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A spreading resistance based method of mapping the resistivity and potential of a depleted diode

The characterization of the depletion states of reverse operated p-n junctions is an important task within the scope of high energy physics detector development. The configuration of the sensitive volume inside these structures determines the particle detection process. Therefore a spreading resistance profiling based method has been developed to map the local resistivity and potential along the prepared edge of a depleted diode. This ``edge-SRP" method is capable of detecting the boarder of the space charge region and its transition to the electrical neutral bulk. In order to characterize the depleted space charge region, the surface potential along the edge could be measured by slightly modifying the setup. These surface potential results complement the spreading resistance one. In this paper the functionality of the developed method is verified by performing measurements on a prepared diode, which has been biased with different voltages.