{'fraction_non_alphanumeric': 0.014641288433382138, 'fraction_numerical': 0.03806734992679356, 'mean_word_length': 5.162162162162162, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Electrical properties of semi-insulating GaAs irradiated with 5 MeV electrons

The resistivity, Hall coefficient, Hall mobility, and Hall concentration in undoped semi-insulating GaAs samples irradiated by 5 MeV electrons of various cumulative doses ranging from 1kGy to 24 kGy and different dose rate were measured and analysed at the temperature 400 K and 300 K. The resistivity and the electron Hall concentration decrease while Hall coefficient and the electron Hall mobility increase with increasing cumulative electron dose. The electron Hall mobility increased from 6950 cm2/Vs to about 7680 cm2/Vs at 300 K both samples irradiated with the cumulative electron dose of 24 kGy.