{'fraction_non_alphanumeric': 0.01845018450184502, 'fraction_numerical': 0.008856088560885609, 'mean_word_length': 5.026666666666666, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Thin film growth of TiO2 and Ti2O3 by the new method of liquid injection CVD investigated using optical interferometry, XRD and AFM

The method of liquid injection chemical vapour deposition (LICVD) is a new technique, which is being developed for its potential to allow new material compositions and simpler and more flexible deposition schemes. The potential advantage of this technique is that it is possible to fix the precursor composition(s) in the injection solvent, permitting a simpler injection scheme compared to the current need for bubblers or gaseous precursors in CVD. In our system the precursor solution is rapidly volatilised into a carrier gas stream, which is then passed over the heated substrate. In this initial study we use the single component titanium tetraisopropoxide (TTIP) dissolved in THF for the injection solution, and investigate the behaviour of the deposition with in situ optical reflectometry and ex situ XRD and AFM. The data gained gives information on the growth rate, morphology and crystalline properties of the films. The characteristics of our deposition system are that we find a flux controlled growth mode, changes in the rate of deposition as a function of thickness, which are related to the surface morphology and the growth of Ti2O3 at temperatures above 450 °C. Copyright © 2006 John Wiley & Sons, Ltd.