{'fraction_non_alphanumeric': 0.020689655172413793, 'fraction_numerical': 0.0017241379310344827, 'mean_word_length': 5.247311827956989, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Role of diffusion and parasitic effects on the frequency response of a Si-CMOS photodetector

In this paper, the frequency response of a VLSI compatible Si-CMOS p-i-n photodetector suitable for high-speed, lowvoltage operation is studied. The model is developed considering the effects of diffusion of carriers from the substrate region and the parasitic elements due to the presence of multiple diodes in lateral configuration. The current density is calculated considering square-area photodetector. Results indicate the possibility of optimum designs to maximize 3dB bandwidth.