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STRUCTURAL AND OPTICAL INVESTIGATION OF COBALT DOPED SnSb 2 S 4 THIN FILMS FOR PHOTOVOLTAIC APPLICATIONS

SnSb2S4 thin film was deposited on a soda lime glass substrate by thermal evaporation technique, under high vacuum of 10 -4 torr. The thin-film was further divided into three equal parts; two pieces out of them were dipped into cobalt nitrate solution (CoNO3) for 20 minutes at room temperature, while the remaining piece was kept as deposited. The Codoped samples were annealed in argon atmosphere for one hour at two different temperatures of 200oC and 300oC. The XRD pattern confirms the as-deposited thin film as amorphous. The crystallinity appeared after doping and further improved after annealing. The Optical properties including optical band gap, absorption coefficient, extinction coefficient, refractive index were investigated. Optical analysis shows that band gap decreases with cobalt doping and further decreases with annealing temperature. The resistivity decreases on the incorporation of cobalt content, which may be due to shift in Fermi level.