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Numerical simulation study of a novel 400 V static induction phototransistor

A novel static induction phototransistor structure that incorporates p+ guard diffusions in the drain has been investigated using numerical simulation. The guard diffusions offer protection to the photosensitive gate and allow the transistor to support high blocking voltages without the need for gate bias, allowing the easy series connection of multiple devices. The work presents results on the expected breakdown voltage, switching and temperature behaviour of a typical example of the structure.