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Cladding layer for photonic integrated circuits

Characterization results of cladding layer for photonic integrated circuits are present. The silicon oxide films were deposited by various methods. The mechanical stress, depending upon the methods of film deposition, had been measured. TEOS silicon oxide exhibited large mechanical stress. The stress of polymer benzocyclobutene (BCB) was also measured. Its stress is only 29 MPa. The roughness of BCB surface is 1.18 nm. The mode profiles of planar waveguide were calculated.