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Nanoscale ballistic diodes made of polar materials for amplification and generation of radiation in the 10 THz-range

We investigate ultrahigh frequency electrical properties of nanoscale n + − i − n + diodes made of polar semiconductors. The calculations show that the coupling between optical vibrations of the lattice and the ballistic electrons strongly modifies and enhances the time-of-flight effects giving rise to narrow resonances of the diode impedance in the reststrahlen frequency range. Particularly, negative dynamic resistance is induced in close proximity to the optical phonon frequency. The resonant effects in the dynamic resistance of nanoscale GaAs and InP diodes are studied in detail. The obtained magnitudes of the negative dynamic resistance effect indicate that the nanoscale diodes are capable of generating electromagnetic radiation in the far-infrared spectral range under electric pumping.We investigate ultrahigh frequency electrical properties of nanoscale n + − i − n + diodes made of polar semiconductors. The calculations show that the coupling between optical vibrations of the lattice and the ballistic electrons strongly modifies and enhances the time-of-flight effects giving rise to narrow resonances of the diode impedance in the reststrahlen frequency range. Particularly, negative dynamic resistance is induced in close proximity to the optical phonon frequency. The resonant effects in the dynamic resistance of nanoscale GaAs and InP diodes are studied in detail. The obtained magnitudes of the negative dynamic resistance effect indicate that the nanoscale diodes are capable of generating electromagnetic radiation in the far-infrared spectral range under electric pumping.