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Effects of photowashing treatment on electrical properties of an AlGaN/GaN heterostructure field-effect transistor

The effects of photowashing treatment on the electrical properties of an AlGaN/GaN heterostructure field-effect transistor were studied by observing changes in atomic composition and band bending at the surface of AlGaN through synchrotron radiation photoemission spectroscopy. The surface treatment produced group-III oxides on the surface of AlGaN, leaving N vacancies behind. Both the gate leakage current (IGD) and drain current (IDS) simultaneously decreased after the treatment. The decrease of IGD was due to a delay in movement of the electrons, namely, trapping and detrapping. The trapped electrons reduced the effective channel thickness, and led to the reduction of IDS.