{'fraction_non_alphanumeric': 0.03818615751789976, 'fraction_numerical': 0.0059665871121718375, 'mean_word_length': 4.668918918918919, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Analytical model of signal amplification in silicon waveguides

In this paper, an analytical model to investigate the parametric amplification (PA) and the PA + stimulated Raman scattering (SRS) in silicon waveguides is put forward. When two pump signals are employed, the PA bandwidth of the probe signal is so large that the Raman contribution has to be considered. When Raman contribution fraction f is set to be 0, only the PA occurs to amplify the probe signal, and when f is set to be 0.043, the PA and the SRS amplify the probe signal at the same time. The signal amplifications of both single and dual pump schemes are investigated by using this model. With this model, three main affecting factors, i.e., zero dispersion wavelength (ZDWL), third-order dispersion (TOD), and fourth-order dispersion (FOD), are discussed in detail.