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Optical spectroscopy as a monitor of thin film growth in sputtering

Line intensity ratio has been used in astronomy to calculate plasma density and temperature. This procedure is applied to monitor thin film growth in plasma-assisted deposition, it provides very useful information such as density and temperature of the plasma. The propose of this study is monitor variations of the plasma during deposition, using wide field optical spectroscopy and establish a relation with thin film stoichiometry. We report the preparation of inhomogeneous SiOxNy thin films, by sputtering.