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Comparison of InAs quantum dots grown on GaInAsP and InP

We report on the growth of InAs quantum dots (QDs) on GaInAsP and InP buffers by metal–organic chemical vapour deposition on InP(100) substrates. Indium segregation and the As–P exchange reaction affect the QD nucleation and composition. The As–P exchange reaction has a more pronounced effect on the QDs grown on the InP buffer than on those grown on the GaInAsP buffer. A very thin (0.6 nm) GaAs interlayer grown between the buffer layer and the InAs QD layer consumes segregated indium and minimizes the As/P exchange reaction. Wavelength tuning from 1450 to 1750 nm covering the technologically important 1550 nm wavelength is also achieved for the InAs QDs grown with the thin GaAs interlayer.