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Novel Crystallization Process for Germanium Thin Films: Surfactant-Crystallization Method

A new process called the surfactant-crystallization method is used to fabricate crystalline Ge thin films. By depositing Ge on a heated substrate, on which a Au film is predeposited, the formation of crystal Ge is confirmed at a substrate temperature as low as 200 °C and at a heating duration of only 60 s.