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Zero-bias optically controlled RF switch in 0.13µm CMOS technology

For the first time, we demonstrate an optically controlled passive RF switch realized in a common Si CMOS technology. Simulation results have been shown and a fabricated 230 µm × 240 µm chip has been measured. The newly developed switch is capable of working up to several GHz. Experimental results at 2 GHz show more than 20dB change in insertion loss between light and dark illumination states (varying from −30dB to −6.8dB). Application of a slight external DC bias reduces the ON state insertion loss to only 1.8 dB. Such bias could be easily produced in a future iteration by adding another photodiode to the circuit. This work opens a new frontier by combining commonly available IC technologies with optical control and high frequency devices.