{'fraction_non_alphanumeric': 0.021413276231263382, 'fraction_numerical': 0.0021413276231263384, 'mean_word_length': 5.324324324324325, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
New aspects of intrinsic gettering for CCD imagers

The influence of as-grown microdefects on the CCD-Imager parameters is observed. It's shown that the defect structure of the initial silicon wafers defines directly both denuded zone/gettering zone formaition and Si/SiO2 interface behavior in MIS-structures under intrinsic gettering annealing. For the defect structure investigation the gamma-diffraction method was used side by side with some traditional methods.