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Dielectric Relaxation and Photo-electromotive Force in Ge-Sb-Te/Si Structures

The dielectric properties and photovoltaic effect spectra in the compositions of amorphous layers GeSb2Te4 (GST 124), Ge2Sb2Te5 (GST 225) и GeSb4Te7 (GST 147) applied on the monocrystallic silicon surface are investigated. It is shown that with a change in the GST composition, both the dielectric capacitivity and the frequency at which the maximum dielectric loss is observed change. It was found that the value of the change in photo-electromotive force is different for different layers: on samples with GST 124, the influence of amorphous layers is by an order of magnitude greater than for GST 225, and by 3 orders of magnitude greater than for GST 147.