{'fraction_non_alphanumeric': 0.03849443969204448, 'fraction_numerical': 0.03934987168520103, 'mean_word_length': 4.85, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Influence of substrate temperature on the structural, optical and electrical properties of zinc selenide (ZnSe) thin films

Zinc selenide (ZnSe) thin films were deposited onto well cleaned silicon (100) and glass substrates at different substrate temperatures (483–589 K) using vacuum evaporation method under a vacuum of 4 × 10−3 Pa. The compositions of the deposited films were determined by Rutherford backscattering spectrometry and the percentage of iodine concentration is calculated as (ZnSe)I0.001. The x-ray diffractograms reveal the cubic structure of the film oriented along the (111) direction. In optical studies, the transition of the deposited film is found to be a direct allowed transition. The optical energy gaps of the deposited films are found to be in the range from 2.72 to 2.60 eV. ZnSe/silicon Schottky diodes were fabricated. From the current–voltage measurement the ideality factor was found to be in the range 2.01–3.51. From the capacitance–voltage studies, the built in potential was found to be 1.51 V. The values of effective carrier concentration (NA) and the barrier height are calculated as 4.37 × 1011 cm−3 and 1.95 eV, respectively.