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Interface characterization of a W coated diamond/Al composite for thermal management applications

Over the last decade, a diamond particle reinforced Al matrix, namely diamond/Al, composite has been developed for thermal management applications, mainly in the microelectronic industry. This composite has demonstrated an excellent combination of a Thermal Conductivity (TC) as high as 600 W/mK and a Coefficient of Thermal Expansion (CTE) lower than 10 ppm/K, being compatible with that of electronic components. However, considering the TC (~ 1800 W/mK) of the diamond particles incorporated, it is clear that the overall TC enhancement has not been completely exploited in the composite. One then points at the diamond/Al interface, which should provide good adhesion as well as maximal Interfacial Thermal Conductance (ITC) in order to facilitate thermal exchange across the interface. Our analytical modelling has recently predicted that introduction of a W interface nanolayer is one of the most efficient ways to achieve high ITC, which provides a practical guide for interface engineering [1]. Accordingly, a cost-effective sol-gel process has been tentatively used to deposit a W coating for diamond surface metallization. Compared with the diamond/Al counterpart without a W nanolayer, TC of the composite with a W nanolayer improved more than 20 % [2]. In this work, Scanning Transmission Electron Microscopy (STEM)/Energy-Dispersive X-ray spectroscopy (EDX) and Precession Electron Diffraction (PED) have been performed in order to investigate interface configurations of a W-coated diamond/Al composite. The aim is to study the effect of interface formation, reaction and diffusion on the ITC.