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Method for Pattern Formation of Semiconductor Device

A method for forming a pattern of a semiconductor device is provided to easily form a pattern of a limit resolution or less of exposure equipment by using a dual patterning process. A method for forming a pattern of a semiconductor device includes the steps of: forming a C-rich polymer layer, an anti-reflective film including silicon, and a photosensitive film in sequence; and performing a dual patterning process. The patterning process is a dual patterning process of a negative tone or a dual patterning process of a positive tone. The dual patterning process includes the steps of: forming a first photosensitive film pattern by exposing and developing the first photosensitive film; forming a C-rich polymer layer pattern by etching the first anti-reflective film and the C-rich polymer layer; forming a second photosensitive film pattern by forming a second anti-reflective film and a second photosensitive film in sequence; forming a C-rich polymer layer pattern(32''); and forming an etched layer pattern.