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Growth Processes in Si/Si(111) Epitaxy Observed by Scanning Tunneling Microscopy during Epitaxy.

We have studied Si ySi(111) epitaxy during the growth process at high temperatures (500–900 K) with the scanning tunneling microscope. During the growth of two-dimensional islands, we observe three different growth processes: initial sharpening of the corners of triangular Si(111) islands, nucleation in the second layer at domain boundaries of the s7 3 7d reconstruction, and growth at the island edges occurring along rows of the width of the s7 3 7d unit cell. During the coalescence of islands, we observe the development of a new f112̄g facet growing with high growth speed. A model of hindered nucleation on the faulted part of the s7 3 7d reconstruction explains the experimental results. [S0031-9007(96)01458-5]