{'fraction_non_alphanumeric': 0.024203821656050957, 'fraction_numerical': 0.0, 'mean_word_length': 5.390243902439025, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Ku-band MMIC power amplifier with on-chip compensation gate bias circuit

Recently, Ku-band PHEMT MMIC power amplifiers have been demonstrated for LMDS, point-to-point wireless communications systems and VSAT applications with high gain , low cost and single-supply characteristics. These MMICs operate without any compensation mechanism such and process and temperature variations. However, PHEMT MMICs are sensitive to the threshold voltage and temperature variations. The threshold voltage of the transistor determines the yield of a MMIC amplifier. And HEMT amplifiers are seriously affected by temperature variation. In this work, we propose compensation gate bias circuit for threshold voltage and temperature variations, and its application to the Ku- band MMIC power amplifier.