{'fraction_non_alphanumeric': 0.012037037037037037, 'fraction_numerical': 0.003703703703703704, 'mean_word_length': 5.284883720930233, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Direct observation of polarons in electron populated quantum dots by resonant Raman scattering.

The general problem of the pairing of strongly interacting elementary excitations producing new quasiparticles such as polarons arises in many areas of solid state physics. Recent interest in polaron formation in semiconductor quantum dots has been motivated by the need to understand the physical nature of the carrier relaxation processes and their role in quantum-dot based devices. We report on the direct observation of polarons in InAs/GaAs self-assembled quantum dots populated by few electrons where the polarons are strongly coupled modes of quantum dot phonons and electron intersublevel transitions. The degree of coupling is varied in a systematic way in a set of samples having electron intersublevel spacing changing from larger to smaller than the longitudinal optical phonon energy. The signature of polarons is evidenced clearly by the observation of a large (12-20 meV) anticrossing for both InAs and GaAs-like quantum dot phonons using resonant Raman spectroscopy.