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Theoretical study of rectifying properties in a terahertz regime with a zero-bias voltage for fully epitaxial Fe/ZnO/MgO/Fe magnetic tunnel junctions

We conducted a theoretical study of high-frequency rectifying properties with a zero-bias voltage in epitaxial Fe(001)/ZnO(001)/MgO(001)/Fe(001) magnetic tunnel junctions (MTJs) in conjunction with the expectation of the element being applied as a square-low detector. By optimizing device parameters such as insulator thickness and the junction area, we obtained current responsivity of up to 0.12 A W−1 at 1 THz (with a cut-off frequency of 1.5 THz), which is comparable to the best results obtained in experiments for semiconductor-based diodes, performed under similar conditions. The results indicate that this MTJ system has great potential for use as a high-frequency rectifying element in a terahertz regime.