{'fraction_non_alphanumeric': 0.014553014553014554, 'fraction_numerical': 0.002079002079002079, 'mean_word_length': 5.025, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Modeling of OxRAM variability from low to high resistance state using a stochastic trap assisted tunneling-based resistor network

In this work, a model is proposed to explain the variability of OxRAM devices, both in their high and low resistive states. This model is based on the calculation of a 3D resistance network, using trap assisted tunneling current. The stochastic nature of the resistance is captured by random placement of traps within a specific spatial distribution.