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Spatially resolved strain within a single SiGe island investigated by X‐ray scanning microdiffraction

A submicron X‐ray beam was employed to scan a 3.2 µm SiGe island in two directions. At each scanning position, 2D cuts of the reciprocal space close to the (004) Bragg reflection of the Si substrate were recorded with a CCD. From the position of the SiGe island induced diffuse scattering peak on each CCD frame, we detected and analyzed variations of the strain within a selected single island. Our method does not require the recording of the whole 3D reciprocal space at each position in real space, thus avoiding instability problems during data acquisition. We found changes in the strain which are consistent with finite element calculations of the strain within a model island. The knowledge of the strain distribution within SiGe epitaxial structures is relevant for the correct interpretation of their electronic and optical properties.