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Responsivity model for a silicon photodiode in the extreme ultraviolet

A silicon photodiode detector, type AXUV-100G, was modeled by calculating the electromagnetic field strength in each region of the photodiode. The reflectance and transmittance at each boundary and the absorption of energy in each region of the device were calculated. By using an empirical carrier collection efficiency in each region, the calculated responsivity was in agreement with the experimental responsivity in the 1 nm to 25 nm wavelength range. In the 2.7 nm to 80 nm wavelength range, the model was used to simulate the experimentally observed decrease in responsivity of a photodiode that had undergone radiation damage.