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Characterization of vapor-phase photopolymerized MMA

Recently photochemical vapor depositions have attracted attentions as the formation method of thin films at low temperature with small amount of impurity and irradiation damage. In studies of photochemical vapor deposition, the thin film formation of inorganic substances, such as silicon dioxide (SiO2), silicon nitride (Si3N4), amorphous silicon and various kinds of metals have been reported(1)∼(5). Mercury lamp and ultraviolet laser are used as the light source which causes the photochemical reactions. This method utilizes the vapor-phase reactions and is different from the conventional method depending on solid- or liquid-phase reactions. This method is being expected to apply to the manufacturing process of microelectronic devices such as semiconductors, instead of plasma chemical vapor deposition.