{'fraction_non_alphanumeric': 0.02365930599369085, 'fraction_numerical': 0.0, 'mean_word_length': 5.75531914893617, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
On the solid-phase epitaxy of the a-Si:B/c-Si interface

By means of large-scale atomistic simulations we investigate the recrystallization features of an interface between boron-doped amorphous silicon and crystalline silicon. Present simulations are both consistent with available experimental information and predictive as far as the relevant elementary mechanisms occurring during solid-phase epitaxy. In particular, we prove that the experimentally observed solubility limit for electrically active boron is due to sizeable boron ripening phenomena, occurring in the amorphous-silicon region, as well as during recrystallization.