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Detection of SiH2 radicals in an a-Si:H deposition plasma by laser-induced fluorescence

The feasibility of detecting the silylene radical SiH2 in a silane plasma directly by laser-induced fluorescence is demonstrated. Transitions in the (020-000) vibrational band were excited by a pulsed dye laser and the fluorescence was detected at the (010-000) band. In order to observe the fluorescence signal in the presence of scattered laser radiation and emission from the plasma, both wavelength-selective and fast gated detection were applied. The results suggest volume recombination to be the predominant loss mechanism.