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Detectors with reconfigurable read-out electronics in a 0.18 μm CMOS bulk technology

The suitability of standard CMOS technology - featuring no epitaxial layer - for the fabrication of particle detection sensor has been already demonstrated [1,2]. Different sensitive element layouts and read-out schemes have been devised and implemented, depending on the potential applications [3,4]. Manufacturing process peculiarities, however, may significantly affect their behaviour, and the correlation between detector performance and geometrical features/circuit topology is not necessarily straightforward. In this work we present the design and preliminary characterization of an array of APS-like CMOS sensors conceived for direct soft X-rays detection applications, as well as for MIP ionizing particles detection. Circuits include a 64 k pixel array of detectors with reconfigurable read-out electronics capable of both continuous and externally-triggered behaviour. To evaluate technology-related aspects, some smaller (1 k) arrays were included exploiting different geometrical features. A few test structures were also included, aimed at comparing performance both at the pixel and the transistor level.