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Preparation, Processing and Tunneling in YBa2Cu3O7-δ-Pb Native-Barrier Structures

We have developed a procedure for the preparation of small (40×40 µm2) window-type YBa2Cu3O7-δ-Pb junctions with YSZ insulator and native tunnel barrier. We present the patterning technique of the two electrodes based on photolithography and wet etching. The nature of the barrier is found to be semiconducting. The tunneling measurements show gap-like feature of YBa2Cu3O7-δ at 8.5 meV and some additional features related to Pb and YBa2Cu3O7-δ phonon spectra.