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Ultra-shallow p+junction formed by photo-enhanced low-temperature epitaxy

Low-temperature Si epitaxy with heavy boron-doping using photo-enhanced processes was investigated. Under UV irradiation at 650 C a single crystal with a hole concentration of 1×1020cm-3was obtained. This epitaxial film had an abrupt impurity profile and high crystal quality. The UV irradiation enhanced the crystal growth and boron-doping in the low-temperature range. This technique enabled the fabrication of an ultra-shallow p+/n junction. This technique was applied to the base region of bipolar devices. A very thin, 65nm base with a carrier concentration of 1×1019cm-3was realized. These characteristics made with this technique are attractive for application to very high-speed bipolar devices.