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Two independent components modeling for Negative Bias Temperature Instability

Based on vast experimental dataset obtained from different technologies (pure or nitrided SiO2 and HK), we suggest that Negative Bias Temperature Instability is made of two independent components, presenting different voltage and temperature acceleration factors as well as process dependences. The recoverable part, subject to fast transient effects, is shown to obey field-assisted LRME hole trapping/detrapping processes. The permanent part is shown to be made of an equal number of interface traps and positive fixed charges, as resulting from hydrogen transfer to oxygen bridge. This hydrogen transfer was shown for the firs time to be reversible allowing in-depth analysis of the microscopic mechanisms at play.