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Experimental Study of the Effect of High DC Bias Currents on the Measurement Performance of Impedance and Current Probes

Power electronic devices with fast switching semiconductors require the knowledge of the RF behavior of the implemented system components. Current and impedance probes can be used to examine the RF properties of those devices insitu and without galvanic contact. However, in systems under operation DC or low frequency currents will lead to saturation effects in the impedance probes’ core resulting in a degradation of the coupling between the probe and the system under test. In this paper the influence of high DC bias currents on such probes is examined experimentally and the resulting measurement errors are estimated. The conclusion is that DC bias will lead to relevant errors which have to be taken into account when doing EMC measurements.