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Radio-Frequency Power Amplifier Based on CVD Graphene Field-Effect Transistor

In this work, we investigate the performance of radio-frequency (RF) power amplifier based on chemical vapor deposition (CVD) graphene field-effect transistors (GFETs). The GFETs with gate length of 300 nm were fabricated on SiO2/Si substrate, which show an extrinsic current gain cut-off frequency (fT) of 18.6 GHz and an extrinsic maximum oscillation frequency (fmax) of 19.8 GHz. The parameters of compact large-signal model for the GFETs were extracted from the measured direct current (DC) and RF characteristics of GFETs, followed by implementation of the compact model using Verilog-A for circuit simulation. Using electronic design automation (EDA) tools, we designed a GFET-based power amplifier. The power amplifier working at 2.5 GHz shows a gain of ∼7 dB, an output power of ∼0 dBm (1 mW), a power added efficiency (PAE) of 2.8% and third order intermodulation distortion (IMD) of ∼20 dBc, at the 1 dB compression point.