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Field-effect modulation of charge-density-wave transport in NbSe3 and TaS3.

We have constructed MOSFET-like structures using the quasi-one-dimensional conductors NbSe3 and TaS3. At temperatures below the Peierls transition, an applied gate voltage modulates the threshold field for sliding motion of charge-density waves by up to 40%. The resulting modulation of the collective conductance can be more than 2 orders of magnitude larger than that of the single-particle conductance. We consider several possible mechanisms for this conductance modulation, and suggest electric-fieldinduced variations of the charge-density-wave order parameter as the most plausible mechanism.