{'fraction_non_alphanumeric': 0.02809917355371901, 'fraction_numerical': 0.0049586776859504135, 'mean_word_length': 5.65934065934066, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
High-Frequency Modeling of On-Chip Coupled Carbon Nanotube Interconnects for Millimeter-Wave Applications

This paper presents a high-frequency equivalent circuit model for on-chip coupled carbon nanotube (CNT) interconnects up to 100 GHz. By simplifying the circuit model, the S-parameters of on-chip coupled interconnects can be acquired and validated by comparing with the full-wave electromagnetic simulations. By virtue of effective complex conductivity, the high-frequency behaviors of coupled CNT interconnects are captured and studied, with the impacts of kinetic inductance treated appropriately.