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Electrical Improvement of Fluorine-Passivated Metal–Organic Chemical Vapor Deposited TiO2 Film on (NH4)2Sx-treated GaAs

The electrical characteristics of fluorine-passivated polycrystalline TiO2 films on p-type (100) GaAs with (NH4)2Sx treatment were investigated. The fluorine from the fluorinated liquid-phase-deposited SiO2 can passivate the grain boundaries of polycrystalline TiO2 and suppress the leakage current through the grain boundaries. For fluorine-passivated metal–organic chemical vapor deposited TiO2 film on (NH4)2Sx treated-GaAs, the leakage current densities were 3.41 ×10-7 and 1.13 ×10-6 A/cm2 at 1.5 and -1.5 MV/cm, respectively. The interface state density and dielectric constant reached 4.6 ×1011 cm-2 eV-1 and 71, respectively.