{'fraction_non_alphanumeric': 0.03080872913992298, 'fraction_numerical': 0.02053915275994865, 'mean_word_length': 5.39344262295082, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Phonon confinement effect observed in longitudinal magnetophonon resonance in Al0.3Ga0.7As/GaAs superlattices with/without AlAs thin barriers

Electron-optical phonon interaction is studied in longitudinal transport through a series of Al0.3Ga0.7As/GaAs superlattices by measuring longitudinal magnetophonon resonance (MPR). In addition to well resolved MPR peaks caused by GaAs phonons, peaks ascribable to AlAs interface phonons are observed when a thin AlAs barrier is inserted at each GaAs/Al0.3Ga0.7As heterointerface. A calculation based on the Huang-Zhu model describes the features of experimental spectra. When the well width is reduced in Al0.3Ga0.7As/GaAs superlattices with narrow quantum wells, the AlAs-like phonon mode also becomes important in miniband transport.