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In‐clustering effects in InAlN and InGaN revealed by high pressure studies

Electronic band structure calculations of InAlN and InGaN under pressure are presented for two different arrangements of the In atoms, uniform and clustered. The band gap pressure coefficients exhibit strong bowing, and the effect is especially large when indium atoms are clustered. The theoretical results are compared with the results of photoluminescence measurements performed at high hydrostatic pressures on InAlN and InGaN quasi‐bulk epilayers. We discuss the modification of the uppermost valence band due to formation of In clusters which, together with the related lattice relaxations, may be a possible source of the observed phenomena.