{'fraction_non_alphanumeric': 0.03436807095343681, 'fraction_numerical': 0.02771618625277162, 'mean_word_length': 5.060402684563758, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Performance Enhancement of Top-Contact Pentacene-Based Organic Thin-Film Transistors with Bilayer WO3/Au Electrodes

We fabricated top-contact pentacene-based organic thin-film transistors (OTFTs) with bilayer WO3/Au electrodes. Compared with those of a device without a WO3 layer, the performance characteristics including field-effect mobility, threshold voltage, and On/Off ratio were highly improved in a device with a 5 nm WO3 hole injection layer inserted. The field-effect mobility was increased from 0.47 to 0.69 cm2 V-1 s-1 and the On/Off ratio was also increased from 1.8×104 to 4.1×104. From the results of evaluating the temperature dependence of ID–VD characteristics and the surface morphology of pentacene, the improved device performance was attributed to reductions in barrier height and surface roughness after inserting a suitable WO3 layer between the pentacene and gold electrodes.