{'fraction_non_alphanumeric': 0.020884520884520884, 'fraction_numerical': 0.007371007371007371, 'mean_word_length': 5.52, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
The Temperature Dependence of Mismatch in Deep-Submicrometer Bulk MOSFETs

We present a study of the temperature dependence of transistor mismatch in a 65-nm CMOS platform over a temperature range of 0degC to 125degC. We show that the relative-drain-current-mismatch fluctuation properties improve marginally in strong inversion, while they are strongly affected in the subthreshold region. This is compared and explained with a commonly used model. Furthermore, we analyze the change over temperature of the ION mismatch of individual matched pairs. This analysis shows, for the first time, that although relative-current-mismatch fluctuation standard deviations estimated on whole populations are reduced at higher temperatures, the current mismatch of individual pairs can change substantially over temperature.