{'fraction_non_alphanumeric': 0.04388185654008439, 'fraction_numerical': 0.020253164556962026, 'mean_word_length': 5.308510638297872, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Research on PMnN-PZT Ferroelectric Thin Films on Silicon Substrates

The PZT-based ferroelectric thin films own excellent properties, such as good ferroelectricity and excellent piezoelectricity, and the ternary compound PZT-based thin films especially own more excellent properties, which are available to be widely applied in the fabrications of electromechanical devices. However, how to deposit multi-composition PZT-based thin films is a difficult technology. In this paper, the Pb(Mn1/3,Nb2/3)O3-PbZrO3- PbTiO3((PMnN-PZT)) ternary compound thin films are studied on, The thin films are deposited on Si substrates by the magnetron sputtering method, in which the same ratio of PZ/PT=52:48(PZT(52/48)) and the heterostructure substrates of SrRuO3(SRO)/Pt(111)/Ti /SiO2/Si(100) are adopted, and the quench method is always used after the depositions for the post heat treatments. The lattice structures, the surface and the ferroelectricity of thin films are characterized. The results show that the doping of PMnN with 6% mol percent is proper to obtain excellent PMnN-PZT ferroelectric thin films, and the doping of PMnN effectively improve the ferroelectricity of PZT thin films.