{'fraction_non_alphanumeric': 0.0189520624303233, 'fraction_numerical': 0.006688963210702341, 'mean_word_length': 4.907894736842105, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Rapid thermal processing of zinc diffusion in indium phosphide

A stripe heater has been used to diffuse zinc into semi-insulating and n-type (001) InP from a thin spun-on zinc silica film. The diffusion profiles were investigated by means of secondary ion mass spectroscopy and capacitance-voltage measurements. Diffusion depth and activation energy of an effective diffusion coefficient are compared with those published for Zn ampoule diffusion. For the diffusion of Zn in semi-insulating InP an activation energy of 1.35 eV was found. An expression for the effective diffusion coefficient for Zn in InP is derived and compared with results of a Boltzmann-Matano analysis of diffusion profiles. As a result the zinc diffusion can be described by the interstitial-substitutional model, where Zn diffuses as a singly positive charged interstitial and acts as an acceptor by filling an In vacancy.