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Laser etching of InP in aqueous solutions

The etching of InP semiconductor stimulated by HeNe laser radiation was studied in both oxidizing and reducing environments. The etching proceeded via photochemical processes. It was proved that the etching rate is affected by the etchant concentration and by the laser light density. The effect of dopant on the etched depth was related to position of the dopant atom in the crystallographic lattice of the semiconductor.