{'fraction_non_alphanumeric': 0.03742690058479532, 'fraction_numerical': 0.004678362573099415, 'mean_word_length': 5.070921985815603, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Photoconductivity of an InAs/GaAs self-assembled quantum dot photoconductive THz antenna

A broadband terahertz (THz) source is desirable for applications such as imaging, spectroscopy and security. Towards this, an InAs/GaAs quantum dot (QD) based photoconductive antenna (PCA) is a promising and compact solution for THz generation. Coherent THz radiation in the pulsed and the CW regime has been generated with a QD PCA under a resonant and off-resonant pumps [1, 2]. While photoconductivity of QD materials in mid- and far-IR at lower temperatures has been studied for cryogenic sensors and attributed to interlevel transitions, near-IE interband photoconductivity needs further investigation [3, 4]. In this work, we report on the photoconductive properties of an InAs/GaAs QD PCA pumped by a broadly-tunable InAs/GaAs QD external-cavity diode laser.