{'fraction_non_alphanumeric': 0.015078082929456112, 'fraction_numerical': 0.003769520732364028, 'mean_word_length': 5.152317880794702, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Laser mapping of the inter-strip response in double sided silicon strip detectors for particle identification

Silicon microstrips are widely used in nuclear physics experiments when high granularity and high resolution is required (e.g. particle-particle correlation). In addition microstrip detectors are used in the field of X-ray detection for position resolved X-ray spectroscopy. In the framework of the construction of a novel Femtoscope ARray for Correlation and Spectroscopy, named FARCOS, we are performing a thorough characterization of the silicon detector layers in terms of the efficiency and charge collection properties as a function of the point of incidence and type of interaction. We have experimental evidence—as previously observed also in the literature for other strip detectors—that inter-strip incidence alters the signal shape not only for the trivial charge division but also affecting the shape of the induced signal on neighbor strips. The phenomenon can be more or less pronounced depending on the energy and ion type but it is always present. In order to surgically probe the response of the inter-strip region we tested the detector both in back and in front injection with an infrared pulsed laser at two different wavelengths (705 nm and 904 nm). Depending on the side of interaction, on the position of incidence and on the absorption length, the shapes of the induced signals are significantly altered and signals of opposite polarity or bipolar signals arise. In order to get a complete picture of the physical phenomena at the basis of the aforementioned behavior we performed detailed 3D device simulations with a custom semi-analytical code and compared the results with the experimental data. The paper focuses on the description of the experimental measurements and their exhaustive description and interpretation.