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Frequency domain simulation of conducted EMI in power electronic converters considering internal near field couplings by FEM

Power electronic components such as busbars, capacitors, and inductors are positioned close to each other when designing a high power density converter. Therefore, the internal near field couplings between these components should be considered when designing a low electromagnetic interference (EMI) converter. In this paper, we propose a new frequency domain model for simulation of EMI in power electronic converters. We focused on frequency domain simulation to assess the internal couplings by finite element method (FEM) full wave simulation without requiring a complicated equivalent circuit model. In order to simulate both the transient voltage noise (dv/dt noise) and transient current noise (di/dt noise), we used two noise source models (a voltage source noise model and a current source noise model). We compared the measured and simulated EMI to confirm the validity of our model, and found good agreement.