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The thermostability of the Fe16N2 phase deposited on a GaAs substrate by ion-beam-assisted deposition

An Fe-N film was deposited on a GaAs(100) substrate by ion-beam-assisted deposition at an N/Fe atomic arrival ratio of 0.12. The results from X-ray diffraction showed that the film consisted of the Fe16N2 phase. The results of an annealing experiment indicated that the Fe16N2 phase formed is stable after annealing at 150 degrees C. At 200 degrees C, the Fe16N2 started to decompose to alpha -Fe and gamma '-Fe4N. And it converted to alpha -Fe and gamma '-Fe4N completely at 300 degrees C. The magnetic properties of films annealed at different temperatures were also measured and the results are discussed.