{'fraction_non_alphanumeric': 0.018290406868234417, 'fraction_numerical': 0.006345651362448675, 'mean_word_length': 5.132723112128146, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Growth and optical monitoring of organometallic vapor phase epitaxy

The OMVPE growth of ZnSe utilizing novel selenium precursors, phosphine selenides, was investigated. Photoluminescence spectra show the epitaxial layers grown to be of high quality. ZnSe films grown at 375-425 OC from tripropyl phosphine selenide, TPPSe, and DMZn in a He carrier gas have photoluminescence spectra characterized by strong near band edge emission with very little deep level emission. SEM micrographs demonstrate a good surface morphology with a characteristic "orange peel" texture. Hall measurements of the undoped films show the films to be highly resisitive. SIMS analysis demonstrates low levels of carbon incorporation,-2 x10 16 /cm 3 , comparable to levels previously seen. Low levels of H incorporation,-1018 /cm 3 are also seen, levels an order of magnitude lower than exhibited by growth with more common Se precursors, indicating the potential use of these phosphine precursors for p-type OMVPE growth applictaions. Due to the low vapor pressure of TPPSe an alternative phosphine selenide, dimethylbutylphosphine selenide, which had an increase of nearly an order of magnitude in the vapor pressure, was examined. SIMS, PL, and SEM analysis demonstrated films that were grown from DMBPSe were comparable to films grown from TPPSe, indicating a similar growth chemistry. Initial studies with a nitrogen doping source, TMSAZ was also investigated. In situ optical monitoring of OMVPE growth was also explored. A laser interferometry technique was utilized to measure the growth rate of ZnSe in situ and was found to be in good agreement with thickness measurements made by SEM. Evaluation of this technique as well as the potential for other characterization will be discussed. Finally, specular reflectance and diffuse scattering of laser light of epitaxial GaSb based films was examined for the potential use of this technique as an in situ monitoring process. Diffuse scattering of incident laser light demonstrates potential for in situ applications to monitor surface morphology and defect orientation. Acknowledgements There have been many people who have provided valuable help and assistance which has enabled me to perform this research. I would especially like to thank my thesis advisor, Professor Klavs Jensen, without whose support and direction both technical and personal I would not have been able to perform this work. I am also especially appreciative of the support I received from Dr. Christine Wang, my unofficial advisor for the work performed at Lincoln Laboratories. Her knowledge and enthusiasm for her work will be remembered. There are many others who have …