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Effects of valence fluctuation and pseudogap formation on phonon thermal conductivity of Ce-based compounds with ε-TiNiSi-type structure

We have measured the thermal conductivity of isostructural compounds CePtSn, CeNiSn, CeRhSb, and CeRhAs with the orthorhombic e-TiNiSi-type structure. It is found that the phonon thermal conductivity is reduced in a systematic way with increasing Kondo temperature T K . The scattering of phonons by valence fluctuations should play a dominant role in such a reduction. The gap formation in the electronic density of states enhances the phonon thermal conductivity significantly in CeRhAs with a gap width of 280 K, while it is weak in CeNiSn or CeRhSb with a pseudogap of 20-30 K. A phenomenological model is proposed for the unusual temperature dependence of phonon thermal conductivity by taking account of the strong dependence of the electron-phonon scattering rate on both T K and the energy gap.