{'fraction_non_alphanumeric': 0.028695652173913042, 'fraction_numerical': 0.0034782608695652175, 'mean_word_length': 4.115555555555556, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Investigation of the physical properties of Fe/Si for use in a Cu/Fe/Si solar cells contact

One of the drawback of the copper metallization, i.e. Cu/Si, for solar cells is the tendency of the metal to diffuse into silicon. This can deteriorate the P/N junction. Thus, a diffusion barrier is necessary. Iron has been found to be a potential candidate to be used as a barrier between Cu and Si. Before the fabrication of the Cu/Fe/Si contact, it is useful to investigate the properties of the Fe/Si first and this is the objective of the present work. We have studied the variation of the electrical properties with the Fe thin film thickness t and the deposition rate. The resistivity ρ values range from 8 to 36 μΩ.cm. Interesting behaviors of the square resistance RL, ρ and the coefficient R are seen as a function of D/t, whereD is the grain size. Also, these nanometric Fe films are characterized by a uniform surface with a relatively low surface roughness, a small strain (less than 1% in magnitude) and a sharp interface with no interdiffusion between Fe and Si; these are also good qualities for Fe to be used as a barrier between Si and Cu.