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Efficiency improvement of the structure InGaN/GaN for solar cells applications

In this work, we were interested about the study of modeling and simulation of a structure based on In1-xGaxN/GaN for photovoltaic applications. This ternary alloy who is an III-V semiconductor presents important characteristics especially its bandgap energy, thus the enhancement of the absorption of photons with wavelengths near to red. We had also studied a different parameters characterized the solar cell which served us to calculate the efficiency of photovoltaic conversion. For the In0.35Ga0.65N/GaN structure, we obtained efficiency around 23%. This study of structures allowed us to fabricate structures for solar cells based on multi-junction.