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Floating Gate Memory Based on Ferritin Nanodots with High-k Gate Dielectrics

The memory characteristics of nanodot-type floating gate memory with high-k tunnel oxide were investigated by measuring the memory characteristics of metal–oxide–semiconductor (MOS) capacitors with biomineralized inorganic nanodots. Biomineralized iron bio nanodots (Fe-BNDs) accommodated in ferritin were utilized as a storage charge. High-density and monolayer Fe-BNDs were absorbed by high-k tunnel oxide. Fabricated MOS capacitors showed clear hysteresis in capacitance–voltage (C–V) characteristics. The observed hysteresis in C–V characteristics was occurred by charging and discharging to Fe-BNDs. A large memory window and good retention characteristic were obtained using high-k as tunnel oxide. This is caused by the difference in the charging mechanism to Fe-BND. This research confirmed that the combination of bio nanodot floating gate memory with high-k film is promising for next-generation memory devices.