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Growth of Wafer Scale ReS2 with "Tunable" Geometry towards Electron Field Emission Application.

Despite high potential, the promise of 2D materials has not been realized practically due to limits of tiny grown size and difficult manipulation of active spot. The utilization of 2D layers is the ultimate approach, which should be supported by large-scale production. In this very first report, we demonstrate the wafer-scale production of ReS2 using conventional sputtering method. The controllability of ReS2 geometry has been investigated to form typical thin films or vertically aligned layers which are further applied for field emission. The vertically aligned ReS2 layers exhibit ultralow turn-on electric field of 0.6 V μm-1 with the current density of 0.6 mA cm-2 and significantly low threshold electric field of 0.8 V μm-1, respectively, along with outstanding emission stability. The results are attributed to extremely weak interlayer coupling of ReS2 layers and high geometrical field enhancement factor (~1.08×105). Further, Kelvin probe force microscopy measurements confirm that lowering the workfunction is not solely responsible to achieve ultralow operative field. Moreover, finite element simulation suggests that not only the length, width, and separation of the nanostructures but also the local slope plays an important role to suppress screening effects.