{'fraction_non_alphanumeric': 0.024793388429752067, 'fraction_numerical': 0.004132231404958678, 'mean_word_length': 5.09433962264151, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
MODELLING OF P-I-N PHOTODIODES UNDER HIGH ILLUMINATION CONDITIONS

The response of a p-i-n photodetector made from gallium arsenide to both steady-state and transient illumination has been modelled. Both an ensemble Monte-Carlo model and a drift-diffusion model were used, the latter with the choice of two different mobility models. The effects of high intensity steady-state illumination on the field and carrier distributions in the photodetector were calculated, and a comparative study of the models made. The transient response to pulsed illumination has also been calculated and the different results obtained from the models explained. The effect of high illumination on the response speed of the detector has been demonstrated. In addition, an expression for obtaining the photocurrent from the Monte-Carlo simulation, with much reduced statistical noise over the conventional estimate, has been derived and successfully tested. © 1997 John Wiley & Sons, Ltd.