{'fraction_non_alphanumeric': 0.030109489051094892, 'fraction_numerical': 0.01916058394160584, 'mean_word_length': 5.813664596273292, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Bandwidth‐switchable cellular CMOS RF receiver front‐end for intra‐band carrier aggregation

A bandwidth‐switchable cellular complementary metal‐oxide‐semiconductor radio frequency receiver front‐end design employing a current‐reusing technique is presented in a 65‐nm RF CMOS technology. The proposed single‐ended receiver front‐end can fully support both narrowband and wideband multiple‐channel RF signals for up to three intraband carrier aggregations with high performance and low direct current consumption. To achieve different bandwidth‐handling capability, a narrowband‐ and a wideband‐switchable low noise amplifier is provided to realize appropriate matching conditions and transconductance, while maintaining high performance in multiple component carrier (CC) modes. The design operates at frequency bands of 700‐2700 MHz with 1.2 V. The design achieves conversion gains of more than 40 and 46 dB and noise figures (NFs) of less than 4.9 and 3.5 dB in wideband and narrowband modes, respectively. NF degradation in multiple CC modes is less than 0.5 dB for both bandwidth conditions.