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Study of Electrophysical Characteristics of pHEMT Heterostructures by the Methods of Impedance Spectroscopy

The methods of impedance spectroscopy of (Al, In, Ga)As-based pHEMT heterostructures are developed using an LCR meter in the frequency range 0.1–2000 kHz and a vector network analyzer at higher frequencies of 0.01–3 GHz. These methods determine all the main parameters of the pHEMT heterostructures, including the threshold voltage, the channel resistance, the sheet density of electrons, and their mobility at operating biases.