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Stress Evolution in Electrodeposited Copper Metallization during Room-Temperature Aging

Current silicon technology applies copper films as an interconnect material, which is deposited by an electrodeposition method at room temperature. Immediately after deposition, these copper films are often structurally unstable and can undergo a room-temperature aging process. The microstructure of copper films grown by various thin film deposition techniques, including vapor deposition, sputtering, and electrodeposition, is known to change during room temperature storage. For example, both recrystallization and grain growth have been reported.