{'fraction_non_alphanumeric': 0.043478260869565216, 'fraction_numerical': 0.020933977455716585, 'mean_word_length': 5.158415841584159, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Formation of a Monocrystalline, M-Plane AlN Layer by the Nitridation of γ-LiAlO2(100)

Using X-ray reflectivity (XRR) measurements and high-resolution transmission electron microscopy (HRTEM), we demonstrate that a thin AlN layer is formed on top of a γ-LiAlO2(100) substrate by a nitridation process using NH3 in a metal organic vapor phase epitaxy (MOVPE) reactor. This thin layer is identified to be monocrystalline, M-plane AlN, enabling the growth of nonpolar M-plane GaN on γ-LiAlO2(100) by MOVPE. HRTEM reveals that this thin nitridation layer is grown pseudomorphically without any detectable misfit dislocations.