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Method Using Optical Polarization for Achieving Low-Voltage-Driven Ferroelectric Memory Devices

We propose a method for achieving low-voltage driven ferroelectric memory devices. The method uses optical polarization measurements for detecting slight differences in the polarized state as the difference in the fast axis of birefringence For confirming the amount of memory effect as a function of the applied electric field, the hysteresis curve of the optical polarization property of lead lanthanum zirconate titanate (PLZT) was measured. The electric field required to align the directions of all electric polarizations of the sample (Emax) was 14 kV/cm. The azimuthal angle exhibited the memory effect of 5.4°at the electric field of 4.5 kV/cm. The result suggests that it is possible to utilize the memory effect with a driving electric field lesser than Emax by using the optical polarization property.