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Mapping the internal potential across GaN/AlGaN heterostructures by electron holography

Electron holography has been used to analyse the potential profile across GaN/Al x Ga 1-x N heterostructures. A potential difference of (0.21 ± 0.1) and (0.38 ± 0.12) eV is experimentally observed at the GaN/Al 0.19 Ga 0.81 N and GaN/Al 0.37 Ga 0.63 N interfaces, respectively. The potential energy profiles show the presence of a positive sheet charge and a two-dimensional electron gas with a density of 10 12 cm -2 . These measurements are smaller than measurements by other techniques. An analysis of the technique and of observed discrepancies is presented.