{'fraction_non_alphanumeric': 0.020474137931034482, 'fraction_numerical': 0.020474137931034482, 'mean_word_length': 5.071895424836601, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Effect of an ultrathin molybdenum trioxide interlayer on the performance of inverted quantum dot light-emitting diodes

Quantum dots are a promising new candidate for use as emissive materials in the next generation of light-emitting diodes for lighting and display applications. One of the key issues in the solution preparation of inverted quantum dot light-emitting diodes (QDLEDs) is making a suitable sandwich structure of hydrophilic and hydrophobic layers. We solved this problem by inserting an ultrathin film of thermally evaporated MoO3 between a hydrophilic PEDOT:PSS layer and a hydrophobic PVK layer by controlling the delicate process. Inverted QD LEDs with an optimal MoO3 thickness of 5 nm exhibited a maximum current efficiency of nearly 4 cd A−1, a maximum EQE of 2.7682%, and a maximum luminance of 9317 cd m−2. Furthermore, the MoO3 interlayer extends the lifetime of the QDLED devices to approximately 300%.