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Absorption and laser damage threshold studies of ion-assisted pulsed-laser-deposited oxide films

The laterally resolved absorption and the laser damage thresholds at 1.06 micrometers wavelength of yttria and hafnia films prepared by pulsed laser deposition with oxygen ion bombardment of the growing films were investigated. Depending on the laser and ion beam parameters films with low average absorption can be prepared by that method. Consequently, high predominantly intrinsic absorption induced laser damage thresholds D1 comparable with those of continuously evaporated films can be prepared. The more defect induced laser damage thresholds D0, however, are largely determined by a certain number of micron- sized particulates embedded inside the films. Their number can be reduced by optimizing the laser pulse power density and the laser beam cross-section on the target, while their influence on laser damage thresholds can be reduced by increasing the ratio of oxygen ion bombardment to growth rate.