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Quantitative Model for Data Retention Loss at NROM Nitride Charge Trapping Devices after Program / Erase Cycling

Introduction Nitride based, localized charge trapping storage flash memory devices with a SONOS stack get increasingly interest due to some advantages compared to conventional floating gate memory devices [1]. One of these is the ability to store multi bits in one single cell. As all Non-Volatile Memories (NVM) these devices suffer from the data retention, too. There are two competing models in the literature: the charge redistribution model [2] and the BOTOX degradation model [3]. In this paper we want to describe an alternative model which simulates the Program/Erase (P/E) cycling dependency for the first time.