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Investigation on photoluminescence properties of CeO2/Sm2O3 multilayer films based on Si substrates

CeO2/Sm2O3 multilayer films were deposited on p‐type Si wafers by e‐beam evaporation technology. Four typical photoluminescence peaks of Sm3+ ions located around 572, 615, 656, and 719 nm were observed after the samples were annealed in an oxidizing atmosphere at high temperature. The luminescence properties of CeO2:Sm3+ films were characterized by excitation, emission spectra, and decay curves. In addition, a study of the effects of Sm2O3 thickness and annealing time on the samples' photoluminescence was conducted.