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DESIGN OF SI/SIGE HETEROJUNCTION LINE TUNNEL FIELD EFFECT TRANSISTOR (TFET) WITH HIGH-K DIELECTRIC

In this paper we propose a Si/SiGe heterojunction line tunnel field effect transistor (TFET) with high-K dielectric. The main objective of this device is to increase the ON current. In the case of Si TFETs the ON current is very low. It is because of poor band-to-band tunneling efficiency. This problem can be avoided using heterojunction materials, high-k gate insulators. The device is designed with the source material replaced by SiGe material. The device aims at providing high ON current without compromising the OFF current and sub threshold swing. In this work a heterojunction line tunnel FET is designed using TCAD and the various characteristics of the device are analysed. The device has high ON current of about 2.5mA/µm.