{'fraction_non_alphanumeric': 0.03595080416272469, 'fraction_numerical': 0.05487228003784295, 'mean_word_length': 5.223529411764706, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
PTCR Effect of Chip Type Ba1.005-xSmxTiO3 Ceramics Prepared by Reduction Sintering-Reoxidation Method

The effects of sintering temperature and reoxidation conduction on the positive temperature coefficient of resistivity (PTCR) effect of chip type Ba1.005-xSmxTiO3 (BSMT) ceramics were investigated. The samples were reoxidized at 600°-800°C for 0-3 h in air after being sintered at 1200°-1280°C for 30 min in a reducing atmosphere. The results indicated that the reduced BSMT ceramics reoxidized at 800°C exhibited a pronounced resistivity jump. Moreover, the room temperature resistivity and resistivity jump of samples decreased with increasing sintering temperature of 1200°-1280°C. Furthermore, BSMT ceramics with 0.6 mol% Sm3+ reoxidized at 750°C for 3 h after sintering at 1200°C for 30 min exhibited a significant resistivity jump of 3.2 orders of magnitude, along with a relatively low room temperature resistivity of 661.4 Ω.cm. In addition, the activation energy of the samples obtained at different sintering temperatures was also investigated.