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Self‐consistent method for quantifying indium content from X‐ray spectra of thick compound semiconductor specimens in a transmission electron microscope

Based on Monte Carlo simulations of X‐ray generation by fast electrons we calculate curves of effective sensitivity factors for analytical transmission electron microscopy based energy‐dispersive X‐ray spectroscopy including absorption and fluorescence effects, as a function of Ga K/L ratio for different indium and gallium containing compound semiconductors. For the case of InGaN alloy thin films we show that experimental spectra can thus be quantified without the need to measure specimen thickness or density, yielding self‐consistent values for quantification with Ga K and Ga L lines. The effect of uncertainties in the detector efficiency are also shown to be reduced.