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Densification Kinetics and Electrical Properties of Buried Resistors in Low-Temperature Cofired Ceramics

The densification kinetics and electrical properties of buried resistors in low-temperature cofired ceramics (LTCCs) have been investigated. Activation energy analysis shows that the calculated activation energies, 254–301 kJ/mol, are close to that of the viscous flow of PbO–SiO2–Al2O3 glass, 246 kJ/mol, suggesting that the predominant mechanism of densification is the viscous flow of glass due to either melt formation or glass redistribution. From microstructural observations, it is further identified that glass redistribution is the rate-limiting step on the basis of the densification mechanism in the glass-ruthenium oxide system. Decreases in resistance and increases in the temperature coefficient of resistance (TCR) with increasing sintering temperature and time were observed. This result is attributed to the porosity and pore size on the basis of the analysis using the glass redistribution equation and microstructural observations. With higher porosity or smaller pore size, the probability of electron conduction is therefore decreased, resulting in a higher electrical resistance and a lower high-temperature coefficients of resistance (HTCR).