{'fraction_non_alphanumeric': 0.0196078431372549, 'fraction_numerical': 0.02262443438914027, 'mean_word_length': 4.724137931034483, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Application of the flip-chip bonding technique to the 10 Gbps laser diode module

Flip chip bonding technique using Pb/In solder bumps was applied to packaging a 10 Gbps laser diode (LD) submodule for high-speed optical communication systems. Dependence of parasitic parameters on the small signal modulation bandwidth of the LD submodule was investigated through SPICE simulations. Experimentally, a small signal modulation bandwidth of 14 GHz at 100 mA dc bias current and the clean modulation response up to 20 GHz were obtained in the flip-chip bonded LD submodule, which was wider than that of the wire-bonded 10 Gbps LD submodule by a difference of 3.8 GHz.