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Analysis of Polyethylene Latex Particle Removal Mechanism on SiO2 Wafer Using Ultrasonic Spray Cleaning

In single-wafer cleaning of semiconductor chips and flat panel displays, various cleaning methods tailored to the process, such as two-fluid spray cleaning, high-pressure jet spray cleaning, ultrasonic cleaning spray cleaning, and scrub cleaning have been proposed and put to practical use. In this study, Polyethylene Latex (PSL) particles 0.2 μm in diameter and 1 μm in diameter were electro-sprayed on the SiO2 The soil samples, and then cleaning efficiency was measured using two types of ultrasonic sprayerswith frequencies of 1 MHz and 3 MHz confirmed. The soil samples are controlled for adhesion by deforming the PSL particles by heating the silicon wafer from 300K to 425K. From the experimental results, it was found that the is determined by factors other than the conventionally reported radiation flow in PSL particles.