{'fraction_non_alphanumeric': 0.03170731707317073, 'fraction_numerical': 0.01951219512195122, 'mean_word_length': 4.48, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Planar bulk InP avalanche photodiode design for 2.5 and 10 Gb/s applications

We present a versatile design for a planar bulk-InP avalanche photodiode suitable for 2.5 Gb/s and 10 Gb/s applications. Device processing similar to that of p-i-n diodes results in sub-nA dark current, high bandwidth, and high reliability with edge breakdown controlled by shaping of the diffusion profile and floating guard rings.