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Inversion of magnetoresistance in La1−xSrxMnO3/Nb-doped SrTiO3/CoFe junctions

Magnetoresistance (MR) devices using degenerated oxide semiconductors, Nb-doped SrTiO3, (Nb-STO) as intermediate layers between two ferromagnets were fabricated and their magnetic and transport properties were evaluated. Magnetic junctions using the trilayer films showed MR of ∼5% at 4.2 K, and the sign and the magnitude of the MR were changed depending on the thickness of Nb-STO layers. The origin of the inversion of the MR is not clear, however we consider spin injection from ferromagnetic electrodes to Nb-STO through Schottky tunnel barriers plays an important role.