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Design and implementation of static 2:1 frequency divider based on GaAs pHEMT

This study presents a low phase noise static 2:1 frequency divider in a 0.15 µm gallium arsenide pseudomorphic high electron mobility transisitor process. The proposed divider is based on an improved source coupled logic structure. The maximum bandwidth utilization of the frequency divider is improved up to 100% through theoretical analysis. This frequency divider with low phase noise achieves an operating frequency of direct current ~4.8 GHz for 0 dBm input, and the phase noise is −131.06 dBc/Hz@10 MHz. The chip area is 0.624 × 0.923 mm.