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Research on the photoelectric modulation and resistive switching characteristic of ReSe2/WSe2 memtransistor

Memtransistor is a multiterminal device combining the concepts of memristor and field-effect transistor. Two-dimensional Transition Metal Sulfides(TDMS）have unique electronic structure and properties, and they are widely used in electronic devices, energy conversion, memory and other fields. In this paper, a two-dimensional ReSe2/WSe2 heterostructure memtransistor was prepared, then the resistive switching characteristics under the electrical modulation, optical modulation, and electric-optical dual gate control are discussed. The results show that the gate control is an effective modulation method, which can change the on/off ratio of the device from 101 ~ 105. Then, the multi-level resistance and on/off ratio of the memtransistor can be controlled by the change of light wavelength and the illumination power. Moreover, the switching ratio of the device can also be changed in the range of 102 ~ 105 by electric and light dual-gate control, and the reasons for the change of resistance states of the device under different modulation conditions are analyzed. Furthermore, after 225 cycles and 1.9×104 s, the ReSe2/WSe2 heterostructure memtransistor still maintains a switch ratio close to 104, indicating the good stability and durability of the device. It demonstrates that the ReSe2/WSe2 memtransistor will be one of potential candidates for the next generation nonvolatile memory applications.