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Picosecond Photoconductivity In 3He+ Bombarded Inp

3He+ bombardment is shown to be an effective means of achieving very short free carrier lifetimes in Fe-doped InP. Photoconductivity studies indicate free carrier mobilities (~600 cm2/Vs with carrier relaxation times of 6 psec. Preliminary correlation measurements demonstrate that carrier lifetimes less than 5 psec have been achieved in InP using 3He+ bombardment without compromising the dark resistance of the photoconductors. The upper limit to the lifetime is a consequence of using coaxial cables in the correlation circuit.