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Estimation of surface potential variation in short channel MOSFET by solving 2D Poisson's equation

Advances in technology leads to dramatic lowering of MOSFET channel length. However short channel effects (SCE) degrade device performance and put a limit to scaling down of device dimensions. Drain Induced Barrier Lowering (DIBL) is such an effect where threshold voltage rolls off and sub-threshold current increases significantly. Study of the surface potential is important for understanding DIBL. In this paper we propose a numerical model to calculate the variation in surface potential by solving the 2-D Poisson's equation, starting from a more accurate expression for the charge distribution. The results agree with the expected trend.