{'fraction_non_alphanumeric': 0.031578947368421054, 'fraction_numerical': 0.01871345029239766, 'mean_word_length': 5.340740740740741, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Electrical Conductivity of Low-Temperature-Deposited Al0.1Ga0.9N Interlayer

We have realized a conductive AlGaN interlayer which was deposited at low temperatures ranging from 500 to 600°C. We studied the surface morphology and electrical property of an AlGaN/low-temperature-deposited (LT) AlGaN interlayer/GaN structure, dependent on the growth condition. It was found that the conductive LT-AlGaN interlayer and crack-free over-grown Al0.1Ga0.9N layer with a thickness of 1 µm were obtained with intermediate deposition temperature and SiH4 supply for the interlayer. Using the conductive LT-AlGaN interlayer technology, we demonstrated the low-voltage operation of a light-emitting diode. The conductive LT-AlGaN interlayer is promising technology for the realization of shorter wavelength emitters with high AlN molar fraction AlGaN cladding layers.