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Modeling topological-insulator field-effect transistors using the Boltzmann equation

We model a field-effect transistor making use of the spin-polarized edge states of two-dimensional topological insulators. To account for scattering while respecting Pauli's exclusion principle and the ballistic limit, we employ the Boltzmann equation. We account for phonon-assisted scattering processes and show that the current can be modulated over several orders of magnitude as a function of gate bias.