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Statistical analysis of CBRAM endurance

In this paper, we address endurance reliability of resistive RAM at array level. To this aim, Al2O3 based Conductive Bridging RAM (CBRAM) kb arrays are studied. Maximum number of cycles the memory can sustain is statistically analyzed. Impact of SET and RESET conditions and Al2O3 thickness on endurance distributions is discussed. Finally, gradual endurance degradation mechanism is discussed along with defect generation in the resistive layer.