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Adaptive energy discretization of the semiconductor Boltzmann equation

A new deterministic method is presented for solving the semiconductor transport equation of electrons in one‐dimensional silicon device structures. The developed numerical scheme provides a dynamical adaption of the energy discretization to speed up the computation. The adaptive discretization is realized by a time‐ and space‐dependent scaling of the energy variable. Several numerical tests are performed for the bulk case and for a one‐dimensional diode structure. The obtained results prove the efficiency of the proposed method to be significantly increased compared to schemes using fixed energy grids.