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Properties of Zn3P2 Thin Films Grown by Ionized-Cluster Beam Deposition

Zinc phosphide (Zn3P2) thin films have been fabricated by ionized-cluster beam (ICB) deposition on glass substrates. Highly crystalline Zn3P2 films are obtained with a strong preferred orientation along the c-axis by optimizing the acceleration voltage and substrate temperature. The Zn3P2 films have extremely good stoichiometry compared with those by conventional vacuum evaporation: fluorescent X-ray spectroscopy indicates Zn3P2.05 for the Zn3P2 films deposited at an acceleration voltage of 2 kV and substrate temperature of 300°C. The absorption coefficient is deduced from the optical transmission and reflectivity data; the fundamental absorption edge is obtained as 1.55 eV at 300 K.