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Contribution of Electron Hopping on Colossal Dielectric Response of Bi-Substituted LaMnO3 Ceramics

The dielectric properties and conductivity of semiconducting Bi-substituted LaMnO 3 ceramics were investigated. It was found that the electron hopping between Mn 3 + and Mn 4 + contributed to the colossal dielectric response of Bi-substituted LaMnO 3 ceramics. A dielectric relaxation with the same activation energy of conductivity was observed in the temperature range from 120 K to 240 K. Due to the effects of the lone-pair electron of Bi 3 + , the activation energy of the dielectric relaxation in La 1 − x BixMnO 3 ceramics increased with increasing amount of Bi3 +.