{'fraction_non_alphanumeric': 0.012658227848101266, 'fraction_numerical': 0.0, 'mean_word_length': 5.1688311688311686, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Crystal quality improvement of Gallium Nitride on plane Sapphire by predose method

A method that greatly improves the crystal quality of Gallium Nitride grown on plane Sapphire substrate by Metal-organic Chemical Vapor Deposition (MOCVD) was proposed. High level quality of GaN film was obtained on plane Sapphire substrate using this method by adding predose GaN layers before the growth of buffer layer, which is almost comparable to that grown on PSS sapphire substrate.