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Alloying effects in Ni Silicide for CMOS applications

The solid-state reaction of Ni/Si in the presence of other elements is investigated. The alloying effects on both NiSi/Si Schottky contacts and Ni fully silicided (FUSI) gates on SiO2 dielectric are studied by phase, composition, and electrical characterization tools. The results show that after silicidation Er, Y, and Al all segregated at the Ni-silicide surface rather than piled up at the Ni-silicide/Si interface due to their high affinity to oxygen, therefore little modulation of Schottky barrier height was observed. In contrast, Ho- and Er-alloyed Ni FUSI gates showed significant work function modulation, which could be related to the crystallinity change of the NiSi film in the presence of these elements.