{'fraction_non_alphanumeric': 0.029978586723768737, 'fraction_numerical': 0.008565310492505354, 'mean_word_length': 5.824817518248175, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
The fabrication of carbon nanotube field-effect transistors with semiconductors as the source and drain contact materials

Sb2Te3 and Bi2Te2Se semiconductor materials were used as the source and drain contact materials in the fabrication of carbon nanotube field-effect transistors (CNTFETs). Ultra-purified single-walled carbon nanotubes (SWCNTs) were ultrasonically dispersed in N-methyl pyrrolidone solvent. Dielectrophoresis was used to deposit and align SWCNTs for fabrication of CNTFETs. The Sb2Te3- and Bi2Te2Se-based CNTFETs demonstrate p-type metal–oxide–silicon-like I–V curves with high on/off drain–source current ratio at large drain–source voltages and good saturation of drain–source current with increasing drain–source voltage. The fabrication process developed is novel and has general meaning, and could be used for the fabrication of SWCNT-based integrated devices and systems with semiconductor contact materials.