{'fraction_non_alphanumeric': 0.033261802575107295, 'fraction_numerical': 0.022532188841201718, 'mean_word_length': 5.1381578947368425, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Characteristics of Charging Effect in One-Dimensional Array of Bi2Sr2CaCu2O8+δ Intrinsic Josephson Junctions

For the observation of the charging effect on a Josephson junction, the charging energy (Ec) must be much larger than the Josephson coupling energy (EJ) and thermal energy (kBT). We investigated the properties of submicron-sized Bi2Sr2CaCu2O8+δ intrinsic Josephson junctions (IJJs) at low temperature. The current–voltage curve of IJJs with a junction area of 0.06 µm2 showed a much higher resistance state near the zero bias voltage regions when the measurement temperature decreased to 72.6 mK. The ratios of Ec/EJ and Ec/kBT were 7.04 and 5.78, respectively, which indicates that the charging effect is dominant. In addition, a characteristic voltage structure due to the charging effect in one-dimensional junction array, which is composed of the offset voltage and the threshold voltage of the junction, was observed.