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Thin Si channel Back Enhanced (BE) SOI pMOSFET Photodetector under different bias conditions

This paper explores the light sensitivity of the new Back Enhanced (BE) SOI MOSFET. This new device has a reconfigurable operation (can work both like p- and n-type transistors depending on the back gate bias) and an extremely simple fabrication process, without any intentional doping steps and a planar structure. Two different bias conditions to detect light will be compared aiming a higher difference of drain current (sensitivity). The first one is based on better conduction due to the optical generation and the other thanks to the threshold voltage variation. Experimental analysis were performed and the results were compared for different bias conditions.