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Improved bias stress stability for low-voltage polymer OTFTs with low-k/high-k bilayer gate dielectric

Low-voltage solution-processed organic thin-film transistors (OTFTs) were developed using a large permittivity (high-k) polymer P(VDF-TrFE-CFE). It was shown that by inserting a thin, low-polar dielectric layer (CYTOP) between the high-k one and the channel, the bias stability was much improved due to screening of the dipole field from high-k dielectric.