{'fraction_non_alphanumeric': 0.03369565217391304, 'fraction_numerical': 0.02608695652173913, 'mean_word_length': 4.720496894409938, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
High-pressure powder X-ray diffraction study of Cu5Si and pressure-driven isostructural phase transition

The structural behaviour of Cu5Si under high-pressure (HP) has been studied by angular dispersive X-ray diffraction up to 49.9 GPa. The experimental results suggest that a pressure-induced isostructural phase transition occurs around 13.5 GPa as revealed by a discontinuity in volume as a function of pressure. The lattice parameter decreases with the pressure increasing for both low-pressure (LP) and HP phases of Cu5Si. However, a plot of the lattice parameter vs. pressure shows the existence of a plateau between 11.7 and 15.3 GPa. The bulk moduli, derived from the fitting of Birch–Murnaghan equation of state, are 150(2) GPa and 210(3) GPa for the LP phase and the HP phase of Cu5Si, respectively. A change in the electronic state of the copper is assumed to govern the observed structural phase transition.