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Hydrostatic Pressure Study of GaAsSbN/GaAs Quantum Well Based Optoelectronic Devices

In order to investigate the effect of hydrostatic pressure and N impurities on optoelectronic properties of GaAsSbN/GaAs Quantum Well (QW), electronic band structure, band offsets, effective mass of charge carries, relative permittivity and optical gain have been calculated under the vicinity of 16 band k.p Hamiltonian. It has been anticipated that GaAsSbN/GaAs QW system would be a potential candidate for numerous optoelectronic applications such as efficient tandem solar cells, which can cover up the entire regime (850nm to 1850nm) of AM 1.5 spectra, LASER diodes for the potential applications in the 1.3−1.55 μm regime and wide range optical modulators.