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Hysteretic three-photon cyclotron resonance in semiconductors.

We predict a hysteretic three-photon cyclotron resonance in narrow-gap semiconductors driven by two laser beams with their frequency difference near the cyclotron frequency. This effect is based on the Doppler and Lorentz nonlinear mechanisms and the nonparabolicity of the conduction band. A CO(2) laser intensity of 10(5)-10(6) W/cm(2) at 10.6 and 9.4 microm is required for observation of the effect at 83.03 microm in InSb, GaAs, or HgTe.