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Use of electron beam induced current to determine diffusion lengths and radiation damage coefficients in GaAs space solar cells

A novel technique for determining minority carrier diffusion lengths in solar cell devices is described. The technique comprises electron beam induced current measurements together with modelling based on the use of carrier generation distribution functions derived by Monte Carlo techniques. The technique is applied to various GaAs solar cells, as-made and irradiated with high-energy protons or electrons, in order to determine radiation damage coefficients in practical space solar cells. The values found are compared with those determined by others using different techniques.