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Modeling of threshold voltage for undoped surrounding gate MOSFET: A Gaussian approach

We have developed analytically a threshold voltage model and explored the threshold voltage roll-off and drain-induced barrier lowering (DIBL) effects for undoped surrounding-gate (SG) MOSFETs. The model is derived by applying the Gauss Law by considering an elemental area of the channel rather than using Poisson equation as implemented earlier. For this threshold voltage model, the threshold voltage roll-off and DIBL effects have been analyzed and compared with 3-D numerical simulation results for different channel lengths, channel thickness and oxide thickness and a very good agreement between them has been observed.