{'fraction_non_alphanumeric': 0.025179856115107913, 'fraction_numerical': 0.02997601918465228, 'mean_word_length': 4.758620689655173, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Investigation of CHF3 treatment on the energy band at the MoS2/HfZrO4 heterostructure

The energy band engineering at the multilayer MoS2 (5 nm)/HfZrO4 (15 nm) heterojunction and the effects of CHF3 plasma treatment on the band offset were investigated using x-ray photoelectron spectroscopy. For the MoS2/HfZrO4 sample without CHF3 plasma treatment, the valence band offset is about 1.00 eV and 3.20 eV for the conduction band offset. With CHF3 plasma treatment, the conduction band offset was reduced by 0.37 eV. The band alignment difference is believed to be dominated by the up-shift of the Hf 4f core level, which is consistent with the calculation result that F ions have a strong interaction with Hf atoms. This interesting finding encourages the application of HfZrO4 as gate oxide materials in MoS2-based electronic devices.