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Magnetorezistive effect of a non-stationary non-symmetric magnetic tunnel junction

In this paper we investigate tunneling of electrons through a non-stationary non-symmetric magnetic tunnel junction (MTJ) in the approximation of small amplitude of a.c. bias voltage. We study the influence of non-symmetry of MTJ potential barrier on the effect of giant tunneling magnetoimpedance. In addition we analyze the effect of potential barrier width and d.c. bias voltage value on the frequency dependence of giant tunneling magnetoimpedance. Magnetic tunnel junctions (MTJs) exhibit giant magnetoresistance at room temperature. Because of this they are widely used for investigating spin-polarized electron transport in magnetic nanostructures and for designing novel spin-dependent nanoelectronic devices Refs. 1-5.