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Interface Reaction and Rate Enhancement of SiGe Thermal Oxidation

The oxidation of SiGe alloys has been investigated for both fundamental and technological reasons, as has Si oxidation. It has been expected as the fabrication process for the gate oxide of SiGe channel metal-oxide field-effect transistors (MOSFETs), which allows higher carrier mobility than that of Si channel MOSFETs. In recent years, it has also been employed in the fabrication of SiGe-on-insulator and Ge-on-insulator substrates. These substrates are employed to realize highspeed MOSFETs with channel materials of strained Si, SiGe, and Ge.