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Electronic properties of zinc‐blende Scx Ga1−x N

Using the empirical pseudopotential approach, we have investigated the electronic properties of GaN, ScN and their hypothetical alloys Scx Ga1−x N in the zinc‐blende structure. The band gaps at Γ‐, X‐ and L‐points as well as the electron effective masses of Γ and X valleys were calculated as a function of scandium molar fraction x. The agreement between our results and the available experimental and previously calculated data is fair. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)