{'fraction_non_alphanumeric': 0.018018018018018018, 'fraction_numerical': 0.005405405405405406, 'mean_word_length': 5.497076023391813, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Excitation Power Dependent Photoluminescence Behavior in Etched Quantum Wires having Silicon Interlayer-Based Edge Passivation and Its Interpretation

A novel Si interface control layer (ICL)-based passivation technique is applied to the edge passivation of etched In0.53Ga0.47As wires and the effect of the passivation is characterized in terms of the photoluminescence (PL) properties of the wires. The observed PL behavior is found to be strongly excitation power-dependent and inexplicable by the conventionally used PL model assuming a constant surface recombination velocity and an optically “dead layer” having a constant width at the wire edges. A novel one-dimensional computer simulation of wire PL is developed. The result of the simulation indicates that the surface recombination velocity and the surface depletion layer width are excitation power-dependent, providing an explanation for the observed excitation power-dependent PL behavior. The theory and experiments show that the Si ICL edge passivation significantly reduces the surface state density at the edge and improves the PL properties.