{'fraction_non_alphanumeric': 0.031914893617021274, 'fraction_numerical': 0.0013297872340425532, 'mean_word_length': 5.024, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Low-frequency noise in UHV/CVD Si- and SiGe-base bipolar transistors

In this work we present the first comprehensive investigation of the low-frequency noise characteristics of an advanced epitaxial Si- and SiGe-base bipolar technology grown by the UHV/CVD technique. The magnitude of the 1/f noise is comparable for SiGe HBTs and Si BJTs for identical bias, geometry, and temperature, indicating that the use of thermodynamically stable SiGe strained-layers does not degrade transistor noise performance. In some of the Si and SiGe samples we have observed random telegraph signals (RTS) associated with excess generation-recombination (G/R) noise. Temperature measurements have been made to extract activation energies of the associated G/R centers.