{'fraction_non_alphanumeric': 0.019742489270386267, 'fraction_numerical': 0.0, 'mean_word_length': 5.625, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
NEW RESULTS ON FATIGUE AND IMPRINT EFFECT

ABSTRACT A ferroelectric thin film capacitor is the key element in non-volatile ferroelectric Random Access Memories (FeRAM's). There are three important failure-mechanisms influencing the performance of these capacitors: fatigue, retention, and imprint. In this contribution the fatigue and imprint effect are investigated in detail. The material under investigation is lead zirconate titanate (PZT) which was deposited as ferroelectric thin film. Several fatigue measurements were performed with different cycling frequencies, different applied voltage amplitudes, and at varying hysteresis frequencies to investigate dependencies of these parameters on the fatigue effect. An equation is introduced in order to fit the measured behavior of polarization over time and to assign physical parameters to the numerical fitting values. This equation is used to fit the single fatigue curves and the obtained parameters are discussed. Finally, various imprint measurements were performed. Here, the imprint effect was investigated with respect to varying doping concentrations of Nd and Fe and to the initial hysteresis state.