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Optimized Design Of Long-Wavelength Detectors For Integrated Photoreceivers

Metal-semiconductor-metal (MSM) and pin photodetectors have emerged over the past years as suitable options for large-bandwidth integrated receiver front-ends. In this paper we discuss the inherent bandwidth limitations set by practical constraints of size and quantum efficiency on InP/InGaAs based devices of both types under 1.3 and 1.55 pi m illumination. Large-bandwidth MSM detectors which use a strained GaAs layer between the InGaAs absorption layer and the Ti/Pt/Au contact fingers have been fabricated and tested. Their pulse response will be discussed in detail and compared with theoretical results.