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Low Dielectric Properties Encapsulation for High Frequency Devices

In this study, we developed a low dielectric loss tangent and low dielectric constant semiconductor encapsulation material and conducted evaluations testing the electrical and flowability performance of the material as well as the reliability of devices assembled with these materials. As a result of this investigation, we demonstrated that with the developed material, the isolation deterioration was suppressed by 4 dB in testing with electromagnetic field coupling between inductors Additionally, we demonstrated that the developed material has good flowability and can provide a high level of environmental reliability such as is required for automotive applications.