is simulated by the Monte Carlo method. Our model is faster than the master equation method alone. In addition, drain current of the transistor can be calculated accurately at every instant in the transient simulation, which is time-consuming with the conventional Monte Carlo method alone.