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Initial oxidation of Si[001] induced by translational kinetic energy of O/sub 2/ supersonic molecula

The translational kinetic energy (Et) of O2, incident molecules can considerably affect the probability of dissociative adsorption and enhance surface chemical reactions. Supersonic molecular beams (SSMB ) is a fascinating method to control gas molecules with well-defined spatial distribution, particle flux and ( translational ) kinetic energies. The SSMB is also important technique for surface scientists to study adsorption energy barrier and sticking probabilities of incident particles on solid surfaqes. A great deal of experimental and theoretical work has been done to investigate kinetics and dynamics of O2, adsorption on Si(001) surface, however, little number of molecular beam work with greater than Et = 1.0eV of O2, on the initial oxidation of Si(001) has been published. We report the O2, sticking on Si(001) surface ( passive oxidation ) and the SiO desorption ( active oxidation ) induced by translational kinetic energies of O2, (up to 3.0 eV) using the SSMB.