{'fraction_non_alphanumeric': 0.015817223198594025, 'fraction_numerical': 0.0035149384885764497, 'mean_word_length': 5.195652173913044, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Formation of shallow source/drain junctions in MOSFET structures by using Cl-based processes in reduced pressure CVD reactors

A novel process to form shallow junctions for source/drain application in CMOS structures is presented. The method consists of two steps; first an HCl-etch followed by SiCl2H2-based selective epitaxy in the same run in a reduced pressure chemical vapour deposition chamber. Optimization of etch and epitaxy processes have been investigated and the active dopant concentration in SiGe layers grown was measured directly in the device openings.