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Photodetectors for fast images recognition on structures with Shottky barriers

The paper proposes semiconducting photodetectors for fast images recognition. Photodetector is illuminated simultaneously with two beams of "intrinsic" light. One of the beams carries image of the reference object the other provides image of the current object. While the images are identical the photoresponse turns to be maximum. Photodetector represents itself a processor which multiplies the the corresponding elements of these images and integrates the result over the square. Photodetector is a plane-parallel plate of crystal with high resistance (GaAs, CdTe) with a photosensitive n - p junction at one side and Shottky barrier (optical detecting medium) at the other one.