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Chemical Interactions between Arsenic and Boron Implanted in Silicon during Annealing

Arsenic ions (As+) and boron ions (B+) were implanted into silicon (Si) at energies at which their respective projected ranges differed or coincided. Implanted As atoms reacted with implanted B atoms in a region where the population of implanted As atoms overlapped that of implanted B atoms. Such a complex as As2B was formed in the region.