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Key structure and process for pulsed power switch SiC RSD

This paper focuses on the several key problems in the design and process for the new type pulsed power switch SiC RSD(reversely switched dynistor). By establishing the two-dimensional electro-thermal coupling model, the temperature rise during the turn-on process is discussed. The feasibility of the reverse injection pre-charge caused by avalanche breakdown is proved. The big influence of the carrier lifetime in drift layer and the proper distribution of the cell structure at anode are analyzed. Reasonable ohmic contact results suitable both for P and N type are acquired by process exploring. The surface breakdown voltage is enhanced by the bevel edge termination. The above work has provided basis for realizing the pulse turn-on of SiC RSD.