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Reveal the large open-circuit voltage deficit of all-inorganic CsPbIBr2 perovskite solar cells

Due to excellent thermal stability and optoelectronic properties, all-inorganic perovskite is one of the promising candidates to solve the thermal decomposition problem of conventional organic-inorganic hybrid perovskite solar cells (PSCs), but the larger voltage loss (V loss) cannot be ignored, especially CsPbIBr2, which limits the improvement of efficiency. To reduce V loss, one promising solution is the modification of the energy level alignment between the perovskite layer and adjacent charge transport layer (CTL), which can facilitate charge extraction and reduce carrier recombination rate at the perovskite/CTL interface. Therefore, the key issues of minimum V loss and high efficiency of CsPbIBr2-based PSCs were studied in terms of the perovskite layer thickness, the effects of band offset of the CTL/perovskite layer, the doping concentration of the CTL, and the electrode work function in this study based on device simulations. The open-circuit voltage (V oc) is increased from 1.37 V to 1.52 V by replacing SnO2 with ZnO as the electron transport layer (ETL) due to more matching conduction band with the CsPbIBr2 layer.