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Fabrication of transparent conducting aluminum thin film via anodization-etching of thermally evaporated aluminum on glass

Transparent conductive aluminum (Al) thin films were prepared via resistive thermal evaporation method by direct anodization of Al on the glass. The anodic aluminum layer of the samples was then subjected to wet-etching. The effect of anodization time on the optical transmittance and sheet resistance of the transparent Al thin films was investigated. An increase in sheet resistance and optical transmittance of Al thin films with increasing anodization time was observed. Four-point probe measurements showed that the sample with the lowest sheet resistance (~12.5 Ω/square) was achieved at an anodization time of 10 s. However, it had the lowest transmittance of around 13.2 % at 550 nm wavelength of the incident light. By extending the anodization time to 60 s and above, the sheet resistance of the samples increased significantly, resulting in non-conductive thin films, while the transmittance reached a maximum value of ~62 % at 550 nm. This indicates the successful fabrication of transparent and conductive Al thin films for anodization times below 60 s.