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High-speed directly modulated 1.5μm quantum dot lasers

Due to the discrete density of states distribution and spatial localization of carriers in quantum dot (QD) material, the dynamics should be strongly enhanced in comparison to quantum well material. Based on improved 1.5 μm InAs/InGaAlAs/InP QD gain material short cavity ridge waveguide lasers were fabricated. Devices with cavity, lengths of 230 to 338 μm with high reflection coatings on the backside exhibit record value for any QD laser in small and large signal modulation performance with up to 15 GHz and 36 GBit/s, respectively, obtained at 14 °C. Due to the high temperature stability of threshold current and external differential efficiency, the lasers exhibit also nearly constant modulation bandwidth between 14-60 °C.