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Weakening of Hardness and Modulus of the Si Lattice by Hydrogen Implantation for Layer Transfer in Wafer Bonding Technology

We studied the effect of H implantation on the mechanical properties of Si (001). The hardness and modulus of H implanted Si samples were measured by nanoindentation technique before and after thermal annealing. A significant weakening of the hardness of the single crystalline Si lattice in the H implantationinduced damage zone following annealing was observed. The majority of extended defects, i.e. platelets and microcracks, developed during annealing were parallel to the Si surface. The relationship between the morphology of the damage zone and the drop in hardness and modulus is discussed.