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Study of point defects in CdTe:Mn crystals by electrical measurements supported by positron lifetime spectroscopy

For СdTe:Mn crystals we investigated the temperature dependence (TD) of the Hall constant R<inf>H</inf> and the Hall carrier mobility μ<inf>n</inf> (σR<inf>H</inf>) in the range from 773 to 1073 K. At 300 K as-grown СdTe:Mn possesses either n- or p-type conductivity depending on the Mn concentration (10<sup>18</sup>-10<sup>20</sup> at/cm<sup>3</sup>) in the melt during crystal growth. At higher temperature ~800 K all samples showed only n-type conductivity. Based on the temperature dependence of the electron mobility the formation of a space charge region (SCR) at T~800 K was concluded which leads to a subsequent substantial decrease of the electron mobility at higher temperature. From the analysis of the electron concentration dependence in the CdTe:Mn samples on the Cd vapor pressure at a constant temperature it can be observed that for the CdTe:Mn crystals, the corresponding dependence lines lie above those values for the undoped CdTe crystal. Therefore, it indicates that doping with Mn leads to an incorporation of additional donor centers.Positron lifetime spectroscopy (PLS) at 290 K revealed only one lifetime component (τ<inf>1</inf>) in the case of p-CdTe:Mn and two lifetime components (τ<inf>1</inf>, τ<inf>2</inf>) in the case of n-CdTe:Mn. The shorter lifetime τ<inf>1</inf> can be attributed to positron annihilation in the defect-free state of the bulk crystal. A presence of the longer lifetime τ<inf>2</inf> indicates positron annihilation in vacancy-related defects. Based on the results of PLS it was estimated that the vacancy concentration V<inf>Cd</inf><sup>2-</sup> was equal or below 10<sup>15</sup> cm<sup>-3</sup> (p-CdTe:Mn) or was in the range of 1.5×10<sup>16</sup> to 6.5×10<sup>16</sup> cm<sup>-3</sup> (n-CdTe:Mn). The higher concentration of cadmium vacancies in n-CdTe:Mn crystals can be explained by a self-compensation effect.