{'fraction_non_alphanumeric': 0.032407407407407406, 'fraction_numerical': 0.007716049382716049, 'mean_word_length': 4.794642857142857, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Hydrogen-related metastable defects in passivated n-type GaAs grown by metal-organic vapor-phase epitaxy.

Undoped n-type GaAs grown by metal-organic vapor-phase epitaxy is exposed to a hydrogen or a deuterium plasma. Two dominant deep levels, having energies E c -0.2 eV and E c -0.57 eV, are formed after hydrogenation. Their depths into the material correspond directly with the depth to which the shallow donors have been passivated. Furthermore, isothermal annealing measurements under zero and reverse-bias conditions reveal that the two levels are metastable. The transformations from one configuration to the other obey first-order kinetics