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An improved analytical model of IGBT in forward conduction mode

This paper presents an attempt to improve the existing analytical models for current-voltage characteristics of IGBT in forward conduction mode. The improvement was achieved by incorporating an additional exponential term to account in an adequate manner for a forward current of the p/sup +/-substratc-n-base junction in IGBT structure. The model was verified on commercial devices by comparing the results of modeling with measured values of device current and transconductance. The model yielded good agreement with experimental results in both exponential and active regions of device operation.