{'fraction_non_alphanumeric': 0.018970189701897018, 'fraction_numerical': 0.005420054200542005, 'mean_word_length': 5.482456140350878, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Simulation of channeled implantation of magnesium ions in gallium nitride

In the manufacture of power devices, ion implantation into gallium nitride (GaN) to a depth of several microns is a challenge because the activation of such devices is disturbed by the damage caused by implantation. To reduce this damage, a channeled implantation technique was applied to implant magnesium (Mg) ions into GaN (0001). Compared with random implantation, channeled implantation showed implantation and activation of ions in regions up to an order of magnitude deeper. Channeled ion simulation code developed herein successfully reproduced the experimental values, thus enabling the application of this technology to process a power device using GaN.