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THEORETICAL INVESTIGATION ON THE PRESSURE BEHA-VIOR OF NITROGEN BOUND EXCITONS IN GaP AND GaAs 1-x P x

Using a Koster-Slater one band-one-side approximation, the relationship between the pressure behavior of nitrogen bound excitons and the band structure is investigated in GaP and GaAs 1-x P x . An analytical expression is found to be a good approximation for the pressure coefficient of the deep impurity state. The pressure coefficients of N and NN i bound exciton states are calculated in GaP and GaAs 0.17 P 0.83 . A tentative new assignment which agrees with experiments in both ordering of levels and pressure coefficients is given for nitrogen pair configurations.