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Fabrication of Si3N4 Layers by Pulse Magnetron Sputtering Method

Amorphous silicon nitride thin layers are the most widely applied dielectric layers in modern semiconductor devices. It is caused by their excellent properties such as high chemical inertness, high thermal stability and corrosion resistance. Si3N4 also has remarkable mechanical, optical and dielectric properties. Silicon nitride thin layer can be fabricated by low-pressure chemical vapour deposition (LPCVD), plasma enhanced chemical vapour deposition (PECVD), reactive evaporation and ion beam deposition. More recently reactive sputtering techniques were proposed for Si3N4 fabrication. We have applied the pulsed reactive magnetron sputtering of a Si target in nitrogen atmosphere for preparation of Si3N 4 layers. Parameters of the deposition process were examined. Their influence on layer properties was studied and discussed