{'fraction_non_alphanumeric': 0.026706231454005934, 'fraction_numerical': 0.019287833827893175, 'mean_word_length': 4.6722689075630255, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
The Effect of Magnetic Atom Substitution on the Tunneling Conductance in Skutterudite CoSb3 Semiconductors

Electron tunneling experiments were performed on n-Co 0.9 Ni 0.1 Sb 3 -Al oxide-Al junctions measured at 4.2 K. A V-shape tunneling conductance curve with small zero bias offset is observed, which can be associated with disorder states. Comparing with the results on p-Co 0.9 Fe 0.1 Sb 3 samples, it has been clarified that the Fe substitution leads to a stronger three-dimensional disorder state as compared to the case of Ni substitution. Magnetic susceptibility measurements suggest that the observed three-dimensional disorder state is mainly magnetic in nature.