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P‐1.14: The Influence of Dual‐channel on the Performance of Self‐Align Top‐Gate IGZO Thin Film Transistors

In this work, fully transparent dual‐layer channel self‐aligned top‐gate amorphous indium gallium zinc oxide thin‐film transistors (a‐IGZO TFTs) are fabricated on glass substrates. Dual‐layer channel is consist of indium gallium zinc oxide with different partial pressure of oxygen while sputtering. An oxygen‐rich IGZO was deposited to control the threshold voltage and an oxygen‐poor IGZO was then deposited to modulate device mobility. The device exhibited the excellent performances, including: a field effect mobility of 5.33 cm2/Vs, a suitable threshold voltage of 1.68V, a sub‐threshold swing of 0.54V/dec and a high on/off current ratio. Furthermore, the devices also shows great stability under bias stress.