{'fraction_non_alphanumeric': 0.019569471624266144, 'fraction_numerical': 0.005870841487279843, 'mean_word_length': 5.564102564102564, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Conductance anomalies in quantum point contacts

We present a study of the conductance of quantum point contacts fabricated in AlGaN/GaN and Si/SiGe heterostructures. The investigated devices differ for typology (split gates and etched devices, respectively) and for the resulting potential profiles. We observe conductance quantization in multiple of 2e2/h units with superimposed anomalous plateaus and/or structures suggesting that correlation effects should be included in the description of our 1D systems.