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Impacts of noble gas dilution on Si film structure prepared by atmospheric-pressure plasma enhanced chemical transport

To control the structure of poly-Si films prepared by the atmospheric-pressure plasma enhanced chemical transport (APECT) method, we have investigated the effects of noble gas (He or Ar) dilution on film structure and plasma characteristics. The deposition rate in the noble gas dilution APECT method depends mainly on the hydrogen concentration in the process gas mixture. Diluting with noble gas changes the Si film morphology dramatically. When is decreased, the ring-like RHEED pattern becomes strongly spotty, indicating the epitaxial Si growth. It is found that the film structure can be modified by varying not only but also the noble gas element.