{'fraction_non_alphanumeric': 0.01020408163265306, 'fraction_numerical': 0.006122448979591836, 'mean_word_length': 5.546666666666667, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Comparative study of buried insulator materials in LDMOSFETs

In this paper we study the influence of buried insulating materials including SiO2, Si3N4, and AlN in the breakdown voltage. An inversion layer forms under insulating layer that prevent from the electric field spreading into the substrate and therefore the breakdown voltage of device decreases. The inversion layer is stronger at materials with high dielectric constants and hence the breakdown voltage significantly decreases.