{'fraction_non_alphanumeric': 0.027633851468048358, 'fraction_numerical': 0.015544041450777202, 'mean_word_length': 4.918367346938775, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
The Tri-Gate MOSFET: A New Vertical Power Transistor in 4H-SiC

The tri-gate MOSFET is a vertical power transistor with multiple sub-micron FinFET channels. The FinFET structure increases the current-carrying width of the MOS inversion layer without increasing the device area, thereby reducing the specific channel resistance. This is especially useful in silicon carbide where the inversion layer mobility is ~10× lower than in silicon. This innovation can reduce the on-resistance of SiC power MOSFETs at blocking voltages below 1,000 V where over 68% of the applications lie.