{'fraction_non_alphanumeric': 0.02494061757719715, 'fraction_numerical': 0.0059382422802850355, 'mean_word_length': 5.909836065573771, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
High-performance and electrically stable solution-processed polymer field-effect transistors with a top-gate configuration

The electrical performance of organic field-effect transistors (organic FETs or OFETs) based on the soluble semiconductor regioregular poly(3-hexylthiophene) (P3HT) with a top-gate configuration is investigated. P3HT FETs with the top-gate configuration show that field-effect mobility is independent of substrate surface energy and are comparable to bottom-gate P3HT FETs with hydrophobic surface passivations on SiO2 gate insulators. Gate bias stress experiments reveal a high electrical stability with negligible hysteresis and small threshold voltage shifts in top-gate devices with different polymer gate insulators, which is comparable or superior to that of hydrogenated amorphous silicon thin film transistors.