{'fraction_non_alphanumeric': 0.018162393162393164, 'fraction_numerical': 0.002136752136752137, 'mean_word_length': 5.04516129032258, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Photoexcitaion effect on transport properties of CeZnSbO

We have investigated a tunability of transport properties of CeZnSbO by optical light with the photon energy larger than the optical band gap. While CeZnSbO is reported to be a nearly degenerate semiconductor, in the present work, a sample of a non-degenerate type can be prepared. The electrical resistivity has been found to be highly sensitive to sample quality. The examinations of photoexcitation effect have revealed that the results depend on the type of semiconductor: degenerate and non-degenerate types. For a degenerate semiconductor, freezing of carriers at low temperatures can be resolved by increasing the fluence rate. On the other hand, in a non-degenerate type, the activation energy at high temperatures is almost independent of fluence rate. We have additionally found a possible opto-mechanical effect in a composite of CeZnSbO and a small amount of Zn4Sb3.