{'fraction_non_alphanumeric': 0.048554913294797684, 'fraction_numerical': 0.04393063583815029, 'mean_word_length': 3.582010582010582, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
25-45 GHz Wideband Mixer with Simultaneous RF- and LO-port Inductive Peaking Technique

In this paper, a novel CMOS mixer with is presented by utilizing simultaneous RF- and LO-port inductive peaking technique. By employing this technique, the conversion gain (CG) of the mixer can be enhanced under a wideband operation by combining the optimum gate and source inductive feedback. The mixer achieves a measured CG of -8.5 ~ -5.5 dB within a wide IF band from 0.5 to 12 GHz at a LO power (PLO) of 4 dBm and a LO frequency (fLO) of 30GHz. The proposed mixer also exhibits a ripple of 2dB from -7.9 to -5.9 dB in a wide RF band from 25 to 45GHz at a PLO of 4 dBm and an IF frequency (fIF) of 0.5 GHz. The measured LO-to-IF, LO-to-RF and RF-to-IF isolations are better than 42, 50 and 43dB, respectively. The chip is fabricated in a 90-nm CMOS with the area of 0.4 mm2