{'fraction_non_alphanumeric': 0.04218928164196123, 'fraction_numerical': 0.01596351197263398, 'mean_word_length': 4.814569536423841, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Interaction and ohmic contact between NiCr alloy and a-Si:H thin films at low temperatures

An array of transfer length mode (TLM) structures were designed and made on electrically isolated phosphourous -doped hydrogenated amorphous silicon (a-Si:H) thin films. Annealing effects on NiCr/a-Si:H contacts in the temperature rang from 100 °C to 400°C were studied. Electrical measurements were performed to characterize the interaction of the contact between NiCr alloy and doped a-Si:H thin films. It is found that the specific contact resistance decreases with elevated annealing temperatures. Annealing of NiCr/a-Si:H contacts at 400 °C in N2 leads to a lower specific contact resistance of 4.15 Ω•cm2 due to good adhesion of the NiCr/a-Si:H interface. The NiCr/a-Si:H contacts could not be scratched with a tungsten carbide scriber, nor delaminated from the a-Si:H substrate.