{'fraction_non_alphanumeric': 0.06064209274673008, 'fraction_numerical': 0.04756242568370987, 'mean_word_length': 4.041916167664671, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
A 3.1-10.6 GHz RF front-end for multiband UWB wireless receivers

The paper describes the design of a 3.1-10.6 GHz RF front-end that consists of a wideband low-noise amplifier (LNA), a single-ended-to-differential converter, and two double-balanced mixers for quadrature downconversion. Targeted for multiband UWB wireless applications, the designed RF front-end chip was fabricated in a 0.25-/spl mu/m SiGe BiCMOS technology. Assembled in a low-cost 24-lead LPCC package and mounted on a high-frequency ceramic printed circuit board, the front-end delivered 20.6-21.8 dB of power gain and 4.1-6.2 dB of double-sideband noise figure over the entire 3.1-10.6 GHz UWB frequency band, respectively, and achieved an input third-order intercept point (IIP3) of -12.7 dBm at 3.3 GHz. The measured current consumption was 31 mA from a 2.7 V supply.