{'fraction_non_alphanumeric': 0.030257186081694403, 'fraction_numerical': 0.0, 'mean_word_length': 5.304761904761905, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Analysis of optical XOR gate performance based on cross-polarization modulation effect in semiconductor optical amplifier

In this paper, for the first time, we analyze the optical exclusive OR (XOR) gate based on cross-polarization modulation (XPolM) effect in semiconductor optical amplifier (SOA) using nonlinear polarization rotation (NPR) theory. The extinction ratio (ER) of optical XOR gate, which reflects the performance of the gate, is calculated in consideration of the injected current, the length and the polarization angle of input signals of the SOA. The performance of the optical XOR gate can be optimized for some proper parameters of the SOA.