{'fraction_non_alphanumeric': 0.017326732673267328, 'fraction_numerical': 0.0049504950495049506, 'mean_word_length': 5.472, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Diffusive Plasma Dechucking Method for Wafers to Reduce Falling Dust Particles

A plasma dechucking method capable of effectively eliminating dust particles created during the plasma process was developed. Referred to as diffusive plasma dechucking (DPD), the method reduces the plasma potential and includes an argon gas purge to remove dust particles floating on top of the sheath after the main process. Experimental results indicate that DPD reduces the amount of falling dust particles after the process by approximately 50–80%. To analyze these results quantitatively, the Coulomb force and the neutral drag force exerted on the dust particles were considered. In addition, dust particle exhaust conditions were proposed with respect to dust particle size, plasma potential, and spatial electric field.