{'fraction_non_alphanumeric': 0.038461538461538464, 'fraction_numerical': 0.0, 'mean_word_length': 5.198412698412699, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Planar sealed-channel gallium arsenide Schottky-barrier charge-coupled devices

We report the demonstration of GaAs Schottky-barrier buried-channel charge-coupled devices(SBCCD's) that are unique in three respectS. First, a planar configuration has been achieved by use of a Schottky-barrier channel stop. Secondly, a sealed channel has been provided by an overlapping gate structure achieved with two-level gate metal and dielectric isolation. Finally, charge transfer has been obtained with a two-layer GaAs structure, n-type over p-type, as well as with a single n-type layer on a Cr-doped substrate as employed for all previously reported GaAs SBCCD's. Characterization of charge-transfer behavior has emphasized comparative behavior of the single-and double-layer structures.