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Improvement of Optical Properties of Multilayer Quantum Dots Self-Formed in GaP/InP Short-Period Superlattices on GaAs(311)A

Multilayer quantum dots (MQDs) structures are fabricated on a GaAs(311)A substrate by sandwiching the quantum dots (QDs) self-formed in (GaP)1.5(InP)1.88 short-period superlattices (SLs) with InGaP/InAlP SL layers instead of InGaP layers, as barrier and cladding layers. Narrower photoluminescence (PL) and electroluminescence (EL) linewidths and weaker temperature variations are observed for the modified MQDs compared with the previously reported best values for MQDs with InGaP barrier and cladding layers. PL and EL peak energies for the modified MQDs are higher than those for the previous MQDs. These results suggest the enhancement of carrier confinement by the use of InGaP/InAlP SL layers as barrier and cladding layers. The temperature dependence of EL intensity is also improved.