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Characterization of GaAs:Cr-based Timepix detector using synchrotron radiation and charged particles

The interest in the use of high resistivity gallium arsenide compensated by chromium (GaAs:Cr) for photon detection has been growing steadily due to its numerous advantages over silicon. At the same time, the prospects of this material as a sensor for pixel detectors in nuclear and high energy physics are much less studied. In this paper we report the results of characterization of the Timepix detectors hybridized with GaAs:Cr sensors of various thickness using synchrotron radiation and various charged particles, including alphas and heavy ions. The energy and spatial resolution have been determined. Interesting features of GaAs:Cr specific to the detector response to an extremely dense energy deposit by heavy ions have been observed for the first time. The long-term stability of the detector has been evaluated based on the measurements performed over one year. Possible limitation of GaAs:Cr as a sensor for high flux X-ray imaging is discussed.