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Modelling of a resonant tunnelling hot electron transistor

A semiclassical model of a resonant tunnelling hot electron transistor (RHET) is proposed. The model includes quantum interference and multiple scattering by means of a correlation function and mean free path. The DC properties of a RHET are calculated and analysed. The results show that the maximum common-emitter current gain of a RHET can be achieved by modulating the base width and barrier height of the emitter resonant tunnelling structure.