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Solution-processed flexible MAPbI3 photodetectors with ZnO Schottky contacts.

With higher detectivity, lower response time, and good mechanical flexibility, perovskite photodetectors are supposed to be a promising alternative as the next generation of photodetectors. In this work, we fabricate a low temperature-processed flexible photodetector with ITO-ZnO Schottky contact via ALD technique which has a lower dark current decreasing from 2.04×10-8 A/cm2 to 1.70×10-9 A/cm2 under -0.5 V bias voltage actuation. With 530 nm laser irradiation, the flexible device exhibits excellent performance in detectivity of 6.19×1012 Jones and LDR of 103dB. It also exhibits superior bending stability after 5000 bending circles.