{'fraction_non_alphanumeric': 0.01849217638691323, 'fraction_numerical': 0.0, 'mean_word_length': 5.121739130434783, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Characterization and Modeling of LDMOS Power FETs for RF Power Amplifier Applications

In this review we present a measurement-based approach to the creation of a successful circuit model of a high-power RF FET. We describe some of the measurement challenges that we face in the characterization and validation of the FET model, and our approach to their solution. We also outline some of the simulation and modeling techniques that are used in the construction of the complete transistor model. The model itself is fully nonlinear, with a self-consistent dynamic electrothermal component, and includes the in-package matching and package components, which are derived from electro-magnetic simulations.