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Ultrafast photoluminescence decay in low-temperature MOCVD-grown InxGa1-xAs

Time-resolved photoluminescence spectra of low-temperature MOCVD-grown layers of In0.16Ga0.84As and In0.47Ga0.53As have been measured with subpicosecond temporal resolution. The analysis of transients monitored at different photoluminescence energies allowed a separate estimation of both the electron and hole trapping times in these materials. For both layers the hole trapping times were about 34 ps, while the electron trapping times were equal to 18 and 60 ps for the layers of In0.16Ga0.84As and In0.47Ga0.53As respectively.