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Diblock copolymer directed self-assembly for CMOS device fabrication

We present our recent work on using diblock copolymer directed self-assembly for the fabrication of silicon MOSFETs. Instead of using self-assembly to assemble the entire device, we plan to utilize self-assembly to perform one critical step of the complex MOSFET process flow in the beginning. Initial results of using PS-b-PMMA to define pores with hexagonal array having diameter of 20 nm for contact hole patterning will be described. Potential integration issues for making MOSFETs will also be addressed.