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HnCdTe Charge Transfer Device Focal Planes

Metal-Insulator-Semiconductor (MIS) detectors fabricated in HgCdTe offer significant advantages for focal plane applications. These detectors perform noise free signal intearation directly in the HoCdTe, can be formed in either n- or p-type material, do not require formation of a metallurgical junction, and are easy to interface to low power signal processing integrated circuits in silicon. Furthermore, this device technology readily facilitates the formation of charge transfer devices which perform some signal processing in the HaCdTe prior to transfer of the signal to the silicon processor.