{'fraction_non_alphanumeric': 0.04081632653061224, 'fraction_numerical': 0.034013605442176874, 'mean_word_length': 3.9495798319327733, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
A novel light-emitting structure for the 3- to 5-μm spectral range

We present a novel hybrid light emitting device design based on a standard InAlGaAs/GaAs high-power laser diode array chip as a pump source and a narrow-gap PbSe-layer as active optical material. Maximum cw output powers of more than 1.1 mW and slope efficiencies of 0.4 mW/A are obtained at 25 °C. The external power efficiency amounts to 3.5×10-2 %. The emission wavelength is 4.2 μm, with a half width of 770 nm (50 meV). Details about the optimization of the emitter material and device design are discussed as well.