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Terahertz time-domain spectroscopy of NiOx thin films

We have measured the terahertz transmittance of NiOx thin films grown on Si by thermal evaporation. The frequency-dependent conductivities were determined without resorting to a Kramers-Kronig analysis. Large changes in these spectral functions occurred due to varying deposition rate and annealing temperature. We observed a direct correlation between these parameters with the electronic and optical properties of NiOx thin films.