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Photoluminescence, intersubband absorption, and double crystal x-ray diffraction in p-doped InGaAs/AlGaAs strained multiple quantum wells

We report the correlation of photoluminescence (PL), infrared intersubband absorption, and double crystal x‐ray diffraction (DCXRD) data for a p‐doped InGaAs/AlGaAs strained multi‐ ple‐quantum‐well structure grown by molecular beam epitaxy. A PL doublet at 1.476 and 1.563 eV involves two confined holes states and their 87 meV separation is in good agreement with the measured intersubband absorption of about 14.5 μm (85 meV). Furthermore, when the well width obtained from DCXRD measurement is included excellent agreement with an envelope function calculation is found for the energy levels determined by PL and intersubband absorption energy.