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Be Doping Effect on Growth Kinetics of GaAs Grown by MBE

In order to investigate the Be doping effect on growth kinetics of GaAs grown by molecular beam epitaxy, measurements of the intensity oscillations in reflection high-energy electron diffraction and of the depth profile of Be by secondary ion mass spectroscopy have been carried out. Be has been accumulated at the growth front and the accumulated Be has induced surface roughness. A critical surface concentration of Be to affect the growth kinetics has been estimated at 0.02 monolayer. The mechanism for the Be-induced roughness at the growth front is discussed.