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Thin film BIMOS transistor for low-power spiking neuron design in 28nm FD-SOI CMOS technology

Neuromorphic computing is an emerging field of investigation for new algorithm solutions and daily life applications. We investigate a novel design to achieve a spiking neuron operator which uses BIMOS transistor combined with a capacitor and a NMOS bias transistor. The devices are integrated on thin silicon film in 28 nm high-k/metal-gate standard CMOS technology. The proof of design is introduced through 3 dimensional technology computer-aided design (3D TCAD) numerical simulations, and then validated by electrical characterization of the 2T/1C demonstrator. High spiking performance with very low power consumption is obtained. In addition, the spiking neuron design benefits from intrinsic electro-static discharge (ESD) robustness.