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High-Pressure Synthesis of a Gallium Oxonitride with a Spinel-Type Structure

The new compound Ga2.81O3.57N0.43 was crystallized under high-pressure / high-temperature conditions in a spinel-type structure from a prestructured gallium oxonitride ceramic, which was obtained from the single-source molecular precursor [Ga(OtBu)2NMe2]2 by thermal treatment in an ammonia atmosphere. The optimized precursor-derived gallium oxonitride ceramic remains nanocrystalline up to 600 °C and can be transformed at 7 GPa and 1100 °C into the crystalline phase Ga2.81O3.57N0.43. The structure, homogeneity, and nitrogen to oxygen ratio were determined using TEM coupled with an electron energy loss spectrometer (EELS) and an energy dispersive X-ray (EDX) spectrometer. For phase analysis and structure confirmation, X-ray powder diffraction data were measured.