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Optimization of GaN Based Light Emitters With Semipolar Quantum Wells and Sub-μ m Patterning Within the Active Zone

The selective growth of sub-micrometer sized GaN stripes running along a-direction on c-oriented GaN templates results in semipolar quantum wells (QWs) grown on the {101̄1} side facets that can be embedded easily. Therefore we achieve light emitting devices with semipolar quantum wells on large areas with flat surfaces for easy processing. The influence of the growth mask is thoroughly investigated and structural analysis of the embedded QWs is presented.