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Growth, electrical transport properties and microtopographic studies of Mo0·3W0·7Se2 single crystals

Abstract Single crystals of mixed transition metal dichalcogenide Mo0·3W0·7Se2 were grown by direct vapour transport technique. The stoichiometric composition and the crystallographic lattice parameters of the grown crystals were determined by energy dispersive X-ray analysis and X-ray diffraction techniques respectively. The optical energy bandgap of the as grown single crystals was determined by optical absorption studies. The high temperature Hall effect measurement showed that the carrier concentration increases with temperature, asserting the specimen to be a semiconductor. The Hall coefficient RH showed that the as grown crystals are p type semiconductors. The semiconducting nature was further substantiated from the direct current resistivity versus temperature measurement. The room temperature direct current resistivity variation with pressure showed a linear decrease in resistivity with the increase in pressure. Detailed surface microtopographic studies of these crystals by means of optical microscopy showed that spiral and the layer mechanism are predominant during crystal growth.