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Fabrication of germanium-on-insulator (GOI) with improved threading dislocation density (TDD) via buffer-less epitaxy and bonding

The GOI substrate is fabricated through buffer-less epitaxy (the growth of Ge on Si), bonding and layer transfer. The misfit dislocations which are previously “buried” along the Ge/Si interface are now accessible from the top surface. Through TDD reduction method, the TDD is reduced by at least two orders of magnitude. Hence, a Ge epilayer with lower TDD can be realized and useful for subsequent III-V integration and device fabrication.