{'fraction_non_alphanumeric': 0.018617021276595744, 'fraction_numerical': 0.012411347517730497, 'mean_word_length': 5.2032967032967035, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Resist process optimization for a DUV laser pattern generator

For many years, laser pattern generation has been printing on i-line resists. As features sizes continue to shrink, laser pattern generation is moving to DUV laser wavelengths, and a production worthy resist process is needed. Characteristics such as standing waves, resist foot and CD drift under and after exposure have previously challenged efforts to migrate 248nm stepper chemically amplified resists (CARs) to mask making applications. In this study the performance of a commercially available 248nm laser/e-beam resist solution is examined in the Sigma7000 series laser pattern generators. To achieve virtually no resist foot as well as tight CD control the optimum process conditions for DUV laser applications were determined. Cross-sectional and top-down scanning electron microscopy analysis was performed to evaluate the resist and dry etch processes. A comparison is made with the resist DX1100P, used in initial stages for DUV pattern generators development. The new resist also benefits from being well established in mask making e-beam mask writers.