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p-Type Electrical Conduction in ZnO Thin Films by Ga and N Codoping

We report the realization of p-type behavior in ZnO thin films, which are prepared by codoping method using Ga (donor) and N (acceptor) as the dopants. Especially, using active N formed by passing N2O gas through an electron cyclotron resonance (ECR) plasma source is quite effective for the acceptor doping. We have observed a room temperature resistivity of 2 Ω·cm and a hole concentration of 4×1019 cm-3. These values are enough high for practical applications in various oxide electronic devices.