{'fraction_non_alphanumeric': 0.02402745995423341, 'fraction_numerical': 0.0, 'mean_word_length': 6.056451612903226, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
MBE-grown high-efficiency GaInAsSb mid-infrared detectors operating under back illumination

This paper describes molecular beam epitaxial growth, processing and room temperature characterization of lattice-matched GaInAsSb mid-infrared detectors on GaSb substrates for room temperature operation. For the first time, we demonstrate GaInAsSb detectors operating under back-illumination, a critically important geometry for flip-chip-mounted focal plane arrays, and achieve performance equal or superior to front-illuminated detectors. Very high quantum efficiency and flat spectral response are achieved for the back-illuminated detectors due to improved carrier collection efficiency, photon recycling and reduced carrier recombination. In situ RHEED intensity oscillations and post-growth XRD are used for coarse and fine tuning of GaInAsSb lattice matching, respectively.