{'fraction_non_alphanumeric': 0.02454642475987193, 'fraction_numerical': 0.025613660618996798, 'mean_word_length': 5.171052631578948, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Effect of Deposition Power on the Structure Properties of Microcrystalline Silicon Thin Films

Microcrystalline silicon thin films prepared by plasma enhanced chemical vapor deposition (PECVD). Effects of deposition power on the microstructure properties of the thin films were investigated by Raman spectrometry, Fourier transform infrared absorption spectroscopy (FTIR) and atomic force microscopy (AFM). With increasing deposition power from 100 W to 900 W, the growth rate increased from 0.75Å/s to 2.96Å/s. The Raman spectrometry measurements showed that the peak of all films is nearby at 514 nm. The FTIR spectroscopic analysis exhibit that with power increasing the intensities of both the (Si-H) n stretching mode component at 2100cm-1 and wagging mode component at 620cm-1 increase. The surface morphology of the films using the AFM showed the surface roughness and voids of the films increase with deposition power increasing.