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High Frequency Drain Noise in InAlAs/InGaAs/InP High Electron Mobility Transistors in Impact Ionization Regime

An experimental characterization and analysis of drain (channel) noise in InP-based HEMTs in impact ionization regime has been performed in the frequency range of 2 to 20 GHz. The experimental data can be fit well by using two time constants (τ1=1 ns and τ2=0.01ns). The τ1=1 ns is close to the reported hole recombination characteristic time suggesting the importance of hole recombination process on the microwave noise in InP HEMTs. The results further extend the understanding on high frequency noise originating from the impact ionization and I-V kink mechanism.