{'fraction_non_alphanumeric': 0.015580736543909348, 'fraction_numerical': 0.00424929178470255, 'mean_word_length': 5.147826086956521, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Method for Theoretical Prediction of Indium Composition in Coherently Grown InGaN Thin Films

InxGa1-xN has attracted considerable interest as a material for multi junction solar cells. In this study, we performed thermodynamic analyses to calculate the relationship between the input In molar ratio and solid composition of a coherently grown InxGa1-xN thin film that is subjected to planar compressive or tensile stress. The theoretical approach incorporates energy loss of a thin-film system due to lattice constraint from the substrate. The results show that the indium composition x of coherently grown InxGa1-xN is lower than that of stress-free InGaN. This represents the composition pulling effect.