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Theoretical Investigation on Silicon-Nitride Film Growth: Statistical Approach

The dependence of SiNx film growth on the initial energy was investigated theoretically using a statistical model based on nonempirical molecular orbital results. Our theoretical calculations successfully explain the experimental finding that it is easier to control the ratio of Si–N and Si–Si bond yields when a mixture of SiH2Cl2 and NH3 rather than that of SiH4 and NH3 is used as the source gas.