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Dielectric Properties of Nanocrystalline Barium Titanate Thin Films Deposited by RF Magnetron Sputtering

The nanocrystalline thin films of BaTiO3 have been deposited on the Pt/Ti/SiO2/Si substrates by RF magnetron sputtering at 500°C. The film deposited at 500°C has a thickness of 450.0 nm and is composed of granular crystallites of about 45.0 nm size. The crystallite size decreases with decreasing film thickness. The dielectric constant of the nanocrystalline BaTiO3 thin films increases with increasing film thickness. For the film thicknesses of 150.0 and 450.0 nm, the leakage current density is below 1.0×10-9 A/cm2 for the applied voltage of less than 5 V.