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Mid-IR waveguides in SOI platform

We present mid-IR waveguides developed in Ge-on-SOI and SOI. The minimum loss achieved for Ge-on-SOI strip waveguides is ∼8 dB/cm and for SOI waveguides is ∼1.4 dB/cm for TE polarized light at 3.7 μm. These waveguides demonstrate the feasibility of employing Ge-on-SOI for high power integrated sensing and SOI to achieve low-loss interconnects.