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X-Ray Topographic Study of the Defects in GaAs Epi-Layers Grown by Liquid Phase Epitaxial Method. II.

X-ray topographic study has been made of GaAs epi-layers grown on (001) oriented undoped GaAs substrates by LPE method. Most of the substrate dislocations were found to bend parallel to the interface during the growth of epi-layer and the frequency of bending increased with increasing growth rate. In addition many dislocations were found to be generated during the growth. It is proposed that under optimum growth conditions, the substrate dislocations which bend parallel to the interface may be completely removed from being propagated into the grown epi-layer. Bent and generated dislocations were found to be asymmetrically distributed and this has been attributed to the asymmetry of [110] and [11̄0] directions in GaAs.