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I-V properties of heterostructures of superconductor ferroelectric junction

We have grown a heterostructure of YBCO/STO/YBCO on (100) MgO substrate for fabrication of SXS junction. The epitaxial YBCO films were grown by MOCVD method, and the STO layer was deposited by unbalanced magnetron sputtering method. All of films are dominated by a-axis oriented phases. The individual YBCO films revealed critical-current densities around 2.5 X 105 A/cm2 at 77 K. The resistive transition observed in the vertical transport devices is dominated by the X layer properties. These devices display RSJ-type I-V characteristics and the values of IcRn significantly depend on the X layer thickness. The SXS junction with STO layer of 0.1, 0.2 and 0.3 micrometers have IcRn of 115, 90 and 42 (mu) V, respectively.