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A quantum transport approach to the calculation of gate tunnelling current in Nano-scale FD SOI MOSFETs

As integrated circuits (ICs) become more densely packed with transistors, the conventional MOSFETs approach their physical limits of operation. Thus many novel device structures are being extensively explored. As a substitute Ultra thin Nano scale MOSFETs are one of the potential candidates. It is very attractive one-dimensional material and is useful for future nanoelectronic applications. We have used quantum transport to investigate the effect of scattering due to coupling of the gate contact on the gate tunnelling current. We have developed a proper self energy term which is included within the Hamiltonian formalism for the Poisson Schrödinger solver. It will manifest the coupling of scattering parameter on the gate tunnelling current.