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Si Etching Employing Steady-State Magnetron Plasma with Magnet at Anode Centered in a Cylindrical Reactor

Magnetron plasma without localization of electrons has been studied by coupling electric fields on a cylindrical cathode with magnetic fields from a steady-state magnet in a centered anode. Since the area of the cathode is wider than that of the anode, the present plasma is likely to be generated by fields by self-bias voltage and plasma potential. Various distributions of Si etch rate, electron density, current of double probe and fluorine (7037 Å) emission intensity were measured by setting a quartz plate on a part of the metal cathode or covering half of the cathode circumference with a polyimide film. These results revealed that plasma density changed considerably in the vicinity of the boundary of different cathode materials and ranged in forward side of electron drift direction. Accordingly, selection of cathode materials with similar emissivity of secondary electrons to a wafer is important in the steady-state magnetron etching.