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Blueshifting of Ion-Implanted InGaAs/InGaAsP Multiple Quantum Well Structures Using Two-Step Rapid Temperature Annealing Process

Investigation of implantation-enhanced quantum-well intermixing has been described in a lattice-matched InGaAs/InGaAsP multiple quantum well p–i–n heterostructure. Samples are implanted with a dose of 5 ×1014 P+ ions/cm2 at high energy of 1 MeV. The band gaps in the samples are determined from photoluminescence at room temperature. The rapid thermal annealing (RTA) process is carried out from 675 to 875 °C in intervals 50 °C for 9 min and then the blue-shift of the band gap at 675 °C is as large as 107 nm. However, it is improved to 140 nm when a novel two-step annealing process is conducted at 675 °C (9 min) and 875 °C (1 min) in sequence.