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Magnetic Tunnel Junctions with Assymetric Barriers

In this paper, magnetic tunnel junctions (MTJs) with a low asymmetric barrier are presented. These MTJs can be described by the two-band model of free electrons in ferromagnetic electrodes. The influence of image forces on the tunneling magnetoresistance (TMR) and on the electron current density in MTJs are taken into account. It is shown that the electron current density in the low barrier MTJs is quite enough for the current-driven magnetization switching of the ferromagnetic electrodes. The results obtained here extend considerably the knowledge about the physics of tunnel processes in magnetic nanostructures and can be used for developing MTJs with desired parameters.