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High-performance InP-based resonant-cavity-enhanced photodetector based on InP/air-gap Bragg reflectors

In this paper, we demonstrate the design, fabrication and characterization of a long wavelength InP-based resonant cavity photodetector with InP/air-gap Bragg reflectors by using selective wet etching. The bottom mirror of the RCE photodetector is the InP/air-gap Bragg reflector; the top mirror is formed by the interface of semiconductor/air. The In0.53Ga0.47As absorption layer thickness is 300nm. A peak quantum efficiency of 60% at 1510nm and a 3-dB bandwidth of 16GHz are achieved with the active area of 50×50μm2. The dark current as low as 2nA was achieved at reverse bias of 3.0V.