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Grain boundary-related kink effects of poly-Si TFTs

This paper presents the behavior of grain boundary-related kink effect in poly-si TFTs. As verified by the experimental data and simulation results using the discrete grain/discrete energy level distributed trap approach, the barrier height of the grain boundaries increases with the trap density, the inverse of the grain size and the distance from the drain, which determines the current of the parasitic bipolar transistor and thus the kink effect.