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High-Efficiency Charge Pumps with No Reversion Loss by Utilizing Gate Voltage Boosting Technique

This paper presents the high-efficiency charge pumps (CPs) that eliminate the reversion loss by using gate voltage boosting technique. First, a 6-phase bulk-CMOS CP with enhanced gate voltage is designed to reduce the reversion loss. Second, an all-NMOS CP is also demonstrated to improve the current driving capability and to break the limitation of the substrate diode breakdown voltage. The chip is designed with a 0.18-μm standard CMOS technology. As a result, the single-stage bulk-CMOS CP achieves a maximum output voltage and peak power efficiency of 6.595V and 84.2%, respectively. Moreover, the all-NMOS CP achieves ∼1.2× more output voltage than the bulk-CMOS CP at 1.5mA load current.