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Relationship between Sensitivities of Chemically Amplified Resist Based on Adamantane Derivatives upon Exposure to ArF Excimer Laser, Electron Beam, and Extreme Ultraviolet Radiation

Photoresists containing adamantane derivatives have been widely used in ArF lithography. However, their performance upon exposure to next-generation exposure sources such as extreme ultraviolet (EUV) radiation and an electron beam (EB) has not been sufficiently studied. In this study, we synthesized acrylic terpolymers containing adamantylmethacrylates as a model photopolymer and exposed then to an ArF excimer laser, EUV and EB. The relationship between the sensitivities to these exposure sources was clarified. Although the sensitivities to EB and EUV showed the same trend, those to EUV and the ArF excimer laser depended on the molecular structure of the resist.