{'fraction_non_alphanumeric': 0.02512562814070352, 'fraction_numerical': 0.0, 'mean_word_length': 4.947761194029851, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Promotion of lateral growth of GaN crystals on point seeds by extraction of substrates from melt in the Na-flux method

In a previous study, we successfully obtained large-diameter, low-dislocation-density GaN wafer using the Na-flux multi-point seed (MPS) technique. However, the lattice constants of the GaN wafer grown by this technique expanded due to oxygen concentration in pyramidal facets. We here invented a breakthrough technique for the promotion of lateral growth, and succeed in suppressing pyramidal facet growth by residual flux formed after extraction of the MPS-GaN substrate from the Na-Ga melt in a crucible. The surface of the grown wafer was fully composed of the c-plane and showed low oxygen concentration, so expansion of lattice constants could be successfully prevented.