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Study on the Band Gap Energy of CdIn2Te4 Crystal Obtained from the Photocurrent Spectroscopy

The p-CdIn2Te4 single crystal has been grown by using Bridgman method without a seed crystal in a three-stage vertical electric furnace. From the photocurrent measurement, it was found that the three peaks of A, B, and C corresponded to the intrinsic transition due to the band-to-band transition from the valence band state Γ7(A), Γ6(B), and Γ7(C) to the conduction band state Γ6, respectively. Also, the valence band splitting of the CdIn2Te4 crystal has been first confirmed through the photocurrent spectroscopy. The crystal field splitting and the spin orbit splitting were obtained to be 0.2360 and 0.1119 eV, respectively. Also, the temperature dependence of the band gap energy of the CdIn2Te4 crystal has been driven as the following equation of Eg(T) = Eg(0) − (9.43 × 10 -3 )T 2 /(2676 + T). In this equation, the Eg(0) was estimated to be 1.4750, 1.7110, and 1.8229 eV at the valence band state A, B, and C, respectively. The band gap energy of the p-CdIn2Te4 at room temperature was determined to be 1.2023 eV.