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Properties of external-cavity high-power semiconductor lasers based on a single InGaAs quantum well at high pulsed current pump

Properties of light characteristics of external-cavity high-power semiconductor lasers with an active region based on a single InGaAs quantum well operating at ultrahigh pulsed currents are studied. A maximum peak power of 45 W at 110 A (from the aperture of 100 µm), a linewidth of 0.15 nm, and a wavelength in the range of 1040–1070 nm are demonstrated for an external-cavity laser. The tuning range narrows with an increase in the pump current from 27 nm at a current of 20 A to 23 nm at a current of 100 A. The maximum side-mode suppression ratio is up to 45 dB in the central region of the tuning range, while at the edges of this range it was no worse than 20 dB. It is determined that the tuning range of the laser spectrum is limited by the onset of an additional Fabry–Perot cavity line in the spectrum.