{'fraction_non_alphanumeric': 0.030245746691871456, 'fraction_numerical': 0.005671077504725898, 'mean_word_length': 4.850828729281768, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Synthesis of copolymers containing diazoketo groups and their application as DUV resists

We synthesized a new type of polymers that have diazoketo groups instead of acid-labile protecting groups. The polymers do not need a photoacid generator for formulation of resists. That is, the new matrix polymers absorb UV light and produce carboxylic groups. Also, there is no necessity for a post-exposure bake step, which is the cause of post-exposure delay effects. New monomer, ethyl 2-diazo-4-methyl-3-oxo-pent-4-enoate was synthesized. This monomer was copolymerized with hydroxystyrene and adamantyl methacrylate. After UV exposure, the polymers became soluble in an aqueous base developer. The polymers showed bleaching effect after UV exposure. Thermal properties of the polymers were measured by TGA and DSC. Characterization of the polymers has been done using other techniques such as FT-IR, NMR, GPC, and UV. The resist patterns of 0.8 μm feature size were resolved using a DUV contact printer and with a tetramethylammonium hydroxide aqueous solution.