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Study on temperature characteristic of green photodetector on Si substrate

In the paper, a silicon PN junction photodetector is developed on the basis of n-type single-crystal (100) silicon substrate. The properties of this semiconductor photodetctor depend on the temperature to certain extent. We emphasize on the study on temperature characteristic of the photodetector: Firstly, the temperature behavior of dark current at zero bias voltage and wide temperature range was investigated. Results show that dark current increases exponentially with temperature over room temperature. Secondly, the temperature behavior of photo current at zero bias voltage and wide temperature range was studied. The temperature characteristic is analysesed in the theory and optimized.