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A new realisation of Schottky diodes on n-type InP

The authors have investigated new Schottky diodes on MOCVD-grown n-type InP, by introducing a few monolayers of GaInP, GaInAs ternary compound between the metal and the semiconductor. In order to improve the contact behaviour, they have modified on the one hand the experimental conditions e.g. the nature of the metal, the temperature and the duration of the contact thermal annealing and on the other hand, the thickness of the ternary epilayer. Electrical characterisations (current-voltage, capacitance-voltage) were performed and analysed in a conventional way. Optimised parameters of this study were found to be Pt/Ti/Pt/Au/GaInP(200-300 AA) with a contact thermal annealing of 430 degrees C for 2 min. The best diodes exhibit a barrier height of 0.58+or-0.02 eV with an ideality factor of 1.03. The metallurgical behaviour of the contact was studied by Auger electron spectroscopy and by STEM, which revealed a strong diffusion of the Pt into the ternary compound layer after annealing. This study on n-type InP Schottky diode has led to the formation of a MESFET: the preliminary results are presented here.