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Characteristics of cylindrical surrounding-gate GaAsxSb1−x/InyGa1−yAs heterojunction tunneling field-effect transistors

A III–V heterojunction tunneling field-effect transistor (TFET) can enhance the on-state current effectively, and GaAsx Sb1−x/InyGa1−yAs heterojunction exhibits better performance with the adjustable band alignment by modulating the alloy composition. In this paper, the performance of the cylindrical surrounding-gate GaAsx Sb1−x/InyGa1−yAs heterojunction TFET with gate–drain underlap is investigated by numerical simulation. We validate that reducing drain doping concentration and increasing gate–drain underlap could be effective ways to reduce the off-state current and subthreshold swing (SS), while increasing source doping concentration and adjusting the composition of GaAsx Sb1−x/InyGa1−yAs can improve the on-state current. In addition, the resonant TFET based on GaAsx Sb1−x/InyGa1−yAs is also studied, and the result shows that the minimum and average of SS reach 11 mV/decade and 20 mV/decade for five decades of drain current, respectively, and is much superior to the conventional TFET.