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Study of Strain Effects on Carbon-Based Transistors With Semi-Analytic and Ab Initio Models

In this paper, the current–voltage characteristics of a graphene-based transistor in the presence of external strain are computed with different methods. A simplified semi-analytic method allows fast computation of the electric parameters by granting a good accuracy. A more complex matrix method based on second quantized version of Schrodinger equation by means of non-equilibrium Green’s function is used to validate the semi-analytic one. Both models are developed to evaluate the impact of mechanical stresses on this novel class of nano-transistors, where they are aimed for applications in the domain of flexible electronics.