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Dielectronic recombination between hyperfine levels of the ground state of Bi82+

Dielectronic recombination cross sections between the hyperfine levels of the ground state of Bi 82+ are calculated in a hydrogenic approximation. The radiative decay rates from the doubly excited resonances 1s(F=5)n1 are found to be orders of magnitude stronger than the autoionizing decay rates to the 1s(F=4) continuum. The associated dielectronic recombination cross sections are strongly peaked towards zero energy, but their overall magnitudes are extremely small compared to the radiative recombination background