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A New Etching Method for Reducing the Electron Shading Damage Using ICP Etcher

A new metal etching method for reducing the electron shading damage using ICP etcher was proposed. The electron shading damage occurs by the similar mechanism to notch formation. Namely, negative charge-up of sidewall of photoresist by electrons owing to the difference between electrons and ions motion in the plasmas (1,2) . Therefore$ is expected that the etching process with no notch has low electron shading damage. It was found that notch-free overetching process using low inductive power in ICP etcher has low and uniform electron shading damage.