{'fraction_non_alphanumeric': 0.01645123384253819, 'fraction_numerical': 0.0, 'mean_word_length': 5.454545454545454, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Novel Passivation Method in the Fabrication of Submicron InGaAsP/InP Ridge Waveguide Lasers

One challenge for the realization of electrically drive nano-photonic devices is the formation of metal contacts and passivation. In this paper, we report a novel self-aligned method suitable for the formation of the metal contact and passivation for submicron photonic devices. Two different dielectric materials with high selectivity in wet chemical etching and a wet etching of semiconductor to create an undercut are involved. The whole process is completely compatible with existing compound semiconductor process. As a demonstration of this method, the fabrication and characterization of an InGaAsP/InP submicron-ridge waveguide lasers is presented. The method is extendable to high aspect ratio-submicron ridge waveguide and other device fabrication.