{'fraction_non_alphanumeric': 0.02578268876611418, 'fraction_numerical': 0.003683241252302026, 'mean_word_length': 5.9743589743589745, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
P‐67: Investigation on the Hydrogen‐Assisted Al Induced Metal Crystallization Poly‐Si

The hydrogen plasma‐assistant Al induced crystallization (HAIC) technology has been proposed in this paper. This technology integrates the crystallization and passivation into one process. The annealing time has been reduced by almost half of the traditional AIC technology. Additionally, the HAIC technology can also improve the resulted poly‐Si performance obviously. This technology makes the AIC technology more suitable for the industrial application.