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Study of silicon-silicon nitride interface properties on flat and textured surfaces by deep level transient spectroscopy

Silicon nitride (SiNx) films deposited by direct plasma-enhanced chemical vapor deposition (PECVD) are widely used in silicon solar cell fabrication as passivation layers, yielding very low surface recombination velocities on crystalline Si (c-Si) material. So far, there have been some reports on deep-level transient spectroscopy (DLTS) of as-deposited SiNx layers on Si, but the impact of rapid thermal anneal (RTA) processing step and the textured surface has not been investigated yet. In this paper, low frequency direct PECVD Si-SiNx interface properties with and without plasma NH3 pre-treatment, with and without RTA on both flat (100) and (111) orientations and textured n-type silicon samples have been investigated with DLTS.