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Pressure-induced depopulation of the first excited subband in GaInAs/InP heterojunctions

The authors present recent experimental results where the evidence for the total depopulation of the first excited electric subband with pressure is demonstrated. The total electron concentration decreases at a rate of 2.7% kbar-1, much higher than in previous experiments. The experimental situation can be fitted with the triangular-well approximation if they both assume the change with pressure of the conduction band discontinuity Delta Ec and the deepening of a deep impurity level with activation energy of the order 160 meV at zero pressure.