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Shallow Donor Impurities in Quantum Well Wires/Effects of Image Potential

We calculate the shallow donor impurity binding energies including image potential in quasi-one-dimensional GaAs/AIAs quantum well wires with rectangular cross section using the variational approach. The results we have obtained show that when impurity ion image potential is considered the variations of binding energy are remarkable, and when the image potentials of impurity ion and electron are considered simultaneously the corresponding variations of binding energy are small. The results also show that the image potential is important, especially when the cross section dimensions of quantum wires become small.