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Numerical modeling of a SiN beam resonant pressure sensor

Numerical modeling of a SiN beam resonant pressure sensor is presented. The SiN beam is electrothermally excited and sensed by a piezoresistive thin film detector. In order to predict its exact performance and to optimize the design, the commercial FEA software is used to analyze the SiN beam resonant pressure sensor. Computer simulation is carried out on temperature distribution, resonant frequency shift due to thermal stress, effect of heater/detector elements on the natural resonance frequency, design of diaphragm geometry, and sensitivity of pressure measurement. The resonant pressure sensor has been fabricated using porous silicon sacrificial layer technology and measured both in vacuum and in air. There is a satisfactory agreement between computer simulation and experimental results.