{'fraction_non_alphanumeric': 0.0380818053596615, 'fraction_numerical': 0.028208744710860368, 'mean_word_length': 4.966386554621849, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Growth of high‐quality InSb layer on (001) Si substrate with an initial intermediate‐layer of InAs quantum dots

In this study, we have attempted a growth of InSb film on the cost‐effective, (001)‐Si substrate inserting a thin intermediate‐layer of InAs quantum dots (QDs) at the InSb/Si interface. Analysis of the interface region using transmission electron microscopy reveals that, during the subsequent InSb‐growth process, InAs QDs have disappeared leaving instead a thin interlayer of InAs. The resulting 2.8‐µm‐thick InSb film on (001) Si is found to have an electron mobility of 40 907 cm2/Vs at 300 K, which turned out to be the highest value for InSb with comparable thickness grown on Si substrate.