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Bi-SQUIDs with submicron cross-type Josephson tunnel junctions

We present and discuss results for the experimental evaluation of bi-SQUIDs with shunted submicron cross-type Josephson tunnel junctions characterized by low capacitance. Such a technology, meant for SQUID sensors, was developed to enable unshielded operation of the sensors and to avoid unwanted flux trapping. The obtained voltage response swing is as high as 60 µV. The observed differences between the measured and theoretically predicted voltage responses are analyzed and the possible ways to approach a triangular voltage response shape are discussed. An improved design of such bi-SQUIDs with gradiometric topology is suggested to compensate for the influence of the sizable parasitic three-junction loop, which is the main drawback of the implemented bi-SQUID topology.