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Effect of Illumination and Bias Field on Semiconductive CdS Monolithic Convolver with High-Resistivity Surface Layer

Characteristics of semiconductive CdS monolithic convolvers with high-resistivity surface layer are demonstrated. It is found that the convolution effect under light illumination is based on two nonlinear mechanisms, nonlinear current and nonlinear capacitance. The convolution under nonuniform carrier generation in the high-resistivity layer by illumination with neargap radiation is caused mainly by nonlinear capacitance, while uniform carrier generation in the high-resistivity layer enhances the convolution output by nonlinear current mechanism. Application of positive pulsed bias to the gate electrode notably enhances the convolution output due to varactor action in the high-resistivity surface layer.