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Analysis of characteristics of films with TiOx-TiO2 structure

Ti was prepared on substrates by sputtering methods, then followed by an oxidization step to form TiOx. TiO2 films with dopents (In, Ta and Nb ions etc.) or without, could be directly coated on the surface by TiOx by a sol-gel process to obtain the films with TiOx-TiO2 structure. TiOx films in the oxidation process of Ti were calculated by diffusion equations and analyzed by x-ray diffraction. Crystalline phases, grain size and morphology of TiOx,-TiO2 cross section have been observed by transmission electronic microscopy and scanning electron microscopy, respectively. Raman spectra of the films with the dopants demonstrated existence of anatase phase even in nigher temperature. The electrical properties of the films were analyzed and compared with each other. The results have been explained by transferring theory of the excitons with the structure.