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Multi Parameter Admittance Spectroscopy of MOSFETs with 2D MoS2 Channels

We use Multi Parameter Admittance Spectroscopy (MPAS) for characterizing trapped charge in molybdenum disulphide (MoS2) based field-effect transistors (FETs). The method relies on frequency and voltage dependent admittance measurements and aims at characterization of energy positions and carrier emission rate of the traps. This characterization gives information about trap distributions in the MoS2 and the influence of traps in the gate oxide bulk.