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Electromagnetoelasticity Effect in Silicon

The paper is devoted to the study of the magnetostimulated dynamics of dislocations in silicon and the influence of electric current on this process. As a result of the conducted studies, it was found that preliminary exposure of n-and p-type silicon single crystals in a constant magnetic field (B = 1 T, exposure time up to 30 minutes) leads to an increase in mobility of dislocation segments in them during plastic deformation of samples (Т=675 оС, σ=60–100 MPa, t=45–60 minutes). The quadratic dependence of the dislocation ranges on the induction of a constant magnetic field was found on the samples studied. A decrease in the activation characteristics of the process of displacement of linear defects during the flow of electric current during deformation is also detected: the transmission of electric current helps to reduce the activation energy of the process from 2.2± 0.2 eV to 0.7±0.1 eV. The observed changes are attributed to a decrease in the interaction energy of linear defects with dislocation stoppers based on the dopant.