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Monte Carlo analysis of fluctuations in submicron n+nn+ structures

By using the Monte Carlo method, submicron Si n+nn+ structures are analysed at different bias voltages and lengths of the n region. The autocorrelation function of current fluctuations and the variance of carrier number in different parts of the device is used to investigate the correlations induced by the self-consistent solution of the Boltzmann and Poisson equations and the influence of the modelling of the contacts.