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Characterization of Amorphous GaN Thin Films after Conventional Thermal Anneal

Fabrication of amorphous GaN thin film was performed using RF magnetron sputtering without any external temperature on silicon substrate. Thickness of deposited GaN film was approximately 200 nm. This work presents the surface morphology and roughness of amorphous GaN using FESEM and AFM analyses, respectively. The amorphous GaN had a pebble like structure with an average surface roughness of 1.34 nm. The effect of the post-annealing of the GaN thin films was also presented. The XRD result of the post annealing showed that the gallium nitride oxide present after annealing process was done at ambient condition with an average surface roughness of 1.48 nm.