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Characteristics of Low Lasing Threshold Zn1-xMgxO Films Grown by RF Magnetron Sputtering

A series Znl-xMgxO (x=0∼0.16) films grown on Si (100) substrate were prepared by RF magnetron sputtering and annealed at different temperature. The UV emission peaks of free exciton (and assisted phonon replicas) and electron-hole plasma (E-H) are found in the photoluminescence (PL) from the films, where the E-H has a five-time super-linear enhanced lasing effect. The blue shift of the UV peaks in the photoluminescence spectra is found to be associated with increasing Mg content in Znl-xMgxO films, and the peaks intensity is also reinforced significantly as increasing the annealing temperature. Green emission due to the oxygen vacancy was very weak, indicating a well stoichiometry was kept in the films. The minimum lasing threshold of the samples is 35kW/cm2, corresponding to the 100nm hexagonal microstructure.