{'fraction_non_alphanumeric': 0.01615798922800718, 'fraction_numerical': 0.00718132854578097, 'mean_word_length': 4.9361702127659575, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
A comprehensive investigation on the short circuit performance of MW-level IGBT power modules

This paper investigates the short circuit performance of commercial 1.7 kV / 1 kA IGBT power modules by means of a 6 kA Non-Destructive-Tester. A mismatched current distribution among the parallel chips has been observed, which can reduce the short circuit capability of the IGBT power module under short circuit conditions. Further Spice simulations reveal that the stray parameters inside the module play an important role in contributing to such a phenomenon.