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Waveguide device having delta doped active region

Embodiments of the invention include a laser structure having a delta doped active region for improved carrier confinement. The laser structure includes an n-type cladding layer, an n-type waveguide layer formed adjacent the n-type cladding layer, an active region formed adjacent the n-type waveguide layer, a p-type waveguide layer formed adjacent the active region, and a p-type cladding layer formed adjacent the p- type waveguide layer. The laser structure is configured so that a p-type dopant concentration increases across the active region from the n-type side of the active region to the p-type side of the active region and/or an n-type dopant concentration decreases across the active region from the n-type side of the active region to the p- type side of the active region. The delta doped active region provides improved carrier confinement, while eliminating the need for blocking layers, thereby reducing stress on the active region caused thereby.