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High field electron and hole transport in wurtzite InN

A Monte Carlo technique has been used to investigate the steady‐state, transient, and small‐signal transport of electrons and holes in InN in high electric fields. The drift velocities and diffusion coefficients of electrons and holes are calculated using single‐particle Monte Carlo method. The transient drift velocities of electrons and holes are evaluated from ensemble Monte Carlo simulations. The electron small‐signal mobility is estimated. The threshold frequency of 550 GHz for the negative differential mobility (NDM) in InN is obtained.