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Impact of Compositional Nonuniformity in 
(In,Ga)N
-Based Light-Emitting Diodes

Compositional variation in (In,Ga)N alloys is a controversial topic, still debated in the literature for its influence on the performance of light-emitting diodes. This study accounts for the presence of nanometer-scale indium clustering in an LED, and describes its impact on the optical properties of the device. Clustering induces substantial redshift and broadening of the emission spectrum; furthermore, the temperature dependence of the radiative coefficient derived for the nonuniform structures is in good agreement with experiments that show a trend opposite that expected from standard theoretical considerations.