{'fraction_non_alphanumeric': 0.03543307086614173, 'fraction_numerical': 0.001968503937007874, 'mean_word_length': 5.059523809523809, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Electron Injection Mechanism in Top-gate Amorphous Silicon Thin-film Transistors with Self-Aligned Silicide Source and Drain

We have successfully demonstrated top-gate a-Si TFT with self-aligned nickel silicide source/drsain (S/D). We have shown, by examining contact resistance, the dominant electron injection mechanism is tunneling from silicide S/D to the channel. Further, we show that the contact resistance has no influence on device threshold and little effect on effective mobility down to L=5 mum.