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Transmission electron microscope observations of extended and unextended dislocation nodes in Si and Ge/Si layers using the weak‐beam technique

The transmission electron microscope (TEM) weak‐beam method was employed in a study of dislocation nodes both in deformed single crystal Si and at the Ge/(lll)Si interface. All intrinsic nodes were observed to be extended, and measurements of their geometry in Si were used to determine the intrinsic stacking‐fault energy. However, only approximately half of the extrinsic nodes were extended and this was interpreted in terms of an energy barrier to node extension.