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Mobility enhancement and hysteresis phenomenon in WSe2 FETs

Two-dimensional materials are layered materials with outstanding electrical and optical properties in atomic thickness. Here we report on a back-gate transistor with a two-dimensional material WSe2 as channel material. Our device shows a significant mobility enhancement by Atomic layer deposition (ALD), from ~0.95 cm2/Vs to ~26 cm2/Vs. Moreover, we explored the hysteresis phenomenon in our device and fitted our data to make the mechanism clear.