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The Potential of Phosphorene Nanoribbons as Channel Material for Ultrascaled Transistors

Transport properties of realistic phosphorene nanoribbons (PNRs) with edge defects are studied by using statistical atomistic quantum transport simulations. Regarding the impact of nanoribbon width downscaling and increasing of edge defect percentage, we show that PNRs exhibit qualitatively similar behavior of the ON- and OFF-state conductance, and of the ON–OFF conductance ratio as graphene nanoribbons (GNRs). However, we demonstrate that PNRs are superior to GNRs in terms of the absolute values of the conductance parameters, and that PNRs are much more immune to edge defects than their graphene counterparts. This paper identifies PNRs as a more promising channel material than GNRs for the extremely scaled postsilicon transistor technology.