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Highly linear heterogeneous-integrated Mach-Zehnder interferometer modulators on Si.

In this paper we demonstrate highly linear Mach-Zehnder interferometer modulators utilizing heterogeneous integration on a Si substrate (HS-MZM). A record high dynamic range was achieved for silicon devices, obtained using hybrid III-V/Si phase modulation sections and single drive push-pull operation, demonstrating a spurious free dynamic range (SFDR) of 112 dB∙Hz2/3 at 10 GHz, comparable to commercial Lithium Niobate MZMs.