{'fraction_non_alphanumeric': 0.02833530106257379, 'fraction_numerical': 0.0, 'mean_word_length': 6.373913043478261, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
III-Nitride integrated photonics platform for the ultraviolet and visible spectral range

III-nitride semiconductors have drawn considerable attentions for its wide success in photonic devices including light-emitting diodes (LEDs), laser diodes, solar cells, and photodetectors. In addition to discrete devices, recent studies on III-nitride waveguides have now opened up new opportunities in integrated photonics circuits for biochemical sensing, beam steering, nonlinear optics, and quantum photonics applications in the ultraviolet and visible spectral region. For example, due to their wide bandgap, low material dispersion, and active integration capability, III-nitride materials are particularly attractive for integrated nonlinear optics applications, including second harmonic generation, comb generation, and parametric down conversion.