{'fraction_non_alphanumeric': 0.025800711743772242, 'fraction_numerical': 0.0017793594306049821, 'mean_word_length': 5.181318681318682, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Design and demonstration of new operation mode multi-emitter resonant tunneling hot electron transistors for one-transistor-SRAM-cell and peripheral logic circuitry

We have designed and developed a new read/write operation mode one-transistor-SRAM-cell and its peripheral circuits using InGaAs multi-emitter resonant tunneling hot electron transistors (ME-RHETs). A new mode for write operation, based on the monostable-bistable transition of the resonant tunneling emitter and the bias-dependent current gain, is proposed to improve operating margins. To reduce the standby power consumption of a memory cell and increase current driving capability for peripheral circuits simultaneously, the ME-RHET structure is designed so as to use the first resonant state for the memory cell and the second resonant state for peripheral circuits. We have also designed a full set of SRAM components using the ME-RHETs, including cell array, decoder and a read/write circuit. We have succeeded in fabricating these circuits and demonstrated the correct read/write operation of the cell array combined with read/write circuits at 77 K.