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Testing of CMOS devices in NIF's harsh neutron environment

Vendor supplied CMOS sensors were exposed to 14 MeV neutrons on yield shots in NIF and examined for damage. The sensors were exposed to multiple shots with a maximum fluence on one of the sensors of 4.3E11 n/cm2. The results of post-shot testing will be presented. LLNL is investigating the suitability of CMOS imaging sensors for use in the camera of the ARIANE diagnostic which will mitigate the effects of the NIF neutron environment by dumping photoelectrons during the neutron pulse and then recording an image stored on a long persistence phosphor.