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Enhanced the Light Extraction Efficiency of an InGaN Light Emitting Diodes with an Embedded Rhombus-Like Air-Void Structure

InGaN light-emitting diodes (LED) were grown on a truncated-triangle-striped patterned sapphire substrate. After growing a GaN layer on the patterned-sapphire substrate, it was observed that a higher lateral growth process formed a V-shaped-striped air-void structure. After a bottom-up N-face wet etching process on a GaN layer, the stable crystallographic etching planes were formed as the GaN{1011} planes. Treated LED structures had 65% light enhancements and smaller divergent angles. A rhombus-like air-void structure formed at GaN/patterned-sapphire interface provided a high light extraction process and a wet etching channel for a chemical lift-off process application.