{'fraction_non_alphanumeric': 0.020465116279069766, 'fraction_numerical': 0.0, 'mean_word_length': 5.5212121212121215, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Characterization of thin films and stack in MOEMS structure with ellipsometry and reflectometry techniques

Nondestructive characterization on thin films and their stack in MOEMS device is highly desirable. But, it is often a challenging task because the area is usually small. During processing of thin films, the deposition rates, optical properties, and mechanical properties must be fully understood to fabricate a device with desired performance. With the patterned surface, deposition rate of a typical physical vapor deposition (PVD) technique, such as electron-beam evaporation and sputtering, varies at different location due to shadow effect. In this study, spectroscopic ellipsometry and reflectometry were used to characterize the optical properties of electron-evaporation thin films on a flat substrate. On the other hand, microreflectometer was used to monitor the spectrum of deposited multi-stack of optical thin films inside via-holes. Combination of these two techniques provides a practical way to qualify the processing and ensure the device performance.