{'fraction_non_alphanumeric': 0.012944983818770227, 'fraction_numerical': 0.0, 'mean_word_length': 6.034090909090909, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Light-induced degradation on porous silicon.

A study of photoluminescence degradation profiles in porous silicon as a function of time, temperature, and excitation intensity is reported. It is found that the degradation of the photoluminescence follows a stretched exponential function with the stretching parameter and the relaxation-time constant independent of the measured temperatures. The intensity of the saturated photoluminescence is linearly proportional to the excitation intensity, which indicates that the number of saturated nonradiative recombination centers does not depend on the excitation intensity