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A comparative study by TCAD simulation for two different n-in-p silicon particle detector structures

This paper presents a comparative study for two different n-in-p silicon particle detector structures in the purpose of evaluating the breakdown voltage of unirradiated devices candidate for high luminosity applications. The two structures based on the n-in-p technology with and without p-spray isolation between guard rings have been simulated on high resistivity silicon wafers. The simulated electrical characteristics current-voltage, for both structures, are compared for various parameters like, substrate thickness, substrate doping, guard ring depth, guard ring doping, oxide thickness, and oxide charge, under similar conditions. From the results of the simulation, we conclude that, in terms of leakage current, both structures behave similarly but in terms of breakdown voltage, n-in-p technology with p-spray shows better performances.