{'fraction_non_alphanumeric': 0.021621621621621623, 'fraction_numerical': 0.006486486486486486, 'mean_word_length': 4.646341463414634, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Influence of Dry-Etch Patterning of Top Electrode and SrBi2Ta2O9 on the Properties of Ferroelectric Capacitors

In this article, we investigate the influence of the dry etch of SrBi 2 Ta 2 O 9 (SBT) and Pt top electrode (TE) on the ferroelectric properties of Pt/SBT/Pt capacitors, and we discuss the effect of recovery anneals appliedafter TE deposition, TE etch, and SBT etch. We have determined that the TE etch step damages the capacitors through a charging effect, which is dependent on the perimeter-to-area ratio. Complete recovery of the electrical damage is provided by an anneal step after TE etch. We have also evidenced a lateral physical damaging of the SBT film after SBT dry etch, which is well correlated with the observed degradation of the remanent polarization P r of the capacitors. A strong further degradation of P r is found when the Pt bottom electrode is significantly etched during the SBT overetch.