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Molecular Beam Epitaxial Growth of InxGa1-xAs and InxAl1-xAs on Si Substrates

Surface morphologies of InxGa1-xAs and InxAl1-xAs (X∼0.53) layers grown on Si (100) substrates by molecular beam epitaxy are investigated. It is found that the InxAl1-xAs/InxGa1-xAs multiquantum wells buffer layer and the substrate misorientation play an important role in the reduction of the surface roughness. The surface morphologies of InxGa1-xAs and InxAl1-xAs on Si compare well with that of GaAs on Si.