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Characterization of Inverse Temperature Dependence in logic circuits

As the supply voltage (VDD) approaches the device threshold voltage (VT), the elevated temperature results in increased device current. This phenomenon is generally known as Inverse Temperature Dependence (ITD). In this paper, we propose a test structure with a built-in poly-resistor-based heater to characterize ITD in digital circuits. Our measurements from a 130nm test-chip show that the Zero-Temperature-Coefficient (ZTC) point varies by circuit type, and further fluctuates due to process variation. A more accurate ITD-sensitive thermal sensor is thus needed for better temperature tracking.