{'fraction_non_alphanumeric': 0.021560574948665298, 'fraction_numerical': 0.01026694045174538, 'mean_word_length': 5.170886075949367, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
On the Characterization of Embedded Memories of Zynq-7000 All Programmable SoC under Single Event Upsets Induced by Heavy Ions and Protons

The reliability of modern devices like All Programmable SoC (APSoC) devices to Soft Errors has decreasing with the constant technology scaling due to the reduction of transistor size and reduced voltage supply. This work presents static tests performed with heavy ions and protons irradiations in the Xilinx Zynq-7000 APSoC to measure the sensitivity of its FPGA and embedded memories under Soft Errors. In addition, experiments also consider variations in the nominal supply voltage and temperature according to the device's datasheet ranges. Results show that, for the same memory type, there are not significant differences in cross-section when the supply voltage is changed, or the device is heated. However, when different memories are compared, like On-Chip SRAM versus Block RAM, the difference in cross-section can reach 46%.