{'fraction_non_alphanumeric': 0.030857142857142857, 'fraction_numerical': 0.024, 'mean_word_length': 5.125874125874126, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Defect characterization of InSb1−xNx grown using radio frequency nitrogen plasma-assisted molecular beam epitaxy

We report the growth of InSb1−xNx using radio frequency nitrogen plasma-assisted molecular beam epitaxy and its characterization using visible wavelength Raman scattering and x-ray diffraction. The effects of the growth temperature (330–420 °C) and the plasma power (200–500 W) on the N-induced defects were studied. Sb antisite defects from the A1gSb mode are shown to be dominant at a high growth temperature and a low plasma power. On the other hand, the high growth temperature and high plasma power induce the formation of interstitial Sb–N defects. A reduction in Sb related defects is observed at the lowest substrate temperature (330 °C) and plasma power (200 W). Based on the experimental results, a possible mechanism of defect formation is suggested.