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Room temperature amplification of optical-beating photoresponse in HEMTs

The authors report on tunable terahertz resonant detection of two 1.55 mum cw-lasers beating by plasma waves in AlGaAs/InGaAs/InP high-electron-mobility transistor. The fundamental plasma resonant frequency and its odd harmonics can be tuned with the applied gate-voltage in the range 0-600 GHz. Amplification of photoresponse under applied DC drain-source current is demonstrated.