{'fraction_non_alphanumeric': 0.029411764705882353, 'fraction_numerical': 0.0, 'mean_word_length': 5.040322580645161, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
A design criterion to ameliorate ohmic contact to n‐GaAs

A metal n+‐n semiconductor structure is ohmic for a n+ region larger than metal semiconductor (M‐S) barrier width. However, if the undepleted n+ region is too thick, the electrons tunneling across the M‐S junction lose energy during transit and may not retain sufficient energy to surmount the n+‐n barrier. The high–low junction thus impedes the carrier motion and adds to the contact resistance of the structure. In the present study, carrier energy loss mechanisms are considered to determine the distance hot electrons travel before losing too much energy to overcome the barrier. The results provide the optimum length of the interfacial n+ layer to ameliorate ohmic contact to n‐GaAs.