{'fraction_non_alphanumeric': 0.04206008583690987, 'fraction_numerical': 0.02575107296137339, 'mean_word_length': 4.97948717948718, 'pattern_counts': {'":': 0, '<': 1, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Recent developments in CdZnTe gamma-ray detector technology

A discussion of recent results in the preparation of Cd1-xZnxTe crystals by a high pressure Bridgman (HPB) method and use of the crystals for gamma- and x-ray detectors is presented. Resistivities in excess of 1011 ohm-cm are achieved in Cd1-xZnxTe without impurity doping. The consequential low detector leakage currents lead to excellent energy resolution, 8.4% (FWHM) at 30 keV, for example. Useful energy spectroscopy can be performed at temperatures up to 100 degree(s)C. The dependence of leakage current on temperature from -40 degree(s)C to 100 degree(s)C implies a Fermi level at mid-gap for x equals 0.2. HPB grown Cd1-xZnxTe crystals exhibit relatively low defect content, as evidenced by etch-pit-densities <EQ 104 cm-2, double-crystal-rocking-curve linewidths of 10 - 15 arc-seconds and sharp, bright emission lines, with excitonic features, in low temperature photoluminescence measurements. Results of flash x ray experiments indicate high current sensitivity, low leakage current, and good temporal response. Preliminary results of Cd1-xZnxTe imaging detector array studies are discussed.