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Effect of indium content on the characteristics of indium tin oxide thin films

Transparent IxT1−xO (x = 0 to 1) alloyed thin films were deposited by spray pyrolysis technique at a substrate temperature of 400 °C. The effect of incorporation of indium on structural, optical and electrical properties of tin oxide thin films were studied. Characterization of thin films was carried out using x-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive x-ray spectroscopy (EDAX), UV-Visible absorption spectroscopy. XRD results revealed that IxT1−xO thin films were polycrystalline in nature with good crystallinity. Incorporation of indium effectively modifies the surface morphology of the films. The band gap was varied from 3.7 eV to 3 eV. Maximum electrical conductivity of 44.52 × 103 Ω−1 m−1 and transmittance of 90% is obtained for I0.5T0.5O films, hence can be used as highly transparent and conducting electrodes.