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Nitride semiconductor light emitting device

A nitride semiconductor light emitting device is provided to improve the brightness of a light emitting device by forming a void region at a reflective pattern on a substrate surface to have a different refractive index to each other. An n-type nitride layer(115), an active layer(117), and a p-type nitride layer(119) are formed on a substrate(111). Plural ring-shaped reflective patterns(131) are formed on a surface of the substrate. A void region(134) is formed at a center of the ring-shaped reflective pattern. The ring-shaped reflective pattern is a cone shape. The reflective pattern is formed with a ring-diameter of 1.5 to 2 ‘i. A height of the ring-shaped reflective pattern is 1.5 to 2 ‘i. The diameter of the ring-shaped reflective pattern is less than 5 ‘i. An interval of the ring-shaped reflective pattern is 2 to 3 ‘i. The ring-shaped reflective pattern is regularly or randomly formed on the surface of the substrate.