{'fraction_non_alphanumeric': 0.03190184049079755, 'fraction_numerical': 0.00245398773006135, 'mean_word_length': 5.0, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Theoretical studies on the two-dimensional electron-gas properties of MgZnO/MgO/ZnO heterostructures

The polarization effects on the two-dimensional electron-gas (2DEG) of the ZnO/MgO/MgZnO heterostructure were theoretically investigated. The carrier confinement in the MgZnO/MgO/ZnO high-electron-mobility transistor (HEMT) structure is shown to be superior to that in the conventional MgZnO/ZnO HEMT structure. The electron density is shown to be very sensitive to the layer thickness and to become a maximum at a layer thickness of 2 nm. Also, the MgZnO/MgO/ZnO HEMT structure shows a larger saturation drain current than the conventional MgZnO/ZnO HEMT structure does. This is mainly due to the increased channel electron density induced by the enhanced polarization charge with the inclusion of the MgO layer.