{'fraction_non_alphanumeric': 0.02545968882602546, 'fraction_numerical': 0.056577086280056574, 'mean_word_length': 4.7560975609756095, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
A study of radiation effects of 9 and 12 MeV protons on Chinese CMOS image sensor degradation

The 9 and 12 MeV proton irradiations of the Chinese CMOS Image Sensor in the fluence range from 1×109 to 4×1010 cm−2 and 1×109 to 2×1012 cm−2 have been carried out respectively. The color pictures and dark output images are captured, and the average brightness of dark output images is calculated. The anti-irradiation fluence thresholds for 9 and 12 MeV protons are about 4×1010 and 2×1012 cm−2, respectively. These can be explained by the change of the concentrations of irradiation-induced electron-hole pairs and vacancies in the various layers of CMOS image sensor calculated by the TRIM simulation program.