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Fabrication and Visible-Light-Emission Characteristics of Room-Temperature-Operated InGaPAs DH Diode Lasers Grown on GaAs Substrates

The fabrication of InGaPAs DH diode lasers, about 704 and 725 nm in wave length at 300 K, on GaAs substrates is described. Active layers of DH wafers tend to be rough with increasing the concentration of As in them. The threshold of pulse-current density for the diodes is typically 1.5×105 A/cm2. Differential quantum efficiency per one facet of these diodes varies from 1 to 3.4%. A power density as high as 2×106 W/cm2 is achieved at a mirror facet, on which no mirror damage is caused.