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GROWTH TEMPERATURE DEPENDENCE OF Ga2O3 THIN FILMS DEPOSITED BY PLASMA ENHANCED ATOMIC LAYER DEPOSITION

ABSTRACT In this report, plasma-enhanced atomic layer deposition (PEALD) technique was used to deposit dielectric Ga2O3 thin films at various temperatures (50, 150, and 250°C) on p-type Si (100) and quartz substrates with an alternating supply of reactant source, [(CH3)2GaNH2]3, and oxygen plasma of 150 W. The growth temperature dependences of the Ga2O3 thin films were investigated. An atomic force microscope and an X-ray diffractometer were used to investigate the surface morphologies and the structural properties of the thin films. The electrical properties of Pt/Ga2O3/Si structured thin film were investigated by using a semiconductor parameter analyzer. A spectrophotometer was used to measure the transmittances of the thin films, and the band gap energies of the thin films were calculated.