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GaN HEMT compact model for circuit simulation

A surface potential based scalable compact model for GaN high electron-mobility transistors (HEMTs) is presented in this work. Based on the unified regional surface potential approach (URSP) which considers subthreshold, moderate- and strong-inversion regions, we have modeled the variation of Fermi level (Ef) with respect to gate voltage (Vg). GaN buffer doping has been considered for obtaining the subthreshold regional solution using classical charge-voltage equation. The moderate- and strong-inversion models are derived from the coupled Poisson-Schrodinger solutions. Model scalability is presented by incorporating short channel effects (SCEs) and is validated with TCAD as well as measurement data with good match.