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Active metasurface microwave absorber with reconfigurable bandwidth and absorption intensity

In this paper, an active metasurface microwave absorber with reconfigurable bandwidth and absorption intensity is proposed. The metasurface unit adopts a metallic-backed structure, and its thickness is approximately 0.08 times the free-space wavelength. As the key feature, the structure with reconfigurable bandwidth and absorption intensity is adopting hollow Jerusalem-cross-shaped pattern-loaded PIN diodes. By virtue of the synergy of the dielectric and ohmic loss, effective and stable microwave absorption is readily achieved, and the simulation results obtained from high frequency structure simulator and advanced design system are in agreement. The reconfigurable absorption bandwidth of the metasurface covers C-band, X-band, and Ka-band, with reconfigurable absorption intensity up to 13 dB range. Then, the sample prototype is fabricated for demonstration, and the measurement result is consistent well with the simulation one. In addition, the structure also has a small reflection in a wide reflection angle space (−60°–60°), which is of great significance for radar stealth.