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A Study on the Characteristics of Inductively Coupled Plasma Nitridation Process

In this study, we investigated the nitridation of silicon oxide film surfaces using an inductively coupled plasma source. The plasma parameters and nitride film characteristics were measured under various nitrogen gas pressures and radio frequency power levels. Plasma parameters such as electron density, electron temperature, and ion density were measured and analyzed using several instruments. The nitridation characteristics of the thin films were characterized using X-ray photoelectron spectroscopy. The findings provide information on the correlation between nitridation rate and process parameters.