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Transport Coefficient of Multi-Layer Film of Semiconductors

With the use of total reflection of phonons at the boundaries of multi-layer film, it is possible to control the two quantities of thermal conductivity and electric conductivity of semiconductor independently. This film has the possibility to be a very good thermoelectric substance owing to its small thermal conductivity and ordinary magnitude of electric conductivity. In this paper it is discussed as to what extent the thermal conductivity of multi-layer film can be reduced in terms of κF, κP and λint, where κF and κP are the thermal conductivities of total-reflected phonons and partial-reflected ones respectively, and λint is the mean free path due to cross relaxation between two groups of phonons. Theoretically it is expected that the figure of merit Z=α2(σ/κ) increases by the order of a few decades. This is possible by the technical accomplishment of making a clean multi-layer film.