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Generation-recombination voltage noise spectrum in uniformly doped majority-carrier semiconductor samples

The formula for the voltage noise spectrum due to generation-recombination (G-R) rate fluctuations is derived for uniformly doped majority-carrier n-type semiconductor samples. In the derivation of the formula, the ohmic boundary condition is used to obtain physically sound results, correcting and extending the previously published formulas. It is shown that the G-R voltage noise spectrum becomes saturated in the high electric field region, which is the signature feature of the G-R noise. Furthermore, the electron density fluctuation is developed and calculated due to the delta-function population source. It is shown that as the electric field increases, the profile of the electron density fluctuation becomes quite asymmetric due to the strong drift velocity, and the peak value of the electron density fluctuation at the delta-function source location decreases, resulting in the saturation of the G-R noise voltage spectrum at high electric fields.The formula for the voltage noise spectrum due to generation-recombination (G-R) rate fluctuations is derived for uniformly doped majority-carrier n-type semiconductor samples. In the derivation of the formula, the ohmic boundary condition is used to obtain physically sound results, correcting and extending the previously published formulas. It is shown that the G-R voltage noise spectrum becomes saturated in the high electric field region, which is the signature feature of the G-R noise. Furthermore, the electron density fluctuation is developed and calculated due to the delta-function population source. It is shown that as the electric field increases, the profile of the electron density fluctuation becomes quite asymmetric due to the strong drift velocity, and the peak value of the electron density fluctuation at the delta-function source location decreases, resulting in the saturation of the G-R noise voltage spectrum at high electric fields.