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CVD-grown tin sulphide for thin film solar cell devices

Chalcogenide materials are emerging as leading thin film photovoltaic (PV) technology. Tin mono-sulphide, a p-type semiconductor with a band gap of ~1.3 eV, has attracted great interest for the use as an absorber layer in chalcogenide thin film solar cells due to its desirable properties as an absorber layer in scalable, inexpensive, and non-toxic solar cells. In this work thin films of tin sulphide have been deposited by chemical vapour deposition (CVD) at room temperature onto soda-lime substrates then annealed at five different temperatures 200, 250, 350, 400 and 450°C with the aim of optimizing the properties of the thin films to achieve the required phase for use in solar cell device structures. These annealed CVD-grown tin sulphide thin films were further characterized with SEM, EDX, XRD, Raman and UV-VIS-NIR spectroscopy. The preliminary results of these tin sulphide thin films show great promise for PV applications.