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Reliability issues and length dependence of nanocrystalline graphene field-effect transistors for gas sensing

Transfer-free in situ catalytic chemical vapor deposition is used to fabricate nanocrystalline graphene field-effect transistors (nGFETs). The reliability of the nanocrystalline graphene field-effect transistors is analyzed by applying electrical stress carried out by continuous measurements of 60 transfer characteristics. As a result of these measurements charge trapping densities have been estimated. Furthermore, the dynamics of the charge trapping behavior is analyzed considering the hysteretic loop present in the transfer characteristics. Additionally, the sensitivity at different backgate biases VBG of the nGFETs towards 2 parts-per-million (ppm) of ammonia is analyzed with respect to the nanocrystalline graphene field-effect transistor channel lengthL. Based on these results the origin of the gaseous sensitivity of the nanocrystalline graphene field-effect transistors is discussed comparing the material properties of the nanocrystalline graphene with respect to the impact of the metal contact Schottky barriers.