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Effect of growth condition of buffer layer for heteroepitaxial InSb films grown on Ge(111) substrate

We investigated the heteroepitaxial growth of InSb on Ge(111) substrate via buffer layer grown under In-rich or Sb-rich condition. We found that high-quality InSb films can be grown on Ge(111) substrate by two-step growth procedure, in which the 10nm-thick buffer layer is grown by using In rich growth condition at lower temperature (LT) and then the second layer is grown at -380 °C. The 500nm-thick InSb film showed InSb(111) peak with FWHM of about 110 arc second. This XRD phi-scan pattern only showed three intense peaks separated by intervals of 120 °, indicating the film does not include twins.