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Investigations of Localized States in Hydrogenated Amorphous Silicon

A novel method is developed to investigate the localized states in the band gap of a-Si:H films by analyzing the photoluminescence spectra. A model of phonon emission process among localized states in long band tail is proposed to interpret the periodic oscillations in the sideband of photoluminescence spectra. For pure film samples of short band tail, thermalization of excited carriers in extended states gives a Gaussian-like photoluminescence spectrum. Rutherford backscattering spectrometry and d.c. conductivity measurement are also performed and analysis on these data conforms the above proposed model.