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Single-Event Upset Test of Static Random Access Memory Using Single-Ion Microprobe

A novel method for testing single-event immunity in VLSIs has been developed using a single-ion microprobe which is composed of an ion microprobe and a single-ion extractor. Testing of single-event upset has been performed in various sites of a 64 kbit static random access memory (SRAM) by hitting a micron-size device area with a single ion. Results of error address mapping agreed well with the hit sites. Through the experiment, no permanent radiation damage was introduced, which indicates the suitability of the current method for testing single-event immunity.