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An accurate approach for analysing an inhomogeneous Schottky diode with a Gaussian distribution of barrier heights

An unexpected observation in the current–voltage curves of Schottky diodes, containing barrier inhomogeneities generated using the analytical results based on a Gaussian distribution model of barrier heights is reported. Calculations based on these results show that, at very low temperatures, Schottky diodes exhibit higher currents than at higher temperatures. This is an unusual observation, indicating a high current through the Schottky diodes at lower temperatures, which is inconsistent with the thermionic emission diffusion theory. The effects causing this unusual behaviour are explored by analysing a conventional model. A more accurate approach is presented which explains this unusual behaviour and yields results consistent with the theoretical behaviour of the Schottky diodes.