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Metamaterial perfect absorber based on heavily doped semiconductor for thermal emission

The development of efficient thermal emitters with controlled spectra is of interest because of the potential applications in infrared sensing, thermal imaging, and thermophotovoltaics. In this work, we develop an efficient room temperature thermal emitter exclusively based on semiconductor materials. The structure consists of multilayered structures of heavily-doped and un-doped semiconductor. Semiconductor plasmonic resonators compose the top layer of the structure. By careful design of the metamaterial perfect absorber, it is possible to reach an emittance equal to unity.