{'fraction_non_alphanumeric': 0.032091097308488616, 'fraction_numerical': 0.002070393374741201, 'mean_word_length': 5.081761006289308, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Control of dark currents in multi-quantum well solar cells by use of thin tunnel barriers

In order to investigate the predicted performance of solar cells, which employ multi-quantum wells (MQWs) and other types of quantum structures, it is important that one achieves a high material quality with minimum non-radiative recombination losses at the QW heterointerfaces, and a high escape rate of photocarriers out of QWs into the "collector" region via optimization of MQW structures. In this work, we have investigated on; (1) the fabrication InGaAs/GaAs-based MQW solar cells by using atomic H-assisted molecular beam epitaxy (H-MBE) technique in order for efficient defect and interface control, and (2) the effect of "tunnel barriers" introduced within a conventional-type MQW solar cell comprised of a series of square-shaped QWs. In particular, this structure is intended for reducing the dark current thereby improving the overall response of MQW solar cells.