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Modelling of the CMOS buried double‐junction photodetector

In this paper, a general model of the buried double‐junction (BDJ) photodetector is proposed for DC, AC, and noise analysis. In conjunction with the analytical expressions of photo‐generated and dark currents, this model can be applied to all BDJ operating modes. Moreover, it can be easily extended to any multilayer PN junction device. The experimental results obtained for various devices realized using the 0.35‐μm CMOS technology show good agreement with the simulation and allow the determination of key model parameters. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 45: 507–514, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20865