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Impact of hydrogen diffusion on electrical characteristics of IGZO TFTs passivated by SiO2 or Al2O3

The degradation of electrical parameters of non-passivated IGZO TFTs is showed, which exhibited the indispensability of a passivation layer. After that, the electrical characteristics obtained by passivating TFTs by SiO2 (PECVD) or Al2O3 (ALD), is reported. Some results of SIMS and XPS analysis are presented to discuss the origins of passivated TFTs comportment, concretely, the diffusion of hydrogen into IGZO channel. We proposed finally some methods to eliminate this degradation.