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Sructural evolution of GaN during initial stage MOCVD growth

The structural evolution of GaN films during the initial growth process of metalorganic chemical vapor deposition (MOCVD) - low temperature nucleation layer growth, annealing, and high temperature epitaxial growth - was investigated in a synchrotron x-ray scattering experiment. The nucleation layer grown at 560 o C that was predominantly cubic GaN consisted of tensile-strained aligned domains and relaxed misaligned domains. The hexagonal GaN, transformed from the cubic GaN during annealing to 1100 o C, showed disordered stacking. The atomic layer spacing decreased as the fraction of the hexagonal domains increased. Subsequent growth of epitaxial GaN at 1100 o C resulted in the formation of ordered hexagonal GaN domains with rather broad mosaicity.