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Electrical Properties of p-Cu2O/CdS/n-Si Heterojunction

The conditions for the fabrication of anisotype heterostructures p-Cu2 O/CdS/n-Si by the method of RF magnetron sputtering of CdS and Cu2 O thin films onto n-Si crystalline substrates have been studied. The mechanisms of current transfer are analyzed by temperature dependences of I-V characteristics. The influence of light on the electrical properties of the p-Cu2 O/CdS/n-Si heterostructure is determined.