{'fraction_non_alphanumeric': 0.03464203233256351, 'fraction_numerical': 0.021939953810623556, 'mean_word_length': 5.237410071942446, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Effect of Fullerene Concentration on Flat-Band Voltage Shift of Capacitance–Voltage Curve in Organic Memory Devices Fabricated Using Hybrid Poly(4-vinyl phenol) Active Layer Containing Fullerene

Organic memory devices based on a hybrid poly(4-vinyl phenol) (PVP) layer containing fullerene (C60) were formed by a spin coating method. Atomic force microscopy (AFM) images showed that the surface of the PVP layer containing C60 was uniform. Capacitance–voltage (C–V) measurements on Al/C60 embedded in PVP layer/p-Si(100) devices at room temperature showed a hysteresis with a large flat-band voltage shift due to the existence of C60 molecules, indicative of the charge storage in the C60 molecules. The magnitude of the flat-band voltage shift for the memory devices with a hybrid active layer consisting of PVP and C60 increased with increasing C60 concentration.