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Effects of P-N Junction Built-In Electric Field on Ir-Led Resistance under Gamma Rays Irradiation

It is known that the rate of introduction of radiation defects into the Schottky barrier of GaAs and InP diodes depends on the presence of the electric field. The main aim of this research is to study the influence of the built-in electric field at the p-n junction on the resistance of dual AlGaAs heterostructure IR-LEDs under gamma rays irradiation. It is determined that the rate of defects introduction in the presence of built-in electric field or reverse bias at p-n junction is considerably less than the rate of defects introduction into the neutral region without electric field. Then the possible ways of improving the radiation resistance of infrared LEDs are considered.