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lithium-gold-related defect complexes in n-type silicon

We demonstrate that lithium diffusion into gold doped n-type silicon at temperatures between 200 and 300°C results in the formation of two lithium-gold complexes. This was investigated using deep level transient spectroscopy (DLTS) combined with secondary ion mass spectroscopy (SIMS) and capacitance voltage (CV) profiling. One of the Au-Li complexes is electrically inactive and is observed indirectly as gold passivation. Virtually all passivated gold acceptors are reactivated after annealing for 30 minutes at 400°C and this process can be reversed by additional heat treatment at lower temperatures, as long as enough Li is still present in the crystal. This reaction can be described by a mass action law between negatively charged gold atoms and positively charged lithium (Au− + Li+) with a free binding energy of approximately 0.87eV. The other Au-Li complex has a deep level, labelled L1, within the silicon band gap with an activation energy of 0.41eV. The L1 signal is strongest after annealing at temperatures between 250 and 300°C, but the passivating complex appears to be favoured at lower temperatures. From the dissociation kinetics of L1 during reverse bias annealing we find that the complex consists of one gold atom and one or more lithium atoms.