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Effect of the Substrate Heating Due to the Sputtering Process on the Crystallinity of TiO2 Thin Films

This article reports on the effect of the increase of substrate temperature due to the plasma discharge on the crystalline structure of the TiO2 thin films deposited on silicon by the magnetron sputtering technique. The influence on the film crystallinity was evaluated as a function of process parameters, such as, substrate-to-target distance and reactive gas concentration. The substrate holder was equipped with two thermocouples in order to measure simultaneously the substrate temperature Ts and the substrate surface temperature Tsurf during the deposition. The films were analyzed by X-ray diffractometry (XRD) and profilometry. Results show that the critical temperature to obtain crystalline films depends upon the gas composition and it varies from 170oC 210oC for oxygen concentration in the gas mixture varying from 20 to 100%.