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Transient charging of MIS diodes prepared by Al overlayer induced plasma oxidation of InP

Resistance of InP substrates to oxidation via plasma anodization can be suppressed by Al-coating of the substrates (6-8 nm) prior to the plasma treatment. In the temperature range 150-200 degrees C thicknesses of the InP native oxide up to approximately 50 nm could be achieved. Resulting MOS diodes were characterized by combined feedback charge capacitance and current DLTS measurements. For a zero applied bias, the Fermi level at the surface is unpinned and positioned about 0.1 eV below the conduction band minimum. The density of interface states rises steeply when approaching the conduction band edge, preventing the devices from reaching a true accumulation of electrons at the InP/oxide interface.