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On the mechanism of electrical conduction in plasma-polymerised thiophene thin films

High-field dark conduction in (DC discharged) plasma-polymerised thiophene thin films is reported. A contact-limited Schottky mechanism is found to predominate at fields above 3*105 V cm-1. The dominance of the Schottky mechanism is confirmed by employing dissimilar-electrode configurations. The metal-polymer interface barrier heights calculated are 1.22 eV for Al, 1.03 eV for Cu and 0.879 eV for Au.