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Charge Storage Phenomena and I-V Characteristics Observed in Ultrathin Polyimide Langmuir-Blodgett Films

We fabricated Au/PI/Al junctions and then examined the charge storage phenomena in polyimide (PI) layers. We also examined the current-voltage (I-V) characteristics of the junctions in connection with charge storage phenomena. It was found that numerous excess charges were injected into PI multilayers from electrodes by the application of biasing voltages. Therefore, the space charge field formed in as-deposited PI layers was distorted by the excess charges injected. It was also found that asymmetric I-V characteristics observed for Au/PI/Al junctions depended on the biasing voltages, because the space charge field formed in PI layers influenced the I-V characteristics.