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A new model for TDDB reliability of porous low-K dielectrics: Percolation defect nucleation and growth

We show that the percolation paths introduced during the initial stages of low-K dielectric breakdown during high-voltage stress are not observable at the low voltages typical of circuit operation. By using a novel 2 stage voltage stress regime to investigate breakdown mechanisms that are typical of circuit operation, we demonstrate that low-K breakdown at low voltages has two components: first, formation (termed “nucleation” here) of the percolation path responsible for increased leakage, and second, the growth of this defect to failure. The defect growth time appears to have similar field dependence as the nucleation time, and appears to be largely area independent, unlike nucleation times, which are strongly area dependent. Consequently, failure times extracted from the growth phase of the breakdown, when extrapolated to circuit areas and operating voltages, exhibit substantial increases compared to the traditional extrapolation methodology, which relies on nucleation times only.