{'fraction_non_alphanumeric': 0.03070175438596491, 'fraction_numerical': 0.003289473684210526, 'mean_word_length': 5.568345323741007, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Highly stable fluorine-passivated In–Ga–Zn–O thin-film transistors under positive gate bias and temperature stress

A highly stable fluorine-passivated In–Ga–Zn–O (IGZO) thin-film transistor (TFT) was demonstrated under positive gate bias and temperature stress (PBTS). The defects in the IGZO TFT were passivated by fluorine, which was introduced into a SiOx etching stopper during the deposition of fluorinated silicon nitride for passivation and diffused during post-fabrication annealing. From the results of secondary ion mass spectrometry analysis, the reliability of the IGZO TFT under PBTS was observed to be markedly improved even at a stress temperature of 100 °C when fluorine diffusion was detected in the IGZO channel. The fluorine-passivated IGZO TFT has improved operation temperature and is advantageous for achieving high-performance and high-reliability oxide TFTs for next-generation displays.