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Low activation energy for the crystallization of amorphous silicon nanoparticles.

We have experimentally determined the crystallization rate of plasma-produced amorphous silicon powder undergoing in-flight thermal annealing, and have found a significant reduction in the activation energy for crystallization compared to amorphous silicon thin films. This finding allows us to shed light onto the mechanism leading to the formation of high quality nanocrystals in non-thermal plasmas.