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Low-Energy Argon Broad Ion Beam and Narrow Ion Beam Milling of In Situ Lift-Out FIB Specimens

Focused ion beam (FIB) tools are commonly used to prepare transmission electron microscopy (TEM) specimens due to the site specificity and accuracy of specimen thinning and extraction that the tools provide [1,2]. However, it has been shown that milling with Ga ions results in a damage layer on each side of the TEM lamella, the thickness of which is proportional to the voltage of the ion beam [3]. The damage layer reduces the signal-to-noise ratio and contrast in TEM and scanning transmission electron microscopy (STEM) images, which negatively affects the ability to perform high resolution imaging and analysis. To minimize this, a low-energy Ga ion beam (≤ 2 keV) can be used for final thinning of the TEM lamella [3-4]. Post-FIB milling with a low-energy Ar ion beam can then be done to remove the damage layer and Ga implantation [4-6]. When used in combination, specimens free of surface damage and Ga implantation can be created [7].