{'fraction_non_alphanumeric': 0.02618657937806874, 'fraction_numerical': 0.0, 'mean_word_length': 4.828571428571428, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Znic Oxide Nanowires with Ultra-Thin and Low-Resistance Seed Layer

We report the zinc oxide (ZnO) nanowires with ultra-thin seed layer by low-cost hydrothermal method. The ultra-thin seed layer consists of ZnO thin film, which is fabricated by sol-gel method and then etched to reduce the thickness by diluted HCI. The resistance along the vertical direction of the ultra-thin seed layer on the indium tin oxide (ITO) glass decreases during the etching process. ZnO nanowires with low resistance in the vertical direction are expected to enable the application of optoelectronic device with better performance.