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A Transient Hardened Junction Isolated Bipolar Technology

The CDI variation has demonstrated that it can be hardened to transient ionizing radiation and will not latch-up. Furthermore, preliminary results indicate that it presently satisfies most neutron radiation requirements. The process involves only a minor variation from the conventional bipolar process, and that is the use of a p-type as opposed to an n-type epitaxial layer. It is unquestionably an easier process than the dielectric isolation process and should have the same defect density (but higher packing density) as the commercial bipolar technology. Further experiments will investigate the incorporation of Schottky clamps and both vertical p-n-p and n-p-n transistors for linear applications. Further transient and total dose radiation experiments are planned and the transient upset levels will be characterized. Presently, preliminary radiation and yield data indicate that this technology is a viable, reliable, and economical replacement for the dielectric isolated technology.