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Reduction of Electron Decay Time Using Disordered Tunnel Barrier

The effects of ionized impurity in a tunnel barrier on electron tunneling are studied by performing time-resolved photoluminescence experiments using GaAs/AlGaAs asymmetric multiquantum wells (AMQWs) with a δ-doping layer. The photoluminescence decay time of two-dimensional electron gas in GaAs/AlGaAs AMQWs was measured and the results are compared with those of semiclassical Monte Carlo simulation.