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New Semiconductor Alloy GaAs1-xBix Grown by Metal Organic Vapor Phase Epitaxy

A new semiconductor alloy material, GaAs1-xBix has been created by Metal Organic Vapor Phase Epitaxial (MOVPE) growth. A low growth temperature, such as 365°C, is required to obtain the alloy. X-ray diffraction measurements of alloy layers reveal that the diffraction patterns are satisfactory. The maximum GaBi content in the GaAsBi alloy estimated from the lattice constant is around 2%, which is consistent with that estimated from secondary ion mass spectroscopy (SIMS) measurements. In a photoluminescence (PL) measurement, a single peak spectrum is observed from 10 to 300 K. The temperature variation of the PL peak energy is as small as 0.1 meV/K.