{'fraction_non_alphanumeric': 0.04118404118404118, 'fraction_numerical': 0.015444015444015444, 'mean_word_length': 3.8625, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Micro-Raman scattering study of hexagonal InGaN epitaxial layer

Hexagonal In x Ga 1-x N film grown by metalorganic chemical vapor deposition (MOCVD) was studied by Micro-Raman scattering and X-ray diffraction. The phase separation was observed in In x Ga 1-x N, the biaxial stress was measured by both Raman and X-ray diffraction. In Raman spectroscopy, the A 1 (LO) mode of In x Ga 1-x N is absent. Instead, the LO phonon-plasmon coupled mode (LPP + ) was observed at about 778 cm -1 . The carrier concentration was determined by the frequency of the coupled mode. The E 2 and A 1 (TO)modes of In x Ga 1-x N layer exhibit a down-shift compare to those of GaN layer. At low temperature, the peak induced by electronic transition was observed in Raman spectra of In x Ga 1-x N.