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The Present State of the Art of Wide-Bandgap Semiconductors and Their Future

This paper summarizes recent improvements in the performance and reliability of microwave and millimeter-wave wide-bandgap gallium nitride on silicon carbide devices and their promise for future integrated circuits. Many recent advances have been made as a result of the on-going Phase II wide band gap semiconductor for RF applications (WBGS-RF) program funded by the Defense Advanced Research Projects Agency (DARPA). During Phase II of the program, significant progress has been made toward realizing wide-bandgap devices that provide outstanding performance at reliability levels that will allow their use in a wide variety of high power applications.