{'fraction_non_alphanumeric': 0.03753351206434316, 'fraction_numerical': 0.0160857908847185, 'mean_word_length': 4.533333333333333, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Cd and Impurity Redistribution at the CdS/CIGS Interface After Annealing of CIGS-Based Solar Cells Resolved by Atom Probe Tomography

Cd and impurity redistribution in the vicinity of the CdS/C(In,Ga)Se2 (CIGS) interface is studied by means of atom probe tomography. We find an increase of the Cd content in the CIGS layer and redistribution of O (in form of O+ and OH+) at the CdS/CIGS interface after annealing the samples at 200, 250, and 300 °C. About 0.2 at% of Na impurity is observed at the interface, across the range of heat treatments performed here. Simultaneously, the J-V measurements of the treated samples show a drop in the open-circuit voltage and fill factor, and thus of the cell efficiency, compared with the untreated sample.