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Current Injection Laser Oscillation in TlInGaAs/GaAs Double Quantum Well Diodes with InGaP Cladding Layers

TlInGaAsN/AlGaAs heterostructures were proposed for use in the fabrication of temperature-stable lasing wavelength and threshold current laser diodes. As a first step, we grew TlInGaAs/GaAs quantum well (QW) structures on GaAs(100) substrates and demonstrated an electroluminescence (EL) emission of up to 300 K. Compared with InGaAs/GaAs QWs, we confirmed that the temperature variation of the EL peak energy was decreased by the addition of Tl into InGaAs. We also demonstrated the pulsed current injection laser oscillation in the TlInGaAs/GaAs double QW laser diodes with InGaP cladding layers up to 176 K.