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Well controlled assembly of silicon nanowires by nanowire transfer method

Efforts to date in silicon nanowire research have primarily focused on the nanowire synthesis and the demonstration of individual nanowire-based devices exhibiting interdisciplinary potential spanned from electrical (Duan et al 2003 Nature 425 274–8; Cui and Lieber 2001 Science 291 851–3; Morales and Lieber 1998 Science 279 208–11) through biomedical applications (Cui et al 2003 Science 293 1289–92; Zheng et al 2005 Nature Biotechnol. 23 1294–301). However, the realization of integrated nanowire devices requires well ordered assembly of a silicon nanowire (Huang et al 2001 Science 291 630–3; Whang et al 2003 Nano Lett. 3 1255–9) as well as simple and cost effective fabrication. Here we describe a simple fabrication scheme and a large-scale assembly of silicon nanowires by combining top-down fabrication with nanowire transfer onto another insulator substrate for device manufacture. Our innovative fabrication method enables us to obtain well defined silicon nanowires as a freestanding bridge structure with a diameter of 20–200 nm and a length varying from 5 to 100 µm using micro-machining processes. Direct transfer of the freestanding nanowires simply provides large-scale assembly of silicon nanowire on various substrates for highly integrated devices such as high-performance thin-film transistors (TFTs) (Duan et al 2003 Nature 425 274–8; Ishihara et al 2003 Thin Solid Films 427 77–85) and nanowire-based electronics (Cui and Lieber 2001 Science 291 851–3). Electrical transport properties of the transferred silicon nanowire were also investigated.