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A Large Active Area Be–Si MIS Solar Cell with Textured Surface

Be–Si MIS solar cell with a textured surface of 2 cm×2 cm has been developed. In basic investigations of Be–Si MIS cell, it was found that Be has a highly barrier height for p-type silicon and the cell efficiency using flat plated surface of silicon is 8.5% for a 1.1 cm2 active area cell. In the fabrication techniques, Be was deposited onto the textured surface of silicon for forming a Schottky barrier by electron beam source. In this case, Si wafers were placed in a vacuum system with the angle of incidence formed by the textured surface and the Be vapor stream. To prevent leakage at textured surface, the double layered front grid electrode consisting of barrier metal and alminium contact was accomplished. Typical cell having an active area of 3.62 cm2 exhibits Voc=0.51 V, Isc=27.6 mA/cm2, FF=0.52 and an AMI efficiency of 7.2%.